An apparatus for supporting and maneuvering a wafer comprises a handle having a gas inlet adapted to couple to a gas supply, a supporting surface coupled to the handle section including a frame structure having edge segments connecting at vertices and spoke elements extending from a center of the frame structure to the vertices, a gas supply channel coupled to the gas inlet that extends from the handle and branches into channels that run through the spoke elements, and a plurality of nozzles positioned at the vertices on the supporting surface and coupled to the channels in the spoke elements. Gas provided to the plurality of nozzles exits the nozzles in a stream directed parallel to the supporting surface and the stream of gas generates forces that enable wafers to be securely supported in a floating manner over the supporting surface without coming into direct contact with the supporting surface.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B65G 25/02 - Conveyors comprising a cyclically-moving, e.g. reciprocating, carrier or impeller which is disengaged from the load during the return part of its movement the carrier or impeller having different forward and return paths of movement, e.g. walking-beam conveyors
B65G 47/90 - Devices for picking-up and depositing articles or materials
B65G 47/91 - Devices for picking-up and depositing articles or materials incorporating pneumatic, e.g. suction, grippers
B65G 49/07 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers
An apparatus for supporting and maneuvering a wafer comprises a handle having a gas inlet adapted to couple to a gas supply, a supporting surface coupled to the handle section including a frame structure having edge segments connecting at vertices and spoke elements extending from a center of the frame structure to the vertices, a gas supply channel coupled to the gas inlet that extends from the handle and branches into channels that run through the spoke elements, and a plurality of nozzles positioned at the vertices on the supporting surface and coupled to the channels in the spoke elements. Gas provided to the plurality of nozzles exits the nozzles in a stream directed parallel to the supporting surface and the stream of gas generates forces that enable wafers to be securely supported in a floating manner over the supporting surface without coming into direct contact with the supporting surface.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
3.
AN APPARATUS AND METHOD FOR THE MINIMIZATION OF UNDERCUT DURING A UBM ETCH PROCESS
A semiconductor etch process is provided in which an undercut is minimized during an etch process through tight control of etch profile, recognition of etch completion, and minimization of over etch time to increase productivity.
A device for spraying substrates comprises a longitudinal extending fluid dispensing head coupled to a supply of fluid and including a perpendicularly extending flange, a spacer having first and second ends, the first end of the spacer coupled to the extending flange of the dispensing head, a nozzle adapted to eject fluid coupled to the second end of the spacer, and a locking nut enclosing the spacer and securely the dispensing head, spacer and nozzle.
B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
B05B 1/02 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops
B05B 1/12 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means capable of producing different kinds of discharge, e.g. either jet or spray
B05B 1/30 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
B05B 3/00 - Spraying or sprinkling apparatus with moving outlet elements or moving deflecting elements
A dispense arm device for controllably discharging a fluid onto a substrate includes a dispense head coupled to and contained within an arm portion of the dispense arm device, wherein the dispense head having a valve assembly that is configured to operate in: (1) a recirculation mode in which a dispense outlet formed in the dispense head is closed off and a recirculation path is opened for allowing heated chemistry that is delivered to the dispense head to be delivered back from the dispense head to a remote location (e.g., a recycle tank); and (2) a dispense mode in which the dispense outlet is opened to allow heated chemistry to be discharged from the dispense head and the recirculation path is closed off.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
6.
CONFIGURABLE HIGH TEMPERATURE CHUCK FOR USE IN A SEMICONDUCTOR WAFER PROCESSING SYSTEM
A reconfigurable wafer spin chuck for supporting a wafer includes a rotatable chuck base having a first opening formed therein and including one or more support members extending upwardly therefrom. The spin chuck is reconfigurable between a first chuck type and a second chuck type, wherein the first chuck type comprises a non-contact wafer type chuck and the second chuck type comprises an open backside frame type chuck. In the non- contact wafer type chuck, a first insert is mounted to the chuck base and supported by the one or more support members and in the open backside frame type chuck, a second insert is mounted to the chuck base and supported by the one or more support members. The wafer is spaced a first distance from the first insert and is spaced a second distance from the second insert, the second distance being greater than the first distance.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
B05C 13/02 - Means for manipulating or holding work, e.g. for separate articles for particular articles
The wafer processing system includes a rotatable wafer support member for supporting a wafer and a plurality of collections trays disposed about a peripheral edge of the wafer support member. The collection trays are arranged in a stacked configuration, each collection tray having an inner wall portion and an outer wall portion that converge to define a trough section for collecting fluid. The system includes a chamber exhaust outlet that is formed in the housing for venting gas from the interior of the housing outside of the collection trays and a chemical exhaust outlet that is formed in the housing for venting gas that flows through the collection chamber to the chemical exhaust outlet. The chemical exhaust outlet can be fluidly isolated from the chamber exhaust outlet.
