The present disclosure relates to the chemical binding of surface polymers to epoxy materials. More specifically, the present disclosure relates to the adhesion of an epoxy material to a substrate by bonding of functional groups present in a surface polymer formed on a substrate to functional groups present in the epoxy material.
C08F 120/32 - Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
A device includes: a first substrate; a second substrate; interconnects bonding the first substrate to the second substrate; and a polymer brush-based underfill layer in a gap between the first substrate and the second substrate. A method includes: attaching initiator molecules to one or more surfaces in a gap between a first substrate and a second substrate of a bonded structure, where the first substrate and the second substrate are bonded by interconnects; growing polymer chains from the initiator molecules; and annealing the bonded structure to form an underfill layer from the polymer chains in the gap.
Disclosed herein are surface polymers on substrate surfaces, the surface polymers being composed of at least two polymer molecules, and methods of forming the same. These surface polymers may be formed on a substrate surface by forming first polymer molecules from first polymerization initiators attached to the surface of the substrate, and subsequently forming second polymer molecules from second polymerization initiation sites on the first polymer molecules.
A device includes: a first substrate; a second substrate; interconnects bonding the first substrate to the second substrate; and a polymer brush-based underfill layer in a gap between the first substrate and the second substrate. A method includes: attaching initiator molecules to one or more surfaces in a gap between a first substrate and a second substrate of a bonded structure, where the first substrate and the second substrate are bonded by interconnects; growing polymer chains from the initiator molecules; and annealing the bonded structure to form an underfill layer from the polymer chains in the gap.
An apparatus that includes a holder body configured to hold a substrate at edge portions of the substrate. The holder body includes a first layer and a second layer parallel to the first layer, forming a slot between the two layers to receive the substrate. The apparatus further includes one or more detent rotational locking mechanisms attached to the holder body. The apparatus further includes one or more bar leaves positioned within the slot and attached to the one or more detent rotational locking mechanisms. The one or more detent rotational locking mechanisms are configured to provide a clamping force to hold the substrate positioned between the one or more bar leaves and the holder body.
C08F 120/20 - Esters of polyhydric alcohols or phenols
C08F 120/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
8.
HIGH TEMPERATURE ANNEALING OF SEMICONDUCTOR SUBSTRATES
An annealing system for a semiconductor substrate includes a process chamber having a central axis and one or more process zones. A carrier positioned in the process chamber may be configured to support the substrate during processing. One or more induction heaters may be positioned in the process chamber to heat the substrate during processing. The system may also include a removable cap with a heat shield. The cap may be configured to be inserted and removed from the process chamber through an opening on the process chamber wall. When the cap is used it may be coupled to the process chamber such that its heat shield is disposed above the substrate positioned on the carrier.
An annealing system for semiconductor substrates includes a process chamber with multiple angularly arranged zones. A carrier rotates substrates between a first and second zone. An induction heater in the first zone heats the substrate, while a heat shield above the substrate, composed of thermally insulating material, controls temperature. The shield has a crown and rim, with one or more resistive heaters to adjust the rim's temperature relative to the temperature of the crown for improving uniformity of substrate temperature.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
10.
HIGH TEMPERATURE ANNEALING OF SEMICONDUCTOR SUBSTRATES
An annealing system for a semiconductor substrate includes a process chamber having a central axis and one or more process zones. A carrier positioned in the process chamber may be configured to support the substrate during processing. One or more induction heaters may be positioned in the process chamber to heat the substrate during processing. The system may also include a removable cap with a heat shield. The cap may be configured to be inserted and removed from the process chamber through an opening on the process chamber wall. When the cap is used it may be coupled to the process chamber such that its heat shield is disposed above the substrate positioned on the carrier.
An apparatus to remove at least a portion of a coating from a coated surface of a substrate may include a nozzle assembly and one or more nozzle-heads. Each nozzle-head may include at least one nozzle tip and a cavity configured to receive a portion of the coated surface of the substrate. The nozzle tip may be configured to direct an angled stream of an etchant on the substrate as the nozzle assembly moves along the length of the substrate. One or more sensors may measure a warpage of the substrate along the length of the substrate, and a controller may move the nozzle-head orthogonal to the direction of nozzle-head movement based on the measured warpage.
