An apparatus that forms liquid silicon includes a. a device by which a gas can be brought to a high-temperature state in which it is at least partially present as plasma, b. a reaction space and a feed conduit for the high-temperature gas opening into the reaction space, c. a nozzle having a nozzle channel that opens directly into the reaction space and through which a gaseous or particulate silicon-containing starting material can be fed into the reaction space, and d. a device adapted to introduce an inert gas into the reaction space such that it protects the exit opening of the nozzle channel against thermal stress resulting from the high-temperature gas.
A process of producing silicon-containing materials includes converting a gas to a superheated state in which it is at least partly in plasma form, and contacting the superheated gas with a silicon-containing first starting material to form a mixture including the gas and silicon, wherein the silicon-containing materials are produced by adding to the gas or the mixture a second starting material that can enter into a chemical reaction directly with the silicon in the mixture, or breaks down thermally on contact with the superheated gas and/or the mixture, and steps a. and b. are effected spatially separately from one another.
In order to produce silicon-containing materials, a gas is converted into a superheated state in which it is present, at least partially, as plasma. The superheated gas is contacted with a silicon-containing first starting material, forming a mixture comprising the gas and silicon. A second starting material, which can chemically react directly with the silicon in the mixture or which thermally decomposes on contact with the superheated gas and/or the mixture, is added to the gas or the mixture. The conversion of the gas into the superheated state and the contacting of the superheated gas with the silicon-containing first starting material are spatially separate from one another. An apparatus (100) suitable for carrying out this process comprises a device (106, 107) for heating the gas, a reaction chamber (101), a first feed line (105) for the superheated gas which opens into the reaction chamber, and a second feed line (108) which opens directly into the reaction chamber (101) and through which the first starting material can be fed into the reaction chamber (101). A third feed line (112) serves for feeding the second starting material into the apparatus (100).
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
In order to produce silicon-containing materials, a gas is converted into a superheated state in which it is present, at least partially, as plasma. The superheated gas is contacted with a silicon-containing first starting material, forming a mixture comprising the gas and silicon. A second starting material, which can chemically react directly with the silicon in the mixture or which thermally decomposes on contact with the superheated gas and/or the mixture, is added to the gas or the mixture. The conversion of the gas into the superheated state and the contacting of the superheated gas with the silicon-containing first starting material are spatially separate from one another. An apparatus (100) suitable for carrying out this process comprises a device (106, 107) for heating the gas, a reaction chamber (101), a first feed line (105) for the superheated gas which opens into the reaction chamber, and a second feed line (108) which opens directly into the reaction chamber (101) and through which the first starting material can be fed into the reaction chamber (101). A third feed line (112) serves for feeding the second starting material into the apparatus (100).
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
5.
METHOD AND APPARATUS FOR PRODUCING SILICON-CONTAINING MATERIALS
In order to produce silicon-containing materials, a gas is converted into a superheated state in which it is present, at least partially, as plasma. The superheated gas is contacted with a silicon- containing first starting material, forming a mixture comprising the gas and Silicon. A second starting material, which can chemically react directly with the Silicon in the mixture or which thermally decomposes on contact with the superheated gas and/or the mixture, is added to the gas or the mixture. The conversion of the gas into the superheated state and the contacting of the superheated gas with the silicon-containing first starting material are spatially separate from one another. An apparatus suitable for carrying out this process comprises a device for heating the gas, a reaction chamber, a first feed line for the superheated gas which opens into the reaction chamber, and a second feed line which opens directly into the reaction chamber and through which the first starting material can be fed into the reaction chamber. A third feed line serves for feeding the second starting material into the apparatus.
H01L 21/64 - Manufacture or treatment of solid-state devices other than semiconductor devices, or of parts thereof, not specially adapted for a single type of device provided for in subclasses , , or
C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
An apparatus for forming liquid silicon comprises a device for bringing a gas into a high-temperature state in which it is at least partially present as plasma. The high temperature gas is conducted into a reaction space where it is contacted with a gaseous or particulate silicon- containing starting material. The silicon-containing starting material is introduced into the reaction space via a nozzle having a nozzle channel which opens directly into the reaction space. At the same time an inert gas is introduced into the reaction space in such a way that it protects the exit opening of the nozzle channel against thermal stress resulting from the high-temperature gas.
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
B01J 19/24 - Stationary reactors without moving elements inside
B01J 19/26 - Nozzle-type reactors, i.e. the distribution of the initial reactants within the reactor is effected by their introduction or injection through nozzles
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
An apparatus for forming liquid silicon comprises a device for bringing a gas into a high- temperature state in which it is at least partially present as plasma. The high temperature gas is conducted into a reaction space where it is contacted with a gaseous or particulate silicon- containing starting material. The silicon-containing starting material is introduced into the reaction space via a nozzle having a nozzle channel which opens directly into the reaction space. At the same time an inert gas is introduced into the reaction space in such a way that it protects the exit opening of the nozzle channel against thermal stress resulting from the high- temperature gas.
