A module collection and deposition system comprises a container, a module source wafer comprising modules released from the module source wafer, a module collection device operable to remove the modules from the module source wafer and dispose the modules as a disordered and dry collection into the container, and a module deposition device for removing the modules from the container and randomly disposing the modules on a receiving surface. Each module comprises an electronically active unpackaged component.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
A micro-transfer-printable component source structure includes a source wafer comprising an anchor portion, a sacrificial portion disposed on only a portion of the source wafer adjacent to the anchor portion, a component disposed directly and exclusively over the sacrificial portion, and a vertical tether physically connecting the component to the source wafer. The vertical tether extends from the component along a side of the sacrificial portion to the anchor portion and includes a vertical portion that extends in a direction at least partially orthogonal to a surface of the source wafer. The vertical portion can be between the component and the source wafer or adjacent to the component. Components with vertical tethers require less area on the source wafer and can be micro-transfer printed to a target substrate in closer alignment.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A micro-optical structure includes a structure substrate comprising a cavity and a micro-optical component disposed entirely and directly over or in the cavity. The micro-optical component includes a micro-optical element and a component tether physically attached to an anchor portion of the structure substrate and in contact with the micro-optical element. The structure substrate and the micro-optical component can be monolithic, for example unitary and comprise a same material or are the same material. The micro-optical component can be disposed on a sacrificial portion disposed on a micro-optical component source wafer differentially etchable form the sacrificial portion. The micro-optical component can be disposed on a micro-optical component source wafer patterned with an encapsulation layer where the micro-optical component is differentially etchable from the encapsulation layer and the micro-optical component.
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
4.
PATTERNED ADHESIVE IN CAVITIES FOR MICRO-TRANSFER PRINTING
A printed structure includes a target substrate having a target-substrate surface, a structure disposed in or on the target substrate, the structures having a structure side that extends at least partially orthogonal to the target-substrate surface, a patterned adhesive layer disposed on the target-substrate surface not in contact with the structure side, and a component having a component side, the component disposed on the patterned adhesive layer with the component side adjacent to the structure side.
A micro-optical component includes a micro-substrate, a micro-optical element disposed on the micro-substrate, and a stand-off (a mechanical spacer) disposed on the micro-substrate or micro-optical component in a separate plane from the micro-substrate that at least partially encloses the micro-optical element. The micro-optical components can be stacked on a system substrate using micro-transfer printing to form a three-dimensional micro-optical structure. One more light beams can travel or pass through various combinations of multiple micro-optical components and micro-optical elements.
A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be 10 any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.
A hybrid document includes a flexible document and a component having a component substrate disposed in or on the flexible document. One or more inorganic light-emitting diodes, a controller electrically connected to the one or more inorganic light-emitting diodes for controlling the one or more inorganic light-emitting diodes, and a piezoelectric power source are disposed on the component substrate. The power source can include a plurality of electrically connected individual piezoelectric power-source elements electrically connected to the controller, the inorganic light-emitting diodes, or both. Each of the one or more inorganic light-emitting diodes, the controller, the component substrate, or each of the individual piezoelectric power-source elements can comprise a broken or separated tether. The component substrate can be a flexible substrate that is more flexible than any one of the inorganic light-emitting diodes, the controller, and the individual piezoelectric power-source elements.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
F21S 9/04 - Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply the power supply being a generator
F21V 23/00 - Arrangement of electric circuit elements in or on lighting devices
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H10N 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups
An exemplary micro-optical component includes a micro-substrate and a micro-optical element disposed on the micro-substrate. The micro-optical element is structured to modify or process light. At least a portion of a component tether is physically attached to the micro-substrate or physically attached to the micro-optical element. The micro-optical component has a thickness less than 250 µm. Light can be processed by reflection, refraction, diffraction, frequency changes, polarization changes, color-temperature or frequency distribution changes, or phase changes. The micro-optical component can be disposed on a system substrate to form a micro-optical system. The system substrate can include a cavity and the micro-optical element can be disposed at least partially in the cavity. Micro-optical components can be passive optical micro-devices. A light-active element can be disposed on the micro-substrate to receive light from or emit light to the micro-optical element.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
An exemplary micro-optical component includes a micro-substrate and a micro-optical element disposed on the micro-substrate. The micro-optical element is structured to modify or process light. At least a portion of a component tether is physically attached to the micro-substrate or physically attached to the micro-optical element. The micro-optical component has a thickness less than 250 μm. Light can be processed by reflection, refraction, diffraction, frequency changes, polarization changes, color-temperature or frequency distribution changes, or phase changes. The micro-optical component can be disposed on a system substrate to form a micro-optical system. The system substrate can include a cavity and the micro-optical element can be disposed at least partially in the cavity. Micro-optical components can be passive optical micro-devices. A light-active element can be disposed on the micro-substrate to receive light from or emit light to the micro-optical element.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/138 - Integrated optical circuits characterised by the manufacturing method by using polymerisation
A micro-module includes a module substrate, an antenna having antenna walls and an antenna top surface disposed on or over the module substrate, and a sealant disposed on the module substrate surface and on at least a portion of the antenna walls. The sealant extends to at least the antenna top surface. The antenna walls and sealant form an enclosed area of the module substrate surface surrounded by the antenna walls and sealant. A module circuit is disposed on or in the module substrate in the enclosed area. The module circuit is electrically connected to the antenna and is responsive to electrical signals received from the antenna. A cap is disposed on or over the antenna top surface and the sealant, encapsulating the module circuit.
A stamp for micro-transfer printing includes a support having a support surface and posts disposed on the support surface. Each post has a proximal end in contact with the support and a distal end extending away from the support. The post has a post surface on the distal end. The post surface is a structured surface comprising spatially separated ridges that extend in a ridge direction entirely across the post surface and can be operable to form multiple delamination fronts when a first side of a micro-device is in contact with the post surface, a second side of the micro-device is in contact with a target surface of a target substrate, and the support is moved in a horizontal direction parallel to the target substrate surface. The post surface or ridges can be rectangular or non-rectangular with opposing edges having different lengths.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
A monolithic multi-FET transistor comprises an epitaxial layer disposed on a dielectric layer. The epitaxial layer comprises a crystalline semiconductor material and a multi-FET area. An isolation structure surrounds the multi-FET area and divides the multi-FET area into separate FET portions. A gate disposed on a gate dielectric extends over each FET portion. A source and a drain are each disposed on opposite sides of the gate on the epitaxial layer within each FET portion. Each gate, source, and drain comprise a separate electrical conductor and the gate, source, drain, and epitaxial layer within each FET portion form a field-effect transistor. Gate, source, and drain contacts electrically connect the gates, sources, and drains of the separate FET portions, respectively. At least the sources or drains of two neighboring FET portions are disposed in common over at least a portion of the isolation structure dividing the two neighboring FET portions.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A printed structure includes a target substrate and structures extending from a surface of the target substrate and a component disposed on the surface in alignment with the structures. The structures can be spatially separated independent structures. The component is non-native to the target substrate and can comprises a component substrate separate and independent from the target substrate. The component can be micro-transfer printed to the target substrate and can comprise a broken, fractured, or separated tether.
