- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/1158 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
Patent holdings for IPC class H01L 27/1158
Total number of patents in this class: 70
10-year publication summary
4
|
11
|
9
|
11
|
14
|
16
|
5
|
5
|
0
|
0
|
2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Kioxia Corporation | 10174 |
13 |
Micron Technology, Inc. | 25961 |
10 |
SK Hynix Inc. | 10930 |
8 |
Sandisk Technologies LLC | 1454 |
8 |
Samsung Electronics Co., Ltd. | 140622 |
7 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 41068 |
5 |
Sandisk Technologies Inc. | 4918 |
5 |
Yangtze Memory Technologies Co., Ltd. | 2417 |
5 |
Renesas Electronics Corporation | 6144 |
2 |
Macronix International Co., Ltd. | 2551 |
2 |
United Microelectronics Corp. | 4152 |
1 |
IMEC VZW | 1543 |
1 |
Toshiba Memory Corporation | 237 |
1 |
GLOBALFOUNDRIES Singapore Pte. Ltd. | 777 |
1 |
Intel NDTM US LLC | 424 |
1 |
Other owners | 0 |