- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/1158 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
Patent holdings for IPC class H01L 27/1158
Total number of patents in this class: 68
10-year publication summary
|
11
|
9
|
11
|
14
|
16
|
5
|
3
|
0
|
0
|
0
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Kioxia Corporation | 10724 |
12 |
| Micron Technology, Inc. | 27370 |
10 |
| SK Hynix Inc. | 12237 |
8 |
| Sandisk Technologies LLC | 1426 |
8 |
| Samsung Electronics Co., Ltd. | 154987 |
7 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 47675 |
5 |
| Sandisk Technologies Inc. | 5398 |
5 |
| Yangtze Memory Technologies Co., Ltd. | 3211 |
5 |
| Renesas Electronics Corporation | 5862 |
2 |
| Macronix International Co., Ltd. | 2513 |
2 |
| United Microelectronics Corp. | 4459 |
1 |
| IMEC VZW | 1760 |
1 |
| Toshiba Memory Corporation | 236 |
1 |
| Intel NDTM US LLC | 456 |
1 |
| Other owners | 0 |