Goods & Services

Semiconductor manufacturing machines; semiconductor manufacturing systems comprised of semiconductor wafer processing equipment and machines for manufacturing semiconductors; ion implantation machines used in manufacturing semiconductors

Abstract

A method includes: recording time-series data in which a beam condition including an ion species, energy, and a beam current of an ion beam that is transported along a beamline in an ion implanter and a neutron dose rate that is measured at a predetermined measurement position in the ion implanter are associated with each other in a recording device; transporting a high-energy ion beam along the beamline; acquiring a measured value of the neutron dose rate that is measured at the predetermined measurement position when transporting the high-energy ion beam; calculating an estimated value of the neutron dose rate that is estimated at the predetermined measurement position when transporting the high-energy ion beam, by using the time-series data and the beam condition of the high-energy ion beam; and comparing the measured value with the estimated value.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implantation method includes: acquiring a measured value of a neutron dose rate measured at a predetermined position in an ion implanter when a first ion beam containing a first ion species is transported along a beamline; determining whether the measured value exceeds a predetermined threshold; transporting a second ion beam containing a second ion species having a larger mass number than the first ion species along the beamline when the measured value exceeds the predetermined threshold; and irradiating a wafer with the transported first ion beam after transport of the second ion beam.

IPC Classes  ?

• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/32 - Gas-filled discharge tubes

Abstract

A substrate processing apparatus includes: a vacuum processing chamber; a substrate holder provided in the vacuum processing chamber and holding the substrate; a sealing forming a closed space between the substrate held by the substrate holder and the substrate holder; a gas path communicating with the closed space; a gas supply path supplying a gas into the gas path; a gas exhaust path exhausting the gas from the gas path; a first valve capable of opening and closing a space between the gas path and the gas supply path; and a second valve capable of opening and closing a space between the gas path and the gas exhaust path.

IPC Classes  ?

• H01J 37/32 - Gas-filled discharge tubes
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

An ion implanter includes a high energy multi-stage linear acceleration unit including a plurality of linear acceleration units, wherein each of the linear acceleration units includes high frequency accelerators respectively in a plurality of stages; and a control device controlling an operation of the high energy multi-stage linear acceleration unit in accordance with a data set defining a voltage amplitude, a frequency, and a phase of the high frequency accelerator in each of the plurality of stages.

IPC Classes  ?

• H01J 37/302 - Controlling tubes by external information, e.g. programme control
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

An ion generation device includes an arc chamber including an internal space and including a front slit for extracting an ion beam from plasma generated in the internal space, a magnetic field generator that generates a magnetic field applied in an axial direction in the internal space, and a first cathode configured to supply a thermoelectron into the internal space. The first cathode includes a first cathode cap, a first heat source, and a first thermal shield including a first extension portion. A first tip portion, and a first tip opening, and a first opening width of the first tip opening in the radial direction is smaller than a maximum width of the first cathode cap in the radial direction.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Goods & Services

Semiconductor manufacturing machines; semiconductor manufacturing systems comprised of semiconductor wafer processing equipment and machines for manufacturing semiconductors; ion implantation equipment used in manufacturing semiconductors

Goods & Services

Semiconductor manufacturing machines; semiconductor manufacturing systems comprised of semiconductor wafer processing equipment and machines for manufacturing semiconductors; ion implantation equipment used in manufacturing semiconductors

Goods & Services

Semiconductor manufacturing machines; semiconductor manufacturing systems comprised of semiconductor wafer processing equipment and machines for manufacturing semiconductors; ion implantation equipment used in manufacturing semiconductors

Abstract

This ion implantation device executes the following steps (a) to (d): (a) adjust the tilt angle of an object-to-be-processed holding device to a first tilt angle by a tilt angle adjustment device on the basis of information about a first implantation angle of an ion beam with respect to the object to be processed, the first implantation angle being predetermined for the first region of the object to be processed; (b) irradiate the first region of the object-to-be-processed held at the first tilt angle by the object-to-be-processed holding device with the ion beam; (c) adjust the tilt angle of the object-to-be-processed holding device to a second tilt angle by the tilt angle adjustment device on the basis of information about a second implantation angle of the ion beam with respect to the object to be processed, the second implantation angle being predetermined for the second region of the object to be processed; (d) irradiate the second region of the object-to-be-processed held at the second tilt angle by the object-to-be-processed holding device with the ion beam.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

This ion injection device comprises: a first imaging device that captures an image of a wafer which is to be subjected to ion injection processing; a processing chamber that provides a space for ion injection processing of the wafer and includes a wafer retention device which is configured to be able to retain the wafer within the processing chamber; a wafer conveyance device that conveys the wafer to the processing chamber and places the wafer in the wafer retention device; one or more processors; and one or more memories in which is stored a program that can be executed by the one or more processors. The program includes the following steps (a) through (c): (a) the first imaging device captures an image of a wafer; (b) first disposition information for the wafer is acquired on the basis of the captured image; and (c) the wafer conveyance device conveys the wafer to the processing chamber with the first disposition information being associated therewith, and places the wafer in the wafer retention device.

IPC Classes  ?

• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

In the present invention, an ion injecting device 10 comprises an ion source 20 that generates ions, an extraction unit 22 that extracts ions from the ion source 20 and generates an ion beam, a beam scanning unit 28 that is configured to generate a scan beam SB by scanning the ion beam back and forth in a scanning direction other than the horizontal direction, and holding devices 40, 42 configured to be able to hold workpieces W1, W2, the holding devices 40, 42 being configured to move the workpieces W1, W2 held by the holding devices 40, 42 back and forth in a direction crossing a scanning beam SB.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

An ion implantation device (10) comprises: a beam generating device (12) that generates an ion beam for irradiation of objects (W1, W2) to be processed, and that performs irradiation with the ion beam over an irradiation range, the size of which in the vertical direction is greater than the size of processing target surfaces of the objects to be processed; a first holding device (40) that can hold the first object (W1) to be processed and that moves the first object (W1) to be processed back and forth in the horizontal direction such that the first object (W1) to be processed held by the first holding device (40) moves across the irradiation range; and a second holding device (42) that can hold the second object (W2) to be processed and that moves the second object (W2) to be processed back and forth in the horizontal direction such that the second object (W2) to be processed held by the second holding device (42) moves across the irradiation range.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

An ion generator includes an arc chamber defining a plasma generation space, and a cathode which emits thermoelectrons toward the plasma generation space. The arc chamber includes a box-shaped main body having an opening, and a slit member mounted to cover the opening and provided with a front slit. An inner surface of the main body is exposed to the plasma generation space made of a refractory metal material. The slit member includes an inner member made of graphite and an outer member made of another refractory metal material. The outer member includes an outer surface exposed to an outside of the arc chamber. The inner member includes an inner surface exposed to the plasma generation space, and an opening portion which forms the front slit extending from the inner surface of the inner member to the outer surface of the outer member.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01J 37/063 - Geometrical arrangement of electrodes for beam-forming
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/32 - Gas-filled discharge tubes

Abstract

An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Goods & Services

Semiconductor manufacturing machines; semiconductor manufacturing systems comprised of semiconductor wafer processing equipment and machines for manufacturing semiconductors; ion implantation machines used in manufacturing semiconductors

Goods & Services

Semiconductor manufacturing machines; semiconductor manufacturing systems comprised of semiconductor wafer processing equipment and machines for manufacturing semiconductors; ion implantation machines used in manufacturing semiconductors

Goods & Services

Semiconductor manufacturing machines; semiconductor manufacturing systems comprised of semiconductor wafer processing equipment and machines for manufacturing semiconductors; ion implantation machines used in manufacturing semiconductors

Abstract

This ion implantation method comprises: acquiring a measured value of a neutron dose rate measured at a predetermined position in an ion implantation apparatus when a first ion beam containing a high-energy first ion species is transported along a beam line in the ion implantation apparatus; determining whether the measured value exceeds a predetermined threshold value; transporting, along the beam line, a second ion beam containing a second ion species having a mass number larger than that of the first ion species, when the measured value exceeds the predetermined threshold value; and irradiating the wafer with the first ion beam transported along the beam line after the second ion beam has been transported.

IPC Classes  ?

• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

A method of the present disclosure comprises: recording, in a recording device, time-series data in which beam conditions including an ion species, energy, and beam current of an ion beam that is transported along a beam line in an ion injection device are associated with a neutron dose rate that is measured at a predetermined measurement position in the ion injection device; transporting a high energy ion beam along the beam line; acquiring a measurement value of the neutron dose rate measured at the predetermined measurement position during transport of the high energy ion beam; using the time-series data and the beam conditions of the high energy ion beam to compute an estimate value of the neutron dose rate estimated at the predetermined measurement position during the transport of the high energy ion beam; and comparing the measurement value and the estimate value.

IPC Classes  ?

• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• G01N 23/09 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and measuring the absorption the radiation being neutrons
• G01T 3/00 - Measuring neutron radiation
• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H05H 9/00 - Linear accelerators

Abstract

A substrate processing device 10 comprising: a vacuum processing chamber 16; a substrate holder 50 that holds a substrate S within the vacuum processing chamber 16; sealing that forms a closed space 82 between the substrate holder 50 and the substrate S held by the substrate holder 50; a gas path 84 that communicates with the space 82; a gas supply path 86 that supplies a gas into the gas path 84; a gas discharge path 88 that discharges the gas from within the gas path 84; a first valve 90 that can open and close between the gas path 84 and the gas supply path 86; and a second valve 92 that can open and close between the gas path 84 and the gas discharge path 88.

IPC Classes  ?

• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

Abstract

Provided is an ion implanter or the like capable of shortening a replacement time of workpieces. An ion implantation method includes (a) deflecting an ion beam by at least one of an electric field and a magnetic field in an irradiation-disabled direction in which a wafer is incapable of being irradiated with the ion beam after a first wafer is irradiated with the ion beam directed in an irradiation-enabled direction in which the wafer is capable of being irradiated with the ion beam; (b) moving the first wafer from an ion implantation position, subsequently to the step (a); (e) disposing a second wafer different from the first wafer at the ion implantation position, subsequently to the step (b); and (f) returning the ion beam from the irradiation-disabled direction to the irradiation-enabled direction, subsequently to the step (e).

