A method of synchronous transmission for a serial communication system having a master device and a plurality of slave devices coupled in series, can include: in a synchronous control interval of a control period, controlling an output signal of a corresponding slave according to an input signal of the corresponding slave; in a data control interval of the control period, controlling the output signal of the corresponding slave according to a first signal, such that a period of the output signal is synchronized with a period of the input signal; and where a start moment of a first period of the first signal is delayed by a first duration compared to a start moment of a first period of the input signal.
A curved-gate transistor structure, wherein gate regions of the curved-gate transistor structure are curved, wherein the curved-gate transistor structure comprises semiconductor structural units, each semiconductor structural unit further comprises body contact regions, the body contact regions and source region are on the same side of the gate region, each semiconductor structural unit further comprises a curved gate region; the body contact regions are added near the source region, and contact regions of each of the semiconductor structural units structure can easily form a network to enhance latch-up resistance; each of the first metal blocks can be connected to a same or different potential, and the two branches of the gate regions of the same semiconductor structural unit can also be connected to a same or different potential.
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/085 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
3.
TRANSFORMER STRUCTURE, MANUFACTURING METHOD AND INTEGRATED CIRCUIT
A transformer structure can include: a substrate encapsulating at least two windings that are isolated from each other, where each winding includes a coil body and lead-out terminals coupled to the coil body; and a magnetic encapsulation body encapsulating at least one side of the substrate, where the magnetic encapsulation body includes an insulating main material and magnetic particles dispersed in the insulating main material.
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
4.
CONTROL CIRCUIT AND CONTROL METHOD OF MULTIPHASE POWER CONVERTER
A method of controlling a multiphase power converter comprising a plurality of power stage circuits coupled in parallel, can include: in a first operation mode, controlling an operating timing sequence of the plurality of power stage circuits according to a reference signal and a feedback signal representing an output voltage of the multiphase power converter; and in a second operation mode, controlling the operating timing sequence of the plurality of power stage circuits according to a fixed time and a minimum turn-off time, in order to ensure that the operating timing sequence of the plurality of power stage circuits remains unchanged in response to transition of a load of the multiphase power converter.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A high-voltage capacitor and a manufacturing method thereof. The high-voltage capacitor includes a first electrode part, at least one interlayer dielectric layer disposed on the first electrode part, a groove disposed in a top surface of the interlayer dielectric layer, where projection of the groove in a vertical direction overlaps with the first electrode part, and a second electrode part of the high-voltage capacitor disposed on the top surface of the interlayer dielectric layer. The second electrode overlaps with the groove and extends beyond the sides of the groove. By providing the filled groove, the thickness of the dielectric layer at the edge of the lower surface of the second electrode part is increased compared to the capacitor's middle part, thereby improving the withstand voltage of the high-voltage capacitor.
A high-voltage capacitor and a method for manufacturing the high-voltage capacitor are provided. The high-voltage capacitor comprises a first electrode portion, interlayer dielectric layers, a first voltage-resistant dielectric layer, a second electrode portion, and a second voltage-resistant dielectric layer. The interlayer dielectric layers are stacked on the first electrode portion. The first voltage-resistant dielectric layer is formed on an upper surface of a topmost interlayer dielectric layer among the interlayer dielectric layers. The second electrode portion is formed on the first voltage-resistant dielectric layer, and projections of the second electrode portion and the first electrode portion overlap along a vertical direction. The second voltage-resistant dielectric layer covers a side surface and part of an upper surface of the second electrode portion. A dielectric constant of each of the first voltage-resistant dielectric layer and the second voltage-resistant dielectric layer is greater than a dielectric constant of the interlayer dielectric layers.
An analog-to-digital converter can include: a charge distribution and holding module configured to sample a to-be-converted signal, and to perform subtraction on the to-be-converted signal and a target reference voltage by charge distribution, in order to generate a positive-phase output voltage and a negative-phase output voltage on a first and second electric rails, respectively; a common-mode voltage compensation module coupled with the first and second electric rails, and being configured to inject common-mode charges to compensate the distributed charges of the charge distribution and holding module, and to reduce a difference between a common-mode output voltage of the charge distribution and holding module and an expected value; and a comparator configured to provide a logic signal based on a comparison between the positive-phase output voltage and the negative-phase output voltage, where the logic signal corresponds to a target digital signal of the analog-to-digital converter.
A method of forming an isolation trench, can include: forming a trench in a substrate, the trench extending from a first surface of the substrate to an interior of the substrate; and forming at least two layers of different filling materials in the trench to completely fill the trench, where a step coverage of each layer of filling material is better than a step coverage of the previous layer of filling material.
A semiconductor device can include: a substrate; a well region located in the substrate and having a first doping type; a body region located in the substrate and having a second doping type that is opposite to the first doping type; a source region located in the body region and having the first doping type; a drain region located in the well region and having the first doping type; an isolation structure located on the substrate and between the drain region and the source region; and a gate structure located on the isolation structure and including a first gate region and a second gate region, where the first gate region is of the first doping type, and the second gate region is of the second doping type.
A capacitor can include a bottom conductive structure; at least one middle conductive structure, each middle conductive structure having a first conductive pattern and a second conductive pattern surrounding an outer side of the first conductive pattern, where the first conductive pattern and the second conductive pattern of each layer of the middle conductive structure form an interdigitated structure; and a top conductive structure having a third conductive pattern and a fourth conductive pattern arranged at an outer side of the third conductive pattern, where the third conductive pattern and the fourth conductive pattern form an interdigitated structure.
ETCHING METHOD FOR SEMICONDUCTOR STRUCTURE COMPRISING SUBSTRATE, FIRST STRUCTURE LOCATED ON PART OF TOP SURFACE OF THE SUBSTRATE, SIDEWALLS STRUCTURE AND FIELD EFFECT TRANSISTOR
A method of etching for a semiconductor structure having a substrate, and a first structure located on part of a top surface of the substrate, where two side surfaces of the first structure are configured as sidewalls, can include: forming an insulation layer to cover the substrate, the first structure, and the sidewalls; performing a dry etching process to etch a first portion of the insulation layer; and performing a wet etching process to etch a remaining portion of the insulation layer, in order to expose the top surface of the substrate, where a thickness of the first portion of the insulation layer etched by the dry etching process is greater than a thickness of the remaining portion of insulation layer etched by the wet etching process, in order to decrease formation of cavity in the substrate and/or sidewalls.
A synchronization signal transmission method employed by a backlight system, the backlight system having a master device, a plurality of slave devices, and a plurality of LED strings, can include: injecting a synchronization signal into a power supply voltage, in order to generate a first signal; inputting the first signal to a power supply port of each slave device, in order to simultaneously transmit the synchronization signal to each slave device, where each slave device is configured to drive at least one LED string; and receiving the first signal from the power supply port of each slave device for synchronization operation.
