Abstract

A method for measuring the attenuation coefficient of a scattering and/or absorbing part of a body using diffuse reflectance spectroscopy. The method includes emitting optical radiation, the intensity and/or the optical frequency of which are modulated, with at least part of the optical radiation, called a probe signal, irradiating the body; receiving part of the probe signal, called a backscattered signal, that is scattered and reflected by the body and measuring the path length of the backscattered signal; measuring the reflectance of the part of the body traversed by the backscattered signal; and computing the attenuation coefficient based on the measured path length and on the reflectance.

IPC Classes  ?

• G01N 21/47 - Scattering, i.e. diffuse reflection

Abstract

A device for sequencing at least one nucleotide strand including a support, at least one portion movable relative to the support, means for setting the movable portion in vibration at a given frequency, means for measuring the vibration frequency of the movable portion, and a recognition probe mechanically connecting the support and the movable portion, the recognition probe including at least one nucleotide sequence.

IPC Classes  ?

• C12Q 1/6874 - Methods for sequencing involving nucleic acid arrays, e.g. sequencing by hybridisation [SBH]

Abstract

The invention relates to a set of luminescent light concentrators for wide-spectrum emission, the set being intended to be pumped by pump radiation having a pump wavelength and comprising: - a first luminescent light concentrator (C1), the first concentrator being made of a first material suitable for absorbing the pump radiation and then emitting first luminescent radiation (L1) having a first central emission wavelength within the first concentrator, - a second luminescent light concentrator, contiguous to the first concentrator, made of a second material suitable for absorbing the pump radiation and then emitting second luminescent radiation (L2) having a second central emission wavelength longer than the first wavelength within the second concentrator, - a third luminescent light concentrator, contiguous to the second concentrator, made of a third material suitable for absorbing the pump radiation and then emitting third luminescent radiation (L3) having a third central emission wavelength longer than the second wavelength within the third concentrator, such that the set of concentrators is suitable for emitting, through a first exit face, an output light emission containing the first, second and third central emission wavelengths and formed from a portion of each of the first luminescent radiation, second luminescent radiation and third luminescent radiation when the first, second and third luminescent light concentrators all absorb the pump radiation.

IPC Classes  ?

• F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
• F21K 9/61 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using light guides
• F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
• F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
• F21V 9/38 - Combination of two or more photoluminescent elements of different materials
• G03B 21/20 - Lamp housings
• G02B 19/00 - Condensers
• H01S 3/04 - Arrangements for thermal management
• H01S 3/08 - Construction or shape of optical resonators or components thereof
• H01S 3/094 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light

Abstract

The invention relates to an electronic device comprising: - a functional zone (C1) comprising a cryogenic component configured to operate at a temperature below 10 K, - a control zone (C2) comprising an electronic control component configured to control the cryogenic component, - a passive zone (C3) comprising a passive structure (22) electrically connected to the cryogenic component and to the electronic control component, the passive structure (22) being based on a superconducting material and integrated into a dielectric matrix (13). Advantageously, the dielectric matrix (13) comprises a cavity (52) around the passive structure (22), so that the passive structure (22) is partially suspended in the cavity (52).

IPC Classes  ?

• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
• H05K 3/46 - Manufacturing multi-layer circuits
• G06N 10/00 - Quantum computing, i.e. information processing based on quantum-mechanical phenomena
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H05K 1/02 - Printed circuits Details
• B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 23/44 - Arrangements for cooling, heating, ventilating or temperature compensation the complete device being wholly immersed in a fluid other than air
• H01L 23/498 - Leads on insulating substrates
• H05K 3/00 - Apparatus or processes for manufacturing printed circuits
• H10N 69/00 - Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group

Abstract

A tubular reactor includes a bed of catalyst powder confined within an annular space, a hollow insert having a distribution chamber and a collection chamber, and a second wall having at least one distribution opening and at least one collection opening. The second wall of the hollow insert includes, on at least a first longitudinal portion of the insert defined along the longitudinal axis, at least one offset distribution opening and at least one offset collection opening, every offset distribution opening being contained in a plane transverse to the longitudinal axis different from any plane transverse to the longitudinal axis containing an offset collection opening so that the direction of flow of gas distributed and/or admitted between an offset collection opening and an offset distribution opening has an axial component.

IPC Classes  ?

• B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds
• B01J 8/06 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds in tube reactorsChemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds the solid particles being arranged in tubes

Abstract

A method is for generating a cryptographic key from an SRAM memory and device implements such a method. The method includes steps of biased initialisation of a first set of cells located in a first region of the SRAM memory so as to promote the establishment, in a first logic state, of the cells of the first set, storing, in a second set of cells of a second region of the memory, the respective states of the cells of the first set and resulting from the first biased initialisation, then, performing a second biased initialisation of the first set of cells so as to promote a setting in a second logic state, complementary to the first logic state, the cells of the first set. The method further includes, after the first biased initialisation and the second biased initialization, establishing an N-bit digital key.

IPC Classes  ?

• G06F 21/72 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information in cryptographic circuits
• G06F 21/64 - Protecting data integrity, e.g. using checksums, certificates or signatures

Abstract

An imaging device for acquiring visible and infrared images, including a visible matrix sensor, and infrared matrix sensor, and a readout integrated circuit superimposed on the visible matrix sensor and on the infrared matrix sensor and formed by a readout stack including electronic elements and an interconnection stack. The readout stack is located between the sensitive layers of the matrix sensors, and the interconnection stack is located on the rear face of the infrared matrix sensor. In addition, conductive vias electrically connect respectively the interconnection stack to electronic elements of the visible matrix sensor, to electronic elements of the readout stack, and to electronic elements of the infrared matrix sensor.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

The invention relates to an optoelectronic device (1) comprising a substrate (10) extending mainly in a longitudinal plane (XY), an array of diodes (100a, 100b, 100c, 100d) arranged on the substrate (10), and at least one first diode (100a) bordered by a trench (1000). The trench is delimited by a flank (150a) of the first diode and separates the first diode from a second diode (100b). The first diode is configured to emit or receive light within a range of interest. The trench comprises a dielectric layer (200) that is transparent in the range of interest and has a lateral portion (200a) covering the flank of the first diode, and a volume (1500) in contact with the lateral portion, so as to define an interface with the lateral portion. The interface forms a reflection interface (250a) and forms a reflection angle of less than 89° with the longitudinal plane.

IPC Classes  ?

• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/60 - Reflective elements
• H01L 33/54 - Encapsulations having a particular shape

Abstract

A computer-implemented method for processing experimental data of a solid to be characterized, including atoms and including one or more defects, the experimental data coming from at least one sensor and having a multimodal distribution. The method includes the representation, in a space called descriptor space, of dimension K, comprised between 10 and 108, of one or more reference solid(s) and the data; the calculation for at least one portion of the atoms of the solid to be characterized of an experimental confidence score in the descriptor space, relative to the atoms of the reference solid; and the classification of the atoms of the structure depending on the experimental confidence score.

IPC Classes  ?

• G16C 20/70 - Machine learning, data mining or chemometrics
• G16C 20/20 - Identification of molecular entities, parts thereof or of chemical compositions

Abstract

The present description concerns an antenna (200) comprising: an amplifier array (201) comprising a plurality of first elementary cells (203); a transmitarray (105) comprising a plurality of second elementary cells (107); and at least one source (101), wherein said at least one source (101) is configured to irradiate, or to be irradiated by, the transmitarray (105), and the amplifier array (201) is configured to irradiate and to be irradiated by the transmitarray (105).

IPC Classes  ?

• H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
• H01Q 13/02 - Waveguide horns
• H01Q 21/29 - Combinations of different interacting antenna units for giving a desired directional characteristic

Abstract

The invention relates to a method for obtaining a layer at least partially made of a nitride (N), first comprising the provision of a stack comprising at least one assembly of pads (1000A1-1000B4) extending from a substrate (100). Each pad comprises at least one creep section (220A1-220A5) and one crystalline section (300A1,300A5) surmounting the creep section (200A1-200A5). Then, a crystallite (510A1-510A5) is epitaxially grown on at least some of said pads until coalescence of the crystallites, so as to form a nitride layer (550A). The pads of the assembly are distributed over the substrate, such that the relative arrangement of the pads of the assembly is such that during the epitaxy of the crystallites, the progressive coalescence of the crystallites is always done between, on the one hand, a crystallite or a plurality of coalesced crystallites and, on the other hand, an isolated crystallite.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C30B 25/18 - Epitaxial-layer growth characterised by the substrate
• C30B 29/40 - AIIIBV compounds

Abstract

Physical random value generation using a resistive memory device The present disclosure relates to a device configured to generate a random value, the device comprising: a resistive memory device (102) capable of being incrementally programmed; and a control circuit (104) configured to: - perform a first programming operation of the resistive memory device with first programming parameters in order to generate a first conductance variation of a first polarity in the resistive memory device; - perform a second programming operation of the resistive memory device with second programming parameters in order to generate a second conductance variation of a second polarity in the resistive memory device, the second polarity being the opposite polarity to the first polarity; and - generate the random value by reading a conductance value of the resistive memory device following the first and second programming operations.

