A substrate processing apparatus, comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50), and a substrate support (40) within the reaction chamber (50). The substrate support (40) comprises a heater element (45) in between a substrate support bottom part (41) and a substrate contact plate (42).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
2.
COUPLING AGENT, COATING SYSTEM COMPRISING THE SAME, RELATED METHOD AND USES
A coupling agent (10A) is provided, the coupling agent configured to bind to heterogenous substrate surfaces (12-1, 12-2) and comprising at least two non-identical functional groups R1and R2. By virtue of its functional groups the coupling agent renders heterogenous substrate surfaces with enhanced receptiveness to adhesion of subsequent chemical substances, such as surface coatings. A coating system comprising the coupling agent, a method for adapting heterogenous substrates to surface coatings, and related uses of the coupling agent and/or the coating system are further provided.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A method and apparatus for controlling dosage of a low vapor-pressure reactant comprising a processing chamber (110) for processing substrates, an inert gas source system, a first inlet line (130) connecting the inert gas source system to the processing chamber (110), a precursor source vessel (150) for housing a low vapor-pressure precursor (160), a second inlet line (185) connecting the inert gas source system to a buffer volume (180) comprising a head space (155) of the source vessel (150), a third inlet line (170) connecting the source vessel (150) to the first inlet line (130) through the buffer volume (180) via a first pulsing valve (V1), wherein the apparatus (100) is configured to adjust pressure in the buffer volume (180) to a predetermined level during a purge phase of a process cycle.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
4.
Method and apparatus for cleaning a reaction chamber
A method and substrate processing apparatus (100) for cleaning a reaction chamber (110) of the substrate processing apparatus (100), wherein cleaning gas is provided from a cleaning gas source (190), a first cleaning gas flow is fed through a first inlet (120) and a second cleaning gas flow through a second inlet (180) into the reaction chamber (110) for etching the reaction chamber, wherein the first cleaning gas flow and the second cleaning gas flow enter the reaction chamber (110) from different directions, and wherein the cleaning gas is activated before said etching.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
5.
A THIN-FILM DEPOSITION APPARATUS FOR BATCH PROCESSING
A substrate processing apparatus (100), comprising a reaction chamber (120) configured to accommodate a batch of substrates (130) arranged with their surfaces facing each other thus forming a substrate stack, and a fluid distributor (600) for establishing a fluid flow to the reaction chamber (120), wherein the fluid distributor (600) is configured to spread the fluid flow in a height direction of the substrate stack so as to enable a laminar flow to be developed within the reaction chamber to propagate through the length of said reaction chamber and the substrate stack
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A substrate processing system (1900) comprising, a reception module (1910) configured to load and unload substrates (130) to and from the substrate processing system (1900), and a heating module (1930) configured to heat substrates (130), and at least one processing module (1950) configured to process the substrates (130) with sequential self-limiting surface reactions, the at least one processing module (1910) comprising a laminar flow reaction chamber (120) and a substrate lifting system (500) configured to transfer substrates (130), in a direction perpendicular to surfaces thereof, between a loading position and a processing position, and a transfer unit (1910) comprising a robotic system configured to transfer the substrates (130) between said reception module, said heating module, and said at least one processing module.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/54 - Apparatus specially adapted for continuous coating
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
An apparatus, comprising a main body part of a laminar flow reaction chamber (120) comprising an inlet opening for precursor gas at its front side, an exhaust opening (190) at its rear side, and a lid opening at its top or bottom side, and a substrate holder (140) configured to accommodate a batch of substrates (130), the surfaces of the substrates facing each other thus forming a substrate stack, the substrate holder (140) forming a lid to cover the lid opening.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A substrate processing apparatus (100) that includes a reaction chamber (120) for accommodating substrates (130) arranged with their surfaces facing each other, a fluid distributor (600) for establishing a laminar fluid flow propagating from an entrance to the reaction chamber (120) through the length of the reaction chamber (120) and between the substrate surfaces, and a liftable substrate rotating system (500) configured to transfer the substrates (130), in a direction perpendicular to the substrate surfaces, between a loading position and a processing position and to rotate the substrates (130) in the processing position within the reaction chamber (120).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
9.
MULTIFUNCTIONAL COATING, METHOD OF MANUFACTURING THEREOF, RELATED COATED ITEMS AND USES
A method for forming a coating on a substrate is provided, the method comprises: using a molecular layer deposition (MLD) process depositing at least one layer directly or indirectly on a surface, and an atomic layer deposition (ALD) process, depositing an inorganic film on/over the at least one layer. In the formed coating conditions are established which allow unbound, unreacted and/or partially reacted precursors to enter chemical interaction with harmful environmental species penetrated into the coating at defective sites thereof and seal said defective sites through formation of a sealing compound. A laminate coating, uses thereof and coated items are further provided.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A61B 8/00 - Diagnosis using ultrasonic, sonic or infrasonic waves
C23C 16/02 - Pretreatment of the material to be coated
A precursor container apparatus, comprising a first volume to house precursor material, a second volume separated from the first volume by a partition wall eliminating gas exchange between the first and second volumes. The precursor container apparatus further comprises a route for the precursor material from the first volume to the second volume and an arrangement configured to raise a surface level of the precursor material via the route into the second volume and to maintain the surface level at a pre-determined level within the second volume.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
11.
