01 - Chemical and biological materials for industrial, scientific and agricultural use
06 - Common metals and ores; objects made of metal
Goods & Services
Soldering fluxes; Soldering chemicals; Chemicals for use in the process of producing printed circuit boards, namely, solder mask; industrial chemicals, namely, organic solderability preservative for printed circuit boards Solder pastes; Solder wire
This control system is for controlling a plurality of SiC elements (semiconductor elements). In this control system, a host CPU generates stop command information relating to the stopping of a plurality of SiC elements. In accordance with the stop command information, an FPGA (stop determination circuit 43, switching unit) switches an SiC element to be stopped at regular time intervals and operates the SiC element. The stop determination circuit 43 is a circuit that determines an SiC to be stopped, stops the output of PWM associated with the SiC element determined to be subject to stopping, and stops the SiC element.
H02M 7/48 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
An FPGA 30 of a control system, according to the present invention, comprises: a delay time measurement circuit 46 (time-measuring unit) that outputs a PWM (output signal) to a GDM (gate driver module, drive circuit device) that drives a SiC (semiconductor element), receives input of a Sync (input signal) based on the PWM from the GDM, and measures the time from the output of the PWM to the input of the Sync; and a redundancy error determination circuit 47 (determination unit) that determines that the SiC is in an error state if the measurement result from the delay time measurement circuit 46 is outside of a predetermined fixed time range. (Selected drawing: Fig. 7)
H02M 7/48 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
The present invention provides a technology that can contribute to a production step. A core device applied to a DC-DC converter 100 comprises: two core members 130, 140 that form a core corresponding to a coil in a state where the two core members 130, 140 are combined in the direction along the axis of the coil without a gap between the joining surfaces of the two core members 130, 140; a core clip 160 that is assembled so as to surround the outer side of the core which includes at least two portions where the joining surfaces intersect on the outer surfaces of the two core members 130, 140 and that can hold the two core members 130, 140 in a state where the two core members 130, 140 are pressed against each other in the direction along the axis of the coil; and a core cover 150 that is provided between the core clip 160 and the core and that covers the outer surfaces of the two core members 130, 140 which include at least one portion where the joining surfaces intersect.
H01F 37/00 - Fixed inductances not covered by group
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
A method for manufacturing a reactor includes a bonding process of joining molded cores with a molded coil with an adhesive, and a welding process of connecting, by welding, the lead wire of a coil to a busbar fixed to the molded core. The coils are attached to respective leg portions. The bonding process includes an applying process of applying the adhesive to the joining surfaces of the respective leg portions of each of the core members, and the inner circumferential surfaces of the respective yoke portions of the core members, a depressing process of spreading the applied adhesive by depression, and a curing process of curing the adhesive.
H01F 27/32 - Insulating of coils, windings, or parts thereof
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
An insulated wire comprising a wire and an insulating film that is provided on the wire, wherein at least one layer of the insulating film is a first insulating layer comprising a polyimide that is obtained by imidizing a first polyamic acid, the first polyamic acid is a polyaddition reaction product of an (A) acid dianhydride and a (B) diamine, a (B1) dimer diamine is included in a molar ratio of 0.2 or greater relative to the entire diamine component, and a source material of the polyamic acid includes a fluorine atom per molecule.
A resin composition comprising (X) a resin, (Y) a phosphorus-based flame retardant, and (Z) aluminum hydroxide, wherein the blended amount of the (Y) component is 5-30 parts by mass with respect to 100 parts by mass of the (X) component, and the blended amount of the (Z) component is 10-50 parts by mass with respect to 100 parts by mass of the (X) component.
C08L 101/00 - Compositions of unspecified macromolecular compounds
B32B 9/00 - Layered products essentially comprising a particular substance not covered by groups
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
B32B 27/18 - Layered products essentially comprising synthetic resin characterised by the use of special additives
The purpose of the present invention is to provide: an adhesive resin composition which is capable of forming a resin film that exhibits low dielectric properties while having excellent embedding properties and lamination properties; and a resin film, a multilayer wiring board, a copper foil with a resin, a coil structure, and a magnetic device, each of which is produced using the adhesive resin composition. The adhesive resin composition contains (A) a polyamic acid and (B) a compound having a maleimide group, wherein the (B) compound having a maleimide group is contained in an amount of 10 mass% to 120 mass% inclusive with respect to 100 mass% of the (A) polyamic acid.
C09J 179/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
B32B 15/088 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyamides
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
C08L 79/04 - Polycondensates having nitrogen-containing heterocyclic rings in the main chainPolyhydrazidesPolyamide acids or similar polyimide precursors
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
C09J 179/04 - Polycondensates having nitrogen-containing heterocyclic rings in the main chainPolyhydrazidesPolyamide acids or similar polyimide precursors
This polyamic acid is a polyaddition reaction product of (A) an acid dianhydride and (B) a diamine, wherein (B1) a dimer diamine is contained in a molar ratio of 0.2 or more with respect to the total diamine components, and a fluorine atom is contained in one molecule of a raw material of the polyamic acid.
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
B32B 15/088 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyamides
H01B 3/30 - Insulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances plasticsInsulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances resinsInsulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances waxes
A resin film (100) comprises a core layer (2) and adhesive resin layers (1) provided respectively to both surfaces of the core layer (2), wherein the adhesive resin layers (1) are made of a first adhesive resin composition, which includes a poly(amic acid) that is a product of polyaddition reaction between an acid dianhydride (A) and a diamine (B), or a second adhesive resin composition, which includes an epoxy resin. In the first adhesive resin composition, the poly(amic acid) includes a dimer diamine (B1) at a molar ratio of 0.2 or higher with respect to the whole diamine component. A cured object formed from the second adhesive resin composition has a dielectric breakdown strength of 300 kV/mm or greater. The core layer (2) is a polyimide film comprising a polyimide obtained by imidizing the poly(amic acid) contained in the first adhesive resin composition.
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
C09J 7/25 - PlasticsMetallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
C09J 163/00 - Adhesives based on epoxy resinsAdhesives based on derivatives of epoxy resins
C09J 179/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
The purpose of the present invention is to provide: a polyimide which is capable of forming a polyimide film that exhibits low dielectric properties and low fluidity while exhibiting good film-forming properties and further having excellent embedding properties and adhesion; and a polyimide film, a multilayer wiring board, a copper foil with a resin, a coil structure, and a magnetic device, each of which is produced using the polyimide. The polyimide has (A) a structure derived from an ester-type acid dianhydride and (B) a structure derived from at least two diamines. The (B) diamines include (B1) a dimeric diamine at a molar ratio of 0.3 or more wherein the number of moles of all diamines is 1.0, and at least one terminal is modified with a maleimide group.
