JSR Corporation

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        Brevet 2 454
        Marque 120
Juridiction
        International 1 776
        États-Unis 755
        Europe 29
        Canada 14
Propriétaire / Filiale
[Owner] JSR Corporation 2 473
Techno Polymer Co., Ltd. 75
JSR Micro Inc. 17
Japan Coloring Co., Ltd. 16
Japan Fine Coatings Co. Ltd. 11
Date
Nouveautés (dernières 4 semaines) 17
2025 janvier (MACJ) 5
2024 décembre 12
2024 novembre 13
2024 octobre 12
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Classe IPC
G03F 7/004 - Matériaux photosensibles 523
G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons 485
G03F 7/20 - Exposition; Appareillages à cet effet 362
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou 305
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage 234
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Classe NICE
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture 98
17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler 28
05 - Produits pharmaceutiques, vétérinaires et hygièniques 14
09 - Appareils et instruments scientifiques et électriques 13
42 - Services scientifiques, technologiques et industriels, recherche et conception 12
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Statut
En Instance 178
Enregistré / En vigueur 2 396
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1.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2024018785
Numéro de publication 2025/004621
Statut Délivré - en vigueur
Date de dépôt 2024-05-22
Date de publication 2025-01-02
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Kiriyama,kazuya
  • Omiya,takuya

Abrégé

Provided are a radiation-sensitive composition and a pattern formation method capable of exhibiting sensitivity, CDU performance, and LWR performance at a sufficient level when a resist pattern is formed using next-generation technology. In the present invention, a radiation-sensitive composition contains: a polymer including structural units having an acid-dissociable group; a radiation-sensitive acid generator containing a first organic acid anion and a first onium cation; an acid diffusion control agent that contains a second organic acid anion and a second onium cation, and generates an acid having a higher pKa than an acid generated from the radiation-sensitive acid generator under exposure to radiation; and a solvent. The first organic acid anion contains an acid anion moiety and an aromatic ring having at least both a first substituent and a second substituent. The first substituent and the second substituent are each independently a hydroxy group, a sulfo group, or a sulfanyl group. At least one selected from the group consisting of the polymer, the radiation-sensitive acid generator, and the acid diffusion control agent contains an iodo group.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

2.

COMPOSITION FOR INSULATING-FILM FORMATION, INSULATING FILM, ELECTRONIC DEVICE, MULTILAYER OBJECT, AND METHOD FOR PRODUCING MULTILAYER OBJECT

      
Numéro d'application JP2024023167
Numéro de publication 2025/005134
Statut Délivré - en vigueur
Date de dépôt 2024-06-26
Date de publication 2025-01-02
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nosaka Naoya
  • Tabata Yuuki
  • Takanashi Kazunori
  • Hamaguchi Hitoshi

Abrégé

A composition for insulating-film formation which comprises: a polyfunctional acrylate having 2-6 acrylic groups in the molecule; a free-radical photopolymerization initiator; and a solvent having a boiling point at atmospheric pressure of 100-250°C and a surface tension of 20-34 mN/m.

Classes IPC  ?

  • C09D 4/02 - Monomères acryliques
  • C08F 20/20 - Esters des alcools polyhydriques ou des phénols polyhydriques
  • C09D 5/25 - Peintures ou laques électriquement isolantes
  • C09D 7/20 - Diluants ou solvants
  • C09D 7/63 - Adjuvants non macromoléculaires organiques

3.

PHOTOSENSITIVE COMPOSITION, CURED PRODUCT AND METHOD FOR PRODUCING SAME, DISPLAY ELEMENT, AND IMAGING ELEMENT

      
Numéro d'application JP2024023515
Numéro de publication 2025/005248
Statut Délivré - en vigueur
Date de dépôt 2024-06-28
Date de publication 2025-01-02
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Chung,kang-Go
  • Yoda,kyosuke
  • Kodama,seiichiro

Abrégé

The purpose of the present invention is to provide: a photosensitive composition that undergoes little increase in viscosity even after a given period of time has elapsed, has exceptional storage stability, does not solidify when a coating slit nozzle or the like is used, and can be applied even after a given period of time has elapsed (has excellent coating properties over time); a cured film formed from the photosensitive composition; a method for producing the cured film; a display element provided with the cured film; and an imaging element provided with the cured film. The present invention relates to a photosensitive composition for forming an optical member, the photosensitive composition containing particles (A), a radically polymerizable compound (B), a photoradical generator (C), and a dehydrating agent (D), the dehydrating agent (D) containing an orthoester compound.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/40 - Traitement après le dépouillement selon l'image, p.ex. émaillage
  • H01L 27/146 - Structures de capteurs d'images

4.

OPTICAL MEMBER, SENSOR MODULE, AND METHOD FOR MANUFACTURING OPTICAL MEMBER

      
Numéro d'application JP2024021433
Numéro de publication 2025/004817
Statut Délivré - en vigueur
Date de dépôt 2024-06-13
Date de publication 2025-01-02
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Tanaka Yukie
  • Kawabe Yasunori
  • Kishida Hiroyuki

Abrégé

[Problem] To provide: an optical member that accurately eliminates noise light impinging from the perpendicular direction, is capable of improving the detection intensity ratio T2/T1 between the transmissivity T1 of perpendicular light that is noise light and the transmissivity T2 of obliquely impinging signal light designed in consideration of Snell's law, and is adaptable to flexible devices; a sensor module using the optical member; and a manufacturing method for the optical member. [Solution] An optical member containing a compound A having an absorption maximum wavelength (λmax) at a wavelength of 581-1200 nm, and provided with a first optical portion having an average transmissivity of 20% or less at the absorption maximum wavelength (λmax) ± 20 nm, and a second optical portion having an average transmissivity of 70% or more at the absorption maximum wavelength (λmax) ± 20 nm, wherein the second optical portion has an inclination of 0.1° to 70° or -0.1° to -70°, measured from the normal to the surface of the optical member, with respect to the thickness direction of the optical member.

Classes IPC  ?

  • G02B 5/22 - Filtres absorbants
  • G01J 1/02 - Photométrie, p.ex. posemètres photographiques - Parties constitutives
  • G01J 1/04 - Pièces optiques ou mécaniques

5.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATION AGENT

      
Numéro d'application JP2024022037
Numéro de publication 2025/004904
Statut Délivré - en vigueur
Date de dépôt 2024-06-18
Date de publication 2025-01-02
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori,katsuaki
  • Taniguchi,takuhiro
  • Kiriyama,kazuya

Abrégé

The present invention provides a radiation-sensitive composition and a pattern formation method with which it is possible to form a resist film in which development defects can be minizied and sensitivity and CDU can be exhibited at a sufficient level when a next-generation technology is applied. The present invention also provides a radiation-sensitive acid generation agent that can be applied to the radiation-sensitive composition. The radiation-sensitive composition contains a polymer (A) containing structural units (I) having an acid dissociable group, and a solvent (C), the radiation-sensitive composition meeting criteria (i) and/or (ii) below. (i) Contains a radiation-sensitive acid generator (B) containing a first organic acid anion and a first onium cation, the first onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the first organic acid anion being a sulfonic acid anion that contains an iodine atom. (ii) The polymer (A) is a radiation-sensitive acid-generating polymer (A1) containing structural units (IV) having a second organic acid anion and a second onium cation, the second onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the second organic acid anion being a sulfonic acid anion that contains an iodine atom.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 220/10 - Esters
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

6.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Numéro d'application JP2024019163
Numéro de publication 2024/262245
Statut Délivré - en vigueur
Date de dépôt 2024-05-24
Date de publication 2024-12-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Egawa,fuyuki
  • Nemoto,ryuichi
  • Oshiro,taku
  • Miyao,kensuke
  • Inami,hajime

Abrégé

Provided are: a radiation-sensitive composition that makes it possible to achieve substantial sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity when a resist pattern is formed; a pattern formation method; and an onium salt compound. A radiation-sensitive composition according to the present invention includes an onium salt compound represented by formula (1), a polymer that includes a structural unit that has an acid-dissociable group, and a solvent. (In formula (1), A is a C1–40 monovalent organic group, R1and R2are each independently a hydrogen atom, a C1–20 monovalent fluorine-free organic group, a cyano group, a nitro group, a hydroxyl group, or an amino group, each of the R1s and R2s being the same or different when there are a plurality of R1s and R211 is an integer from 1 to 8, inclusive, and Z+ is a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 317/10 - Sulfones; Sulfoxydes ayant des groupes sulfone ou sulfoxyde liés à des atomes de carbone acycliques d'un squelette carboné non saturé contenant des cycles
  • C07C 317/12 - Sulfones; Sulfoxydes ayant des groupes sulfone ou sulfoxyde liés à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons
  • C07C 317/14 - Sulfones; Sulfoxydes ayant des groupes sulfone ou sulfoxyde liés à des atomes de carbone de cycles aromatiques à six chaînons
  • C07C 317/18 - Sulfones; Sulfoxydes ayant des groupes sulfone ou sulfoxyde et des atomes d'oxygène, liés par des liaisons simples, liés au même squelette carboné avec des groupes sulfone ou sulfoxyde liés à des atomes de carbone acycliques du squelette carboné
  • C07C 317/44 - Sulfones; Sulfoxydes ayant des groupes sulfone ou sulfoxyde et des groupes carboxyle liés au même squelette carboné
  • C07C 381/12 - Composés sulfonium
  • C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
  • C07D 307/33 - Atomes d'oxygène en position 2, l'atome d'oxygène étant sous la forme céto ou énol non substituée
  • C07D 317/08 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3
  • C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
  • C07D 321/10 - Cycles à sept chaînons condensés avec des carbocycles ou avec des systèmes carbocycliques
  • C07D 327/06 - Cycles à six chaînons
  • C07D 333/16 - Radicaux substitués par des hétéro-atomes, autres que les halogènes, liés par des liaisons simples par des atomes d'oxygène
  • C07D 493/18 - Systèmes pontés
  • C08F 2/06 - Solvant organique
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

7.

POLYPROPYLENE RESIN FOAMED PARTICLES AND METHOD FOR MANUFACTURING SAME

      
Numéro d'application JP2024012704
Numéro de publication 2024/257436
Statut Délivré - en vigueur
Date de dépôt 2024-03-28
Date de publication 2024-12-19
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Sakamura Takumi
  • Ohta Hajime

Abrégé

SS of the polyolefin resin composing the coating layer (3) is higher than 15 g/10 min.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles

8.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2024016360
Numéro de publication 2024/257496
Statut Délivré - en vigueur
Date de dépôt 2024-04-26
Date de publication 2024-12-19
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori,katsuaki
  • Shiratani,motohiro
  • Omiya,takuya

Abrégé

Provided are a radiation-sensitive composition and a pattern formation method wherein sensitivity, CDU performance, and development defect suppression can be demonstrated at a sufficient level when next-generation technology is applied. [Solution] This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); a high-fluorine-content polymer that has a higher mass content of fluorine atoms than the aforementioned polymer; one or more types of onium salts including an organic acid anion and an onium cation; and a solvent, wherein at least some of the organic acid anions in the onium salt or salts include an iodine-substituted aromatic ring structure. (In formula (1), Rαis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; Ar is an aromatic ring with 5-20 members and a valence of (p+q+r+1); R11is a hydrogen atom or a C1-20 monovalent organic group; in cases in which a plurality of R11moieties are present, the plurality of R11moieties are the same as or different from each other; R12is a cyano group, a nitro group, an alkyl group, a fluorinated alkyl group, or an acyl group; in cases in which a plurality of R12moieties are present, the plurality of R12 moieties are the same as or different from each other; p and q are each independently an integer from 1 to 6; and r is an integer from 0 to 3.)

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

9.

THERMOSETTING RESIN COMPOSITION FOR FORMING WIRING BOARD, CURED PRODUCT, PREPREG, AND INTERLAYER INSULATING FILM

      
Numéro d'application JP2024021280
Numéro de publication 2024/257781
Statut Délivré - en vigueur
Date de dépôt 2024-06-12
Date de publication 2024-12-19
Propriétaire
  • JSR CORPORATION (Japon)
  • DENKA COMPANY LIMITED (Japon)
Inventeur(s)
  • Satonaka Eri
  • Iizuka Shunsuke
  • Ishigaki Yuhei
  • Nakano Tatsuya
  • Kanto Ryosuke

Abrégé

Provided is a thermosetting resin composition for forming a wiring board, the thermosetting resin containing: a polymer (A) having a structural unit represented by formula (1-1); and a copolymer (B) having a structural unit derived from ethylene or α-olefin, a structural unit derived from an aromatic vinyl compound, and a structural unit derived from an aromatic polyfunctional vinyl compound. Also provided are a cured product, a prepreg, and an interlayer insulating film. The details of formula (1-1) are shown in the specification.

Classes IPC  ?

  • H05K 1/03 - Emploi de matériaux pour réaliser le substrat
  • C08F 2/44 - Polymérisation en présence d'additifs, p.ex. plastifiants, matières colorantes, charges
  • C08G 65/40 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols à partir des phénols et d'autres composés
  • C08K 3/013 - Charges, pigments ou agents de renforcement
  • C08L 23/08 - Copolymères de l'éthylène
  • C08L 25/08 - Copolymères du styrène
  • C08L 71/10 - Polyéthers dérivés de composés hydroxylés ou de leurs dérivés métalliques de phénols

10.

POLYPROPYLENE RESIN FOAM PARTICLES

      
Numéro d'application 18700608
Statut En instance
Date de dépôt 2022-10-07
Date de la première publication 2024-12-12
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Saito, Yukiya
  • Ohta, Hajime

Abrégé

A polypropylene-based resin expanded bead, in which the melting point Tma of a polypropylene-based resin (a) constituting a core layer in an expanded state is 135° C. or higher and 155° C. or lower; a polypropylene-based resin (b) constituting a covering layer contains a propylene-based copolymer containing a propylene component, an ethylene component, and a butene component, as a main component; the difference [Tma−Tmb] between the melting point Tma of the polypropylene-based resin (a) and the melting point Tmb of the polypropylene-based resin (b) is 1° C. or more and 30° C. or less; the difference [Tmb−Tcb] between the melting point Tmb of the polypropylene-based resin (b) and the crystallization temperature Tcb of the polypropylene-based resin (b) is 40° C. or less; and the covering layer contains a higher fatty acid amide.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • C08J 9/00 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement
  • C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage

11.

