JSR Corporation

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G03F 7/004 - Photosensitive materials 560
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H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or 307
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01 - Chemical and biological materials for industrial, scientific and agricultural use 105
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1.

RESIST PATTERN FORMATION METHOD

      
Application Number 19092092
Status Pending
Filing Date 2025-03-27
First Publication Date 2025-07-10
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A method for forming a resist pattern, includes: forming a metal-containing resist film directly or indirectly on a substrate; laminating a protective film on the metal-containing resist film by applying a composition for forming a protective film; exposing to light the metal-containing resist film on which the protective film is laminated; and removing a portion of the exposed metal-containing resist film to form a pattern.

IPC Classes  ?

  • G03F 7/16 - Coating processesApparatus therefor
  • G03F 7/004 - Photosensitive materials
  • G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/32 - Liquid compositions therefor, e.g. developers

2.

METHOD FOR MANUFACTURING GEOPOLYMER FOAM

      
Application Number 18851423
Status Pending
Filing Date 2023-03-30
First Publication Date 2025-07-10
Owner JSP CORPORATION (Japan)
Inventor
  • Noro, Jinichiro
  • Naito, Naoki

Abstract

A method for producing a geopolymer foam, comprising obtaining a reaction slurry containing aluminosilicate, alkali metal silicate, aggregate, and water, adding a foaming agent to the reaction slurry to form a foaming slurry, and heating the foaming slurry, wherein the aggregate used is mica with an average particle size of 50 to 500 μm and a volume fraction (X) of particles with a particle size of 10 μm or less of 3% or less, and wherein the viscosity of the reaction slurry at 23° C. is 3000 to 15000 mPa·s.

IPC Classes  ?

  • C04B 28/00 - Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements
  • C04B 14/20 - MicaVermiculite
  • C04B 38/02 - Porous mortars, concrete, artificial stone or ceramic warePreparation thereof by adding chemical blowing agents

3.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

      
Application Number JP2024041546
Publication Number 2025/142242
Status In Force
Filing Date 2024-11-22
Publication Date 2025-07-03
Owner JSR CORPORATION (Japan)
Inventor
  • Omiya, Takuya
  • Nishikori, Katsuaki
  • Okumura, Takeshi
  • Tsuji, Takashi
  • Ishikawa, Hiroki

Abstract

A polymer containing a structural unit represented by formula (1) is included in this radiation-sensitive composition. In formula (1), R1is a hydrogen atom, a fluoro group, a methyl group, or a trifluoromethyl group. Ar1is a group obtained by removing (a+2) hydrogen atoms from an aromatic ring. R233 -or COO-. Provided that, R2is bonded to an atom adjacent to the bonding site with the main chain or is bonded to an atom also adjacent to an atom adjacent to the bonding site with the main chain among the atoms constituting the aromatic ring in Ar1. R3is a substituent. Mb+ is a b-valent cation.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 246/00 - Copolymers in which the nature of only the monomers in minority is defined
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

4.

EXPANDED BEADS, AND EXPANDED BEAD MOLDED BODY

      
Application Number 18850646
Status Pending
Filing Date 2023-02-28
First Publication Date 2025-06-26
Owner JSP Corporation (Japan)
Inventor Kitahara, Taizo

Abstract

An expanded bead containing a linear low-density polyethylene as a base resin, wherein the linear low-density polyethylene has a biomass degree of 40% or more as measured according to ASTM D 6866; the expanded bead has a crystal structure where a melting peak intrinsic to the linear low-density polyethylene (intrinsic peak) and at least one melting peak on a higher temperature side than the intrinsic peak (high-temperature peak) appear on a DSC curve drawn by heating the expanded bead from 23° C. to 200° C. at a heating rate of 10° C./min; a total heat of fusion of the expanded bead is 70 J/g or more and 100 J/g or less; and a heat of fusion at the high-temperature peak is 10 J/g or more and 50 J/g or less.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08J 9/232 - Forming foamed products by sintering expandable particles

5.

RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, PATTERN FORMING METHOD, AND COMPOUND

      
Application Number JP2024041401
Publication Number 2025/134675
Status In Force
Filing Date 2024-11-22
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Egawa,fuyuki
  • Furuichi,kota
  • Okazaki,satoshi
  • Uekusa,kouya
  • Nemoto,ryuichi

Abstract

Provided are: a radiation-sensitive composition capable of exhibiting sensitivity, CDU, LWR, water repellency, and development defect suppression at sufficient levels during pattern formation, while reducing fluorine in a surface modifier; a pattern forming method; and a compound. This radiation-sensitive composition comprises: a first polymer including a structural unit (I) having an acid dissociable group; a second polymer including a structural unit (i) derived from a compound represented by formula (F1); and a solvent. (In formula (F1): W is a polymerizable group; L is a single bond or an (n+1)-valent linking group; R1is a divalent hydrocarbon group having 1-10 carbon atoms; X1, X2, and X3are each independently a hydrogen atom or a fluorine atom, provided that at least one selected from the group consisting of X1, X2, and X3is a fluorine atom; n is an integer from 1 to 3, provided that when L is a single bond, n is 1; and when n is 2 or more, each of the multiple R1s, X1s, X2s, and X3s are the same or different from one another.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08L 33/10 - Homopolymers or copolymers of methacrylic acid esters
  • C08L 33/14 - Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

6.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Application Number JP2024044234
Publication Number 2025/134937
Status In Force
Filing Date 2024-12-13
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Abe,yudai
  • Furuichi,kota
  • Egawa,fuyuki
  • Inami,hajime
  • Nemoto,ryuichi

Abstract

The purpose of the present invention is to provide: a radiation-sensitive composition capable of forming a resist film that can exhibit sensitivity, LWR, DOF, EL, PED, CDU, and pattern circularity at sufficient levels; and a pattern formation method. The purpose of the present invention is also to provide a radiation-sensitive acid generator that can be applied to said radiation-sensitive composition. The radiation-sensitive composition comprises a polymer (A) containing a structural unit (I) having an acid-dissociable group, and a solvent (E), wherein at least the radiation-sensitive composition contains a radiation-sensitive acid generator (B) containing a partial structure represented by formula (a), or the polymer (A) contains a structural unit (VII) containing a partial structure represented by formula (a). (In formula (a): R1is a hydrogen atom, a nitro group, a hydroxy group, a cyano group, a carboxy group, a thiol group, or a monovalent fluorine-free organic group; when there are multiple R1s, the multiple R1s are the same or different from one another; R2and R3are each independently a hydrogen atom, a nitro group, a hydroxy group, a cyano group, a carboxy group, a thiol group, a halogen atom, or a monovalent organic group, or form a divalent alicyclic group which has 3 to 20 carbon atoms and which is formed from R2and R3combined with each other together with carbon atoms binding thereto; when there are multiple R2s and multiple R3s, the multiple R2s and the multiple R3s are the same or different from one another; L is *-C(=O)O-, *-C(=O)NR5-, or *-OC(=O)O-; R5is a hydrogen atom or a monovalent hydrocarbon group having 1-10 carbon atoms; * represents a bonding site on the R41side; R41is a divalent organic group having a cyclic structure and having a hetero atom; m is an integer of 1-5; n is an integer of 0-4; ** is a bonding site with the other moiety of the corresponding polymer (A) or radiation-sensitive acid generator (B); and M+ is a monovalent onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 25/18 - Polycyclic aromatic halogenated hydrocarbons
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 209/42 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 211/62 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals attached in position 4
  • C07D 295/15 - Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals with the ring nitrogen atoms and the carbon atoms with three bonds to hetero atoms attached to the same carbon chain, which is not interrupted by carbocyclic rings to an acyclic saturated chain
  • C07D 305/06 - Heterocyclic compounds containing four-membered rings having one oxygen atom as the only ring hetero atoms not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring atoms
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 317/08 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
  • C07D 321/10 - Seven-membered rings condensed with carbocyclic rings or ring systems
  • C07D 327/06 - Six-membered rings
  • C07D 327/08 - [b, e]-condensed with two six-membered carbocyclic rings
  • C07D 333/38 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
  • C07D 333/54 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
  • C07D 333/76 - Dibenzothiophenes
  • C07D 335/02 - Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
  • C07D 407/12 - Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group containing two hetero rings linked by a chain containing hetero atoms as chain links
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

7.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATION AGENT

      
Application Number JP2024044286
Publication Number 2025/134949
Status In Force
Filing Date 2024-12-13
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Abe,yudai
  • Furuichi,kota
  • Egawa,fuyuki
  • Inami,hajime
  • Nemoto,ryuichi

Abstract

The purpose of the present invention is to provide a radiation-sensitive composition whereby it is possible to form a resist film capable of exhibiting sensitivity, LWR, MEEF, CDU, development defect performance, pattern rectangularity, and pattern circularity at adequate levels, and a pattern formation method. Another purpose of the present invention is to provide a radiation-sensitive acid generation agent that can be applied to the radiation-sensitive composition. This radiation-sensitive composition contains: a polymer (A) including a structural unit (I) with an acid-dissociable group; a radiation-sensitive acid generation agent (B) represented by formula (1); and a solvent (E). Chemical Formula 1 (In formula (1), R1is a hydrogen atom, a nitro group, a hydroxyl group, a cyano group, a carboxy group, a methyl group, or an ethyl group. When there are a plurality of R1, the plurality of R1are each the same or different from each other. R2and R3are each independently a hydrogen atom, a nitro group, a hydroxyl group, a cyano group, a carboxy group, a thiol group, a halogen atom, a monovalent organic group, or a divalent alicyclic group that has 3 to 20 carbon atoms and is formed together with carbon atoms bonding together R2and R3when combined. When there are a plurality of R2and R3, the plurality of R2and R3are the same or different from each other. L is a divalent linking group. R4is a monovalent linear organic group having 3 or more carbon atoms or a monovalent branched organic group having 5 or more carbon atoms. m is an integer of 1 to 5. n is an integer of 0 to 4. M+ is a monovalent onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 327/06 - Six-membered rings
  • C07D 327/08 - [b, e]-condensed with two six-membered carbocyclic rings
  • C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
  • C07D 333/54 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
  • C07D 335/02 - Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

8.

METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN EXPANDED BEADS AND POLYPROPYLENE-BASED RESIN EXPANDED BEADS

      
Application Number 19073933
Status Pending
Filing Date 2025-03-07
First Publication Date 2025-06-26
Owner JSP CORPORATION (Japan)
Inventor
  • Nohara, Tokunobu
  • Ode, Yasutaka

Abstract

A method for producing polypropylene-based resin expanded beads includes dispersion, blowing agent impregnation, and foaming steps. Beads used in the dispersion step include a core layer having a polypropylene-based resin as a base material resin, and a fusion-bonding layer covering core layer; the beads fusion-bonding layer includes carbon black and a NOR-type hindered amine; a carbon black blending ratio is adjusted to 0.5 wt % or more and 5 wt % or less; and an amine blending ratio of the beads is adjusted to 0.03 wt % or more and 0.5 wt % or less; the polypropylene-based resin expanded beads have a surface on which a fusion-bonding layer is located; the fusion-bonding layer includes the carbon black and hindered amine; a carbon black blending ratio is 0.5 wt % or more and 5 wt % or less; and a blending ratio of the hindered amine is 0.03 wt % or more and 0.5 wt % or less.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • B29B 9/06 - Making granules by dividing preformed material in the form of filamentary material, e.g. combined with extrusion
  • B29C 48/05 - Filamentary, e.g. strands
  • B29C 48/21 - Articles comprising two or more components, e.g. co-extruded layers the components being layers the layers being joined at their surfaces
  • B29C 48/36 - Means for plasticising or homogenising the moulding material or forcing it through the nozzle or die
  • B29K 23/00 - Use of polyalkenes as moulding material
  • B29K 507/04 - Carbon
  • C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof
  • C08K 3/04 - Carbon
  • C08K 5/3492 - Triazines

9.

RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2024041416
Publication Number 2025/134677
Status In Force
Filing Date 2024-11-22
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Egawa,fuyuki
  • Furuichi,kota
  • Okazaki,satoshi
  • Uekusa,kouya
  • Nemoto,ryuichi

Abstract

The present invention provides a radiation-sensitive composition that makes it possible to exhibit satisfactory levels of sensitivity, CDU, LWR, water repellency, and development defect suppression performance in pattern formation while achieving reduction in fluorine in a surface modifier, a pattern formation method, and a compound. This radiation-sensitive composition contains: a first polymer including a structural unit (I) having an acid-dissociable group; a second polymer including a structural unit (i) derived from a compound represented by formula (F1); and a solvent. (In formula (F1), W is a polymerizable group. L111+1)-valent linking group. When L122H is –COO-*22H side. Note that L111 is an integer from 1 to 3.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 20/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

10.

RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2024041417
Publication Number 2025/134678
Status In Force
Filing Date 2024-11-22
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Egawa,fuyuki
  • Furuichi,kota
  • Okazaki,satoshi
  • Uekusa,kouya
  • Nemoto,ryuichi

Abstract

Provided are a radiation-sensitive composition, a pattern formation method, and a compound, which are capable of exhibiting sufficient levels of development defect suppression, water repellency, LWR, CDU, and sensitivity when forming a pattern, while reducing fluorine in a surface modifier. This radiation-sensitive composition contains: a first polymer including a structural unit (I) having an acid dissociable group; a second polymer including a structural unit (i) derived from a compound represented by formula (F1); and a solvent. (In formula (F1), W represents a polymerizable group. n represents 0 or 1. When n represents 0, L represents a linking group having a valance of (m+1) and having one or more carbon atoms. When n represents 1, L represents a linking group having a valance of (m+1) and having three or more carbon atoms. m represents an integer of 1-3. When m represents 2, L represents a trivalent linking group having four or more carbon atoms.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 20/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

11.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMING METHOD AND ONIUM SALT COMPOUND

      
Application Number JP2024042424
Publication Number 2025/134736
Status In Force
Filing Date 2024-11-29
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Egawa,fuyuki
  • Abe,yudai
  • Oshiro,taku
  • Otsuka,noboru
  • Nemoto,ryuichi

Abstract

To provide a radiation-sensitive composition and a pattern forming method capable of exhibiting sensitivity, pattern rectangularity, pattern circularity, exposure margin, focal depth, development defect suppression property, LWR and CDU at sufficient levels when forming a resist pattern, and having good storage stability. A radiation-sensitive composition contains an onium salt compound represented by formula (1), a polymer, and a solvent. In formula (1), Rfis a halogen atom or a cyano group. n is an integer of 0 to 4. When n is 2 or more, multiple Rfgroups are the same or different from each other. R1is a monovalent organic group having 1 to 20 carbon atoms, a hydrogen atom, a halogen atom, a cyano group or a fluorinated alkyl group that binds to a carbon atom to which R1is bonded via *-COO-, *-OCO-, *22-, *-S-, *-CO-, *-O-CO-O-, *-CONR'- or *-NR'CO-. Each R' independently is a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. *is a bond with a carbon atom to which R1is bonded. Provided that, when n is 0, R1is a halogen atom or a cyano group. R2is a hydroxy group, a nitro group, an amino group, a carboxy group, or a monovalent organic group having 1 to 20 carbon atoms. m is an integer of 0 to 4. When m is 2 or more, multiple R222-. Provided that when X is a methylene group, the aromatic ring of Ar is directly bonded to S+in the formula, and R1does not include a polymerizable group. R41, R42, R43, R44, R45and R48are each independently a hydrogen atom, a hydroxy group, a halogen atom or a monovalent organic group having 1 to 20 carbon atoms. R46and R47are each independently a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms, or R46and R47 are combined to represent a ring structure having 3 to 10 ring members together with two carbon atoms to which they are bonded.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/39 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing halogen atoms bound to the carbon skeleton
  • C07C 309/42 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
  • C07C 309/48 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton the carbon skeleton being further substituted by halogen atoms
  • C07C 309/58 - Carboxylic acid groups or esters thereof
  • C07C 317/14 - SulfonesSulfoxides having sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 307/33 - Oxygen atoms in position 2, the oxygen atom being in its keto or unsubstituted enol form
  • C07D 317/18 - Radicals substituted by singly bound oxygen or sulfur atoms
  • C07D 327/06 - Six-membered rings
  • C07D 335/02 - Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
  • C07D 337/04 - Seven-membered rings not condensed with other rings
  • C07D 339/08 - Six-membered rings
  • C07D 409/04 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings directly linked by a ring-member-to-ring- member bond
  • C07D 409/06 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

