A solder alloy includes 35 mass % or more and 65 mass % or less of Bi, 0.1 mass % or more and 0.65 mass % or less of Sb, 0.05 mass % or more and 2 mass % or less of Ag, and a balance including Sn and an inevitable impurity.
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
B23K 35/02 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par des propriétés mécaniques, p. ex. par la forme
B23K 35/36 - Emploi de compositions non métalliques spécifiées, p. ex. comme enrobages, comme fluxEmploi de matériaux de brasage ou de soudage spécifiés associé à l'emploi de compositions non métalliques spécifiées, dans lequel l'emploi des deux matériaux est important
Provided are: a molded coil which is inhibited from suffering resin leakage to an opening surface and has excellent heat dissipation properties; and a reactor. A molded coil 1 includes a coil-covering resin 3 which covers a part or the entirety of a coil 2. The coil-covering resin 3 comprises: an edge surface plate 71 which covers a part or the entirety of a cylinder edge surface 25; a side surface plate 72 which is connected to the edge surface plate 71 and covers a part or the entirety of a side surface 27; and a molding resin 9. The side surface 27 adjoins both an opening surface 23, which is uncovered with the coil-covering resin 3, and the cylinder edge surface 25. The edge surface plate 71 has a slit 8 extending from a portion of a side edge 711 of the side surface plate 71 which is located at a corner 722 of the side surface plate 72, along a vertical side 724, which is the boundary between the edge surface plate 71 and the side surface plate 72. The side surface plate 72 is separated from the edge surface plate 71 by the slit 8, but is connected to the edge surface plate 71 at the end 84 of the slit 8.
Provided is a coil device that has good heat dissipation properties and is reduced in size and weight. A magnetic core 2 according to one embodiment of the present invention comprises a first core 20. The first core 20 has a first central leg 21, an annular part surrounding the first central leg 21, and a first yoke 23 connecting the first central leg 21 and the annular part at one end of the first core 20. The end face of the first central leg 21 and the end face of the annular part are formed on the same plane. An annular recessed part capable of housing a coil is formed between the first central leg 21 and the annular part.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre euxFixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
Provided are: a molded coil manufacturing method with which the length of a coil in a winding axis direction can be adjusted while suppressing deformation of the coil; and a molded coil. The molded coil manufacturing method for mold fabricating a coil comprises: a winding step in which a coil 2 is wound so as to make the length of the coil in a winding axis direction longer than a desired length; an accommodation step in which the coil 2 is accommodated in a mold; a pressing step in which, after the accommodation step, the coil 2 is pressed in the winding axis direction by a pressing member 9; and an injection step in which, after the pressing step, a resin is injected into the mold. The coil 2 has a pressing surface 26 which is one end surface that is orthogonal to the winding axis. In the pressing step, the pressing member 9 presses the pressing surface 26, and in the injection step, the resin is injected toward the pressing surface 26. The pressing surface 26 is pressed by the pressing member 9 and by the injection pressure of the resin.
A semiconductor substrate includes at least one main surface as a crystal growth base surface, and a gallium oxide-based semiconductor single crystal. The growth base surface is a (001) plane. An off angle in a [010] direction in a continuous region of not less than 70 area % of the growth base surface is in a range of more than −0.3° and not more than −0.01°, or in a range of not less than 0.01° and less than 0.3°. An off angle in a [001] direction in the region of the growth base surface is in a range of not less than −1° and not more than 1°. The semiconductor substrate has a diameter of not less than 2 inches.
Provided is a drive circuit apparatus capable of ensuring satisfactory insulation between an input-side component and an output-side component. In the present invention, a gate driver is provided with: a driver substrate 101 that can be mounted on an IGBT module which is an external device to be driven; input-side wiring patterns 301, 302 arranged on the driver substrate 101; output-side wiring patterns 303, 304 arranged on the driver substrate 101; and a plurality of slits S1-S7 that have different shapes and that are formed through the driver substrate 101 at positions intersecting lines L1, L2, L3 (virtual lines) which connect the input-side wiring patterns 301, 302 and the output-side wiring patterns 303, 304 with straight lines (arbitrarily defined straight lines, for example, straight lines having the shortest distance or a distance longer than the shortest distance).
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
A semiconductor substrate includes at least one main surface as a crystal growth base surface, and a gallium oxide-based semiconductor single crystal. The growth base surface is a (001) plane. An off angle in a [010] direction in a continuous region of not less than 70 area % of the growth base surface is in a range of more than −0.3° and not more than −0.01°, or in a range of not less than 0.010 and less than 0.3°. An off angle in a [001] direction in the region of the growth base surface is in a range of not less than −1° and not more than 1°. The semiconductor substrate has a diameter of not less than 2 inches.
The present disclosure is related to providing a polyamic acid that can form a polyimide exhibiting a low dielectric property and high heat resistance and that has good film formability, and a polyamic acid composition, polyimide, polyimide film, and printed circuit board that are produced by using this polyamic acid. A polyamic acid that is a product obtained by polyaddition reaction between a tetracarboxylic dianhydride (A) and at least two diamines (B), wherein the at least two diamines (B) contain a diamine having a fluorene skeleton (B1) and a dimer diamine (B2).
In the present invention, the temperature drop in a buffer part between zones is prevented. This conveying heating apparatus is provided with: a heating device in which a plurality of heating furnaces are arranged and which is configured so as to blow hot air to an object to be heated by the heating furnaces; a buffer part which is present between the heating furnaces; a carrying conveyor that conveys the object to be heated; and a tubular infrared lamp heater provided in the buffer part so that the longitudinal direction thereof crosses the conveyance direction of the object to be heated.
F27B 9/36 - Aménagement des dispositifs de chauffage
F27B 9/02 - Fours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité à trajets multiplesFours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité à plusieurs chambresCombinaisons de fours
F27B 9/06 - Fours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité chauffés sans contact entre gaz de combustion et la chargeFours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité chauffés électriquement
COIL STRUCTURE AND METHOD FOR MANUFACTURING SAME, MULTILAYER SUBSTRATE CIRCUIT USING COIL STRUCTURE, MAGNETIC DEVICE, AND COPPER FOIL WITH RESIN FOR COIL STRUCTURE
Provide are a coil structure, a multilayer circuit board, and a magnetic device with which it is possible to achieve excellent withstand voltage characteristics and low capacitance between coils without using a glass cloth. A coil structure C comprises: coil patterns 21, 22, 23 which are planar conductors each wound on a plane; and an insulating material 1 for providing insulation between the coil patterns 21, 22, 23. The coil patterns 21, 22, 23 and the insulating material 1 are alternately laminated. The insulating material 1 is a cured product of an insulating resin composition that does not contain glass cloth. A multilayer circuit board P includes the coil structure C. A magnetic device D is constituted by laminating a plurality of the coil structures C and the multilayer circuit boards P, and mounting a core 4 thereon.
H01F 27/32 - Isolation des bobines, des enroulements, ou de leurs éléments
H01F 17/00 - Inductances fixes du type pour signaux
H01F 17/04 - Inductances fixes du type pour signaux avec noyau magnétique
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p. ex. une résistance, un condensateur, une inductance imprimés
The present disclosure is related to providing a polyamic acid that can form a polyimide exhibiting a low dielectric property and a low hygroscopic property, and a polyamic acid composition, polyimide, polyimide film, and printed circuit board that are produced by using the polyamic acid. A polyamic acid that is a product obtained by polyaddition reaction between an ester-type acid dianhydride (A) and at least two diamines (B), wherein a dimer diamine (B1) is contained at a molar ratio of 0.3 or more relative to an entirety of the diamine component.