IPC Classes  ?

• G06F 7/58 - Random or pseudo-random number generators
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or

Abstract

An assembly including a stack of solid oxide cells of the SOEC/SOFC type and a clamping system for the stack. This assembly furthermore includes at least one heating plate, demountable and interchangeable, inserted in a housing of at least one of the top and bottom clamping plates, the housing being formed in the thickness of the at least one of the top and bottom clamping plates, and comprising first and second opposite ends, at least one of which emerges on the lateral face-of the at least one of the top and bottom clamping plates, being located inside, at a distance from its main top and bottom faces substantially parallel to each other.

IPC Classes  ?

• H01M 8/248 - Means for compression of the fuel cell stacks
• C25B 9/05 - Pressure cells
• C25B 9/67 - Heating or cooling means
• C25B 9/77 - Assemblies comprising two or more cells of the filter-press type having diaphragms
• C25B 15/023 - Measuring, analysing or testing during electrolytic production
• H01M 8/04007 - Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids related to heat exchange
• H01M 8/0432 - TemperatureAmbient temperature
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
• H01M 8/2432 - Grouping of unit cells of planar configuration

Abstract

In the present invention, thanks to a prospective multicenter cohort study including 200 pregnant patients with five-serum sampling per patient, inventors investigated the concentrations of protein biomarkers in the plasma of high risk pregnant women during the second and third trimesters to predict spontaneous preterm birth. Inventors demonstrated that PROK1 (Prokineticin 1) also called EG-VEGF (Endocrine Gland-derived Vascular Endothelial Growth Factor), is secreted by the placenta and exhibits increased serum levels in patients with sPTB, before 37 weeks of gestation, compared with uncomplicated pregnant women. More precisely, Women with spontaneous preterm birth exhibited higher concentrations of serum PROK1/EG-VEGF than uncomplicated patients at 20 weeks, 24 weeks, 28 weeks and 32 weeks. Accordingly, serum PROK1/EG-VEGF concentrations could be considered as biomarker of spontaneous preterm birth in high-risk pregnant women.

IPC Classes  ?

• G01N 33/68 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving proteins, peptides or amino acids

Abstract

A method for producing a device comprising GAA transistors. Advantageously, the channels of the transistors are produced by deposition of a semiconductor material, preferably a 2D material, after successive removal of certain layers of the initial stack. The gates-all-around are produced after selective removal of the other layers from the initial stack. The initial stack does not comprise the semiconductor material, nor the material of the gates. The subsequent deposition of the semiconductor material aims to better preserve the semiconductor material.

IPC Classes  ?

• H10D 30/67 - Thin-film transistors [TFT]
• H10D 30/00 - Field-effect transistors [FET]
• H10D 30/01 - Manufacture or treatment
• H10D 62/10 - Shapes, relative sizes or dispositions of the regions of the semiconductor bodiesShapes of the semiconductor bodies
• H10D 62/80 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
• H10D 62/832 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
• H10D 64/01 - Manufacture or treatment
• H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Abstract

A cable cylinder having a screw rotatable by a motor, a nut cooperating with the screw to move in the body, the cable cylinder having a pair of upstream and downstream pulleys on either side of the nut. In at least one of the pairs, the pulleys are rotationally secured to one another. The two cables each cooperating with one of the upstream cables and one of the downstream cables to define strands parallel to the screw rotational axis and attached to the nut. One of the cables forms a loop while the other extends beyond its downstream pulley to cooperate with a remote pulley rotatably mounted about a separate axis of rotation, the remote pulley forming a return to return the extended cable to the upstream pulley, the extended cable prevented from sliding over its upstream or associated downstream pulley that is rotationally engaged.

IPC Classes  ?

• F16H 37/12 - Gearings comprising primarily toothed or friction gearing, links or levers, and cams, or members of at least two of these three types

Abstract

The present description concerns an antenna (100) comprising an amplifier array (101) comprising a plurality of first elementary cells (103); and a transmitarray (105) comprising a plurality of second elementary cells (107), wherein the amplifier array (101) is configured to irradiate, or to be irradiated by, the transmitarray (105), the amplifier array (101) being separated from the transmitarray (105) by a distance equal, to within 20%, to a central transmission and/or reception wavelength of the antenna (100).

IPC Classes  ?

• H01Q 23/00 - Antennas with active circuits or circuit elements integrated within them or attached to them
• H01Q 21/28 - Combinations of substantially independent non-interacting antenna units or systems

Abstract

xy oxyzz along the Z-axis, the specific zone (115) being located in a core of the solenoid (113).

IPC Classes  ?

• B29C 64/106 - Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
• B22F 10/12 - Formation of a green body by photopolymerisation, e.g. stereolithography [SLA] or digital light processing [DLP]
• B29C 64/124 - Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified
• B29C 64/20 - Apparatus for additive manufacturingDetails thereof or accessories therefor
• B29C 64/241 - Driving means for rotary motion
• B29C 64/30 - Auxiliary operations or equipment
• B33Y 10/00 - Processes of additive manufacturing
• B33Y 30/00 - Apparatus for additive manufacturingDetails thereof or accessories therefor
• B33Y 70/10 - Composites of different types of material, e.g. mixtures of ceramics and polymers or mixtures of metals and biomaterials
• H01F 7/02 - Permanent magnets
• H01F 7/20 - ElectromagnetsActuators including electromagnets without armatures
• H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets

Abstract

22111211 = 2.85×1018cm-322 = 5.40×1020cm-3, - an interface zone, between the carrier substrate and the working layer, comprising nodules and regions of direct contact between the working layer and the carrier substrate, the nodules comprising a metal or semiconductor material other than silicon carbide, the interface zone having an average resistivity of less than or equal to 0.01 mohm.cm2, a dopant concentration profile along a thickness of the semiconductor structure: - being in the form of a step, and - being devoid of a doping peak in the interface zone, or - exhibiting a doping peak in the interface zone, the extremum of which corresponds to a third dopant concentration equal to the second dopant concentration to within plus or minus 10%. The invention also relates to a process for fabricating such a semiconductor structure.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Abstract

A parameterising method and system integrated within a high-intensity focused ultrasound (HIFU) treatment device. The parameterising system includes a real-time simulation unit that makes it possible to predict, on the basis of geometric and physiological parameters of tissue regions in the area to be treated, and treatment parameters, the distribution of the ultrasonic field within the area. The computation is performed in real time by means of a metamodel: the ultrasonic field is estimated from an interpolation of maps of the ultrasonic field which are pre-computed and stored in a database, the maps being associated with different values of the geometric and physiological parameters of the tissue regions in question. The thermal dose applied at each point during treatment is subsequently computed and the tissue response is estimated. It is possible for the practitioner to check at any time that the simulated treatment is being used in accordance with tissue regions to be necrotised and tissue regions to be spared. The treatment parameters can be iteratively adjusted in order to conform to the objective.

IPC Classes  ?

• A61N 7/02 - Localised ultrasound hyperthermia

Abstract

A process for purifying ruthenium from an aqueous nitric acid solution which is present together with technetium and metal impurities, at a concentration at least 10 times lower than that of the technetium. A process for producing ruthenium-97 from a technetium-99 target which has been proton-irradiated beforehand, including implementation of the purification process. The processes herein can be used for production of ruthenium-97-based radiopharmaceuticals used in nuclear medicine for the diagnosis of cancer by imaging and the treatment thereof by targeted radiotherapy.

IPC Classes  ?

• C01G 55/00 - Compounds of ruthenium, rhodium, palladium, osmium, iridium, or platinum

Abstract

A method of transferring a layer from a source substrate to a destination substrate, comprising the following steps: a) activating a bonding surface of said layer and a bonding surface of the destination substrate, by ion etching of said surfaces, or by sputtering of a bonding material onto said surfaces; and b) after step a), placing into contact the bonding surface of said layer with the bonding surface of the destination substrate, wherein, during step a), a masking ring covers a peripheral portion of the bonding surface of said layer, and/or a masking ring covers a peripheral portion of the bonding surface of the destination substrate; and wherein steps a) and b) are carried out under vacuum and with no rupture of vacuum between the two steps.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B32B 37/00 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding

Abstract

A method of transferring a layer from a source substrate to a destination substrate including the following steps: a) arranging a masking disk on a central portion of a bonding surface of said layer and/or of the destination substrate b) implementing an ion etching to form a step in front of a peripheral portion, not covered with the masking disk, of the bonding surface of said layer and/or of the destination substrate c) removing the masking disk; d) activating the bonding surface of said layer and the bonding surface of the destination substrate; and e) placing into contact the bonding surface of said layer with the bonding surface of the destination substrate.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B32B 37/00 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding

Abstract

The invention relates to a method (100) for producing a multispectral filter array for an electromagnetic wave, the method comprising the following steps: - depositing (101) a layer of structuring material on a substrate; - structuring (102) the layer of structuring material in order to obtain a first structuring material pattern and a second structuring material pattern, each resin pattern having a curved upper surface; - conformally depositing (103) a first reflective layer on the first and second patterns, forming the first reflective layers of a first and a second color filter; - depositing (104) a layer of dielectric material on the first reflective layer so as to form the curved lower surfaces of the Fabry-Perot cavity dielectric layers of the first and second filters; - structuring (105, 106) the layer of dielectric material by nanoimprint lithography by means of a printing mould comprising at least two different curved imprints so as to form the curved upper surfaces of the Fabry-Perot cavity dielectric layers; - conformally depositing (107) a second reflective layer on the layer of dielectric material.

