Shin-Etsu Chemical Co., Ltd.

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[Owner] Shin-Etsu Chemical Co., Ltd. 5,587
Shin-Etsu Handotai Co., Ltd. 1,287
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G03F 7/004 - Photosensitive materials 555
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01 - Chemical and biological materials for industrial, scientific and agricultural use 118
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1.

GLASS CLOTH TREATMENT LIQUID AND SURFACE TREATED GLASS CLOTH

      
Application Number 18862010
Status Pending
Filing Date 2023-04-28
First Publication Date 2025-06-05
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Yasuda, Shigeki
  • Itokawa, Hajime

Abstract

Provided is a glass cloth treatment liquid in which 0.05-2.0 mass % of a methacrylamide group-containing organosilicon compound represented by formula (1) is dissolved in water, wherein the content of a dimethacrylamide group-containing organosilicon compound represented by formula (2) is less than 1 mass part per 100 mass parts of the methacrylamide group-containing organosilicon compound represented by formula (1). Provided is a glass cloth treatment liquid in which 0.05-2.0 mass % of a methacrylamide group-containing organosilicon compound represented by formula (1) is dissolved in water, wherein the content of a dimethacrylamide group-containing organosilicon compound represented by formula (2) is less than 1 mass part per 100 mass parts of the methacrylamide group-containing organosilicon compound represented by formula (1). Provided is a glass cloth treatment liquid in which 0.05-2.0 mass % of a methacrylamide group-containing organosilicon compound represented by formula (1) is dissolved in water, wherein the content of a dimethacrylamide group-containing organosilicon compound represented by formula (2) is less than 1 mass part per 100 mass parts of the methacrylamide group-containing organosilicon compound represented by formula (1). (In the formulae, R1 each independently represents a C1-C10 alkyl group or a C6-C10 aryl group, Me represents a methyl group, m1 and m2 represent an integer of 1-3, and n1 and n2 represent an integer of 1-12.)

IPC Classes  ?

  • C03C 25/1095 - Coating to obtain coated fabrics
  • C03C 25/40 - Organo-silicon compounds
  • D06M 13/513 - Compounds with at least one carbon-metal or carbon-boron, carbon-silicon, carbon-selenium, or carbon-tellurium bond with at least one carbon-silicon bond
  • H05K 1/03 - Use of materials for the substrate
  • H05K 3/00 - Apparatus or processes for manufacturing printed circuits

2.

ELECTRODE DEVICE AND MANUFACTURING METHOD THEREFOR

      
Application Number JP2024041639
Publication Number 2025/115807
Status In Force
Filing Date 2024-11-25
Publication Date 2025-06-05
Owner SHIN-ETSU QUARTZ PRODUCTS CO., LTD. (Japan)
Inventor Ishihara Yu

Abstract

The present invention is an electrode device comprising a support that joins to and holds a graphite electrode used for arc discharge for manufacturing a quartz crucible, the electrode device being characterized by having an antifouling thin film on, from among the surfaces of the support, the outermost surface layer of the portion adjacent to the graphite electrode when the support is joined to the graphite electrode. As a result of this configuration, the present invention provides an electrode device with which it is possible to suppress contamination from a support, and to shorten the graphite electrode used and thereby reduce manufacturing costs.

IPC Classes  ?

3.

COMPOSITION COMPRISING METHACRYLAMIDE GROUP-CONTAINING ORGANIC SILICON COMPOUND AND ARTICLE SURFACE-TREATED WITH SAID COMPOSITION

      
Application Number 18843829
Status Pending
Filing Date 2023-02-13
First Publication Date 2025-06-05
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Yasuda, Shigeki
  • Hirokami, Munenao

Abstract

Provided is a composition comprising a methacrylamide group-containing organic silicon compound represented by formula (1) and an organic silicon compound represented by formula (2). Provided is a composition comprising a methacrylamide group-containing organic silicon compound represented by formula (1) and an organic silicon compound represented by formula (2). Provided is a composition comprising a methacrylamide group-containing organic silicon compound represented by formula (1) and an organic silicon compound represented by formula (2). (In the formulae, each R1 independently represents a C1-10 alkyl group or a C6-10 aryl group, R2 represents a methyl group or an ethyl group, Me represents a methyl group, m1 and m2 represent an integer of 1-3, and n1 and n2 represent an integer of 1-12.)

IPC Classes  ?

  • C08G 77/26 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen nitrogen-containing groups
  • C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
  • C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
  • C09D 183/08 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen

4.

HYDROCARBON END GROUP-CONTAINING COMPOUND, CURABLE COMPOSITION FOR FORMING COATING FILM, CURED COATING FILM, AND ARTICLE

      
Application Number JP2024040075
Publication Number 2025/115584
Status In Force
Filing Date 2024-11-12
Publication Date 2025-06-05
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Mori Seiya
  • Sakano Yasunori
  • Sakoh Ryusuke

Abstract

According to the present invention, by adding a hydrocarbon end group-containing compound which is represented by formula (1) and does not contain a fluorine atom in the structure to a thermosetting composition or a composition that is curable by an active energy ray such as an ultraviolet ray or an electron beam, excellent water repellency, antifouling properties and wear resistance can be imparted to a cured coating film produced from the composition. (X represents R1O- or R2R3N-, R1represents a monovalent hydrocarbon group having 20 to 80 carbon atoms, R2represents a monovalent hydrocarbon group having 10 to 40 carbon atoms, R3represents H or R2, the total number of carbon atoms in R2and R3is 20 to 80, Y represents a single bond or the following group *-C(=O)-***-C(=O)-O-***-C(=O)-NR4-***-C(=S)-NR4-**(wherein * denotes an atomic bond with X, ** denotes an atomic bond with Z, and R4 represents H or a monovalent hydrocarbon group), Z represents a single bond or a hydrocarbon group which has a valence of 2 to 4 and may contain O, S, N, and Si, V represents a polymerizable carbon-carbon double bond-containing monovalent hydrocarbon group which may contain O and N, and m represents a number of 1 to 3.)

IPC Classes  ?

  • C08F 20/10 - Esters
  • C07C 69/54 - Acrylic acid estersMethacrylic acid esters
  • C07C 233/09 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having nitrogen atoms of carboxamide groups bound to hydrogen atoms or to carbon atoms of unsubstituted hydrocarbon radicals with carbon atoms of carboxamide groups bound to carbon atoms of an acyclic unsaturated carbon skeleton
  • C07C 271/16 - Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of hydrocarbon radicals substituted by singly-bound oxygen atoms
  • C07C 275/10 - Derivatives of urea, i.e. compounds containing any of the groups the nitrogen atoms not being part of nitro or nitroso groups having nitrogen atoms of urea groups bound to acyclic carbon atoms of an acyclic and saturated carbon skeleton being further substituted by singly-bound oxygen atoms
  • C08F 20/54 - Amides
  • C09D 4/02 - Acrylmonomers
  • C09K 3/18 - Materials not provided for elsewhere for application to surface to minimize adherence of ice, mist or water theretoThawing or antifreeze materials for application to surfaces

5.

DISPERSING AGENT, DISPERSION AND INK COMPOSITIONS, AND METHODS FOR PRODUCING SAME

      
Application Number JP2024039965
Publication Number 2025/115573
Status In Force
Filing Date 2024-11-11
Publication Date 2025-06-05
Owner NISSIN CHEMICAL INDUSTRY CO., LTD. (Japan)
Inventor
  • Kobayashi Fumika
  • Kawabata Seigo
  • Nishikawa Tomoyuki

Abstract

The present invention provides: a dispersing agent characterized by including a copolymer which is (A) a copolymer based on styrene-ethyleneoxy-group-containing (meth)acrylic acid and having a weight-average molecular weight of 1,000-50,000 and has (a1) a styrene content of 1-40 mass%, and by having a surfactant content less than 0.1 mass%; dispersion and ink compositions; and methods for producing the dispersing agent, the dispersion and the ink compositions. Even when added in a small amount, the present invention can disperse dispersing dyes and pigments and can also sufficiently exhibit wetting properties and re-dispersing properties.

IPC Classes  ?

6.

COATING COMPOSITION AND COATED ARTICLE

      
Application Number JP2024041913
Publication Number 2025/115885
Status In Force
Filing Date 2024-11-27
Publication Date 2025-06-05
Owner
  • SHIN-ETSU CHEMICAL CO., LTD. (Japan)
  • TAISEI CORPORATION (Japan)
  • DAI NIPPON TORYO CO., LTD. (Japan)
Inventor
  • Yoshii Ryosuke
  • Morimoto Yukio
  • Higuchi Koichi
  • Wakayama Yoshihide
  • Umemori Hiroshi
  • Sakurada Masashi
  • Obata Yusuke

Abstract

Provided is a coating composition including (i) an organopolysiloxane composed of the ratio of units represented in formula (1): (R131/2aa(R22bb(R313/2c2dd(OR4ee (where R1-R3represent alkyl groups or the like that may be substituted with a hydrogen atom, one or more hydroxy groups, or the like, and that may have an ether bond, with at least a portion of the same being an alkyl group or the like that is substituted with a hydroxy group and that may have an ether bond, R4 represents a hydrogen atom or an alkyl group, and a is 0-0.5, b is 0-0.5, c is 0.2-1.0, d is 0-0.5, e is 0-3.0, and a+b+c+d=1 is satisfied), and (ii) an inorganic filler.

IPC Classes  ?

7.

THERMOSETTING SILICONE COMPOSITION, DIE BONDING MATERIAL, AND OPTICAL SEMICONDUCTOR DEVICE

      
Application Number JP2024034742
Publication Number 2025/109868
Status In Force
Filing Date 2024-09-27
Publication Date 2025-05-30
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Ikeya Minako
  • Hirano Daisuke
  • Kobayashi Yukito
  • Ozai Toshiyuki

Abstract

The present invention is a thermosetting silicone composition characterized by containing the following components (A)-(D): (A) an organopolysiloxane having an average constituent unit ratio represented by formula (1), (R131/2aa(R23-n3-nR3n1/2bb(R122/2cc(R13/2d4/2ee …(1), (B) an organic peroxide, (C) an organohydrogenpolysiloxane having two or more hydrogen atoms bonded to silicon atoms per molecule, and (D) a platinum group metal catalyst. As a result, provided are: a thermosetting silicone composition that provides a cured product having excellent hardness and die shear strength; a die bonding material comprising said composition; and an optical semiconductor device in which an optical semiconductor element is die-bonded with a cured product of said die bonding material.

IPC Classes  ?

  • C08L 83/07 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups
  • C08K 5/14 - Peroxides
  • C08L 83/05 - Polysiloxanes containing silicon bound to hydrogen
  • C09J 11/06 - Non-macromolecular additives organic
  • C09J 183/05 - Polysiloxanes containing silicon bound to hydrogen
  • C09J 183/07 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups
  • H01L 21/52 - Mounting semiconductor bodies in containers

8.

MOLDED PRODUCT CONTAINING INORGANIC PARTICLES AND WATER SOLUBLE POLYSILOXANE COMPOUND HAVING AMINO GROUP, METHOD FOR PRODUCING SAME, AND INORGANIC PARTICLE DISPERSION LIQUID

      
Application Number JP2024038086
Publication Number 2025/109942
Status In Force
Filing Date 2024-10-25
Publication Date 2025-05-30
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Nakazawa Koichi
  • Honma Takayuki
  • Kiyomori Ayumu

Abstract

This molded product (not comprising an organic titanate or an organic zirconate) comprising inorganic particles and a water soluble polysiloxane compound which has an amino group and which is represented by formula (1) makes it possible to reducing a storage volume and can be redispersed in a dispersion medium to be used in the form of a dispersion liquid. [R1represents a hydrogen atom, a C1-20 substituted or unsubstituted monovalent hydrocarbon group, or a monovalent hydrocarbon group which has a carboxy group represented by general formula (2) below (where R3, R4, and R5each independently represent a hydrogen atom or a C1-20 substituted or unsubstituted monovalent hydrocarbon group, and a represents 0 or 1), R2 represents a C1-20 substituted or unsubstituted monovalent hydrocarbon group, m is 0 or a positive number less than 3, n is 0 or 1, and n+m is 0 or a positive number less than 3.]

IPC Classes  ?

  • C08L 83/08 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
  • C08K 3/013 - Fillers, pigments or reinforcing additives

9.

SOLID WATER-SOLUBLE POLYSILOXANE COMPOUND HAVING AMINO ACID-CONTAINING GROUP, AND METHOD FOR PRODUCING SAME

      
Application Number JP2024038087
Publication Number 2025/109943
Status In Force
Filing Date 2024-10-25
Publication Date 2025-05-30
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Nakazawa Koichi
  • Kiyomori Ayumu

Abstract

This solid water-soluble polysiloxane compound having an amino acid-containing group and represented by general formula (1) has a solid form, and therefore can be reduced in cost for storage and transportation, and can be easily re-dissolved to prepare a solution upon use. (In the formula, R1, R2, and R3each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; R4 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; a is 0 or 1; m is 0 or a positive number less than 3; n is 0 or 1; and n + m is 0 or a positive number less than 3.)

IPC Classes  ?

  • C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
  • C08G 77/26 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen nitrogen-containing groups

10.

NEGATIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR MANUFACTURING SAME

      
Application Number JP2024040914
Publication Number 2025/110143
Status In Force
Filing Date 2024-11-19
Publication Date 2025-05-30
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Hirose Takakazu
  • Takahashi Kohta
  • Osawa Yusuke
  • Ishikawa Takuya
  • Koide Hiroyuki
  • Sakai Reiko

Abstract

The present invention provides a negative electrode active material that has negative electrode active material particles, the negative electrode active material being characterized in that: the negative electrode active material particles include a structure of porous carbon; amorphous low-valence nano silicon oxide is dispersed inside the structure of the porous carbon; and, when the negative electrode active material particles are measured by solid29 Si-CP/MAS-NMR, the maximum value is within the range of −81 to −95 ppm. Due to this configuration, it is possible to provide a negative electrode active material that can increase capacity while maintaining battery characteristics.

IPC Classes  ?

  • H01M 4/48 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
  • C01B 32/05 - Preparation or purification of carbon not covered by groups , , ,
  • C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
  • C01B 33/113 - Silicon oxidesHydrates thereof
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids

11.

THERMAL CONDUCTIVE ADDITION-CURABLE SILICONE COMPOSITION AND CURED PRODUCT THEREOF

      
Application Number 18727511
Status Pending
Filing Date 2023-01-12
First Publication Date 2025-05-29
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Kitazawa, Keita
  • Ikeno, Masayuki
  • Hasegawa, Koji
  • Nonaka, Shiori

Abstract

A thermal conductive addition-curable silicone composition includes: an organopolysiloxane (A) having at least one aliphatic unsaturated hydrocarbon group in one molecule and having a kinematic viscosity at 25° C. of 60 to 100,000 mm2/s; a phenol compound (B) at an amount of 0.01 to 10 mass % relative to an entirety of the composition; a silver powder (C) at an amount of 10 to 98 mass % relative to the entirety of the composition; an organohydrogenpolysiloxane (D) having two or more hydrogen atoms bonded to a silicon atom in one molecule at an effective amount sufficient for the composition to form a cured product; and a platinum-group metal catalyst (E) at an effective amount. This configuration provides a thermal conductive addition-curable silicone composition having excellent heat-dissipating ability.

IPC Classes  ?

