Grinding wheel truing tool and manufacturing method thereof, and truing apparatus, method for manufacturing grinding wheel and wafer edge grinding apparatus using the same
The present invention relates to a grinding wheel truing tool, its manufacturing method, and a truing apparatus, a method for manufacturing a grinding wheel and a wafer edge grinding apparatus using the same. The grinding wheel truing tool of the present invention compensates a groove of a fine-grinding wheel for fine-grinding a wafer edge, and includes a truer having an edge of the same angle as a slanted surface of the groove of the fine-grinding wheel and a cross-sectional shape corresponding to a cross-sectional shape of the groove. The present invention uses the truing tool to easily process the groove of the grinding wheel for fine-grinding the wafer edge.
B24B 53/07 - Devices or means for dressing or conditioning abrasive surfaces of profiled abrasive wheels by means of forming tools having a shape complementary to that to be produced, e.g. blocks, profile rolls
B24B 9/06 - Machines or devices designed for grinding edges or bevels on work or for removing burrsAccessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
2.
2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor
The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.
C30B 15/14 - Heating of the melt or the crystallised materials
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B 21/06 - Unidirectional solidification of eutectic materials by pulling from a melt
C30B 27/02 - Single-crystal growth under a protective fluid by pulling from a melt
C30B 28/10 - Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
3.
CASSETTE JIG FOR WAFER CLEANING APPARATUS AND CASSETTE ASSEMBLY HAVING THE SAME
A cassette jig for a wafer cleaning apparatus is provided, comprising a jig body having an inner space designed to receive a first wafer therein; and a guide member mounted in the jig body and operative to guide a cassette to be installed in the jig body, the cassette having an inner space designed to receive a second wafer of a relatively smaller diameter than the first wafer therein.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
4.
Wafer unloading system and wafer processing equipment including the same
A wafer unloading system and wafer processing equipment (system) including the same are disclosed. The wafer unloading system includes a fluid supply tube for supplying a fluid, a nozzle for injecting the supplied fluid, and an injection hole defined in a plate to allow the injected fluid to reach a space between a polishing pad and a wafer.
B24B 7/17 - Single-purpose machines or devices for grinding end faces, e.g. of gauges, rollers, nuts or piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.
A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.
A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.
The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.
An EPI wafer according to the present invention includes a single crystal substrate and an EPI layer grown on the single crystal substrate, wherein the single crystal substrate is doped with nitrogen, and crystal defects existing in the single crystal substrate have an octahedral or overlapping kite-shaped morphology.
A method of manufacturing LED display is provided. The method provides a sacrificial substrate on which RGB LED device layers are formed, respectively. The method etches and patterns the LED device layer to manufacture RGB LED devices, respectively. The method removes the sacrificial substrate in a lower side of the LED device. The method contacts a stamping processor to the RGB LED devices to separate the RGB LED devices from the sacrificial substrate. The method transfers the LED device, which is attached to the stamping processor, to a receiving substrate.
A double side polishing apparatus comprises an upper polishing plate and a lower polishing plate for polishing both sides of a wafer; a plurality of carriers, each including a center plate and a circumferential plate, the center plate having a mounting hole where the wafer is mounted, the circumferential plate having a fitting hole where the center plate is fitted and a gear part formed along the outer periphery thereof, the center of the mounting hole being eccentric from the center of the center plate, the center of the fitting hole being eccentric from the center of the circumferential plate; and a sun gear and an internal gear engaged with the gear part to transmit a rotational force to the plurality of carriers, wherein a fitting direction of a center plate into a fitting hole is adjustable for at least two carriers among the plurality of carriers.
B24B 7/17 - Single-purpose machines or devices for grinding end faces, e.g. of gauges, rollers, nuts or piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
B24B 41/06 - Work supports, e.g. adjustable steadies
12.