An apparatus to remove a coating from an edge of a substrate includes a vacuum chuck assembly and a nozzle assembly. The vacuum chuck assembly is configured to support the substrate using suction. The nozzle assembly includes a nozzle head with a pair of nozzle tips configured to direct an angled liquid stream on a surface of the substrate. An annular duct around each nozzle tip discharges a pressurized gas to form a gas shroud around the angled liquid stream.
B05B 7/06 - Spray pistolsApparatus for discharge with one outlet orifice surrounding another approximately in the same plane
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/30 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
B23Q 3/08 - Work-clamping means other than mechanically-actuated
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An apparatus to remove a coating from an edge of a substrate includes a vacuum chuck assembly and a nozzle assembly. The vacuum chuck assembly is configured to support the substrate using suction. The nozzle assembly includes a nozzle head with a pair of nozzle tips configured to direct an angled liquid stream on a surface of the substrate. An annular duct around each nozzle tip discharges a pressurized gas to form a gas shroud around the angled liquid stream.
B24C 1/04 - Methods for use of abrasive blasting for producing particular effectsUse of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass
B24C 1/08 - Methods for use of abrasive blasting for producing particular effectsUse of auxiliary equipment in connection with such methods for polishing surfaces, e.g. by making use of liquid-borne abrasives
B24C 3/32 - Abrasive blasting machines or devicesPlants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
An apparatus to remove at least a portion of a coating from a coated surface of a substrate may include a nozzle assembly and one or more nozzle-heads. Each nozzle-head may include at least one nozzle tip and a cavity configured to receive a portion of the coated surface of the substrate. The nozzle tip may be configured to direct an angled stream of an etchant on the substrate as the nozzle assembly moves along the length of the substrate. One or more sensors may measure a warpage of the substrate along the length of the substrate, and a controller may move the nozzle-head orthogonal to the direction of nozzle-head movement based on the measured warpage.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B05B 12/18 - Arrangements for controlling deliveryArrangements for controlling the spray area for controlling the spray area using fluids, e.g. gas streams
B05B 7/06 - Spray pistolsApparatus for discharge with one outlet orifice surrounding another approximately in the same plane
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A solder reflow system that includes a vacuum chamber and a sample chuck in the vacuum chamber to support a semiconductor wafer to be processed. The solder reflow system further include a heating element coupled to the vacuum chamber and configured to heat the semiconductor wafer, a thermocouple connected to the sample chuck to measure a temperature of the semiconductor wafer, a pyrometer positioned to detect an optical signal from the semiconductor wafer to estimate the temperature of the semiconductor wafer. The control system is configured to control the heating element to heat the semiconductor wafer, obtain one or more measurements of the temperature of the semiconductor wafer from the thermocouple and one or more estimates of the temperature of the semiconductor wafer from the pyrometer during the heating of the semiconductor wafer, and determine a modification of the heating of the semiconductor wafer based on the obtained measurements.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/66 - Testing or measuring during manufacture or treatment
A batch processing oven includes a processing chamber, a magnet, and a rack. The processing chamber includes a gas inlet on a first side and a gas outlet on a second side opposite the first side, the gas inlet is configured to direct a hot gas into the processing chamber and the gas outlet is configured to exhaust the convective energy in parallel with the radiative energy from the walls. The magnet is arranged such that its north pole will be formed on the first side of the processing chamber and its south pole will be formed on the second side of the processing chamber. The rack is configured to be positioned between the first and second ends of the processing chamber and is configured to support a plurality of vertically spaced-apart substrates.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
17.
CONTROL OF SURFACE POLYMERIZATION RATE BY FORMULATION OF REACTION COMPOSITIONS
Methods for controlling polymerization rate in relation to the formation of surface polymers on a substrate as well as systems for carrying out the methods are disclosed herein. The formulation of reaction compositions so as to provide a controlled rate of surface polymerization are disclosed.
