A hydrophilic composition that contains (A) 100 parts by mass of a hydrophilic copolymer containing structural units represented by formula (1) and structural units represented by formula (2), and (B) 0.001-10 parts by mass of a blocked isocyanate silane compound, yields a coating film having exceptional hydrophilicity, anti-fogging properties, and water resistance.
A hydrophilic composition that contains (A) 100 parts by mass of a hydrophilic copolymer containing structural units represented by formula (1) and structural units represented by formula (2), and (B) 0.001-10 parts by mass of a blocked isocyanate silane compound, yields a coating film having exceptional hydrophilicity, anti-fogging properties, and water resistance.
A hydrophilic composition that contains (A) 100 parts by mass of a hydrophilic copolymer containing structural units represented by formula (1) and structural units represented by formula (2), and (B) 0.001-10 parts by mass of a blocked isocyanate silane compound, yields a coating film having exceptional hydrophilicity, anti-fogging properties, and water resistance.
(R1 represents a hydrogen atom or a methyl group, R2 represents a C1-6 alkyl group, X1 represents —NH— or —O—, n represents an integer of 1-6, Y1− represents a monovalent anion, R3 represents a hydrogen atom or a methyl group, X2 represents —NH— or —O—, Y2 represents a monovalent functional group selected from the group consisting of hydrogen atoms, hydroxyl groups, carboxy groups, amino groups, acid anhydride groups, and alkoxysilyl groups, and m represents an integer of 0-10. However, when m is 0, Y2 is a hydrogen atom. An asterisk * represents bonding to an adjacent structural unit.)
C08G 77/458 - Polymères séquencés ou greffés contenant des segments de polysiloxanes contenant des segments de polymères contenant de l'azote contenant des segments de polyuréthanes
In the production of a compound having formula (3) or (3′):
In the production of a compound having formula (3) or (3′):
wherein R10 is a group having formula (4):
In the production of a compound having formula (3) or (3′):
wherein R10 is a group having formula (4):
wherein R4′ and R5′ each are a hydrocarbon group or the like, and X′ is a single bond or the like, by reacting an amine having formula (1) or (1′):
In the production of a compound having formula (3) or (3′):
wherein R10 is a group having formula (4):
wherein R4′ and R5′ each are a hydrocarbon group or the like, and X′ is a single bond or the like, by reacting an amine having formula (1) or (1′):
wherein R1, R2, and R3 each are a hydrocarbon group, R4 and R5 each are H or the like, X is a single bond or the like, and n is 1-3, with a haloalkoxysilane having formula (2):
In the production of a compound having formula (3) or (3′):
wherein R10 is a group having formula (4):
wherein R4′ and R5′ each are a hydrocarbon group or the like, and X′ is a single bond or the like, by reacting an amine having formula (1) or (1′):
wherein R1, R2, and R3 each are a hydrocarbon group, R4 and R5 each are H or the like, X is a single bond or the like, and n is 1-3, with a haloalkoxysilane having formula (2):
wherein R7, R8, and R9 each are a hydrocarbon group, Y is Cl or the like, and m is 0-2, a secondary amine having formula (5):
In the production of a compound having formula (3) or (3′):
wherein R10 is a group having formula (4):
wherein R4′ and R5′ each are a hydrocarbon group or the like, and X′ is a single bond or the like, by reacting an amine having formula (1) or (1′):
wherein R1, R2, and R3 each are a hydrocarbon group, R4 and R5 each are H or the like, X is a single bond or the like, and n is 1-3, with a haloalkoxysilane having formula (2):
wherein R7, R8, and R9 each are a hydrocarbon group, Y is Cl or the like, and m is 0-2, a secondary amine having formula (5):
wherein R11 is a branched or cyclic saturated hydrocarbon group in which C bonded to N is branched, and R12 is a hydrocarbon group or the like (exclusive of a group of R11), is used.
The purpose of the present invention is to provide an optical system device capable of detecting abnormality such as breakage of an optical element. This optical system device is formed so as to comprise: an optical element 1 comprising a first surface 11 and a second surface 12, and having a functional surface that exerts an optical function on at least one of the first surface 11 and the second surface 12; a housing part 2 that forms a housing 20 together with the optical element 1; a main light irradiation unit 3 disposed in the housing 20 and having a light source for irradiating the first surface 11 of the optical element 1 with main light; a sub-light irradiation unit 4 having a light source for irradiating the optical element 1 with sub-light having a wavelength different from that of the main light; and a light detection means 5 for detecting light transmitted through or reflected by the optical element 1.
x1-x1-x layer (0≤x<1) on the silicon epitaxial layer. Thus provided is a high-quality, efficiently manufactured Ge-containing substrate having an Si substrate and a Ge-containing layer.
C30B 29/10 - Composés inorganiques ou compositions inorganiques
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H10D 30/60 - Transistors à effet de champ à grille isolée [IGFET]
A method for producing silicon single crystal by CZ method using a cusp magnetic field formed by upper and lower coils coil provided in pulling furnace, the silicon single crystal is pulled up in a straight-body step by setting a rotational rate of the silicon single crystal to 7 rpm or more and 12 rpm or less, rotational rate of a quartz crucible to 1.0 rpm or less, position of a magnetic field minimum plane of the cusp magnetic field in a range of 10 mm downward to 5 mm upward from a raw-material melt surface, and intensity of magnetic field of cusp magnetic field at intersection of plane having same height as magnetic field minimum plane and inner wall of quartz crucible from 800 to 1200 G. Method for efficiently producing silicon single crystal having lower oxygen concentration and better in-plane distribution of oxygen concentration compared to conventional techniques.
C30B 30/04 - Production de monocristaux ou de matériaux polycristallins homogènes de structure déterminée, caractérisée par l'action de champs électriques ou magnétiques, de l'énergie ondulatoire ou d'autres conditions physiques spécifiques en utilisant des champs magnétiques
C30B 15/30 - Mécanismes pour faire tourner ou pour déplacer soit le bain fondu, soit le cristal
The radically polymerizable group-containing cyclic organosiloxane represented by formula (1) has a low viscosity, and gives a cured product having excellent hardness, impact resistance and adhesion to a substrate and having a small curing shrinkage. In the formula, each R1independently represents a monovalent hydrocarbon group; each R2independently represents a monovalent hydrocarbon group or a hydrogen atom; R3 represents a hydrogen atom or a methyl group; A represents a divalent hydrocarbon group having 1-10 carbon atoms; n represents an integer of 2-6; m represents an integer of 0-4; and the total of n+m is 4-6. The arrangement of the siloxane units in the parentheses may be arbitrary.
C08F 22/20 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle
C08F 30/08 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et contenant du phosphore, du sélénium, du tellure ou un métal contenant un métal contenant du silicium
7.
RADICALLY-POLYMERIZABLE-GROUP-CONTAINING CYCLIC ORGANOSILOXANE DERIVATIVE, METHOD FOR PRODUCING SAME, AND CURABLE COMPOSITION CONTAINING SAME
A radically-polymerizable-group-containing cyclic organosiloxane derivative represented by formula (1) has excellent fluidity and yields a cured product having excellent hardness, impact resistance, and adhesion to a substrate, and little curing shrinkage. (In the formula, R1each independently is a monovalent hydrocarbon group, Z each independently is a group represented by formula (2) or a hydrogen atom, one or more of Z is a group represented by formula (2), X is a divalent hydrocarbon group in which an oxygen atom may be interposed, p each independently is an integer of 2-5, q each independently is an integer of 1-4, and n is an integer of 0-50. The arrangement of siloxane units in parentheses may be arbitrary.) (In the formula, R2 is a hydrogen atom or a methyl group, A is a C1-10 divalent hydrocarbon group, and the broken line represents a bond.)
C08F 22/20 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle
C08F 2/46 - Polymérisation amorcée par énergie ondulatoire ou par rayonnement corpusculaire
C08F 30/08 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et contenant du phosphore, du sélénium, du tellure ou un métal contenant un métal contenant du silicium
8.
ORGANOPOLYSILOXANE AND COSMETIC PREPARATION CONTAINING SAME
Provided is an organopolysiloxane represented by formula (1) which is excellent in terms of the property of dispersing silicone oils and the like and dispersing particles and attains excellent long-term dispersion stability, wherein, when the organopolysiloxane is contained in a cosmetic preparation, the cosmetic preparation exhibits satisfactorily spreadability and blendability with the skin, no limitations on silicone oil content, and excellent long-term stability. [In the formula, R1moieties are each independently a monovalent organic group selected from among C1-C20 alkyl groups, C6-C15 aryl groups, C7-C15 aralkyl groups, and -Q-O-R4; R2 is a hydroxystearic acid derivative represented by formula (2) (wherein X represents a hydrogen atom or a monovalent cation, n is 2-22, and m is 1-20); and a is 0-100, b is 0-10, c is 0-5, d is 0 or greater, e is 0 or greater, and f and g are numbers satisfying f+g=2+d+e×2, with the proviso that both b and g are not 0].
Provided is a UV-curable silicone composition for stereolithography, the UV-curable silicone composition containing: (A) an organopolysiloxane having, per molecule, two or more radically polymerizable group-containing groups each bonded to a silicon atom via an oxygen atom directly bonded to the silicon atom (excluding those containing a heteroatom other than an oxygen atom); (B) hydrophobic silica particles having an average particle size of 10-1,000 nm and having a hydrophobicity of 60% or more as measured by a methanol titration method; and (C) a photopolymerization initiator, wherein when the composition is irradiated with ultraviolet light having a wavelength of 405 nm at 25°C at a dose of 8,000 mJ/cm2, and then cured for 24 hours in an environment of 85°C and 85% RH to obtain a cured product having a thickness of 2.0 mm, the cured product has a tensile strength of 4.5 MPa or more and an elongation at break of 300% or more.
C08F 299/08 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires à partir de polycondensats non saturés à partir de polysiloxanes
B29C 64/106 - Procédés de fabrication additive n’utilisant que des matériaux liquides ou visqueux, p. ex. dépôt d’un cordon continu de matériau visqueux
The present invention is a method for manufacturing an SiGe substrate provided with an SiGe layer on the main surface of a silicon substrate, the method being characterized in that the SiGe layer is grown on the main surface of the silicon substrate by using, as the silicon substrate, a silicon substrate having an off angle of 0.1° to 0.7° on the main surface thereof. Thereby provided are: a method for manufacturing an SiGe substrate in which defects on the surface of an SiGe layer, in particular cross-hatch-like defects, are suppressed; and an SiGe substrate.
