An anode structure according to an embodiment of the present disclosure is an anode structure applied to an anode of a lithium-ion secondary battery. The anode structure includes: an anode current collector, and a lithium alloy layer formed on the anode current collector. The lithium alloy layer has a stoichiometric composition represented by the formula Li1-x-yBixMgy (0
09 - Scientific and electric apparatus and instruments
Goods & Services
Optical inspection apparatus; Microscopes; Electronic spectrophotometer for use in identifying and measuring colors; Scientific apparatus, namely, spectrophotometer for measuring relative DNA, RNA and protein; Semiconductor testing apparatus; Magnetometers; Personal digital assistants; X-ray tubes not for medical purposes; Industrial X-ray apparatus; X-ray apparatus not for medical purposes; X-ray diffractometers; X-ray fluorescence analyzers; Photo electron spectroscopy analyzers, not for medical purposes; Scientific instrumentation for measuring chemical and compositional surface environments, not for medical use; Apparatus and instruments for electrophoresis and mass spectrometry; Scientific instrumentation for measuring thickness or refractive index of thin films, not for medical use; Scanning electron microscopes; Scanning probe microscopes; Microscopes and parts thereof, namely, atomic force microscopes; Microscopes and parts thereof, namely, scanning RHEED microscopes; Chromatography apparatus for laboratory use; Downloadable tutorial e-books in the field of photo electron spectroscopy analyzers and auger electron spectroscopy analyzers; Downloadable computer software for photo electron spectroscopy analyzers; Downloadable computer software for auger electron spectroscopy analyzers; Computer software, recorded, for photo electron spectroscopy analyzers; Computer software, recorded, for auger electron spectroscopy analyzers
An etching subject includes a silicon nitride film and a silicon oxide film. A method for selectively etching the silicon nitride film includes etching a surface oxide layer of the silicon nitride film by supplying a hydrogen fluoride gas to the etching subject, and then supplying radicals to the etching subject. The method further includes selectively etching the silicon nitride film by repeating a cycle. The cycle includes supplying the hydrogen fluoride gas to the etching subject, from which the surface oxide layer has been etched, and then supplying radicals to the etching subject. A ratio of an etching amount of the silicon nitride film relative to an etching amount of the silicon oxide film is referred to as a selectivity ratio. A first selectivity in the etching the surface oxide layer is lower than a second selectivity ratio in the selectively etching the silicon nitride film.
A sputtering gas containing a rare gas is introduced into a vacuum chamber 1 of a vacuum atmosphere, an electric power with a negative potential is supplied to a target 2, a positive potential is applied to the reflector plate 4, a plasma is generated, and subsequently the supply of the sputtering gas is stopped, then the target is sputtered while a self-holding discharge under low pressure of plasma is generated. A high-frequency bias power is supplied from a high-frequency power source 61 through an impedance matching device 62 to a stage 5 on which an object to be deposited is mounted. An electron matcher having at least one variable reactor to be electronically controlled is used as an impedance matching device, and a high-frequency bias power is intermittently supplied to the stage at a predetermined frequency.
OXIDE SEMICONDUCTOR THIN FILM FOR CHANNEL LAYER, THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, SPUTTERING TARGET FOR FORMING OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING SPUTTERING TARGET FOR FORMING OXIDE SEMICONDUCTOR THIN FILM
XYZZ, X, Y and Z are included in a prescribed range in a ternary system phase diagram of an equilateral triangle of an X-axis, a Y-axis and a Z-axis. The prescribed range is a range obtained by excluding, from a range in which 0 < X ≤ 0.8, 0.2 ≤ Y ≤ 0.8, and 0 < Z ≤ 0.3, and X + Y + Z = 1, a triangular range formed by a point (0.45, 0.55, 0), a point (0.2, 0.8, 0), and a point (0, 0.8, 0.2) when coordinates are defined as (X, Y, Z). The prescribed range includes boundary lines between the excluded triangle and the remaining range.
C04B 35/453 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
Embodiments relates to a deposition device for a display device and a method of replacing a magnet plate of the deposition device. The deposition device includes: a chamber, a deposition source in the chamber; a stage on the deposition source; a mask structure on the stage; a magnet plate on the mask structure; and a first driving mechanism connected to the magnet plate, where the magnet plate is detachably connected to the first driving mechanism.
C23C 14/04 - Coating on selected surface areas, e.g. using masks
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H10K 71/16 - Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
7.
PEELING DEVICE FOR DISPLAY DEVICE AND METHOD FOR DISPLAY DEVICE
A peeling device includes: a transport unit; a carrier movable on and along the transport unit and having a substrate tray accommodated therein; a rotatable peeling stage disposed on the transport unit; a support disposed on the peeling stage and movable on the peeling stage along an upstream direction of the transport unit, a downstream direction of the transport unit, a downward direction toward the peeling stage, and an upward direction opposite to the downward direction, and rotatable in a first rotation direction, and a second rotation direction opposite to the first rotation direction; a gripper connected to the support so as to be disposed between the support and the peeling stage; and a static eliminator disposed on a side of the peeling stage.
An embodiment relates to a device for changing a position of a carrier for manufacturing a display device. The device includes: a driving object disposed under a transport unit for transporting the carrier in which a substrate and a substrate tray are accommodated; a first rotating object connected to a first side of the driving object; a second rotating object connected to a second side of the driving object, opposite to the first side; a connecting portion connecting the first rotating object and the second rotating object to each other; and a support member on the connecting portion.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H10K 71/16 - Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
9.
DEPOSITION APPARATUS AND METHOD OF MAINTAINING THE SAME
A deposition apparatus includes a process chamber that provides a space to process a substrate, and including a side surface in which an opening is defined, a door configured to open or close the opening of the process chamber, and a deposition source configured to supply a deposition material to the substrate in the process chamber, and including an upper surface of which at least a portion is exposed through the opening when the opening is opened by the door.
A substrate processing apparatus and a substrate processing method are disclosed. A substrate processing method includes loading a substrate into a first load-lock chamber, loading the substrate and a carrier into a coupling chamber including a first transferer, seating the substrate on a first stage connected to the first transferer, transferring the carrier in a first direction using the first transferer and coupling the carrier with the substrate seated on the first stage concurrently, and unloading the substrate and the carrier from the coupling chamber.
An alignment apparatus according to the embodiments includes a plate, first to fourth connectors, first to third supports, a first driver, and a first holder. The first holder is configured to hold a tray on which a substrate is accommodated. The alignment apparatus may adjust a position and an angle of the tray in six degrees of freedom to more precisely align a mask and the substrate with each other.
A substrate stage holding a substrate to be treated in a vacuum chamber in which a target made of tungsten is mounted and a high-frequency power source supplying a high-frequency electric power to the substrate stage are provided. When a first plasma atmosphere is generated in the vacuum chamber, and sputtered particles generated by sputtering the target are adhered and accumulated on the substrate so that a tungsten film is deposited, a second plasma atmosphere is generated by supplying the high-frequency electric power to the substrate stage, and plus ions in the first plasma atmosphere are also caused to collide with the substrate. Provided that an area of a substrate holding surface of the substrate stage functioning as one electrode and an inner-surface area of the vacuum chamber functioning as the other electrode of the second plasma atmosphere are defined as an anode area and a cathode area, respectively.
The present invention relates to a method for forming a tungsten (W) film in a semiconductor device, by using a physical vapor deposition (PVD) sputtering method on a semiconductor substrate, the tungsten film forming method comprising: a) a first deposition step of depositing a tungsten film on the semiconductor substrate by using magnetron sputtering with a power density of less than 0.5 W/cm2; b) a step of modifying the surface of the deposited tungsten by performing RF bias processing under an inert gas atmosphere; and c) a second deposition step of additionally depositing a tungsten film on the deposited tungsten film by using magnetron sputtering of a power density of 0.5 W/cm2 or more.
A method for selectively etching a silicon nitride film can include supplying a hydrogen fluoride gas to an etching subject while heating the etching subject so that a temperature of the etching subject is maintained at a predetermined temperature included in a range of a first temperature to a second temperature, inclusive. The method can include supplying active radicals generated from a radical generation gas to the etching subject while heating the etching subject so that the temperature of the etching subject after being supplied with the hydrogen fluoride gas is maintained at the predetermined temperature.