TWO-LAYER FILM OF MAGNETIC BODY AND INSULATOR, TUNNEL MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY

      
Numéro d'application JP2024020707
Numéro de publication 2024/253160
Statut Délivré - en vigueur
Date de dépôt 2024-06-06
Date de publication 2024-12-12
Propriétaire
  • JSR CORPORATION (Japon)
  • THE UNIVERSITY OF TOKYO (Japon)
  • TOHOKU UNIVERSITY (Japon)
Inventeur(s)
  • Toga,yuuta
  • Inukai,kouji
  • Koretsune,takashi
  • Nomoto,takuya
  • Arita,ryotaro
  • Tanaka,katsuhiro
  • Minami,susumu
  • Nakatsuji,satoru

Abrégé

A two-layer film of a magnetic body and an insulator according to the present invention comprises an antiferromagnetic layer that has a hexagonal crystal structure, with at least one surface thereof being the (10-10) plane of the antiferromagnetic body, and an insulator layer that is composed of two, three, or four kinds of atoms layered on the (10-10) plane. A two-layer film of a magnetic body and an insulator according to the present invention comprises an antiferromagnetic layer that has a hexagonal crystal structure, with at least one surface thereof being the (0001) plane of the antiferromagnetic body, and an insulator layer that is composed of two, three, or four kinds of atoms layered on the (0001) plane. A tunnel magnetoresistive element according to the present invention comprises a second antiferromagnetic film layer that is layered on the insulator of the two-layer film. A magnetic memory according to the present invention comprises a plurality of the tunnel magnetoresistive elements.

Classes IPC  ?

  • H10N 50/10 - Dispositifs magnéto-résistifs
  • H01L 29/82 - Types de dispositifs semi-conducteurs commandés par la variation du champ magnétique appliqué au dispositif
  • H10B 61/00 - Dispositifs de mémoire magnétique, p.ex. dispositifs RAM magnéto-résistifs [MRAM]

12.

PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATES

      
Numéro d'application 18699377
Statut En instance
Date de dépôt 2022-09-21
Date de la première publication 2024-12-12
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

A production method for a semiconductor substrate includes: performing a vapor deposition of a metal compound or metal directly or indirectly onto a substrate to form a metal-containing resist film; and exposing the metal-containing resist film to light. The metal compound or metal includes an Au atom, a Cr atom, an Ag atom, an In atom, or a combination thereof. The method preferably further includes developing the metal-containing resist film after exposing. The vapor deposition is preferably performed by PVD or CVD. The metal compound preferably includes a metal complex, a metal halide, or an organometal.

Classes IPC  ?

  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet
  • C23C 16/18 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le dépôt d'un matériau métallique à partir de composés organométalliques
  • C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p.ex. borures, carbures, nitrures
  • C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
  • C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques
  • C23C 16/56 - Post-traitement
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques

13.

METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN EXPANDED BEADS AND MOLDED ARTICLE OF POLYPROPYLENE-BASED RESIN EXPANDED BEADS

      
Numéro d'application 18699674
Statut En instance
Date de dépôt 2022-09-28
Date de la première publication 2024-12-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Sakamura, Takumi
  • Ohta, Hajime

Abrégé

A method for producing polypropylene-based resin expanded beads each having a through-hole by performing a first expanding step and a second expanding step is provided. In the first expanding step, tubular resin particles containing carbon black and having through-holes are dispersed in a dispersion medium and released to an environment under a low pressure, thereby obtaining first-step expanded beads having a bulk ratio of M1 times. In the second expanding step, the first-step expanded beads are further expanded to obtain polypropylene-based resin expanded beads having a bulk ratio of M2 times. The bulk ratio M1 is 5 times or more and 25 times or less. A ratio M2/M1 of the bulk ratio M2 to the bulk ratio M1 is 1.2 or more and 3.0 or less.

Classes IPC  ?

  • C08J 9/232 - Façonnage d'articles en mousse par frittage de particules expansibles
  • C08J 9/00 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement
  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • C08K 3/04 - Carbone

14.

POLYOLEFIN-BASED RESIN FOAM PARTICLES AND MOLDED BODY OF POLYOLEFIN-BASED RESIN FOAM PARTICLES

      
Numéro d'application JP2024018389
Numéro de publication 2024/247768
Statut Délivré - en vigueur
Date de dépôt 2024-05-17
Date de publication 2024-12-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Ito Yosuke
  • Chiba Takuya

Abrégé

The present invention provides: polyolefin-based resin foam particles which exhibit good in-mold moldability and are capable of providing a molded body of foam particles, the molded body exhibiting excellent flame retardancy; and a molded body of polyolefin-based resin foam particles, the molded body having excellent flame retardancy. The polyolefin-based resin foam particles have a bulk density of 10 kg/m3to 100 kg/m3inclusive, contain a NOR-type hindered amine-based compound that is represented by a specific structural formula, and are configured so that the content of the NOR-type hindered amine-based compound in the polyolefin-based resin foam particles is 0.01% by mass to 3% by mass inclusive. The molded body of polyolefin-based resin foam particles has a density of 10 kg/m3to 100 kg/m3 inclusive, and is configured so that the content of the NOR-type hindered amine-based compound that is represented by a specific structural formula in the molded body of polyolefin-based resin foam particles is 0.01% by mass to 3% by mass inclusive.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • C08J 9/04 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable

15.

POLYPROPYLENE-BASED RESIN FOAM PARTICLE MOLDED BODY AND POLYPROPYLENE-BASED RESIN FOAM PARTICLE

      
Numéro d'application JP2024018917
Numéro de publication 2024/247858
Statut Délivré - en vigueur
Date de dépôt 2024-05-22
Date de publication 2024-12-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Chiba Takuya
  • Masumoto Hisashi
  • Shimada Tomohito

Abrégé

0120012000≤25(%)

Classes IPC  ?

16.

POLYOLEFIN RESIN FOAMED PARTICLES AND POLYOLEFIN RESIN FOAMED PARTICLE MOLDED ARTICLE

      
Numéro d'application JP2024018918
Numéro de publication 2024/247859
Statut Délivré - en vigueur
Date de dépôt 2024-05-22
Date de publication 2024-12-05
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Hira Akinobu
  • Saito Yukiya

Abrégé

The purpose of the present invention is to provide polyolefin resin foamed particles with through-holes, having small variation in expansion ratio, and to provide a foamed particle molded article having low variation in density of the molded article. Polyolefin resin foamed particles according to the present invention have through-holes, contain magnesium silicate present on the surface of the foamed particles, and have an abundance ratio of magnesium silicate on the surface of the foamed particles of 0.1% by mass to 1% by mass inclusive.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • C08J 9/224 - Traitement de surface

17.

METHOD FOR FILLING COLUMN WITH CHROMATOGRAPHY CARRIER, METHOD FOR STORING SLURRY, AND SLURRY

      
Numéro d'application 18697074
Statut En instance
Date de dépôt 2022-09-09
Date de la première publication 2024-12-05
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Akiyama, Minato
  • Kobayashi, Kunihiko
  • Inoue, Yukiya
  • Kikuchi, Masahiro

Abrégé

Provided is a method for filling a column with a chromatography carrier, including substituting a slurry with an aqueous solvent not containing a buffer, in which the slurry contains a target substance-capturing chromatography carrier, a buffer having an acid dissociation constant (pKa) within a range of ±1.0 of the isoelectric point of the carrier, and an aqueous solvent and has a pH of a liquid phase adjusted within a range of ±2.0 of the isoelectric point of the carrier, and filling a column with the slurry subjected to solvent substitution. The method may be advantageous for suppressing a decrease in liquid permeability and pressure resistance characteristics during liquid passage of a chromatography carrier when a solvent is substituted with an aqueous solvent not containing a buffer.

Classes IPC  ?

  • G01N 30/52 - Paramètres physiques
  • G01N 33/68 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique faisant intervenir des protéines, peptides ou amino-acides

18.

LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR

      
Numéro d'application 18685497
Statut En instance
Date de dépôt 2022-08-22
Date de la première publication 2024-11-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Kuroda, Yoshihiko
  • Miyachi, Koichi

Abrégé

A first and/or second alignment film is a photo-alignment film on which alignment division is performed. Each pixel has multiple alignment regions having different alignment directions of liquid crystal molecules of a liquid crystal layer by the alignment division. The number of times of exposure in each alignment region for the alignment division is two or more and the same number among the regions; in each time of exposure for the alignment division, exposure is performed on two or more alignment regions along an arrangement direction, the previous numbers of times of exposure in alignment regions to be exposed in each times of exposure are the same among the regions; and the angle formed by the alignment direction of the liquid crystal molecules of the liquid crystal layer in each region of the alignment regions and a direction where the polarizing axis of a polarizing plate extends is 45°.

Classes IPC  ?

  • G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p.ex. par des couches d'alignement
  • G02F 1/1335 - Association structurelle de cellules avec des dispositifs optiques, p.ex. des polariseurs ou des réflecteurs
  • G02F 1/137 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides caractérisés par l'effet électro-optique ou magnéto-optique, p.ex. transition de phase induite par un champ, effet d'orientation, interaction entre milieu récepteur et matière additive ou diffusion dynamique

19.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Numéro d'application JP2024015136
Numéro de publication 2024/241766
Statut Délivré - en vigueur
Date de dépôt 2024-04-16
Date de publication 2024-11-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Abe,yudai
  • Inami,hajime
  • Nemoto,ryuichi
  • Egawa,fuyuki
  • Miyake,masayuki

Abrégé

Provided are: a radiation-sensitive composition which is capable of exhibiting sufficient levels of sensitivity, LWR performance, CDU performance and MEEF performance during formation of a resist pattern, and has satisfactory storage stability; a pattern formation method; and an onium salt compound. The radiation-sensitive composition comprises: an onium salt compound represented by formula (1); a polymer containing a structural unit having an acid-dissociable group; and a solvent. (In formula (1), A represents a monovalent organic group having 1 to 40 carbon atoms. R1and R2each independently represent a hydrogen atom, a cyano group, a nitro group, a hydroxy group, an alkoxy group, an alkylthio group, an amino group, a mercapto group, a monovalent hydrocarbon group having 1 to 20 carbon atoms, or a monovalent hydrocarbon group having 1 to 20 carbon atoms and substituted by at least one of a cyano group, a nitro group, a hydroxy group, an alkoxy group, an alkylthio group, an amino group, a mercapto group, a chlorine atom, a bromine atom and an iodine atom. When a plurality of R1's and a plurality of R2's are present, the plurality of R1's and the plurality of R2's are respectively identical or different from each other. At least one of R1and R211 represents an integer of 1 to 8. L represents *-COO-, *-OCO-, *-CO- or *-OCOO-, and *11 is 1, L is *-COO-, *-CO- or *-OCOO-. Z+ represents a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

20.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMING METHOD, AND ONIUM SALT COMPOUND

      
Numéro d'application JP2024016060
Numéro de publication 2024/241820
Statut Délivré - en vigueur
Date de dépôt 2024-04-24
Date de publication 2024-11-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Inami,hajime
  • Egawa,fuyuki
  • Nemoto,ryuichi
  • Miyake,masayuki
  • Miyao,kensuke

Abrégé

Provided are: a radiation-sensitive composition capable of exhibiting sensitivity, LWR performance and CDU performance each at a sufficient level when forming a resist pattern, and having good storage stability; a pattern forming method; and an onium salt compound. This radiation-sensitive composition contains: an onium salt compound represented by formula (1); a polymer containing a structural unit (I) having an acid-dissociable group; and a solvent. (In formula (1), W is a cyclic structure having 3-40 ring members and composed with two carbon atoms. The formula between carbon-carbon atoms represents a single or double bond. A is a group represented by formula (A-1), a group represented by formula (A-2), a group represented by formula (A-3), a group represented by formula (A-4), a group represented by formula (A-5), a group represented by formula (A-6), or a group represented by formula (A-7). (In formulae (A-3) and (A-4), RA1and RA2are each independently a monovalent hydrocarbon group having 1-20 carbon atoms. * is a bond to a carbon atom.) R1is a monovalent organic group having 1-20 carbon atoms, a cyano group, a nitro group, a carboxy group, a hydroxy group, an amino group, a halogen atom or a thiol group. In a case where multiple R1moieties are present, the multiple R111 is an integer between 0 and 4. Z+ is a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

21.

RADIATION-SENSITIVE COMPOSITION FOR FORMING GATE INSULATING FILM, PATTERN, METHOD FOR PRODUCING PATTERN, CURED FILM FOR GATE INSULATING FILM, SEMICONDUCTOR ELEMENT, ORGANIC ELECTROCHEMICAL TRANSISTOR, ORGANIC EL DISPLAY DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, MICRO-LED DISPLAY DEVICE, QUANTUM DOT LIGHT-EMITTING DISPLAY DEVICE, WEARABLE DEVICE, ELECTRONIC SKIN DEVICE, BIOLOGICAL SENSOR, AND NEUROMORPHIC DEVICE

      
Numéro d'application JP2024019011
Numéro de publication 2024/242171
Statut Délivré - en vigueur
Date de dépôt 2024-05-23
Date de publication 2024-11-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Mimura,tokio

Abrégé

The purpose of the present invention is to provide: a radiation-sensitive composition capable of forming a gate insulation film pattern (cured film) that is stretchable and is capable of exhibiting pattern formability, electric capacity, and chemical resistance at sufficient levels; a pattern (cured film) formed from the radiation-sensitive composition; a method for producing the pattern; a cured film for a gate insulation film; a semiconductor element provided with the cured film; an organic electrochemical transistor; an organic EL display device; a liquid crystal display device; a micro LED display device; a quantum dot light-emitting display device; a wearable device; an electronic skin device; a biological sensor; and a neuromorphic device. The present invention relates to a radiation-sensitive composition for forming a gate insulation film (excluding any composition containing cresol novolac and a quinone diazide compound), the radiation-sensitive composition containing: at least one polymer (A) selected from the group consisting of polymers (A1) that contain structural units (I) having an acid group, siloxane polymers (A2), and polyamic acids or polyamic acid esters (A3); a radiation-sensitive compound (B); and an ionic liquid (C).