C30B 25/18 - Croissance d'une couche épitaxiale caractérisée par le substrat
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
04 - Huiles et graisses industrielles; lubrifiants; combustibles
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler
19 - Matériaux de construction non métalliques
Produits et services
Organosilanes; organopolysiloxanes; glaziers’ putty; silanes; silane coupling agents; silicones; silicone compounds; silicone-based adhesives, other than stationery or household purposes; silicone resins; silicone adhesives; silicone modified epoxy resins; other chemicals; transmission fluid; plastic adhesives not for stationery or household purposes; groundwood pulp or chemical pulps for manufacturing purposes; additives for plastics; additives for cosmetics; thermal insulation coating agents for molds; plastics [raw materials]; silicone coatings for optical fibers; glue and adhesives for industrial purposes; emulsifiers for industrial purposes; flour and starch for industrial purposes; curing agents; higher fatty acids; reagent paper [not for medical purposes]; chemical compositions for developing and printing photographs; defoaming agents; plant growth regulating preparations; catalysts; artificial sweeteners; aqueous emulsions; foam stabilizer; detergents for use in manufacturing processes; textile treating agents; resin encapsulant for solar cell modules; priming putty; paint additives; ceramic glazings; emulsifiers; silicones in emulsion liquid form (chemicals); milk ferments for chemical purposes; cultures of microorganisms, other than for medical and veterinary use; ungluing preparations; mold release agents for release paper; junction coating silicone resins for semiconductors; fertilizers; non-metallic minerals; ceramic compounds for powder metallurgy (fine grains and powders); dielectic silicone compounds; mould-release preparations; water repellants; one component liquid silicone; two component liquid silicone; heat transfer fluids; silicone oils. Silicone lubricants; lubricating grease; industrial grease; lubricating fluids; vacuum pump fluids; industrial silicone greases and lubricants; non- mineral oils and greases for industrial purposes [not for fuel]; mineral oils and greases for industrial purposes [not for fuel]; industrial oil. Silicone rubber; silicone rubber sheets; silicone rubber compounds; heat- shrinkable silicone rubber tubing; liquid silicone molding rubber compounds; heat cured silicone rubbers and rubber compounds; one component RTV silicone rubbers and rubber compounds; two component RTV silicone rubbers and rubber compounds; one component LTV silicone rubbers and rubber compounds; two component LTV silicone rubbers and rubber compounds; fluorosilicone rubber compounds; liquid type silicone rubber for injection molding; heat-dissipating silicone rubbers; electric conductive silicone rubbers; other silicone rubbers; electrical insulating paints; other electrical insulating paints; silicone semi-worked products; plastic semi-worked products; one component RTV silicone rubbers; rubber [raw or semi-worked]; silicone rubber sheets for solar cells and solar module encapsulation; flame-retardant and heat-resistant silicone rubber sheets for solar cells and solar module encapsulation; synthetic resin semi-worked products; plastic film, other than for wrapping; silicone rubber sheets, other than for wrapping; electrical insulating materials; chemical fiber, not for textile use; plastic sheeting for agricultural purposes; one component silicone rubbers and rubber compounds; two component silicone rubbers and rubber compounds; adhesive tapes, other than stationery and not for medical or household purposes. Silicone filling and sealing materials for building or construction; silicone sealing materials for building or construction; silicone coating materials for building or construction; silicone lining materials for building or construction; other silicone materials for building or construction; silicone sealing materials with radiation shielding effect for construction or civil engineering; plastic adhesive sheets for use in repairing agricultural canals; plastic building materials; synthetic building materials; asphalt, and asphalt building or construction materials; rubber building or construction materials; plaster for building purposes; lime building or construction materials; building or construction materials of plaster.
12.
COMPOSITION FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER
The present invention is a polymer having a repeating unit represented by the following formula (B1).
The present invention is a polymer having a repeating unit represented by the following formula (B1).
The present invention is a polymer having a repeating unit represented by the following formula (B1).
In the formula, R1 represents a single bond or a divalent organic group having 1 to 6 carbon atoms, R2 represents a divalent organic group having 1 to 6 carbon atoms, R3 represents a divalent organic group having 1 to 30 carbon atoms and optionally having an oxygen atom, and W1 represents a fluorine-containing group. The polymer can provide a composition for forming an organic film that has excellent film formability (in-plane uniformity) on a substrate (a wafer) and filling properties and excellent hump-reducing properties in an EBR process, and that can form an organic film having excellent process margin when used as an organic film for a multilayer resist.
C08G 75/045 - Polythioéthers à partir de composés mercapto ou de leurs dérivés métalliques à partir de composés mercapto et de composés insaturés
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
A thickening agent containing the reaction product of (A) one or more isocyanurate skeleton-containing polyisocyanates and (B) one or more amino-modified silicones represented by formula (1) (therein, each R1independently represents a monovalent hydrocarbon group having 1-12 carbon atoms or an amino group represented by formula (2) (therein, Q represents a divalent group that has 2-8 carbon atoms and optionally contains therein a divalent amino group represented by -NH-), with at least one R1 in formula (1) being an amino group represented by formula (2); a is an integer of 0-100; b is an integer of 0-5; and c is an integer of 0-5), said thickening agent exhibiting excellent solubility in silicone oils and organic oils, and being capable of inducing the gelation thereof.
C08G 18/79 - Polyisocyanates ou polyisothiocyanates contenant des hétéro-atomes autres que l'azote, l'oxygène ou le soufre de l'isocyanate ou de l'isothiocyanate de l'azote caractérisés par le polyisocyanate utilisé, celui-ci contenant des groupes formés par oligomérisation d'isocyanates ou d'isothiocyanates
Provided is an oily thickener containing (A) an organic modified clay mineral, (B) a silicone surfactant having an alkyl branched chain, and (C) a silicone oil having a C6-18 alkyl group (however, excluding component (B)). The oily thickener thickens compositions containing an oily component, can be blended easily into a variety of cosmetic systems, and thickens compositions containing an oily component.
A61K 8/892 - Polysiloxanes saturés, p. ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe hydroxyle, p. ex. diméthiconol
15.
METHOD FOR MEASURING OXYGEN CONCENTRATION OF OXYGEN ATOMIC LAYER
The present invention provides a method for measuring the oxygen concentration of an oxygen atomic layer of an epitaxial wafer in which the oxygen atomic layer and a single crystal silicon epitaxial layer on the oxygen atomic layer are formed on a silicon single crystal substrate. The method includes: creating in advance a calibration curve between the oxygen concentration of the oxygen atomic layer of an epitaxial wafer for a preliminary test and the band edge emission intensity of the epitaxial wafer for the preliminary test as determined by a photoluminescence method or a cathode luminescence method; and measuring the oxygen concentration of an oxygen atomic layer of an epitaxial wafer to be measured from the measurement result of the band edge emission intensity of the epitaxial wafer to be measured using the calibration curve. As a result, there is provided a method for measuring the oxygen concentration of an oxygen atomic layer in an epitaxial wafer in a stable and simple way in a non-destructive manner.
G01N 21/62 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente
G01N 23/2258 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’ions incidents, p. ex. des faisceaux de protons en mesurant l’émission d’ions secondaires, p. ex. spectrométrie de masse à ionisation secondaire [SIMS]
G01N 27/62 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'ionisation des gaz, p. ex. des aérosolsRecherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant les décharges électriques, p. ex. l'émission cathodique
The present invention is a production method for an SiGe substrate that involves growing an SiGe layer on a silicon substrate. The production method is characterized in that growth of the SiGe layer is begun at a temperature that is at or above room temperature and at or below the lowest glass transition temperature of the most stable structure at the surface of the silicon substrate in accordance with the crystal plane orientation at the surface of the silicon substrate, and the SiGe layer is grown as the temperature is raised above the lowest glass transition temperature. The present invention thereby provides a method for producing a high-quality SiGe substrate that has a good-quality SiGe layer formed on a silicon substrate.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
A reflective photomask blank including a substrate, a multilayer reflection film on the substrate that reflects exposure light being light in extreme ultraviolet range, a protection film on the multilayer reflection film, a light absorbing film in contact with the protection film that absorbs the exposure light, and a hard mask film in contact with the light absorbing film is provided. The protection film consists of a first layer provided at the substrate-side, and a second layer provided at the side remote from the substrate, the second layer is composed of a material resistant to dry etching capable of etching of the light absorbing film, the light absorbing film has a phase shift function and is formed of a single layer or multiple layers, and the single layer and each layer constituting the multiple layers are composed of a material containing ruthenium as a main component.
G03F 1/20 - Masques ou masques vierges d'imagerie par rayonnement d'un faisceau de particules chargées [CPB charged particle beam], p. ex. par faisceau d'électronsLeur préparation
G03F 1/78 - Création des motifs d'un masque par imagerie par un faisceau de particules chargées [CPB charged particle beam], p. ex. création des motifs d'un masque par un faisceau d'électrons
A manufacturing method of porous glass base material for optical fiber with suppressed characteristic fluctuation in the longitudinal direction is provided. A manufacturing method of optical fiber base material by the VAD method includes: detecting a tip position of a porous glass base material during deposition; controlling the pull-up speed to keep the tip position constant; in an early stage of deposition, a target pull-up speed is set for each deposition time, and a raw material gas flow rate to the burner is adjusted and corrected at a predetermined correction interval to achieve the target pull-up speed, thereby depositing while gradually changing the pull-up speed until a predetermined time; in a steady state, the deposition is performed such that the pull-up speed is kept constant to form the porous glass base material; and the porous glass base material is dehydrated and vitrified into transparent glass in a heating furnace.
C03B 37/018 - Fabrication d'ébauches d'étirage de fibres ou de filaments obtenues totalement ou partiellement par des moyens chimiques par dépôt de verre sur un substrat de verre, p. ex. par dépôt chimique en phase vapeur
The present invention is a photosensitive resin composition for absorbing blue LED light that has been transmitted through a cured photoresist film containing quantum dots capable of emitting red or green fluorescence, the composition containing: (A) an acrylic resin having a (meth)acryloyl group in a side chain; (B) a dye having a maximum absorption wavelength at any wavelength of 490 to 430 nm; (C) an oxime-based photo-radical generator; (D) a surfactant; and (E) a solvent. This can provide: a photosensitive resin composition capable of easily forming a film having high lithography resolution and favorable blue light absorption property; a photosensitive resin film and a photosensitive dry film obtained by using the photosensitive resin composition; patterning processes using these; and displays obtained by using the photosensitive resin composition.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Provided are a titanium oxide particle-metal particle composition having a higher photocatalytic activity than before, and exhibiting a high antimicrobial property regardless of whether or not it is under light irradiation; and a method for producing such composition. The composition contains two kinds of particles which are:
(i) titanium oxide particles with the surfaces thereof being modified by an iron component and a silicon component that are not solid-dissolved in the titanium oxide particles; and
(ii) antimicrobial metal-containing metal particles.
B22F 1/12 - Poudres métalliques contenant des particules non métalliques
B22F 1/16 - Particules métalliques revêtues d'un non-métal
B22F 9/24 - Fabrication des poudres métalliques ou de leurs suspensionsAppareils ou dispositifs spécialement adaptés à cet effet par un procédé chimique avec réduction de mélanges métalliques à partir de mélanges métalliques liquides, p. ex. de solutions
The present invention is an epitaxial wafer, including an epitaxial film of a semiconductor material different from silicon being formed on a silicon substrate, in which the epitaxial film has a film thickness of less than 1 at a wafer outer-peripheral portion when a film thickness at a center of the wafer is defined as 1. Thereby, the epitaxial wafer having a heteroepitaxial film with few defects without dependence on a dopant concentration or a variety of a silicon wafer is provided.
C30B 25/18 - Croissance d'une couche épitaxiale caractérisée par le substrat
H10D 62/832 - Corps semi-conducteurs, ou régions de ceux-ci, de dispositifs ayant des barrières de potentiel caractérisés par les matériaux étant des matériaux du groupe IV, p. ex. Si dopé B ou Ge non dopé étant des matériaux du groupe IV comprenant deux éléments ou plus, p. ex. SiGe
22.
THERMALLY CONDUCTIVE SILICONE POTTING COMPOSITION AND CURED PRODUCT THEREOF
[Problem] To provide a thermally conductive silicone potting composition that has low viscosity and high flowability in spite of containing a large amount of a thermally conductive filler, is capable of flowing into a minute space, and exhibits a desired thermal conductivity after being cured. [Solution] The thermally conductive silicone potting composition comprises: (A) 100 parts by mass of a linear organopolysiloxane having, on average, 0.5 to 1.8 alkenyl groups bonded to a silicon atom at a molecular chain terminal per molecule; (B) 500-2,000 parts by mass of a thermally conductive filler; (C) 0.1 to 100 parts by mass of an organohydrogensiloxane having at least two SiH groups in one molecule; and (D) a hydrosilylation reaction catalyst.
An isocyanurate skeleton-containing organopolysiloxane composed of: an isocyanurate skeleton represented by formula (1) (therein, Q is a divalent hydrocarbon group having 2-10 carbon atoms, X is a divalent group that has 2-8 carbon atoms and optionally contains therein a divalent amino group represented by -NH-, n is an integer of 1-5, and * is a free radical that bonds to the * moiety in formula (2), (3), (4), or (5)) and one or more chains selected from among organopolysiloxane chains represented by formulas (2), (3), (4), and (5).