Provided is a vapor deposition source for a vacuum treatment apparatus capable of forming molten metal spread over a wide range and depositing a Cu film at a relatively high film deposition rate. A vapor deposition boat 3 installed in a vacuum chamber 1 and a power source Ps for supplying electricity to the vapor deposition boat are provided. A vapor deposition material Em formed of copper is continuously or intermittently supplied to the vapor deposition boat having been heated to melt and evaporate the vapor deposition material to deposit a copper film on a vapor deposition object. The vapor deposition boat is composed of a ceramic or carbon and includes an additive metal material 7 including at least one metal element of titanium, zirconium, and vanadium, and is configured such that when the vapor deposition material is melted in the vapor deposition boat, the additive metal material is blended into the molten metal of the vapor deposition material.
To provide a tungsten target in which provision of pores which may cause generation of particles is suppressed, and the size and distribution profile of the pores can be controlled at high precision, and a method for producing the tungsten target. The tungsten target is formed of a sintered product of a tungsten powder. The target has a relative density of 99% or higher, and the number of pores having a size of 0.01 μm2 or more and less than 0.2 μm2 is 20 or less; the number of pores having a size of 0.2 μm2 or more and less than 1.8 μm2 is 5 or less; and the number of pores having a size of 1.8 μm2 or more is 1 or less, when the target is observed in an observation field of 0.15 mm2.
Provided is a shielding unit for a vacuum deposition device, the shielding unit being provided in a vacuum chamber 1 so that, during vacuum treatment conducted in the vacuum chamber having a vacuum atmosphere, a prescribed amount of light of a prescribed wavelength range from a component present in the vacuum chamber passes through an inspection window 7 provided in the chamber wall. The shielding unit inhibits contaminants resulting from the vacuum treatment from adhering to the inspection window, and reduces the frequency of inspection window replacements. The shielding unit includes: a first shielding part 8a disposed in front of the inspection window and allowing transmission of the light of the prescribed wavelength range; and a second shielding part 8b disposed in front of the first shielding part. The second shielding part is composed of plate-like members each having, along the circumferential direction, a plurality of through holes 88a, 88b penetrating in the front-rear direction, and driving motors 83a, 83b for rotationally driving the second shielding part are provided.
Provided is a vacuum deposition device capable of effectively suppressing the occurrence of bumping of a vapor deposition material and reducing the amount of splash that adheres to a vapor-deposited substance to the extent possible. The present invention comprises: a vapor deposition boat 3 including an accommodation section 31a disposed in a vacuum chamber 1; and a material supply unit Fu for supplying a wire-shaped vapor deposition material Em from above so as to abut against a bottom plate of the vapor deposition boat defining the accommodation section. The present invention comprises a measuring means 8 for measuring, when the vapor deposition material is melted and wet-spread in the accommodation section due to the vapor deposition material being supplied to the heated vapor deposition boat, the temperature of a molten metal Le of this wet-spread vapor deposition material at a plurality of locations. When the temperature difference between measured locations adjacent to each other exceeds a prescribed value, the material supply unit Fu is used to spread the molten surface of the vapor deposition material in the direction of the measurement location indicating the high temperature.
A film formation device according to one embodiment of the present invention includes a vacuum chamber, a conveyance roller, a vapor deposition source, a monitoring section, and a control section. The conveyance roller is disposed inside the vacuum chamber and supports a film-like base material. The vapor deposition source includes: a vapor deposition boat having a storage section for storing an evaporation material to be vapor-deposited on the base material supported by the conveyance roller; and a material supply section that supplies the evaporation material to the storage section. The evaporation material stored in the storage section is melted by electrical heating of the vapor deposition boat. The monitoring section includes a camera unit that acquires images of the molten evaporation material in the storage section. The control section controls, based on the output of the monitoring section, at least one of: the supply rate or the supply position of the evaporation material in the vapor deposition source to the storage section; and the electrical power supplied to the vapor deposition boat.
An analysis device according to the present invention comprises analysis equipment, a first laser light source, a first slit, a first detector, and a stage. The analysis equipment analyzes a sample. The first laser light source emits laser light. The first slit allows laser light which is emitted from the first laser light source and reflected by the surface of the sample to pass therethrough when the distance between the sample and the analysis equipment is a prescribed distance, and blocks the laser light, which is emitted from the first laser light source and reflected by the surface of the sample, when the distance between the sample and the analysis equipment differs from the prescribed distance. The first detector detects the laser light which has passed through the first slit. The stage, on which the sample is placed, is movable in a first direction toward or away from the analysis equipment.
An analysis device according to the present invention comprises an excitation source, a measuring instrument, an ultraviolet irradiation unit, an electron emitter, and a gas supply unit. The excitation source irradiates a region subject to analysis on the surface of a sample with excitation rays. The measuring instrument measures charged particles that are released from the region subject to analysis when said region is irradiated with the excitation rays. The ultraviolet irradiation unit emits ultraviolet rays. The electron emitter releases electrons toward the region subject to analysis when ultraviolet rays are incident from the ultraviolet irradiation unit. The gas supply unit supplies, to the optical path of the ultraviolet rays between the ultraviolet irradiation unit and the electron emitter, a gas composed of a substance that dissociates ions upon being irradiated with ultraviolet rays.
A manufacturing support device according to the present invention comprises an acquisition unit, a specification unit, and an output unit. The acquisition unit acquires an upper limit power consumption that can be used by a manufacturing device that manufactures a product through a manufacturing process in a vacuum. The specification unit specifies an operation parameter corresponding to the upper limit power consumption acquired by the acquisition unit and with which it is possible to manufacture the product in a certain quality in the manufacturing process. The output unit outputs the operation parameter specified by the specification unit.
G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
23.
VACUUM DEPOSITION SYSTEM AND VACUUM DEPOSITION METHOD
Provided is a vacuum deposition system that, without additional equipment, is capable of effectively suppressing adhesion of a splash onto a deposition object. A vacuum deposition system ES comprises: a vapor deposition boat 3 that includes a boat body 31 having a storage part 31a of a vapor deposition material Em; a material supply unit 6 for supplying the wire-shaped vapor deposition material from above so as to abut a bottom plate of the boat body; a power source Ps for heating the boat body by supplying power; and a control unit Uc. The vacuum deposition system ES further comprises an ammeter Am for detecting current at the time of energization by the power source, the current changing together with the amount of molten metal when the vapor deposition material melts and is wet-spread in the storage part. The control unit obtains the average value of the current values detected by the ammeter Am per unit time, and changes the current value by controlling the power source on the basis of each of the average values successively obtained.
A vacuum treatment apparatus includes a deposition unit and a plasma treatment unit. The deposition unit includes an evaporation source including a lithium metal and forms a lithium metal film on a base material. The plasma treatment unit exposes a surface of the lithium metal film formed on the base material to a discharge gas obtained by discharging a gas containing carbon and oxygen, and forms a lithium carbonate layer on the surface.
The invention relates to a film formation apparatus and a transportation method. The film formation apparatus includes a transport unit configured to transport a substrate, and a film formation unit configured to deposit a Li metal in a vacuum onto a film formation region of the substrate transported by the transport unit. The transport unit includes a plurality of rollers. At least one of the plurality of rollers is a wrinkle prevention roller. A static friction coefficient between the wrinkle prevention roller and the Li metal measured under an atmosphere with a dew point of −40° C. or lower is greater than 0.50 and equal to or less than 2.50. A Young's modulus of a surface of the wrinkle prevention roller is 2.5 GPa or less. The surface of the wrinkle prevention roller is formed of polypropylene.
A sputtering target which is formed of an oxide sintered body of an oxide of indium, magnesium, and tin represented by formula InXMgYSnZ, wherein X is 0.32 to 0.65, Y is 0.17 to 0.46, Z is greater than 0 and 0.22 or smaller, satisfying X+Y+Z=1.
The present disclosure relates to a process for pre-lithiation and an equipment for implementing the same. The process for pre-lithiation comprising evaporating lithium onto a surface of a negative electrode to form a lithium layer thereon and subjecting the negative electrode to a thermal treatment.