A method of synchronization signal transmission for a serial communication system having a master device and a plurality of slave devices coupled in series, can include: controlling the plurality of slave devices to be in a through state, in order to form a linked pathway when a synchronization signal needs to be transmitted; and transmitting the synchronization signal to the linked pathway, such that the plurality of slave devices receive the synchronization signal at the same time.
An LED driving circuit can include: a linear driving circuit coupled in series with an LED load, in order to control a current flowing through the LED load; a first capacitor coupled in parallel with a serial structure having the linear driving circuit and the LED load; and a control circuit configured to decrease a difference between a voltage of the first capacitor and a load voltage of the LED load, in order to increase an efficiency of the LED driving circuit.
An LED driving circuit can include: an electrolytic capacitor coupled between two outputs of a rectifier circuit; an auxiliary power supply circuit coupled in parallel with the electrolytic capacitor, and being configured to convert a voltage of the electrolytic capacitor into a power supply voltage to at least power a dimming control circuit, where the dimming control circuit is configured to generate a dimming control signal; and a linear driving circuit configured to control a driving current flowing through an LED load based on the dimming control signal, where the linear driving circuit is coupled in series with the LED load.
A laminated transformer can include: a plurality of magnetic layers; a plurality of coil layers including a primary coil having a first type of coil layer, and a secondary coil having a second type of coil layer, where each coil layer is laminated between a pair of the plurality of magnetic layers; and a plurality of non-magnetic layers, where a first of the plurality of non-magnetic layers is disposed between an adjacent pair of the coil layers in order to increase a coupling coefficient between the primary and secondary coils.
A high electron mobility transistor can include: a substrate; a channel layer located above the substrate; a potential energy barrier layer located on the channel layer; a drain electrode and a source electrode configured to at least extend downward to an upper surface of the potential energy barrier layer; a gate conductor located above the potential energy barrier layer; and a current limiting structure located on the potential energy barrier layer and extending upward along the surface of a first side of the source electrode to reduce the saturation current of the transistor, where the first side of the source electrode is a side near the gate conductor.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
An information feedback method can include: transmitting, by a master device, an instruction to acquire specific information, where each of a plurality of slave devices when receiving the instruction serves as the current slave device; configuring the current slave device in the communication link in the first mode to receive the instruction from the master device or a previous slave device, and forwarding the instruction to a next slave device; connecting input port SDI and output port SDO of the current slave device by controlling the current slave device in the second mode to form a first pathway; determining, by the current slave device, whether the specific information is present in the current slave device to obtain a corresponding determination result; and then selectively configuring, by the current slave device, a potential of the first pathway of the current slave device to be at a first level.
A method of making a bevel structure can include: forming an insulating layer on a substrate; forming a first photoresist layer on the insulating layer; performing an exposure and development process on the first photoresist layer to form a second photoresist layer; using the second photoresist layer as a mask to perform a first etching process from an upper surface of the exposed insulating layer until the upper surface of the substrate is exposed; removing part of a first side of the second photoresist layer to continuously expose the upper surface of the insulating layer; using a retained portion of the second photoresist layer as a mask to perform a second etching process from the upper surface of the exposed insulating layer to inside the insulation layer to form a stair-step insulating layer with decreasing length; and wet etching the stair-step insulating layer to form a smooth bevel structure.
An address extension circuit for configuring an address of a chip, can include where: the address extension circuit is configured to encode the address of the chip differently according to different state information of at least one address pin of the chip; and the state information of the address pin is configured to comprise at least one of floating, coupling with a communication input pin of the chip, and coupling with a communication output pin of the chip.
A single-wire communication method for a single-wire communication system having a master device and a plurality of slave devices, where the master device and each of the plurality of slave devices are sequentially connected through a single wire, the method can include: sequentially transmitting an addressing command to each of the plurality of slave device by the master device, where each of the plurality of slave devices when receiving the addressing command serves as a current slave device; setting an address of the current slave device as address data of the received addressing command when the current slave device has not been addressed; and transmitting the received addressing command to a next slave device when the current slave device has been addressed.
A single wire serial communication method for a system having a master device and a plurality of slave devices sequentially connected by a single wire can include: in each communication, transmitting a data packet by the master device, and sequentially receiving the data packet by each of the slave devices; receiving the data packet and forwarding the data packet to a next slave device by a current slave device, where each of the plurality of slave devices when receiving the data packet serve as the current slave device; modifying device address data in the data packet by the current slave device; and comparing the device address data in the data packet received by the current slave device against a preset data or the device address data in the data packet transmitted by the master device, in order to find at least one target slave device in the communication.
A multi-phase voltage converter can include: a control chip configured to generate N pulse distribution signals, where N is a positive integer greater than 1; a power conversion module comprising N first-level conversion modules; where the first-level conversion module comprises at least one second-level conversion module, and the second-level conversion module comprises at least one third-level conversion module; where when the second-level conversion module comprises multiple third-level conversion modules, the multiple third-level conversion modules are coupled in parallel with each other; and where the first-level conversion module receives a corresponding one of the N pulse distribution signals, the second-level conversion module receives a first phase distribution signal generated based on the corresponding pulse distribution signal, and the third-level conversion module receives a second phase distribution signal generated based on the first phase distribution signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A communication system can include: at least two communication channels, each of which comprises at least one chip coupled in series, wherein each chip comprises a communication input pin, a communication output pin, and at least one addressing pin, and connections of the addressing pin in the chip comprise one of floating, coupling with the communication input pin of the chip, and coupling with the communication output pin of the chip; and a master device configured to identify each communication channel according to level information of each addressing pin of at least first chip in each communication channel, where the first chip in each communication channel is connected to a corresponding output port of the master device.
A semiconductor device having an LDMOS transistor can include: a first deep well region having a first doping type; a drift region located in the first deep well region and having a second doping type; and a drain region located in the drift region and having the second doping type, where the second doping type is opposite to the first doping type, and where a doping concentration peak of the first deep well region is located below the drift region to optimize the breakdown voltage and the on-resistance of the LDMOS transistor.
H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A magnetic element can include: at least one group of inner cores; where each group of inner cores comprises a lower magnetic core cover plate, a first winding, at least one middle magnetic core cover plate, a second winding, and an upper magnetic core cover plate that are stacked in sequence; where the first winding and the second winding are spaced by the at least one corresponding middle magnetic core cover plate; and where materials of the upper magnetic core cover plate, the middle magnetic core cover plate, and the lower magnetic core cover plate comprise a metal magnetic powder core material.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
A leakage protection circuit for a lighting system can include: a pull-down current generation circuit configured to generate a pull-down current flowing from a DC bus to a reference voltage; and a control circuit configured to control the pull-down current generation circuit to generate a varied pull-down current during an operating interval, and to determine whether leakage occurs in accordance with a change state of a detection voltage signal representative of a voltage on the DC bus in a detection time interval, where the detection time interval is within the operating interval.