Classes IPC  ?

  • G03F 7/023 - Quinonediazides macromoléculaires; Additifs macromoléculaires, p.ex. liants
  • G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
  • G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
  • G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p.ex. à diodes
  • G09F 9/35 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à cristaux liquides
  • H01L 21/312 - Couches organiques, p.ex. couche photosensible
  • H01L 29/786 - Transistors à couche mince
  • H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
  • H10K 59/12 - Affichages à OLED à matrice active [AMOLED]
  • H10K 59/125 - Affichages à OLED à matrice active [AMOLED] comportant des TFT organiques [OTFT]
  • H10K 71/20 - Modification de la forme de la couche active dans les dispositifs, p. ex. mise en forme
  • H10K 85/10 - Polymères ou oligomères organiques
  • H10K 85/40 - Composés organosiliciés, p. ex. pentacène TIPS

22.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application 18795534
Statut En instance
Date de dépôt 2024-08-06
Date de la première publication 2024-11-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Egawa, Fuyuki
  • Furukawa, Taiichi
  • Furukawa, Tsuyoshi
  • Inami, Hajime
  • Nemoto, Ryuichi

Abrégé

A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by a formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by a formula (α); and a solvent. RK1 is a hydrogen atom, a fluorine atom, or the like, L1 is an alkanediyl group, and Rf1 is a fluorinated hydrocarbon group. RW is a monovalent organic group having 3 to 40 carbon atoms that contains a cyclic structure, Rfa and Rfb are each independently a fluorine atom or the like, R11 and R12 are each independently a hydrogen atom, a fluorine atom, or the like, n1 is an integer of 1 to 4, n2 is an integer of 0 to 4, no carbonyl group is present between a sulfur atom of the sulfonic acid ion and the cyclic structure of RW, and Z+ is a monovalent onium cation. A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by a formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by a formula (α); and a solvent. RK1 is a hydrogen atom, a fluorine atom, or the like, L1 is an alkanediyl group, and Rf1 is a fluorinated hydrocarbon group. RW is a monovalent organic group having 3 to 40 carbon atoms that contains a cyclic structure, Rfa and Rfb are each independently a fluorine atom or the like, R11 and R12 are each independently a hydrogen atom, a fluorine atom, or the like, n1 is an integer of 1 to 4, n2 is an integer of 0 to 4, no carbonyl group is present between a sulfur atom of the sulfonic acid ion and the cyclic structure of RW, and Z+ is a monovalent onium cation.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
  • C08F 220/36 - Esters contenant de l'azote contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables

23.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application 18796665
Statut En instance
Date de dépôt 2024-08-07
Date de la première publication 2024-11-28
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto, Ryuichi
  • Furukawa, Taiichi
  • Furukawa, Tsuyoshi
  • Inami, Hajime

Abrégé

A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); an onium salt represented by formula (i); and a solvent. In formula (1), RK1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, L1 is an alkanediyl group having 1 to 5 carbon atoms, and Rf1 is a fluorinated hydrocarbon group having 2 to 10 carbon atoms and 5 to 7 fluorine atoms. In formula (i), Ra1 is a substituted or unsubstituted monovalent organic group having 1 to 40 carbon atoms with no fluorine atom or fluorinated hydrocarbon group attached to an atom adjacent to the sulfur atom, and X+ is a monovalent onium cation. A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); an onium salt represented by formula (i); and a solvent. In formula (1), RK1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, L1 is an alkanediyl group having 1 to 5 carbon atoms, and Rf1 is a fluorinated hydrocarbon group having 2 to 10 carbon atoms and 5 to 7 fluorine atoms. In formula (i), Ra1 is a substituted or unsubstituted monovalent organic group having 1 to 40 carbon atoms with no fluorine atom or fluorinated hydrocarbon group attached to an atom adjacent to the sulfur atom, and X+ is a monovalent onium cation.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/004 - Matériaux photosensibles

24.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Numéro d'application 18026002
Statut En instance
Date de dépôt 2021-07-30
Date de la première publication 2024-11-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a method for forming a pattern. A radiation-sensitive resin composition contains: a resin containing a structural unit (I) having an acid-dissociable group represented by the following formula (1) and a structural unit (II) having a phenolic hydroxy group, and contains neither an organic acid anion moiety nor an onium cation moiety; one or more onium salts containing an organic acid anion moiety and an onium cation moiety; and a solvent, wherein at least part of the onium cation moiety in the onium salt contains an aromatic ring structure having a fluorine atom. In the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and RX is a monovalent hydrocarbon group having 1 to 20 carbon atoms. Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a method for forming a pattern. A radiation-sensitive resin composition contains: a resin containing a structural unit (I) having an acid-dissociable group represented by the following formula (1) and a structural unit (II) having a phenolic hydroxy group, and contains neither an organic acid anion moiety nor an onium cation moiety; one or more onium salts containing an organic acid anion moiety and an onium cation moiety; and a solvent, wherein at least part of the onium cation moiety in the onium salt contains an aromatic ring structure having a fluorine atom. In the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, and RX is a monovalent hydrocarbon group having 1 to 20 carbon atoms.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables

25.

RADIATION-SENSITIVE COMPOSITION FOR FORMING INSULATION FILM, RESIN FILM HAVING PATTERN, AND SEMICONDUCTOR CIRCUIT BOARD

      
Numéro d'application 18284345
Statut En instance
Date de dépôt 2022-03-22
Date de la première publication 2024-11-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Tatara, Ryouji
  • Itou, Hirokazu
  • Ogawa, Taku
  • Nakafuji, Shin-Ya
  • Anabuki, Shoma

Abrégé

A radiation-sensitive composition for forming an insulation film, includes: at least one polyfunctional compound (A) selected from the group consisting of a polyfunctional maleimide compound (A-1) and a polyfunctional styryl compound (A-2); a polymer (B) having a group Y that reacts with a maleimide group in the polyfunctional maleimide compound (A-1) or a styryl group in the polyfunctional styryl compound (A-2); and a photopolymerization initiator (C). The group Y is represented by Formula (Y1). In Formula (Y1), RY1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, LY1 represents a single bond, an alkanediyl group having 1 to 5 carbon atoms, —C(O)O—, —NH—C(O)—NH—, or a group obtained by a combination thereof, and * represents a position bonded to a main chain or a side chain of the polymer (B). A radiation-sensitive composition for forming an insulation film, includes: at least one polyfunctional compound (A) selected from the group consisting of a polyfunctional maleimide compound (A-1) and a polyfunctional styryl compound (A-2); a polymer (B) having a group Y that reacts with a maleimide group in the polyfunctional maleimide compound (A-1) or a styryl group in the polyfunctional styryl compound (A-2); and a photopolymerization initiator (C). The group Y is represented by Formula (Y1). In Formula (Y1), RY1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, LY1 represents a single bond, an alkanediyl group having 1 to 5 carbon atoms, —C(O)O—, —NH—C(O)—NH—, or a group obtained by a combination thereof, and * represents a position bonded to a main chain or a side chain of the polymer (B).

Classes IPC  ?

  • H05K 1/03 - Emploi de matériaux pour réaliser le substrat
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs

26.

RADIATION-SENSITIVE RESIN COMPOSITION, RESIN, COMPOUND, AND PATTERN FORMATION METHOD

      
Numéro d'application 18691090
Statut En instance
Date de dépôt 2022-09-01
Date de la première publication 2024-11-21
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori, Katsuaki
  • Kiriyama, Kazuya
  • Kinoshita, Natsuko
  • Taniguchi, Takuhiro
  • Omiya, Takuya

Abrégé

A radiation-sensitive resin composition includes a resin including a structural unit (I) represented by formula (1). Ra is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; Ar1 is a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 20 carbon atoms; m is 0 or 1; L1 is a single bond, or —O—, *—COO—, a divalent hydrocarbon group having 1 to 20 carbon atoms, or a combination thereof, and * is a bond on an Ar1 side; Ar2 is a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms and substituted with X; X is an iodine atom or a bromine atom; and n1 is an integer of 1 to nmax, wherein nmax is the number of Xs when all hydrogen atoms in the monovalent aromatic hydrocarbon group represented by the Ar2 are substituted with X. A radiation-sensitive resin composition includes a resin including a structural unit (I) represented by formula (1). Ra is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; Ar1 is a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 20 carbon atoms; m is 0 or 1; L1 is a single bond, or —O—, *—COO—, a divalent hydrocarbon group having 1 to 20 carbon atoms, or a combination thereof, and * is a bond on an Ar1 side; Ar2 is a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms and substituted with X; X is an iodine atom or a bromine atom; and n1 is an integer of 1 to nmax, wherein nmax is the number of Xs when all hydrogen atoms in the monovalent aromatic hydrocarbon group represented by the Ar2 are substituted with X.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

27.

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMER

      
Numéro d'application 18782428
Statut En instance
Date de dépôt 2024-07-24
Date de la première publication 2024-11-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1), solubility of the polymer in a developer solution capable of being altered by an acid; and a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a group obtained by removing, from a substituted or unsubstituted aliphatic hydrocarbon ring having 3 to 30 ring atoms, two hydrogen atoms; and Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring atoms. Z represents an acid-labile group; L1 represents *—O—CO— or —O—; Y represents an organic group having 1 to 30 carbon atoms, the organic group not comprising a cyclic acetal structure; A− represents a monovalent anion group; n is an integer of 1 to 5; and X+ represents a monovalent radiation-sensitive onium cation. A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1), solubility of the polymer in a developer solution capable of being altered by an acid; and a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a group obtained by removing, from a substituted or unsubstituted aliphatic hydrocarbon ring having 3 to 30 ring atoms, two hydrogen atoms; and Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring atoms. Z represents an acid-labile group; L1 represents *—O—CO— or —O—; Y represents an organic group having 1 to 30 carbon atoms, the organic group not comprising a cyclic acetal structure; A− represents a monovalent anion group; n is an integer of 1 to 5; and X+ represents a monovalent radiation-sensitive onium cation.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet

28.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Numéro d'application JP2024012734
Numéro de publication 2024/232181
Statut Délivré - en vigueur
Date de dépôt 2024-03-28
Date de publication 2024-11-14
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Omiya, Takuya
  • Nishimura, Souta
  • Mori, Shuto
  • Matsumura, Yushi
  • Nishikori, Katsuaki

Abrégé

The present invention comprises: a polymer (A) which contains a structural unit (U1) having an acid-dissociable group, and has a carboxy group; and a radiation-sensitive acid generator (B) (excluding the polymer (A)). At least one compound that is selected from the group consisting of the polymer (A) and the radiation-sensitive acid generator (B) has an iodine group. The polymer (A) contains a structural unit (U2) having a carboxy group. In the radiation-sensitive composition, the carboxy group in the structural unit (U2) is bonded to a carbon atom that constitutes the main chain of the polymer (A), or the structural unit (U2) has a chain structure and the carboxy group is bonded to the chain structure, or the structural unit (U2) has an aromatic ring which is bonded to a carbon atom that constitutes the main chain of the polymer (A) and the carboxy group is bonded to the aromatic ring.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/20 - Exposition; Appareillages à cet effet

29.

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING RESIST UNDERLAYER FILM, AND CLEANING LIQUID

      
Numéro d'application 18769554
Statut En instance
Date de dépôt 2024-07-11
Date de la première publication 2024-11-07
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ozaki, Yuki
  • Hirabayashi, Hiroki
  • Hirasawa, Kengo
  • Serizawa, Ryuichi

Abrégé

A method for manufacturing a semiconductor substrate, includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; cleaning a periphery of the substrate with a cleaning liquid; and after cleaning the periphery, forming a resist pattern directly or indirectly on the resist underlayer film. The composition for forming a resist underlayer film includes: a metal compound; and a solvent. The cleaning liquid includes an organic acid.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C11D 7/26 - Composés organiques contenant de l'oxygène
  • C11D 7/50 - Solvants
  • G03F 7/004 - Matériaux photosensibles

30.

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN

      
Numéro d'application 18685539
Statut En instance
Date de dépôt 2022-08-30
Date de la première publication 2024-11-07
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

A radiation-sensitive resin composition includes a resin, an acid diffusion controlling agent represented by formula (a), and a solvent. The resin includes: at least one structural unit selected from the group consisting of a structural unit represented by formula (1) and a structural unit represented by formula (2); and a structural unit including a phenolic hydroxy group. Rw is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or an amino group; Lq is a divalent linking group; Z+ is a monovalent radiation-sensitive onium cation; q1 is an integer of 1 to 4; q2 is an integer of 0 to 3; q3 is an integer of 1 to 3; and an upper limit of q1+q2+q3 is 6. A radiation-sensitive resin composition includes a resin, an acid diffusion controlling agent represented by formula (a), and a solvent. The resin includes: at least one structural unit selected from the group consisting of a structural unit represented by formula (1) and a structural unit represented by formula (2); and a structural unit including a phenolic hydroxy group. Rw is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or an amino group; Lq is a divalent linking group; Z+ is a monovalent radiation-sensitive onium cation; q1 is an integer of 1 to 4; q2 is an integer of 0 to 3; q3 is an integer of 1 to 3; and an upper limit of q1+q2+q3 is 6.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

31.

METHOD FOR PRODUCING SURFACE-TREATED SUBSTRATE, METHOD FOR SELECTIVELY MODIFYING SUBSTRATE SURFACE, COMPOSITION, AND COMPOUND

      
Numéro d'application JP2024014597
Numéro de publication 2024/225048
Statut Délivré - en vigueur
Date de dépôt 2024-04-10
Date de publication 2024-10-31
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Komatsu, Hiroyuki
  • Hagi, Shin-Ichirou
  • Suhara, Ryou

Abrégé

According to the present invention, manufactured is a surface-treated substrate by a method including a step for selectively modifying the surface of a substrate by coating the surface of the substrate with a composition. The composition contains: an onium salt having a nitrogen-containing heterocycle and a monovalent organic group having 4 or more carbon atoms; and 1 mass% or more of water with respect to the total amount of the composition.

Classes IPC  ?

  • H01L 21/312 - Couches organiques, p.ex. couche photosensible

32.

