This testing device comprises an electro-optical sensor, a test signal application unit, a light source, and a camera. The electro-optical sensor is disposed in the vicinity of a substrate to be tested and changes birefringence characteristics by receiving an electric field from the substrate. The test signal application unit applies a modulated test signal to the substrate. The light source irradiates the electro-optical sensor with illumination light. The camera receives the illumination light from the light source when the test signal is being applied to the substrate and images the return light of the illumination light emitted from the electro-optical sensor.
Disclosed is a laser annealing apparatus which comprises a crystallization laser beam irradiation unit that emits a continuously oscillated crystallization laser beam toward an amorphous silicon film, and which modifies the amorphous silicon film into a crystallized film. The laser annealing apparatus comprises a dehydrogenation laser beam irradiation unit that moves along a scanning direction relative to the amorphous silicon film together with the crystallization laser beam irradiation unit, and emits a plurality of continuously oscillated dehydrogenation laser beams toward the amorphous silicon film ahead of the crystallization laser beam. A plurality of dehydrogenation laser beam spots projected on the amorphous silicon film by the plurality of dehydrogenation laser beams and the crystallization laser beam spot are arranged so as to form a line along the scanning direction.
This probe device is brought into contact with an electrode, which has been formed on a surface of a substrate to be measured such as a package substrate, so as to measure/inspect the electrical characteristics of the package substrate. The probe device is characterized by comprising: a probe device substrate having a flat surface; a plurality of wiring patterns provided on the flat surface; and a probe formed so as to protrude from a prescribed position of the wiring patterns.
A focused ion beam system includes a beam emitter and an aperture. The beam emitter is equipped with a focused ion beam optical system which works to control an ion beam, as produced by an ion source, and emit the ion beam into an inner space. The aperture communicates with the inner space to permit the ion beam, as emitted from the beam emitter, to pass therethrough, thereby having a target substrate exposed to the ion beam. The inner space is evacuated in a vacuum. A movable sealing valve is provided which selectively opens or closes the aperture.
H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
A condenser lens works to process an ion beam into a collimated form. An electrical aperture unit is disposed between the condenser lens and the objective lens. The electrical aperture unit works to alter an area through which the ion beam, as processed by the condenser lens, passes, thereby controlling a diameter of the ion beam. A plurality of beam shielding plate units are provided each of which includes a pair of beam shielding plates which are diametrically opposed to each other across the ion beam which has passed through the condenser lens. The beam shielding plates are movable in a direction perpendicular to an optical axis of the ion beam. The beam shielding plate units are arranged around the ion beam to define a diameter of the ion beam passing therethrough.
A laser annealing device includes a light source that emits a laser beam, and a multimode optical fiber where the laser enters from one end portion, the laser beam propagates therethrough, and the laser beam is emitted from another end portion. The laser annealing device additionally includes a vibration source having a vibrating head portion. The optical fiber is disposed on a mounting surface of the vibrating head portion. A support portion is included that covers a region of the optical fiber disposed on the mounting surface, and supports and presses the optical fiber against the mounting surface. A vibration transmission rate between the optical fiber and the support portion that contacts the optical fiber is set to be smaller than a vibration transmission rate between the mounting surface and the optical fiber.
The purpose of the present invention is for objects and the like to be less susceptible to scratching when a plate-shaped object is placed. A placement device in which a plate-shaped object is placed horizontally in the placement plane of a holding member provided with holes, the placement device comprising a base that is provided so as to be capable of moving in the up/down direction on the vertically lower side of a holding part, a first moving part that moves the base in the up/down direction, and a plurality of columnar parts that are provided to the base. The columnar parts project vertically upward from the base, and a first placement part that places objects is provided to the distal ends of the columnar parts. When the base is positioned at the lower end, the first placement part is positioned lower than the holding part. When the base is moved upward from the lower end, the columnar parts are inserted into the holes. When the base is positioned at the upper end, the first placement part is positioned above the placement plane.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
The present invention can prevent the occurrence of dust. The present invention provides a transport device that transports a support member having a placement flat surface on which a plate-shaped object of interest is placed, from a first position outside a frame body to a second position inside the frame body via an opening of the frame body. The transport device is provided with: a first rail, a second rail, a third rail, and a fourth rail provided along the horizontal direction; a plurality of rollers provided on each of the first rail to the fourth rail; and at least one pinion provided on each of the first rail to the fourth rail. The first rail and the third rail are provided outside the frame body, the second rail and the fourth rail are provided inside the frame body, the first rail and the second rail are provided on a first linear line substantially parallel to a transport direction of the support member, and the third rail and the fourth rail are provided on a second linear line that is parallel to, and has the same height as, the first linear line. The rotation axis of each of the rollers is substantially orthogonal to the first linear line and the second linear line, and the support member is placed on a plurality of rollers. The support member has, on two side surfaces thereof substantially parallel to the transport direction, racks that are engaged with pinions.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B65G 49/06 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
A process apparatus includes a differential pumping device and a focused ion beam column. The differential pumping device includes a head which has a plurality of annular grooves formed in a surface thereof which faces a substrate to be processed. The annular grooves surround the center of the head. An orifice is formed inside an innermost one of the annular grooves and defines a processing space serving to achieve processing of a process surface of the substrate. A vacuum pump is connected to at least one of the annular grooves to suck gas from the one of the annular grooves with the surface of the head facing the processing surface of the substrate to create a high-level vacuum in the processing space. The focused ion beam column is equipped with a cylindrical chamber leading to the orifice in communication with the processing space. The chamber has disposed therein a focused ion beam optical system which works to emit a focused ion beam through the orifice. A precursor gas supply is connected to the innermost one of the annular grooves to eject a precursor gas toward the process surface so that the precursor gas flows into the processing space along the process surface.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
This examination circuit has: a counter that generates a delay at cyclic intervals in a master clock; a delay circuit that generates, in a signal from the counter, a delay at a temporal resolution finer than that of the cycle in the master clock; a signal generation circuit that generates a signal on the basis of a pattern signal and a signal from the delay circuit; a timing calibration circuit that derives an amount of fluctuation in a timing; and an adder that adds the amount of fluctuation to a timing setting value read out from a memory in which timing information is stored according to a timing control signal included in the pattern signal and outputs control signals for the counter and the delay circuit.
A projection exposure apparatus (10) includes a mask mark illumination light source (21) capable of irradiating a mask mark (MM) with exposure light itself or a first alignment light (L1) having substantially the same wavelength as the exposure light, and an alignment unit (30) having a work mark illumination light source (31) capable of irradiating a work mark (WM) with second alignment light (L2) having a wavelength different from the wavelength of the exposure light, an imaging device (32), and an imaging optical system (40). The imaging optical system (40) includes a first dichroic prism (41) for synthesizing the first alignment light (L1) and the light from the work mark (WM) and emitting the synthesized light toward the imaging device (32), and an optical path length changing optical system (42) for splitting and merging the first alignment light (L1), in which the optical positional relationships of the work mark (WM) and the image (MMI) of the mask mark (MM) with respect to the imaging device (32) are equivalent. Accordingly, it is possible to provide a projection exposure apparatus and a projection exposure method that allow high-precision alignment even in a small-sized exposure area.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
12.
MANUFACTURING METHOD FOR REFLECTIVE MASK BLANK, REFLECTIVE MASK BLANK, AND FOCUSED ION BEAM PROCESSING APPARATUS
Provided is a manufacturing method for a reflective mask blank having a substrate and a reflective film which is laminated on a surface of the substrate and reflects exposure light, a reference mark having recessed groove-shaped cross section being formed in the reflective film, the manufacturing method including: an contour processing step for processing the reflective film using a low-current focused ion beam along the contours of a planned formation area of the reference mark; and a whole-area processing step for processing the reflective film in the whole planned formation area using a high-current focused ion beam.
A focused energy beam apparatus includes a substrate support and a focused energy beam column equipped with a differential pumping device movable to a location facing an area of a process target surface of the substrate. The support supports a periphery of the substrate with a horizontal orientation. A positive pressure chamber is disposed below the substrate and exerts a positive pressure on the process target area to cancel deflection of the substrate arising from its own weight. A local depressurizing mechanism is arranged in the positive pressure chamber, out of contact with the substrate, and exerts a negative pressure on a lower surface of the substrate to cancel a suction force created by the differential pumping device. The local depressurizing mechanism is movable relative to the substrate following movement of the differential pumping device while facing the differential pumping device through the substrate.