  • C09K 5/14 - Solid materials, e.g. powdery or granular
  • C08G 77/08 - Preparatory processes characterised by the catalysts used
  • C08G 77/12 - Polysiloxanes containing silicon bound to hydrogen
  • C08G 77/20 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups
  • C08K 3/08 - Metals
  • C08K 5/136 - Phenols containing halogens
  • C08K 5/5425 - Silicon-containing compounds containing oxygen containing at least one C=C bond
  • C09J 5/06 - Adhesive processes in generalAdhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
  • C09J 9/00 - Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
  • C09J 11/04 - Non-macromolecular additives inorganic
  • C09J 11/06 - Non-macromolecular additives organic
  • C09J 183/04 - Polysiloxanes

12.

HYDROXYL GROUP-CONTAINING ORGANOSILICON COMPOUND

      
Application Number 18841154
Status Pending
Filing Date 2023-02-17
First Publication Date 2025-05-29
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Sakuta, Koji
  • Ando, Yuji
  • Meguriya, Noriyuki

Abstract

Provided is a hydroxyl group-containing organosilicon compound represented by general formula (1). Provided is a hydroxyl group-containing organosilicon compound represented by general formula (1). (R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r   (1) Provided is a hydroxyl group-containing organosilicon compound represented by general formula (1). (R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r   (1) [In formula (1), R1 is a group selected from a monovalent hydrocarbon group and a group represented by formula (2), provided that at least one of all R1 groups is a group represented by formula (2). k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.] Provided is a hydroxyl group-containing organosilicon compound represented by general formula (1). (R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r   (1) [In formula (1), R1 is a group selected from a monovalent hydrocarbon group and a group represented by formula (2), provided that at least one of all R1 groups is a group represented by formula (2). k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.] Provided is a hydroxyl group-containing organosilicon compound represented by general formula (1). (R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r   (1) [In formula (1), R1 is a group selected from a monovalent hydrocarbon group and a group represented by formula (2), provided that at least one of all R1 groups is a group represented by formula (2). k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.] (In formula (2), R2 is a hydrogen atom or a group selected from a monovalent hydrocarbon group and an alkoxy group, and R3 is a hydrogen atom or a methyl group. s is an integer of 0-4, t is an integer of 2-4 and u is a numerical value of 1-3. The broken line represents a bond.)

IPC Classes  ?

  • C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages

13.

REFLECTIVE MASK BLANK AND MANUFACTURING METHOD THEREOF

      
Application Number 18944867
Status Pending
Filing Date 2024-11-12
First Publication Date 2025-05-29
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Ogose, Taiga
  • Kaneko, Hideo
  • Inazuki, Yukio
  • Kosaka, Takuro

Abstract

A reflective mask blank including a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects exposure light is provided. The multilayer reflection film has a periodically laminated structure in which repeating units are multiply stacked, the repeating unit includes one each of a high refractive index layer, a low refractive index layer, and a medium refractive index layer having a refractive index lower than a refractive index of the high refractive index layer and higher than a refractive index of the low refractive index layer, and in the repeating unit, the high refractive index layer and the medium refractive index layer are disposed at the substrate side and the side remote from the substrate, respectively, with respect to the low refractive index layer.

IPC Classes  ?

  • G03F 1/24 - Reflection masksPreparation thereof

14.

POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS

      
Application Number 18945641
Status Pending
Filing Date 2024-11-13
First Publication Date 2025-05-29
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Fukushima, Masahiro
  • Hatakeyama, Jun
  • Ohashi, Masaki
  • Yamahira, Tatsuya

Abstract

A polymer is defined as comprising repeat units having a cyclic acetal structure fused to an aromatic ring and repeat units derived from an onium salt compound containing a fluorosulfonic acid anion having a polymerizable group and an iodized aromatic ring structure. A chemically amplified resist composition comprising the polymer has advantages including high sensitivity, high contrast, improved lithography properties, e.g., EL, LWR, CDU and DOF, collapse resistance during fine pattern formation, and etch resistance after development.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 216/10 - Carbocyclic compounds
  • C08F 220/04 - AcidsMetals salts or ammonium salts thereof
  • C08F 220/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
  • C08F 234/02 - Copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain and having one or more carbon-to-carbon double bonds in a heterocyclic ring in a ring containing oxygen
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

15.

TWO-COMPONENT THERMALLY-CONDUCTIVE ADDITION-CURABLE SILICONE COMPOSITION AND CURED PRODUCT THEREOF

      
Application Number 18844334
Status Pending
Filing Date 2023-02-21
First Publication Date 2025-05-29
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Tabata, Yuji
  • Iwata, Mitsuhiro

Abstract

A two-component thermally-conductive addition-curable silicone constituted of a first component and a second component, wherein, the first component contains: (A) an organopolysiloxane having an alkenyl group bonded to a silicon atom, (C) a thermally-conductive filler, and (E) a platinum group metal catalyst; and the second component contains: (A) an organopolysiloxane having an alkenyl group bonded to a silicon atom, (B) an organohydrogenpolysiloxane, and (C) a thermally-conductive filler. A two-component thermally-conductive addition-curable silicone constituted of a first component and a second component, wherein, the first component contains: (A) an organopolysiloxane having an alkenyl group bonded to a silicon atom, (C) a thermally-conductive filler, and (E) a platinum group metal catalyst; and the second component contains: (A) an organopolysiloxane having an alkenyl group bonded to a silicon atom, (B) an organohydrogenpolysiloxane, and (C) a thermally-conductive filler. The first component does not contain component (B), the second component does not contain component (E) and one or both of the first and second components contains (D) a complex of a metal and a 8-quinolinol.

IPC Classes  ?

  • C08L 83/04 - Polysiloxanes
  • C08G 77/08 - Preparatory processes characterised by the catalysts used
  • C08G 77/44 - Block- or graft-polymers containing polysiloxane sequences containing only polysiloxane sequences
  • C08J 5/18 - Manufacture of films or sheets
  • C08K 3/22 - OxidesHydroxides of metals
  • C08K 3/28 - Nitrogen-containing compounds
  • C08K 5/00 - Use of organic ingredients
  • C08K 5/5419 - Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
  • C08K 7/18 - Solid spheres inorganic

16.

PREPARING METHOD OF RARE EARTH COMPOSITE OXIDE PARTICLES

      
Application Number 18939696
Status Pending
Filing Date 2024-11-07
First Publication Date 2025-05-29
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor Suzuki, Hironori

Abstract

A rare earth composite oxide particles is prepared by a method including the steps of (A) producing particles of rare earth composite compound by heating an aqueous solution that contains ions of at least one kind of rare earth element selected from the group consisting of Sc, Y, Nd, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, either or both of Al ions and Ga ions, an organic compound having a carboxy group, and urea at not less than 80° C. and not more than a boiling point of the aqueous solution to react the organic compound, a hydrolyzed product of the urea, the ions of the rare earth element, and the either or both of Al ions and Ga ions, and (B) producing rare earth composite oxide from the rare earth composite compound.

IPC Classes  ?

  • C01F 17/34 - Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
  • C01G 15/00 - Compounds of gallium, indium, or thallium

17.

POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18947125
Status Pending
Filing Date 2024-11-14
First Publication Date 2025-05-29
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Hatakeyama, Jun
  • Fukushima, Masahiro

Abstract

A positive resist composition is provided comprising a polymer comprising an aromatic hydroxy acid having a carboxy group and a phenolic hydroxy group which are both substituted with an acid labile group having an aromatic group-containing cyclic acetal structure. It exhibits a high sensitivity and resolution and forms a pattern of satisfactory profile with reduced LWR or improved CDU.

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/004 - Photosensitive materials

18.

POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18933372
Status Pending
Filing Date 2024-10-31
First Publication Date 2025-05-22
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor Hatakeyama, Jun

Abstract

The positive resist composition comprises a base polymer comprising repeat units (a) having a sulfonium salt structure of an iodized phenol compound. The positive resist composition comprising a base polymer comprising repeat units having a sulfonium salt structure of an iodized phenol exhibits a high sensitivity and resolution, and forms a pattern of satisfactory profile with reduced edge roughness and dimensional variation.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

19.

Patterning Process

      
Application Number 18949532
Status Pending
Filing Date 2024-11-15
First Publication Date 2025-05-22
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Kobayashi, Naoki
  • Takizawa, Kanata
  • Mitsui, Ryo
  • Kori, Daisuke

Abstract

The present invention is a patterning process including the steps of: providing an organic underlayer film, a silicon-containing hard mask, a silicon-containing antireflective film, and a photoresist film in this order on a substrate to be processed; forming a resist pattern in the photoresist film; forming a hard mask middle layer film pattern; forming an organic underlayer film pattern; and forming a pattern in the substrate to be processed, where the silicon-containing antireflective film is formed using a composition for forming a silicon-containing antireflective film containing a crosslinking agent and a polysiloxane containing any one or more of a repeating unit represented by the following general formula (Sx-1), a repeating unit represented by the following general formula (Sx-2), and a partial structure represented by the following general formula (Sx-3). This provides a patterning process according to which it is possible to form a fine pattern without edge roughness. The present invention is a patterning process including the steps of: providing an organic underlayer film, a silicon-containing hard mask, a silicon-containing antireflective film, and a photoresist film in this order on a substrate to be processed; forming a resist pattern in the photoresist film; forming a hard mask middle layer film pattern; forming an organic underlayer film pattern; and forming a pattern in the substrate to be processed, where the silicon-containing antireflective film is formed using a composition for forming a silicon-containing antireflective film containing a crosslinking agent and a polysiloxane containing any one or more of a repeating unit represented by the following general formula (Sx-1), a repeating unit represented by the following general formula (Sx-2), and a partial structure represented by the following general formula (Sx-3). This provides a patterning process according to which it is possible to form a fine pattern without edge roughness.

IPC Classes  ?

  • H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks

20.

METHOD FOR PRODUCING HETEROEPITAXIAL FILM

      
Application Number 18695073
Status Pending
Filing Date 2022-08-25
First Publication Date 2025-05-22
Owner SHIN-ETSU HANDOTAI CO., LTD. (Japan)
Inventor
  • Ohtsuki, Tsuyoshi
  • Hagimoto, Kazunori
  • Ishizaki, Junya
  • Abe, Tatsuo
  • Suzuki, Atsushi
  • Matsubara, Toshiki

Abstract

A method for efficiently producing a heteroepitaxial film in a thin film shape while minimizing damage to a device and material loss, including heteroepitaxial growing a 3C—SiC single crystal film on a single crystal Si substrate and then delaminating thereof, the method includes: with using a reduced-pressure CVD apparatus, removing a native oxide film on a surface of the single crystal Si substrate by hydrogen baking, performing nucleation of SiC at 1333 Pa or lower and 300° C. or higher and 950° C. or lower and forming the 3C—SiC single crystal film and forming a vacancy directly under the 3C—SiC single crystal film at 1333 Pa or lower and 800° C. or higher and lower than 1200° C., while supplying a source gas containing carbon and silicon; and producing the heteroepitaxial film by delaminating the 3C—SiC single crystal film along the vacancy.

IPC Classes  ?

  • C30B 25/16 - Controlling or regulating
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate
  • C30B 29/06 - Silicon
  • C30B 29/36 - Carbides
  • C30B 29/40 - AIIIBV compounds
  • C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"
  • C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

21.

METHOD FOR MANUFACTURING BONDED SEMICONDUCTOR WAFER

      
Application Number 18696117
Status Pending
Filing Date 2022-10-13
First Publication Date 2025-05-22
Owner SHIN-ETSU HANDOTAI CO., LTD. (Japan)
Inventor Ishizaki, Junya

Abstract

The present invention provides a method for manufacturing a bonded semiconductor wafer, the method includes the steps of epitaxially growing an etching stop layer on a starting substrate, epitaxially growing a compound semiconductor functional layer on the etching stop layer, forming an isolation groove for forming a device in the compound semiconductor functional layer by a dry etching method, etching on a surface of the isolation groove by a wet etching method, bonding a visible light-transmissive substrate of a different material from a material of the compound semiconductor functional layer to the compound semiconductor functional layer via a visible light-transmissive thermosetting bonding member, and obtaining a bonded semiconductor wafer by removing the starting substrate from the compound semiconductor functional layer bonded to the visible light-transmissive substrate. This can provide a method for manufacturing a bonded semiconductor wafer that can make a device with suppressed generation of decrease in brightness when the device is produced on a substrate.

IPC Classes  ?

22.

INSULATING HEAT TRANSFER SHEET

      
Application Number JP2024032707
Publication Number 2025/105032
Status In Force
Filing Date 2024-09-12
Publication Date 2025-05-22
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Tsukada Junichi

Abstract

The present invention provides an insulating heat transfer sheet which is characterized by being a cured product of a thermally conductive silicone resin composition that contains the components (A) to (D) described below, the insulating heat transfer sheet being characterized in that the peak intensity ratio (degree of orientation) in a thickness direction as detected by X-ray diffraction method of the insulating heat transfer sheet is [2θ = 41 to 43°]/[2θ = 25 to 27°] = 1 or more: (A) an organopolysiloxane which has two or more alkenyl groups in each molecule, the alkenyl groups being each bonded to a silicon atom, (B) an organohydrogenpolysiloxane which contains a component (B1) and a component (B2), and has two or more hydrosilyl groups in each molecule, (C) a hydrosilylation catalyst, (D) a flat boron nitride which has an average particle diameter of 30 to 100 μm and an aspect ratio of 20 to 100 as measured by a laser diffraction method. Consequently, the present invention provides an insulating heat transfer sheet which has high sheet strength while having excellent thermal conductivity in the thickness direction.

IPC Classes  ?

  • H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
  • C08J 5/18 - Manufacture of films or sheets
  • C08L 83/05 - Polysiloxanes containing silicon bound to hydrogen
  • C08L 83/07 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups
  • H01L 23/373 - Cooling facilitated by selection of materials for the device
  • H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating

23.

LIGHT GUIDE MEMBER

      
Application Number JP2024039401
Publication Number 2025/105255
Status In Force
Filing Date 2024-11-06
Publication Date 2025-05-22
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Kato, Koji

Abstract

The present invention is a light guide member for use in a waveguide structure for an image display device that guides image light entering from a display and emits the image light toward the eyes of a user, and the present invention is characterized in that light guide member is formed from a single crystal composed of lithium niobate. According to the present invention, it is possible to provide a light guide member having a high refractive index and a high internal transmittance.

IPC Classes  ?

  • G02B 27/02 - Viewing or reading apparatus
  • G02B 6/00 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings

24.

