A method for manufacturing a plurality of mechanical resonators (100) in a manufacturing wafer (10), the resonators being intended to be fitted to an adjusting member of a timepiece, the method comprising the following steps: (a) manufacturing a plurality of resonators in at least one reference wafer according to reference specifications, such manufacture comprising at least one lithography step to form patterns of the resonators on or above the reference wafer and a step of machining in the reference plate using the patterns; (b) for the at least one reference plate, establishing a map indicative of the dispersion of stiffnesses of the resonators relative to an average stiffness value; (c) dividing the map into fields and determining a correction to be made to the dimensions of the resonators for at least one of the fields in order to reduce the dispersion; (d) modifying the reference specifications for the lithography step so as to make the corrections to the dimensions for the at least one field in the lithography step; (e) manufacturing resonators in a manufacturing wafer using the modified specifications.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
B81C 99/00 - Subject matter not provided for in other groups of this subclass
G04B 17/06 - Oscillators with hairsprings, e.g. balance
G04D 7/10 - Measuring, counting, calibrating, testing, or regulating apparatus for hairsprings
A MEMS device comprises a first layer (1), a second layer (2) and a third layer (3) sealed together. A mobile structure (7.1, 7.2) in the second layer (2) is defined by openings (8.1, 8.2) in the second layer (2). In the first layer (1), there is at least one first-layer cavity (6.1, 6.2) with an opening towards the mobile structure (7.1, 7.2) of the second layer (2). In the third layer (3), there is at least one third-layer cavity (9) with an opening towards the mobile structure (7.1, 7.2) of the second layer (2). Therefore, the third-layer cavity (9) and the second layer (2) define a space within the MEMS device, A getter layer (10.1, 10.2) arranged on a surface of said space. The getter layer (10.1, 10.2) is preferably arranged on a surface of the second layer (2) and in particular, the getter layer (10.1, 10.2) is arranged on a static part of the second layer (2). Alternatively, the MEMS device has a third-layer cavity (24) with at least two recesses (25.1, 25.2, 25.3) and the getter layer (26.1, 26.2, 26.3) is arranged on a surface of the recesses (25.1, 25.2, 25.3).
A micromechanical sensor device for measuring z-axis angular rate comprises a substrate (1) defining a substrate plane and a z-axis perpendicular to the substrate plane. A first vibratory structure (104a) has a first shuttle-mass (105a) and a first proof-mass (106a), the first proof-mass (106a) being coupled to the first shuttle-mass (105a) by a first sense- mode spring (1 10a-d). There is a second vibratory structure (104b) in a mirror-symmetrical setup (except for the electrodes). A first and second suspension structure suspends the first and second shuttle-mass (105a,b) above the substrate (1) flexibly in drive-mode direction (x). The first and second shuttle-masses (105a, 105b) are suspended above the substrate for movement at least in drive-mode direction (x), wherein drive-mode direction and sense-mode direction are parallel to the substrate plane. Further more, the first and second vibratory structures (104a, 104b) are elastically coupled to each other. The device has separate structural elements (107a-d, 109a-d; 108a-d) for separately defining at least one of the following pairs of frequencies: (1) the anti-phase frequency and the in- phase/anti-phase frequency separation of the drive-mode, (2) the anti-phase frequency and the in-phase/anti-phase frequency separation of the sense-mode
G01C 19/5747 - Structural details or topology the devices having two sensing masses in anti-phase motion each sensing mass being connected to a driving mass, e.g. driving frames
A MEMS device comprises a first layer (1), a second layer (2) and a third layer (3) sealed together. A mobile structure (7.1, 7.2) in the second layer (2) is defined by openings (8.1, 8.2) in the second layer (2). In the first layer ( 1), there is at least one first-layer cavity (6.1, 6.2) with an opening towards the mobile structure (7.1, 7.2) of the second layer (2). In the third layer (3), there is at least one third-layer cavity (9) with an opening towards the mobile structure (7.1, 7.2) of the second layer (2). Therefore, the third-layer cavity (9) and the second layer (2) define a space within the MEMS device, A getter layer (10.1, 10.2) arranged on a surface of said space. The getter layer (10.1, 10.2) is preferably arranged on a surface of the second layer (2) and in particular, the getter layer (10.1, 10.2) is arranged on a static part of the second layer (2). Alternatively, the MEMS device has a third-layer cavity (24) with at least two recesses (25.1, 25.2, 25.3) and the getter layer (26.1, 26.2, 26.3) is arranged on a surface of the recesses (25.1, 25.2, 25.3).
A sensor for measuring physical parameters such as acceleration, rotation, magnetic field, comprises a substrate (13) defining a substrate plane and at least one sensing plate (11, 12) suspended above the substrate (13) for performing a movement having at least a first component in a sensing direction. The sensing direction is orthogonal to the substrate plane. There is at least one detection arm (14.1, 14.2) that is suspended above the substrate (13) for performing a rotational movement about a rotation axis parallel to the substrate plane. An out-of-plane coupling structure (17.1, 17.4) is used to couple the first component of the movement of said sensing plate (11, 12) to said detection arm (14.1, 14.2) for generating the rotational movement of the detection arm (14.1, 14.2). A rotation detection structure cooperates with the detection arm (14.1, 14.2) for detecting the rotational movement of the detection arm (14.1, 14.2) with respect to the substrate plane. A pivot element (17.2, 17.3) is arranged at a distance from the out-of-plane coupling structure (17.1, 17.4), said pivot element (17.2, 17.3) coupling the sensing plate to a geometric reference plane (19), which is at a fixed distance above the substrate plane, so that the sensing plate (11, 12) performs a tilting out-of-plane movement.