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
G02B 6/42 - Coupling light guides with opto-electronic elements
A method of assembling components includes the steps of providing a stamp, providing a component disposed on an adhesive surface, pressing the stamp against the component to adhere the component to the stamp, pulling the stamp away from the adhesive surface, and removing the component from the adhesive surface with the stamp. The adhesive surface can deform in a direction of the stamp and can enable progressive delamination of the adhesive surface from a bottom of the component from an edge or corner of the component toward a center of the component, thereby reducing the instantaneous adhesive force between the component and at least a portion of the adhesive surface. The method can enable the transfer and assembly of many millions of small and fragile components per hour with excellent precision from a tape to a target substrate.
A flexible electronic structure includes a flexible substrate comprising an electrically conductive top substrate layer and an opposing electrically conductive bottom substrate layer and a component. The component can include a component substrate non-native to the flexible substrate having a component substrate top side and an opposing component substrate bottom side, a planar component top electrode disposed on the component substrate top side and electrically connected to the electrically conductive top substrate layer thereby defining a planar electrical contact, and a planar component bottom electrode disposed on the component substrate bottom side and electrically connected to the electrically conductive bottom substrate layer thereby defining a planar electrical contact. The component can be disposed between the electrically conductive top substrate layer and the electrically conductive bottom substrate layer.
A printed structure includes a target substrate and structures extending from a surface of the target substrate and a component disposed on the surface in alignment with the structures. The structures can be spatially separated independent structures. The component is non-native to the target substrate and can comprises a component substrate separate and independent from the target substrate. The component can be micro-transfer printed to the target substrate and can comprise a broken, fractured, or separated tether.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/76 - Making of isolation regions between components
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
According to embodiments of the present disclosure, a micro-system comprises a frame, a component attached to and supported by the frame, and an electrically functional micro-device disposed on or in the frame and electrically connected to the component. The component can be exclusively supported by the frame. The frame can comprise the micro-device and can comprise the same materials and layer structure as the component. The component, frame, and micro-device can comprise a piezoelectric material. The component can be an acoustic resonator and the micro-device can be a capacitor.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
A suspended device structure comprises a substrate, a cavity disposed in a surface of the substrate, and a device suspended entirely over a bottom of the cavity. The device is a piezoelectric device and is suspended at least by a tether that physically connects the device to the substrate. The tether has a non-linear centerline. A wafer can comprise a plurality of suspended device structures. A device structure can comprise a device over a sacrificial portion or cavity and a tether with a tether opening extending to the sacrificial portion or cavity. The tether or tether opening can have a T shape. The tether can have a tether length at least one third as large as a device length and the device can have a device length at least twice as large as a device width.
According to embodiments of the present disclosure a micro-device comprises a frame and a component separated from the frame by a gap except where the component is connected to the frame with cantilever supports extending from the component to the frame. The internal frame contour of the frame can be non-rectangular. The external contour of the frame can be rectangular. The frame can follow the external contour of the component and cantilever supports except where the cantilever supports are connected to the frame. The internal or external contour of the frame can comprise slits extending into the frame. The gap separating the frame from the component can have a uniform width except where the cantilever supports are connected to the frame. In some embodiments, a micro-device is disposed on a target substrate comprising a cavity and the component is suspended over the cavity.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A micro-device structure includes an insulating layer and a micro-device disposed on the insulating layer. A pocket is formed in the micro-device that extends from a surface of the micro-device opposite the insulating layer through the micro-device to the insulating layer. A micro-component is disposed in the pocket and is non-native to the micro-device and the insulating layer. The micro-component can emit or receive light through the insulating layer and can be connected to and controlled by a micro-circuit disposed in the micro-device.
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An embedded component stack includes a first metal layer, a first dielectric layer disposed on the first metal layer, a second metal layer disposed on the first dielectric layer, a first component disposed and embedded entirely within the first dielectric layer and entirely between the first metal layer and the second metal layer, a second dielectric layer disposed on the second metal layer, and a second component disposed on or embedded entirely within the second dielectric layer. The first and second components can be bare, unpackaged dies disposed over the metal layers by micro-transfer printing. The metal layers can be patterned and can be electrically connected to the components. The first component can be rotated with respect to the second component. Multiple components can be embedded in one or more of the dielectric layers.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
A stamp includes a rigid support and an array of posts disposed in combination with the rigid support. Each of the posts in the array of posts extends in a direction away from the rigid support. The distal end of each of the posts in the array of posts has a structured three-dimensional surface including a first micro-post that extends a first distance away from the rigid support and a second micro-post that extends a second distance away from the rigid support. The second distance is less than the first distance.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A multi-component transistor structure includes components each comprising an individual, discrete, and separate component substrate and a component transistor. The component transistor includes a transistor element having a transistor element resistance. A component connection is disposed external to the transistor element and has a connection resistance. The component connection electrically connects the transistor elements in the components in parallel. The connection resistance is less than the transistor element resistance of at least one corresponding transistor element, less than an average of the transistor element resistances of all of the corresponding transistor elements, or less than the sum of all of the transistor element resistances of all of the corresponding transistor elements. The component transistors are functionally similar and at least one of the components is disposed on another different one of the components in a component stack.
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
A printed structure includes a substrate comprising a substrate surface, a substrate circuit disposed in or on in a circuit area of the substrate surface, a substrate post protruding from the substrate surface exterior to the circuit area, and a component having a component top side and a component bottom side opposite the component top side. The component bottom side can be disposed on the substrate post and adhered to the substrate surface forming an air gap between the component bottom side and the substrate circuit. The substrate post can comprise a substrate post material that is a cured adhesive. Some embodiments comprise a substrate electrode and the component comprises an electrically conductive connection post extending from the component bottom side toward the substrate in electrical contact with the substrate electrode.