SILOXANE-MODIFIED POLYURETHANE COMPOSITION

      
Application Number 18841272
Status Pending
Filing Date 2023-02-17
First Publication Date 2025-05-22
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Sakuta, Koji
  • Ando, Yuji
  • Meguriya, Noriyuki

Abstract

Provided is a siloxane-modified polyurethane composition that contains: (A) a hydroxyl group-containing organosilicon compound represented by formula (1). Provided is a siloxane-modified polyurethane composition that contains: (A) a hydroxyl group-containing organosilicon compound represented by formula (1). (R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r  (1) Provided is a siloxane-modified polyurethane composition that contains: (A) a hydroxyl group-containing organosilicon compound represented by formula (1). (R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r  (1) [wherein: R1 is a monovalent hydrocarbon group, etc., provided that at least one of all R1 groups is a group represented by formula (2); and k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.] Provided is a siloxane-modified polyurethane composition that contains: (A) a hydroxyl group-containing organosilicon compound represented by formula (1). (R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r  (1) [wherein: R1 is a monovalent hydrocarbon group, etc., provided that at least one of all R1 groups is a group represented by formula (2); and k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.] Provided is a siloxane-modified polyurethane composition that contains: (A) a hydroxyl group-containing organosilicon compound represented by formula (1). (R13SiO1/2)k(R12SiO2/2)p(R1SiO3/2)q(SiO4/2)r  (1) [wherein: R1 is a monovalent hydrocarbon group, etc., provided that at least one of all R1 groups is a group represented by formula (2); and k>0, p≥0, q≥0 and r≥0, provided that k+p+q≥2.] (R2 is a hydrogen atom, etc., and R3 is a hydrogen atom or a methyl group; s is an integer of 0-4, t is an integer of 2-4 and u is a numerical value of 1-3; and the broken line represents a bond); (B) an isocyanate compound having two or more isocyanate groups per molecule; and (C) an organic compound having two or more functional groups capable of reacting with isocyanate groups per molecule.

IPC Classes  ?

  • C08G 18/61 - Polysiloxanes
  • C08G 77/16 - Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxy groups

25.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18933529
Status Pending
Filing Date 2024-10-31
First Publication Date 2025-05-22
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Hatakeyama, Jun
  • Ohashi, Masaki

Abstract

The resist composition comprises a sulfonium salt of an iodized phenol compound. The resist composition which comprises a sulfonium salt of an iodized phenol compound can exhibit a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.

IPC Classes  ?

  • G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

26.

CARBON BLACK DISPERSED COMPOSITION FOR BATTERIES, POSITIVE ELECTRODE-FORMING MIX PASTE, LITHIUM-ION SECONDARY BATTERY-FORMING POSITIVE ELECTRODE, AND LITHIUM-ION SECONDARY BATTERY

      
Application Number 18954650
Status Pending
Filing Date 2024-11-21
First Publication Date 2025-05-22
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Komatsuki, Keiichi
  • Niinobe, Shingo
  • Kitamura, Akira

Abstract

In a carbon black dispersed composition comprising carbon black, methyl cellulose, and N-methyl-2-pyrrolidone, the methyl cellulose has a polydispersity index of up to 1.9 based on absolute molecular weight measurement by SEC-MALS and a 2 wt % aqueous solution viscosity of 3 to 30 mPa·s at 20° C. The composition having carbon black uniformly dispersed and maintaining the initial dispersion state, i.e., having storage stability is obtained without excessive labor and/or time.

IPC Classes  ?

  • C08K 3/04 - Carbon
  • H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
  • H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries

27.

ULTRAVIOLET-CURABLE SILICONE GEL COMPOSITION, AND SILICONE GEL CURED PRODUCT OBTAINED BY CURING SAID COMPOSITION

      
Application Number JP2024036949
Publication Number 2025/105104
Status In Force
Filing Date 2024-10-17
Publication Date 2025-05-22
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Yasuda Hiroyuki
  • Hara Hiroyasu

Abstract

The present invention pertains to an ultraviolet-curable silicone gel composition containing components (A)-(D): (A) 5-95 parts by mass of an organopolysiloxane compound having two or more alkenyl groups per molecule; (B) 5-95 parts by mass of an organopolysiloxane compound represented by average formula (1) (R111R221/2aa(R231/22-a2-a(R22bb; (C) an organohydrogen polysiloxane having three or more hydrosilyl groups per molecule; and (D) a hydrosilylation reaction catalyst in a catalytic amount. Thus, the present invention provides: an ultraviolet-curable silicone gel composition which, after being cured, has excellent heat resistance, etc., exhibits a stable loss coefficient tanδ in a wide frequency range, and can be suitably used for improving the reliability of vibration-damping performance; a silicone gel cured product obtained by curing the composition; and a vibration-damping material using the cured product.

IPC Classes  ?

  • C08L 83/07 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups
  • C08L 83/05 - Polysiloxanes containing silicon bound to hydrogen
  • F16F 15/02 - Suppression of vibrations of non-rotating, e.g. reciprocating, systemsSuppression of vibrations of rotating systems by use of members not moving with the rotating system

28.

GEL COMPOSITION, MEMBER, ELECTRONIC ELEMENT, ELECTRONIC DEVICE, AND METHOD FOR PRODUCING GEL COMPOSITION

      
Application Number JP2024039890
Publication Number 2025/105315
Status In Force
Filing Date 2024-11-08
Publication Date 2025-05-22
Owner
  • SHIN-ETSU CHEMICAL CO., LTD. (Japan)
  • SHINSHU UNIVERSITY (Japan)
Inventor
  • Sasada Yoshihito
  • Saito Hiroaki
  • Kawakubo Toshihiko
  • Hirai Toshihiro

Abstract

[Solution] Provided is a gel composition which contains a vinyl chloride-based resin and a plasticizer and which exhibits a gel state at 20°C. The plasticizer is at least one selected from the group consisting of isophthalic acid esters, terephthalic acid esters, fumaric acid esters, acetylricinoleic acid esters, citric acid esters, acetylcitric acid esters, adipic acid esters selected from di-2-ethylhexyl adipate (DOA) and diisononyl adipate (DINA), maleic acid esters and derivatives thereof and salts thereof. Also provided is an electronic element comprising a first electrode, a second electrode, and a polymer layer which is disposed between the first electrode and the second electrode and which contains the gel composition.

IPC Classes  ?

  • C08L 27/06 - Homopolymers or copolymers of vinyl chloride
  • C08J 3/18 - Plasticising macromolecular compounds
  • C08K 5/10 - EstersEther-esters

29.

THERMAL CONDUCTIVE STACKED INSULATIVE SUBSTRATE

      
Application Number 18833659
Status Pending
Filing Date 2023-02-02
First Publication Date 2025-05-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Mogi, Hiroshi
  • Uchida, Osamu
  • Yaginuma, Atsushi
  • Moteki, Masaki

Abstract

A thermal conductive stacked insulative substrate including: an elastic layer; and a thermal conductive ceramics insulative substrate, wherein the elastic layer is directly stacked on a surface of the thermal conductive ceramics insulative substrate. The thermal conductive stacked insulative substrate has a small thermal resistivity and excellent thermal conductivity.

IPC Classes  ?

  • C09K 5/14 - Solid materials, e.g. powdery or granular
  • C04B 35/10 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
  • C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
  • C04B 35/584 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on silicon nitride
  • C04B 35/634 - Polymers
  • C04B 41/45 - Coating or impregnating
  • C04B 41/49 - Compounds having one or more carbon-to-metal or carbon-to-silicon linkages
  • C04B 41/83 - Macromolecular compounds

30.

THERMALLY CONDUCTIVE SHEET AND METHOD FOR MANUFACTURING OF THE SAME

      
Application Number 18833983
Status Pending
Filing Date 2023-01-30
First Publication Date 2025-05-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Imaizumi, Keiji
  • Tsukada, Junichi

Abstract

A thermally conductive sheet containing a thermally conductive filler (B) that contains at least one of carbon and boron nitride in a polymer matrix (A), wherein the thermally conductive sheet has a thermal conductivity in a thickness direction of 15 W/m·K or more and a degree of orientation in which a long axis direction of the thermally conductive filler is oriented in a thickness direction of the thermally conductive sheet is 1.0 or more. This makes the filler highly oriented, and thus it is possible to provide a thermally conductive sheet that has excellent thermal conductivity in a thickness direction and low specific gravity.

IPC Classes  ?

31.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18930151
Status Pending
Filing Date 2024-10-29
First Publication Date 2025-05-15
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor Hatakeyama, Jun

Abstract

A resist composition is provided comprising a bis-onium salt consisting of a divalent anion having a sulfonic acid anion structure directly bonded to an iodized aromatic group and a carboxylic acid anion structure bonded to the aromatic group directly or via a linking group, and onium cations. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08K 5/42 - Sulfonic acidsDerivatives thereof
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/16 - Coating processesApparatus therefor

32.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18930232
Status Pending
Filing Date 2024-10-29
First Publication Date 2025-05-15
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor Hatakeyama, Jun

Abstract

A resist composition is provided comprising a bis-onium salt consisting of a divalent anion having a sulfonic acid anion structure directly bonded to an iodized aromatic group and a sulfonimide or sulfonamide anion structure bonded to the aromatic group directly or via a linking group, and onium cations. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08K 5/03 - Halogenated hydrocarbons aromatic
  • C08K 5/42 - Sulfonic acidsDerivatives thereof
  • C08K 5/45 - Heterocyclic compounds having sulfur in the ring
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/16 - Coating processesApparatus therefor

33.

SUBSTRATE FOR HIGH-FREQUENCY DEVICE, AND METHOD FOR PRODUCING SAME

      
Application Number 18836043
Status Pending
Filing Date 2022-12-22
First Publication Date 2025-05-15
Owner SHIN-ETSU HANDOTAI CO., LTD. (Japan)
Inventor
  • Matsubara, Toshiki
  • Suzuki, Katsuyoshi
  • Tanaka, Yuki
  • Suzuki, Atsushi
  • Abe, Tatsuo
  • Ohtsuki, Tsuyoshi

Abstract

A substrate for a high-frequency device including a support substrate having unevenness on a surface thereof, a diamond layer on the surface of the support substrate, and a silicon oxide film layer on the diamond layer. Thereby, the substrate for a high-frequency device using diamond having excellent high-frequency characteristics and a method for producing a substrate for a high-frequency device using diamond having excellent high-frequency characteristics are provided.

IPC Classes  ?

  • C23C 16/27 - Diamond only
  • C30B 29/04 - Diamond
  • G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces

34.

ADDITION CURING TYPE LIQUID SILICONE RUBBER COMPOSITION FOR AIRBAG, AND AIRBAG

      
Application Number JP2024032540
Publication Number 2025/100090
Status In Force
Filing Date 2024-09-11
Publication Date 2025-05-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Ashida Ryo
  • Ubukata Shigeru

Abstract

The present invention is an addition curing-type liquid silicone rubber composition for an airbag, which is characterized by containing components (A) to (G) as essential components. Component (A): an organopolysiloxane which has two or more silicon atom-bonded alkenyl groups per molecule and has a degree of polymerization of 50-2000; component (B): a powdered three-dimensional mesh-like organopolysiloxane resin; component (C): an organohydrogenpolysiloxane having two or more hydrosilyl groups per molecule; component (D): 1-50 parts by mass of a silica fine powder having a BET specific surface area of 50 m2/g or more; component (E): a hydrosilylation reaction catalyst; component (F): an organosilicon compound which has one or more functional groups selected from among an epoxy group, an isocyanate group, a (meth)acrylic group and an isocyanurate ring-containing organic group and one or more functional groups selected from among a hydrosilyl group, an alkoxysilyl group, a hydroxysilyl group and a vinyl group per molecule; and component (G) an organic compound which has one or more epoxy groups per molecule and does not have a hydrosilyl group or an alkoxysilyl group. Due to this configuration, provided are: an addition curing-type liquid silicone rubber composition for an airbag, the composition exhibiting excellent flame retardancy; and an airbag having a cured film obtained using said composition.

IPC Classes  ?

  • D06M 15/643 - Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds containing silicon in the main chain
  • B60R 21/235 - Inflatable members characterised by their material
  • C08L 83/04 - Polysiloxanes

35.

RAW MATERIAL ALLOY FOR MAGNETIC REFRIGERATION MATERIAL AND METHOD FOR MANUFACTURING SAME, AND MAGNETIC REFRIGERATION MATERIAL AND METHOD FOR MANUFACTURING SAME

      
Application Number JP2024037414
Publication Number 2025/100211
Status In Force
Filing Date 2024-10-21
Publication Date 2025-05-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Fukuda, Junya
  • Kume, Tetsuya

Abstract

(1-a)a(1-b-c-d)bcdz5361132171313 phase. A magnetic refrigeration material according to the present invention is obtained by hydrogenation heat treatment of the raw material alloy for the magnetic refrigeration material according to the present invention. According to the present invention, it is possible to provide: a raw material alloy for a magnetic refrigeration material, which makes it possible to control the hydrogen storage amount and to homogenize the hydrogen concentration distribution under a wider range of hydrogenation conditions than in the conventional art; a method for producing the raw material alloy for the magnetic refrigeration material; a magnetic refrigeration material having a high ΔS and a controlled transition temperature; and a method for producing the magnetic refrigeration material.

IPC Classes  ?

  • H01F 1/01 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials
  • C21D 6/00 - Heat treatment of ferrous alloys
  • C22C 38/00 - Ferrous alloys, e.g. steel alloys

36.

OPTICAL ISOLATOR AND LIGHT TRANSMISSION CIRCUIT MODULE

      
Application Number JP2024039078
Publication Number 2025/100359
Status In Force
Filing Date 2024-11-01
Publication Date 2025-05-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Watanabe Toshiaki

Abstract

The present invention is an optical isolator (81) that has two or more optical paths and that is characterized by: comprising an isolator chip (3) in which one or more polarizers (4) and one or more Faraday rotators (5) are integrally joined to each other in each of the optical paths; the isolator chip (3) and a substrate being joined and fixed together; the substrate being a translucent substrate (2); and light passing through the optical paths being transmitted through the isolator chip (3) and the translucent substrate (2). Due to this configuration, the present invention provides an optical isolator which is inserted into a laser module having a plurality of optical paths, and in which an isolator chip is not disposed in a space other than a translucent section thus enabling the process of assembling the isolator chip to be simplified.

IPC Classes  ?

  • G02B 27/28 - Optical systems or apparatus not provided for by any of the groups , for polarising
  • G02B 6/27 - Optical coupling means with polarisation selective and adjusting means
  • G02F 1/09 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect

37.

METHOD FOR PROCESSING DIAMOND

      
Application Number JP2024039355
Publication Number 2025/100422
Status In Force
Filing Date 2024-11-06
Publication Date 2025-05-15
Owner
  • SHIN-ETSU POLYMER CO., LTD. (Japan)
  • SHIN-ETSU CHEMICAL CO., LTD. (Japan)
  • NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY (Japan)
Inventor
  • Ikeno Junichi
  • Yamada Yohei
  • Suzuki Hideki
  • Matsuo Rika
  • Noguchi Hitoshi

Abstract

The present invention makes it possible to form a modified layer at any desired angle with the {001} plane of a main surface of single-crystal diamond. This method for processing diamond comprises: placing a laser condensing part 119 for condensing laser light B to face the {001} plane of a main surface 10a of a substrate 10 made of single-crystal diamond; and condensing the laser light in an inner portion of the substrate 10 by means of the laser condensing part 119 to thereby form a modified layer which extends toward the main surface 10a of the substrate 10 at an angle with the {001} plane. The modified layer includes processing marks and cleavages of the {111} plane around the processing marks, the processing marks being formed by thermally decomposing and graphitizing the diamond by condensing the laser light B by means of the laser condensing part 119, and the modified layer is formed toward the main surface 10a of the substrate 10 along a plane having an angle with the {001} plane.

IPC Classes  ?

  • C30B 29/04 - Diamond
  • B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
  • C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

38.

UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE AND METHOD FOR PRODUCING THEM

      
Application Number 18836152
Status Pending
Filing Date 2023-02-07
First Publication Date 2025-05-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Noguchi, Hitoshi

Abstract

An underlying substrate for a single crystal diamond laminate substrate includes an initial substrate being any of a single crystal Si {111} substrate and a single crystal α-Al2O3 {0001} substrate, etc., an intermediate layer on the initial substrate, in which an outermost surface on the initial substrate has no off angle, or has an off angle in a crystal axis <−1-12> direction relative to a cubic crystal plane orientation {111}, or has an off angle in a crystal axis <10-10> or <11-20> direction relative to a hexagonal crystal plane orientation {0001}, etc. Thereby, the underlying substrate is provided, in which the substrate is capable of forming a single crystal diamond layer having a large area (large diameter), high crystallinity, few hillocks, few abnormal growth particles, few dislocation defects, etc., high purity, low stress, and high quality, and applicable to an electronic and magnetic device.

IPC Classes  ?

  • C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"
  • C30B 25/06 - Epitaxial-layer growth by reactive sputtering
  • C30B 25/16 - Controlling or regulating
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate
  • C30B 29/04 - Diamond
  • C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields

39.

PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN-FORMING PROCESS

      
Application Number 18936492
Status Pending
Filing Date 2024-11-04
First Publication Date 2025-05-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Maruyama, Hitoshi

Abstract

The present invention is a photosensitive resin composition including, (A) an acid-crosslinkable group-containing silicone resin, (B) an oxazoline compound or a derivative thereof, and (C) a photo-acid generator. This provides: a photosensitive resin composition that can easily form a thick and fine pattern without causing discoloration of copper and can form a resin film that is excellent in copper migration resistance, adhesiveness to a base material, and reliability; a photosensitive resin film; a photosensitive dry film; and a pattern-forming process by using these.

IPC Classes  ?

40.

TERBIUM-CONTAINING PARAMAGNETIC GARNET TRANSPARENT CERAMIC AND MAGNETO-OPTIC DEVICE USING SAME

      
Application Number JP2024037940
Publication Number 2025/100250
Status In Force
Filing Date 2024-10-24
Publication Date 2025-05-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Ikari, Masanori
  • Yahagi, Akira
  • Matsumoto, Takuto
  • Kataoka, Yuki
  • Tanaka, Keita

Abstract

21-x-yxy31-zz51212 (where 0.05≤x≤0.45, 0

IPC Classes  ?

  • C04B 35/44 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminates
  • C04B 35/50 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds
  • G02B 27/28 - Optical systems or apparatus not provided for by any of the groups , for polarising

41.

SILICA-COATED PLATE-LIKE POWDER AND COSMETIC

      
Application Number JP2024038503
Publication Number 2025/100301
Status In Force
Filing Date 2024-10-29
Publication Date 2025-05-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Tanaka Mitsuru
  • Takagi Kazunori

Abstract

The present invention provides a composite powder and a cosmetic which have good usability at the time of application, attain a natural finish with transparency and suppressed gloss while correcting unevenness or the like of the skin, and impart an excellent effect in sustaining a cosmetic coating film.

IPC Classes  ?

  • A61K 8/19 - Cosmetics or similar toiletry preparations characterised by the composition containing inorganic ingredients
  • A61K 8/02 - Cosmetics or similar toiletry preparations characterised by special physical form
  • A61K 8/25 - SiliconCompounds thereof
  • A61Q 1/00 - Make-up preparationsBody powdersPreparations for removing make-up
  • A61Q 1/04 - Preparations containing skin colorants, e.g. pigments for lips
  • A61Q 1/06 - Lipsticks
  • A61Q 1/08 - Preparations containing skin colorants, e.g. pigments for cheeks, e.g. rouge
  • A61Q 1/10 - Preparations containing skin colorants, e.g. pigments for eyes, e.g. eyeliner, mascara
  • A61Q 3/02 - Nail coatings
  • A61Q 15/00 - Anti-perspirants or body deodorants
  • A61Q 19/00 - Preparations for care of the skin
  • C01B 33/42 - Micas
  • C09C 3/06 - Treatment with inorganic compounds

42.

HYDROPHOBIC CELLULOSE NANOFIBER, HYDROPHOBIC CELLULOSE NANOFIBER DISPERSION, AND COSMETIC

      
Application Number 18837312
Status Pending
Filing Date 2023-02-02
First Publication Date 2025-05-08
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Abe, Takuya

Abstract

A hydrophobic cellulose nanofiber including (A) a cellulose nanofiber and (B) isocyanate group-containing organopolysiloxane, wherein the isocyanate group-containing organopolysiloxane is bonded to a hydroxy group of the cellulose nanofiber through a urethane bond. By this, it is possible to provide hydrophobic cellulose nanofibers that can be dispersed in liquid oils at room temperature, especially in silicone oils, and a dispersion medium for the same.

IPC Classes  ?

  • A61K 8/73 - Polysaccharides
  • A61K 8/02 - Cosmetics or similar toiletry preparations characterised by special physical form
  • A61K 8/89 - Polysiloxanes
  • C08L 1/02 - CelluloseModified cellulose
  • C08L 83/06 - Polysiloxanes containing silicon bound to oxygen-containing groups

43.

ORGANOPOLYSILOXANE AND ROOM TEMPERATURE-CURABLE ORGANOPOLYSILOXANE COMPOSITION CONTAINING SAME

      
Application Number 18837315
Status Pending
Filing Date 2023-01-27
First Publication Date 2025-05-08
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Aso, Fumihiro
  • Fujiwara, Akitsugu

Abstract

An organopolysiloxane according to the present invention, having a structural unit ratio represented by formula (1), provides a room temperature-curable composition that has excellent curability and stability even when a solvent is not used, and that is capable of producing a cured product having high hardness and high transparency. An organopolysiloxane according to the present invention, having a structural unit ratio represented by formula (1), provides a room temperature-curable composition that has excellent curability and stability even when a solvent is not used, and that is capable of producing a cured product having high hardness and high transparency. An organopolysiloxane according to the present invention, having a structural unit ratio represented by formula (1), provides a room temperature-curable composition that has excellent curability and stability even when a solvent is not used, and that is capable of producing a cured product having high hardness and high transparency. (R1 and R2 each represent an alkyl group having 1-12 carbon atoms or an aryl group having 6-10 carbon atoms; k represents an integer of 1-3; m represents a number of 5-100; n represents 2 or 3; R3, R4, and R5 each represent an alkyl group having 1-12 carbon atoms, an alkenyl group having 2-8 carbon atoms, an aryl group having 6-10 carbon atoms, an aralkyl group having 7-10 carbon atoms, an alkoxy group having 1-4 carbon atoms, or a hydroxy group; and a, b, c, d, e, and f each represent a number satisfying a>0, b>0, c≥0, d>0, e>0, and f≥0, as well as a+b+c+d+e+f=1.)

IPC Classes  ?

  • C08G 77/50 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
  • C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
  • C08G 77/08 - Preparatory processes characterised by the catalysts used
  • C08K 5/5425 - Silicon-containing compounds containing oxygen containing at least one C=C bond

44.

Polymer, Positive And Negative Photosensitive Resin Compositions, Patterning Process, Method For Forming Cured Film, Interlayer Insulating Film, Surface Protective Film, And Electronic Component

      
Application Number 18932994
Status Pending
Filing Date 2024-10-31
First Publication Date 2025-05-08
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Urano, Hiroyuki
  • Iio, Masashi
  • Watanabe, Osamu
  • Takemura, Katsuya

Abstract

The present invention is a polymer containing: a structural unit of general formula (1) and/or (2); and a structural unit of general formula (3) and/or (4), where X1 represents a tetravalent organic group, R1 to R4 each represent a monovalent organic group or a hydrogen atom, provided that at least one is a monovalent organic group, L represents a divalent organic group or a divalent atom, X2 represents a divalent organic group, X3 represents a tetravalent organic group, “s” represents 0 or 1, Z represents a divalent bonding group, and X4 represents a divalent organic group. This provides a polymer soluble in an aqueous alkaline solution and usable as a base resin for positive and negative photosensitive resin compositions which enable fine pattern formation, provide high resolution, and have excellent mechanical characteristics even when cured at low temperatures. The present invention is a polymer containing: a structural unit of general formula (1) and/or (2); and a structural unit of general formula (3) and/or (4), where X1 represents a tetravalent organic group, R1 to R4 each represent a monovalent organic group or a hydrogen atom, provided that at least one is a monovalent organic group, L represents a divalent organic group or a divalent atom, X2 represents a divalent organic group, X3 represents a tetravalent organic group, “s” represents 0 or 1, Z represents a divalent bonding group, and X4 represents a divalent organic group. This provides a polymer soluble in an aqueous alkaline solution and usable as a base resin for positive and negative photosensitive resin compositions which enable fine pattern formation, provide high resolution, and have excellent mechanical characteristics even when cured at low temperatures.

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/16 - Coating processesApparatus therefor
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

45.

WINDOW AND MANUFACTURING METHOD THEREFOR

      
Application Number JP2024037647
Publication Number 2025/094767
Status In Force
Filing Date 2024-10-23
Publication Date 2025-05-08
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Yoshikawa Hiroki

Abstract

nnnnnnnnnnn is the relative permittivity of the respective layer at an intermediate frequency of the target communication frequency band, λ is the radio wave wavelength (mm) at the intermediate frequency, N is a natural number from 1 to 100, and n is the number of the respective layer.) (2): 0.5N–0.2≤d∙√ε/λ≤0.5N+0.2

IPC Classes  ?

  • C03C 27/06 - Joining glass to glass by processes other than fusing
  • C03C 27/12 - Laminated glass
  • E06B 3/66 - Units comprising two or more parallel glass or like panes in spaced relationship, the panes being permanently secured together, e.g. along the edges
  • H01Q 1/22 - SupportsMounting means by structural association with other equipment or articles
  • H01Q 1/42 - Housings not intimately mechanically associated with radiating elements, e.g. radome
  • H01Q 15/14 - Reflecting surfacesEquivalent structures

46.

DIAMOND SUBSTRATE, METHOD FOR PRODUCING SAME, AND SENSOR

      
Application Number JP2024038676
Publication Number 2025/094988
Status In Force
Filing Date 2024-10-30
Publication Date 2025-05-08
Owner
  • SHIN-ETSU CHEMICAL CO., LTD. (Japan)
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
  • INSTITUTE OF SCIENCE TOKYO (Japan)
Inventor
  • Noguchi Hitoshi
  • Makino Toshiharu
  • Ogura Masahiko
  • Kato Hiromitsu
  • Haruyama Moriyoshi
  • Kajiyama Kenichi
  • Kainuma Yuta
  • Hatano Yuji
  • Iwasaki Takayuki
  • Hatano Mutsuko

Abstract

The present invention provides a method for producing a diamond substrate by forming a diamond crystal on a base substrate by a CVD method, wherein in order to form an NVC-containing diamond crystal layer on at least a part of the diamond crystal, a starting material gas contains 0.005% to 7.000% by volume inclusive of a hydrocarbon gas, 85.000% by volume or more but less than 99.995% by volume of a hydrogen gas, and 5.0 × 10-5% to 8.000% by volume inclusive of a nitrogen gas or a nitride gas, and a 12C concentrated hydrocarbon gas which has a higher ratio of a 12C constituent hydrocarbon gas than a natural hydrocarbon gas is used as the hydrocarbon gas in the starting material gas. As a result, the present invention provides a method for producing a diamond substrate, with which it is possible to form a diamond crystal that has a high orientation in the NV axis (for example, high [111] orientation) and high-density nitrogen-vacancy centers (NVC) with a single spin by performing CVD on the base substrate under prescribed conditions.

IPC Classes  ?

  • C30B 29/04 - Diamond
  • C23C 16/27 - Diamond only
  • C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
  • H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

47.

COATING MATERIAL FOR PHOTOLITHOGRAPHY, RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18768499
Status Pending
Filing Date 2024-07-10
First Publication Date 2025-05-01
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Hatakeyama, Jun
  • Yamamoto, Yasuyuki
  • Imata, Tomohiro

Abstract

The coating material for photolithography contains a surfactant having no perfluoroalkyl structure. The coating material for photolithography contains 0.0001 to 3 wt % of a surfactant made from a resin having an aromatic group substituted with a fluorine atom, a trifluoromethoxy group, a difluoromethoxy group, a trifluoromethylthio group, or a difluoromethylthio group.

IPC Classes  ?

48.

NEGATIVE ELECTRODE ACTIVE MATERIAL, MIXED NEGATIVE ELECTRODE ACTIVE MATERIAL, AND METHOD FOR PRODUCING NEGATIVE ELECTRODE ACTIVE MATERIAL

      
Application Number 18836963
Status Pending
Filing Date 2023-02-09
First Publication Date 2025-05-01
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Ishikawa, Takuya
  • Hirose, Takakazu
  • Otosaka, Tetsuya
  • Takahashi, Kohta

Abstract

A negative electrode active material contains negative electrode active material particles, in which the negative electrode active material particles contain silicon oxide particles coated with a carbon layer, and the carbon layer has a peak position attributed to a G band in a range of more than 1590 cm−1 and 1597 cm−1 or less in a Raman spectrum obtained from Raman spectrometry for at least a part of the carbon layer. This can provide the negative electrode active material capable of improving cycle characteristics when used as the negative electrode active material of a secondary battery.

IPC Classes  ?

  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/02 - Electrodes composed of, or comprising, active material
  • H01M 4/04 - Processes of manufacture in general
  • H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
  • H01M 4/583 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx

49.

REFLECTIVE PHOTOMASK BLANK AND METHOD FOR MANUFACTURING REFLECTIVE PHOTOMASK BLANK

      
Application Number 18907139
Status Pending
Filing Date 2024-10-04
First Publication Date 2025-05-01
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Ogose, Taiga
  • Inazuki, Yukio
  • Kaneko, Hideo
  • Kosaka, Takuro

Abstract

A reflective photomask blank has a substrate 10; and a multilayer reflective film 50. The multilayer reflective film 50 has a periodic stacked structure in which a low refractive index layer 30 containing ruthenium (Ru), a high refractive index layer 20 containing silicon (Si), and a diffusion prevention layer 40. The diffusion prevention layer 40 is formed in contact with the low refractive index layer 30 on both or one of a side of the low refractive index layer 30 close to the substrate 10 and a side of the low refractive index layer 30 away from the substrate 10. The diffusion prevention layer 40 is one or more sublayers selected from a layer containing a silicon nitride (SiN), a layer containing silicon carbide (Sic), a layer containing molybdenum (Mo), a layer containing a molybdenum nitride (MoN), and a layer containing molybdenum carbide (MoC).

IPC Classes  ?

  • G03F 1/24 - Reflection masksPreparation thereof

50.

PREPARATION OF TERTIARY ESTER-CONTAINING AROMATIC VINYL MONOMER

      
Application Number 18918334
Status Pending
Filing Date 2024-10-17
First Publication Date 2025-05-01
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor Fukushima, Masahiro

Abstract

A tertiary ester-containing aromatic vinyl monomer is prepared by reacting an N-acylimidazole compound with a tertiary alcohol compound in the presence of a metal alkoxide as a reaction promoter. The tertiary ester-containing aromatic vinyl monomer of quality is prepared at a high efficiency and is applicable to resist compositions adapted for the EB and EUV lithography processes.

IPC Classes  ?