C08G 18/79 - Polyisocyanates ou polyisothiocyanates contenant des hétéro-atomes autres que l'azote, l'oxygène ou le soufre de l'isocyanate ou de l'isothiocyanate de l'azote caractérisés par le polyisocyanate utilisé, celui-ci contenant des groupes formés par oligomérisation d'isocyanates ou d'isothiocyanates
A cosmetic according to the present invention contains (A) and (B) as defined below, induces the thickening and gelation of a wide range of oleaginous components including silicone oils, and exhibits excellent coating properties. (A) An isocyanurate skeleton-containing organopolysiloxane composed of an isocyanurate skeleton represented by formula (1) and one or more chains selected from among organopolysiloxane chains represented by formulas (2), (3), (4), and (5) (B) An oleaginous component that is liquid at 25°C
A61K 8/898 - Polysiloxanes contenant des atomes autres que du silicium, du carbone, de l'oxygène et de l'hydrogène, p. ex. diméthicone copolyol phosphate contenant de l'azote, p. ex. amodiméthicone, triméthyl silyl amodiméthicone, diméthicone propyl PG-bétaïne
C08G 18/79 - Polyisocyanates ou polyisothiocyanates contenant des hétéro-atomes autres que l'azote, l'oxygène ou le soufre de l'isocyanate ou de l'isothiocyanate de l'azote caractérisés par le polyisocyanate utilisé, celui-ci contenant des groupes formés par oligomérisation d'isocyanates ou d'isothiocyanates
Provided is a room temperature-curable organopolysiloxane composition having excellent storage stability in a sealed packaging form and having less odor. This room temperature-curable organopolysiloxane composition comprises the following (A) component, (B) component, (C) component, and (D) component. (A) is a diorganopolysiloxane having a viscosity of 20-1,000,000 mPa∙s at 25ºC. (B) is an alkoxy or enoxysilane compound in which a functional group bonded to a silicon atom is a hydrocarbon group that does not contain a heteroatom other than an oxygen atom, and/or a partially hydrolyzed condensate thereof. (C) is a curing catalyst. (D) is an organosilicon compound.
The present invention pertains to an epitaxial substrate comprising a nitride semiconductor epitaxial layer on a main surface of a Si substrate, the epitaxial substrate being characterized in that: the rear surface of the Si substrate has recesses in which the substrate thickness of a region other than an outer peripheral part is less than the substrate thickness of the outer peripheral part; the width of the outer peripheral part in the radial direction is 1/15 to 1/6 of the diameter of the Si substrate; the average thickness of the region other than the outer peripheral part is 1/3 to 1/2 of the thickness of the outer peripheral part; and the warpage of said epitaxial substrate is at most 50 μm. Consequently, provided are: an epitaxial substrate in which a nitride semiconductor layer is formed on a Si substrate and in which both shortening of etching time and ensuring of the load resistance of a Si support substrate are achieved, and both shortening of etching time and a reduction in warpage of an epitaxial wafer due to the stress of a heteroepitaxial film are achieved; and a method for manufacturing the same.
The present invention provides a method for producing a semiconductor wafer that has, on the surface thereof, protrusions made of silicon carbide crystals. The method is characterized by comprising: a step for forming a carbon-containing silicon film on a silicon substrate at a first temperature; a step for precipitating silicon carbide crystals in the silicon film by annealing the silicon substrate, on which the silicon film has been formed, at a second temperature; and a step for polishing the silicon film on the annealed silicon substrate to produce a semiconductor wafer in which protrusions made of the silicon carbide crystals are formed on the silicon substrate. Thus, there is provided a method for producing a semiconductor wafer containing silicon carbide crystals (SiC crystals) having a large surface roughness by a simple process.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
28.
METHOD FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
A method for manufacturing group III nitride single crystal substrate that can shorten the device fabrication time and suppress cracking and property degradation during fabrication is provided and method for manufacturing group III nitride single crystal substrate performs: a support substrate preparation step for a support substrate containing nitride ceramics; a planarizing layer formation step for forming a planarizing layer on top surface of the support substrate; a seed crystal layer formation step for forming a seed crystal layer on top surface of the planarizing layer; an epitaxial deposition step for epitaxially growing a target group III nitride single crystal on top surface of seed crystal layer to form composite substrate; and a separation step for separating group III nitride single crystal substrate made of group III nitride single crystal from the remaining section of composite substrate by removing at least one of the planarizing layer and seed crystal layer.
The present invention provides a nitride semiconductor substrate including a substrate for film formation including a composite substrate having a plurality of layers bonded together and a single-crystal silicon layer formed on the composite substrate and a nitride semiconductor thin film formed on the substrate for film formation. The nitride semiconductor thin film includes a GaN layer, and the GaN layer is doped with at least 1×1019 atoms/cm3 or more and less than 5×1020 atoms/cm3 of carbon and/or 5×1018 atoms/cm3 or more and less than 5×1020 atoms/cm3 of iron. Thereby, the nitride semiconductor substrate with an improved high-frequency characteristic and a method of producing this substrate can be provided.
XXXXX film has a distribution in the film formation depth direction, the O/Si ratio in the vicinity of the interface with the first substrate being between 1.9 and 2.0 and the O/Si ratio in the vicinity of the interface with the second substrate being between 1.6 and 1.9; and the O/Si ratio monotonously increases from the interface with the second substrate toward the interface with the first substrate.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
31.
CYLINDRICAL GRINDING METHOD AND CYLINDRICAL GRINDER
The present invention is a cylindrical grinding method for cylindrically grinding a crystal ingot, wherein: a support device having a concave-shaped support section able to support a conical end of the crystal ingot is used as a support device; a cylindrical grinder equipped with a remaining state determining means for determining whether part of the conical end of the crystal ingot remains inside the support section is used as a cylindrical grinder; and in continuous processing of the cylindrical grinding, continuous processing is maintained if the remaining state determining means determines that no part of the end is remaining inside the support section, and the continuous processing is stopped if it is determined that part of the end is remaining. Provided thereby are a cylindrical grinding method and a cylindrical grinder making it possible to reliably find it out if a distal end of a conical tail part is remaining inside the support device in an unloading step after a silicon single crystal ingot has been subjected to cylindrical grinding.
B24B 41/06 - Supports de pièces, p. ex. lunettes réglables
B24B 5/04 - Machines ou dispositifs pour meuler des surfaces de révolution des pièces, y compris ceux qui meulent également des surfaces planes adjacentesAccessoires à cet effet possédant des pointes ou des mandrins pour maintenir la pièce pour meuler extérieurement des surfaces cylindriques
B24B 49/08 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meulerAgencements de l'appareillage d'indication ou de mesure, p. ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs à liquides ou pneumatiques
B24B 49/12 - Appareillage de mesure ou de calibrage pour la commande du mouvement d'avance de l'outil de meulage ou de la pièce à meulerAgencements de l'appareillage d'indication ou de mesure, p. ex. pour indiquer le début de l'opération de meulage impliquant des dispositifs optiques
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
32.
RELEASABLE ADDITION-CURABLE SILICONE COMPOSITION FOR SILICONE ADHESIVE
A releasable addition-curable silicone composition for a silicone adhesive including: a fluorine-containing organopolysiloxane having at least two alkenyl groups bonded to a silicon atom and at least one fluorine-containing substituent bonded to a silicon atom in one molecule, wherein a fluorine content is 25 to 50 mass % and a peak area of components with a molecular weight of 4,000 or less is 2 to 20% of a total peak area based on molecular weight distribution measurement by gel permeation chromatography; an organohydrogenpolysiloxane having at least three hydrogen atoms (SiH groups) bonded to a silicon atom in one molecule; a platinum group metal-based catalyst; and a non-fluorine-based solvent.
Provided is an antiviral composition that has a photocatalytic function, and exhibits high antiviral activities against non-enveloped viruses that have been so far difficult to inactivate using a silver compound in a dark place not exposed to the light. This antiviral composition contains two types of particles that are photocatalyst particles and silver nanoparticles having a protection agent adsorbed on the surfaces thereof and having a dispersed particle diameter of 1000 nm or less and a primary particle diameter of 500 nm or less. The antiviral activity value, based on JIS R1756:2020, of the composition in a dark place is greater than 0.3, and the antiviral activity value of the composition brought by irradiation with light based on JIS R1756:2020 is at least 0.3.
A cyclic aminoorganoxysilane compound of general formula (1):
A cyclic aminoorganoxysilane compound of general formula (1):
A cyclic aminoorganoxysilane compound of general formula (1):
wherein R1 and R2 are each an unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms, R3 to R6 are each an unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, R7, R9, R10, and R11 are each a hydrogen atom or an unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, R8 is an unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms and optionally interposed by an oxygen atom, and a, b, and n are each independently 0, 1, or 2.
An electromagnetic wave shielding member having an electromagnetic wave absorbing layer containing an electromagnetic wave absorbing filler and a binder resin, and a reflection layer disposed on an opposite surface side of an electromagnetic wave incident surface of the electromagnetic wave absorbing layer, wherein the electromagnetic wave absorbing layer has a dielectric constant of 4 to 30 and a dielectric loss tangent of 0.1 to 2.0, the content of the electromagnetic wave absorbing filler is 1 to 20 wt % based on the total weight of the electromagnetic wave absorbing layer, and the reflection layer has a volume resistivity of 1×10−4 to 1×10−1 Ω·cm.
There is provided a composite having a higher dissolution of a drug, the composite including at least a solid dispersion containing the drug and a carrier other than polyvinylpyrrolidone as well as HPMCAS outside the solid dispersion. More specifically, there is provided a composite including at least a solid dispersion containing at least a drug and a carrier selected from the group consisting of a vinylpyrrolidone-vinyl acetate copolymer, methyl cellulose, hydroxypropyl methyl cellulose, hydroxypropyl methyl cellulose phthalate and first hydroxypropyl methyl cellulose acetate succinate; and second hydroxypropyl methyl cellulose acetate succinate outside the solid dispersion.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
Provided is a cosmetic material comprising: (C) a crosslinked product of a component (A) and a component (B), obtained through an addition reaction in the presence of an addition reaction catalyst, the component (A) being an organohydrogenpolysiloxane having one or more hydrosilyl groups in one molecule and the component (B) being an organic compound having, in one molecule, one or more alkenyl groups capable of an addition reaction with a hydrosilyl group; (D) an amino acid or an amino acid derivative; and (E) a solvent-containing liquid. The cosmetic material: has excellent stability of viscosity, etc., over time; comprises a crosslinked product capable of forming a film having excellent continuity, hardness, and flexibility; and has a good feel during use, good spreadability, and excellent makeup durability.
A61K 8/894 - Polysiloxanes saturés, p. ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe polyoxyalkylène, p. ex. cétyl diméthicone copolyol
A61Q 1/02 - Préparations contenant des colorants cutanés, p. ex. pigments
A61Q 1/08 - Préparations contenant des colorants cutanés, p. ex. pigments pour les joues, p. ex. fard
A61Q 1/10 - Préparations contenant des colorants cutanés, p. ex. pigments pour les yeux, p. ex. eye-liner, mascara
A61Q 1/12 - Poudres pour le visage ou le corps, p. ex. pour l'entretien, l'embellissement ou l'absorption
C08L 83/14 - Compositions contenant des composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carboneCompositions contenant des dérivés de tels polymères dans lesquels au moins deux atomes de silicium, mais pas la totalité sont liés autrement que par des atomes d'oxygène
39.
THERMALLY CONDUCTIVE SILICONE ADHESIVE COMPOSITION AND THERMALLY CONDUCTIVE COMPOSITE
The present invention provides a thermally conductive silicone adhesive composition having good handleability, exhibiting sufficient adhesive strength, and also having excellent storage stability of adhesive strength. This thermally conductive silicone adhesive composition comprises (a) a linear or branched organopolysiloxane having an average degree of polymerization of 100-20,000, (b) a thermally conductive filler, (c) an organopolysiloxane containing a component having 0.05-0.15 mol/100 g of an alkenyl group per molecule, (d) an adhesive component, and (e) an organic peroxide. This thermally conductive composite has a thermally conductive adhesive member formed from the thermally conductive silicone adhesive composition on both surfaces of a reinforcing material.
