An electron gun device according to the present invention emits an electron beam by means of heating to a high temperature in a vacuum. According to the present invention, the surface of a material (108, 125), which emits an electron beam, is a hydrogenated metal that is melted and in a liquid state during a high-temperature operation; the liquid hydrogenated metal is contained in a hollow cover tube container (102, 124), which is in a solid state during the high-temperature operation, in the form of a hydrogenated liquid metal or in the form of a liquid metal before hydrogenation, and heated together with the cover tube container (102, 124) to a high temperature; subsequently, the hydrogenated liquid metal is exposed from the cover tube container (102, 124) and forms a liquid surface where gravity, the electric field and the surface tension of the liquid surface are balanced; and an electron beam is emitted from the exposed surface of the hydrogenated liquid metal.
An electron gun device according to the present invention emits an electron beam by means of heating to a high temperature in a vacuum. According to the present invention, the surface of a material (108, 125), which emits an electron beam, is a hydrogenated metal that is melted and in a liquid state during a high-temperature operation; the liquid hydrogenated metal is contained in a hollow cover tube container (102, 124), which is in a solid state during the high-temperature operation, in the form of a hydrogenated liquid metal or in the form of a liquid metal before hydrogenation, and heated together with the cover tube container (102, 124) to a high temperature; subsequently, the hydrogenated liquid metal is exposed from the cover tube container (102, 124) and forms a liquid surface where the gravity, the electric field and the surface tension of the liquid surface are balanced; and an electron beam is emitted from the exposed surface of the hydrogenated liquid metal.
66is held such that the vacuum partial pressure is less than or equal to 1×10-4666, and thermoelectrons are emitted from the lanthanum solution surface or cerium solution surface.
H01J 37/075 - Canons à électrons utilisant l'émission thermo-ionique de cathodes chauffées par bombardement de particules ou par irradiation, p. ex. par laser
H01J 1/148 - Cathodes thermo-ioniques solides caractérisées par le matériau constitutif avec des composés ayant des propriétés métalliques conductrices, p. ex. du borure de lanthane, comme matériau émissif
H01J 37/06 - Sources d'électronsCanons à électrons
H01J 37/065 - Montage des canons ou de leurs éléments constitutifs
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
4.
Tubular permanent magnet used in a multi-electron beam device
There provided a device for effectively drawing a fine pattern using a permanent magnet. The device has an outer cylinder 201 composed of a cylindrical ferromagnet with a Z axis as a central axis, a cylindrical permanent magnet 202 located inside the outer cylinder and polarized along the Z axis direction, a correction coil 204 located inside the cylindrical permanent magnet with a gap from the cylindrical permanent magnet, for adjusting a magnetic field strength generated by the cylindrical permanent magnet along the Z axis direction, and a coolant passage 203 located in the gap between the cylindrical permanent magnet and the correction coil, for allowing a coolant to flow therethrough and controlling temperature changes in the cylindrical permanent magnet.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
A high-accuracy and high-speed lithographic pattern is acquired by forming a square lattice matrix beam group with an interval which is an integral multiple of a beam size in a two-dimensional plane, switching on and off the mesh of a device to be drawn by a bitmap signal, forming a desired beam shape, deflecting the beam to a necessary position, and radiating a beam with a whole blanker being opened after the beam state is stabilized. On and off signals and a vector scan signal of each beam are provided, and the whole blanker is released after the beam is stabilized, and thus high-accuracy and high-speed lithography is performed with a small amount of data. When the total number of shots exceeds a constant value, the pattern data are modified and high-speed lithography is achieved. A semiconductor reversed bias p-n junction technique is preferably used for an individual blanker electrode.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/244 - DétecteursComposants ou circuits associés
H01J 3/26 - Dispositifs de déviation du rayon ou du faisceau
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
6.
ELECTRON BEAM LITHOGRAPHY DEVICE AND LITHOGRAPHIC METHOD
A high-accuracy and high-speed lithographic pattern is acquired by forming a square lattice matrix beam group with an interval which is an integer multiple of a beam size in a two dimensional plane, switching on and off the mesh of a device to be drawn by a bitmap signal, forming a desired beam shape, deflecting the beam to a necessary position, and radiating a beam with a whole blanker being opened after the beam state is stabilized. On and off signals and a vector scan signal of each beam are provided, and the whole blanker is released after the beam is stabilized, and thus high-accuracy and high-speed lithography is performed with a small amount of data. When the total number of shots exceeds a constant value, the pattern data is modified and high-speed lithography is achieved. A semiconductor reversed bias p-n junction technique is preferably used for an individual blanker electrode.
A cathode electron gun (104) is column shaped, and emits electrons by being heated. A holder (103), which covers the bottom and sides of the cathode electron gun, has electrical conductivity that holds the cathode electron gun, and is composed of a material that does not easily react with the cathode electron gun when in a heated state, is provided. The tip of the cathode electron gun (104) protrudes from the holder (103) so as to be exposed, and electrons are emitted from the tip toward the front by applying an electric field to the tip.
A fine pattern is drawn effectively using a permanent magnet. Provided are: an outside cylinder (201) formed from a cylindrical magnetic body with the Z axis as the center axis; a cylindrical permanent magnet (202) disposed inside the outside cylinder and magnetized in the direction of the Z axis; a correction coil (204) that is disposed in the space within the cylindrical permanent magnet on the inside of the cylindrical permanent magnet and adjusts the magnetic field intensity from the cylindrical permanent magnet in the direction of the Z axis; and a refrigerant flow path (203) that is disposed in the space between the cylindrical permanent magnet and the correction coil, has a refrigerant made to flow inside, and suppresses temperature changes in the cylindrical permanent magnet.
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