H01B 3/30 - Insulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances plasticsInsulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances resinsInsulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of organic substances waxes
Disclosed is an MMC converter including a three-phase iron core reactor in which three-terminal leg circuits, in which two two-terminal arm power circuits are connected in series, are provided in u, v, and w phases, positive-side and negative-side terminals of the three-terminal leg circuits are each connected in a star shape and thereby connected to a DC power supply, an intermediate terminal is connected to an AC power supply, and a circulating current due to voltage imbalance between the three legs is suppressed, wherein, in order to suppress AC inductance imbalance between the two poles and between the three phases while maintaining the linearity of inductance by avoiding magnetic saturation of each part of the iron core when an AC system accident occurs, the cross-sectional area of a yoke and side legs serving as a return path of DC magnetic flux of each phase of the three-phase iron core reactor is made larger than that of a main leg (a winding iron core with a non-magnetic gap) of each phase, two sets of windings composed of two concentrically arranged coils wound on the main leg of each phase are coaxially arranged on the main leg, and the winding direction of each of the coils and the connection between the coils are optimally selected. Furthermore, auxiliary yokes crossing the central parts of the main legs of the respective phases or side legs longitudinally crossing between the main legs of the respective phases are provided and used as paths for magnetic flux formed by an AC current.
A solder alloy includes 2.5 mass % or more and 4.0 mass % or less of Ag, 0.6 mass % or more and 0.75 mass % or less of Cu, 2.0 mass % or more and 4.5 mass % or less of Bi, 0.01 mass % or more of Ni, 0.01 mass % or more of Co, and a balance including Sn. A total content of Ni and Co is 0.05 mass % or less. A formula 13≤58.046+(−4.238×Ag)+(−11.371×Cu)+(−4.145×Bi)≤33 is satisfied, wherein each of Ag, Cu, and Bi represents a content (mass %) of each element in the solder alloy.
The present invention of a valve 1 with a manual handle comprises a handle 10 and a display disk 20 which constitute a display part indicating an open state and a closed state of a valve body 160. A first window part 14 is provided in the form of an opening on an upper surface of the handle 10. A first contact part 16 is provided to the handle 10. A first display 24A and a second display 24B are provided on an upper surface of the display disk 20 and indicate open/closed states of a seat disk 160. A second contact part 23a, capable of making contact with the first contact part 16 before a counterclockwise rotation limit of the handle 10 is reached, and a third contact part 23b, capable of making contact with the first contact part 16 before a clockwise rotation limit of the handle 10 is reached, are provided to the display disk 20. The display disk 20 is held in place by frictional force which is less than the rotational force of the handle 10 transmitted when the first contact part 16 makes contact with either the second contact part 23a or the third contact part 23b.
F16K 37/00 - Special means in or on valves or other cut-off apparatus for indicating or recording operation thereof, or for enabling an alarm to be given
15.
JUNCTION BARRIER SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SAME
Provided are a junction barrier Schottky diode having a trench structure that has high surge resistance and reduced energy loss during switching operation, and a method for manufacturing the same. An embodiment provides a junction barrier Schottky diode 1 comprising: an n-type semiconductor layer 11 having a plurality of trenches 111; a p-type semiconductor film 12 provided in contact with an inner surface of the a plurality of trenches 111; an anode electrode 13 which is provided on a first surface 113 of the n-type semiconductor layer 11 and in contact with a mesa-shaped portion 112 of the n-type semiconductor layer 11, a part of the anode electrode 13 being covered by the p-type semiconductor film 12 in the plurality of trenches 111; and a cathode electrode 14 provided on a second surface 114 of the n-type semiconductor layer 11 directly or with another layer therebetween.
H10D 62/10 - Shapes, relative sizes or dispositions of the regions of the semiconductor bodiesShapes of the semiconductor bodies
H10D 62/86 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
A power semiconductor module (200) comprises: a power semiconductor chip (1) provided with two wiring boards (5, 6) and a power semiconductor element (100A) that is provided between the two wiring boards (5, 6) so as to connect wires (52, 62) to each other, the power semiconductor element (100A) being provided with a first electrode (11) and a second electrode (12) on a first surface (1a), and being provided with a third electrode (14) on a second surface (1b); and a first connection member (2) provided with a first conductive portion (21) that is provided to the first surface (1a) of the power semiconductor chip (1) so as to be electrically connected to the first electrode (11), a second conductive portion (22) that is provided so as to be electrically connected to the second electrode (12) and has a portion protruding outward from the outer peripheral edge of the power semiconductor chip 1 in plan view, and a first insulating layer (23) that wraps around the first conductive portion (21) and the second conductive portion (22). An insulating film (8) is provided to at least one of the wires (52, 62) of the two wiring boards (5, 6).
An insulating material (100) comprising a first insulating layer (1) that comprises a first resin composition and a second insulating layer (2) that is provided on at least one surface of the first insulating layer (1) and that comprises a second resin composition, wherein the first resin composition contains an inorganic filler, and the second resin composition does not contain an inorganic filler.
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
A carbon coating composition for spraying contains (A) a resin, (B) a carbon-based filler, and (C) a solvent. The component (B) contains (B1) graphite and (B2) carbon black. The component (C) contains (C1) at least one selected from the group consisting of propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate. The blending amount of the component (C) is from 30 mass% to 70 mass% relative to 100 mass% of the carbon coating composition.
A solder alloy capable of forming a joint portion having heat cycle resistance and drop impact resistance, the solder alloy comprising: 45 mass% or more and 63 mass% or less of Bi; 0.1 mass% or more and less than 0.7 mass% of Sb; and 0.05 mass% or more and 1 mass% or less of In, with a balance being Sn and inevitable impurities, wherein a liquidus temperature of the solder alloy is 170°C or lower.
The present invention correctly synchronizes and drives a plurality of external devices connected in parallel. A FPGA 30 is provided with a delay control circuit for delaying PWMs 1, 2, 3 on the basis of Syncs 1, 2, 3. The delay control circuit comprises: a phase difference detection circuit 40 (phase difference detection unit) for detecting a phase difference between the Syncs 1, 2, 3 (input signals), which are inputted from a gate driver/SiC 100; a phase difference time measurement circuit 50 (phase difference time measurement unit) for measuring a phase difference time of the phase difference detected by the phase difference detection circuit 40; a correction rate integration circuit 60 (integration unit) for calculating an integrated value by adding or subtracting the previous phase difference time to or from the current phase difference time measured by the phase difference time measurement circuit 50; a delay time determination circuit 70 (delay time determination unit) for determining a delay time of the PWMs 1, 2, 3 (output signals) on the basis of the integrated value calculated by the correction rate integration circuit 60; and a delay circuit 80 (delay unit) for delaying the PWMs 1, 2, 3 on the basis of the determined delay time.
A reactor that suppresses the transmission of the vibration of the core and the vibration of the coil and that reduces the vibration thereof is provided. The reactor includes a coil 3 with a cylindrical shape and a core 1 having legs 12 around which the coil 3 is wound. The core includes a core mold resin 2 which covers at least a part of the core 1, and a core holder which holds the core 1. The coil 3 includes a coil mold resin 4 which covers at least a part of the coil 3, and a coil holder which holds the coil 3. The core holder and the coil holder independently hold the core 1 and the coil 3, respectively, and a gap S1 is provided between the legs 12 and the inner circumferential surface of the coil 3.