Provided is technology with which it is possible, when forming a metal film such as a Cu-containing film serving as a seed layer or a Ta-containing film serving as a base layer for the Cu-containing film on the inner surface of a trench serving as a fine recess Sf, to form a metal film with excellent coverage and with continuity on the inner-side surface thereof. A sputtering gas containing a rare gas is introduced into a vacuum chamber 1 in a vacuum atmosphere, electric power having a negative potential is applied to a target 2, a positive potential is applied to a reflector plate to generate plasma, and then the introduction of the sputtering gas is stopped and the target is sputtered while self-discharge is induced under low pressure. High-frequency bias electric power is inputted from a high-frequency power source 61 via an impedance matching device 62 to a stage 5 on which there is installed an object Sw on which a film is to be formed. An electronic matcher having an electronically controlled variable reactor is used as the impedance matching device, and the high-frequency bias electric power is intermittently inputted to the stage at a prescribed frequency.
A vacuum treatment device according to one form of the present invention comprises a vacuum chamber, a support body, and a surface treatment means. The support body has a base part and a surface layer. The base part is disposed in the vacuum chamber and is formed from a conductor. The surface layer is formed from a dielectric and covers the surface of the base part. The surface layer has a support surface for electrostatically adsorbing a base material to be treated. The surface treatment means treats the surface of the base material adsorbed on the support surface. The thickness of the surface layer is 200-800 μm. The surface roughness (Ra) of the support surface is 0.06-0.2 μm. The load length ratio at a cut level of 50% or greater is 90% or greater.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A plasma treatment device according to the present invention comprises: a vacuum chamber; a sputtering cathode having a target and a plurality of magnet units; a substrate support portion; a plasma-generating power supply; a gas atmosphere setting unit; and a magnetic field-generating power supply. The plurality of magnet units are arranged so as to generate a leakage magnetic field obtained by superposition of a plurality of magnetic fields generated by the plurality of magnet units in a deposition space facing a sputtered surface of the target. The plurality of magnet units are configured to vary the leakage magnetic field in a direction along a central axis passing through a center of the sputtered surface and extending in the thickness direction of the target, the radial direction with respect to the center of the sputtered surface, and the circumferential direction of the sputtered surface around the central axis.
C23C 14/35 - Sputtering by application of a magnetic field, e.g. magnetron sputtering
31.
OXIDE SEMICONDUCTOR THIN FILM, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME, AND SPUTTERING TARGET AND METHOD FOR MANUFACTURING SPUTTERING TARGET
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
The present invention enhances light extraction efficiency (LEE) in a 230 nm band UVC-LED. This AlGaN-based deep ultraviolet LED having a light emission wavelength λ has a photonic crystal periodic structure in a thickness direction, wherein the distance between an upper part of a quantum well layer and a bottom part of the photonic crystal periodic structure substantially satisfies a resonance condition λ/n of free end reflection. Here, n is the weighted average refractive index of a layer structure existing between the upper part of the quantum well layer and the bottom part of the photonic crystal periodic structure.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
A shutter device according to an aspect of the present invention comprises: a housing having an opening; a plurality of shutter plates; and a plurality of drive units. The plurality of drive units are connected to the plurality of shutter plates, and are configured so as to change the attitude of the plurality of shutter plates. At least a partial region of the opening is a passing region through which sputtered particles emitted from the target pass. The plurality of drive units are configured to change the state of the shutter plate to a closed state, a parallelized state, or an open state. In the closed state, the plurality of shutter plates are arranged so as to block at least the passing region for the sputtered particles. In the parallelized state, the shutter plates are arranged in such a manner that a part of the plurality of shutter plates is arranged in the passing region for the sputtered particles and the flying directions of the sputtered particles become parallel to each other. In the open state, the plurality of shutter plates retreat from the passing region for the sputtered particles.
[Object] To provide a plasma processing apparatus capable of expanding an formation region of plasma generated on an upper electrode side to increase the processing speed and a control method therefor.
[Object] To provide a plasma processing apparatus capable of expanding an formation region of plasma generated on an upper electrode side to increase the processing speed and a control method therefor.
[Solving Means] A plasma processing apparatus according to an embodiment of the present invention includes a vacuum chamber, a substrate-supporting stage, a counter electrode, and a resonant circuit. The substrate-supporting stage is disposed inside the vacuum chamber and is connected to a first high-frequency power supply circuit that supplies a high-frequency power at a first frequency. The counter electrode is disposed in opposite to the stage and is connected to a second high-frequency power supply circuit that supplies a high-frequency power at a second frequency. The resonant circuit allows high-frequency current at the second frequency from the counter electrode to pass therethrough.
An etching method includes generating reactive plasma containing hydrogen and nitrogen in a discharge tube having an inner surface formed from an inorganic oxide and supplying the reactive plasma to a processing chamber connected to the discharge tube, and generating a precursor containing fluorine and hydrogen in the processing chamber using the reactive plasma and a gas containing fluorine and supplying the precursor to an etching subject arranged in the processing chamber. The etching method includes supplying hydrogen plasma to the inner surface of the discharge tube in which the reactive plasma was generated, and supplying oxygen plasma to the inner surface to which the hydrogen plasma was supplied.
A crucible device (1) comprising: a body (2) having an internal space (2a) for housing a vapor deposition material (8); a cap (4) provided on the end (2b) of the body (2); and shielding plates (5a-5e) attached to the cap (4) so as to intersect the depth direction of the body (2).
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
ULVAC, INC. (Japan)
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
ULVAC, INC. (Japan)
Inventor
Tominaga, Junji
Miyata, Noriyuki
Asanuma, Shutaro
Miyaguchi, Yuusuke
Saito, Kazuya
Jinbo, Takehito
Horita, Kazumasa
Masuda, Takeshi
Abstract
Provided is a method of manufacturing a crystallized stacked structural body excellent in manufacturing efficiency. The present invention is characterized by including: a stacked structural body forming step of forming a stacked structural body (7) in which an Sb2Te3 layer (5) having a thickness of from 2 nm to 10 nm and a GeTe layer (6) having a thickness of more than 0 nm and 4 nm or less are stacked, and a trace addition element (S or Se) is incorporated at a content of from 0.05 at % to 10.0 at % into the GeTe layer (6) on an orientation control layer (4) configured to give, to the Sb2Te3 layer (5) and the GeTe layer (6) at the time of their crystallization, a common crystal axis, the step being performed under a temperature of less than 100° C. including room temperature; an Sb2Te3 layer-crystallizing step of crystallizing the Sb2Te3 layer (5) by heating and holding the stacked structural body (7) at a first crystallization temperature of 100° C. or more and less than 170° C.; and a GeTe layer-crystallizing step of crystallizing the GeTe layer (6) by heating and holding the stacked structural body (7) in which the Sb2Te3 layer (5) is crystallized at a second crystallization temperature of 170° C. or more and 400° C. or less.
Provided is a hard mask manufacturing method capable of adjusting the film stress in accordance with the film thickness while using a fine crystalline tungsten film. The method comprises: a first step for forming a tungsten nitride film Ly1 on the surface of a processing target substrate Sw through a reactive sputtering method by using a target made of tungsten and introducing a noble gas and nitrogen gas into a processing chamber having a vacuum atmosphere; and a second step for forming a tungsten film Ly2 on the surface of the tungsten nitride film through a sputtering method in the processing chamber having a vacuum atmosphere by using a target made of tungsten. In the first step, the flow rate ratio of the noble gas with respect to the nitrogen gas is set to 1.5 or less and the pressure in the processing chamber is set to 1 Pa or more. In the second step, the stress is adjusted in accordance with the film thickness of the tungsten film by controlling at least one of the total pressure in the processing chamber and the bias electric power inputted to the processing target substrate during film formation.