This solder alloy can form, while containing Bi, a joint part which has heat-cycle resistance and falling impact resistance and in which occurrence of lift-off is suppressed. The solder alloy contains 35-65 mass% of Bi, 0.1-0.65 mass% of Sb, and 0.05-2 mass% of Ag, the remaining portion being Sn and unavoidable impurities.
A sheet conveyance guide installed in a conveying surface of a conveying path that is configured to convey a sheet. The sheet conveyance guide includes a transparent member having a light transparency and including a surface formed to be flush with the conveying surface, and a housing member including a housing portion to house the transparent member and a surface around the housing portion formed to be flush with the conveying surface. The transparent member includes an adhesion region to adhere the transparent member to an inner wall of the housing portion of the housing member, and a stress release region provided outside of the adhesion region in a width direction of the conveying path to release a stress generated in the transparent member.
An MMC converter includes three units of two-terminal arms on a P-terminal side, and three units of two-terminal arms on an N-terminal side. An inductive element between the arms on the P-terminal side and the arms on the N-terminal side includes a reactor provided with a UP coil and a UN coil concentrically wound around an iron-core leg, a reactor provided with a VP coil and a VN coil concentrically wound around an iron-core leg, and a reactor provided with a WP coil and a WN coil concentrically wound around an iron-core leg. Each of the coils is wound around in a direction such that a first terminal of the UP coil and a second terminal of the UN coil are connected, a first terminal of the VP coil and a second terminal of the VN coil are connected, and a first terminal of the WP coil and a second terminal of the WN coil are connected, then a second terminal of the UP coil is connected to a first terminal of a UP arm, a first terminal of the UN coil is connected to a second terminal of a UN arm, a second terminal of the VP coil is connected to a first terminal of a VP arm, a first terminal of the VN coil is connected to a second terminal of a VN arm, a second terminal of the WP coil is connected to a first terminal of a WP arm, and a first terminal of the WN coil is connected to a second terminal of a WN arm, and thereby the iron-core legs are excited by a flow-through current from the N terminal to the P terminal.
H02P 27/06 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p. ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs
15.
JUNCTION BARRIER SCHOTTKY DIODE AND PRODUCTION METHOD THEREFOR
Provided is a junction barrier Schottky diode 1 equipped with an n-type semiconductor layer 11 having a plurality of trenches 111, a plurality of p-type semiconductor parts 12 disposed so as to be in contact with the inner surfaces of the trenches 111, and an anode electrode 13 disposed so as to be in contact with mesa-shaped portions 112 of the n-type semiconductor layer 11, wherein the p-type semiconductor parts 12 each comprise a first portion 121, which covers the inner surface of the trench 111, and a second portion 122, which covers the brims of the trench 111 in the first surface 113 of the n-type semiconductor layer 11.
H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
A Schottky barrier diode includes a semiconductor layer of a first conductivity type including a wide-bandgap semiconductor and a trench defining a mesa portion on a first surface thereof, a high-resistance region under the trench of the semiconductor layer, the high-resistance region including an impurity of a second conductivity type different from the first conductivity type, an insulating film or a semiconductor film of the second conductivity type, the insulating film or semiconductor film covering at least a bottom surface among inner surfaces of the trench, an anode electrode on the semiconductor layer through the insulating film or the semiconductor film, the anode electrode being connected to the mesa portion, and a cathode electrode directly or through another layer on a second surface of the semiconductor layer on the opposite side to the first surface.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
17.
SOLDER ALLOY, JOINT PORTION, JOINING MATERIAL, SOLDER PASTE, JOINT STRUCTURE, AND ELECTRONIC CONTROL DEVICE
A solder alloy includes 45 mass % or more and 63 mass % or less of Bi, 0.1 mass % or more and less than 0.7 mass % of Sb, 0.05 mass % or more and 1 mass % or less of In, and a balance including Sn.
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
B23K 35/02 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par des propriétés mécaniques, p. ex. par la forme
C22C 12/00 - Alliages à base d'antimoine ou de bismuth
C22C 13/02 - Alliages à base d'étain avec l'antimoine ou le bismuth comme second constituant majeur
18.
SOLDER ALLOY, JOINT PART, JOINING MATERIAL, SOLDER PASTE, JOINT STRUCTURE, AND ELECTRONIC CONTROL DEVICE
This solder alloy can provide a joint part having heat cycle resistance and drop impact resistance, the solder alloy containing 45%-63% by mass of Bi, 0.1% by mass or more and less than 0.7% by mass of Sb, 0.05%-1% by mass of In, and the remainder made up of Sn and inevitable impurities, wherein the liquidus temperature is 170°C or less.
Reactor 10 includes the core 4, the coil 2 attached to the core 4, the resin member 5 covering a periphery of the core 4, and the fastening portion 53 fastening the external terminal 61 of the external device electrically connected to the coil 2. The external terminal 61 is connected to the lead wire 62 connecting the external terminal 61 and the external device. The lead wire 62 is wired linearly above the core 4 along the core 4 to which the coil 2 is not attached. The resin member 5 includes the guide portion 54 provided at an opposite of the fastening portion 53 so as to interpose the core 4 above which the lead wire 62 is wired and holding the lead wire 62 and the intermediate guide portion 55 provided between the fastening portion 53 and the guide portion 54 and holding the lead wire 62.
H01F 37/00 - Inductances fixes non couvertes par le groupe
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre euxFixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
20.
MOLD CORE, REACTOR, AND MOLD CORE MANUFACTURING METHOD
Provided is a mold core, a reactor having the mold core, and a manufacturing method of the mold core in which the leg portion connecting surfaces of the yoke portions are aligned at the same height and gaps are prevented from forming between the end surfaces of the leg portions and the leg portion connecting surfaces. The mold core 2 of the reactor 1 is made of a dust core and includes the yoke cores 41 for connecting a plurality of leg portions 32, and the yoke resins 42 for molding the yoke cores 41 by insert molding. The yoke cores 41 are divided into a plurality of core blocks 5 connected in a row without gaps, and the core blocks 5 include leg-portion-side blocks 61 that are connected to the leg portions 32 one-to-one.
H01F 27/255 - Noyaux magnétiques fabriqués à partir de particules
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
This solder alloy has a liquidus temperature of at most 170ºC and can form a joint part having heat cycle resistance and drop impact resistance. The solder alloy contains 45-63 mass% of Bi, 0.1-1 mass% of Sb, 0.05-1 mass% of Cu, and a total of 0.001-0.1 mass% of one or more selected from among Ni and Co, with the remainder consisting of Sn and inevitable impurities, and has a liquidus temperature of at most 170ºC.
This solder alloy makes it possible to form a joint part having heat cycle resistance and drop impact resistance, the solder alloy containing 45-63 mass% inclusive of Bi, 0.1-1 mass% inclusive of Sb, 0.05-1 mass% inclusive of In, and a total of 0.001-0.1 mass% inclusive of one or more elements selected from Ni and Co, with the remainder made up by Sn and unavoidable impurities.