A metal pattern inspection method which applies a pulsed voltage to a metallic pattern, sets a cycle of the pulsed voltage to be shorter than a scanning cycle in which a focused ion beam is swept, indicating only a region of a secondary charged particle image corresponding to a portion of the metallic pattern which is isolated by a wire breakage and to which the pulsed voltage is applied in the form of a first pattern created as a function of surface electrical potentials changing in level with time, detecting, as a disconnection, a boundary between the first pattern and a second pattern created as a function of surface electrical potentials not changing in level with time, and determining whether there is a breaking of or a short circuit in the metallic pattern based on the presence or absence of the disconnection.
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
A focused ion beam system has a differentially-pumped vacuum unit and a focused ion beam column, comprising: a vacuum pad, of a porous material, with a suction surface exposed in a way that surrounds the outer edge of a substrate to be processed; a substrate support on which the substrate and vacuum pad are placed, and a vacuum pump for vacuum evacuation using the vacuum pad. The system provides an arrangement in which, while a head of the differentially-pumped vacuum unit partially falls out of the outer edge of the substrate, the suction surface allows an input of air evacuated from a region between the suction surface and the head, and the processing area on a substrate is expanded by allowing the processing with an ion beam to be performed even in the vicinity of the peripheral substrate surface without requiring a large vacuum chamber.
The present invention provides a laser annealing apparatus that is provided with a plurality of beam emitting units, each of which emits a laser beam that is formed of a continuous wave laser light beam and has a rectangular beam spot on a surface to be irradiated; and this laser annealing apparatus relatively scans the laser beam in a scanning direction with respect to an amorphous silicon film that is formed on a substrate, thereby crystallizing a band-like region to be modified of the amorphous silicon film. With respect to this laser annealing apparatus, the long sides of the beam spot are parallel to a direction that is perpendicular to the scanning direction; and the length of the long sides of the beam spot is set to be shorter than the length of a breakage in the substrate, the breakage being caused by the intrinsic internal stress of the substrate generated in association with the heat that is produced by the irradiation of the laser beam.
A differential pumping apparatus for creating a high vacuum inside a processing space includes a displacement drive unit configured to move a substrate to be processed or a head, to adjust parallelism and distance between a surface to be processed and a surface of the head. Gap measurement devices are placed at three or more locations along the periphery of the surface of the head to provide distance information. A gap control unit is configured to control the displacement drive unit in response to the distance information between the surface to be processed and the surface adapted to face the surface to be processed, so that the surface to be processed and the surface adapted to face the surface to be processed are parallel.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
The present invention enables highly accurate analysis when visualizing analysis results in spectral imaging.
The present invention enables highly accurate analysis when visualizing analysis results in spectral imaging.
An surface analysis method includes: acquiring spectral image data regarding a sample surface with use of a spectral camera; extracting n wavelengths dispersed in a specific wavelength range in the acquired spectral image data, and converting spectrums of the wavelengths in the spectral image data into n-dimensional spatial vectors for each pixel; normalizing the spatial vectors of the pixels; clustering the normalized spatial vectors into a specific number of classifications; and identifying and displaying pixels clustered into the classifications, for each of the classifications.
G06V 10/762 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using clustering, e.g. of similar faces in social networks
G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects
G06V 10/32 - Normalisation of the pattern dimensions
19.
Polycrystalline film, method for forming polycrystalline film, laser crystallization device and semiconductor device
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION (Japan)
V TECHNOLOGY CO., LTD. (Japan)
Inventor
Gotoh, Jun
Saito, Kaori
Ikenoue, Hiroshi
Abstract
The present invention provides a microstructure in which evenly distributed crystal grains line up in parallel lines extending along the surface of the film, and a no-lateral-growth region left at each of locations exposed to both ends of a grain interface, which serves as a partition between the neighboring two crystal grains. According to the present invention, there are also provided: a method for forming a polycrystalline film, such as a thin polycrystalline silicon film, a thin aluminum film, and a thin copper film, which is flat and even, in surface, electrically uniform and stable, and mechanically stable; a laser crystallization device for use in manufacture of polycrystalline films, and a semiconductor device using the polycrystalline film and having good electrical property and increased breakdown voltage.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C22F 3/02 - Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons by solidifying a melt controlled by supersonic waves or electric or magnetic fields
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
This focused ion beam device is provided with a beam emission part provided with a focused ion beam optical system that adjusts and emits, to an internal space, an ion beam extracted from an ion source, and an opening that communicates with the internal space and enables beam irradiation to a substrate to be processed by passing the ion beam emitted from the beam emission part therethrough, wherein the internal space is evacuated. The focused ion beam device is provided with a movable sealing valve that enables opening and closing of the opening.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
21.
REPAIR TAPE, AND MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR SAID REPAIR TAPE
The present invention is repair tape used to repair LED chips installed in a micro LED display, the repair tape comprising: an elongated first tape material 2 which can be wound into a roll shape and has, on one surface thereof, an adhesive layer 22 to be adhered to LED chips 3; an elongated second tape material 4 which can be wound into a roll shape and has, on one surface thereof, an adhesive layer 42 having stronger adhesion than the adhesive layer 22 of the first tape material 2; and the LED chips 3, which are interposed between the first tape material 2 and the second tape material 4, and are disposed according to a predetermined arrangement, wherein electrode surfaces of the LED chips 3 are adhered to the adhesive layer of the first tape material, and light emitting surfaces of the LED chips 3 are adhered to the adhesive layer 42 of the second tape material 4. This configuration makes it possible to easily repair the LED chips.
C09J 201/00 - Adhesives based on unspecified macromolecular compounds
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
In the present invention, a condenser lens processes an ion beam so as to form a parallel beam shape and is provided with an electrically powered aperture that varies the passage area of the ion beam processed by the condenser lens and controls the beam diameter, the electrically powered aperture being provided between the condenser lens and an objective lens. The condenser lens is also provided with a plurality of beam-shielding plate units forming a pair of beam-shielding plates that face each other such that the ion beam passing through the condenser lens is sandwiched from both sides and that are capable of moving along a direction forming a right angle with respect to the optical axis of the ion beam. The plurality of beam-shielding plate units surround the ion beam, set the passing ion beam diameter of the ion beam, and are offset relative to one another along the optical-axis direction of the ion beam.
H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Following a determination that the distance along the Z-direction between the substrate and the mask is greater than the distance along the Z-direction to the nearest end of depth of field (DOF) for a camera from the near side of the mask, a control unit reduces the distance between the X-Y position of a substrate-mark and the X-Y position of the associated mask-mark, with a high-speed relative approach along the Z-direction between the substrate and the mask. Following a determination that the distance along the Z-direction between the substrate and the mask is equal to or less than the distance along the Z-direction to the nearest end of depth of field (DOF) from the near side of the mask, the control unit reduces the distance between the X-Y position of the substrate-mark and the X-Y position of the associated mask-mark, with a reduced-speed relative approach along the Z-direction.
C23C 14/04 - Coating on selected surface areas, e.g. using masks
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
Provided is a correction device that can perform positioning with high precision without increasing manufacturing costs. The correction device comprises: a first stage having a suctioning stage that sucks a substrate; a gantry provided on the upper side of the suctioning stage; a second stage provided on the gantry; a head provided on the second stage and having a correction head that corrects the substrate; a first moving unit that changes the relative position between the first stage and the gantry in a first direction; a second moving unit that changes the relative position between the first stage and the second stage in a second direction substantially orthogonal to the first direction; and a head moving unit that moves the head in relation to the second stage. The second stage has a first shaft provided substantially along the first direction and a second shaft provided substantially along the second direction, and the head moving unit moves the head in the first direction along the first shaft and moves the head in the second direction along the second shaft. The positioning precision of the head moving unit is higher than the positioning precision of the first moving unit and the positioning precision of the second moving unit.
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
H01L 21/66 - Testing or measuring during manufacture or treatment
25.
METHOD FOR CONTROLLING LIGHTING DEVICE, AND EXPOSURE DEVICE
Provided is a method for controlling a lighting device that uses a high-pressure mercury lamp as a light source, wherein, in an idling period during which exposure is suspended in a state where the high-pressure mercury lamp is lighted, a shutter is closed, and power supply to the high-pressure mercury lamp is made smaller than power supply to the high-pressure mercury lamp immediately before the idling period. Consequently, the replacement interval (apparent life) of the lamp can be extended by an operation method for the lamp without changing the performance of the lamp itself.