Provided is a resin film (100) comprising a core layer (2) and adhesive resin layers (1) provided on both surfaces of the core layer (2), wherein each adhesive resin layer (1) is constituted from an adhesive resin composition, and the minimum viscosity of the adhesive resin composition from 40°C to 160°C as measured by a rheometer is 500 Pa·s or more.
This solder alloy, even when Bi is added, has heat cycle resistance and drop impact resistance, and can form a joining part that suppresses lift-off. The solder alloy comprises 35 mass% to 65 mass% of Bi, 0.1 mass% to 0.65 mass% of Sb, 0.05 mass% to 2 mass% of Ag, and 0.001 mass% to 0.1 mass% of at least one of Ni and Co, with the remainder consisting of Sn and inevitable impurities.
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
B23K 35/22 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
The present invention provides a technique for ensuring a long creepage distance. Provided is a current sensor 100, wherein a magnetic core 110, an inner coating part 120, and an outer coating part 130 are integrally provided by two-stage insert molding. As a result of the insert being fixed in the mold during molding, an inner opening 123 is formed in the inner coating 120, and an outer opening 134 is formed in the outer coating 130. However, since the outer opening 134 is separated from the inner opening 123 and does not overlap the inner opening 123, the magnetic core 110 is not exposed from the outer opening 134. Therefore, in the current sensor 100, it is possible to ensure a longer creepage distance than a current sensor in which the magnetic core is exposed from an opening formed in a wall part of a case body. In addition, since a circuit board on which a magnetosensitive element is mounted is positioned in relation to the inner covering part 120 formed integrally with the magnetic core 110, the positional accuracy of the magnetosensitive element with respect to the magnetic core 110 can be further improved.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
30.
SOLDER ALLOY, JOINED PART, JOINING MATERIAL, SOLDER PASTE, JOINED STRUCTURE, AND ELECTRONIC CONTROL DEVICE
A solder alloy includes 35 mass % or more and 65 mass % or less of Bi, 0.1 mass % or more and 0.65 mass % or less of Sb, 0.05 mass % or more and 2 mass % or less of Ag, and a balance including Sn and an inevitable impurity.
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
B23K 35/02 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
B23K 35/36 - Selection of non-metallic compositions, e.g. coatings, fluxesSelection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
Provided are: a molded coil which is inhibited from suffering resin leakage to an opening surface and has excellent heat dissipation properties; and a reactor. A molded coil 1 includes a coil-covering resin 3 which covers a part or the entirety of a coil 2. The coil-covering resin 3 comprises: an edge surface plate 71 which covers a part or the entirety of a cylinder edge surface 25; a side surface plate 72 which is connected to the edge surface plate 71 and covers a part or the entirety of a side surface 27; and a molding resin 9. The side surface 27 adjoins both an opening surface 23, which is uncovered with the coil-covering resin 3, and the cylinder edge surface 25. The edge surface plate 71 has a slit 8 extending from a portion of a side edge 711 of the side surface plate 71 which is located at a corner 722 of the side surface plate 72, along a vertical side 724, which is the boundary between the edge surface plate 71 and the side surface plate 72. The side surface plate 72 is separated from the edge surface plate 71 by the slit 8, but is connected to the edge surface plate 71 at the end 84 of the slit 8.
Provided is a coil device that has good heat dissipation properties and is reduced in size and weight. A magnetic core 2 according to one embodiment of the present invention comprises a first core 20. The first core 20 has a first central leg 21, an annular part surrounding the first central leg 21, and a first yoke 23 connecting the first central leg 21 and the annular part at one end of the first core 20. The end face of the first central leg 21 and the end face of the annular part are formed on the same plane. An annular recessed part capable of housing a coil is formed between the first central leg 21 and the annular part.
Provided are: a molded coil manufacturing method with which the length of a coil in a winding axis direction can be adjusted while suppressing deformation of the coil; and a molded coil. The molded coil manufacturing method for mold fabricating a coil comprises: a winding step in which a coil 2 is wound so as to make the length of the coil in a winding axis direction longer than a desired length; an accommodation step in which the coil 2 is accommodated in a mold; a pressing step in which, after the accommodation step, the coil 2 is pressed in the winding axis direction by a pressing member 9; and an injection step in which, after the pressing step, a resin is injected into the mold. The coil 2 has a pressing surface 26 which is one end surface that is orthogonal to the winding axis. In the pressing step, the pressing member 9 presses the pressing surface 26, and in the injection step, the resin is injected toward the pressing surface 26. The pressing surface 26 is pressed by the pressing member 9 and by the injection pressure of the resin.
A semiconductor substrate includes at least one main surface as a crystal growth base surface, and a gallium oxide-based semiconductor single crystal. The growth base surface is a (001) plane. An off angle in a [010] direction in a continuous region of not less than 70 area % of the growth base surface is in a range of more than −0.3° and not more than −0.01°, or in a range of not less than 0.01° and less than 0.3°. An off angle in a [001] direction in the region of the growth base surface is in a range of not less than −1° and not more than 1°. The semiconductor substrate has a diameter of not less than 2 inches.
Provided is a drive circuit apparatus capable of ensuring satisfactory insulation between an input-side component and an output-side component. In the present invention, a gate driver is provided with: a driver substrate 101 that can be mounted on an IGBT module which is an external device to be driven; input-side wiring patterns 301, 302 arranged on the driver substrate 101; output-side wiring patterns 303, 304 arranged on the driver substrate 101; and a plurality of slits S1-S7 that have different shapes and that are formed through the driver substrate 101 at positions intersecting lines L1, L2, L3 (virtual lines) which connect the input-side wiring patterns 301, 302 and the output-side wiring patterns 303, 304 with straight lines (arbitrarily defined straight lines, for example, straight lines having the shortest distance or a distance longer than the shortest distance).
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
A semiconductor substrate includes at least one main surface as a crystal growth base surface, and a gallium oxide-based semiconductor single crystal. The growth base surface is a (001) plane. An off angle in a [010] direction in a continuous region of not less than 70 area % of the growth base surface is in a range of more than −0.3° and not more than −0.01°, or in a range of not less than 0.010 and less than 0.3°. An off angle in a [001] direction in the region of the growth base surface is in a range of not less than −1° and not more than 1°. The semiconductor substrate has a diameter of not less than 2 inches.
The present disclosure is related to providing a polyamic acid that can form a polyimide exhibiting a low dielectric property and high heat resistance and that has good film formability, and a polyamic acid composition, polyimide, polyimide film, and printed circuit board that are produced by using this polyamic acid. A polyamic acid that is a product obtained by polyaddition reaction between a tetracarboxylic dianhydride (A) and at least two diamines (B), wherein the at least two diamines (B) contain a diamine having a fluorene skeleton (B1) and a dimer diamine (B2).