The present invention is a defect evaluation method for a semiconductor Si wafer for evaluating a defect shape inside the Si wafer, the defect evaluation method comprising: a first defect detection step for irradiating a surface of an Si wafer with a DUV laser beam to acquire the position coordinates of defects included in the outermost surface; a second defect detection step for irradiating the surface of the Si wafer with a visible-light laser beam to acquire the position coordinates of defects included in a surface layer region including the outermost surface; a defect classification step for comparing the position coordinates of the defects acquired in the first and second defect detection steps, classifying defects detected only in the first defect detection step and defects of the same coordinates among the defects detected in the first and second defect detection steps into exposed defects, and classifying defects detected only in the second defect detection step into non-exposed defects; and a defect observation step for observing the shapes of the defects classified into the non-exposed defects. Accordingly, a method for observing the overall situations of defects present in an Si wafer without destroying the structures of the defects is provided.
The resist composition comprises a hypervalent iodine compound having the formula (1), a carboxy group-containing polymer, and a solvent. The resist composition above exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography, and a pattern forming process using the resist composition.
The resist composition comprises a hypervalent iodine compound having the formula (1), a carboxy group-containing polymer, and a solvent. The resist composition above exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography, and a pattern forming process using the resist composition.
C07C 69/63 - Esters contenant des atomes d'halogène d'acides saturés
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
42.
SILOXANE-MODIFIED POLYESTER RESIN AND CURED PRODUCT THEREOF
A siloxane-modified polyester resin having a carboxyl group and a (meth)acryloyl group in a side chain thereof. The siloxane-modified polyester resin is capable of imparting sufficient flexibility to a cured product thereof in addition to heat resistance. The siloxane-modified polyester resin having the carboxyl group and the (meth)acryloyl group in a side chain thereof can provide a cured product having high heat resistance and flexibility.
C08G 63/547 - Composés hydroxylés contenant des cycles aromatiques
C08G 63/553 - Acides ou composés hydroxylés contenant des cycles cycloaliphatiques, p. ex. produits d'addition de Diels-Alder
C08G 63/676 - Polyesters contenant de l'oxygène sous forme de groupes éther dérivés d'acides polycarboxyliques et de composés polyhydroxylés dans lesquels au moins un des deux composants contient une insaturation aliphatique
43.
ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS
An onium salt monomer consists of an anion having an aromatic ring substituted with a polymerizable group and iodine, a substituent containing a fluorosulfonic acid anion structure and a substituent containing an iodized aromatic ring being appended to the aromatic ring, and a cation. A resist composition comprising a polymer comprising repeat units derived from the monomer exhibits a high solvent solubility, high sensitivity and high contrast and forms a small-size pattern having satisfactory lithography properties such as LWR and CDU as well as etch resistance.
C07C 309/12 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des atomes d'oxygène liés au squelette carboné contenant des groupes hydroxy estérifiés liés au squelette carboné
C07C 309/17 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone acycliques d'un squelette carboné acyclique saturé contenant des groupes carboxyle liés au squelette carboné
C07C 309/65 - Esters d'acides sulfoniques ayant des atomes de soufre de groupes sulfo estérifiés liés à des atomes de carbone acycliques d'un squelette carboné saturé
C07C 309/77 - Esters d'acides sulfoniques ayant des atomes de soufre de groupes sulfo estérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné contenant des groupes carboxyle liés au squelette carboné
C08F 24/00 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un hétérocycle contenant de l'oxygène
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
44.
METHOD FOR PRODUCING BONDED LIGHT-EMITTING DEVICE WAFER AND METHOD FOR TRANSFERRING MICRO LED
The present invention is a method for producing a bonded light-emitting device wafer, in which a light-emitting device structure, to be a micro LED, and a to-be-bonded substrate are bonded with each other via an adhesive, the method includes the steps of bonding the light-emitting device structure to the to-be-bonded substrate via the adhesive to obtain a bonded wafer, producing a map data for removal by optically investigating a failure portion of the bonded wafer, and irradiating the failure portion of the bonded wafer with the laser light for removal from the to-be-bonded substrate based on the map data for removal, causing a portion of the adhesive which is included in the failure portion to absorb the laser light for removal and causing the portion of the adhesive which is included in the failure portion to sublimate, thereby removing the portion of the light-emitting device structure which is included in the failure portion to obtain the bonded light-emitting device wafer. This can provide the method for producing a bonded light-emitting device wafer capable of selectively removing the failure portion of the light-emitting device structure and producing the bonded light-emitting device wafer.
A method for producing a heteroepitaxial wafer of hetero-epitaxially growing a 3C-SiC single crystal film on a single crystal silicon substrate, wherein the method includes: with using a reduced-pressure CVD apparatus, removing a natural oxide film on a surface of the single crystal silicon substrate with hydrogen baking; forming a SiC nucleus on the single crystal silicon substrate under a condition of a pressure of 13 Pa or higher and 13332 Pa or lower and a temperature of 600° C. or higher and 1200° C. or lower while a source gas containing carbon is supplied; and growing a SiC single crystal under a condition of a pressure of 13 Pa or higher and 13332 Pa or lower and a temperature of 800° C. or higher and lower than 1200° C. while a source gas containing carbon and silicon is supplied to form the 3C-SiC single crystal film.
Provided is an organopolysiloxane suitable as a powder treatment agent exhibiting enhanced long-term storage stability and high reactivity with a powder surface. The organopolysiloxane is represented by average structural formula (1).
Provided is an organopolysiloxane suitable as a powder treatment agent exhibiting enhanced long-term storage stability and high reactivity with a powder surface. The organopolysiloxane is represented by average structural formula (1).
(In formula (1), R represents an alkyl group or the like, R10 is a polyoxyalkylene group which has a hydrolyzable silyl group at the terminal and of which there are one or more per molecule, R11 is a group selected from R and R10, A is an organopolysiloxane segment having a specific structure, a and b are independently a number of 0 to 3, e is a number of 0 to 50, f is a number of 0 to 2,000, g is a number of 0 to 10, and h is 0 or 1. The bonding arrangement of siloxane units each identified by e, f, g, and h in brackets may be blocked or random.)
A method that brings an aqueous solution containing an aminosilanol compound represented by general formula (1)
A method that brings an aqueous solution containing an aminosilanol compound represented by general formula (1)
A method that brings an aqueous solution containing an aminosilanol compound represented by general formula (1)
(R1 and R2 represent a hydrogen atom, a C1-20 monovalent hydrocarbon group, etc., R3 represents a C1-20 divalent hydrocarbon group, R4 represents a C1-20 monovalent hydrocarbon group, and m represents an integer of 0-2.) and a condensate thereof into contact with an acidic cation exchange resin and produces an aqueous solution of a purified aminosilanol compound and aminosiloxane compound that removes metal components in the aqueous solution, the concentration of aminosilanol compound and aminosiloxane compound in the aqueous solution brought into contact with the acidic cation exchange resin being 10-70 mass %, gives an aqueous solution of a purified aminosilanol compound and aminosiloxane compound in which metal impurities contained therein are efficiently decreased.
A resist composition is provided that comprises a hypervalent iodine compound having the formula (1), a carboxylic acid, and a solvent. The resist composition exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography, and a pattern forming process using the resist composition.
A resist composition is provided that comprises a hypervalent iodine compound having the formula (1), a carboxylic acid, and a solvent. The resist composition exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography, and a pattern forming process using the resist composition.
C07C 69/63 - Esters contenant des atomes d'halogène d'acides saturés
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
A resist pattern is formed by (i) applying a resist composition comprising a hypervalent iodine compound, a carboxy-containing polymer, and a solvent onto a substrate or an underlying film to form a resist film, (ii) exposing the resist film to high-energy radiation, (iii) baking the exposed resist film, and (iv) dry etching the baked resist film for development.
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A resist pattern is formed by (i) applying a resist composition comprising a hypervalent iodine compound, a carboxylic acid, and a solvent onto a substrate or an underlying film to form a resist film, (ii) exposing the resist film to high-energy radiation, (iii) baking the exposed resist film, and (iv) dry etching the baked resist film for development.
The present invention provides 5-(2-butyl-1,3-dioxolan-2-yl)-1-methylpentyl acetate of the following formula (1).
The present invention provides 5-(2-butyl-1,3-dioxolan-2-yl)-1-methylpentyl acetate of the following formula (1).
The present invention further provides the aforesaid 5-(2-butyl-1,3-dioxolan-2-yl)-1-methylpentyl acetate (1), the process comprising the step of subjecting an organic magnesium compound (2) of the following general formula (2), wherein X1 represents a halogen atom or a 3-(2-butyl-1,3-dioxolan-2-yl) propyl group, to a nucleophilic addition reaction with propylene oxide of the following formula (3) and then reacting with an acetylating agent of the following general formula (4), wherein X2 represents a halogen atom, an acetoxy group, a methoxy group, or an ethoxy group, to form 5-(2-butyl-1,3-dioxolan-2-yl)-1-methylpentyl acetate (1).
The present invention provides 5-(2-butyl-1,3-dioxolan-2-yl)-1-methylpentyl acetate of the following formula (1).
The present invention further provides the aforesaid 5-(2-butyl-1,3-dioxolan-2-yl)-1-methylpentyl acetate (1), the process comprising the step of subjecting an organic magnesium compound (2) of the following general formula (2), wherein X1 represents a halogen atom or a 3-(2-butyl-1,3-dioxolan-2-yl) propyl group, to a nucleophilic addition reaction with propylene oxide of the following formula (3) and then reacting with an acetylating agent of the following general formula (4), wherein X2 represents a halogen atom, an acetoxy group, a methoxy group, or an ethoxy group, to form 5-(2-butyl-1,3-dioxolan-2-yl)-1-methylpentyl acetate (1).
C07D 317/24 - Radicaux substitués par des atomes d'oxygène ou de soufre liés par des liaisons simples estérifiés
C07C 67/293 - Préparation d'esters d'acides carboxyliques par modification de la partie hydroxyle de l'ester sans introduction d'un groupe ester par isomérisationPréparation d'esters d'acides carboxyliques par modification de la partie hydroxyle de l'ester sans introduction d'un groupe ester par modification de la taille du squelette carboné
C07C 67/297 - Préparation d'esters d'acides carboxyliques par modification de la partie hydroxyle de l'ester sans introduction d'un groupe ester par élimination de groupes fonctionnels ou d'hydrogènePréparation d'esters d'acides carboxyliques par modification de la partie hydroxyle de l'ester sans introduction d'un groupe ester par hydrogénolyse de groupes fonctionnels
C07C 67/42 - Préparation d'esters d'acides carboxyliques par oxydation des groupes précurseurs de la partie acide de l'ester d'alcools secondaires ou de cétones
52.
HYDROCARBON-TERMINAL-GROUP-CONTAINING COMPOUND, SURFACE TREATMENT AGENT, AND ARTICLE
Intermolecular interactions and molecular chain mobility are improved when a hydrocarbon-terminal-group-containing compound represented by formula (1) is used as a surface protective agent for a non-fluorine-based material, and a surface treatment agent containing the compound can form a cured coating film having excellent water repellency, slipperiness, ease of soil removal, and abrasion resistance, in particular, steel wool abrasion resistance. (R is a C1-60 monovalent hydrocarbon group, Z is a divalent connecting functional group containing at least one selected from O, N, S, and Si, Y is a C1-30 divalent hydrocarbon group, A is a monovalent reactive group, and k is 1-3.)
C07F 7/10 - Composés comportant une ou plusieurs liaisons C—Si azotés
C07C 43/15 - Éthers non saturés ne contenant que des liaisons doubles carbone-carbone non aromatiques
C07C 271/12 - Esters des acides carbamiques ayant des atomes d'oxygène de groupes carbamate liés à des atomes de carbone acycliques avec les atomes d'azote des groupes carbamate liés à des atomes d'hydrogène ou à des atomes de carbone acycliques à des atomes d'hydrogène ou à des atomes de carbone de radicaux hydrocarbonés non substitués
C07C 271/20 - Esters des acides carbamiques ayant des atomes d'oxygène de groupes carbamate liés à des atomes de carbone acycliques avec les atomes d'azote des groupes carbamate liés à des atomes d'hydrogène ou à des atomes de carbone acycliques à des atomes de carbone de radicaux hydrocarbonés substitués par des atomes d'azote ne faisant pas partie de groupes nitro ou nitroso
C07C 275/06 - Dérivés d'urée, c.-à-d. composés contenant l'un des groupes les atomes d'azote ne faisant pas partie de groupes nitro ou nitroso ayant des atomes d'azote de groupes urée liés à des atomes de carbone acycliques d'un squelette carboné acyclique et saturé
C07F 7/18 - Composés comportant une ou plusieurs liaisons C—Si ainsi qu'une ou plusieurs liaisons C—O—Si
C09K 3/18 - Substances non couvertes ailleurs à appliquer sur des surfaces pour y minimiser l'adhérence de la glace, du brouillard ou de l'eauSubstances antigel ou provoquant le dégel pour application sur des surfaces
53.
