A driver for a shared bus, such as a LIN bus, having a supply node (Vbat), a bus node (LIN), a transmit data input node (TX) and a receive data output node (RX), said driver comprising: a pull-up circuitry between the supply node and the bus node, driver circuitry (100) having a control input connected to the transmit data input node, feedback circuitry (200) configured to provide feedback from the shared bus to the control input of the driver circuitry; said feedback circuitry comprising copy circuitry (210) configured to obtain at least one copy signal representative for a signal on the bus node, filter circuitry (220) configured to low-pass filter the at least one copy signal, derivative circuitry (230) configured to obtain at least one derivative signal representative for the speed at which the signal on the bus node varies.
An electrostatic discharge (ESD) protection device including a stack of ESD clamps, a trigger circuit, and a transistor. The trigger circuit may respond to an ESD event by conducting current, which may cause the transistor to turn on. A combination of the trigger circuit conducting current and the transistor turning on may trigger the ESD clamps into a conducting state to shunt current from a first node to a second node.
A driver for a shared bus, such as a LIN bus, having a supply node (Vbat), a bus node (LIN), a transmit data input node (TX) and a receive data output node (RX), said driver comprising:a pull-up circuitry between the supply node and the bus node,driver circuitry (100) having a control input connected to the transmit data input node,feedback circuitry (200) configured to provide feedback from the shared bus to the control input of the driver circuitry;said feedback circuitry comprising copy circuitry (210) configured to obtain at least one copy signal representative for a signal on the bus node, filter circuitry (220) configured to low-pass filter the at least one copy signal, derivative circuitry (230) configured to obtain at least one derivative signal representative for the speed at which the signal on the bus node varies.
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An electrostatic discharge (ESD) protection device with a high holding voltage is disclosed including at least an ESD clamp coupled to a holding voltage tuning circuit. The ESD clamp may be coupled to the holding voltage tuning circuit through a connection circuit such as a diode. The ESD clamp may be implemented by a first silicon controlled rectifier (SCR) and the holding voltage tuning circuit may be implemented as a second SCR.
H02H 9/00 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
7.
Semiconductor device for electrostatic discharge protection
Disclosed is an electrostatic discharge (ESD) protection circuit. The ESD protection circuit may include a silicon controller rectifier (SCR) which may be triggered via at least one of its first trigger gate or second trigger gate. The ESD protection circuit may further include a highly doped region coupled to either the anode or cathode of the SCR, wherein the highly doped region may provide additional carriers to facilitate triggering of the SCR during an ESD event, whereby the SCR may be triggered more quickly.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/74 - Thyristor-type devices, e.g. having four-zone regenerative action
An electrostatic discharge (ESD) protection device is disclosed including at least an NPN transistor and a PNP transistor coupled between a first node and a second node, wherein the ESD protection device may be configured to sink current from the first node to the second node in response to an ESD event. The transistors may be coupled such that a collector of the NPN may be coupled to the first node. A collector of the PNP may be coupled to the second node. A base of the NPN may be coupled to the emitter of the PNP. An emitter of the NPN may be coupled to a base of the PNP.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
An electrostatic discharge (ESD) protection device is disclosed including at least an NPN transistor and a PNP transistor coupled between a first node and a second node, wherein the ESD protection device may be configured to sink current from the first node to the second node in response to an ESD event. The transistors may be coupled such that a collector of the NPN may be coupled to the first node. A collector of the PNP may be coupled to the second node. A base of the NPN may be coupled to the emitter of the PNP. An emitter of the NPN may be coupled to a base of the PNP.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/60 - Protection against electrostatic charges or discharges, e.g. Faraday shields
H01L 29/87 - Thyristor diodes, e.g. Shockley diodes, break-over diodes
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
10.
Semiconductor device for electrostatic discharge protection
Disclosed is an electrostatic discharge (ESD) protection circuit. The ESD protection circuit may include a silicon controller rectifier (SCR) which may be triggered via at least one of its first trigger gate or second trigger gate. The ESD protection circuit may further include a highly doped region coupled to either the anode or cathode of the SCR, wherein the highly doped region may provide additional carriers to facilitate triggering of the SCR during an ESD event, whereby the SCR may be triggered more quickly.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/74 - Thyristor-type devices, e.g. having four-zone regenerative action
An electrostatic discharge (ESD) protection device with a high holding voltage is disclosed including at least an ESD clamp coupled to a holding voltage tuning circuit. The ESD clamp may be coupled to the holding voltage tuning circuit through a connection circuit such as a diode. The ESD clamp may be implemented by a first silicon controlled rectifier (SCR) and the holding voltage tuning circuit may be implemented as a second SCR.