METHOD FOR PRODUCING METABOLICALLY ACTIVATED LIVER ORGANOID, COMPOSITION, AND METHOD FOR EVALUATING TEST SUBSTANCE

      
Numéro d'application JP2024016542
Numéro de publication 2024/225466
Statut Délivré - en vigueur
Date de dépôt 2024-04-26
Date de publication 2024-10-31
Propriétaire
  • JSR CORPORATION (Japon)
  • KEIO UNIVERSITY (Japon)
Inventeur(s)
  • Okada Ryo
  • Sato Toshiro
  • Igarashi Ryo

Abrégé

A method for producing a metabolically activated liver organoid, said method comprising a step for culturing primary hepatocytes or hepatocyte-like cells in a differentiation culture medium to obtain a metabolically activated liver organoid, wherein the differentiation culture medium contains: one or two types of agonist selected from the group consisting of growth hormone receptor agonists and prolactin receptor agonists; and a glucocorticoid receptor agonist.

Classes IPC  ?

  • C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains
  • C12N 1/00 - Micro-organismes, p.ex. protozoaires; Compositions les contenant; Procédés de culture ou de conservation de micro-organismes, ou de compositions les contenant; Procédés de préparation ou d'isolement d'une composition contenant un micro-organisme; Leurs milieux de culture
  • C12Q 1/02 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismes; Compositions à cet effet; Procédés pour préparer ces compositions faisant intervenir des micro-organismes viables

33.

CHROMATOGRAPHIC BED INSERT

      
Numéro d'application 18293639
Statut En instance
Date de dépôt 2022-08-16
Date de la première publication 2024-10-24
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Bailey, Daniel M.
  • Stroehlein, Guido

Abrégé

A chromatographic bed insert includes a base having openings and an array of projection members positioned on the base and projecting substantially perpendicular to the base. The chromatographic bed insert has a displacement volume % D which is less than 50% of a volume defined by the chromatographic bed insert and is structured to reduce a hydraulic radius RH of a chromatography bed including the chromatographic bed insert by at least 25% compared to a corresponding chromatography bed which does not include the chromatographic bed insert.

Classes IPC  ?

  • B01D 15/20 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives au conditionnement de la matière adsorbante ou absorbante
  • G01N 30/60 - Préparation de la colonne

34.

ORGANOID PRODUCTION METHOD, CULTURE MEDIUM FOR ORGANOID PRODUCTION, ORGANOID, AND TEST SUBSTANCE EVALUATION METHOD

      
Numéro d'application 18613608
Statut En instance
Date de dépôt 2024-03-22
Date de la première publication 2024-10-17
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Arai, Kazuya
  • Itoh, Manabu
  • Shoji, Kentaro
  • Sugimoto, Natsumi
  • Okada, Ryo

Abrégé

An organoid production method includes culturing a human stem cell in a culture medium containing a cyclic peptide having an amino acid sequence set forth in Formula (1) or a pharmaceutically acceptable salt of the cyclic peptide [in Formula (1), X1 to X6 each represent a specific modified amino acid, X7 represents any amino acid residue, R is absent or represents a C-terminal modification group, n is an integer of 0 or 1, PeG is N-(2-phenylethyl)-glycine, and Nal1 is β-(1-naphthyl)-L-alanine]. An organoid production method includes culturing a human stem cell in a culture medium containing a cyclic peptide having an amino acid sequence set forth in Formula (1) or a pharmaceutically acceptable salt of the cyclic peptide [in Formula (1), X1 to X6 each represent a specific modified amino acid, X7 represents any amino acid residue, R is absent or represents a C-terminal modification group, n is an integer of 0 or 1, PeG is N-(2-phenylethyl)-glycine, and Nal1 is β-(1-naphthyl)-L-alanine].

Classes IPC  ?

  • C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains

35.

RADIOACTIVE-RAY-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023046872
Numéro de publication 2024/209754
Statut Délivré - en vigueur
Date de dépôt 2023-12-27
Date de publication 2024-10-10
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Hachiya,asuka
  • Nishikori,katsuaki
  • Shiratani,motohiro
  • Fuchiwaki,junta
  • Miyazaki,aya

Abrégé

Provided are: a radioactive-ray-sensitive resin composition which makes it possible to form a resist film having satisfactory storage stability and also having excellent sensitivity and LWR performance when a next-generation technology is applied; and a pattern formation method. This radioactive-ray-sensitive resin composition contains: a radioactive-ray-sensitive onium salt including a fluorine atom at a cation portion; a compound represented by formula (H); and a resin including a structural unit having an acid-dissociable group. (In formula (H), R1-R3 each independently represent a substituted or unsubstituted aliphatic hydrocarbon group having 1-20 carbon atoms.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07D 307/58 - Un atome d'oxygène, p.ex. buténolide
  • C07D 317/70 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en ortho ou en péri avec des carbocycles ou avec des systèmes carbocycliques condensés avec des systèmes cycliques contenant au moins deux cycles déterminants
  • C08F 12/14 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant un seul cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

36.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT

      
Numéro d'application JP2024010654
Numéro de publication 2024/209925
Statut Délivré - en vigueur
Date de dépôt 2024-03-19
Date de publication 2024-10-10
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Hikami,yuichi
  • Mita,michihiro
  • Miyake,masayuki
  • Inami,hajime

Abrégé

Provided are: a radiation-sensitive composition able to form a resist film or a pattern that is excellent in terms of sensitivity, LWR performance, DOF performance, pattern squareness, CDU performance, pattern circularity, EL performance and pattern collapse resistance; a method for forming a pattern; and an onium salt. The radiation-sensitive composition contains: an onium salt represented by formula (1); a polymer containing a structural unit having an acid-dissociable group; and a solvent. (In formula (1), Q1and Q2each independently denote a carbon atom or a nitrogen atom. However, at least one of Q1and Q2is a carbon atom. W is a monocyclic or polycyclic non-aromatic ring structure constituted from 3-40 ring-forming members in addition to Q1and Q2in the formula. The formula between Q1and Q2in the formula denotes a single bond or a double bond. (AAA) R1is a monovalent organic group having 1-20 carbon atoms, a nitro group, a hydroxyl group, an amino group, a thiol group, a cyano group, a carboxyl group or a halogen atom. In a case where multiple R1moieties are present, the multiple R111 is an integer between 0 and 4. Z+ is a monovalent onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07D 307/00 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle
  • C07D 307/33 - Atomes d'oxygène en position 2, l'atome d'oxygène étant sous la forme céto ou énol non substituée
  • C07D 317/72 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en spiro avec des carbocycles
  • C07D 321/10 - Cycles à sept chaînons condensés avec des carbocycles ou avec des systèmes carbocycliques
  • C07D 327/06 - Cycles à six chaînons
  • C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
  • C07D 333/46 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome de soufre comme unique hétéro-atome du cycle non condensés avec d'autres cycles substitués sur l'atome de soufre du cycle
  • C07D 333/76 - Dibenzothiophènes
  • C07D 493/02 - Composés hétérocycliques contenant des atomes d'oxygène comme uniques hétéro-atomes dans le système condensé dans lesquels le système condensé contient deux hétérocycles
  • C07D 497/20 - Systèmes condensés en spiro
  • C08F 20/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

37.

COMPOSITION FOR PRODUCING BILE ACIDS

      
Numéro d'application 17793280
Statut En instance
Date de dépôt 2021-01-18
Date de la première publication 2024-10-03
Propriétaire
  • KEIO UNIVERSITY (Japon)
  • JSR CORPORATION (Japon)
Inventeur(s)
  • Hirose, Nobuyoshi
  • Honda, Kenya
  • Sato, Yuko
  • Atarashi, Koji
  • Narushima, Seiko
  • Arai, Yasumichi
  • Takeshita, Kozue
  • Sasajima, Satoshi

Abrégé

The present inventors have found that the content ratios of isoalloLCA, 3-oxoLCA, alloLCA, and 3-oxoalloLCA in the feces of centenarians are higher than those of younger ones, and have also identified gut microbiomes peculiar to centenarians involved in the production of these bile acids. Furthermore, it has been found that these bile acids, enzymes involved in the production thereof, and bacteria producing the enzymes reduce the risk of infection with pathogens, prostate cancer, and the like, and are involved in longevity.

Classes IPC  ?

  • A61K 35/74 - Bactéries
  • A61P 31/04 - Agents antibactériens
  • C12N 1/20 - Bactéries; Leurs milieux de culture
  • C12N 9/04 - Oxydoréductases (1.), p.ex. luciférase agissant sur des groupes CHOH comme donneurs, p.ex. oxydase de glucose, déshydrogénase lactique (1.1)
  • C12P 33/06 - Hydroxylation
  • G01N 33/569 - Tests immunologiques; Tests faisant intervenir la formation de liaisons biospécifiques; Matériaux à cet effet pour micro-organismes, p.ex. protozoaires, bactéries, virus

38.

RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN

      
Numéro d'application 18618304
Statut En instance
Date de dépôt 2024-03-27
Date de la première publication 2024-10-03
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama, Ken

Abrégé

A radiation-sensitive composition includes: a polymer comprising a first structural unit represented by formula (1); and a compound comprising an anion and a radiation-sensitive onium cation. At least one of the polymer and the compound has a ring structure having at least one iodine atom bonded to the ring structure. R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond, —COO—, or —CONH—; Ar1 represents a group obtained by removing two hydrogen atoms from a substituted or unsubstituted aromatic hydrocarbon ring; and R2 represents an acid-labile group. A radiation-sensitive composition includes: a polymer comprising a first structural unit represented by formula (1); and a compound comprising an anion and a radiation-sensitive onium cation. At least one of the polymer and the compound has a ring structure having at least one iodine atom bonded to the ring structure. R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; L1 represents a single bond, —COO—, or —CONH—; Ar1 represents a group obtained by removing two hydrogen atoms from a substituted or unsubstituted aromatic hydrocarbon ring; and R2 represents an acid-labile group.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

39.

COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND POLYMER FOR FORMING RESIST UNDERLAYER FILM

      
Numéro d'application JP2024008969
Numéro de publication 2024/203153
Statut Délivré - en vigueur
Date de dépôt 2024-03-08
Date de publication 2024-10-03
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ehara,kengo
  • Yamada,shuhei
  • Dei,satoshi
  • Dobashi,masato
  • Mayumi,kosuke
  • Tatsubo,daiki

Abrégé

Provided is: a composition for forming a resist underlayer film, the composition being capable of forming a resist underlayer film that is excellent in terms of solvent resistance and pattern rectangularity; a method for producing a semiconductor substrate; and a polymer for forming a resist underlayer film. This composition for forming a resist underlayer film contains: a polymer that has a repeating unit represented by formula (1) or a repeating unit represented by formula (2); and a solvent. (In formula (1), Ar1represents a divalent group that has an aromatic ring having 6 to 20 ring members. RArepresents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms. In formula (2), Ar1represents a divalent group that has an aromatic ring having 6 to 20 ring members. R1and R3each independently represent a substituted or unsubstituted trivalent hydrocarbon group having 1 to 20 carbon atoms. R2and R4each independently represent a hydroxy group or a monovalent organic group. L1and L2each independently represent a single bond or a divalent linking group. RB represents a divalent organic group having 1 to 20 carbon atoms.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C08G 18/32 - Composés polyhydroxylés; Polyamines; Hydroxyamines
  • C08G 18/38 - Composés de bas poids moléculaire contenant des hétéro-atomes autres que l'oxygène
  • C08G 59/24 - Composés diépoxydés carbocycliques
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

40.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Numéro d'application JP2024009865
Numéro de publication 2024/203352
Statut Délivré - en vigueur
Date de dépôt 2024-03-13
Date de publication 2024-10-03
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Hachiya, Asuka
  • Terada, Nozomi

Abrégé

Provided is a radiation-sensitive composition comprising [A] a polymer having a hydroxyl group capable of binding to an aromatic ring and [B] a radiation-sensitive acid generator composed of a cation and a sulfonic acid anion, wherein the cation in the radiation-sensitive acid generator [B] has a fluorine atom, the sulfonic acid anion in the radiation-sensitive acid generator [B] has an aromatic ring (Ia) to which a iodine atom is bound and an aromatic ring (IIa) to which an acidic functional group is bound, no acid functional group is bound to the aromatic ring (Ia), and no iodine atom is bound to the aromatic ring (IIa).

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07D 307/12 - Radicaux substitués par des atomes d'oxygène
  • C07D 317/18 - Radicaux substitués par des atomes d'oxygène ou de soufre liés par des liaisons simples
  • C07D 317/70 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant deux atomes d'oxygène comme uniques hétéro-atomes du cycle comportant les hétéro-atomes en positions 1, 3 condensés en ortho ou en péri avec des carbocycles ou avec des systèmes carbocycliques condensés avec des systèmes cycliques contenant au moins deux cycles déterminants
  • C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
  • C07D 333/46 - Composés hétérocycliques contenant des cycles à cinq chaînons comportant un atome de soufre comme unique hétéro-atome du cycle non condensés avec d'autres cycles substitués sur l'atome de soufre du cycle
  • C07D 333/76 - Dibenzothiophènes
  • C07D 335/12 - Thioxanthènes
  • C07D 339/08 - Cycles à six chaînons
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

41.

METHOD FOR SELECTIVELY MODIFYING SUBSTRATE SURFACE, METHOD FOR PRODUCING SURFACE-TREATED SUBSTRATE, AND COMPOSITION

      
Numéro d'application JP2023046511
Numéro de publication 2024/202340
Statut Délivré - en vigueur
Date de dépôt 2023-12-25
Date de publication 2024-10-03
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Akagi, Soichiro
  • Lin, Han-Ching
  • Mori, Kosuke
  • Huang, Xin-Chun
  • Nakamura, Shuhei

Abrégé

This method for selectively modifying a substrate surface comprises a step for applying a composition onto the surface of the substrate. The composition contains water and a compound (A) having a carboxylate anion component and a C8 or greater monovalent organic group.

Classes IPC  ?

