A method of controlling particle additions to a fluidized bed reactor includes measuring pressure fluctuations inside the fluidized bed reactor over a selected time period, determining a pressure parameter indicative of amplitudes of the pressure fluctuations, comparing the pressure parameter to a specified threshold, and controlling particle additions to the fluidized bed reactor when the pressure parameter deviates from the specified threshold.
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
A method of controlling particle additions to a fluidized bed reactor includes measuring pressure fluctuations inside the fluidized bed reactor over a selected time period, determining a pressure parameter indicative of amplitudes of the pressure fluctuations, comparing the pressure parameter to a specified threshold, and controlling particle additions to the fluidized bed reactor when the pressure parameter deviates from the specified threshold.
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
3.
METHOD FOR ANNEALING GRANULAR SILICON WITH AGGLOMERATION CONTROL
This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.
This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
B01J 2/16 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic by suspending the powder material in a gas, e.g. in fluidised beds or as a falling curtain
5.
CONTROL OF SILICON OXIDE OFF-GAS TO PREVENT FOULING OF GRANULAR SILICON ANNEALING SYSTEM
This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.
This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.
This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.
C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
Reaction chamber liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed. The liners include an aperture and a cavity configured to receive a reactor component, such as a probe, a sensor, a nozzle, a feed line, a sampling line, a heating/cooling component, or the like. In some embodiments, the liner is a segmented liner comprised of vertically stacked or laterally joined segments, wherein at least one segment includes an aperture and a cavity configured to receive a reactor component.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A feeder operable to convey a divided solids material comprises a conduit and an actuator. The conduit has a hollow body with a length, a first end, a second end opposite the first end and a displaceable body segment defined along at least a portion of the length. The displaceable body segment has at least a first fixable location positionable at a first fixed location. The actuator is positioned to apply force to the conduit and is controllable to cause selected flow of divided solids material in a feed direction extending generally from the first end to the second end. Methods are also disclosed.
B65G 65/30 - Methods or devices for filling or emptying bunkers, hoppers, tanks, or like containers, of interest apart from their use in particular chemical or physical processes or their application in particular machines, e.g. not covered by a single other subclass
F16L 11/04 - Hoses, i.e. flexible pipes made of rubber or flexible plastics
An oscillatory feeder operable to convey a flowable solid material has a tubular body and a displaceable body segment. The tubular body has at least one first end, at least one second end opposite the first end and a displaceable body segment between the first and second ends. The displaceable body segment has a first fixable location positionable at a first fixed location and a second fixable location positionable at a second fixed location. The actuator is attached to the displaceable body segment and controllable to cause selected displacement of the body segment and attached actuator and corresponding selected flow of solid material within the displaceable body segment in a feed direction extending generally from the first end to the second end.
B65G 11/20 - Auxiliary devices, e.g. for deflecting, controlling speed of, or agitating, articles or solids
B65G 47/20 - Arrangements or applications of hoppers or chutes the hoppers or chutes being movable
B65G 25/02 - Conveyors comprising a cyclically-moving, e.g. reciprocating, carrier or impeller which is disengaged from the load during the return part of its movement the carrier or impeller having different forward and return paths of movement, e.g. walking-beam conveyors
11.
Tumbling device for the separation of granular polysilicon and polysilicon powder
Methods and apparatus for separating polysilicon powder from a mixture of granular polysilicon and polysilicon powder are disclosed. The method includes tumbling the polysilicon material in a tumbling device while flowing humidified sweep gas through the tumbling device. Also disclosed are compositions including granulate polysilicon or polycrystalline silicon, in some examples, including a coating layer consisting essentially of water.
B07B 4/08 - Separating solids from solids by subjecting their mixture to gas currents while the mixtures are supported by sieves, screens, or like mechanical elements
Methods and apparatus for separating polysilicon powder from a mixture of granular polysilicon and polysilicon powder are disclosed. The method includes tumbling the polysilicon material in a tumbling device while flowing humidified sweep gas through the tumbling device. Also disclosed are compositions including granulate polysilicon or polycrystalline silicon, in some examples, including a coating layer consisting essentially of water.