A defective part recognition device includes a microscope for obtaining a magnified image of a unit area for recognizing a defective part on the surface of a multi-layer film substrate; a spectral camera having an imaging surface where the magnified image is formed; and an information processing part for processing the spectrum information from the spectral camera. The information processing part includes a machine learning part for a clustering process on the spectrum information for each pixel, and a defect recognition part for recognizing a defective part from the result of the machine learning part. The machine learning part sets a cluster in the unit area and generates a histogram with a frequency, the number of pixels clustered into the cluster. The defect recognition part compares the frequency distribution of the generated histogram with that of a histogram free of defects and recognizes a defective part.
The present invention is a transfer apparatus for transferring electronic components to a transfer member and comprises: a first sticking device part 1 for sticking, to a light transmissive substrate S1 having a plurality of electronic components formed thereon, a first transfer member T1 in which the adhesive force thereof decreases due to ultraviolet light irradiation; a first transfer device part 2 for transferring the electronic components to one surface of the first transfer member by performing peeling via laser lift-off; an ultraviolet light irradiation device part 3 for decreasing the adhesive force of the first transfer member by irradiating the first transfer member with ultraviolet light in a state in which a treatment was performed to prevent exposure to oxygen; a second sticking device part 4 for sticking, to a substrate S2, a second transfer member T2 having a stronger adhesive force than the first transfer member in which the adhesive force thereof was decreased; a second transfer device part 5 for bonding together the first transfer member and second transfer member, and utilizing the difference in the adhesive forces thereof to peel the electronic components from the first transfer member and transfer the same to the second transfer member; and a control device part for controlling each part 1-5. The yield rate of the electronic components during transfer is thereby improved.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
Even in the case where an underlayer differs or a film thickness varies, high-quality repair is allowed to be performed.
Even in the case where an underlayer differs or a film thickness varies, high-quality repair is allowed to be performed.
When a laser repair method performs repair work by setting a laser irradiation area for a defect part of a multi-layer film substrate and irradiating the defect part with a laser beam under a set laser working condition, the laser repair method includes: identifying a peripheral region of a laser beam irradiation position; dividing the identified peripheral region into a plurality of divided regions for each common reflected light information; inferring a layer structure at the laser beam irradiation position from analogy based on an arrangement pattern of the divided regions positioned around the laser beam irradiation position; and setting the laser working condition of the laser beam to be emitted based on the layer structure inferred from analogy.
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23K 26/082 - Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/064 - Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
29.
Microscope image measuring device and microscope image measuring method
In a measurement of a microscope image, a measurement can be conducted with high accuracy when measuring a measuring object including a step having a depth larger than a depth of focus or comparing patterns at different positions along the optical axis of a microscope. A microscope image measuring device includes: a microscope for obtaining a magnified image of a surface of a measuring object by irradiating the surface with white incident light; a spectral camera for obtaining a spectral image of the magnified image; and an image processing part for extracting the spectral image at each wavelength and performs an image measuring process. The microscope forms an image of a different focal position at each wavelength on the imaging surface of the spectral camera, and the image processing part extracts a spectral image with a wavelength where a measuring point has the highest contrast, and performs edge detection.
Provided is a laser annealing device with which it is possible to improve production efficiency, even in reforming of a crystallizing film, as well as to save space and reduce cost. The present invention comprises a dehydrogenating optical head that emits a dehydrogenating laser beam, the dehydrogenating optical head being moved in a scanning direction relative to an amorphous silicon film such that the dehydrogenating laser beam is released ahead of a crystallizing laser beam, at least a planned reformulation region in the amorphous silicon film is irradiated, and the amorphous silicon film is dehydrogenated.
A laser repair method includes a repair process of performing repair work by setting a laser radiation range for a defect part in a multi-layer film substrate and irradiating the defect part with a laser beam under set laser working conditions. In the repair process, spectrum data of the defect part is acquired, and the laser working conditions of the laser beam, with which the defect part is to be irradiated, are set using a neural network after learning on the basis of the spectrum data, and the neural network has undergone machine learning using, as learning data, measurement data including multi-layer film structure data, spectrum data of each multi-layer film structure, and laser working experimental data of each multi-layer film structure.
H01L 21/66 - Testing or measuring during manufacture or treatment
G01N 21/27 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
32.
PHOTOMASK CORRECTION DEVICE AND METHOD FOR CORRECTING PHOTOMASK
A purpose of the present invention is to provide a photomask correction device with which it is possible to smoothly perform a film process so that a deposition film, which is a pattern film of a photomask, has suitable light transmittance. This photomask correction device comprises: measurement illumination units (4, 5) that irradiate illumination light from the front or back surface of a transparent stage (3) simultaneously with the irradiation of a focused ion beam from a focused ion beam device (2) onto a correction region for forming a pattern film or reducing film thickness when a photomask (50) is overlaid on the transparent stage (3); measurement light-receiving parts (6, 7) that are positioned on the other of the front or back surface of the transparent stage (3), receive transmitted light, which is illumination light that has been transmitted through the correction region, and measure the amount of received light; and a control unit (30) that controls the formation or reduction of the mask pattern film in the correction region by the focused ion beam device (2), on the basis of the amount of received light measured by the measurement light-receiving parts (6, 7).
G03F 1/74 - Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
With the present invention, a pellicle frame can be correctly grasped even if warped. The present invention comprises: a frame body (10) that is a frame-shaped member in which a plurality of rod-shaped members are assembled in a substantially rectangular shape; a plurality of pellicle grasping members (21) provided to the frame body (10); and a drive unit provided to each of the pellicle grasping members (21), the drive unit moving the pellicle grasping member between a first position at which the pellicle grasping member is inserted in a groove, and a second position at which the pellicle grasping member is not inserted in the groove. Each pellicle grasping member (21) has a plate-shaped or rod-shaped tip part, a portion of which being inserted in the groove when the pellicle grasping member (21) is in the first position. The tip part has a tip face that is inserted in the groove when the pellicle grasping member (21) is in the first position, the tip face being extended in a second direction that is substantially perpendicular to a first direction, which is the direction in which the pellicle grasping member moves. The tip part is provided with a marker that indicates the distance from the tip face.
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
The present invention enables a layer to be worked to be properly subjected to a correcting process without being affected by the variations in the material of the underlayer or in the film thickness of the layer. A laser repair method for irradiating a defect portion of a multilayer film structure formed on a substrate, and performing a correcting process is provided. The method includes: acquiring an image of a region including the defect portion; and setting a scan range of the laser beam on the image so as to include the defect portion. At the time of scan of the inside of the scan range with the laser beam, at a scanning position at which color information of the image is recognized as that of the defect portion, an output of the laser beam is controlled to be ON or High.
PRODUCTION METHOD FOR CONDUCTIVE PART, PRODUCTION METHOD FOR ELECTRONIC COMPONENT INCLUDING CONDUCTIVE PART, PRODUCTION METHOD FOR PRODUCT MADE FROM ELECTRONIC COMPONENT INCLUDING CONDUCTIVE PART, CONDUCTIVE PART, ELECTRONIC COMPONENT INCLUDING CONDUCTIVE PART, AND PRODUCT INCORPORATING ELECTRONIC COMPONENT INCLUDING CONDUCTIVE PART
Provided is a production method for simply forming a conductive part between a conductor that has an insulating layer at the surface thereof and another conductor. The present invention is a production method for a conductive part that includes a first step for layering a second conductor on a first conductor that has an insulating layer at the surface thereof and a second step for fusing the second conductor and the first conductor, including the insulating layer, to form a fused region and forming a hole that is surrounded by the fused region in the center of the fused region.
H05K 1/09 - Use of materials for the metallic pattern
H05K 3/08 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by electric discharge, e.g. by spark erosion
H05K 3/22 - Secondary treatment of printed circuits
[Problem] To provide a focused energy beam device having high inspection accuracy and processing accuracy by increasing the degree of vacuum in a processing space through which an energy beam passes. [Solution] A focused energy beam device comprising a head portion and a focused energy beam column, wherein: a central exhaust port and at least one or more outer-side exhaust grooves surrounding an outer side of the central exhaust port are formed on an opposing surface of the head portion; the focused energy beam column and the outer-side exhaust grooves perform differential pumping by being coupled to different vacuum pumps; and the head portion has a secondary exhaust port formed in a penetrating manner around the central exhaust port.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
37.
