Abstract

Provided herein is a silicon-carbon material comprising silicon and preparation thereof, for use as an anode in a lithium-ion battery.

IPC Classes  ?

• H01M 4/133 - Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
• H01M 4/134 - Electrodes based on metals, Si or alloys
• H01M 4/1393 - Processes of manufacture of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
• H01M 4/1395 - Processes of manufacture of electrodes based on metals, Si or alloys
• H01M 4/38 - Selection of substances as active materials, active masses, active liquids of elements or alloys
• H01M 4/583 - Carbonaceous material, e.g. graphite-intercalation compounds or CFx
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
• H01M 10/02 - Details
• H01M 10/04 - Construction or manufacture in general
• H01M 10/052 - Li-accumulators

Abstract

Described herein are devices and methods for the production of single crystal boules which utilize in-situ generation of polycrystalline precursors, thereby reducing both energy on monetary costs. A single float zone furnace is used to both generate the polycrystalline starting material from gases and transform the polycrystalline material into a single crystal boule via heating.

IPC Classes  ?

• C30B 13/34 - Single-crystal growth by zone-meltingRefining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
• C30B 15/32 - Seed holders, e.g. chucks
• C30B 25/08 - Reaction chambersSelection of materials therefor
• C30B 25/10 - Heating of the reaction chamber or the substrate
• C30B 25/16 - Controlling or regulating
• C30B 29/06 - Silicon
• C30B 29/08 - Germanium
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A method of removing surface carbon contamination from polycrystalline silicon comprises providing a polycrystalline silicon feed stream having surface carbon contamination, subjecting the polycrystalline silicon to a high velocity fluid selected from gas, gas/liquid mixtures, gas/solid mixtures and gas/solid/liquid mixtures to form a product stream comprising polycrystalline silicon having surface carbon in an amount of less than 200 parts per billion by weight based on weight of the polycrystalline silicon product and/or a reduction in surface carbon contamination of at least 20%. A system for conducting the method comprises an enclosure, a conveyer for moving a polycrystalline silicon feed stream through the enclosure, at least one stream of a high velocity fluid passing through outlets in the enclosure and directed at the feed stream, an ionizing source in the enclosure or integrated with the at least one stream of high velocity fluid, and an exhaust system for the enclosure.

IPC Classes  ?

• C01B 33/037 - Purification
• B08B 5/02 - Cleaning by the force of jets, e.g. blowing-out cavities

Abstract

A polysilicon chip reclamation assembly includes a polysilicon cleaning apparatus configured to clean a plurality of bodies of polysilicon. Also included is a plurality of polysilicon chips generated from the bodies of polysilicon during cleaning thereof, wherein each of the plurality of polysilicon chips has a longest dimensional length ranging from 0.1 mm to 25.0 mm. Further included is a polysilicon apparatus drain line configured to route the plurality of polysilicon chips from the polysilicon cleaning apparatus to a main chip drain line, wherein the main chip drain line is oriented at a downward slope away from the polysilicon apparatus drain line. Yet further included is a fluid source fluidly coupled to the main chip drain line and configured to inject a fluid into the main chip drain line to drive the plurality of polysilicon chips through the main chip drain line.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
• B08B 3/14 - Removing waste, e.g. labels, from cleaning liquid
• C30B 29/06 - Silicon
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Abstract

A process for preparing a product including a monohydrogentrihalosilane is disclosed. The process includes the steps of: 1) initially charging a reactor with a contact mass including both fresh silicon and recycled contact mass, where the recycled contact mass is obtained from during or after a production phase of an inorganic Direct Process reaction for production of a monohydrogentrihalosilane; and thereafter 2) feeding to the reactor a hydrogen halide and additional fresh silicon, thereby forming the product.

IPC Classes  ?

• C01B 33/107 - Halogenated silanes
• C08G 77/04 - Polysiloxanes
• B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes
• B01J 23/72 - Copper

Abstract

A method of reducing contamination in a silicon product includes: moving silicon pieces along a conveyance system, wherein the conveyance system comprises a liner having a polished surface finish with a surface roughness of less than or equal to 12 microinches; and moving the silicon pieces across the conveyance system, wherein the silicon pieces contain a reduced number of impurities as compared to silicon pieces in contact with a liner having an unpolished surface. A crushing tool includes: crushing tool elements configured to crush silicon into fragments, wherein the crushing tool elements comprise a surface comprising a polished surface finish with a surface roughness of less than or equal to 12 microinches. A conveyance system includes: a first conveyor discharged onto a second conveyor; wherein the first conveyor comprises a first liner and wherein the second conveyor comprises a second liner.

IPC Classes  ?

• B65G 11/16 - Interior surfacesLinings
• B65G 15/48 - Belts or like endless load-carriers metallic
• B29D 29/06 - Conveyor belts
• B02C 19/00 - Other disintegrating devices or methods
• B65G 37/00 - Combinations of mechanical conveyors of the same kind, or of different kinds, of interest apart from their application in particular machines or use in particular manufacturing processes
• B02C 4/12 - Crushing or disintegrating by roller mills with a roller co-operating with a stationary member in the form of a plate

Abstract

A method of improving polycrystalline silicon growth in a reactor, including: introducing a chlorosilane feed composition comprising trichlorosilane and dichlorosilane into a deposition chamber, wherein the deposition chamber contains a substrate; blending the chlorosilane feed composition with hydrogen gas to form a feed composition; adjusting a baseline flow of chlorosilane and hydrogen gas into the deposition chamber to achieve a pre-determined total flow and a pre-determined chlorosilane feed composition set point; applying pressure to the deposition chamber and energy to the substrate in the deposition chamber to form polycrystalline silicon; measuring the amount of dichlorosilane present in the chlorosilane feed composition and determining an offset value from a target value of dichlorosilane present in the chlorosilane feed composition; adjusting the chlorosilane feed composition set point by an amount inversely proportional to the dichlorosilane offset value; and depositing the formed polycrystalline silicon onto the substrate.

IPC Classes  ?

• C23C 16/24 - Deposition of silicon only
• C23C 16/52 - Controlling or regulating the coating process
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

A susceptor arrangement for a reactor includes a heater element configured to heat a process gas to be used in the reactor. Also included is an inner susceptor portion located radially inwardly of the heater element and configured to route the process gas therein along a radially inner process gas path. Further included is an outer susceptor portion located radially outwardly of the heater element and configured to route the process gas therein along a radially outer process gas path, wherein the radially inner process gas path and the radially outer process gas path are fluidly coupled and substantially fluidly isolated from the heater element.

IPC Classes  ?

• H05B 3/10 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
• C01B 33/107 - Halogenated silanes
• H05B 3/14 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
• H05B 3/42 - Heating elements having the shape of rods or tubes non-flexible

Abstract

A heat exchanger transfers heat between first and second material streams. The heat exchanger includes a body portion including vent channels configured to pass the first material stream through the body portion. The body portion further includes feed channels configured to pass the second material stream through the body portion. The feed channels are spaced from and in thermal communication with the vent channels such that at least one of the first and second material streams transfer heat with another one of the first and second material streams. Each of the feed channels has an inlet having a crosssectional area with the cross-sectional area of the inlet of at least one of the feed channels different than the cross-sectional area of the inlet of another one of the feed channels for normalizing a flow rate of the second material stream through the feed channels.

IPC Classes  ?

• F28F 7/02 - Blocks traversed by passages for heat-exchange media
• F28F 9/02 - Header boxesEnd plates
• F28F 13/08 - Arrangements for modifying heat transfer, e.g. increasing, decreasing by affecting the pattern of flow of the heat-exchange media by varying the cross-section of the flow channels

Abstract

A polysilicon chip reclamation assembly includes a polysilicon cleaning apparatus configured to clean a plurality of bodies of polysilicon. Also included is a plurality of polysilicon chips generated from the bodies of polysilicon during cleaning thereof, wherein each of the plurality of polysilicon chips has a longest dimensional length ranging from 0.1 mm to 25.0 mm. Further included is a polysilicon apparatus drain line configured to route the plurality of polysilicon chips from the polysilicon cleaning apparatus to a main chip drain line, wherein the main chip drain line is oriented at a downward slope away from the polysilicon apparatus drain line. Yet further included is a fluid source fluidly coupled to the main chip drain line and configured to inject a fluid into the main chip drain line to drive the plurality of polysilicon chips through the main chip drain line.

IPC Classes  ?

• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements

Abstract

A fluidized bed reactor includes a gas distributor, a tapered section above the gas distributor, and an expanded head above the tapered section. The gas distributor defines a plurality of inlets surrounding a product withdrawal tube, which extends away from the fluidized bed reactor. The fluidized bed reactor is useful in a process for fluidizing relatively large particles, such as Geldart Group B particles and/or Geldart Group D particles, where said particles are in a bubbling fluidized bed residing, in whole or in part, in the tapered section. The fluidized bed reactor and process may be used for manufacturing polycrystalline silicon.

IPC Classes  ?

• G01N 31/00 - Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroupsApparatus specially adapted for such methods
• B01J 8/24 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique
• B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
• B01J 8/44 - Fluidisation grids
• C01B 33/027 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
• C01B 33/03 - Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
• G01N 15/02 - Investigating particle size or size distribution

Goods & Services

Polycrystalline silicon, polysilicon, silanes and silicon source chemicals used in manufacturing silicone ingots and wafers for semiconductor devices, for solar devices, for electronic devices, for mono-crystal solar cells, and for single-crystal solar cells, all the abovementioned goods not to be used in the printing industry.

Goods & Services

Polycrystalline silicon, polysilicon, silanes and silicon source chemicals used in manufacturing silicone ingots and wafers for semiconductor devices, for solar devices, for electronic devices, for mono-crystal solar cells, and for single-crystal solar cells.

Goods & Services

Polycrystalline silicon, polysilicon, silanes, and silicon source chemicals used in manufacturing silicone ingots and wafers for semiconductor devices, for solar devices, for electronic devices, for mono-crystal solar cells, and for single-crystal solar cells

Goods & Services

Chemicals used in the manufacturing of semiconductor devices such as transistors, rectifiers, integrated circuits and other electronic devices, particularly polycrystalline silicon and silicon source chemicals. Semiconductor devices such as transistors, rectifiers, integrated circuits, and other electronic devices, particularly made from polycrystalline silicon and silicon source chemicals.

Goods & Services

Chemicals used in the manufacturing of semiconductor devices such as transistors, rectifiers, integrated circuits and other electronic devices, particularly polycrystalline silicon and silicon source chemicals. Semiconductor devices such as transistors, rectifiers, integrated circuits, and other electronic devices, particularly made from polycrystalline silicon and silicon source chemicals.

Abstract

A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

IPC Classes  ?

• C30B 29/06 - Silicon

Goods & Services

POLYCRYSTALLINE SILICON AND SILICON SOURCE CHEMICALS USED IN MANUFACTURING SEMICONDUCTOR DEVICES SUCH AS TRANSISTORS, RECTIFIERS, INTEGRATED CIRCUITS AND OTHER ELECTRONIC DEVICES

Goods & Services

POLYCRYSTALLINE SILICON AND SILICON SOURCE CHEMICALS USED IN MANUFACTURING SEMICONDUCTOR DEVICES SUCH AS TRANSISTORS, RECTIFIERS, INTEGRATED CIRCUITS AND OTHER ELECTRONIC DEVICES

Goods & Services

POLYCRYSTALLINE SILICON AND SILICON SOURCE CHEMICALS USED IN MANUFACTURING SEMICONDUCTOR DEVICES SUCH AS TRANSISTORS, RECTIFIERS, INTEGRATED CIRCUITS AND OTHER ELECTRONIC DEVICES