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
An electrostatic discharge (ESD) protection device with a high holding voltage is disclosed including at least an ESD clamp coupled to a holding voltage tuning circuit. The ESD clamp may be coupled to the holding voltage tuning circuit through a connection device such as a diode. The ESD clamp may be implemented by a first silicon controlled rectifier (SCR) and the holding voltage tuning circuit may be implemented as a second SCR.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
13.
High holding voltage electrostatic discharge protection device
A high holding voltage (HV) electrostatic discharge (ESD) protection circuit comprises a silicon controlled rectifier (SCR) device and compensation regions located within the length between the anode and cathode (LAC) of the SCR device which increase the holding voltage of the SCR device. The compensation regions may introduce negative feedback mechanisms into the SCR device which may influence the loop gain of the SCR and cause it to reach regenerative feedback at a higher holding voltage.
H01L 23/60 - Protection against electrostatic charges or discharges, e.g. Faraday shields
H01L 29/87 - Thyristor diodes, e.g. Shockley diodes, break-over diodes
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
14.
Electrostatic discharge protection for high voltage domains
An electrostatic discharge (ESD) protection device is disclosed. The ESD protection circuit is configured to operate in high voltage domains. The ESD protection device may further include stacked NMOS or PMOS devices. The gates of the MOS devices may be driven by respective inverters. The inverters may be coupled to a voltage divider and may be triggered by respective trigger circuits. Power nodes of the inverters may be connected such that devices in the ESD protection circuit are exposed to voltages that are within their maximum voltage rating.
H02H 1/00 - Details of emergency protective circuit arrangements
H02H 1/04 - Arrangements for preventing response to transient abnormal conditions, e.g. to lightning
H02H 3/22 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage of short duration, e.g. lightning
H02H 9/06 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using spark-gap arresters
15.
SEMICONDUCTOR DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION HAVING REGIONS OF ALTERNATING CONDUCTIVITY TYPES
A protection device including at least an NPN transistor (1203) and a PNP transistor (1204) coupled between a first node (1201) and a second node (1202) so as to sink current from the first node to the second node in response to an electrostatic discharge (ESD) event. The transistors may be coupled such that the N collector (1222) of the NPN transistor is coupled to the first node, the P base (1224) of the NPN transistor is coupled to the P emitter (1224) of the PNP transistor, the N emitter (1225) of the NPN transistor is coupled to the N base (1225) of the PNP transistor and the P collector (1223) of the PNP transistor is coupled to the second node, whereby a device having an NPNP structure may be achieved.
An electrostatic discharge (ESD) protection device is disclosed including at least an NPN transistor and a PNP transistor coupled between a first node and a second node, wherein the ESD protection device may be configured to sink current from the first node to the second node in response to an ESD event. The transistors may be coupled such that a collector of the NPN may be coupled to the first node. A collector of the PNP may be coupled to the second node. A base of the NPN may be coupled to the emitter of the PNP. An emitter of the NPN may be coupled to a base of the PNP.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/60 - Protection against electrostatic charges or discharges, e.g. Faraday shields
H01L 29/87 - Thyristor diodes, e.g. Shockley diodes, break-over diodes
17.
High holding voltage, mixed-voltage domain electrostatic discharge clamp
An electrostatic discharge (ESD) protection circuit is disclosed including at least a clamping device, a switching device, and a voltage limiter. The ESD protection circuit may include devices of different voltage domains. The switching device may be in series with the clamping device to block at least a portion of a voltage from dropping across the clamping device. The switching device may sustain higher maximum operating voltages than the clamping device.
H02H 3/22 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage of short duration, e.g. lightning
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
18.