Provided is a technology capable of realizing a new structure. A shield layer 50 is disposed on a first surface 11a or a third surface 13a of a case 10 of an electronic component unit (current sensor) while the shield layer 50 is not disposed on a second surface 12a. Thus, compared with a method for disposing the shield layer on the entire inner surface of the case 10, manufacturing cost can be reduced by limiting the disposition of the shield layer 50. In addition, the shield layer 50 is disposed on the first surface 11a or the third surface 13a in which the effect of the shield layer 50 is easily exerted, while the shield layer 50 is not disposed on the second surface 12a in which the effect of the shield layer 50 is reduced. Thus, it is possible to efficiently improve dV/dt characteristics (output characteristics) of the electronic component unit (current sensor).
H05K 9/00 - Blindage d'appareils ou de composants contre les champs électriques ou magnétiques
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G12B 17/02 - Écrans contre les champs électriques ou magnétiques, p. ex. ondes radio
Technologies for improving the quality of an electronic component unit are provided. A shield layer 50 is disposed on a first surface 11a, a second surface 12a, and a third surface 13a of a case 10 of an electronic component unit (electric current sensor). For the shield layer 50, various pastes (carbon paste and magnetic paste) are adopted. As the pastes can be freely applied to a desired location, an optimum shield structure can be constructed, making it possible to readily achieve improvements in both dV/dt characteristics and EMC characteristics. Further, the addition of the magnetic pastes makes it possible to provide a shield against radio noise bands (frequency bands on the order of 0.1 to 5.0 MHz). In addition, because the shield layer 50 is formed by means of a paste, construction is less expensive than with the use of metal shields (vacuum film formation by vapor deposition or sputtering).
A Schottky barrier diode includes an n-type semiconductor layer including a gallium oxide-based semiconductor, an insulating film including SiO2 and covering a portion of an upper surface of the n-type semiconductor layer, and an anode electrode which is connected to the upper surface of the n-type semiconductor layer to form a Schottky junction with the n-type semiconductor layer and at least a portion of an edge of which is located on the insulating film. The insulating film further includes a first layer in contact with the n-type semiconductor layer and a second layer on the first layer. A refractive index of the first layer is lower than a refractive index of the second layer. The n-type semiconductor layer further includes a guard ring surrounding a junction with the anode electrode.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
A Schottky barrier diode includes an n-type semiconductor layer including a gallium oxide-based semiconductor, an insulating film including SiO2 and covering a portion of an upper surface of the n-type semiconductor layer, and an anode electrode which is connected to the upper surface of the n-type semiconductor layer to form a Schottky junction with the n-type semiconductor layer and at least a portion of an edge of which is located on the insulating film. The insulating film further includes a first layer in contact with the n-type semiconductor layer and a second layer on the first layer. A refractive index of the first layer is lower than a refractive index of the second layer.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
Provided is a conveying heating apparatus with reduced temperature interference between zones and also allowing for variety-switching work associated with a temperature drop to be performed rapidly. The conveying heating apparatus includes a heating apparatus in which a plurality of heating furnaces are arranged and which is configured to blow hot air against a workpiece by means of the heating furnaces, and a conveyor that brings the workpiece to the heating apparatus, wherein each of the heating furnaces comprises an upper furnace body and a lower furnace body, a box-shaped upper temperature regulation unit is disposed ahead or behind, in the conveying direction, the upper furnace body of at least a subset of the heating furnaces, a box-shaped lower temperature regulation unit is disposed ahead or behind, in the conveying direction, the lower furnace body of at least a subset of the heating furnaces, and each of the upper and lower temperature regulation units has a medium inlet and a medium outlet.
F27B 9/02 - Fours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité à trajets multiplesFours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité à plusieurs chambresCombinaisons de fours
F27B 9/12 - Fours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité avec dispositions particulières pour le préchauffage ou le refroidissement de la charge
F27D 9/00 - Refroidissement des fours ou des charges s'y trouvant
The present invention prevents temperature unevenness in an object to be heated. This conveying heating apparatus is provided with a heating device in which multiple heating furnaces are arranged and which is configured to blow hot air by the heating furnaces to an object to be heated, and a conveyor for carrying the object into the heating device, wherein: each of the heating furnaces is formed from an upper furnace body and a lower furnace body; each heating furnace is provided with fans respectively provided in the upper furnace body and lower furnace body, pressurizing chambers respectively provided in the upper furnace body and lower furnace body, and flow straightening plates which are provided in the pressurizing chambers and to which hot air is blown from the fans; and the flow straightening plates are provided only on the outer side of the outer circumference of the fans.
Provided is a thermosetting resin composition capable of reducing the dielectric loss tangent while having high permittivity. A thermosetting resin composition containing (A) an epoxy compound, (B) a compound having a maleimide group, (C) an inorganic filler, and (D) a thermosetting catalyst, the (C) inorganic filler containing (C1) metal oxide particles, and the (C1) metal oxide particles constituting 50-90 mass% inclusive of the solids fraction of the thermosetting resin composition.
C08G 59/40 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les agents de durcissement utilisés
Provided is a core positioning technology. A current sensor 100 comprises: a pair of core members 104 that are positioned assembled together in a ring shape around a primary conductor, in a condition in which respective end surfaces 104a of both end sections of each have been made to face each other; a case body 102 that has an insertion section 103 through which the primary conductor can be inserted, and accommodates the pair of core members 104 in the interior thereof via an opening that is formed in a ring shape around the insertion section 103; spring spacers 108 that produce a force pressing the pair of core members 104 together in the facing direction from outside surfaces thereof, which are on the opposite sides from the respective end surfaces 104a; gap spacers 106 that are respectively positioned in locations where the respective end surfaces 104a of the pair of core members 104 are facing, receive the respective end sections of the core members into pairs of recessed sections 106a, and in this condition form gaps between the end surfaces 104a and suppress displacement of the core members 104; and a circuit board 110.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
33.
COIL COMPONENT AND MANUFACTURING METHOD OF THE COIL COMPONENT
The coil component includes a plurality of coils 2 including round wires 22 arranged in alignment and wound in multiple layers and a bobbin 3 around which the coils 2 are wound. The bobbin 3 includes a winding portion 21 around which the coils are wound, a flange portion 22 provided at both ends of the winding portion 21, and the wall portion provided between the adjacent coils 2 and standing from the winding portion 21. The flange portion 22 includes an inclined guide 222 that spreads toward an opening 221. The winding portion 31 includes the groove portion 312 in which the round wire 22 as the first layer is fitted, and a step 313 provided between the flange portion 32 and the groove portion 312 and protrudes from the winding portion 31. The wall portion 33 includes an inclined side surface 332.
Provided are a junction barrier Schottky diode having a trench structure that has high surge resistance and reduced energy loss during switching operation, and a method for manufacturing the same. An embodiment provides a junction barrier Schottky diode 1 comprising: an n-type semiconductor layer 11 having a plurality of trenches 111; a p-type semiconductor film 12 provided in contact with an inner surface of the a plurality of trenches 111; an anode electrode 13 which is provided on a first surface 113 of the n-type semiconductor layer 11 and in contact with a mesa-shaped portion 112 of the n-type semiconductor layer 11, a part of the anode electrode 13 being covered by the p-type semiconductor film 12 in the plurality of trenches 111; and a cathode electrode 14 provided on a second surface 114 of the n-type semiconductor layer 11 directly or with another layer therebetween.
