Abstract

The invention provides a porous polyurethane polishing pad that includes a porous matrix. The matrix has large pores that extend upward from a base surface and open to an upper surface. The large pores are interconnected with tertiary pores, a portion of the large pores is open to a top polishing surface and at least a portion of the large pores extend to the top polishing surface. Spring-arm sections connect lower and upper sections of the large pores. The spring-arm sections all are in a same horizontal direction as measured from the vertical orientation and they combine for increasing compressibility of the polishing pad and contact area of the top polishing surface during polishing.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/20 - Lapping pads for working plane surfaces
• B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
• B24D 3/00 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents
• B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials

Abstract

A polishing pad for chemical mechanical polishing comprising a porous polishing layer having a top polishing surface, a sub-pad located opposite from the top polishing surface, the sub-pad having a bottom sub-pad surface, and a window for transmitting a signal wave through the polishing pad to a substrate to be polished and back through the polishing pad for endpoint detection, the window having a top window surface, a bottom window surface, and side edges, wherein the top window surface is recessed from the top polishing surface, the bottom window surface is substantially coplanar with the bottom sub-pad surface, the window extending from the bottom sub-pad surface to the top window surface and the side edges are in contact with the polishing material and the sub-pad material and wherein the window is non-porous.

IPC Classes  ?

• B24B 37/20 - Lapping pads for working plane surfaces
• B24B 37/013 - Devices or means for detecting lapping completion

Abstract

A polishing pad for chemical mechanical polishing comprising a polishing layer having a top polishing surface, a bottom surface and a thickness. The polishing layer comprises a porous polishing material and a window region. An exposed top surface of the transparent window is recessed from the top polishing surface. The transparent window extends from the recess region to the bottom surface of the polishing pad. The transparent window is non-porous and a portion of the top surface of the peripheral portion adjacent to the transparent window is coplanar with the top surface of the transparent window and the exposed bottom surface of the transparent window is coplanar with the bottom surface of the polishing layer.

IPC Classes  ?

• B24B 37/20 - Lapping pads for working plane surfaces

Abstract

A polishing pad for chemical mechanical polishing comprises a polishing layer having a top polishing surface, a sub-pad located opposite from the top polishing surface, the sub-pad comprising a sub-pad material and having a bottom sub-pad surface defining a bottom surface of the polishing pad, and a window for transmitting a signal wave through the polishing pad to a substrate to be polished and back through the polishing pad for endpoint detection, the window having a top window surface, a bottom window surface, and side edges, wherein the top window surface is recessed from the top polishing surface, the bottom window surface is substantially coplanar with the bottom sub-pad surface, and the side edges are in contact with the polishing material and the sub-pad material.

IPC Classes  ?

• B24B 37/20 - Lapping pads for working plane surfaces

Abstract

A polishing pad suitable for chemical mechanical polishing comprising: a polishing layer having a top surface having a groove pattern, the groove pattern comprises a plurality of first grooves having a first groove cross-section, the plurality of first grooves defining a plurality of regions between adjacent first grooves; and, in a portion of the plurality of region between adjacent first grooves, a plurality of second grooves having a second groove cross-section, wherein the second groove cross-section is less than 50 percent of the first groove cross-section, wherein the polishing layer is further characterized by having a specific gravity of at least 1.05 grams per cubic centimeter.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Abstract

The polishing pad has a polymeric matrix, a polishing surface useful for polishing at least one of semiconductor, magnetic and optical substrates and a bottom surface; a porous subpad adhered to the bottom surface of the polishing pad. The porous subpad includes a nonporous microlayer for securing the polishing pad to the porous subpad. The porous polymer network contains i) a single layer of closed cell micropores adjacent the nonporous microlayer for transitioning compressive forces from the bottom surface of the polishing pad to the porous subpad; and ii) a multilayer of closed cell, open cell or a mixture of closed and open cell micropores adjacent the single layer of closed cell micropores.

IPC Classes  ?

• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Abstract

The invention provides a porous subpad for a chemical mechanical polishing pad comprising a polishing layer having a polymeric matrix, a polishing surface useful for polishing at least one of semiconductor, magnetic and optical substrates and a bottom surface. The porous subpad includes a non-porous layer having a polymeric matrix and a multilayer having a micro-scale negative impression of the bottom surface of the polishing pad. The multilayer is closed cell, open cell or a mixture of closed and open cell micropores that are gas filled; and the multilayer remains gas filled during an entire polishing life of the polishing pad.

IPC Classes  ?

• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Abstract

The present disclosure pertains an aqueous inkjet ink having self-dispersing pigment or pigment dispersed by polyurethane or acrylic dispersant polymer with alkaline neutralized carboxyl functional group, polyurethane or acrylic binder particles, and less than 3 wt % of surface modified silanized colloid silica particles with particle size smaller than 30 nm as an additive.

IPC Classes  ?