Carrier Film And Apparatus And Method For Repairing LED Display Panel
The present invention comprises a plurality of repair devices (3) that are arranged on a support film (2), each of which has a repair element in an opening (7) that is surrounded by a light shielding wall (6) for repairing a defective pixel (21) on a full-color LED display panel.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A pulse-form voltage is applied to a metal pattern, and the period of the pulse-form voltage is set shorter than the scan period of a focused ion beam; in a secondary charged particle image, in a metal pattern separated by a disconnection area, only the region that corresponds to the area where the pulse-form voltage is applied is formed as a first pattern region, which reflects the surface potential, which varies with time; the boundary region with a second pattern region, which depends on the surface potential, which does not change with time, is detected as a separation region, and disconnections or short-circuits in the metal pattern are detected on the basis of the presence or absence of separation regions.
H01L 21/66 - Testing or measuring during manufacture or treatment
G01N 23/2255 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident ion beams, e.g. proton beams
39.
LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS
With providing a workpiece that has a seed-crystal zone for microcrystalline silicon at a location proximate to the periphery of and aligned with one of transformation-scheduled regions, each of which is set to coextend with that portion of amorphous silicon which extends over one of gate fins, in a lateral straight line perpendicular to a longitudinal axis of the gate fins, a lateral crystal forming process carries out selective crystal growth by moving a continuous wave laser beam along the lateral straight line with the seed-crystal zone as a starting point to irradiate the amorphous silicon to grow crystalline silicon within the transformation-scheduled region.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
A projection exposure device (10) that comprises a mask mark illumination light source (21) that can radiate exposure light or first alignment light (L1) that has the same wavelength as the exposure light at a mask mark (MM), a work mark illumination light source (31) that can radiate second alignment light (L2) that has a different wavelength from the exposure light at a work mark (WM), an imaging device (32), and an imaging optical system (40). The imaging optical system (40) comprises: a first dichroic prism (41) that synthesizes the first alignment light (L1) and light from the work mark (WM) and emits the synthesized light toward the imaging device (32); and an optical path length modification optical system (42) that makes the first alignment light (L1) branch and converge. Relative to the imaging device (32), the optical positions of the work mark (WM) and an image (MMI) of the mask mark (MM) are equivalent. The present invention thereby provides a projection exposure device and a projection exposure method that make it possible to achieve highly precise alignment even when an exposure area is small.
A focused energy beam device equipped with a support part for supporting a substrate to be processed and a focused energy beam column which is provided with a differential pump and is capable of relative movement so as to correspond to a desired region of a surface to be processed of the substrate to be processed, wherein: said support part supports only the edge of the substrate to be processed, which is positioned horizontally; a positive pressure chamber for preventing flexure caused by the weight of the substrate to be processed itself by providing positive pressure across the entire region to be processed of the substrate to be processed is positioned below the substrate to be processed, which is supported by the support part; and a local negative pressure mechanism is provided inside said positive pressure chamber so as to offset the suction force of the differential pump by providing negative pressure while not contacting the undersurface of the substrate to be processed and so as to be capable of moving relative to the substrate to be processed so as to follow the differential pump while maintaining the state of opposing said differential pump with the substrate to be processed interposed therebetween.
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
G03F 1/74 - Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
The present invention makes it possible to observe a substrate surface while performing processing. A laser processing device is provided with: a light source for emitting laser light; a reflective liquid crystal element in which a plurality of pixels are disposed in a matrix pattern; a first polarizing beam splitter disposed in an optical path between the light source and the reflective liquid crystal element and in an optical path between the reflective liquid crystal element and an object to be processed; an image-forming optical system for forming an image on the object to be processed with the laser light reflected on the reflective liquid crystal element; a second polarizing beam splitter provided between the first polarizing beam splitter and the object to be processed, the second polarizing beam splitter having the same wavelength characteristics as the first polarizing beam splitter; a 1/4 wavelength plate provided in an optical path between the second polarizing beam splitter and the object to be processed; and an image pickup unit on which light reflected on the second polarizing beam splitter is incident, and irradiates the object to be processed with the laser light to process the object to be processed.
This bonding device 1 holds an end surface 8b on the opposite side to an electrode part 8a of each of a plurality of repair LEDs 8A having the soldered electrode part 8a, and electrically bonds, to a repair region 20 designated on a display panel 9 on which a plurality of LEDs 8 have been mounted, each of the repair LEDs 8A on a carrier tape 11 transferred in a longitudinal direction. The bonding device 1 is provided with, on the upstream side in the transfer direction of the carrier tape 11 from a bonding position at which the repair LED 8A is to be bonded to the repair region 20, a flux applying device 4 which applies a flux 17 on the electrode part 8a of the repair LED 8A.
In the present invention, the intensity distribution of light can be uniformized without using an optical system that uniformizes the intensity distribution. The present invention comprises a light source that emits laser light, a reflective liquid crystal element in which a plurality of pixels are positioned in matrix form, an polarization beam emitter that is positioned in an optical path between the light source and the reflective liquid crystal element and also in an optical path between the reflective liquid crystal element and an object being processed, and an image-forming optical system that forms the laser light reflected by the reflective liquid crystal element into an image on the object being processed, the object being processed being irradiated with the laser light to process the object being processed.
[Solution] Provided is a focused ion beam device comprising: a differential exhaust device and a focused ion beam column, and further comprising a vacuum pad made of a porous material that exposes a suction surface so as to surround the planar-direction outer side of a substrate to be processed, a substrate support on which the substrate to be processed and the vacuum pad are placed, and a vacuum pump for vacuum-suctioning the vacuum pad. When the head unit of the differential exhaust device moves to the planar-direction outer side of the substrate to be processed, the suction surface suctions air in the space between the suction surface and the head unit. The focused ion beam device does not require a large vacuum chamber, enables processing in the vicinity of the edge of the substrate to be processed, and makes it possible to increase the size of the processing region on the substrate to be processed.
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
A processing apparatus comprising a substrate support stage on which a substrate to be processed is mounted, and a head part that can move relative to a surface to be processed of the substrate to be processed, and further comprising a differential exhaust device that establishes high vacuum conditions in the processing space due to the action of suctioning from an exhaust channel formed in the head part, and a focused ion beam column, wherein, in the region of the substrate support stage where the substrate to be processed is mounted, a mounting surface that is lower than the height of the upper surface of the substrate support stage is formed, a side wall that forms a step is formed in the boundary between the mounting surface and the upper surface of the substrate to be processed, and an embankment-form sealing member that projects above the surface to be processed of the substrate to be processed is formed along the boundary.
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
47.
FIRED METAL INK WIRING MANUFACTURING METHOD AND PRODUCT MANUFACTURED BY FIRED METAL INK WIRING MANUFACTURING METHOD
A problem is to reduce the effect of heat during firing. The present invention resolves the problem by providing a fired metal wiring manufacturing method including the following steps. (Step 1) A step for applying a metal ink to a substrate in a wiring shape. (Step 2) Next, a step of irradiating a partial region of the metal ink with a firing laser to fire the metal ink. (Step 3) Next, a step of irradiating a wide range including at least the partial region with infrared light and firing at a lower temperature than the firing laser to obtain a fired metal ink wiring.
H05K 3/12 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using printing techniques to apply the conductive material
B05D 3/02 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
48.
CONTACT STRUCTURE AND METHOD FOR MANUFACTURING CONTACT STRUCTURE
The present invention addresses the problem of providing a novel contact structure. The present invention was able to solve this problem with a contact structure 9 comprising fired metal ink wiring 27, the contact structure being characterized in that the fired metal ink wiring 27 has a contact 112 covering other wiring 11 or an electrode, and a recess 28 is formed in a surface 21 of the fired metal ink wiring 27 of the contact 112.
H05K 3/22 - Secondary treatment of printed circuits
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.
C30B 1/06 - Recrystallisation under a temperature gradient
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
B23K 103/00 - Materials to be soldered, welded or cut
The present invention comprises: a differential exhaust device in which a plurality of annular grooves are formed in a to-be-processed-substrate-facing surface of a head part so as to surround the center of the head part, an opening that forms a processing space, in which the to-be-processed-surface can be processed, is formed in a region further inside than the innermost annular groove among the plurality of annular grooves, a vacuum pump is connected to at least one annular groove among the plurality of annular grooves, and the processing space is brought to a high vacuum state by an air intake operation from the annular grooves in a state in which the facing surface is caused to face the to-be-processed-surface; and a focused ion beam column that includes a lens barrel connected to the opening and capable of communicating with the processing space, has a focused ion beam optical system installed in the lens barrel, and emits a focused ion beam such that the focused ion beam passes through the inside of the opening, wherein a raw material gas supply part is connected to the innermost annular groove, and the raw material gas can be moved toward the processing space along the to-be-processed-surface by discharging the raw material gas from the annular groove toward the to-be-processed-surface.