A micro-device structure includes a substrate having a substrate surface and a substrate contact disposed on or in the substrate surface, a cavity extending into the substrate from the substrate surface, a micro-device disposed in the cavity, the micro-device comprising a micro-device contact, a planarization layer disposed over at least a portion of the substrate, and an electrode disposed at least partially over or on the planarization layer and electrically connected to the micro-device contact.
A suspended device structure comprises a substrate, a cavity disposed in a surface of the substrate, and a device suspended entirely over a bottom of the cavity. The device is a piezoelectric device and is suspended at least by a tether that physically connects the device to the substrate. The tether has a non-linear centerline. A wafer can comprise a plurality of suspended device structures.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
27.
TRANSFER PRINTING STAMPS AND METHODS OF STAMP DELAMINATION
A stamp for micro-transfer printing includes a support having a support surface and posts disposed on the support surface. Each post has a distal end extending away from the support. The post has a post surface on the distal end. The post surface is a structured surface comprising spatially separated ridges that extend in a ridge direction entirely across the post surface and can be operable to form multiple delamination fronts when a first side of a micro-device is in contact with the post surface, a second side of the micro-device is in contact with a target surface of a target substrate, and the support is moved in a horizontal direction parallel to the target substrate surface. The post surface or ridges can be rectangular or non-rectangular with opposing edges having different lengths.
B41K 3/02 - Apparatus for stamping articles having integral means for supporting the articles to be stamped with stamping surface located above article-supporting surface
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
A micro-device structure includes a substrate having a substrate surface and a substrate contact disposed on or in the substrate surface, a cavity extending into the substrate from the substrate surface, a micro-device disposed in the cavity, the micro-device comprising a micro-device contact, a planarization layer disposed over at least a portion of the substrate, and an electrode disposed at least partially over or on the planarization layer and electrically connected to the micro-device contact.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
29.
INTEGRATED-CIRCUIT MODULE COLLECTION AND DEPOSITION
A module collection and deposition system comprises a container, a module source wafer comprising modules released from the module source wafer, a module collection device operable to remove the modules from the module source wafer and dispose the modules as a disordered and dry collection into the container, and a module deposition device for removing the modules from the container and randomly disposing the modules on a receiving surface. Each module comprises an electronically active unpackaged component.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A stacked electronic component comprises a stack of three or more print layers. Each print layer has an area less than any print layers beneath the print layer in the stack. Each print layer comprises a dielectric layer and a functional layer disposed on the dielectric layer. The functional layer comprises an exposed conductive portion that is not covered with a dielectric layer of any of the print layers and each exposed conductive portion is nonoverlapping with any other exposed conductive portion. A patterned electrode layer is coated on at least a portion of the stack and defines one or more electrodes. Each electrode of the one or more electrodes in electrical contact with an exclusive subset of the exposed conductive portions. The functional layers can be passive conductors forming capacitors, resistors, inductors, or antennas, or active layers forming electronic circuits.
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H05K 1/16 - Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An example of a method of making a heterogeneous semiconductor structure, includes providing a first substrate including a first material; providing a second substrate including a printable processable coupon, wherein the coupon includes a second material different from the first material; and printing the coupon to the first substrate. The method can includes processing the coupon on the first substrate to form an integrated circuit. An example of a heterogeneous structure includes a substrate including a first material and one or more non-native coupons disposed on the substrate, the coupon including a second material different from the first material. The second material can be or comprise an epitaxial material, such as a compound semiconductor material. The first material can be or comprise an elemental semiconductor, such as silicon.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B41M 3/00 - Printing processes to produce particular kinds of printed work, e.g. patterns
32.
PRINTABLE COMPONENT MODULES WITH FLEXIBLE, POLYMER, OR ORGANIC MODULE SUBSTRATES
A micro-component module comprises a module substrate, a component disposed on the module substrate, and at least a portion of a module tether in contact with the module substrate. The module substrate can be flexible or can comprise an organic material, or both. The module tether can be more brittle and less flexible than the module substrate. The component can be less flexible than the module substrate and can comprise at least a portion of a component tether. An encapsulation layer can be disposed over the component and module substrate. The component can be disposed in a mechanically neutral stress plane of the micro-component module. A micro-component module system can comprise a micro-component module disposed on a flexible system substrate, for example by micro-transfer printing. A micro-component module can comprise an internal module cavity in the module substrate with internal module tethers physically connecting the module substrate to internal anchors.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 25/10 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 25/13 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
A variable-stiffness module comprises a rigid structure (10) having a first stiffness, an intermediate substrate (20) having a second stiffness less than the first stiffness, and a flexible substrate (30) having a third stiffness less than the second stiffness. The rigid structure (10) is disposed on the intermediate substrate (20) and the intermediate substrate (20) is disposed on the flexible substrate (30). A conductor (40) is disposed partially on the intermediate substrate (21) and partially on the flexible substrate (30) and connected to the rigid structure (10). The conductor (40) extends from the rigid structure (10) to the intermediate substrate (21) to the flexible substrate (30). In some embodiments, a variable-stiffness module comprises any combination of multiple rigid structures, multiple intermediate substrates, and multiple conductors. The conductor (40) can be an optical conductor or an electrical conductor and can be disposed over the rigid structure (10) or between the rigid structure (10) and the intermediate substrate (21).
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
A hybrid document includes a flexible document having visible markings. One or more light-controlling elements and a controller are embedded in or on the flexible document. The controller is electrically connected to the one or more light-controlling elements to control the one or more light-controlling elements. A power input connection is electrically connected to the controller, or one or more light-controlling elements, or both. A power source can be connected to the power input connection, for example a piezoelectric or photovoltaic power source. In response to applied power, the controller causes the one or more light-controlling elements to emit light. In some embodiments, the controller includes a memory and a value can be stored in the memory and displayed by the light-controlling element(s). In some embodiments, the value can be assigned or varied by a hybrid currency teller machine.
H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output
H02N 2/18 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
A stacked electronic component comprises a stack of three or more print layers. Each print layer has an area less than any print layers beneath the print layer in the stack. Each print layer comprises a dielectric layer and a functional layer disposed on the dielectric layer. The functional layer comprises an exposed conductive portion that is not covered with a dielectric layer of any of the print layers and each exposed conductive portion is nonoverlapping with any other exposed conductive portion. A patterned electrode layer is coated on at least a portion of the stack and defines one or more electrodes. Each electrode of the one or more electrodes in electrical contact with an exclusive subset of the exposed conductive portions. The functional layers can be passive conductors forming capacitors, resistors, inductors, or antennas, or active layers forming electronic circuits.
H05K 1/16 - Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
The Board of Trustees of the University of Illinois (USA)
X-Celeprint Limited (Ireland)
Inventor
Rogers, John A.