  • H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
  • B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
  • C23C 26/00 - Revêtements non prévus par les groupes

42.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM

      
Numéro d'application JP2024009011
Numéro de publication 2024/203160
Statut Délivré - en vigueur
Date de dépôt 2024-03-08
Date de publication 2024-10-03
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Dobashi,masato
  • Ehara,kengo
  • Dei,satoshi
  • Mayumi,kosuke
  • Yamada,shuhei
  • Tatsubo,daiki
  • Sakai,kazunori
  • Ohtagaki,yasuhiro
  • Akita,shunpei

Abrégé

The present invention provides: a composition for forming a resist underlayer film, the composition being capable of forming a resist underlayer film that is excellent in terms of solvent resistance and pattern rectangularity; and a method for producing a semiconductor substrate. This composition for forming a resist underlayer film contains a polymer that has a repeating unit represented by formula (1), and a solvent. (In formula (1), R1represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. L1represents a single bond or a divalent linking group. Ar1represents a monovalent group having an aromatic ring having 6 to 20 ring members. The hydrogen atom of the aromatic ring is substituted by at least one halogen atom. Ar1has at least one group that is selected from the group consisting of groups represented by formulae (2-1) to (2-8).) (In formulae (2-1) to (2-8), * represents a bond with an atom constituting Ar1, and R7represents a divalent organic group having 1 to 20 carbon atoms, or a single bond. In formula (2-1) and formula (2-7), R8, R9and R10each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. In formula (2-2), ** represents a bond with an atom constituting Cy. Cy represents a ring structure constituted together with two carbon atoms in the formula and having 3 to 20 ring members. R11represents a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or a bond with **. R12represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. In formula (2-3), R13 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C08F 12/24 - Phénols ou alcools
  • C08F 12/32 - Monomères ne contenant qu'un seul radical aliphatique non saturé contenant plusieurs cycles
  • C08F 20/32 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des radicaux époxyde
  • C08F 20/56 - Acrylamide; Méthacrylamide
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

43.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND UNDERLAYER FILM-FORMING COMPOSITION FOR METAL-CONTAINING RESIST

      
Numéro d'application JP2024010059
Numéro de publication 2024/203400
Statut Délivré - en vigueur
Date de dépôt 2024-03-14
Date de publication 2024-10-03
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Takada,kazuya
  • Suzuki,ayaka
  • Nii,akitaka
  • Kasai,tatsuya

Abrégé

Provided are: a composition capable of forming an underlayer film for a metal-containing resist, the composition making it possible to obtain good rectangularity of a resist pattern; and a method for manufacturing a semiconductor substrate. The method for manufacturing a semiconductor substrate includes: a step for directly or indirectly coating a substrate with an underlayer film-forming composition for a metal-containing resist; a step for coating, with a composition for forming a metal-containing resist film, the metal-containing resist underlayer film formed by the coating step for coating with an underlayer film-forming composition for a metal-containing resist; a step for exposing, to extreme ultraviolet radiation, the metal-containing resist film formed by the step for coating with a composition for forming a metal-containing resist film; and a step for developing at least the exposed metal-containing resist film. The underlayer film-forming composition for a metal-containing resist contains a compound having at least one structural unit selected from the group consisting of a structural unit (α-1) represented by formula (1-1) and a structural unit (α-2) represented by formula (1-2), and a solvent. The total content ratio of the structural unit (α-1) and the structural unit (α-2) to all structural units constituting the compound is 50 mol% to 100 mol%. In formula (1-1), X is a C1-20 monovalent aliphatic hydrocarbon group or a C1-20 monovalent aliphatic hydrocarbon group substituted with at least one halogen atom. a is an integer from 1 to 3. When a is 2 or more, the plurality of X's are the same or different from one another. Y is a C1-20 monovalent organic group, a hydroxy group, or a halogen atom. b is an integer from 0 to 2. When b is 2, the two Y's are the same or different from one another. a + b is less than or equal to 3. In formula (1-2), X represents a C1-20 monovalent aliphatic hydrocarbon group or a C1-20 monovalent aliphatic hydrocarbon group substituted with at least one halogen atom. c is an integer from 1 to 3. When c is 2 or more, the plurality of X's are the same or are different from one another. Y is a C1-20 monovalent organic group, a hydroxy group, or a halogen atom. d is an integer from 0 to 2. When d is 2, the two Y's are the same or different from one another. R0is a substituted or unsubstituted C1-20 divalent hydrocarbon group that is bonded to two silicon atoms. p is an integer from 1 to 3. When p is 2 or more, the plurality of R0's are the same or are different from one another. c + d + p is less than or equal to 4.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C08G 77/04 - Polysiloxanes
  • G03F 7/004 - Matériaux photosensibles
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

44.

GAS RELEASING UNDERLAYERS FOR PHOTOPATTERNABLE ORGANOMETALLIC RESIST

      
Numéro d'application US2024019950
Numéro de publication 2024/205936
Statut Délivré - en vigueur
Date de dépôt 2024-03-14
Date de publication 2024-10-03
Propriétaire
  • INPRIA CORPORATION (USA)
  • JSR CORPORATION (Japon)
Inventeur(s)
  • Sakai, Kazunori
  • Kasai, Tatsuya
  • Nii, Akitaka
  • Ortega, Sonia Castellanos

Abrégé

Gas releasing compositions that can facilitate improved patterning of organometallic resists are described. The gas releasing compositions can release water, carbon dioxide, or alcohols in response to radiation or heating. A film-forming composition is composed of a flowable blend of a reactive gas releasing moiety, a matrix forming species, an organic solvent, and an optional activating agent. An underlayer composition is composed of a blend of a reactive gas releasing moiety, a polymer matrix and an optional activating additive. Multilayer structures are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo-hydroxo compositions, which are placed over a gas releasing underlayer formed on a substrate, such as a semiconductor wafer. Methods for patterning multilayer structures are also described.

Classes IPC  ?

  • G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/40 - Traitement après le dépouillement selon l'image, p.ex. émaillage
  • G03F 7/42 - Elimination des réserves ou agents à cet effet

45.

GAS RELEASING UNDERLAYERS FOR PHOTOPATTERNABLE ORGANOMETALLIC RESIST

      
Numéro d'application 18125934
Statut En instance
Date de dépôt 2023-03-24
Date de la première publication 2024-09-26
Propriétaire
  • Inpria Corporation (USA)
  • JSR Corporation (Japon)
Inventeur(s)
  • Sakai, Kazunori
  • Kasai, Tatsuya
  • Nii, Akitaka
  • Schepper, Peter De

Abrégé

Gas releasing compositions that can facilitate improved patterning of organometallic resists are described. The gas releasing compositions can release water, carbon dioxide, or alcohols in response to radiation or heating. A film-forming composition is composed of a flowable blend of a reactive gas releasing moiety, a matrix forming species, an organic solvent, and an optional activating agent. An underlayer composition is composed of a blend of a reactive gas releasing moiety, a polymer matrix and an optional activating additive. Multilayer structures are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo-hydroxo compositions, which are placed over a gas releasing underlayer formed on a substrate, such as a semiconductor wafer. Methods for patterning multilayer structures are also described.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C09D 7/63 - Adjuvants non macromoléculaires organiques
  • C09D 183/16 - Compositions de revêtement à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carbone; Compositions de revêtement à base de dérivés de tels polymères dans lesquels tous les atomes de silicium sont liés autrement que par des atomes d'oxygène

46.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

      
Numéro d'application 18574367
Statut En instance
Date de dépôt 2022-06-01
Date de la première publication 2024-09-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Miyata, Hiromu
  • Taniguchi, Takuhiro

Abrégé

A polymer containing a structural unit (I) represented by formula (1) is included in a radiation-sensitive composition. In formula (1), R2 is a single bond, a divalent hydrocarbon group, or the like. R3 is a divalent group represented by formula (2) or formula (3). R4 is a divalent organic group. Y− is a monovalent anion which can generate a sulfonic acid group, an imidic acid group, or a methide acid group through exposure to light. Ma+ is an a-valent cation. a is 1 or 2. A polymer containing a structural unit (I) represented by formula (1) is included in a radiation-sensitive composition. In formula (1), R2 is a single bond, a divalent hydrocarbon group, or the like. R3 is a divalent group represented by formula (2) or formula (3). R4 is a divalent organic group. Y− is a monovalent anion which can generate a sulfonic acid group, an imidic acid group, or a methide acid group through exposure to light. Ma+ is an a-valent cation. a is 1 or 2.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • C08F 212/08 - Styrène
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
  • G03F 7/004 - Matériaux photosensibles

47.

RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING SUBSTRATE, AND COMPOUND

      
Numéro d'application 18678331
Statut En instance
Date de dépôt 2024-05-30
Date de la première publication 2024-09-26
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto, Ryuichi
  • Mita, Michihiro
  • Miyake, Masayuki

Abrégé

A radiation-sensitive resin composition includes: a compound A represented by formula (I); a resin B including a structural unit having an acid-dissociable group; a radiation-sensitive acid generator other than the compound A; and a solvent. R1 is an (m+m′)-valent organic group and comprises a cyclopropane ring skeleton, a cyclobutane ring skeleton, or both; X1 is a group represented by formula (1-1) or a group represented by formula (1-2); X2 is a group represented by formula (2-1) or a group represented by formula (2-2); Y+ is a monovalent onium cation; m is an integer of 1 to 2, and m′ is an integer of 0 to 1. * represents a bond to another group. A radiation-sensitive resin composition includes: a compound A represented by formula (I); a resin B including a structural unit having an acid-dissociable group; a radiation-sensitive acid generator other than the compound A; and a solvent. R1 is an (m+m′)-valent organic group and comprises a cyclopropane ring skeleton, a cyclobutane ring skeleton, or both; X1 is a group represented by formula (1-1) or a group represented by formula (1-2); X2 is a group represented by formula (2-1) or a group represented by formula (2-2); Y+ is a monovalent onium cation; m is an integer of 1 to 2, and m′ is an integer of 0 to 1. * represents a bond to another group.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs

48.

METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN EXPANDED BEADS AND POLYPROPYLENE-BASED RESIN EXPANDED BEADS

      
Numéro d'application 18278660
Statut En instance
Date de dépôt 2021-12-21
Date de la première publication 2024-09-19
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Nohara, Tokunobu
  • Ode, Yasutaka

Abrégé

A method for producing polypropylene-based resin expanded beads includes dispersion, blowing agent impregnation, and foaming steps. Beads used in the dispersion step include a core layer having a polypropylene-based resin as a base material resin, and a fusion-bonding layer covering core layer; the beads fusion-bonding layer includes carbon black and a NOR-type hindered amine; a carbon black blending ratio is adjusted to 0.5 wt % or more and 5 wt % or less; and an amine blending ratio of the beads is adjusted to 0.03 wt % or more and 0.5 wt % or less; the polypropylene-based resin expanded beads have a surface on which a fusion-bonding layer is located; the fusion-bonding layer includes the carbon black and hindered amine; a carbon black blending ratio is 0.5 wt % or more and 5 wt % or less; and a blending ratio of the hindered amine is 0.03 wt % or more and 0.5 wt % or less.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • C08J 3/12 - Pulvérisation ou granulation
  • C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage
  • C08J 9/232 - Façonnage d'articles en mousse par frittage de particules expansibles
  • C08K 3/04 - Carbone
  • C08K 5/17 - Amines; Composés d'ammonium quaternaire

49.

EXPANDED BEADS OF POLYPROPYLENE-BASED RESIN, AND EXPANDED BEAD MOLDED BODY

      
Numéro d'application JP2023009555
Numéro de publication 2024/189729
Statut Délivré - en vigueur
Date de dépôt 2023-03-13
Date de publication 2024-09-19
Propriétaire
  • JSP INTERNATIONAL SARL (France)
  • JSP CORPORATION (Japon)
Inventeur(s)
  • Vedie Laurianne
  • Trouillet Christophe
  • Kopf Valentin
  • Hira Akinobu

Abrégé

The present invention pertains to expanded beads of a polypropylene-based resin. An expansion layer forming the expanded beads contains the polypropylene-based resin as a base resin and contains a cyclic phosphonate-based compound and an NOR-type hindered amine-based compound. The blended amount of the cyclic phosphonate-based compound in the expansion layer is not less than 5 parts by mass but less than 25 parts by mass with respect to 100 parts by mass of resins forming the expansion layer. The blended amount of the NOR-type hindered amine-based compound in the expansion layer is not less than 0.1 parts by mass but less than 5 parts by mass with respect to 100 parts by mass of resins forming the expansion layer. The expansion layer contains a phenol-based antioxidant. The blended amount of the phenol-based antioxidant in the expansion layer is not less than 0.01 parts by mass but less than 0.5 parts by mass with respect to 100 parts by mass of resins forming the expansion layer. The ratio of the blended amount of the phenol-based antioxidant with respect to the blended amount of the NOR-type hindered amine-based compound is 0.03-0.9. The present invention also pertains to an expanded bead molded body obtained through in-mold molding of the expanded beads.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles

50.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2024004359
Numéro de publication 2024/190204
Statut Délivré - en vigueur
Date de dépôt 2024-02-08
Date de publication 2024-09-19
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori,katsuaki
  • Kobayashi,atsushi
  • Hae,takuma

Abrégé

Provided are: a radiation-sensitive composition which can be formed into a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance and post-develop defect suppression properties when a next-generation technology is applied; and a pattern formation method. The radiation-sensitive composition comprises: a radiation-sensitive acid-generating polymer that contains a first organic acid anion and a first onium cation; at least one component selected from the group consisting of a radiation-sensitive acid generator that contains a second organic acid anion and a second onium cation and has a smaller molecular weight than that of the radiation-sensitive acid-generating polymer and an acid diffusion controlling agent that contains a third organic acid anion and a third onium cation and generates, upon the irradiation with a radioactive ray, an acid having a higher pKa value than that of an acid generated from the radiation-sensitive acid-generating polymer; and a solvent. In the composition, at least one of the first onium cation, the second onium cation and the third onium cation is an iodine/fluorine-containing onium cation that contains an iodine atom and a fluorine atom.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 22/00 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone, l'un au moins étant terminé par un radical carboxyle et contenant au moins ; Leurs sels, anhydrides, esters, amides, imides ou nitriles
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

51.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

      
Numéro d'application JP2024006854
Numéro de publication 2024/190386
Statut Délivré - en vigueur
Date de dépôt 2024-02-26
Date de publication 2024-09-19
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Esaki, Fumiya
  • Shiratani, Motohiro

Abrégé

A polymer containing a structural unit represented by formula (1) is included in this radiation-sensitive composition. In formula (1), R1represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; X1represents a single bond, *1-COO-, *1-CONH-, or a divalent aromatic ring group; W1represents a (r+2)-valent organic group; X2represents *3-COO- or -O-; G1represents an acid-dissociable group; r represents 1 or 2; R2and R3each independently represent a fluorine atom or a fluoroalkyl group; and Ma+ represents an a-valent cation.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 12/30 - Soufre
  • C08F 20/38 - Esters contenant du soufre
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

52.