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
51.
DIFFERENTIAL EXHAUST DEVICE AND FOCUSED ENERGY BEAM DEVICE
This differential exhaust device provides a high degree of vacuum to a treatment space. The differential exhaust device is provided with: a displacement driving unit that, by displacing a head unit or a to-be-treated substrate, is capable of adjusting a distance and a parallelism between a to-be-treated surface and an opposing surface of the head unit; gap measurement units that are disposed at at least 3 places along a periphery of the opposing surface of the head unit and that are capable of detecting a distance between the opposing surface and the to-be-treated surface; and a gap control unit that, on the basis of information about the distance that is between the opposing surface and the to-be-treated surface and that is detected by the gap measurement unit, controls the displacement driving unit such that the opposing surface and the to-be-treated surface are in parallel to each other with a predetermined distance therebetween.
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
This focused ion beam device is provided with a focused ion beam column in which a focused ion beam optical system is incorporated into a lens barrel, and which emits a focused ion beam from the distal end portion of the lens barrel, wherein an electron supply unit, such as a metal needle or a metal piece, which supplies electrons onto the surface of a substrate being processed, and a microchannel plate provided with a detecting unit for capturing secondary charged particles, for example, are disposed in the vicinity of the path of the focused ion beam emitted from the focused ion beam optical system, and employing such a simple configuration makes it possible to reduce the cost of the focused ion beam device, and furthermore makes it possible to provide a focused ion beam device capable of efficiently preventing charge-up.
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
53.
LIGHT SOURCE DEVICE FOR EXPOSURE, LIGHTING DEVICE, EXPOSURE DEVICE, AND EXPOSURE METHOD
This light source device for exposure is provided with a first LED array (71) which comprises multiple first LED elements (72) which emit exposure light, a second LED array (75) which has multiple second LED elements (76) which emit alignment light, and a dichroic film (81) which transmits light in a prescribed wavelength band and reflects light in other wavelength bands, wherein said dichroic film (81) is provided with a dichroic mirror (80) which is arranged inclined relative to an optical axis direction L common to the first and the second LED elements (72, 76), and a fly-eye lens (65) into which light of the first LED elements (72) or the second LED elements (76) is incident through the dichroic mirror (80). In the common optical axis direction L, the first LED array (71) is arranged on the side of the dichroic mirror (80) opposite of the fly-eye lens (65), and the second LED array (75) is arranged to the side of the dichroic mirror (70), intersecting the common optical axis direction L. By this means, alignment can be adjusted with high accuracy even when using LEDs as a light source and thus, exposure accuracy can be improved greatly.
According to the present invention, it is possible to autonomously replace a polishing tape. The present invention comprises: a stage on which a workpiece is mounted; a polishing head unit provided above the stage in the plumb vertical direction; a cassette having a polishing tape provided therein, the cassette being detachably provided to the polishing head unit; a cassette holding part to which the cassette is provided; a transport unit that transports the cassette between the polishing head unit and the cassette holding part; and a securing part provided to the polishing head unit, the securing part securing the cassette to the polishing head unit. The securing part has a rod-form part and an actuator that causes the rod-form part to move between a position contacting the cassette and a position not contacting the cassette. The cassette has a first reel on which a pre-usage polishing tape is wound, a second reel on which a post-usage polishing tape is wound, and a frame inside of which the first reel and the second reel are provided. The polishing head unit has a first drive shaft inserted into the first reel, and a second drive shaft inserted into the second reel. In a state in which the first drive shaft is inserted into the first reel and the second drive shaft is inserted into the second reel, the securing part presses the cassette using the rod-form part and secures the cassette to the polishing head unit.
Provided is a frame for vapor deposition masks, which is lightweight, has high stiffness, and rarely undergoes the generation of an out gas. The frame (50) for vapor deposition masks according to one embodiment is provided with a frame main body (51) which is so configured as to hold a vapor deposition mask. In the frame main body, each of a base material and a reinforcing material comprises a composite material composed of an inorganic solid material.
C23C 14/04 - Coating on selected surface areas, e.g. using masks
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
A laser anneal device (100) comprises a stage (20) having a receiving surface for receiving a substrate (22), a laser irradiating device (10), and a drive device capable of causing an irradiation region (R1) to be moved relative to the stage in the X-direction. The laser irradiating device comprises a laser device (10L) to emit a laser beam, a shaping optical system (10F) for shaping the laser beam into a substantially rectangular laser beam, and a light collecting unit (30) including a microlens array (34) and a mask (32) having a plurality of opening portions (32A), the light collecting unit (30) causing respective light-collecting points of the laser beam to be formed within the irradiation region (R1). The laser beam (LA) has a shape longer in the y-direction intersecting the X-direction and shorter in the x-direction orthogonal to the y-direction, wherein the x-direction intersects the X-direction at an angle θ (greater than 0°). The microlens array has a row parallel to the y-direction and a column parallel to the X-direction.
The present invention makes it possible to curb false detection and perform highly-accurate detection in the detection of defective parts of multilayer film substrates. A defect detection device is provided with: a microscope for obtaining a magnified image for detecting a defective part on a surface of a multilayer film substrate; a spectroscopic camera that has an imaging surface where the magnified image is formed and that outputs spectroscopic spectral information of the magnified image for respective pixels of the imaging surface; and an information processing unit for processing the spectroscopic spectral information outputted from the spectroscopic camera. The information processing unit is provided with: a machine learning unit for performing clustering processing of the spectroscopic spectral information of each of the pixels; and a defect detection unit for detecting a defective part from a processing result of the machine learning unit. The defect detection unit compares, against a normal binarized image, a binarized image of a classification area obtained from the result of the clustering processing of the machine learning unit, and extracts defective parts excluding pseudo-defective parts.
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
G01N 21/27 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
G01N 21/956 - Inspecting patterns on the surface of objects
The present invention makes it possible to move a substrate as a whole toward a reference surface smoothly when the substrate is pressed onto the reference surface. Provided is a substrate holding apparatus for holding a substantially plate-like substrate in a substantially vertical direction, wherein a plurality of holding blocks disposed vertically under the substrate and on which a lower end surface of the substrate abuts include an upper block abutting the lower end surface of the substrate and a lower block provided under the upper block. The upper block is movable relative to the lower block in a substrate thickness direction.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
59.
LENS ARRAY, LED LIGHTING UNIT, EXPOSURE DEVICE, AND EXPOSURE METHOD
A lens array (50) is provided with a lens plate (51) and a plurality of lenses (52). The lens plate (51) has lens regions (53) to which the lenses (52) are affixed, and non-lens regions (54) to which the lenses (52) are not affixed. A base plate to which LEDs are affixed has LED regions to which the LEDs are affixed, and non-LED regions to which the LEDs are not affixed. The lens plate (51) and the base plate (24) are fastened together with the lens regions (53) overlapping the LED regions and with the non-lens regions (54) overlapping the non-LED regions. As a result, it is possible to stably assemble the lens array to the base plate for the LEDs, and to achieve excellent illuminance distribution and size reduction.
F21V 17/00 - Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
F21V 29/503 - Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
F21V 29/56 - Cooling arrangements using liquid coolants
F21Y 105/12 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the geometrical disposition of the light-generating elements, e.g. arranging light-generating elements in differing patterns or densities
This laser annealing device causes a CW laser light to move unidirectionally relative to a noncrystalline silicon film, causing the noncrystalline silicon film to undergo lateral crystal growth to form a crystallized silicon film, wherein the optics comprise a beam shaping part for shaping the CW laser light into a laser beam forming a ring of condensed light, and a beam splitting part having a reflective surface for splitting and reflecting the shaped circular laser beam to generate a semicircular laser beam. The optics irradiate the semicircular laser beam onto a surface of the noncrystalline silicon film to be irradiated in such a manner that the outer peripheral edge of the semicircular laser beam is oriented in the relative moving direction of the laser beam.
The present invention is to enable accurate analysis in visualizing analysis results of spectroscopic imaging. The surface analysis method according to the present invention includes the steps for: acquiring spectroscopic image data regarding a sample surface using a spectroscopic camera; extracting n wavelengths distributed within a particular wavelength range in the acquired spectroscopic image data to set a spectrum of each wavelength in the spectroscopic image data as an n-dimensional space vector for each pixel; normalizing the space vector for each pixel; clustering the normalized space vectors into a particular number of classifications; and identifying and displaying, for each classification, the pixels clustered in the classifications.
G01N 21/27 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
G01N 21/956 - Inspecting patterns on the surface of objects
62.