C08F 120/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
C08F 120/32 - Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
C08F 2/38 - Polymerisation using regulators, e.g. chain terminating agents
C08F 4/10 - Metallic compounds other than hydrides and other than metallo-organic compoundsBoron halide or aluminium halide complexes with organic compounds containing oxygen of alkaline earth metals, zinc, cadmium, mercury, copper, or silver
A wet etching system includes a process tank having an inclined tank floor. A drain port is provided at the lower-most location of the inclined tank floor and one or more outlet ports are provided on the inclined tank floor at a location higher than the drain port. The drain port is configured to drain etchant from the tank through a debris-removal system, and the outlet ports are configured to drain the etchant from the tank through a recirculation system.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
19.
SELF-ALIGNMENT FOR BONDING OF SEMICONDUCTOR DEVICES
A method of bonding semiconductor devices utilizing self-alignment. A pair of device features metallic bumps that protrude through their respective dielectric layers, exposing the end surfaces of the bumps. Solder is applied to these exposed surfaces, and the devices are aligned so that the solder on the first device comes into contact with the solder on the second device. During reflow, surface tension forces of the molten solder self-aligns the devices. After reflow, exposed surfaces of the dielectric layers of the two devices are bonded together.
The present disclosure relates to the depositing of metals on and within surface polymer films that are covalently bonded to the substrate comprised in a device structure and to the electroless deposition of metals on such surface polymer films.
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by reduction or substitution, i.e. electroless plating
C23C 18/20 - Pretreatment of the material to be coated of organic surfaces, e.g. resins
A substrate cleaning device includes a double-sided scrubber that directs a liquid to a substrate as it moves back-and-forth between a pair of rotating brushes. The device may also include a first set of nozzles and a second set of nozzles. The first set of nozzles may be configured to spray a first liquid at an interface between the substrate and rotating brushes and the second set of nozzles may be configured to spray a second liquid at the interface as the substrate moves back-and-forth between the pair of rotating brushes.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A cleaning apparatus incudes a plurality of tubes with angled orifices. An angled liquid stream is directed through the orifices to impinge on a surface of a substrate and clean the surface as the substrate moves in one direction through the space between a pair of tubes. An angled gas stream is then directed through the orifices to impinge on the surface of the substrate and dry the surface as the substrate moves in the opposite direction between the pair of tubes.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B05B 7/08 - Spray pistolsApparatus for discharge with separate outlet orifices, e.g. to form parallel jets, to form intersecting jets
B08B 5/02 - Cleaning by the force of jets, e.g. blowing-out cavities
B08B 9/053 - Cleaning the internal surfacesRemoval of blockages using cleaning devices introduced into and moved along the pipes moved along the pipes by a fluid, e.g. by fluid pressure or by suction
B05B 1/04 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops in flat form, e.g. fan-like, sheet-like
D06L 1/20 - Dry-cleaning or washing fibres, filaments, threads, yarns, fabrics, feathers or made-up fibrous goods using aqueous solvents combined with mechanical means
23.
UNIFIED RINSE AND DRY CLEANING APPARATUS AND METHODS
A cleaning apparatus incudes a plurality of tubes with angled orifices. An angled liquid stream is directed through the orifices to impinge on a surface of a substrate and clean the surface as the substrate moves in one direction through the space between a pair of tubes. An angled gas stream is then directed through the orifices to impinge on the surface of the substrate and dry the surface as the substrate moves in the opposite direction between the pair of tubes.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B05B 1/14 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openingsNozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with strainers in or outside the outlet opening
A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.
An apparatus for removing a coating from a substrate comprises a nozzle with an inner conduit having an orifice and an outer conduit coaxially arranged about the inner conduit and defining an annular opening between the inner and outer conduits. The nozzle is configured to direct a liquid stream through the orifice toward the coated surface and direct a gas flow through the annular opening such that the gas flow surrounds the liquid stream as the liquid stream moves towards the coated surface.