IPC Classes  ?

• G02B 5/201 -
• G01J 3/26 - Generating the spectrumMonochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filter

Abstract

The present invention relates to a composite material comprising a porous solid support and at least one malonamide non-covalently bonded to the surface of this porous solid support. The present invention also relates to a process for preparing such a material and also to the use thereof for extracting and recovering palladium from an acid leaching solution containing same.

IPC Classes  ?

• B01J 20/22 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising organic material
• B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
• B01J 20/32 - Impregnating or coating
• C22B 3/24 - Treatment or purification of solutions, e.g. obtained by leaching by physical processes, e.g. by filtration, by magnetic means by adsorption on solid substances, e.g. by extraction with solid resins
• C22B 11/00 - Obtaining noble metals

Abstract

The present invention is related to expressing an AHA5 protein in plants, and preferentially a mutated AHA5 protein leading to a constitutive activity of AHA5, to control stomatal closure and improve tolerance to drought conditions and yield in plants.

IPC Classes  ?

• C12N 15/82 - Vectors or expression systems specially adapted for eukaryotic hosts for plant cells
• A01H 1/00 - Processes for modifying genotypes
• A01H 5/10 - Seeds
• A01H 5/12 - Leaves
• A01H 6/46 - Gramineae or Poaceae, e.g. ryegrass, rice, wheat or maize
• C07K 14/415 - Peptides having more than 20 amino acidsGastrinsSomatostatinsMelanotropinsDerivatives thereof from plants

Abstract

This invention relates to a method for preparing a cyclic anhydride such as succinic anhydride and methyl succinic anhydride from an unsaturated carboxylic acid such as acrylic acid or crotonic acid. This method can also be used in the manufacture of food additives, plasticisers, polymers of interest, in particular polyurethanes and elastanes, resins, coatings and pharmaceutical products.

IPC Classes  ?

• C07D 307/60 - Two oxygen atoms, e.g. succinic anhydride
• B01J 31/04 - Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing carboxylic acids or their salts
• B01J 31/18 - Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes containing nitrogen, phosphorus, arsenic or antimony
• B01J 31/20 - Carbonyls
• B01J 31/24 - Phosphines

Abstract

A method for detecting biological objects by means of an SPR imaging detection system comprising an optical measurement device configured to generate plasmon resonance on a functionalized surface when said surface is exposed to a gas; the method comprising: an assimilation step by exposing the functionalized surface to a sample of interest formed of an aqueous carrier liquid containing the biological objects; a step of removing the liquid in contact with the functionalized surface and exposing the surface to a gas not containing the biological objects, said objects remaining bound to the ligands of the sensitive site of the functionalized surface; a step of acquiring an image of the sensitive site; a step of detecting the biological objects from the acquired image.

IPC Classes  ?

• G01N 33/569 - ImmunoassayBiospecific binding assayMaterials therefor for microorganisms, e.g. protozoa, bacteria, viruses
• G01N 21/552 - Attenuated total reflection

Abstract

The manufacture of a photovoltaic module includes providing a first layer having a skew shape, manufacturing a second layer having a skew shape, and then placing a stack further including photovoltaic cells and at least one encapsulating material in an assembly mold varying between a closure configuration delimiting a predetermined air gap and an opening configuration. In an assembly step, where the closure configuration of the assembly mold is adopted, the temperature within the stack is maintained at an operating temperature comprised between 70° C. and 180° C., and preferably between 80° C. and 150° C., during an assembly period adapted as a function of the at least one encapsulating material so that the at least one encapsulating material undergoes melting at least partially and to create an encapsulating assembly capable of adhering to the plurality of photovoltaic cells and to the first layer and/or to the second layer.

IPC Classes  ?

• H10F 19/80 - Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
• B29C 70/70 - Completely encapsulating inserts
• B29L 31/34 - Electrical apparatus, e.g. sparking plugs or parts thereof

Abstract

A photonic sensor including an interferometer having a first arm and a second arm including respective optical waveguides, wherein the first arm includes: at least a first coupling device for coupling a guided propagation mode of the waveguide and a free propagation mode of an ambient medium; and an optical system configured to direct the free propagation mode toward the or a second coupling device for coupling the free propagation mode of the ambient medium and a guided propagation mode of the waveguide; whereby a light wave traversing the first arm travels one portion of its path through the ambient medium.

IPC Classes  ?

• G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
• G01N 21/45 - RefractivityPhase-affecting properties, e.g. optical path length using interferometric methodsRefractivityPhase-affecting properties, e.g. optical path length using Schlieren methods
• G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference

Abstract

This invention relates to a solid-state battery and its production method.

IPC Classes  ?

• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
• H01M 4/02 - Electrodes composed of, or comprising, active material
• H01M 4/04 - Processes of manufacture in general
• H01M 10/04 - Construction or manufacture in general
• H01M 10/0562 - Solid materials

Abstract

The invention relates to a photovoltaic module, and to a method for producing same, comprising a step of producing a flexible interconnection structure (8) according to the following steps: - producing a routing film comprising a structural film (11), at least one conductive routing track (9A) on one face of the structural film (11), and at least one other conductive routing track (9B) on the other face of the structural film (11); - forming at least two connection regions (14) on a portion of a conductive routing track (9A, 9B); - for each connection region (14), creating a fold adjacent to the connection region (14), wherein the operations for placing the rear face layers further comprise the following steps: - positioning the flexible interconnection structure (8) on the rear face of the photovoltaic cells (4); - electrically connecting the connection regions (14).

IPC Classes  ?

• H01L 31/048 - Encapsulation of modules
• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells

Abstract

The invention relates to a device for detecting a gas of interest emitted by an object, the device being intended to be arranged on an object, the gas of interest absorbing light in an absorption spectral band, wherein the device comprises: a contact face, configured to be arranged against the object, and configured to allow the gas of interest emitted by the object to pass through it; a collection chamber that opens onto the contact face and is delimited by a side wall, the side wall extending around a transverse axis perpendicular to the contact face; an intake opening that forms an air inlet, and is arranged through the side wall and configured to admit ambient air into the collection chamber; a photoacoustic gas sensor.

IPC Classes  ?

• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
• G01N 29/24 - Probes
• G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
• G01N 29/00 - Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic wavesVisualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
• G01N 21/00 - Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
• G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
• G01L 11/02 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group or by optical means
• G01L 11/04 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group or by acoustic means
• G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated

Abstract

TTFF) of formation of the carbon layer.

IPC Classes  ?

• C30B 29/36 - Carbides
• C30B 33/02 - Heat treatment
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

An assembly of non-volatile resistive memories associated with a selector, includes a selector layer and an upper electrode; a first memory stack including a first active layer, extending against a part of a lateral surface of the upper electrode; a second memory stack including a second active layer, extending against another part of the lateral surface of the upper electrode; the upper electrode being common to the first and the second memory stack.

IPC Classes  ?

• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

A device for estimating a position of a radioactive source, comprising: a holder; and at least two radiation detectors configured to generate a detection signal, the device being such that, each detector being assigned a position, the detectors are placed around an iso-centroid of each position, i.e., a centroid of each position equally weighted. The device also includes processing circuitry configured to compute a centroid of each position weighted by the detection signal measured by each detector; and depending on the centroid, estimate a direction pointing toward the source, corresponding to a direction between the device and the source.

IPC Classes  ?

• G01S 3/78 - Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received using electromagnetic waves other than radio waves
• G01T 1/29 - Measurement performed on radiation beams, e.g. position or section of the beamMeasurement of spatial distribution of radiation
• G01T 7/00 - Details of radiation-measuring instruments

Abstract

A gas-phase analytical system including an injection unit configured to inject a sample to be analyzed including at least one chemical compound, a unit for introducing a stream of carrier gas, a transport column, and a detection device, the chemical compound(s) being entrained by the gas into the column up to the device. The device is an optical detector including at least one Mach-Zehnder interferometric sensor supplied by an optical source and integrated into a microfluidic structure, the sensor comprising a sensing arm exposed to the chemical compound(s) and a reference arm impermeable to the chemical compound(s), the sensor(s) being designed to optically detect the passage of the chemical compound(s) through the sensing arm.