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
The invention relates to a device for forming liquid silicon, comprising a unit for transferring a gas into a high-heat-treated state, in which it is at least partially in the form of plasma. The high-heat-treated gas is directed into a reaction chamber (100), where it is brought into contact with a gaseous or particulate silicon-containing starting material. The silicon-containing starting material is introduced into the reaction chamber (100) via a nozzle (102) with a nozzle channel (103) feeding directly into said reaction chamber (100). At the same time, an inert gas is introduced into the reaction chamber (100) in such a way that it protects the mouth opening (103a) of the nozzle channel (103) from thermal stress coming from the high-heat-treated gas.
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
A method that decomposes monosilane wherein a monosilane-containing gas stream is circulated in a circuit system including a reactor that decomposes the monosilane, the method including injecting a monosilane-containing gas stream into the reactor, bringing the gas stream into contact with a heated surface inside the reactor at which surface a portion of the monosilane in the gas stream is decomposed to deposit a solid silicon layer on the surface so that the concentration of the monosilane in the gas stream decreases, discharging the gas stream from the reactor, reprocessing the gas stream including at least partially compensating the decrease in the monosilane concentration resulting from the decomposition by addition of monosilane, and reinjecting the reprocessed, monosilane-containing gas stream into the reactor, wherein during deposition an operating pressure of 2.5 to 10 bar is established and the gas stream enters the reactor at a velocity of less than 7.5 m/s.
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
10.
Column and process for disproportionation of chlorosilanes into monosilane and tetrachlorosilane and plant for production of monosilane
A column includes a column head, a column sump and a tube-shaped column shell disposed therebetween, two or more reaction zones lying above each other which each accommodate a catalyst bed, in which catalyst beds chlorosilanes disproportionate into low-boiling silanes, which form an ascending stream of gas, and also into high-boiling silanes which form a downwardly directed stream of liquid, within the column shell and along the column axis, two or more rectificative separation zones, the reaction zones and the separation zones alternate along the column axis, the separation zones are configured such that the stream of gas and the stream of liquid meet in the separation zones, and the reaction zones are configured such that the downwardly directed stream of liquid is led through the catalyst beds, whereas the upwardly directed stream of gas passes the catalyst beds in spatial separation from the stream of liquid.
B01J 19/24 - Stationary reactors without moving elements inside
C01B 3/22 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of gaseous or liquid organic compounds
C07C 253/00 - Preparation of carboxylic acid nitriles
B01J 8/04 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds the fluid passing successively through two or more beds
B01D 3/00 - Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
B01D 3/20 - Bubble capsRisers for vapourDischarge pipes for liquid
B01J 8/06 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds in tube reactorsChemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds the solid particles being arranged in tubes
A process is described for decomposing monosilane, where a monosilane-containing gas stream is circulated in a circuit system which comprises a reactor for decomposing the monosilane present in the gas stream. The process feeds the gas stream into the reactor and brings it into contact with a surface heated to high temperature within the reactor. At the surface, some of the monosilane present in the gas stream is decomposed with deposition of a solid silicon layer, and the concentration of the monosilane in the gas stream thus decreases. The gas stream is passed out of the reactor and treated, monosilane being added here to the gas stream. The treated gas stream is then fed back into the reactor. During deposition an operating pressure in the range from 2.5 bar to 10 bar is established within the circuit system. The gas stream enters the reactor here with a velocity below 7.5 m/s. A system is moreover proposed which is suitable for carrying out the process.
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
12.
COLUMN AND PROCESS FOR DISPROPORTIONATION OF CHLOROSILANES INTO MONOSILANE AND TETRACHLOROSILANE AND ALSO PLANT FOR RECOVERY OF MONOSILANE
A column and a process are described for disproportionation of chlorosilanes into monosilane and tetrachlorosilane coupled with simultaneous rectificative separation of the silanes obtained. A plant comprising such a column is also described. The column comprises a column head, a column sump and a tube-shaped column shell disposed therebetween. The column comprises, within the column shell and along the column axis, two or more reaction zones lying above each other and two or more separation zones serving the purpose of rectificative separation in an alternating arrangement. The reaction zones each accommodate a catalyst bed, in which catalyst beds chlorosilanes disproportionate into low-boiling silanes, which form an ascending stream of gas within the column, and also into (comparatively) high-boiling silanes which (after condensation) form a downwardly directed stream of liquid within the column. The separation zones and the reaction zones are configured such that the stream of gas and the stream of liquid meet in the separation zones, whereas, in the reaction zones, the stream of liquid is led through the catalyst beds and the stream of gas passes the catalyst beds in spatial separation from the stream of liquid.