Nuzzo, Ralph
Meitl, Matthew
Menard, Etienne
Baca, Alfred
Motala, Michael
Ahn, Jong-Hyun
Park, Sang-Il
Yu, Chang-Jae
Ko, Heung Cho
Stoykovich, Mark
Yoon, Jongseung
Abstract
Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/0288 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0525 - Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01S 5/02 - Structural details or components not essential to laser action
H01S 5/02251 - Out-coupling of light using optical fibres
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/30 - Structure or shape of the active region; Materials used for the active region
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
A micro-device structure comprises a source substrate comprising sacrificial portions laterally spaced apart by anchors. At least a portion of each of the sacrificial portions is exposed through an opening. A micro-device is disposed on (e.g., exclusively in direct contact with) each of the sacrificial portions and laterally attached to one of the anchors by a hybrid tether. The hybrid tether comprises an organic tether layer and an inorganic tether layer.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
38.
Overhanging device structures and related methods of manufacture
A overhanging device cavity structure comprises a substrate and a cavity disposed in or on the substrate. The cavity comprises a first cavity side wall and a second cavity side wall opposing the first cavity side wall on an opposite side of the cavity from the first cavity side wall. A support extends from the first cavity side wall to the second cavity side wall and at least partially divides the cavity. A device is disposed on, for example in direct contact with, the support and extends from the support into the cavity.
A monolithic multi-FET transistor comprises an epitaxial layer disposed on a dielectric layer. The epitaxial layer comprises a crystalline semiconductor material and a multi-FET area. An isolation structure surrounds the multi-FET area and divides the multi-FET area into separate FET portions. A gate disposed on a gate dielectric extends over each FET portion. A source and a drain are each disposed on opposite sides of the gate on the epitaxial layer within each FET portion. Each gate, source, and drain comprise a separate electrical conductor and the gate, source, drain, and epitaxial layer within each FET portion form a field-effect transistor. Gate, source, and drain contacts electrically connect the gates, sources, and drains of the separate FET portions, respectively. At least the sources or drains of two neighboring FET portions are disposed in common over at least a portion of the isolation structure dividing the two neighboring FET portions.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.
A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.
A micro-component comprises a component substrate having a first side and an opposing second side. Fenders project from the first and second sides of the component substrate and include first-side fenders extending from the first side and a second-side fender extending from the second side of the component substrate. At least two of the first-side fenders have a non-conductive surface and are disposed closer to a corner of the component substrate than to a center of the component substrate.
A compound acoustic wave filter device comprises a support substrate having an including two or more circuit connection pads. An acoustic wave filter includes a piezoelectric filter element and two or more electrodes. The acoustic wave filter is micro-transfer printed onto the support substrate. An electrical conductor electrically connects one or more of the circuit connection pads to one or more of the electrodes.
H03H 3/00 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
H03H 3/007 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
A micro-component (99) comprises a component substrate (10) having a first side (11) and an opposing second side (12). Fender protrusions project (21, 22) from the first (11) and second (22) sides of the component substrate (10) and include first-side fender protrusions (21) extending from the first side (11) and a second- side fender protrusions (22) extending from the second side (12) of the component substrate (10). At least two of the first-side fender protrusions (21) may have a non-conductive surface and are disposed closer to a corner of the component substrate (10) than to a center of the component substrate (10). The fender protrusions (21,22) prevent randomly positioned micro-components in a container (90) to stick together due to van der Waals, electrostatic forces, or hydrogen bonding during storage. The application also discloses a method of dispensing a plurality of micro-components with said fender protrusions from said container (90) onto a target substrate, as well as the use of the fender projections to indicate or encode information.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/98 - Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices
H01L 23/485 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.
A hybrid document includes a flexible document having visible markings. One or more light-controlling elements and a controller are embedded in or on the flexible document. The controller is electrically connected to the one or more light-controlling elements to control the one or more light-controlling elements. A power input connection is electrically connected to the controller, or one or more light-controlling elements, or both. A power source can be connected to the power input connection, for example a piezoelectric or photovoltaic power source. In response to applied power, the controller causes the one or more light-controlling elements to emit light. In some embodiments, the controller includes a memory and a value can be stored in the memory and displayed by the light-controlling element(s). In some embodiments, the value can be assigned or varied by a hybrid currency teller machine.
H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output
H02N 2/18 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
A hybrid document includes a flexible document having visible markings. One or more light-controlling elements and a controller are embedded in or on the flexible document. The controller is electrically connected to the one or more light-controlling elements to control the one or more light-controlling elements. A power input connection is electrically connected to the controller, or one or more light-controlling elements, or both. A power source can be connected to the power input connection, for example a piezoelectric or photovoltaic power source. In response to applied power, the controller causes the one or more light-controlling elements to emit light. In some embodiments, the controller includes a memory and a value can be stored in the memory and displayed by the light-controlling element(s). In some embodiments, the value can be assigned or varied by a hybrid currency teller machine.
G06K 19/02 - Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the selection of materials, e.g. to avoid wear during transport through the machine
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
G06K 19/077 - Constructional details, e.g. mounting of circuits in the carrier
A hybrid document includes a flexible document having visible markings. One or more light-controlling elements and a controller are embedded in or on the flexible document. The controller is electrically connected to the one or more light-controlling elements to control the one or more light-controlling elements. A power input connection is electrically connected to the controller, or one or more light-controlling elements, or both. A power source can be connected to the power input connection, for example a piezoelectric or photovoltaic power source. In response to applied power, the controller causes the one or more light-controlling elements to emit light. In some embodiments, the controller includes a memory and a value can be stored in the memory and displayed by the light-controlling element(s). In some embodiments, the value can be assigned or varied by a hybrid currency teller machine.
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
G06K 19/077 - Constructional details, e.g. mounting of circuits in the carrier
A monolithic multi-FET transistor comprises an epitaxial layer disposed on a dielectric layer. The epitaxial layer comprises a crystalline semiconductor material and a multi-FET area. An isolation structure surrounds the multi-FET area and divides the multi-FET area into separate FET portions. A gate disposed on a gate dielectric extends over each FET portion. A source and a drain are each disposed on opposite sides of the gate on the epitaxial layer within each FET portion. Each gate, source, and drain comprise a separate electrical conductor and the gate, source, drain, and epitaxial layer within each FET portion form a field-effect transistor. Gate, source, and drain contacts electrically connect the gates, sources, and drains of the separate FET portions, respectively. At least the sources or drains of two neighboring FET portions are disposed in common over at least a portion of the isolation structure dividing the two neighboring FET portions.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A multi-element sensor for measuring a magnetic field. The multi-element sensor comprises a magnetic sensing element, and an electronic circuit. The magnetic sensing element comprises a sensor substrate and a magnetic sensor. The magnetic sensing element is mounted on the electronic circuit and contact pads are provided on the magnetic sensor. The contact pads of the magnetic sensing element are electrically connected with the electronic circuit. The electronic circuit is produced in a first technology and/or first material and the magnetic sensing element is produced in a second technology and/or second material different from the first technology/material, and the contact pads are disposed next to an edge or at a corner of the sensor substrate.