NANOLAMINATE COATING, RELATED COATED ITEMS AND USES, METHOD FOR IMPROVING RESISTANCE OF A SUBSTRATE TO CORROSION IN ESSENTIALLY SALINE ENVIRONMENTS, MEDICAL DEVICE
A corrosion resistant coating for substrates susceptible to corrosion in essentially saline environments, optionally, in vivo environments, is provided. The coating is provided as a nanolaminate structure comprising a plurality of deposition layers formed through a process of chemical deposition in vapour phase, preferably, through Atomic Layer Deposition (ALD) such that the deposition layers having a first composition alternate with the deposition layers having a second composition different from the first composition. A nanolaminate stack produced thereby forms a diffusion barrier that efficiently prevents corrosive species, such as corrosive ionic species, originating from essentially saline environments from contacting the substrate. Related method for improving resistance of a substrate to corrosion in essentially saline media and uses of the nanolaminate coating are further provided.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
12.
PLASMA RESISTANT COATING, RELATED PRODUCTION METHOD AND USES
A method of producing coated substrates resistant to plasma corrosion and a related coating are provided. The method includes depositing, over at least a portion of a substrate, an yttrium-containing plasma resistant coating through a process of chemical deposition in vapour phase, preferably, through Atomic Layer Deposition (ALD). In some configurations, the plasma resistant coating is formed with a mixture film composed of a mixture of an aluminium oxide compound and an yttrium oxide compound, for example. In some instances, a multilayer laminate structure including the mixture films alternating with deposition films composed of a metal fluoride compound is formed. A coated component for use in a plasma processing apparatus and a method for improving resistance of a substrate to plasma corrosion are further provided.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A substrate processing apparatus, includes a reaction chamber, an outer chamber at least partly surrounding the reaction chamber and forming an intermediate volume therebetween, and a substrate support within the reaction chamber, includingn a hollow inner volume. The hollow inner volume and the intermediate volume are in fluid communication through a channel extending from the hollow inner volume to the intermediate volume.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
An apparatus, a method and a valve with a reactive chemical inlet, a reaction chamber outlet, and a closure having an open and closed configuration to open and close, respectively, a route from the reactive chemical inlet to the reaction chamber outlet, the valve further including an additional cleaning chemical inlet at a downstream side of the closure to purge the closure.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
F16K 1/44 - Details of seats or valve members of double-seat valves
16.
METHOD, INSERT AND APPARATUS FOR PROCESS CONTROL AND MONITORING OF THIN FILM DEPOSITION
A method for determining penetration depth of a thin film process precursor, comprising providing an insert (100), arranging the insert (100) to contact a substrate (200) to form a plurality of spaces (101) in between the insert (100) and the substrate (200), and feeding the precursor(s) into the formed spaces (101) to determine the penetration depth of the precursor.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A method for manufacturing a coated item 10 in a chemical deposition reactor and a coated item produced by said method are provided. The method comprises deposition of a first coating on a first surface of the item 10, and/or deposition of a second coating on a second surface of said item.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
A61F 2/90 - Stents in a form characterised by wire-like elementsStents in a form characterised by a net-like or mesh-like structure characterised by a net-like or mesh-like structure
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A substrate processing apparatus, includes a reaction chamber, a central processing volume within a vertically oriented central processing portion of the reaction chamber, to expose at least one substrate to self-limiting surface reactions in the central processing volume, at least two lateral extensions in the reaction chamber laterally extending from the central processing portion, and an actuator configured to reversibly move at least one substrate between the lateral extension(s) and the central processing volume.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
A deposition or cleaning apparatus comprising an outer vacuum chamber and a reaction chamber inside the outer chamber forming a double chamber structure. The reaction chamber is configured to move between a processing position and a lowered position inside the outer vacuum chamber, the lowered position being for loading one or more substrates into the reaction chamber.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
20.
MULTIFUNCTIONAL COATING, METHOD OF MANUFACTURING THEREOF, RELATED COATED ITEMS AND USES
A method for forming a coating on a substrate is provided, the method comprises: using a molecular layer deposition (MLD) process depositing at least one layer directly or indirectly on a surface, and an atomic layer deposition (ALD) process, depositing an inorganic film on/over the at least one layer. In the formed coating conditions are established which allow unbound, unreacted and/or partially reacted precursors to enter chemical interaction with harmful environmental species penetrated into the coating at defective sites thereof and seal said defective sites through formation of a sealing compound. A laminate coating, uses thereof and coated items are further provided.
B05D 1/00 - Processes for applying liquids or other fluent materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
21.