• C09D 11/322 - Pigment inks
• C09D 11/38 - Inkjet printing inks characterised by non-macromolecular additives other than solvents, pigments or dyes

Abstract

The present invention concerns a chemical mechanical polishing pad having a polishing layer. The polishing layer contains an extruded sheet. The extruded sheet is a photopolymerizable composition containing a block copolymer, a UV curable acrylate, and a photoinitiator.

IPC Classes  ?

• B24B 37/00 - Lapping machines or devicesAccessories
• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
• B24D 3/28 - Resins
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

An aqueous alkaline chemical mechanical polishing composition includes a quaternary ammonium compound having a phenyl group which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing.

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• C09K 13/00 - Etching, surface-brightening or pickling compositions
• C09K 13/02 - Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
• H01L 21/3105 - After-treatment

Abstract

A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of liquid aromatic diamine to the total moles of small chain difunctional polyols and liquid aromatic diamine ranges from 15:85 to 40:60, wherein, the reaction mixture comprises 48 to 68 wt. % hard segment materials.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
• C08G 18/10 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
• C08G 18/12 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step using two or more compounds having active hydrogen in the first polymerisation step
• C08G 18/18 - Catalysts containing secondary or tertiary amines or salts thereof
• C08G 18/28 - Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
• C08G 18/32 - Polyhydroxy compoundsPolyaminesHydroxy amines
• C08G 18/38 - Low-molecular-weight compounds having hetero atoms other than oxygen
• C08G 18/48 - Polyethers
• C08G 18/58 - Epoxy resins
• C08G 18/65 - Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
• C08G 18/66 - Compounds of groups , , or
• C08G 18/76 - Polyisocyanates or polyisothiocyanates cyclic aromatic
• C08G 18/80 - Masked polyisocyanates
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

2-amine adduct sufficient to reduce the density of a CMP polishing pad made from the two-component reaction mixture to from 0.2 to 0.50 g/mL, wherein the reaction mixture comprises 60 to 75 wt. % of hard segment materials, based on the total weight of the reaction mixture.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• C08G 18/10 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
• C08G 18/12 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step using two or more compounds having active hydrogen in the first polymerisation step
• C08G 18/18 - Catalysts containing secondary or tertiary amines or salts thereof
• C08G 18/24 - Catalysts containing metal compounds of tin
• C08G 18/32 - Polyhydroxy compoundsPolyaminesHydroxy amines
• C08G 18/48 - Polyethers
• C08G 18/66 - Compounds of groups , , or
• C08G 18/76 - Polyisocyanates or polyisothiocyanates cyclic aromatic
• C09D 175/04 - Polyurethanes
• C09D 175/08 - Polyurethanes from polyethers
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

An acid chemical mechanical polishing composition polishes silicon nitride over silicon dioxide and simultaneously inhibits damage to the silicon dioxide. The acid chemical mechanical polishing composition includes polyvinylpyrrolidone polymers, anionic functional colloidal silica abrasive particles and an amine carboxylic acid. The pH of the acid chemical mechanical polishing composition is 5 or less.

IPC Classes  ?

• G09G 1/02 - Storage circuits
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
• H01L 21/3105 - After-treatment
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents

Abstract

A process for chemical mechanical polishing cobalt to planarize the surface and remove at least some of the cobalt from a substrate. The process includes providing a polishing composition, containing, as initial components: water; an oxidizing agent; colloidal silica abrasive particles; aspartic acid or salts thereof; a phosphonic acid having an alkyl group of greater than ten carbon atoms, wherein the phosphonic acid having the alky group of greater than ten carbon atoms is included in amounts sufficient to enable high cobalt removal rates of ≥2000 Å/min and substantial cobalt corrosion inhibition; and providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away and cobalt corrosion is substantially inhibited.

IPC Classes  ?

• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/321 - After-treatment
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces

Abstract

A chemical mechanical polishing composition for polishing dielectric substrates includes colloidal silica abrasive particles stabilized with polyalkoxylated organosilanes.

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/321 - After-treatment

Abstract

A composition and method for chemical mechanical polishing a substrate containing tungsten to at least inhibit corrosion of the tungsten. The composition includes, as initial components: water; an oxidizing agent; a select polyethoxylated tallow amine; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and corrosion of the tungsten is inhibited.

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/321 - After-treatment

Abstract

Chemical mechanical polishing compositions contain polyethoxylated amines, phosphoric acid or salts thereof, and positively charged nitrogen containing colloidal silica abrasive particles. The chemical mechanical polishing compositions are used in polishing methods for suppressing the removal rate of amorphous silicon while maintaining tunable oxide to silicon nitride removal rate ratios. The chemical mechanical polishing compositions can be used in front-end-of line semiconductor processing.