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals

Abstract

The ion implantation method includes (a) moving a wafer adjusted to have a first implantation angle with respect to an ion beam from a beam irradiation range toward a beam non-irradiation range; (b) starting a change of the wafer from the first implantation angle to a second implantation angle while the wafer is moved within the beam non-irradiation range after the wafer having the first implantation angle is moved from the beam irradiation range; (c-1) reversing a movement direction of the wafer at an end of the beam non-irradiation range and moving the wafer toward the beam irradiation range; and (c-2) completing the change of the wafer from the first implantation angle to the second implantation angle while the wafer is moved within the beam non-irradiation range before the wafer is returned to the beam irradiation range.

IPC Classes  ?

• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement

Abstract

An ion implantation method includes generating a first scan beam, based on a first scan signal, measuring a beam current of the first scan beam by using a beam measurement device at a plurality of measurement positions, calculating a beam current matrix, based on a time waveform of the beam current measured by the beam measurement device and a time waveform of the scan command values determined in the first scan signal, calculating a first beam current density distribution of the first scan beam in a predetermined direction by performing time integration on the measured beam current, correcting a value of each component of the beam current matrix, based on the first beam current density distribution, and generating a second scan signal for realizing a target beam current density distribution in the predetermined direction, based on the corrected beam current matrix.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals

Abstract

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure a neutron ray from a neutron ray source which is generated in the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a plurality of measurement values measured by the plurality of neutron ray measuring instruments.

IPC Classes  ?

• H01J 37/244 - DetectorsAssociated components or circuits therefor
• G01T 3/00 - Measuring neutron radiation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion generation apparatus 10 comprises: an arc chamber 50; a magnetic field generator 52 that generates a magnetic field B to be applied in the axial direction in an internal space S of the arc chamber 50; a first cathode cap 72 that protrudes toward the inside of the arc chamber 50 in the axial direction and emits thermal electrons toward the internal space S; and a first thermal shield 76 that includes a first extension portion which axially extends in a tubular shape on the radially outer side of the first cathode cap 72 and which is adjacent to the first cathode cap 72 with a gap interposed therebetween in the radial direction perpendicular to the axial direction, a first tip portion that protrudes toward the inside of the arc chamber, and a first tip opening that opens in the axial direction in the first tip portion. The first tip opening has a first opening width in the radial direction smaller than the maximum width of the first cathode cap 72 in the radial direction.

IPC Classes  ?

• H01J 27/14 - Other arc discharge ion sources using an applied magnetic field
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure beam currents of the ion beam, and a control device. The control device acquires a data set including the beam currents and an implantation parameter in the implantation recipe, and evaluates measurement validity of the beam currents of the ion beam by using the model. The implantation parameter may be one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose. The model may be built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals

Abstract

An ion generator includes an arc chamber defining a plasma generation space, and a cathode which emits thermoelectrons toward the plasma generation space. The arc chamber includes a box-shaped main body having an opening, and a slit member mounted to cover the opening and provided with a front slit. An inner surface of the main body is exposed to the plasma generation space made of a refractory metal material. The slit member includes an inner member made of graphite and an outer member made of another refractory metal material. The outer member includes an outer surface exposed to an outside of the arc chamber. The inner member includes an inner surface exposed to the plasma generation space, and an opening portion which forms the front slit extending from the inner surface of the inner member to the outer surface of the outer member.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/063 - Geometrical arrangement of electrodes for beam-forming
• H01J 37/32 - Gas-filled discharge tubes

Abstract

An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/18 - Vacuum locks
• H01J 37/12 - Lenses electrostatic

Abstract

A wafer temperature adjusting device includes an upper surface, a wafer support mechanism that supports a wafer above the upper surface in a state where a distance between the upper surface and the wafer is maintained within a predetermined range and a first space between the upper surface and the wafer communicates with a second space above the wafer, a stage that adjusts a temperature of the upper surface, and a gas supply unit that supplies a heat transfer gas to the first space and the second space.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.

IPC Classes  ?

• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implantation method includes acquiring a first data set for setting beam energy of an ion beam output from the high energy multi-stage linear acceleration unit to be a first output value, determining a second data set for setting the beam energy of the ion beam output from the high energy multi-stage linear acceleration unit to be a second output value different from the first output value, based on the first data set, and performing ion implantation by irradiating a workpiece with the ion beam output from the high energy multi-stage linear acceleration unit operating in accordance with the second data set. An acceleration phase of the high frequency accelerator in each of the plurality of stages is the same between the first data set and the second data set, in all of the high frequency accelerators respectively in the plurality of stages.

IPC Classes  ?

• H01J 37/302 - Controlling tubes by external information, e.g. programme control
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

There is provided an insulating structure including a first end portion, a second end portion, a shaft portion connecting the first end portion and the second end portion to each other, and a surrounding portion including an inner surface facing an outer surface of the shaft portion and extending toward the second end portion from the first end portion. A gap between the outer surface of the shaft portion and the inner surface of the surrounding portion is configured to communicate with an outside. The first end portion, the second end portion, the shaft portion, and the surrounding portion are formed of electrical insulating material.

IPC Classes  ?