To provide a target assembly in which formation of an intermetallic compound layer between an insert material of an aluminum or aluminum alloy plate and a backing plate made of a copper alloy or between a tungsten target and an insert material is suppressed, and a reduction of joining strength is prevented, and to provide a method for manufacturing the target assembly. In a target assembly in which a target comprising tungsten or molybdenum and a backing plate made of copper or a copper alloy are diffusion-bonded with an insert material of an aluminum or aluminum alloy plate interposed therebetween, the target assembly being diffusion bonded with a metal thin film layer interposed between the target and the insert material and between the backing plate and the insert material, the metal thin film layer comprising an alloy that contains at least one element from among Ti, V, Cr, Nb, Pd, Ir, Pt and these metals and having a thickness of greater than 0.1 μm and less than or equal to 3.0 μm.
The present invention provides a molybdenum target and a method for producing the same, wherein the occurrence of particle-causing pores is suppressed, and the size and distribution of the pores are highly accurately controlled. Provided is a molybdenum target formed from a sintered body of molybdenum powder, the molybdenum target having a relative density of 99% or more, an oxygen content of 25 ppm or less, a carbon content of 30 ppm or less, a tungsten content of 10-100 ppm, and a molybdenum content excluding the oxygen content, the carbon content, and the tungsten content of 99.999 mass% or more. In an observation region measuring 0.15 mm2, the number of pores having a size of 0.01 μm2or more and less than 0.2 μm2is 20 or less, the number of pores having a size of 0.2 μm2or more and less than 1.8 μm2is 5 or less, and the number of pores having a size of 1.8 μm2 or more is 1 or less.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 3/14 - Both compacting and sintering simultaneously
Provided is a method for depositing a silicon film, the method capable of adjusting film stress while maintaining optical characteristics. A silicon target 3 and a film deposition object Sw are disposed inside a vacuum chamber 1. A sputtering gas is introduced to a vacuum chamber having a vacuum atmosphere, electricity is supplied to the target, and a silicon film Sf is deposited on the surface of the film deposition object by sputtering. During this time, a silicon film is deposited in two separate steps: a first step for forming a first silicon film Sf1 having a columnar structure; and a second step for forming a second silicon film Sf2 having a columnar structure and a film density greater than that of the first silicon film.
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
42.
METHOD FOR CONTROLLING RESISTIVITY AND CRYSTALLINITY OF LOW-RESISTANCE MATERIAL THROUGH PVD
The present invention relates to a low-resistance material film formation method for forming a film on a semiconductor substrate by using physical vapor deposition (PVD), comprising the steps of: a) forming a barrier layer on a SiO2 wafer by using low-temperature magnetron sputtering at a pressure of 1-40 Pa; b) modifying, after formation of the barrier layer, the surface of the barrier layer by applying RF bias in an Ar gas atmosphere without applying DC power; and c) layering a low-resistance material on the barrier layer by using magnetron sputtering, wherein the low-resistance material is at least one selected from the group consisting of tungsten (W), ruthenium (Ru), molybdenum (Mo), cobalt (Co) and rhodium (Rh).
Provided is an etching apparatus for etching a silicon oxide film using a processing gas containing hydrogen fluoride and ammonia, including: a chamber; a gas supply unit; a water vapor supply unit; and a control unit. The chamber is configured such that a substrate having the silicon oxide film on a surface thereof can be disposed therein. The gas supply unit is configured to be capable of supplying one of the processing gas and a precursor gas of the processing gas to the chamber. The water vapor supply unit is capable of supplying water vapor to the chamber. The control unit controls the gas supply unit and the water vapor supply unit to supply the water vapor and one of the processing gas and the precursor gas to the chamber during etching processing.
Provided is a vapor deposition source for a vacuum vapor deposition apparatus, the vapor deposition source being capable of vapor-depositing an aluminum film at a low cost and at a relatively high film deposition rate without compromising the function of suppressing, as much as possible, the occurrence of splash. The vapor deposition source comprises a vapor deposition boat 3 installed in a vacuum chamber 1 and a power source Ps for supplying electricity thereto. A vapor deposition material composed of aluminum can be continuously or intermittently supplied to the vapor deposition boat heated by Joule heat to melt and evaporate the vapor deposition material. The vapor deposition boat is composed of ceramics and contains an additive metal material composed of at least one metal element of titanium, tantalum, zirconium, hafnium, or niobium, such that when the vapor deposition material is melted in the crucible, the metal element is incorporated into the melt of the vapor deposition material.
A vacuum evaporation method includes a vaporization step in which use is made of an evaporation boat including: a boat main body having a containing part of an evaporation material as an evaporation source; and electrode mounting plate parts respectively extending outward at both ends of the boat main body. A wire-shaped evaporation material is fed from above a bottom plate of the boat main body defining the containing part of the evaporation material, in a manner to come into contact with the bottom plate. Electric current is applied across both the electrode mounting plate parts in order to heat the boat main body, thereby evaporating the evaporation material inside the containing part. The vacuum evaporation method further includes a displacement step of continuously or intermittently displacing, while the wire-shaped evaporation material is being fed, a front end part of the wire-shaped evaporation material relative to the boat main body.
l; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.
An evaporation source for use in a vacuum evaporation apparatus is provided with: an evaporation boat inclusive of a boat main body with a containing part for an evaporation material, and electrode mounting plate parts respectively extending outward from both ends of the boat main body; and material feeding means for feeding a wire-shaped evaporation material into the containing part from an upper side thereof. By charging electric current across both electrode mounting plate parts, the boat main body is heated to evaporate the evaporation material inside the containing part. A supporting means is disposed in contact, from underneath, with such a bottom plate part of the boat main body as defines the containing part. The supporting means has supporting plates disposed in a state in which upper ends of the supporting plates are in contact, from underneath, with the bottom plate part of the boat main body.
Provided is an evaporation source for use in a vacuum evaporation apparatus, the evaporation source restricting a local overheating and planning prolonged lifetime. The evaporation source includes: a boat main body having a containing part for the evaporation material; rising plate parts each rising upward from both ends as seen in one direction of the boat main body; and electrode mounting plate parts each extending outward from the respective upper ends of the rising plate parts. The boat main body is heated by applying electric power across both the electrode mounting plate parts, thereby causing the evaporation material inside the containing part to be evaporated. At this time, the rising plate parts are provided with dividing passages for the applied electric current.
A connection part of this substrate-processing device has an opening that connects a second space to a first space. In the substrate-processing device, a space that includes the first space and the second space connected to each other through the opening is a processing space. A static electricity elimination part is configured to generate plasma from a plasma generation gas supplied into a second vacuum tank, and eliminate static electricity from a support part positioned in the first space, by setting the average free path in the processing space for charged particles in the plasma to be shorter than the smallest dimension of the opening in a plane orthogonal to a plane along a direction from the second space toward the first space.
A freeze-drying apparatus includes a freeze-drying chamber in which an object to be dried using water as a solvent is disposed, a collection chamber provided with a cold trap which connects with the freeze-drying chamber to condense and collect water vapor generated from the object to be dried, measuring devices which measure a state quantity of at least one of the object to be dried, an inside of the freeze-drying chamber, and an inside of the collection chamber, and a determining unit which determines a water vapor mass flow rate based on the state quantity measured by each measuring device, in which the determining unit has measurement models performed to observe the water vapor mass flow rate, and while each measuring device measures the state quantity, a set based on which the water vapor mass flow rate is determined with superiority at the time of the determination is selected.
F26B 5/06 - Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum the process involving freezing
F26B 5/04 - Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
An etching device includes a discharge tube irradiated with microwaves and a gas supplying unit configured to supply a gas mixture to the discharge tube. The etching device is configured to generate plasma of the gas mixture in the discharge tube and etch a silicon-containing film on a substrate by delivering the plasma and a fluorine-containing gas to the silicon-containing film. The gas mixture contains hydrogen atoms, nitrogen atoms, and oxygen atoms. The discharge tube is formed from a main component of aluminum oxide.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
52.
Display device, display method, and storage medium
A display device of the present invention includes a display controller executing display control processing of controlling an operation of a predetermined display destination to cause the display destination to display a plurality of N-dimensional graphs. The plurality of N-dimensional graphs include a first graph and a second graph. When a predetermined condition related to acquisition of fixed value change information including auxiliary explanatory variable information designating one or more of auxiliary explanatory variables as objects to be changed in value, and information indicating current variable values is satisfied, the display control processing includes processing of updating the first graph and the second graph to be displayed on the display destination to a changed graph due to changing of values of the auxiliary explanatory variables indicated by the auxiliary explanatory variable information to the current variable values indicated by the fixed value change information.