B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
B08B 15/02 - Preventing escape of dirt or fumes from the area where they are producedCollecting or removing dirt or fumes from that area using chambers or hoods covering the area
B08B 3/14 - Removing waste, e.g. labels, from cleaning liquid
A housing of a wafer processing system includes at least one chamber exhaust outlet and at least one chemical exhaust outlet. The chamber exhaust outlet is formed in the housing for venting gas from the interior of the housing and the chemical exhaust outlet is formed in the housing for venting gas that flows along at least one of: (a) a first flow path defined between the splash shield in a raised position and the collection trays in the lowered position; and (b) a second flow path in which the gas flows through the collection chamber to the chemical exhaust outlet.
B08B 3/10 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
9.
AN APPARATUS AND METHOD FOR WAFER THINNING IN ADVANCED PACKAGING APPLICATIONS
A system and method are provided for etching semiconductor wafers (integrated circuit substrates) with advanced packaging using a two-step wet etching process. The first etch step uses an etchant that is non-selective to at least the wafer material (silicon) and metals, such as copper and titanium, that are present in the wafer. The second etch step uses an etchant that is selective to the wafer material (silicon) and has low selectivity for the metals, thereby leaving them at least substantially intact.
An apparatus and method for removing post MLO (Material Lift Off) materials from a recycle solvent stream utilize a space efficient design and in a fashion that greatly reduces equipment downtime to maintenance and in a health friendly fashion.
B01D 29/90 - Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups Filtering elements therefor having feed or discharge devices for feeding
B01D 35/12 - Devices for taking out of action one or more units of multi-unit filters, e.g. for regeneration
F16K 27/04 - Construction of housingsUse of materials therefor of sliding valves
G05B 19/04 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
11.
AN APPARATUS AND METHOD TO CONTROL ETCH RATE THROUGH ADAPTIVE SPIKING OF CHEMISTRY
An apparatus and method are provided to: determine a unique profile to etch each wafer, execute that etch, and determine and deliver the proper chemical addition in order to maintain etch rate within tight tolerances.
An apparatus and method for mixing fluids with degradational properties are disclosed herein. The present system has been devised to safely and accurately dilute, heat and deliver a degradable fluid while simultaneously removing extraneous vapor, adding capability to monitor the temperature and capability to monitor the concentration of the diluted fluid.
B08B 3/04 - Cleaning involving contact with liquid
B01F 15/04 - Forming a predetermined ratio of the substances to be mixed
G05D 11/02 - Controlling ratio of two or more flows of fluid or fluent material
G05D 11/08 - Controlling ratio of two or more flows of fluid or fluent material with auxiliary non-electric power by sensing concentration of mixture, e.g. by measuring pH-value
13.
APPARATUS AND METHOD FOR METALS FREE REDUCTION AND CONTROL OF RESISTIVITY OF DEIONIZED WATER
An apparatus and method to convert high resistivity (18 MOhm/cm) deionized water into lower resistivity deionized water with a tight resistivity range (150 KOhm/cm +\- 50 KOhm/cm) without adding metals to the DI. The invention discreetly injects carbon dioxide in an on demand fashion through a metals free fluid path.
An apparatus and method to convert high resistivity (18 MOhm/cm) deionized water into lower resistivity deionized water with a tight resistivity range. The apparatus is diminished in size to require less space, has an improved sensitivity resistivity probe to permit a lower operating range, an increased communication rate with updated control logic to permit holding tighter tolerances. The method is environmentally friendly in that it replaces the use of harsh chemistries and eliminates the generation of hazardous waste.
A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a wafer before and after each etching steps in the process. The system also includes a controller to analyze the thickness measurements in view of a target wafer profile and generate an etch recipe, dynamically and in real time, for each etching step. In addition, the process controller can cause a single wafer wet etching station to etch the wafer according to the generated etching recipes. In addition, the system can, based on the pre and post-etch thickness measurements and target etch profile, generate and/or refine the etch recipes.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.
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