B24C 1/08 - Methods for use of abrasive blasting for producing particular effectsUse of auxiliary equipment in connection with such methods for polishing surfaces, e.g. by making use of liquid-borne abrasives
B05B 7/06 - Spray pistolsApparatus for discharge with one outlet orifice surrounding another approximately in the same plane
B05B 12/18 - Arrangements for controlling deliveryArrangements for controlling the spray area for controlling the spray area using fluids, e.g. gas streams
An oven with a processing chamber having an adjustable enclosed volume that is configured to support a substrate and includes a lamp assembly configured to heat the substrate. The oven also includes a sealing door that bounds one end of the processing chamber. The sealing door is configured to be moved from a first position to a second position to change the enclosed volume of the processing chamber from a first volume to a second volume.
A vaporizer apparatus includes a liquid inlet; a plurality of plates in a stacked arrangement and configured with openings and surfaces defining a tortuous path for a liquid through the plurality of plates; an atomizer configured to atomize liquid from the liquid inlet and inject a spray of the liquid toward a first plate of the plurality of plates, wherein the plurality of plates is configured to direct a flow of the liquid through the tortuous path from a first end corresponding to the first plate and output a vapor of the liquid at a second end of the tortuous path corresponding to a last plate of the plurality of plates; and at least one heating element configured to heat the plurality of plates to vaporize the liquid along its flow through the tortuous path and generate the vapor.
A method of improving interfacial adhesion of a copper-glass interface in a Through Glass Via (TGV) of an electronic device includes coating an internal wall of the TGV with a curable polymer material having a viscosity in its liquid phase less than 40 Poise. The coating is then cured to form a dielectric liner having a tensile strength greater than about 5 Mpa. After curing, a copper coating is applied on the dielectric liner.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
A method of improving interfacial adhesion of a copper-glass interface in a Through Glass Via (TGV) of an electronic device includes coating an internal wall of a TGV with a curable polymer material having a viscosity less than 30 Poise. The coating is cured to form a dielectric liner having a tensile strength greater than about 8 Mpa and a dielectric loss less than about 0.002. A layer of copper may then be deposited on the dielectric liner.
C25D 3/38 - ElectroplatingBaths therefor from solutions of copper
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
Reaction compositions for surface polymer formation may comprise: at least one monomer; at least one ligand and at least one catalyst, wherein the at least one ligand and the at least one catalyst form a complex; at least one solvent; and at least one polymerization control agent for controlling at least one of pH and molecular oxygen concentration. Systems and methods are described which utilize these reaction compositions for forming surface polymers.
C08F 2/01 - Processes of polymerisation characterised by special features of the polymerisation apparatus used
C08F 293/00 - Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
C08J 7/16 - Chemical modification with polymerisable compounds
31.
MULTIFUNCTIONAL COMPOSITE SI AND C-BASED PARTICLES
The present disclosure provides methods for forming polymer brushes on Si and C-based - particles, thus, enabling easy large-scale production of polymer brush decorated particles. In particular, the improved methods allow for easy control of the graft-density due to the formation of a multifunctional layer on the particles. The disclosure also provides a Si and C-based - particle having a multifunctional base layer as well as a Si and C-based particle having a multifunctional base layer upon which polymer brushes are formed.
09 - Scientific and electric apparatus and instruments
Goods & Services
Semiconductor manufacturing machines; cleaning machines,
namely, machines for removing impurities and descumming
residues from silicon wafers; stripping machines, namely,
machines for stripping photoresist layers from silicon
wafers; plasma cleaning machines, namely, machines using
plasma to remove impurities and descum residues from silicon
wafers; coating machines, namely, monolayer thin film
coating machines for applying thin films to silicon wafers,
micro-electro-mechanical systems, optical glass, and
biomedical devices; chemical vapor deposition machines for
applying thin films to silicon wafers,
micro-electro-mechanical systems, optical glass, and
biomedical devices; vacuum curing machines, namely, machines
with vacuum chambers for curing and degassing semiconductor
wafers; annealing machines, namely, machines with vacuum
chambers for altering physical and chemical properties of
metal, for use in the manufacture of semiconductors; bonding
machines, namely, thin film coating machines for applying
adhesive films between silicon wafers. Chemical vapor deposition equipment, namely, chemical vapor
deposition apparatus for use in research.