37 - Construction and mining; installation and repair services
Goods & Services
Installation, repair and maintenance of semiconductor manufacturing machines and systems; Installation, repair and maintenance of display manufacturing machines and systems; Installation, repair and maintenance of solar cell manufacturing machines and systems; Installation, repair and maintenance of secondary cell battery manufacturing machines and systems; Providing information and advice relating to installation, repair and maintenance of semiconductor manufacturing machines and systems; Providing information and advice relating to installation, repair and maintenance of display manufacturing machines and systems; Providing information and advice relating to installation, repair and maintenance of solar cell manufacturing machines and systems; Providing information and advice relating to installation, repair and maintenance of secondary cell battery manufacturing machines and systems; Installation, repair and maintenance of freeze drying equipment, namely, lyophilizers for food processing; Installation, repair and maintenance of freeze drying equipment, namely, lyophilizers for manufacturing pharmaceuticals; Installation, repair and maintenance of freeze drying equipment, namely, lyophilizers for manufacturing cosmetics; Installation, repair and maintenance of freeze drying equipment, namely, lyophilizers for manufacturing industrial chemicals; Installation, repair and maintenance of freeze drying equipment, namely, lyophilizers for manufacturing metal powders for electronic materials; Providing information and advice relating to installation, repair and maintenance of freeze drying equipment, namely, lyophilizers for food processing; Providing information and advice relating to installation, repair and maintenance of freeze drying equipment, namely, lyophilizers for manufacturing pharmaceuticals; Providing information and advice relating to installation, repair and maintenance of freeze drying equipment, namely, lyophilizers for manufacturing cosmetics; Providing information and advice relating to installation, repair and maintenance of freeze drying equipment, namely, lyophilizers for manufacturing industrial chemicals; Providing information and advice relating to installation, repair and maintenance of freeze drying equipment, namely, lyophilizers for manufacturing metal powders for electronic materials; Installation, repair and maintenance of heating furnaces for manufacturing semiconductors; Installation, repair and maintenance of heating furnaces for manufacturing displays; Installation, repair and maintenance of heating furnaces for manufacturing solar cells; Installation, repair and maintenance of heating furnaces for manufacturing secondary cell batteries; Providing information and advice relating to installation, repair and maintenance of heating furnaces for manufacturing semiconductors; Providing information and advice relating to installation, repair and maintenance of heating furnaces for manufacturing displays; Providing information and advice relating to installation, repair and maintenance of heating furnaces for manufacturing solar cells; Providing information and advice relating to installation, repair and maintenance of heating furnaces for manufacturing secondary cell batteries; Installation, repair and maintenance of vacuum pumps; Providing information and advice relating to installation, repair and maintenance of vacuum pumps; Installation, repair and maintenance of analyzing devices, namely, optical emission spectrometers, mass spectrometers, and ellipsometers; Providing information and advice relating to installation, repair and maintenance of analyzing devices, namely, optical emission spectrometers, mass spectrometers, and ellipsometers
effeffeff is the effective refractive index of the photonic crystal period structure); the order m meets the condition 3 ≤ m ≤ 7; and, if the radius of each of the pillars is R, the condition 0.25 ≤ R / a ≤ 0.35 is met.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
A vacuum processing apparatus of this invention having a stage on which is disposed the to-be-processed substrate further has a lifting/rotation mechanism capable of lifting the to-be-processed substrate lying on the stage off from an upper surface of the stage to a predetermined height position so that, at this lifted position, the to-be-processed substrate is capable of rotation about a substrate center by a predetermined rotational angle. The lifting/rotation mechanism has: a driving rod built into the stage so as to be moveable up and down and also be rotatable; and a substrate supporting body having a base end plate part capable of contacting a central region, including the substrate center, of the to-be-processed substrate. The substrate supporting body further has at least two arm plate parts elongated from the base end plate part outward thereof.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
56.
SPUTTERING TARGET FOR OXIDE SEMICONDUCTOR THIN FILM FORMATION, METHOD FOR PRODUCING SPUTTERING TARGET FOR OXIDE SEMICONDUCTOR THIN FILM FORMATION, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
C04B 35/453 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
SPUTTERING TARGET FOR FORMATION OF OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING SPUTTERING TARGET FOR FORMATION OF OXIDE SEMICONDUCTOR THIN FILM, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
XYVwZZ, X is within the range of 0.4 to 0.8, Y is within the range of 0 to 0.1 and Z is within the range of 0.2 to 0.6, while satisfying X + Y + Z = 1, V/(V + W + X + Y + Z) is 0.01 to 0.22 and W/(V + W + X + Y + Z) is 0.01 to 0.06.
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
C04B 35/453 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
The specific embodiments of the present invention provide: dried plasma that is characterized by having excellent particle uniformity, retaining the activity of the various blood clotting factors, and having a D50 of 200–400 μm on a volume-based particle size distribution obtained by laser diffraction/scattering particle size distribution measurement; and a production method, etc. for the dried plasma.
B01J 2/04 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic by dividing the liquid material into drops, e.g. by spraying, and solidifying the drops in a gaseous medium
F26B 5/06 - Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum the process involving freezing
F26B 17/10 - Machines or apparatus for drying materials in loose, plastic, or fluidised form, e.g. granules, staple fibres, with progressive movement with movement performed by fluid currents, e.g. issuing from a nozzle
59.
VACUUM TREATMENT APPARATUS AND VACUUM TREATMENT METHOD
In a present vacuum treatment apparatus, a controller controls an auxiliary roller, a thermometer, a power source, and a temperature control mechanism, in which the controller detects a temperature of a base material wound and conveyed by a main roller, starts film deposition to form a film deposition material on the base material when the temperature of the base material is in a film deposition temperature range, adjusts, when the temperature of the base material is out of a threshold range after starting film deposition on the base material, the temperature of the main roller so that the temperature of the base material falls within the threshold range and adjusts an adhesion force between the main roller and the base material, and continues the film deposition of the film deposition material on the base material with the temperature of the base material in the film deposition temperature range.
B65H 18/20 - Mechanisms in which power is applied to web roll, e.g. to effect continuous advancement of web the web roll being supported on two parallel rollers at least one of which is driven
B65H 23/038 - Controlling transverse register of web by rollers
60.
SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING SYSTEM, AND METHOD FOR PROCESSING SUBSTRATE
A substrate processing device reduces a surface of a substrate. The surface includes a metal layer. The substrate processing device includes a chamber body, a hot plate, a plasma supply unit, and a controller. The hot plate is accommodated in the chamber body and configured to set the substrate. The plasma supply unit is configured to supply plasma of a hydrogen gas to the chamber body. The controller is configured to execute a degassing process and a reducing process. In the degassing process, the controller drives the hot plate to remove an adsorbate from the surface before driving the plasma supply unit. In the reducing process, the controller drives the plasma supply unit after driving the hot plate to supply the plasma to the surface that has undergone the degassing process.
An information processing device of the present invention includes a first acquisition unit, a second acquisition unit, and a machine learning processing unit. The first acquisition unit acquires total event status information. The second acquisition unit acquires time-series detection result information. The machine learning processing unit performs one or both of learning processing and determination processing. In the learning processing, a learning model is generated by performing machine learning with the time-series detection result information acquired by the second acquisition unit as an input for each piece of the total event status information acquired by the first acquisition unit. In the determination processing, a determination is performed on the generated learning model by inputting the time-series detection result information acquired by the second acquisition unit for each piece of the total event status information acquired by the first acquisition unit.
A vacuum treatment apparatus including: a first wind-off roller paying out a first base material; a first wind roller winding the first base material; a main roller having an outer circumferential surface in contact with a non-film deposition surface, and winding and conveying the first base material, at least a part of the outer circumferential surface, which is uncovered with the first base material, being coated with an insulating material; a deposition source facing the outer circumferential surface of the main roller; a second wind-off roller paying out a second base material that is wound and conveyed by the main roller and covers a part of a film deposition surface of the first base material on the outer circumferential surface of the main roller; a second wind roller winding the second base material; and a power source applying a bias potential to the main roller.
