- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 21/385 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
Patent holdings for IPC class H01L 21/385
Total number of patents in this class: 100
10-year publication summary
6
|
14
|
15
|
14
|
9
|
9
|
8
|
5
|
6
|
1
|
2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Semiconductor Energy Laboratory Co., Ltd. | 11377 |
29 |
Japan Display Inc. | 6910 |
6 |
Samsung Display Co., Ltd. | 34539 |
5 |
LG Display Co., Ltd. | 13397 |
4 |
International Business Machines Corporation | 61207 |
3 |
Denso Corporation | 24230 |
3 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 42461 |
3 |
Boe Technology Group Co., Ltd. | 40912 |
3 |
Japan Advanced Institute of Science and Technology | 128 |
3 |
Sumitomo Seika Chemicals Co., Ltd. | 1038 |
3 |
Toyota Motor Corporation | 31819 |
2 |
Micron Technology, Inc. | 26231 |
2 |
Infineon Technologies Austria AG | 2143 |
2 |
Shenzhen China Star Optoelectronics Technology Co., Ltd. | 8478 |
2 |
National Taiwan University | 1218 |
2 |
Ascent Solar Technologies, Inc. | 36 |
2 |
e Ink Holdings Inc. | 635 |
2 |
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | 3713 |
2 |
JDI Design and Development G.K. | 1196 |
2 |
Honeywell International Inc. | 13525 |
1 |
Other owners | 19 |