• C23C 14/48 - Ion implantation
• H01J 37/32 - Gas-filled discharge tubes

Abstract

There is provided an ion implanter including a beamline unit that transports an ion beam, an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, an illumination device that performs irradiation with illumination light in a direction intersecting with a transport direction of the ion beam in at least one of the beamline unit and the implantation processing chamber, an imaging device that generates a captured image captured by imaging a space through which the illumination light passes, and a control device that detects a particle which scatters the illumination light, based on the captured image.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/22 - Optical or photographic arrangements associated with the tube
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals

Abstract

There is provided an ion generation device including a plasma generation chamber that generates a plasma for extracting an ion, and a heating device configured to heat the plasma generation chamber by irradiating a member that defines the plasma generation chamber or a member that is to be exposed to the plasma generated inside the plasma generation chamber with a laser beam.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01J 37/18 - Vacuum locks
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/32 - Gas-filled discharge tubes

Abstract

There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals

Abstract

An ion implanter includes a beam scanner that performs a scanning with an ion beam in a scanning direction perpendicular to a traveling direction of the ion beam, and a beam profiler that is disposed downstream of the beam scanner and measures a beam current distribution of the ion beam when the scanning by the beam scanner is performed. The beam profiler includes an aperture array that includes a first aperture and a second aperture, a cup electrode array that is disposed to be fixed with respect to the aperture array, the cup electrode array including a first cup electrode and a second cup electrode, and a plurality of magnets.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals

Abstract

An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.

IPC Classes  ?

• H01J 37/302 - Controlling tubes by external information, e.g. programme control
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• C23C 14/48 - Ion implantation

Abstract

There is provided an ion generator including a vapor generating chamber for generating a vapor by heating a raw material in which a first solid material which is a single substance of an impurity element and a second solid material which is a compound containing the impurity element are mixed with each other, and a plasma generating chamber for generating a plasma containing ions of the impurity element by using the vapor.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/08 - Ion sourcesIon guns

Abstract

An ion implanter includes an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, a first Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a preparation process performed before the implantation process, a second Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a calibration process for calibrating a beam current measurement value of the first Faraday cup, and a blockade member for blocking the ion beam directed toward the second Faraday cup, the blockade member being configured so that the ion beam is not incident into the second Faraday cup during the implantation process and the preparation process, and the ion beam is incident into the second Faraday cup during the calibration process.

IPC Classes  ?

• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• C23C 14/48 - Ion implantation
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion generator includes: an arc chamber which defines a plasma generation space; a cathode which emits thermoelectrons toward the plasma generation space; and a repeller which faces the cathode with the plasma generation space interposed therebetween. The arc chamber includes a box-shaped main body on which a front side is open, and a slit member which is mounted to the front side of the main body and provided with a front slit for extracting ions. An inner surface of the main body which is exposed to the plasma generation space is made of a refractory metal material, and an inner surface of the slit member which is exposed to the plasma generation space is made of graphite.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/063 - Geometrical arrangement of electrodes for beam-forming
• H01J 37/32 - Gas-filled discharge tubes

Abstract

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.

IPC Classes  ?

• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• G01T 3/00 - Measuring neutron radiation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

An ion implanter includes: a main body which includes a plurality of units which are disposed along a beamline along which an ion beam is transported, and a substrate transferring/processing unit which is disposed farthest downstream of the beamline, and has a neutron ray source in which a neutron ray is generated due to collision of a ultrahigh energy ion beam; an enclosure which at least partially encloses the main body; and a neutron ray scattering member which is disposed at a position where a neutron ray which is emitted from the neutron ray source is incident in a direction in which a distance from the neutron ray source to the enclosure is equal to or less than a predetermined value.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
• G21K 1/10 - Scattering devicesAbsorbing devices
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects

Abstract

An ion implanter having a beam park device on the way of a beamline through which an ion beam is transported toward a wafer is provided. The beam park device includes a pair of park electrodes which faces each other across the beamline, and a beam dump which is provided away from the beamline in a facing direction of the pair of park electrodes and on a downstream side of the pair of park electrodes in a beamline direction. At least one of the pair of park electrodes includes a plurality of electrode bodies which are disposed to be spaced apart from each other in a predetermined direction perpendicular to both a direction in which the beamline extends and the facing direction, and each of the plurality of electrode bodies extends from an upstream side toward the downstream side in the beamline direction.

IPC Classes  ?

• H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/66 - Testing or measuring during manufacture or treatment

Abstract

An ion implantation apparatus includes a first angle measuring instrument configured to measure angle information on an ion beam in a first direction, a second angle measuring instrument configured to measure angle information on the ion beam in a second direction, a relative movement mechanism configured to change relative positions of the first angle measuring instrument and the second angle measuring instrument with respect to the ion beam in a predetermined relative movement direction, and a control device configured to calculate angle information on the ion beam in a third direction perpendicular to both a beam traveling direction and the relative movement direction based on the angle information on the ion beam in the first direction measured by the first angle measuring instrument and the angle information on the ion beam in the second direction measured by the second angle measuring instrument.

IPC Classes  ?

• H01J 37/31 - Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

A beamline device includes a deflection device deflecting an ion beam in a first direction perpendicular to a beam traveling direction by applying at least one of an electric field and a magnetic field to the ion beam. A slit is disposed such that the first direction coincides with a slit width direction. A beam current measurement device is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in the first direction. A control device calculates angle information in the first direction on the ion beam by acquiring a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction by the beam current measurement device while changing a deflection amount of the ion beam in the first direction with the deflection device.