Adjustable fluid inlet assembly for a substrate processing apparatus and method
A fluid inlet assembly for a substrate processing apparatus includes a fluid inlet pipe configured to pass through a wall of a sealed pressure vessel, a resilient element around the fluid inlet pipe outside the sealed pressure vessel coupling the fluid inlet pipe to the wall, and first and second end parts, the resilient element being coupled therebetween.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
B01J 3/03 - Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A substrate processing apparatus (100), comprising a reaction chamber (20) for processing at least one substrate, and a deformable in-feed assembly (85) comprising an upper (70)and a lower (80) portion movable with respect to each other, the deformable in-feed assembly (85) being configured to deform between a vertically extended state facilitating a reactant flow towards the reaction chamber (20), and a vertically retracted state allowing substrate loading, and a resilient tubular conduit (150) coupled to the upper portion (70) of the deformable in-feed assembly (85).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/452 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species
Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A precursor container apparatus, comprising a first volume to house precursor material, a second volume separated from the first volume by a partition wall eliminating gas exchange between the first and second volumes. The precursor container apparatus further comprises a route for the precursor material from the first volume to the second volume and an arrangement configured to raise a surface level of the precursor material via the route into the second volume and to maintain the surface level at a pre-determined level within the second volume.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A substrate processing apparatus includes an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.
C23C 16/511 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A substrate processing apparatus, including a reaction chamber enclosing a substrate processing space and a chemical exit space, further including a substrate support. The apparatus is configured to direct a chemical flow into the substrate processing space, to expose a substrate supported by the substrate support to surface reactions, therefrom via a first gap into a first expansion volume of the chemical exit space, and therefrom via a second gap towards an exhaust pump, the apparatus being configured to provide the chemical flow with a choked flow effect in at least one of the first and second gaps.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A substrate processing apparatus, including a reaction chamber to process a substrate, a photon source to provide the reaction chamber with photons from the top side of the reaction chamber, a substrate support to support the substrate, a chemical inlet to provide the reaction chamber with a reactive chemical; and a chemical outlet to exhaust gases from the reaction chamber, the chemical outlet including a surface separating the reaction chamber from a surrounding space.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
29.
NANOLAMINATE COATING, RELATED COATED ITEMS AND USES, METHOD FOR IMPROVING RESISTANCE OF A SUBSTRATE TO CORROSION IN ESSENTIALLY SALINE ENVIRONMENTS, MEDICAL DEVICE
in vivoin vivo environments, is provided. The coating is provided as a nanolaminate structure comprising a plurality of deposition layers formed through a process of chemical deposition in vapour phase, preferably, through Atomic Layer Deposition (ALD) such that the deposition layers having a first composition alternate with the deposition layers having a second composition different from the first composition. A nanolaminate stack produced thereby forms a diffusion barrier that efficiently prevents corrosive species, such as corrosive ionic species, originating from essentially saline environments from contacting the substrate. Related method for improving resistance of a substrate to corrosion in essentially saline media and uses of the nanolaminate coating are further provided.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C23C 28/04 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of inorganic non-metallic material
A61B 5/00 - Measuring for diagnostic purposes Identification of persons
A61B 8/00 - Diagnosis using ultrasonic, sonic or infrasonic waves
A61F 2/00 - Filters implantable into blood vesselsProstheses, i.e. artificial substitutes or replacements for parts of the bodyAppliances for connecting them with the bodyDevices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
A61F 11/00 - Methods or devices for treatment of the ears or hearing sense Non-electric hearing aidsMethods or devices for enabling ear patients to achieve auditory perception through physiological senses other than hearing senseProtective devices for the ears, carried on the body or in the hand
A61L 27/00 - Materials for prostheses or for coating prostheses
A method of producing coated substrates resistant to plasma corrosion and a related coating are provided. The method comprises depositing, over at least a portion of a substrate, an yttrium-containing plasma resistant coating through a process of chemical deposition in vapour phase, preferably, through Atomic Layer Deposition (ALD). In some configurations, the plasma resistant coating is formed with a mixture film composed of a mixture of an aluminium oxide compound and an yttrium oxide compound, for example. In some instances, a multilayer laminate structure comprising said mixture films alternating with deposition films composed of a metal fluoride compound is formed. A coated component for use in a plasma processing apparatus and a method for improving resistance of a substrate to plasma corrosion are further provided.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C23C 28/04 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of inorganic non-metallic material
A substrate processing apparatus, comprising a reaction chamber, an outer chamber at least partly surrounding the reaction chamber wherein an intermediate space is formed between the reaction chamber and the outer chamber, at least one heater element, at least one heat distributor in the intermediate space, and at least one heater element feedthrough in the outer chamber allowing at least a part of the at least one heater element to pass through into the intermediate space and to couple with the at least one heat distributor.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
F27D 99/00 - Subject matter not provided for in other groups of this subclass
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A substrate processing apparatus (100), comprising a reaction chamber (20) having an upper portion (20a) and a lower portion (20b) sealing an inner volume of the reaction chamber (20) for substrate processing, the lower portion (20b) being movable apart from the upper portion (20a) to form a substrate loading gap therebetween, a substrate support system comprising a support table (31) and at least one support element (70) vertically movable in relation to the support table (31) and extending through the support table (31) to receive a substrate within the reaction chamber (20), and a stopper (90) stopping a downward movement of the at least one support element (70) at a substrate loading level.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A substrate processing apparatus, includes a reaction chamber, an outer chamber at least partly surrounding the reaction chamber wherein an intermediate space is formed between the reaction chamber and the outer chamber, at least one heater element, at least one heat distributor in the intermediate space, and at least one heater element feedthrough in the outer chamber allowing at least a part of the at least one heater element to pass through into the intermediate space and to couple with the at least one heat distributor.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
a) to form a substrate loading gap therebetween, a substrate support system comprising a support table (31) and at least one support element (70) vertically movable in relation to the support table (31) and extending through the support table (31) to receive a substrate within the reaction chamber (20), and a stopper (90) stopping a downward movement of the at least one support element (70) at a substrate loading level.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A substrate processing apparatus and a related method, including a reaction chamber and a plasma in-feed line where plasma species is introduced into the reaction chamber for a deposition target. The plasma in-feed line includes an inlet part configured to speed up gas velocity.