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE

      
Numéro d'application JP2024008759
Numéro de publication 2024/190595
Statut Délivré - en vigueur
Date de dépôt 2024-03-07
Date de publication 2024-09-19
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Tomita Takuya
  • Akimaru Hisanori

Abrégé

One embodiment of the present invention relates to a photosensitive resin composition. The photosensitive resin composition contains a polymer (A) having an acid-dissociable group, a photoacid generator (B), a solvent (C), and a compound (D). The compound (D) is decomposed by the action of an acid generated from the photoacid generator (B) to become a compound (d) and has a group that is decomposed by the action of the acid to generate a compound (d') (where the compound (D) is different from the polymer (A), and the compound (d) and the compound (d') are non-basic compounds). The boiling point of the compound (d') is 65°C or higher.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C25D 5/02 - Dépôt sur des surfaces déterminées
  • C25D 5/34 - Prétraitement des surfaces métalliques à revêtir de métaux par voie électrolytique
  • C25D 7/00 - Dépôt électrochimique caractérisé par l'objet à revêtir
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/40 - Traitement après le dépouillement selon l'image, p.ex. émaillage

53.

COMPOSITION, METHOD FOR STORING COMPOSITION, AND COMPOUND

      
Numéro d'application JP2024009371
Numéro de publication 2024/190744
Statut Délivré - en vigueur
Date de dépôt 2024-03-11
Date de publication 2024-09-19
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Shimizu Makoto
  • Shiho Hiroshi
  • Kimura Naoto
  • Sakimoto Jun

Abrégé

The composition contains: at least one compound selected from the group consisting of a first compound represented by formula (2) and a second compound having a metal atom and a ligand represented by formula (1); and an aqueous solvent.

Classes IPC  ?

  • C07F 15/00 - Composés contenant des éléments des groupes 8, 9, 10 ou 18 de la classification périodique
  • C23C 16/00 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD)

54.

METHOD FOR PRODUCING POLYPROPYLENE-BASED RESIN EXPANDED BEAD AND METHOD FOR PRODUCING MOLDED ARTICLE OF EXPANDED BEADS

      
Numéro d'application 18549445
Statut En instance
Date de dépôt 2022-03-11
Date de la première publication 2024-09-12
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Sakamura, Takumi
  • Ohta, Hajime

Abrégé

A method for producing polypropylene-based resin (PPBR) expanded beads may include dispersing, first expanding, and second expanding. In the dispersing, resin particles are dispersed in a dispersion medium, the resin particles each including a core layer, containing carbon black blended into PPBR in a predetermined ratio, based on 100 parts by mass of PPBR, and a covering layer covering the core layer, containing carbon black blended into a polyolefin-based resin (POBR) in a predetermined ratio, based on 100 parts by mass of POBR. The first expanding expands the core layer of the resin particle to obtain a first expanded bead having a bulk ratio of 5 to 25 times. The second expanding expands the first expanded beads further to obtain second expanded beads. An M2/M1 ratio of a bulk ratio M2 of the second expanded beads to a bulk ratio M1 of the first expanded beads is 1.2 to 3.0.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • B29C 44/02 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage pour la fabrication d'objets de longueur définie, c.à d. d'objets séparés
  • B29C 44/34 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage - Eléments constitutifs, détails ou accessoires; Opérations auxiliaires
  • B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
  • B29K 105/00 - Présentation, forme ou état de la matière moulée
  • B29K 105/04 - Présentation, forme ou état de la matière moulée cellulaire ou poreuse
  • B29K 105/16 - Charges
  • B29K 507/04 - Carbone
  • C08J 3/12 - Pulvérisation ou granulation
  • C08J 9/00 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement
  • C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage

55.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2024001314
Numéro de publication 2024/185308
Statut Délivré - en vigueur
Date de dépôt 2024-01-18
Date de publication 2024-09-12
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama,ken

Abrégé

Provided are a radiation-sensitive composition which can be formed into a resist film capable of providing satisfactory levels of sensitivity and CDU performance when a next-generation technology is applied, and a pattern formation method. The radiation-sensitive composition comprises: a radiation-sensitive acid-generating polymer containing a structural unit (I) having an acid-dissociable group represented by formula (1), and a structural unit (II) having an organic acid anion (b1) and an onium cation (b2); and a solvent. The radiation-sensitive acid-generating polymer has an iodine-substituted aromatic ring structure. (In formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R2is a single bond or a divalent organic group. R3, R4, and R5are each independently a substituted or unsubstituted C1 to C20 monovalent hydrocarbon group, or a monovalent organic group represented by –OR7(R7is a C1 to C12 monovalent hydrocarbon group). R6is a halogen atom, a hydroxy group, an alkyl group, an alkoxy group, a cyano group, a nitro group, or an amino group. When there are a plurality of R6, the R6 may be the same or different. Cy represents a 3- to 20-membered alicyclic structure formed together with carbon atoms bonded thereto. r is an integer of 0 to 10. r is equal to or less than (one less than the number of ring members in the alicyclic structure).

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07D 333/76 - Dibenzothiophènes
  • C08F 20/10 - Esters
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

56.

ANTIBACTERIAL COMPOSITION COMPRISING GLUCONIC ACID-CONSUMING BACTERIA AS ACTIVE INGREDIENT

      
Numéro d'application JP2024008014
Numéro de publication 2024/185738
Statut Délivré - en vigueur
Date de dépôt 2024-03-04
Date de publication 2024-09-12
Propriétaire
  • KEIO UNIVERSITY (Japon)
  • JSR CORPORATION (Japon)
Inventeur(s)
  • Honda Kenya
  • Furuichi Munehiro
  • Hasegawa Naomi
  • Sasajima Satoshi
  • Atarashi Koji
  • Ohya Takashi
  • Aoto Yoshimasa

Abrégé

Provided is an antibacterial composition against a second bacterium that consumes gluconic acid, such as inflammation-inducing bacteria and drug-resistant bacteria, the composition containing, as an active ingredient, a first bacterium that consumes gluconic acid.

Classes IPC  ?

  • A61K 35/741 - Probiotiques
  • A23L 33/135 - Bactéries ou leurs dérivés, p.ex. probiotiques
  • A61P 31/04 - Agents antibactériens
  • C12Q 1/04 - Détermination de la présence ou du type de micro-organisme; Emploi de milieux sélectifs pour tester des antibiotiques ou des bactéricides; Compositions à cet effet contenant un indicateur chimique
  • C12N 1/20 - Bactéries; Leurs milieux de culture

57.

CHEMICAL-MECHANICAL POLISHING COMPOSITION AND POLISHING METHOD

      
Numéro d'application JP2024006201
Numéro de publication 2024/181261
Statut Délivré - en vigueur
Date de dépôt 2024-02-21
Date de publication 2024-09-06
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Kamei, Yasutaka

Abrégé

The present invention provides a chemical-mechanical polishing composition with which it is possible to increase the polishing rate of a tungsten film and reduce the occurrence of corrosion and defects on the tungsten surface, and also provides a polishing method. This chemical-mechanical polishing composition contains (A) abrasive grains, (B) a heterocyclic compound, and (C) a liquid medium, and MA/MB=50 to 10,000, where MA (parts by mass) is the (A) component content, and MB (parts by mass) is the (B) component content.

Classes IPC  ?

  • H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
  • B24B 37/00 - Machines ou dispositifs de rodage; Accessoires
  • C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
  • C09K 3/14 - Substances antidérapantes; Abrasifs

58.

CHEMICAL-MECHANICAL POLISHING COMPOSITION AND POLISHING METHOD

      
Numéro d'application JP2024006202
Numéro de publication 2024/181262
Statut Délivré - en vigueur
Date de dépôt 2024-02-21
Date de publication 2024-09-06
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Kamei, Yasutaka

Abrégé

The present invention provides a chemical-mechanical polishing composition with which it is possible to increase the polishing rate of a tungsten film and reduce the occurrence of corrosion and defects on the tungsten surface, and also provides a polishing method. This chemical-mechanical polishing composition contains: (A) abrasive grains; (B1) a heterocyclic compound that does not include a halogen atom; (B2) a heterocyclic compound that includes at least one halogen atom; and (C) a liquid medium. The (A) component content is 1-20 parts by mass, inclusive, relative to 100 parts by mass of the chemical-mechanical polishing composition.

Classes IPC  ?

  • H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
  • B24B 37/00 - Machines ou dispositifs de rodage; Accessoires
  • C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
  • C09K 3/14 - Substances antidérapantes; Abrasifs

59.

METHOD FOR SELECTIVELY MODIFYING SUBSTRATE SURFACE, METHOD FOR PRODUCING SURFACE-TREATED SUBSTRATE, AND COMPOSITION

      
Numéro d'application JP2024006855
Numéro de publication 2024/181373
Statut Délivré - en vigueur
Date de dépôt 2024-02-26
Date de publication 2024-09-06
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Komatsu, Hiroyuki
  • Hagi, Shin-Ichirou
  • Suhara, Ryou

Abrégé

The present invention provides a method for selectively modifying a substrate surface, the method comprising a step for applying a composition to the surface of the substrate, the composition containing water and a compound (A) having a nitrogen-containing heterocyclic ring and a monovalent organic group having 4 or more carbon atoms.

Classes IPC  ?

  • H01L 21/312 - Couches organiques, p.ex. couche photosensible

60.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATION AGENT

      
Numéro d'application JP2024007065
Numéro de publication 2024/181434
Statut Délivré - en vigueur
Date de dépôt 2024-02-27
Date de publication 2024-09-06
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Mita,michihiro
  • Nishii,atsuto
  • Inami,hajime

Abrégé

The present invention provides: a radiation-sensitive composition that can form a resist film capable of exhibiting a sufficient level of sensitivity, LWR, pattern rectangularity, image development defect performance, EL, CDU, and pattern circularity; a pattern formation method; and a radiation-sensitive acid generation agent. The radiation-sensitive composition contains: an onium salt compound represented by formula (1); a polymer including a structural unit having an acid dissociable group; and a solvent. (In formula (1), W is a C3-40 organic group having at least one ring structure. L is a linking group having a valency of (r+1), where r is an integer between 1 and 3. When r is 1, p and q are both integers between 1 and 3, and when r is 2 or 3, each of p and q is an integer between 0 and 3. However, when r is 2 or 3, at least one among the plurality of ps is 1 or more and at least one among the plurality of qs is 1 or more. M+ is a monovalent onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

61.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND COMPOSITION

      
Numéro d'application 18636755
Statut En instance
Date de dépôt 2024-04-16
Date de la première publication 2024-08-29
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Dobashi, Masato
  • Komatsu, Hiroyuki
  • Yoneda, Eiji
  • Dei, Satoshi
  • Ehara, Kengo
  • Yoshinaka, Sho
  • Katagiri, Takashi

Abrégé

A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms. A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/075 - Composés contenant du silicium
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

62.

METHOD FOR MANUFACTURING MOLDED ARTICLE OF POLYPROPYLENE-BASED RESIN EXPANDED BEADS

      
Numéro d'application 18656664
Statut En instance
Date de dépôt 2024-05-07
Date de la première publication 2024-08-29
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Sasaki, Kenta

Abrégé

In a method for manufacturing a molded article of polypropylene-based resin expanded beads, expanded beads compressed by pressurized gas are filled in a mold, and then a heating medium is supplied into the mold to perform in-mold molding on the expanded beads in the mold. The expanded bead has a tubular shape with a through-hole. An average hole diameter d of the through-hole is 0.1 mm or more and less than 1 mm, and a ratio d/D of the average hole diameter d of the through-hole to an average outer diameter D of the expanded bead is 0.4 or less. A compression ratio P of the expanded beads in a state where the expanded beads are filled in the mold is 20% or more and 80% or less.

Classes IPC  ?

  • B29C 44/44 - Alimentation en matière à mouler dans une cavité de moulage fermée, c.à d. pour la fabrication d'objets de longueur définie sous forme de particules ou de grains expansibles
  • B29C 44/34 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage - Eléments constitutifs, détails ou accessoires; Opérations auxiliaires
  • B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
  • B29K 105/04 - Présentation, forme ou état de la matière moulée cellulaire ou poreuse

63.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD

      
Numéro d'application JP2024001309
Numéro de publication 2024/176672
Statut Délivré - en vigueur
Date de dépôt 2024-01-18
Date de publication 2024-08-29
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Shiratani,motohiro
  • Nishikori,katsuaki
  • Kiriyama,kazuya
  • Ohtagaki,yasuhiro
  • Yamakawa,shouya

Abrégé

Provided are: a radiation-sensitive composition which makes it possible to form a resist film that is capable of exhibiting satisfactory levels of sensitivity and LWR when a next-generation technology is applied; and a pattern forming method. Specifically provided is a radiation-sensitive composition which comprises a solvent and a radiation-sensitive acid-generating polymer containing a structural unit (I) represented by formula (1) and a structural unit (II) having an acid dissociable group. (In formula (1), Ar represents an (n + m + r + 1)-valent aromatic hydrocarbon group; R11represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; R12represents a cyano group, a nitro group, an alkyl group, an alkoxy group, a fluorinated alkyl group or an acyl group; in cases where a plurality of R12moieties are present, the plurality of R12moieties may be the same as or different from each other; L represents a single bond or a divalent linking group; Rf1and Rf2each independently represent a hydrogen atom, a fluorine atom or a monovalent fluorinated hydrocarbon group, provided that the Rf1and Rf2moieties are not hydrogen atoms at the same time; Rf3and Rf4each independently represent a hydrogen atom, a fluorine atom or a monovalent fluorinated hydrocarbon group; in cases where a plurality of Rf3moieties and a plurality of Rf4moieties are present, the plurality of Rf3moieties and the plurality of Rf4moieties may be the same as or different from each other, respectively; n represents an integer of 1 to 10; m represents an integer of 0 to 3; p represents an integer of 0 to 10; r represents 1 or 2; and M+ represents a monovalent onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

64.