In the present invention, the temperature drop in a buffer part between zones is prevented. This conveying heating apparatus is provided with: a heating device in which a plurality of heating furnaces are arranged and which is configured so as to blow hot air to an object to be heated by the heating furnaces; a buffer part which is present between the heating furnaces; a carrying conveyor that conveys the object to be heated; and a tubular infrared lamp heater provided in the buffer part so that the longitudinal direction thereof crosses the conveyance direction of the object to be heated.
F27B 9/02 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity of multiple-track typeFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity of multiple-chamber typeCombinations of furnaces
F27B 9/06 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and chargeFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity electrically heated
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
39.
COIL STRUCTURE AND METHOD FOR MANUFACTURING SAME, MULTILAYER SUBSTRATE CIRCUIT USING COIL STRUCTURE, MAGNETIC DEVICE, AND COPPER FOIL WITH RESIN FOR COIL STRUCTURE
Provide are a coil structure, a multilayer circuit board, and a magnetic device with which it is possible to achieve excellent withstand voltage characteristics and low capacitance between coils without using a glass cloth. A coil structure C comprises: coil patterns 21, 22, 23 which are planar conductors each wound on a plane; and an insulating material 1 for providing insulation between the coil patterns 21, 22, 23. The coil patterns 21, 22, 23 and the insulating material 1 are alternately laminated. The insulating material 1 is a cured product of an insulating resin composition that does not contain glass cloth. A multilayer circuit board P includes the coil structure C. A magnetic device D is constituted by laminating a plurality of the coil structures C and the multilayer circuit boards P, and mounting a core 4 thereon.
The present disclosure is related to providing a polyamic acid that can form a polyimide exhibiting a low dielectric property and a low hygroscopic property, and a polyamic acid composition, polyimide, polyimide film, and printed circuit board that are produced by using the polyamic acid. A polyamic acid that is a product obtained by polyaddition reaction between an ester-type acid dianhydride (A) and at least two diamines (B), wherein a dimer diamine (B1) is contained at a molar ratio of 0.3 or more relative to an entirety of the diamine component.
This solder alloy can form, while containing Bi, a joint part which has heat-cycle resistance and falling impact resistance and in which occurrence of lift-off is suppressed. The solder alloy contains 35-65 mass% of Bi, 0.1-0.65 mass% of Sb, and 0.05-2 mass% of Ag, the remaining portion being Sn and unavoidable impurities.
A sheet conveyance guide installed in a conveying surface of a conveying path that is configured to convey a sheet. The sheet conveyance guide includes a transparent member having a light transparency and including a surface formed to be flush with the conveying surface, and a housing member including a housing portion to house the transparent member and a surface around the housing portion formed to be flush with the conveying surface. The transparent member includes an adhesion region to adhere the transparent member to an inner wall of the housing portion of the housing member, and a stress release region provided outside of the adhesion region in a width direction of the conveying path to release a stress generated in the transparent member.
An MMC converter includes three units of two-terminal arms on a P-terminal side, and three units of two-terminal arms on an N-terminal side. An inductive element between the arms on the P-terminal side and the arms on the N-terminal side includes a reactor provided with a UP coil and a UN coil concentrically wound around an iron-core leg, a reactor provided with a VP coil and a VN coil concentrically wound around an iron-core leg, and a reactor provided with a WP coil and a WN coil concentrically wound around an iron-core leg. Each of the coils is wound around in a direction such that the iron-core legs are excited by a flow-through current from the N terminal to the P terminal.
H02M 5/458 - Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02P 27/06 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using DC to AC converters or inverters
44.
JUNCTION BARRIER SCHOTTKY DIODE AND PRODUCTION METHOD THEREFOR
Provided is a junction barrier Schottky diode 1 equipped with an n-type semiconductor layer 11 having a plurality of trenches 111, a plurality of p-type semiconductor parts 12 disposed so as to be in contact with the inner surfaces of the trenches 111, and an anode electrode 13 disposed so as to be in contact with mesa-shaped portions 112 of the n-type semiconductor layer 11, wherein the p-type semiconductor parts 12 each comprise a first portion 121, which covers the inner surface of the trench 111, and a second portion 122, which covers the brims of the trench 111 in the first surface 113 of the n-type semiconductor layer 11.
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
A Schottky barrier diode includes a semiconductor layer of a first conductivity type including a wide-bandgap semiconductor and a trench defining a mesa portion on a first surface thereof, a high-resistance region under the trench of the semiconductor layer, the high-resistance region including an impurity of a second conductivity type different from the first conductivity type, an insulating film or a semiconductor film of the second conductivity type, the insulating film or semiconductor film covering at least a bottom surface among inner surfaces of the trench, an anode electrode on the semiconductor layer through the insulating film or the semiconductor film, the anode electrode being connected to the mesa portion, and a cathode electrode directly or through another layer on a second surface of the semiconductor layer on the opposite side to the first surface.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
46.
Solder alloy, joint portion, joining material, solder paste, joint structure, and electronic control device
A solder alloy includes 45 mass % or more and 63 mass % or less of Bi, 0.1 mass % or more and less than 0.7 mass % of Sb, 0.05 mass % or more and 1 mass % or less of In, and a balance including Sn.
This solder alloy can provide a joint part having heat cycle resistance and drop impact resistance, the solder alloy containing 45%-63% by mass of Bi, 0.1% by mass or more and less than 0.7% by mass of Sb, 0.05%-1% by mass of In, and the remainder made up of Sn and inevitable impurities, wherein the liquidus temperature is 170°C or less.
Reactor 10 includes the core 4, the coil 2 attached to the core 4, the resin member 5 covering a periphery of the core 4, and the fastening portion 53 fastening the external terminal 61 of the external device electrically connected to the coil 2. The external terminal 61 is connected to the lead wire 62 connecting the external terminal 61 and the external device. The lead wire 62 is wired linearly above the core 4 along the core 4 to which the coil 2 is not attached. The resin member 5 includes the guide portion 54 provided at an opposite of the fastening portion 53 so as to interpose the core 4 above which the lead wire 62 is wired and holding the lead wire 62 and the intermediate guide portion 55 provided between the fastening portion 53 and the guide portion 54 and holding the lead wire 62.
Provided is a mold core, a reactor having the mold core, and a manufacturing method of the mold core in which the leg portion connecting surfaces of the yoke portions are aligned at the same height and gaps are prevented from forming between the end surfaces of the leg portions and the leg portion connecting surfaces. The mold core 2 of the reactor 1 is made of a dust core and includes the yoke cores 41 for connecting a plurality of leg portions 32, and the yoke resins 42 for molding the yoke cores 41 by insert molding. The yoke cores 41 are divided into a plurality of core blocks 5 connected in a row without gaps, and the core blocks 5 include leg-portion-side blocks 61 that are connected to the leg portions 32 one-to-one.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
This solder alloy has a liquidus temperature of at most 170ºC and can form a joint part having heat cycle resistance and drop impact resistance. The solder alloy contains 45-63 mass% of Bi, 0.1-1 mass% of Sb, 0.05-1 mass% of Cu, and a total of 0.001-0.1 mass% of one or more selected from among Ni and Co, with the remainder consisting of Sn and inevitable impurities, and has a liquidus temperature of at most 170ºC.