IPC Classes  ?

• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support

Abstract

A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/141 - Electromagnetic lenses
• H01J 49/30 - Static spectrometers using magnetic analysers

Abstract

An ion implanter includes an ion source configured to generate an ion beam including an ion of a first nonradioactive nuclide, a beamline configured to support an ion beam irradiated target formed of a solid material including a second nonradioactive nuclide different from the first nonradioactive nuclide, and a controller configured to calculate at least one of an estimated radiation dosage of a radioactive ray and an estimated generation amount of a radioactive nuclide generated by a nuclear reaction between the first nonradioactive nuclide and the second nonradioactive nuclide.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 27/02 - Ion sourcesIon guns

Abstract

An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.

IPC Classes  ?

• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/08 - Ion sourcesIon guns

Abstract

An ion implantation apparatus includes an ion source that is capable of generating a calibration ion beam including a multiply charged ion which has a known energy corresponding to an extraction voltage, an upstream beamline that includes amass analyzing magnet and a high energy multistage linear acceleration unit, an energy analyzing magnet, a beam energy measuring device that measures an energy of the calibration ion beam downstream of the energy analyzing magnet, and a calibration sequence unit that produces an energy calibration table representing a correspondence relation between the known energy and the energy of the calibration ion beam measured by the beam energy measuring device. An upstream beamline pressure is adjusted to a first pressure during an ion implantation process, and is adjusted to a second pressure higher than the first pressure while the energy calibration table is produced.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/08 - Ion sourcesIon guns

Abstract

An ion implanter includes a plasma shower device configured to supply electrons to an ion beam with which a wafer is irradiated. The plasma shower device includes a plasma generating chamber provided with an extraction opening, a first electrode which is provided with an opening communicating with the extraction opening and to which a first voltage is applied with respect to an electric potential of the plasma generating chamber, a second electrode which is disposed at a position facing the first electrode such that the ion beam is interposed between the first and second electrodes and to which a second voltage is applied with respect to the electric potential of the plasma generating chamber, and a controller configured to independently control the first voltage and the second voltage to switch operation modes of the plasma shower device.

IPC Classes  ?

• H01J 37/32 - Gas-filled discharge tubes
• H01L 21/223 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a gaseous phase
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

A wafer holding device includes a wafer chuck that includes a wafer holding surface coming into contact with a wafer to be held and a plurality of attraction regions provided on the wafer holding surface, and a controller configured to independently control an attraction force of an at least one of the plurality of attraction regions. In a case where fixing of the wafer is released, the controller establishes a temporarily fixing state in which the attraction force of the at least one of the plurality of attraction regions is smaller than an attraction force in fixing the wafer, and thereafter, the controller sets attraction forces of all of the plurality of attraction regions to be smaller than the attraction force in fixing the wafer.

IPC Classes  ?

• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

In an insulating structure which insulates an electrode provided inside a vacuum region of an ion implanter from another member and supports the electrode, a first insulating member supports the electrode. A second insulating member is fitted to the first insulating member to suppress deposition of contamination particles to the first insulating member. The second insulating member is formed of a material having a hardness lower than that of the first insulating member. A Vickers hardness of an outer surface of the second insulating member is 5 GPa or less. Bending strength of the second insulating member is 100 MPa or less. The second insulating member is formed of a material including at least one of boron nitride, a porous ceramic, and a resin.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• H01J 37/32 - Gas-filled discharge tubes
• C23C 14/48 - Ion implantation
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion generator includes an arc chamber which has a plasma generating region therein, a cathode configured to emit a thermoelectron toward the plasma generating region, a repeller which faces the cathode in an axial direction in a state where the plasma generating region is interposed between the cathode and the repeller, and a cage which is disposed to partially surround the plasma generating region at a position between an inner surface of the arc chamber and the plasma generating region.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01J 27/26 - Ion sourcesIon guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
• H01J 27/08 - Ion sourcesIon guns using arc discharge
• H01J 27/20 - Ion sourcesIon guns using particle bombardment, e.g. ionisers
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implantation apparatus includes: a multistage linear acceleration unit including a plurality of stages of high-frequency resonators and a plurality of stages of focusing lenses; a first beam measuring unit disposed in the middle of the multistage linear acceleration unit and configured to allow passage of a beam portion adjacent to a center of a beam trajectory and measure a current intensity of another beam portion blocked by an electrode body outside a vicinity of the center of the beam trajectory; a second beam measuring unit disposed downstream of the multistage linear acceleration unit and configured to measure a current intensity of an ion beam exiting from the multistage linear acceleration unit; and a control device configured to adjust a control parameter of the plurality of stages of focusing lenses based on measurement results of the first and second beam measuring units.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H05H 15/00 - Methods or devices for acceleration of charged particles not otherwise provided for
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H05H 7/00 - Details of devices of the types covered by groups
• H05H 9/04 - Standing-wave linear accelerators

Abstract

An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.

IPC Classes  ?

• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.

IPC Classes  ?