A HIGH HOLDING VOLTAGE, MIXED-VOLTAGE DOMAIN ELECTROSTATIC DISCHARGE CLAMP
An electrostatic discharge (ESD) protection circuit is disclosed including at least a clamping device, a switching device, and a voltage limiter. The ESD protection circuit may include devices of different voltage domains. The switching device may be in series with the clamping device to block at least a portion of a voltage from dropping across the clamping device. The switching device may sustain higher maximum operating voltages than the clamping device.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
The present invention provides an ESD protection device having at least one diode in a well of first conductivity type formed in a substrate of second conductivity type. The circuit further includes a guard-band of the first conductivity surrounding at least a portion of the diode, thus forming an NPN transistor between the diode cathode, the substrate and the guard-band.
H02H 3/22 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage of short duration, e.g. lightning
A high holding voltage (HVO electrostatic discharge (ESD) protection circuit comprises a silicon controlled rectifier (SCE) device and compensation regions located within the length between the anode and cathode (LAC) of the SCR device which increase the holding voltage of the SCR device. The compensation regions may introduce negative feedback mechanisms into the SCR device which may influence the loop gain of the SCR and cause it to reach regenerative feedback at a higher holding voltage.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
21.
High holding voltage electrostatic discharge (ESD) device
A high holding voltage (HV) electrostatic discharge (ESD) protection circuit comprises a silicon controlled rectifier (SCR) device and compensation regions located within the length between the anode and cathode (LAC) of the SCR device which increase the holding voltage of the SCR device. The compensation regions may introduce negative feedback mechanisms into the SCR device which may influence the loop gain of the SCR and cause it to reach regenerative feedback at a higher holding voltage.
An electrostatic discharge (ESD) protection circuit for protecting an integrated circuit (IC) having a first voltage potential, a first power supply potential and a second power supply potential. The ESD circuit includes a first NPN bipolar transistor having a first N-doped junction, a second N-doped junction and a third P-doped base junction. The first N-doped junction is coupled to the first voltage potential and the second N-doped junction is coupled to the first power supply potential. The ESD circuit also includes a first PNP bipolar transistor having a first P-doped junction, a second P-doped junction and a third N-doped base junction. The first P-doped junction is coupled to the first voltage potential and the second P-doped junction is coupled to the second power supply potential. The third P-doped base junction of the first NPN bipolar transistor is coupled to the third N-doped base junction of the first PNP bipolar transistor.
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Advertising; business management; business administration; office functions; management and administrating technology licensing and technology transfer services, namely the licensing and transfer of intellectual property relating to electrostatic discharge (ESD) protection of integrated circuits. Scientific and technological services and research and design relating thereto; industrial analysis and research services. Technology licensing and technology transfer services; namely arranging, granting, (advising) and exploiting licenses and services relating to licenses.
45 - Legal and security services; personal services for individuals.
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Licensing of intellectual property for others in the field of integrated circuits; licensing of intellectual property for others in the field of integrated circuits and electrostatic discharge (ESD) protection devices
25.
Electrostatic discharge device with adjustable trigger voltage
An improved ESD protection circuit having an ESD device and a triggering device to provide a continuously adjustable trigger voltage. This can be accomplished by various techniques such as placing a selected number of triggering elements in series, modifying the gate control circuitry and varying the size of the triggering elements.
H02H 9/00 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H02H 3/00 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection
An ESD protection circuit including an SCR having at least a PNP transistor and at least a NPN transistor such that said PNP transistor is coupled to an anode and the NPN transistor is coupled to a cathode. The circuit also includes a first resistor coupled between the anode and the base of the pnp transistor and a second resistor coupled between the cathode and the base of the npn transistor. A parasitic distributed bipolar transistor is formed between said first and second transistor to control triggering of the SCR.
An ESD protection circuit including an SCR having at least one PNP transistor and at least one NPN transistor such that at least one of the PNP transistor and the NPN transistor having an additional second collector. The circuit further including at least one control circuit coupled to the at least one second collector to control holding voltage of the SCR.
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Product research and development; contract design and testing for new product development; product safety testing in the fields of electronics, computer software and integrated circuits; testing, analysis and evaluation of materials and products for electrostatic discharge; product development and engineering services for others; product development consultation; research and development of computer software. Licensing of computer software and intellectual property.
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Product research and development; contract design and testing for new product development; product safety testing in the fields of electronics, computer software and integrated circuits; testing, analysis and evaluation of materials and products for electrostatic discharge; product development and engineering services for others; product development consultation; research and development of computer software. Licensing of computer software and intellectual property.