Fine particulate material is separated from a mixture of coarse particulate material and fine particulate material by passing sweep gas through the chamber of a rotating tumbler drum that contains an introduced material that is a mixture of coarse particulate material and fine particulate material. In particular, polysilicon powder may be separated from granular polysilicon. Seals are present, at locations where gas-conveying parts of the apparatus move relative to one another, to block the escape of sweep gas to the atmosphere surrounding the apparatus. A downstream seal extends between a stationary exhaust duct and an exhaust tube that rotates with the tumbler drum. The seal is protected by a flow of clean flush gas that is delivered to a gap between the exhaust duct and the exhaust tube. A dust collection assembly receives separated fine particulate material. Tumbled particulate material, having a reduced percentage by weight of fine particulate material than the introduced polysilicon material, is collected from the tumbler drum.
Fine particulate material is separated from a mixture of coarse particulate material and fine particulate material by passing sweep gas through the chamber of a rotating tumbler drum that contains an introduced material that is a mixture of coarse particulate material and fine particulate material. In particular, polysilicon powder may be separated from granular polysilicon. Seals are present, at locations where gas-conveying parts of the apparatus move relative to one another, to block the escape of sweep gas to the atmosphere surrounding the apparatus. A downstream seal extends between a stationary exhaust duct and an exhaust tube that rotates with the tumbler drum. The seal is protected by a flow of clean flush gas that is delivered to a gap between the exhaust duct and the exhaust tube.
B07B 4/08 - Separating solids from solids by subjecting their mixture to gas currents while the mixtures are supported by sieves, screens, or like mechanical elements
B07B 11/02 - Arrangement of air or material conditioning accessories
Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer shell, an insulation layer inwardly of the outer shell, a concentric inner shell inwardly of the outer shell, and a concentric liner that is positioned inwardly of the inner shell and that defines a reactor chamber. The inner shell and liner are sealed together at their bottoms by an O-ring seal arrangement to prevent gas in the reactor chamber from entering a space between the inner shell and the liner. A central inlet nozzle produces a vertical gas plume in the reactor chamber.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
Embodiments of a reflective surface and a reflector comprising a reflective surface for use in a thermal decomposition reactor are disclosed. Methods for using the reflective surface, or reflector comprising the reflective surface, to manage a temperature profile in a silicon rod grown in the thermal decomposition reactor are also disclosed. The reflective surface is configured to receive radiant heat energy emitted from an energy emitting region of an elongated polysilicon body grown during chemical vapor deposition onto a silicon filament and reflect at least a portion of the received radiant heat energy to a reflected energy receiving region of the elongated polysilicon body or to a reflected energy receiving region of a second elongated polysilicon body, to thereby add radiant heat energy to the reflected energy receiving region.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
17.
Apparatus and method for silicon powder management
Methods and apparatus for separating polysilicon powder from a mixture of granular polysilicon and polysilicon powder are disclosed. The method includes tumbling the polysilicon material in a tumbling device. The tumbling device includes a tumbler drum having one or more lifting vanes spaced apart from one another and extending longitudinally along an interior surface of the tumbler drum. The lifting vanes facilitate separation of polysilicon powder and granules as the tumbler drum is rotated about its longitudinal axis of rotation.
Polysilicon crystalline rods are formed by chemical vapor deposition in the reaction chamber of a Siemens reactor. Filament holding assemblies secure vertically extending filaments to electrodes located along the floor of the reactor. A filament holding assembly includes a chuck support member that is mounted on an electrode and that has an upwardly tapering side surface. A chuck is seated on the chuck support member with at least a portion of the chuck support member received within a cavity defined in the base of the chuck with the side surface of the chuck support member engaging the surface that defines the cavity. The cavity can sized and shaped such that a gap is defined between the distal end of the chuck support member and an end wall surface of the cavity. The chuck has an upwardly opening receptacle that receives and holds the end portion of an upwardly extending filament.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
19.
APPARATUS AND METHOD FOR SILICON POWDER MANAGEMENT
Methods and apparatus for separating polysilicon powder from a mixture of granular polysilicon and polysilicon powder are disclosed. The method includes tumbling the polysilicon material in a tumbling device. The tumbling device includes a tumbler drum having one or more lifting vanes spaced apart from one another and extending longitudinally along an interior surface of the tumbler drum. The lifting vanes facilitate separation of polysilicon powder and granules as the tumbler drum is rotated about its longitudinal axis of rotation.