THERMALLY CONDUCTIVE SILICONE COMPOSITION, CURED PRODUCT, AND PRODUCTION METHOD
901010) in the range of 8-12, (C) amorphous aluminum nitride powder having a BET specific surface area of 1.0-4.0 m2/g and an average particle diameter of 0.5-5 μm, and (D) a silicon compound represented by general formula (1): -SiR1aa(OR23-a3-a, wherein ((B):(C)) is 5:5-8:2, the total amount of component (B) and component (C) is 78%-86% by volume in the composition, and the thermally conductive silicone composition has a thermal conductivity of 8.0 W/m·K or more at 30-800 Pa·s as measured by a hot disk method in accordance with ISO 22007-2, and has excellent insulating properties, excellent thermal conductivity, and a moderate viscosity.
The present invention is a polyorganosiloxane having a long-chain alkyl group and a thiourea group or urea group in a side chain, and a method for producing the polyorganosiloxane. As a result of the above, the present invention provides a polyorganosiloxane having a long-chain alkyl group and a thiourea group or urea group in a side chain represented by formula (1); and a method for producing the polyorganosiloxane. R is a group selected from an alkyl group, an aryl group and an aralkyl group; Rais a linear or branched alkyl group having 3-20 carbon atoms; X1is a group represented by formula (2) or (3); Y is is a hydrogen atom or a group of formula (4) and the ratio of the group of formula (4) is 25% or more; and * represents a bond to the silicon atom. Z is a sulfur atom or an oxygen atom; Rb is a group selected from an alkyl group having 1-18 carbon atoms, an allyl group, an aryl group having 6-10 carbon atoms, and an aralkyl group having 7-10 carbon atoms; and * represents a bond to the nitrogen atom.
C08G 77/392 - Polysiloxanes modifiés par post-traitement chimique contenant des atomes autres que le carbone, l'hydrogène, l'oxygène ou le silicium contenant du soufre
C08G 77/26 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant de l'azote
C08G 77/388 - Polysiloxanes modifiés par post-traitement chimique contenant des atomes autres que le carbone, l'hydrogène, l'oxygène ou le silicium contenant de l'azote
The present invention is a method for manufacturing a high frequency SOI wafer having a structure in which a silicon single crystal substrate, a high resistivity epitaxial layer, a Trap-rich layer, a BOX layer, and an SOI layer are laminated in the stated order, wherein: a high resistivity epitaxial layer is formed in advance on the surface of another silicon single crystal substrate, the thickness of said high resistivity epitaxial layer being different from that of the silicon single crystal substrate; measurements are taken of the harmonic characteristics; and the thickness of the high resistivity epitaxial layer is determined on the basis of the measurement result. The present invention thereby provides a manufacturing method that makes it possible, in a silicon substrate having ordinary resistivity, for the harmonic characteristics to be improved a level equivalent to that of a high-resistivity substrate.
Provided is a silicone oil composition that does not result in, for example, separation or sedimentation even during long-term storage and exhibits excellent heat resistance. The heat-resistant silicone oil composition includes: (A) 100 parts by mass of an organopolysiloxane having a kinematic viscosity of 50 to 5,000 mm2/s at 25° C. as measured using a Cannon-Fenske viscometer according to the method stipulated in JIS Z8803:2011; and (B) 10 to 100 parts by mass of a (poly)thiophene-(poly)siloxane block copolymer having a structure represented by the following formula (1):
Provided is a silicone oil composition that does not result in, for example, separation or sedimentation even during long-term storage and exhibits excellent heat resistance. The heat-resistant silicone oil composition includes: (A) 100 parts by mass of an organopolysiloxane having a kinematic viscosity of 50 to 5,000 mm2/s at 25° C. as measured using a Cannon-Fenske viscometer according to the method stipulated in JIS Z8803:2011; and (B) 10 to 100 parts by mass of a (poly)thiophene-(poly)siloxane block copolymer having a structure represented by the following formula (1):
wherein each R1 independently represents a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms, each R2 independently represents a hydrocarbon group having 1 to 10 carbon atoms, a is a number of 1 to 3, b is a number of 2 to 200, and c is a number of 1 to 40.
The resist composition is excellent in sensitivity, resolution, and LWR and is stable and easy to handle in photolithography using a high-energy ray, and a pattern forming method using the resist composition. The resist composition contains a zinc tetranuclear cluster, which was found that it contributes high sensitivity, excellent resolving power and LWR, thereby providing a resist film having excellent stability, which is effective for precise fine processing.
The present invention provides a core-shell quantum dot comprising a Group I-III-VI semiconductor nanocrystal core and a single or multiple semiconductor nanocrystal shells covering the I-III-VI semiconductor nanocrystal core, wherein there is one excited electron level in the core-shell quantum dot that satisfies a binding condition estimated by an effective-mass approximation method between the bottom of the conduction band of the I-III-VI semiconductor nanocrystal core and the bottom of the conduction band of the semiconductor nanocrystal shell. Consequently, a quantum dot having improved light stability and a method for producing same are provided.
C09K 11/08 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes
B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
C01G 15/00 - Composés du gallium, de l'indium ou du thallium
C09K 11/56 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du soufre
C09K 11/62 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
C09K 11/88 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
F21V 9/30 - Éléments contenant un matériau photoluminescent distinct de la source de lumière ou espacé de cette source
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
60.
SILICONE EMULSION COMPOSITION FOR FORMING RUBBER FILM, AND METHOD FOR PRODUCING SAME
The present invention is a silicone emulsion composition for forming a rubber film, comprising the following (A) to (C) and any of the following (D) to (F), wherein the octamethylcyclotetrasiloxane (D4), decamethylcyclopentasiloxane (D5), and dodecamethylcyclohexasiloxane (D6) in (A) are less than 0.1 wt%: (A) an organopolysiloxane represented by formula (1) and having a 15 mass% toluene dissolution viscosity of 200 mPa∙s or more and containing an alkoxy group or a hydroxy group bonded to three or more silicon atoms; (B) a surfactant having an alkylnaphthalene skeleton; (C) water; (D) colloidal silica; (E) a reaction product of an amino group-containing organoalkoxysilane and an acid anhydride; and (F) an epoxy group-containing organoalkoxysilane and/or a partial hydrolysate thereof. As a result, provided are: a silicone emulsion composition for forming a rubber film, which is capable of forming a film by drying, has good temporal stability, durability, and flexibility, and has reduced amounts of D4, D5, and D6; and a method for producing the same.
C08L 83/06 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène
C08J 3/03 - Production de solutions, dispersions, latex ou gel par d'autres procédés que ceux utilisant les techniques de polymérisation en solution, en émulsion ou en suspension dans un milieux aqueux
C09D 183/06 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène
C09K 3/18 - Substances non couvertes ailleurs à appliquer sur des surfaces pour y minimiser l'adhérence de la glace, du brouillard ou de l'eauSubstances antigel ou provoquant le dégel pour application sur des surfaces
D06M 15/643 - Composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone contenant du silicium dans la chaîne principale
61.
STAMP, HOLDING PORTION, TRANSFER METHOD, METHOD FOR MANUFACTURING ELECTRIC/ELECTRONIC APPLICATION PRODUCT, METHOD FOR MANUFACTURING DISPLAY, AND HOLDING METHOD FOR HOLDING ON STAMP
Provided are a stamp, a holding portion for a stamp, a transfer method using the stamp, a method for manufacturing an electric/electronic application product using the transfer method, and a method for manufacturing a display that make it possible to suppress adhesion of a microstructure to a surface other than a holding portion of a stamp and, if a microstructure unintentionally adheres to the surface, suppress detachment of the microstructure from the stamp. A stamp 100 for transferring a microstructure 200 comprises: a base portion 1 formed on a substrate 10; a holding portion 2 formed on the base portion 1 and having a holding surface 21 for holding the microstructure 200; and an adhesion suppression portion 3 that is formed around the holding portion 2 on the base portion 1 and that has a plurality of protrusions 4 having an adhesion suppression surface 41 lower in height than the holding surface 21. The adhesion suppression portion 3 is formed to have an adhesive force that, if the microstructure 200 adheres to the adhesion suppression portion 3, prevents detachment under a force equal to or less than the weight of the microstructure 200.
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
H01L 21/50 - Assemblage de dispositifs à semi-conducteurs en utilisant des procédés ou des appareils non couverts par l'un uniquement des groupes ou
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H10H 20/00 - Dispositifs individuels émetteurs de lumière à semi-conducteurs inorganiques ayant des barrières de potentiel, p. ex. diodes électroluminescentes [LED]
The present invention is a method for manufacturing an epitaxial wafer, for forming a single-crystal silicon layer on a silicon single-crystal wafer. The method is characterized by comprising a hydrofluoric acid cleaning step for removing a natural oxide film from the surface of the silicon single-crystal wafer with a cleaning liquid containing hydrofluoric acid, an oxygen atomic layer forming step for forming, by cleaning, an oxygen atomic layer on the surface of the silicon single-crystal wafer from which the natural oxide film has been removed, and an epitaxial growth step for epitaxially growing, by a vapor-phase growth method, the single-crystal silicon layer on the surface of the silicon single-crystal wafer on which the oxygen atomic layer has been formed, wherein a cleaning liquid containing at least hydrogen peroxide water is used for the cleaning in the oxygen atomic layer forming step. Thus, a method for manufacturing an epitaxial wafer is provided that makes it possible to efficiently form and control an oxygen atomic layer without causing a deterioration in the surface roughness of the wafer.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
This fluoropolyether-based curable composition contains
(A) a perfluoropolyether compound having two or more alkenyl groups per molecule,
(B) a fluorine-containing organo hydrogen silane compound having two or more hydrosilyl groups having a specific structure,
(C) a platinum group metal-based catalyst, and
(D) a specific amount of at least one filler selected from organic resin powders and carbon black powders.
This fluoropolyether-based curable composition contains
(A) a perfluoropolyether compound having two or more alkenyl groups per molecule,
(B) a fluorine-containing organo hydrogen silane compound having two or more hydrosilyl groups having a specific structure,
(C) a platinum group metal-based catalyst, and
(D) a specific amount of at least one filler selected from organic resin powders and carbon black powders.
Such a fluoropolyether-based curable composition can provide a cured product that has endurance against fluoric acid and electrolytic solutions for lithium ion batteries, has fine mechanical properties, and has excellent releasability because of not having uncured portions resulting from low compatibility between structural ingredients.
The present invention is a patterning process including: providing a resist material containing a polymer having a silicon-containing acid-labile group; forming a resist film by using the resist material; and subjecting the resist film to exposure and baking, and then to development by dry etching to form a pattern. This can provide a patterning process according to which a fine pattern can be formed with a high aspect ratio and without pattern collapse occurring.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/20 - Esters des alcools polyhydriques ou des phénols polyhydriques
C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
C08F 230/08 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et contenant du phosphore, du sélénium, du tellure ou un métal contenant un métal contenant du silicium
The resist composition is excellent in sensitivity, resolution, and LWR and is stable and easy to handle in photolithography using a high-energy ray, and a pattern forming method using the resist composition. The resist composition contains a metal complex composed of a metal atom and a ligand having three or more coordinating functional groups.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
66.
COMPOSITION FOR FORMING FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, MONOMER, AND POLYMER
The present invention is a composition for forming a film including a polymer having an aromatic group having a pentafluorosulfanyl group as a substituent. An object of the present invention is to provide a composition for forming a film that has a less environmental load and excellent coatability on a substrate.