• H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

An angle measurement device includes: a slit through which an ion beam is incident, and a width direction of which is orthogonal to a beam traveling direction of the ion beam toward a wafer; and a plurality of electrode bodies which are provided at positions away from the slit in the beam traveling direction, and each of which includes a beam measurement surface that is a region which is exposed to the ion beam having passed through the slit. The plurality of electrode bodies are disposed such that the beam measurement surfaces of the electrode bodies are arranged in order in the width direction of the slit and the beam measurement surfaces adjacent to each other in the width direction of the slit deviate from each other in the beam traveling direction.

IPC Classes  ?

• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/244 - DetectorsAssociated components or circuits therefor

Abstract

An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.

IPC Classes  ?

• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
• H01L 29/66 - Types of semiconductor device
• H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

Abstract

An ion implantation method for scanning an ion beam reciprocally in an x direction and moving a wafer reciprocally in a y direction to implant ions into the wafer is provided. The method includes: irradiating a first wafer arranged to meet a predetermined plane channeling condition with the ion beam and measuring resistance of the first wafer irradiated with the ion beam; irradiating a second wafer arranged to meet a predetermined axial channeling condition with the ion beam and measuring resistance of the second wafer irradiated with the ion beam; and adjusting an implant angle distribution of the ion beam by using results of measuring the resistance of the first and second wafers.

IPC Classes  ?

• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion generator includes an ion source control unit that controls a gas supply unit and a plasma excitation source in accordance with a current ion source condition and a new ion source condition to be employed subsequent to the current ion source condition, a retention time obtaining unit that obtains retention time for the current ion source condition, and a pre-treatment condition setting unit that sets a pre-treatment condition defining a pre-treatment for forming a surface layer region suitable for the new ion source condition on a plasma chamber inner wall based on the current ion source condition, the retention time, and the new ion source condition. The ion source control unit is configured to control the gas supply unit and the plasma excitation source in accordance with the pre-treatment condition when the current ion source condition is changed to the new ion source condition.

IPC Classes  ?

• H01J 37/32 - Gas-filled discharge tubes
• B08B 9/08 - Cleaning of containers, e.g. tanks
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

IPC Classes  ?

• A61N 5/00 - Radiation therapy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

A first conveyance mechanism and a second conveyance mechanism convey a pair of two wafers to an alignment device from a wafer container via a buffer device, and then bring the wafers respectively into a first load lock chamber and a second load lock chamber after alignment. An intermediate conveyance mechanism conveys one of the pair of two wafers between the first load lock chamber and a vacuum processing chamber. The intermediate conveyance mechanism conveys the other of the pair of two wafers between the second load lock chamber and the vacuum processing chamber. The first conveyance mechanism and the second conveyance mechanism take out the pair of two wafers subjected to an implantation process from the first load lock chamber and the second load lock chamber and store the wafers into the wafer container.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• C23C 14/48 - Ion implantation
• H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

A plasma generator includes: an arc chamber having a plasma generation region in which plasma is generated in the inside thereof; a magnetic field generator configured to apply a magnetic field to the plasma generation region; and a cathode configured to extend in an axial direction along an applying direction of the magnetic field applied to the plasma generation region and provided with a cathode cap that emits thermal electrons at a front end thereof. The cathode cap protrudes toward the inside of the arc chamber in the axial direction and has a shape of which a width in the radial direction perpendicular to the axial direction becomes smaller toward the inside of the arc chamber.

IPC Classes  ?

• H01J 27/08 - Ion sourcesIon guns using arc discharge
• H01J 37/32 - Gas-filled discharge tubes

Abstract

A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

IPC Classes  ?

• H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement

Abstract

A beam extraction slit structure includes a plasma chamber interior surface that is, in operation, in contact with a plasma; a plasma chamber exterior surface that faces an extraction electrode; and a slit surface part that forms a beam extraction slit between the plasma chamber interior surface and the plasma chamber exterior surface in the beam extraction direction. The slit surface part includes a plasma meniscus fixing part formed in an area of relatively higher plasma density in the slit longitudinal direction to fixingly maintain a plasma meniscus of the plasma and a plasma meniscus non-fixing part formed in an area of relatively lower plasma density in the slit longitudinal direction to movably maintain the plasma meniscus of the plasma in the beam extraction direction.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/08 - Ion sourcesIon guns

Abstract

An energy analysis slit of an ion implanter is configured to enable switching between a standard slit opening used for implantation processing performed under a predetermined implantation condition and a high-precision slit opening having higher energy precision than the standard slit opening and used to tune an acceleration parameter for a radio frequency linear accelerator. The acceleration parameter is determined for the predetermined implantation condition so that at least a part of ions supplied to the radio frequency linear accelerator is accelerated to have target energy, and so that the beam current amount measured by a beam measurement unit is equivalent to a target beam current amount.

IPC Classes  ?

• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/244 - DetectorsAssociated components or circuits therefor

Abstract

An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for

Abstract

An ion implantation apparatus includes: a lens electrode unit including a plurality of electrode sections for parallelizing an ion beam; and a vacuum unit that houses the lens electrode unit in a vacuum environment. The vacuum unit includes: a first vacuum container having a first conductive container wall; a second vacuum container having a second conductive container wall; and an insulating container wall that allows the first vacuum container and the second vacuum container to communicate with each other and that insulates the first conductive container wall from the second conductive container wall. An insulating member is provided that insulates at least one electrode section of the lens electrode unit from at least one of the first conductive container wall and the second conductive container wall, and the insulating member is housed in the vacuum environment together with the lens electrode unit.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/10 - Lenses
• H01J 37/244 - DetectorsAssociated components or circuits therefor

Abstract

Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.