A substrate cleaning device includes a double-sided scrubber that directs a liquid to a substrate as it moves back-and-forth between a pair of rotating brushes. The device may also include a first set of nozzles and a second set of nozzles. The first set of nozzles may be configured to spray a first liquid at an interface between the substrate and rotating brushes and the second set of nozzles may be configured to spray a second liquid at the interface as the substrate moves back-and-forth between the pair of rotating brushes.
B08B 1/20 - Cleaning of moving articles, e.g. of moving webs or of objects on a conveyor
B08B 1/32 - Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
B08B 3/02 - Cleaning by the force of jets or sprays
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A substrate cleaning device includes a double-sided scrubber that directs a liquid to a substrate as it moves back-and-forth between a pair of rotating brushes. The device may also include a first set of nozzles and a second set of nozzles. The first set of nozzles may be configured to spray a first liquid at an interface between the substrate and rotating brushes and the second set of nozzles may be configured to spray a second liquid at the interface as the substrate moves back-and-forth between the pair of rotating brushes.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B08B 1/34 - Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis parallel to the surface
B08B 3/00 - Cleaning by methods involving the use or presence of liquid or steam
A system and a method of wet processing includes receiving real-time signals indicative of one or more of a pH, a temperature, and an electrical conductivity of a liquid chemical in a wet processing tank, and determining values of one or more of a composition, a flow rate, and the temperature of the liquid chemical that will improve or maintain an etch rate of the liquid chemical in the wet processing tank. One or more of the composition, the flow rate, and the temperature of the liquid chemical in the wet processing tank may then be adjusted to the determined values.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A system and a method of wet processing includes receiving real-time signals indicative of one or more of a pH, a temperature, and an electrical conductivity of a liquid chemical in a wet processing tank, and determining values of one or more of a composition, a flow rate, and the temperature of the liquid chemical that will improve or maintain an etch rate of the liquid chemical in the wet processing tank. One or more of the composition, the flow rate, and the temperature of the liquid chemical in the wet processing tank may then be adjusted to the determined values.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
A carrier configured to support multiple panels includes a housing having a pair of opposing sidewalls extending in a first direction and a plurality of trays stacked between the pair of opposing sidewalls in the first direction. A lid is slidably coupled to the pair of opposing sidewalls and configured to be slid on the housing between an open configuration and a closed configuration. The plurality of trays are supported in the housing such that, in the closed configuration of the lid, two trays of the plurality of trays are blocked from moving relative to one another in the first direction, and in the open configuration of the lid, the two trays are configured to be moved relative to one another in the first direction.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
B65D 43/12 - Removable lids or covers guided for removal by sliding
B65D 85/48 - Containers, packaging elements or packages, specially adapted for particular articles or materials for articles particularly sensitive to damage by shock or pressure for glass sheets
A carrier configured to support multiple panels includes a housing having a pair of opposing sidewalls extending in a first direction and a plurality of trays stacked between the pair of opposing sidewalls in the first direction. A lid is slidably coupled to the pair of opposing sidewalls and configured to be slid on the housing between an open configuration and a closed configuration. The plurality of trays are supported in the housing such that, in the closed configuration of the lid, two trays of the plurality of trays are blocked from moving relative to one another in the first direction, and in the open configuration of the lid, the two trays are configured to be moved relative to one another in the first direction.
B65G 1/10 - Storage devices mechanical with relatively-movable racks to facilitate insertion or removal of articles
B65G 49/06 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B65D 85/48 - Containers, packaging elements or packages, specially adapted for particular articles or materials for articles particularly sensitive to damage by shock or pressure for glass sheets
B65D 81/05 - Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents specially adapted to protect contents from mechanical damage maintaining contents at spaced relation from package walls, or from other contents
G11B 33/04 - CabinetsCasesStandsDisposition of apparatus therein or thereon modified to store record carriers
40.
IMPROVED ADHESION STRENGTH OF METAL-ORGANIC INTERFACES IN ELECTRONIC DEVICES
A method of improving the adhesion of a metal-organic interface in an electronic device includes providing a substrate with a metal structure, treating a surface of the metal structure to form a monolayer coating of a selected chemical composition on the surface, and coating the treated surface with an organic material.