B05D 1/28 - Processes for applying liquids or other fluent materials performed by transfer from the surfaces of elements carrying the liquid or other fluent material, e.g. brushes, pads, rollers
63.
Method of depositing silicon nitride film, apparatus for depositing film, and silicon nitride film
In a method in which inside a vacuum chamber, a silicon target and a to-be-deposited object are disposed in a positional relationship to face each other; a sputtering gas, containing therein nitrogen gas, is introduced into the vacuum chamber which is in a vacuum atmosphere; a negative potential is applied to the silicon target such that a silicon nitride film having a tensile stress is deposited in a reactive sputtering on a surface of the to-be-deposited object that is placed in an electrically floated state. The method includes steps: in which the to-be-deposited object is made to a state in which a bias potential is free from being applied thereto; and at least one of a flow ratio of the nitrogen gas to the sputtering gas, and the potential to be applied to the silicon target is controlled such that the surface of the silicon target can be maintained in a transition mode.
[Object] To improve step coverage of a coating film
[Solving Means] A deposition apparatus that includes a first electrode, a second electrode, a first power supply source, a second power supply source, and a phase adjuster is used. The first power supply source includes a first high-frequency power source and a first matching circuit, the first high-frequency power source outputting first high-frequency power, the first matching circuit being connected between the first high-frequency power source and the first electrode. The second power supply source includes a second matching circuit that outputs second high-frequency power, the second high-frequency power having the same period as the first high-frequency power and being lower than the first high-frequency power. A second high-frequency power source is caused to output the second high-frequency power and the phase adjuster is caused to operate to provide a phase difference θ between a phase of the first high-frequency power and a phase of the second high-frequency power. A voltage value Vpp of the second high-frequency power and a capacitance value C1 of a first variable capacitor that correspond to the phase difference θ in a state where output impedance of the second high-frequency power source and load-side impedance connected to the second high-frequency power source match are detected. The voltage value Vpp and the capacitance value C1 are selected in combination in a predetermined range of the phase difference θ.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
ULVAC, INC. (Japan)
Inventor
Miyata, Noriyuki
Asanuma, Shutaro
Sumita, Kyoko
Miyaguchi, Yuusuke
Saito, Kazuya
Jinbo, Takehito
Horita, Kazumasa
Masuda, Takeshi
Abstract
[PROBLEM] An object of the present invention is to provide a nonvolatile memory device having an excellent information retention characteristic, exhibiting high performance, and achieving practical mass-production, and a manufacturing method therefor.
[PROBLEM] An object of the present invention is to provide a nonvolatile memory device having an excellent information retention characteristic, exhibiting high performance, and achieving practical mass-production, and a manufacturing method therefor.
[SOLUTION] A nonvolatile memory device 1 has a laminated structure part including a plurality of Al2O3 layers 4 and a plurality of SiO2 layers 6 formed as two types of insulating layers formed with different compositions and disposed alternately, and an O-M1-O layer 5 of a 0.5 molecular layer to a 2.0 molecular layer, formed by a chemical bond between a metal element M1 and oxygen, and disposed on each joining interface between the insulating layers, the metal element M1 being an element other than elements constituting the insulating layers, and the nonvolatile memory device stores information by modulating an interface dipole induced in the vicinity of the O-M1-O layer 5 by external electrical stimulation.
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/23 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
H10B 41/23 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
The present invention provides a tungsten target and a method for manufacturing the same that suppresses the occurrence of particle-causing pores, controlling the size and distribution thereof to high precision. The tungsten target is formed from sintered tungsten powders, wherein, in a 0.15 mm2observation area having a relative density of 99% or more, there are no more than 20 pores that are 0.01 μm2or more and less than 0.2 μm2in size, no more than five pores that are 0.2 μm2or more and less than 1.8 μm2in size, and no more than one pore that is 1.8 μm2 or more in size.
A plasma processing apparatus according to the invention includes a chamber, an inner electrode, an outer electrode, a plasma generating power source, and a gas introduction part. The plasma generating power source applies alternating-current power to the outer electrode. The outer electrode includes a first electrode, a second electrode, and a third electrode. The plasma generating power source includes a first high-frequency power source, a second high-frequency power source, and a power splitter. The first high-frequency power source applies alternating-current power having a first frequency λ1 to the first electrode and the second electrode. The second high-frequency power source applies alternating-current power having a second frequency λ2 to the third electrode. A relationship of λ1>λ2 is satisfied. The power splitter is configured to split the alternating-current power into the first electrode and the second electrode with a predetermined split ratio.
The present invention relates to a method for forming a tungsten (W) film in a semiconductor device, by using a physical vapor deposition (PVD) sputtering method on a semiconductor substrate, the tungsten film forming method comprising: a) a first deposition step of depositing a tungsten film on the semiconductor substrate by using magnetron sputtering with a power density of less than 0.5 W/㎠ ; b) a step of modifying the surface of the deposited tungsten by performing RF bias processing under an inert gas atmosphere; and c) a second deposition step of additionally depositing a tungsten film on the deposited tungsten film by using magnetron sputtering of a power density of 0.5 W/㎠ or more.
There is provided an evaporation source adapted for use in a vapor deposition apparatus in which by heating, in an induction heating method, a crucible filled with a vapor deposition material, the entire crucible including a cap body attains a top-heat state. An evaporation source is provided with: a crucible filled with the vapor deposition material; a cap body to close an upper surface opening of the crucible; and an induction heating coil disposed around the crucible and the cap body. Further, the cap body is provided with a discharge part which allows the passage of the vapor deposition material evaporated or sublimated by heating. The cap body is provided on an external surface thereof with projections each having a corner part.
According to the present invention, particles are inhibited from infiltrating a vacuum processing device. To achieve the abovementioned purpose, a vacuum processing device according to one mode of the present invention comprises a vacuum vessel, a charged particle generation source, an exhaust mechanism, and a particle removal mechanism. Charged particles are generated inside the charged particle generation source. The exhaust mechanism exhausts gas that is inside the vacuum vessel. The particle removal mechanism includes an intermediate tank that is disposed between the vacuum vessel and the charged particle generation source and that connects the vacuum vessel and the charged particle generation source, and the particles generated by the charged particle generation source are discharged using a gas stream to outside the intermediate tank in front of the vacuum vessel.
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
71.
PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
A method for processing a subject with plasma includes repeatedly outputting first pulses from a pulse generator to a first high-frequency power supply, intermittently outputting first high-frequency power from the first high-frequency power supply to a first electrode based on the first pulses to generate the plasma, detecting start of plasma generation caused by a present first pulse with a detector, calculating a delay period, being from rise of the present first pulse until the detector detects start of plasma generation, repeatedly outputting second pulses from the pulse generator to a second high-frequency power supply based on time at which the delay period has elapsed from rise of a first pulse output after the delay period is calculated, and outputting second high-frequency power from the second high-frequency power supply to a second electrode based on the second pulses to draw ions from the plasma to the subject.
A vapor deposition source for a vacuum vapor deposition apparatus according to the present invention disposed in a vacuum chamber to evaporate a solid vapor deposition material to be vapor-deposited on an object to be subjected to vapor deposition includes: a crucible configured to accommodate the vapor deposition material therein and having a discharge port through which the evaporated vapor deposition material is discharged toward the object to be subjected to vapor deposition; and a heating means configured to heat the vapor deposition material in the crucible. In the crucible, an evaporation facilitator is provided, a partial portion of the evaporation facilitator being immersed in the vapor deposition material liquefied by heating, with a gap between the remaining portion of the evaporation facilitator and an inner surface of the crucible.