C04B 35/14 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on silica
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
20.
SEGMENTED LINER AND TRANSITION SUPPORT RING FOR USE IN A FLUIDIZED BED REACTOR
Transition support rings for joining tubular segments of different inner cross-sectional dimensions to make segmented liners for use in a fluidized bed reactor (FBR) for making polysilicon-coated granulate material are disclosed. Segmented liners comprising the transition support rings and fluidized bed reactors including segmented liners are also disclosed.
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
B01J 19/02 - Apparatus characterised by being constructed of material selected for its chemically-resistant properties
B01J 13/00 - Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided forMaking microcapsules or microballoons
Embodiments of an obstructing member and methods for its use in a fluidized bed reactor are disclosed. The obstructing member comprises a plurality of receiving members, each receiving member comprising a tubular wall defining a passageway dimensioned to receive an internal reactor component, and a plurality of connecting elements connecting the receiving members, wherein the obstructing member occupies from 15-60% of a horizontal cross-section of a reaction chamber of the fluidized bed reactor.
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
23.
HIGH-PURITY SILICON TO FORM SILICON CARBIDE FOR USE IN A FLUIDIZED BED REACTOR
Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.
B01J 19/02 - Apparatus characterised by being constructed of material selected for its chemically-resistant properties
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.
B01J 19/02 - Apparatus characterised by being constructed of material selected for its chemically-resistant properties
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
25.
Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor
Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.
B01J 19/02 - Apparatus characterised by being constructed of material selected for its chemically-resistant properties
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
C01B 37/00 - Compounds having molecular sieve properties but not having base-exchange properties
C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
B01J 2/16 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic by suspending the powder material in a gas, e.g. in fluidised beds or as a falling curtain
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C04B 35/565 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbides based on silicon carbide
C04B 37/00 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating
F27D 1/04 - CasingsLiningsWallsRoofs characterised by the form of the bricks or blocks used
B01J 2/00 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic
Embodiments of an obstructing member and methods for its use in a fluidized bed reactor are disclosed. The obstructing member comprises a plurality of receiving members, each receiving member comprising a tubular wall defining a passageway dimensioned to receive an internal reactor component, and a plurality of connecting elements connecting the receiving members, wherein the obstructing member occupies from 15-60% of a horizontal cross-section of a reaction chamber of the fluidized bed reactor.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
27.
NON-CONTAMINATING BONDING MATERIAL FOR SEGMENTED SILICON CARBIDE LINER IN A FLUIDIZED BED REACTOR
Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
28.
JOINT DESIGN FOR SEGMENTED SILICON CARBIDE LINER IN A FLUIDIZED BED REACTOR
Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
B01J 19/02 - Apparatus characterised by being constructed of material selected for its chemically-resistant properties
29.
Segmented liner and transition support ring for use in a fluidized bed reactor
Transition support rings for joining tubular segments of different inner cross-sectional dimensions to make segmented liners for use in a fluidized bed reactor (FBR) for making polysilicon-coated granulate material are disclosed. Segmented liners comprising the transition support rings and fluidized bed reactors including segmented liners are also disclosed.
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
B01J 19/24 - Stationary reactors without moving elements inside
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/22 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
31.
RECOVERY OF HYDROHALOSILANES FROM REACTION RESIDUES
Methods of recovering hydrohalosilanes from reaction residues are disclosed. An inorganic halosilane slurry comprising (i) tetrahalosilane, trihalosilane, dihalosilane, or any combination thereof, (ii) silicon particles, and (iii) heavies is passed through a thin-film dryer to remove halosilanes and form a solid residue comprising silicon particles. Heavies also may be removed as the slurry passes through the thin-film dryer.
Methods of recovering hydrohalosilanes from reaction residues are disclosed. An inorganic halosilane slurry comprising (i) tetrahalosilane, trihalosilane, dihalosilane, or any combination thereof, (ii) silicon particles, and (iii) heavies is passed through a thin-film dryer to remove halosilanes and form a solid residue comprising silicon particles. Heavies also may be removed as the slurry passes through the thin-film dryer.