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• H01L 21/3105 - After-treatment
• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; guar gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• C09K 13/00 - Etching, surface-brightening or pickling compositions
• C23F 1/26 - Acidic compositions for etching refractory metals
• H01L 21/321 - After-treatment

Abstract

A process for chemical mechanical polishing a substrate containing tungsten to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics is disclosed. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; xanthan gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; optionally a surfactant; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

Abstract

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alginate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

Abstract

A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• H01L 21/3105 - After-treatment

Abstract

The invention provides a polishing pad suitable for polishing integrated circuit wafers. A polyurethane polishing layer has a top surface and at least one groove in the polyurethane polishing layer. At least one copolymer wear detector located within the polyurethane polishing layer detects wear of the polishing layer adjacent the at least one groove. The at least one wear detector includes two regions, a first region being a fluorescent acrylate/urethane copolymer linked with a UV curable linking group and a second non-fluorescent region, The wear detector allows detecting wear of the polishing layer.

IPC Classes  ?

• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• B24B 37/16 - Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
• B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
• B24D 3/00 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents
• B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials
• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

The present invention provides chemical mechanical (CMP) polishing pads for polishing a substrate chosen from a semiconductor substrate comprising the CMP polishing pad and having one or more endpoint detection windows which is the cured product of a reaction mixture of a linear cycloaliphatic urethane macromonomer having two (meth)acrylate endgroups bound via cycloaliphatic dicarbamate esters to a polyether, polycarbonate or polyester chain having an average molecular weight of from 450 to 2,000, or an cycloaliphatic urethane oligomer thereof, and an aliphatic initiator, wherein the total isocyanate content in the urethane macromonomer ranges from 3.3 to 10 wt. %, and, further wherein, the composition comprises less than 5 wt. % of unreacted (meth)acrylate monomer and is substantially free of unreacted isocyanate. Regardless of their hardness or lack thereof, the endpoint detection windows provide excellent durability when wet.

IPC Classes  ?

• C09K 3/14 - Anti-slip materialsAbrasives
• C09G 1/16 - Other polishing compositions based on non-waxy substances on natural or synthetic resins
• C08L 75/16 - Polyurethanes having carbon-to-carbon unsaturated bonds having terminal carbon-to-carbon unsaturated bonds
• C08G 81/02 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
• C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
• C08F 220/06 - Acrylic acidMethacrylic acidMetal salts or ammonium salts thereof
• C08F 2/48 - Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
• B24D 3/00 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents
• B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials
• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
• H01L 21/321 - After-treatment

Abstract

The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions comprising one or more dispersions of colloidal silica particles having a zeta potential of from +5 to +50 mV and having one or more aminosilane group, preferably, elongated, bent or nodular colloidal silica particles, or, more preferably, such particles which contain a cationic nitrogen atom, and at least one amine heterocycle carboxylic acid having an isolectric point (pI) of from 2.5 to 5, preferably, from 3 to 4. The compositions have a pH of from 2.5 to 5.3. Preferably, the amine heterocycle carboxylic acid is an amine-containing heterocyclic monocarboxylic acid, such as nicotinic acid, picolinic acid, or isonicotinic acid. The compositions enable enhanced oxide:nitride removal rate ratios.

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/762 - Dielectric regions
• H01L 21/3105 - After-treatment
• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

A process for chemical mechanical polishing a substrate containing titanium nitride and titanium is provided comprising: providing a polishing composition, containing, as initial components: water; an oxidizing agent; a linear polyalkylenimine polymer; a colloidal silica abrasive with a positive surface charge; a carboxylic acid; a source of ferric ions; and, optionally pH adjusting agent; wherein the polishing composition has a pH of 1 to 4; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein at least some of the titanium nitride and at least some of the titanium is polished away with a selectivity between titanium nitride and titanium.

IPC Classes  ?

• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4′-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4′-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G′) at 65° C. of from 125 to 500 MPa, and a damping component (G″/G′ measured by shear dynamic mechanical analysis (DMA), ASTM D5279-08 (2008)) at 50° C. of from 0.06 to 0.13.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure

Abstract

The present invention provides methods of manufacturing a chemical mechanical polishing (CMP polishing) layer for polishing substrates, such as semiconductor wafers comprising providing a composition of a plurality of liquid-filled microelements having a polymeric shell; classifying the composition via centrifugal air classification to remove fines and coarse particles and to produce liquid-filled microelements having a density of 800 to 1500 g/liter; and, forming the CMP polishing layer by (i) converting the classified liquid-filled microelements into gas-filled microelements by heating them, then mixing them with a liquid polymer matrix forming material and casting or molding the resulting mixture to form a polymeric pad matrix, or (ii) combining the classified liquid-filled microelements directly with the liquid polymer matrix forming material, and casting or molding.

IPC Classes  ?

• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
• B24D 3/28 - Resins
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Abstract

The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average to molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine or bismuth neodecanoate, all weight percent's based on the total solids weight of the reaction mixture.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/20 - Lapping pads for working plane surfaces
• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• B24B 37/013 - Devices or means for detecting lapping completion

Abstract

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a thiolalkoxy compound; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• C23F 3/06 - Heavy metals with acidic solutions
• H01L 21/321 - After-treatment
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• C23F 11/04 - Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in markedly acid liquids

Abstract

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a polyglycol or polyglycol derivative; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

IPC Classes  ?