This solder alloy makes it possible to form a joint part having heat cycle resistance and drop impact resistance, the solder alloy containing 45-63 mass% inclusive of Bi, 0.1-1 mass% inclusive of Sb, 0.05-1 mass% inclusive of In, and a total of 0.001-0.1 mass% inclusive of one or more elements selected from Ni and Co, with the remainder made up by Sn and unavoidable impurities.
Provided is a technology capable of realizing a new structure. A shield layer 50 is disposed on a first surface 11a or a third surface 13a of a case 10 of an electronic component unit (current sensor) while the shield layer 50 is not disposed on a second surface 12a. Thus, compared with a method for disposing the shield layer on the entire inner surface of the case 10, manufacturing cost can be reduced by limiting the disposition of the shield layer 50. In addition, the shield layer 50 is disposed on the first surface 11a or the third surface 13a in which the effect of the shield layer 50 is easily exerted, while the shield layer 50 is not disposed on the second surface 12a in which the effect of the shield layer 50 is reduced. Thus, it is possible to efficiently improve dV/dt characteristics (output characteristics) of the electronic component unit (current sensor).
H05K 9/00 - Screening of apparatus or components against electric or magnetic fields
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
G12B 17/02 - Screening from electric or magnetic fields, e.g. radio waves
Technologies for improving the quality of an electronic component unit are provided. A shield layer 50 is disposed on a first surface 11a, a second surface 12a, and a third surface 13a of a case 10 of an electronic component unit (electric current sensor). For the shield layer 50, various pastes (carbon paste and magnetic paste) are adopted. As the pastes can be freely applied to a desired location, an optimum shield structure can be constructed, making it possible to readily achieve improvements in both dV/dt characteristics and EMC characteristics. Further, the addition of the magnetic pastes makes it possible to provide a shield against radio noise bands (frequency bands on the order of 0.1 to 5.0 MHz). In addition, because the shield layer 50 is formed by means of a paste, construction is less expensive than with the use of metal shields (vacuum film formation by vapor deposition or sputtering).
A Schottky barrier diode includes an n-type semiconductor layer including a gallium oxide-based semiconductor, an insulating film including SiO2 and covering a portion of an upper surface of the n-type semiconductor layer, and an anode electrode which is connected to the upper surface of the n-type semiconductor layer to form a Schottky junction with the n-type semiconductor layer and at least a portion of an edge of which is located on the insulating film. The insulating film further includes a first layer in contact with the n-type semiconductor layer and a second layer on the first layer. A refractive index of the first layer is lower than a refractive index of the second layer. The n-type semiconductor layer further includes a guard ring surrounding a junction with the anode electrode.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
A Schottky barrier diode includes an n-type semiconductor layer including a gallium oxide-based semiconductor, an insulating film including SiO2 and covering a portion of an upper surface of the n-type semiconductor layer, and an anode electrode which is connected to the upper surface of the n-type semiconductor layer to form a Schottky junction with the n-type semiconductor layer and at least a portion of an edge of which is located on the insulating film. The insulating film further includes a first layer in contact with the n-type semiconductor layer and a second layer on the first layer. A refractive index of the first layer is lower than a refractive index of the second layer.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a conveying heating apparatus with reduced temperature interference between zones and also allowing for variety-switching work associated with a temperature drop to be performed rapidly. The conveying heating apparatus includes a heating apparatus in which a plurality of heating furnaces are arranged and which is configured to blow hot air against a workpiece by means of the heating furnaces, and a conveyor that brings the workpiece to the heating apparatus, wherein each of the heating furnaces comprises an upper furnace body and a lower furnace body, a box-shaped upper temperature regulation unit is disposed ahead or behind, in the conveying direction, the upper furnace body of at least a subset of the heating furnaces, a box-shaped lower temperature regulation unit is disposed ahead or behind, in the conveying direction, the lower furnace body of at least a subset of the heating furnaces, and each of the upper and lower temperature regulation units has a medium inlet and a medium outlet.
F27B 9/02 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity of multiple-track typeFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity of multiple-chamber typeCombinations of furnaces
F27B 9/12 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity with special arrangements for preheating or cooling the charge
F27D 9/00 - Cooling of furnaces or of charges therein
The present invention prevents temperature unevenness in an object to be heated. This conveying heating apparatus is provided with a heating device in which multiple heating furnaces are arranged and which is configured to blow hot air by the heating furnaces to an object to be heated, and a conveyor for carrying the object into the heating device, wherein: each of the heating furnaces is formed from an upper furnace body and a lower furnace body; each heating furnace is provided with fans respectively provided in the upper furnace body and lower furnace body, pressurizing chambers respectively provided in the upper furnace body and lower furnace body, and flow straightening plates which are provided in the pressurizing chambers and to which hot air is blown from the fans; and the flow straightening plates are provided only on the outer side of the outer circumference of the fans.
Provided is a thermosetting resin composition capable of reducing the dielectric loss tangent while having high permittivity. A thermosetting resin composition containing (A) an epoxy compound, (B) a compound having a maleimide group, (C) an inorganic filler, and (D) a thermosetting catalyst, the (C) inorganic filler containing (C1) metal oxide particles, and the (C1) metal oxide particles constituting 50-90 mass% inclusive of the solids fraction of the thermosetting resin composition.
C08G 59/40 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the curing agents used
Provided is a core positioning technology. A current sensor 100 comprises: a pair of core members 104 that are positioned assembled together in a ring shape around a primary conductor, in a condition in which respective end surfaces 104a of both end sections of each have been made to face each other; a case body 102 that has an insertion section 103 through which the primary conductor can be inserted, and accommodates the pair of core members 104 in the interior thereof via an opening that is formed in a ring shape around the insertion section 103; spring spacers 108 that produce a force pressing the pair of core members 104 together in the facing direction from outside surfaces thereof, which are on the opposite sides from the respective end surfaces 104a; gap spacers 106 that are respectively positioned in locations where the respective end surfaces 104a of the pair of core members 104 are facing, receive the respective end sections of the core members into pairs of recessed sections 106a, and in this condition form gaps between the end surfaces 104a and suppress displacement of the core members 104; and a circuit board 110.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
62.
COIL COMPONENT AND MANUFACTURING METHOD OF THE COIL COMPONENT
The coil component includes a plurality of coils 2 including round wires 22 arranged in alignment and wound in multiple layers and a bobbin 3 around which the coils 2 are wound. The bobbin 3 includes a winding portion 21 around which the coils are wound, a flange portion 22 provided at both ends of the winding portion 21, and the wall portion provided between the adjacent coils 2 and standing from the winding portion 21. The flange portion 22 includes an inclined guide 222 that spreads toward an opening 221. The winding portion 31 includes the groove portion 312 in which the round wire 22 as the first layer is fitted, and a step 313 provided between the flange portion 32 and the groove portion 312 and protrudes from the winding portion 31. The wall portion 33 includes an inclined side surface 332.