  • C08F 220/60 - Amides containing nitrogen in addition to the carbonamido nitrogen
  • C08F 216/08 - Allyl alcohol
  • C08F 216/10 - Carbocyclic compounds
  • C08F 220/12 - Esters of monohydric alcohols or phenols
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/40 - Esters of unsaturated alcohols

51.

REFLECTIVE PHOTOMASK BLANK AND METHOD FOR MANUFACTURING REFLECTIVE PHOTOMASK

      
Application Number 18926085
Status Pending
Filing Date 2024-10-24
First Publication Date 2025-05-01
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Kosaka, Takuro
  • Inazuki, Yukio
  • Ogose, Taiga

Abstract

A reflective photomask blank has: a substrate 10; a reflective multilayer film 20 that is formed on one main surface of the substrate 10 and reflects the exposure light; a protective film 50 formed in contact with the reflective multilayer film 20; and an absorbing film 70 that is formed on the protective film 50 and absorbs the exposure light. The protective film 50 is formed using a film containing ruthenium (Ru). The absorbing film 70 is formed using a single-layer film containing tantalum (Ta) and nitrogen (N), and has a content of nitrogen of 30 atom % or more and less than 60 atom %. Contrast between light reflected from a surface of the protective film 50 and light reflected on a surface of the absorbing film 70 with respect to light having a wavelength of 193 nm to 248 nm is 20% or more.

IPC Classes  ?

  • G03F 1/24 - Reflection masksPreparation thereof
  • C03C 17/09 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
  • C03C 17/34 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C 17/36 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal

52.

METHOD OF MANUFACTURING SOLID PHARMACEUTICAL PREPARATION COATED WITH SOLVENT-FREE COATING MATERIAL

      
Application Number 18930238
Status Pending
Filing Date 2024-10-29
First Publication Date 2025-05-01
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Sakai, Hidetoshi
  • Hoshino, Takafumi

Abstract

Provided is a method of manufacturing a solid pharmaceutical preparation which enables the coating using spraying of powder, containing HPMCAS, alone and requiring only a single layering process. The method of manufacturing a solid pharmaceutical preparation coated with a solvent-free coating material essentially includes the steps of: mixing a powdered hydroxypropylmethylcellulose acetate succinate, a powdered plasticizer, and a powdered wetting agent in advance, as a preliminary mixing step, to prepare a precursor mixture; mixing the precursor mixture and a solid pharmaceutical preparation, as a mixing step, to produce a mixture product; and heating the mixture product, as a heating step, to obtain a coated solid pharmaceutical preparation.

IPC Classes  ?

53.

ALDIMINE-MODIFIED SILICONE, MOISTURE-CURABLE SILICONE RESIN COMPOSITION CONTAINING SAME, AND METHOD FOR PRODUCING SAID ALDIMINE-MODIFIED SILICONE

      
Application Number JP2024031426
Publication Number 2025/088907
Status In Force
Filing Date 2024-09-02
Publication Date 2025-05-01
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Fujita Shoji

Abstract

The present invention is an aldimine-modified silicone represented by formula (1). Formula (1): (AR121/2aa(R122/2bb(R13/24/24/2)d (In this formula, A is an aldimine group represented by formula (2), each R1is independently a C1-10 monovalent hydrocarbon group, a satisfies 2 ≤ a ≤ 5, b satisfies 0 < b ≤ 200, c satisfies 0 ≤ c ≤ 1, d satisfies 0 ≤ d ≤ 1, and 2 ≤ a + b + c + d ≤ 200 is satisfied.) Formula (2): -Q1-CH=N-R2(In this formula, Q1is a C2-10 divalent hydrocarbon group, and R2 is a C1-10 monovalent hydrocarbon group.) In view of the above, provided are an aldimine-modified silicone and a method for producing said aldimine-modified silicone which make long-term single-liquid storage of a silicone resin composition possible without chemically modifying a polyamine compound.

IPC Classes  ?

  • C08G 77/388 - Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing nitrogen
  • C08L 83/04 - Polysiloxanes

54.

FILTRATION MEMBRANE REGENERATION METHOD AND SILICA MICROPARTICLE DISPERSION LIQUID

      
Application Number JP2024032805
Publication Number 2025/088933
Status In Force
Filing Date 2024-09-13
Publication Date 2025-05-01
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Kishi Ryota
  • Mori Kento
  • Ishida Masahiko

Abstract

This filtration membrane regeneration method comprises a chemical liquid cleaning step in which a filtration membrane is cleaned using a chemical liquid containing 0.1 wt% to 14 wt% of fluoride ions.

IPC Classes  ?

  • B01D 65/06 - Membrane cleaning or sterilisation with special washing compositions
  • B01D 61/14 - UltrafiltrationMicrofiltration
  • B01D 63/02 - Hollow fibre modules
  • B01D 71/42 - Polymers of nitriles, e.g. polyacrylonitrile
  • B01D 71/68 - PolysulfonesPolyethersulfones

55.

FLAME-RETARDANT AROMATIC POLYCARBONATE RESIN COMPOSITION AND MOLDED ARTICLE OF SAME

      
Application Number JP2024035193
Publication Number 2025/088996
Status In Force
Filing Date 2024-10-02
Publication Date 2025-05-01
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Higuchi Koichi
  • Yoshizawa Masahiro
  • Omatsu Yamato

Abstract

The present invention provides a flame-retardant aromatic polycarbonate resin composition which contains (A) an aromatic polycarbonate resin, (B) an organohydrogenpolysiloxane that is represented by formula (1), and (C) an organic metal salt that does not contain fluorine, and which contains a specific amount of an aromatic polycarbonate resin that has a specific MVR. Formula (1): [(R1O)(R221/2aa[(R331/2bb[(H)(R42/2cxx(R52-x2/2dd[(R622/2ee[(R73/2ff (In the formula, R1to R7 each represent an alkyl group or the like; Ar represents an aryl group; x is 1 or 2; 0 < a ≤ 0.03; 0 < b ≤ 0.30; 0 ≤ c ≤ 0.45; 0.20 ≤ d ≤ 0.70; 0 ≤ e ≤ 0.20; 0 ≤ f ≤ 0.70; and (a + b + c + d + e + f) is 1.)

IPC Classes  ?

  • C08L 69/00 - Compositions of polycarbonatesCompositions of derivatives of polycarbonates
  • C08K 5/42 - Sulfonic acidsDerivatives thereof
  • C08L 83/05 - Polysiloxanes containing silicon bound to hydrogen
  • C09K 21/06 - Organic materials
  • C09K 21/14 - Macromolecular materials
  • C08G 77/12 - Polysiloxanes containing silicon bound to hydrogen

56.

SURFACE MODIFIER AND COMPOSITION CONTAINING SAID SURFACE MODIFIER

      
Application Number JP2024036282
Publication Number 2025/089096
Status In Force
Filing Date 2024-10-10
Publication Date 2025-05-01
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Goto Tomoyuki

Abstract

[Problem] The purpose of the present invention is to provide a surface modifier which contains a water-soluble polyether-modified organopolysiloxane, while maintaining the surface characteristics of a polyether-modified polyorganosiloxane. [Solution] The present invention provides a surface modifier which is composed of a polyether-modified organopolysiloxane that has an oxyethylene group and an oxypropylene group, the surface modifier being characterized in that: the polyether-modified organopolysiloxane has an oxyethylene group content of 35 mass% or less; and a 1 mass% aqueous solution of the polyether-modified organopolysiloxane has a Haze value of 5.0 or less at 25°C, and a cloud number of 10 or more. [Selected drawing] None

IPC Classes  ?

  • C09K 3/00 - Materials not provided for elsewhere
  • C08G 65/336 - Polymers modified by chemical after-treatment with organic compounds containing silicon
  • C08G 77/46 - Block- or graft-polymers containing polysiloxane sequences containing polyether sequences
  • C08G 81/00 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers
  • C09D 5/16 - Anti-fouling paintsUnderwater paints
  • C09D 7/65 - Additives macromolecular
  • C09D 201/00 - Coating compositions based on unspecified macromolecular compounds

57.

FLUOROPOLYETHER-GROUP-CONTAINING POLYMER, SURFACE TREATMENT AGENT, AND ARTICLE

      
Application Number 18692228
Status Pending
Filing Date 2022-09-05
First Publication Date 2025-05-01
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Sakoh, Ryusuke
  • Uchida, Takashi
  • Motegi, Miki

Abstract

According to the present invention, a cured coating having exceptional water and oil repellency and abrasion resistance as well as exceptional chucking properties can be formed by using a fluoropolyether-group-containing polymer having a silanol group or a hydrolyzable silyl group represented by formula (1) According to the present invention, a cured coating having exceptional water and oil repellency and abrasion resistance as well as exceptional chucking properties can be formed by using a fluoropolyether-group-containing polymer having a silanol group or a hydrolyzable silyl group represented by formula (1) (Rf is a divalent fluoroxyalkylene-group-containing polymer residue, U is a divalent or trivalent organic group, Z is a silalkylene structure or a silarylene structure, Y is a divalent organic group, R is a C1-4 alkyl group or a phenyl group, X is a hydroxyl group or a hydrolyzable group, n is 1-3, and m is 1 or 2) as a surface treatment agent including said polymer and/or a partial (hydrolyzed) condensate thereof.

IPC Classes  ?

  • C09D 183/12 - Block or graft copolymers containing polysiloxane sequences containing polyether sequences
  • C08G 65/336 - Polymers modified by chemical after-treatment with organic compounds containing silicon
  • C08G 77/46 - Block- or graft-polymers containing polysiloxane sequences containing polyether sequences
  • C09D 5/16 - Anti-fouling paintsUnderwater paints
  • G02B 1/18 - Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films

58.

THERMALLY CONDUCTIVE COMPOSITION AND CURED PRODUCT OF SAME

      
Application Number 18836857
Status Pending
Filing Date 2023-01-27
First Publication Date 2025-05-01
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Tsuchida, Kazuhiro
  • Endo, Akihiro
  • Kimura, Tsuneo

Abstract

Provided is a thermally conductive composition that includes (A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C. Provided is a thermally conductive composition that includes (A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C. (R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d(O1/2X)e  (1) Provided is a thermally conductive composition that includes (A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C. (R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d(O1/2X)e  (1) (in the formula, R is a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, or an alkenyl group, X is a hydrogen atom or an alkyl group, a, b, c, and d are numbers that satisfy 0≤a≤0.8, 0≤b≤0.8, 0.2≤c≤1, 0≤d≤0.8, and a+b+c+d=1, and e is a number that satisfies 0≤e≤0.1) and (B) 2,000-7,000 parts by mass of a thermally conductive filler. Provided is a thermally conductive composition that includes (A) 100 parts by mass of an organopolysiloxane that is represented by formula (1) and is a liquid at 23° C. (R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d(O1/2X)e  (1) (in the formula, R is a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, or an alkenyl group, X is a hydrogen atom or an alkyl group, a, b, c, and d are numbers that satisfy 0≤a≤0.8, 0≤b≤0.8, 0.2≤c≤1, 0≤d≤0.8, and a+b+c+d=1, and e is a number that satisfies 0≤e≤0.1) and (B) 2,000-7,000 parts by mass of a thermally conductive filler. The viscosity of the thermally conductive composition at 25° C. is no more than 1,000 Pa·s.

IPC Classes  ?

59.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18910429
Status Pending
Filing Date 2024-10-09
First Publication Date 2025-05-01
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Hatakeyama, Jun
  • Fukushima, Masahiro

Abstract

A resist composition comprising an acid generator containing a sulfonium or iodonium salt of an arylsulfonic acid substituted with at least two iodine atoms is provided. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/22 - Esters containing halogen
  • C08K 5/42 - Sulfonic acidsDerivatives thereof
  • C08K 5/45 - Heterocyclic compounds having sulfur in the ring
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

60.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18910437
Status Pending
Filing Date 2024-10-09
First Publication Date 2025-05-01
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Hatakeyama, Jun
  • Fukushima, Masahiro

Abstract

A resist composition comprising a base polymer possessing a sulfonium or iodonium salt structure having an iodized arylsulfonic acid anion attached to its backbone is provided. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/029 - Inorganic compoundsOnium compoundsOrganic compounds having hetero atoms other than oxygen, nitrogen or sulfur
  • G03F 7/06 - Silver salts

61.

POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18918378
Status Pending
Filing Date 2024-10-17
First Publication Date 2025-05-01
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Hatakeyama, Jun
  • Fukushima, Masahiro
  • Yamahira, Tatsuya
  • Ohashi, Masaki

Abstract

A positive resist composition is provided comprising a base polymer comprising repeat units (a) having a substituted or unsubstituted carboxy group and a substituted or unsubstituted phenolic hydroxy group, repeat units (b) having an acid labile group, and repeat units (c) consisting of a sulfonic acid anion bonded to the polymer backbone and a sulfonium or iodonium cation. It exhibits a high sensitivity and resolution and forms a pattern of satisfactory profile with reduced edge roughness or dimensional variation.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

62.

INSULATING COATING MATERIAL FOR COATING ELECTRIC WIRE, INSULATED WIRE, COIL, AND ELECTRIC OR ELECTRONIC DEVICE

      
Application Number 18929741
Status Pending
Filing Date 2024-10-29
First Publication Date 2025-05-01
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Tsutsumi, Yoshihiro
  • Ikeda, Tadaharu
  • Iwasaki, Masayuki

Abstract

Provided are an insulating coating material for coating electric wire, which is capable of being cured at a relatively low temperature without using a high-boiling point solvent such as N-methyl-2-pyrrolidone (NMP), and provides a cured product that is excellent in balance between heat resistance, moisture resistance, insulation property, and flexibility; and an insulated wire or the like using the same. The insulating coating material for coating electric wire includes (A) a maleimide compound having a bisphenol structure and a number average molecular weight of 5,000 to 50,000, and (B) a reaction initiator. The insulated wire includes a cured film formed of the insulating coating material for coating electric wire.

IPC Classes  ?

  • H01B 3/30 - Insulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances plasticsInsulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances resinsInsulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances waxes

63.

QUANTUM DOT BODY, QUANTUM DOT COMPOSITION, AND WAVELENGTH CONVERSION MATERIAL AND PRODUCTION METHOD THEREOF

      
Application Number JP2024035024
Publication Number 2025/088985
Status In Force
Filing Date 2024-09-30
Publication Date 2025-05-01
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Tobishima Kazuya
  • Aoki Shinji
  • Nojima Yoshihiro

Abstract

This quantum dot body comprises a quantum dot that emits fluorescent light by the action of excitation light. The quantum dot body is characterized in that the quantum dot comprises a semiconductor nanoparticle core and a semiconductor nanoparticle shell that coats the semiconductor nanoparticle core, the surface of the quantum dot is coated with a metal oxide, and the surface of the metal oxide is modified with a phosphonic acid derivative. The quantum dot body is also characterized by having a polymer coating layer on the outermost surface thereof, wherein the polymer coating layer is formed by bonding a reactive substituent in the phosphonic acid derivative to a reactive substituent in a polymer. As a result, there are provided: a quantum dot body which is further improved in stability while maintaining the fluorescence emission characteristics of a quantum dot, and is also further improved in compatibility with a highly polar solvent or a photosensitive resin composition; a quantum dot composition in which the quantum dot body is dispersed in a resin material; a wavelength conversion material obtained by curing the quantum dot composition; and a method for producing the wavelength conversion material.

IPC Classes  ?