• H01L 21/321 - After-treatment
• C23F 3/06 - Heavy metals with acidic solutions
• H01L 21/3105 - After-treatment
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents

Abstract

18 alkyl or alkenyl group surfactant, and a pH adjusting agent.

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
• H01L 21/311 - Etching the insulating layers
• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• G03F 7/16 - Coating processesApparatus therefor
• G03F 7/38 - Treatment before imagewise removal, e.g. prebaking
• G03F 7/20 - ExposureApparatus therefor
• G03F 7/26 - Processing photosensitive materialsApparatus therefor

Abstract

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a dihydroxy bis-sulfide; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

IPC Classes  ?

• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
• H01L 21/461 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
• H01L 21/321 - After-treatment
• C23F 3/06 - Heavy metals with acidic solutions
• H01L 21/3105 - After-treatment
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents

Abstract

A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.

IPC Classes  ?

• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

A process for chemical-mechanical polishing a substrate containing tungsten includes the steps of providing a substrate; providing a polishing composition which contains: water, an oxidizing agent, xanthan gum, a dicarboxylic acid, a source of iron ions, a colloidal silica abrasive and optionally a pH adjusting agent, optionally a surfactant; providing a chemical mechanical polishing pad which has a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate to remove at least some of the tungsten. The process can reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics.

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

A process for chemical-mechanical polishing a substrate containing tungsten includes the steps of providing a substrate; providing a polishing composition which contains: water, an oxidizing agent, guar gum, a dicarboxylic acid, a source of iron ions, a colloidal silica abrasive and optionally a pH adjusting agent; providing a chemical mechanical polishing pad which has a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate to remove at least some of the tungsten. The process can reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics.

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

A process for chemical mechanical polishing a substrate containing tungsten includes the steps of providing a substrate; providing a polishing composition which contains: water, an oxidizing agent, alginate, a dicarboxylic acid, a source of iron ions, a colloidal silica abrasive and optionally a pH adjusting agent; providing a chemical mechanical polishing pad which has a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate to remove at least some of the tungsten. The process can reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics.

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

3.

IPC Classes  ?

• C09K 3/14 - Anti-slip materialsAbrasives
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• C08G 18/32 - Polyhydroxy compoundsPolyaminesHydroxy amines
• C08G 18/48 - Polyethers
• C08G 18/80 - Masked polyisocyanates
• C08G 18/76 - Polyisocyanates or polyisothiocyanates cyclic aromatic
• C08G 18/10 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
• B24D 3/00 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents
• B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials
• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for

Abstract

A process for chemical mechanical polishing a substrate containing tungsten and titanium is provided comprising: providing the substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; an allylamine additive; a carboxylic acid; a source of iron ions; a colloidal silica abrasive with a positive surface charge; and, optionally pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein the tungsten (W) is selectively polished away from the substrate relative to the titanium (Ti).

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• C09G 1/04 - Aqueous dispersions
• C09G 1/00 - Polishing compositions
• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

A method of polishing a substrate comprises the steps of: providing the substrate which contains titanium nitride and titanium; providing a chemical mechanical polishing composition which contains: water, an oxidizing agent, a linear polyalkylenimine polymer, a colloidal silica abrasive with a positive surface charge, a carboxylic acid, a source of ferric ions and an optional pH adjusting agent; providing a chemical mechanical polishing pad with a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; and polishing away at least some of the titanium nitride and at least some of the titanium. This polishing method has a high removal rate of titanium and titanium nitride.

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents

Abstract

A process for chemical mechanical polishing a substrate containing tungsten and titanium is provided comprising : providing the substrate; providing a polishing composition, containing, as initial components : water; an oxidizing agent; a chitosan; a dicarboxylic acid, wherein the dicarboxylic acid is selected from the group consisting of propanedioic acid and 2-hydroxypropanedioic acid; a source of iron ions; a colloidal silica abrasive with a positive surface charge; and, optionally pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) and some of the titanium (Ti) is polished away from the substrate with a removal selectivity for the tungsten (W) relative to the titanium (Ti).

IPC Classes  ?

• C09G 1/04 - Aqueous dispersions
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

A process for chemical mechanical polishing of a substrate is provided, comprising: providing the substrate, wherein the substrate has an exposed silicon dioxide; providing a chemical mechanical polishing composition, consisting of, as initial components: water, a colloidal silica abrasive; optionally, a substance according to formula (I); a substance according to formula (II); and, optionally, a pH adjusting agent; wherein a pH of the chemical mechanical polishing composition is ≦6; providing a chemical mechanical polishing pad with a polishing surface; dispensing the chemical mechanical polishing composition onto the polishing surface in proximity to an interface between the chemical mechanical polishing pad and the substrate; and, creating dynamic contact at the interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; wherein the substrate is polished; wherein some of the exposed silicon dioxide is removed from the substrate.