POLYETHYLENE RESIN MULTILAYER FOAM SHEET, INTERLEAVING PAPER FOR GLASS PLATES, AND METHOD FOR MANUFACTURING POLYETHYLENE RESIN MULTILAYER FOAM SHEET

      
Numéro d'application 18019619
Statut En instance
Date de dépôt 2021-08-06
Date de la première publication 2024-08-29
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Taniguchi, Ryuichi
  • Nishimoto, Takashi

Abrégé

The multilayer foam sheet includes a polyethylene resin foam layer and a resin layer laminated on at least one of the two surfaces of the foam layer. The resin layer has a multilayer structure formed from a surface layer and an intermediate layer. Both the surface layer and the intermediate layer contain a polyethylene resin and a polymeric antistatic agent. The polymeric antistatic agent is contained in the intermediate layer at a proportion of 30-70 wt % (inclusive). The polymeric antistatic agent is contained in the surface layer at a proportion of at least 5 wt % to less than 30 wt %.

Classes IPC  ?

  • B29C 48/00 - Moulage par extrusion, c. à d. en exprimant la matière à mouler dans une matrice ou une filière qui lui donne la forme désirée; Appareils à cet effet
  • B29C 48/21 - Articles comprenant au moins deux composants, p.ex. couches coextrudées les composants étant des couches les couches étant jointes à leurs surfaces
  • B29K 25/00 - Utilisation de polymères de composés vinylaromatiques comme matière de moulage
  • B29K 105/00 - Présentation, forme ou état de la matière moulée
  • B29K 105/04 - Présentation, forme ou état de la matière moulée cellulaire ou poreuse
  • B29L 7/00 - Objets plats, p.ex. pellicules ou feuilles

65.

POLYPROPYLENE-BASED RESIN EXPANDED BEAD, METHOD FOR PRODUCING SAME, AND MOLDED ARTICLE OF POLYPROPYLENE-BASED RESIN EXPANDED BEADS

      
Numéro d'application 18569292
Statut En instance
Date de dépôt 2022-06-17
Date de la première publication 2024-08-22
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Sakamura, Takumi
  • Ohta, Hajime

Abrégé

A polypropylene-based resin expanded bead having a tubular shape with a through-hole, containing a foamed core layer constituted by a polypropylene-based resin and a fusion-bonding layer covering the foamed core layer. An average hole diameter d of the through-hole in the expanded bead is less than 1 mm, and a ratio d/D of the average hole diameter d to an average outer diameter D of the expanded bead is 0.4 or less, a mass ratio of the foamed core layer and the fusion-bondable layer is foamed core layer:fusion-bondable layer=99.5:0.5 to 85:15, and the polypropylene-based resin constituting the foamed core layer has a flexural modulus of 800 MPa or more and less than 1200 MPa and a melting point Tmc of 150° C. or lower.

Classes IPC  ?

  • C08J 9/228 - Façonnage d'articles en mousse
  • B29B 9/12 - Fabrication de granulés caractérisés par la structure ou la composition
  • B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
  • B29K 105/04 - Présentation, forme ou état de la matière moulée cellulaire ou poreuse
  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage

66.

COMPOSITION, METAL-CONTAINING FILM, METAL-CONTAINING FILM FORMATION METHOD, AND COMPOSITION PRODUCTION METHOD

      
Numéro d'application 18632646
Statut En instance
Date de dépôt 2024-04-11
Date de la première publication 2024-08-22
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Ootsubo, Yuusuke

Abrégé

A composition includes: a metal compound; a compound having an oxymethylene structure; and a solvent. The metal compound is a metal salt or a metal complex. The compound having an oxymethylene structure is capable of generating an aldehyde structure when degraded through heating. A metal atom contained in the metal compound preferably belongs to any one of periods 3 to 7 among groups 2 to 14 in a periodic table.

Classes IPC  ?

  • C09D 159/04 - Copolyoxyméthylènes
  • C09D 1/00 - Compositions de revêtement, p.ex. peintures, vernis ou vernis-laques, à base de substances inorganiques
  • C09D 5/24 - Peintures électriquement conductrices

67.

CULTURE METHOD, CULTURE PRODUCT, SPHEROID, AND METHOD FOR SCREENING FOR TEST SUBSTANCE

      
Numéro d'application 18648566
Statut En instance
Date de dépôt 2024-04-29
Date de la première publication 2024-08-22
Propriétaire
  • JSR CORPORATION (Japon)
  • KEIO UNIVERSITY (Japon)
Inventeur(s)
  • Hiramine, Hayato
  • Nagashima, Ryosuke
  • Maeda, Sumihiro
  • Okano, Hideyuki
  • Ishikawa, Mitsuru

Abrégé

A culture method includes culturing a spheroid of a human neural cell-like cell in the presence of a tau protein aggregate and culturing a culture product in a culture medium containing 5 μg/mL or greater of a lipid, in which the lipid is one or more selected from the group consisting of a glycerolipid, a glycerophospholipid, and a sphingolipid. The culture method includes culturing a spheroid of a human neural cell-like cell in the presence of a tau protein aggregate and culturing a culture product in a culture medium containing a neurotrophic factor.

Classes IPC  ?

68.

POLYAMIDE-BASED RESIN FOAMED PARTICLES AND POLYAMIDE-BASED RESIN FOAMED PARTICLE MOLDED BODY

      
Numéro d'application JP2024002833
Numéro de publication 2024/171791
Statut Délivré - en vigueur
Date de dépôt 2024-01-30
Date de publication 2024-08-22
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Suenaga Katsuyuki

Abrégé

Provided are: polyamide-based resin foamed particles exhibiting good in-mold moldability and capable of providing a foamed particle molded body exhibiting excellent flame retardancy; and a polyamide-based resin foamed particle molded body excellent in moldability and flame retardancy. The polyamide-based resin foamed particles according to the present invention comprise a polyamide-based resin, a certain flame retardant a, and a certain flame retardant b, wherein the total of the blended amount of the flame retardant a and the blended amount of the flame retardant b is 10-30 parts by mass based on 100 parts by mass of a base material resin including the polyamide-based resin, the mass ratio between the blended amount of the flame retardant a and the blended amount of the flame retardant b is 90:10 to 30:70 (the total of the flame retardant a and the flame retardant b is 100% by mass), the average bubble diameter A of the polyamide-based resin foamed particles is 5-100 μm, and the average bubble diameter B of five bubbles selected in descending order of area per one bubble among bubbles observed on a cut surface formed by bisecting a polyamide-based resin foamed particle is 250 μm or less. The polyamide-based resin foamed particle molded body is formed by in-mold molding the polyamide-based resin foamed particles.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles

69.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2024001119
Numéro de publication 2024/166630
Statut Délivré - en vigueur
Date de dépôt 2024-01-17
Date de publication 2024-08-15
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama,ken

Abrégé

Provided are a radiation-sensitive composition and pattern formation method that, when next generation technology is employed, can form a resist film that can exhibit sensitivity, CDU, a residual film ratio, LWR, and pattern rectangularity at satisfactory levels. The radiation-sensitive composition comprises a solvent (C) and a radiation-sensitive acid-generating polymer (P) containing a structural unit (II) having a first organic acid anion and a first onium cation. The radiation-sensitive composition also satisfies at least one condition selected from the group consisting of the following condition 1 and condition 2. < Condition 1 > The radiation-sensitive composition contains at least one selection from the group consisting of radiation-sensitive acid generators (A) that contain a second organic acid anion and a second onium cation and have a molecular weight lower than the radiation-sensitive acid-generating polymer and radiation-sensitive weak acid generators (B1) that contain a third organic acid anion and a third onium cation and that upon exposure to radiation generate an acid having a pKa higher than that of the acid generated from the radiation-sensitive acid-generating polymer (P). In addition, at least one selection from the group consisting of the radiation-sensitive acid-generating polymer (P), the radiation-sensitive acid generator (A), and the radiation-sensitive weak acid generator (B1) contains the iodine atom. In addition, at least one of the first onium cation, second onium cation, and third onium cation contains the fluorine atom. < Condition 2 > The radiation-sensitive acid-generating polymer (P) contains a structural unit (I) having an acid-dissociable group; the radiation-sensitive composition contains at least two acid diffusion control agents (B), one of which has an organic acid anion (b1) and a fluorine-containing onium cation (b2) containing the fluorine atom; and the radiation-sensitive composition contains a radiation-sensitive weak acid generator (B11) that, under conditions in which dissociation of the acid-dissociable group is caused by the acid produced by exposure of the radiation-sensitive acid-generating polymer to radiation, generates an acid that does not induce dissociation of the acid-dissociable group.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 20/10 - Esters
  • C08F 212/08 - Styrène
  • C08F 220/24 - Esters contenant un halogène contenant des radicaux perhaloalkyle
  • C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
  • C08F 220/38 - Esters contenant du soufre
  • C08L 101/02 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par la présence de groupes déterminés
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

70.

CHROMATOGRAPHIC DEVICE

      
Numéro d'application 18566826
Statut En instance
Date de dépôt 2022-06-23
Date de la première publication 2024-08-08
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Bailey, Daniel M.
  • Pearl, Steven R.
  • Stroehlein, Guido

Abrégé

A chromatographic device, including a housing including an inlet and an outlet of a fluid, an inlet distribution plate positioned inside the housing such that the inlet distribution plate receives a fluid flowing through the inlet and distributes the flow inside the housing, an inlet frit plate positioned on the inlet distribution plate, a chromatography medium placed inside the housing, at least one multi-planar screen positioned inside the housing to receive the fluid to be separated from the inlet distribution plate and the inlet frit plate, the multi-planar screen being structured such that the chromatography medium is held inside thereof, and that the fluid to be separated from the inlet distribution plate and the inlet frit plate passes through the chromatography medium, an outlet distribution plate that receives the fluid separated, and an outlet frit plate positioned on the outlet distribution plate such that the outlet frit plate receives a force created by the flow of the fluid through the chromatography medium.

Classes IPC  ?

  • B01D 15/14 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives à l'introduction de l'alimentation dans l'appareil
  • B01D 15/18 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives aux différents types d'écoulement
  • B01D 15/22 - Adsorption sélective, p.ex. chromatographie caractérisée par des caractéristiques de structure ou de fonctionnement relatives à la structure de la colonne

71.

DATA COLLECTION ASSISTANCE PROGRAM, DATA COLLECTION ASSISTANCE METHOD, AND DATA COLLECTION ASSISTANCE DEVICE

      
Numéro d'application JP2024000078
Numéro de publication 2024/161907
Statut Délivré - en vigueur
Date de dépôt 2024-01-05
Date de publication 2024-08-08
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Maeda, Akane
  • Noda, Kohei
  • Ohnishi, Yu-Ya
  • Furuichi, Kota
  • Otsuka, Noboru

Abrégé

The present invention assists efficient collection of material data. A storage unit (11) stores a plurality of material data acquired from a database (21). The plurality of material data are used for creating a prediction model (11a) for predicting material properties. A processing unit (12), upon receiving a request to register a first material data in the database (21), calculates an evaluation value on the basis of the plurality of material data stored in the storage unit (11) and the first material data, the evaluation value indicating the usefulness of the first material data with respect to the prediction model (11a), and outputs the evaluation value.

Classes IPC  ?

  • G16C 20/70 - Apprentissage automatique, exploration de données ou chimiométrie

72.

COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD

      
Numéro d'application JP2024002162
Numéro de publication 2024/162160
Statut Délivré - en vigueur
Date de dépôt 2024-01-25
Date de publication 2024-08-08
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ishimaki, Koki
  • Yamaguchi, Misato
  • Hagi, Shinichiro

Abrégé

Provided is a composition for chemical mechanical polishing which, when used for chemical mechanical polishing (CMP) of a semiconductor wafer including a molybdenum film and a silicon oxide film, can selectively polish the molybdenum film by attaining an increased molybdenum-film polishing rate and a reduced silicon-oxide-film polishing rate and which can be inhibited from corroding the molybdenum film. This composition for chemical mechanical polishing comprises (A) abrasive grains, (B) a compound represented by general formula (1), (C) a compound having both a C10 or higher alkyl group and at least one functional group selected from the group consisting of an amino group and salts thereof, and (D) an iron(III) compound, wherein, when the content of the (B) component is expressed by MB (parts by mass) and the content of the (C) component is expressed by MC (parts by mass), then MB/MC is 0.01-45. The composition for chemical mechanical polishing has a pH of 1-5. (In formula (1), R1, R2, and R3each independently represent an alkyl group having up to n carbon atoms, R4represents an aryl group, a hydroxy group, or a C5 or less alkyl group, M- represents a monovalent anion, and n is an integer of 1-4.)

Classes IPC  ?

  • H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
  • B24B 37/00 - Machines ou dispositifs de rodage; Accessoires
  • C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
  • C09K 3/14 - Substances antidérapantes; Abrasifs

73.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

      
Numéro d'application 18435001
Statut En instance
Date de dépôt 2024-02-07
Date de la première publication 2024-08-01
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Komatsu, Hiroyuki
  • Dobashi, Masato
  • Dei, Satoshi
  • Ehara, Kengo
  • Yoshinaka, Sho
  • Yoneda, Eiji
  • Katagiri, Takashi

Abrégé

A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C08F 12/08 - Styrène
  • C08F 12/20 - Fluor
  • C08F 12/24 - Phénols ou alcools
  • C08F 12/26 - Azote
  • C08F 12/30 - Soufre
  • C08F 26/06 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par une liaison simple ou double à l'azote ou par un hétérocycle contenant de l'azote
  • C09D 125/08 - Copolymères du styrène
  • C09D 125/18 - Homopolymères ou copolymères de monomères aromatiques contenant des éléments autres que le carbone et l'hydrogène
  • C09D 139/04 - Homopolymères ou copolymères de monomères contenant des hétérocycles possédant de l'azote dans le cycle

74.

