A power converter comprising a substrate, a control circuit disposed on the substrate; and a first circuit stack disposed on the substrate and coupled to the control circuit. The first circuit stack is in a stacked configuration. The first circuit stack comprises a first switch layer, a first interposer layer electrically coupled to the first switch layer, a second interposer layer electrically coupled to the first interposer layer, a first gate drive layer disposed between and electrically coupled to the first interposer layer and the second interposer layer, and a first inductor layer electrically coupled to the first gate drive layer.
A power converter comprising a substrate, a control circuit disposed on the substrate; and a first circuit stack disposed on the substrate and coupled to the control circuit. The first circuit stack is in a stacked configuration. The first circuit stack comprises a first switch layer, a first interposer layer electrically coupled to the first switch layer, a second interposer layer electrically coupled to the first interposer layer, a first gate drive layer disposed between and electrically coupled to the first interposer layer and the second interposer layer, and a first inductor layer electrically coupled to the first gate drive layer.
H02M 3/00 - Conversion of DC power input into DC power output
H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
3.
METHOD OF RECOVERING HGCDTE DETECTOR PERFORMANCE AFTER HIGH TEMPERATURE BIAS-INDUCED DEFECT GENERATION
A method of baking a detector, the method comprising: placing a mid-wave infrared detector in an environmental chamber, wherein the environmental chamber is opaque. The mid-wave infrared detector comprises an anode, a guard terminal, and a cathode. The method further comprising connecting the anode to the cathode in a short circuit configuration, heating the environmental chamber to a bake temperature selected in the range of 60 to 70 degrees Celsius, and maintaining the detector in the environmental chamber for a period selected in the range of 72 hours to 240 hours.
A high electron mobility transistor comprising a substrate. The substrate comprising: a buffer layer, a channel layer disposed on the buffer layer, an interlayer disposed on the channel layer, a spacer layer, and a first barrier layer between the spacer layer and a cap layer, the spacer layer is between the interlayer and the first barrier layer. The high electron mobility transistor comprises a source electrode disposed on the channel, a drain electrode disposed on the channel, and a gate electrode disposed between the source electrode and the drain electrode, the gate electrode defining a longitudinal portion extending through the capping layer, wherein a distal end of the longitudinal portion is in contact with the first barrier layer defines an external fillet between the distal end and the longitudinal portion.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
A coating comprising a first dielectric overlayer, a first dielectric underlayer, a continuous thermochromic layer disposed between the first dielectric overlayer and the first dielectric underlayer, and a metal layer disposed below the first dielectric underlayer.
Laterally-gated transistors and lateral Schottky diodes are disclosed. The FET includes a substrate, source and drain electrodes, channel, a gate electrode structure, and a dielectric layer. The gate electrode structure includes an electrode in contact with the channel and a lateral field plate adjacent to the electrode. The dielectric layer is disposed between the lateral field plate and the channel. The lateral field plate contacts the dielectric layer and to modulate an electric field proximal to the gate electrode proximal to the drain or source electrodes. Also disclosed is a gate electrode structure with lateral field plates symmetrically disposed relative to the gate electrode. Also disclosed in a substrate with dielectric structures buried in the substrate remote from the gate electrode structure. A lateral Schottky diode having an anode structure includes an anode (A), cathodes (C) and lateral field plates located between the anode and the cathodes.
Techniques for facilitating light signal assessment receiver systems and methods are provided. In one example, a light signal assessment device includes a light signal detection device including a filter array, a detector array, and a measurement device. The filter array is configured to filter a light signal incident on the filter array. The detector array is configured to receive the filtered light signal and generate a light signal detection image based on the filtered light signal. The measurement device is configured to determine a characteristic associated with the light signal based on the light signal detection image. The assessment device further includes a logic device configured to generate an output based on the characteristic. Related methods and systems are also provided.
Techniques for facilitating light signal assessment receiver systems and methods are provided. In one example, a light signal assessment device includes a light signal detection device including a filter array, a detector array, and a measurement device. The filter array is configured to filter a light signal incident on the filter array. The detector array is configured to receive the filtered light signal and generate a light signal detection image based on the filtered light signal. The measurement device is configured to determine a characteristic associated with the light signal based on the light signal detection image. The assessment device further includes a logic device configured to generate an output based on the characteristic. Related methods and systems are also provided.
A FET with buried gate structures which contact an epitaxial channel layer only from the sides. The epitaxial channel layer preferably comprises multiple channel segments, the widths of which vary along the depth direction. By controlling the slope of the channel sidewalls and the distance between buried gate structures, the FET's transfer characteristics can be engineered to improve the FET's linearity.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
Techniques are provided for implementing hybrid anodes for batteries. In one example, a battery anode includes a current collector having a continuous particulate matrix and an open pore structure and an anode material disposed at least within pores of the current collector. In another example, a method of forming the anode includes forming a slurry of current collector particles, a binder, and a solvent, casting the slurry into a film, de-binding the slurry to remove the binder and solvent, sintering the particles to form a current collector, and infiltrating the current collector with an anode material.
A thermo-optical ground plane includes a plate configured to mount a diode laser device defining a first surface area, an evaporation chamber in thermal communication with the plate, and a channel defined in thermal communication with the evaporation chamber. The channel is configured to receive and circulate a coolant fluid at a predetermined flowrate. The evaporation chamber is configured to receive a working fluid. The inner walls of the evaporation chamber define a second surface area that is greater than the first surface area of the diode laser device. The plate comprises beam shaping and folding optics for collimating and focusing the light from the diode laser device on an optical fiber. Light from a plurality of thermo-optical ground planes is combined on a single optical fiber. The structure enables cooling with exceptionally low coolant flowrate while also maintaining small specific volume and small specific weight.
A sensor module including a microelectromechanical systems (“MEMS”) gyroscope resonator and an accelerometer positioned adjacent the MEMS gyroscope resonator is disclosed herein. The MEMS gyroscope resonator and accelerometer can be co-fabricated on a sensor die and a control circuit can be electrically coupled to the sensor die. The control circuit can be configured to receive signals from and control the MEMS gyroscope resonator and the accelerometer. An interposer can be positioned between and mechanically coupled to the sensor module and a substrate, wherein the interposer is configured to relieve stresses imposed by an operating environment on the sensor module and the substrate.
A method of forming an optical bridge waveguide between an optical element and an optical waveguide layer fabricated on a substrate such as a PIC platform. An optical element is heterogeneously integrated on the substrate. A first dielectric layer is deposited on the substrate and etched to a predetermined height. A second dielectric layer having a higher k than the first dielectric layer is deposited on the first dielectric layer, and a third dielectric layer having a lower k than the second dielectric layer is deposited on the second dielectric layer. The dielectric layers are formed such that the second dielectric layer provides an optical bridge waveguide between the optical element and optical waveguide layer, with the first and third dielectric layers providing a lower and upper cladding, respectively, for the optical bridge waveguide.
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A method for stabilizing disrupted neural signals received by a brain-computer interface (BCI), where a translation model is trained on a clean and disrupted dataset and is used to translate a disrupted signal to a clean signal. The clean dataset is based on the data that is received the same day the BCI is calibrated and the disrupted dataset is based on data received the same day that the model is trained. Based on the variation in daily signal disruption, the training model is retrained each day and a new translation model is applied to a disrupted dataset.
Cookware and a method of manufacture thereof are provided. The method comprises forming a fluid conduit defining a volume in a base of the cookware, the base comprising a heating zone configured for thermal communication with the fluid conduit. A working fluid is introduced to the fluid conduit via an open end of the fluid conduit. A liquid phase of the working fluid occupies less than the volume of the fluid conduit. The fluid conduit is Sized and configured to form vapor segments and liquid segments interspersed throughout the fluid conduit from the working fluid. The open end of the fluid conduit is sealed to define a closed fluid system.
Disclosed are various methods for creating optical elements through holographic fabrication. One method includes positioning a reflector in an optical path, disposing a first substrate proximal to the reflector along the optical path, disposing a first photosensitive film on the side of the first substrate facing the reflector, transmitting a light beam at a first polarization from a light source along the optical path, reflecting the light beam off the reflector, wherein the reflected light beam has a second polarization, receiving the reflected light beam through the first film and the first substrate, and applying a liquid crystal layer to the first photosensitive film to reproduce the alignment pattern of the first film on the liquid crystal layer.