C23C 16/452 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A method and a substrate processing apparatus including a vertical flow reaction chamber, a flow guiding part and a substrate support at a horizontally central area of the reaction chamber, the substrate support residing underneath the flow guiding part, and the flow guiding part forcing the vertical flow from above the flow guiding part to go round the flow guiding part on its downward way towards the substrate support.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A substrate processing apparatus including a reaction chamber with an inlet opening, an in-feed line to provide a reactive chemical into the reaction chamber via the inlet opening, incoming gas flow control means in the in-feed line, the in-feed line extending from the flow control means to the reaction chamber, the in-feed line in this portion between the flow control means and the reaction chamber having the form of an inlet pipe with a gas-permeable wall, the inlet pipe with the gas-permeable wall extending towards the inlet opening through a volume at least partly surrounding the inlet pipe, and the apparatus (100, 800) being configured to provide fluid to surround and enter the inlet pipe in said portion.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
A substrate processing apparatus (100), comprising a reaction chamber (130), a central processing volume (60) within a vertically oriented central processing portion (70,72) of the reaction chamber (130), to expose at least one substrate (50) to self-limiting surface reactions in the central processing volume (60), at least two lateral extensions (135a,135b) in the reaction chamber (130) laterally extending from the central processing portion (70,72), and an actuator (201) configured to reversibly move at least one substrate (50) between the lateral extension(s) (135a, 135b) and the central processing volume (60).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
A substrate processing apparatus comprising an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/513 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
A substrate processing apparatus comprising an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/452 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
A substrate processing apparatus, comprising a reaction chamber (120) enclosing a substrate processing space (50) and a chemical exit space (150), further comprising a substrate support (110). The apparatus is configured to direct a chemical flow into the substrate processing space (50), to expose a substrate (130) supported by the substrate support (110) to surface reactions, therefrom via a first gap (126) into a first expansion volume (151) of the chemical exit space (150), and therefrom via a second gap (127) towards an exhaust pump (180, 185, 190, 195, 200), the apparatus being configured to provide the chemical flow with a choked flow effect in at least one of the first and second gaps (126, 127).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
44.
Adjustable fluid inlet assembly for a substrate processing apparatus and method
A substrate processing apparatus, includes a sealed pressure vessel, such as an Atomic Layer Deposition, ALD, apparatus, a fluid inlet assembly attached to a wall of the sealed pressure vessel, the fluid inlet assembly having a fluid inlet pipe passing through the wall, and a resilient element in the fluid inlet assembly around the fluid inlet pipe coupling the inlet pipe to the wall, where one of an interior surface and an exterior surface of the resilient element sees pressure prevailing within the pressure vessel and the other sees ambient pressure, and where the fluid inlet pipe prevents fluid carried inside from being in contact with the resilient element, and a relating method.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
B01J 3/03 - Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
A substrate processing apparatus (100), comprising a reaction chamber (130) to process a substrate (110), a photon source (105) to provide the reaction chamber (130) with photons from the top side of the reaction chamber, a substrate support (115) to support the substrate (110), a chemical inlet (141a, 141b) to provide the reaction chamber (130) with a reactive chemical; and a chemical outlet (140a, 140b) to exhaust gases from the reaction chamber (130), the chemical outlet (140a, 140b) comprising a surface separating the reaction chamber (130) from a surrounding space.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
A substrate processing apparatus including an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
47.
FLUID DISTRIBUTING DEVICE FOR A THIN-FILM DEPOSITION APPARATUS, RELATED APPARATUS AND METHODS
A fluid distributing device 100 for directing fluids into a reaction chamber 201 of a thin-film deposition apparatus, related apparatus, systems and methods are provided. The device 100 comprises an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for mixing said fluids. From the transition region, fluidic flow is directed into the reaction chamber 201 to propagate between the substrates 10 in a strictly laminar manner. By the invention, uniformity of precursor distribution on the substrates can be markedly improved.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
48.
FLUID DISTRIBUTING DEVICE FOR A THIN-FILM DEPOSITION APPARATUS, RELATED APPARATUS AND METHODS
A fluid distributing device 100 for directing fluids into a reaction chamber 201 of a thin-film deposition apparatus, related apparatus, systems and methods are provided. The device 100 comprises an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for mixing said fluids. From the transition region, fluidic flow is directed into the reaction chamber 201 to propagate between the substrates 10 in a strictly laminar manner. By the invention, uniformity of precursor distribution on the substrates can be markedly improved.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
49.