12.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Application Number JP2024044275
Publication Number 2025/134946
Status In Force
Filing Date 2024-12-13
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Abe,yudai
  • Furuichi,kota
  • Egawa,fuyuki
  • Inami,hajime
  • Nemoto,ryuichi

Abstract

The purpose of the present invention is to provide: a radiation-sensitive composition with which it is possible to form a resist film capable of exhibiting sensitivity, LWR, pattern rectangularity, CDU, pattern circularity, and development defect performance at sufficient levels; and a pattern formation method. Additionally, the purpose of the present invention is to provide a radiation-sensitive acid generator that can be applied to the radiation-sensitive composition. This radiation-sensitive composition contains a polymer (A) that contains a structural unit (I) having an acid-dissociable group, a radiation-sensitive acid generator (B) that is represented by formula (1), and a solvent (E). Formula (1) (In formula (1), R1is a hydrogen atom, a nitro group, a hydroxyl group, a cyano group, a carboxy group, a thiol group, a halogen atom, or a monovalent organic group. When there are multiple R1, the R1are each the same or different. R2is a C1-40 monovalent organic group. m1 is an integer from 1 to 5. M+ is a monovalent onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/03 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 321/10 - Seven-membered rings condensed with carbocyclic rings or ring systems
  • C07D 327/06 - Six-membered rings
  • C07D 327/08 - [b, e]-condensed with two six-membered carbocyclic rings
  • C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
  • C07D 333/76 - Dibenzothiophenes
  • C07D 335/02 - Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

13.

POLYOLEFIN-BASED RESIN FOAMED PARTICLES AND FOAMED PARTICLE MOLDED ARTICLE

      
Application Number JP2024044873
Publication Number 2025/135088
Status In Force
Filing Date 2024-12-18
Publication Date 2025-06-26
Owner
  • JSP CORPORATION (Japan)
  • JSP INTERNATIONAL SARL (France)
Inventor
  • Laurianne Vedie
  • Christophe Trouillet
  • Kopf Valentin
  • Hira Akinobu

Abstract

Provided are polyolefin-based resin foamed particles with which it is possible to easily mold a polyolefin-based resin foamed particle molded article exhibiting high flame retardancy as well as exceptional fusion properties and surface properties. These polyolefin-based resin foamed particles comprise a foam layer. The foam layer contains a base material resin, a phosphonic-acid-ester-based compound, and a NOR-type hindered-amine-based compound. The base material resin is configured from a polyolefin-based resin. The blending amount of the phosphonic-acid-ester-based compound in the foam layer is 5-25 parts by mass per 100 parts by mass of the base material resin. The blending amount of the NOR-type hindered-amine-based compound in the foam layer is 0.3-5 parts by mass per 100 parts by mass of the base material resin. The closed cell ratio of the foamed particles is 60% or greater.

IPC Classes  ?

14.

METHOD FOR PRODUCING FOAMABLE POLYAMIDE-BASED RESIN PARTICLES, METHOD FOR PRODUCING POLYAMIDE-BASED RESIN FOAMED PARTICLES, AND POLYAMIDE-BASED RESIN FOAMED PARTICLES

      
Application Number 18844770
Status Pending
Filing Date 2023-03-03
First Publication Date 2025-06-19
Owner JSP CORPORATION (Japan)
Inventor Yamanaka, Ryo

Abstract

A method for producing foamable polyamide-based resin particles according to the present invention includes impregnating polyamide-based resin particles with an inorganic physical foaming agent in a gas phase, wherein the polyamide-based resin particles have a water content of at least 2.5 mass % and contain 0.5-10 mass % of carbon black. Foamed polyamide-based resin particles are obtained by heating and foaming the foamable polyamide resin particles.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof

15.

PRODUCTION METHOD FOR CHROMATOGRAPHIC CARRIER

      
Application Number JP2024032744
Publication Number 2025/126602
Status In Force
Filing Date 2024-09-12
Publication Date 2025-06-19
Owner JSR CORPORATION (Japan)
Inventor
  • Miyajima, Ken
  • Akiyama, Minato
  • Matsumoto, Kentarou
  • Kobayashi, Kunihiko

Abstract

The present invention provides a method for easily producing a chromatographic carrier that has a high dynamic binding capacity to antibodies or fragments thereof, inhibits the leakage of protein ligands during isolation, and inhibits the aggregation of carriers. Provided is a production method for a chromatographic carrier comprising the ligand binding step, ligand-bound carrier bed forming step, ligand-bound carrier flushing and cleaning step, and ligand-bound carrier stirring and cleaning step described hereafter. Ligand binding step: a step in which a protein ligand is bound to a solid phase carrier. Ligand-bound carrier bed forming step: a step in which a container is filled with the ligand-bound carrier obtained in the ligand binding step to form a ligand-bound carrier bed. Ligand-bound carrier flushing and cleaning step: a step in which the ligand-bound carrier bed formed in the ligand-bound carrier bed forming step is cleaned one or more times by flushing the bed with a cleaning liquid. Ligand-bound carrier stirring and cleaning step: a step in which the ligand-bound carrier after the ligand-bound carrier flushing and cleaning step is cleaned one or more times by stirring in a cleaning liquid.

IPC Classes  ?

  • B01J 20/281 - Sorbents specially adapted for preparative, analytical or investigative chromatography
  • C07K 1/22 - Affinity chromatography or related techniques based upon selective absorption processes
  • G01N 30/50 - Conditioning of the sorbent material or stationary liquid

16.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024040000
Publication Number 2025/126742
Status In Force
Filing Date 2024-11-11
Publication Date 2025-06-19
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori,katsuaki
  • Omiya,takuya
  • Ito,ryo

Abstract

Provided are a radiation-sensitive composition capable of exhibiting sufficient levels of sensitivity, CDU performance, and development defect suppression property during pattern formation while achieving a reduction of fluorine in a surface modifier, and a pattern formation method. The radiation-sensitive composition comprises: a first polymer having a structural unit containing an acid-dissociable group; a second polymer different from the first polymer; at least one selected from the group consisting of a radiation-sensitive acid generator containing an iodine group, and an acid diffusion control agent containing an iodine group; and a solvent. The content ratio of the second polymer to the total mass of the first polymer and the second polymer is 0.1-20 mass% inclusive. The second polymer includes a partial structure represented by formula (i), and has a structural unit (B1) not containing a fluorine atom. (In formula (i), R1, R2, and R3 are each independently an alkyl group having 1 to 10 carbon atoms, and * is a bond to a structure other than the partial structure in the structural unit (B1).)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 12/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 20/10 - Esters
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

17.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Application Number JP2024040123
Publication Number 2025/126748
Status In Force
Filing Date 2024-11-12
Publication Date 2025-06-19
Owner JSR CORPORATION (Japan)
Inventor
  • Okude,ryo
  • Nishikori,katsuaki
  • Nemoto,ryuichi

Abstract

The purpose of the present invention is to provide: a radiation-sensitive composition capable of forming a resist film that can exhibit sensitivity and CDU at satisfactory levels when next-generation technology is applied and can suppress development defects; and a pattern formation method. The purpose of the present invention is also to provide a radiation-sensitive acid generator that can be applied to said radiation-sensitive composition. The present invention relates to a radiation-sensitive composition containing: a polymer (A) containing a structural unit (I) having an acid-dissociable group; a radiation-sensitive acid generator (B) represented by formula (1); and a solvent (C). (In formula (1): A is an (n1+n2+n3+1)-valent aromatic ring; R1is a nitro group, a cyano group, a hydroxy group, an amino group, or a monovalent organic group; when there are multiple R1s, the multiple R1s are the same or different from one another; n1 is an integer of 1-5; n2 is an integer of 1-5; n3 is an integer of 0-5; m2 is an integer of 1-3; L is a single bond or an (m2+1)-valent linking group; Rf1and Rf2are each independently a fluorine atom or a monovalent fluorinated hydrocarbon group having 1-20 carbon atoms; Rf3and Rf4are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1-20 carbon atoms, or a monovalent fluorinated hydrocarbon group having 1-20 carbon atoms; when there are multiple Rf3s and multiple Rf4s, the multiple Rf3s and the multiple Rf4s may each be the same or different from one another; m1 is an integer of 0-10; and M+ is a monovalent onium cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/11 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton with the oxygen atom of at least one of the etherified hydroxy groups further bound to a carbon atom of a six-membered aromatic ring
  • C07C 381/12 - Sulfonium compounds
  • C07D 317/70 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with ring systems containing two or more relevant rings
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

18.

PRODUCTION METHOD FOR CHROMATOGRAPHIC CARRIER

      
Application Number JP2024032743
Publication Number 2025/126601
Status In Force
Filing Date 2024-09-12
Publication Date 2025-06-19
Owner JSR CORPORATION (Japan)
Inventor
  • Miyajima, Ken
  • Akiyama, Minato
  • Matsumoto, Kentarou
  • Kobayashi, Kunihiko

Abstract

The present invention provides a method for easily producing a chromatographic carrier that has a high dynamic binding capacity to antibodies or fragments thereof, inhibits the leakage of protein ligands during isolation, and inhibits the aggregation of carriers. Provided is a production method for a chromatographic carrier comprising the solid phase carrier cleaning step, ligand binding step, and ligand-bound carrier cleaning step described hereafter. Solid phase carrier cleaning step: a step in which a solid phase carrier is cleaned using at least one cleaning liquid selected from cleaning liquids containing hydrogen peroxide, cleaning liquids containing peracetic acid, and cleaning liquids (other than cleaning liquids containing hydrogen peroxide and cleaning liquids containing peracetic acid) having a pH of 0-3 or a pH of higher than 12.5 to 14, and the surface of the solid phase carrier is made hydrophilic. Ligand binding step: a step in which a protein ligand is bound to the solid phase carrier cleaned in the solid phase carrier cleaning step. Ligand-bound carrier cleaning step: a step in which the carrier obtained in the ligand binding step is cleaned.

IPC Classes  ?

  • B01J 20/281 - Sorbents specially adapted for preparative, analytical or investigative chromatography
  • C07K 1/22 - Affinity chromatography or related techniques based upon selective absorption processes
  • G01N 30/50 - Conditioning of the sorbent material or stationary liquid

19.

ANTIFERROMAGNETIC MATERIAL WITH LARGE ANOMALOUS HALL EFFECT

      
Application Number JP2024044191
Publication Number 2025/127136
Status In Force
Filing Date 2024-12-13
Publication Date 2025-06-19
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
  • TOHOKU UNIVERSITY (Japan)
Inventor
  • Toga,yuuta
  • Inukai,kouji
  • Kubo,koutarou
  • Nakatsuji,satoru
  • Minami,susumu
  • Koretsune,takashi

Abstract

31-xx331-yyy (0

IPC Classes  ?

  • H10N 52/00 - Hall-effect devices
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/10 - Magnetoresistive devices

20.

THERAPEUTIC AGENT FOR OVARIAN CLEAR CELL CARCINOMA

      
Application Number 19040964
Status Pending
Filing Date 2025-01-30
First Publication Date 2025-06-12
Owner
  • JSR CORPORATION (Japan)
  • KEIO UNIVERSITY (Japan)
Inventor
  • Ookubo, Aki
  • Chiyoda, Tatsuyuki
  • Yoshimura, Takuma

Abstract

What is provided is a therapeutic agent that is effective for the treatment of ovarian clear cell carcinoma. A therapeutic agent for ovarian clear cell carcinoma includes, as an active ingredient, a proteasome inhibitor. Furthermore, in the therapeutic agent for ovarian clear cell carcinoma, the proteasome inhibitor is a substance that reversibly or irreversibly binds to a 20s proteasome-β5 subunit and inhibits a chymotrypsin-like activity. Moreover, in the therapeutic agent for ovarian clear cell carcinoma, the proteasome is a 26s proteasome. In addition, in the therapeutic agent for ovarian clear cell carcinoma, a content proportion of the proteasome inhibitor is 80% by mass or more, 90% by mass or more, or 100% by mass.

IPC Classes  ?

21.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024039222
Publication Number 2025/121051
Status In Force
Filing Date 2024-11-05
Publication Date 2025-06-12
Owner JSR CORPORATION (Japan)
Inventor
  • Hachiya,asuka
  • Nishikori,katsuaki
  • Omiya,takuya

Abstract

Provided are a radiation-sensitive composition which has excellent sensitivity and CDU and good storage stability, and a pattern formation method. This radiation-sensitive composition comprises a polymer which contains a structural unit (I) that has an acid-dissociable group, an acid diffusion control agent which includes a third organic acid anion and a third onium cation and which, when exposed to light, generates an acid that does not dissociate the acid-dissociable group, and a solvent, wherein at least: the polymer includes a structural unit (II) which has a first organic acid anion and an iodonium cation and which includes an acid generation structure that, when exposed to light, generates an acid that dissociates the acid-dissociable group; the radiation-sensitive composition contains a radiation-sensitive acid generation agent which contains a second organic acid anion and an iodonium cation and which, when exposed to light, generates an acid that dissociates the acid-dissociable group; or the third onium cation is an iodonium cation, the third organic acid anion of the acid diffusion control agent includes an aromatic ring, -COO-is bound to one of the ring-forming atoms of the aromatic ring, -OH is bound to each of two ring-forming atoms which are adjacent to the one ring-forming atom, and the solvent includes a compound represented by formula (H). (In formula (H), R1to R3 are each independently a substituted or unsubstituted C1-20 monovalent aliphatic hydrocarbon group.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

22.

RESIN COMPOSITION, CURED OBJECT, AND ELECTRONIC COMPONENT

      
Application Number JP2024040247
Publication Number 2025/115606
Status In Force
Filing Date 2024-11-13
Publication Date 2025-06-05
Owner JSR CORPORATION (Japan)
Inventor
  • Iizuka Shunsuke
  • Satonaka Eri

Abstract

One embodiment of the present invention pertains to a resin composition, a cured object, or an electronic component. The resin composition contains: a polymer (A) having a structural unit represented by formula (a1-1); and a hydrogenated styrene-based thermoplastic elastomer (B). In formula (a1-1), Ra1represents a divalent group represented by formula (a2), and Ra2represents a substituted or unsubstituted divalent aromatic heterocyclic group. In formula (a2), Ara1and Ara2each independently represent a substituted or unsubstituted aromatic hydrocarbon group, L represents a single bond, -O-, -S-, -N(R822-, -P(O)-, or a divalent organic group, y represents an integer of 0-5, and Ra6and Ra7 each independently represent a single bond, a methylene group, or an alkylene group having 2-4 carbon atoms.