H02H 3/32 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to difference between voltages or between currentsEmergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to phase angle between voltages or between currents involving comparison of the voltage or current values at corresponding points in different conductors of a single system, e.g. of currents in go and return conductors
G01R 31/52 - Testing for short-circuits, leakage current or ground faults
H02H 1/00 - Details of emergency protective circuit arrangements
H05B 45/50 - Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDsCircuit arrangements for operating light-emitting diodes [LED] responsive to LED lifeProtective circuits
28.
INDUCTOR, MANUFACTURING METHOD FOR INDUCTOR, ENCAPSULATION MODULE, AND MANUFACTURING METHOD FOR ENCAPSULATION MODULE
An inductor can include at least one winding, where each winding comprises a coil body and at least two lead-out terminals being in contact with the coil body; a first encapsulation body configured to at least encapsulate part of the lead-out terminals and part of the coil body, and to expose the lead-out terminals; and where the first encapsulation body includes an insulating main material and magnetic particles dispersed in the insulating main material.
H01F 41/00 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
H01F 41/26 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids using electric currents
A module structure can include a first type structure including a first encapsulation body having a magnetic property, and at least one inductive element, where at least part of the inductive element is encapsulated in the first encapsulation body; a second type structure including a second encapsulation body having a non-magnetic property, and at least one non-inductive element, where the non-inductive element is encapsulated in the second encapsulation body; and pin structures located on exposed surfaces of the first type structure and/or the second type structure, in order to lead out corresponding electrodes.
A magnetic structure can include: a first magnetic component and a second magnetic component; two magnetic columns configured to form a magnetic flux loop with at least part of the first magnetic component and at least part of the second magnetic component, where at least one of the two magnetic columns is wound with one or more windings; and where the at least part of the first magnetic component is located between the two magnetic columns.
An integrated substrate can include: a top structure having a plurality of first pads for mounting electronic devices, where each of the first pads is electrically coupled with a corresponding electronic device, such that each of the first pads has a corresponding potential; a bottom structure having a plurality of second pads for coupling with peripheral circuits; a plurality of intermediate metal layers stacked up/down and located between the top structure and the bottom structure; a first type of penetrating connection structures configured to couple the intermediate metal layers and a part of the first pads, such that the intermediate metal layers have the same potential as the part of the first pads; and a second type of penetrating connection structures configured to couple the intermediate metal layers and the second pads, such that the second pads have the same potential as the part of the first pads.
A method of manufacturing a semiconductor device structure can include: forming a first gate dielectric layer on a first region of a semiconductor substrate, and forming a second gate dielectric layer on a second region of the semiconductor substrate; forming a conductive layer on the first and second gate dielectric layers; forming a barrier layer on the conductive layer; patterning the barrier layer to form a barrier pattern; etching the conductive layer to form first and second gates using the barrier pattern as a mask; forming a photolithography pattern on the semiconductor substrate, where the photolithography pattern exposes the well implantation area of the first region and a portion of the barrier pattern on the first gate; forming a well region in the well implantation area using the lithography pattern and the exposed barrier pattern as masks; and removing the photolithography pattern and the barrier pattern.
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
A terminal structure of a bidirectional switching device, where the terminal structure can include: a field plate located on a top surface of a well region and between a first voltage-withstand region and a second voltage-withstand region, where the bidirectional switching device comprises the well region, and the first and second voltage-withstand regions located in the well region; and where a potential is connected to the field plate, in order to decrease an electrical leakage of a parasitic transistor, where the parasitic transistor is formed by the first voltage-withstand region, the well region, and the second voltage-withstand region.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
A method of driving a switching element in a switching circuit, where the switching element comprises a plurality of power transistors coupled in parallel, can include: determining a state of a load in the switching circuit; decreasing a driving voltage of at least one power transistor in order to reduce driving loss of the switching element when a load is in a first load state; and maintaining driving voltages of the plurality of power transistors at a first threshold when the load is in a second load state.
A stacked packaging structure can include: a lead frame; a die located on a first surface of the lead frame; an electrical interconnection structure located above the die and configured to be electrically connected with corresponding electrodes of the die; a diode located on the electrical interconnection structure; and where a lower surface of the diode is electrically connected to the electrical interconnection structure, and the electrode on an upper surface of the diode is connected to the corresponding pins of the lead frame.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/00 - Details of semiconductor or other solid state devices
H02M 3/00 - Conversion of DC power input into DC power output
36.
SYNCHRONOUS MONITORING CIRCUIT AND SYNCHRONOUS MONITORING METHOD FOR BATTERY MANAGEMENT SYSTEM
A method of synchronous monitoring for a battery management system, where the battery management system includes a battery pack having a plurality of batteries coupled in series, can include: obtaining two measurement results representing a state parameter of a battery at a same time; and determining a final result, where a first of the two measurement results is a main measurement result and a second of the two measurement results is an auxiliary measurement result, and the main measurement result is configured as the final result.
A current sampling circuit for a multi-level DC-DC converter having first and second power switches connected in series, and a first inductor having one terminal coupled to a common node of the first and second power switches, where the current sampling circuit is configured to: receive a first signal representing a current flowing through the first power switch; receive a second signal representing a current flowing through the second power switch; and generate a third signal representing an inductor current flowing through the first inductor according to the first signal and the second signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
38.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method of making a semiconductor device can include: providing a semiconductor substrate; etching the substrate to form a trench therein; filling the trench with an insulating material, wherein a top surface of the insulating material is higher than a top surface of the trench; etching the insulating material to expose sharp corners at a junction of sidewalls of the trench and an upper surface of the substrate; forming a field oxide layer on a portion of the upper surface of the substrate and the insulating material, where the field oxide layer covers one of the sharp corners; and oxidizing correspondingly the sharp corner covered by the field oxide layer, at the junction of the trench sidewalls and the upper surface of the substrate, in order to form into a round corner.
A method of making a semiconductor device can include: etching a substrate to form a trench in the substrate; filling the trench with an insulating material layer, wherein a top surface of the insulating material layer is higher than a top surface of the trench; etching the insulating material layer to form a side groove between the insulating material layer and a top side wall of the trench to expose a corner at a top of the trench; and forming a field oxide layer on a top surface of the substrate by an oxidation process, wherein the corner at the top of the trench is correspondingly oxidized to form into a round corner by the oxidation process.
A driving circuit of a switch array for controlling one of a plurality of battery modules coupled in series, where: each battery module comprises a plurality of batteries coupled in series; the driving circuit is configured to generate corresponding driving signals to control corresponding switches in the switch array, such that one battery that is selected to be balanced, is coupled between positive and negative poles of a DC bus voltage; and a reference ground of the driving circuit is configured as the negative pole of the DC bus voltage.