An example of a printable electronic component includes a component substrate having a connection post side and an opposing contact pad side. The component can include one or more non-planar, electrically conductive connection posts protruding from the connection post side of the component substrate. Each of the one or more connection posts can have a peak area smaller than a base area. The component can include one or more non-planar, electrically conductive exposed component contact pads disposed on (e.g., directly on, indirectly on, or in) the contact pad side of the component substrate. Multiple components can be stacked such that connection post(s) of one are in contact with non-planar contact(s) of one or more others.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.
An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.
A component structure comprises a substrate and a sacrificial layer comprising a sacrificial material disposed on or in the substrate. The sacrificial layer defines sacrificial portions laterally spaced apart by anchors. A component is disposed entirely over each sacrificial portion and connected to at least one anchor by a tether. A spacer comprising a spacer material is disposed in or on the sacrificial portion at least partially between the tether and the substrate. For at least one etchant, the spacer material etches faster than the sacrificial material when exposed to the etchant.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A micro-component comprises a component substrate having a first side and an opposing second side. Fenders project from the first and second sides of the component substrate and include first-side fenders extending from the first side and a second-side fender extending from the second side of the component substrate. At least two of the first-side fenders have a non-conductive surface and are disposed closer to a corner of the component substrate than to a center of the component substrate.
An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.
A suspended device structure comprises a substrate, a cavity disposed in a surface of the substrate, and a device suspended entirely over a bottom of the cavity. The device is a piezoelectric device and is suspended at least by a tether that physically connects the device to the substrate. The tether has a non-linear centerline. A wafer can comprise a plurality of suspended device structures.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
A suspended device structure comprises a substrate, a cavity disposed in a surface of the substrate, and a device suspended entirely over a bottom of the cavity. The device is a piezoelectric device and is suspended at least by a tether that physically connects the device to the substrate. The tether has a non-linear centerline. A wafer can comprise a plurality of suspended device structures. A device structure can comprise a device over a sacrificial portion or cavity and a tether with a tether opening extending to the sacrificial portion or cavity. The tether or tether opening can have a T shape. The tether can have a tether length at least one third as large as a device length and the device can have a device length at least twice as large as a device width.
An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.
A variable-stiffness module comprises a rigid structure (10) having a first stiffness, an intermediate substrate (20) having a second stiffness less than the first stiffness, and a flexible substrate (30) having a third stiffness less than the second stiffness. The rigid structure (10) is disposed on the intermediate substrate (20) and the intermediate substrate (20) is disposed on the flexible substrate (30). A conductor (40) is disposed partially on the intermediate substrate (21) and partially on the flexible substrate (30) and connected to the rigid structure (10). The conductor (40) extends from the rigid structure (10) to the intermediate substrate (21) to the flexible substrate (30). In some embodiments, a variable-stiffness module comprises any combination of multiple rigid structures, multiple intermediate substrates, and multiple conductors. The conductor (40) can be an optical conductor or an electrical conductor and can be disposed over the rigid structure (10) or between the rigid structure (10) and the intermediate substrate (21).
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
G02B 6/10 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
G02B 6/42 - Coupling light guides with opto-electronic elements
An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.
An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.
A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
65.
Overhanging device structures and related methods of manufacture
A overhanging device cavity structure comprises a substrate and a cavity disposed in or on the substrate. The cavity comprises a first cavity side wall and a second cavity side wall opposing the first cavity side wall on an opposite side of the cavity from the first cavity side wall. A support extends from the first cavity side wall to the second cavity side wall and at least partially divides the cavity. A device is disposed on, for example in direct contact with, the support and extends from the support into the cavity.
A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
67.
Device structures with acoustic wave transducers and connection posts
A device structure comprises an acoustic wave transducer comprising a component. The component comprises a piezo-electric material. Component electrodes are disposed on the component and connection posts extend away from the component. Each of the connection posts is electrically connected to one of the component electrodes. The component has a center and a length greater than a width and, for at least one pair of the connection posts, a distance between the connection posts and the center is less than one quarter of the length.
A compound acoustic wave filter device comprises a support substrate having an including two or more circuit connection pads. An acoustic wave filter includes a piezoelectric filter element and two or more electrodes. The acoustic wave filter is micro-transfer printed onto the support substrate. An electrical conductor electrically connects one or more of the circuit connection pads to one or more of the electrodes.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
A hybrid currency banknote includes a banknote having visible markings. One or more light-controlling elements and a controller are embedded in or on the banknote. The controller is electrically connected to the one or more light-controlling elements to control the one or more light-controlling elements. A power input connection is electrically connected to the controller, or one or more light-controlling elements, or both. A power source can be connected to the power input connection, for example a piezoelectric or photovoltaic power source. In response to applied power, the controller causes the one or more light-controlling elements to emit light. A value can be stored in a memory in the controller and displayed by the light-controlling elements. The value can be assigned or varied by a hybrid currency teller machine.
A semiconductor structure suitable for micro-transfer printing comprises a semiconductor substrate and a patterned insulation layer disposed on or over the semiconductor substrate. The insulation layer pattern forms one or more etch vias in contact with the semiconductor substrate. In some embodiments, each etch via is exposed. A semiconductor device is disposed on the patterned insulation layer and is surrounded by an isolation material in one or more isolation vias that are adjacent to the etch via. The etch via can be at least partially filled with a semiconductor material that is etchable with a common etchant as the semiconductor substrate. In some embodiments, the etch via is empty and the semiconductor substrate is patterned to forma gap that separates at least a part of the semiconductor device from the semiconductor substrate and forms a tether physically connecting the semiconductor device to an anchor (e.g., a portion of the semiconductor substrate or the patterned insulation layer).
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
71.