IPC Classes  ?

• G01N 30/74 - Optical detectors
• B01D 53/02 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography
• G01N 30/02 - Column chromatography

Abstract

Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.

IPC Classes  ?

• G01R 33/09 - Magneto-resistive devices

Abstract

The invention relates to a method for manufacturing an electric current sensor (SHE) comprising the following steps: a) providing a metal or metal alloy substrate (SBT), b) making a non-through cavity (CVT) in said substrate so that said cavity separates the substrate into two areas (Z1, Z2), c) producing a resistive element (ER) in said cavity (CVT) by additive manufacturing, d) annealing the resulting assembly, e) removing a part of the substrate (SBT) to leave only the resistive element (ER) between the two areas (Z1, Z2) of the substrate, and f) defining, within each area (Z1, Z2), a connection terminal (BCE1, BCE2) to obtain electrodes (PEL, DEL).

IPC Classes  ?

• G01R 1/04 - HousingsSupporting membersArrangements of terminals
• B33Y 10/00 - Processes of additive manufacturing
• B33Y 80/00 - Products made by additive manufacturing
• G01R 1/20 - Modifications of basic electric elements for use in electric measuring instrumentsStructural combinations of such elements with such instruments

Abstract

An array of at least two photodiodes, wherein each photodiode includes an absorption region and a capture region, the capture region including an electrically conductive pad, the absorption region being in contact with the capture region, the absorption region being configured to absorb an incident radiation on the photodiode and to enable a diffusion of charge carriers, in which each absorption region is separated from the other absorption regions, and wherein the absorption region of each photodiode has a convex shape towards the incident radiation.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.

IPC Classes  ?

• G01R 33/09 - Magneto-resistive devices

Abstract

The invention relates to a method for determining an electrical parameter of a tandem photovoltaic cell (12) comprising a first sub-cell (22) including a layer (24) of a first semiconductor material, and a second sub-cell (26) including a layer (28) of a second semiconductor material, the first sub-cell being above the second, the second semiconductor material having an optical bandgap different from that of the first. The method is implemented by an electronic determination device (20) and comprises acquiring, via a measuring device (16), at least two sets of N luminescence values for the cell, each acquired set resulting from a respective continuous excitation signal, N≥1; and computing a set of N values of the electrical parameter from the acquired sets of N luminescence values. The method makes it possible to characterize the cell with a two-dimensional resolution, and to carry out two-dimensional mapping of the cell.

IPC Classes  ?

• H02S 50/10 - Testing of PV devices, e.g. of PV modules or single PV cells

Abstract

A photoacoustic detecting device to be applied, via a contact face, against a medium to be analyzed, the device comprising: a hollow cavity; a light source that is pulsed or amplitude-modulated; an acoustic detector configured to detect an acoustic wave extending through the cavity, the device further comprises an interface membrane, forming the contact face, the interface membrane being configured to: form an interface between the gas, filling the cavity, and the medium to be analyzed; block passage of a liquid or gel between the medium to be analyzed and the cavity; and generate an acoustic pressure wave inside the cavity, under the effect of a variation in the temperature of the interface membrane, the temperature variation of the interface membrane being induced by heating of the medium resulting from illumination of the medium.

IPC Classes  ?

• G01N 29/24 - Probes
• G01N 29/02 - Analysing fluids

Abstract

A control unit of an SRAM memory for triggering an initialisation, selected from different possible distinct initialisation types, of at least one given group of SRAM memory cells of the SRAM memory, the control unit configured to adopt a “locked” operating mode, in which it triggers an initialisation of the given group of cells according to a “default” initialisation type corresponding to a first initialisation type from the different distinct initialisation types or an erasing, and holds at the output the “hard masking” command signal in the same given state as long as a particular so-called “unlocking” signal sequence is not received on the hard masking inputs, the control unit being further configured, subsequently to the reception of the particular so-called “unlocking” signal sequence, to enable the initialisation of the given group according to different initialisation types which may be distinct from the default initialisation.

IPC Classes  ?

• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• G11C 5/14 - Power supply arrangements
• G11C 11/417 - Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type

Abstract

The invention relates to a method for producing a two-dimensional material (10), comprising the following steps: - growing the two-dimensional material (10) on a surface (20s) of a growth substrate (20) such that the two-dimensional material is bonded to said surface by van der Waals forces, said surface consisting of a first material having a first relative permittivity; - providing a target substrate (30) having a surface (30s) consisting at least in part of a second material having a second relative permittivity strictly greater than the first relative permittivity; - assembling (S2) the growth substrate (20) and the target substrate (30) by direct adhesive bonding between the two-dimensional material (10) and the second material; and - separating the growth substrate (20) and the target substrate (30), whereby at least one part of the two-dimensional material (10) detaches from the growth substrate and remains adhesively bonded to the target substrate.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The invention deals with the crucial issue of obtaining reliable measurement of the fetus's physiological values during labour. For this, the inventors has found that maintaining a good position of the probe during measurement is very important and has developed a specific contact surface for the probe with a principal portion surrounded by two lateral wings. This drastically improves the quality of the measurement, resulting in a better prevention of hypoxia.

IPC Classes  ?

• A61B 5/291 - Bioelectric electrodes therefor specially adapted for particular uses for electroencephalography [EEG]
• A61B 5/369 - Electroencephalography [EEG]
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons

Abstract

The invention relates to a vacuum evaporation deposition device (30) comprising: - a deposition housing or enclosure; - a deposition support (32); - evaporation means (36) for evaporating a material towards the deposition substrate (32); - reactive gas injection means (41) for injecting a reactive gas into the chamber; - means forming a cover (2) around the deposition substrate, extending from the deposition support, the axis XX' forming an axis of rotational symmetry perpendicular to the surface of the deposition support and centred thereon, the reactive gas injection means (41) comprising a duct provided with a plurality of openings for injecting a reactive gas with an initial momentum distribution that is rotationally symmetrical about the axis XX'.

IPC Classes  ?

• C23C 14/24 - Vacuum evaporation
• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• C23C 14/08 - Oxides
• C23C 14/54 - Controlling or regulating the coating process
• C23C 14/14 - Metallic material, boron or silicon
• C23C 14/50 - Substrate holders
• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• C23C 14/04 - Coating on selected surface areas, e.g. using masks

Abstract

An electronic chip including a support and connection pillars, each connection pillar including a trunk including an end portion and an intermediate portion coupling the end portion to the support, and including a collar at the junction between the end portion and the intermediate portion.

IPC Classes  ?

• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

A heat exchanger has first and second heat-exchange modules including first and second fluid-circulation systems, partition plates sandwiched between first and second heat-exchange modules and each fluidically disconnecting the first and second fluid-circulation systems from one another. At least one of the heat-exchange modules includes a stack of shaped plates superposed along a longitudinal axis, and each consisting of at least one hollowed-out zone passing through it and of a surrounding solid zone of constant thickness, the corresponding fluid-circulation system being defined by the hollowed-out zones of the stack and extending between the adjacent partition plates, at least part of the hollowed-out zone of one of the shaped plates being superposed with a solid zone of another shaped plate adjacent to it, and vice versa.

IPC Classes  ?

• F24H 9/14 - Arrangements for connecting different sections, e.g. in water heaters

Abstract

A heat exchanger including: first and second heat-exchange modules comprising fluid-circulation systems, partition plates which fluidically disconnect adjacent fluid-circulation systems, at least one of the heat-exchange modules including: a frame plate of constant thickness, including a through-aperture, and an insert fully housed in the aperture and of a thickness equal to the thickness of the frame plate, and consisting of a single shaped plate or a plurality of shaped plates forming a stack and each consisting of at least one hollowed-out zone passing through it and a surrounding solid zone of constant thickness, the corresponding fluid-circulation system being formed in the hollowed-out zone of the single plate or of each plate of the stack and bounded by the surrounding solid zone or zones and by the adjacent partition plates.

IPC Classes  ?

• F28F 3/08 - Elements constructed for building-up into stacks, e.g. capable of being taken apart for cleaning

Abstract

A process for producing a layer of organic-inorganic hybrid perovskite material including the following steps: a) Forming of a layer comprising the inorganic precursors of perovskite material on a substrate by CSS or CSVTD, b) Implementation of a CSS or CSVTD step from organic precursors the organic precursors with the layer of inorganic precursors and a layer of organic-inorganic hybrid perovskite material is obtained.

IPC Classes  ?

• H10K 71/16 - Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
• C07F 19/00 - Metal compounds according to more than one of main groups
• H10K 30/30 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
• H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• H10K 30/50 - Photovoltaic [PV] devices
• H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3

Abstract

xyy is deposited on the surface of the substrate, where metal silicide M is a transition metal, x is an integer selected from the group consisting of 1, 2, 3, 4 and 5, and y is an integer selected from the group consisting of 1, 2, 3 and 4; b) depositing a mixture comprising an organic resin, preferably a furan or phenolic resin, and a metal silicon powder, on the surface of the substrate obtained at the end of step a), by means of which, at the end of step b), a composite material is obtained that comprises an ultra-high temperature ceramic matrix reinforced with carbon fibres.