Laterally-gated transistors and lateral Schottky diodes are disclosed. The FET includes a substrate, source (304) and drain (306) electrodes channel, a gate electrode structure (307), and a dielectric layer (312). The gate electrode structure includes an electrode (308) in contact with the channel and a lateral field plate (332) adjacent to the electrode. The dielectric layer is disposed between the lateral field plate and the channel. The lateral field plate contacts the dielectric layer and to modulate an electric field proximal to the gate electrode proximal to the drain or source electrodes. Also disclosed is a gate electrode structure with lateral field plates symmetrically disposed relative to the gate electrode. Also disclosed in a substrate with dielectric structures buried in the substrate remote from the gate electrode structure. A lateral Schottky diode having an anode structure includes an anode, cathodes and lateral field plates located between the anode and the cathodes.
H01L 29/41 - Electrodes characterised by their shape, relative sizes or dispositions
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
18.
Laterally-gated transistors and lateral Schottky diodes with integrated lateral field plate structures
Laterally-gated transistors and lateral Schottky diodes are disclosed. The FET includes a substrate, source and drain electrodes, channel, a gate electrode structure, and a dielectric layer. The gate electrode structure includes an electrode in contact with the channel and a lateral field plate adjacent to the electrode. The dielectric layer is disposed between the lateral field plate and the channel. The lateral field plate contacts the dielectric layer and to modulate an electric field proximal to the gate electrode proximal to the drain or source electrodes. Also disclosed is a gate electrode structure with lateral field plates symmetrically disposed relative to the gate electrode. Also disclosed in a substrate with dielectric structures buried in the substrate remote from the gate electrode structure. A lateral Schottky diode having an anode structure includes an anode (A), cathodes (C) and lateral field plates located between the anode and the cathodes.
A multi-spectral lens comprises a circular polarizer and a tunable cholesteric filter having an associated reflection band. Incoming light is circularly polarized to one handedness by the circular polarizer, and the tunable cholesteric filter transmits the circularly polarized light and reflects the opposite handedness of the circularly polarized light if within the reflection band of the filter, with the reflection band of the tunable cholesteric filter varying with a control voltage. In a preferred embodiment, a mirror is arranged to receive light transmitted by the tunable cholesteric filter and reflect it back towards the filter with flipped handedness, with the reflected light with flipped handedness that is within the reflection band of the tunable cholesteric filter reflected by the tunable cholesteric filter back toward the mirror. The architecture described effectively converts the reflection band of a tunable cholesteric filter into a tunable bandpass filter for a multi-spectral imaging lens.
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
G02F 1/137 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
A multi-spectral lens comprises a circular polarizer and a tunable cholesteric filter having an associated reflection band. Incoming light is circularly polarized to one handedness by the circular polarizer, and the tunable cholesteric filter transmits the circularly polarized light and reflects the opposite handedness of the circularly polarized light if within the reflection band of the filter, with the reflection band of the tunable cholesteric filter varying with a control voltage. In a preferred embodiment, a mirror is arranged to receive light transmitted by the tunable cholesteric filter and reflect it back towards the filter with flipped handedness, with the reflected light with flipped handedness that is within the reflection band of the tunable cholesteric filter reflected by the tunable cholesteric filter back toward the mirror. The architecture described effectively converts the reflection band of a tunable cholesteric filter into a tunable bandpass filter for a multi-spectral imaging lens.
A method of forming a bipolar transistor with a vertical collector contact requires providing a transistor comprising a plurality of epitaxial semiconductor layers on a first substrate, and providing a host substrate. A metal collector contact is patterned on the top surface of the host substrate, and the plurality of epitaxial semiconductor layers is transferred from the first substrate onto the metal collector contact on the host substrate. The first substrate is suitably the growth substrate for the plurality of epitaxial semiconductor layers. The host substrate preferably has a higher thermal conductivity than does the first substrate, which improves the heat dissipation characteristics of the transistor and allows it to operate at higher power densities. A plurality of transistors may be transferred onto a common host substrate to form a multi-finger transistor.
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
A method of forming a bipolar transistor with a vertical collector contact requires providing a transistor comprising a plurality of epitaxial semiconductor layers on a first substrate, and providing a host substrate. A metal collector contact is patterned on the top surface of the host substrate, and the plurality of epitaxial semiconductor layers is transferred from the first substrate onto the metal collector contact on the host substrate. The first substrate is suitably the growth substrate for the plurality of epitaxial semiconductor layers. The host substrate preferably has a higher thermal conductivity than does the first substrate, which improves the heat dissipation characteristics of the transistor and allows it to operate at higher power densities. A plurality of transistors may be transferred onto a common host substrate to form a multi-finger transistor.
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
An ohmic contact (10, 12) for a multiple channel (20) FET (14) comprises a plurality of slit-shaped recesses (16) in a wafer (18) on which a multiple channel FET resides, with each recess having a depth at least equal to the depth of the lowermost channel layer. Ohmic metals (22) in and on the sidewalls (40, 42) of each recess provide ohmic contact to each of the multiple channel layers. An ohmic metal- filled linear connecting recess contiguous with the outside edge of each recess may be provided, as well as an ohmic metal contact layer on the top surface of the wafer over and in contact with the ohmic metals in each of the recesses. The present ohmic contact typically serves as a source and/or drain contact for the multiple channel FET. Also described is the use of a regrown material to make ohmic contact with multiple channels, with the regrown material preferably having a corrugated structure.
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
A vision-cued random-access LIDAR system and method winch determines the location and/or navigation path of a moving platform. A vision system on a moving platform identifies a region of interest. The system classifies objects within the region of interest, and directs random-access LIDAR to ping one or more of the classified objects. The platform is located in three dimensions using data from die vision system and LIDAR. The steps of classifying, directing, and locating are preferably performed continuously while the platform is moving and/or the vision system's field-of-view (FOV) is changing. Objects are preferably classified using at least one smart-vision algorithm, such as a machine-learning algorithm.
A vision-cued random-access LIDAR system and method which determines the location and/or navigation path of a moving platform. A vision system on a moving platform identifies a region of interest. The system classifies objects within the region of interest, and directs random-access LIDAR to ping one or more of the classified objects. The platform is located in three dimensions using data from the vision system and LIDAR. The steps of classifying, directing, and locating are preferably performed continuously while the platform is moving and/or the vision system's field-of-view (FOV) is changing. Objects are preferably classified using at least one smart-vision algorithm, such as a machine-learning algorithm.
A sleep induction device includes a headband, multiple transcranial stimulation electrodes, and control electronics to drive the electrodes. The sleep induction device may be worn by an awake user prior to attempting sleep. The control electronics are configured to cause the stimulation electrodes to emit a sequence of stimulation waveforms separated by interstimulus periods. The stimulation waveforms may have the characteristics of low-delta waveforms that may characterize non-REM stage 3 sleep. The stimulation period may last from about 4-8 seconds and the interstimulus period may last from about 10 to 30 seconds. A sleep induction session may include multiple alternating stimulation and non-stimulation periods. The sleep induction session may last for about 5 minutes to about 30 minutes.
A61B 5/00 - Measuring for diagnostic purposes Identification of persons
A61B 5/374 - Detecting the frequency distribution of signals, e.g. detecting delta, theta, alpha, beta or gamma waves
A61M 21/00 - Other devices or methods to cause a change in the state of consciousnessDevices for producing or ending sleep by mechanical, optical, or acoustical means, e.g. for hypnosis
A61M 21/02 - Other devices or methods to cause a change in the state of consciousnessDevices for producing or ending sleep by mechanical, optical, or acoustical means, e.g. for hypnosis for inducing sleep or relaxation, e.g. by direct nerve stimulation, hypnosis, analgesia
A61N 1/08 - Arrangements or circuits for monitoring, protecting, controlling or indicating
A61N 1/36 - Applying electric currents by contact electrodes alternating or intermittent currents for stimulation, e.g. heart pace-makers
27.
System and method for noninvasive identification of cognitive and behavioral goals
A brain machine interface system for use with an electroencephalogram to identify a behavioral intent of a person is disclosed. The system includes an electroencephalogram configured to sense electromagnetic signals generated by a brain of a person. The electromagnetic signals include a time component and a frequency component. A monitor monitors a response of the person to a stimulus and a characteristic of the stimulus. A synchronization module synchronizes the sensed electromagnetic signals with the response and the characteristic to determine a set of electromagnetic signals corresponding to the monitored response and the characteristic. A processor processes the set of electromagnetic signals and extracts feature vectors. The feature vectors define a class of behavioral intent. The processor determines the behavioral intent of the person based on the feature vectors. A brain machine interface and a method for identifying a behavioral intent of a person is also disclosed.