A method of making a semiconductor device can include: etching a substrate to form a trench in the substrate; forming a liner oxide layer on side surfaces and a process bottom portion of the trench through an oxide layer formation method; and where an oxidation time of a junction between an upper surface of the semiconductor substrate and side walls of the trench is increased by the oxide layer formation process, in order to smoothen the junction.
A lumped power supply circuit for converting an AC signal into a DC signal, the lumped power supply circuit including: a cascaded H-bridge circuit having N H-bridge sub-circuits connected in series between two input terminals of the AC signal, and being configured to convert the AC signal into N first voltage signals, where N is a positive integer greater than or equal to 2; a high-frequency filtering module configured to filter the N first voltage signals, and to generate N second voltage signals; a DC conversion module to receive the N second voltage signals, and to convert the N second voltage signals into at least one third voltage signal; and a lumped power buffer module having an output terminal coupled to a load, and being configured to receive the at least one third voltage signal, and to filter out part of power frequency fluctuations in the third voltage signal.
H02M 7/219 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
H02M 7/23 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only arranged for operation in parallel
H02M 1/14 - Arrangements for reducing ripples from DC input or output
43.
CONTROL CIRCUIT AND CONTROL METHOD FOR THREE-LEVEL DC-DC CONVERTER
A method of controlling a three-level DC-DC converter having first, second, third, and fourth power switches coupled in series between an input voltage and a reference ground, and a flying capacitor coupled between a common node of the first and second power switches and a common node of the third and fourth power switches, can include: operating the flying capacitor in a first mode in which the voltage across the flying capacitor is controlled to not be decreased in at least two consecutive first intervals, where each first interval is half of a switching period of the three-level DC-DC converter; and operating the flying capacitor in a second mode in which the voltage across the flying capacitor is controlled not to be increased in at least two consecutive first intervals, such that the voltage across the flying capacitor approaches a predetermined value.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
A digital isolator can include: a first die having one of an encoding circuit and a decoding circuit; a second die having one of the encoding circuit and the decoding circuit that is not in the first die, where the first die and the second die are separated from each other; and an isolated transmission structure configured to transmit an encoded signal generated by the encoding circuit to the decoding circuit.
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
45.
THREE-LEVEL DC-DC CONVERTER AND CONTROL CIRCUIT THEREOF
A control circuit of a three-level DC-DC converter, can include where: the three-level DC-DC converter includes first, second, third, and fourth power switches coupled in series between an input voltage and a reference ground, and a flying capacitor coupled between a common node of the first and second power switches and a common node of the third and fourth power switches; and the control circuit is configured to adjust a phase difference between driving signals of the first and second power switches, and duty ratios of the first and second power switches, according to an error between a voltage across the flying capacitor and a predetermined value, such that the voltage across the flying capacitor is stabilized at the predetermined value.
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
H02M 1/084 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters using a control circuit common to several phases of a multi-phase system
46.
Back electromotive force sensing circuit, back electromotive force sensing method and driving module of three-phase permanent magnet motor
A back electromotive force sensing circuit can include: a sampling circuit configured to acquire a sampling signal representing a phase current of one of three phases of a three-phase permanent magnet motor, where the three-phase permanent magnet motor adopts sine wave control; and a signal processing circuit configured to receive the sampling signal, and to obtain a back electromotive force of the one phase according to a difference between a phase voltage of the one phase and a sum of a voltage across a phase resistor and a voltage across a phase inductor of the one phase.
H02P 6/08 - Arrangements for controlling the speed or torque of a single motor
H02P 6/182 - Circuit arrangements for detecting position without separate position detecting elements using back-emf in windings
H02P 27/08 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using DC to AC converters or inverters with pulse width modulation
A power converter can include: a plurality of circuit modules coupled in parallel between a first port and a second port, where each of the plurality of circuit modules includes a switching power stage circuit having a first magnetic element coupled between a switch node of the switching power stage circuit and a first terminal of the second port, at least one switch group having first and second transistors and being coupled between a first terminal of the first port and a first terminal of the switching power stage circuit, and at least one first energy storage capacitor for providing energy to a load of the power converter; and a plurality of second energy storage capacitors configured to periodically store energy and release energy to corresponding first energy storage capacitors.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A zero-voltage-switching control circuit for a switching power supply having a main power switch and a synchronous rectifier switch, is configured to: control the synchronous rectifier switch to be turned on for a first time period before the main power switch is turned on and after a current flowing through the synchronous rectifier switch is decreased to zero according to a switching operation of the main power switch in a previous switching period of the main power switch; and where a drain-source voltage of the main power switch is decreased when the main power switch is turned on, in order to reduce conduction loss.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
A digital isolator can include: an encoding circuit configured to receive an input digital signal, and to encode a rising edge and a falling edge of the input digital signal into different encoded signals; an isolating element coupled to the encoding circuit, and being configured to transmit the encoded signal in an electrical isolation manner; and a decoding circuit configured to receive the encoded signal through the isolating element, and to decode the encoded signal to obtain the rising edge and the falling edge, in order to output an output digital signal consistent with the input digital signal.
H03K 7/10 - Combined modulation, e.g. rate modulation and amplitude modulation
H04L 25/06 - DC level restoring meansBias distortion correction
H04L 25/49 - Transmitting circuitsReceiving circuits using code conversion at the transmitterTransmitting circuitsReceiving circuits using predistortionTransmitting circuitsReceiving circuits using insertion of idle bits for obtaining a desired frequency spectrumTransmitting circuitsReceiving circuits using three or more amplitude levels
50.
Digital isolator and digital signal transmission method
A digital isolator can include: an encoding circuit configured to receive and encode an input digital signal, in order to generate an encoded signal, wherein a rising edge of the input digital signal is encoded as a first pulse sequence, and a falling edge of the input digital signal is encoded as a second pulse sequence; an isolation element coupled to the encoding circuit, and being configured to transmit the encoded signal in an electrically isolated manner; and a decoding circuit configured to receive the encoded signal through the isolation element, and to decode the encoded signal, in order to generate an output digital signal consistent with the input digital signal.
H03M 13/37 - Decoding methods or techniques, not specific to the particular type of coding provided for in groups
H04L 25/49 - Transmitting circuitsReceiving circuits using code conversion at the transmitterTransmitting circuitsReceiving circuits using predistortionTransmitting circuitsReceiving circuits using insertion of idle bits for obtaining a desired frequency spectrumTransmitting circuitsReceiving circuits using three or more amplitude levels
A sample-and-hold amplifier can include: an operational amplifier; a sampling capacitor having a first terminal coupled to an inverting input terminal of the operational amplifier, and a second terminal coupled to a reference ground; and a switching circuit configured to switch feedback paths of the sample-and-hold amplifier in a first stage and a second stage, such that an offset voltage of the operational amplifier is at least partially eliminated.