H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
3-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/808 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à jonction PN
36.
SOLDER ALLOY, SOLDER JOINING MEMBER, SOLDER PASTE, AND SEMICONDUCTOR PACKAGE
Provided are a solder alloy, a solder joining member, a solder paste, and a semiconductor package with which it is possible to suppress any separation of a solder joining part and a semiconductor element at the interface between these two components. This solder alloy contains 1.1-8 mass% inclusive of Cu, 6-20 mass% inclusive of Sb, 0.01-0.5 mass% inclusive of Ni, and 0.001-1 mass% of Co, the balance being Sn.
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
B23K 35/22 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par la composition ou la nature du matériau
C22C 13/02 - Alliages à base d'étain avec l'antimoine ou le bismuth comme second constituant majeur
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
37.
SOLDER ALLOY, SOLDER BONDING MATERIAL, SOLDER PASTE, AND SEMICONDUCTOR PACKAGE
A solder alloy includes 1.1% by mass or more and 8% by mass or less of Cu; 6% by mass or more and 20% by mass or less of Sb; 0.01% by mass or more and 0.5% by mass or less of Ni; and 0.001% by mass or more and 1% by mass or less of Co; a balance being Sn. An amount of Cu (% by mass) and an amount of Ni (% by mass) satisfies following formula: the amount of Ni/(the amount of Cu+the amount of Ni)<0.10.
A method for manufacturing a semiconductor film includes placing a semiconductor substrate including a β-Ga2O3-based single crystal in a reaction chamber of an HVPE apparatus. When the semiconductor substrate is placed so that the growth base surface faces upward, an inlet for a dopant-including gas into the space is positioned higher than an inlet for an oxygen-including gas into the space and an inlet for a Ga chloride gas into the space is positioned higher than the inlet for the dopant-including gas into the space. When the semiconductor substrate is placed so that the growth base surface faces downward, the inlet for the dopant-including gas into the space is positioned higher than the inlet for the Ga chloride gas into the space and the inlet for the oxygen-including gas into the space is positioned higher than the inlet for the dopant-including gas into the space.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
C30B 25/14 - Moyens d'introduction et d'évacuation des gazModification du courant des gaz réactifs
C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
Provided is a bonding material that is capable of suppressing the occurrence of cracking in a bonding part and capable of suppressing the occurrence of cracking in a semiconductor element even when under the load of a particularly high temperature, said bonding material having a base material part and a solder layer that covers the upper surface and the lower surface of the base material part, wherein the base material part has: a core base material; and a first metal layer and a second metal layer that are on at least one surface of the core base material in this order from the core base material side, and the solder layer comprises a solder alloy containing 1-8 mass% of Cu, 10-30 mass% of Sb, 0.01-0.5 mass% of Ni, and 0.001-0.5 mass% of Co, with the remainder being Sn.
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
B23K 35/14 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par des propriétés mécaniques, p. ex. par la forme non spécialement conçus pour servir d'électrodes pour le brasage
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
C22C 13/02 - Alliages à base d'étain avec l'antimoine ou le bismuth comme second constituant majeur
40.
SOLDER COMPOSITION AND METHOD FOR MANUFACTURING FLEXIBLE CIRCUIT BOARD
A solder composition contains: a flux composition containing an (A) rosin resin, a (B) activator, a (C) thixotropic agent, and a (D) solvent; and (E) solder powder, in which the (B) component contains a (B1) dicarboxylic acid having 3 to 8 carbon atoms, the (C) component contains at least one selected from the group consisting of a (C1) amide thixotropic agent having a hydroxy group in one molecule and a (C2) glycerol thixotropic agent having a hydroxy group in one molecule, and the solder composition satisfies a condition represented by Numerical Formula (F1) below provided that a total of contents of the (C1) component and the (C2) component is defined as X and a content of the (B1) component is defined as Y,
A solder composition contains: a flux composition containing an (A) rosin resin, a (B) activator, a (C) thixotropic agent, and a (D) solvent; and (E) solder powder, in which the (B) component contains a (B1) dicarboxylic acid having 3 to 8 carbon atoms, the (C) component contains at least one selected from the group consisting of a (C1) amide thixotropic agent having a hydroxy group in one molecule and a (C2) glycerol thixotropic agent having a hydroxy group in one molecule, and the solder composition satisfies a condition represented by Numerical Formula (F1) below provided that a total of contents of the (C1) component and the (C2) component is defined as X and a content of the (B1) component is defined as Y,
X
/
2
≤
Y
≤
5
X
B23K 35/362 - Emploi de compositions spécifiées de flux
B23K 35/36 - Emploi de compositions non métalliques spécifiées, p. ex. comme enrobages, comme fluxEmploi de matériaux de brasage ou de soudage spécifiés associé à l'emploi de compositions non métalliques spécifiées, dans lequel l'emploi des deux matériaux est important
H01L 29/201 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV comprenant plusieurs composés
Provided is a gallium oxide-based semiconductor substrate configured to allow the formation, by HVPE, of a gallium oxide-based epitaxial film having a small film thickness distribution, a small donor concentration distribution, and a low crystal defect density. Also provided are a semiconductor wafer including the semiconductor substrate and the epitaxial film, and a method for manufacturing the semiconductor wafer. As one embodiment, provided is a semiconductor substrate 10 in which at least one main surface thereof is a crystal growth base surface 11. The semiconductor substrate 10 comprises a single crystal of a gallium oxide-based semiconductor. The growth base surface 11 is the (001) plane. In a continuous region of 70 area% or more of the growth base surface 11, the off angle in the [010] direction is in the range from greater than -0.3° to -0.01°, or in the range from 0.01° to smaller than 0.3°. In said region of the growth base surface 11, the off angle in the [001] direction is in the range from -1° to 1°. The diameter of the semiconductor substrate 10 is 2 inches or more.
H01L 21/365 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
A semiconductor device includes a lead frame including a raised portion on a surface, and a semiconductor element that is face-down mounted on the lead frame and includes a substrate including a Ga2O3-based semiconductor, an epitaxial layer including a Ga2O3-based semiconductor and stacked on the substrate, a first electrode connected to a surface of the substrate on an opposite side to the epitaxial layer, and a second electrode connected to a surface of the epitaxial layer on an opposite side to the substrate and including a field plate portion at an outer peripheral portion. The semiconductor element is fixed onto the raised portion. An outer peripheral portion of the epitaxial layer, which is located on the outer side of the field plate portion, is located directly above a flat portion of the lead frame that is a portion at which the raised portion is not provided.
A method for manufacturing a semiconductor element includes preparing a semiconductor wafer that includes a substrate including a Ga2O3-based semiconductor and an epitaxial layer including a Ga2O3-based semiconductor and located on the substrate, fixing the epitaxial layer side of the semiconductor wafer to a support substrate, thinning the substrate of the semiconductor wafer fixed to the support substrate, after the thinning of the substrate, forming an electrode on a lower surface of the substrate, bonding or forming a support metal layer on a lower surface of the electrode of the semiconductor wafer, and dicing the semiconductor wafer into individual pieces, thereby obtaining plural semiconductor elements each including the support metal layer. Thermal conductivity of the support metal layer is higher than thermal conductivity of the substrate.