Fluid distributing device for a thin-film deposition apparatus, related apparatus and methods
A thin-film deposition apparatus, related systems and methods are provided. The thin-film deposition apparatus 200 comprises a reaction chamber 201 for accommodating substrates 10 arranged with their side faces adjacent to each other and a fluid distribution device 100 with an expansion region 101 into which precursor fluid(s) enter via a number of inlets 103, and a transition region 102 for mixing said fluids. From the transition region, fluidic flow is directed into the reaction chamber 201 to propagate between the substrates 10 in a strictly laminar manner. By the invention, uniformity of precursor distribution on the substrates can be markedly improved.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/515 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 39/24 - Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof
A reaction chamber of a substrate processing apparatus contains a reaction space. At least three lateral chemical inlets point towards a centre area of the reaction space each from different directions, each of the at least three lateral chemical inlets providing an individually closable route for a first precursor chemical to the reaction space.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A substrate processing apparatus and a related method, where plasma species is introduced via a plasma in-feed line into a reaction chamber for a deposition target. The plasma in-feed line goes via a plasma formation section. The velocity of the plasma species within the plasma in-feed line is speeded up by a constriction downstream of the plasma formation section.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A substrate processing apparatus (100) and a related method, comprising a reaction chamber (130) and a plasma in-feed line (115) where plasma species is introduced into the reaction chamber (130) for a deposition target (160). The plasma in-feed line (115) comprises an inlet part (110) configured to speed up gas velocity.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A substrate processing apparatus that comprises a susceptor having a supporting interface to receive a substrate, a support part having a supporting interface, a moving arrangement for moving the susceptor to bring the substrate into a contact with the supporting interface of the support part, and for further moving the susceptor to detach the substrate from the supporting interface of the susceptor, and an inlet to provide a protective fluid flow into a space in between the substrate and the support part, and a related method.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A method for manufacturing a coated item 10 in a chemical deposition reactor and a coated item produced by the method are provided. The method includes deposition of a first coating on a first surface of the item 10, and/or deposition of a second coating on a second surface of the item.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
A61F 2/90 - Stents in a form characterised by wire-like elementsStents in a form characterised by a net-like or mesh-like structure characterised by a net-like or mesh-like structure
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A61F 2/00 - Filters implantable into blood vesselsProstheses, i.e. artificial substitutes or replacements for parts of the bodyAppliances for connecting them with the bodyDevices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
Chemical deposition reactor assembly configured for formation of coatings on surfaces of fluid-permeable materials, such as porous materials, by chemical deposition is provided, the reactor assembly includes a reaction chamber configured to receive, at least in part, a fluid-permeable substrate with a target surface to be coated; at least one reactive fluid intake line configured to mediate a flow of reactive fluid into the reaction chamber, and an inert fluid delivery arrangement with at least one enclosed section configured to mediate a flow of inert fluid through the substrate towards its' target surface such, that at the surface the flow of inert fluid encounters the flow of reactive fluid, whereby a coating is formed at the target surface of the fluid-permeable substrate.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
B05C 7/04 - Apparatus specially designed for applying liquid or other fluent material to the inside of hollow work the liquid or other fluent material flowing or being moved through the workApparatus specially designed for applying liquid or other fluent material to the inside of hollow work the work being filled with liquid or other fluent material and emptied
B05C 9/04 - Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by groups , or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to opposite sides of the work
B05C 13/00 - Means for manipulating or holding work, e.g. for separate articles
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A substrate processing apparatus (100, 800), comprising a reaction chamber (130) with an inlet opening (121, 821), an in-feed line (101) to provide a reactive chemical into the reaction chamber (130) via the inlet opening (121, 821), incoming gas flow control means (105, 805) in the in-feed line (101), the in-feed line (101) extending from the flow control means (105, 805) to the reaction chamber (130), the in-feed line (101) in this portion between the flow control means (105, 805) and the reaction chamber (130) having the form of an inlet pipe (111, 811) with a gas-permeable wall, the inlet pipe (111, 811) with the gas-permeable wall extending towards the inlet opening (121, 821) through a volume at least partly surrounding the inlet pipe (111, 811), and the apparatus (100, 800) being configured to provide fluid to surround and enter the inlet pipe (111, 811) in said portion.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A method and a substrate processing apparatus (100) comprising a vertical flow reaction chamber (130), a flow guiding part (110, 310) and a substrate support (120, 220) at a horizontally central area of the reaction chamber (130), the substrate support (120, 220) residing underneath the flow guiding part (110, 310), and the flow guiding part (110, 310) forcing the vertical flow (115, 315) from above the flow guiding part (110, 310) to go round the flow guiding part (110) on its downward way towards the substrate support (120).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
A structure is provided comprising a number of surfaces 10, 20 joined together with an adhesive 30, said structure being configured to reshape upon at least partial degradation of the adhesive 30. Related method and uses are further provided.