Apparatus and methods for consolidating granular silicon and determining trace elements content of the consolidated silicon are disclosed. Silicon granules are placed in a vessel, and a silicon slug of known purity is embedded at least partially in the granules. The slug is preheated to a temperature sufficient to couple with an induction heater. As the silicon slug melts, silicon granules adjacent the molten silicon also melt. The vessel passes through an induction coil to successively inductively heat and melt regions of the silicon granules from the leading end to the trailing end with each region solidifying as the molten silicon exits the induction coil to provide a multicrystalline silicon ingot. The multicrystalline silicon ingot is sliced into wafers, which are analyzed by low-temperature Fourier transform infrared spectroscopy to determine levels of trace elements in the ingot.
Apparatus and methods for consolidating granular silicon and determining trace elements content of the consolidated silicon are disclosed. Silicon granules are placed in a vessel, and a silicon slug of known purity is embedded at least partially in the granules. The slug is preheated to a temperature sufficient to couple with an induction heater. As the silicon slug melts, silicon granules adjacent the molten silicon also melt. The vessel passes through an induction coil to successively inductively heat and melt regions of the silicon granules from the leading end to the trailing end with each region solidifying as the molten silicon exits the induction coil to provide a multicrystalline silicon ingot. The multicrystalline silicon ingot is sliced into wafers, which are analyzed by low-temperature Fourier transform infrared spectroscopy to determine levels of trace elements in the ingot.
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solidsPreparation of samples therefor
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
G01N 21/35 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
35.
POLYSILICON TRANSPORTATION DEVICE AND A REACTOR SYSTEM AND METHOD OF POLYCRYCRYSTALLINE SILICON PRODUCTION THEREWITH
A method and system for reduction or mitigation of metal contamination of polycrystalline silicon are disclosed. A conveyance device comprising a flexible synthetic resin tube having an inner surface at least partially coated with an inner layer comprising elastomeric microcellular polyurethane is disclosed for use in fluidized bed reactor operations associated with manufacture and product handling procedures for ultra pure granular polysilicon. Use of the conduit to effect passage of the polysilicon mitigates foreign metal contact contamination from sources otherwise typically present in such manufacturing units.
A method and fluidized bed reactor for reducing or eliminating contamination of silicon-coated particles are disclosed. The metal surface of one or more fluidized bed reactor components is at least partially coated with a hard protective layer comprising a material having an ultimate tensile strength of at least 700 MPa at 650° C.
C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
37.
METHOD AND APPARATUS FOR PRODUCTION OF SILANE AND HYDROHALOSILANES
Silane and hydrohalosilanes of the general formula HySiX4-y (y = 1, 2, or 3) are produced by reactive distillation in a system that includes a fixed-bed catalytic redistribution reactor that can be back-flushed during operation.
4-y (y=1, 2, or 3) are produced by reactive distillation in a system that includes a fixed-bed catalytic redistribution reactor that can be back-flushed during operation.
B01D 3/00 - Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes
B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds
B01J 8/04 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds the fluid passing successively through two or more beds
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
B01J 19/24 - Stationary reactors without moving elements inside
39.
CORROSION AND FOULING REDUCTION IN HYDROCHLOROSILANE PRODUCTION
Methods for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient hydrogen is added to a silicon tetrachloride process stream to inhibit iron (II) chloride formation and reduce iron silicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof. Trichlorosilane also may be added to the silicon tetrachloride process stream.
Embodiments of a reaction chamber liner for use in a heated silicon deposition reactor are disclosed. The liner has an upper portion, a mid portion comprising a material other than a stainless steel alloy, and a lower portion comprising a martensitic stainless steel alloy. The liner's upper portion may have a composition substantially similar to the lower portion.
C23C 30/00 - Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
Embodiments of a probe assembly for a fluid bed reactor are disclosed. The probe assembly includes a fluid bed reactor (FBR) member, and a pressure tap comprising a wall defining a passageway within which the FBR member is located. Exemplary FBR members include, but are not limited to, a thermocouple, a seed pipe, a particle sampling line, a gas sampling line, a gas feed line, a heater, a second pressure tap, or a combination thereof. Disclosed embodiments of the probe assembly reduce or eliminate the need for support rods and rings within the fluid bed reactor, reduce component fouling within the reactor, and/or reduce product contamination.