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
Provided is a conveying heating apparatus with which it is possible to prevent generation of waste metal and suppress variations in in-plane temperature distribution of a substrate. This conveying heating apparatus comprises: a heating device which has arrayed therein one or more heating furnaces and which is configured to cause the heating furnaces to blow hot air onto an object to be heated; and a conveyance conveyor which conveys a substrate into the heating device. The conveyance conveyor is provided with: a conveyance chain that comprises opposing link plates, a shaft or roller disposed between the link plates, and an attachment for mounting a substrate thereon; a metal rail which has a U-shaped cross-section formed by contiguously connecting a top surface, an under surface, and a lateral surface, and in which the conveyance chain is disposed in a space between the top surface and the under surface; and a plurality of rod-like underside resin guides which comprise a heat-resistant, non-conductive resin and are inserted in a groove formed in the under surface of the metal rail so as to extend in the conveyance direction and which are brought into contact with the under surface of the shaft or roller.
B65G 21/22 - Rails ou éléments analogues d'engagement à glissières ou à rouleaux fixés aux porte-charges ou aux éléments de traction
F27B 9/24 - Fours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité caractérisés par le trajet de la charge pendant le traitementFours dans lesquels la charge est déplacée mécaniquement, p. ex. du type tunnel Fours similaires dans lesquels la charge se déplace par gravité caractérisés par le procédé de déplacement de la charge pendant le traitement la charge se déplaçant sur un trajet sensiblement rectiligne sur un transporteur
F27B 9/30 - Parties constitutives, accessoires ou équipement spécialement adaptés à ces types de fours
By containing 0.1-3 mass% Ag, 8-15 mass% Cu and 30-40 mass% Sb, and the remainder being Sn, a solder alloy is provided which, even in high temperature environments, suppresses re-melting of a solder joint that is formed.
C22C 13/02 - Alliages à base d'étain avec l'antimoine ou le bismuth comme second constituant majeur
C22C 30/04 - Alliages contenant moins de 50% en poids de chaque constituant contenant de l'étain ou du plomb
B23K 35/22 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par la composition ou la nature du matériau
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
A reactor that can suppress an increase in ripple current even when electric current imbalance occurs is provided. A reactor 10 includes an annular core 1 formed by a magnetic body, and two coils 2 which are attached and magnetically joined to the annular core 1 and which generate magnetic fluxes in directions opposite to each other. The differential permeability of the annular core 1 at 5000 A/m is equal to or more than 30% of the maximum differential permeability of the annular core 1.
Provided are: a photosensitive resin composition from which a photocured product having excellent film sticking prevention properties and bending properties without impairing basic characteristics of insulation reliability and heat resistance can be obtained; and a wiring board having a photocured film of said photosensitive resin composition. This photosensitive resin composition contains (A) a carboxyl group-containing photosensitive resin, (B) a photopolymerization initiator, (C) a reactive diluent, (D) an epoxy compound, (E) urethane beads, and (F) a fine powdery inorganic filler.
C08G 59/68 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les catalyseurs utilisés
A drive circuit is provided. When the switching element is in turn-on state and a collector-emitter voltage of the switching element is equal to or higher than a first predetermined voltage value, the first diode is turned on; the first transistor and the second transistor are turned on; and, after a mask time in which a first capacitor is started to be charged with a current from a current source and a voltage value at two ends becomes equal to or higher than a second predetermined voltage value higher than the first predetermined voltage value, an abnormality detection signal is output to the control unit. The control unit stops an output of the pulse signal to the switching element in response to the abnormality detection signal.
H03K 17/0812 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
A reactor that suppresses the transmission of the vibration of the core and the vibration of the coil and that reduces the vibration thereof is provided. The reactor includes a coil 3 with a cylindrical shape and a core 1 having legs 12 around which the coil 3 is wound. The core includes a core mold resin 2 which covers at least a part of the core 1, and a core holder which holds the core 1. The coil 3 includes a coil mold resin 4 which covers at least a part of the coil 3, and a coil holder which holds the coil 3. The core holder and the coil holder independently hold the core 1 and the coil 3, respectively, and a gap S1 is provided between the legs 12 and the inner circumferential surface of the coil 3.
A high-side driver circuit is a circuit that drives a power semiconductor switch. The high-side driver circuit comprises a main switch N-channel MOSFET that has a drain terminal that is connected to a plus-side Vdc of a power supply and has a source terminal that is connected to an OUT terminal for a signal that drives the power semiconductor switch, a charge storage circuit that stores charge from the Vdc, and a voltage detection-capable switch that detects the voltage difference between an output terminal of the charge storage circuit and the Vdc and, upon detecting that the output terminal voltage of the charge storage circuit is at least a specific voltage higher than the voltage of a plus-side Vcc of the power supply, applies part or all of the output voltage of the charge storage circuit to a gate terminal of the main switch N-channel MOSFET.
H03K 3/00 - Circuits pour produire des impulsions électriquesCircuits monostables, bistables ou multistables
H03K 17/06 - Modifications pour assurer un état complètement conducteur
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p. ex. BIMOS, dispositifs composites tels que IGBT
The present invention provides a photosensitive resin composition which has excellent dispersibility during storage and preservation, is capable of reducing the water absorption coefficient, and is capable of forming a cured film having excellent bendability and insulation reliability. The photosensitive resin composition comprises (A) a photosensitive resin containing carboxyl groups, (B) an epoxy compound, (C) urethane beads, (D) a photopolymerization initiator, and (E) a reactive diluent,. The urethane beads (C) are coated by silica, and at least 20 mass% of 100 mass% of the silica is hydrophobic silica.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
06 - Métaux communs et minerais; objets en métal
07 - Machines et machines-outils
09 - Appareils et instruments scientifiques et électriques
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler
37 - Services de construction; extraction minière; installation et réparation
Produits et services
Soldering fluxes; Soldering chemicals; Brazing fluxes; Brazing preparations; chemicals for use in industry; surface-active chemical agents; adhesives for industrial purpose; chemical coatings used in the manufacture of printed circuit boards; Phosphor; solder resist; liquid solder-resists; soldering paste; solder mask [chemical preparations]; antioxidants for use in manufacture; conductive adhesives for industrial purposes; epoxy resins, unprocessed; plastics, unprocessed; dry film resist; photoresists. Alloys of common metal; Powder of non-ferrous metals and their alloys; Non-ferrous metals and their alloys; solders; solder alloys; lead-free solder; soldering wire of metal; silver solder; gold solder; Solder bar; solder wire. Vending machines; buttons for vending machines; metalworking machines; electric soldering apparatus; electric welding apparatus; washing machines for soldering pallets for industrial purposes; soldering dross separators; electric soldering bath; nitrogen generators; dust collecting machines for chemical processing; flux collecting apparatus for soldering process; industrial printing machines; painting machines; spraying machines; machinery for spray coating; flux applying apparatus for soldering process; plastic processing machines; Alternator; DC generator; motors other than for land vehicles; starters for motors and engines; semi-conductor manufacturing apparatus. Physical and chemical laboratory apparatus and instruments; photographic apparatus and instruments; satellites for scientific purposes; coils, electric; electromagnetic coils; transformers [electricity]; condensers [capacitors]; converters, electric; switches, electric; fuses; resistances, electric; choking coils [impedance]; inductors [electricity]; inverters [electricity]; usb adapters, cable adapters; electric power distribution units, power distribution or control machines and apparatus; battery chargers; Electric power supply units; Electric reactors; piezoelectric transformer; power modules; phase modifiers; rotary converters; batteries, electric; solar batteries; batteries; measuring or testing machines and instruments; electric or magnetic meters and testers; current sensors; electric circuit testers; electric wires and cables; resistance wires; limiters [electricity]; sound transmitting apparatus; sound recording apparatus; sound reproduction apparatus; audio mixers; mounting racks for installing audio systems; headphones; headsets; sound signal converter; microphones; modems; aerials; telecommunications apparatus and instruments; wireless communication devices; broadcasting equipment; network controlling apparatus; data communication apparatus and instruments; wireless intercoms; digital signs; computer programs, recorded; computer software, recorded; computer programs [downloadable software]; monitors [computer programs]; monitoring apparatus, other than for medical purposes; computers; computer peripheral devices; interfaces for computers; printed electronic circuits; integrated circuits; printed circuit boards; light-emitting diodes [LED]; semi-conductors; semiconductor wafers; semiconductor elements; semiconductor substrate; magnetic cores; electrodes; electronic publications; detecting and warning apparatus of abnormality of home for elderly people living alone, comprising of sensors and computer networks, etc.; circuit modules for gate driver control. Insulating materials; dielectrics [insulators]; insulating paints; insulating ink; insulating films; insulators; insulating tapes. Installation, repair and maintenance of telecommunications apparatus and instruments; installation, repair and maintenance of audio mixers; installation, repair and maintenance of broadcasting equipment; installation, repair and maintenance of wireless communication devices; installation, repair and maintenance of network controlling apparatus; installation, repair and maintenance of metalworking machines; installation, repair and maintenance of electric soldering apparatus; installation, repair and maintenance of nitrogen generators; installation, repair and maintenance of semiconductor manufacturing machines; installation, repair and maintenance of vending machines.