  • C09K 11/08 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials
  • B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
  • B82Y 40/00 - Manufacture or treatment of nanostructures
  • C08F 2/00 - Processes of polymerisation
  • C08F 292/00 - Macromolecular compounds obtained by polymerising monomers on to inorganic materials
  • G02B 5/20 - Filters
  • C09K 11/56 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing sulfur
  • C09K 11/70 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing phosphorus
  • C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements

64.

DISPERSION AND COSMETIC CONTAINING SAME

      
Application Number JP2024037215
Publication Number 2025/089201
Status In Force
Filing Date 2024-10-18
Publication Date 2025-05-01
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Miyauchi Masaru
  • Konishi Masayuki

Abstract

Provided is a dispersion having excellent dispersibility, especially dispersibility in aqueous media, water resistance, and feel on use (absence of stickiness) that contains components (a)-(d): (a) 10-85 mass% of a hydrophobized inorganic powder having a number-average primary particle size by image analysis of a transmission electron micrograph of more than 200 nm and equal to or less than 700 nm, (b) 1-80 mass% of an aqueous component having two or more alcoholic hydroxyl groups, (c) 1-20 mass% of a polyglycerol-modified silicone that is soluble in component (b), and (d) 0-2 mass% of a polyglycerol-modified silicone that is insoluble in component (b), where the ratio of the content of component (d) to the content of component (c) represented by (d)/(c) is 0.1 or less.

IPC Classes  ?

  • A61K 8/29 - TitaniumCompounds thereof
  • A61K 8/34 - Alcohols
  • A61K 8/894 - Polysiloxanes saturated, e.g. dimethicone, phenyl trimethicone, C24-C28 methicone or stearyl dimethicone modified by a polyoxyalkylene group, e.g. cetyl dimethicone copolyol
  • A61Q 1/04 - Preparations containing skin colorants, e.g. pigments for lips
  • A61Q 1/06 - Lipsticks
  • A61Q 1/10 - Preparations containing skin colorants, e.g. pigments for eyes, e.g. eyeliner, mascara
  • A61Q 1/12 - Face or body powders, e.g. for grooming, adorning or absorbing
  • A61Q 17/04 - Topical preparations for affording protection against sunlight or other radiationTopical sun tanning preparations
  • A61Q 19/00 - Preparations for care of the skin

65.

POLYETHER-MODIFIED ORGANOPOLYSILOXANE

      
Application Number JP2024038059
Publication Number 2025/089374
Status In Force
Filing Date 2024-10-25
Publication Date 2025-05-01
Owner
  • SHIN-ETSU CHEMICAL CO., LTD. (Japan)
  • NOF CORPORATION (Japan)
Inventor
  • Goto Tomoyuki
  • Murai Masaki
  • Yoshikawa Fumitaka

Abstract

[Problem] The purpose of the present invention is to provide a polyether-modified organopolysiloxane which has good water solubility without impairing the characteristics of siloxane, while having a polyether chain. [Solution] The present invention provides a polyether-modified organopolysiloxane which is represented by formula (1) and has a block copolymer structure comprising a polyblock structure of oxyethylene and a polyblock structure of oxypropylene. (In the formula, each R independently represents a group selected from among an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, and an aralkyl group having 7 to 10 carbon atoms; x represents an integer of 1 to 100; and each R1independently represents a group represented by formula (2).) (In the formula, R2 represents an alkyl group having 1 to 12 carbon atoms or an acetyl group; n represents an integer of 2 to 10; a represents an integer of 3 to 60; b represents an integer of 3 to 60; b/(a + b) is within the range of 0.3 to 0.8; and oxypropylene in parentheses with the subscript a and oxyethylene in parentheses with the subscript b respectively have polyblock structures in the sequence shown in formula (2).)

IPC Classes  ?

  • C08G 77/46 - Block- or graft-polymers containing polysiloxane sequences containing polyether sequences
  • C08G 65/336 - Polymers modified by chemical after-treatment with organic compounds containing silicon
  • C08G 81/00 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers
  • C09K 23/42 - Ethers, e.g. polyglycol ethers of alcohols or phenols
  • C09K 23/54 - Silicon compounds

66.

FILM FORMING APPARATUS AND FILM FORMING METHOD

      
Application Number 18725253
Status Pending
Filing Date 2022-12-07
First Publication Date 2025-04-24
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Hashigami, Hiroshi

Abstract

A film forming apparatus including an atomizing means for atomizing a raw material solution to form a raw material mist, a carrier gas supply means to transport the raw material mist, a mist supply means to supply a gas mixture, in which the raw material mist and the carrier gas are mixed, to a surface of a substrate, a stage on which the substrate is placed, a measurement means for directly or indirectly measuring a supply amount of the raw material mist to output a signal in accordance with a measured value obtained by the measurement, and a control means for receiving the signal to adjust the supply amount of the raw material mist based on the signal.

IPC Classes  ?

  • C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
  • C23C 16/40 - Oxides
  • C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C 16/52 - Controlling or regulating the coating process

67.

CRYSTALLINE OXIDE FILM, LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING CRYSTALLINE OXIDE FILM

      
Application Number 18835580
Status Pending
Filing Date 2023-01-17
First Publication Date 2025-04-24
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Watabe, Takenori
  • Hashigami, Hiroshi
  • Sakatsume, Takahiro

Abstract

A crystalline oxide film containing gallium as a main component, in which when CuKα rays are made incident on the crystalline oxide film to perform X-ray diffraction, a reflection output in scanning ω and 2θ has a local maximum point when 16.20°<2θ<39.90° and 20.30°<ω<32.20° at an angle φ around a φ axis orthogonal to a surface of the crystalline oxide film at the angle φ where a peak attributable to the crystalline oxide film by ω-2θ measurement is maximum, and 40.10°<ω+θ<40.40° relative to ω and θ at which the reflection output reaches a maximum is satisfied. This provides the crystalline oxide film, a laminated structure, a semiconductor device with excellent semiconductor properties, particularly excellent withstand voltage, and a method for producing a crystalline oxide film.

IPC Classes  ?

  • H10D 62/80 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
  • C01G 15/00 - Compounds of gallium, indium, or thallium

68.

THERMAL CONDUCTIVE SILICONE COMPOSITION

      
Application Number 18835812
Status Pending
Filing Date 2023-02-03
First Publication Date 2025-04-24
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Kubono, Toko
  • Tsuji, Kenichi

Abstract

A thermal conductive silicone composition including: (A) an organopolysiloxane having at least two alkenyl groups per molecule: 100 parts by mass; (B) an organohydrogen polysiloxane having at least two silicon atom-bonded hydrogen atoms per molecule: such that (the number of Si—H groups in component (B))/(the number of alkenyl groups in component (A)) is 0.5 to 3.0; (C) a filler containing one or more thermal conductive powders: 800 to 20,000 parts by mass; (D) a hydrolyzable organopolysiloxane of formula (1): 20 to 400 parts by mass; (E) an organosilane of formula (2), R2bSi(OR3)4-b: 0.01 to 100 parts by mass; (F) platinum or a platinum compound: 0.1 to 500 ppm as platinum atoms relative to component (A); and (G) a reaction regulator: 0.01 to 1 parts by mass. A thermal conductive silicone composition including: (A) an organopolysiloxane having at least two alkenyl groups per molecule: 100 parts by mass; (B) an organohydrogen polysiloxane having at least two silicon atom-bonded hydrogen atoms per molecule: such that (the number of Si—H groups in component (B))/(the number of alkenyl groups in component (A)) is 0.5 to 3.0; (C) a filler containing one or more thermal conductive powders: 800 to 20,000 parts by mass; (D) a hydrolyzable organopolysiloxane of formula (1): 20 to 400 parts by mass; (E) an organosilane of formula (2), R2bSi(OR3)4-b: 0.01 to 100 parts by mass; (F) platinum or a platinum compound: 0.1 to 500 ppm as platinum atoms relative to component (A); and (G) a reaction regulator: 0.01 to 1 parts by mass.

IPC Classes  ?

  • C08G 77/04 - Polysiloxanes
  • C08K 3/08 - Metals
  • C08K 3/22 - OxidesHydroxides of metals
  • C08K 5/5419 - Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond

69.

COMPOSITION FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER

      
Application Number 18912771
Status Pending
Filing Date 2024-10-11
First Publication Date 2025-04-24
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Kori, Daisuke
  • Yamamoto, Yasuyuki

Abstract

The present invention is a composition for forming an organic film, containing: (A) a material for forming an organic film; (B) a polymer having a repeating unit represented by the following general formula (1); and (C) a solvent, where W1 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms and having one or more fluorine-containing structures represented by the following formulae (2), and W2 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms. This can provide: a composition for forming an organic film which is excellent in film-formability on a substrate and filling property, suppresses humps in an EBR process, and has an excellent process margin when used for an organic film for a multilayer resist process; a method for forming an organic film, using the composition; a patterning process; and a polymer to be contained in the composition for forming an organic film. The present invention is a composition for forming an organic film, containing: (A) a material for forming an organic film; (B) a polymer having a repeating unit represented by the following general formula (1); and (C) a solvent, where W1 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms and having one or more fluorine-containing structures represented by the following formulae (2), and W2 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms. This can provide: a composition for forming an organic film which is excellent in film-formability on a substrate and filling property, suppresses humps in an EBR process, and has an excellent process margin when used for an organic film for a multilayer resist process; a method for forming an organic film, using the composition; a patterning process; and a polymer to be contained in the composition for forming an organic film.

IPC Classes  ?

  • C08G 59/14 - Polycondensates modified by chemical after-treatment
  • C08G 59/30 - Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen, and nitrogen
  • C08G 59/42 - Polycarboxylic acidsAnhydrides, halides, or low-molecular-weight esters thereof
  • C08G 59/62 - Alcohols or phenols
  • G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
  • H01L 21/033 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or comprising inorganic layers
  • H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
  • H01L 21/311 - Etching the insulating layers
  • H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer

70.

NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, AND METHOD FOR PRODUCING SAME

      
Application Number JP2024036049
Publication Number 2025/084205
Status In Force
Filing Date 2024-10-09
Publication Date 2025-04-24
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Takahashi Kohta
  • Murayama Masaki
  • Hirose Takakazu
  • Ishikawa Takuya
  • Osawa Yusuke
  • Koshikawa Hidenori

Abstract

xx: 0.5 ≤ x ≤ 1.6); the silicon compound particles include a lithium compound; surfaces of the negative electrode active material particles are at least partially covered with a carbon material; the carbon material has a peak originating from the G band between 1530 cm−1and 1590 cm−1; the quantity of the covering carbon material is greater than 0.5% by mass and no greater than 10% by mass; and the carbon material is partly or wholly diamond-like carbon. Due to this cofiguration, a water-based negative electrode slurry produced when a negative electrode of a secondary battery is produced can be stabilized and a negative electrode active material for a nonaqueous electrolyte secondary battery is provided that can improve initial charge and discharge characteristics when used as a negative electrode active material of the secondary battery.

IPC Classes  ?

  • H01M 4/48 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/58 - Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFySelection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates

71.

PERFLUOROPOLYETHER-ORGANOPOLYSILOXANE BLOCK COPOLYMER

      
Application Number 18729114
Status Pending
Filing Date 2022-12-06
First Publication Date 2025-04-24
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Suzuki, Takayuki
  • Goto, Tomoyuki

Abstract

Provided is a perfluoropolyether-organopolysiloxane block copolymer that has a perfluoropolyether group, that allows control of, for example, the number of siloxane units in the molecule, and that has excellent affinity with non-fluorinated organic compounds. A perfluoropolyether-organopolysiloxane block copolymer of the present invention is a perfluoropolyether-organopolysiloxane block copolymer having a perfluoropolyether block and an organopolysiloxane block. The organopolysiloxane block has, as a side chain thereof, one or more groups selected from an aralkyl group and a group having an oxyalkylene unit.

IPC Classes  ?

  • C08G 77/46 - Block- or graft-polymers containing polysiloxane sequences containing polyether sequences
  • C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
  • C08G 77/385 - Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing halogens

72.

Composition For Forming Resist Underlayer Film, Resist Underlayer Film, Method For Manufacturing Resist Underlayer Film, Patterning Process, And Method For Manufacturing Semiconductor Device

      
Application Number 18908930
Status Pending
Filing Date 2024-10-08
First Publication Date 2025-04-24
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Iwamori, Shohei
  • Satoh, Hironori
  • Kori, Daisuke

Abstract

The present invention is a composition for forming a resist underlayer film, containing: (A) a polyether compound containing a repeating unit represented by the following general formula (I); and (B) an organic solvent, where Ar1 represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or the like, R1 represents a substituted or unsubstituted, linear, branched, or cyclic, saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms or a substituted or unsubstituted, linear, branched, or cyclic heteroalkylene group having 1 to 20 carbon atoms, and “n” and “m” each represent an integer of 0 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability. The present invention is a composition for forming a resist underlayer film, containing: (A) a polyether compound containing a repeating unit represented by the following general formula (I); and (B) an organic solvent, where Ar1 represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or the like, R1 represents a substituted or unsubstituted, linear, branched, or cyclic, saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms or a substituted or unsubstituted, linear, branched, or cyclic heteroalkylene group having 1 to 20 carbon atoms, and “n” and “m” each represent an integer of 0 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.

IPC Classes  ?

  • C08G 65/40 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols and other compounds
  • G03F 7/004 - Photosensitive materials
  • G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/16 - Coating processesApparatus therefor
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
  • H01L 21/033 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or comprising inorganic layers
  • H01L 21/3065 - Plasma etchingReactive-ion etching
  • H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks

73.

HEAT-REFLECTING MEMBER, AND METHOD FOR MANUFACTURING GLASS MEMBER HAVING HEAT-REFLECTING LAYER INCLUDED THEREIN

      
Application Number 18937985
Status Pending
Filing Date 2024-11-05
First Publication Date 2025-04-24
Owner
  • SHIN-ETSU QUARTZ PRODUCTS CO., LTD. (Japan)
  • HERAEUS QUARZGLAS GMBH & CO. KG (Germany)
Inventor
  • Yamaguchi, Kazuhiro
  • Fujita, Daiki
  • Harada, Yoshihiro
  • Segawa, Toru
  • Watanabe, Tomonori

Abstract

One aspect is a heat reflective member, a laminated structure in which quartz glass layers are formed on an upper surface and a lower surface of a siliceous sintered powder layer. The heat reflective member has an impermeable layer formed at a portion of the siliceous sintered powder layer at a cut-out end portion of the heat reflective member. The impermeable layer has a thickness at least larger than half of a thickness of the siliceous sintered powder layer and through which a gas or a liquid is prevented from penetrating. A buffer layer is formed between the impermeable layer and the siliceous sintered powder layer next to the impermeable layer and spaced apart from the cut-out end portion. The buffer layer changes in density from the impermeable layer toward the siliceous sintered powder layer.

IPC Classes  ?

  • C03B 19/06 - Other methods of shaping glass by sintering
  • C03B 33/07 - Cutting armoured or laminated glass products
  • C03B 33/08 - Severing cooled glass by fusing

74.