IPC Classes  ?

• C04B 41/00 - After-treatment of mortars, concrete, artificial stone or ceramicsTreatment of natural stone
• C04B 41/45 - Coating or impregnating
• C04B 41/52 - Multiple coating or impregnating
• C04B 41/89 - Coating or impregnating for obtaining at least two superposed coatings having different compositions
• C04B 111/00 - Function, property or use of the mortars, concrete or artificial stone

Goods & Services

Logiciels; logiciels enregistrés; logiciels d’applications; applications logicielles téléchargeables; logiciels d'application téléchargeables pour des environnements virtuels; plateformes logicielles, enregistrées ou téléchargeables; programmes informatiques enregistrés; programmes informatiques téléchargeables; tous ces produits étant exclusivement destinés à un usage dans le domaine de la cybersécurité et de la sécurité des systèmes d’information et des outils de communication. Conception et développement de logiciels; fourniture de logiciels non téléchargeables en ligne; location de logiciels et de programmes informatiques; logiciels en tant que service [SaaS]; programmation de programmes de sécurité Internet; sécurité, protection et restauration des technologies de l'information; consultation en matière de sécurité informatique; conseils en matière de sécurité de réseaux de télécommunications; tous ces services étant exclusivement fournis dans le domaine de la cybersécurité et de la sécurité des systèmes d’information et des outils de communication.

Abstract

A method of porosification of a structure including a base substrate covered with (Al,In,Ga)N/(Al,In,Ga)N mesas, including a porosification step during which the (Al,In,Ga)N/(Al,In,Ga)N mesas are electrochemically porosified, during the porosification step, the structure further comprises, between the mesas or between groups of mesas, electrically-conductive lines covered with an electrically-insulating element.

IPC Classes  ?

• H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

A method for passivating photovoltaic cells includes providing a plurality of photovoltaic cells, each cell including a front face, a rear face and a peripheral edge connecting the front and rear faces, on each cell, forming an insulation element shaped along the perimeter of the cell, the insulation element being formed on the front or rear face, stacking the plurality of cells, the insulation element being positioned between two adjacent cells so that the face of the cell provided with the insulation element is positioned at a distance from the face facing the adjacent cell, and depositing a passivation layer onto the peripheral edge of the cells by injecting a passivation species, the insulation element forming a penetration barrier to the passivation species so that the passivation layer covers the peripheral edge of the cells.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A process for producing an organic-inorganic perovskite layer including the following steps: Forming of a layer of inorganic precursors on a substrate, Implementation of a step of close space sublimation from a powder including the organic precursors, whereby the vapors from the layer of organic precursors react with the layer of inorganic precursors and a hybrid organic-inorganic perovskite layer is formed, the powder of organic precursors being obtained by mechanosynthesis by co-grinding at least a first group of particles of a first material and a second group of particles of a second material to form a third group of particles of a third material, the third group of particles forming the powder of organic precursors.

IPC Classes  ?

• H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
• C07F 7/24 - Lead compounds
• C23C 8/34 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in more than one step
• H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• H10K 30/57 - Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
• H10K 71/10 - Deposition of organic active material

Abstract

A heat exchanger includes first and second modules having first and second systems for circulating first and second fluids respectively, the first fluid comprising different first and second fluid components, partition plates in contact with the adjacent modules and each fluidically disconnecting the first and second circulation systems from one another. Each of the second modules includes a third circulation system, fluidically disconnected from the second circulation system, the first and third circulation systems being fluidically connected through the partition plate. The exchanger introduces a change in phase of the second component by exchanging heat between the first and second fluids and directing the first and second components out of the exchanger through the first and third circulation systems.

IPC Classes  ?

• F28D 9/00 - Heat-exchange apparatus having stationary plate-like or laminated conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall

Abstract

The invention relates to a system for reducing or optimising the electricity consumption or generation of a fluid device with at least one rotating component, the system comprising: - at least one electrical sensor (2) with electrodes (100) distributed around a body of the device, wherein their ends are flush with the inner surface of the body and face the component; - an electronic circuit (12) for controlling the electrodes and performing electrical impedance tomography measurements; - a signal processing unit suitable for reconstructing images of the fluid in the body from matrix measurements; - an electronic unit for automatically controlling the control member of the device suitable for modifying the operating frequency of the device so as to adjust its electrical power and, consequently, its flow-to-power ratio.

IPC Classes  ?

• F01D 21/00 - Shutting-down of machines or engines, e.g. in emergencyRegulating, controlling, or safety means not otherwise provided for
• F04D 15/00 - Control, e.g. regulation, of pumps, pumping installations, or systems
• F04D 27/00 - Control, e.g. regulation, of pumps, pumping installations or pumping systems specially adapted for elastic fluids
• F04D 29/66 - Combating cavitation, whirls, noise, vibration, or the likeBalancing

Abstract

The invention essentially consists of a system for detecting a or more than one defect liable to result in malfunction, or even breakage, of fluidic equipment installed in a fluidic circuit. The system comprises an electric sensor that has electrodes distributed, preferably regularly, around a section upstream of the equipment and with their ends flush with the internal wall of the section. Electrical impedance tomography (EIT) measurements are carried out using signals that are either trigonometric, or per pair of electrodes, employed simultaneously to excite all the electrodes or sequentially on a sub-set of electrodes. This measurement makes it possible, in a non-invasive and non-destructive manner, to view, in real time and continuously, the interior of the section and therefore of the fluid flowing therein, by measuring electrical properties (electrical current and potential).

IPC Classes  ?

• G01F 1/64 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using electric or magnetic effects by measuring electrical currents passing through the fluid flowMeasuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using electric or magnetic effects by measuring electrical potential generated by the fluid flow, e.g. by electrochemical, contact, or friction effects
• F04D 15/00 - Control, e.g. regulation, of pumps, pumping installations, or systems
• F04B 51/00 - Testing machines, pumps, or pumping installations
• G01F 15/00 - Details of, or accessories for, apparatus of groups insofar as such details or appliances are not adapted to particular types of such apparatus
• G01M 3/40 - Investigating fluid tightness of structures by using electric means, e.g. by observing electric discharges
• G01N 27/20 - Investigating the presence of flaws

Abstract

Un ensemble de distribution de gaz comprend une premiere plaque (20) et une seconde plaque (12) paralleles I’une a I’autre, la premiere plaque (20) comprenant des orifices de communication (21, 22, 23, 24) de gaz. Un dispositif d’interface d’etancheite (40) comporte des joints d’etancheite (41, 42, 43, 44) dispose autour des orifices de communication (21, 22, 23, 24) et une entretoise (50) disposee dans un plan de couplage entre les premiere et seconde plaques (20, 12). L’entretoise (50) et les joints d’etancheite (41, 42, 43, 44) torment une interface d’etancheite ayant deux plans de symetrie perpendiculaires entre eux et perpendiculaires au plan de couplage, I’epaisseur des joints d’etancheite (41, 42, 43, 44) avant couplage sous pression des premiere et seconde plaques (20, 12) etant superieure a I’epaisseur de l’entretoise (50). Utilisation pour un electrolyseur ou une pile a combustible a oxydes solides a haute temperature.

IPC Classes  ?

• C25B 9/73 - Assemblies comprising two or more cells of the filter-press type
• H01M 8/0273 - Sealing or supporting means around electrodes, matrices or membranes with sealing or supporting means in the form of a frame
• H01M 8/2432 - Grouping of unit cells of planar configuration
• H01M 8/247 - Arrangements for tightening a stack, for accommodation of a stack in a tank or for assembling different tanks
• H01M 8/2483 - Details of groupings of fuel cells characterised by internal manifolds

Abstract

A method for etching at least a portion of a layer based on a III-N material includes exposing a least one portion of an upper face of the III-N layer to a plasma treatment with bias voltage pulsing based on chlorine, wherein the plasma treatment is configured to present a duty cycle comprised between 20% and 80%. A first non-zero polarization bias is applied to the substrate during Ton, and a second polarization bias lesser than the first non-zero polarization bias or no polarization bias is applied, during Toff, so as to etch the portion of the III-N layer. The duration of the etching is significantly reduced to obtain a satisfying quality of the III-N layer for the operation of a microelectronic device, such as a transistor or a diode.

IPC Classes  ?

• H01J 37/32 - Gas-filled discharge tubes
• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

The invention relates to a frequency-modulated, continuously transmitting radar measurement device including a generator configured to generate N first periodic radar signals, the frequency of each of said first periodic radar signals varies linearly as a function of time, in a frequency band B, over sections Tx of a part Ttrame of a period T, the frequencies of said first periodic radar signals being different from one another at each time instant of the part Ttrame; N transmit antennas; M receive antennas, each receive antenna being configured to receive a signal including echoes of the first periodic radar signals; a receive circuit configured to calculate, from the M signals, a range and/or a radial velocity and/or an angle, associated with a reflector detected by the radar measurement device.