A61B 5/246 - Detecting biomagnetic fields, e.g. magnetic fields produced by bioelectric currents specially adapted for magnetoencephalographic [MEG] signals using evoked responses
A61B 5/316 - Modalities, i.e. specific diagnostic methods
A61B 5/374 - Detecting the frequency distribution of signals, e.g. detecting delta, theta, alpha, beta or gamma waves
A61B 3/113 - Objective types, i.e. instruments for examining the eyes independent of the patients perceptions or reactions for determining or recording eye movement
A61B 5/11 - Measuring movement of the entire body or parts thereof, e.g. head or hand tremor or mobility of a limb
A61B 5/00 - Measuring for diagnostic purposes Identification of persons
G06F 3/04842 - Selection of displayed objects or displayed text elements
28.
Fully reticulated detectors for curved focal plane arrays
A curved FPA comprises an array of detectors, with mesas etched between the detectors such that they are electrically and physically isolated from each other. Metallization deposited at the bottom of the mesas reconnects the detectors electrically and thereby provides a common ground between them. Strain induced by bending the FPA into a curved shape is across the metallization and any backfill epoxy, rather than across the detectors. Indium bumps are evaporated onto respective detectors for connection to a readout integrated circuit (ROIC). An ROIC coupled to the detectors is preferably thinned, and the backside of the ROIC may also include mesas such that the ROIC is reticulated.
A single crystal multilayer low-loss optical component including first and second layers made from dissimilar materials, with the materials including the first layer lattice-matched to the materials including the second layer. The first and second layers are grown epitaxially in pairs on a growth substrate to which the materials of the first layer are also lattice-matched, such that a single crystal multilayer optical component is formed. The optical component may further include a second substrate to which the layer pairs are wafer bonded after being removed from the growth substrate.
A multi-color light detector includes a first photodiode. The light detector further includes a second photodiode stacked on the first photodiode and defining a via. The light detector further includes a first conductor extending through the via, contacting the first photodiode, and designed to transmit a first signal corresponding to a first light detected by the first photodiode. The light detector further includes a second conductor contacting the second photodiode and designed to transmit a second signal corresponding to a second light detected by the second photodiode.
A semiconductor material emitting device is positioned such that its output flux impinges on a substrate at a non-perpendicular angle, so as to grow a first epilayer which is linearly graded in the direction perpendicular to the growth direction. The linear grading can be arranged such that, for example, each row of pixels has a different cutoff wavelength, thereby making it possible to provide a spectroscopic FPA without the use of filters. The non-perpendicular angle and/or the flux intensity can be adjusted to achieve a desired compositional grading. A spectral ellipsometer may be used to monitor the composition of the epilayer during the fabrication process, and to control the intensity of the flux.
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Systems and methods for a machine learning system to learn a new skill without catastrophically forgetting an existing skill and to continually learn in a self-supervised manner during operation, without human intervention.
G06K 9/62 - Methods or arrangements for recognition using electronic means
G06N 20/10 - Machine learning using kernel methods, e.g. support vector machines [SVM]
G06N 3/04 - Architecture, e.g. interconnection topology
G06F 18/22 - Matching criteria, e.g. proximity measures
G06F 18/2413 - Classification techniques relating to the classification model, e.g. parametric or non-parametric approaches based on distances to training or reference patterns
G06V 10/778 - Active pattern-learning, e.g. online learning of image or video features
G10L 15/30 - Distributed recognition, e.g. in client-server systems, for mobile phones or network applications
G06V 10/70 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning
G10L 17/08 - Use of distortion metrics or a particular distance between probe pattern and reference templates
G06V 10/74 - Image or video pattern matchingProximity measures in feature spaces
G06F 18/243 - Classification techniques relating to the number of classes
Cookware and a method of manufacture thereof are provided. The method comprises forming a fluid conduit defining a volume in a base of the cookware, the base comprising a heating zone configured for thermal communication with the fluid conduit. A working fluid is introduced to the fluid conduit via an open end of the fluid conduit. A liquid phase of the working fluid occupies less than the volume of the fluid conduit. The fluid conduit is Sized and configured to form vapor segments and liquid segments interspersed throughout the fluid conduit from the working fluid. The open end of the fluid conduit is sealed to define a closed fluid system.
A filtration membrane coating comprising a hydrophilic polymer, a surfactant, and one or more charged compounds, each containing one or more sulfonate functionalities and one or more linkable functionalities selected from the group consisting of amine, monochlorotriazine, and dichlorotriazine. The hydrophilic polymer and surfactant form a thin primer layer which is also superhydrophilic. The primer layer improves flux, and enables improved adhesion of the one or more charged compounds, which form a charged dye layer on top of the primer layer when enhances rejection of charged divalent ions. The coating can be applied while the membrane is packaged in its final form, such as in a spiral wound or other configuration.
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
B01D 71/82 - Macromolecular material not specifically provided for in a single one of groups characterised by the presence of specified groups, e.g. introduced by chemical after-treatment
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
28 - Games; toys; sports equipment
Goods & Services
Downloadable computer application software for mobile phones, namely, software for enhancing sleep Electrical stimulation apparatus for the head for enhancing sleep Non-medical electrical stimulation body-training apparatus for sleep enhancement
A light sensor includes an N-type semiconductor. The light sensor further includes a P-type semiconductor stacked on at least a portion of the N-type semiconductor, partially defining a trench extending into the P-type semiconductor, and having a trench portion aligned with the trench and extending farther into the N-type semiconductor than other portions of the P-type semiconductor. The light sensor also includes a passivation layer stacked on and contacting the P-type semiconductor and partially defining the trench that extends through the passivation layer and into the P-type semiconductor. The light sensor further includes an electrical contact stacked on the passivation layer, positioned within the trench, and extending through the passivation layer into the P-type semiconductor such that photons received by the N-type semiconductor generate photocurrent resulting in a voltage at the electrical contact.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
A micro-machined optical shutter includes an entry layer with a through-passage having an input side adapted to receive incoming light and an output side, and an exit layer with a through-passage having an input side comprising a pinhole and an output side. The entry and exit layers are vertically aligned, thereby providing an optical path such that light exiting the entry layer enters the exit layer via the pinhole unless the optical path is interrupted. An actuation plane positioned between the entry and exit layers comprises a shutter blade and an actuator arranged to move the shutter blade laterally with respect to the pinhole when actuated. The shutter blade preferably has a reflective angled surface such that, when the blade covers the pinhole, the angled surface redirects light on the optical path away from the pinhole, preferably into a micromachined beam dump.
G02B 26/02 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
G02B 7/04 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification
38.
Through-substrate vias formed by bottom-up electroplating
A method of forming void-free, high aspect ratio through-substrate vias by “bottom-up” electroplating. In one embodiment, the method requires providing a substrate, forming a dielectric layer on the substrate's bottom side, providing at least one perforation through the dielectric layer, forming a via hole through the substrate from its top side to the dielectric layer and over the perforations, forming an isolation layer on the sidewalls of the via hole, forming a metal seed layer on the bottom side of the dielectric layer, electroplating the seed layer such that all of the perforations are plugged, and electroplating up the via hole from the plugs to fill the via hole.
ph, a transfer gate connected in series between the PPD and a first node, a low-gain select transistor connected between the first node and a second node, a reset transistor connected between the second node and a reset voltage, a capacitance connected between the second node and a first constant potential, and a source-follower transistor whose source, gate and drain are connected to an output node, the first node and a second constant potential, respectively. When properly arranged, a vertically integrated (3D) global-shutter pinned PPD pixel is provided, which uses an overflow integration capacitor and subthreshold conduction of the reset transistor for increased dynamic range. Global shutter operation is achieved by storing the pixel output on sampling capacitors in another semiconductor layer at the end of integration.