MICRO-TRANSFER-PRINTABLE FLIP-CHIP STRUCTURES AND METHODS
In certain embodiments, a method of making a semiconductor structure suitable for transfer printing (e.g., micro-transfer printing) includes providing a support substrate (10) and disposing and processing one or more semiconductor layers on the support substrate to make a completed semiconductor device (22). A patterned release layer (30) and, optionally, a capping layer (60) are disposed on or over the completed semiconductor device and the patterned release layer or capping layer, if present, are bonded to a handle substrate (50) with a bonding layer (40). The support substrate is removed to expose the completed semiconductor device and, in some embodiments, a portion of the patterned release layer. In some embodiments, an entry path is formed to expose a portion of the patterned release layer. In some embodiments, the release layer is etched and the completed semiconductor devices transfer printed (e.g., micro-transfer printed) from the handle substrate to a destination substrate.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
A multi-element sensor for measuring a magnetic field. The multi-element sensor comprises a magnetic sensing element, and an electronic circuit. The magnetic sensing element is mounted on the electronic circuit and comprises a fractured tether. The magnetic sensing element is electrically connected with the electronic circuit. The electronic circuit is produced in a first technology and/or first material and the magnetic sensing element is produced in a second technology and/or second material different from the first technology/material.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 43/04 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details of Hall-effect devices
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
73.
Hybrid banknote with electronic indicia using near-field-communications
A hybrid high-security document includes a document and one or more independent light-emitting modules disposed on or embedded in the document. Each module comprises an antenna with multiple turns, an electronic circuit, and a light emitter mounted and electrically connected on a substrate separate from the document. The electronic circuit is responsive to electrical power provided from the antenna to control the light emitter to emit light. The electronic circuit can include a memory storing information relevant to the hybrid high-security document or its use. The information can be accessed by external readers providing electromagnetic energy to the hybrid high-security document. The hybrid high-security document can be a hybrid banknote.
G08B 25/10 - Alarm systems in which the location of the alarm condition is signalled to a central station, e.g. fire or police telegraphic systems characterised by the transmission medium using wireless transmission systems
B42D 25/485 - Controlling the manufacturing process by electronic processing means
G07D 7/12 - Visible light, infrared or ultraviolet radiation
H04B 5/00 - Near-field transmission systems, e.g. inductive loop type
G08B 5/36 - Visible signalling systems, e.g. personal calling systems, remote indication of seats occupied using electromagnetic transmission using visible light sources
G06K 19/077 - Constructional details, e.g. mounting of circuits in the carrier
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
74.
Antenna with micro-transfer-printed circuit element
An electromagnetic communication device includes a device substrate, an antenna formed on or in the device substrate, and a circuit element having an electrical circuit and one or more electrically conductive connection posts protruding from the circuit element. Each of the connection posts is electrically connected to the electrical circuit and at least one connection post is electrically connected to the antenna.
Embodiments of the present invention provide a compound power transistor device including a first semiconductor substrate including a first semiconductor material, a second semiconductor substrate including a second semiconductor material different from the first semiconductor material, and a power transistor formed in or on the second semiconductor substrate. In certain embodiments, the second semiconductor substrate is micro-transfer printed on and secured to the first semiconductor substrate.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/367 - Cooling facilitated by shape of device
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
A semiconductor chip for measuring a magnetic field. The semiconductor chip comprises a magnetic sensing element, and an electronic circuit. The magnetic sensing element is mounted on the electronic circuit. The magnetic sensing element is electrically connected with the electronic circuit. The electronic circuit is produced in a first technology and/or first material and the magnetic sensing element is produced in a second technology and/or second material different from the first technology/material.
H01L 43/04 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details of Hall-effect devices
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
G01R 33/00 - Arrangements or instruments for measuring magnetic variables
A hybrid document includes a document having visible markings, one or more light-controlling elements embedded in or on the document, and a controller including a circuit having a non-volatile memory. The controller is embedded in or on the document and electrically connected to the one or more light-controlling elements for controlling the one or more light-controlling elements. A power input connection is electrically connected to any one or all of the controller, the circuit, the memory, or the one or more light-emitting elements. The memory stores a state and the circuit causes the one or more light-controlling elements to indicate the state. A hybrid document validation machine is adapted to accept one or more of the hybrid documents, change the state of the hybrid documents, and optionally display the state on a display.
G07D 7/00 - Testing specially adapted to determine the identity or genuineness of valuable papers or for segregating those which are unacceptable, e.g. banknotes that are alien to a currency
A micro-transfer printable transverse bulk acoustic wave filter comprises a piezoelectric filter element having a top side, a bottom side, a left side, and a right side disposed over a sacrificial portion on a source substrate. A top electrode is in contact with the top side and a bottom electrode is in contact with the bottom side. A left acoustic mirror is in contact with the left side and a right acoustic mirror is in contact with the right side. The thickness of the transverse bulk acoustic wave filter is substantially less than its length or width and its length can be greater than its width. The transverse bulk acoustic wave filter can be disposed on, and electrically connected to, a semiconductor substrate comprising an electronic circuit to control the transverse bulk acoustic wave filter and form a composite heterogeneous device that can be micro-transfer printed.
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 9/145 - Driving means, e.g. electrodes, coils for networks using surface acoustic waves
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
A wirelessly powered display comprises a substrate,an antenna with multiple turns disposed on the substrate, an electronic circuit disposed on the substrate, and one or more pixels each having one or more inorganic light-emitting diodes disposed on the substrate. The electronic circuit is electrically connected to the one or more inorganic LEDs and the antenna, the antenna is responsive to electromagnetic energy to provide electrical power, and the electronic circuit includes a power converter that converts a signal with a relatively high current and low voltage to a signal with a relatively high voltage and low current. A wirelessly coupled display system includes a device including a wireless power transmitter that provides wireless power within a specified range and one or more wirelessly powered displays located within the range and responsive to the wireless power provided by the device to display an image.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
G06K 19/077 - Constructional details, e.g. mounting of circuits in the carrier
H04B 5/00 - Near-field transmission systems, e.g. inductive loop type
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
80.
Hybrid banknote with electronic indicia using near-field-communications
A hybrid high-security document includes a document and one or more independent light-emitting modules disposed on or embedded in the document. Each module comprises an antenna with multiple turns, an electronic circuit, and a light emitter mounted and electrically connected on a substrate separate from the document. The electronic circuit is responsive to electrical power provided from the antenna to control the light emitter to emit light. The electronic circuit can include a memory storing information relevant to the hybrid high-security document or its use. The information can be accessed by external readers providing electromagnetic energy to the hybrid high-security document. The hybrid high-security document can be a hybrid banknote.