A Schottky barrier diode, including a first n-type semiconductor layer including a β-Ga2O3-based single crystal epitaxial layer and having a first carrier concentration that determines reverse breakdown voltage and forward voltage, a second n-type semiconductor layer including a β-Ga2O3-based single crystal substrate and having a second carrier concentration that is higher than the first carrier concentration and determines forward voltage, a Schottky electrode provided on a surface of the first n-type semiconductor layer on the opposite side to the second n-type semiconductor layer, and an ohmic electrode provided on a surface of the second n-type semiconductor layer on the opposite side to the first n-type semiconductor layer. The β-Ga2O3-based single crystal substrate includes a surface that has a plane orientation rotated by an angle of not more than 37.5° from a (010) plane.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/267 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, des éléments couverts par plusieurs des groupes , , , , dans différentes régions semi-conductrices
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
A solder composition of the invention contains: a flux composition containing (A) a rosin resin, (B) an activator, (C) an imidazoline compound having a phenyl group, and (D) an antioxidant; and (E) solder powder, in which the (B) component contains (B1) an organic acid, the (B1) component contains at least one selected from the group consisting of (B11) 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, and 1,4-dihydroxy-2-naphthoic acid, and the (C) component is at least one selected from the group consisting of 2-phenylimidazoline and 2-benzylimidazoline.
B23K 35/362 - Emploi de compositions spécifiées de flux
B23K 35/36 - Emploi de compositions non métalliques spécifiées, p. ex. comme enrobages, comme fluxEmploi de matériaux de brasage ou de soudage spécifiés associé à l'emploi de compositions non métalliques spécifiées, dans lequel l'emploi des deux matériaux est important
A terminal block includes a terminal and a base having a terminal attachment part to which the terminal is attached. The terminal includes a coupling part coupled to the terminal attachment part. The terminal attachment part is formed with an insertion hole extending in a first direction and into which the coupling part is inserted, and a fitting hole communicating with the insertion hole. The coupling part includes a click part configured to fit into the fitting hole, and the click part projects toward the fitting hole by being bent at a root of the click part along a straight line substantially parallel to the first direction.
The present disclosure provides a photosensitive dry film enabling a photocured film being excellent in insulation reliability and resolution and having a frosted appearance to be obtained. A photosensitive dry film including a support film having a first main surface and a second main surface opposite to the first main surface, and a photosensitive resin layer provided on the first main surface, in which the first main surface has an irregular surface formed by chemical etching.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
H05K 3/28 - Application de revêtements de protection non métalliques
61.
MODULAR MULTI-LEVEL POWER CONVERTER, AND MODULAR MULTI-LEVEL POWER CONVERSION SYSTEM
In the present invention, a MMC converter comprises three two-terminal arms on a P terminal side, and another three on an N-terminal side. An induction element between the P-terminal-side and the N-terminal-side arms includes a reactor provided with UP, UN coils wound concentrically on an iron core leg, a reactor provided with VP, VN coils wound concentrically on the iron core leg, and a reactor provided with WP, WN coils wound concentrically on the iron core leg. A first terminal of the UP coil and a second terminal of the UN coil, a first terminal of the VP coil and a second terminal of the VN coil, and a first terminal of the WP coil and a second terminal of the WN coil are connected. A second terminal of the UP coil is connected to a first terminal of a UP arm, a first terminal of the UN coil is connected to a second terminal of a UN arm, a second terminal of the VP coil is connected to a first terminal of a VP arm, a first terminal of the VN coil is connected to a second terminal of a VN arm, a second terminal of the WP coil is connected to a first terminal of a WP arm, and a first terminal of the WN coil is connected to a second terminal of a WN arm. Each coil is wound in the direction in which the iron core leg is excited by current passing through from the N terminal to the P terminal.
22222 concentration threshold value; and a notification unit 30 that notifies a first message indicating that the room is a poorly ventilated closed space for infectious disease control on the basis of the first notification signal.
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
64.
FLUX, SOLDER PASTE, ELECTRONIC CIRCUIT MOUNTING BOARD, AND ELECTRONIC CONTROL DEVICE
In order to provide a flux, a solder paste, an electronic circuit mounting board, and an electronic control device that can suppress whiskering in a solder-joined section and demonstrate good solderability and storage stability, this flux includes a base resin, an organic acid, a heterocyclic compound, and a solvent, wherein in relation to the total mass of the flux, greater than or equal to 0.05 mass% and less than 15 mass% of a compound represented by general formula (1) is included as the organic acid, and in relation to the total mass of the flux, greater than or equal to 0.05 mass% and less than 15 mass% of the heterocyclic compound is included. (In general formula (1), X is at least one option selected from among one or more carboxyl groups, an alkyl group, and a hydrogen atom. These substituents and hydrogen atom are not limited in location or number, and X may be one or a combination of several of these.)
Provided is a vending machine control device having higher safety against electrical impact from the outside than when electrical energy stored in a power storage part is not used for unlocking an electric lock. A vending machine 2 comprises: a mechanical lock 13 for mechanically locking and unlocking a door of the vending machine 2 by a mechanical key 140; an electromagnetic lock 11 for electrically locking and unlocking the door; a capacitor 121 for storing electrical energy; and a controller 200 for performing control to unlock the electric lock 11 by the electrical energy stored in the capacitor 121.
An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has an outer peripheral trench surrounding the anode electrode in a plan view. The surface of the drift layer positioned between the anode electrode and the outer peripheral trench is covered with a semiconductor layer having a conductivity type opposite to that of the drift layer.