IPC Classes  ?

• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• B24B 37/20 - Lapping pads for working plane surfaces
• H01L 21/3105 - After-treatment

Abstract

A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ≧10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• H01L 21/3105 - After-treatment
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
• B24B 53/017 - Devices or means for dressing, cleaning or otherwise conditioning lapping tools
• H01L 21/321 - After-treatment
• C08G 18/16 - Catalysts
• C08G 18/10 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• C08G 18/70 - Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for

Abstract

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

IPC Classes  ?

• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
• B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
• B24B 53/017 - Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Abstract

A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ≧10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 53/017 - Devices or means for dressing, cleaning or otherwise conditioning lapping tools
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• G02B 1/12 - Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
• H01F 41/00 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
• B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials
• C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof
• C08G 18/00 - Polymeric products of isocyanates or isothiocyanates

Abstract

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

IPC Classes  ?

• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• C08G 18/00 - Polymeric products of isocyanates or isothiocyanates

Abstract

A circular polishing pad of the present invention is a circular polishing pad including a circular polishing layer. The circular polishing pad is characterized in that: the circular polishing layer has concentric grooves and one cross-shaped groove; and the cross-shaped groove has grooves substantially orthogonal to each other at the center of the circular polishing layer. With this circular polishing pad, generation of particles and scratches can be suppressed, while suppressing deterioration of polishing rate, and polishing failure can be reduced.

IPC Classes  ?

• B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The objective of the present invention is to provide a method of stably producing, in large volume, a light transmitting region that has a desired light transmissivity in a desired wavelength. This manufacturing method of a light transmitting region formed of a thermosetting polyurethane resin includes: a step for obtaining, beforehand, a correlation between a molding temperature when the light transmitting region is created by a sheet molding technique and the light transmissivity of the obtained light transmitting region in a specific wavelength; and a step for adjusting the molding temperature when the light transmitting region is created by the sheet molding technique on the basis of the obtained correlation to adjust the light transmissivity of the light transmitting region in the specific wavelength to the desired light transmissivity.

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The objective of the present invention is to provide a polishing pad which is easy to produce and with which, when mounting the polishing pad to a polishing plate, a release film on an adhesive layer surface provided on the polishing pad can easily be released. This polishing pad is characterized by having at least a polishing layer, an adhesive layer for affixation to a polishing plate, and a release film provided on the adhesive layer surface, wherein a tag member is provided between the adhesive layer and the release film such that one end of said tag member is exposed.

IPC Classes  ?

• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• C08G 18/00 - Polymeric products of isocyanates or isothiocyanates
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• C08G 101/00 - Manufacture of cellular products

Abstract

　This abrasive pad is provided with an abrasive layer having an abrasive area and a light-transmissive area, wherein the light-transmissive area has a curved surface of convex shape towards the surface side of the abrasive area, the apical portion of the curved surface of the light-transmissive area being positioned coplanar to the surface of the abrasive area or above the surface of the abrasive area. According to this abrasive pad, there can be provided an abrasive pad which resists peeling during use, and with which it is possible to minimize endpoint detection error associated with a decline in the light transmission rate from the initial period of use until the final phase.

IPC Classes  ?

• B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
• B24B 37/013 - Devices or means for detecting lapping completion
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The purpose of the present invention is to provide a grinding pad that, although being structured such that the back surface of a window is adhered to an adhesive member, is capable of performing high-accuracy optical final point sensing. The grinding pad comprises a grinding layer including a grinding region and a light transmitting region, and a support layer including an opening portion, the layers being laminated via an adhesive member with the light transmitting region and the opening portion overlapping each other, and is characterized in that the back surface of the adhesive member in the opening portion has an arithmetic mean roughness Ra of not more than 1 μm.

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• B24B 37/013 - Devices or means for detecting lapping completion
• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure

Abstract

The purpose of the present invention is to provide a layered polishing pad capable of, in spite of a structure such that a back surface of a window (light-transmitting region) is adhered to double-side tape, performing accurate optical end point detection and such that the window is not readily peeled from the double-side tape, and a manufacturing method therefor. A method for manufacturing the layered polishing pad according to the present invention comprises: a step of fabricating an adhesive layered sheet by passing an un-adhered layered sheet comprising a polishing layer having a light-transmitting region in an opening portion A of a polishing region and a double-side tape having a hot melt adhesive layer on one side of a base material and a pressure-sensitive adhesive layer and mold-release sheet on the other side, the polishing layer and the double-side tape being layered such that the back surface of the polishing layer and the hot melt adhesive layer contact each other, between a pair of rolls of which the double-side tape side roll is a hot roll, thereby adhesively affixing the polishing region and the light-transmitting region to the hot melt adhesive layer of the double-side tape; and a step of peeling the mold-release sheet from the adhesive layered sheet and attaching a support layer having an opening portion B at a portion corresponding to the light-transmitting region to the exposed pressure-sensitive adhesive layer. A surface of the mold-release sheet that contacts the pressure-sensitive adhesive layer has an arithmetic mean roughness Ra of not more than 1 μm.

