- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/87 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of PN-junction gate FETs
Patent holdings for IPC class H10D 84/87
Total number of patents in this class: 3
10-year publication summary
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0
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0
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0
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0
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0
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0
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1
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1
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0
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| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| MACOM Technology Solutions Holdings, Inc. | 851 |
1 |
| Hon Young Semiconductor Corporation | 32 |
1 |
| Hai Precision Industry Co., Ltd. | 1 |
1 |
| Other owners | 0 |