DOUBLE SIDE POLISHING APPARATUS AND CARRIER THEREFOR
A double side polishing apparatus comprises an upper polishing plate and a lower polishing plate for polishing both sides of a wafer; a plurality of carriers, each including a center plate and a circumferential plate, the center plate having a mounting hole where the wafer is mounted, the circumferential plate having a fitting hole where the center plate is fitted and a gear part formed along the outer periphery thereof, the center of the mounting hole being eccentric from the center of the center plate, the center of the fitting hole being eccentric from the center of the circumferential plate; and a sun gear and an internal gear engaged with the gear part to transmit a rotational force to the plurality of carriers, wherein a fitting direction of a center plate into a fitting hole is adjustable for at least two carriers among the plurality of carriers.
Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.
Disclosed are an apparatus and a method for wet-processing (such as cleaning and etching) an object such as a semiconductor wafer or substrate, and a fluid diffusion plate and a barrel used therein. The wet-processing apparatus according to the invention comprises: a treatment bath that contains and treats objects; a rod-shaped object support pipe that is installed inside the treatment bath and is able to rotate, wherein plural slots are formed on the surface of the support pipe and support the object by allowing the object to be vertically positioned at the bottom surface of the treatment bath; and a rotation unit that is connected to and rotates the support pipe to rotate the object. The support pipe comprises: a treatment fluid spray hole for spraying the treatment fluid on the object; and a treatment fluid flow path for supplying the treatment fluid to the spray hole. The invention removes a dead zone inside the treatment bath and enables the uniform and smooth flow of the treatment fluid. Therefore, treatment efficiency and uniformity can be improved.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
15.
SEED CHUCK FOR A SINGLE CRYSTAL SILICON INGOT GROWING APPARATUS
The present invention relates to a seed chuck for a single crystal silicon ingot growing apparatus. The seed chuck of the present invention is arranged in the single crystal silicon ingot growing apparatus based on the Czochralski process to hold a seed for growing single crystal silicon ingots. Said seed chuck comprises a seed chuck body having an upper portion with a rope joint part coupled with an ascending or descending rope, and a lower portion with a seed holding portion for accommodating and holding the seed. The seed chuck body has a hole for inserting a cooling pipe which has a vacuumed interior filled with a predetermined amount of refrigerant, and both ends of which are sealed. The cooling pipe is fitted into the insertion hole. The present invention employs a seed chuck with a cooling means to lower the temperature in a seed neck area during a body growing process and increase tensile strength. Whereby, large diameter single crystal silicon ingots can be safely grown.
A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.
Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
18.
2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor
The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.
C30B 15/14 - Heating of the melt or the crystallised materials
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B 21/06 - Unidirectional solidification of eutectic materials by pulling from a melt
C30B 27/02 - Single-crystal growth under a protective fluid by pulling from a melt
C30B 28/10 - Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
19.
Grinding wheel truing tool and manufacturing method thereof, and truing apparatus, method for manufacturing grinding wheel and wafer edge grinding apparatus using the same
The present invention relates to a grinding wheel truing tool, its manufacturing method, and a truing apparatus, a method for manufacturing a grinding wheel and a wafer edge grinding apparatus using the same. The grinding wheel truing tool of the present invention compensates a groove of a fine-grinding wheel for fine-grinding a wafer edge, and includes a truer having an edge of the same angle as a slanted surface of the groove of the fine-grinding wheel and a cross-sectional shape corresponding to a cross-sectional shape of the groove. The present invention uses the truing tool to easily process the groove of the grinding wheel for fine-grinding the wafer edge.
The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.
The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.
Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.
The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B 21/06 - Unidirectional solidification of eutectic materials by pulling from a melt
C30B 27/02 - Single-crystal growth under a protective fluid by pulling from a melt
C30B 28/10 - Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
C30B 17/00 - Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
C30B 21/02 - Unidirectional solidification of eutectic materials by normal casting or gradient freezing
C30B 28/06 - Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
The present invention relates to a box cleaner including an ultrasonic cleaning bath having a receiving space to be filled with DIW and an ultrasonic wave generator arranged at a bottom thereof; a tray for loading a wafer shipping box thereon; a lift for providing a driving force to put the tray into the ultrasonic cleaning bath and take the tray out of the ultrasonic cleaning bath; and a drying system for drying the cleaned shipping box, wherein a gas sprayer is installed in the ultrasonic cleaning bath for spraying gas into the cleaned shipping box to push the DIW out of the shipping box, thereby draining the DIW.
4) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.
Provided is a method of manufacturing a strained silicon-on-insulator (SSOI) substrate that can manufacture an SSOI substrate by separating a bonded substrate using a low temperature heat treatment. The manufacturing method includes: providing a substrate; growing silicon germanium (SiGe) on the substrate to thereby form a SiGe layer; growing silicon (Si) with a lattice constant less than a lattice constant of SiGe on the SiGe layer to thereby form a transformed Si layer; and implanting ions on the surface of the transformed Si layer, wherein, while growing of the SiGe layer, the SiGe layer is doped with impurity at a depth the ions are to be implanted. Accordingly, it is possible to manufacture a substrate with an excellent surface micro-roughness. Since a bonded substrate can be separated using low temperature heat treatment by interaction between implanted ions and impurity, it is possible to reduce manufacturing costs and facilitate an apparatus.
A wafer support pin has a front end contacted with a wafer such that the front end is flat or rounded. Thus, gravitational stress is minimized during annealing the wafer, thereby minimizing slip dislocation. This wafer support pin is suitably used for annealing of a wafer, particularly high temperature rapid thermal annealing of a large-diameter wafer.
A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.
The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
30.
Method of identifying crystal defect region in monocrystalline silicon using metal contamination and heat treatment
2. The contaminated sample is heat-treated. The contaminated side or the opposite side of the heat-treated sample is observed to identify a crystal defect region. The crystal defect region can be analyzed accurately, easily and quickly without the use of an additional check device, without depending on the concentration of oxygen in the monocrystalline silicon.
The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.
A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.
B24B 1/00 - Processes of grinding or polishingUse of auxiliary equipment in connection with such processes
B28D 1/06 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by sawing with reciprocating saw blades
33.
Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
In a method for producing a high quality silicon single crystal by the Czochralski method, a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part and a circumferential part, and the temperature gradient of the central part and the temperature gradient of the circumferential part are separately controlled. When a silicon melt located at a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part melt and a circumferential part melt, the method controls the temperature gradient of the central part melt by directly controlling the temperature distribution of a melt and indirectly controls the temperature gradient of the circumferential part melt by controlling the temperature gradient of the single crystal, thereby effectively controlling the overall temperature distribution of the melt, thus producing a high quality single crystal ingot free of defects with a high growth velocity.
The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
35.
Silicon single crystal ingot and wafer, growing apparatus and method thereof
A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
36.
Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot
The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.
The inventive quality evaluation method for a single crystal ingot generally includes a step of determining cropping and sampling positions and a step of evaluating a sample. The step of determining cropping and sampling positions includes: (a) inputting basic information on the decision of cropping, sampling and prime positions according to equipments and products, (b) predetermining the cropping, sampling and prime positions according to the basic information, (c) monitoring a growing process of a growing ingot and analyzing/storing X factors related with the growing process of the growing ingot, and (d) determining the cropping and sampling positions based on the X factors related with the growing process.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
38.
Method of manufacturing gallium nitride semiconductor
The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
39.
Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
Disclosed is a metod of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(ΔTmax−ΔTmin)/ΔTmin}×100≦10, wherein ΔTmax is a maximum axial temperature gradient of the silicon melt and ΔTmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
40.
High quality single crystal and method of growing the same
Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direction of the single crystal from the interface of the single crystal and the melt to the bottom of the crucible. The increasing temperature of the melt is kept to preferably have a greater temperature gradient than the decreasing temperature thereof. Preferably, the axis is set to pass through the center of the single crystal. Preferably, the convection of the inner region of the melt is made smaller than that of the outer region thereof.
patents