Provided are a junction barrier Schottky diode having a trench structure that has high surge resistance and reduced energy loss during switching operation, and a method for manufacturing the same. An embodiment provides a junction barrier Schottky diode 1 comprising: an n-type semiconductor layer 11 having a plurality of trenches 111; a p-type semiconductor film 12 provided in contact with an inner surface of the a plurality of trenches 111; an anode electrode 13 which is provided on a first surface 113 of the n-type semiconductor layer 11 and in contact with a mesa-shaped portion 112 of the n-type semiconductor layer 11, a part of the anode electrode 13 being covered by the p-type semiconductor film 12 in the plurality of trenches 111; and a cathode electrode 14 provided on a second surface 114 of the n-type semiconductor layer 11 directly or with another layer therebetween.
H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
3-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/808 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate
65.
SOLDER ALLOY, SOLDER JOINING MEMBER, SOLDER PASTE, AND SEMICONDUCTOR PACKAGE
Provided are a solder alloy, a solder joining member, a solder paste, and a semiconductor package with which it is possible to suppress any separation of a solder joining part and a semiconductor element at the interface between these two components. This solder alloy contains 1.1-8 mass% inclusive of Cu, 6-20 mass% inclusive of Sb, 0.01-0.5 mass% inclusive of Ni, and 0.001-1 mass% of Co, the balance being Sn.
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
B23K 35/22 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
C22C 13/02 - Alloys based on tin with antimony or bismuth as the next major constituent
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
66.
SOLDER ALLOY, SOLDER BONDING MATERIAL, SOLDER PASTE, AND SEMICONDUCTOR PACKAGE
A solder alloy includes 1.1% by mass or more and 8% by mass or less of Cu; 6% by mass or more and 20% by mass or less of Sb; 0.01% by mass or more and 0.5% by mass or less of Ni; and 0.001% by mass or more and 1% by mass or less of Co; a balance being Sn. An amount of Cu (% by mass) and an amount of Ni (% by mass) satisfies following formula: the amount of Ni/(the amount of Cu+the amount of Ni)<0.10.
3-based single crystal in a reaction chamber of an HVPE apparatus. When the semiconductor substrate is placed so that the growth base surface faces upward, an inlet for a dopant-including gas into the space is positioned higher than an inlet for an oxygen-including gas into the space and an inlet for a Ga chloride gas into the space is positioned higher than the inlet for the dopant-including gas into the space. When the semiconductor substrate is placed so that the growth base surface faces downward, the inlet for the dopant-including gas into the space is positioned higher than the inlet for the Ga chloride gas into the space and the inlet for the oxygen-including gas into the space is positioned higher than the inlet for the dopant-including gas into the space.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
Provided is a bonding material that is capable of suppressing the occurrence of cracking in a bonding part and capable of suppressing the occurrence of cracking in a semiconductor element even when under the load of a particularly high temperature, said bonding material having a base material part and a solder layer that covers the upper surface and the lower surface of the base material part, wherein the base material part has: a core base material; and a first metal layer and a second metal layer that are on at least one surface of the core base material in this order from the core base material side, and the solder layer comprises a solder alloy containing 1-8 mass% of Cu, 10-30 mass% of Sb, 0.01-0.5 mass% of Ni, and 0.001-0.5 mass% of Co, with the remainder being Sn.
H01L 21/52 - Mounting semiconductor bodies in containers
B23K 35/14 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape not specially designed for use as electrodes for soldering
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
C22C 13/02 - Alloys based on tin with antimony or bismuth as the next major constituent
69.
Solder composition and method for manufacturing flexible circuit board
B23K 35/36 - Selection of non-metallic compositions, e.g. coatings, fluxesSelection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
H01L 29/201 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds
Provided is a gallium oxide-based semiconductor substrate configured to allow the formation, by HVPE, of a gallium oxide-based epitaxial film having a small film thickness distribution, a small donor concentration distribution, and a low crystal defect density. Also provided are a semiconductor wafer including the semiconductor substrate and the epitaxial film, and a method for manufacturing the semiconductor wafer. As one embodiment, provided is a semiconductor substrate 10 in which at least one main surface thereof is a crystal growth base surface 11. The semiconductor substrate 10 comprises a single crystal of a gallium oxide-based semiconductor. The growth base surface 11 is the (001) plane. In a continuous region of 70 area% or more of the growth base surface 11, the off angle in the [010] direction is in the range from greater than -0.3° to -0.01°, or in the range from 0.01° to smaller than 0.3°. In said region of the growth base surface 11, the off angle in the [001] direction is in the range from -1° to 1°. The diameter of the semiconductor substrate 10 is 2 inches or more.
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
3-based semiconductor and stacked on the substrate, a first electrode connected to a surface of the substrate on an opposite side to the epitaxial layer, and a second electrode connected to a surface of the epitaxial layer on an opposite side to the substrate and including a field plate portion at an outer peripheral portion. The semiconductor element is fixed onto the raised portion. An outer peripheral portion of the epitaxial layer, which is located on the outer side of the field plate portion, is located directly above a flat portion of the lead frame that is a portion at which the raised portion is not provided.
3-based semiconductor and located on the substrate, fixing the epitaxial layer side of the semiconductor wafer to a support substrate, thinning the substrate of the semiconductor wafer fixed to the support substrate, after the thinning of the substrate, forming an electrode on a lower surface of the substrate, bonding or forming a support metal layer on a lower surface of the electrode of the semiconductor wafer, and dicing the semiconductor wafer into individual pieces, thereby obtaining plural semiconductor elements each including the support metal layer. Thermal conductivity of the support metal layer is higher than thermal conductivity of the substrate.
Provided is a conveying heating apparatus with which it is possible to prevent generation of waste metal and suppress variations in in-plane temperature distribution of a substrate. This conveying heating apparatus comprises: a heating device which has arrayed therein one or more heating furnaces and which is configured to cause the heating furnaces to blow hot air onto an object to be heated; and a conveyance conveyor which conveys a substrate into the heating device. The conveyance conveyor is provided with: a conveyance chain that comprises opposing link plates, a shaft or roller disposed between the link plates, and an attachment for mounting a substrate thereon; a metal rail which has a U-shaped cross-section formed by contiguously connecting a top surface, an under surface, and a lateral surface, and in which the conveyance chain is disposed in a space between the top surface and the under surface; and a plurality of rod-like underside resin guides which comprise a heat-resistant, non-conductive resin and are inserted in a groove formed in the under surface of the metal rail so as to extend in the conveyance direction and which are brought into contact with the under surface of the shaft or roller.
B65G 21/22 - Rails or the like engaging sliding elements or rollers attached to load-carriers or traction elements
F27B 9/24 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatmentFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path being carried by a conveyor
F27B 9/30 - Details, accessories or equipment specially adapted for furnaces of these types
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
By containing 0.1-3 mass% Ag, 8-15 mass% Cu and 30-40 mass% Sb, and the remainder being Sn, a solder alloy is provided which, even in high temperature environments, suppresses re-melting of a solder joint that is formed.