IPC Classes  ?

  • C08L 71/10 - Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
  • C08G 65/40 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols and other compounds
  • C08L 15/00 - Compositions of rubber derivatives

23.

POLYOLEFIN-BASED RESIN FOAM PARTICLE, FOAM PARTICLE MOLDED BODY OBTAINED BY IN-MOLD MOLDING OF SAID FOAM PARTICLE, METHOD FOR PRODUCING SAID FOAM PARTICLE, AND METHOD FOR ASSESSING FLAME RETARDANCY OF SAID FOAM PARTICLE

      
Application Number JP2024041680
Publication Number 2025/115815
Status In Force
Filing Date 2024-11-25
Publication Date 2025-06-05
Owner
  • JSP INTERNATIONAL SARL (France)
  • JSP CORPORATION (Japan)
Inventor
  • Vedie Laurianne
  • Kopf Valentin
  • Hira Akinobu
  • Dilger Melvin
  • Jimenez Maude
  • Bellayer Severine
  • Duquesne Sophie

Abstract

215235215tot215235 to t to t is a numerical value that indicates the mass percentage of phosphorus in the foam particle, and falls within the range 0.001-0.06.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

24.

METHOD FOR PRODUCING MOLDED ARTICLE OF THERMOPLASTIC RESIN EXPANDED BEADS

      
Application Number 18840104
Status Pending
Filing Date 2023-03-10
First Publication Date 2025-05-22
Owner JSP CORPORATION (Japan)
Inventor
  • Miura, Tomohiro
  • Sasaki, Kenta

Abstract

A method for producing a molded article of thermoplastic resin expanded beads that includes cracking filling and in-mold molding. The expanded beads have a columnar shape and a defective portion that is a through hole and/or a groove. A ratio Ca/A of an average cross-sectional area Ca per defective portion to an average cross-sectional area A of a cut surface of the expanded bead obtained by cutting the expanded bead at a center in an axial direction along a plane perpendicular to the axial direction is 0.01 or more and 0.20 or less, and a ratio Ct/A of a total cross-sectional area Ct of the defective portion to the average cross-sectional area A of the expanded bead is 0.02 or more and 0.20 or less. When the mold is completely closed, a filling rate F of the expanded beads is 125% or more and 220% or less.

IPC Classes  ?

  • B29C 44/34 - Component parts, details or accessoriesAuxiliary operations
  • B29C 44/02 - Shaping by internal pressure generated in the material, e.g. swelling or foaming for articles of definite length, i.e. discrete articles
  • B29C 44/44 - Feeding the material to be shaped into a closed space, i.e. to make articles of definite length in the form of expandable particles or beads
  • B29C 44/60 - Measuring, controlling or regulating
  • B29K 23/00 - Use of polyalkenes as moulding material

25.

METHOD FOR PRODUCING MOLDED ARTICLE OF THERMOPLASTIC RESIN EXPANDED BEADS

      
Application Number 18841513
Status Pending
Filing Date 2023-03-10
First Publication Date 2025-05-22
Owner JSP CORPORATION (Japan)
Inventor
  • Miura, Tomohiro
  • Sasaki, Kenta

Abstract

A method for producing a molded article of thermoplastic resin expanded beads includes a cracking filling step and an in-mold molding step. Expanded beads to be used in the cracking filling step each have a columnar shape and each have one or more defective portions of one or two kinds, the defective portions being selected from the group consisting of through holes and grooves. A molding cavity of a mold has a first portion having a length in an opening/closing direction of the mold greater than an average length LA and a second portion shorter than the average length LA. In the cracking filling step, a difference P2max−P1min between a minimum value P1min of the compression rate of the first portion and a maximum value P2max of the compression rate of the second portion is 5% or more and 100% or less.

IPC Classes  ?

  • B29C 39/00 - Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressureApparatus therefor
  • B29C 39/10 - Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressureApparatus therefor for making articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. casting around inserts or for coating articles
  • B29C 39/24 - Feeding the material into the mould
  • B29C 39/38 - Heating or cooling
  • B29K 23/00 - Use of polyalkenes as moulding material
  • B29K 105/04 - Condition, form or state of moulded material cellular or porous

26.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND RADIATION-SENSITIVE ACID GENERATOR

      
Application Number 19034826
Status Pending
Filing Date 2025-01-23
First Publication Date 2025-05-22
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Mita, Michihiro
  • Miyao, Kensuke
  • Okazaki, Satoshi

Abstract

A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound represented by formula (1). In the formula (1), L1 represents a group having a (thio)acetal ring or the like. W1 represents a single bond or a (b+1)-valent organic group having 1 to 40 carbon atoms. R1, R2, and R3 each independently represent a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a fluorine atom, or a fluoroalkyl group. Rf represents a fluorine atom or a fluoroalkyl group. a represents an integer of 0 to 8. b represents an integer of 1 to 4. d represents 1 or 2. When a represents 2 or more, a plurality of R1 are the same or different, and a plurality of R2 are the same or different. M+ represents a monovalent cation. A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound represented by formula (1). In the formula (1), L1 represents a group having a (thio)acetal ring or the like. W1 represents a single bond or a (b+1)-valent organic group having 1 to 40 carbon atoms. R1, R2, and R3 each independently represent a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a fluorine atom, or a fluoroalkyl group. Rf represents a fluorine atom or a fluoroalkyl group. a represents an integer of 0 to 8. b represents an integer of 1 to 4. d represents 1 or 2. When a represents 2 or more, a plurality of R1 are the same or different, and a plurality of R2 are the same or different. M+ represents a monovalent cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/32 - Liquid compositions therefor, e.g. developers

27.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD

      
Application Number 18951824
Status Pending
Filing Date 2024-11-19
First Publication Date 2025-05-22
Owner JSR CORPORATION (Japan)
Inventor
  • Shiratani, Motohiro
  • Yonezawa, Fumiko
  • Nakayama, Takehiro
  • Araki, Masahiro
  • Sasaki, Hirofumi

Abstract

A radiation-sensitive composition includes: a first polymer comprising a structural unit (I) having an acid-dissociable group; a second polymer comprising a structural unit (i) represented by formula (f1); and a solvent. The acid-dissociable group has an iodo group. RK1 is a hydrogen atom, a fluorine atom, or the like; LY1 is a divalent hydrocarbon group having 1 to 10 carbon atoms; LY2 is —COO—* or —OCO—*, *is a bond on an Rf1 side; Rf1 is a monovalent hydrocarbon group having 1 to 10 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; Rf2 and Rf3 are each independently a fluorine atom or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; s is an integer of 0 to 3, and when Rf1 is the monovalent hydrocarbon group having 1 to 10 carbon atoms, s is an integer of 1 to 3. A radiation-sensitive composition includes: a first polymer comprising a structural unit (I) having an acid-dissociable group; a second polymer comprising a structural unit (i) represented by formula (f1); and a solvent. The acid-dissociable group has an iodo group. RK1 is a hydrogen atom, a fluorine atom, or the like; LY1 is a divalent hydrocarbon group having 1 to 10 carbon atoms; LY2 is —COO—* or —OCO—*, *is a bond on an Rf1 side; Rf1 is a monovalent hydrocarbon group having 1 to 10 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; Rf2 and Rf3 are each independently a fluorine atom or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; s is an integer of 0 to 3, and when Rf1 is the monovalent hydrocarbon group having 1 to 10 carbon atoms, s is an integer of 1 to 3.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08L 25/18 - Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
  • C08L 33/06 - Homopolymers or copolymers of esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
  • C08L 33/16 - Homopolymers or copolymers of esters containing halogen atoms
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

28.

INORGANIC FOAM

      
Application Number 18724429
Status Pending
Filing Date 2022-12-23
First Publication Date 2025-05-15
Owner JSP CORPORATION (Japan)
Inventor
  • Naito, Naoki
  • Noro, Jinichiro

Abstract

An inorganic foam comprising an inorganic polymer having leucite crystal structure as a base material, the area of the peak derived from leucite crystal in the X-ray diffraction spectrum of the inorganic foam satisfies the following formula (1): D(geo)/D(pur)≥0.5 (1). In formula (1), D(geo) represents the area of the peak located at 2θ=27.3° derived from leucite crystal in the X-ray diffraction spectrum of the inorganic foam, and D(pur) represents the area of the peak located at 2θ=27.3° derived from leucite crystal in the X-ray diffraction spectrum of leucite pure material.

IPC Classes  ?

  • C04B 38/10 - Porous mortars, concrete, artificial stone or ceramic warePreparation thereof by using foaming agents
  • C04B 35/18 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on silicates other than clay rich in aluminium oxide

29.

COMPLEX FOR TUMOR CHEMODYNAMIC THERAPY

      
Application Number JP2024039549
Publication Number 2025/100466
Status In Force
Filing Date 2024-11-07
Publication Date 2025-05-15
Owner
  • NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japan)
  • JSR CORPORATION (Japan)
Inventor
  • Sato, Kazuhide
  • Shimada, Mibuko

Abstract

This complex for use in tumor chemodynamic therapy comprises: nanoparticles that enclose iron oxide and include a hydrophilic polymer in a surface layer thereof; and target recognition molecules that bind to the nanoparticles and can bind to target molecules of the tumor cells.

IPC Classes  ?

  • A61K 33/26 - IronCompounds thereof
  • A61K 33/40 - Peroxides
  • A61K 39/395 - AntibodiesImmunoglobulinsImmune serum, e.g. antilymphocytic serum
  • A61K 47/36 - PolysaccharidesDerivatives thereof, e.g. gums, starch, alginate, dextrin, hyaluronic acid, chitosan, inulin, agar or pectin
  • A61K 47/68 - Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additivesTargeting or modifying agents chemically bound to the active ingredient the non-active ingredient being chemically bound to the active ingredient, e.g. polymer-drug conjugates the non-active ingredient being a modifying agent the modifying agent being an antibody, an immunoglobulin or a fragment thereof, e.g. an Fc-fragment
  • A61K 49/00 - Preparations for testing in vivo
  • A61K 49/16 - AntibodiesImmunoglobulinsFragments thereof
  • A61K 49/18 - Nuclear magnetic resonance [NMR] contrast preparationsMagnetic resonance imaging [MRI] contrast preparations characterised by a special physical form, e.g. emulsions, microcapsules, liposomes
  • A61P 35/00 - Antineoplastic agents

30.

METHOD FOR PRODUCING ABRASIVE GRAINS, COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, AND POLISHING METHOD

      
Application Number 18840479
Status Pending
Filing Date 2023-03-10
First Publication Date 2025-05-15
Owner JSR CORPORATION (Japan)
Inventor
  • Yanagi, Takanori
  • Wang, Pengyu
  • Nakanishi, Koji

Abstract

The present invention provides: a composition for chemical mechanical polishing, a polishing method which uses this composition for chemical mechanical polishing, and a method for producing abrasive grains which are used therein. The present invention also provides: a composition for chemical mechanical polishing, the composition being capable of polishing a silicon oxide film at a high polishing rate, while having excellent storage stability; a polishing method which uses this composition for chemical mechanical polishing; and a method for producing abrasive grains which are used therein. A method for producing abrasive grains according to the present invention comprises a step in which particles each having a surface to which a hydroxyl group (—OH) is immobilized via a covalent bond, an alkoxysilane having an epoxy group, and a basic compound are mixed and heated.

IPC Classes  ?

31.

Radiation-Sensitive Composition and Method for Forming Resist Pattern

      
Application Number 18839677
Status Pending
Filing Date 2022-12-19
First Publication Date 2025-05-15
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A radiation-sensitive composition contains: (A) a polymer, and (B) a radiation-sensitive acid-generator formed of an onium cation and an organic anion having 4 or more iodine atoms, the onium cation having at least one group Rf1 selected from the group consisting of a fluoroalkyl group and a fluoro group (excluding a fluoro group in the fluoroalkyl group).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08K 5/372 - Sulfides
  • C08K 5/42 - Sulfonic acidsDerivatives thereof
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

32.

COMPOSITION, FOOD/BEVERAGE ITEM, AND METHOD FOR ASSISTING EXAMINATION AND DIAGNOSIS OF DISEASE CAUSED BY PATHOGENIC BACTERIUM OR PATHOGENIC FUNGUS

      
Application Number JP2024039600
Publication Number 2025/100480
Status In Force
Filing Date 2024-11-07
Publication Date 2025-05-15
Owner
  • KEIO UNIVERSITY (Japan)
  • JSR CORPORATION (Japan)
Inventor
  • Honda Kenya
  • Nishiyama Keita
  • Wang Zhujun
  • Ye Ning
  • Atarashi Koji
  • Nagashima Keika
  • Aoto Yoshimasa

Abstract

The present invention provides: a composition and a food/beverage item which can promote the elongation of pili of an intestinal bacterium and exhibits an anti-bacterial activity; and a method for assisting the examination and diagnosis of a disease caused by a pathogenic bacterium or a pathogenic fungus. The present invention provides a composition containing a bacterium capable of producing 3-phenylpropionic acid (PPA) or 3-(4-hydroxyphenyl)propionic acid (4OHPPA). The present invention also provides a food/beverage item containing PPA or 4OHPPA. The present invention further provides a method for assisting the examination and diagnosis of a disease caused by a pathogenic bacterium or a pathogenic fungus. The method comprises: quantifying the amount of PPA or the amount of 4OHPPA in feces from a subject by using 2-nitrophenylhydrazine; and comparing a value obtained by the quantification of the amount of PPA or the amount of 4OHPPA with a reference value. When the value obtained by the quantification of the amount of PPA or the amount of 4OHPPA is smaller than the reference value, it is determined that the subject is possibly affected by the disease.

IPC Classes  ?

  • A61K 35/74 - Bacteria
  • A23L 33/135 - Bacteria or derivatives thereof, e.g. probiotics
  • A61K 35/741 - Probiotics
  • A61K 35/742 - Spore-forming bacteria, e.g. Bacillus coagulans, Bacillus subtilis, clostridium or Lactobacillus sporogenes
  • A61K 35/744 - Lactic acid bacteria, e.g. enterococci, pediococci, lactococci, streptococci or leuconostocs
  • A61K 35/745 - Bifidobacteria
  • A61K 35/747 - Lactobacilli, e.g. L. acidophilus or L. brevis
  • A61P 1/00 - Drugs for disorders of the alimentary tract or the digestive system
  • A61P 1/02 - Stomatological preparations, e.g. drugs for caries, aphtae, periodontitis
  • A61P 7/00 - Drugs for disorders of the blood or the extracellular fluid
  • A61P 11/00 - Drugs for disorders of the respiratory system
  • A61P 13/02 - Drugs for disorders of the urinary system of urine or of the urinary tract, e.g. urine acidifiers
  • A61P 15/02 - Drugs for genital or sexual disordersContraceptives for disorders of the vagina
  • A61P 31/04 - Antibacterial agents
  • A61P 31/10 - Antimycotics
  • A61P 43/00 - Drugs for specific purposes, not provided for in groups
  • C12N 1/20 - BacteriaCulture media therefor
  • C12N 9/02 - Oxidoreductases (1.), e.g. luciferase
  • C12N 9/88 - Lyases (4.)
  • C12Q 1/68 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions involving nucleic acids
  • G01N 33/50 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing

33.