A substrate processing apparatus, including a reaction chamber, at least one coating material inlet to the reaction chamber, a movable substrate support to support 3D substrates to be coated, and an actuator configured to move the substrate support to change the orientation of said 3D substrates during substrate processing. A method for coating 3D substrates, the method including providing 3D substrates within a reaction chamber on a substrate support, feeding at least one coating material into the reaction chamber, and changing the orientation of said 3D substrates during substrate processing by actuating a movement of the substrate support.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A strain sensor that includes a first atomic layer deposition layer, a flexible molecular layer deposition layer on top of the first atomic layer deposition layer, and a second atomic layer deposition layer on top of the molecular layer deposition layer.
G01L 1/22 - Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluidsMeasuring force or stress, in general by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
A61B 5/00 - Measuring for diagnostic purposes Identification of persons
A medical stent, including a squeezable and expandable tubular wire mesh and an anti-sticking atomic layer deposition coating deposited on surfaces of the wire mesh. A method for manufacturing a medical stent, including taking a squeezable and expandable (i.e., deformable) tubular wire mesh, and depositing an anti-sticking atomic layer deposition coating on surfaces of the wire mesh to prevent the wire mesh from being stuck with itself when expanding from a squeezed form to a fully expanded form.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A61F 2/04 - Hollow or tubular parts of organs, e.g. bladders, tracheae, bronchi or bile ducts
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
62.
Biocompatible medical device visible in x-ray and method for manufacturing thereof
A biocompatible medical device is provided having at least one surface, wherein at least a part of this surface is coated with a biocompatible layer configured to provide visibility of the device in X-rays.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A medical device is provided comprising an at least one surface deposited with at least a first conformal coating and a second conformal coating deposited on the first conformal coating, wherein the first conformal coating comprises the first chemical substance and the second conformal coating comprises the second chemical substance. In some instances, the first coating is deposited over the first chemical substance and the second coating is deposited over the second chemical substance.
A61F 2/82 - Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
64.
Method and apparatus for cleaning medical instruments and for detecting residue thereon
A method for cleaning a medical instrument and for detecting residue thereon is provided in which method a non-sterile or conventionally sterilized medical instrument is exposed to pressure below 100 hPa, and, subsequently, exposed to at least one gas reactive to the residue.
A61B 1/12 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopesIlluminating arrangements therefor with cooling or rinsing arrangements
A61B 1/00 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopesIlluminating arrangements therefor
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A substrate holder 10 in the form of a mesh structure with a sample-receiving surface 10A is provided. The substrate holder 10 containing the samples 21 is at least partially folded and inserted into a substrate processing apparatus to produce coated samples 21A by directing at least one coating material P1, P2, . . . , Pn onto the samples through the mesh structure. A substrate processing system and a method for producing coated substrates are further provided.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A medical implant structure is provided comprising a substrate 10 with at least a first surface and a second surface that surfaces differ from one another with regard to at least one property in relation to biological material.
A device for wound care, related method of manufacturing and uses are provided. The device 100 comprises a base layer 10, a functional layer 20 supported on the base layer and containing at least one chemical substance 21 suitable for wound care and a coating film 22 laid over said functional layer and having a skin-contact surface 22A. The coating film 22 is configured, upon being contacted with skin, to dissolve and to release said chemical substance 21 to skin through the skin-contact surface 22A. The coating film 22 is preferably an atomic layer deposition (ALD) film.
A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
A61B 5/00 - Measuring for diagnostic purposes Identification of persons
A61L 15/18 - Bandages, dressings or absorbent pads for physiological fluids such as urine or blood, e.g. sanitary towels, tampons containing inorganic materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A medical instrument, including an atomic layer deposition, ALD, coating to indicate the type of the medical instrument, and use of ALD to indicate number of re-uses of a medical instrument.
A61B 90/00 - Instruments, implements or accessories specially adapted for surgery or diagnosis and not covered by any of the groups , e.g. for luxation treatment or for protecting wound edges
A61B 90/92 - Identification means for patients or instruments, e.g. tags coded with colour
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A61L 31/14 - Materials characterised by their function or physical properties
A61B 17/00 - Surgical instruments, devices or methods
A method for coating a vaporizing substrate includes depositing a film coating 12 on at least a part of a substrate 10 during the time when the substrate undergoes phase transition from essentially liquid phase to gaseous phase, where the substrate includes a chemical substance that participates in chemical deposition reaction(s) in gaseous phase, the gaseous species 101 formed upon vaporizing at least the portion of the substrate material, when undergoing chemical deposition reactions in gaseous phase, produce particulate 11 that forms at least one coating layer to produce the film coating 12.
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A method for formation of a patterned solder mask (10) on a substrate is provided, in which method the mask is deposited by a process of chemical deposition in vapor phase. A method for manufacturing a printed circuit board and/or an electronic component comprising formation of said patterned solder mask is further provided.
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
An apparatus, a method and a valve with a reactive chemical inlet, a reaction chamber outlet, and a closure having an open and closed configuration to open and close, respectively, a route from the reactive chemical inlet to the reaction chamber outlet, the valve further including an additional cleaning chemical inlet at a downstream side of the closure to purge the closure.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
F16K 1/44 - Details of seats or valve members of double-seat valves
An apparatus includes, a reaction chamber to accommodate a substrate to be processed, and a pulsing valve fluidly connected to the reaction chamber. The pulsing valve has a reactive chemical inlet to receive reactive chemical, a reaction chamber outlet to mediate provided fluid connection of the pulsing valve to the reaction chamber, a closure to control fluid flow from the reactive chemical inlet in the pulsing valve to the reaction chamber outlet, and an additional flow channel inlet or outlet to continuously purge the closure through the additional flow channel during an entire substrate processing cycle or sequence.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
73.