POLYCRYSTALLINE FILM, METHOD FOR FORMING POLYCRYSTALLINE FILM, LASER CRYSTALLIZATION DEVICE AND SEMICONDUCTOR DEVICE
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION (Japan)
Inventor
Gotoh, Jun
Saito, Kaori
Ikenoue, Hiroshi
Abstract
The present invention is provided with a structure wherein: a plurality of crystal grains are uniformly arranged in the film surface direction so as to be adjacent to each other; and no-crystal-growth regions are arranged on both ends of a grain boundary surface, which divides a pair of the crystal grains adjacent to each other, in the film surface direction. The present invention enables the achievement of: a polycrystalline film such as a polycrystalline silicon thin film, aluminum thin film and copper thin film, said polycrystalline film having surface flatness, while having uniform and stable electrical characteristics and high mechanical characteristics; a method for forming a polycrystalline film; a laser crystallization device which is used for the production of a polycrystalline film; and a semiconductor device which is provided with a polycrystalline film, and has good electrical characteristics and high withstand voltage characteristics.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H01L 21/336 - Field-effect transistors with an insulated gate
The purpose of the present invention is to provide a laser irradiation device with which it is possible to form detailed images while scanning laser light. In this laser irradiation device, the intensity distribution of laser light is uniformized and is molded by a slit (12a), the laser light that has passed through the slit (12a) is formed into parallel light by a first optical member (15), the laser light is caused to form an image on an intermediate image surface (20) by a second optical member (17), and the laser light is scanned over the intermediate image surface (20) by using scan mirrors (16a, 16b). In addition, a reducing optical system (14) reduces a slit image formed on the intermediate image surface (20) to form an image on a machining surface of a workpiece (100).
Provided is an alignment device including a control unit 4: that adjusts, in the case in which a vertical distance between a mask 11 and a substrate 12 is greater than a front-end distance of the depth of field of a camera 3, horizontal positions of the mask 11 and the substrate 12 on the basis of the distance between a substrate mark 121 and a mask mark 112 while moving the substrate 12 so as to approach the mask 11 at high speed; and that adjusts, in the case in which the vertical distance between the mask 11 and the substrate 12 becomes equal to or less than the front-end distance of the depth of field of the camera 3, the horizontal positions of the mask 11 and the substrate 12 on the basis of the distance between the substrate mark 121 and the mask mark 112 while moving the substrate 12 so as to approach the mask 11 at a lower speed than the high-speed approaching movement.
C23C 14/04 - Coating on selected surface areas, e.g. using masks
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
65.
LIGHTING DEVICE FOR PROXIMITY EXPOSURE DEVICE, LED UNIT, PROXIMITY EXPOSURE DEVICE, AND EXPOSURE METHOD OF PROXIMITY EXPOSURE DEVICE
The present invention provides a lighting device capable of using, as a light source part, both a mercury lamp and an LED independently. This lighting device is provided with: a first light source part (30) that uses a mercury lamp (31) as a light source; a fly-eye lens (46) that makes light from the first light source part (30) uniform and emits the light; a plurality of reflecting mirrors (40, 41, 50, 51) that each reflect the light from the first light source part (30); a second light source part (61) that uses a plurality of LED elements (62) as a light source; and an LED unit (60) having a moving mechanism (70) that moves the second light source part (61) between an actuation position AP located on a light path EL of the first light source part (30) and a withdrawal position WP apart from the light path EL of the first light source part (30).
A laser annealing device that modifies a film to be annealed into a crystallized film by irradiating the film to be annealed, which has been formed on a substrate, with continuously oscillated laser light from a light source. This laser annealing device is provided with a beam processing unit which processes the continuously oscillated laser light into focusing laser beams; and the laser beams are relatively scanned with respect to the film to be annealed in a state where a spot on which most laser beams are focusing is positioned within the film to be annealed.
The present invention comprises: a plurality of light sources that each emit continuously oscillated laser light; and an optical head that processes the respective laser lights emitted from the plurality of light sources so as to form concentrated laser beams, enabling the respective laser beams to be projected in accordance with a sequence within the modification-planned region positioned above the gate line. In the optical head, in a state where spot sections that are most concentrated in each of the laser beams are positioned in the film interior of the amorphous silicon film at the modification-planned region, the laser beams are relatively scanned along a direction in which the gate line extends within the modification-planned region.
This laser annealing device is provided with light sources which emit continuous wave laser light, and an optical head which processes the laser light emitted from each light source to form converging laser beams, and which enables the laser beams to be projected to correspond to the inside of a planned reforming region positioned above a gateline, wherein the optical head is configured such that the inside of the planned reforming region is scanned relatively by the laser beam in the direction in which the gateline extends, in a state in which a spot portion at which the laser beam is most converged is positioned inside an amorphous silicon film in the planned reforming region.
The present invention can mechanically recognize the state of a defective part in a multilayer substrate and can perform correction processing that is not affected by the skill of an operator. This defective part recognition device comprises: a microscope that irradiates the surface of the multilayer substrate with white epi-illumination light to obtain a magnified image of a unit area where the defective part is recognized on the surface thereof; a spectroscopic camera that has an imaging surface on which the magnified image is formed, and outputs spectral spectrum information of the magnified image to each pixel of the imaging surface; and an information processing unit that processes the spectral spectrum information output from the spectroscopic camera, wherein the information processing unit includes a machine learning unit that clusters the spectral spectrum information for each pixel, and a defect recognition unit that recognizes the defective part from the processing result of the machine learning unit, the machine learning unit sets a cluster according to a layer structure present in a unit area, and generates a histogram with the number of pixels clustered in the cluster as a frequency, and the defect recognition unit recognizes the defective part according to the presence of clusters having different frequencies by comparing the frequency distribution of the generated histogram with the frequency distribution of a histogram in which there is no defect.
In microscope image measurement, the present invention makes it possible to conduct highly accurate measurement when, for example, measuring a measurement object having a level difference exceeding the depth of focus, and comparing patterns at different positions along the optical axis direction of the microscope. This microscope image measurement device comprises: a microscope that irradiates the surface of a measurement object with white incident light to acquire an enlarged image of the surface; a spectroscopic camera that acquires a spectroscopic image of the enlarged image; and an image processing unit that extracts spectroscopic images of each of wavelengths and performs image measurement processing. The microscope forms, on an imaging surface of the spectroscopic camera, images of different focal positions for each wavelength. The image processing unit performs edge detection by extracting a spectroscopic image of the wavelength at which the contrast of the location under measurement is the highest.
The purpose of the invention of the present application is to provide a high image quality light emitting display device by enabling higher definition and higher resolution. A light emitting display device (1) is provided with: a circuit substrate (2) on the surface of which a plurality of pixel regions (2A) are arranged in a matrix; a light emitting part (3) which is disposed in each of the pixel regions and provided with one or more light emitting elements (3R, 3G, 3B); and a pixel circuit chip (4) which is mounted to correspond to the pixel regions and drives the light emitting elements of the light emitting parts. The pixel circuit chip is provided with a pixel drive circuit (5) connected to the light emitting elements disposed in the pixel regions, and a logic circuit (6) connected to the pixel drive circuit, and the logic circuit inputs an output to the pixel drive circuit such that the light emitting elements in the pixel regions adjacent to each other are sequentially driven.
G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
The present invention can accommodate variations in a height direction due to various kinds of substrates with different thicknesses, assembly error, and the like without using a complicated mechanism. On the upper surface of a stage on which a mask is mounted, a rib having a height that changes and provided along a first direction approximately along a horizontal plane is provided. On the upper surface on the reverse side of the bottom surface of the rib, a plurality of recognition marks are provided along the first direction.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
73.
ELECTRONIC COMPONENT MOUNTING STRUCTURE, ELECTRONIC COMPONENT MOUNTING METHOD, AND LED DISPLAY PANEL
The present invention pertains to an electronic component mounting structure for mounting chip-type LED chips 3 on one surface of a wiring substrate 1. The LED chips 3 are each provided with a pair of electrode parts 30 each having a recess in the surface thereof. The wiring substrate 1 is provided with: salient bump electrodes 4 which are connected to the respective recesses of the electrode parts 30; and fixing members 2, the position of which is determined in accordance with the arrangement of said bump electrodes 4 and which is for fixing the LED chips 3. The bump electrodes 4 are joined face-to-face with the respective recesses of the electrode parts. The LED chips 3 are fixed to the wiring substrate 1 via the fixing members 2. With this configuration, it is possible to improve the mounting yield of the LED chips 3.