A differential data transmitter with pre-emphasis comprises a main driver coupled to receive an input data stream and to produce a main differential output stream which varies with the input stream, circuitry which provides a delayed and inverted version of the input stream, and a first pre-emphasis driver coupled to the output of the circuitry and arranged to produce a pre-emphasis differential output stream which varies with the delayed and inverted input stream. The pre-emphasis differential output stream is coupled to the main differential output stream to produce differential data transmitter output signals. The main and pre-emphasis drivers operate in parallel, with the pre-emphasis driver boosting the output signals when consecutive bits in the input stream change state, and attenuating the output signals when consecutive bits in the input stream do not change state.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
A method of fabricating a voltage-tunable liquid crystal-based notch filter requires filling at least two LC cells with cholesteric LC material to create LH and RH LC cells while applying heat to the cell substrates such that their temperatures are raised to near, but below, the clearing point, such that the LC material remains in the cholesteric state. An AC voltage is applied and turned off repeatedly while the LC cells cool down to room temperature, to cause the LC molecules to temporarily deviate from their intrinsic helical alignment. The cells are passed under a UV light sufficient to create cross-linked polymer networks, and self-compensation is used to compensate for in-band retardation. The resulting LH and RH LC cells are stacked such that the electrodes on adjacent substrates are connected to form a common electrode.
G02F 1/133 - Constructional arrangementsOperation of liquid crystal cellsCircuit arrangements
G02F 1/137 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
G02F 1/1334 - Constructional arrangements based on polymer-dispersed liquid crystals, e.g. microencapsulated liquid crystals
G02F 1/1347 - Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
A light sensor includes an N-type semiconductor. The light sensor further includes a P-type semiconductor stacked on at least a portion of the N-type semiconductor, partially defining a trench extending into the P-type semiconductor, and having a trench portion aligned with the trench and extending farther into the N-type semiconductor than other portions of the P-type semiconductor. The light sensor also includes a passivation layer stacked on and contacting the P-type semiconductor and partially defining the trench that extends through the passivation layer and into the P-type semiconductor. The light sensor further includes an electrical contact stacked on the passivation layer, positioned within the trench, and extending through the passivation layer into the P-type semiconductor such that photons received by the N-type semiconductor generate photocurrent resulting in a voltage at the electrical contact.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
43.
Interface-free thermal management system for high power devices co-fabricated with electronic circuit
A thermal-interface-material (TIM)-free thermal management apparatus includes a thermally-conductive unitary structure having an integrated circuit (IC) side and cooling system side, the thermally-conductive unitary structure including a plurality of high aspect ratio micro-pillars or porous structures extending from the IC side and a cooling system extending from the cooling system side. The cooling system may be selected from the group consisting of: a vapor chamber, micro-channel cooler, jet-impingement chamber, and air-cooled heat sink. The cooling system and the plurality of high aspect ratio micro-pillars form part of the same homogenous and thermally-conductive unitary structure.
F28F 3/04 - Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations the means being integral with the element
F28D 15/02 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes
F28D 15/04 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes with tubes having a capillary structure
H01L 23/427 - Cooling by change of state, e.g. use of heat pipes
F28D 21/00 - Heat-exchange apparatus not covered by any of the groups
44.
Spectroscopic focal plane array and method of making same
A semiconductor material emitting device is positioned such that its output flux impinges on a substrate at a non-perpendicular angle, so as to grow a first epilayer which is linearly graded in the direction perpendicular to the growth direction. The linear grading can be arranged such that, for example, each row of pixels has a different cutoff wavelength, thereby making it possible to provide a spectroscopic FPA without the use of filters. The non-perpendicular angle and/or the flux intensity can be adjusted to achieve a desired compositional grading. A spectral ellipsometer may be used to monitor the composition of the epilayer during the fabrication process, and to control the intensity of the flux.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
A HDR CTIA pixel which provides automatic gain selection, and spatial and temporal coherence. The pixel comprises an input node for connection to a photocurrent, and an output node. The pixel includes a CTIA which comprises a “high gain” integration capacitor and a first reset switch connected between the input and output nodes, a “low gain” integration capacitor connected between the input node and a first node, a second reset switch connected between the first node and the output node, and a first FET connected across the second reset switch. In operation, the first FET is off during the reset phase, and is conditionally turned on during or after the integration phase. The CTIA also includes an amplifier having an inverting input connected to the input node and an output connected to the output node. The pixel can be operated in “static low-gain control” and “dynamic low-gain control” modes.
A FET with a buried gate structure. The FET's gate electrode comprises a plurality of buried gate structures, the tops of which extend above the substrate's top surface and the bottoms of which are buried to a depth at least equal to that of the bottom of the channel layer, or the 2DEG plane within a channel layer for a HEMT, such that the buried gate structures contact the channel layer only from its sides. A head portion above and not in contact with the substrate's top surface contacts the tops of and interconnects all of the buried gate structures. Drain current is controlled by channel width modulation by lateral gating of the channel layer by the buried gates structures. The FET may include at least one field plate which comprises a slit structure in which the field plate is divided into segments.
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A FET with a buried gate structure. The FET' s gate electrode comprises a plurality of buried gate structures, the tops of which extend above the substrate's top surface and the bottoms of which are buried to a depth at least equal to that of the bottom of the channel layer, or the 2DEG plane within a channel layer for a HEMT, such that the buried gate structures contact the channel layer only from its sides. A head portion above and not in contact with the substrate's top surface contacts the tops of and interconnects all of the buried gate structures. Drain current is controlled by channel width modulation by lateral gating of the channel layer by the buried gates structures. The FET may include at least one field plate which comprises a slit structure in which the field plate is divided into segments.
A FET employing a micro-scale device array structure comprises a substrate on which an epitaxial active channel area has been grown, with a plurality of micro-cells uniformly distributed over the active channel area. Each micro-cell comprises a source electrode, a drain electrode, and at least one gate electrode, with a first metal layer interconnecting either the drain or the source electrodes, a second metal layer interconnecting the gate electrodes, and a third metal layer interconnecting the other of the drain or source electrodes. Each micro-cell preferably comprises a source or drain electrode at the center of the micro-cell, with the corresponding drain or source electrode surrounding the center electrode. The number and width of the gate electrodes in each micro-cell may be selected to achieve a desired power density and/or heat distribution, and/or to minimize the FET's junction temperature. The FET structure may be used to form, for example, HEMTs or MESFETs.
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 21/337 - Field-effect transistors with a PN junction gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
50.
High flux, chlorine resistant coating for sulfate removal membranes
A filtration membrane coating comprising a hydrophilic polymer, a surfactant, and one or more charged compounds, each containing one or more sulfonate functionalities and one or more linkable functionalities selected from the group consisting of amine, monochlorotriazine, and dichlorotriazine. The hydrophilic polymer and surfactant form a thin primer layer which is also superhydrophilic. The primer layer improves flux, and enables improved adhesion of the one or more charged compounds, which form a charged dye layer on top of the primer layer when enhances rejection of charged divalent ions. The coating can be applied while the membrane is packaged in its final form, such as in a spiral wound or other configuration.
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
B01D 71/82 - Macromolecular material not specifically provided for in a single one of groups characterised by the presence of specified groups, e.g. introduced by chemical after-treatment
C02F 1/44 - Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
A magnetic field coil assembly includes a plurality of stacked dielectric layers, each of the plurality of stacked dielectric layers having a partial-loop conductive trace on a first side of the layer, a via interconnect in communication with the partial-loop conductive trace and extending from the first side of the layer to a side of the layer opposite from the first side, and a vapor cell reception aperture; and a vapor cell axially extending through the plurality of vapor cell reception apertures so that the plurality of partial-loop conductive traces is electrically connected serially to form a continuous coil disposed around the vapor cell that would create a magnetic field upon application of a current.
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
H03L 7/26 - Automatic control of frequency or phaseSynchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
G01R 33/032 - Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday
A physics package apparatus for a compact atomic device includes a container having a plurality of slots and an open end, a first vapor cell carrier slidably seated in one of the plurality of slots, a vapor cell coupled to the first vapor cell carrier; and a lid sealably enclosing the open end so that the vapor cell is sealably enclosed in the container.
G01C 19/60 - Electronic or nuclear magnetic resonance gyrometers
G01R 33/26 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux using optical pumping
G04F 5/14 - Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
H03B 17/00 - Generation of oscillations using a radiation source and a detector
H03L 7/26 - Automatic control of frequency or phaseSynchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
G01R 33/28 - Details of apparatus provided for in groups
G01R 33/24 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
Systems, devices, and methods including a bullet; a retroreflector array adhered to a base of the bullet, the retroreflector array having prism facets with a periodicity between 0.2 mm-2.0 mm; and a cover disposed over the retroreflector array and hermetically sealed at the base of the bullet; where the cover is disposed over the retroreflector array in a first position prior to firing, and where the cover is released from the base of the bullet in a second position after firing.