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
G01C 19/5747 - Structural details or topology the devices having two sensing masses in anti-phase motion each sensing mass being connected to a driving mass, e.g. driving frames
G01P 15/08 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values
A micromechanical sensor device for measuring angular z-axis motion comprises two vibratory structures (2.1, 2.2, 7.1, 7.2) each having at least one proof mass (2.1, 2.2). A suspension structure (3.1, 4.1, 4.2, 5.1, 6.1,.... 6.4) maintains the two vibratory structures (2.1, 2.2, 7.1, 7.2) in a mobile suspended position above the substrate ( 1) for movement parallel to the substrate plane in drive-mode direction (x-axis) and in sense-mode direction (y-axis). A coupling support structure (4.1, 4.2) connects the coupling structure (5.1, 5.2, 6.1,... 6.4) to an anchor structure (3.1, 3.2) and enables a rotational swinging movement of the coupling structure (5.1, 5.2), the rotational swinging movement having an axis of rotation that is perpendicular to the substrate plane. Each of the vibratory structures (2.1, 2.2, 7.1, 7.2) comprises at least one shuttle mass (7.1, 7.2) coupled to the at least one proof mass (2.1, 2.2) by sense-mode springs (8.1, 8.4), which are more flexible in sense-mode direction than in drive-mode direction (x), for activating a vibration movement of each vibratory structure (2.1, 2.2, 7.1, 7.2). A sensing electrode structure ( 10.1, 10.2) for each proof mass (2.1, 2.2) is designed for detecting sense-mode movements that are parallel to the substrate plane, The coupling support structure (4.1, 4.2) is designed to also enable a translational movement of the coupling structure (5. 1, 5.2, 6. 1,... 6.4) in drive- mode direction (x).
G01C 19/5747 - Structural details or topology the devices having two sensing masses in anti-phase motion each sensing mass being connected to a driving mass, e.g. driving frames
A wafer level package comprises at least two self-supporting elements (1, 5) connected to each other for forming a hollow inside space (8.1,..., 8.7). An opening (3.1,..., 3.7) connects the hollow inside space to an outside surface of the at least two elements (1, 5). A getter material (4.1,..., 4.7) is provided at an outside main surface (1.1) of the two self- supporting elements (1, 5). The getter material (4.1,..., 4.7) may be provided at the outer main face of the cap element and may form a layer covering the predominant part of the said outer surface. The wafer level package may be used for housing a mobile structure (7.1,.... 7.7) of a MEMS device. The wafer level package is placed in a sealed housing with a housing space.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/057 - ContainersSeals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body the leads being parallel to the base
H01L 23/10 - ContainersSeals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
H01L 23/26 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances
A resonator micro-electronic inertial sensor, preferably a micro-electromechanical system (MEMS) sensor (e.g. a gyro), for detecting linear accelerations and rotation rates in more than one axis comprises: ・a proof-mass system (21.1, 21.4) flexibly suspended above a substrate for performing a rotational in-plane vibration about a central axis (24,) • a drive electrode system (D 1,.... D4) for driving the proof-mass system (21.1,.... 21.4) to perform said rotational in-plane vibration, • and a sensing electrode system (S 1, S8) connected to the proof-mass system (21.1,.... 21.4) for detecting linear accelerations or rotation rates in more than one axis. Said proof-mass system (21.1 21.4) has more than two proof-mass elements flexibly coupled (25.1a, 25.1 b) to each other. Each proof-mass element (21.1, 21.2) is directly and flexibly connected (23. 1, 25.1 a, 25.1 b) to an anchor structure (22) on the substrate (32). The proof-mass elements (21.1,.... 21.4) are preferably arranged In a ring-shaped configuration between an inner and an outer radius (R1, R2) with respect to the central axis (24).
G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
G01P 15/18 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration in two or more dimensions
A resonator micro-electronic gyro, preferably a micro-electromechanical system (MEMS) gyro comprises a first and a second resonator mass (1, 2) suspended for rotational vibration. The two masses (1, 2) are flexibly connected by four mechanical coupling elements (4, 5, 6, 7) for anti-phase vibration. There is at least one positive and at least one negative sensing electrode (S11+, S11-, S21+, S21-) on each resonator mass (1, 2) for detecting an out-of-plane output movement of the masses (1, 2). A detection circuit is connected to be said positive and negative sensing electrodes and determines the output signal by differential detection of the signals on the basis of the following formula: Sxout = ({S21 +} - M{S 11 +}) - ({S21-} - M{S 11-}), wherein {S21+}, {S21-} sensing electrode signals of the positive and negative detection electrode of the second mass, respectively; {S11+}, {S11-} sensing electrode signals of the positive and negative detection electrode of the first mass, respectively, μ = compensation factor.
G01C 19/5712 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
patents