Deposition or cleaning apparatus with movable structure
A deposition or cleaning apparatus including an outer vacuum chamber and a reaction chamber inside the outer chamber forming a double chamber structure. The reaction chamber is configured to move between a processing position and a lowered position inside the outer vacuum chamber, the lowered position being for loading one or more substrates into the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
An atomic layer deposition (ALD) method in an ALD reactor including a reaction chamber housing a substrate vessel, and an isolated vibration source outside of the reaction chamber or isolated within the reaction chamber. Particulate material within the substrate vessel is coated by self-saturating surface reactions using a top-to-bottom precursor flow passing through the substrate vessel, and movements are caused in the particulate material within the substrate vessel by the isolated vibration source while coating the particulate material.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
A system and method for atomic layer deposition, ALD, where an actuator arrangement is configured to receive a batch of substrates and transfer the substrates through a first load-lock horizontally into a vacuum chamber, and to lower the substrates within the vacuum chamber into a reaction chamber thus closing the reaction chamber with a lid.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
An apparatus and method for loading a plurality of substrates into a substrate holder in a loading chamber of a deposition reactor to form a vertical stack of horizontally oriented substrates within said substrate holder, for turning the substrate holder to form a horizontal stack of vertically oriented substrates, and for lowering the substrate holder into a reaction chamber of the deposition reactor for deposition. The technical effects achieved are: a top loading system for a vertical flow deposition reactor in which the substrates can be loaded with horizontal orientation, eliminating the need for flipping each substrate separately by flipping the whole substrate holder and minimizing a loading distance in a reactor cluster.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A substrate processing apparatus, comprising a sealed pressure vessel, such as an Atomic Layer Deposition, ALD, apparatus, a fluid inlet assembly attached to a wall of the sealed pressure vessel, the fluid inlet assembly having a fluid inlet pipe passing through the wall, and a resilient element in the fluid inlet assembly around the fluid inlet pipe coupling the inlet pipe to the wall, where one of an interior surface and an exterior surface of the resilient element sees pressure prevailing within the pressure vessel and the other sees ambient pressure, and where the fluid inlet pipe prevents fluid carried inside from being in contact with the resilient element, and a relating method.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Machines and machine tools for atomic scale layer
deposition; atomic scale layer deposition apparatus. Data processing equipment; computers and computer programmes
for atomic scale layer deposition apparatus. Treatment and coating of materials by atomic scale layer
deposition method and consulting connected thereto.
A substrate processing apparatus, a method and a valve comprising a reactive chemical inlet, a reaction chamber outlet and a closure having an open and closed configuration to open and close, respectively, a route from the reactive chemical inlet to the reaction chamber outlet, the valve further comprising an additional cleaning chemical inlet at a downstream side of the closure to purge the closure. Objects of the invention are to avoid undesired particle generation while enabling high pulsing speed, to improve cleaning by purging reactive material away from surfaces and to implement a mechanically smaller pulsing valve.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
An apparatus, comprising a reaction chamber to accommodate a substrate (600) to be processed, and a pulsing valve (100, 300, 900, 900', 900'', 900*) fluidly connected to the reaction chamber (530, 1430). The pulsing valve comprises a reactive chemical inlet (101, 901, 901', 901'') to receive reactive chemical, a reaction chamber outlet (104, 904, 904'') to mediate provided fluid connection of the pulsing valve to the reaction chamber (530, 1430), a closure (111, 191, 991) to control fluid flow from the reactive chemical inlet (101, 901, 901', 901'') in the pulsing valve to the reaction chamber outlet (104, 904, 904''), and an additional flow channel inlet or outlet (103, 303, 903, 903', 903'') to continuously purge the closure (111, 191) through the additional flow channel during an entire substrate processing cycle or sequence.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
The invention relates to methods and apparatus in which precursor vapor is guided along at least one in-feed line into a reaction chamber of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A reaction chamber of a substrate processing apparatus contains a reaction space. At least three lateral chemical inlets point towards a centre area of the reaction space each from different directions, each of the at least three lateral chemical inlets providing an individually closable route for a first precursor chemical to the reaction space.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 18/00 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating
C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
(1) Machines and machine tools for atomic scale layer deposition; atomic scale layer deposition apparatus, namely, industrial chemical and industrial photochemical reactors; atomic scale layer deposition apparatus for fabrication of ultrathin, highly uniform and conformal material layers of thin film coating.
(2) Data processing equipment for monitoring quality and control of the atomic scale layer deposition application using imaging techniques to ensure the atomic layer deposition (ALD) process is occurring smoothly and producing a conformal layer over a surface; computers and computer programmes for atomic scale layer deposition apparatus. (1) Treatment and coating of materials, namely, oxides, nitrides, carbides, to ternary compounds, metals (including noble ones), hybrid materials and polymers, and nanolaminates by atomic scale layer deposition method and consulting connected thereto.