B01L 99/00 - Subject matter not provided for in other groups of this subclass
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
42.
METHOD AND APPARATUS TO REDUCE CONTAMINATION OF PARTICLES IN A FLUIDIZED BED REACTOR
A method and fluidized bed reactor for reducing or eliminating contamination of silicon-coated particles are disclosed. The metal surface of one or more fluidized bed reactor components is at least partially coated with a hard protective layer comprising a material having an ultimate tensile strength of at least 700 MPa at 650°C.
B01J 19/02 - Apparatus characterised by being constructed of material selected for its chemically-resistant properties
C30B 28/14 - Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
43.
A CONTAINER AND METHOD OF MITIGATING METAL-CONTACT CONTAMINATION OF POLYSILICON
The present disclosure concerns reduction or mitigation of metal-contamination of polycrystalline silicon when held or stored in containers at least partially constructed of metal and/or having polysilicon contact surfaces at least partially of metal. In particular, the disclosure relates to a method of mitigating metal contamination of polycrystalline silicon from contact with a metal surface of a container by providing the surface with a protective layer comprising a microcellular elastomeric polyurethane.
Embodiments of a probe assembly for a fluid bed reactor are disclosed. The probe assembly includes a fluid bed reactor (FBR) member, and a pressure tap comprising a wall defining a passageway within which the FBR member is located. Exemplary FBR members include, but are not limited to, a thermocouple, a seed pipe, a particle sampling line, a gas sampling line, a gas feed line, a heater, a second pressure tap, or a combination thereof. Disclosed embodiments of the probe assembly reduce or eliminate the need for support rods and rings within the fluid bed reactor, reduce component fouling within the reactor, and/or reduce product contamination.
G01K 7/02 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using thermoelectric elements, e.g. thermocouples
C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
45.
THREADED NOZZLE AND CLOSABLE NOZZLE VALVE ASSEMBLY
Embodiments of a nozzle assembly and a closable valve assembly for use in a fluid bed reactor system are disclosed. The nozzle assembly includes a first member that extends upwardly through a bottom wall of a fluid bed reaction chamber, and a second member. The first and second members are detachably fitted together via threads on each member. The second member can be removed and/or replaced, thereby facilitating fluid bed reactor maintenance. The closable valve assembly is connected to a nozzle, and includes a valve body and a gate pivotally connected to the valve body. The gate is movable between a first position at least partially covering the nozzle orifice in the absence of gas flow through the orifice, and a second position wherein the orifice is not covered when gas flows through the orifice.
B01J 19/26 - Nozzle-type reactors, i.e. the distribution of the initial reactants within the reactor is effected by their introduction or injection through nozzles
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
46.
A REACTOR SYSTEM AND METHOD OF POLYCRYSTALLINE SILICON PRODUCTION THEREWITH
A method and system for reduction or mitigation of metal contamination of polycrystalline silicon are disclosed. Metal contamination of granulate polycrystalline silicon, from contact with a metal surface of components of the supporting transportation and auxiliary infrastructure of a fluidized bed reactor unit, is mitigated by use of a protective coating comprising a microcellular elastomeric polyurethane.
Embodiments of a system and process for the production of ultra-high purity silane and hydrohalosilanes of the general formula HySiX4-y (y = 1, 2, or 3) by a reactive distillation method are disclosed.
Embodiments of a method for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient trichlorosilane is included in a silicon tetrachloride process stream to minimize hydrogen chloride formation, thereby inhibiting iron (II) chloride formation and reducing iron silicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof.
Embodiments of a method for reducing iron silicide and/or iron phosphide fouling and/or corrosion in a hydrochlorosilane production plant are disclosed. Sufficient trichlorosilane is included in a silicon tetrachloride process stream to minimize hydrogen chloride formation, thereby inhibiting iron (II) chloride formation and reducing iron silicide and/or iron phosphide fouling, superheater corrosion, or a combination thereof.