C22C 13/02 - Alloys based on tin with antimony or bismuth as the next major constituent
C22C 30/04 - Alloys containing less than 50% by weight of each constituent containing tin or lead
B23K 35/22 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
A reactor that can suppress an increase in ripple current even when electric current imbalance occurs is provided. A reactor 10 includes an annular core 1 formed by a magnetic body, and two coils 2 which are attached and magnetically joined to the annular core 1 and which generate magnetic fluxes in directions opposite to each other. The differential permeability of the annular core 1 at 5000 A/m is equal to or more than 30% of the maximum differential permeability of the annular core 1.
Provided are: a photosensitive resin composition from which a photocured product having excellent film sticking prevention properties and bending properties without impairing basic characteristics of insulation reliability and heat resistance can be obtained; and a wiring board having a photocured film of said photosensitive resin composition. This photosensitive resin composition contains (A) a carboxyl group-containing photosensitive resin, (B) a photopolymerization initiator, (C) a reactive diluent, (D) an epoxy compound, (E) urethane beads, and (F) a fine powdery inorganic filler.
C08G 59/68 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the catalysts used
A drive circuit is provided. When the switching element is in turn-on state and a collector-emitter voltage of the switching element is equal to or higher than a first predetermined voltage value, the first diode is turned on; the first transistor and the second transistor are turned on; and, after a mask time in which a first capacitor is started to be charged with a current from a current source and a voltage value at two ends becomes equal to or higher than a second predetermined voltage value higher than the first predetermined voltage value, an abnormality detection signal is output to the control unit. The control unit stops an output of the pulse signal to the switching element in response to the abnormality detection signal.
H03K 17/0812 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
A reactor that suppresses the transmission of the vibration of the core and the vibration of the coil and that reduces the vibration thereof is provided. The reactor includes a coil 3 with a cylindrical shape and a core 1 having legs 12 around which the coil 3 is wound. The core includes a core mold resin 2 which covers at least a part of the core 1, and a core holder which holds the core 1. The coil 3 includes a coil mold resin 4 which covers at least a part of the coil 3, and a coil holder which holds the coil 3. The core holder and the coil holder independently hold the core 1 and the coil 3, respectively, and a gap S1 is provided between the legs 12 and the inner circumferential surface of the coil 3.
A high-side driver circuit is a circuit that drives a power semiconductor switch. The high-side driver circuit comprises a main switch N-channel MOSFET that has a drain terminal that is connected to a plus-side Vdc of a power supply and has a source terminal that is connected to an OUT terminal for a signal that drives the power semiconductor switch, a charge storage circuit that stores charge from the Vdc, and a voltage detection-capable switch that detects the voltage difference between an output terminal of the charge storage circuit and the Vdc and, upon detecting that the output terminal voltage of the charge storage circuit is at least a specific voltage higher than the voltage of a plus-side Vcc of the power supply, applies part or all of the output voltage of the charge storage circuit to a gate terminal of the main switch N-channel MOSFET.
The present invention provides a photosensitive resin composition which has excellent dispersibility during storage and preservation, is capable of reducing the water absorption coefficient, and is capable of forming a cured film having excellent bendability and insulation reliability. The photosensitive resin composition comprises (A) a photosensitive resin containing carboxyl groups, (B) an epoxy compound, (C) urethane beads, (D) a photopolymerization initiator, and (E) a reactive diluent,. The urethane beads (C) are coated by silica, and at least 20 mass% of 100 mass% of the silica is hydrophobic silica.
01 - Chemical and biological materials for industrial, scientific and agricultural use
06 - Common metals and ores; objects made of metal
07 - Machines and machine tools
09 - Scientific and electric apparatus and instruments
17 - Rubber and plastic; packing and insulating materials
37 - Construction and mining; installation and repair services
Goods & Services
Soldering fluxes; Soldering chemicals; Brazing fluxes; Brazing preparations; chemicals for use in industry; surface-active chemical agents; adhesives for industrial purpose; chemical coatings used in the manufacture of printed circuit boards; Phosphor; solder resist; liquid solder-resists; soldering paste; solder mask [chemical preparations]; antioxidants for use in manufacture; conductive adhesives for industrial purposes; epoxy resins, unprocessed; plastics, unprocessed; dry film resist; photoresists. Alloys of common metal; Powder of non-ferrous metals and their alloys; Non-ferrous metals and their alloys; solders; solder alloys; lead-free solder; soldering wire of metal; silver solder; gold solder; Solder bar; solder wire. Vending machines; buttons for vending machines; metalworking machines; electric soldering apparatus; electric welding apparatus; washing machines for soldering pallets for industrial purposes; soldering dross separators; electric soldering bath; nitrogen generators; dust collecting machines for chemical processing; flux collecting apparatus for soldering process; industrial printing machines; painting machines; spraying machines; machinery for spray coating; flux applying apparatus for soldering process; plastic processing machines; Alternator; DC generator; motors other than for land vehicles; starters for motors and engines; semi-conductor manufacturing apparatus. Physical and chemical laboratory apparatus and instruments; photographic apparatus and instruments; satellites for scientific purposes; coils, electric; electromagnetic coils; transformers [electricity]; condensers [capacitors]; converters, electric; switches, electric; fuses; resistances, electric; choking coils [impedance]; inductors [electricity]; inverters [electricity]; usb adapters, cable adapters; electric power distribution units, power distribution or control machines and apparatus; battery chargers; Electric power supply units; Electric reactors; piezoelectric transformer; power modules; phase modifiers; rotary converters; batteries, electric; solar batteries; batteries; measuring or testing machines and instruments; electric or magnetic meters and testers; current sensors; electric circuit testers; electric wires and cables; resistance wires; limiters [electricity]; sound transmitting apparatus; sound recording apparatus; sound reproduction apparatus; audio mixers; mounting racks for installing audio systems; headphones; headsets; sound signal converter; microphones; modems; aerials; telecommunications apparatus and instruments; wireless communication devices; broadcasting equipment; network controlling apparatus; data communication apparatus and instruments; wireless intercoms; digital signs; computer programs, recorded; computer software, recorded; computer programs [downloadable software]; monitors [computer programs]; monitoring apparatus, other than for medical purposes; computers; computer peripheral devices; interfaces for computers; printed electronic circuits; integrated circuits; printed circuit boards; light-emitting diodes [LED]; semi-conductors; semiconductor wafers; semiconductor elements; semiconductor substrate; magnetic cores; electrodes; electronic publications; detecting and warning apparatus of abnormality of home for elderly people living alone, comprising of sensors and computer networks, etc.; circuit modules for gate driver control. Insulating materials; dielectrics [insulators]; insulating paints; insulating ink; insulating films; insulators; insulating tapes. Installation, repair and maintenance of telecommunications apparatus and instruments; installation, repair and maintenance of audio mixers; installation, repair and maintenance of broadcasting equipment; installation, repair and maintenance of wireless communication devices; installation, repair and maintenance of network controlling apparatus; installation, repair and maintenance of metalworking machines; installation, repair and maintenance of electric soldering apparatus; installation, repair and maintenance of nitrogen generators; installation, repair and maintenance of semiconductor manufacturing machines; installation, repair and maintenance of vending machines.