H05K 3/14 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
An apparatus for wet chemical processing includes a processing tank that configured to contain a liquid chemical composition and support a plurality of substrates in the liquid chemical composition. A flow plate may be disposed in the processing tank below the plurality of substrates. The flow plate may include a plurality of liquid nozzles configured to direct the liquid chemical composition into the tank and a plurality of gas outlets configured to direct a gas into the tank.
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
B05B 7/12 - Spray pistolsApparatus for discharge designed to control volume of flow, e.g. with adjustable passages
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by reduction or substitution, i.e. electroless plating
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 22/73 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals characterised by the process
An apparatus for wet chemical processing includes a processing tank that configured to contain a liquid chemical composition and support a plurality of substrates in the liquid chemical composition. A flow plate may be disposed in the processing tank below the plurality of substrates. The flow plate may include a plurality of liquid nozzles configured to direct the liquid chemical composition into the tank and a plurality of gas outlets configured to direct a gas into the tank.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by reduction or substitution, i.e. electroless plating
C23C 18/40 - Coating with copper using reducing agents
An apparatus for removing a coating from a substrate comprises a nozzle with an inner conduit having an orifice and an outer conduit coaxially arranged about the inner conduit and defining an annular opening between the inner and outer conduits. The nozzle is configured to direct a liquid stream through the orifice toward the coated surface and direct a gas flow through the annular opening such that the gas flow surrounds the liquid stream as the liquid stream moves towards the coated surface.
B24C 1/08 - Methods for use of abrasive blasting for producing particular effectsUse of auxiliary equipment in connection with such methods for polishing surfaces, e.g. by making use of liquid-borne abrasives
B05B 7/06 - Spray pistolsApparatus for discharge with one outlet orifice surrounding another approximately in the same plane
B05B 12/18 - Arrangements for controlling deliveryArrangements for controlling the spray area for controlling the spray area using fluids, e.g. gas streams
An apparatus to separate a wafer from a pre-sliced boule of wafers may include a conveyor configured to move the pre-sliced boule of wafers from a first end to a second end. A lift yoke, positioned proximate the second end, may include a wafer slot configured to receive a first wafer of the pre-sliced boule therein when the pre-sliced boule is positioned at the second end. A pusher blade may be configured to raise the lift yoke along with the first wafer positioned in its wafer slot from a first position to a second position. The wafer slot may be vertically aligned with the conveyor at the first position and the wafer slot may be positioned above the conveyor in the second position.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
An apparatus to separate a wafer from a pre-sliced boule of wafers may include a conveyor configured to move the pre-sliced boule of wafers from a first end to a second end. A lift yoke, positioned proximate the second end, may include a wafer slot configured to receive a first wafer of the pre-sliced boule therein when the pre-sliced boule is positioned at the second end. A pusher blade may be configured to raise the lift yoke along with the first wafer positioned in its wafer slot from a first position to a second position. The wafer slot may be vertically aligned with the conveyor at the first position and the wafer slot may be positioned above the conveyor in the second position.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B65G 47/34 - Devices for discharging articles or materials from conveyors
B65G 47/82 - Rotary or reciprocating members for direct action on articles or materials, e.g. pushers, rakes, shovels
B65G 47/88 - Separating or stopping elements, e.g. fingers
B65G 15/12 - Conveyors having endless load-conveying surfaces, i.e. belts and like continuous members, to which tractive effort is transmitted by means other than endless driving elements of similar configuration comprising two or more co-operating endless surfaces with parallel longitudinal axes, or a multiplicity of parallel elements, e.g. ropes defining an endless surface with two or more endless belts
46.
ELECTRONIC DEVICE WITH IMPROVED INTERFACIAL ADHESION OF METAL-ORGANIC INTERFACES
An electronic device having a substrate with a metal structure, a mono-layer coating of a selected silane composition on a surface of the metal structure, and an organic layer on the mono-layer coating, wherein the mono-layer coating improves the interfacial adhesion strength between the metal surface and the organic material.