An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
2323233-based single crystal, on the growth substrate surface 11 of the semiconductor substrate 10, wherein the flow inlet of the dopant-containing gas to the space 24 is positioned higher than the flow inlet of the oxygen-containing gas to the space 24, and the flow inlet of the Ga chloride gas to the space 24 is positioned higher than the flow inlet of the dopant-containing gas to the space 24.
C30B 25/14 - Moyens d'introduction et d'évacuation des gazModification du courant des gaz réactifs
C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
H01L 21/365 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
3-based single crystal substrate having a crack density of less than 0.05 cracks/cm can be obtained that has as a principal surface thereof a surface rotated 10-150° from the (100) plane, when a rotation direction from the (100) plane to the (001) plane via the (101) plane is defined as positive, having the [010] axis as the rotation axis.
23233-based semiconductor; a step for fixing an epitaxial layer 12 side of the semiconductor wafer 10 to a support substrate 21; a step for making a substrate 11 of the semiconductor wafer 10 thinner; a step for forming a cathode electrode 16 on the bottom surface of the substrate 11; a step for adhering a metal plate 23 on the bottom surface of the cathode electrode 16; and a step for obtaining a plurality of SBD1 each comprising the metal plate 23 by dicing the semiconductor wafer 10 to make individual pieces.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/288 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un liquide, p. ex. dépôt électrolytique
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p. ex. cloisonnement en zones séparées
Provided is a gate drive circuit that is provided with an active clamp for protecting portions between a collector and an emitter of an IGBT, that suppresses heat generation of a constant voltage diode, and that generates a limited amount of noise. This gate drive circuit is provided with a clamp circuit that clamps a voltage between a collector (hereinafter referred to as C) and an emitter (hereinafter referred to as E) of a power semiconductor element. The clamp circuit has: a constant voltage diode (hereinafter referred to as D) connected to C; an impedance circuit connected between the other end of the constant voltage D and a minus power supply; a first drawing circuit that has one end connected to a connection point between the constant voltage D and the impedance circuit and that comprises a first switch (hereinafter referred to as SW) and a first resistor; a second drawing circuit that comprises the second SW and a second resistor that are connected in a similar manner to the connection regarding the first drawing circuit; and a detection circuit that, when a change rate of a C voltage has exceeded a threshold value, outputs a SW open signal. When the SW open signal has been received, the second SW is changed from a conduction state to a non-conduction state.
H03K 17/08 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p. ex. BIMOS, dispositifs composites tels que IGBT
H02M 1/00 - Détails d'appareils pour transformation
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
2323233-based semiconductor, a cathode electrode 13 which is connected to the substrate 11, and an anode electrode 14 which is connected to the epitaxial layer 12 and has a field plate part 140 on an outer peripheral part. The SBD 10 is fixed on the projection 200, and an outer peripheral part 120 of the epitaxial layer 12 is located right above a flat part 201 of the lead frame 20.
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
Provided is a gate drive circuit that achieves improvement of the accuracy of mask time and improvement of tolerance to malfunctions. A gate drive circuit for driving a power semiconductor switch according to the present invention comprises: a comparison circuit that compares a collector-emitter voltage of the power semiconductor switch with a predetermined threshold voltage; and a time measurement circuit that starts a time measurement when the comparison circuit detects that the collector-emitter voltage exceeds the threshold voltage, wherein the gate drive circuit is characterized in that the time measurement circuit includes an output circuit that, after measuring a wait hold time (mask time), outputs an abnormality signal meaning that the power semiconductor switch is in an abnormal state.
H03K 17/08 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p. ex. BIMOS, dispositifs composites tels que IGBT
H02M 1/00 - Détails d'appareils pour transformation
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a plurality of trenches formed in a position overlapping the anode electrode in a plan view. Among the plurality of trenches, a trench positioned at the end portion has a selectively increased width. Thus, the curvature radius of the bottom portion of the trench is increased, or an edge part constituted by the bottom portion as viewed in a cross section is divided into two parts. As a result, an electric field to be applied to the bottom portion of the trench positioned at the end portion is mitigated, making dielectric breakdown less likely to occur.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
3-based single crystal, an anode electrode that forms a Schottky junction with the semiconductor layer and is configured so that a portion in contact with the semiconductor layer includes Mo or W, and a cathode electrode. A turn-on voltage thereof is not less than 0.3 V and not more than 0.5 V.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
The purpose of the present invention is to provide a gate drive circuit using a simpler circuit and equipped with a faster switch circuit, while suppressing cost increases. The gate drive circuit drives a semiconductor switch on the basis of a control signal. The gate drive circuit is provided with: an input terminal; a high-side switch connected to a positive-side power supply; a low-side switch connected to a negative-side power supply; a first differentiating circuit which is connected to the positive-side power supply and which differentiates and supplies the control signal to the high-side switch; a second differentiating circuit which is connected to the negative-side power supply and which differentiates and supply the control signal to the low-side switch; an output terminal for outputting a driving signal; a first impedance circuit connected between the high-side switch and the output terminal; and a second impedance circuit connected between the high-side switch and the output terminal.
H03K 17/04 - Modifications pour accélérer la commutation
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p. ex. BIMOS, dispositifs composites tels que IGBT
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
79.
SINGLE CRYSTAL INGOT, CRYSTAL GROWTH DIE, AND SINGLE CRYSTAL PRODUCTION METHOD
An as-grown single crystal ingot 1 of a dopant-containing metal oxide or quasi-binary compound is provided in which a lateral surface 221 has a length L greater than or equal to 50 mm, there is a linear recess 222 on the lateral surface 221, and, in the area surrounded by the lateral surface 221, the outer shape of the cross-section perpendicular to the length direction and positioned spaced 50 mm away in the length direction from the other end in the length direction without with the recess 222 is such that, outside of the area formed by the line of intersection between the cross-section and a faceted surface, the maximum value of the distance X of the recess 222 from an ideal outer shape 30 is less than or equal to 5 mm.
An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 29/66 - Types de dispositifs semi-conducteurs
Provided is a wavelength conversion member 1 which comprises a substrate 10 and a wavelength conversion layer 11 that includes a phosphor particle group 12 and a sealing member 13 for sealing the phosphor particle group 12 and that is provided on the substrate 10 directly or with another layer therebetween, wherein: a predetermined region, in which the area ratio of the cross-section of the phosphor particle group 12 is 50% or more, is included in an arbitrary cross-section parallel to the thickness direction of the wavelength conversion layer 11; when the thickness of the wavelength conversion layer 11 is at least 50 μm, the predetermined region is a rectangular region that has a thickness of 50 μm from the bottom surface of the wavelength conversion layer 11 and a width of 700 μm; and when the thickness of the wavelength conversion layer 11 is less than 50 μm, the predetermined region is a rectangular region that has the same thickness as that of the wavelength conversion layer 11 and a width of 700 μm.
The present invention uses a simpler circuit structure to provide a high-side driver for a gate drive circuit that uses an N-channel MOSFET. A high-side driver circuit that is a circuit that drives a power semiconductor switch. The high-side driver circuit comprises a main switch N-channel MOSFET that has a drain terminal that is connected to a plus-side Vdc of a power supply and has a source terminal that is connected to an OUT terminal for a signal that drives the power semiconductor switch, a charge storage circuit that stores charge from the Vdc, and a voltage detection–capable switch that detects the voltage difference between an output terminal of the charge storage circuit and the Vdc and, upon detecting that the output terminal voltage of the charge storage circuit is at least a specific voltage higher than the voltage of a plus-side Vcc of the power supply, applies part or all of the output voltage of the charge storage circuit to a gate terminal of the main switch N-channel MOSFET.