A reactor for producing silicon by means of thermal decomposition of a silicon-containing compound on silicon rods heated to a high temperature, which comprises a reactor bottom and an upper reactor part mounted thereon which together enclose an interior reactor space in which the thermal decomposition occurs, where the reactor bottom has holders in which the silicon rods are fixed, is described. The reactor is characterized in that the holders on the reactor bottom form a pattern made up of hexagons and/or in that the interior reactor space is divided by a cylindrical dividing wall into two subregions, a central, preferably cylindrical inner region in which the silicon rods are arranged and a preferably annular outer region radially enclosing the inner region, where the subregions are open at the top or connected to one another by openings in the dividing wall. Furthermore, a process for producing silicon which can be carried out in such a reactor is described.
B01J 19/24 - Stationary reactors without moving elements inside
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
3) includes a reaction column having a feed line for trichlorosilane and a discharge line for silicon tetrachloride (SiCl4) formed, and at least one condenser via which monosilane produced can be discharged from the reaction column, wherein the reaction column has at least two reactive/distillative reaction regions operated at different temperatures and containing different catalytically active solids, at least one of the reaction regions containing a catalytically active solid based on vinylpyridine, and at least one of the reaction regions containing a catalytically active solid based on styrene.
B01J 8/04 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds the fluid passing successively through two or more beds
B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes
B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
B01J 19/24 - Stationary reactors without moving elements inside
B01J 35/00 - Catalysts, in general, characterised by their form or physical properties
What is described is a plant for preparation of monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3) comprising a column-shaped reaction column (101) with an inlet (102) for trichlorosilane, an outlet (103) for silicon tetrachloride (SiCl4) obtained, and a heating region (104), preferably at the lower end of the column, and a condenser (105), by means of which the monosilane prepared can be removed from the column (101), said column (101) comprising a segment (106; 107; 108) in which a catalytically active solid is present, and wherein the column segment (106; 107; 108) comprises a tube or tube bundle composed of two or more tubes (109; 110; 111) filled with the catalytically active solid.
A process for preparing high-purity silicon by thermal decomposition of a silicon compound includes decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed.
A reactor that produces polycrystalline silicon using a monosilane process includes a reactor base plate having a multiplicity of nozzles formed therein through which a silicon-containing gas flows, a plurality of filament rods mounted on the reactor base plate, and a gas outlet opening located at a selected distance from the nozzles to feed used monosilane to an enrichment and/or treatment stage, wherein the gas outlet opening is formed at a free end of an inner tube, the inner tube is conducted through the reactor base plate, and the inner tube has an outer wall and an inner wall and thus forms an intermediate space in which at least one cooling water circuit is conducted.
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
F28D 7/00 - Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
B01J 15/00 - Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet materialApparatus specially adapted therefor
B01J 19/24 - Stationary reactors without moving elements inside
18.
PRODUCTION OF MONOCRYSTALLINE SEMICONDUCTOR MATERIALS
The invention relates to a method for producing a monocrystalline semiconductor material, in which a semiconductor material is provided as starting material, the starting material is transferred to a heating zone in which the starting material is fed to the melt made of the semiconductor material and the melt is lowered out of the heating zone and/or the heating zone is raised, so that at the lower end of the melt a solidification front is formed, along which the semiconductor material crystallises in the desired structure.The starting material is prepared from the semiconductor material in liquid form and is fed in the liquid state to the melt. The invention further relates to a system for producing a monocrystalline semiconductor material, comprising a source for a liquid semiconductor material serving as the starting material, heating means for producing and/or maintaining a melt made of the semiconductor material, and preferably also means for the controlled feeding of the liquid semiconductor material serving as the starting material to the melt.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
19.
PRODUCTION OF A CRYSTALLINE SEMICONDUCTOR MATERIAL
The invention relates to a method for producing a crystalline semiconductor material, wherein particles from the semiconductor material and/or a precursor compound of the semiconductor material are fed into a gas stream which has a sufficiently high temperature, in order to convert the particles of the semiconductor material from the solid into the liquid and/or gaseous state and/or in order to thermally decompose the precursor compound. In a further step, liquid semiconductor material is condensed and/or separated out of the gas stream and converted into a solid state to form monocrystalline or polycrystalline crystal structures.
The invention relates to a method for producing silicon, in particular high purity silicon, wherein (1) powder comprising silicon, in particular powder arising from wire cutting a silicon block, is provided, (2) the powder comprising silicon is fed into a gas flow, wherein the gas comprises a sufficiently high temperature for transitioning the silicon powder from the solid to the liquid and/or gaseous state, (3) silicon vapors are optionally condensed and liquid silicon is collected, and (4) collected liquid silicon is cooled, preferably in a casting mold.
