2. A neutral color antireflective glass substrates including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.
C03C 23/00 - Other surface treatment of glass not in the form of fibres or filaments
C03C 3/097 - Glass compositions containing silica with 40% to 90% silica by weight containing phosphorus, niobium or tantalum
C03C 3/087 - Glass compositions containing silica with 40% to 90% silica by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
B32B 17/10 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
C03C 3/062 - Glass compositions containing silica with less than 40% silica by weight
C03C 3/064 - Glass compositions containing silica with less than 40% silica by weight containing boron
C03C 3/078 - Glass compositions containing silica with 40% to 90% silica by weight containing an oxide of a divalent metal, e.g. an oxide of zinc
C03C 3/083 - Glass compositions containing silica with 40% to 90% silica by weight containing aluminium oxide or an iron compound
C03C 3/085 - Glass compositions containing silica with 40% to 90% silica by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
C03C 3/089 - Glass compositions containing silica with 40% to 90% silica by weight containing boron
C03C 3/091 - Glass compositions containing silica with 40% to 90% silica by weight containing boron containing aluminium
C03C 4/02 - Compositions for glass with special properties for coloured glass
C03C 4/18 - Compositions for glass with special properties for ion-sensitive glass
2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
C03C 23/00 - Other surface treatment of glass not in the form of fibres or filaments
C03C 3/087 - Glass compositions containing silica with 40% to 90% silica by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
C03C 3/091 - Glass compositions containing silica with 40% to 90% silica by weight containing boron containing aluminium
C03C 3/097 - Glass compositions containing silica with 40% to 90% silica by weight containing phosphorus, niobium or tantalum
3.
Ion implantation process and ion implanted glass substrates
2.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.
The invention concerns a method for manufacturing glass substrates with reduced internal reflectance by ion implantation, comprising ionizing a source gas of N2, O2, Ar, and/or He so as to form a mixture of single charge and multicharge ions of N, O, Ar, and/or He forming a beam of single charge and multicharge ions of N, O, Ar, and/or He, by accelerating with an acceleration voltage comprised between 15 kV and 60 kV and an ion dosage comprised between 1017 ions/cm² and 1018 ions/cm². The invention further concerns glass substrates having reduced internal reflectance, comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
The invention concerns a method for manufacturing scratch-resistant antireflective glass substrates by ion implantation, comprising ionizing a source gas of N2 so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N, by accelerating with an acceleration voltage comprised between 20 kV and 30 kV and an ion dosage comprised between 5 x 1016 ions/cm2 and 1017 ions/cm2. The invention further concerns scratch-resistant antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
The invention concerns a method for manufacturing neutral color antireflective glass substrates by ion implantation, comprising ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A comprised between 20 kV and 25 kV and setting the ion dosage at a value comprised between 6 x 1016 ions/cm2 and - 5.00 x 1015 x A/kV + 2.00 x 1017 ions/cm2. The invention further concerns neutral color antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
The invention concerns a method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A comprised between 13 kV and 40 kV and setting the ion dosage at a value comprised between 5.56 x 1014 x A/kV + 4.78 x 1016 ions/cm2 and -2.22 x 1016 x A/kV + 1.09 x 1018 ions/cm2. The invention further concerns antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
The invention concerns a method for manufacturing heat treatable antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, O2, or Ar, ionizing the source gas so as to form a mixture of single charge and multicharge ions of Ar, N, or O, forming a beam of single charge and multicharge ions of Ar, N, or O by accelerating with an acceleration voltage comprised between 15 kV and 60 kV and setting the ion dosage at a value comprised between 7,5 x 1016 and 7,5 x 1017 ions/cm2. The invention further concerns heat treatable and heat treated antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
The invention concerns a method for manufacturing blue reflective glass substrates by ion implantation, comprising ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A comprised between 15 kV and 35 kV and a dosage D is comprised between -9.33 x 1015 x A/kV + 3.87 x 1017 ions/cm2 and 7.50 x 1017 ions/cm2. The invention further concerns blue reflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
The invention relates to a treatment method for colouring a metal, comprising: a) bombardment of the metal with a beam of singly- or multiply-charged gas ions produced by an electron cyclotron resonance source; b) heat treatment in ambient air so as to colour the implanted metal, comprising the selection of a temperature of between 00°C and 400°C and an exposure time of between 1 minute and 4 hours.
The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 1014 ions/cm² and 2,5 x 1017 ions/cm².The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.
A treatment method of a sapphire material, said method comprising bombardment of a surface of the sapphire material, said surface facing a medium different from the sapphire material, by a single- and/or multi-charged gas ion beam so as to produce an ion implanted layer in the sapphire material, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (0), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). The treatment produces an anti-glare effect on treated materials (61, 62, 63) compared to untreated substrates (60). Said method can be used to obtain a capacitive touch panel having a high transmission in the visible range.
C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
A treatment method for modifying the reflected colour of a sapphire material surface comprising bombardment by a single- and/or multi-charged gas ion beam so as to modify the reflected colour of the treated sapphire material surface (31,32,33) compared to untreated surfaces (30), wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (0), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S).
