Param Corporation

Japan

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IPC Class
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching 4
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or 4
H01J 37/06 - Electron sourcesElectron guns 3
H01J 1/05 - Liquid electrodes, e.g. liquid cathode characterised by material 2
H01J 37/065 - Construction of guns or parts thereof 2
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Found results for  patents

1.

Electron gun device

      
Application Number 17434833
Grant Number 11295925
Status In Force
Filing Date 2020-07-13
First Publication Date 2022-02-17
Grant Date 2022-04-05
Owner Param Corporation (Japan)
Inventor
  • Yasuda, Hiroshi
  • Ooae, Yoshihisa
  • Shibaoka, Tatsuya
  • Murata, Hidekazu

Abstract

An electron gun device according to the present invention emits an electron beam by means of heating to a high temperature in a vacuum. According to the present invention, the surface of a material (108, 125), which emits an electron beam, is a hydrogenated metal that is melted and in a liquid state during a high-temperature operation; the liquid hydrogenated metal is contained in a hollow cover tube container (102, 124), which is in a solid state during the high-temperature operation, in the form of a hydrogenated liquid metal or in the form of a liquid metal before hydrogenation, and heated together with the cover tube container (102, 124) to a high temperature; subsequently, the hydrogenated liquid metal is exposed from the cover tube container (102, 124) and forms a liquid surface where gravity, the electric field and the surface tension of the liquid surface are balanced; and an electron beam is emitted from the exposed surface of the hydrogenated liquid metal.

IPC Classes  ?

  • H01J 37/073 - Electron guns using field emission, photo emission, or secondary emission electron sources
  • H01J 37/065 - Construction of guns or parts thereof
  • H01J 1/05 - Liquid electrodes, e.g. liquid cathode characterised by material
  • H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching

2.

ELECTRON GUN DEVICE

      
Application Number JP2020027255
Publication Number 2021/015039
Status In Force
Filing Date 2020-07-13
Publication Date 2021-01-28
Owner PARAM CORPORATION (Japan)
Inventor
  • Yasuda Hiroshi
  • Ooae Yoshihisa
  • Shibaoka Tatsuya
  • Murata Hidekazu

Abstract

An electron gun device according to the present invention emits an electron beam by means of heating to a high temperature in a vacuum. According to the present invention, the surface of a material (108, 125), which emits an electron beam, is a hydrogenated metal that is melted and in a liquid state during a high-temperature operation; the liquid hydrogenated metal is contained in a hollow cover tube container (102, 124), which is in a solid state during the high-temperature operation, in the form of a hydrogenated liquid metal or in the form of a liquid metal before hydrogenation, and heated together with the cover tube container (102, 124) to a high temperature; subsequently, the hydrogenated liquid metal is exposed from the cover tube container (102, 124) and forms a liquid surface where the gravity, the electric field and the surface tension of the liquid surface are balanced; and an electron beam is emitted from the exposed surface of the hydrogenated liquid metal.

IPC Classes  ?

  • H01J 37/06 - Electron sourcesElectron guns
  • H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
  • H01J 1/05 - Liquid electrodes, e.g. liquid cathode characterised by material
  • H01J 1/06 - Containers for liquid-pool electrodesArrangement or mounting thereof
  • H01J 1/10 - Cooling, heating, circulating, filtering, or controlling level of liquid in a liquid-pool electrode

3.

ELECTRON GUN

      
Application Number JP2019011053
Publication Number 2019/181820
Status In Force
Filing Date 2019-03-18
Publication Date 2019-09-26
Owner PARAM CORPORATION (Japan)
Inventor
  • Yasuda Hiroshi
  • Ooae Yoshihisa
  • Shibaoka Tatsuya
  • Murata Hidekazu

Abstract

66is held such that the vacuum partial pressure is less than or equal to 1×10-4666, and thermoelectrons are emitted from the lanthanum solution surface or cerium solution surface.

IPC Classes  ?

  • H01J 37/075 - Electron guns using thermionic emission from cathodes heated by particle bombardment or by irradiation, e.g. by laser
  • H01J 1/148 - Solid thermionic cathodes characterised by the material with compounds having metallic conductive properties, e.g. lanthanum boride, as an emissive material
  • H01J 37/06 - Electron sourcesElectron guns
  • H01J 37/065 - Construction of guns or parts thereof
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

4.

Tubular permanent magnet used in a multi-electron beam device

      
Application Number 14271940
Grant Number 09418815
Status In Force
Filing Date 2014-05-07
First Publication Date 2014-09-11
Grant Date 2016-08-16
Owner PARAM CORPORATION (Japan)
Inventor Yasuda, Hiroshi

Abstract

There provided a device for effectively drawing a fine pattern using a permanent magnet. The device has an outer cylinder 201 composed of a cylindrical ferromagnet with a Z axis as a central axis, a cylindrical permanent magnet 202 located inside the outer cylinder and polarized along the Z axis direction, a correction coil 204 located inside the cylindrical permanent magnet with a gap from the cylindrical permanent magnet, for adjusting a magnetic field strength generated by the cylindrical permanent magnet along the Z axis direction, and a coolant passage 203 located in the gap between the cylindrical permanent magnet and the correction coil, for allowing a coolant to flow therethrough and controlling temperature changes in the cylindrical permanent magnet.

