• All sections
  • H - Electricity
  • H01L - Semiconductor devices not covered by class
  • H01L 27/1158 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels

Patent holdings for IPC class H01L 27/1158

Total number of patents in this class: 68

10-year publication summary

11
9
11
14
16
5
3
0
0
0
2017 2018 2019 2020 2021 2022 2023 2024 2025 2026

Principal owners for this class

Owner
All patents
This class
Kioxia Corporation
10724
12
Micron Technology, Inc.
27370
10
SK Hynix Inc.
12237
8
Sandisk Technologies LLC
1426
8
Samsung Electronics Co., Ltd.
154987
7
Taiwan Semiconductor Manufacturing Company, Ltd.
47675
5
Sandisk Technologies Inc.
5398
5
Yangtze Memory Technologies Co., Ltd.
3211
5
Renesas Electronics Corporation
5862
2
Macronix International Co., Ltd.
2513
2
United Microelectronics Corp.
4459
1
IMEC VZW
1760
1
Toshiba Memory Corporation
236
1
Intel NDTM US LLC
456
1
Other owners 0