C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
A method of treating a powder (P) made from cerium oxide using an ion beam (F) in which: - the powder is stirred once or a plurality of times; - the ions of the ion beam are selected from the ions of the elements of the list consisting of helium (He), boron (B), carbon (C), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) - the acceleration voltage of the ions of the beam is between 10 kV and 1000 kV; - the treatment temperature of the powder (P) is less than or equal to Tf/3; - the ion dose per mass unit of powder to be treated is chosen from a range of between 1016 ions/g and 1022 ions/cm2 so as to lower the reduction temperature of the powder made from cerium oxide (P).
A method for treating a glass material with an ion beam in which - the ion acceleration voltage is between 5 kV and 1000 kV; - the temperature of the glass material is less than or equal to the glass-transition temperature; - the dose of nitrogen (N) or oxygen (O) ions per surface unit is chosen from a range of between 1012 ions/cm2 and 10^18 ions/cm2 so as to reduce the contact angle of a drop of water to less than 20° - a prior pre-treatment is carried out with argon (Ar), krypton (Kr) or xenon (Xe) ions in order to increase the durability of the superhydrophilic treatment. Long-lasting superhydrophilic glass materials are advantageously obtained in this way.
A method of treatment using a beam of singly- and multiply-charged gas ions produced by an electron cyclotron resonance (ECR) source of a glass material in which - the ion acceleration voltage of between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; - the ion dose per surface unit in a range of between 1012 ions/cm2 and 1018 ions/cm2 is chosen so as to create an atomic concentration of ions equal to 10% with a level of uncertainty of (+/-)5%. Advantageously this makes it possible to obtain materials made from glass that is non-reflective in the visible range.
The invention relates to a method for grafting monomers (M) into a layer located deep inside an organic material by means of an ion beam (X), wherein: the dose of ions per unit of area is selected from a range of 1012 ions/cm2 to 1018 ions/cm2 so as to create a store of free radicals (1) in a large layer of between 0 and 3000 nm; and free radicals (1) of hydrophilic and/or hydrophobic and/or antibacterial monomers (M) are grafted into said store. Organic materials having water-repellant, hydrophilic, and/or antibacterial properties that are effective over a long period of time can thus be obtained.
Method for treating at least one surface of a part made of a bulk polymer into which multi-energy ions X+ and X2+ are implanted simultaneously, where X is the atomic symbol chosen from the list consisting of helium (He), nitrogen (N), oxygen(O), neon (Ne), argon (Ar), krypton (Kr), and xenon(Xe) and in which the RX ratio, where RX = X+/X2+ with X+ and X2+ being expressed in atomic percentages, is less than or equal to 100, for example less than 20. As a result of the very large reductions in the surface resistivity of the parts thus treated, antistatic properties or even electrostatic charge dissipation properties appear. As an example, the X+ and X2+ ions are supplied by an ECR source.
A61F 9/00 - Methods or devices for treatment of the eyesDevices for putting in contact-lensesDevices to correct squintingApparatus to guide the blindProtective devices for the eyes, carried on the body or in the hand
A61L 2/16 - Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lensesAccessories therefor using chemical substances
C08J 7/18 - Chemical modification with polymerisable compounds using wave energy or particle radiation
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
A61J 1/00 - Containers specially adapted for medical or pharmaceutical purposes
B65D 1/00 - Rigid or semi-rigid containers having bodies formed in one piece, e.g. by casting metallic material, by moulding plastics, by blowing vitreous material, by throwing ceramic material, by moulding pulped fibrous material or by deep-drawing operations performed on sheet material
19.
METHOD FOR TREATING A WELDING STUD WITH AN ION BEAM AND WELDING METHOD IMPLEMENTING SUCH A WELDING STUD
The invention relates to a method for treating a metal welding stud (30) with an ion beam (100) in which: the ions of the beam are nitrogen ions; the ions have an acceleration voltage of 10 kV to 1000 kV; the temperature of the metal welding stud (30) is no higher than Tf; and the load of ions per surface unit is selected in a range of 1014 ions/ cm2 to 1019 ions/ cm2 in order to create a treatment thickness of 10 to 10000 nm. Said method advantageously provides a treatment for reducing welding stud erosion in the context of a method for welding sheet steel to which a zinc-based anti-corrosion treatment has been pre-applied.
The present invention relates to the use of a method for ion implantation into the surface of a material so as to modify the surface properties of said material in order to produce an anti-icing surface, as well as to a method using this technique so as to manufacture a structure having anti-icing surface characteristics.
The invention relates to a method for treating a painted or unpainted composite material using an ion beam, where: the ion acceleration voltage is between 10 kV and 1000 kV; the maximum temperature of the composite material or the paint covering said material is 180°C; the measured amount of ions per surface unit is selected from within a range of 1012 ions/cm2 to 1018 ions/cm2 such that the composite material is cross-linked in order to increase the water drop contact angle by at least 5°. Composite materials having icephobic properties are thus advantageously obtained.