ORGANOPOLYSILOXANE HAVING PHOTODEGRADABLE GROUP

      
Application Number JP2024030354
Publication Number 2025/084003
Status In Force
Filing Date 2024-08-27
Publication Date 2025-04-24
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Anno Shota

Abstract

The present invention provides an organopolysiloxane which is characterized by having one or more photodegradable groups among those represented by general formulae (1) and (2). As a result, the present invention provides an organopolysiloxane which has a photodegradable group and generates an ethylenically unsaturated group when irradiated with light. (In the formulae, R1represents a substituted or unsubstituted alkyl group, a cycloalkyl group, an aralkyl group or an aryl group, and R2 independently represents a hydrogen atom, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group. The line to which a wiggly line is attached indicates an atomic bond.)

IPC Classes  ?

  • C08G 77/14 - Polysiloxanes containing silicon bound to oxygen-containing groups
  • C08G 77/12 - Polysiloxanes containing silicon bound to hydrogen
  • C08G 77/38 - Polysiloxanes modified by chemical after-treatment
  • C08L 83/05 - Polysiloxanes containing silicon bound to hydrogen

75.

ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS

      
Application Number 18816310
Status Pending
Filing Date 2024-08-27
First Publication Date 2025-04-17
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor Fukushima, Masahiro

Abstract

An onium salt consisting of an aromatic ring-bearing sulfonic acid anion and a cation, the anion having an acid labile group-protected hydroxy group and a fluorinated substituent group on the aromatic ring, is provided. A resist film of a chemically amplified resist composition comprising the onium salt has advantages including reduced LWR, high resolution, and collapse resistance when processed by the DUV, EUV or EB lithography.

IPC Classes  ?

  • C07D 333/76 - Dibenzothiophenes
  • C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/24 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a carbon skeleton containing six-membered aromatic rings
  • C07C 321/28 - Sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
  • C07D 307/12 - Radicals substituted by oxygen atoms
  • C07D 327/08 - [b, e]-condensed with two six-membered carbocyclic rings
  • C07D 333/54 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
  • C07D 493/22 - Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains four or more hetero rings
  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - ExposureApparatus therefor

76.

COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR MANUFACTURING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 18890307
Status Pending
Filing Date 2024-09-19
First Publication Date 2025-04-17
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Iwamori, Shohei
  • Satoh, Hironori
  • Kori, Daisuke

Abstract

The present invention is a composition for forming a resist underlayer film, containing: (A) a novolak resin having a repeating unit structure represented by the following general formula (I) and/or (II); and (B) an organic solvent, where R1 is a combination of at least two kinds within a single resin and represents a hydrogen atom, a substituted or unsubstituted, linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted, linear, branched, or cyclic alkenyl group having 2 to 20 carbon atoms, or a substituted or unsubstituted, linear, branched, or cyclic alkynyl group having 2 to 20 carbon atoms, and “n1” represents an integer of 1 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability. The present invention is a composition for forming a resist underlayer film, containing: (A) a novolak resin having a repeating unit structure represented by the following general formula (I) and/or (II); and (B) an organic solvent, where R1 is a combination of at least two kinds within a single resin and represents a hydrogen atom, a substituted or unsubstituted, linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted, linear, branched, or cyclic alkenyl group having 2 to 20 carbon atoms, or a substituted or unsubstituted, linear, branched, or cyclic alkynyl group having 2 to 20 carbon atoms, and “n1” represents an integer of 1 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08G 8/04 - Condensation polymers of aldehydes or ketones with phenols only of aldehydes
  • C08G 8/08 - Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
  • C08G 8/20 - Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
  • C08K 5/13 - PhenolsPhenolates
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/16 - Coating processesApparatus therefor
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

77.

HYDROPHILIC COMPOSITION

      
Application Number JP2024026575
Publication Number 2025/079317
Status In Force
Filing Date 2024-07-25
Publication Date 2025-04-17
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Takagi Kazunori
  • Hirokami Munenao

Abstract

A hydrophilic composition containing (A) 100 mass parts of a hydrophilic copolymer containing structural units represented by formula (1) and structural units represented by formula (2) and (B) 0.001-10 mass parts of a blocked isocyanate silane compound yields a coating film having exceptional hydrophilicity, anti-fogging properties, and water resistance. [In formula (1), R1represents a hydrogen atom or a methyl group, R2each independently represent a C1-6 alkyl group, and n represents an integer of 1-6. In formula (2), R3represents a hydrogen atom or a methyl group, X1represents -NH- or -O-, Z1represents a hydrogen atom, a methyl group, a hydroxyl group, a carboxy group, or an amino group, and m represents an integer of 0-10 (however, when m is 0, Z1 is a hydrogen atom or a methyl group.) An asterisk * represents bonding to an adjacent structural unit.]

IPC Classes  ?

  • C08L 33/26 - Homopolymers or copolymers of acrylamide or methacrylamide
  • C08K 5/544 - Silicon-containing compounds containing nitrogen
  • C09D 133/26 - Homopolymers or copolymers of acrylamide or methacrylamide

78.

CURABLE ORGANOPOLYSILOXANE COMPOSITION FOR RELEASE SHEETS, AND RELEASE SHEET

      
Application Number JP2024035083
Publication Number 2025/079459
Status In Force
Filing Date 2024-10-01
Publication Date 2025-04-17
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Kobayashi Ataru
  • Ihara Toshiaki

Abstract

Disclosed is a curable organopolysiloxane composition which contains the components (A), (B), (C) and (D) described below, does not separate or precipitate an addition reaction control agent even when stored at low temperatures, has excellent low-temperature storage stability, and has excellent pot life at high temperatures. (A) an organopolysiloxane which has an alkenyl group bonded to a silicon atom (B) an organohydrogenpolysiloxane (C) an addition reaction control agent which contains the components (C-1) and (C-2) described below, and is in an amount of 0.06-0.60 part by mass relative to a total of 100 parts by mass of the components (A) and (B), wherein the mass ratio (C-2)/(C-1) of the component (C-2) to the component (C-1) is 0.10-5.00, the component (C-1) is an acetylene alcohol having a boiling point of 150-189°C, and the component (C-2) is a compound having a refractive index of 1.420-1.450 at 25°C and a boiling point of 190°C or higher (D) a platinum group metal-based catalyst

IPC Classes  ?

  • C09K 3/00 - Materials not provided for elsewhere
  • C08L 83/05 - Polysiloxanes containing silicon bound to hydrogen
  • C08L 83/07 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups

79.

NEGATIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR PRODUCING SAME

      
Application Number JP2024035734
Publication Number 2025/079543
Status In Force
Filing Date 2024-10-07
Publication Date 2025-04-17
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Hirose Takakazu
  • Takahashi Kohta
  • Osawa Yusuke
  • Koide Hiroyuki

Abstract

The present invention is a negative electrode active material comprising negative electrode active material particles. The negative electrode active material is characterized in that: the negative electrode active material particles include porous carbon structures; silicon and a silicon oxide are dispersed in the interiors of the porous carbon structures; a low-valent nanosilicon oxide in an amorphous state is dispersed in at least surface-layer portions of the interiors of the porous carbon structures; the low-valent nanosilicon oxide is SiOx, where x is less than 1.0; and nanosilicon with a crystalline structure is dispersed at least in deep layer portions of the interiors of the porous carbon structures, such portions being deeper than where the low-valent nanosilicon oxide is dispersed. Due to this configuration, it is possible to provide a negative electrode active material that can increase capacity while maintaining battery characteristics.

IPC Classes  ?

  • H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
  • C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
  • C01B 33/113 - Silicon oxidesHydrates thereof
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/48 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides

80.

NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND PRODUCTION METHOD THEREFOR

      
Application Number JP2024035758
Publication Number 2025/079547
Status In Force
Filing Date 2024-10-07
Publication Date 2025-04-17
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Takahashi Kohta
  • Hirose Takakazu
  • Ishikawa Takuya
  • Murayama Masaki
  • Osawa Yusuke
  • Koshikawa Hidenori

Abstract

xxx appearing at 2θ=10-30° obtained by X-ray diffraction using Cu-Kα rays and C2 is defined as the peak intensity of the Si (111) surface appearing at 2θ=28°±1°, C2/C1 calculated by a specific method satisfies >C2/C1≥0.01. Thus, it is possible to provide a negative electrode active material that makes it possible to improve cycle characteristics when used as a negative electrode active material for a secondary battery.

IPC Classes  ?

  • H01M 4/48 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids
  • H01M 4/587 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx for inserting or intercalating light metals

81.

SOLBIN

      
Application Number 1849600
Status Registered
Filing Date 2025-02-20
Registration Date 2025-02-20
Owner NISSIN CHEMICAL INDUSTRY CO., LTD. (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Unprocessed plastics in primary form.

82.

NITROGEN-CONTAINING SILANE COMPOUND AND METHOD FOR PRODUCING SAME

      
Application Number 18904552
Status Pending
Filing Date 2024-10-02
First Publication Date 2025-04-17
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor Tonomura, Yoichi

Abstract

A nitrogen-containing silane compound having the general formula (1): A nitrogen-containing silane compound having the general formula (1): wherein R1 represents a hydrogen atom or an unsubstituted monovalent hydrocarbon group, R2 and R3 each independently represent an unsubstituted monovalent hydrocarbon group or a group having general formula (2), A nitrogen-containing silane compound having the general formula (1): wherein R1 represents a hydrogen atom or an unsubstituted monovalent hydrocarbon group, R2 and R3 each independently represent an unsubstituted monovalent hydrocarbon group or a group having general formula (2), —OR5  (2) wherein R5 represents an unsubstituted monovalent hydrocarbon group, R4 represents an unsubstituted divalent hydrocarbon group, A represents a group having general formula (3) or general formula (4): A nitrogen-containing silane compound having the general formula (1): wherein R1 represents a hydrogen atom or an unsubstituted monovalent hydrocarbon group, R2 and R3 each independently represent an unsubstituted monovalent hydrocarbon group or a group having general formula (2), —OR5  (2) wherein R5 represents an unsubstituted monovalent hydrocarbon group, R4 represents an unsubstituted divalent hydrocarbon group, A represents a group having general formula (3) or general formula (4): wherein R6 and R7 represent a monovalent hydrocarbon group in which a hetero atom may be interposed or a triorganosilyl group, and may be bonded to each other to form a ring together with a nitrogen atom to which they are bonded, A nitrogen-containing silane compound having the general formula (1): wherein R1 represents a hydrogen atom or an unsubstituted monovalent hydrocarbon group, R2 and R3 each independently represent an unsubstituted monovalent hydrocarbon group or a group having general formula (2), —OR5  (2) wherein R5 represents an unsubstituted monovalent hydrocarbon group, R4 represents an unsubstituted divalent hydrocarbon group, A represents a group having general formula (3) or general formula (4): wherein R6 and R7 represent a monovalent hydrocarbon group in which a hetero atom may be interposed or a triorganosilyl group, and may be bonded to each other to form a ring together with a nitrogen atom to which they are bonded, wherein R8 represents an unsubstituted monovalent hydrocarbon group or a triorganosilyl group, R9 and R10 represent a divalent hydrocarbon group, and R11 represents C—H or a nitrogen atom.

IPC Classes  ?

  • C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages

83.

Resist Material And Patterning Process

      
Application Number 18909129
Status Pending
Filing Date 2024-10-08
First Publication Date 2025-04-17
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Otomo, Yutaro

Abstract

The present invention is a resist material containing: a base polymer (P) containing a repeating unit (A) containing a reactive group and represented by the following formula (a1) or (a2), and a repeating unit (B) having an acid-decomposable group; a crosslinking agent having a structure represented by the following formula (1); a thermal acid generator; a photodecomposable quencher represented by the following formula (2); and an organic solvent. This can provide: a resist material having little edge roughness, little size variation, excellent resolution, and excellent heat resistance; and a patterning process. The present invention is a resist material containing: a base polymer (P) containing a repeating unit (A) containing a reactive group and represented by the following formula (a1) or (a2), and a repeating unit (B) having an acid-decomposable group; a crosslinking agent having a structure represented by the following formula (1); a thermal acid generator; a photodecomposable quencher represented by the following formula (2); and an organic solvent. This can provide: a resist material having little edge roughness, little size variation, excellent resolution, and excellent heat resistance; and a patterning process.

IPC Classes  ?

  • G03F 7/021 - Macromolecular diazonium compoundsMacromolecular additives, e.g. binders
  • G03F 7/004 - Photosensitive materials

84.

ONIUM SALT TYPE MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS

      
Application Number 18909136
Status Pending
Filing Date 2024-10-08
First Publication Date 2025-04-17
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Fukushima, Masahiro
  • Hatakeyama, Jun
  • Ohashi, Masaki

Abstract

The onium salt type monomer for a chemically amplified resist composition has excellent solvent solubility and a high sensitivity and contrast, and is excellent in lithographic performance such as exposure tolerance (EL), LWR, CDU and depth of focus (DOF), and excellent in resistance to pattern collapse and etch resistance even in fine pattern formation. The onium salt type monomer has the following formula (a). The onium salt type monomer for a chemically amplified resist composition has excellent solvent solubility and a high sensitivity and contrast, and is excellent in lithographic performance such as exposure tolerance (EL), LWR, CDU and depth of focus (DOF), and excellent in resistance to pattern collapse and etch resistance even in fine pattern formation. The onium salt type monomer has the following formula (a).

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/75 - Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton
  • C07C 323/09 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and halogen atoms, or nitro or nitroso groups bound to the same carbon skeleton having sulfur atoms of thio groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
  • C07D 327/08 - [b, e]-condensed with two six-membered carbocyclic rings
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/22 - Esters containing halogen
  • C08F 220/40 - Esters of unsaturated alcohols
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/004 - Photosensitive materials

85.

PHOTOCURABLE SILICONE COMPOSITION

      
Application Number JP2024030129
Publication Number 2025/079344
Status In Force
Filing Date 2024-08-26
Publication Date 2025-04-17
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Kimura Shinji

Abstract

The present invention is a photocurable silicone composition characterized by comprising: (A) an organopolysiloxane represented by general formula (1). (In the formula, n is an integer of 10 or more; R1is independently a methyl group or a phenyl group; and R2is a group represented by general formula (2).) (In the formula, m is an integer of 0-20; R3is independently a methyl group or a phenyl group; Z1is a substituted or unsubstituted divalent organic group having 1-10 carbon atoms; Z2is an oxygen atom or a substituted or unsubstituted divalent organic group having 1-10 carbon atoms; and a wavy line represents a bond.); (B) an organic compound having a (meth)acrylic group and an epoxy group in one molecule and having no alkoxysilyl group; (C) a photoradical polymerization initiator; and (D) a silica powder having a BET specific surface area of 100 m2/g or more. The photocurable silicone composition is also characterized in that, in the component (A), the ratio of the methyl groups bonded to silicon atoms to the phenyl groups bonded to the silicon atoms is 97:3 to 80:20. Due to this configuration, provided is the photocurable silicone composition with which is obtained a cured product having excellent surface curability and deep portion curability, and having a small compression set.

IPC Classes  ?

86.

HYDROPHILIC COPOLYMER AND HYDROPHILIC COMPOSITION

      
Application Number JP2024034040
Publication Number 2025/079422
Status In Force
Filing Date 2024-09-25
Publication Date 2025-04-17
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Takagi Kazunori
  • Hirokami Munenao

Abstract

Provided are a hydrophilic copolymer and a hydrophilic composition including the same, said hydrophilic copolymer including a structural unit (a) that is represented by formula (1) and a structural unit (b) that is represented by formula (2). [In formula (1), R1is a hydrogen atom or a methyl group, R2is –N(R422 (where R424mm–R536mm–R5(where m is an integer from 1 to 50 and R5represents a hydrogen atom or a C1-6 alkyl group), and X1is a divalent linking group, and in formula (2), R3is a hydrogen atom or a methyl group, X2is a divalent linking group, and Y1 represents a group that has a polymerizable unsaturated bond.]