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Machines and machine tools for atomic scale layer deposition; atomic scale layer deposition apparatus. Data processing equipment; computers and computer programmes for atomic scale layer deposition apparatus. Treatment and coating of materials by atomic scale layer deposition method and consulting connected thereto.
40 - Treatment of materials; recycling, air and water treatment,
07 - Machines and machine tools
09 - Scientific and electric apparatus and instruments
Goods & Services
Treatment and coating of materials by means of the atomic scale layer deposition method and consulting connected thereto Machines and machine tools for atomic scale layer deposition; atomic scale layer deposition machines for manufacturing medical devices Data processing equipment; computers and computer programmes for controlling and monitoring atomic scale layer deposition machines
86.
DEPOSITION OR CLEANING APPARATUS WITH MOVABLE STRUCTURE AND METHOD OF OPERATION
A deposition or cleaning apparatus comprising an outer vacuum chamber and a reaction chamber inside the outer chamber forming a double chamber structure. The reaction chamber is configured to move between a processing position and a lowered position inside the outer vacuum chamber, the lowered position being for loading one or more substrates into the reaction chamber.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A system and method for atomic layer deposition, ALD, where an actuator arrangement is configured to receive a batch of substrates and transfer the substrates through a first load-lock (220) horizontally into a vacuum chamber (310), and to lower the substrates within the vacuum chamber (310) into a reaction chamber (420) thus closing the reaction chamber with a lid (410).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
An atomic layer deposition (ALD) method in an ALD reactor (100) including a reaction chamber (10) housing a substrate vessel (30), and an isolated vibration source (70-72) outside of the reaction chamber (10) or isolated within the reaction chamber (610). Particulate material within the substrate vessel (30) is coated by self-saturating surface reactions using a top-to-bottom precursor flow passing through the substrate vessel (30), and movements are caused in the particulate material within the substrate vessel (30) by the isolated vibration source (70-72) while coating the particulate material.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Machines and machine tools for atomic scale layer
deposition; atomic scale layer deposition apparatus. Data processing equipment; computers and computer programmes
for atomic scale layer deposition apparatus. Treatment and coating of materials by atomic scale layer
deposition method and consulting connected thereto.
92.
ALD method and apparatus including a photon source
A deposition method, including providing a channel through a deposition apparatus, feeding precursor vapor into the channel, and depositing material from the precursor vapor onto a substrate on its way through the deposition apparatus by exposing the substrate to the precursor vapor and to alternating photon exposure and shade periods within the channel.
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
A deposition method to reduce metal whisker formation, electromigration and corrosion is provided comprising providing a substrate and pretreating the substrate by cleaning. The substrate is also pretreated by preheating and/or evacuating. Finally, on the substrate a stack is deposited by ALD (atomic layer deposition). Also is provided an ALD reactor with control means for carrying out the method, and products obtained using the deposition method.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
(1) Atomic scale layer deposition machinery and machine tools for use in connection therewith; thin film deposition reactors for use in the field of atomic layer deposition (ALD)
(2) Data processing equipment, namely, programmable logic controllers for use with atomic scale layer deposition machinery; computers and computer programmes for use in the operation of atomic scale layer deposition machinery (1) Treatment and coating of substrates by atomic scale layer deposition method and consulting connected thereto
40 - Treatment of materials; recycling, air and water treatment,
07 - Machines and machine tools
09 - Scientific and electric apparatus and instruments
Goods & Services
Treatment and coating of materials by atomic scale layer deposition method and consulting connected thereto Machines and machine tools for atomic scale layer deposition; atomic scale layer deposition machines Data processing equipment; computers and computer programmes for controlling and monitoring atomic scale layer deposition apparatus
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Machines and machine tools for atomic scale layer
deposition; atomic scale layer deposition apparatus. Data processing equipment; computers and computer programmes
for atomic scale layer deposition apparatus. Treatment and coating of materials by atomic scale layer
deposition method and consulting connected thereto.
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Machines and machine tools for atomic scale layer deposition; atomic scale layer deposition apparatus. Data processing equipment; computers and computer programmes for atomic scale layer deposition apparatus. Treatment and coating of materials by atomic scale layer deposition method and consulting connected thereto.
98.
Protecting an interior of a hollow body with an ALD coating
An apparatus and method for protecting an interior of a hollow body, where an inlet and exhaust manifold include a port assembly attachable to an opening of the hollow body is provided. The interior of the hollow body is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases via the port assembly and the opening into the interior of the hollow body, and excess gases is pumped via the opening and the port assembly out from the hollow body.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
99.
Protecting an interior of a gas container with an ALD coating
An apparatus and method for protecting a gas container interior, where an inlet and exhaust manifold include a port assembly attachable to a port of the gas container is provided, the gas container interior is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases via the port assembly and the port into the gas container interior, and reaction residue is pumped via the port and the port assembly out from the gas container.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
B05D 7/22 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to internal surfaces, e.g. of tubes
C23C 14/04 - Coating on selected surface areas, e.g. using masks
F17C 1/10 - Pressure vessels, e.g. gas cylinder, gas tank, replaceable cartridge with provision for protection against corrosion, e.g. due to gaseous acid