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE

      
Application Number 18838028
Status Pending
Filing Date 2023-02-13
First Publication Date 2025-05-08
Owner JSR CORPORATION (Japan)
Inventor
  • Nishiguchi, Naoki
  • Endo, Ayako
  • Matsumoto, Tomoyuki

Abstract

A photosensitive resin composition includes a polymer (A), a photoacid generator (B), and an organic solvent (C). The polymer (A) includes: a structural unit having a phenolic hydroxy group; and a (meth)acrylate-derived structural unit having an acid-dissociable group. The organic solvent (C) includes 3-ethoxyethyl propionate. A solid content concentration of the photosensitive resin composition is 30 mass % or more.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08K 5/45 - Heterocyclic compounds having sulfur in the ring
  • C09D 133/06 - Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
  • C09D 161/18 - Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or their halogen derivatives only
  • C25D 5/02 - Electroplating of selected surface areas
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition

34.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number 18838262
Status Pending
Filing Date 2022-12-19
First Publication Date 2025-05-08
Owner JSR CORPORATION (Japan)
Inventor Maruyama, Ken

Abstract

A radiation-sensitive composition contains: (A) a polymer including a structural unit (U) represented by the following formula (1); and (B) a radiation-sensitive acid-generator formed of an onium cation having at least one group Rf1 selected from the group consisting of a fluoroalkyl group and a fluoro group (excepting a fluoro group in the fluoroalkyl group) and an organic anion having an iodine atom. In formula (1), R1 represents a hydrogen atom, a methyl group, or the like. X1 represents a single bond, an ether bond, an ester bond, or the like. Ar1 represents a cyclic group bound to X1 via an aromatic ring. A hydroxy group or group —ORY is bound to an atom adjacent to the atom bound to X1, among the atoms forming the aromatic group in Ar1. RY represents an acid-releasable group. A radiation-sensitive composition contains: (A) a polymer including a structural unit (U) represented by the following formula (1); and (B) a radiation-sensitive acid-generator formed of an onium cation having at least one group Rf1 selected from the group consisting of a fluoroalkyl group and a fluoro group (excepting a fluoro group in the fluoroalkyl group) and an organic anion having an iodine atom. In formula (1), R1 represents a hydrogen atom, a methyl group, or the like. X1 represents a single bond, an ether bond, an ester bond, or the like. Ar1 represents a cyclic group bound to X1 via an aromatic ring. A hydroxy group or group —ORY is bound to an atom adjacent to the atom bound to X1, among the atoms forming the aromatic group in Ar1. RY represents an acid-releasable group.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

35.

INFORMATION PROCESSING SYSTEM, PROGRAM, AND INFORMATION PROCESSING METHOD

      
Application Number JP2024038737
Publication Number 2025/095008
Status In Force
Filing Date 2024-10-30
Publication Date 2025-05-08
Owner
  • JSR CORPORATION (Japan)
  • NATIONAL CEREBRAL AND CARDIOVASCULAR CENTER (Japan)
Inventor
  • Takahashi, Shouadnas
  • Sawada, Katsutoshi
  • Fujioka, Masayasu
  • Kobayashi, Nobutoshi
  • Nakaoka, Yoshikazu
  • Asano, Ryotaro
  • Moriuchi, Kenji

Abstract

An information processing system (1) according to an embodiment comprises a determination unit (102) that inputs pulse information relating to the heartbeat of a subject and attribute information pertaining to the subject to a trained model and thereby generates a determination result indicating the presence/absence and the degree of heart disease in the subject. The trained model is trained using, for a plurality of providers who provide training data, pulse information relating to the heartbeat of the provider, attribute information pertaining to the provider, and diagnosis information indicating the state of cardiac function of the provider.

IPC Classes  ?

  • A61B 5/346 - Analysis of electrocardiograms
  • A61B 5/352 - Detecting R peaks, e.g. for synchronising diagnostic apparatusEstimating R-R interval
  • G16H 50/20 - ICT specially adapted for medical diagnosis, medical simulation or medical data miningICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for computer-aided diagnosis, e.g. based on medical expert systems
  • G06N 20/00 - Machine learning

36.

EUVX

      
Application Number 1853555
Status Registered
Filing Date 2025-03-21
Registration Date 2025-03-21
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

37.

CRYSTALLINE THERMOPLASTIC RESIN EXPANDED BEAD, MOLDED ARTICLE OF CRYSTALLINE THERMOPLASTIC RESIN EXPANDED BEADS, AND METHOD FOR PRODUCING SAME

      
Application Number 18835855
Status Pending
Filing Date 2023-02-02
First Publication Date 2025-05-01
Owner JSP CORPORATION (Japan)
Inventor
  • Sakamura, Takumi
  • Ohta, Hajime

Abstract

A molded article of expanded beads is obtained by mutual fusion-bonding of columnar crystalline thermoplastic resin expanded beads each having no through-hole. The molded article ratio of the molded article of crystalline thermoplastic resin expanded beads is 15 times or more and 90 times or less. The molded article of crystalline thermoplastic resin expanded beads has a closed cell content of 90% or more. The molded article of crystalline thermoplastic resin expanded beads has an open cell content of 2% or more and 12% or less.

IPC Classes  ?

  • C08J 9/232 - Forming foamed products by sintering expandable particles

38.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

      
Application Number JP2024034915
Publication Number 2025/084117
Status In Force
Filing Date 2024-09-30
Publication Date 2025-04-24
Owner JSR CORPORATION (Japan)
Inventor
  • Watanabe,daichi
  • Itagaki,masafumi
  • Nonoyama,yoshiki
  • Chosa,tomoya

Abstract

The purpose of the present invention is to provide: a radiation sensitive composition which exhibits sensitivity and CDU at satisfactory levels when next generation techniques are used and which can form a resist film in which developing defects are suppressed; and a pattern formation method. Another purpose of the present invention is to provide a polymer and a compound able to be used in the radiation-sensitive composition. The present invention relates to a radiation-sensitive composition which contains: a polymer (A) including a structural unit (I) represented by general formula (1); and a solvent (B). The polymer (A) includes a radiation-sensitive acid-generating structural unit (IV): and/or a radiation-sensitive acid generator (C) is contained in a component other than the polymer (A). An iodo group is contained in at least one component selected from the group consisting of the polymer (A) and the radiation-sensitive acid generator (C). In formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. L1is a single bond or a divalent linking group. Ar denotes a furan ring, a thiophene ring, or a 9- to 20-membered aromatic heterocyclic ring having a furan ring or a thiophene ring. R2is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms. R3is a halogen atom, a hydroxyl group, a cyano group, a nitro group, an amino group, a thiol group or a monovalent organic group having 1-20 carbon atoms. n is an integer between 0 and 4. If the value of n is 2 or more, multiple R3 moieties may be the same as, or different from, each other.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07D 307/68 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
  • C07D 307/85 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
  • C07D 333/38 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 333/70 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
  • C07D 407/12 - Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group containing two hetero rings linked by a chain containing hetero atoms as chain links
  • C07D 409/12 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a chain containing hetero atoms as chain links
  • C08F 8/12 - Hydrolysis
  • C08F 24/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
  • C08F 28/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

39.

COREDUAL

      
Serial Number 99144897
Status Pending
Filing Date 2025-04-18
Owner JSP CORPORATION (Japan)
NICE Classes  ?
  • 12 - Land, air and water vehicles; parts of land vehicles
  • 17 - Rubber and plastic; packing and insulating materials

Goods & Services

structural parts for automobiles; vehicle running boards; body panels for vehicles; roof panels for land vehicles semi-processed thermoplastics; plastic wallboards; semi-processed plastics; plastic padding for shipping containers; Thermoplastic foam in the form of cores for use in the manufacture of insulation; Thermoplastic foam in the form of boards for use in the manufacture of insulation; Fiber-reinforced plastic boards being raw material for use in manufacture

40.

METHOD FOR PRODUCING GENE-MODIFIED T CELL POPULATION

      
Application Number 18683815
Status Pending
Filing Date 2022-08-10
First Publication Date 2025-04-17
Owner
  • KEIO UNIVERSITY (Japan)
  • JSR CORPORATION (Japan)
Inventor
  • Kawakami, Yutaka
  • Wakui, Seiki
  • Ueno, Masaru
  • Aoyama, Ryo
  • Sekine, Hitoshi

Abstract

Provided is a method of producing a gene-modified T cell population, including mixing a cell population containing T cells with beads each having bound thereto a virus containing a target gene to introduce the target gene into each of the cells of the cell population, wherein the cell population containing the T cells is cultured in a solution containing a CD3 signal activator that is present without being immobilized on a solid phase.

IPC Classes  ?

  • C12N 5/0783 - T cellsNK cellsProgenitors of T or NK cells
  • C12N 5/00 - Undifferentiated human, animal or plant cells, e.g. cell linesTissuesCultivation or maintenance thereofCulture media therefor
  • C12N 15/86 - Viral vectors

41.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2024035444
Publication Number 2025/079496
Status In Force
Filing Date 2024-10-03
Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Serizawa,ryuichi
  • Kimata,hironori
  • Ozaki,yuki

Abstract

Provided is a method for manufacturing a semiconductor substrate that has excellent embedding properties, in which a composition for forming a metal-containing film is embedded in a substrate pattern. The method for manufacturing the semiconductor substrate comprises: a step for coating a substrate with a film-forming composition; and a step for performing, on the coating film formed in the film-forming composition coating step, at least one process selected from the group consisting of exposure to radiation and exposure to plasma. The film-forming composition contains a metal compound composed of at least a metal atom and an organic acid, and a solvent.

IPC Classes  ?

42.

JSR NSC

      
Application Number 1849865
Status Registered
Filing Date 2025-02-27
Registration Date 2025-02-27
Owner JSR CORPORATION (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemical source material for the deposition of thin films upon semiconductor wafers for the manufacture of semiconductors; industrial chemicals for use in the manufacture of semiconductors; industrial chemicals; adhesives for industrial purposes; chemical preparations for use in photography; photoresists; unprocessed artificial resins as raw materials in the form of powders, liquids or pastes; unprocessed plastics in primary form.

43.

POLYMER, COMPOSITION, CURED PRODUCT, LAMINATED BODY, AND ELECTRONIC COMPONENT

      
Application Number 18834042
Status Pending
Filing Date 2023-01-30
First Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Kadota, Toshiaki
  • Iizuka, Shunsuke
  • Okamoto, Koichi
  • Nishino, Kenta

Abstract

A composition includes a polymer containing a repeating unit represented by Formula (1). —N(R′)—R3—N(R′)— is a structure derived from a dimer diamine that is unsubstituted or substituted by a substituent, R′, R1, and R2 each are independently a hydrogen atom, a halogen atom, a hydrocarbon group that is unsubstituted or substituted by a substituent and has 1 to 20 carbon atoms, a heterocyclic aliphatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, or a heterocyclic aromatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, and —NR1R2 may be a nitrogen-containing heterocyclic group which has 5 to 20 ring-constituting atoms and in which R1 and R2 are bonded to each other. A composition includes a polymer containing a repeating unit represented by Formula (1). —N(R′)—R3—N(R′)— is a structure derived from a dimer diamine that is unsubstituted or substituted by a substituent, R′, R1, and R2 each are independently a hydrogen atom, a halogen atom, a hydrocarbon group that is unsubstituted or substituted by a substituent and has 1 to 20 carbon atoms, a heterocyclic aliphatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, or a heterocyclic aromatic group that is unsubstituted or substituted by a substituent and has 3 to 20 carbon atoms, and —NR1R2 may be a nitrogen-containing heterocyclic group which has 5 to 20 ring-constituting atoms and in which R1 and R2 are bonded to each other.

IPC Classes  ?

  • C09D 179/02 - Polyamines
  • C08F 290/06 - Polymers provided for in subclass
  • C08G 73/02 - Polyamines
  • C08G 77/452 - Block- or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
  • C09D 151/08 - Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
  • C09D 183/10 - Block or graft copolymers containing polysiloxane sequences

44.

RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2024033501
Publication Number 2025/079408
Status In Force
Filing Date 2024-09-19
Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Dobashi,masato
  • Dei,satoshi
  • Ehara,kengo
  • Akita,shunpei
  • Hayashi,yuya
  • Hayashi,yukihiro
  • Kasai,tatsuya
  • Kawazu,tomoharu
  • Takada,kazuya

Abstract

Provided are a resist underlayer film-forming composition with which it is possible to form a resist underlayer film having excellent solvent resistance and excellent resist pattern rectangularity, and a method for manufacturing a semiconductor substrate. The resist underlayer film-forming composition contains a polymer having a repeating unit represented by formula (1), and a solvent. (In formula (1), R1represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. L1represents a 1+n-valent linking group. Ar1represents a monovalent group having an aromatic ring having 6 to 20 ring members. The aromatic ring has at least one halogen atom. n represents an integer of 1 to 3. When n is 2 or more, a plurality of the Ar1s are the same as or different from one another. L1has at least one group (A) selected from the group consisting of a group represented by formula (2-1), a group represented by formula (2-2), a group represented by formula (2-3), a group represented by formula (2-4), a group represented by formula (2-5), a group represented by formula (2-6), a group represented by formula (2-7), and a group represented by formula (2-8).) (In formulae (2-1) to (2-8), R7each independently represent a divalent organic group having 1 to 20 carbon atoms or a single bond. R8, R9, R10, and R13each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. Cy represents a ring structure constituted together with two carbon atoms in formula (2-2) and having 3 to 20 ring members. R11represents a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or a single bond. R12represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. ** represents a bond with an atom constituting Cy. Note that if R11is a single bond, R11is combined with **. * represents a bond with an atom constituting L1.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08F 12/32 - Monomers containing only one unsaturated aliphatic radical containing two or more rings
  • G03F 7/20 - ExposureApparatus therefor

45.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2024035269
Publication Number 2025/079475
Status In Force
Filing Date 2024-10-02
Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Abe,yudai
  • Oshiro,taku

Abstract

Provided are a radiation-sensitive composition and a pattern formation method that can exhibit, at the time of pattern formation, a sufficient level of sensitivity, LWR performance, pattern rectangularity, development defect suppression, CDU performance, and pattern circularity. This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); an onium salt that includes an organic acid anion including a cyclic structure, and an onium cation; and a solvent. (In formula (1), R1is a hydrogen atom or a C1-20 monovalent organic group, L is a single bond or a divalent linking group, R2is a C1-5 substituted or unsubstituted monovalent hydrocarbon group, R3is a C1-10 monovalent organic group, a hydroxy group, a nitro group, a cyano group, an amino group, a halogen atom, or a sulfanyl group, in cases in which there are a plurality of R3s present, the plurality of R3s may be the same as or different from each other, and n is an integer from 0 to 10.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 20/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • C08L 33/14 - Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/20 - ExposureApparatus therefor

46.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Application Number 18906361
Status Pending
Filing Date 2024-10-04
First Publication Date 2025-04-10
Owner JSR CORPORATION (Japan)
Inventor
  • Watanabe, Daichi
  • Tomihama, Munehisa
  • Nishikori, Katsuaki

