- All sections
- C - Chemistrymetallurgy
- C30B - Single-crystal growthunidirectional solidification of eutectic material or unidirectional demixing of eutectoid materialrefining by zone-melting of materialproduction of a homogeneous polycrystalline material with defined structuresingle crystals or homogeneous polycrystalline material with defined structureafter-treatment of single crystals or a homogeneous polycrystalline material with defined structureapparatus therefor
- C30B 23/02 - Epitaxial-layer growth
Patent holdings for IPC class C30B 23/02
Total number of patents in this class: 815
10-year publication summary
|
63
|
41
|
64
|
48
|
75
|
84
|
68
|
51
|
59
|
38
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Resonac Corporation | 3530 |
37 |
| Sumitomo Electric Industries, Ltd. | 16331 |
29 |
| Crystal IS, Inc. | 121 |
21 |
| SiCrystal GmbH | 47 |
20 |
| Wolfspeed, Inc. | 902 |
19 |
| Denso Corporation | 25534 |
16 |
| Toyota Tsusho Corporation | 190 |
16 |
| Kwansei Gakuin Educational Foundation | 225 |
14 |
| Soitec | 1101 |
13 |
| ein Crystal Co., Ltd. | 28 |
13 |
| NGK Insulators, Ltd. | 5236 |
12 |
| Kiselkarbid I Stockholm AB | 16 |
12 |
| Applied Materials, Inc. | 20375 |
11 |
| Mitsubishi Chemical Corporation | 4724 |
11 |
| Zadient Technologies SAS | 38 |
11 |
| The Regents of the University of Michigan | 4985 |
10 |
| Commissariat à l'énergie atomique et aux energies alternatives | 11123 |
8 |
| Globalwafers Co., Ltd. | 730 |
8 |
| GTAT Corporation | 111 |
8 |
| II-VI Advanced Materials, LLC | 50 |
8 |
| Other owners | 518 |