A description is given of a system and a process for producing monosilane (SiH4) by catalytic disproportionation of trichlorosilane (SiHCl3). The trichlorosilane is reacted in a reaction column (100) in the presence of a catalyst and subsequently purified in a rectification column (109). Between a reactive/distillation reaction zone (104; 105) in the reaction column (100) and the rectification column (109), one or more condensers (103) are arranged in which monosilane-containing reaction product from the reaction column (100) is partly condensed. However, this concerns solely condensers which are operated at a temperature above ‑40°C.
A process is described for producing trichlorosilane, in which silicon particles are reacted with tetrachlorosilane and hydrogen and optionally with hydrogen chloride in a fluidized-bed reactor (101) to form a trichlorosilane-containing product gas stream, wherein the trichlorosilane-containing product gas stream is passed out of the reactor (101) via an outlet (117), upstream of which at least one particle separator (118) is connected, which particle separator selectively only allows silicon particles to pass up to a defined maximum size, and wherein in preferably regular time intervals, or continuously, via at least one further outlet (109; 112) silicon particles are ejected from the reactor (101) without such a particle separator. In addition, a system (100) is described which is suitable for carrying out such a process and which has a first (101) and a second (102) fluidized-bed reactor which are connected in such a manner that silicon ejected from the first reactor (101) can be transferred into the second reactor (102).
The invention relates to a system for producing monosilane, comprising a reaction column (100) having a feed pipe (101) for trichlorosilane and a discharge pipe (102) for silicon tetrachloride that develops, and at least one condenser (103), by way of which the produced monosilane can be removed from the reaction column, wherein the reaction column comprises at least two reactive/distillative reaction regions (104, 105), which are operated at different temperatures and contain different catalytically acting solids. Furthermore a method for producing monosilane by the catalytic disproportioning of trichlorosilane is described, wherein the disproportioning is carried out in at least two reactive/distillative reaction regions (104, 105) operated at different temperatures and containing different catalytically acting solids.
The invention relates to a method for purifying metallurgical silicon, wherein the metallurgical silicon is broken up in particular by means of an electrical high-voltage field, the silicon particles obtained in the process are subjected to a chemical treatment, the silicon particles are melted after the chemical treatment, and the obtained silicon melt is purified by directional solidification. The invention further relates to a system for performing such a method.
The invention relates to a reactor (10) for producing polycrystalline silicon, having a reactor floor (2) having a plurality of nozzles (4) formed therein. A siliceous gas flows in through the nozzles (4). A plurality of filament rods (6) are also mounted on the reactor floor (2). A gas outlet opening (8) for feeding used siliceous gas to an enrichment and/or conditioning is further provided. The gas outlet opening (8) is formed at a free end (21) of an inner tube (20), wherein the inner tube (20) is fed through the reactor floor (2).
C01B 33/035 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
26.
METHOD AND DEVICE FOR THE PRODUCTION OF HIGH-PURITY SILICON
A method is described for producing high-purity silicon by thermally decomposing a silicon compound which is mixed with a carrier gas for the decomposition process, said carrier gas having a temperature at which the silicon compound is thermally decomposed. A reactor and a system in which such a method can be carried out are also described.
C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
B01J 19/24 - Stationary reactors without moving elements inside
27.
METHOD AND SYSTEM FOR THE PRODUCTION OF PURE SILICON
The invention relates to a method for the production of ultrapure silicon, comprising the sections (1) of the production of trichlorosilane, (2) the production of monosilane by disproportioning the trichlorosilane produced in section (1), and (3) the thermal decomposition of the monosilane produced in this manner, wherein silicon is reacted with hydrogen chloride in section (1) in at least one hydrochlorinating process for the production of the trichlorosilane, and simultaneously therewith silicon tetrachloride forming as a by-product in a conversion process is reacted with silicon and hydrogen in section (2). Furthermore, a system therefor comprises a production unit (1) for the production of trichlorosilane, a further unit (2) for the production of monosilane, and a unit (3) for the thermal decomposition of the monosilane produced, a unit (1) having at least one hydrochlorinating reactor, at least one conversion rector, at least one collection container for reaction mixture containing trichlorosilane, and at least one separating device, a unit (2) having at least one disproportioning reactor and at least one separating device, and a unit (3) having at least one decomposition reactor for monosilane, wherein unit (2) is connected to unit (1) by way of at least one return line, by way of which the silicon tetrachloride forming in unit (2) can be fed into the at least one conversion reaction in unit (1).
C01B 33/029 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
patents