Abstract

A radiation-sensitive resin composition includes: a first polymer and a compound. A solubility of the first polymer in a developer solution is capable of being altered by an action of an acid. The first polymer includes: a first structural unit containing a partial structure obtained by substituting a hydrogen atom of a carboxy group, a phenolic hydroxy group, or an amide group with a group represented by the following formula (1); and a second structural unit containing a phenolic hydroxy group. The compound includes: a monovalent radiation-sensitive onium cation containing an aromatic ring obtained by substituting at least one hydrogen atom with a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion. A radiation-sensitive resin composition includes: a first polymer and a compound. A solubility of the first polymer in a developer solution is capable of being altered by an action of an acid. The first polymer includes: a first structural unit containing a partial structure obtained by substituting a hydrogen atom of a carboxy group, a phenolic hydroxy group, or an amide group with a group represented by the following formula (1); and a second structural unit containing a phenolic hydroxy group. The compound includes: a monovalent radiation-sensitive onium cation containing an aromatic ring obtained by substituting at least one hydrogen atom with a fluorine atom or a fluorine atom-containing group; and a monovalent organic acid anion.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/22 - Esters containing halogen
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

47.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Application Number 18985206
Status Pending
Filing Date 2024-12-18
First Publication Date 2025-04-10
Owner JSR CORPORATION (Japan)
Inventor
  • Omiya, Takuya
  • Nishikori, Katsuaki
  • Kiriyama, Kazuya
  • Matsumura, Yuushi
  • Terada, Nozomi

Abstract

A radiation-sensitive resin composition includes a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a first structural unit represented by the following formula (1); a radiation-sensitive acid generating agent; and an acid diffusion control agent having a monovalent radiation-sensitive onium cation and a monovalent organic acid anion. A radiation-sensitive resin composition includes a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a first structural unit represented by the following formula (1); a radiation-sensitive acid generating agent; and an acid diffusion control agent having a monovalent radiation-sensitive onium cation and a monovalent organic acid anion.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 2/50 - Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
  • C08F 20/10 - Esters

48.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND RESIST BASE FILM FORMING COMPOSITION

      
Application Number 18910163
Status Pending
Filing Date 2024-10-09
First Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Komatsu, Hiroyuki
  • Dobashi, Masato
  • Tatsubo, Daiki
  • Yoshinaka, Sho
  • Akita, Shunpei
  • Dei, Satoshi
  • Yoneda, Eiji
  • Ehara, Kengo

Abstract

A method for manufacturing a semiconductor substrate includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The composition for forming a resist underlayer film includes a polymer and a solvent. The polymer includes a repeating unit (1) which includes an organic sulfonic acid anion moiety and an onium cation moiety.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
  • C08F 220/38 - Esters containing sulfur
  • C08G 61/12 - Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

49.

THERMOPLASTIC POLYMER FOAMED PARTICLE, THERMOPLASTIC POLYMER FOAMED PARTICLE MOLDED BODY, AND IDENTIFICATION METHOD FOR THERMOPLASTIC POLYMER FOAMED PARTICLE OR THERMOPLASTIC POLYMER FOAMED PARTICLE MOLDED BODY

      
Application Number JP2024030554
Publication Number 2025/069866
Status In Force
Filing Date 2024-08-27
Publication Date 2025-04-03
Owner
  • JSP CORPORATION (Japan)
  • JSP INTERNATIONAL SARL (France)
Inventor
  • Antonio Pereira
  • Valentin Kopf
  • Hira Akinobu

Abstract

Provided are: thermoplastic polymer foamed particles in which it is possible to identify the foamed particles themselves; and a thermoplastic polymer foamed particle molded body that, by being formed from the identifiable thermoplastic polymer foamed particles, can be identified without ruining the aesthetics thereof. Further provided is an identification method for the thermoplastic polymer foamed particles and/or the thermoplastic polymer foamed particle molded body. Thermoplastic polymer foamed particles (100) exhibit a light emission reaction derived from a light-emitting rare-earth element (10) through irradiation with electromagnetic waves. This thermoplastic polymer foamed particle molded body is formed through in-mold molding using the thermoplastic polymer foamed particles (100) and thereby exhibits a light emission reaction. This identification method for the thermoplastic polymer foamed particles or the thermoplastic polymer foamed particle molded body comprises: i) an electromagnetic wave irradiation step for irradiating the surfaces of the thermoplastic polymer foamed particles or the thermoplastic polymer foamed particle molded body with electromagnetic waves; and ii) a detection step for detecting, by using a detection device, a light emission reaction that is derived from a light-emitting rare-earth element and that occurs through the irradiating with the electromagnetic waves to obtain a light emission spectrum. A first method of the identification method further comprises iii-1) an identification step for observing the contrast between the light emission spectrum and a blank spectrum in which the light emission reaction derived from the light-emitting rare-earth element is not exhibited. A second method of the identification method further comprises iii-2) an identification step for comparing the light emission spectrum with a preset standard light emission spectrum in which the light emission reaction derived from the light-emitting rare-earth element is exhibited.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming
  • B29C 44/44 - Feeding the material to be shaped into a closed space, i.e. to make articles of definite length in the form of expandable particles or beads

50.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Application Number JP2024032863
Publication Number 2025/070119
Status In Force
Filing Date 2024-09-13
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Okazaki,satoshi
  • Inami,hajime
  • Abe,yudai

Abstract

The present invention provides a radiation-sensitive composition with which it is possible to from a resist film capable of exhibiting sensitivity, LWR performance, pattern rectangularity, CDU, pattern circularity, MEEF, and DOF at sufficient levels, and a pattern formation method. The radiation-sensitive composition contains: a first onium salt compound represented by formula (1); at least one type of second onium salt compound selected from the group consisting of a carboxylate compound represented by formula (2) and a carboxylic acid intramolecular salt compound represented by formula (3); a polymer including a structure unit having an acid dissociable group; and a solvent. (In formula (1), A is a (1+n)-valent organic group having 1 to 40 carbon atoms. Rf1and Rf2are each independently a hydrogen atom, a monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. If a plurality of Rf1s and a plurality of Rf2s are present, the plurality of Rf1s and the plurality of Rf211 +is a radiation-sensitive onium cation.) (In formula (2), R122 +is an organic cation.) (In formula (3), R233 + is a monovalent organic onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 20/26 - Esters containing oxygen in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

51.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number JP2024028429
Publication Number 2025/069728
Status In Force
Filing Date 2024-08-08
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor Maruyama Ken

Abstract

This radiation-sensitive composition contains: a polymer whose solubility with respect to a developer changes due to the action of an acid; and a compound having an anion and a radiation-sensitive onium cation, wherein the polymer has a structural unit including a group that generates sulfonic acid due to the action of radiation, the polymer includes an iodine group, and at least one of the anion and the radiation-sensitive onium cation includes an acid-dissociable group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 22/24 - Esters containing sulfur
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

52.

RESIN COMPOSITION, CURED ARTICLE, PREPREG, COPPER-CLAD LAMINATE BOARD, INTERLAYER INSULATION FILM, AND COMPOUND

      
Application Number JP2024031110
Publication Number 2025/069916
Status In Force
Filing Date 2024-08-30
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Kawashima Naoyuki
  • Kadota Toshiaki
  • Doi Takashi
  • Satonaka Eri
  • Higuchi Tetsuya

Abstract

Provided are: a resin composition comprising a compound (A) that comprises at least one compound selected from the group consisting of a compound (A1) having two or more partial structures represented by formula (1) and a compound (A2) represented by formula (2) and a polymer (B) having a group crosslinkable with the compound (A) and an aromatic ring; a cured article; a prepreg; a copper-clad laminate board; an interlayer insulation film; and a compound. The explanation for each substituent in the formulae is as described in the description.

IPC Classes  ?

  • C08L 101/02 - Compositions of unspecified macromolecular compounds characterised by the presence of specified groups
  • C08F 290/06 - Polymers provided for in subclass
  • C08F 290/14 - Polymers provided for in subclass
  • C08G 65/40 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols and other compounds
  • C08J 5/04 - Reinforcing macromolecular compounds with loose or coherent fibrous material
  • C08L 15/00 - Compositions of rubber derivatives
  • C08L 71/10 - Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
  • H05K 1/03 - Use of materials for the substrate

53.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Application Number JP2024032894
Publication Number 2025/070124
Status In Force
Filing Date 2024-09-13
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Okazaki,satoshi
  • Inami,hajime
  • Oshiro,taku

Abstract

Provided are a radiation-sensitive composition, a pattern formation method, and an onium salt compound that make it possible to achieve sufficient sensitivity, CDU performance, pattern circularity, development defect suppression, depth of focus, LWR performance, pattern rectangularity, and exposure latitude when a pattern is formed. A radiation-sensitive composition according to the present invention includes: an onium salt compound represented by formula (1); a polymer that includes a structural unit (I) represented by formula (2); and a solvent. (In formula (1), A is a C3–40 (1+n)-valent organic group that includes a cyclic structure. When A includes a straight-chain alkanediyl group, the number of carbons in the straight-chain alkanediyl group is 1 or 2. A does not include a cyclohexylcarbonyloxy structure. Rf1and Rf2are each independently a hydrogen atom, a C1–20 monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. When there are multiple Rf1and Rf2, the Rf1and Rf2are each the same or different. At least one of Rf1and Rf2is a fluorine atom or a monovalent fluorinated hydrocarbon group. m1 is an integer from 1 to 4, inclusive. m2 is 0 or 1. n is an integer from 1 to 3, inclusive. Z+is a monovalent radiation-sensitive onium cation. The number of fluorine atoms in Z+is no more than 8.) (In formula (2), RAis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. L is a single bond or a divalent linking group. W is a monocyclic lactone structure, a monocyclic carbonate structure, a monocyclic sultone structure, a monocyclic sulfone structure, or a monocyclic ether structure. R11is a C1–10 monovalent organic group, a cyano group, a nitro group, a hydroxy group, or an amino group. When there are multiple R11, the R11 are each the same or different. p is an integer from 0 to 3, inclusive. q is 0 or 1.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 20/26 - Esters containing oxygen in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

54.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024032896
Publication Number 2025/070125
Status In Force
Filing Date 2024-09-13
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Okazaki,satoshi
  • Inami,hajime
  • Egawa,fuyuki

Abstract

Provided is a radiation-sensitive composition and a pattern formation method with which sensitivity, LWR performance, pattern rectangularity, CDU performance, pattern circularity, MEEF, and exposure margin can be exhibited at a sufficient level when a pattern is formed. This radiation-sensitive resin composition comprises: a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2), a polymer containing structural units having an acid-dissociable group, and a solvent. (In formula (1), A is a C1–C40 (1+n)-valent organic group. Rf1and Rf2are each independently a hydrogen atom, a C1–C20 monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. When both Rf1and Rf2are present in pluralities, the plurality of Rf1and Rf2are the same as or different from each other. At least one of Rf1and Rf2is a fluorine atom or a monovalent fluorinated hydrocarbon group. R1and R2are each independently a hydrogen atom, a fluorine atom, or a C1–C20 monovalent organic group. When both R1and R2are present in pluralities, the plurality of R1and R211 +11 +.) (In formula (2), R433 −22 + is a monovalent organic cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 20/26 - Esters containing oxygen in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

55.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024027546
Publication Number 2025/062850
Status In Force
Filing Date 2024-08-01
Publication Date 2025-03-27
Owner JSR CORPORATION (Japan)
Inventor
  • Nonoyama,yoshiki
  • Yokoi,hiroki
  • Yamaguchi,shogo
  • Nishikori,katsuaki
  • Osawa,sosuke

Abstract

The present invention addresses the problem of providing: a radiation-sensitive composition and a pattern formation method with which it is possible to achieve sufficient levels of sensitivity, development contrast, development residue suppression property, and limit resolution property during formation of a pattern; and a polymer which can be used suitably for the radiation-sensitive composition. The radiation-sensitive composition contains: a polymer (A) containing a structural unit that has an acid-dissociable group, a structural unit that has a first organic acid anion (b1) and a first onium cation (c1) and includes a first acid-generating structure capable of generating, when exposed, an acid that induces the dissociation of the acid-dissociable group, and a structural unit that has a second organic acid anion (b2) and a second onium cation (c2) and includes a second acid-generating structure capable of generating, when exposed, an acid that does not induce the dissociation of the acid-dissociable group; and a solvent (B). The polymer (A) includes a partial structure represented by formula (i). (In formula (i), Ar represents a 5- to 20-membered aromatic ring having a valency of (m1 + m2 + m3 +1); X1represents a hydroxy group, a carboxy group, a sulfonic acid group, or a mercapto group, wherein, when there are a plurality of X1's, the plurality of X1's are the same as or different from each other; R1represents an acid-dissociable group or a non-acid-dissociable group, wherein, when there is one R1, the R1represents an acid-dissociable group, and when there are a plurality of R1's, at least one of the plurality of R1's represents an acid-dissociable group, and when there are a plurality of R1's, the plurality of R1's are the same as or different from each other; R2represents a halogen atom, a cyano group, a nitro group, or a monovalent organic group (excluding -COOR1), wherein, when there are a plurality of R2's, the plurality of R2's are the same as or different from each other; m1 represents an integer of 1-5, m2 represents an integer of 0-5, and m3 represents an integer of 0-6, wherein 2 ≤ m1 + m2; and "*" represents a bond to another structure in the polymer (A).)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

56.

EUVX

      
Serial Number 79423296
Status Pending
Filing Date 2025-03-21
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

57.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024025965
Publication Number 2025/057562
Status In Force
Filing Date 2024-07-19
Publication Date 2025-03-20
Owner JSR CORPORATION (Japan)
Inventor
  • Nonoyama,yoshiki
  • Yokoi,hiroki
  • Yamaguchi,shogo
  • Osawa,sosuke

Abstract

Provided are a radiation-sensitive composition and pattern formation method that can exhibit satisfactory levels of sensitivity, CDU, and development defect suppression during pattern formation; and a polymer that can be advantageously used in said radiation-sensitive composition. This radiation-sensitive composition contains: a polymer (A) comprising a structural unit (I) having an acid-dissociable group, a structural unit (II) that has a first organic acid anion (b1) and a first onium cation (c1) and that contains a first acid-generating structure that upon exposure generates an acid that induces dissociation of the acid-dissociable group, and a structural unit (III) that has a second organic acid anion (b2) and a second onium cation (c2) and that contains a second acid-generating structure that upon exposure generates an acid that does not induce dissociation of the acid-dissociable group; and a solvent (B). The polymer (A) has at least one alcoholic hydroxyl group, and the second onium cation (c2) is a radiation-sensitive onium cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

58.