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• B24B 37/013 - Devices or means for detecting lapping completion
• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure

Abstract

The purpose of the present invention is to provide: a polishing pad having a high polishing rate and excellent planarizing properties; and a method for producing the polishing pad. A polishing pad which has a polishing layer comprising a polyurethane resin foam, said polishing pad being characterized in that a polyurethane resin, which is a material used for forming the polyurethane resin foam, has an alkoxysilyl group represented by general formula (1) in a side chain thereof. (In the formula, X represents OR1 or OH; and R1's independently represent an alkyl group having 1 to 4 carbon atoms.)

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• C08G 18/10 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• C08G 101/00 - Manufacture of cellular products

Abstract

The purpose of the present invention is to provide: a polishing pad having a high polishing rate and excellent planarizing properties; and a method for producing the polishing pad. A polishing pad having, formed therein, a polishing layer comprising a polyurethane resin foam, said polishing pad being characterized in that a polyurethane resin, which is a material used for forming the polyurethane resin foam, has an alkoxysilyl group introduced into a side chain thereof, wherein the introduction of the alkoxysilyl group is achieved by the reaction of a urethane or urea group in an isocyanate-terminal prepolymer with an isocyanate group in an alkoxysilyl-group-containing isocyanate represented by general formula (1). (In the formula, X represents OR1 or OH; R1's independently represent an alkyl group having 1 to 4 carbon atoms; and R2 represents an alkylene group having 1 to 6 carbon atoms.)

IPC Classes  ?

• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
• C08G 18/10 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
• C08G 18/83 - Chemically modified polymers
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• C08G 101/00 - Manufacture of cellular products

Abstract

A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

IPC Classes  ?

• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/3105 - After-treatment
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A low defect chemical mechanical polishing composition for polishing silicon oxide containing substrates is provided comprising, as initial components: water, a colloidal silica abrasive; and, an additive according to formula I.

IPC Classes  ?

• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

A method for producing a laminated polishing pad, which is free from warpage and does not cause peeling between a polishing layer and a cushion layer during polishing, includes the steps of: laminating a hot-melt adhesive sheet to a surface of a cushion layer with a base material in which a thermoplastic resin base material is provided peelably on one surface of the cushion layer, on which the thermoplastic resin base material is not provided; heating the laminated hot-melt adhesive sheet to be melted or softened; laminating a polishing layer on the melted or softened hot-melt adhesive to prepare a laminate; cutting the laminate to the size of the polishing layer to prepare a laminated polishing sheet; and peeling the thermoplastic resin base material from the laminated polishing sheet.

IPC Classes  ?

• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Abstract

A stable, concentratable silicon wafer polishing composition for polishing silicon wafers is provided, containing: water; an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, optionally, a pH adjusting agent; wherein the polishing composition exhibits a silicon removal rate of at least 300 nm/min. Also provided are methods of making and using the stabilized, concentratable chemical mechanical polishing composition.

IPC Classes  ?

• C09K 13/00 - Etching, surface-brightening or pickling compositions
• C09G 1/02 - Polishing compositions containing abrasives or grinding agents
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, optionally, a pH adjusting agent; wherein the polishing composition exhibits a silicon removal rate of at least 300 nm/min. Also provided are methods of making and using the chemical mechanical polishing composition.

IPC Classes  ?

• C09K 13/00 - Etching, surface-brightening or pickling compositions
• C09G 1/04 - Aqueous dispersions
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

An object of the invention is to provide a polishing pad that is prevented from slurry leaks and has high optical detection accuracy. The present invention relates to a polishing pad comprising a polishing region, a cushion layer, and a support film layered in this order, wherein a light-transmitting region is provided on the support film and in an opening part that passes through the polishing region and the cushion layer; the light-transmitting region has a peripheral part and a recessed part on the surface of a polishing platen-side; the support film is layered on the peripheral part; and the support film is not layered on the recessed part, which remains open.

IPC Classes  ?

• B24B 49/12 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
• B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
• B24B 37/20 - Lapping pads for working plane surfaces
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon dioxide is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon dioxide removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon dioxide removal rate selectivity.

IPC Classes  ?

• B44C 1/22 - Removing surface-material, e.g. by engraving, by etching
• C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
• C03C 25/68 - Chemical treatment, e.g. leaching, acid or alkali treatment by etching
• C23F 1/00 - Etching metallic material by chemical means

Abstract

A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon nitride removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon nitride removal rate selectivity.

IPC Classes  ?

• B44C 1/22 - Removing surface-material, e.g. by engraving, by etching
• C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
• C03C 25/68 - Chemical treatment, e.g. leaching, acid or alkali treatment by etching
• C23F 1/00 - Etching metallic material by chemical means

Abstract

A chemical mechanical polishing pad comprising an acrylate polyurethane polishing layer, wherein the polishing layer exhibits a tensile modulus of 65 to 500 MPa; an elongation to break of 50 to 250%; a storage modulus, G′, of 25 to 200 MPa; a Shore D hardness of 25 to 75; and a wet cut rate of 1 to 10 μm/min.