IPC Classes  ?

• G01S 7/35 - Details of non-pulse systems
• G01S 13/58 - Velocity or trajectory determination systemsSense-of-movement determination systems

Abstract

The invention relates to a method for manufacturing an optoelectronic device (1) including an array of diodes (D1, D2, D3) and an array of colour conversion portions (P1, P2), including the following steps: providing the array of diodes (D1, D2, D3), and the upper electrode layers (E1, E2, E3); depositing a dielectric layer (26) having a substantially zero surface potential; applying a potential difference between an electrode (2) and the first upper electrode layers (E1), resulting in the formation of first patterns (M1) with non-zero surface potential in the dielectric layer (26); producing the first colour conversion portions (P1), by contacting the dielectric layer (26) with a colloidal solution (S1) containing first photoluminescent particles (p1).

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A method for passivating photovoltaic cells includes providing a plurality of cells, each cell including a front face, a rear face and a peripheral edge, each cell being provided with a plurality of first tracks and a plurality of second tracks being parallel, stacking the cells, the plurality of first tracks and the plurality of second tracks of each cell being positioned between the cell concerned and an adjacent cell, and depositing a passivation layer onto the peripheral edge of the cells by injecting a passivation species, the plurality of first tracks and the plurality of second tracks forming a penetration barrier to the passivation species.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells

Abstract

22, a base and a catalyst. The method of the invention falls within a circularity approach to boron, enabling recycling of (pseudo-)haloborane compounds, which are a waste commonly encountered in boron chemistry, to hydroboranes with higher added values.

IPC Classes  ?

• C07F 5/02 - Boron compounds

Abstract

The invention relates to a composite material which is provided in the form of porous beads with an open porosity, each bead comprising a plurality of porous carbon-based particles, bound together by an organic polymer, and which is characterised in that at least one organic ligand of uranium(VI) is deposited non-covalently in the pores of the beads. The invention also relates to a method for preparing this material and to the use thereof for extracting uranium(VI) from an aqueous solution comprising sulphuric acid. The invention can be used in the treatment of uranium ores with a view to recovering the uranium contained in these ores.

IPC Classes  ?

• B01J 20/20 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material comprising free carbonSolid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material comprising carbon obtained by carbonising processes
• B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
• B01J 20/30 - Processes for preparing, regenerating or reactivating
• B01J 20/32 - Impregnating or coating
• C22B 60/02 - Obtaining thorium, uranium or other actinides
• C02F 1/28 - Treatment of water, waste water, or sewage by sorption
• G21F 9/12 - Processing by absorptionProcessing by adsorptionProcessing by ion-exchange
• C02F 101/00 - Nature of the contaminant
• C01B 32/182 - Graphene
• C01B 32/198 - Graphene oxide
• C01B 32/20 - Graphite

Abstract

A multispectral filter for electromagnetic radiation, the filter including at least two-colour filters, each colour filter including: a metal grating including metal patterns repeated according to a given period, each metal pattern being spaced apart from an adjacent metal pattern by a given non-zero spacing; a continuous reflective layer; a pattern of dielectric material of Fabry-Perot cavity between the metal grating and the continuous reflective layer; the thickness of the patterns of dielectric material of the two-colour filters being different.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A device for holding a photovoltaic cell to form a passivation layer on the photovoltaic cell, the photovoltaic cell including a first face, a second face and a peripheral edge connecting the first face and the second face, the device including a first support part including a first support face and a second support face, the first support face being provided with a first seal shaped according to a perimeter of the photovoltaic cell, a second support part including a third support face and a fourth support face, the third support face being provided with a second seal shaped according to the perimeter of the photovoltaic cell, and a compression device configured to hold the photovoltaic cell bearing tightly against the first seal and against the second seal.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• C23C 8/06 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases

Abstract

The invention relates to an interconnection structure (5) for a set of solar cells, the structure being formed of an oblong conductive element (11) and insulating strips arranged on either side of the oblong conductive element, a first insulating strip (20) comprising first holes (21), and a second insulating strip (30) comprising second holes (31), wherein the oblong conductive element (11) is provided with a series of conductive folds (12a, 12b), including one or more first conductive folds (12a) that respectively pass through one or more first holes (21) in the first insulating strip (20) and are capable of being connected to a first solar solar cell, and one or more second conductive folds that respectively pass through one or more second holes (31) in the second insulating strip (30) and are able to be connected to a conductive track or to a second solar cell of the set of solar cells.

IPC Classes  ?

• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells

Abstract

The invention relates to a method for producing a highly textured magnet comprising the following steps: a) providing: -a 1st21414B, - a 2nd21414B, b) subjecting the 2ndpowder to a hydrogenation-disproportionation treatment, c) mixing the 1stpowder with the 2nd powder obtained at the end of step b), d) subjecting the mixture obtained at the end of step c) to a magnetic field, e) subjecting the mixture obtained at the end of step d) to a compacting step so as to obtain a compacted part, f) subjecting the compacted part obtained at the end of step e) to a sintering step so as to obtain a magnet.

IPC Classes  ?

• H01F 1/057 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
• H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets

Abstract

The invention relates to a method for producing a highly coercive magnet, the method comprising the following steps: a) providing: - a 1st21414B magnetic phase; - a 2nd21414B magnetic phase; b) the 2ndpowder is subjected to a hydrogenation-disproportionation treatment; c) the 1stpowder is mixed with the 2nd powder obtained at the end of step b); d) the mixture obtained at the end of step c) is subjected to a compacting step so as to obtain a compacted part; e) the compacted part obtained at the end of step d) is subjected to a presintering step; f) the presintered part obtained at the end of step e) is subjected to a sintering step.

IPC Classes  ?

• H01F 1/057 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and IIIa elements, e.g. Nd2Fe14B
• H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets

Goods & Services

Matériaux de construction métalliques; Alliages de nickel résistants à la corrosion pour la construction et le revêtement; Alliages de nickel à durcissement structural destinés aux structures exposées à des températures élevées; Revêtements en alliage de nickel pour la protection contre la corrosion causée par les sels fondus. Services de fabrication et de traitement d’alliages métalliques; Services de fonderie et de forge d’alliages métalliques; fabrication additive par laser et autres techniques de fabrication additive pour la production de pièces en alliages de nickel. Recherche et développement dans le domaine des matériaux résistants à la corrosion; Recherche et développement d'alliages métalliques à base de nickel; Études et analyses de matériaux pour applications en environnements hautement corrosifs; Services d'ingénierie; Conception et développement de structures et de pièces en alliages métalliques; Conseil en ingénierie pour la sélection et l'application d'alliages métalliques résistants à la corrosion; Conception et optimisation de pièces et structures pour une résistance maximale aux environnements corrosifs.

Abstract

An assembly includes at least two selectors arranged electrically in parallel to one another and each being electrically connected in series to a memory layer forming at least two distinct non-volatile resistive memories each associated, respectively, with one of the two selectors, the assembly including two upper electrodes which both extend over the memory layer and which are electrically insulated from each other, one of the selectors extending against a lateral surface of the first upper electrode and another of the selectors extending against a lateral surface of the second upper electrode.

IPC Classes  ?

• H10N 70/20 - Multistable switching devices, e.g. memristors
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

The present disclosure relates to a pixel circuit of an image sensor, the pixel circuit comprising: a pinned photodiode (PD) coupled to a sense node (SN); a comparator (104) configured: to compare, during a first read phase, a first sense node voltage (Vpix) at the sense node (SN) with a first voltage ramp (V_RAMP) and to generate an output signal (WRITE) if the voltage of the first voltage ramp (V_RAMP) crosses the first sense node voltage (Vpix); and, otherwise, to compare, during a second read phase, a second sense node voltage (Vpix) at the sense node (SN) with a second voltage ramp (V_RAMP) and to generate an output signal (WRITE); and a memory (108) configured to receive a digital ramp (DATA_RAMP), and to store, in response to the output signal (WRITE) of the comparator (104), a value of the digital ramp (DATA_RAMP) to form pixel data (DATA_PIX).

IPC Classes  ?

• H04N 25/581 - Control of the dynamic range involving two or more exposures acquired simultaneously
• H04N 25/47 - Image sensors with pixel address outputEvent-driven image sensorsSelection of pixels to be read out based on image data
• H04N 25/707 - Pixels for event detection
• H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters

Abstract

A method for obtaining and processing an image acquired by a gamma camera, the gamma camera comprising a detector configured to detect X-ray or gamma-ray photons emitted in a field of observation of the gamma camera, in order to obtain a reconstructed image. The reconstructed image corresponds to a position of radiation sources in the field of observation, the reconstructed image being liable to contain multiple regions of interest corresponding to hotspots. The method comprises selecting a region of interest so as to determine a probability of the hotspot being present in the selected region of interest.