IPC Classes  ?

  • C08F 220/10 - Esters
  • C08F 299/00 - Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers

87.

NEGATIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR PRODUCING SAME

      
Application Number JP2024035773
Publication Number 2025/079551
Status In Force
Filing Date 2024-10-07
Publication Date 2025-04-17
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Hirose Takakazu
  • Takahashi Kohta
  • Osawa Yusuke
  • Koide Hiroyuki

Abstract

The present invention provides a negative electrode active material which has negative electrode active material particles, the negative electrode active material being characterized in that: the negative electrode active material particles each include a porous carbon structure; amorphous low valence nano silicon oxide is dispersed inside the porous carbon structure; the low valence nano silicon oxide includes the states where SiOx:x < 1.0 is satisfied; and the low valence nano silicon oxide has an average particle diameter of 50 nm or less as determined by image processing of a cross-sectional TEM image thereof. As a result, a negative electrode active material which is capable of increasing the capacity while maintaining the battery characteristics is provided.

IPC Classes  ?

  • H01M 4/48 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
  • C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
  • C01B 33/113 - Silicon oxidesHydrates thereof
  • H01M 4/36 - Selection of substances as active materials, active masses, active liquids

88.

ELASTIC FIBER TREATMENT AGENT AND ELASTIC FIBER

      
Application Number JP2024036213
Publication Number 2025/079628
Status In Force
Filing Date 2024-10-10
Publication Date 2025-04-17
Owner
  • TAKEMOTO OIL & FAT CO., LTD. (Japan)
  • SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Nishigawa Takeshi
  • Honda Hiroki
  • Goto Tomoyuki

Abstract

The present invention addresses the problem of providing: an elastic fiber treatment agent capable of reducing friction between fibers and metal and improving stability; and elastic fibers to which the elastic fiber treatment agent is adhered. An elastic fiber treatment agent according to the present invention is characterized by containing a smoothing agent (A) and a urea-modified silicone (B). Elastic fibers according to the present invention are characterized by having adhered thereto an elastic fiber treatment agent containing a smoothing agent (A) and a urea-modified silicone (B).

IPC Classes  ?

  • D06M 15/653 - Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds containing silicon in the main chain modified by isocyanate compounds
  • D01F 11/08 - Chemical after-treatment of man-made filaments or the like during manufacture of synthetic polymers of macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
  • D06M 13/02 - Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials with non-macromolecular organic compoundsSuch treatment combined with mechanical treatment with hydrocarbons
  • D06M 13/144 - AlcoholsMetal alcoholates
  • D06M 15/643 - Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds containing silicon in the main chain
  • D06M 101/38 - Polyurethanes

89.

Stamp component for transferring microstructure

      
Application Number 29845673
Grant Number D1070796
Status In Force
Filing Date 2022-07-08
First Publication Date 2025-04-15
Grant Date 2025-04-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Ogawa, Yoshinori
  • Kondo, Kazunori
  • Tomura, Nobuaki
  • Matsumoto, Nobuaki
  • Sakamoto, Akira
  • Kitagawa, Taichi

90.

Stamp component for transferring microstructure

      
Application Number 29835030
Grant Number D1070795
Status In Force
Filing Date 2022-04-15
First Publication Date 2025-04-15
Grant Date 2025-04-15
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Ogawa, Yoshinori
  • Kondo, Kazunori
  • Tomura, Nobuaki
  • Matsumoto, Nobuaki
  • Sakamoto, Akira
  • Kitagawa, Taichi

91.

OPTICAL ISOLATOR

      
Document Number 03257153
Status Pending
Filing Date 2023-04-27
Open to Public Date 2025-04-14
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Watanabe, Toshiaki

Abstract

The present invention provides an optical isolator with multiple stages that includes: an optical element including at least a first polarizer, a first Faraday rotator, a second polarizer, a third polarizer, a second Faraday rotator, and a fourth polarizer in sequence in a direction in which light travels; and at least one permanent magnet configured to apply a magnetic field to the first Faraday rotator and the second Faraday rotator. A relative angle between a transmitted light polarization axis of the second polarizer and a transmitted light polarization axis of the third polarizer is equal to or more than 0.1 degrees. The optical isolator having high light-blocking performance is thus provided.

IPC Classes  ?

  • G02B 27/28 - Optical systems or apparatus not provided for by any of the groups , for polarising

92.

HYDROPHILIC COPOLYMER AND HYDROPHILIC COMPOSITION

      
Application Number 18730141
Status Pending
Filing Date 2022-12-16
First Publication Date 2025-04-10
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Takagi, Kazunori
  • Hirokami, Munenao

Abstract

A hydrophilic copolymer comprising a constituent unit (a) represented by formula (1) and a constituent unit (b) represented by formula (2) is used to impart a coating film excelling in hydrophilicity, antifogging, and water resistance. A hydrophilic copolymer comprising a constituent unit (a) represented by formula (1) and a constituent unit (b) represented by formula (2) is used to impart a coating film excelling in hydrophilicity, antifogging, and water resistance. A hydrophilic copolymer comprising a constituent unit (a) represented by formula (1) and a constituent unit (b) represented by formula (2) is used to impart a coating film excelling in hydrophilicity, antifogging, and water resistance. (In formula (1), R1 represents a hydrogen atom or methyl group, each R2 independently represents a hydrogen atom or C1-6 alkyl group, and X1 represents a divalent linking group. In formula (2), R3 represents a hydrogen atom or methyl group, R4 and R5 each independently represent a C1-10 alkyl group or C6-10 aryl group, X2 represents a bivalent linking group, n represents an integer from 1 to 3, and the asterisk (*) represents a bond to an adjacent constituent unit.)

IPC Classes  ?

  • C08F 220/34 - Esters containing nitrogen
  • C08F 8/30 - Introducing nitrogen atoms or nitrogen-containing groups
  • C08F 8/42 - Introducing metal atoms or metal-containing groups
  • C08F 222/10 - Esters
  • C08F 230/08 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
  • C09D 139/00 - Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogenCoating compositions based on derivatives of such polymers

93.

THERMALLY CONDUCTIVE SILICONE COMPOSITION AND PRODUCTION METHOD THEREFOR

      
Application Number 18835087
Status Pending
Filing Date 2023-01-16
First Publication Date 2025-04-10
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor Yamada, Kunihiro

Abstract

A thermally conductive silicone composition comprising (A) a crosslinked silicone gel, (B) a silicone oil containing neither an aliphatic unsaturated bond nor an SiH group, (C) a thermally conductive filler having an average particle diameter of 0.01-100 μm, the amount of which is 10-2,000 parts by mass per 100 parts by mass of the sum of the (A) and (B) components, and (D) gallium or a gallium alloy having a melting point of −20 to 100° C., the amount of which is 1,000-10,000 parts by mass per 100 parts by mass of the sum of the (A) and (B) components. A thermally conductive silicone composition comprising (A) a crosslinked silicone gel, (B) a silicone oil containing neither an aliphatic unsaturated bond nor an SiH group, (C) a thermally conductive filler having an average particle diameter of 0.01-100 μm, the amount of which is 10-2,000 parts by mass per 100 parts by mass of the sum of the (A) and (B) components, and (D) gallium or a gallium alloy having a melting point of −20 to 100° C., the amount of which is 1,000-10,000 parts by mass per 100 parts by mass of the sum of the (A) and (B) components. The thermally conductive silicone composition has a high thermal conductivity and is excellent in terms of applicability and dislocation resistance.

IPC Classes  ?

  • C09D 183/08 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
  • C08G 77/08 - Preparatory processes characterised by the catalysts used
  • C08G 77/12 - Polysiloxanes containing silicon bound to hydrogen
  • C08G 77/18 - Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
  • C08G 77/20 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups
  • C08K 3/08 - Metals
  • C08K 3/22 - OxidesHydroxides of metals
  • C09D 7/20 - Diluents or solvents
  • C09D 7/61 - Additives non-macromolecular inorganic
  • C09K 5/06 - Materials undergoing a change of physical state when used the change of state being from liquid to solid or vice-versa
  • C09K 5/14 - Solid materials, e.g. powdery or granular

94.

Composition For Forming Metal-Containing Film And Patterning Process

      
Application Number 18893066
Status Pending
Filing Date 2024-09-23
First Publication Date 2025-04-10
Owner SHIN-ETSU CHEMICAL CO., LTD. (Japan)
Inventor
  • Kobayashi, Naoki
  • Ishiwata, Kenta
  • Kori, Daisuke
  • Nagamachi, Nobuhiro

Abstract

The present invention is a composition for forming a metal-containing film, containing: (A) a metal compound containing at least one kind of metal selected from the group consisting of Ti, Zr, and Hf; (B) a crosslinking agent containing, per molecule, 2 or more and 4 or fewer cyclic ether structures having 2 to 13 carbon atoms; and (C) a solvent. This can provide: a composition for forming a metal-containing film having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; and a patterning process in which the composition is used.

IPC Classes  ?

  • C08K 5/057 - Metal alcoholates
  • C08G 59/02 - Polycondensates containing more than one epoxy group per molecule
  • C08G 65/18 - Oxetanes
  • G03F 7/004 - Photosensitive materials
  • G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/16 - Coating processesApparatus therefor

95.

FLUORENE SKELETON-CONTAINING POLYMER

      
Application Number 18899399
Status Pending
Filing Date 2024-09-27
First Publication Date 2025-04-10
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Kawaguchi, Yugo
  • Maruyama, Hitoshi
  • Omori, Hiroto

Abstract

The fluorene skeleton-containing polymer can form a film more excellent in heat resistance than that obtained from a conventional fluorene skeleton-containing polymer containing a siloxane structure. The polymer has a silphenylene skeleton, a polysiloxane skeleton, and a fluorene skeleton in a main chain, and contains a polyhydric alcohol structure in a side chain.

IPC Classes  ?

  • C08G 77/52 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages containing aromatic rings

96.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18902894
Status Pending
Filing Date 2024-09-30
First Publication Date 2025-04-10
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Hatakeyama, Jun
  • Fujiwara, Takayuki

Abstract

A resist composition comprising a bisonium salt containing a divalent anion having an arylsulfonate anion structure linked to an aromatic group having an iodine atom or a bromine atom and a sulfonimide anion structure or a sulfonamide anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.

IPC Classes  ?

  • G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08K 5/03 - Halogenated hydrocarbons aromatic
  • C08K 5/42 - Sulfonic acidsDerivatives thereof
  • C08K 5/45 - Heterocyclic compounds having sulfur in the ring
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - ExposureApparatus therefor

97.

ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS

      
Application Number 18903533
Status Pending
Filing Date 2024-10-01
First Publication Date 2025-04-10
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor Fukushima, Masahiro

Abstract

An onium salt monomer containing an aromatic sulfonic acid anion having a vinyl-substituted aromatic ring is provided as well as a polymer comprising repeat units derived from the monomer. A chemically amplified resist composition comprising the polymer has advantages including high sensitivity, high contrast, improved lithography properties, e.g., EL, LWR, CDU and DOF, collapse resistance during fine pattern formation, and etch resistance after development.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07C 25/18 - Polycyclic aromatic halogenated hydrocarbons
  • C07C 309/43 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having at least one of the sulfo groups bound to a carbon atom of a six-membered aromatic ring being part of a condensed ring system
  • C07C 309/58 - Carboxylic acid groups or esters thereof
  • C07C 309/73 - Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton to carbon atoms of non-condensed six-membered aromatic rings
  • C07C 311/21 - Sulfonamides having sulfur atoms of sulfonamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the sulfonamide groups bound to a carbon atom of a six-membered aromatic ring
  • C07C 323/09 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and halogen atoms, or nitro or nitroso groups bound to the same carbon skeleton having sulfur atoms of thio groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
  • C07D 327/08 - [b, e]-condensed with two six-membered carbocyclic rings
  • C07D 333/76 - Dibenzothiophenes
  • C07D 493/08 - Bridged systems
  • C08F 22/14 - Esters having no free carboxylic acid groups
  • C08F 22/24 - Esters containing sulfur
  • G03F 7/20 - ExposureApparatus therefor

98.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18904577
Status Pending
Filing Date 2024-10-02
First Publication Date 2025-04-10
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Hatakeyama, Jun
  • Fujiwara, Takayuki

Abstract

A resist composition comprising a bisonium salt containing a divalent anion having a sulfonate anion structure having a fluorine atom or a trifluoromethyl group at the position a or β and linked to an aromatic group having an iodine atom or a bromine atom and a carboxylate anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - ExposureApparatus therefor

99.

COMPOSITION CONTAINING INORGANIC-ORGANIC HYBRID COMPOUND

      
Application Number 18724027
Status Pending
Filing Date 2022-12-27
First Publication Date 2025-04-10
Owner
  • Shin-Etsu Chemical Co., Ltd. (Japan)
  • JAPAN VAM & POVAL CO., LTD. (Japan)
Inventor
  • Sawa, Haruo
  • Oharuda, Akinobu
  • Kimura, Yoshihiro
  • Kanesato, Shuhei

Abstract

Provided is a novel composition, in particular, a composition comprising an inorganic-organic hybrid compound. The composition comprises an inorganic-organic hybrid compound and a hydrophobic resin, wherein the inorganic-organic hybrid compound comprises a polyvinyl alcohol-based resin to which a metal oxide is chemically bonded.

IPC Classes  ?

  • H01M 50/446 - Composite material consisting of a mixture of organic and inorganic materials
  • C08F 8/44 - Preparation of metal salts or ammonium salts
  • C25B 13/07 - DiaphragmsSpacing elements characterised by the material based on inorganic materials based on ceramics
  • C25B 13/08 - DiaphragmsSpacing elements characterised by the material based on organic materials
  • H01M 50/403 - Manufacturing processes of separators, membranes or diaphragms
  • H01M 50/414 - Synthetic resins, e.g. .thermoplastics or thermosetting resins
  • H01M 50/417 - Polyolefins
  • H01M 50/434 - Ceramics
  • H01M 50/449 - Separators, membranes or diaphragms characterised by the material having a layered structure
  • H01M 50/489 - Separators, membranes, diaphragms or spacing elements inside the cells, characterised by their physical properties, e.g. swelling degree, hydrophilicity or shut down properties

100.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Application Number 18903164
Status Pending
Filing Date 2024-10-01
First Publication Date 2025-04-10
Owner Shin-Etsu Chemical Co., Ltd. (Japan)
Inventor
  • Hatakeyama, Jun
  • Fujiwara, Takayuki

Abstract

A resist composition comprising a bisonium salt containing a divalent anion having a sulfonate anion structure having a fluorine atom or a trifluoromethyl group at α- or β-position and linked to an aromatic group having an iodine atom or a bromine atom and a sulfonimide anion structure or a sulfonamide anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08K 5/03 - Halogenated hydrocarbons aromatic
  • C08K 5/42 - Sulfonic acidsDerivatives thereof
  • C08K 5/45 - Heterocyclic compounds having sulfur in the ring
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - ExposureApparatus therefor
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