IPC Classes  ?

• B24D 3/28 - Resins
• B24D 15/00 - Hand tools or other devices for non-rotary grinding, polishing, or stropping
• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
• C08G 18/67 - Unsaturated compounds having active hydrogen
• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

An object of the present invention is to provide a polishing pad having high planarization property and capable of making it possible to suppress the occurrence of scratches. A polishing pad of the present invention has a polishing layer having oval cells each with a long axis inclined by 5° to 45° with respect to the direction of the thickness of the polishing layer.

IPC Classes  ?

• B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Abstract

The present invention provides a polishing pad used for planarizing inter layer dielectrics and the like by CMP (chemical mechanical polishing) in the manufacturing process of a semiconductor device, a method of producing the polishing pad and a method of producing a semiconductor device by using the polishing pad. The present invention relates to a semiconductor wafer polishing pad having grooves in a polishing surface and formed from a foamed polyurethane, wherein a processed surface of the groove comprising a side surface and a bottom surface has a surface roughness Ra of not more than 10.

IPC Classes  ?

• B24B 49/00 - Measuring or gauging equipment for controlling the feed movement of the grinding tool or workArrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation

Abstract

A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): 6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).

IPC Classes  ?

• B24D 3/02 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
• C09C 1/68 - Loose abrasive particles
• C09K 3/14 - Anti-slip materialsAbrasives

Abstract

A chemical mechanical polishing composition is provided, comprising, as initial components: water, an abrasive; a diquaternary substance according to formula (I); a derivative of guanidine according to formula (II); and, optionally, a quaternary ammonium salt. Also, provided is a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing the chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6.

IPC Classes  ?

• C09K 13/00 - Etching, surface-brightening or pickling compositions
• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting

Abstract

A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 40 wt % abrasive having an average particle size of 5 to 150 nm; 0.001 to 1 wt % of an adamantyl substance according to formula (II); 0 to 1 wt % diquaternary substance according to formula (I); and, 0 to 1 wt % of a quaternary ammonium compound. Also, provided is a method for chemical mechanical polishing using the chemical mechanical polishing composition.

IPC Classes  ?

• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
• H01L 21/461 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an acyclic organosulfonic acid compound, wherein the acyclic organosulfonic acid compound has an acyclic hydrophobic portion having 6 to 30 carbon atoms and a nonionic acyclic hydrophilic portion having 10 to 300 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.

IPC Classes  ?

• C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
• C03C 25/68 - Chemical treatment, e.g. leaching, acid or alkali treatment by etching
• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
• H01L 21/461 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

A polishing pad capable of maintaining a high level of dimensional stability during absorption of moisture or water includes a polishing layer including a polyurethane foam having fine cells, wherein the polyurethane foam includes a cured product of a reaction of an isocyanate-terminated prepolymer (A), a polymerized diisocyanate, and a chain extender, and the isocyanate-terminated prepolymer (A) includes an isocyanate monomer, a high molecular weight polyol (a), and a low molecular weight polyol. A method for manufacturing such a polishing pad includes mixing a first component containing an isocyanate-terminated prepolymer with a second component containing a chain extender and curing the mixture to form a polyurethane foam. The pad so made is used in the manufacture of semiconductor devices.

IPC Classes  ?

• C08G 18/00 - Polymeric products of isocyanates or isothiocyanates
• B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
• B24D 3/26 - Rubbers for porous or cellular structure
• C08G 18/10 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
• C08G 18/48 - Polyethers
• C08G 18/66 - Compounds of groups , , or
• C08G 18/72 - Polyisocyanates or polyisothiocyanates

Abstract

Shape memory chemical mechanical polishing methods are provided that use shape memory chemical mechanical polishing pads having a polishing layer in a densified state, wherein the polishing pad thickness and/or groove depth is monitored and the polishing layer is selectively exposed to an activating stimulus causing a transition from the densified state to a recovered state.

IPC Classes  ?

• B24B 51/00 - Arrangements for automatic control of a series of individual steps in grinding a workpiece

Abstract

It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).

IPC Classes  ?

• B24B 1/00 - Processes of grinding or polishingUse of auxiliary equipment in connection with such processes
• B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials

Abstract

A polishing pad has an excellent polishing rate and is superior in longevity without generating center slow. A method of manufacturing a semiconductor device with the polishing pad is also provided. The polishing pad has a polishing layer consisting of a polyurethane foam having fine cells, wherein a high-molecular-weight polyol component that is a starting component of the polyurethane foam contains a hydrophobic high-molecular-weight polyol A having a number-average molecular weight of 550 to 800 and a hydrophobic high-molecular-weight polyol B having a number-average molecular weight of 950 to 1300 in an A/B ratio of from 10/90 to 50/50 by weight.