G08B 25/10 - Alarm systems in which the location of the alarm condition is signalled to a central station, e.g. fire or police telegraphic systems characterised by the transmission medium using wireless transmission systems
B42D 25/485 - Controlling the manufacturing process by electronic processing means
G07D 7/12 - Visible light, infrared or ultraviolet radiation
H04B 5/00 - Near-field transmission systems, e.g. inductive loop type
G08B 5/36 - Visible signalling systems, e.g. personal calling systems, remote indication of seats occupied using electromagnetic transmission using visible light sources
G06K 19/077 - Constructional details, e.g. mounting of circuits in the carrier
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
81.
MICRO-TRANSFER PRINTED LED AND COLOR FILTER STRUCTURE
A micro-transfer printed intermediate structure comprises an intermediate substrate and one or more pixel structures disposed on the intermediate substrate. Each pixel structure includes an LED, a color filter, and a fractured pixel tether physically attached to the pixel structure. A fractured intermediate tether is physically attached to the intermediate substrate. A method of making an intermediate structure source wafer comprises providing a source wafer having a patterned sacrificial layer including sacrificial portions separated by anchors, disposing an intermediate substrate over the patterned sacrificial layer, and disposing one or more pixel structures on the intermediate substrate entirely on or over each sacrificial portion. Each pixel structure includes an LED, a color filter, and a fractured pixel tether physically attached to the pixel structure to form an intermediate structure.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A printed electrical connection structure includes a substrate having one or more electrical connection pads and a micro-transfer printed component having one or more connection posts. Each connection post is in electrical contact with a connection pad. A resin is disposed between and in contact with the substrate and the component. The resin has a reflow temperature less than a cure temperature. The resin repeatedly flows at the reflow temperature when temperature-cycled between an operating temperature and the reflow temperature but does not flow after the resin is exposed to a cure temperature. A solder can be disposed on the connection post or the connection pad. After printing and reflow, the component can be tested and, if the component fails, another component is micro-transfer printed to the substrate, the resin is reflowed again, the other component is tested and, if it passes the test, the resin is finally cured.
A display having fused light-emitting diodes (LEDs) includes a display substrate and an array of pixel components disposed on the display substrate. Each pixel component comprises a light-emitting diode and an electrical fuse electrically connected in series with the light-emitting diode. The micro-transfer printable pixel components include an LED having first and second LED electrical contacts for providing power to the LED to cause the LED to emit light, a fuse having first and second fuse electrical contacts, the first fuse electrical contact electrically connected in series with the first LED electrical contact, a first electrode connected to the second fuse electrical contact, and a second electrode connected to the second LED electrical contact.
G09G 3/3216 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using a passive matrix
G09G 3/3233 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
A hybrid currency banknote includes a banknote having visible markings. One or more light-controlling elements and a controller are embedded in or on the banknote. The controller is electrically connected to the one or more light-controlling elements to control the one or more light-controlling elements. A power input connection is electrically connected to the controller, or one or more light-controlling elements, or both. A power source can be connected to the power input connection, for example a piezoelectric or photovoltaic power source. In response to applied power, the controller causes the one or more light-controlling elements to emit light. A value can be stored in a memory in the controller and displayed by the light-controlling elements. The value can be assigned or varied by a hybrid currency teller machine.
A micro-transfer printable electronic component includes one or more electronic components, such as integrated circuits or LEDs. Each electronic component has device electrical contacts for providing electrical power to the electronic component and a post side. A plurality of electrical conductors includes at least one electrical conductor electrically connected to each of the device electrical contacts. One or more electrically conductive connection posts protrude beyond the post side. Each connection post is electrically connected to at least one of the electrical conductors. Additional connection posts can form electrical jumpers that electrically connect electrical conductors on a destination substrate to which the printable electronic component is micro-transfer printed. The printable electronic component can be a full-color pixel in a display.
H01L 25/03 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A method of making a micro-transfer printed system includes providing a source wafer (10) having a plurality of micro-transfer printable source devices (12 arranged at a source spatial density; providing an intermediate wafer (20) having a plurality of micro-transfer printable intermediate supports (24) arranged at an intermediate spatial density less than or equal to the source spatial density; providing a destination substrate (30); micro-transfer printing the source devices from the source wafer to the intermediate supports of the intermediate wafer with a source stamp having a plurality of posts at a source transfer density to make an intermediate device (22) on each intermediate support; and micro-transfer printing the intermediate devices from the intermediate wafer to the destination substrate at a destination spatial density less than the source spatial density with an intermediate stamp having a plurality of posts at an intermediate transfer density less than the source transfer density.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A hybrid currency banknote includes a banknote having visible markings. One or more light-controlling elements and a controller are embedded in or on the banknote. The controller is electrically connected to the one or more light-controlling elements to control the one or more light-controlling elements. A power input connection is electrically connected to the controller, or one or more light-controlling elements, or both. A power source can be connected to the power input connection, for example a piezoelectric or photovoltaic power source. In response to applied power, the controller causes the one or more light-controlling elements to emit light. A value can be stored in a memory in the controller and displayed by the light-controlling elements. The value can be assigned or varied by a hybrid currency teller machine.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Embodiments of the present invention provide a compound optical filter device comprising a semiconductor substrate having an optical transducer formed on the semiconductor substrate, the optical transducer responsive to light to produce a signal or responsive to a signal to emit light. An optical filter comprises a filter substrate separate and independent from the semiconductor substrate and one or more optical filter layers disposed on the filter substrate. The filter substrate is micro-transfer printed on or over the semiconductor substrate or on layers formed over the semiconductor substrate and over the optical transducer to optically filter the light to which the optical transducer is responsive or to optically filter the light emitted by the optical transducer. In further embodiments, the optical filter is an interference filter and the semiconductor substrate includes active components that can control or operate the optical transducer.
A compound acoustic wave filter device comprises a support substrate having an including two or more circuit connection pads. An acoustic wave filter includes a piezoelectric filter element and two or more electrodes. The acoustic wave filter is micro-transfer printed onto the support substrate. An electrical conductor electrically connects one or more of the circuit connection pads to one or more of the electrodes.
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
A compound sensor device includes a semiconductor substrate having an active electronic circuit formed in or on the semiconductor substrate. A sensor including a sensor substrate including a sensor circuit having an environmental sensor or actuator formed in or on the sensor substrate is micro-transfer printed onto the semiconductor substrate. One or more electrical conductors electrically connect the active electronic circuit to the sensor circuit. The semiconductor substrate includes a first material and the sensor substrate includes a second material different from the first material.
H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
B81C 3/00 - Assembling of devices or systems from individually processed components
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
91.