84.
Schottky barrier diode with high withstand voltage
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
A solder composition of the invention contains: a flux composition containing (A) a rosin resin, (B) an activator, (C) an imidazoline compound having a phenyl group, and (D) an antioxidant; and (E) solder powder, in which the (B) component contains (B1) an organic acid, the (B1) component contains at least one selected from the group consisting of (B11) 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, and 1,4-dihydroxy-2-naphthoic acid, and the (C) component is at least one selected from the group consisting of 2-phenylimidazoline and 2-benzylimidazoline.
B23K 35/36 - Selection of non-metallic compositions, e.g. coatings, fluxesSelection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
A terminal block includes a terminal and a base having a terminal attachment part to which the terminal is attached. The terminal includes a coupling part coupled to the terminal attachment part. The terminal attachment part is formed with an insertion hole extending in a first direction and into which the coupling part is inserted, and a fitting hole communicating with the insertion hole. The coupling part includes a click part configured to fit into the fitting hole, and the click part projects toward the fitting hole by being bent at a root of the click part along a straight line substantially parallel to the first direction.
The present disclosure provides a photosensitive dry film enabling a photocured film being excellent in insulation reliability and resolution and having a frosted appearance to be obtained. A photosensitive dry film including a support film having a first main surface and a second main surface opposite to the first main surface, and a photosensitive resin layer provided on the first main surface, in which the first main surface has an irregular surface formed by chemical etching.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
G03F 7/033 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
In the present invention, a MMC converter comprises three two-terminal arms on a P terminal side, and another three on an N-terminal side. An induction element between the P-terminal-side and the N-terminal-side arms includes a reactor provided with UP, UN coils wound concentrically on an iron core leg, a reactor provided with VP, VN coils wound concentrically on the iron core leg, and a reactor provided with WP, WN coils wound concentrically on the iron core leg. A first terminal of the UP coil and a second terminal of the UN coil, a first terminal of the VP coil and a second terminal of the VN coil, and a first terminal of the WP coil and a second terminal of the WN coil are connected. A second terminal of the UP coil is connected to a first terminal of a UP arm, a first terminal of the UN coil is connected to a second terminal of a UN arm, a second terminal of the VP coil is connected to a first terminal of a VP arm, a first terminal of the VN coil is connected to a second terminal of a VN arm, a second terminal of the WP coil is connected to a first terminal of a WP arm, and a first terminal of the WN coil is connected to a second terminal of a WN arm. Each coil is wound in the direction in which the iron core leg is excited by current passing through from the N terminal to the P terminal.
22222 concentration threshold value; and a notification unit 30 that notifies a first message indicating that the room is a poorly ventilated closed space for infectious disease control on the basis of the first notification signal.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
93.
FLUX, SOLDER PASTE, ELECTRONIC CIRCUIT MOUNTING BOARD, AND ELECTRONIC CONTROL DEVICE
In order to provide a flux, a solder paste, an electronic circuit mounting board, and an electronic control device that can suppress whiskering in a solder-joined section and demonstrate good solderability and storage stability, this flux includes a base resin, an organic acid, a heterocyclic compound, and a solvent, wherein in relation to the total mass of the flux, greater than or equal to 0.05 mass% and less than 15 mass% of a compound represented by general formula (1) is included as the organic acid, and in relation to the total mass of the flux, greater than or equal to 0.05 mass% and less than 15 mass% of the heterocyclic compound is included. (In general formula (1), X is at least one option selected from among one or more carboxyl groups, an alkyl group, and a hydrogen atom. These substituents and hydrogen atom are not limited in location or number, and X may be one or a combination of several of these.)
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
B23K 35/363 - Selection of compositions of fluxes for soldering or brazing
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
Provided is a vending machine control device having higher safety against electrical impact from the outside than when electrical energy stored in a power storage part is not used for unlocking an electric lock. A vending machine 2 comprises: a mechanical lock 13 for mechanically locking and unlocking a door of the vending machine 2 by a mechanical key 140; an electromagnetic lock 11 for electrically locking and unlocking the door; a capacitor 121 for storing electrical energy; and a controller 200 for performing control to unlock the electric lock 11 by the electrical energy stored in the capacitor 121.
An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has an outer peripheral trench surrounding the anode electrode in a plan view. The surface of the drift layer positioned between the anode electrode and the outer peripheral trench is covered with a semiconductor layer having a conductivity type opposite to that of the drift layer.
An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
2323233-based single crystal, on the growth substrate surface 11 of the semiconductor substrate 10, wherein the flow inlet of the dopant-containing gas to the space 24 is positioned higher than the flow inlet of the oxygen-containing gas to the space 24, and the flow inlet of the Ga chloride gas to the space 24 is positioned higher than the flow inlet of the dopant-containing gas to the space 24.
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
3-based single crystal substrate having a crack density of less than 0.05 cracks/cm can be obtained that has as a principal surface thereof a surface rotated 10-150° from the (100) plane, when a rotation direction from the (100) plane to the (001) plane via the (101) plane is defined as positive, having the [010] axis as the rotation axis.
23233-based semiconductor; a step for fixing an epitaxial layer 12 side of the semiconductor wafer 10 to a support substrate 21; a step for making a substrate 11 of the semiconductor wafer 10 thinner; a step for forming a cathode electrode 16 on the bottom surface of the substrate 11; a step for adhering a metal plate 23 on the bottom surface of the cathode electrode 16; and a step for obtaining a plurality of SBD1 each comprising the metal plate 23 by dicing the semiconductor wafer 10 to make individual pieces.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/52 - Mounting semiconductor bodies in containers
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/301 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions
Provided is a gate drive circuit that is provided with an active clamp for protecting portions between a collector and an emitter of an IGBT, that suppresses heat generation of a constant voltage diode, and that generates a limited amount of noise. This gate drive circuit is provided with a clamp circuit that clamps a voltage between a collector (hereinafter referred to as C) and an emitter (hereinafter referred to as E) of a power semiconductor element. The clamp circuit has: a constant voltage diode (hereinafter referred to as D) connected to C; an impedance circuit connected between the other end of the constant voltage D and a minus power supply; a first drawing circuit that has one end connected to a connection point between the constant voltage D and the impedance circuit and that comprises a first switch (hereinafter referred to as SW) and a first resistor; a second drawing circuit that comprises the second SW and a second resistor that are connected in a similar manner to the connection regarding the first drawing circuit; and a detection circuit that, when a change rate of a C voltage has exceeded a threshold value, outputs a SW open signal. When the SW open signal has been received, the second SW is changed from a conduction state to a non-conduction state.