The invention relates to a device for generating a magnetic field so as to be able to create closed isomodule surfaces and to do so in the context of planar symmetry and cusp magnetic structures. The invention also relates to an ECR (Electron Cyclotron Resonance) ion source implementing such a device (M1 and M2) comprising a means for injecting a microwave (B1), a means for injecting gas (B2, B3), a high-voltage-polarised plasma electrode (B6), and a mass-polarised extracting electrode (B7), so as to form an ion beam (B5) which can then be used to treat parts.
The invention relates to a method for treating at least one surface of a solid elastomer part using helium ions. According to the invention, multi-energy ions He+ and He2+ are implanted simultaneously, and the ratio RHe, where RHe = HeVHe2+ with He+ et He2+ expressed in atomic percentage, is less than or equal to 100, for example less than 20, resulting in very significant reductions in the frictional properties of parts treated in this way. The He+ and He2+ ions are supplied, for example, by an ECR source.
The invention relates to a method for the ion beam (100) treatment of a metal layer (10) deposited on a substrate (30), comprising a step in which: the metal layer (10) has a thickness, efrag, of between 0.2 nm and 20 nm; the ion acceleration voltage is between 10 kV and 1000 kV; the temperature of the metal layer (10) is less than or equal to Tf/3; and the ion dose per surface unit is selected from a range of between 1012 ions/cm2 and 1018 ions/cm2 so as to fragment the metal layer (10) in order to produce metal deposits (40) in the form of nanoparticles on the surface of the substrate, having a maximum thickness of between 0.2 nm and 20 nm and a maximum width of between 0.2 nm and 100 nm.
The invention relates to a method for manufacturing a connector element including a substrate on which a layer of gold is deposited, which includes the following consecutive steps: a) providing a substrate (20); b) treating a surface of the substrate (20) by ion bombardment using an ion beam, wherein the ions are selected from among He, N, Ar, Kr, Xe; c) depositing a porous layer of gold (10) by electrolytic means onto the thus-treated surface of the substrate (20); d) treating the porosity of the porous layer of gold (10) by ion bombardment using an ion beam, wherein the ions are selected from among He, N, Ne, Ar, Kr, Xe. The method provides connector elements with enhanced properties.
The present invention relates to a method for treating a metal element subjected to an ion beam, where: - the ions of the beam are selected from among boron, carbon, nitrogen, and oxygen; - the ion acceleration voltage, greater than or equal to 10 kV, and the power of the beam, between 1 W and 10 kW, as well as the ion load per surface unit are selected so as to enable the implantation of ions onto an implantation area with a thickness eI of 0.05 μm to 5 μm, and also enable the diffusion of ions into an implantation/diffusion area with a thickness eI + eP, of 0.1 μm to 1,000 μm; the temperature TZF of the area of the metal element located under the implantation/diffusion area is less than or equal to a threshold temperature TSD. In this manner, metal surfaces having remarkable mechanical characteristics are advantageously produced.
C23C 8/36 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
27.
PROCESS FOR TREATING A METAL PART WITH MULTIPLE-ENERGY HE+ AND HE2+ IONS
Process for treating at least one surface of a solid metal part with helium ions, where multiple-energy He+ and He2+ ions are simultaneously implanted. This results in very large increases in the hardness of the parts thus treated. By way of example, the He+ and He2+ ions are supplied by an ECR source.
C23C 8/36 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
28.
METHOD FOR REDUCING POROSITY OF A METAL DEPOSIT BY IONIC BOMBARDMENT
The invention relates to a method for treating a metal deposit to reduce or eliminate the porosity thereof by bombarding the same with an ion source. The source is, for example, an electron cyclotron resonance (RCE) source. The metal can be gold. The ion bombardment has the effect of sealing the porosity of the metal deposit according to the type, energy, amount and angle of incidence of the ions.
Layer of nickel-titanium alloy containing nitrogen atoms inserted over a thickness of at least 0.05 &mgr;m, for example at least 0.1 &mgr;m, even for example at least 0.2 &mgr;m, or indeed at least 0.5 &mgr;m, and in which the nitrogen concentration profile as a function of the thickness of the layer is a curve resulting from the sum of at least two approximately Gaussian curves. Associated process.
The invention relates to a titanium or titanium alloy layer having nitrogen atoms inserted therein to a depth higher than or equal to 0.05 &mgr;m, e.g. higher than or equal to 0.1 &mgr;m, even higher than or equal to 0.2 &mgr;m, or even higher than or equal to 0.1 &mgr;m, wherein the concentration profile of nitrogen according to the thickness of the layer is a curve obtained by the addition of two essentially Gaussian curves, while the surface nanohardness is higher than or equal to 10 GPa, and/or the Vickers hardness is higher than or equal to 1000 for a 5 g or even 50 g load. The invention also relates to the associated implantation method.
The invention relates to a copper layer or low-alloy copper layer having nitrogen atoms inserted to a thickness higher than or equal to 0.05 &mgr;m, for instance higher than or equal to 0.1 &mgr;m, even higher than or equal to 0.2 &mgr;m, or even higher than or equal to 0.5 &mgr;m, said layer being obtained by implantation.
The invention relates to a gold alloy layer having nitrogen atoms inserted to a thickness higher than or equal to 0.05 &mgr;m and a related multi-energy implantation method.
patents