METHOD FOR MANUFACTURING ELECTROCONDUCTIVE FILM, TOUCH PANEL, AND DISPLAY PANEL

      
Application Number JP2024029040
Publication Number 2025/057653
Status In Force
Filing Date 2024-08-15
Publication Date 2025-03-20
Owner JSR CORPORATION (Japan)
Inventor
  • Yasuda,hiroyuki
  • Katsui,hiromitsu
  • Oono,ryuuzou
  • Yasuike,nobuo

Abstract

Provided are an organic resin material that makes it possible to uniformly fix an electroconductive carbon material over the entirety of an electroconductive film formation region, a method for manufacturing an electroconductive film using the organic resin material, and a touch panel and a display panel each comprising an electroconductive film manufactured by means of the manufacturing method. The method comprises: a step (A) for applying an organic resin material containing a polymer obtained by reacting an aliphatic tetracarboxylic acid dianhydride with an aliphatic diamine onto a base material to form an organic resin layer; a step (B) for applying a dispersion liquid containing a dispersant and carbon nanotubes onto the organic resin layer after the step (A) to form a coating film; a step (C) for drying the coating film after the step (B); and a step (D) for depositing a dispersant extraction liquid after the step (C), thereby removing the dispersant from the coating film.

IPC Classes  ?

  • H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
  • B05D 1/36 - Successively applying liquids or other fluent materials, e.g. without intermediate treatment
  • B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
  • B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials

59.

SUBSTRATE FOR SEMICONDUCTOR PRODUCTION, METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR PRODUCTION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2024031111
Publication Number 2025/053057
Status In Force
Filing Date 2024-08-30
Publication Date 2025-03-13
Owner JSR CORPORATION (Japan)
Inventor
  • Yamada,shuhei
  • Yoneda,eiji

Abstract

The present invention provides: a substrate for semiconductor production which is excellent in suppression of collapse of a resist pattern; a method for producing a substrate for semiconductor production; and a method for producing a semiconductor substrate. Provided is a substrate for semiconductor production comprising a substrate that has a thin film, wherein the thin film has a group derived from a compound represented by formula (1). (In formula (1), R1 is an C1-40 n-valent organic group. n is an integer of 1-4.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/004 - Photosensitive materials
  • G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F 7/20 - ExposureApparatus therefor
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

60.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18953228
Status Pending
Filing Date 2024-11-20
First Publication Date 2025-03-13
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Inami, Hajime
  • Furukawa, Tsuyoshi
  • Otsuka, Noboru
  • Miyao, Kensuke

Abstract

A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1), a resin including a structural unit having an acid-dissociable group, and an alcohol-based solvent having a boiling point of 90° C. or higher. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group, one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group, m1 is an integer of 1 to 3; m2 is an integer of 0 to 8; and Z1+ represents a monovalent radiation-sensitive onium cation. A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1), a resin including a structural unit having an acid-dissociable group, and an alcohol-based solvent having a boiling point of 90° C. or higher. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group, one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group, m1 is an integer of 1 to 3; m2 is an integer of 0 to 8; and Z1+ represents a monovalent radiation-sensitive onium cation.

IPC Classes  ?

  • G03F 7/029 - Inorganic compoundsOnium compoundsOrganic compounds having hetero atoms other than oxygen, nitrogen or sulfur
  • G03F 7/004 - Photosensitive materials

61.

METHOD FOR MANUFACTURING SURFACE-TREATED SUBSTRATE, METHOD FOR SELECTIVELY MODIFYING SUBSTRATE SURFACE, AND COMPOSITION FOR SEMICONDUCTOR TREATMENT

      
Application Number JP2024024786
Publication Number 2025/052776
Status In Force
Filing Date 2024-07-09
Publication Date 2025-03-13
Owner JSR CORPORATION (Japan)
Inventor
  • Komatsu, Hiroyuki
  • Suhara, Ryou
  • Hagi, Shin-Ichirou
  • Yamada, Shota
  • Akagi, Soichiro
  • Mori, Kosuke

Abstract

A method for manufacturing a surface-treated substrate according to the present invention includes a step for applying a composition to the surface of a substrate including a first region and a second region different in material from the first region to selectively modify the surface of the substrate. The composition contains: compound (A) that is at least one compound selected from the group consisting of a compound represented by formula (1), a compound represented by formula (2), and a compound represented by formula (3); and 1 mass% or more of water with respect to the total amount of the composition. R1, R4, and R8 are each independently a monovalent chain group having 9 or more carbon atoms.

IPC Classes  ?

  • H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups

62.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18951794
Status Pending
Filing Date 2024-11-19
First Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Inami, Hajime
  • Furukawa, Tsuyoshi
  • Otsuka, Noboru
  • Miyao, Kensuke

Abstract

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group; one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z1+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group including a cyclic structure; Rf21 and Rf22 each independently represent a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z2+ represents a monovalent radiation-sensitive onium cation. A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom or a monovalent hydrocarbon group; one of Rf11 and Rf12 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z1+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group including a cyclic structure; Rf21 and Rf22 each independently represent a fluorine atom or a monovalent fluorinated hydrocarbon group; and Z2+ represents a monovalent radiation-sensitive onium cation.

IPC Classes  ?

  • G03F 7/029 - Inorganic compoundsOnium compoundsOrganic compounds having hetero atoms other than oxygen, nitrogen or sulfur
  • G03F 7/004 - Photosensitive materials

63.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18951861
Status Pending
Filing Date 2024-11-19
First Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Inami, Hajime
  • Furukawa, Tsuyoshi
  • Otsuka, Noboru
  • Miyao, Kensuke

Abstract

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and Z+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group; one of Rf21 and Rf22 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar is a monovalent organic group including an aromatic ring; R5, R6, R7, and R8 each independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group; and X is a single bond or a divalent hetero atom-containing group. A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or the like; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and Z+ represents a monovalent radiation-sensitive onium cation. R4 is a monovalent organic group; one of Rf21 and Rf22 is a fluorine atom, and the other is a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar is a monovalent organic group including an aromatic ring; R5, R6, R7, and R8 each independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group; and X is a single bond or a divalent hetero atom-containing group.

IPC Classes  ?

  • G03F 7/029 - Inorganic compoundsOnium compoundsOrganic compounds having hetero atoms other than oxygen, nitrogen or sulfur
  • G03F 7/004 - Photosensitive materials

64.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18952057
Status Pending
Filing Date 2024-11-19
First Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Inami, Hajime
  • Furukawa, Tsuyoshi
  • Otsuka, Noboru
  • Miyao, Kensuke

Abstract

A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and one of Rf11 and Rf12 is a fluorine atom, and the other is a hydrogen atom, a fluorine atom, or a monovalent fluorinated hydrocarbon group. R4 is a monovalent organic group in which neither a fluorine atom nor a fluorinated hydrocarbon group is bonded to an atom adjacent to the sulfur atom. A radiation-sensitive resin composition includes: a first onium salt compound represented by formula (1); a second onium salt compound represented by formula (2); a resin including a structural unit having an acid-dissociable group; and a solvent. R1 is a substituted or unsubstituted monovalent hydrocarbon group or a group including a divalent hetero atom-containing group between two adjacent carbon atoms of the hydrocarbon group; R2 and R3 are each independently a hydrogen atom, a fluorine atom, or the like; and one of Rf11 and Rf12 is a fluorine atom, and the other is a hydrogen atom, a fluorine atom, or a monovalent fluorinated hydrocarbon group. R4 is a monovalent organic group in which neither a fluorine atom nor a fluorinated hydrocarbon group is bonded to an atom adjacent to the sulfur atom.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • C08F 220/36 - Esters containing nitrogen containing oxygen in addition to the carboxy oxygen
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

65.

PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR RESIST UNDERLAYER FORMATION

      
Application Number JP2024029817
Publication Number 2025/047565
Status In Force
Filing Date 2024-08-22
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Hirasawa,kengo
  • Tanaka,ryotaro
  • Oka,yuki
  • Yoshinaka,sho

Abstract

The present invention provides: a production method for a semiconductor substrate that makes it possible to form a resist underlayer having excellent pattern rectangularity; and a composition for resist underlayer formation. Provided is a production method for a semiconductor substrate, said method comprising: a step for applying a composition for resist underlayer formation directly or indirectly onto a substrate; a step for applying a composition resist film formation directly or indirectly onto a resist underlayer formed in the step for applying the composition for resist underlayer formation; a step for exposing a resist film formed in the step for applying the composition resist film formation; and a step for developing at least the exposed resist film. The composition for resist underlayer formation contains a compound and a solvent. The compound comprises -ORA, where RAis a hydrogen atom, a C1-10 monovalent heteroatom-containing group, or a C1-10 monovalent organic group (excluding C1-10 monovalent heteroatom-containing groups). Among the structures constituting RA, when the proportion of hydrogen atoms is represented as x, the proportion of the C1-10 monovalent heteroatom-containing group is represented as y, and the proportion of the C1-10 monovalent organic group is represented as z, in the entirety of the compound, x+y+z=100, and the relations 20≤x≤95 and 5≤y≤80 are satisfied. The compound is a polymer which has a repeating unit represented by formula (1), an aromatic-ring-containing compound which has a molecular weight of 750-3,000 and which comprises -ORA, or a combination of these. (In formula (1), Ar1is a divalent group having a 5- to 40-membered aromatic ring. R0is a hydrogen atom or a C1-40 monovalent organic group. R1is a C1-40 monovalent organic group. At least one selected from the group consisting of Ar1, R0, and R1has -ORA.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08G 61/10 - Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aromatic carbon atoms, e.g. polyphenylenes

66.

PHOTOSENSITIVE COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING SAME, LIQUID CRYSTAL DEVICE, SEMICONDUCTOR DEVICE, POLYMER, AND COMPOUND

      
Application Number JP2024030378
Publication Number 2025/047698
Status In Force
Filing Date 2024-08-27
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Murakami, Yoshitaka
  • Okada, Takashi
  • Satou, Mitsuo

Abstract

This photosensitive composition contains: a polymer derived from a monomer having a C1-C3 halogenated alkyl group containing at least one hydrogen atom, and including a structural unit (a1) having a hydroxyl group; and a photosensitive compound.

IPC Classes  ?

  • G03F 7/023 - Macromolecular quinonediazidesMacromolecular additives, e.g. binders
  • C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

67.

ARX

      
Application Number 1843142
Status Registered
Filing Date 2025-01-31
Registration Date 2025-01-31
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

68.

CELL ADHESIVE PARTICLE AND PARTICLE PRODUCTION METHOD

      
Application Number JP2024024619
Publication Number 2025/047128
Status In Force
Filing Date 2024-07-08
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Kikuchi, Masahiro
  • Kobayashi, Kunihiko
  • Sakaguchi, Sayaka
  • Tomita, Koki
  • Kawabata, Shingo

Abstract

The present invention provides particles having excellent cell adhesiveness. Cell adhesive particles according to the present invention each contain, in a molecule, a structural unit having at least one selected from groups represented by formula (1) and groups represented by formula (2). [In formula (1), R1represents an alkanediyl group having 2-10 carbon atoms, R2and R3each independently represent a hydrogen atom or an alkyl group having 1-10 carbon atoms, and * represents a binding site.] [In formula (2), R4represents an alkanediyl group having 2-10 carbon atoms, R5-R7each independently represent a hydrogen atom or an alkyl group having 1-10 carbon atoms, X- represents a counter anion, and * represents a binding site.]

IPC Classes  ?

  • C12M 3/00 - Tissue, human, animal or plant cell, or virus culture apparatus
  • C08F 2/18 - Suspension polymerisation
  • C08F 20/12 - Esters of monohydric alcohols or phenols

69.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024026468
Publication Number 2025/047218
Status In Force
Filing Date 2024-07-24
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Nonoyama,yoshiki
  • Yokoi,hiroki
  • Yamaguchi,shogo
  • Osawa,sosuke

Abstract

Provided are a radiation-sensitive composition and a pattern formation method capable of exhibiting, at sufficient levels, sensitivity, development contrast, development defect suppression property, and limit resolution when forming patterns. This radiation-sensitive composition contains a polymer and a solvent. The polymer includes: a structural unit (I) that has an iodo group and that also has an acid-dissociable group; a structural unit (II) that has a first organic acid anion and a first onium cation and that includes a first acid-generating structure for generating, through exposure to light, an acid that induces dissociation of the acid-dissociable group; and a structural unit (III) that has a second organic acid anion and a second onium cation, and that includes a second acid-generating structure for generating, through exposure to light, an acid that does not induce dissociation of the acid-dissociable group.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/22 - Esters containing halogen
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

70.

AEX

      
Application Number 1841925
Status Registered
Filing Date 2025-01-28
Registration Date 2025-01-28
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

71.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND FILM-FORMING COMPOSITION

      
Application Number JP2024027062
Publication Number 2025/041533
Status In Force
Filing Date 2024-07-30
Publication Date 2025-02-27
Owner JSR CORPORATION (Japan)
Inventor
  • Kimata,hironori
  • Serizawa,ryuichi
  • Ozaki,yuki

Abstract

Provided are: a semiconductor substrate production method that uses a metal-containing resist underlayer film capable of imparting favorable rectangularity to a metal resist pattern; and an underlayer film-forming composition for a first metal-containing resist. This semiconductor substrate production method includes a step for coating a substrate with a film-forming composition. The film-forming composition contains a solvent and a metal compound comprising at least a metal atom and an organic acid. The organic acid is a compound represented by formula (1). (In formula (1), R1is a hydroxy group, a nitro group, a halogen atom or a C1-20 monovalent organic group (excluding the structure corresponding to -L1-COOH and the structure corresponding to X in the formula). Ar1is a C3-30 r+s+t-valent aromatic ring structure. X is a crosslinkable group. L1represents a single bond or a divalent linking group. t is an integer of 0-2. When t is 2, the two R1are the same or different. r is an integer of 1-4. When r is 2 or more, the plurality of X are the same or different. s is an integer of 1-4. When s is 2 or more, the plurality of L1 are the same or different.)

IPC Classes  ?

  • H01L 21/314 - Inorganic layers
  • C09D 7/63 - Additives non-macromolecular organic
  • C09D 149/00 - Coating compositions based on homopolymers or copolymers of compounds having one or more carbon-to-carbon triple bondsCoating compositions based on derivatives of such polymers
  • C09D 201/00 - Coating compositions based on unspecified macromolecular compounds
  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • H01L 21/3065 - Plasma etchingReactive-ion etching

72.

JSR NSC

      
Serial Number 79421714
Status Pending
Filing Date 2025-02-27
Owner JSR CORPORATION (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemical source material for the deposition of thin films upon semiconductor wafers for the manufacture of semiconductors; industrial chemicals for use in the manufacture of semiconductors; industrial chemicals; adhesives for industrial purposes; chemical preparations for use in photography; photoresists; unprocessed artificial resins as raw materials in the form of powders, liquids or pastes; unprocessed plastics in primary form.

73.

PHOTOSENSITIVE RESIN COMPOSITION FOR PRODUCING PLATED MOLDED ARTICLE, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE

      
Application Number JP2024028954
Publication Number 2025/041685
Status In Force
Filing Date 2024-08-14
Publication Date 2025-02-27
Owner JSR CORPORATION (Japan)
Inventor
  • Horikawa Shuhei
  • Matsumoto Tomoyuki
  • Nishiguchi Naoki
  • Okamoto Erika

Abstract

An embodiment of the present invention relates to a photosensitive resin composition for producing a plated molded article, a method for producing a resist pattern film, and a method for producing a plated molded article. Said composition contains: a (meth)acrylic polymer (A1) having an acid dissociable group; a photoacid generator (B); at least one compound (C) selected from the group consisting of an organic carboxylic acid compound (C1) having a pKa of 4.5 or less, an organic carboxylic acid anhydride (C2) having a pKa of 4.5 or less, and a polyhydric phenol compound (C3) having a CLogP of 4.5 or less; and a solvent (G).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking

74.