G03F 7/095 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires ayant plus d'une couche photosensible
G03F 7/36 - Dépouillement selon l'image non couvert par les groupes , p. ex. utilisant un courant gazeux, un plasma
Provided are a stamp, a stamp holding part, a transfer method using the stamp, a method for manufacturing an electric/electronic application product using the transfer method, and a method for manufacturing a display, which are capable of suppressing adhesion of a microstructure to a surface other than the stamp holding part, and in a case where a microstructure unintentionally adheres to the surface, of preventing the microstructure from falling off the stamp. A stamp 100 for transferring a microstructure 200 includes: a base part 1 formed atop a substrate 10; a holding part 2 formed atop the base part 1 and having a holding surface 21 for holding the microstructure 200; and an adhesion suppression part 3 that is formed around the holding part 2 atop the base part 1 and that has a plurality of protrusions 4 having an adhesion suppression surface 41 lower in height than the holding surface 21. In a case where the microstructure 200 adheres to the adhesion suppression part 3, the adhesion suppression part 3 is formed to have an adhesion force such that the microstructure 200 does not come off under a force no more than the weight of the microstructure.
H01L 21/50 - Assemblage de dispositifs à semi-conducteurs en utilisant des procédés ou des appareils non couverts par l'un uniquement des groupes ou
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs
68.
SILICONE RUBBER COMPOSITION AND CURED OBJECT OBTAINED THEREFROM
Provided is a silicone rubber composition comprising: 100 parts by mass of (A) an organopolysiloxane having a degree of polymerization of 100 or greater and having two or more silicon-atom-bonded alkenyl groups in the molecule; 25-70 parts by mass of (B) reinforcing silica having a specific surface area, as measured by a BET method, of 50 m2/g or larger; 5-50 parts by mass of (C) flat boron nitride having an average particle diameter of 3-50 μm and an aspect ratio of 5 or higher; and (D) a curing agent in an amount effective in curing the component (A).
Provided are a polyvinyl alcohol polymer and the like. The polyvinyl alcohol polymer has an ionic skeleton and satisfies at least one requirement selected from the following requirements 1, 2, and 3. Requirement 1: the water-insoluble fraction is 30 mass% or less. Requirement 2: the transparency (430 nm) of a 4 mass% aqueous solution is 1% or more. Requirement 3: the YI value of a 4 mass% dimethyl sulfoxide solution is 30 or less.
C09J 129/04 - Alcool polyvinyliqueHomopolymères ou copolymères partiellement hydrolysés d'esters d'alcools non saturés avec des acides carboxyliques saturés
70.
COPPER FOIL WITH RESIN, AND COPPER-CLAD LAMINATE AND PRINTED WIRING BOARD USING THE SAME
A copper foil with resin including: an uncured or semi-cured thermosetting resin layer; a copper foil, wherein the thermosetting resin layer includes a thermosetting resin composition including: a maleimide compound having one or more hydrocarbon groups derived from dimer acid skeleton in one molecule; and one or more catalysts selected from the group consisting of thermal radical polymerization initiator and an anionic polymerization initiator, and maleimide compound of component is one or more compounds selected from the group including formulae (1), (2), and (3), one or more compounds of component is solid at 25° C., and a ten-point average roughness (Rz) of a surface of copper foil, the surface which contacts thermosetting resin layer, is 1.5 μm or less. An uncured or semi-cured resin layer using maleimide resin having low dielectric characteristics, high adhesiveness and low-roughness copper foil; and copper-clad laminate and printed wiring board using this copper foil with resin.
A copper foil with resin including: an uncured or semi-cured thermosetting resin layer; a copper foil, wherein the thermosetting resin layer includes a thermosetting resin composition including: a maleimide compound having one or more hydrocarbon groups derived from dimer acid skeleton in one molecule; and one or more catalysts selected from the group consisting of thermal radical polymerization initiator and an anionic polymerization initiator, and maleimide compound of component is one or more compounds selected from the group including formulae (1), (2), and (3), one or more compounds of component is solid at 25° C., and a ten-point average roughness (Rz) of a surface of copper foil, the surface which contacts thermosetting resin layer, is 1.5 μm or less. An uncured or semi-cured resin layer using maleimide resin having low dielectric characteristics, high adhesiveness and low-roughness copper foil; and copper-clad laminate and printed wiring board using this copper foil with resin.
B32B 15/14 - Produits stratifiés composés essentiellement de métal adjacent à une couche fibreuse ou filamenteuse
B32B 5/02 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par les caractéristiques de structure d'une couche comprenant des fibres ou des filaments
B32B 15/092 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique comprenant des résines époxy
B32B 15/20 - Produits stratifiés composés essentiellement de métal comportant de l'aluminium ou du cuivre
B32B 17/04 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire sous forme de fibres ou filaments collés ou enrobés dans une substance plastique
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
71.
PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS
The photosensitive resin composition includes (A) a polymer having a silphenylene skeleton, a polysiloxane skeleton, and a fluorene skeleton in a main chain, and containing a polyhydric alcohol structure in a side chain, (B) a crosslinker of specific structure, and (C) a photoacid generator. The photosensitive resin composition gives a resin coating or resin layer that can be simply processed in thick film form to define a fine size perpendicular pattern.
The present invention is a composition for forming an organic film, containing: a resin and/or compound (A) for forming an organic film; a polymer (B) having a repeating unit represented by the following general formula (1) and/or (2); and a solvent (C). This can provide: a composition for forming an organic film which is excellent in film-formability (in-plane uniformity) on a substrate (wafer) and filling property, can suppress humps in an EBR process, and allows an excellent process margin when used for an organic underlayer film for a multilayer resist; a method for forming an organic film, using the composition; a patterning process using the composition; a monomer; and a polymer.
The present invention is a composition for forming an organic film, containing: a resin and/or compound (A) for forming an organic film; a polymer (B) having a repeating unit represented by the following general formula (1) and/or (2); and a solvent (C). This can provide: a composition for forming an organic film which is excellent in film-formability (in-plane uniformity) on a substrate (wafer) and filling property, can suppress humps in an EBR process, and allows an excellent process margin when used for an organic underlayer film for a multilayer resist; a method for forming an organic film, using the composition; a patterning process using the composition; a monomer; and a polymer.
C09D 133/14 - Homopolymères ou copolymères d'esters d'esters contenant des atomes d'halogène, d'azote, de soufre ou d'oxygène en plus de l'oxygène du radical carboxyle
C07C 69/736 - Éthers le groupe hydroxyle de l'ester étant éthérifié par un composé hydroxylé dont le groupe hydroxyle est lié à un atome de carbone d'un cycle aromatique à six chaînons
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
73.
ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS
A sulfonium or iodonium salt monomer containing an aromatic sulfonic acid anion containing a polymerizable group of a styrene or vinylnaphthalene structure and an iodized aromatic ring structure is a useful acid generator. A resist composition comprising a polymer comprising repeat units derived from the monomer exhibits a high solvent solubility, high sensitivity and high contrast and forms a small-size pattern with satisfactory lithography properties such as EL, LWR, CDU and DOF.
G03F 7/029 - Composés inorganiquesComposés d'oniumComposés organiques contenant des hétéro-atomes autres que l'oxygène, l'azote ou le soufre
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
[Problem] The object of the present invention is to provide a method for producing a siloxane compound having a hydroxyl and (meth)acrylic groups with a high purity and high yield.
[Problem] The object of the present invention is to provide a method for producing a siloxane compound having a hydroxyl and (meth)acrylic groups with a high purity and high yield.
[Solution]A method for purifying a (meth)acrylic group-containing siloxane, comprising a step of subjecting a mixture comprising a (meth)acrylic group-containing siloxane represented by the formula (I) and impurities derived from the siloxane and/or starting compounds of the siloxane to vacuum distillation in the presence of a polymerization inhibitor having one or more nitroxyl radicals in one molecule and having a molecular weight of 160 to 2,000 to thereby remove the impurities. In the formula (I), R′ is a hydrogen atom or a methyl group, L is a divalent hydrocarbon group having at least one hydroxyl group and optionally having an ether bond, and A is an organo(poly)siloxane residue.
A61L 27/18 - Matériaux macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone
The resist composition exhibits a high contrast, improved maximum resolution, and satisfactory sensitivity and line width roughness (LWR) when processed by lithography using high-energy radiation, especially electron beam (EB) and EUV, and a pattern forming process using the resist composition. The resist composition comprising (A) a base polymer containing a polymer comprising repeat units having an acid labile group and repeat units having a carboxy group, (B) an organic solvent, and (C) a hypervalent iodine compound having formula (1):
The resist composition exhibits a high contrast, improved maximum resolution, and satisfactory sensitivity and line width roughness (LWR) when processed by lithography using high-energy radiation, especially electron beam (EB) and EUV, and a pattern forming process using the resist composition. The resist composition comprising (A) a base polymer containing a polymer comprising repeat units having an acid labile group and repeat units having a carboxy group, (B) an organic solvent, and (C) a hypervalent iodine compound having formula (1):
The present invention pertains to a liquid addition-curable silicone rubber composition for airbags, the composition comprising: (A) a linear organopolysiloxane having a polymerization degree of 50-2,000 and including an alkenyl group bonded to two or more silicon atoms in one molecule; (B) a powdery three-dimensional network organopolysiloxane resin; (C) a linear organohydrogenpolysiloxane in which terminals are blocked with a trialkylsilyl group and which includes two or more hydrosilyl groups in one molecule; (D) a silica fine powder; (E) a surface treatment agent selected from silazanes or chlorosilanes; (F) a hydrosilylation reaction catalyst; (G) an organic silicon compound including an adhesiveness-imparting functional group; and (H) a titanium or zirconium compound including one or more ligands represented by formula (1). As a result, provided are: a liquid addition-curable silicone rubber composition for airbags, the composition having excellent sliding detachment resistance and storage stability; and an airbag having a cured coating made of said composition.
This heat-curable perfluoropolyether rubber composition contains specific proportions of (A) a perfluoropolyether polymer having a specific structure which has two or more alkenyl groups in the molecular chain thereof, (B) a fluorine-containing organohydrogen polysiloxane which has two or more hydrogen atoms bonded to a silicon atom in each molecule thereof, (C) a hydrosilylation reaction catalyst and (D) a hydrophobic silica powder which has a BET specific surface area of 50 m2/g or higher. As a result, this heat-curable perfluoropolyether rubber composition is capable of producing a cured article (perfluoropolyether rubber cured article) which has excellent heat resistance, chemical resistance, solvent resistance, low-temperature dependence, rubber properties (mechanical strength, elongation properties, etc.) and the like while also exhibiting excellent injection molding properties and mold release properties.
The non-chemically amplified resist composition which exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically electron beam (EB) lithography and EUV lithography, a laminated film including a resist film obtained from the resist composition. The resist composition comprises a hypervalent bismuth compound, a carboxy group-containing polymer, and a solvent.
The non-chemically amplified resist composition exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically electron beam (EB) lithography and EUV lithography. The resist composition can be applicable for forming a pattern forming process. The resist composition comprises a hypervalent bismuth compound, a carboxylic acid, and a solvent.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
G03F 7/32 - Compositions liquides à cet effet, p. ex. développateurs
An object of the present invention is to improve productivity by omitting the strain removal process in the manufacturing process of quartz glass rods and to provide a method of leaving strain that does not cause substantial damage in the event that cracks occur in quartz glass rods after shipment due to the effects of residual strain. A manufacturing method of a quartz glass rod according to the present invention involves obtaining a quartz glass rod of a predetermined diameter by gradually drawing the quartz glass rod through multiple drawing processes. In the manufacturing method of the quartz glass rod, during the multiple drawing processes, the bending of one or more portions of the quartz glass rod drawn by a glass processing lathe is corrected by heating the portions with a burner flame to soften them and bring the bending amount within a specified range.