IPC Classes  ?

• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
• H01L 21/461 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
• B32B 5/00 - Layered products characterised by the non-homogeneity or physical structure of a layer
• B32B 3/26 - Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layerLayered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form characterised by a layer with cavities or internal voids

Abstract

The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnected unit cells (225). The interconnected unit cells (225) are reticulated for allowing fluid flow and removal of polishing debris. A plurality of polishing elements (208, 308 and 408) form the three-dimensional network of interconnected unit cells (225). The polishing elements (208, 308 and 408) have a first end connected to a first adjacent polishing element at a first junction (209, 309 and 409) and a second end connected to a second adjacent polishing element at a second junction (209, 309 and 409) and having a cross-sectional area (222, 322 and 422) that remains within 30% between the first and the second junctions (209, 309 and 409). The polishing surface (200, 300 and 400) formed from the plurality of polishing elements (208, 308 and 408) remains consistent for multiple polishing operations.

IPC Classes  ?

• B24B 1/00 - Processes of grinding or polishingUse of auxiliary equipment in connection with such processes

Abstract

Disclosed is a method for production of a laminate polishing pad which comprises a reduced number of steps and is excellent in productivity rate, and which causes no detachment between a polishing layer and a cushion layer and can prevent the groove clogging caused by a slurry or the like. Also disclosed is a laminate polishing pad produced by the method. A method for production of a laminate polishing pad, comprising the steps of: preparing a cell-dispersed urethane composition by a mechanical frothing process; ejecting the cell-dispersed urethane composition onto a cushion layer continuously while feeding the cushion layer; curing the cell-dispersed urethane composition while controlling the thickness of the composition evenly to form a polishing layer made of a polyurethane foam, thereby producing a long laminate sheet; and cutting the long laminate sheet.

IPC Classes  ?

• B24B 37/20 - Lapping pads for working plane surfaces
• B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
• B29C 44/32 - Incorporating or moulding on preformed parts, e.g. linings, inserts or reinforcements
• C08G 18/12 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step using two or more compounds having active hydrogen in the first polymerisation step
• C08G 18/48 - Polyethers
• C08G 18/72 - Polyisocyanates or polyisothiocyanates
• C08G 18/75 - Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic
• C08G 18/76 - Polyisocyanates or polyisothiocyanates cyclic aromatic
• C08G 101/00 - Manufacture of cellular products

Abstract

A method for manufacturing a polishing pad made from a polyurethane resin foam having very uniform, fine cells therein and a polishing pad obtained by that method provides a polishing pad having better polishing characteristics (especially, in planarization) while providing improved dressability while maintaining the planarization characteristics and polishing speed of a conventional polishing pad. The polyurethane resin foam is a cured product obtained by reacting an isocyanate-terminated prepolymer with an aromatic polyamine chain extender having a melting point of 70° C. or lower, for example.

IPC Classes  ?

• C08G 18/10 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step

Abstract

The present invention provides a chemical mechanical polishing pad comprising, a polymeric matrix having microspheres dispersed therein, the polymeric matrix being formed of a water-based polymer or blends thereof, and wherein the polymeric matrix is applied on a permeable substrate. The present invention provides a water-based polishing pad with reduced defectivity and improved polishing performance.

IPC Classes  ?

• B24D 11/00 - Constructional features of flexible abrasive materialsSpecial features in the manufacture of such materials

Abstract

The present invention provides a method of forming a chemical mechanical polishing pad comprising, providing a tank with polymeric materials, providing a storage silo with microspheres and providing an isocyanate storage tank with isocyanates. The invention further provides delivering the polymeric materials and the microspheres to a premix prep tank, forming a pre-mixture of the polymeric materials and the microspheres, delivering the pre-mixture to a premix run tank and forming a mixture of the pre-mixture and the isocyanates. Further the invention provides injecting the mixture into a closed mold, curing the polishing pad in the mold and degassing at least one of the tank, isocyanate storage tank and the mold.

IPC Classes  ?

• B29C 44/06 - Making multilayered articles

Abstract

The present invention provides an apparatus 20 for forming a striation-reduced chemical mechanical polishing pad 4. The polishing pad 4 comprises a first delivery line 66 for delivering a polymeric material 52 into a mixer 68 and a second delivery line 44 for delivering microspheres 48 into the mixer 68 with the polymeric material 52. The second delivery line 44 is connected to a bulk density control unit 21. The bulk density control unit 21 comprises a storage hopper 22 for storing the microspheres 48. The storage hopper 22 further comprises a porous membrane 24 provided over a plenum 26. A fluidizing gas source 23 is connected to the plenum 26 through a gas inlet line 27. Gas 28 fed into the plenum 26 from the fluidizing gas source 23 permeates through the porous membrane 24 and reduces the initial bulk density of the microspheres 48 in the storage hopper 22.

IPC Classes  ?

• B01F 13/02 - Mixers with gas agitation, e.g. with air supply tubes