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE

      
Application Number JP2024028955
Publication Number 2025/041686
Status In Force
Filing Date 2024-08-14
Publication Date 2025-02-27
Owner JSR CORPORATION (Japan)
Inventor
  • Matsumoto Tomoyuki
  • Higuchi Tetsuya
  • Kiriyama Takashi
  • Horikawa Shuhei
  • Nishiguchi Naoki

Abstract

One embodiment of the present invention relates to a photosensitive resin composition, a method for producing a resist pattern film, or a method for producing a plated shaped article. The photosensitive resin composition contains a polymer (A1) that is selected from among an alkali-soluble polymer and a polymer having an acid dissociable group, a polymer (A2) that is selected from among an alkali-soluble polymer and a polymer having an acid dissociable group, a photoacid generator (B), and a solvent (C). The glass transition temperature (Tg) of the polymer (A2) is -45°C to 25°C, and the glass transition temperature (Tg) of the polymer (A1) is higher than the Tg of the polymer (A2) by 55°C to 120°C.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking

75.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024021937
Publication Number 2025/037476
Status In Force
Filing Date 2024-06-17
Publication Date 2025-02-20
Owner JSR CORPORATION (Japan)
Inventor
  • Miyata, Hiromu
  • Kitamura, Koki
  • Osawa, Sosuke

Abstract

This radiation-sensitive composition comprises a polymer which contains, in the same molecule, a first structural unit having an acid-dissociable group, a second structural unit having a radiation-sensitive onium cation and a sulfonic acid anion, and a third structural unit having a radiation-sensitive onium cation and a carboxylic acid anion, and in which the content ratio of the first structural unit is at least 55 mol% with respect to all the structural units.

IPC Classes  ?

76.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024021936
Publication Number 2025/032972
Status In Force
Filing Date 2024-06-17
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Osawa, Sosuke
  • Hae, Takuma
  • Sakai, Hikaru

Abstract

This radiation-sensitive composition contains a polymer containing: a first structural unit having a radiation-sensitive onium cation and a sulfonic acid anion; a second structural unit having a radiation-sensitive onium cation and a carboxylic acid anion; and a third structural unit represented by formula (1). In formula (1), R1represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. B1is a single bond or a divalent hydrocarbon group. L1is a divalent organic group. R2 is an acid-decomposable group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

77.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR METAL-CONTAINING RESIST

      
Application Number JP2024025960
Publication Number 2025/033138
Status In Force
Filing Date 2024-07-19
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Kasai,tatsuya
  • Takada,kazuya

Abstract

Provided are a method for manufacturing a semiconductor substrate with which it is possible to form an underlayer film for a metal-containing resist capable of achieving excellent rectangularity in a resist pattern, and a composition for forming an underlayer film for a metal-containing resist. This method for manufacturing a semiconductor substrate comprises: a step for directly or indirectly applying, to a substrate, a composition for forming an underlayer film for a metal-containing resist; a step for forming a metal-containing resist film on an underlayer film for a metal-containing resist, the underlayer film being formed by means of the step for applying the composition for forming an underlayer film for a metal-containing resist; a step for exposing the metal-containing resist film to extreme ultraviolet rays; and a step for developing at least the exposed metal-containing resist film. The composition for forming an underlayer film for a metal-containing resist contains a solvent and a compound having a structural unit (α) represented by formula (1-1). (In formula (1-1), a is an integer of 1-3. R1is a C1-20 monovalent organic group, a hydroxy group, or a halogen atom. b is an integer of 0-2. When b is 2, the two R1 are the same as each other or are different from one another. However, a + b is 3 or less.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08G 77/12 - Polysiloxanes containing silicon bound to hydrogen
  • C08G 77/24 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen halogen-containing groups
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

78.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024021935
Publication Number 2025/032971
Status In Force
Filing Date 2024-06-17
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Osawa, Sosuke
  • Kobayashi, Atsushi
  • Motoyama, Kazuki

Abstract

This radiation-sensitive composition contains a polymer containing: a first structural unit having a radiation-sensitive onium cation and a sulfonic acid anion; a second structural unit having a radiation-sensitive onium cation and a carboxylic acid anion; and a third structural unit represented by formula (1). In formula (1), Ar1is a group obtained by removing (s+t+1) hydrogen atoms from an aromatic hydrocarbon ring. s is an integer of 1 or higher. t is an integer of 1 or higher. R2is a hydroxy group, an alkyl group, an alkoxy group or -OX1. X1 is an acid-decomposable group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

79.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT

      
Application Number JP2024024568
Publication Number 2025/033056
Status In Force
Filing Date 2024-07-08
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Abe,yudai
  • Nishii,atsuto
  • Mita,michihiro
  • Inami,hajime
  • Egawa,fuyuki

Abstract

Provided are: a radiation-sensitive composition capable of exhibiting excellent sensitivity, CDU performance, DOF performance, pattern circularity, LWR performance, pattern rectangularity, and development defect suppression when forming a pattern; a pattern formation method; and an onium salt. This radiation-sensitive composition contains an onium salt represented by formula (1) (hereinafter, also referred to as an "onium salt (1)"), a polymer containing a structural unit (I) having an acid-dissociable group, and a solvent. (In formula (1), Ar1is an (a1 + b1 +1)-valent aromatic ring. Ar2is an (a2 + b2 +1)-valent aromatic ring. X1and X2are each independently a monovalent organic group having 1-20 carbon atoms, a cyano group, a nitro group, or a halogen atom. When multiple X1and multiple X2are present, the multiple X1and the multiple X2are each identical to or different from each other. Y1is a monovalent organic group having 4-20 carbon atoms and bonded via Ar122-, or a monovalent perfluoroalkyl group having 1-20 carbon atoms. When multiple Y1are present, the multiple Y1are identical to or different from each other. Y2is a monovalent organic group having 4-20 carbon atoms and bonded via Ar222-, or a monovalent perfluoroalkyl group having 1-20 carbon atoms. When multiple Y2are present, the multiple Y2are identical to or different from each other. L is a single bond or a divalent linking group having 1-5 carbon atoms. a1, a2, b1, and b2 are each independently an integer of 0-5. When the aromatic ring of Ar2 is a benzene ring, b1 + b2 ≥ 1.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 63/04 - Monocyclic monocarboxylic acids
  • C07C 65/21 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
  • C07C 255/56 - Carboxylic acid nitriles having cyano groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing cyano groups and doubly-bound oxygen atoms bound to the carbon skeleton
  • C07C 317/14 - SulfonesSulfoxides having sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings
  • C07D 207/34 - Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
  • C07D 209/30 - IndolesHydrogenated indoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, directly attached to carbon atoms of the hetero ring
  • C07D 209/88 - CarbazolesHydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
  • C07D 307/56 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
  • C07D 307/79 - Benzo [b] furansHydrogenated benzo [b] furans with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
  • C07D 307/88 - Benzo [c] furansHydrogenated benzo [c] furans with one oxygen atom directly attached in position 1 or 3
  • C07D 317/22 - Radicals substituted by singly bound oxygen or sulfur atoms etherified
  • C07D 317/62 - Methylenedioxybenzenes or hydrogenated methylenedioxybenzenes, unsubstituted on the hetero ring with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to atoms of the carbocyclic ring
  • C07D 317/72 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
  • C07D 333/28 - Halogen atoms
  • C07D 333/62 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the hetero ring
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

80.

PHOTOSENSITIVE COMPOSITION, PATTERN FILM AND METHOD FOR PRODUCING SAME, DISPLAY DEVICE, OPTICAL MATERIAL, AND SOLID-STATE IMAGING ELEMENT

      
Application Number JP2024027984
Publication Number 2025/033396
Status In Force
Filing Date 2024-08-06
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Matsumura, Nobuji
  • Akiike, Toshiyuki

Abstract

Disclosed is a photosensitive composition which contains the components (A) and (B) described below. (A): One or more Si-containing compounds selected from among (A1) and (A2) described below (A1): An Si-containing compound that has a structural unit a1 having an alkali-soluble group and a polymerizable group, and a structural unit a2 having a polymerizable group or a structural unit a3 having an alkali-soluble group (A2): An Si-containing compound that has a structural unit a2 having a polymerizable group and a structural unit a3 having an alkali-soluble group (B): Photopolymerization initiator

IPC Classes  ?

  • G03F 7/075 - Silicon-containing compounds
  • C08F 299/08 - Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polysiloxanes
  • C08G 77/20 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups
  • C08G 77/38 - Polysiloxanes modified by chemical after-treatment
  • G02B 1/111 - Anti-reflection coatings using layers comprising organic materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
  • H01L 27/146 - Imager structures

81.

METHOD FOR PRODUCING POLYAMIDE-BASED RESIN EXPANDED BEADS AND METHOD FOR PRODUCING POLYAMIDE-BASED RESIN EXPANDED MOLDED ARTICLE

      
Application Number 18782655
Status Pending
Filing Date 2024-07-24
First Publication Date 2025-02-06
Owner JSP CORPORATION (Japan)
Inventor Hayashi, Tatsuya

Abstract

A polyamide-based resin melt obtained by melt-kneading a base resin, an organic compound-based additive (A), and an iodide-based additive (X) is granulated to prepare polyamide-based resin particles. The polyamide-based resin particles are expanded by using a physical blowing agent to produce polyamide-based resin expanded beads. The polyamide-based resin expanded beads are in-mold molded to produce a polyamide-based resin expanded molded article. The organic compound-based additive (A) is made of a hindered phenol-based compound and/or an organophosphorus-based compound. The iodide-based additive (X) is made of copper iodide, or copper iodide and potassium iodide.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • C08J 3/12 - Powdering or granulating
  • C08J 3/20 - Compounding polymers with additives, e.g. colouring
  • C08J 9/00 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof
  • C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent

82.

POLYAMIDE RESIN FOAMED PARTICLES AND METHOD FOR PRODUCING SAME

      
Application Number 18886123
Status Pending
Filing Date 2024-09-16
First Publication Date 2025-02-06
Owner JSP Corporation (Japan)
Inventor
  • Hayashi, Tatsuya
  • Hira, Akinobu

Abstract

A polyamide-based resin expanded bead comprising a foam layer formed by expanding a polyamide-based resin, wherein on a first DSC curve and a second DSC curve, the first DSC curve has a melting peak (intrinsic peak) having a peak top temperature on a low temperature side equal to or lower than a peak top temperature of a melting peak of the second DSC curve and a melting peak (high temperature peak) having a peak top temperature on a high temperature side exceeding the peak top temperature of the second DSC curve, and, the peak top temperature of the melting peak of the second DSC curve is 180° C. or higher and 280° C. or lower, and the polyamide-based resin expanded bead has an apparent density of 10 to 300 kg/m3 and a closed cell ratio of 85% or more.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

83.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND SILICON-CONTAINING COMPOSITION

      
Application Number 18919818
Status Pending
Filing Date 2024-10-18
First Publication Date 2025-02-06
Owner JSR CORPORATION (Japan)
Inventor
  • Sakai, Kazunori
  • Kasai, Tatsuya
  • Suzuki, Ayaka
  • Nii, Akitaka

Abstract

A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms. A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • C08K 5/5419 - Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
  • C09D 133/06 - Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/075 - Silicon-containing compounds
  • G03F 7/16 - Coating processesApparatus therefor
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

84.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND RESIST UNDERLAYER FILM-FORMING COMPOSITION

      
Application Number JP2024026067
Publication Number 2025/028314
Status In Force
Filing Date 2024-07-22
Publication Date 2025-02-06
Owner JSR CORPORATION (Japan)
Inventor
  • Dobashi,masato
  • Akita,shunpei
  • Dei,satoshi
  • Hayashi,yuya
  • Miyauchi,hiroyuki
  • Takanashi,kazunori
  • Takada,kazuya
  • Kasai,tatsuya

Abstract

Provided are: a resist underlayer film-forming composition that is capable of forming a resist underlayer film that can impart excellent pattern rectangularity to a resist pattern; and a method for producing a semiconductor substrate. The method for producing a semiconductor substrate comprises: a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition; a step for forming a resist film on the resist underlayer film formed by the aforementioned step for coating a resist underlayer film-forming composition; a step for exposing the resist film to radiation; and a step for developing at least the exposed resist film. The resist underlayer film-forming composition contains a polymer and a solvent. The polymer contains a repeating unit (1) having an organosulfonate anion moiety and an onium cation moiety, a repeating unit (2) represented by formula (2), and a repeating unit (3) represented by formula (3). (In formula (2), R4is a group selected from the group consisting of groups represented by any of formulas (2-1) to (2-8).) (In formula (3), R6is a group that contains a substructure represented by formula (3-1) or (3-2).) (In formulas (3-1) and (3-2), X1and X2 are each independently an oxygen atom, a sulfur atom, or a nitrogen atom. A formula in which a solid line and a broken line are combined indicates a single bond or a double bond each independently.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08F 220/38 - Esters containing sulfur
  • C08F 228/02 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
  • G03F 7/095 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

85.

POLYPROPYLENE RESIN FOAM PARTICLES

      
Application Number JP2024026133
Publication Number 2025/028323
Status In Force
Filing Date 2024-07-22
Publication Date 2025-02-06
Owner JSP CORPORATION (Japan)
Inventor Koshita Nobumasa

Abstract

These polypropylene resin foam particles each have a foam core layer composed of a polypropylene resin, and a coating layer covering the foam core layer. The coating layer is composed of linear low-density polyethylene. The mass ratio of the coating layer to the foam core layer is 0.005-0.05. The polypropylene resin constituting the foam core layer satisfies a prescribed condition (i) or (ii). Said foam particles can remarkably reduce the steam pressure at the time of in-mold molding, can shorten the curing time, and furthermore makes it possible to obtain a foam particle molded article that has a desired shape and is excellent in appearance even when the curing time is shortened.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

86.

ANTIFERROMAGNETIC BODY MATERIAL, TWO-LAYER FILM OF MAGNETIC BODY AND INSULATOR, TUNNEL MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY

      
Application Number JP2024026734
Publication Number 2025/028421
Status In Force
Filing Date 2024-07-26
Publication Date 2025-02-06
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
  • TOHOKU UNIVERSITY (Japan)
Inventor
  • Toga,yuuta
  • Koretsune,takashi
  • Tanaka,katsuhiro
  • Nakatsuji,satoru

Abstract

31-xx1-pp3qr1-q-r1-q-r (0

IPC Classes  ?

  • H10N 50/10 - Magnetoresistive devices
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/20 - Spin-polarised current-controlled devices
  • H10N 52/00 - Hall-effect devices

87.

ARX

      
Serial Number 79418627
Status Pending
Filing Date 2025-01-31
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

88.

ENZYME SENSOR AND ENZYME SENSOR SYSTEM

      
Application Number 18917137
Status Pending
Filing Date 2024-10-16
First Publication Date 2025-01-30
Owner JSR Corporation (Japan)
Inventor
  • Fujioka, Masayasu
  • Ito, Akinori
  • Hamada, Kenichi

Abstract

An enzyme sensor may be configured to measure a measurement target substance included in a secretion of a living body. The enzyme sensor may include a layered structure including, in this order, (a) an absorber layer configured to absorb the secretion, (b) an enzyme layer containing an enzyme, (c) a mediator layer, and (d) an electrode part. The absorber layer may include a polymeric material having a chemically bound crosslinked structure.

