- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/50 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the boundary region between the core and peripheral circuit regions
Patent holdings for IPC class H10B 51/50
Total number of patents in this class: 21
10-year publication summary
|
0
|
0
|
0
|
0
|
0
|
0
|
7
|
3
|
8
|
3
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 41489 |
10 |
| Sandisk Technologies Inc. | 4810 |
4 |
| Micron Technology, Inc. | 26067 |
2 |
| Yangtze Memory Technologies Co., Ltd. | 2496 |
2 |
| Sandisk Technologies LLC | 1452 |
1 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1318 |
1 |
| Xiangtan University | 57 |
1 |
| Other owners | 0 |