H03K 17/06 - Modifications pour assurer un état complètement conducteur
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p. ex. BIMOS, dispositifs composites tels que IGBT
Provided is a wavelength conversion member 1 comprising a sintered product of a phosphor, wherein the average diameter of pores in an arbitrary cross section falls within the range from 0.28 to 0.98 μm inclusive, the ratio of the areas of pores to the whole area in an arbitrary cross section falls within the range from 0.04 to 2.7% inclusive, and the average diameter of grains of the phosphor in an arbitrary cross section falls within the range from 1 to 3 μm inclusive.
C09K 11/00 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes
C09K 11/64 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant de l'aluminium
C04B 35/44 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'aluminates
C04B 35/50 - Produits céramiques mis en forme, caractérisés par leur compositionCompositions céramiquesTraitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de composés de terres rares
3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 μm in a region including the inner surface of the trench.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
A lead-free solder alloy includes 2.0% by mass or more and 4.0% by mass or less of Ag, 0.3% by mass or more and 0.7% by mass or less of Cu, 1.2% by mass or more and 2.0% by mass or less of Bi, 0.5% by mass or more and 2.1% by mass or less of In, 3.0% by mass or more and 4.0% by mass or less of Sb, 0.001% by mass or more and 0.05% by mass or less of Ni, 0.001% by mass or more and 0.01% by mass or less of Co, and the balance being Sn.
A reactor capable of suppressing a deformation of a resin material in a gap between partial cores is provided. This reactor includes: a core that includes T-shaped cores which are at least a pair of partial cores disposed via the gap therebetween; a coil attached to respective parts of the T-shaped cores; and a core casing that is a core molding member which is formed integrally by a resin material and which covers the T-shaped cores. The core casing includes the coupling portion that is provided between the T-shaped cores at a location corresponding to the gap, and the coupling portion is provided with a through-hole, and a pair of connection portions which face with each other across the through-hole and which connects a space between the T-shaped cores.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
23233-based single crystal and comprising: an n-type semiconductor layer 11 having a plurality of trenches 12 opening on one side; an anode electrode 13 connected to mesa-shaped regions between adjacent trenches 12 of the n-type semiconductor layer 11; an anode electrode 16 embedded in each of the plurality of trenches 12 in a state of being coated with a trench insulating film 15; a cathode electrode 14 connected directly or indirectly to the side of the n-type semiconductor layer 11 opposite to the anode electrode 13; and a p-type semiconductor member 17 connected to a part of the mesa-shaped regions and to the anode electrode 13.
A gate driver includes: driver boards mountable on an IGBT module which is a driving-target external device; gate driver circuits which are formed on the driver boards and each apply a drive signal generated using power and a signal which are externally input through an input connector, to semiconductor elements of the IGBT module; and an insulating surrounding member disposed to surround a peripheral edge of the input-side driver board.
H05K 5/00 - Enveloppes, coffrets ou tiroirs pour appareils électriques
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p. ex. BIMOS, dispositifs composites tels que IGBT
H05K 5/02 - Enveloppes, coffrets ou tiroirs pour appareils électriques Détails
91.
MOLDING SOLDER AND METHOD FOR PREPARING SAME, AND SOLDERING METHOD
A molding solder according to the present invention is a molding solder that contains: a solder alloy; and a high-melting point metal having a higher melting point than the solder alloy. The molding solder is characterized in that in a cross section of the molding solder, when an element analysis is performed by using a energy dispersive X-ray spectrometer to classify the cross-section of the molding solder into a first phase composed of a solder alloy, a second phase composed of a high-melting point metal, and a third phase composed of the solder alloy and the high-melting point metal, the area ratio of the first phase is at least 15% with respect to 100% of the total sum area of the first phase, second phase, and third phase, and the area ratio of the second phase is at least 25% with respect to 100% of the total area of the first phase, second phase, and third phase.
B23K 35/14 - Baguettes, électrodes, matériaux ou environnements utilisés pour le brasage, le soudage ou le découpage caractérisés par des propriétés mécaniques, p. ex. par la forme non spécialement conçus pour servir d'électrodes pour le brasage
B23K 35/40 - Fabrication de fils ou de barres pour le brasage ou le soudage
B23K 35/26 - Emploi de matériaux spécifiés pour le soudage ou le brasage dont le principal constituant fond à moins de 400°C
3-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/808 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à jonction PN
94.
LEAD-FREE SOLDER ALLOY, SOLDER JOINING MATERIAL, ELECTRONIC CIRCUIT MOUNTING BOARD, AND ELECTRONIC CONTROL DEVICE
In order to make it possible to achieve thermal fatigue resistance even in environments having extremely severe differences in temperature such as between -40ºC and 175ºC and minimize the development of cracks occurring in a solder joint section even in harsh environments in which such extremely severe differences in temperature and vibration are applied, the present invention provides a lead-free solder alloy characterized by comprising 2.0-4.0 mass% of Ag, 0.3-0.7 mass% of Cu, 1.2-2.0 mass% of Bi, 0.5-2.1 mass% of In, 3.0-4.0 mass% of Sb, 0.001-0.05 mass% of Ni, 0.001-0.01 mass% of Co, and a remainder of Sn.
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/267 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, des éléments couverts par plusieurs des groupes , , , , dans différentes régions semi-conductrices
H01L 21/18 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV du tableau périodique, ou des composés AIIIBV, avec ou sans impuretés, p. ex. des matériaux de dopage
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 29/267 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, des éléments couverts par plusieurs des groupes , , , , dans différentes régions semi-conductrices
H01L 29/36 - Corps semi-conducteurs caractérisés par la concentration ou la distribution des impuretés
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
3-based single crystal, and a p-type semiconductor layer including a p-type semiconductor in which a volume of an amorphous portion is higher than a volume of a crystalline portion. The n-type semiconductor layer and the p-type semiconductor layer form a pn junction.
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
A planar light-emitting device 1 is provided with: a base member 3 to which a light source 2 is mounted; a cover member 4 which covers the base member 3 and is provided with a display unit illuminated by light emitted from the light source 2; and a diffusion sheet 6 which is disposed in an internal space 10, formed by the base member 3 and the cover member 4, substantially in parallel to the base member 3 without contacting the cover member 4, and which has a diffusion pattern 60 for diffusing light substantially centered directly above the light source 2.
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p. ex. à construction modulaire
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky
[Problem] To provide a Schottky barrier diode which is less vulnerable to insulation damage caused by electric field concentration. [Solution] The Schottky barrier diode according to this disclosure comprises: a semiconductor substrate 20 which is made from gallium oxide; a drift layer 30 which is made from gallium oxide and is provided on top of the semiconductor substrate 20; an anode electrode 40 which is in Schottky contact with the drift layer 30; a cathode electrode 50 which is in ohmic contact with the semiconductor substrate 20; an insulating layer 80 which is provided on the drift layer 30 and which surrounds the anode electrode 40 in plan view; and a semiconductor layer 70 which has the reverse conductivity of the drift layer 30 and which is provided to the surface of the drift layer 30 positioned between the anode electrode 40 and the insulating layer 80, while also being provided on the insulating layer 80.