Apparatus and methods are described for transporting and cooling silicon- coated granules produced in a fluidized bed reactor. The described system allows consistent silicon-coated granule production with fewer impurities than traditional silicon granule coolers. Granules flow from the reactor into a cooling vessel and subsequently are transported to a post production treatment system below the cooler. The cooling vessel is constructed as a single standpipe, vertical or near vertical, with a pipe diameter that allows granules to flow freely while providing adequate residence time for cooling. The standpipe is cooled by flowing a cooling medium through a passageway that extends along an external surface of the standpipe. The passageway can be provided by a pipe jacket or conduit.
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
B01J 2/06 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic by dividing the liquid material into drops, e.g. by spraying, and solidifying the drops in a liquid medium
B01J 19/24 - Stationary reactors without moving elements inside
Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner inwardly of the heater, a central inlet nozzle, a plurality of fluidization nozzles, at least one cooling gas nozzle, and at least one product outlet. The system may include a removable concentric sleeve inwardly of the liner. In particular systems the central inlet nozzle is configured to produce a primary gas vertical plume centrally in the reactor chamber to minimize silicon deposition on reactor surfaces.
B05D 7/00 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
B05B 7/00 - Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
B05C 5/00 - Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
B05C 19/00 - Apparatus specially adapted for applying particulate materials to surfaces
C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A polysilicon system comprises polysilicon in at least three form-factors, or shapes, providing for an enhanced loading efficiency of a mold or crucible. The system is used in processes to manufacture multi-crystalline or single crystal silicon.
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
54.
REACTOR SYSTEM AND METHOD OF POLYCRYSTALLINE SILICON PRODUCTION THEREWITH
Embodiments of a method for reducing or mitigating metal contamination of polycrystalline silicon are disclosed. In particular the disclosure relates to a method of mitigating metal contamination of granulate polycrystalline silicon, during its manufacture in a fluidized bed reactor unit, resulting from contact with a metal surface of components of the supporting transportation and auxiliary infrastructure by use of a protective coating comprising silicon or a silicon-containing material.
Embodiments of a system and method for melting feedstock and casting ingots are disclosed. The system comprises a feedstock source, a stationary melting furnace, and one or more solidification modules capable of receiving molten feedstock from the melting furnace. In some embodiments, the system further includes a feed system for transferring feedstock from the feedstock source to the melting furnace. Feedstock is fed into the melting furnace and heated to produce molten feedstock. Molten feedstock flows into a solidification crucible within the solidification module. The solidification crucible is cooled to provide directional solidification and production of an ingot. The melting furnace may include a thermal valve system to prevent molten feedstock from flowing into the solidification crucible until substantially all of the feedstock within the melting furnace is molten. In some embodiments, the feedstock consists essentially of silicon and a multi-crystalline silicon ingot is produced.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
A chemical vapor deposition (CVD) reactor system has a reaction chamber enclosed by a reaction chamber wall with an inner surface disposed towards the interior of the chamber. At least a portion of the wall is a heat control layer that faces the chamber and that consists of a material, such as electrolytic ally deposited nickel, that has an emissivity coefficient, as measured at 300K, of 0.1 or less and a hardness of at least 3.5 Moh. Polycrystalline silicon is produced from silicon-rich gases using such a CVD reactor system.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
01 - Chemical and biological materials for industrial, scientific and agricultural use
Goods & Services
(1) Industrial chemicals, namely, silicon and silanes; chemical products containing silicon for use in the manufacture of photovoltaic products, semi-conductors, and electronics, namely silicon rods, chunks, chips, granules and powders for use in the manufacture of photovoltaic cells, semi-conductor devices, semi-conductor wafers, microchips and integrated circuits; silicon for industrial use, namely, silicon for use in making solar cells, silicon wafers, solar cell modules, solar panels, semi-conductors, and electronics; and industrial chemicals in gas form, namely, silanes.
(2) Industrial chemicals, namely, silicon and silanes.
Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner inwardly of the heater, a central inlet nozzle, a plurality of fluidization nozzles, at least one cooling gas nozzle, and at least one product outlet. The system may include a removable concentric sleeve inwardly of the liner. In particular systems the central inlet nozzle is configured to produce a primary gas vertical plume centrally in the reactor chamber to minimize silicon deposition on reactor surfaces.