IPC Classes  ?

• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

Provided is a beam irradiation apparatus including: a beam scanner that is configured such that a charged particle beam is reciprocatively scanned in a scanning direction; a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; and a data processor that calculates effective irradiation emittance of the charged particle beam using results measured by the measurement device. The measurement device measures a time dependent value for angular distribution of the charged particle beam. The data processor transforms time information included in the time dependent value for the angular distribution to position information and thus calculates the effective irradiation emittance. The effective irradiation emittance represents emittance of a virtual beam bundle, the virtual beam bundle being formed by summing portions of the charged particle beam which are incident into the region of the measurement target.

IPC Classes  ?

• H01J 37/302 - Controlling tubes by external information, e.g. programme control
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implantation apparatus includes a beam scanning unit and a beam parallelizing unit arranged downstream thereof. The beam scanning unit has a scan origin in a central part of the scanning unit on a central axis of an incident ion beam. The beam parallelizing unit has a focal point of a parallelizing lens at the scan origin. The ion implantation apparatus is configured such that a focal position of the incident beam into the scanning unit is located upstream of the scan origin along the central axis of the incident beam. The focal position of the incident beam into the scanning unit is adjusted to be at a position upstream of the scan origin along the central axis of the incident beam such that a divergence phenomenon caused by the space charge effect in an exiting ion beam from the parallelizing unit is compensated.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/10 - Lenses

Abstract

An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode.

IPC Classes  ?

• H01J 3/18 - Electrostatic lenses
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/08 - Ion sourcesIon guns

Abstract

An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

An ion generator includes an arc chamber, a cathode that extends outward from the inside of the arc chamber in an axial direction and that emits a thermal electron into the arc chamber, a thermal reflector with a cylindrical shape provided around the cathode in a radial direction and extending in the axial direction, and a narrow structure configured to narrow a width in the radial direction of a gap between the cathode and the thermal reflector at a given position in the axial direction.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01J 37/06 - Electron sourcesElectron guns

Abstract

A beamline unit of an ion implanter includes a steering electromagnet, a beam scanner, and a beam collimator. The beamline unit contains a reference trajectory of an ion beam. The steering electromagnet deflects the ion beam in an x direction perpendicular to a z direction. The beam scanner deflects the ion beam in the x direction in a reciprocating manner to scan the ion beam. The beam collimator includes a collimating lens that collimates the scanned ion beam in the z direction along the reference trajectory, and the collimating lens has a focus at a scan origin of the beam scanner. A controller corrects a deflection angle in the x direction in the steering electromagnet so that an actual trajectory of the deflected ion beam intersects with the reference trajectory at the scan origin on an xz plane.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01J 37/141 - Electromagnetic lenses
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.

IPC Classes  ?

• G01R 31/26 - Testing of individual semiconductor devices
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

A final energy filter includes a first adjustment electrode portion, an intermediate electrode portion, and a second adjustment electrode portion. The final energy filter further includes a power supply unit. The power supply unit is configured such that it applies the voltages separately to the first adjustment electrode portion, the intermediate electrode portion, and the second adjustment electrode portion. The power supply unit applies voltages to an upstream auxiliary electrode portion, a deflection electrode portion and a downstream auxiliary electrode portion, respectively, such that the energy range of ion beam in a first region between the upstream auxiliary electrode portion and the deflection electrode portion is approximately equal to that in a second region between the deflection electrode portion and the downstream auxiliary electrode portion.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects

Abstract

A beam energy measuring device in an ion implanter includes a parallelism measuring unit that measures a parallelism of an ion beam at a downstream of a beam collimator of the ion implanter and an energy calculating unit that calculates an energy of the ion beam from the measured parallelism. The ion implanter may further include a control unit that controls a high energy multistage linear acceleration unit based on the measured energy of the ion beam so that the ion beam has a target energy.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

A beam collimator includes a plurality of lens units that are arranged along a reference trajectory so that a beam collimated to the reference trajectory comes out from an exit of the beam collimator. Each of the plurality of lens units forms a bow-shaped curved gap and is formed such that an angle of a beam traveling direction with respect to the reference trajectory is changed by an electric field generated in the bow-shaped curved gap. A vacant space is provided between one lens unit of the plurality of lens units and a lens unit that is adjacent to the lens unit. The vacant space is directed in a transverse direction of the collimated beam in a cross section that is perpendicular to the reference trajectory. An inner field containing the reference trajectory is connected to an outer field of the plurality of lens units through the vacant space.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/12 - Lenses electrostatic

Abstract

In an ion implantation apparatus, an interruption member interrupts an ion beam B in the middle of a beam line. A plasma shower device is provided at the downstream side of the interruption member in the beam line. A control unit causes the interruption member to interrupt the ion beam B during an ignition start period of the plasma shower device. The interruption member may be provided at the upstream side of at least one high-voltage electric field type electrode in the beam line. A gas supply unit may supply a source gas to the plasma shower device. The control unit may start the supply of the source gas from the gas supply unit after the ion beam B is interrupted by the interruption member.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects

Goods & Services

Machines for manufacturing semiconductor devices; machines for ion implantation

Abstract

An ion generator includes: an arc chamber; a repeller that includes a repeller plate provided within the arc chamber and a repeller extension portion inserted through a through hole communicating the inside and the outside of the arc chamber; and a supporting structure that is provided outside the arc chamber and that supports the repeller so that a gap is ensured between the repeller extension portion and an inner wall of the through hole. The supporting structure includes a cover member that forms, outside the arc chamber, a small chamber communicating with the gap, and an insulation member that electrically insulates the arc chamber and the repeller from each other.

