The invention relates to a method for producing an interconnection comprising a via (V) extending through a substrate (1), said method successively comprising: (a) the deposition of a layer (11) of titanium nitride or tantalum nitride on a main surface (1A) of the substrate and on the inner surface (10A, 10B) of at least one hole (10) extending into at least part of the thickness of said substrate; (b) the deposition of a layer (12) of copper on said layer (11) of titanium nitride or tantalum nitride; and (c) the filling of the hole (10) with copper, said method being characterized in that, during step (a), the substrate (1) is arranged in a first deposition chamber (100), and in that said step (a) comprises the injection of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence, and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being dephased.
H01L 21/44 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
2.
Method for depositing an insulating material into a via
A method for depositing a layer of a material onto a substrate, comprising: one gas-phase injection of a first chemical species with a precursor of such insulating material, into a deposition chamber of a chemical vapor deposition reactor, through a first injection path, according to a first pulse sequence; one gas-phase injection of a second chemical species with a reactant adapted to react with such precursor, into the deposition chamber, through a second injection path, according to a second pulse sequence which is phase-shifted relative to the first pulse sequence; one sequential generation of a plasma of the first chemical species and/or the second chemical species during at least one pulse of at least one of the first and second sequences, with such plasma being generated from a high frequency (HF) plasma source and a low frequency (LF) plasma source applied to the first and second injection paths, the low frequency (LF) plasma source power on the high frequency (HF) plasma source power ratio being above 1.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
3.
Treatment chamber for a chemical vapour deposition (CVD) reactor and thermalization process carried out in this chamber
Treatment chamber (C) for a chemical vapor deposition (CVD) reactor, comprising, within a body (B) defining an enclosure (E) under partial vacuum, a system (3) for injecting reactive species with a view to being deposited on a substrate (8) placed on a support element (5), and a thermal control system (2) for regulating the temperature of the injection system (3) or keeping it substantially constant, this thermal control system (2) having an interface zone (ZI) with the injection system (3). The treatment chamber (C) further comprises, in the interface zone (ZI), at least one thermal transfer zone (ZT) that is (i) insulated from the enclosure under partial vacuum (E) by an insulating barrier to the pressure and to the diffusion of contaminating species and (ii) filled with a thermal interface material (10). Application for carrying out CVD depositions, especially pulsed CVD depositions.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
4.
METHOD FOR DEPOSITING AN INSULATING MATERIAL INTO A VIA
A method for depositing a layer (4, 5, 6) of a material onto a substrate (20), comprising: -one gas-phase injection of a first chemical species with a precursor of such insulating material, into a deposition chamber of a chemical vapor deposition reactor, through a first injection path, according to a first pulse sequence; -one gas-phase injection of a second chemical species with a reactant adapted to react with such precursor, into the deposition chamber, through a second injection path, according to a second pulse sequence which is phase-shifted relative to the first pulse sequence; -one sequential generation of a plasma of the first chemical species and/or the second chemical species during at least one pulse of at least one of the first and second sequences, with such plasma being generated from a high frequency (HF) plasma source and a low frequency (LF) plasma source applied to the first and second injection paths, the low frequency (LF) plasma source power on the high frequency (HF) plasma source power ratio being above 1.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
5.
REACTOR DEVICE AND METHOD FOR PRODUCING THIN LAYERS, IMPLEMENTING A SERIES OF DEPOSITION STEPS, AND USES OF THIS METHOD
A depositing method comprising sequential implementation of at least two types of deposition from among an ALD type deposition and a pulsed CVD type deposition and a CVD type deposition. Each deposition optionally can be assisted by plasma. The various depositions are preferably carried out in the same chamber, allowing the various types of deposition to be implemented. The deposition sequences are carried out so as to obtain specific layer properties such as, for example, conformity with a determined value, a primer layer of specific quality or a barrier layer of specific quality. Use thereof, particularly for the production of interconnection holes (vias).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
6.
TREATMENT CHAMBER FOR A CHEMICAL VAPOR DEPOSITION (CVD) REACTOR AND THERMALIZATION PROCESS CARRIED OUT IN THIS CHAMBER
Treatment chamber (C) for a chemical vapor deposition (CVD) reactor, comprising, within a body (B) defining an enclosure (E) under partial vacuum, a system (3) for injecting reactive species with a view to being deposited on a substrate (8) placed on a support element (5), and a thermal control system (2) for regulating the temperature of the injection system (3) or keeping it substantially constant, this thermal control system (2) having an interface zone (ZI) with the injection system (3). The treatment chamber (C) further comprises, in the interface zone (ZI), at least one thermal transfer zone (ZT) that is (i) insulated from the enclosure under partial vacuum (E) by an insulating barrier to the pressure and to the diffusion of contaminating species and (ii) filled with a thermal interface material (10). Application for carrying out CVD depositions, especially pulsed CVD depositions.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
7.