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
H05K 3/14 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material
A method of improving interfacial adhesion of a copper-glass interface in a Through Glass Via (TGV) of an electronic device includes coating an internal wall of a TGV with a curable polymer material having a viscosity less than 30 Poise. The coating is cured to form a dielectric liner having a tensile strength greater than about 8 Mpa and a dielectric loss less than about 0.002. A layer of copper may then be deposited on the dielectric liner.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
Semiconductor manufacturing machines; Cleaning machines, namely, machines for removing impurities and descumming residues from silicon wafers; Stripping machines, namely, machines for stripping photoresist layers from silicon wafers; Plasma cleaning machines, namely, machines using plasma to remove impurities and descum residues from silicon wafers; Coating machines, namely, monolayer thin film coating machines for applying thin films to silicon wafers, micro-electro-mechanical systems, optical glass, and biomedical devices; Chemical vapor deposition machines for applying thin films to silicon wafers, micro-electro-mechanical systems, optical glass, and biomedical devices; Vacuum curing machines, namely, machines with vacuum chambers for curing and degassing semiconductor wafers; Annealing machines, namely, machines with vacuum chambers for altering physical and chemical properties of metal, for use in the manufacture of semiconductors; Bonding machines, namely, thin film coating machines for applying adhesive films between silicon wafers
A cleaning device includes a tank configured to contain a cleaning liquid and one or more substrates in the cleaning liquid. A megasonic transducer array is coupled to the tank and configured to direct megasonic frequency waves to surfaces of the substrates. Multiple pairs of ultrasonic transducers are also coupled to the tank and configured to direct ultrasonic frequency waves to surfaces of the substrates. The megasonic transducer array includes a support plate with a plurality of megasonic transducers and a central plane that extends perpendicular to the support plate. The multiple pairs of ultrasonic transducers are arranged in a mirror symmetric manner on opposite sides of the central plane.
B08B 3/12 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
51.
Method of improving the adhesion strength of metal-organic interfaces in electronic devices
A method of improving the adhesion of a metal-organic interface in an electronic device includes providing a substrate with a metal structure, treating a surface of the metal structure to form a monolayer coating of a selected chemical composition on the surface, and coating the treated surface with an organic material.
B05D 1/00 - Processes for applying liquids or other fluent materials
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.
The present invention relates to novel chemical solutions suitable for forming polymer brushes on a surface of a solid part. The present invention further relates to methods of forming polymer brushes on the surface of a solid part using the novel chemical solutions as well as solid parts having polymer brushes coated onto the surface and uses of such solid parts.
C08F 293/00 - Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
C08F 4/10 - Metallic compounds other than hydrides and other than metallo-organic compoundsBoron halide or aluminium halide complexes with organic compounds containing oxygen of alkaline earth metals, zinc, cadmium, mercury, copper, or silver
C08F 4/26 - Metallic compounds other than hydrides and other than metallo-organic compoundsBoron halide or aluminium halide complexes with organic compounds containing oxygen of manganese, iron group metals, or platinum group metals
C08F 292/00 - Macromolecular compounds obtained by polymerising monomers on to inorganic materials
A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.
Curing machines, namely, vacuum curing machines for
manufacturing semiconductors, microelectromechanical systems
(MEMS), and medical devices; curing equipment for use in the
manufacture of semiconductors, micro-electro-mechanical
systems, optical lenses, fiber-optics, medical devices, and
DNA sequencing devices.
The present invention relates to the use of polymer gels in the preparation of polymer brushes. In particular, the present invention relates to polymer gels swelled in the polymerisation medium. The invention further relates to the use of polymer gels in the formation of polymer brushes on a surface. The present invention provides improved methods for forming polymer brushes on a surface, thus, enabling easy large-scale production of polymer brush-coated surfaces. In particular, the present invention enables application of the polymerisation medium on surfaces of all geometries.