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
A display device of the present invention is provided with a display control unit which executes a display control process for controlling the operation of a prescribed display destination and for displaying multiple N-dimensional graphs on the display destination. In the N-dimensional graphs, predetermined multiple types of explanatory variables are each defined as a display candidate explanatory variable, and predetermined multiple types of objective variables are each defined as a display candidate objective variable, and each of the graphs shows a relationship between a Q-1 type (Q is an integer of 2 or more) explanatory variable among the display candidate explanatory variables and one type objective variable among the display candidate objective variables. The multiple N-dimensional graphs include a first graph and a second graph that have a common explanatory variable and different objective variables. The display control process includes a process which involves, when a prescribed condition is satisfied regarding acquisition of fixed-value change information including auxiliary explanatory variable information for designating one or more of auxiliary explanatory variables as values to be changed and information indicating current variable values, updating the first graph and the second graph to be displayed on the display destination to changed graphs in which the values of the auxiliary explanatory variables indicated by the auxiliary explanatory variable information have been changed to the current variable values indicated by the fixed-value change information.
Surface imaging apparatuses, surface analysis apparatuses, methods based on detection of secondary electrons or secondary ions that include a spatially scanned and DC or pulsed primary excitation source resulting in secondary electrons or secondary ions which are detected and provide the modulated signal for imaging of the sample; and dual polarity flood beams to effect neutralization of surface charge and surface potential variation.
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
76.
Multifunctional engineered particle for a secondary battery and method of manufacturing the same
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/58 - Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFySelection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
H01M 4/583 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx
H01M 4/587 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx for inserting or intercalating light metals
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
A cathode unit includes first and second magnet units that are driven to rotate around an axis on a side opposed to a sputtering surface of a target. The first magnet unit is configured to cause a first leakage magnetic field to act on a space in front of the sputtering surface including a target center inward. The second magnet unit is configured to cause a second leakage magnetic field to act locally in the space in front of the sputtered surface located between the target center and the outer edge of the target and to enable self-holding discharge under low pressure of plasma confined by the second leakage magnetic field.
Provided is a silicon nitride film forming method with which a silicon nitride film having a relatively strong tensile stress can be formed by reactive sputtering. In this silicone nitride film forming method, a silicon target 3 and a film-forming object Sw are disposed opposing each other within a vacuum chamber 1, a sputtering gas containing a nitrogen gas is introduced into the vacuum chamber under a vacuum atmosphere, and a negative potential is applied to the silicon target to form a silicon nitride film having a tensile stress by reactive sputtering on the surface of the film-forming object which is disposed in an electrically floating state, wherein the method includes a step in which the film-forming object is placed in a state in which a bias potential is not being applied, and β-type silicon nitride is deposited on the surface of the film-forming object by controlling the flow amount ratio of the nitrogen gas relative to the sputtering gas and/or the potential to be applied to the silicon target so that the surface of the silicon target is maintained in a transition mode between a metal mode and a compound mode.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/318 - Inorganic layers composed of nitrides
Provided is a vacuum processing device that holds a stage configured so as to be able to offset the phase of a substrate to be treated without causing positional deviation of the substrate. A vacuum processing device SM, according to the present invention, which comprises a stage 4 on which a substrate Sw to be processed is installed, is characterized by further comprising a lifting/lowering rotation mechanism Rm that lifts the substrate to be processed on the stage to a prescribed height position from the stage top surface and can rotate the substrate to be processed at this lifted position every prescribed rotation angle about the substrate center, the lifting/lowering rotation mechanism including: a drive rod 5 that is incorporated into the stage and can freely move up/down and freely rotate; and a substrate support body 6 including a proximal end plate part 61 that can contact a center region of the substrate to be processed including the substrate center, and at least two arm plate parts 62 that extend outward from the proximal end plate part and can contact a portion of the substrate to be processed along the radial direction, the substrate support body normally being immersed within the stage, and the proximal end plate part and the arm plate parts being lifted up by upward movement of the drive rod to support the substrate to be processed.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
80.
VACUUM FREEZE-DRYING METHOD, INJECTION NOZZLE FOR A VACUUM FREEZE-DRYING APPARATUS, AND VACUUM FREEZE-DRYING APPARATUS
[Object] To freeze droplets of a raw material liquid in a shorter drop distance while maintaining a cooling velocity, which is a super high speed, without deteriorating a solute or dispersoid.
[Object] To freeze droplets of a raw material liquid in a shorter drop distance while maintaining a cooling velocity, which is a super high speed, without deteriorating a solute or dispersoid.
[Solving Means] A vacuum freeze-drying method according to an embodiment of the present invention is a vacuum freeze-drying method that includes steps of injecting a raw material liquid from an injection nozzle inside a vacuum chamber, generating frozen particles by self-freezing of the raw material liquid, and drying the generated frozen particles to thereby produce a dry powder, including: injecting the raw material liquid from the injection nozzle in a state in which the vacuum chamber is maintained at water vapor partial pressure corresponding to a self-freezing temperature of the raw material liquid, such that an injection initial velocity of the raw material liquid from the injection nozzle is 6 m/s or more and 33 m/s or less; and adjusting, when the maximum diameter of the generated frozen particle exceeds a predetermined value or droplets of the raw material liquid are unfrozen, an injection flow rate of the raw material liquid from the injection nozzle or properties of the injection nozzle such that frozen particles having a maximum diameter equal to or smaller than the predetermined value are generated.
F26B 5/06 - Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum the process involving freezing
This sputtering device is provided with a cathode unit for emitting sputter particles toward a surface to be treated of a substrate on which a film is to be formed. The cathode unit has a target, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The auxiliary magnet causes magnetic field lines formed by a magnet positioned at a first oscillation end to tilt toward a second oscillation end along the magnet positioned at the first oscillation end.
[Problem] To provide a vacuum pump and a control method therefor with which it is possible to improve vacuum evacuation performance while protecting a motor from overheating. [Solution] A vacuum pump according to one embodiment of the present invention comprises a positive-displacement pump body, a motor, and a control unit. The pump body has a pump rotor. The motor rotates the pump rotor. When a load torque is equal to or lower than a first predetermined torque, the control unit executes a first control mode in which the motor is driven at a predetermined rotation speed or lower. When the load torque exceeds the first predetermined torque, the control unit executes a second control mode in which the motor is driven at the predetermined rotation speed or lower using a second predetermined torque or lower, the second predetermined torque being higher than the first predetermined torque, with a first predetermined power set as the upper limit of motor output.
A cathode unit for a magnetron sputtering apparatus includes a backing plate joined to an upper side opposed to a sputtering surface of a target set in a posture facing an inside of a vacuum chamber and a magnet unit disposed above the backing plate at an interval, a refrigerant passage through which a refrigerant can flow being formed in the backing plate, in which a surface pressure applying unit is provided, the surface pressure applying unit applying, toward an upper outer surface of the backing plate from above the backing plate, a surface pressure equivalent to pressure applied to an upper inner surface of the backing plate when the refrigerant is circulated.
Provided is a film forming method by which a metal film having a high melting point can be formed in a state where a stress difference is as small as possible and which is suitable in the case of using a cylindrical target. A film forming method according to the present invention, which forms a metal film having a high melting point on an opposite surface to each target 5 of a substrate Sw disposed in a vacuum treatment room 1a, comprises: a first step for taking, as a first target group 50a, starting point targets 5a, 5b at which both outer edge parts of the substrate face each other and targets 5c, 5d that are positioned outward in a target aligned direction from the starting point targets, for taking, as a second target group 50b, targets 5e–5h that are positioned inward in the target aligned direction from the starting point targets, and for supplying power to each of the targets of the second target group by means of a sputter power supply 7 and forming a film when the metal film having a high melting point starts to be formed on the substrate; and a second step for supplying power to each of the targets of the first target group by means of the sputter power supply and forming a film simultaneously with or prior to the stopping of supplying power to each target of the second target group.
H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/365 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 45/00 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
A freeze-drying device includes a controller configured to control depressurization of containers filled with a liquid including a raw material and a medium to freeze the liquid from a liquid surface. The freeze-drying device also includes a gas capture pump configured to exhaust a freeze-drying chamber accommodating the containers, and a positive-displacement pump configured to discharge gas from a space accommodating the gas capture pump. The controller executes an exhaust mitigation process that performs the depressurization at an exhaust capability that is less than a rated exhaust capability of the freeze-drying device. The controller uses a partial pressure value of the medium to determine when the exhaust mitigation process ends. The controller maintains an exhaust speed of the gas capture pump and decreases an exhaust speed of the positive-displacement pump in the exhaust mitigation process.