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
To enable good-quality repair to be performed even when there is a difference in a base layer and variance in film thickness. In a laser repair method, a laser irradiation range is set with regard to a defective portion in a multilayer film substrate, and at the time of irradiating the defective portion with laser light under set laser processing conditions to perform repair processing, a peripheral region of a laser light irradiation position is identified, the identified peripheral region is sectioned into a plurality of section region for each of common reflection light information, the layer structure of the laser light irradiation position is analogized on the basis of a layout pattern of section regions positioned in the periphery of the laser light irradiation position, and a laser processing condition of the laser light for irradiation is set on the basis of the analogized layer structure.
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/03 - Observing, e.g. monitoring, the workpiece
G01N 21/956 - Inspecting patterns on the surface of objects
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/08 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by electric discharge, e.g. by spark erosion
75.
ELECTRONIC COMPONENT MOUNTING STRUCTURE, MOUNTING METHOD THEREFOR, LED DISPLAY PANEL, AND LED CHIP MOUNTING METHOD
The present invention is an electronic component mounting structure in which a plurality of LED chips 3 are mounted on a wiring board 1, wherein the wiring board 1 is provided with an elastically deformable guide member 2 made of resin that, in the region where the plurality of LED chips 3 are mounted, receives an LED chip 3 and guides said LED chip 3 so as to enable electrical contact to be established between an electrode 8 of said LED chip 3 and a bump electrode 4 provided on the wiring board 1.
The present invention is an electronic component mounting structure which has a plurality of LED chips 3 mounted on a circuit board 1, wherein the circuit board 1 has, in a peripheral portion of a bump electrode 4 that is electrically connected to an electrode 8 of each LED chip 3 at the mounting part of each of the plurality of LED chips 3, an adhesive layer 2 that is heated and cured to adhere and fix the LED chips 3 to the circuit board 1, the adhesive layer 2 being formed by patterning a semi-cured adhesive.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 3/32 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
In the present invention, automation of laser review is enabled, serving to improve job efficiency and to yield consistent review quality without being affected by operator skill. This laser review method includes a review step for determining a laser scanning range for a defect in a multilayer-film substrate and performing review processing by directing a laser beam onto the defect under established laser processing conditions. In the review step, spectroscopic spectral data on the defect is acquired, and on the basis of the spectroscopic spectral data, the laser processing conditions for the laser beam to be directed onto the defect are determined by a trained neural network. The neural network is trained by machine learning, with the training data being actually measured data that contains data on multilayer structures, spectroscopic spectral data for each multilayer structure, and laser processing experimental data for each multilayer structure.
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/351 - Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
G01N 21/956 - Inspecting patterns on the surface of objects
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
The present invention makes it possible to perform review processing appropriately on a defect to be processed without being affected by irregularities in base-layer material properties and layer film thickness. This laser review method is for performing review processing by irradiating a layer to be processed with a laser beam in a defect in a multilayer structure formed on a substrate. The method determines a range for scanning the laser beam so as to cover the defect, identifies processed substances on the basis of the emission spectrum of light emitted by plasma generated from the laser-beam irradiation, and monitors the processing status of the layer to be processed according to the identification results.
G01N 21/71 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/351 - Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
79.
BONDING DEVICE, BONDING METHOD, AND DISPLAY DEVICE PRODUCTION METHOD
The present invention can pressurize an entire surface substantially uniformly, in a highly precisely positioned state. A substantially planar first suction section suctions a substantially planar first member thereto, a substantially planar second suction section provided on the upper side, in the vertical direction, of the first suction section suctions a transparent and substantially planar second member thereto, and the two members are bonded together. The second suction section is a substantially tubular member having both ends thereof covered. The lower surface of the second suction section is a transparent suction pad having a throughhole formed therein that penetrates in the thickness direction. The second member is suctioned to the suction pad by air being drawn into the throughhole through a suction port. The surface on the upper side of the second suction section has at least part thereof formed from a transparent member. An imaging unit provided on the upper side of the second suction section in the vertical direction captures an image of the first member and/or the second member via the transparent member and the suction pad.
The present invention provides a laser lift-off device provided with: an XY stage 1 for moving a workpiece 9 placed thereon; a laser radiating device 2 provided, in order from the upstream side to the downstream side in a direction of travel of light, with a laser head 16, a homogenizing optical system 17 for homogenizing an energy distribution within a cross section of laser light, a projection mask 18 including a slit having a shape corresponding to a laser irradiated portion of the workpiece 9, and a reduction projection optical system 19 which forms an image of the slit in the projection mask 18 on the laser irradiated portion; and a stage control unit 6 which generates a control pulse synchronized with the movement of the XY stage 1 in the X-axis direction, and which controls pulse oscillation of the laser head 16.
B23K 26/57 - Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
B23K 26/066 - Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
B23K 26/08 - Devices involving relative movement between laser beam and workpiece
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
81.
LENS UNIT, AND LIGHT RADIATING DEVICE PROVIDED WITH LENS UNIT
The objective of the present invention is to provide a lens unit capable of simultaneously forming images of a plurality of spots of light having a uniform illuminance distribution on an irradiated surface. This lens unit includes a first lens array 25 which uses light flux incident from a light source to form a plurality of secondary light sources, the number thereof corresponding to an array number, a second lens array 27 which guides light flux from the plurality of secondary light sources to an integrator lens 28, and the integrator lens, which collects the light flux that has passed through identical regions in each lens element of the second lens array onto a corresponding identical region on the irradiated surface 29, wherein, in the first lens array, the array number is further divided into units of the lens elements of the second lens array, and the first lens array is disposed on the light source side of the position of a plane that is conjugate with the irradiated surface, in the optical axis direction.
G02B 27/18 - Optical systems or apparatus not provided for by any of the groups , for optical projection, e.g. combination of mirror and condenser and objective
Provided are: a mirror for exposure capable of detecting the state of the mirror such as damage, amount of warping, and so forth, with an inexpensive configuration; a manufacturing method of the mirror for exposure; and an exposure device comprising the mirror for exposure. The mirror for exposure comprises: a reflection film that is formed on a front-face side of a plate glass and that is capable of reflecting light from a light source; and a conductive film-formation pattern that is formed as a film on a rear-face side of the plate glass to a thickness that is thinner than the thickness of the reflection film, so as to be formed continuously from one end portion to the other end portion, and that is fractured when the mirror for exposure is damaged so as to enable detection of the damage to the mirror for exposure.
According to the present invention, a layer to be processed can be appropriately subjected to corrective processing without being affected by a variation in the material of a base layer and the film thickness of the layer. In this laser repair method for performing corrective processing by irradiating, with a laser beam, a defective part of a multilayer film structure formed on a substrate: a sealed space including the defective part is set to be in a vacuum state or in a state where a noble gas flows therein; the laser beam scanning range including the defective part is set; the mass number of a material is identified inside the sealed space during laser beam scanning within the scanning range; and the laser beam scanning is completed at the time when the mass number of the material of the layer to be processed is not detected in the defective part from the identification result of the mass number.
B23K 26/351 - Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/12 - Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
Provided is a device substrate comprising a semiconductor layer that is formed on a surface of a substrate body, the semiconductor layer being irradiated with laser light for laser annealing. In the device substrate, the substrate body in the device substrate is prevented from peeling off by interposing a light shielding layer having a light-shielding property against the laser light between the substrate body and the semiconductor layer.
This device enables correctly identifying the irradiation angle in the case of performing diagonal exposure using a diffuse light source. This method, for measuring the irradiation angle of light irradiated onto an irradiated surface (F) during scanning exposure of the irradiated surface by the diffuse light source (1), involves setting multiple measurement points (P) every set interval on the irradiated surface along the scanning direction, making the light receiving surface (3A) of a illuminometer (3) match the irradiated surface at each measurement point, changing the orientation of the light receiving surface every set angle, measuring the illuminance at each angle (θ), calculating at each measurement point the maximum illuminance, at which the measured illuminance is maximum, and the angle of orientation of the light receiving surface at said maximum illuminance, multiplying the maximum illuminance by the angle of orientation of the light receiving surface at said maximum intensity, calculating the weighted average value of all measurement points, and setting this weighted average value as the irradiation angle during scan exposure.
G02F 1/1337 - Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
G01B 11/26 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes
The purpose of the present invention is to make it possible to perform a correcting process properly on a layer to be processed, without being affected by variations in the material of an underlayer or in the film thickness of the layer. Provided is a laser repair method for performing a correcting process by irradiating a defect portion of a multilayer film structure formed on a substrate with laser light, the laser repair method comprising: acquiring an image of a region including a defect portion; setting a laser light scanning range on the image so as to include the defect portion; and, during laser light scanning in the scanning range, controlling the output of the laser light to be ON or high at a scan position in which color information of the image is recognized to be a defect portion.