C08F 292/00 - Macromolecular compounds obtained by polymerising monomers on to inorganic materials
C08F 275/00 - Macromolecular compounds obtained by polymerising monomers on to polymers of monomers containing phosphorus, selenium, tellurium, or a metal as defined in group
C08F 289/00 - Macromolecular compounds obtained by polymerising monomers on to macromolecular compounds not provided for in groups
09 - Scientific and electric apparatus and instruments
Goods & Services
Semiconductor manufacturing machines. Hardware, controls, computer hardware, and computer software
equipment used for semiconductor manufacturing; electric and
electronic components, chips, wafers, hardware, computer
hardware, computer software, and controls for semiconductor
manufacturing.
A batch processing oven includes a processing chamber configured to support multiple device-holding panels disposed one above another. Each device-holding panel of the multiple device-holding panels is configured to support one or more semiconductor wafers or devices. A plurality of thermal plates is positioned in the processing chamber. The plurality of thermal plates are disposed one above another with a gap between adjacently positioned thermal plates. At least one device-holding panel of the multiple device-holding panels is disposed between, and spaced apart from, a pair of adjacently positioned thermal plates. A first gas port is configured to direct a first gas into the processing chamber, and a second gas port is configured to direct a second gas into the processing chamber.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to novel chemical solutions suitable for forming polymer brushes on a surface of a solid part. The present invention further relates to methods of forming polymer brushes on the surface of a solid part using the novel chemical solutions as well as solid parts having polymer brushes coated onto the surface and uses of such solid parts.
C08F 293/00 - Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
C08F 4/10 - Metallic compounds other than hydrides and other than metallo-organic compoundsBoron halide or aluminium halide complexes with organic compounds containing oxygen of alkaline earth metals, zinc, cadmium, mercury, copper, or silver
C08F 4/26 - Metallic compounds other than hydrides and other than metallo-organic compoundsBoron halide or aluminium halide complexes with organic compounds containing oxygen of manganese, iron group metals, or platinum group metals
C08F 292/00 - Macromolecular compounds obtained by polymerising monomers on to inorganic materials
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Chemical treatment of plastics; Chemical treatment of metals; treatment and processing of plastic; treatment of materials using chemicals; treatment and coating of metal surfaces. Science and technology services, research and design in connection herewith.
67.
SYSTEM FOR TRAPPING POLYMER VAPORS IN PROCESS OVEN VACUUM SYSTEMS
A trap system adapted to trap polyimide or other vapors exiting from a process chamber. The vapors are routed from the process chamber through a heated exit line at low pressure and then cooled, resulting in condensation at a selected location. The condensed vapors accumulate in a liquid trap. A method of condensing polymer vapors in vacuum exit lines of process chambers, where the flow which may have vaporized polymer vapor is cooled to enhance condensation at a chosen location. The liquid trap can be emptied and replaced, resulting in the removal of the condensed liquid. The chamber exit lines are protected from condensation build up.
B01D 5/00 - Condensation of vapoursRecovering volatile solvents by condensation
B01D 47/02 - Separating dispersed particles from gases, air or vapours by liquid as separating agent by passing the gas or air or vapour over or through a liquid bath
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The present invention relates to alternative methods of joining a solid part (1) and a polymer (2). The methods comprise attaching a primer layer (4) with a predetermined surface chemistry, density and thickness covalently to at least a part of a surface (3) of the solid part (1). Some embodiments of the invention further comprise polymerizing second molecules onto the primer layer (4) so that the surface (3) is at least partly covered with surface immobilized polymer brushes (8). The surface (3) of the solid part (1) is brought into contact with the polymer (2) and a predetermined temperature profile is applied resulting in covalent bonds (6) being established between the polymer (2) and the primer (4), and/or polymer brushes (8) melting or softening and entangling with melted or softened polymer (2) so that the solid part (1) and the polymer (2) remain joined after cooling. The obtained strength of the bonding between the solid part (1) and the polymer (2) is significantly higher than if the same materials are joined with conventional methods not comprising the establishment of a primer layer (4).
F04D 13/06 - Units comprising pumps and their driving means the pump being electrically driven
B29C 65/48 - Joining of preformed partsApparatus therefor using adhesives
C08J 5/06 - Reinforcing macromolecular compounds with loose or coherent fibrous material using pretreated fibrous materials
B29C 45/14 - Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mouldApparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