DEVICE FOR CONVEYING A GAS INTO A CHEMICAL VAPOUR DEPOSITION REACTOR
The present invention concerns a gas circulation device (1) for conveying a gas into a chemical vapour deposition reactor, comprising a conduit (2) with a first end (4) intended to open into said reactor, being polarised at a radiofrequency potential (V) and a second end (3) electrically polarised at a reference potential (V0), the device being characterised in that it further comprises a means (10a-10e) for applying potential for locally applying at least one determined electrical potential to the conduit (2) between the first and the second end, so as to locally polarise the gas in said conduit at an intermediate electrical potential between the radiofrequency potential and the reference potential.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
The present invention concerns a method for injecting chemical species in the gas phase into a deposition chamber (30) of a chemical vapour deposition reactor comprising: - A) injecting a first chemical species in the gas phase into the deposition chamber via a first injection channel (40) according to a first pulse sequence; - B) injecting a second chemical species in the gas phase into the deposition chamber via a second injection channel (50) according to a second pulse sequence out of phase with respect to the first pulse sequence; said method being characterised by the generation, sequentially, of a plasma of the first chemical species and/or of the second chemical species during at least one pulse of at least one of the sequences A) and B).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
9.
METHOD FOR PRODUCING AN INTERCONNECTION COMPRISING A VIA EXTENDING THROUGH A SUBSTRATE
The invention relates to a method for producing an interconnection comprising a via (V) extending through a substrate (1), said method successively comprising: (a) the deposition of a layer (11) of titanium nitride or tantalum nitride on a main surface (1A) of the substrate and on the inner surface (10A, 10B) of at least one hole (10) extending into at least part of the thickness of said substrate; (b) the deposition of a layer (12) of copper on said layer (11) of titanium nitride or tantalum nitride; and (c) the filling of the hole (10) with copper, said method being characterised in that, during step (a), the substrate (1) is arranged in a first deposition chamber (100), and in that said step (a) comprises the injection of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence, and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being dephased.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
10.
METHOD FOR REMOVING A METAL DEPOSIT ARRANGED ON A SURFACE IN A CHAMBER
The invention relates to a method for removing a metal deposit (2) arranged on a surface (5) in a chamber (1), said method including repeatedly performing a sequence including: a) a first phase of injecting chemical species suitable for oxidising said metal deposit (2); and b) a second phase of injecting chemical species suitable for volatilising the oxidised metal deposit, said second phase b) being performed after the first phase a).
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass
C07C 45/00 - Preparation of compounds having C=O groups bound only to carbon or hydrogen atomsPreparation of chelates of such compounds
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23G 5/00 - Cleaning or de-greasing metallic material by other methodsApparatus for cleaning or de-greasing metallic material with organic solvents
C23F 1/00 - Etching metallic material by chemical means
C07C 49/167 - Saturated compounds containing keto groups bound to acyclic carbon atoms containing halogen containing only fluorine as halogen
C07C 45/00 - Preparation of compounds having C=O groups bound only to carbon or hydrogen atomsPreparation of chelates of such compounds
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23G 5/00 - Cleaning or de-greasing metallic material by other methodsApparatus for cleaning or de-greasing metallic material with organic solvents
The present invention relates to a method for producing a layer (2) of aluminum oxide and/or aluminum nitride (Al2O3, or AIN) on a substrate (1), said method comprising a sequence of consecutive steps a) and b) according to which: a) a basic layer of aluminum (21, 22) having a thickness between 5 and 25 nm is deposited on the substrate (1) in a deposition chamber (10), b) the substrate (1) is moved into a treatment chamber (20) separate from the deposition chamber (10), in which the basic layer of aluminum (21, 22) is oxidized or nitrided to produce a basic layer of aluminum oxide or aluminum nitride (21' 22'). Said sequence of consecutive steps is repeated in a loop until said layer of aluminum oxide and/or aluminum nitride (2) is obtained by stacking the consecutive layers of aluminum oxide and aluminum nitride (21' 22').
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The invention relates to a method for removing a metal deposit placed on a surface in a chamber. Said method includes the following steps: a) a step of oxidizing the metal deposit; b) a step of injecting chemical species that are suitable for volatilizing the oxidized metal deposit, said Step b) being at least partially implemented during Step a). Said removal method is characterized in that, in Step b), the chemical species are injected according to a sequence of pulses.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
C23G 5/00 - Cleaning or de-greasing metallic material by other methodsApparatus for cleaning or de-greasing metallic material with organic solvents
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C07C 45/00 - Preparation of compounds having C=O groups bound only to carbon or hydrogen atomsPreparation of chelates of such compounds
A reactor device for chemical vapor deposition comprises a reaction chamber having a purge gas inlet. A gas discharge channel is linked to the reaction chamber via a circumferential opening in the inner wall of the chamber. The reaction chamber is arranged such that a purge gas stream flows from the purge gas inlet to the discharge channel. The inner wall of the reaction chamber comprises means for exchanging heat with the purge gas, for example, fins.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
15.
Device and process for chemical vapor phase treatment
Device for treating substrates, comprising a changer having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall of the chamber provided with a plurality of first channels connected to a first inlet and a plurality of second channels connected to a second inlet, the first and second channels opening into the chamber and being regularly distributed in the upper wall, a heating element provided above the upper wall and a gas discharge ring provided between the upper wall and the substrate support, the upper wall begin electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C 16/503 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
C23F 1/00 - Etching metallic material by chemical means
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
C23C 16/22 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
patents
