• All sections
  • H - Electricity
  • H01L - Semiconductor devices not covered by class
  • H01L 27/1158 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels

Patent holdings for IPC class H01L 27/1158

Total number of patents in this class: 70

10-year publication summary

4
11
9
11
14
16
5
5
0
0
2016 2017 2018 2019 2020 2021 2022 2023 2024 2025

Principal owners for this class

Owner
All patents
This class
Kioxia Corporation
10174
13
Micron Technology, Inc.
25961
10
SK Hynix Inc.
10930
8
Sandisk Technologies LLC
1454
8
Samsung Electronics Co., Ltd.
140622
7
Taiwan Semiconductor Manufacturing Company, Ltd.
41068
5
Sandisk Technologies Inc.
4918
5
Yangtze Memory Technologies Co., Ltd.
2417
5
Renesas Electronics Corporation
6144
2
Macronix International Co., Ltd.
2551
2
United Microelectronics Corp.
4152
1
IMEC VZW
1543
1
Toshiba Memory Corporation
237
1
GLOBALFOUNDRIES Singapore Pte. Ltd.
777
1
Intel NDTM US LLC
424
1
Other owners 0