IPC Classes  ?

  • A61B 5/1486 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using chemical or electrochemical methods, e.g. by polarographic means using enzyme electrodes, e.g. with immobilised oxidase
  • A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
  • C12Q 1/00 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions
  • G01N 27/327 - Biochemical electrodes
  • G01N 27/416 - Systems
  • G06F 9/06 - Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
  • G06F 15/00 - Digital computers in generalData processing equipment in general

89.

AEX

      
Serial Number 79418146
Status Pending
Filing Date 2025-01-28
Owner JSR Corporation (Japan)
NICE Classes  ? 01 - Chemical and biological materials for industrial, scientific and agricultural use

Goods & Services

Chemicals for use in industry; industrial chemicals for use in the manufacture of semiconductors; photoresists; chemical compositions for developing photographs; chemical preparations for use in photography; photographic sensitizers; photographic developers.

90.

METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT

      
Application Number JP2024025310
Publication Number 2025/018303
Status In Force
Filing Date 2024-07-12
Publication Date 2025-01-23
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Inukai Kouji
  • Toga Yuuta
  • Nakatsuji Satoru
  • Idzuchi Hiroshi

Abstract

Provided is a method for manufacturing a magnetic tunnel junction element provided with a magnetic tunnel junction layer and a metal layer in the stated order directly or indirectly on a substrate, the method comprising: a step for applying, to the metal layer, a resist composition containing a polymer that has a structural unit containing an aromatic ring; a step for exposing a resist film formed through the application step; a step for developing the exposed resist film; and a step for etching the magnetic tunnel junction layer and the metal layer using, as a mask, a resist pattern formed through the development step.

IPC Classes  ?

  • H10N 50/01 - Manufacture or treatment
  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking
  • H05K 1/03 - Use of materials for the substrate
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/20 - Spin-polarised current-controlled devices

91.

METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT

      
Application Number JP2024025315
Publication Number 2025/018305
Status In Force
Filing Date 2024-07-12
Publication Date 2025-01-23
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Inukai Kouji
  • Toga Yuuta
  • Nakatsuji Satoru
  • Idzuchi Hiroshi

Abstract

A method for manufacturing a magnetic tunnel junction element comprising a magnetic tunnel junction layer and a metal layer directly or indirectly on a substrate in this order, the method comprising: a step for forming a resist underlayer film on the metal layer; a step for forming a silicon oxide film on the resist underlayer film; and a step for forming a resist film on the silicon oxide film, wherein the resist underlayer film is formed from a resist underlayer film-forming composition containing a compound having an aromatic ring and a solvent.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/01 - Manufacture or treatment
  • H10N 50/10 - Magnetoresistive devices
  • H10N 50/20 - Spin-polarised current-controlled devices

92.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND UNDERLAYER FILM-FORMING COMPOSITION FOR FIRST METAL-CONTAINING RESIST

      
Application Number JP2024024583
Publication Number 2025/013817
Status In Force
Filing Date 2024-07-08
Publication Date 2025-01-16
Owner JSR CORPORATION (Japan)
Inventor
  • Serizawa,ryuichi
  • Yamada,shuhei
  • Ozaki,yuki
  • Kimata,hironori

Abstract

Provided are: a method for manufacturing a semiconductor substrate that uses an underlayer film for a metal-containing resist, the underlayer film capable of imparting good rectangularity to a metal resist pattern; and an underlayer film-forming composition for a first metal-containing resist. This method for manufacturing a semiconductor substrate includes: a step for directly or indirectly coating a substrate with an underlayer film-forming composition for a first metal-containing resist; a step for forming a metal-containing resist film, which is made of a second metal-containing resist forming material, on an underlayer film for a metal-containing resist, the underlayer film having been formed by the underlayer film-forming composition coating step for the first metal-containing resist; a step for exposing the metal-containing resist film to extreme ultraviolet rays; and a step for developing the exposed metal-containing resist film. The underlayer film-forming composition for the first metal-containing resist contains a solvent and a metal compound composed of at least a metal atom and an organic acid.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/004 - Photosensitive materials
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

93.

POLYAMIDE RESIN FOAMED PARTICLES AND METHOD FOR PRODUCING SAME

      
Application Number 18886548
Status Pending
Filing Date 2024-09-16
First Publication Date 2025-01-09
Owner JSP Corporation (Japan)
Inventor
  • Hayashi, Tatsuya
  • Hira, Akinobu

Abstract

A polyamide-based resin expanded bead comprising a foam layer formed by expanding a polyamide-based resin, wherein on a first DSC curve and a second DSC curve, the first DSC curve has a melting peak (intrinsic peak) having a peak top temperature on a low temperature side equal to or lower than a peak top temperature of a melting peak of the second DSC curve and a melting peak (high temperature peak) having a peak top temperature on a high temperature side exceeding the peak top temperature of the second DSC curve, and, the peak top temperature of the melting peak of the second DSC curve is 180° C. or higher and 280° C. or lower, and the polyamide-based resin expanded bead has an apparent density of 10 to 300 kg/m3 and a closed cell ratio of 85% or more.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

94.

METHOD FOR PRODUCING ORGANIC COMPOUND AND MECHANOCHEMICAL REACTOR

      
Application Number JP2024021956
Publication Number 2025/009373
Status In Force
Filing Date 2024-06-18
Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Ishimura,toshiki
  • Nawate,yuuya
  • Kato,takumi
  • Sugawara,tetsunori

Abstract

Provided are: a method for producing an organic compound, the method simply and economically rationally enabling a reaction by a mechanochemical method; and a mechanochemical reactor. Provided is a method for producing an organic compound, the method comprising a step for carrying out a reaction in a reactor, wherein the reactor comprises a non-metal reaction container and a plurality of stirring media having been charged into the reaction container, at least the surfaces of the stirring media being non-metal, and the reaction is carried out by a mechanochemical method by means of relative movement between the reaction container and the stirring media. In this method, the acceleration of the movement of the stirring media caused by the movement of the reaction container is 9.83 m/s2 or less.

IPC Classes  ?

  • C07C 1/32 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon starting from compounds containing hetero atoms other than, or in addition to, oxygen or halogen
  • C07B 61/00 - Other general methods
  • C07C 5/44 - Preparation of hydrocarbons from hydrocarbons containing the same number of carbon atoms by dehydrogenation with a hydrogen acceptor with a halogen or a halogen-containing compound as an acceptor
  • C07C 13/62 - Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with more than three condensed rings
  • C07C 15/24 - Polycyclic condensed hydrocarbons containing two rings
  • C07C 29/40 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring increasing the number of carbon atoms by reactions with formation of hydroxy groups, which may occur via intermediates being derivatives of hydroxy groups, e.g. O-metal by reaction with aldehydes or ketones with compounds containing carbon-to-metal bonds
  • C07C 29/143 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of an oxygen-containing functional group of C=O containing groups, e.g. —COOH of ketones
  • C07C 33/24 - Monohydroxylic alcohols containing only six-membered aromatic rings as cyclic part polycyclic without condensed ring systems
  • C07C 33/26 - Polyhydroxylic alcohols containing only six-membered aromatic rings as cyclic part
  • C07C 45/46 - Friedel-Crafts reactions
  • C07C 49/784 - Ketones containing a keto group bound to a six-membered aromatic ring polycyclic with all keto groups bound to a non-condensed ring
  • C07C 231/02 - Preparation of carboxylic acid amides from carboxylic acids or from esters, anhydrides, or halides thereof by reaction with ammonia or amines
  • C07C 233/15 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by halogen atoms or by nitro or nitroso groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring

95.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER AND METHOD FOR PRODUCING SAME, AND COMPOUND

      
Application Number JP2024022828
Publication Number 2025/009429
Status In Force
Filing Date 2024-06-24
Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Shiratani, Motohiro
  • Motoyama, Kazuki
  • Rozhanskii, Igor
  • Nishikori, Katsuaki
  • Miyata, Hiromu
  • Abe, Shin-Ya

Abstract

This radiation-sensitive composition contains a polymer represented by formula (1). In formula (1), A1and A2each independently represent a group represented by formula (a-1), formula (a-2), formula (a-3), or formula (a-4). B1represents a divalent group having a partial structure by which the bond between A1and A2mediated by B1can be cut by the action of an acid. P1and P2 are each independently a molecule chain.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 2/44 - Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
  • C08F 20/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
  • C08F 212/06 - Hydrocarbons
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/20 - ExposureApparatus therefor

96.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTO-DEGRADABLE BASE

      
Application Number 18882982
Status Pending
Filing Date 2024-09-12
First Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Furuichi, Kota
  • Nakamura, Ryosuke
  • Furukawa, Tsuyoshi

Abstract

A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound (Q) represented by formula (1). In the formula (1), L1 represents an ester group, —CO—NR3—, a (thio)ether group, or a sulfonyl group. R4 represents a hydrogen atom, a substituted or unsubstituted C1 to C20 monovalent hydrocarbon group, a halogen atom, a hydroxy group, or a nitro group. R5 represents a C1 to C20 monovalent hydrocarbon group, a C1 to C20 monovalent halogenated hydrocarbon group, or a halogen atom, and optionally two R5s taken together represent an alicyclic structure together with the carbon atom(s) between the two R5s. L2 represents a single bond or a divalent linking group. A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound (Q) represented by formula (1). In the formula (1), L1 represents an ester group, —CO—NR3—, a (thio)ether group, or a sulfonyl group. R4 represents a hydrogen atom, a substituted or unsubstituted C1 to C20 monovalent hydrocarbon group, a halogen atom, a hydroxy group, or a nitro group. R5 represents a C1 to C20 monovalent hydrocarbon group, a C1 to C20 monovalent halogenated hydrocarbon group, or a halogen atom, and optionally two R5s taken together represent an alicyclic structure together with the carbon atom(s) between the two R5s. L2 represents a single bond or a divalent linking group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 69/75 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of acids with a six-membered ring
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 309/27 - Sulfonic acids having sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings of a carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07D 207/416 - 2,5-Pyrrolidine-diones with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to other ring carbon atoms
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 307/94 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom spiro-condensed with carbocyclic rings or ring systems, e.g. griseofulvins
  • C07D 311/00 - Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
  • C07D 313/06 - Seven-membered rings condensed with carbocyclic rings or ring systems
  • C07D 321/06 - 1, 3-DioxepinesHydrogenated 1,3-dioxepines
  • C07D 327/04 - Five-membered rings
  • C07D 327/06 - Six-membered rings
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/32 - Liquid compositions therefor, e.g. developers

97.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND REVERSAL PATTERN FORMING MATERIAL

      
Application Number JP2024021987
Publication Number 2025/009380
Status In Force
Filing Date 2024-06-18
Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Serizawa,ryuichi
  • Kasai,tatsuya
  • Ozaki,yuki

Abstract

Provided are: a semiconductor substrate manufacturing method with which it is possible to improve the etching resistance of a reversal pattern of a metal-containing resist pattern and the rectangularity of the reversal pattern; and a reversal pattern forming material. This semiconductor substrate manufacturing method comprises: a step for forming a metal-containing resist film directly or indirectly on a substrate with use of a metal-containing resist forming material; a step for subjecting the metal-containing resist film to light exposure by means of extreme ultraviolet light; a step for developing the light-exposed metal-containing resist film; a step for forming, on the metal-containing resist pattern that is formed in the development step, a film for reversal pattern formation with use of a reversal pattern forming material; and a step for removing the metal-containing resist pattern so as to form a reversal pattern that is formed of the film for reversal pattern formation. The metal-containing resist forming material contains tin atoms, and the reversal pattern forming material contains silicon atoms.

IPC Classes  ?

98.

METHOD FOR MANUFACTURING MAGNETIC STORAGE ELEMENT

      
Application Number JP2024023703
Publication Number 2025/009492
Status In Force
Filing Date 2024-07-01
Publication Date 2025-01-09
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Inukai, Kouji
  • Toga, Yuuta
  • Ichinohe, Daigo
  • Shimizu, Makoto
  • Nakatsuji, Satoru
  • Idzuchi, Hiroshi

Abstract

The purpose of the present invention is to manufacture a fine-patterned magnetic storage element with high precision. A magnetic storage element (1) includes: a magnetic tunnel junction layer (30) having a structure in which an insulating layer (32) is sandwiched between two magnetic layers (31) and (33), and in which the resistance state changes in accordance with the magnetization direction of one of the magnetic layer (31) and the magnetic layer (33); and a metal layer (40) provided on the magnetic tunnel junction layer (30). A method for manufacturing the magnetic storage element (1) includes a step for forming a resist film (50) having an opening (50a) on a substrate (10) on which an electrode layer (20) is formed, a step for forming a magnetic tunnel junction layer (30) on the electrode layer (20) exposed in the opening (50a), a step for forming a metal layer (40) on the magnetic tunnel junction layer (30), and a step for removing the resist film (50).

IPC Classes  ?

  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
  • H10N 50/10 - Magnetoresistive devices

99.

Radiation-Sensitive Composition, Pattern Formation Method, and Photo-Degradable Base

      
Application Number 18829747
Status Pending
Filing Date 2024-09-10
First Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto, Ryuichi
  • Miyake, Masayuki
  • Mita, Michihiro
  • Abe, Yudai
  • Kiriyama, Kazuya

Abstract

A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound represented by formula (1). In the formula (1), A1 represents a (m+n+2)-valent aromatic ring group. Both —OH and —COO− are bound to a common benzene ring in A1. Atom to which —OH is bound is located next to an atom to which —COO31 is bound. R1 represents a monovalent group comprising a cyclic (thio)acetal structure. m is an integer of ≥0. n is an integer of ≥0. M+ represents a monovalent organic cation. A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound represented by formula (1). In the formula (1), A1 represents a (m+n+2)-valent aromatic ring group. Both —OH and —COO− are bound to a common benzene ring in A1. Atom to which —OH is bound is located next to an atom to which —COO31 is bound. R1 represents a monovalent group comprising a cyclic (thio)acetal structure. m is an integer of ≥0. n is an integer of ≥0. M+ represents a monovalent organic cation.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/22 - Exposing sequentially with the same light pattern different positions of the same surface

100.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024018785
Publication Number 2025/004621
Status In Force
Filing Date 2024-05-22
Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Kiriyama,kazuya
  • Omiya,takuya

Abstract

Provided are a radiation-sensitive composition and a pattern formation method capable of exhibiting sensitivity, CDU performance, and LWR performance at a sufficient level when a resist pattern is formed using next-generation technology. In the present invention, a radiation-sensitive composition contains: a polymer including structural units having an acid-dissociable group; a radiation-sensitive acid generator containing a first organic acid anion and a first onium cation; an acid diffusion control agent that contains a second organic acid anion and a second onium cation, and generates an acid having a higher pKa than an acid generated from the radiation-sensitive acid generator under exposure to radiation; and a solvent. The first organic acid anion contains an acid anion moiety and an aromatic ring having at least both a first substituent and a second substituent. The first substituent and the second substituent are each independently a hydroxy group, a sulfo group, or a sulfanyl group. At least one selected from the group consisting of the polymer, the radiation-sensitive acid generator, and the acid diffusion control agent contains an iodo group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
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