IPC Classes  ?

  • H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
  • H01J 3/24 - Magnetic lenses using permanent magnets only
  • B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
  • B82Y 40/00 - Manufacture or treatment of nanostructures
  • H01J 37/143 - Permanent magnetic lenses
  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
  • H01J 3/20 - Magnetic lenses

5.

Electron beam lithography device and lithographic method

      
Application Number 14349390
Grant Number 08878143
Status In Force
Filing Date 2012-09-27
First Publication Date 2014-08-21
Grant Date 2014-11-04
Owner Param Corporation (Japan)
Inventor Yasuda, Hiroshi

Abstract

A high-accuracy and high-speed lithographic pattern is acquired by forming a square lattice matrix beam group with an interval which is an integral multiple of a beam size in a two-dimensional plane, switching on and off the mesh of a device to be drawn by a bitmap signal, forming a desired beam shape, deflecting the beam to a necessary position, and radiating a beam with a whole blanker being opened after the beam state is stabilized. On and off signals and a vector scan signal of each beam are provided, and the whole blanker is released after the beam is stabilized, and thus high-accuracy and high-speed lithography is performed with a small amount of data. When the total number of shots exceeds a constant value, the pattern data are modified and high-speed lithography is achieved. A semiconductor reversed bias p-n junction technique is preferably used for an individual blanker electrode.

IPC Classes  ?

  • H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
  • H01J 37/244 - DetectorsAssociated components or circuits therefor
  • H01J 3/26 - Arrangements for deflecting ray or beam
  • G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
  • H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
  • H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects

6.

ELECTRON BEAM LITHOGRAPHY DEVICE AND LITHOGRAPHIC METHOD

      
Application Number JP2012074980
Publication Number 2013/051467
Status In Force
Filing Date 2012-09-27
Publication Date 2013-04-11
Owner PARAM CORPORATION (Japan)
Inventor Yasuda, Hiroshi

Abstract

A high-accuracy and high-speed lithographic pattern is acquired by forming a square lattice matrix beam group with an interval which is an integer multiple of a beam size in a two dimensional plane, switching on and off the mesh of a device to be drawn by a bitmap signal, forming a desired beam shape, deflecting the beam to a necessary position, and radiating a beam with a whole blanker being opened after the beam state is stabilized. On and off signals and a vector scan signal of each beam are provided, and the whole blanker is released after the beam is stabilized, and thus high-accuracy and high-speed lithography is performed with a small amount of data. When the total number of shots exceeds a constant value, the pattern data is modified and high-speed lithography is achieved. A semiconductor reversed bias p-n junction technique is preferably used for an individual blanker electrode.

IPC Classes  ?

  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
  • H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching

7.

ELECTRON GUN AND ELECTRON BEAM DEVICE

      
Application Number JP2011054377
Publication Number 2012/114521
Status In Force
Filing Date 2011-02-25
Publication Date 2012-08-30
Owner PARAM CORPORATION (Japan)
Inventor Yasuda Hiroshi

Abstract

A cathode electron gun (104) is column shaped, and emits electrons by being heated. A holder (103), which covers the bottom and sides of the cathode electron gun, has electrical conductivity that holds the cathode electron gun, and is composed of a material that does not easily react with the cathode electron gun when in a heated state, is provided. The tip of the cathode electron gun (104) protrudes from the holder (103) so as to be exposed, and electrons are emitted from the tip toward the front by applying an electric field to the tip.

IPC Classes  ?

  • H01J 1/13 - Solid thermionic cathodes
  • H01J 1/26 - Supports for the emissive material
  • H01J 1/304 - Field-emissive cathodes
  • H01J 37/06 - Electron sourcesElectron guns
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

8.

ELECTRON LENS AND THE ELECTRON BEAM DEVICE

      
Application Number JP2011074588
Publication Number 2012/057166
Status In Force
Filing Date 2011-10-25
Publication Date 2012-05-03
Owner PARAM CORPORATION (Japan)
Inventor Yasuda Hiroshi

Abstract

A fine pattern is drawn effectively using a permanent magnet. Provided are: an outside cylinder (201) formed from a cylindrical magnetic body with the Z axis as the center axis; a cylindrical permanent magnet (202) disposed inside the outside cylinder and magnetized in the direction of the Z axis; a correction coil (204) that is disposed in the space within the cylindrical permanent magnet on the inside of the cylindrical permanent magnet and adjusts the magnetic field intensity from the cylindrical permanent magnet in the direction of the Z axis; and a refrigerant flow path (203) that is disposed in the space between the cylindrical permanent magnet and the correction coil, has a refrigerant made to flow inside, and suppresses temperature changes in the cylindrical permanent magnet.

IPC Classes  ?

  • H01J 37/143 - Permanent magnetic lenses
  • H01J 37/141 - Electromagnetic lenses
  • H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or