F42B 12/38 - Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for dispensing materialsProjectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for producing chemical or physical reactionProjectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for signalling of tracer type
F41G 3/08 - Aiming or laying means with means for compensating for speed, direction, temperature, pressure, or humidity of the atmosphere
Provided is an apparatus, system, and method for targeted memory enhancement. A computer processing circuit receives a plurality of electroencephalography (EEG) signals from a plurality of spatially separated EEG sensors located on the head of a subject that is asleep. A first process of the computer processing system determines a sleep state of the subject and upon determining that the subject is in sleep stage 2 or 3 based on a specific EEG signal, the processing system triggers a second process of the computer processing system that determines a transition event in the specific EEG signal, and upon detecting the transition event delivers an intervention to the subject designed to evoke a specific neurophysiological change to the subject.
A61N 1/36 - Applying electric currents by contact electrodes alternating or intermittent currents for stimulation, e.g. heart pace-makers
A61B 5/0482 - Electroencephalography using biofeedback
A61M 21/02 - Other devices or methods to cause a change in the state of consciousnessDevices for producing or ending sleep by mechanical, optical, or acoustical means, e.g. for hypnosis for inducing sleep or relaxation, e.g. by direct nerve stimulation, hypnosis, analgesia
55.
System and method for noninvasive identification of cognitive and behavioral goals
A brain machine interface system for use with an electroencephalogram to identify a behavioral intent of a person is disclosed. The system includes an electroencephalogram configured to sense electromagnetic signals generated by a brain of a person. The electromagnetic signals include a time component and a frequency component. A monitor monitors a response of the person to a stimulus and a characteristic of the stimulus. A synchronization module synchronizes the sensed electromagnetic signals with the response and the characteristic to determine a set of electromagnetic signals corresponding to the monitored response and the characteristic. A processor processes the set of electromagnetic signals and extracts feature vectors. The feature vectors define a class of behavioral intent. The processor determines the behavioral intent of the person based on the feature vectors. A brain machine interface and a method for identifying a behavioral intent of a person is also disclosed.
G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
A61B 5/16 - Devices for psychotechnicsTesting reaction times
A61B 3/113 - Objective types, i.e. instruments for examining the eyes independent of the patients perceptions or reactions for determining or recording eye movement
A61B 5/04 - Measuring bioelectric signals of the body or parts thereof
A61B 5/048 - Detecting the frequency distribution of signals
A61B 5/0484 - Electroencephalography using evoked response
A61B 5/11 - Measuring movement of the entire body or parts thereof, e.g. head or hand tremor or mobility of a limb
A61B 5/00 - Measuring for diagnostic purposes Identification of persons
G06F 3/0484 - Interaction techniques based on graphical user interfaces [GUI] for the control of specific functions or operations, e.g. selecting or manipulating an object, an image or a displayed text element, setting a parameter value or selecting a range
56.
SYSTEM AND METHOD FOR NONINVASIVE IDENTIFICATION OF COGNITIVE AND BEHAVIORAL GOALS
A brain machine interface system for use with an electroencephalogram to identify a behavioral intent of a person is disclosed. The system includes an electroencephalogram configured to sense electromagnetic signals generated by a brain of a person. The electromagnetic signals include a time component and a frequency component. A monitor monitors a response of the person to a stimulus and a characteristic of the stimulus. A synchronization module synchronizes the sensed electromagnetic signals with the response and the characteristic to determine a set of electromagnetic signals corresponding to the monitored response and the characteristic. A processor processes the set of electromagnetic signals and extracts feature vectors. The feature vectors define a class of behavioral intent. The processor determines the behavioral intent of the person based on the feature vectors. A brain machine interface and a method for identifying a behavioral intent of a person is also disclosed.
A bidirectional amplifier includes first and second ports, with a first summing node connected to the first port and a second summing node connected to the second port. First and second gain stages are connected between the first and second summing nodes, respectively, and a first node. First and second feedback stages are also connected between the first and second summing nodes, respectively, and the first node. The amplifier operates in a first mode in which an amplified version of a signal applied to the first port is provided at the second port, or a second mode in which an amplified version of a signal applied to the second port is provided at the first port. The first and second gain stages are preferably first and second common emitter cascode arrangements, and the first and second feedback stages are preferably first and second emitter followers.
H03F 1/22 - Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
A dual-threaded bushing and spacer assembly capable of accepting standard adhesive staking and thereby enabling compliance with NASA space flight fastener staking requirements. The assembly comprises a bushing having a head with top and bottom surfaces, inner threads, and outer threads, and a spacer having top and bottom surfaces and arranged to accept the bushing. This is achieved by providing a counterbored countersink in the spacer which provides a countersunk surface within the spacer. The countersunk surface provides a contact surface for the bushing head's bottom surface when the bushing is installed in the spacer. The spacer is further arranged such that the countersunk surface is such that, when the bushing is installed, the bushing's top surface is below the spacer's top surface. When so arranged, adhesive staking can be placed between the bushing's top surface and the spacer's vertical counterbored surface.
The sintered electrical contact material described in this specification includes at least one salt dispersed within a silver matrix, and no more than 100 ppm of cadmium and cadmium compounds. The sintered electrical contact material exhibit contact resistances much lower than commercially available silver composites. The salts dispersed within the silver matrix represent a new class of additives for silver composites for high and low current applications.
H01H 1/023 - Composite material having a noble metal as the basic material
H01H 11/04 - Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
C22C 32/00 - Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 3/16 - Both compacting and sintering in successive or repeated steps
B22F 3/24 - After-treatment of workpieces or articles
B22F 5/12 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of tubes or wires
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
60.
Interface-free thermal management system for high power devices co-fabricated with electronic circuit
A thermal-interface-material (TIM)-free thermal management apparatus includes a thermally-conductive unitary structure having an integrated circuit (IC) side and cooling system side, the thermally-conductive unitary structure including a plurality of high aspect ratio micro-pillars or porous structures extending from the IC side and a cooling system extending from the cooling system side. The cooling system may be selected from the group consisting of: a vapor chamber, micro-channel cooler, jet-impingement chamber, and air-cooled heat sink. The cooling system and the plurality of high aspect ratio micro-pillars form part of the same homogenous and thermally-conductive unitary structure.
F28F 3/04 - Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations the means being integral with the element
F28D 15/02 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes
F28D 15/04 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes with tubes having a capillary structure
H01L 23/427 - Cooling by change of state, e.g. use of heat pipes
F28D 21/00 - Heat-exchange apparatus not covered by any of the groups
Systems, devices, and methods for determining a time of flight (TOF) of a first bullet fired from a gun to pass a target plane of a target; determining a location of an aimpoint on the target in an imager field of view (FOV) relative to a disturbed reticle at a time the first bullet is fired by the gun; determining a location of the first bullet relative to the location of the aimpoint on the target at the TOF in the imager FOV; and determining an updated location of the disturbed reticle based on a difference between the location of the first bullet and the location of the aimpoint on the target at the time the first bullet crosses the target plane and a difference between the location of the disturbed reticle and the location of the aimpoint on the target at the time the first bullet was fired.
F41J 5/00 - Target indicating systemsTarget-hit or score detecting systems
F41G 1/473 - Sighting devices for particular applications for lead-indicating or range-finding, e.g. for use with rifles or shotguns
F42B 12/38 - Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for dispensing materialsProjectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for producing chemical or physical reactionProjectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for signalling of tracer type
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
G01S 17/66 - Tracking systems using electromagnetic waves other than radio waves
G01S 17/89 - Lidar systems, specially adapted for specific applications for mapping or imaging
F41G 3/16 - Sighting devices adapted for indirect laying of fire
G01S 17/02 - Systems using the reflection of electromagnetic waves other than radio waves
62.
Retroreflector array and cover for optical bullet tracking
Systems, devices, and methods including a bullet; a retroreflector array adhered to a base of the bullet, the retroreflector array having prism facets with a periodicity between 0.2 mm-2.0 mm; and a cover disposed over the retroreflector array and hermetically sealed at the base of the bullet; where the cover is disposed over the retroreflector array in a first position prior to firing, and where the cover is released from the base of the bullet in a second position after firing.
