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2022
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Invention
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Power semiconductor module. There is provide a power semiconductor module (100) comprising: a fir... |
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Invention
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Power semiconductor module. There is provided a power semiconductor module 1, comprising: a power... |
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Invention
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A pin for semiconductor packaging. A pin (200) for use in power semiconductor packaging, the pin ... |
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Invention
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Flexible pin. A pin (200) for use in power semiconductor packaging, the pin comprising: a head (2... |
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Invention
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Power semiconductor module. There is provide a power semiconductor module comprising: a substrate... |
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Invention
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Power semiconductor module. There is provided a power semiconductor module, comprising: a switchi... |
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Invention
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A design for enhancing the long term reliability of a large joining area in a power semiconductor... |
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Invention
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High power density flip chip semiconductor packaging. Semiconductor packaging designs and methods... |
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Invention
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Semiconductor device. A semiconductor device having an outermost passivation stack configured to ... |
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Invention
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A thermal management device for power semiconductor packaging. A thermal management device such a... |
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2021
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Invention
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Semiconductor device assembly, crimping power semiconductor module, and manufacturing method. The... |
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Invention
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Power sub-module and manufacturing method therefor, and transfer-molded crimping-type power modul... |
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Invention
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Cellular structure of silicon carbide device, method for preparation thereof, and silicon carbide... |
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Invention
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Semiconductor device.
A semiconductor device comprising: a plurality of semiconductor chips; a f... |
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Invention
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Press-pack semiconductor device package. There is provided a semiconductor device (1), comprising... |
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Invention
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Semiconductor device.
We herein describe a power semiconductor device having a semiconductor sub... |
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Invention
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Semiconductor device. We herein describe a power semiconductor device having a semiconductor subs... |
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Invention
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Igbt device.
We herein describe a gate controlled semiconductor device having a plurality of gat... |
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Invention
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Igbt device with trench gate bus. We herein describe a gate controlled semiconductor device, in p... |
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Invention
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Semiconductor device with failure-protection structure. There is provided a semiconductor device ... |
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Invention
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Reverse-conducting igbt chip.
Provided is a reverse-conducting IGBT chip including a first condu... |
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Invention
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Reverse-conducting igbt chip. Provided is a reverse-conducting IGBT chip, comprising a first cond... |
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Invention
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Reverse conducting igbt power integration module. Provided is a reverse conducting IGBT power int... |
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Invention
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Cellular structure of silicon carbide device, preparation method for cellular structure of silico... |
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Invention
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Semiconductor device.
There is provided a semiconductor device 1, comprising: a housing comprisi... |
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Invention
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Semiconductor device.
There is provided a semiconductor device 1 which comprises: a housing comp... |
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Invention
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Semiconductor device.
The present disclosure provides a semiconductor device 1, comprising: a ho... |
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Invention
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Semiconductor device having failure mode protection. The present disclosure provides a semiconduc... |
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Invention
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Power semiconductor device with current bypass mechanism. There is provided a semiconductor devic... |
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Invention
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Power semiconductor device with thermal coupler. There is provided a semiconductor device (1), co... |
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Invention
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Semiconductor device. There is provided a semiconductor device (1), comprising: a housing compris... |
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Invention
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Semiconductor device. There is provided a semiconductor device (1,) comprising: a housing compris... |
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Invention
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Semiconductor device.
There is provided a semiconductor device 100, comprising: at least one sem... |
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Invention
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Semiconductor device. There is provided a semiconductor device 100, comprising: at least one semi... |
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Invention
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Power semiconductor device.
There is provided a power semiconductor device 1, comprising: a semi... |
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2020
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Invention
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High power density 3d semiconductor module packaging. We herein describe a semiconductor device s... |
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Invention
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Igbt with a variation of trench oxide thickness regions.
We describe herein a gate controlled bi... |
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Invention
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Method of forming asymmetric thickness oxide trenches.
We herein describe a method of manufactur... |
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Invention
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Reverse conducting igbt with controlled anode injection. We herein describe a semiconductor devic... |
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Invention
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Sic mosfet structures with asymmetric trench oxide.
We herein describe a silicon-carbide (SiC) b... |
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Invention
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Sic mosfet with asymmetric trench oxide and method of manufacture. We herein describe a silicon-c... |
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Invention
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Igbt with a variation of trench oxide thickness regions. We describe herein a gate controlled bip... |
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Invention
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Method of forming asymmetric thickness oxide trenches. We herein describe a method of manufacturi... |
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Invention
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Cell structure of silicon carbide mosfet device, and power semiconductor device. A cell structure... |
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2019
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Invention
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Silicon carbide mosfet device and cell structure thereof.
A cell structure of a silicon carbide ... |
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Invention
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Cellular structure of silicon carbide mosfet device, and silicon carbide mosfet device.
Disclose... |