The present invention is a polyvalent ammonium salt compound having two or more ammonium ions per molecule, the polyvalent ammonium salt compound being represented by the following general formula (A-1). This can provide: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a silicon-containing resist underlayer film that has an appropriate etching rate and can improve LWR and CDU in an ultra-fine pattern in a multilayer resist method; a polyvalent ammonium salt compound to be contained in the composition; and a patterning process using the composition.
The present invention is a polyvalent ammonium salt compound having two or more ammonium ions per molecule, the polyvalent ammonium salt compound being represented by the following general formula (A-1). This can provide: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a silicon-containing resist underlayer film that has an appropriate etching rate and can improve LWR and CDU in an ultra-fine pattern in a multilayer resist method; a polyvalent ammonium salt compound to be contained in the composition; and a patterning process using the composition.
C08G 77/08 - Procédés de préparation caractérisés par les catalyseurs utilisés
C07C 211/13 - Amines contenant au moins trois groupes amino liés au squelette carboné
C07C 211/26 - Composés contenant des groupes amino liés à un squelette carboné ayant des groupes amino liés à des atomes de carbone acycliques d'un squelette carboné non saturé contenant au moins un cycle aromatique à six chaînons
C07D 235/18 - BenzimidazolesBenzimidazoles hydrogénés avec des radicaux aryle liés directement en position 2
C07D 251/04 - Composés hétérocycliques contenant des cycles triazine-1, 3, 5 non condensés avec d'autres cycles ne comportant pas de liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques
C07D 257/12 - Cycles à six chaînons comportant quatre atomes d'azote
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
The present invention is a heat treatment method for performing a film-forming heat treatment which forms a film on a main surface of a silicon substrate in which the plane orientation of the main surface is {110}, said heat treatment method being characterized by including: a step in which the silicon substrate, in which the plane orientation of the main surface is {110}, is loaded into a heat treatment furnace while the internal temperature of the furnace is 540°C or lower; a step in which the temperature of the silicon substrate that was loaded into the heat treatment furnace is increased while a passivation film is formed on the main surface of the silicon substrate; and a step in which the film-forming heat treatment of the silicon substrate is performed after the temperature increase. Thus, provided is a method that suppresses and controls roughness, especially minute protruding defects, on the main surface while forming a film on the Si {110} substrate.
Provided is an organopolysiloxane which is expressed by average compositional formula (1) and which comprises: a mercapto group-containing organic group; and a trialkoxysilyl group-containing organic group and/or a dialkoxymethylsilyl group-containing organic group. The organopolysiloxane exhibits low volatility and excellent adhesiveness and adhesion with respect to an inorganic base material.
Provided is an organopolysiloxane which is expressed by average compositional formula (1) and which comprises: a mercapto group-containing organic group; and a trialkoxysilyl group-containing organic group and/or a dialkoxymethylsilyl group-containing organic group. The organopolysiloxane exhibits low volatility and excellent adhesiveness and adhesion with respect to an inorganic base material.
(A)a(B)b(C)c(D)dSiO(4-a-b-c-d)/2 (1)
Provided is an organopolysiloxane which is expressed by average compositional formula (1) and which comprises: a mercapto group-containing organic group; and a trialkoxysilyl group-containing organic group and/or a dialkoxymethylsilyl group-containing organic group. The organopolysiloxane exhibits low volatility and excellent adhesiveness and adhesion with respect to an inorganic base material.
(A)a(B)b(C)c(D)dSiO(4-a-b-c-d)/2 (1)
(In the formula, A represents a mercapto group-containing organic group, B represents a trialkoxysilyl group-containing organic group or a dialkoxymethylsilyl-containing organic group, C represents a hydrolyzable group, D represents a C1-12 alkyl group, a C1-10 haloalkyl group, or a C6-12 aryl group, and a, b, c, and d represent numbers that satisfy 0
C08G 77/28 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant du soufre
Provided are: a surfactant composition containing
(A) a nonionic surfactant that has two or more hydroxyl groups per hydrophilic group, and
(B) an oily component that is in a liquid form at 25° C. and has only one hydroxyl group,
the viscosity at 25° C. of said surfactant composition being lower than 50% of the viscosity of component (A) and said surfactant composition having low viscosity and excellent handling properties; and a cosmetic containing the surfactant composition and giving good feeling in use.
A61K 8/893 - Polysiloxanes saturés, p. ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe alkoxyle ou aryloxyle, p. ex. béhénoxy diméthicone, stéaroxy diméthicone
The present invention is a patterning process including: providing a resist material containing a polymer in which a carboxy group bonded to a polymer main chain is protected with an acid-labile group; forming a resist film by using the resist material; and subjecting the resist film to exposure and heating, and then to development by dry etching to form a pattern, where the polymer has one or both of repeating units represented by the following general formulae (a1) and (a2). This can provide a patterning process according to which a fine pattern can be formed with a high aspect ratio and without pattern collapse occurring.
The present invention is a patterning process including: providing a resist material containing a polymer in which a carboxy group bonded to a polymer main chain is protected with an acid-labile group; forming a resist film by using the resist material; and subjecting the resist film to exposure and heating, and then to development by dry etching to form a pattern, where the polymer has one or both of repeating units represented by the following general formulae (a1) and (a2). This can provide a patterning process according to which a fine pattern can be formed with a high aspect ratio and without pattern collapse occurring.
G03F 7/38 - Traitement avant le dépouillement selon l'image, p. ex. préchauffage
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08F 220/20 - Esters des alcools polyhydriques ou des phénols polyhydriques
Provided is a thermally conductive silicone composition that becomes a cured product having stability even in a low-temperature environment. The thermally conductive silicone composition comprises: (A) an organopolysiloxane having, in each molecule, a silicon atom to which two or more aliphatic unsaturated hydrocarbon groups are bonded; (B) an organopolysiloxane having, in each molecule, a silicon atom to which one aliphatic unsaturated hydrocarbon group is bonded; (C) an organohydrogen polysiloxane having two or more SiH groups in each molecule; (D) an organosilane represented by general formula (1) of R1aaSi(OR24-a4-a (in formula (1), R1is a monovalent hydrocarbon group, R2 is an alkyl group or a cycloalkyl group, and a is a number from 1 to 3); (E) a platinum group metal catalyst; (F) a reaction control agent; (G) an inorganic filler having an average particle diameter of 3 μm or less; and (H) an inorganic filler having an average particle diameter of from greater than 3 μm to 150 μm or less.
C08K 5/5419 - Composés contenant du silicium contenant de l'oxygène contenant au moins une liaison Si—O contenant au moins une liaison Si—C
C08L 83/05 - Polysiloxanes contenant du silicium lié à l'hydrogène
87.
MICROSTRUCTURE-TRANSFER APPARATUS, STAMP HEAD UNIT, STAMP COMPONENT FOR TRANSFERRING MICROSTRUCTURE, AND METHOD FOR TRANSFERRING MICROSTRUCTURE-INTEGRATED COMPONENT
The present invention is a stamp head unit including: a stamp component including at least a silicone-based rubber film on a quartz glass substrate; a stamp-component-holding component including a surface having a hole for vacuum suction of a surface of the quartz glass substrate of the stamp component; and a tubular component having an evacuation suction hole connected to communicate with the hole for vacuum suction so as to maintain a vacuum, and being coupled and fixed with the stamp-component-holding component. This provides: a stamp component that can be fixed stably by a simple and convenient vacuum chuck system; a stamp head unit with which the stamp component can be replaced in a short time; and a microstructure-transfer apparatus provided with the stamp component and the stamp head unit.
The present invention is a thermally conductive silicone heat-shrinkable tube, which is characterized by being a silicone rubber composition that contains: 100 parts by mass of (A) a straight chain organopolysiloxane which has two or more silicon atom-bonded vinyl groups per molecule and has an average degree of polymerization of 3000-50,000, and in which among all substituent groups, 50 mol% or more are methyl groups and 0.05-5.0 mol% are vinyl groups; 5-60 parts by mass of (B) powdered silica having a BET specific surface area of 100 m2/g or more; 150-2000 parts by mass of (C) one or more types of thermally conductive filler selected from among metals, metal oxides, metal hydroxides, nitrides and carbides; 10-100 parts by mass of (D) a thermoplastic resin; an effective quantity of (E) a curing agent; and an effective quantity of (F) a dispersing agent for a filler. Provided by this configuration is a thermally conductive silicone heat-shrinkable tube which exhibits thermal conductivity and conventional heat-shrinking characteristics.
An onium salt containing a sulfonic acid anion having a substituted fused ring structure and an aromatic sulfonic acid structure has solvent solubility and generates an acid with reduced diffusion. A chemically amplified positive resist composition comprising the onium salt as a photoacid generator and a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer is processed by lithography to form a pattern of rectangular profile.
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C09D 135/02 - Homopolymères ou copolymères d'esters
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
This fluoropolyether group-containing polymer composition contains, at a specific ratio, (I) a polymer having a fluorooxyalkyl group at one terminal and having, at the other terminal, two or more reactive functional groups (hydroxyl group-containing silyl groups or hydrolyzable silyl groups), and/or a partial (hydrolyzed) condensate of the polymer, and (II) a polymer having a fluorooxyalkylene group in the molecule and having reactive functional groups (hydroxyl group-containing silyl groups or hydrolyzable silyl groups) bound to both terminals of the fluorooxyalkylene group via a linkage group not having a polar group, and/or a partial (hydrolyzed) condensate of the polymer. A coating agent containing the fluoropolyether group-containing polymer composition can form a cured coating film that has excellent water repellency and oil repellency and abrasion durability against nonwoven fabric and steel wool.
C08L 71/00 - Compositions contenant des polyéthers obtenus par des réactions créant une liaison éther dans la chaîne principaleCompositions contenant des dérivés de tels polymères
C08G 65/336 - Polymères modifiés par post-traitement chimique avec des composés organiques contenant du silicium
C09D 171/00 - Compositions de revêtement à base de polyéthers obtenus par des réactions créant une liaison éther dans la chaîne principaleCompositions de revêtement à base de dérivés de tels polymères
C09K 3/18 - Substances non couvertes ailleurs à appliquer sur des surfaces pour y minimiser l'adhérence de la glace, du brouillard ou de l'eauSubstances antigel ou provoquant le dégel pour application sur des surfaces
This organopolysiloxane represented by formula (1) can, when added to a rubber composition, be used to achieve a tire having desired fuel efficiency and exhibiting excellent hardness, tensile properties, rolling resistance, and wet grip properties. (1): (R1aa(R2bb(OR3cc(R4d(4-a-b-c-d)/2(4-a-b-c-d)/2 (In the formula, the R1moieties each independently represent a mercapto group-containing organic group, the R2moieties each independently represent an aryl group having 6-10 carbon atoms or an aralkyl group having 7-10 carbon atoms, the R3moieties each independently represent a hydrogen atom, an alkyl group having 1-20 carbon atoms, an aryl group having 6-10 carbon atoms, an aralkyl group having 7-10 carbon atoms, or an alkenyl group having 2-10 carbon atoms, the R4 moieties each independently represent an alkyl group having 1-12 carbon atoms, and a, b, c, and d indicate numbers satisfying 0
C08G 77/28 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant du soufre
B60C 1/00 - Pneumatiques caractérisés par la composition chimique, la disposition ou le mélange physique de la composition
C08K 3/013 - Charges, pigments ou agents de renforcement
C08L 9/00 - Compositions contenant des homopolymères ou des copolymères d'hydrocarbures à diènes conjugués
C08L 21/00 - Compositions contenant des caoutchoucs non spécifiés
C08L 83/08 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes, autres que le carbone, l'hydrogène et l'oxygène
92.
ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS
An onium salt containing a sulfonic acid anion having a substituted fused ring structure and an aromatic sulfonic acid structure is provided. A chemically amplified resist composition comprising the onium salt has satisfactory solvent solubility, high sensitivity, and high contrast, and forms a resist film with improved lithography properties such as EL and LWR.