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Product research and development; contract design and testing for new product development; product safety testing in the fields of electronics, computer software and integrated circuits; testing, analysis and evaluation of materials and products for electrostatic discharge; product development and engineering services for others; product development consultation; research and development of computer software Licensing of computer software and intellectual property
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Product research and development; contract design and testing for new product development; product safety testing in the fields of electronics, computer software and integrated circuits; testing, analysis and evaluation of materials and products for electrostatic discharge; product development and engineering services for others; product development consultation; research and development of computer software Licensing of computer software and intellectual property
The present invention provides an electrostatic discharge (ESD) protection circuit with a silicon controlled rectifier (SCR) having a plurality of SCR fingers (SCRs) with the advantages to couple the different fingers or SCRs to decrease the multi-triggering problem and to increase the ESD-performance of the circuit. Additionally, a boost circuit can be introduced or additionally multiple SCRs can be coupled inherent through a common base.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
The present invention provides an ESD protection device having at least one diode in a well of a first conductivity type formed in a substrate of a second conductivity type. The circuit further includes a guard-band of the first conductivity surrounding at least a portion of the diode, thus forming an NPN transistor between the diode cathode, the substrate and the guard-band.
H02H 3/22 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage of short duration, e.g. lightning
34.
Electrostatic discharge protection structures with reduced latch-up risks
The present invention provides an ESD protection circuitry in a semiconductor integrated circuit (IC) having protected circuitry to prevent false triggering of the ESD clamp. The circuitry includes an SCR as an ESD clamp having an anode adapted for coupling to a first voltage source, and a cathode adapted for coupling to a second voltage source. The circuitry also includes at least one noise current buffer (NCB) coupled between at least one of a first trigger tap of the SCR and the first voltage source such that the first trigger tap of the SCR is coupled to a power supply.
H02H 9/00 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
H02H 3/20 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H02H 3/22 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage of short duration, e.g. lightning
H02H 1/00 - Details of emergency protective circuit arrangements
H02H 1/04 - Arrangements for preventing response to transient abnormal conditions, e.g. to lightning
H02H 9/06 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using spark-gap arresters
The present invention provides a MOS transistor device for providing ESD protection including at least one interleaved finger having a source, drain and gate region formed over a channel region disposed between the source and the drain regions. The transistor device further includes at least one isolation gate formed in at least one of the interleaved fingers. The device can further include a bulk connection coupled to at least one of the source, drain and gate regions via through at least one of diode, MOS, resistor, capacitor inductor, short, etc. The bulk connection is preferably isolated through the isolation gate.
H01L 27/10 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
H01L 29/94 - Metal-insulator-semiconductors, e.g. MOS
H01L 31/062 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
H01L 31/113 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor
H01L 31/119 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
The present invention provides a semiconductor structure device having a first and a second semiconductor devices with a silicon controlled rectifier (SCR) formed between the two devices with advantages to couple the devices to provide more design flexibility and enhanced triggering in order to improve the ESD performance of the device.
An electronic device having an LV-well element trigger structure that reduces the effective snapback trigger voltage in MOS drivers or ESD protection devices. A reduced triggering voltage facilitates multi-finger turn-on and thus uniform current flow and/or helps to avoid competitive triggering issues.
A method and apparatus for providing ESD protection. An ESD clamp is connected across the terminals to be protected circuit. The clamp is coupled to a current detector that activates the clamp when current from an ESD event exceeds a predefined limit.
H02H 3/22 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage of short duration, e.g. lightning
H02H 9/00 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
39.
Method and apparatus for protecting a gate oxide using source/bulk pumping
A method and apparatus for providing ESD event protection for a circuit using a source or bulk pump to increase the bulk and/or source potential level during an ESD event. The apparatus comprises a protection circuit that, in response to an ESD event, limits the voltage formed between two terminals of a transistor by adjusting a potential level on the second terminal.
H02H 9/00 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
H02H 3/22 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage of short duration, e.g. lightning
H02H 1/00 - Details of emergency protective circuit arrangements
H02H 1/04 - Arrangements for preventing response to transient abnormal conditions, e.g. to lightning
H02H 9/06 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using spark-gap arresters