A method of manufacturing a semiconductor device having a combination structure of a horizontal oxide layer structure and a vertical oxide layer structure, can include: etching from an upper surface of the semiconductor substrate to inside of the semiconductor substrate to form a trench; depositing oxides in the trench to form the vertical oxide layer structure; etching the vertical oxide layer structure from an upper surface thereof to decrease height of the vertical oxide layer structure, and to make a top surface of the vertical oxide layer structure be below the upper surface of the semiconductor substrate, in order to expose side surfaces of the trench; and forming, by an oxidation process, the horizontal oxide layer structure to cover part of the upper surface of the semiconductor substrate and the upper surface of the vertical oxide layer structure.
A semiconductor device can include: a semiconductor doped region; a patterned interlayer dielectric layer located on the semiconductor doped region; an electrode structure connected to the semiconductor doped region through opening holes of the interlayer dielectric layer; a patterned metal silicide layer located on the semiconductor doped region; where the electrode structure comprises a first conductive pillar and a second conductive pillar, the first conductive pillar is connected to the metal silicide layer, and the second conductive pillar is connected to an upper surface of the semiconductor doped region; and where the first conductive pillar and the second conductive pillar are not in contact with a heavily doped region in the semiconductor doped region, and the doping concentration of the semiconductor doped region is not greater than 1018 cm−3.
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
54.
Digital isolator comprising an isolation element with a first secondary winding for generating a first differential signal in phase with an encoded signal and a second secondary winding for generating a second differential signal in an opposite phase with the encoded signal
A digital isolator can include: an encoding circuit configured to receive an input digital signal, and to generate an encoded signal according to the input digital signal; an isolation element having a primary winding, a first secondary winding, and a second secondary winding; a differential circuit configured to receive first and second differential signals, and to generate a difference signal according to the first and second differential signals; and a decoding circuit coupled with the differential circuit, and being configured to receive the difference signal, and to generate a target digital signal after decoding.
H04B 10/80 - Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups , e.g. optical power feeding or optical transmission through water
H04L 25/49 - Transmitting circuitsReceiving circuits using code conversion at the transmitterTransmitting circuitsReceiving circuits using predistortionTransmitting circuitsReceiving circuits using insertion of idle bits for obtaining a desired frequency spectrumTransmitting circuitsReceiving circuits using three or more amplitude levels
55.
Three dimensional circuit module and method for manufacturing the same
A three dimensional circuit module can include: a plurality of PCBs located on different faces, where surfaces of the PCBs include circuit modules; a plurality of circuit assemblies connected through components; where the plurality of circuit assemblies comprises at least one first circuit assembly having a first main board and at least one first side board that are located on different faces, where the first main board and at least one first side board of the first circuit assembly are obtained by integrated curing molding process; and where the first main board of the first circuit assembly is located on one PCB board, and the first side board is located on an adjacent PCB board, in order to realize connection of adjacent PCBs.
An auxiliary circuit of a power converter is disclosed, where: the auxiliary circuit is coupled to a load of the power converter; and the auxiliary circuit is configured to generate an auxiliary current provided to the load, in order to limit a variation range of a load voltage of the load when a variation of an output signal of the power converter is greater than a predetermined value.
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
57.
ANALOG SIGNAL PROCESSING CIRCUIT AND METHOD FOR ELIMINATING DC OFFSET VOLTAGE
An analog signal processing circuit can include a front-stage processing module configured to process an analog signal to generate a first differential signal; at least one switched capacitor circuit, coupled with the front-stage processing module to receive the first differential signal, and configured to integrate or sample and hold the first differential signal to generate a second differential signal; and where the front-stage processing module and the at least one switched capacitor circuit receive synchronous control signals, the front-stage processing module chops the analog signal according to the control signals, and the at least one switched capacitor circuit is in different operating modes at a first phase and a second phase of an operation cycle of the control signals, in order to eliminate DC offset voltages of the front-stage processing module and the at least one switched capacitor circuit.
A digital isolator can include: an encoding circuit configured to receive an input digital signal, and to encode a rising edge and a falling edge of the input digital signal into different coded signals; an isolating element coupled to encoding circuit, and being configured to transmit the coded signal in an electrical isolation manner; and a decoding circuit configured to receive the coded signal through the isolation element, and to decode the coded signal to obtain the rising edge and the falling edge, in order to output an output digital signal consistent with the input digital signal, where the rising edge of the input digital signal is encoded as a first pulse sequence, and the falling edge of the input digital signal is encoded as a second pulse sequence different from the first pulse sequence.
A charging circuit can include: a first module having a plurality of power transistors, and being coupled between a first port and a reference ground; a second module having a plurality of power transistors, and being coupled between a second port and the reference ground; at least one inductor coupled between the first module and the second module; and where at least one of the first module and the second module forms a multi-level converter with the at least one inductor.
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 7/483 - Converters with outputs that each can have more than two voltage levels
60.
Signal sampling method, sampling circuit, integrated circuit and switching power supply thereof
A sampling circuit for a switching power supply, can include: a first sampling circuit configured to acquire a first sampling signal of a current flowing through an inductor in the switching power supply; and a second sampling circuit configured to obtain a compensation signal with a same rising slope as the first sampling signal within a turn-off delay time of a power switch in the switching power supply, and to superimpose the compensation signal on the first sampling signal to generate a second sampling signal.
H02M 5/08 - Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using impedances using capacitors only
A semiconductor device can include: a substrate having a first doping type; a first well region located in the substrate and having a second doping type, where the first well region is located at opposite sides of a first region of the substrate; a source region and a drain region located in the first region, where the source region has the second doping type, and the drain region has the second doping type; and a buried layer having the second doping type located in the substrate and below the first region, where the buried layer is in contact with the first well region, where the first region is surrounded by the buried layer and the first well region, and the first doping type is opposite to the second doping type.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/82 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A switching power supply circuit can include: a transformer having a primary winding and a secondary winding; a resonant capacitor and a resonant inductor coupled in series with the primary winding to form a series structure; a power switch module receiving an input voltage and connecting two terminals of the series structure to form a resonance circuit; an output rectification module coupled to the secondary winding and generating an output voltage; an operating mode control module receiving the input voltage and the output voltage, to control the output rectification module such that the switching power supply circuit is operated in the LLC mode or the AHB mode based on a ratio of the input voltage and the output voltage relative to a predetermined value.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
A multilevel self-balance control circuit can include: a voltage divider unit configured to receive and divide an input voltage; a voltage-controlled charge source load coupled to an output terminal of the voltage divider unit, and being configured to adaptively adjust charge amount input to the voltage-controlled charge source load based on an output voltage of the voltage divider unit, such that a total amount of charges flowing through the voltage-controlled charge source load during a period of each working state of the voltage divider unit is positively correlated with the output voltage of the voltage divider unit, thereby forming a negative feedback loop to achieve voltage balancing of the voltage divider unit; and a control unit configured to generate control signals for the voltage divider unit and the voltage-controlled charge source load, thereby coordinately controlling the voltage divider unit and the voltage-controlled charge source load.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H02M 3/00 - Conversion of DC power input into DC power output
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 7/04 - Conversion of AC power input into DC power output without possibility of reversal by static converters
A method of performing fault detection can include: performing a sampling operation to obtain a first voltage signal and a first current signal from a circuit path; performing a phase adjustment on the first voltage signal and the first current signal to generate a second voltage signal and a second current signal; transmitting the second voltage signal and the second current signal to a fault detection network that is pre-trained to accordingly process and generate a fault detection result; and operably disconnecting the circuit path when a fault is detected based on the fault detection result.