C07C 309/58 - Groupes acide carboxylique ou leurs esters
C07C 309/71 - Esters d'acides sulfoniques ayant des atomes de soufre de groupes sulfo estérifiés liés à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons
C07C 323/09 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des atomes d'halogène ou des groupes nitro ou nitroso liés au même squelette carboné ayant des atomes de soufre de groupes thio liés à des atomes de carbone de cycles aromatiques à six chaînons du squelette carboné
C07C 323/20 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des atomes d'oxygène, liés par des liaisons simples, liés au même squelette carboné ayant l'atome de soufre d'au moins un des groupes thio lié à un atome de carbone d'un cycle aromatique à six chaînons du squelette carboné avec des atomes d'oxygène, liés par des liaisons simples, liés à des atomes de carbone du même cycle aromatique à six chaînons non condensé
C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
A chemically amplified negative resist composition comprising (A) a photoacid generator in the form of an onium salt containing a sulfonic acid anion having a substituted fused ring structure and an aromatic sulfonic acid structure and (B) a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with satisfactory LER and fidelity.
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
C09D 135/02 - Homopolymères ou copolymères d'esters
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
The purpose of the present invention is to provide: a double-sided molding method using a protective film that, during processing, does not detach from a resin pattern to be protected, does not cause any defects, and does not generate any adhesive residues when the protective film is detached; and a molded product obtained thereby. A double-sided molding method for forming a first resin pattern 110 on a first surface 11 of a substrate 1 and forming a second resin pattern 120 on a second surface 12 of the substrate 1 comprises: a protective film pasting step for pasting a silicone rubber layer side of a protective film 2 having the silicone rubber layer on the first resin pattern 110; and a second resin pattern molding step for forming a second resin pattern 120 on the second surface 12 after the protective film pasting step.
The present invention provides: a dispersant, a dispersion, and an ink composition that are characterized by containing a styrene-ethyleneoxy group–containing (meth)acrylic acid copolymer (A) that has a molecular weight distribution (Mw/Mn) of no more than 2.0 and a weight average molecular weight of 1,000–50,000, the styrene (a1) content of the copolymer being 1–40 mass%; and production methods for the dispersant, the dispersion, and the ink composition. The purpose of the present invention is to provide a dispersant that can disperse a disperse dye or pigment even when added in a small amount and makes it possible to exhibit wetting properties, a dispersion that exhibits re-dispersibility and makes it possible to achieve excellent dispersion stability for a disperse dye or pigment, an ink composition that uses the dispersant and the dispersion, and production methods for the dispersant, the dispersion, and the ink composition.
The present invention provides a process for preparing a 2-(3-alkenyl)-1,3-butadiene compound of the following general formula (A), wherein R1 and R2 represent, independently of each other, a hydrogen atom or a linear, branched, or cyclic hydrocarbon group having 1 to 20 carbon atoms and optionally having an unsaturated bond(s), the process comprising the step of subjecting a secondary allylsulfone compound of the following general formula (G), wherein R1 and R2 represent, independently of each other, a hydrogen atom or a linear, branched, or cyclic hydrocarbon group having 1 to 20 carbon atoms and optionally having an unsaturated bond(s), W represents an arenesulfonyl group, and Z represents a halogen atom, to a reductive removal of an arenesulfonyl group, W, at an allyl position, and then subjecting the secondary allylsulfone compound (G) to an elimination reaction of a hydrogen halide, HZ, in this order or in reverse order, to form the 2-(3-alkenyl)-1,3-butadiene compound (A).
The present invention provides a process for preparing a 2-(3-alkenyl)-1,3-butadiene compound of the following general formula (A), wherein R1 and R2 represent, independently of each other, a hydrogen atom or a linear, branched, or cyclic hydrocarbon group having 1 to 20 carbon atoms and optionally having an unsaturated bond(s), the process comprising the step of subjecting a secondary allylsulfone compound of the following general formula (G), wherein R1 and R2 represent, independently of each other, a hydrogen atom or a linear, branched, or cyclic hydrocarbon group having 1 to 20 carbon atoms and optionally having an unsaturated bond(s), W represents an arenesulfonyl group, and Z represents a halogen atom, to a reductive removal of an arenesulfonyl group, W, at an allyl position, and then subjecting the secondary allylsulfone compound (G) to an elimination reaction of a hydrogen halide, HZ, in this order or in reverse order, to form the 2-(3-alkenyl)-1,3-butadiene compound (A).
A composition for forming organic film, containing: resin or compound for forming an organic film; fluorine-containing compound represented by formula; and solvent, where L represents single bond or n1-valent organic group having 1 to 50 carbon atoms, R1 represents saturated or unsaturated monovalent organic group having 1 to 20 carbon atoms, organic group R1 having at least one fluorine-containing structure represented by any of following formulae, and “*” represents attachment point in organic group represented by R1, organic group R1 optionally having two or more kinds among structures represented by formulae, or optionally having two or more identical structures. A composition for forming organic film, which is excellent in film-formability on a substrate, filling property, and hump suppression property at the time of EBR process, and makes it possible to form an organic film having an excellent process margin when used as an organic film for multilayer resist.
A composition for forming organic film, containing: resin or compound for forming an organic film; fluorine-containing compound represented by formula; and solvent, where L represents single bond or n1-valent organic group having 1 to 50 carbon atoms, R1 represents saturated or unsaturated monovalent organic group having 1 to 20 carbon atoms, organic group R1 having at least one fluorine-containing structure represented by any of following formulae, and “*” represents attachment point in organic group represented by R1, organic group R1 optionally having two or more kinds among structures represented by formulae, or optionally having two or more identical structures. A composition for forming organic film, which is excellent in film-formability on a substrate, filling property, and hump suppression property at the time of EBR process, and makes it possible to form an organic film having an excellent process margin when used as an organic film for multilayer resist.
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
G03F 7/16 - Procédés de couchageAppareillages à cet effet
G03F 7/32 - Compositions liquides à cet effet, p. ex. développateurs
G03F 7/34 - Dépouillement selon l'image par transfert sélectif, p. ex. par arrachement
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/308 - Traitement chimique ou électrique, p. ex. gravure électrolytique en utilisant des masques
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
98.
POLYMER, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS
A polymer comprising repeat units having formula (A1) and repeat units having formula (A2) is provided. The acid generated therefrom has an adequate acid strength and reduced diffusion distance. A chemically amplified negative resist composition comprising the polymer as a polymer-bound acid generator has satisfactory organic solvent solubility and etch resistance.
A polymer comprising repeat units having formula (A1) and repeat units having formula (A2) is provided. The acid generated therefrom has an adequate acid strength and reduced diffusion distance. A chemically amplified negative resist composition comprising the polymer as a polymer-bound acid generator has satisfactory organic solvent solubility and etch resistance.
A polymer compound contains a repeating unit having a structure selected from salts of ammonium, lithium, sodium, potassium, and silver formed with N-carbonyl-fluorosulfonamide, and a repeating unit having an alkoxysilyl group, wherein the polymer compound has a weight-average molecular weight in a range of 1,000 to 1,000,000.
A61B 5/257 - Moyens adhésifs, p. ex. garnitures ou bandes adhésives
A61B 5/265 - Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant de l’argent ou du chlorure d’argent
A61B 5/268 - Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant des polymères conducteurs, p. ex. des polymères PEDOT:PSS
A61B 5/28 - Électrodes bioélectriques à cet effet spécialement adaptées à des utilisations particulières pour l’électrocardiographie [ECG]
C08F 228/02 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison au soufre ou par un hétérocycle contenant du soufre par une liaison au soufre
100.
INK COMPOSITION FOR AN INKJET, A RECORDED MATERIAL, AND A RECORDING METHOD WITH AN INKJET
[Problem]
[Problem]
An object of the present invention is to provide an ink composition for inkjet printing that imparts a printed layer that is excellent in terms of tactile sensation, abrasion resistance, and adherence to a substrate, a printed material and a recorded material that have an ink layer formed from the ink composition, and an inkjet recording method.
[Problem]
An object of the present invention is to provide an ink composition for inkjet printing that imparts a printed layer that is excellent in terms of tactile sensation, abrasion resistance, and adherence to a substrate, a printed material and a recorded material that have an ink layer formed from the ink composition, and an inkjet recording method.
[Solution]
[Problem]
An object of the present invention is to provide an ink composition for inkjet printing that imparts a printed layer that is excellent in terms of tactile sensation, abrasion resistance, and adherence to a substrate, a printed material and a recorded material that have an ink layer formed from the ink composition, and an inkjet recording method.
[Solution]
An ink composition comprising the following components (A), (B) and (C),
(A) an emulsion of a silicone acrylic copolymer resin in an amount of 0.5 to 20 parts by mass as a solid content,
(B) an emulsion of a urethane resin in an amount of 10 to 79.5 parts by mass as a solid content, and
(C) pigment in an amount of 20 to 89.5 parts by mass, provided that a total mass of the solid content of components (A) and (B) and component (C) is 100 parts by mass,
wherein component (A) is an emulsion of a copolymer of (a1) a polyorganosiloxane represented by the following formula (1) in an amount of 60 to 99 parts by mass with (a2) an acrylic acid ester monomer and/or a methacrylic acid ester monomer in an amount of 1 to 40 parts by mass, provided that a total amount of components (a1) and (a2) is 100 parts by mass,
[Problem]
An object of the present invention is to provide an ink composition for inkjet printing that imparts a printed layer that is excellent in terms of tactile sensation, abrasion resistance, and adherence to a substrate, a printed material and a recorded material that have an ink layer formed from the ink composition, and an inkjet recording method.
[Solution]
An ink composition comprising the following components (A), (B) and (C),
(A) an emulsion of a silicone acrylic copolymer resin in an amount of 0.5 to 20 parts by mass as a solid content,
(B) an emulsion of a urethane resin in an amount of 10 to 79.5 parts by mass as a solid content, and
(C) pigment in an amount of 20 to 89.5 parts by mass, provided that a total mass of the solid content of components (A) and (B) and component (C) is 100 parts by mass,
wherein component (A) is an emulsion of a copolymer of (a1) a polyorganosiloxane represented by the following formula (1) in an amount of 60 to 99 parts by mass with (a2) an acrylic acid ester monomer and/or a methacrylic acid ester monomer in an amount of 1 to 40 parts by mass, provided that a total amount of components (a1) and (a2) is 100 parts by mass,
[Problem]
An object of the present invention is to provide an ink composition for inkjet printing that imparts a printed layer that is excellent in terms of tactile sensation, abrasion resistance, and adherence to a substrate, a printed material and a recorded material that have an ink layer formed from the ink composition, and an inkjet recording method.
[Solution]
An ink composition comprising the following components (A), (B) and (C),
(A) an emulsion of a silicone acrylic copolymer resin in an amount of 0.5 to 20 parts by mass as a solid content,
(B) an emulsion of a urethane resin in an amount of 10 to 79.5 parts by mass as a solid content, and
(C) pigment in an amount of 20 to 89.5 parts by mass, provided that a total mass of the solid content of components (A) and (B) and component (C) is 100 parts by mass,
wherein component (A) is an emulsion of a copolymer of (a1) a polyorganosiloxane represented by the following formula (1) in an amount of 60 to 99 parts by mass with (a2) an acrylic acid ester monomer and/or a methacrylic acid ester monomer in an amount of 1 to 40 parts by mass, provided that a total amount of components (a1) and (a2) is 100 parts by mass,
wherein R1 is, independently of each other, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, precluding the groups defined for R2 and a phenyl group; R2 is, independently of each other, an alkenyl group having 2 to 6 carbon atoms or an alkyl group having 1 to 6 carbon atoms and of which a part of the hydrogen atoms bonded to the carbon atom is substituted with a mercapto group, a vinyl group, an acryloxy group, or a methacryloxy group; R3 is, independently of each other, a phenyl group or the group defined for R1, and at least one of R3s bonded to the silicon atom is a phenyl group; and X is, independently of each other, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, or a hydroxyl group; and a, b, c and d are the number satisfying equations: 0.115≤a/(a+b+c+d)<1, 0.00001≤b/(a+b+c+d)≤0.05, 0≤c/(a+b+c+d)≤0.6, and 0.000001≤d/(a+b+c+d)≤0.24, based on the total number of a, b, c and d.
C09D 11/102 - Encres d’imprimerie à base de résines artificielles contenant des composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone