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23K 26/351 - Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 21/336 - Field-effect transistors with an insulated gate
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
This laser annealing device is provided with: a pulsed laser generating unit 12 which radiates a pulsed laser light beam as a first laser light beam L1 having a uniform luminance distribution; a continuous wave laser generating unit 13 which causes a continuous wave laser light beam to oscillate as a second laser light beam L2; and a laser beam radiating unit 20 which splits a plurality of first laser light beams L1 from one first laser light beam L1, and causes the second laser light beam L2 to be radiated with a prescribed radiation shape onto a substrate 1 being processed.
The present invention provides a light source device for exposure that is able to synthesize light from a plurality of LED elements having different peak wavelengths, and is compactly configured, an exposure device using the light source device, and an exposure method. This light source device for exposure is provided with: a first LED array (71) having a plurality of first LED elements (72) that emit light of a first peak wavelength; a second LED array (75) having a plurality of second LED elements (76) that emit light of a second peak wavelength different from the first peak wavelength; a photosynthetic element (80) that is provided with two dichroic films (81) for transmitting light in a specific wavelength band and reflecting light in the other wavelength bands, and synthesizes light from the first and second LED arrays (71, 75); and a fly-eye lens (65) on which the light synthesized by the photosynthetic element (80) is incident.
The present invention addresses the problem of enabling a photo-alignment exposure device, for implementing an oblique exposure method capable of causing a pre-tilt angle to stably appear, to use an inexpensive scattering light source (volume light source) and to realize uniform light irradiation even with a compact configuration. A photo-alignment exposure device (1) according to the present invention is for performing polarized scan exposure on a to-be-irradiated surface which becomes a photo-alignment film, and is provided with: a light source (2) for emitting scattering light toward the to-be-irradiated surface; an optical filter (3) through which the photosensitive wavelength of the photo-alignment film in the light emitted from the light source (2) is selectively emitted; and a light limitation member (4) that asymmetrically limits the light having passed through the optical filter (3) in the back-and-forth direction of a scanning direction (X), wherein the optical filter (3) has wavelength transmission characteristics where the transmittance of light having the photosensitive wavelength reaches a peak through oblique exposure where an irradiation angle in the scanning direction (X) is equal to or more than a set angle (θs) with respect to the normal direction of the surface being irradiated.
The present invention prevents resonance of a reflector and can so prevent generation of pseudo defects. According to the present invention, a holding member provided to a lateral surface of a roughly-rectangular frame for holding a mask to be inspected in a roughly vertical direction has: a hollow rod-shaped member which extends in a horizontal direction; a first attachment for attaching the rod-shaped member to the frame; and a second attachment to which this reflector is provided. The hollow rod-shaped member extends in the horizontal direction in order to horizontally move the frame along the upper surface of a platen. A light irradiation part, disposed at a height roughly equal to that of the reflector so as to emit light toward the reflector roughly in the horizontal direction, is provided to a pillar provided to the platen.
G01N 21/956 - Inspecting patterns on the surface of objects
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
91.
LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS
A lateral crystal forming step is carried out in which a substrate to be processed is prepared on which a seed crystal region made of microcrystalline silicon is formed outside of gate wiring in the direction orthogonal to the longitudinal direction of said gate wiring, in regions to be modified set in a noncrystalline silicon film positioned in a region above said gate wiring; starting at the seed crystal region, a continuous wave laser is moved along a direction orthogonal to the longitudinal direction of the gate wiring while irradiating the surface of the noncrystalline silicon film, and crystal growing is performed selectively such that the noncrystalline silicon film in each region to be modified becomes a crystallized silicon film.
A first laser beam irradiation of applying a first laser beam to change an amorphous silicon film to a microcrystal silicon film and a second laser beam irradiation of moving a second laser beam along a prescribed direction with the microcrystal silicon film as a starting point and causing lateral crystal growth of a crystallized silicon film on a substrate surface are performed to form microcrystal silicon films and crystallized silicon films alternately on the substrate surface along the prescribed direction.
The present invention comprises: a continuously oscillated laser that emits continuously oscillated laser light; and a mask 4 for transmitting the laser light emitted from the continuously oscillated laser to form a beam spot LBS to be projected onto an amorphous silicon film 5. In the mask 4, a downstream-side portion, in a movement direction Tr in which the beam spot LBS is relatively moved, is set to a high-transmittance region A in which the energy intensity is high, and an upstream-side portion in the movement direction is set to a low-transmittance region B in which the energy intensity is low.
According to the present invention, a continuously oscillated laser beam emitted from continuously oscillated laser is used as a laser beam to set, in a beam spot LBS, the energy density of a downstream-side portion in the movement direction (reverse direction of substrate movement direction T), in which the beam spot LBS is relatively moved, to be higher than the energy density of an upstream-side portion in the movement direction thereof; and the beam spot LBS is projected onto an end edge section in a modification planned region to form a seed crystal region, and then the beam spot LBS is moved in the movement direction to modify the entire surface of the modification planned region into a crystallized silicon film from the seed crystal region serving as a start point.
A deposition mask includes: a mask sheet formed by stacking a metal layer provided with a plurality of through holes on a film layer provided with a plurality of opening patterns, each through hole enclosing at least one of the opening patterns, and by dividing one surface of the mask sheet into a plurality of unit cells each including two or more of the opening patterns and two or more of the through holes; and a support member which is made of metal and has openings corresponding to the unit cells of the mask sheet, the support member supporting the mask sheet by being joined to the metal layer of the mask sheet to which no external tension is applied. This ensures high shape and positional deposition accuracy in forming thin film patterns using the deposition mask.
A laser annealing method comprises: a seed crystal region formation step for performing first irradiation by irradiating the surface of an amorphous silicon film with a first laser beam spot formed by a first laser beam in a wavelength range that is absorbed by amorphous silicon and melting the amorphous silicon to form a seed crystal region; and a modified region formation step for performing second irradiation by irradiating a region adjacent to the first laser beam spot with a second laser beam spot formed by a second laser beam in a wavelength range that is absorbed by the molten silicon after the silicon in the seed crystal region has been melted by performing the first irradiation, and growing crystallized silicon in a modified region continuous with the seed crystal region starting from the seed crystal region.
The present invention comprises: a support body (58) comprising a plurality of cassettes (55) that have light source units (51) attached to light source support units (54), said plurality of cassettes (55) being attached to cassette support units (56); and an exhaust device (76) that cools the plurality of light source units (51). The output of the exhaust device (76) is controlled on the basis of the temperature detected by a temperature sensor (75) for a dummy light source unit (71), such that the temperature of the light source units (51) is within a prescribed temperature range. As a result, the temperature of light source units can be controlled within an appropriate range and deterioration in performance of or damage to the light source units can be suppressed, using a simple mechanism.
The present invention comprises: a light source unit provided with a semiconductor laser that emits a laser beam; an equalizing element that includes a light incidence surface and a light emission surface facing the light incidence surface, and that is configured so that a laser beam which is directly projected from the semiconductor laser is incident on the light incidence surface and the equalized laser beam is emitted from the light emission surface; and an emission-side image forming system that projects the light emission surface of the equalizing element to a surface of a substrate to be processed.
A laser annealing apparatus that irradiates a region to be modified, in which modification of an amorphous silicon film is to be performed, with a laser beam to perform the modification by growing a crystallized silicon film in the region to be modified, the apparatus comprising a first irradiation unit for radiating a first laser beam that forms a seed crystal region on the amorphous silicon film, and a second irradiation unit that moves a beam spot of the laser beam radiated onto the surface of the amorphous silicon film starting from the seed crystal region so as to cover the region to be modified and performs the modification so that the amorphous silicon film in the region to be modified becomes the crystallized silicon film.
Provided is a laser anneal method for reforming a reformation-planned region, in which reformation of an amorphous silicon film is to be performed, into a crystallized silicon film by irradiating the reformation-planned region with laser light, the laser anneal method comprising a first irradiating step for performing first laser light irradiation for forming a seed crystal region comprising microcrystalline silicon in the amorphous silicon film outside the reformation-planned region, and a second irradiating step in which a surface of the amorphous silicon film is irradiated with second laser light starting from the seed crystal region, thereby causing crystal growth so that the amorphous silicon film in the reformation-planned region becomes the crystallized silicon film.
patents