IPC Classes  ?

• H01J 27/02 - Ion sourcesIon guns
• H01J 27/08 - Ion sourcesIon guns using arc discharge
• H01J 37/08 - Ion sourcesIon guns

Abstract

An antenna cover that protects a surface of an antenna provided in a plasma chamber and exciting an electric field with a high frequency to an inner portion of the plasma chamber is provided. In the antenna cover, the thickness of the antenna cover in at least one direction among directions orthogonal to the surface of the antenna is different according to a position on the surface, such that space dependency of an electric potential on an external surface of the antenna cover decreases. In the antenna cover, the thickness of at least one direction may be changed along an extension direction of the antenna.

IPC Classes  ?

• H01Q 1/26 - SupportsMounting means by structural association with other equipment or articles with electric discharge tube
• H01Q 1/40 - Radiating elements coated with, or embedded in, protective material
• H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
• H01J 37/32 - Gas-filled discharge tubes
• H01Q 1/42 - Housings not intimately mechanically associated with radiating elements, e.g. radome
• H01Q 7/00 - Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop

Abstract

A multistage quadrupole lens system in an ion implantation apparatus includes a first quadrupole lens and a third quadrupole lens. A first bore radius of the first quadrupole lens may be smaller than a third bore radius of the third quadrupole lens. The multistage quadrupole lens system may further include a second quadrupole lens placed between the first quadrupole lens and the third quadrupole lens. A second bore radius of the second quadrupole lens may take a value lying between the first bore radius of the first quadrupole lens and the third bore radius of the third quadrupole lens (i.e., an intermediate value between them).

IPC Classes  ?

• H01J 37/12 - Lenses electrostatic
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/21 - Means for adjusting the focus

Abstract

A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.

IPC Classes  ?

• H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• H01J 37/24 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y direction that is perpendicular to a traveling direction of the ion beam and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction; a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; and a beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position.

IPC Classes  ?

• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/244 - DetectorsAssociated components or circuits therefor

Abstract

A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

IPC Classes  ?

• G21K 1/08 - Deviation, concentration, or focusing of the beam by electric or magnetic means
• H01J 3/14 - Arrangements for focusing or reflecting ray or beam
• H01J 3/26 - Arrangements for deflecting ray or beam
• H01J 49/42 - Stability-of-path spectrometers, e.g. monopole, quadrupole, multipole, farvitrons

Abstract

A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass analyzer; a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam; a high-energy beam deflection unit that changes the direction of the high-energy ion beam toward the wafer; and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The deflection unit is configured by a plurality of deflection electromagnets, and at least a horizontal focusing element is inserted between the plurality of deflection electromagnets.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects

Abstract

A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• C23C 14/48 - Ion implantation
• H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• A61N 5/10 - X-ray therapyGamma-ray therapyParticle-irradiation therapy
• G21K 1/10 - Scattering devicesAbsorbing devices

Abstract

A high-energy ion implanter includes a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam, a deflection unit that changes the direction of the high-energy ion beam toward a semiconductor wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy electric field type beam collimator, and a high-energy electric field type final energy filter.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H05H 7/04 - Magnet systemsEnergisation thereof
• H05H 9/04 - Standing-wave linear accelerators

Abstract

A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum; a beam transportation line unit; and a substrate processing/supplying unit. In this apparatus, an electric field type final energy filter that deflects a high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy

Abstract

An insulation structure of high voltage electrodes includes an insulator having an exposed surface and a conductor portion, which includes a joint region in contact with the insulator, and a heat-resistant portion provided, along at least part of an edge of the joint region, in such a manner as to be adjacent to the exposed surface of the insulator. The heat-resistant portion is formed of an electrically conductive material whose melting point is higher than that of the conductor portion. The heat-resistant portion may be so provided as to have a gap between the insulator and the exposed surface.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/248 - Components associated with high voltage supply

Abstract

An ion implantation apparatus in which a fluorine compound gas is used as a source gas of an ion source, includes a vacuum chamber into which the source gas is introduced; an introduction passage connected to the vacuum chamber and configured to introduce into the vacuum chamber a cleaning gas containing a component that reacts with the fluorine compound deposited inside the vacuum chamber so as to generate a reactant gas; a delivery device configured to forcibly introduce the cleaning gas into the introduction passage; a first adjustment device configured to adjust an amount of gas flow in the introduction passage; an exhausting passage connected to the vacuum chamber and configured to forcibly exhaust the reactant gas along with the cleaning gas; and a second adjustment device configured to adjust an amount of gas flow in the exhausting passage.

IPC Classes  ?

• H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
• C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass