Described herein are devices and methods for the production of single crystal boules which utilize in-situ generation of polycrystalline precursors, thereby reducing both energy on monetary costs. A single float zone furnace is used to both generate the polycrystalline starting material from gases and transform the polycrystalline material into a single crystal boule via heating.
C30B 13/34 - Croissance des monocristaux par fusion de zoneAffinage par fusion de zone caractérisée par le germe, p. ex. par son orientation cristallographique
A method of removing surface carbon contamination from polycrystalline silicon comprises providing a polycrystalline silicon feed stream having surface carbon contamination, subjecting the polycrystalline silicon to a high velocity fluid selected from gas, gas/liquid mixtures, gas/solid mixtures and gas/solid/liquid mixtures to form a product stream comprising polycrystalline silicon having surface carbon in an amount of less than 200 parts per billion by weight based on weight of the polycrystalline silicon product and/or a reduction in surface carbon contamination of at least 20%. A system for conducting the method comprises an enclosure, a conveyer for moving a polycrystalline silicon feed stream through the enclosure, at least one stream of a high velocity fluid passing through outlets in the enclosure and directed at the feed stream, an ionizing source in the enclosure or integrated with the at least one stream of high velocity fluid, and an exhaust system for the enclosure.
A polysilicon chip reclamation assembly includes a polysilicon cleaning apparatus configured to clean a plurality of bodies of polysilicon. Also included is a plurality of polysilicon chips generated from the bodies of polysilicon during cleaning thereof, wherein each of the plurality of polysilicon chips has a longest dimensional length ranging from 0.1 mm to 25.0 mm. Further included is a polysilicon apparatus drain line configured to route the plurality of polysilicon chips from the polysilicon cleaning apparatus to a main chip drain line, wherein the main chip drain line is oriented at a downward slope away from the polysilicon apparatus drain line. Yet further included is a fluid source fluidly coupled to the main chip drain line and configured to inject a fluid into the main chip drain line to drive the plurality of polysilicon chips through the main chip drain line.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
B08B 3/08 - Nettoyage impliquant le contact avec un liquide le liquide ayant un effet chimique ou dissolvant
B08B 3/14 - Enlèvement des déchets, p. ex. des étiquettes, se trouvant dans le liquide de nettoyage
C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
A process for preparing a product including a monohydrogentrihalosilane is disclosed. The process includes the steps of: 1) initially charging a reactor with a contact mass including both fresh silicon and recycled contact mass, where the recycled contact mass is obtained from during or after a production phase of an inorganic Direct Process reaction for production of a monohydrogentrihalosilane; and thereafter 2) feeding to the reactor a hydrogen halide and additional fresh silicon, thereby forming the product.
A method of reducing contamination in a silicon product includes: moving silicon pieces along a conveyance system, wherein the conveyance system comprises a liner having a polished surface finish with a surface roughness of less than or equal to 12 microinches; and moving the silicon pieces across the conveyance system, wherein the silicon pieces contain a reduced number of impurities as compared to silicon pieces in contact with a liner having an unpolished surface. A crushing tool includes: crushing tool elements configured to crush silicon into fragments, wherein the crushing tool elements comprise a surface comprising a polished surface finish with a surface roughness of less than or equal to 12 microinches. A conveyance system includes: a first conveyor discharged onto a second conveyor; wherein the first conveyor comprises a first liner and wherein the second conveyor comprises a second liner.
B02C 19/00 - Autres dispositifs ou procédés de désagrégation
B65G 37/00 - Combinaisons de transporteurs mécaniques de même type ou de types différents sauf en ce qui concerne leur application dans des machines particulières ou leur emploi dans des procédés particuliers de fabrication
B02C 4/12 - Broyage ou désagrégation par broyeurs cylindriques par une meule coopérant avec un organe fixe en forme d'assiette
7.
Dichlorosilane compensating control strategy for improved polycrystalline silicon growth
A method of improving polycrystalline silicon growth in a reactor, including: introducing a chlorosilane feed composition comprising trichlorosilane and dichlorosilane into a deposition chamber, wherein the deposition chamber contains a substrate; blending the chlorosilane feed composition with hydrogen gas to form a feed composition; adjusting a baseline flow of chlorosilane and hydrogen gas into the deposition chamber to achieve a pre-determined total flow and a pre-determined chlorosilane feed composition set point; applying pressure to the deposition chamber and energy to the substrate in the deposition chamber to form polycrystalline silicon; measuring the amount of dichlorosilane present in the chlorosilane feed composition and determining an offset value from a target value of dichlorosilane present in the chlorosilane feed composition; adjusting the chlorosilane feed composition set point by an amount inversely proportional to the dichlorosilane offset value; and depositing the formed polycrystalline silicon onto the substrate.
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
8.
Susceptor arrangement for a reactor and method of heating a process gas for a reactor
A susceptor arrangement for a reactor includes a heater element configured to heat a process gas to be used in the reactor. Also included is an inner susceptor portion located radially inwardly of the heater element and configured to route the process gas therein along a radially inner process gas path. Further included is an outer susceptor portion located radially outwardly of the heater element and configured to route the process gas therein along a radially outer process gas path, wherein the radially inner process gas path and the radially outer process gas path are fluidly coupled and substantially fluidly isolated from the heater element.
H05B 3/14 - Éléments chauffants caractérisés par la composition ou la nature des matériaux ou par la disposition du conducteur caractérisés par la composition ou la nature du matériau conducteur le matériau étant non métallique
H05B 3/42 - Éléments chauffants ayant la forme de tiges ou de tubes non flexibles
A heat exchanger transfers heat between first and second material streams. The heat exchanger includes a body portion including vent channels configured to pass the first material stream through the body portion. The body portion further includes feed channels configured to pass the second material stream through the body portion. The feed channels are spaced from and in thermal communication with the vent channels such that at least one of the first and second material streams transfer heat with another one of the first and second material streams. Each of the feed channels has an inlet having a crosssectional area with the cross-sectional area of the inlet of at least one of the feed channels different than the cross-sectional area of the inlet of another one of the feed channels for normalizing a flow rate of the second material stream through the feed channels.
F28F 7/02 - Blocs traversés par des passages pour sources de potentiel calorifique
F28F 9/02 - Boîtes de distributionPlaques d'extrémité
F28F 13/08 - Dispositions pour modifier le transfert de chaleur, p. ex. accroissement, diminution en affectant le mode d'écoulement des sources de potentiel calorifique en faisant varier la section transversale des canaux d'écoulement
10.
POLYSILICON CHIP RECLAMATION ASSEMBLY AND METHOD OF RECLAIMING POLYSILICON CHIPS FROM A POLYSILICON CLEANING APPARATUS
A polysilicon chip reclamation assembly includes a polysilicon cleaning apparatus configured to clean a plurality of bodies of polysilicon. Also included is a plurality of polysilicon chips generated from the bodies of polysilicon during cleaning thereof, wherein each of the plurality of polysilicon chips has a longest dimensional length ranging from 0.1 mm to 25.0 mm. Further included is a polysilicon apparatus drain line configured to route the plurality of polysilicon chips from the polysilicon cleaning apparatus to a main chip drain line, wherein the main chip drain line is oriented at a downward slope away from the polysilicon apparatus drain line. Yet further included is a fluid source fluidly coupled to the main chip drain line and configured to inject a fluid into the main chip drain line to drive the plurality of polysilicon chips through the main chip drain line.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
11.
Tapered fluidized bed reactor and process for its use
A fluidized bed reactor includes a gas distributor, a tapered section above the gas distributor, and an expanded head above the tapered section. The gas distributor defines a plurality of inlets surrounding a product withdrawal tube, which extends away from the fluidized bed reactor. The fluidized bed reactor is useful in a process for fluidizing relatively large particles, such as Geldart Group B particles and/or Geldart Group D particles, where said particles are in a bubbling fluidized bed residing, in whole or in part, in the tapered section. The fluidized bed reactor and process may be used for manufacturing polycrystalline silicon.
G01N 31/00 - Recherche ou analyse des matériaux non biologiques par l'emploi des procédés chimiques spécifiés dans les sous-groupesAppareils spécialement adaptés à de tels procédés
B01J 8/24 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés les particules étant fluidisées selon la technique du "lit fluidisé"
B01J 8/18 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés les particules étant fluidisées
C01B 33/027 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice
C01B 33/03 - Préparation par décomposition ou réduction de composés de silicium gazeux ou vaporisés autres que la silice ou un matériau contenant de la silice par décomposition d'halogénures de silicium ou de silanes halogénés ou réduction de ceux-ci avec de l'hydrogène comme seul agent réducteur
G01N 15/02 - Recherche de la dimension ou de la distribution des dimensions des particules
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Polycrystalline silicon, polysilicon, silanes and silicon source chemicals used in manufacturing silicone ingots and wafers for semiconductor devices, for solar devices, for electronic devices, for mono-crystal solar cells, and for single-crystal solar cells, all the abovementioned goods not to be used in the printing industry.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Polycrystalline silicon, polysilicon, silanes and silicon source chemicals used in manufacturing silicone ingots and wafers for semiconductor devices, for solar devices, for electronic devices, for mono-crystal solar cells, and for single-crystal solar cells.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Polycrystalline silicon, polysilicon, silanes, and silicon source chemicals used in manufacturing silicone ingots and wafers for semiconductor devices, for solar devices, for electronic devices, for mono-crystal solar cells, and for single-crystal solar cells
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
09 - Appareils et instruments scientifiques et électriques
Produits et services
Chemicals used in the manufacturing of semiconductor devices
such as transistors, rectifiers, integrated circuits and
other electronic devices, particularly polycrystalline
silicon and silicon source chemicals. Semiconductor devices such as transistors, rectifiers,
integrated circuits, and other electronic devices,
particularly made from polycrystalline silicon and silicon
source chemicals.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
09 - Appareils et instruments scientifiques et électriques
Produits et services
Chemicals used in the manufacturing of semiconductor devices
such as transistors, rectifiers, integrated circuits and
other electronic devices, particularly polycrystalline
silicon and silicon source chemicals. Semiconductor devices such as transistors, rectifiers,
integrated circuits, and other electronic devices,
particularly made from polycrystalline silicon and silicon
source chemicals.
17.
Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
POLYCRYSTALLINE SILICON AND SILICON SOURCE CHEMICALS USED IN MANUFACTURING SEMICONDUCTOR DEVICES SUCH AS TRANSISTORS, RECTIFIERS, INTEGRATED CIRCUITS AND OTHER ELECTRONIC DEVICES
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
POLYCRYSTALLINE SILICON AND SILICON SOURCE CHEMICALS USED IN MANUFACTURING SEMICONDUCTOR DEVICES SUCH AS TRANSISTORS, RECTIFIERS, INTEGRATED CIRCUITS AND OTHER ELECTRONIC DEVICES
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
POLYCRYSTALLINE SILICON AND SILICON SOURCE CHEMICALS USED IN MANUFACTURING SEMICONDUCTOR DEVICES SUCH AS TRANSISTORS, RECTIFIERS, INTEGRATED CIRCUITS AND OTHER ELECTRONIC DEVICES