F42B 10/00 - Means for influencing, e.g. improving, the aerodynamic properties of projectiles or missilesArrangements on projectiles or missiles for stabilising, steering, range-reducing, range-increasing or fall-retarding
F42B 30/00 - Projectiles or missiles, not otherwise provided for, characterised by the ammunition class or type, e.g. by the launching apparatus or weapon used
F42B 12/38 - Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for dispensing materialsProjectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for producing chemical or physical reactionProjectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for signalling of tracer type
F42B 33/00 - Manufacture of ammunitionDismantling of ammunitionApparatus therefor
Systems, devices, and methods including a bullet (114,1102); a retroreflector array (1104) adhered to a base of the bullet (410, 610), the retroreflector array (1104) having prism facets with a periodicity between 0.2 mm - 2.0 mm; and a cover (1112) disposed over the retroreflector array and hermetically sealed at the base (1106) of the bullet (1102); where the cover (1112) is disposed over the retroreflector array (1104) in a first position prior to firing, and where the cover is released from the base of the bullet in a second position after firing.
F42B 12/38 - Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for dispensing materialsProjectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for producing chemical or physical reactionProjectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for signalling of tracer type
F42B 33/00 - Manufacture of ammunitionDismantling of ammunitionApparatus therefor
Systems, devices, and methods for determining a time of flight (TOF) of a first bullet fired from a gun to pass a target plane (116) of a target (102,214,414,614); determining a location of an aimpoint on the target (214,414,614) in an imager field of view (FOV) (216) relative to a disturbed reticle (210) at a time the first bullet (114) is fired by the gun; determining a location of the first bullet (114) relative to the location of the aimpoint on the target at the TOF in the imager FOV (216); and determining an updated location of the disturbed reticle (222) based on a difference between the location of the first bullet (114) and the location of the aimpoint on the target (214,414,614) at the time the first bullet crosses the target plane and a difference between the location of the disturbed reticle and the location of the aimpoint on the target at the time the first bullet was fired.
F41G 3/08 - Aiming or laying means with means for compensating for speed, direction, temperature, pressure, or humidity of the atmosphere
F41G 3/06 - Aiming or laying means with rangefinder
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
F42B 12/38 - Projectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for dispensing materialsProjectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for producing chemical or physical reactionProjectiles, missiles or mines characterised by the warhead, the intended effect, or the material characterised by the warhead or the intended effect for signalling of tracer type
A penetrator device has an outer housing of non-conductive, insulating material having a through bore, at least one conductive pin formed in one or two parts extending through the housing and having a first end portion and a second end portion extending out of the respective first and second ends of the housing, a first cladding layer bonded over the first end portion of the pin to form a first bonded assembly, a second cladding layer bonded over the second end portion of the pin to form a second bonded assembly, and the material of the first and second cladding layer comprising a corrosion resistant conductive material different from the pin material.
An osmotic transport apparatus includes a heat conducting chamber having an inner wall, a heat absorption end and a heat dissipation end, an osmotic membrane extending substantially longitudinally along an inner wall of the heat conducting chamber from the heat absorption end to the heat dissipation end, a liquid salt solution disposed in the osmotic membrane, and an inner vapor cavity so that when heat is applied to the heat absorption end, vapor is expelled from the osmotic membrane at the heat absorption end, is condensed on the osmotic membrane at the heat dissipation end, and is drawn into the osmotic membrane at the heat dissipation end for passive pumping transport back to the heat absorption end as more condensate is drawn through the osmotic membrane.
F28D 15/04 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes with tubes having a capillary structure
F28D 15/02 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes
B01D 53/34 - Chemical or biological purification of waste gases
Cookware such as griddles and pots are formed with an oscillation mini-channel that winds back-and-forth between direct and indirect heating regions. An operating fluid that occupies 30-90 percent of the volume of the oscillation mini-channel is placed under vacuum. The mini-channel is dimensioned to produce capillary forces that create vapor bubbles and liquid slugs interspersed throughout the oscillation mini-channel. Heating of the direct heating region creates oscillatory movements of the vapor bubbles and liquid slugs that transfers heat from the direct heating region to the indirect heating region to maintain a more uniform temperature across the food-heating zone. The cookware may exhibit an effective thermal conductivity of at least 1,000 W/m.K.
An arrangement for making electrical contact to a vertical capacitor having top and bottom metal layers separated by a dielectric, and at least one trench. Recesses are formed in an oxide layer over the capacitor to provide access to the top and bottom metal layers. The recesses include contacting portions preferably positioned such that there is no overlap between them and any of the trenches. Metal in the recesses, preferably copper, forms electrical contacts to the vertical capacitor's metal layers and enables reliable bonding to copper metallization on other layers such as an ROIC layer. ‘Dummy’ capacitors may be tiled on portions of the IC where there are no vertical capacitors, preferably with the top surfaces of their top metal at a height approximately equal to that of the top surface of the vertical capacitor's top metal, thereby enabling the IC to be planarized with a uniform planarization thickness.
H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
This invention pertains to a source follower circuit suitable for receiving and buffering an input voltage and providing the buffered input voltage to a sampling capacitor via a sampling switch. The source follower circuit employs a slew enhancement circuit which enables the source follower to have fast settling for both high-to-low and low-to-high transitions.
H03K 3/00 - Circuits for generating electric pulsesMonostable, bistable or multistable circuits
H03K 5/04 - Shaping pulses by increasing durationShaping pulses by decreasing duration
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
70.
MULTI-FUNCTIONAL HIGH TEMPERATURE STRUCTURE FOR THERMAL MANAGEMENT AND PREVENTION OF EXPLOSION PROPAGATION
A system for thermal management and structural containment includes an enclosure (120), a heat source (100) disposed within the enclosure (120); and a wick (105) encompassing at least a portion of an outer surface of the heat source (100).
A multicolor imaging device capable of imaging two or more wavelengths with a single pixel comprises an avalanche photodiode having a material composition such that only one carrier causes substantially all of the impact ionization that occurs within the photodiode. The photodiode is arranged such that, when reverse-biased, the photodiode's gain varies with the photon energy of incident light. The photodiode, preferably a PIN avalanche photodiode or a separate absorber-multiplier photodiode, produces an output signal which can include at least two components produced in response to two different wavelengths of incident light. Circuitry receiving the output signal would typically include a means of extracting each of the components from the output signal.
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
72.
Detector systems having stray light suppression using a retro-reflector shield and negative luminescence
An infrared detector system is provided for detecting infrared radiation from an infrared radiation source or a scene. The system includes a first area that is semiconductor-based and biased to produce negative luminescence, the first area including at least one semiconductor-based detector. The detector system further includes at least one additional area being semiconductor-based and biased to produce negative luminescence. A low-emissivity specular retro-reflector shield is configured to reflect infrared radiation and covers the first area and the at least one additional area. The shield defines an aperture to allow the at least one semiconductor-based detector to receive incident rays of the infrared radiation from the infrared radiation source or the scene via a low-scatter, low-emission optical system such that the radiation incident from the infrared radiation source or scene substantially fills the solid angle defined by the aperture at any point in the first area.
A biohybrid dual chamber fuel cell and method for producing sustainable electrical power from unprocessed biomass include a microbial fuel cell (MFC) for processing the biomass into a clean fuel, a direct alcohol fuel cell (DAFC) operatively connected to the microbial fuel cell for oxidizing the clean fuel to generate electrical power and a separation barrier in the form of a reverse osmosis membrane disposed intermediate the MFC and the DAFC which prevents the diffusion of impurities from the MFC into the DAFC and the return flow of oxidation by-products from the DAFC into the MFC.
H01M 8/16 - Biochemical fuel cells, i.e. cells in which microorganisms function as catalysts
H01M 8/0612 - Combination of fuel cells with means for production of reactants or for treatment of residues with means for production of gaseous reactants from carbon-containing material
H01M 8/1011 - Direct alcohol fuel cells [DAFC], e.g. direct methanol fuel cells [DMFC]
74.
Electromagnetic device having layered magnetic material components and methods for making same
A micro fabricated electromagnetic device and method for fabricating its component structures, the device having a layered magnetic core of a potentially unlimited number of alternating insulating and magnetic layers depending upon application, physical property and performance characteristic requirements for the device. Methods for fabricating the high performing device permit cost effective, high production rates of the device and its component structures without any degradation in device performance resulting from component layering.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01F 41/24 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
C22C 19/07 - Alloys based on nickel or cobalt based on cobalt
C22C 19/03 - Alloys based on nickel or cobalt based on nickel
75.
