- All sections
- C - Chemistrymetallurgy
- C30B - Single-crystal growthunidirectional solidification of eutectic material or unidirectional demixing of eutectoid materialrefining by zone-melting of materialproduction of a homogeneous polycrystalline material with defined structuresingle crystals or homogeneous polycrystalline material with defined structureafter-treatment of single crystals or a homogeneous polycrystalline material with defined structureapparatus therefor
- C30B 23/02 - Epitaxial-layer growth
Patent holdings for IPC class C30B 23/02
Total number of patents in this class: 822
10-year publication summary
|
63
|
41
|
64
|
48
|
75
|
84
|
68
|
51
|
59
|
49
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Resonac Corporation | 3781 |
38 |
| Denso Corporation | 25909 |
30 |
| Crystal IS, Inc. | 121 |
21 |
| SiCrystal GmbH | 50 |
21 |
| Wolfspeed, Inc. | 923 |
20 |
| Sumitomo Electric Industries, Ltd. | 16419 |
16 |
| Toyota Tsusho Corporation | 194 |
16 |
| Kwansei Gakuin Educational Foundation | 227 |
14 |
| Soitec | 1137 |
13 |
| ein Crystal Co., Ltd. | 28 |
13 |
| NGK Insulators, Ltd. | 5169 |
12 |
| Kiselkarbid I Stockholm AB | 16 |
12 |
| Applied Materials, Inc. | 20654 |
11 |
| The Regents of the University of Michigan | 5081 |
11 |
| Mitsubishi Chemical Corporation | 4777 |
11 |
| Zadient Technologies SAS | 40 |
11 |
| Commissariat à l'énergie atomique et aux energies alternatives | 11137 |
8 |
| Globalwafers Co., Ltd. | 734 |
8 |
| GTAT Corporation | 111 |
8 |
| Pallidus, Inc. | 39 |
8 |
| Other owners | 520 |