- All sections
- C - Chemistrymetallurgy
- C30B - Single-crystal growthunidirectional solidification of eutectic material or unidirectional demixing of eutectoid materialrefining by zone-melting of materialproduction of a homogeneous polycrystalline material with defined structuresingle crystals or homogeneous polycrystalline material with defined structureafter-treatment of single crystals or a homogeneous polycrystalline material with defined structureapparatus therefor
- C30B 11/06 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
Patent holdings for IPC class C30B 11/06
Total number of patents in this class: 30
10-year publication summary
|
3
|
1
|
0
|
1
|
0
|
0
|
2
|
5
|
2
|
1
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| The 13th Research Institute of China Electronics Technology Group Corporation | 135 |
7 |
| Sumitomo Electric Industries, Ltd. | 16467 |
4 |
| Fisk University | 18 |
3 |
| Consolidated Nuclear Security, LLC | 116 |
2 |
| REC Solar Norway AS | 10 |
2 |
| CapeSym, Inc. | 10 |
1 |
| Globalwafers Co., Ltd. | 734 |
1 |
| JX Nippon Mining & Metals Corporation | 1450 |
1 |
| Nihon Kessho Kogaku Co., Ltd. | 19 |
1 |
| Rensselaer Polytechnic Institute | 857 |
1 |
| Sumco Corporation | 1108 |
1 |
| University of Tennessee Research Foundation | 770 |
1 |
| U.S. Borax Inc. | 121 |
1 |
| GE Infrastructure Technology, LLC | 6144 |
1 |
| Consolidates Nuclear Security, LLC | 1 |
1 |
| Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | 6100 |
1 |
| Hangzhou Garen Semiconductor Co., Ltd. | 2 |
1 |
| Other owners | 0 |