Multi-functional structure for thermal management and prevention of failure propagation
A system for thermal management and structural containment includes a first battery cell having first and second terminal ends, and a first capillary void matrix formed in an outer casing of the first battery cell.
H01M 10/655 - Solid structures for heat exchange or heat conduction
F28D 15/04 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes with tubes having a capillary structure
H01M 50/20 - MountingsSecondary casings or framesRacks, modules or packsSuspension devicesShock absorbersTransport or carrying devicesHolders
H01M 50/30 - Arrangements for facilitating escape of gases
H01M 50/213 - Racks, modules or packs for multiple batteries or multiple cells characterised by their shape adapted for cells having curved cross-section, e.g. round or elliptic
H01M 50/502 - Interconnectors for connecting terminals of adjacent batteriesInterconnectors for connecting cells outside a battery casing
76.
Multi-functional structure for thermal management and prevention of failure propagation
A system for thermal management and structural containment includes a first battery cell having first and second terminal ends, and a first capillary void matrix disposed about an outer casing of the first battery cell.
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
F28D 15/04 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes with tubes having a capillary structure
H01M 50/20 - MountingsSecondary casings or framesRacks, modules or packsSuspension devicesShock absorbersTransport or carrying devicesHolders
H01M 50/30 - Arrangements for facilitating escape of gases
H01M 50/213 - Racks, modules or packs for multiple batteries or multiple cells characterised by their shape adapted for cells having curved cross-section, e.g. round or elliptic
H01M 50/502 - Interconnectors for connecting terminals of adjacent batteriesInterconnectors for connecting cells outside a battery casing
A method of isolating bad pixels on a wafer comprising the steps of determining physical locations of the bad pixels on the wafer, creating a mask based on the physical locations of the bad pixels, imprinting the mask onto the wafer, and hybridizing the wafer onto a readout integrated circuit (ROIC).
A coated granular filtration medium (10) is formed by the deposition of an electrolyte layer (16) onto core particles (12). The electrolyte layer (16) comprises a cationic polyelectrolyte. The coated granular filtration medium (10) provides a synergistic combination of filtration and in situ coagulation that enables efficient, effective, and economical decontamination of industrial and other wastewaters.
A coated granular filtration medium is formed by the deposition of an electrolyte layer onto core particles. The electrolyte layer comprises a cationic polyelectrolyte. The coated granular filtration medium provides a synergistic combination of filtration and in situ coagulation that enables efficient, effective, and economical decontamination of industrial and other wastewaters.
A flat optogenetic cuff interface (FOCI) is configured for functional optical stimulation of axons in a single fascicle of a peripheral nerve bundle in which the axons have been genetically modified to express light sensitive proteins for excitation or inhibition of the nerves. The FOCI is configured to gradually reshape the single fascicle to a final height between 0.2 mm and 0.5 mm by reorganizing the individual axons within the fascicle without reshaping (and damaging) the individual axons. The FOCI facilitates stimulation of axons over the entire cross-section of the reshaped fascicle within the power limitations for pulsed laser energy. An electrical interface may be included to sense nerve activity of either the stimulated axons to provide closed-loop feedback to control the optical sources or stimulated axons of a different modality to record the response. The FOCI may be used as an interface for prosthetic devices to restore lost sensory or motor function, to augment human sensor or motor performance or to modulate autonomic functions.
A capacitive trans-impedance amplifier circuit with charge injection compensation is provided. A feedback capacitor is connected between an inverting input port and an output port of an amplifier. A MOS reset switch has source and drain terminals connected between the inverting input and output ports of the amplifier, and a gate terminal controlled by a reset signal. The reset switch is open or inactive during an integration phase, and closed or active to electrically connect the inverting input port and output port of the amplifier during a reset phase. One or more compensation capacitors are provided that are not implemented as gate oxide or MOS capacitors. Each compensation capacitor has a first port connected to a compensation signal that is a static signal or a toggling compensation signal that toggles between two compensation voltage values, and a second port connected to the inverting input port of the amplifier.
H03F 3/08 - Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
83.
Multi-scale correspondence point matching using constellation of image chips
A method of matching images A and B of the same scene taken at different locations in the scene is provided by matching correspondence points in the image by evaluating pixel characteristics from nearby regions using a constellation of image chips and utilizing joint information across multiple resolution levels in a probability framework. Since each image chip is small, each chip in one image potentially can be matched with a number of chips in the other image. The accumulation of evidence (probability) over all image chips within the constellation over multiple resolution levels reduces the ambiguity. The use of a constellation of image chips removes the requirement present in most visual point matching techniques to special feature points (e.g. corner points) as the correspondence points.
A moving platform roll sensor system comprises an ellipsometric detector capable of detecting a polarized beam within the detector's line-of-sight, and measuring the beam's polarization state, such that the polarization state indicates the rotational orientation of the moving platform with respect to a predefined coordinate system. The ellipsometric detector comprises a venetian blind component through which the polarized beam passes, arranged such that the intensity of the exiting beam varies with its incident angle with respect to the moving platform, a polarizing beamsplitter which splits the exiting beam into components having orthogonal circular polarizations, the relative intensities of which vary with the relative polarization vector of the beam, and first and second detectors which receive the first and second orthogonal circular components and generate respective outputs that vary with the intensities of their received components. The beamsplitter preferably comprises a quarter wave plate and a polarization grating.
G01D 5/34 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
G01D 5/347 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
A moving object command link system includes a transmitter which outputs a EM beam and a steering mechanism which directs the beam toward one or more objects, at least one of which is moving. The system may include a variable attenuator which modulates the average output power of the beam, and/or a divergence controller to maintain a desired beam size. The beam may be polarized, and the system may include a polarization modulator which changes the beam's polarization in accordance with a predetermined sequence and schedule. The system may include a 1×2 switch to selectively provide the beam to one of first and second outputs. A tiltable dichroic beam splitter may be used to couple beams received from first and second objects to track cameras having respective boresights that are offset with respect to each other.
A system and method is disclosed for fabricating a heat spreader system, including providing a plurality of bottom microporous wicks recessed in a bottom substrate, bonding a center substrate to the bottom substrate, and bonding a top substrate having a top chamber portion to the center substrate to establish a first vapor chamber with said plurality of bottom microporous wicks.
F28D 15/02 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes
H01L 23/427 - Cooling by change of state, e.g. use of heat pipes
B23P 15/26 - Making specific metal objects by operations not covered by a single other subclass or a group in this subclass heat exchangers
F28D 15/04 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes with tubes having a capillary structure
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H05K 3/22 - Secondary treatment of printed circuits
F28F 21/04 - Constructions of heat-exchange apparatus characterised by the selection of particular materials of ceramicConstructions of heat-exchange apparatus characterised by the selection of particular materials of concreteConstructions of heat-exchange apparatus characterised by the selection of particular materials of natural stone
A thermal interface material system includes a thermally conductive porous matrix, the thermally conductive porous matrix having a plurality of interstitial voids, and a thermally conductive colloidal suspension disposed on each side of the thermally conductive porous matrix to inhibit thermal pump-out of the thermally conductive colloidal suspension so that the thermally conductive porous matrix and thermally conductive colloidal suspension collectively form a thermally conductive porous pad.
A shared counter circuit for a column-parallel single-slope ADC includes an n-bit counter; n low-voltage (LV) drivers connected to receive respective counter output bits and to provide a logic high or logic low output signal which tracks the received bit, the voltage difference between the logic high and logic low output signals being less than Vdd; and a plurality of sets of regenerative latches powered by a supply voltage Vdd, each of which receives an output from a respective LV driver and latches and regenerates the received output as a rail-to-rail CMOS signal upon the occurrence of a trigger event. One typical trigger event occurs when a periodic ramp voltage exceeds an input voltage provided to the ADC which may originate, for example, from the columns of a photodetector array.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/363 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise
H04N 3/14 - Scanning details of television systemsCombination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
89.