C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner inwardly of the heater, a central inlet nozzle, a plurality of fluidization nozzles, at least one cooling gas nozzle, and at least one product outlet. The system may include a removable concentric sleeve inwardly of the liner. In particular systems the central inlet nozzle is configured to produce a primary gas vertical plume centrally in the reactor chamber to minimize silicon deposition on reactor surfaces.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
C23F 1/00 - Etching metallic material by chemical means
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
C23C 16/22 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
Silicon granules are produced by chemical vapor deposition on seed particles inside a chamber within a fluidized bed reactor. The chamber contains an obstructing member, or bubble breaker, which is sized and shaped to restrict the growth of bubbles inside the chamber and which has interior passageways through which a heated fluid passes to transfer heat to gas inside the chamber.
B01J 8/34 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique with stationary packing material in the fluidised bed, e.g. bricks, wire rings, baffles
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
67.
SOLIDIFICATION OF MOLTEN MATERIAL OVER MOVING BED OF DIVIDED SOLID MATERIAL
Systems and methods for converting a powder to a solid mass are disclosed. A furnace is provided to melt the powder and deliver a stream of resulting molten material to a bed of beads on a vibratory conveyor. Cooling gas flows through nozzles positioned above and along the conveyor to cool the beads and liquid. The liquid solidifies and forms a solid mass, incorporating beads from the bed. The conveyor can be periodically stopped to produce a plurality of discrete solid masses. Masses and unincorporated beads fall into a collection container. Unincorporated beads pass through a screening device and are returned to the bed of beads. A make-up bead system adds beads to the bed as needed to maintain a suitable bed depth. In some embodiments, the powder and beads consist essentially of silicon, and the solid masses formed are suitable for preparing silicon ingots.
Silicon granules are produced by chemical vapor deposition on seed particles inside a chamber within a fluidized bed reactor. The chamber contains an obstructing member, or bubble breaker, which is sized and shaped to restrict the growth of bubbles inside the chamber and which has interior passageways through which a heated fluid passes to transfer heat to gas inside the chamber.
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
A method for producing silicon or a reactive metal is disclosed herein that includes: introducing a silicon-bearing feed or reactive metal-bearing feed into a reactor chamber, wherein the reactor chamber includes a reactor chamber wall having (i) an inside surface facing a reaction space and (ii) an opposing outside surface; generating a first thermal energy within the reaction space sufficient to generate a liquid silicon product or a liquid reactive metal product; generating a second thermal energy exterior to the reactor chamber wall such that a heat flow from the second thermal energy initially impacts the outside surface of the reactor chamber wall; and establishing an inside surface wall temperature within a temperature range that is above or below a melting point temperature of the silicon or the reactive metal by controlling the first thermal energy source and the second thermal energy source.
A method for producing solid multicrystalline silicon ingots or wafers, comprising: introducing a silicon-bearing gas into a reactor chamber, wherein the reaction chamber includes a reactor chamber wall having (i) an inside surface facing a reaction space and (11) an opposing outside surface, and a product outlet; generating a plasma in the reactor space, thermally decomposing the silicon-bearing gas by subjecting the silicon- bearing gas to a sufficient temperature to produce liquid silicon; maintaining the inside surface of the reactor chamber wall at an equilibrium temperature below the melting point temperature of silicon while thermally decomposing the silicon-bearing gas; and introducing the liquid silicon from the product outlet directly into a module for casting the liquid silicon into solid multicrystalline silicon ingots or multicrystalline silicon wafer.
C30B 28/14 - Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
Polysilicon is formed by pyrolytic decomposition of a silicon-bearing gas and deposition of silicon onto fluidized silicon particles. Multiple submerged spout fluidized bed reactors (10) and reactors having secondary orifices (20) are disclosed.
B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
Polysilicon is deposited onto a tube or other hollow body. The hollow body replaces the slim rod of a conventional Siemens-type reactor and may be heated internally with simple resistance elements. The hollow body diameter is selected to provide a surface area much larger than that of a silicon slim rod. The hollow body material may be chosen such that, upon cooling, deposited polysilicon readily separates from the hollow body due to differences in contraction and falls into a collection container.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