WAFER-INTEGRATED, ULTRA-LOW PROFILE CONCENTRATED PHOTOVOLTAICS (CPV) FOR SPACE APPLICATIONS
A concentrator-type photovoltaic module includes a plurality of photovoltaic cells having respective surface areas of less than about 4 square millimeters (mm) electrically interconnected in series and/or parallel on a backplane surface, and an array of concentrating optical elements having respective aperture dimensions of less than about 30 mm and respective focal lengths of less than about 50 mm. The array of concentrating optical elements is positioned over the photovoltaic cells based on the respective focal lengths to concentrate incident light on the photovoltaic cells, and is integrated on the backplane surface by at least one spacer structure on the backplane surface. Related devices, operations, and fabrication methods are also discussed.
The disclosed technology relates generally to methods and systems for controlling the release of micro devices. Prior to transferring micro devices to a destination substrate, a native substrate is formed with micro devices thereon. The micro devices can be distributed over the native substrate and spatially separated from each other by an anchor structure. The anchors are physically connected/secured to the native substrate. Tethers physically secure each micro device to one or more anchors, thereby suspending the micro device above the native substrate. In certain embodiments, single tether designs are used to control the relaxation of built-in stress in releasable structures on a substrate, such as Si (1 0 0). Single tether designs offer, among other things, the added benefit of easier break upon retrieval from native substrate in micro assembly processes. In certain embodiments, narrow tether designs are used to avoid pinning of the undercut etch front.
An inorganic light-emitting diode display with integrated electrodes includes a display surface having a display area and a plurality of spatially separated light-emitting diodes (such as inorganic light-emitting diodes) disposed in rows on the display surface in the display area. The inorganic light-emitting diodes in each row of inorganic light-emitting diodes are electrically connected by one or more electrical conductors. One or more row touch electrodes are disposed in rows over the display surface in the display area between the rows of inorganic light-emitting diodes and are disposed on the display surface and have a width that is larger than a length and width of the light-emitting diodes. A display with an integrated touch screen includes one or more sensing elements disposed in a common plane with the light emitters or on a side of the light emitters opposite the display surface.
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
94.
MULTI-JUNCTION PHOTOVOLTAIC MICRO-CELL ARCHITECTURES FOR ENERGY HARVESTING AND/OR LASER POWER CONVERSION
An optical power converter device includes a light source configured to emit monochromatic light, and a multi-junction photovoltaic cell including respective photovoltaic cell layers having different bandgaps and/or thicknesses. The respective photovoltaic cell layers are electrically connected to collectively provide an output voltage and are vertically stacked relative to a surface of the multi-junction photovoltaic cell that is arranged for illumination by the monochromatic light from the light source. Responsive to the illumination of the surface by the monochromatic light from the light source, the respective photovoltaic cell layers are configured to generate respective output photocurrents that are substantially equal. Related devices and methods of operation are also discussed.
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
H01L 31/042 - PV modules or arrays of single PV cells
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
95.
LAYERS OF SAFETY & FAILSAFE CAPABILITY FOR OPERATION OF CLASS IV LASER IN CONSUMER ELECTRONICS DEVICES
An optical power transfer device includes a transmitter circuit, including a laser light source that is configured to emit coherent light responsive to operation above a lasing threshold, and is configured to emit incoherent light responsive operation below the lasing threshold. A proximity sensor circuit is coupled to the transmitter circuit and is configured to output a detection signal therefrom responsive to authentication of an optical receiver including at least one photovoltaic cell having surface area of about 4 square millimeters or less within a proximity thereof. The transmitter circuit is configured to operate the laser light source below the lasing threshold to emit the incoherent light responsive to an absence of the detection signal from the proximity sensor circuit. Related devices and methods of operation are also discussed.
An optical data communication and power converter device includes a receiver circuit comprising an optical receiver. The optical receiver includes a photovoltaic device and a photoconductive device arranged within an area that is configured for illumination by a modulated optical signal emitted from a monochromatic light source of a transmitter circuit. The photovoltaic device is configured to generate electric current responsive to the illumination of the area by the modulated optical signal. The photoconductive device is configured to generate a data signal, distinct from the electric current, responsive to the illumination of the area by the modulated optical signal. A reverse bias voltage may be applied to the photoconductive device by the photovoltaic device, independent of an external voltage source. Related devices and methods of operation are also discussed.
A reflective display includes an array of reflective pixels in or beneath a display viewing area for viewing electronically displayed information. A layer is located on or over the display viewing area through which the display viewing area is viewed and a plurality of micro-LEDs is located on the layer in the display viewing area and arranged to emit light toward the display viewing area. A plurality of conductors is located on the layer and the conductors are electrically connected to the micro-LEDs. A controller is connected to the conductors to control the micro- LEDs to emit light illuminating the display viewing area.
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro- transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Machines for integrating microscale devices or integrated circuits onto non-native substrates; machines for printing microscale devices onto non-native substrates; micro transfer printers. Light emitting diode (LED) displays; LED modules, namely, an assembly of LEDs, for use in lighting and displays; digital display panels; computer memory devices; optical communications systems comprised of optical and electronic hardware and computer software for the transmission of data between two points. Printing; micro transfer printing services; printing services, namely, printing microscale devices or integrated circuits onto non-native substrates; treatment of materials, namely, affixing and embedding product authentication security devices and materials in a wide variety of products and documents to protect against counterfeiting, tampering, and diversion, and to ensure the integrity of genuine products and documents. Design of machines for integrating microscale devices or integrative circuits onto non-native substrates; design of machines for printing microscale devices onto non-native substrates; design of micro transfer printers for others; Encoding identification information on valuable documents and products.
100.
METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT
A method for producing a plurality of semiconductor components is provided, wherein a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer and an active region is applied on a substrate. A contact structure is formed for electrically contacting the first and the second semiconductor layers. An auxiliary substrate is applied on the semiconductor layer sequence, so that the semiconductor layer sequence is arranged between the auxiliary substrate and the substrate. In a subsequent step, the substrate is removed from the semiconductor layer sequence. The semiconductor layer sequence is structured into a plurality of semiconductor bodies by forming at least one trench separating the semiconductor bodies. An anchoring layer is formed to cover the trench and vertical surfaces of the semiconductor bodies. A plurality of tethers is formed by structuring the anchoring layer in regions covering the trench. The auxiliary substrate is locally detached from the semiconductor bodies, wherein the tethers remain attached to the auxiliary substrate. At least one semiconductor body is selectively picked up by separating the tethers from the auxiliary substrate. Moreover, a semiconductor component produced by said method is provided.