Moving platform roll angle determination system using RF communications link
An orientation tracking system for a moving platform includes a transmitter which generates an beam having a known polarization with respect to a predefined coordinate system. The moving platform includes an ellipsometric detector capable of detecting the polarized beam when within the line-of-sight of the transmitter, and measuring its polarization state. The polarization state indicates the rotational orientation of the moving platform with respect to the predefined coordinate system. The beam could also be used to convey guidance commands to the platform.
H04B 14/00 - Transmission systems not characterised by the medium used for transmission
G01S 5/02 - Position-fixing by co-ordinating two or more direction or position-line determinationsPosition-fixing by co-ordinating two or more distance determinations using radio waves
90.
Comparator circuits with local ramp buffering for a column-parallel single slope ADC
A comparator circuit suitable for use in a column-parallel single-slope analog-to-digital converter comprises a comparator, an input voltage sampling switch, a sampling capacitor arranged to store a voltage which varies with an input voltage when the sampling switch is closed, and a local ramp buffer arranged to buffer a global voltage ramp applied at an input. The comparator circuit is arranged such that its output toggles when the buffered global voltage ramp exceeds the stored voltage. Both DC- and AC-coupled comparator embodiments are disclosed.
An amplifier cell apparatus has an RF input node, a first power transistor in communication with the input node through a first input impedance matching network, a second power transistor in communication with the input node through a second input impedance matching network, and an RF output node in communication with the first and second power transistors through a single output impedance matching network so that the first and second input impedance matching networks are disposed on an RF input side of the amplifier cell.
A two-terminal detector has a back-to-back p/n/p SWIR/MWIR stack structure, which includes P-SWIR absorber, N-SWIR, wide bandgap bather, N-MWIR absorber, and P-MWIR layers, with contacts on the P-MWIR and P-SWIR layers. The junction between the SWIR layers and the junction between the MWIR layers are preferably passivated. The detector stack is preferably arranged such that a negative bias applied to the top of the stack reverse-biases the MWIR junction and forward-biases the SWIR junction, such that the detector collects photocurrent from MWIR radiation. A positive bias forward-biases the MWIR junction and reverse-biases the SWIR junction, such that photocurrent from SWIR radiation is collected. A larger positive bias induces electron avalanche at the SWIR junction, thereby providing detector sensitivity sufficient to provide low light level passive amplified imaging. Detector sensitivity in this mode is preferably sufficient to provide high resolution 3-D eye-safe LADAR imaging.
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
93.
Micro-fabricated integrated coil and magnetic circuit and method of manufacturing thereof
A micro-fabricated electromagnetic device is provided for on-circuit integration. The electromagnetic device includes a core. The core has a plurality of electrically insulating layers positioned alternatingly between a plurality of magnetic layers to collectively form a continuous laminate having alternating magnetic and electrically insulating layers. The electromagnetic device includes a coil embedded in openings of the semiconductor substrate. An insulating material is positioned in the cavity and between the coil and an inner surface of the core. A method of manufacturing the electromagnetic device includes providing a semiconductor substrate having openings formed therein. Windings of a coil are electroplated and embedded in the openings. The insulating material is coated on or around an exposed surface of the coil. Alternating magnetic layers and electrically insulating layers may be micro-fabricated and electroplated as a single and substantially continuous segment on or around the insulating material.
A laser target board apparatus is provided for detecting spatial and temporal intensity distribution of high energy laser beams. The laser target board apparatus may include a panel having a plurality of openings and a plurality of optical rods placed therein. The laser target board apparatus may further have an optic fiber array positioned substantially parallel to and behind the panel and separated from the panel by a predetermined distance. At least one lens is configured to receive photons emitted from a second end of each optic fiber unit of the optic fiber array, and at least one camera is configured to detect the photons. A processor is configured to analyze temporal and spatial distribution of intensity of the received high energy laser beam based on data generated by the at least one camera.
A substrate-removed, surface passivated, and anti-reflective (AR) coated detector assembly is provided. The assembly has an AR coating or passivation layer which includes a wide bandgap thin-film dielectric/passivation layer integrated therein. The wide bandgap thin-film dielectric/passivation layer is positioned proximal to a back interface of a substrate-removed detector assembly. A method of manufacturing the detector assembly includes etching a backside of a partially-removed-substrate detector assembly to obtain an etched detector assembly removed from a substrate. A wide bandgap layer is deposited, in a vacuum chamber, on the etched detector assembly without utilizing an adhesive layer. Additional anti-reflective coating layers are deposited, in the same vacuum chamber, on the wide bandgap layer to form an anti-reflective coating layer with the wide bandgap layer integrated therein. The wide bandgap layer is positioned proximal to an interface portion between the anti-reflective coating layer and the detector assembly.
An SEU protection circuit comprises first and second storage means for receiving primary and redundant versions, respectively, of an n-bit wide data value that is to be corrected in case of an SEU occurrence; the correction circuit requires that the data value be a 1-hot encoded value. A parity engine performs a parity operation on the n bits of the primary data value. A multiplexer receives the primary and redundant data values and the parity engine output at respective inputs, and is arranged to pass the primary data value to an output when the parity engine output indicates ‘odd’ parity, and to pass the redundant data value to the output when the parity engine output indicates ‘even’ parity. The primary and redundant data values are suitably state variables, and the parity engine is preferably an n-bit wide XOR or XNOR gate.
H03M 13/00 - Coding, decoding or code conversion, for error detection or error correctionCoding theory basic assumptionsCoding boundsError probability evaluation methodsChannel modelsSimulation or testing of codes
G06F 11/10 - Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
97.
Morphing ceramic composite components for hypersonic wind tunnel
In one embodiment, a morphable composite three-dimensional structure is disclosed. The morphable composite three-dimensional structure comprises a flexible fiber-reinforced ceramic composite comprising a fiber preform and a ceramic matrix material infused therein. The flexible fiber-reinforced ceramic composite defines a flowpath having a three-dimensional cross-section. The cross-section of the flowpath is variable along the length of the flowpath. A plurality of anchors are integrally formed in the fiber preform. The plurality of anchors extend through a thickness of the ceramic matrix. The plurality of anchors are configured to couple to at least one actuator. The at least one actuator is actuatable to vary the three-dimensional cross-section of the flowpath.
B32B 3/04 - Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by a layer folded at the edge, e.g. over another layer
B32B 19/02 - Layered products essentially comprising natural mineral fibres or particles, e.g. asbestos, mica bonded with or embedded in a plastic substance
B28B 1/00 - Producing shaped articles from the material
98.
Optical sensor and filter assembly with epoxy mounting structure and method of assembly
A mounting structure between the spectral filter and optical sensor includes one or more beads of epoxy that are bonded to the face of the sensor at locations adjacent and bonded to the edge of the spectral filter around its perimeter. Placement of the epoxy so that it bonds to the edge of the spectral filter improves the robustness of the package to sheer stresses. Placement of the epoxy at the edge, suitably in discrete spot bonds, also avoids putting epoxy in the optical path, contaminating the optically active area or using epoxy to control the gap height. Alignment of the spectral filter in the plane (x,y) may be achieved using fiducial marks on the sensor and filter. Alignment of the spectral filter out of the plane (z) may be achieved using incompressible spacer balls that set the gap height precisely to the diameter of the ball. Alternately, the spectral filter may be placed in direct contact with the optically active area of the sensor.
A system for thermal management and structural containment includes an enclosure, a heat source disposed within the enclosure; and a wick encompassing at least a portion of an outer surface of the heat source.
H01M 10/6569 - Fluids undergoing a liquid-gas phase change or transition, e.g. evaporation or condensation
F28D 15/04 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes with tubes having a capillary structure
H01M 50/213 - Racks, modules or packs for multiple batteries or multiple cells characterised by their shape adapted for cells having curved cross-section, e.g. round or elliptic
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
100.
Integral textile structure for 3-D CMC turbine airfoils
An integral textile structure for 3-D CMC turbine airfoils includes top and bottom walls made from an angle-interlock weave, each of the walls comprising warp and weft fiber tows. The top and bottom walls are merged on a first side parallel to the warp fiber tows into a single wall along a portion of their widths, with the weft fiber tows making up the single wall interlocked through the wall's thickness such that delamination of the wall is inhibited. The single wall suitably forms the trailing edge of an airfoil; the top and bottom walls are preferably joined along a second side opposite the first side and parallel to the radial fiber tows by a continuously curved section in which the weave structure remains continuous with the weave structure in the top and bottom walls, the continuously curved section being the leading edge of the airfoil.
