- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/50 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the boundary region between the core and peripheral circuit regions
Patent holdings for IPC class H10B 51/50
Total number of patents in this class: 30
10-year publication summary
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0
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0
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0
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0
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1
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7
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4
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8
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8
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1
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| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 46813 |
12 |
| Sandisk Technologies Inc. | 5307 |
6 |
| Samsung Electronics Co., Ltd. | 152304 |
3 |
| Micron Technology, Inc. | 27221 |
2 |
| Yangtze Memory Technologies Co., Ltd. | 3083 |
2 |
| Sandisk Technologies LLC | 1453 |
1 |
| Industry-university Cooperation Foundation Hanyang University Erica Campus | 621 |
1 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1510 |
1 |
| Xiangtan University | 60 |
1 |
| MAEKURA, Takayuki | 1 |
1 |
| Other owners | 0 |