F26B 5/06 - Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum the process involving freezing
Provided is a freeze-drying device that can evenly measure water quality flow rate serving as a management indicator for the drying state of an object to be dried. This freeze-drying device (FM) comprises: a freeze-drying chamber (1a) in which is disposed an object (Ds) to be dried having water as a solvent; and a collection chamber (2a) that communicates with the freeze-drying chamber and in which a cold trap (4) is provided for condensing and collecting water vapor generated from the object to be dried. The freeze-drying device further comprises a plurality of measurement means (Pg11 to Pg23) allowing measurement of state quantities of at least one among the object to be dried, the inside of the freeze-drying chamber, and the inside of the collection chamber, associated with sublimation of water from the object to be dried, and a measurement means (5) for measuring the water quality flow rate on the basis of the state quantities measured by the respective measurement means. The measurement means has a plurality of measurement models corresponding to the measurement of the water quality flow rate and, while the state quantities are being measured by the respective measurement means, the measurement model that is dominant at the time of measurement and with which it is possible to measure the water quality flow rate is selected from a set in which measurement values measured by the respective measurement means and the respective measurement models corresponding thereto are combined. The water quality flow rate is obtained from the selected measurement values and the measurement model corresponding thereto.
F26B 5/06 - Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum the process involving freezing
[Problem] To improve step coverage of a coating film. [Solution] To use a film formation device equipped with a first electrode, a second electrode, a first power supply source, a second power supply source, and a phase adjuster. The first power supply source includes a first high-frequency power source that outputs first high-frequency power, and a first matching circuit that is connected between the first high-frequency power source and the first electrode. The second power supply source includes a second matching circuit that outputs a second high-frequency power lower than a first high-frequency power with the same period as the first high-frequency power. The second high-frequency power is caused to be output from the second high-frequency power source, and the phase adjuster is operated to provide a phase difference θ to a phase of the first high-frequency power and a phase of the second high-frequency power. A voltage value Vpp of the second high-frequency power and a capacitance value C1 of a first variable capacitor are detected that correspond to the phase difference θ in a state where the output impedance of the second high-frequency power source and the load-side impedance connected to the second high-frequency power source are matched to each other. The voltage value Vpp and the capacitance value C1 are selected in combination in a prescribed range of the phase difference θ.
Provided is a substrate holding device capable of smoothly discharging assist gas without deteriorating a function of improving sealing between an annular wall and a process-target substrate. This substrate holding device SH comprises: a susceptor 6 in which a first annular wall 61 in contact with the outer circumferential part of a process-target substrate Sw and a second annular wall 62 disposed inward of the first annular wall are protruded; a surface pressure applying means 51 for applying surface pressure, toward the first and second annular walls, to the process-target substrate in contact with the first and second annular walls; and gas introduction means 71, 72, 71a, 72a for introducing a predetermined gas to an outward space 63 that is in the susceptor and that is partitioned by the process-target substrate and the first and second annular walls, and to an inward space 64 that is in the susceptor and that is partitioned by the process-target substrate and the second annular wall, to cause the respective outward and inward spaces to be in a gas atmosphere. At the second annular wall, a connecting path 62a is formed so as to connect the outward space and the inward space with each other, and has a conductance value at which the gas atmosphere can be separated between the outward space and the inward space.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a vacuum processing device capable of removing introduced particles to the greatest extent possible while maintaining a vacuum atmosphere. The device has a vacuum chamber 1, 2 in which a processing unit 4 is installed. A vacuum pump 15 is connected to the vacuum chamber, and a stage 3 is provided within the vacuum chamber. An oscillation means to oscillate the stage between a first orientation and a second orientation is provided, the first orientation being the orientation of the stage when a substrate Sw faces the processing unit and is processed, and the second orientation being the orientation of the stage other than during processing. A spraying means 5 for spraying an inert gas toward the stage is provided in the vacuum chamber. The spraying means is configured to allow the flow rate to be switched between a first flow rate that enables particles adhering to at least one of the stage and the substrate to be blown away while the interior of the vacuum chamber is a vacuum atmosphere of prescribed pressure and a second flow rate that enables particles diffused within the vacuum chamber by being blown away to be transferred to the vacuum pump.
C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
91.
METHOD FOR CONTROLLING RESISTIVITY AND CRYSTALLINITY OF LOW-RESISTANCE MATERIAL THROUGH PVD
22 wafer by using low-temperature magnetron sputtering at a pressure of 1-40 Pa; b) modifying, after formation of the barrier layer, the surface of the barrier layer by applying RF bias in an Ar gas atmosphere without applying DC power; and c) layering a low-resistance material on the barrier layer by using magnetron sputtering, wherein the low-resistance material is at least one selected from the group consisting of tungsten (W), ruthenium (Ru), molybdenum (Mo), cobalt (Co) and rhodium (Rh).
A sputtering device according to an embodiment of the present invention is equipped with: one or more targets disposed to face a substrate and made from a film deposition material; one or more magnet units disposed on the rear side of the targets; a control device having an optimum solution calculation unit for calculating an optimum solution for a setting condition pertaining to at least one of the magnet units on the basis of input information which includes at least a setting condition, which includes at least one among the position of each magnet unit, a movement pattern of each magnet unit, and inflow currents to constituent electromagnets of each magnet unit or an inflow current fluctuation pattern, and a measurement value of the film quality of the film deposition material deposited on the substrate by the sputtering device; and an adjustment unit capable of individually adjusting the setting conditions of the magnet units on the basis of the optimum solution.
A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.
A high-frequency power circuit includes a first antenna circuit and a second antenna circuit that are connected in parallel to a matching box connected to a high-frequency power supply. The first antenna circuit include a first antenna, a first distribution capacitor, and a first variable capacitor. The second antenna circuit includes a second antenna, a second distribution capacitor, and a second variable capacitor. A controller sets a capacitance of the first variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the first antenna and the first variable capacitor during plasma production to reduce this phase difference and sets a capacitance of the second variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the second antenna and the second variable capacitor during plasma production to reduce this phase difference.
1122 that, on the side of a target 5 opposite to a sputtering surface 51, are respectively driven about an axis C1. The first magnet unit is configured such that a first stray magnetic field Mf1 is caused to act on a front space of the sputtering surface which includes a target center Tc therein. The second magnet unit causes a second stray magnetic field Mf2 to locally act on the front space of the sputtering surface located between the target center and an outer edge section of the target, and is configured so as to enable low-pressure self-maintained discharge of plasma contained in the second stray magnetic field.
An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.
The evaporation source for use in the vacuum evaporation apparatus in vacuum evaporation of a film formation object inside a vacuum chamber has: a main cylindrical body having a crucible part to be filled with an evaporation material Em; a secondary cylindrical body protruded from such a portion of the main cylindrical body as is positioned above the evaporation material; and a heater capable of heating the evaporation material that is filled in the crucible part. The secondary cylindrical body is detachably mountable on the main cylindrical body while shifting a phase of the discharge opening. A lid body is disposed in a manner to open or close an upper-surface opening of the crucible part. In a state in which the upper-surface opening of the crucible part is blocked by the lid body in a vacuum atmosphere, the evaporation material in the crucible part is heated by the heater.
[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.
2/Vs or more.
C04B 35/457 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
An ion gun of the invention includes: an anode; a magnetic pole that has an inner surface facing the anode, a slit provided at a position corresponding to the anode, and an inner inclined surface that extends from an end of the inner surface to the slit and that forms a part of the slit; and a cover that covers at least the inner surface and the inner inclined surface, is formed of an electroconductive and non-magnetic material, and is detachable from the magnetic pole.
A vacuum processing apparatus including: a plurality of transport chambers arranged in order along a first direction; a plurality of process chambers connected to the transport chambers along a second direction that is perpendicular to the first direction; and a position conversion chamber connected to a first transport chamber among the transport chambers. The transport chambers include a rotational movement stage that rotates about a rotation axis that is perpendicular to the first direction and the second direction, and moves along a plane formed by the first direction and the second direction.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