A cascade circuit can include: N power conversion units connected in series between two ports of a power supply, where N is a positive integer greater than or equal to 2; a controller connected to one of the N power conversion units, and being configured to send a signal to be transmitted through the connected power conversion unit; where each of the power conversion units is configured to send the signal to be transmitted to a next-stage power conversion unit when the each of the power conversion unit shares a reference voltage with the adjacent next-stage power conversion unit; and where the signal to be transmitted is controlled to be transmitted from a previous-stage power conversion unit to a next-stage power conversion unit in sequence until the signal to be transmitted is received by all of the N power conversion units.
A method of controlling a power convertor to perform diming control for a light-emitting diode (LED) load, can include: adjusting a length of a switching period of the power converter in accordance with a dimming signal; and controlling the power converter to generate a drive current corresponding to the dimming signal.
A method of controlling a multi-phase power converter having a plurality of power stage circuits coupled in parallel, can include: obtaining a load current of the multi-phase power converter; enabling corresponding power stage circuits to operate in accordance with the load current, such that a switching frequency is maintained within a predetermined range when the load current changes; and controlling the power stage circuits to operate under different modes in accordance with the load current, such that the switching frequency is maintained within the predetermined range when the load current changes.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
G01R 19/175 - Indicating the instants of passage of current or voltage through a given value, e.g. passage through zero
H02M 1/084 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters using a control circuit common to several phases of a multi-phase system
H02M 1/32 - Means for protecting converters other than by automatic disconnection
A method of controlling a switch-mode converter can include: obtaining an overcurrent reference threshold according to an output voltage sampling signal indicative of an output voltage of the switch-mode converter; and generating an over current protection triggering signal in response to an output current sampling signal indicative of an output current of the switch-mode converter and the overcurrent reference threshold meet a predetermined criterion, thereby triggering the switch-mode converter to enter a protection state.
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 7/06 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
69.
Control circuit for switching converter with minimum on-time and off-time control and wide duty range
A control circuit for a switching converter, where: in a first operation state, the control circuit controls a switching period of the switching converter to remain unchanged, controls a turn-on time of a power transistor in the switching converter to be not less than a minimum turn-on time in each switching period, and controls a turn-off time of the power transistor to be not less than a minimum turn-off time; in a second operation state, the control circuit controls the turn-on time of the power transistor to be the minimum turn-on time in each switching period, and adjusts the switching period to further reduce a duty cycle; and in a third operation state, the control circuit controls the turn-off time of the power transistor to be the minimum turn-off time in each switching period, and adjusts the switching period to further increase the duty cycle.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A control circuit for a switching power supply, can include: a sampling circuit configured to obtain an inductor current and a drain-source voltage of a main power transistor in a power stage circuit, in order to generate a sampling signal; where the control circuit generates an inductor current sampling signal according to the sampling signal during an on-period of the main power transistor; and where during an off-period of the main power transistor, the control circuit generates a zero-crossing signal of the inductor current and an overvoltage signal of an output voltage of the switching power supply according to the sampling signal.
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
H02M 1/32 - Means for protecting converters other than by automatic disconnection
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
71.
Phase-locked loop circuit and method for controlling the same
A method for controlling a phase-locked loop circuit, can include: acquiring values of a voltage-controlled oscillator capacitor array control signal respectively corresponding to desired values of a frequency control word signal and acquiring values of a charge pump current control signal respectively corresponding to the desired values of the frequency control word signal in a calibration mode, where the frequency control word signal characterizes a ratio of a desired locked frequency to a frequency of a reference signal; and determining a target value of the voltage-controlled oscillator capacitor array control signal corresponding to a target value of the frequency control word signal and a target value of the charge pump current control signal corresponding to the target value of the frequency control word signal in a phase-locked mode, in order to control the phase-locked loop circuit to achieve phase lock.
H03L 7/089 - Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
72.
Control circuit for a resonant converter having at least two output signals
A control circuit for a resonant converter having at least two output signals, the control circuit including: a charge feedback circuit configured to generate a charge feedback signal representing a resonant current of a resonant circuit in the resonant converter; and a switching control signal generating circuit configured to generate switching control signals according to the charge feedback signal and feedback signals representing error information of each of the at least two output signals.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/00 - Conversion of DC power input into DC power output
73.
Control circuit, resonant converter and integrated circuit control chip
A control circuit for a resonant converter, can include: a feedforward circuit configured to generate a feedforward current; a charge feedback circuit configured to receive a resonant current sampling signal representing a resonant current of the resonant converter in a first mode to generate a charge feedback signal, and to receive the resonant current sampling signal and the feedforward current together to generate the charge feedback signal in a second mode; and a driving control circuit configured to generate driving signals according to the charge feedback signal and a first threshold signal, in order to control switching states of power transistors of the resonant converter, where the first threshold signal is generated according to an error compensation signal representing an error information between a feedback signal of an output signal of the resonant converter and a reference signal.
A stacked package structure for a chip, can include: a substrate having a first surface and a second surface opposite thereto; a first die having an active and back faces, where the active face of the first die includes pads; a first enclosure that covers the first die; an interlinkage that extends to the first enclosure to electrically couple with the pads; a first redistribution body electrically coupled to the interlinkage, and being partially exposed on a surface of the stacked package structure to provide outer pins for electrically coupling to external circuitry; a penetrating body that penetrates the first enclosure and substrate; a second die having an electrode electrically coupled to a first terminal of the penetrating body; and a second terminal of the penetrating body that is exposed on the surface of the stacked package structure to provide outer pins for electrically coupling to the external circuitry.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 25/03 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes
H01L 23/00 - Details of semiconductor or other solid state devices
75.
Sensing method for wheel rotation, wheel localization method, and wheel localization system
A method of sensing wheel rotation can include: sensing magnetic force information in an environment of a wheel by a magnetometer to obtain measured magnetic force information; generating relative magnetic force information by performing mathematical operation processing in accordance with the measured magnetic force information, where the relative magnetic force information does not change with geomagnetic field and does change with a rotation angle of a wheel; and obtaining angle information related to the rotation angle of the wheel in accordance with the relative magnetic force information.