IPC Classes  ?

• G06T 11/00 - 2D [Two Dimensional] image generation

Abstract

The invention is based on a method for processing an X-ray and gamma-ray radiation spectrum acquired by a spectrometry device (1). The processing method takes into consideration a spectral dispersion matrix (D). The spectral dispersion matrix models the energy response of the device. The method comprises establishing a transfer matrix (U,U′,D′), using the spectral dispersion matrix. The transfer matrix is then used to establish a direct model, linking measured variables, forming an input vector (m), and variables to be estimated, forming an output vector. The invention of the direct model allows the output vector (a,s,h,ε) to be estimated. The invention may be applied to quantifying the activity of an object to be inspected or to performing an energy or efficiency calibration of the spectrometry device. FIG. 2B.

IPC Classes  ?

• G01T 1/36 - Measuring spectral distribution of X-rays or of nuclear radiation

Abstract

A stack of SOEC/SOFC solid oxide cells includes a plurality of stacked plates and two guiding elements ensuring that the vertical stacking of at least some of the plates is guided, each plate having two guiding orifices. In a cross-sectional view, the guiding orifices are aligned in a first horizontal direction and are spaced apart by a smaller inter-orifice distance, the guiding elements being spaced apart by a greater smaller inter-element distance and the difference corresponding to the identical inner clearance for the two guiding orifices. The guiding orifices are spaced apart by a larger inter-orifice distance and the guiding elements are spaced apart by a shorter larger inter-element distance, the difference corresponding to the outer clearance, which is greater than the inner clearance.

IPC Classes  ?

• H01M 8/2432 - Grouping of unit cells of planar configuration
• C25B 9/77 - Assemblies comprising two or more cells of the filter-press type having diaphragms
• C25B 13/02 - DiaphragmsSpacing elements characterised by shape or form
• H01M 8/0256 - Vias, i.e. connectors passing through the separator material
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
• H01M 8/2404 - Processes or apparatus for grouping fuel cells

Abstract

An image sensor including a plurality of pixels, each pixel including a non-pinned photodiode connected, by a metal connecting element, to a pinned region formed in a first semiconductor substrate.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An assembly includes at least two non-volatile resistive memories arranged electrically in parallel to one another and each being electrically connected in series to a selector layer respectively forming at least two selectors, each one assigned to one of the memories, the assembly including two upper electrodes which both extend over the selector layer and which are electrically insulated from each other, one of the resistive memories extending against a lateral surface of the first upper electrode and another of the resistive memories extending against a lateral surface of the second upper electrode.

IPC Classes  ?

• H10N 70/20 - Multistable switching devices, e.g. memristors
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

A pixel circuit of an image sensor comprises a pinned photodiode (PD) coupled to a sense node (SN); a comparator (104) configured: to compare, during a first read phase, a first sense node voltage (Vpix) at the sense node (SN) with a first voltage ramp (V_RAMP) and to generate an event signal (EVENT) if the voltage of the first voltage ramp (V_RAMP) crosses the first sense node voltage (Vpix); and otherwise, to compare, during a second read phase, a second sense node voltage (Vpix) at the sense node (SN), with a second voltage ramp (V_RAMP) and to generate an event signal (EVENT) when the voltage of the second voltage ramp (V_RAMP) crosses the second sense node voltage (Vpix); and an event signaling circuit (1102) configured to signal the generation of the event signal during the first or second read phase to event logging circuitry.

IPC Classes  ?

• H04N 25/47 - Image sensors with pixel address outputEvent-driven image sensorsSelection of pixels to be read out based on image data
• H04N 25/59 - Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
• H04N 25/707 - Pixels for event detection
• H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters

Abstract

A method for manufacturing a porous monolith includes: forming a sol including a sol-gel precursor in aqueous solution; at least partially filling with previously formed sol an enclosure and at least one mould contained in the enclosure, the mould including at least one opening into the sol after filling; forming a sol-gel matrix in the enclosure from the sol; removing the mould with the sol-gel matrix contained in the mould from the enclosure; and forming a porous monolith from the sol-gel matrix contained in the mould, wherein the formation of the sol, the sol-gel matrix, and the porous monolith is performed by a sol-gel process.

IPC Classes  ?

• B01J 20/10 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material comprising silica or silicate
• B01D 15/10 - Selective adsorption, e.g. chromatography characterised by constructional or operational features
• B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
• B01J 20/283 - Porous sorbents based on silica
• B01J 20/30 - Processes for preparing, regenerating or reactivating

Abstract

The invention is a method for processing a calibration spectrum acquired by a spectrometric detector of X or gamma photons. The method comprises a taking into account of a parametric form of a calibration function, the calibration function linking the rank of an energy channel to an energy value. The method comprises a confrontation between the channels of the peaks of the calibration spectrum and emission energies of calibration isotopes. The confrontation makes it possible to define the values of the parameters of the calibration function.

IPC Classes  ?

• G01J 3/28 - Investigating the spectrum

Abstract

An assembly includes a stack of SOEC/SOFC solid oxide cells, the stack having a plurality of plates stacked one on top of the other, each plate having an outer lateral surface, the plurality of plates including at least a plurality of electrochemical cells, a plurality of interconnectors, and upper and lower end plates. At least two guiding elements are configured to guide the vertical stacking of at least some of the plates of the stack. The at least two guiding elements extend vertically in a vertical direction and bear against the outer lateral surface of each of the at least some of the plates.

IPC Classes  ?

• H01M 8/248 - Means for compression of the fuel cell stacks
• C25B 9/77 - Assemblies comprising two or more cells of the filter-press type having diaphragms
• C25B 13/02 - DiaphragmsSpacing elements characterised by shape or form
• H01M 8/0256 - Vias, i.e. connectors passing through the separator material
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
• H01M 8/2404 - Processes or apparatus for grouping fuel cells
• H01M 8/2432 - Grouping of unit cells of planar configuration

Abstract

The present invention relates to new glycomimetic molecules which selectively bind to the L-SIGN receptor, finding application in the medical field and, in particular, in the prevention and treatment of viral infections, in the immunotherapy of liver tumors and in the treatment of immune diseases.

IPC Classes  ?

• C07H 19/056 - Triazole or tetrazole radicals
• A61K 31/7056 - Compounds having saccharide radicals and heterocyclic rings having nitrogen as a ring hetero atom, e.g. nucleosides, nucleotides containing five-membered rings with nitrogen as a ring hetero atom
• A61K 31/7064 - Compounds having saccharide radicals and heterocyclic rings having nitrogen as a ring hetero atom, e.g. nucleosides, nucleotides containing six-membered rings with nitrogen as a ring hetero atom containing condensed or non-condensed pyrimidines

Abstract

A method comprising the following steps: a) bonding a handle substrate including a base and raised elements to a substrate of interest including a support substrate covered with a thin film, the thin film including a material sensitive to an etchant, whereby the thin film includes first areas not covered with the raised elements and second areas covered with the raised elements, b) performing an etching with the etchant to remove the material sensitive to the etchant present in the first areas, the second areas being protected during the etching, whereby the thin film is structured in the form of raised patterns, c) separating the handle substrate from the substrate of interest.

IPC Classes  ?

• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

Abstract

A pixel including a first node, a second node configured to receive a first DC potential, and a plurality of acquisition channels each including: a photodiode adapted to detect radiation in a first wavelength range; a capacitive element coupling the photodiode to the first node; and a resistive element coupling a first terminal of the photodiode to the second node.

IPC Classes  ?

• H04N 25/60 - Noise processing, e.g. detecting, correcting, reducing or removing noise
• H04N 25/77 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Abstract

A method for measuring relative concentrations of materials in a mixture includes providing an emission coil and at least one reception coil, providing a mixture with n materials having different magnetic susceptibilities, and introducing the mixture into the reception coil. Using a voltage generator the emission coil is supplied with at least one nonzero excitation frequency so as to generate an excitation magnetic field and the signal of the voltage induced in the reception coil is measured. Relative concentrations of the n materials are determined based on comparison between the overall susceptibility of the mixture as obtained through the voltage measurement and that of a reference mixture for which the relative concentrations of the n materials are known.

IPC Classes  ?

• G01N 27/72 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables

Abstract

The present electronic generator of modulated subcarrier pulse signals includes a module (15) for modulating a pulse train, the position and amplitude of which are controllable, forming a switching signal (S3); a switching module (16), connected to the output of the module (15) for modulating a pulse train, including at least one transistor (22), controlled by said switching signal (S3), a voltage-controlled frequency-locking oscillator (18) having a frequency-locking band around a free oscillation frequency controlled by a control voltage, connected to the output of the switching module (16), the switching module making possible the injection of a periodic pulse signal (S4) having a frequency spectrum including at least one frequency line within said frequency locking band. Such arrangement makes it possible to obtain, at the output of the oscillator, frequency-controlled, phase-controlled and amplitude-controlled modulated subcarrier pulsed signals (S5).

IPC Classes  ?

• H04L 25/49 - Transmitting circuitsReceiving circuits using code conversion at the transmitterTransmitting circuitsReceiving circuits using predistortionTransmitting circuitsReceiving circuits using insertion of idle bits for obtaining a desired frequency spectrumTransmitting circuitsReceiving circuits using three or more amplitude levels
• H04B 1/707 - Spread spectrum techniques using direct sequence modulation
• H04L 5/00 - Arrangements affording multiple use of the transmission path

Abstract

A circuit comprises first, second, and third nodes (2002, 2004, 2006) respectively receiving a reference potential, a first voltage, and a second voltage. A first NMOS transistor has its gate connected to the second node. A second NMOS transistor has its drain and its source respectively connected to the source of the first transistor and to the second node. A third NMOS transistor has its gate and its source respectively connected to the second and first nodes. A fourth PMOS transistor has its drain connected to the drain of the third transistor and to the gate of the second transistor, and its gate connected to the source of the first transistor. A resistive element connects the first transistor to the third node, another resistive element connecting the fourth transistor to the third node.

IPC Classes  ?

• H03K 17/22 - Modifications for ensuring a predetermined initial state when the supply voltage has been applied

Abstract

A method for assembling a battery including providing an end plate having at least one through cell for an accumulator and at least one adhesive injection orifice distant from the cell, the adhesive injection orifice being in fluidic communication via a supply channel with a recess of an inner wall of the cell, placing the accumulator in the cell, injecting adhesive through the injection orifice, the adhesive flowing in the channel up to the recess, the accumulator being bonded to the end plate by the adhesive contained in the recess.

IPC Classes  ?

• H01M 50/213 - Racks, modules or packs for multiple batteries or multiple cells characterised by their shape adapted for cells having curved cross-section, e.g. round or elliptic
• H01M 50/20 - MountingsSecondary casings or framesRacks, modules or packsSuspension devicesShock absorbersTransport or carrying devicesHolders

Abstract

A method comprising the following steps: a) Bonding a handle substrate including raised elements to a substrate of interest including a support substrate covered with a thin film including a material sensitive to an etchant, whereby the thin film includes first areas not covered with the raised elements and second areas covered with said elements, b) Placing into contact the obtained assembly with a solution including a hydrophobic agent, to cover the first areas with a hydrophobic film, c) Separating the two substrates, d) Placing into contact the substrate of interest with a solution containing the etchant, whereby the material sensitive to the etchant present in the second areas is etched and raised patterns are formed.

IPC Classes  ?

• H01L 21/321 - After-treatment
• H01L 21/311 - Etching the insulating layers
• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer

Abstract

A computer implemented method is provided for performing symbolic execution on a symbolic representation of a computer program comprising a sequence of software instructions represented at least by variables, memories and expressions. The method is operated on-the-fly and comprises for each software instruction of the computer program: analyzing an initial symbolic representation of a software instruction to determine if a simplification may be applied to any memory-access operation included in the initial symbolic representation of the software instruction; in case of determining a simplification, generating a simplified symbolic representation of the software instruction to replace the initial symbolic representation; and generating a new symbolic representation of the computer program with the simplified symbolic representation of the software instruction.

IPC Classes  ?

• G06F 8/41 - Compilation

Abstract

A power supply system adapted to provide a polyphase voltage and a DC voltage and including at least three modules, each module including a set of cells, each cell including at least one elementary power source, the set of cells including a first cell and a second cell, a polarity switching circuit of the module, an output allowing a phase of the power supply system to be generated, the polarity switching circuit being connected to two opposite poles of the two cells, respectively, a selection circuit selecting cells to be connected to the polarity switching circuit, and control circuits connecting two opposite poles of the two cells to a positive and a negative DC voltage output, respectively.

IPC Classes  ?

• H02J 4/00 - Circuit arrangements for mains or distribution networks not specified as ac or dc
• H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries

Abstract

A system is proposed for the selection of at least one frequency channel in an input signal. The system comprises: a gain block delivering H currents proportional to the input signal through a gain factor; and N processing paths for processing the currents. Each path comprises: one capacitor; and H branches, each branch being configured to provide, to the capacitor, a respective current, the H branches being configured for having the gain factors of the currents successively provided to the capacitor over a period TLO that are representative of a respective sampled waveform which is the H first samples of a circular permutation of a sampled pattern obtained by time shift by a multiple of a sampling period TLO/N. Each path comprises a reset switch, implemented in parallel of the capacitor, for resetting the voltage across the capacitor once per period TLO.

IPC Classes  ?

• H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
• H04B 1/16 - Circuits

Abstract

A method for manufacturing a first optoelectronic device operating at a wavelength λ1 and a second optoelectronic device operating at a wavelength λ2>λ1, the first device comprising a first stack comprising a first encapsulation layer of thickness e10 and layers of thickness eli (i=1 . . . n), and the second device comprising a second stack comprising a second encapsulation layer of thickness e20 and layers of thickness e2i (i=1 . . . n). The method includes forming the second stack by sizing the thicknesses e20 and e2i according to λ2, forming the first stack by sizing the thicknesses eli by homothety and adjusting the thickness e10 such that the stacks have the same height, and performing out one same technological step on the stacks.

IPC Classes  ?

• H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
• H01S 5/02 - Structural details or components not essential to laser action
• H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Abstract

A method for manufacturing disassemblable substrates, comprising: (a) providing a first substrate comprising implanted species forming a flat implantation zone and a proximal surface; a second substrate comprising a surface; (b) forming a series of cavities on the proximal surface of the first substrate and/or on the surface of the second substrate; (c) assembling the first and second substrates (1, 2) by direct bonding; and (d) applying a heat treatment to weaken the flat implantation zone. Further, the series of cavities being arranged in such a way as to allow direct bonding between the first and second substrates during step (c); and prevent thermal initiation of the splitting of the weakened flat implantation zone at the end of step (d).

IPC Classes  ?

• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

A method for manufacturing an optoelectronic device including an array of diodes and photoluminescent pads arranged opposite at least one diode, including making an electret layer over the array of diodes, by localized polarization or depolarization, optically, so as to form surface potential patterns; and making the photoluminescent pads, by contact of the electret layer with a colloidal solution containing photoluminescent particles, which are then deposited over the upper face of the electret layer opposite the predefined surface potential patterns, thereby forming the photoluminescent pads.

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

The invention relates to a process for transferring a thin layer to a carrier substrate, comprising: - joining a donor substrate (1) and the carrier substrate (2) by direct bonding of their respective front sides (1a, 2a) via a bonding interface (3), to form a bonded assembly (100) having an unbonded local region (31) within this bonding interface (3), the donor substrate (1) further comprising a buried fragile plane (11), - splitting along the buried fragile plane (11), the splitting being initiated in the unbonded local region (31) after growth of microcracks in said plane (11) by thermal activation, and leading to the transfer of a thin layer (10) from the donor substrate (1) to the carrier substrate (2). The process is noteworthy in that the unbonded local region (31) is generated by at least one rough region (31a) produced by scanning a laser beam over at least one of the front sides (1a, 2a) of the donor substrate (1) and carrier substrate (2) before they are joined, the scan covering an area of at least 100 microns by 100 microns and of at most 500 microns by 500 microns.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• H01L 21/762 - Dielectric regions

Abstract

The invention relates to a method for surface micro- or nano-structuring of a material, characterised in that it comprises an irradiation step (a) consisting in irradiating a localised surface zone of the material with a focused ionic gas beam, the beam being defined by: - a kinetic energy of the ions of between 5 and 30 keV for hydrogen ions, between 10 and 60 keV for helium ions or between 20 and 500 keV for ions having an atomic mass unit of greater than or equal to 12; - a flux set to a value of between 1013and 1018ions/cm2/s; and - a fluence having a value which is derived from a database establishing the link between the nature of the material, the type of ions used and the associated kinetic energy, and the value of the flux in order to obtain surface micro- or nano-structuring of the material, consisting of one or more micro- or nano-structures in the form of sealed hollow blisters.

IPC Classes  ?

• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate

Abstract

The invention relates to a photovoltaic module, comprising a stack including sequentially, in a so-called stacking direction, at least: a so-called transparent layer (FAV) in the visible range; a first encapsulation layer (EFAV); a set of photovoltaic cells; a second encapsulation layer (EFAR); and a cellular layer (CA); the second encapsulation layer (EFAR) having an inner face facing the set of photovoltaic cells and an outer face facing the cellular layer (CA); the cellular layer having a material recess so as to create an edge of the cellular layer, the edge forming a through-cavity; and at least one of the first and second encapsulation layers forming a seal between the edge of the cellular layer and the transparent layer.

IPC Classes  ?

• H01L 31/048 - Encapsulation of modules
• H01L 31/049 - Protective back sheets