B60C 23/04 - Signalling devices actuated by tyre pressure mounted on the wheel or tyre
G01B 7/30 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes
G01D 5/12 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means
G01L 17/00 - Devices or apparatus for measuring tyre pressure or the pressure in other inflated bodies
A frequency modulation circuit can include: a modulation circuit configured to generate a digital modulation signal and an analog modulation signal according to an input signal of the frequency modulation circuit; and a phase-locked loop having a voltage-controlled oscillator configured to receive a reference frequency, and to modulate a frequency of an output signal of the voltage-controlled oscillator according to the analog modulation signal and the digital modulation signal.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
H04B 1/66 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission for reducing bandwidth of signalsDetails of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission for improving efficiency of transmission
77.
Voltage detection circuit, switching converter and integrated circuit
A voltage detection circuit for a switching converter having a switch and a magnetic element connected in series, where a first terminal of the switch and a first terminal of the magnetic element are connected to a common node, the voltage detection circuit including: an average circuit configured to receive a first voltage across the switch, and to generate a second voltage representing an average value of the first voltage; and where the second voltage represents a voltage between a second terminal of the switch and a second terminal of the magnetic element in a steady state of the switching converter.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
A driving circuit and a driving method are provided. According to embodiments of the present disclosure, a power switch is driven by constant voltage or constant current during different time periods. The power switch is driven by using a first driving current during a Miller platform period, and the power switch is driven by using a second driving current when the Miller platform period ends, where the first driving current is less than the second driving current, so as to optimize EMI, reduce loss and improve efficiency.
H03K 17/10 - Modifications for increasing the maximum permissible switched voltage
H03K 17/16 - Modifications for eliminating interference voltages or currents
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 17/06 - Modifications for ensuring a fully conducting state
79.
Zero-crossing correction circuit and zero-crossing correction method for a switching converter
A zero-crossing correction circuit for a switching converter having a main power switch and a synchronous power switch connected in series, can include: a detection circuit configured to detect an on-off state of a body diode of the synchronous power switch in a first time interval after the synchronous power switch is turned off and generate a detection signal; and a control and adjustment circuit configured to adjust a turn-off moment of the synchronous power switch according to an on-off state of the main power switch in a second time interval after the synchronous power switch is turned off and the detection signal.
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
H02M 1/38 - Means for preventing simultaneous conduction of switches
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
80.
Control circuit and AC-DC power supply applying the same
A control circuit and an AC-DC power supply are provided. A ripple reference signal characterizing an industrial frequency ripple component of an output voltage is added to a reference voltage of a desired output voltage, so that a reference and a feedback voltage of the output voltage are almost the same at the industrial frequency band. In addition, a voltage compensation signal outputted by an error compensation circuit does not include the industrial frequency ripple component, and the voltage compensation signal without the industrial frequency ripple component does not affect a tracking reference of the current loop. Therefore, the loop can be designed without considering limit of the industrial frequency on a cut-off frequency of the loop, thereby effectively increasing the cut-off frequency of the loop and improving a dynamic response speed of the loop.
H02M 1/42 - Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
H02M 7/06 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
81.
DRIVING CHIP, SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor structure can include: a semiconductor substrate having a first region, a second region, and an isolation region disposed between the first region and the second region; an isolation component located in the isolation region; and where the isolation component is configured to recombine first carriers flowing from the first region toward the second region, and to extract second carriers flowing from the second region toward the first region.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
A semiconductor structure can include: a semiconductor substrate having a first region, a second region, and an isolation region disposed between the first region and the second region; an isolation component located in the isolation region; and where the isolation component is configured to recombine first carriers flowing from the first region toward the second region, and to extract second carriers flowing from the second region toward the first region.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
An electrode structure can include: a semiconductor substrate; a trench extending from an upper surface of the semiconductor substrate into the semiconductor substrate; a contact region extending from the upper surface of the semiconductor substrate into the semiconductor substrate; and filling material in the trench, wherein the contact area is in contact with outer sidewalls of the trench.
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
A power converter can include a positive input terminal and a negative input terminal, configured to receive an input voltage; a positive output terminal and a negative output terminal, configured to generate an output voltage; a first power switch and a second power switch, sequentially coupled in series between the positive input terminal and a first node; a third power switch and a fourth power switch, sequentially coupled in series between a second node and the negative input terminal; a first energy storage element coupled between a common terminal of the first power switch and the second power switch and a common terminal of the third power switch and the fourth power switch; a first switched capacitor circuit coupled between the first node and the positive output terminal; and a second switched capacitor circuit coupled between the second node and the positive output terminal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
A switched capacitor converter can include a plurality of input switch groups connected in series between an input terminal and an output terminal, where each input switch group can include two power switches connected in series. The switched capacitor converter can also include a plurality of output switch groups, where each output switch group can include two power switches connected in series. The switched capacitor converter can also include a plurality of capacitors, first terminals of which are respectively connected to the common nodes of every two series-connected power switches in the plurality of input switch groups, and second terminals of which are respectively connected to intermediate nodes of each output switch group. The switched capacitor converter can also include a plurality of inductors, where a first terminal of each output switch group can connect to a first terminal of a corresponding inductor.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
86.
LEAD FRAME, CHIP PACKAGE STRUCTURE, AND MANUFACTURING METHOD THEREOF
A method of forming a lead frame can include: providing a frame base; providing a substrate to support the frame base; and selectively etching the frame base to form first and second type pins. The first type pins are distributed in the central area of the lead frame, and the second type of the pins are distributed in the edge area of the lead frame. The first type pins are separated from the second type of the pins, and the first and second type pins are not connected by connecting bars. A pattern of a first surface of the first and second type pins is different from that of a second surface of the first and second type pins. The metal of the first surface is different from the metal of the second surface, and the second surface is opposite to the first surface.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
A power supply converter can include: an AC-DC linear circuit configured to rectify an AC input voltage to generate a DC voltage, and to transfer the input energy to an output terminal thereof during at least part of a time interval when the DC voltage is greater than an output voltage thereof, in order to generate a first output voltage and a first output current; and a conversion circuit configured to convert the first output voltage to a second output voltage, and to convert the first output current to a second output current for a load.
H02M 7/06 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
88.
CONTROL CIRCUIT, CONTROL METHOD AND VOLTAGE REGULATOR
The present disclosure discloses a control circuit, a control method and a voltage regulator. The technical solution provided by embodiments of the present disclosure can be extended to N*M phase applications by connecting N multi-phase power converters in a voltage regulator in parallel in an interleaving manner and controlling M-phase power stage circuits in each multi-phase power converter to be connected in parallel in an interleaving manner, thereby effectively achieving multi-phase interleaving control and reducing output voltage ripples.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 1/14 - Arrangements for reducing ripples from DC input or output
89.
FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
Disclosed is a field effect transistor (FET) and a method for manufacturing the same, the FET comprises: a substrate, a first well region located on the substrate, a second well region, a body contact region, a source region, a drain region and a gate conductor. The body contact region, the source region and the drain region are located in the first well region, the doping concentration of the second well region is higher than that of the first well region. A parasitic bipolar junction transistor (BJT) is located in the field effect transistor, current flowing through the BJT is controlled by adjusting doping concentration or area of the second well region. The second well region is formed in the first well region, so that the holding voltage of the FET is improved, and finally effect on the FET caused by the current flowing through the BJT can be weakened.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
90.
Inductor current reconstruction circuit, power converter and inductor current reconstruction method thereof
An inductor current reconstruction circuit of a power converter can include: a switching current sampling circuit configured to acquire at least one of a current flowing through a main power transistor and a current flowing through a rectifier transistor to generate a switching current sampling signal; an inductor current generating circuit configured to generate a reconstruction signal representing an inductor current in one complete switching cycle; and where the reconstruction signal comprises the switching current sampling signal and a current analog signal generated according to the switching current sampling signal and an inductor voltage signal representing a voltage across an inductor in the power converter.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A dimming mode detection circuit for an LED lighting system that receives an alternating current input voltage and generates a bus voltage to drive an LED load, the dimming mode detection circuit including: a leading edge detection circuit configured to generate a leading edge detection signal by detecting a leading edge of a first voltage representative of the bus voltage in one sine half-wave cycle, in order to determine whether the LED lighting system operates in a leading edge dimming mode; and a trailing edge detection circuit configured to generate a trailing edge detection signal in accordance with a time length of a first interval from a first value of the first voltage in a previous sine half-wave cycle to a second value of the first voltage in a next sine half-wave cycle, in order to determine whether the LED lighting system operates in a trailing edge dimming mode.
A control circuit for controlling a power converter can include: a constant voltage output module, a constant current output module, and a power stage circuit; and where the control circuit is configured to select one of a first feedback signal representative of output information of the constant current output module, and a second feedback signal representative of output information of the constant voltage output module as a feedback input signal based on operation states of the constant current output module and the constant voltage output module, in order to control a switching state of a power switch of the power stage circuit.
H05B 45/385 - Switched mode power supply [SMPS] using flyback topology
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
93.
Controller of switching power supply and control method thereof
A controller of a switching power supply can include: a frequency-jittering control circuit configured to generate a first frequency-jittering signal and a second frequency-jittering signal; where a jittering range of an operating frequency of a power transistor in the switching power supply is adjusted by the first frequency-jittering signal; and where a jittering amplitude of a peak value of an inductor current of the switching power supply is adjusted by the second frequency-jittering signal.
H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
A voltage converter can include: an input end configured to receive an input voltage; an output end configured to generate an output voltage; N switched capacitor circuits sequentially coupled in series between the input end and the output end, where N is a positive integer greater than or equal to 2; where each switched capacitor circuit comprises a switch circuit and a flying capacitor, and at least the flying capacitor of an i-th switched capacitor circuit is configured as an output capacitor of an (i−1)-th switched capacitor circuit, where i is a positive integer that is greater than or equal to 2 and less than or equal to N; and a first energy storage element coupled to the output end.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
95.
Controller of switching power supply having a frequency-jittering control circuit and control method thereof
A controller of a switching power supply can include: a frequency-jittering control circuit configured to generate a frequency-jittering signal adaptively; a comparator having two input terminals for respectively receiving an inductor current sampling signal and a feedback control signal, and being configured to compare the signals of the two input terminals to generate a switching control signal, in order to control a power transistor in the switching power supply; and a superimposing circuit configured to superimpose the frequency-jittering signal on one of the two input terminals of the comparator, where a switching frequency of the switching power supply varies within a preset range under different load conditions.
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
Disclosed is a vertical device, an ESD protection device having the vertical device, and a method for manufacturing the vertical device. The vertical device includes a forward diode which is formed by a semiconductor substrate and an epitaxial semiconductor layer, and a reverse Schottky barrier between an anode metal and the epitaxial semiconductor layer. The vertical device has a vertical current path from a second electrode to a first electrode, and a lateral current distribution at least partially surrounded and limited by the reverse Schottky barrier. The reverse Schottky barrier reduces the parasitic capacitance of the diode at high voltages, thereby increasing the response speed of the ESD protection device at high voltages.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
A concentration control circuit can include: a voltage feedback circuit configured to generate a current reference signal representing an error between a voltage reference signal and an output voltage feedback signal shared by each of a plurality of power stage circuits of a multi-phase power converter to adjust a respective phase current; and a clock signal generation circuit configured to generate a clock signal to adjust at least one of switching frequency and phase of each of the power stage circuits, where the clock signal is adjusted in accordance with a change of the current reference signal.
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
A control circuit for a switching converter, can include: a ripple signal generation circuit configured to generate a ripple signal with a same frequency and phase as an inductor current of the switching converter, where the ripple signal changes between zero and a preset value; a superimposing circuit configured to superimpose the ripple signal on a feedback signal representing an output voltage of the switching converter, in order to generate a loop control signal; and a switching control signal generation circuit configured to generate switching control signals according to the loop control signal and a reference signal, in order to control a switching state of a power stage circuit in the switching converter.
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H02M 1/15 - Arrangements for reducing ripples from DC input or output using active elements
99.
Power converter having power stage circuits and an auxiliary module
A power converter can include at least one first power stage circuit and a second power stage circuit, where each of the at least one first power stage circuit can include: at least one power switch, configured as a main power switch; a first magnetic element; a first energy storage element configured to be coupled to a first node of the first power stage circuit together with one adjacent power stage circuit, and to be charged or discharged through the adjacent power stage circuit; and an auxiliary module configured to ensure that a current flowing through the first magnetic element is not less than zero in a current discontinuous mode, where a first terminal of the second power stage circuit is coupled to an adjacent first power stage circuit.
H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
100.
Parallel output converters connected to a split midpoint node on an input converter
A power converter can include: positive and negative input terminals configured to receive an input voltage; positive and negative output terminals configured to generate an output voltage; first and second power switches sequentially coupled in series between the positive input terminal and a first node; third and fourth power switches sequentially coupled in series between a second node and the negative input terminal, where there is no physical connection between the first node and the second node; a first energy storage element coupled between a common terminal of the first and second power switches and a common terminal of the third and fourth power switches; a first multi-level power conversion circuit coupled between the first node and the positive output terminal; and a second multi-level power conversion circuit coupled between the first node and the positive output terminal.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
patents