CHEMICAL MECHANICAL POLISHING COMPOSITION AND POLISHING METHOD

      
Numéro d'application 18577266
Statut En instance
Date de dépôt 2022-08-01
Date de la première publication 2024-08-01
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Ishimaki, Koki
  • Nakamura, Shuhei
  • Kamei, Yasutaka
  • Nishimura, Kohei

Abrégé

The present invention provides a chemical mechanical polishing composition with which it is possible to suppress ruthenium corrosion and also perform chemical mechanical polishing of a semiconductor substrate containing ruthenium while maintaining a stable polishing speed. The composition for chemical mechanical polishing of the present invention contains: (A) abrasive grains; (B) an acid containing at least one anion selected from the group consisting of periodate ions (IO4−), hypochlorite ions (CIO−), chlorite ions (CIO2−) and hypobromite ions (BrO−) or a salt of said acid; and (C) hydrogen peroxide. MB/MC=0.015 to 11, where MB (mol/L) is the amount of the (B) acid or salt thereof and MC (mol/L) is the amount of hydrogen peroxide (C).

Classes IPC  ?

  • C09G 1/02 - Compositions de produits à polir contenant des abrasifs ou agents de polissage
  • H01L 21/321 - Post-traitement
  • H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif

75.

BIOMIMETIC SYSTEM AND METHOD FOR MANUFACTURING SAME

      
Numéro d'application 18626424
Statut En instance
Date de dépôt 2024-04-04
Date de la première publication 2024-07-25
Propriétaire
  • JSR CORPORATION (Japon)
  • KENDAI TRANSLATIONAL RESEARCH CENTER (Japon)
Inventeur(s)
  • Masuda, Norio
  • Okada, Ryo
  • Ogihara, Takuo

Abrégé

A biomimetic system includes: a container; and a human cholangiocyte-like cell-containing membrane, in which the human cholangiocyte-like cell-containing membrane includes a permeable base plate and a two-dimensional tissue of human cholangiocyte-like cells stacked on one surface of the permeable base plate, the human cholangiocyte-like cell-containing membrane divides the container into a first compartment and a second compartment, a one surface side of the permeable base plate is exposed in the first compartment, the other surface side of the permeable base plate is exposed in the second compartment, the human cholangiocyte-like cells express P-gp, and an efflux ratio calculated by Formula (1) is 1.5 or more, efflux ratio=(permeation rate of rhodamine 123 that permeates from the second compartment to the first compartment)/(permeation rate of rhodamine 123 that permeates the second compartment from the first compartment) . . . (1)

Classes IPC  ?

  • C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
  • C12M 1/00 - Appareillage pour l'enzymologie ou la microbiologie
  • C12M 1/12 - Appareillage pour l'enzymologie ou la microbiologie avec des moyens de stérilisation, filtration ou dialyse
  • C12N 5/071 - Cellules ou tissus de vertébrés, p.ex. cellules humaines ou tissus humains
  • G01N 33/50 - Analyse chimique de matériau biologique, p.ex. de sang ou d'urine; Test par des méthodes faisant intervenir la formation de liaisons biospécifiques par ligands; Test immunologique

76.

METHOD FOR PRODUCING POLYMER, POLYMER PRODUCTION DEVICE, AND SYSTEM FOR OPTIMIZING RADICAL POLYMERIZATION REACTION

      
Numéro d'application JP2024001440
Numéro de publication 2024/154818
Statut Délivré - en vigueur
Date de dépôt 2024-01-19
Date de publication 2024-07-25
Propriétaire
  • JSR CORPORATION (Japon)
  • NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
  • Asano,shigehito
  • Sugawara,tetsunori
  • Ohnishi,yu-Ya
  • Wakiuchi,araki
  • Fujii,mikiya
  • Ajiro,hiroharu

Abrégé

maxmaxmaxmaxmaxmaxmax.

Classes IPC  ?

  • C08F 2/01 - Procédés de polymérisation caractérisés par des éléments particuliers des appareils de polymérisation utilisés
  • C08F 4/04 - Composés azoïques
  • C08F 20/00 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et un seul étant terminé par un seul radical carboxyle ou un sel, anhydride,

77.

SPIN CURRENT MAGNETIZATION ROTATING ELEMENT, MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC MEMORY

      
Numéro d'application IB2024050407
Numéro de publication 2024/154050
Statut Délivré - en vigueur
Date de dépôt 2024-01-16
Date de publication 2024-07-25
Propriétaire
  • THE UNIVERSITY OF TOKYO (Japon)
  • JSR CORPORATION (Japon)
Inventeur(s)
  • Ishikawa, Takahiro
  • Akashi, Ryosuke
  • Kubo, Koutarou
  • Toga, Yuuta
  • Inukai, Kouji
  • Rittaporn, Itti
  • Hayashi, Masamitsu
  • Tsuneyuki, Shinji

Abrégé

A spin current magnetization rotating element includes: a first ferromagnetic layer having a magnetization direction which is changeable; and a spin-orbit torque wiring layer adjacent to the first ferromagnetic layer. At least one element in the spin-orbit torque writing layer has a crystal structure in which, when dimensions of a lattice constant of the crystal structure are expressed by a, b, and c: atoms occupy internal coordinates: (0, 0, 0), (0.5, 0.5, 0), (0.25, 0.75, 0.25), (0.75, 0.25, 0.25), (0, 0.5, 0.5), (0.5, 0, 0.5), (0.75, 0.75, 0.75), and (0.25, 0.25, 0.75); ab planes are laminated so as to have a four-time spiral structure along c axis; and an angle between a axis and b axis (γ) is in a range of 60° ≤ γ ≤ 120°, and a ratio of b to a (b/a) is in a range of 0.2 ≤ b/a ≤ 1.0.

Classes IPC  ?

  • H10N 50/10 - Dispositifs magnéto-résistifs
  • H10N 50/80 - Dispositifs galvanomagnétiques - Détails de structure

78.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023045939
Numéro de publication 2024/154534
Statut Délivré - en vigueur
Date de dépôt 2023-12-21
Date de publication 2024-07-25
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama,ken

Abrégé

The present invention provides a radiation-sensitive composition and pattern formation method capable of forming a resist film which can provide sufficient levels of sensitivity, resolution, and CDU performance when applying next-generation technologies. The present invention pertains a radiation-sensitive composition that is a combination of: a radiation-sensitive acid-generating polymer which includes a solvent and two or more onium salts including organic acid anions and onium cations, wherein the onium salt includes a structural unit (I) represented by formula (1) below and a structural unit (II) having the abovementioned organic acid anions and the abovementioned onium cations; and at least one substance selected from the group consisting of a radiation-sensitive acid generating agent including the abovementioned organic acid anions and abovementioned onium cations, and an acid diffusion control agent which includes the abovementioned organic acid anions and the abovementioned onium cations and generates an acid having a higher pKa than the acid generated by the radiation-sensitive acid-generating agent due to irradiation, at least some of the onium cations in the radiation-sensitive acid-generating agent and the acid diffusion control agent being fluorine-containing onium cations including a fluorine atom. (In formula (1), Rαis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. L is a single bond or a divalent linking group. P is 0 or 1. R101is a halogen atom, a nitro group, a cyano group, a hydroxy group, an alkoxy group, or an amino group. When a plurality of R101are present, the plurality of R101can be identical or different. Q is an integer from 0 to 3. R1 is an acid-dissociable group having a tertiary carbon atom bonded to an oxygen atom.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 12/22 - Oxygène
  • C08F 20/12 - Esters des alcools ou des phénols monohydriques
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

79.

POLYETHYLENE-BASED RESIN MULTILAYER FOAM SHEET, INTERLEAF SHEET FOR GLASS PLATES, AND METHOD FOR MANUFACTURING POLYETHYLENE-BASED RESIN MULTILAYER FOAM SHEET

      
Numéro d'application 17927935
Statut En instance
Date de dépôt 2021-05-28
Date de la première publication 2024-07-18
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Takeuchi, Ryohei
  • Nishimoto, Takashi

Abrégé

The multilayer foam sheet has a surface resistivity of 1×1013Ω or less and has a foam layer and resin layers that are laminated on both surfaces of the foam layer. The resin layers each have a multilayer structure formed from a surface layer and an intermediate layer that is positioned between the surface layer and the foam layer. The foam layer includes a polyethylene-based resin PE2. The intermediate layers are configured from an antistatic mixture containing a polyethylene-based resin PE3 and a polymeric antistatic agent. The surface layers are configured from a mixed resin containing a polyethylene-based resin PE4 and a polystyrene-based resin, and substantially do not contain the polymeric antistatic agent. The polystyrene-based resin content of the mixed resin is 3-35 wt %.

Classes IPC  ?

  • B32B 27/08 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique d'une résine synthétique d'une sorte différente
  • B29C 48/00 - Moulage par extrusion, c. à d. en exprimant la matière à mouler dans une matrice ou une filière qui lui donne la forme désirée; Appareils à cet effet
  • B29C 48/21 - Articles comprenant au moins deux composants, p.ex. couches coextrudées les composants étant des couches les couches étant jointes à leurs surfaces
  • B29K 23/00 - Utilisation de polyalcènes comme matière de moulage
  • B29K 25/00 - Utilisation de polymères de composés vinylaromatiques comme matière de moulage
  • B29K 105/00 - Présentation, forme ou état de la matière moulée
  • B32B 27/06 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique
  • B32B 27/18 - Produits stratifiés composés essentiellement de résine synthétique caractérisée par l'emploi d'additifs particuliers
  • B32B 27/32 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyoléfines
  • B32B 37/14 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches
  • B32B 37/15 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches avec au moins une couche qui est fabriquée et immédiatement stratifiée avant d'atteindre un état stable, p.ex. dans lesquels une couche est extrudée et stratifiée à l'état semi-pâteux
  • B32B 38/00 - Opérations auxiliaires liées aux procédés de stratification

80.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND

      
Numéro d'application JP2023042975
Numéro de publication 2024/150553
Statut Délivré - en vigueur
Date de dépôt 2023-11-30
Date de publication 2024-07-18
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori Katsuaki
  • Ohtagaki Yasuhiro

Abrégé

Provided is a radiation-sensitive composition having excellent sensitivity, CDU and preservation stability. The radiation-sensitive composition comprises: a polymer, the solubility of which in a developing solution changes due to the action of an acid; an anion represented by formula (1); and a radiation-sensitive onium cation which includes an aromatic ring that has at least one hydrogen atom substituted with a fluorine atom or a fluorine atom-containing group.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 69/36 - Esters d'acide oxalique
  • C07C 381/12 - Composés sulfonium
  • C07D 317/64 - Atomes d'oxygène
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

81.

ELPAC HC-G

      
Numéro d'application 1798945
Statut Enregistrée
Date de dépôt 2024-05-02
Date d'enregistrement 2024-05-02
Propriétaire JSR CORPORATION (Japon)
Classes de Nice  ?
  • 01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
  • 17 - Produits en caoutchouc ou en matières plastiques; matières à calfeutrer et à isoler

Produits et services

Unprocessed artificial resins as raw materials in the form of powders, liquids or pastes; unprocessed synthetic resins; thermally curable unprocessed synthetic resins; thermoplastic resins, unprocessed; unprocessed artificial resins for use in manufacture; chemical coatings used in the manufacture of printed circuit boards; chemicals for use in industry; synthetic resin adhesives for industrial purposes; contact adhesives for use with laminates; adhesives for industrial purposes. Semi-processed synthetic resins; semi-processed thermoplastic polymer resins for use in manufacture; semi-processed plastic substances made of thermally curable resins; semi-processed plastics.

82.

METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM

      
Numéro d'application 18440124
Statut En instance
Date de dépôt 2024-02-13
Date de la première publication 2024-07-11
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Tatsubo, Daiki
  • Kawazu, Tomoharu
  • Miyauchi, Hiroyuki
  • Hayashi, Yuya
  • Katagiri, Takashi
  • Tanaka, Ryotaro

Abrégé

A method for forming a resist underlayer film includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a coating film. The coating film is heated at a heating temperature of higher than 450° C. and 600° C. or lower in an atmosphere having an oxygen concentration of less than 0.01% by volume. The composition for forming a resist underlayer film includes: a compound including an aromatic ring; a polymer which thermally decomposes at the heating temperature in heating the coating film, and which is other than the compound; and a solvent. The compound has a molecular weight of 400 or more. A content of the polymer is less than a content of the compound in the composition for forming a resist underlayer film.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C09D 161/06 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes avec des phénols
  • C09D 161/12 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes avec des phénols avec des phénols polyhydriques
  • H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
  • H01L 21/311 - Gravure des couches isolantes

83.

PHOTOSENSITIVE COMPOSITION

      
Numéro d'application 18554029
Statut En instance
Date de dépôt 2022-04-06
Date de la première publication 2024-07-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Matsumoto, Tomoyuki
  • Matsumoto, Ryuu
  • Ito, Atsushi

Abrégé

An object of the present invention is to provide a photosensitive composition capable of producing a pattern having a precise shape without causing curing defects of a coating film even when the time is required from exposure of the coating film to the next step. A photosensitive composition of the present invention contains a polymer (A), a polymerizable compound (B), a photoacid generator (C), and a solvent (D), in which the polymerizable compound (B) includes an epoxy compound (B-1) containing two or more groups represented by the following Formula (1) and a specific epoxy compound (B-2) other than the epoxy compound (B-1), and an epoxy compound containing an epoxy group fused to an alicyclic group is contained in an amount of 50 mass % or more with respect to a total of 100 mass % of the polymerizable compound (B). An object of the present invention is to provide a photosensitive composition capable of producing a pattern having a precise shape without causing curing defects of a coating film even when the time is required from exposure of the coating film to the next step. A photosensitive composition of the present invention contains a polymer (A), a polymerizable compound (B), a photoacid generator (C), and a solvent (D), in which the polymerizable compound (B) includes an epoxy compound (B-1) containing two or more groups represented by the following Formula (1) and a specific epoxy compound (B-2) other than the epoxy compound (B-1), and an epoxy compound containing an epoxy group fused to an alicyclic group is contained in an amount of 50 mass % or more with respect to a total of 100 mass % of the polymerizable compound (B). - L - Ep ( 1 )

Classes IPC  ?

  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/033 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p.ex. composés éthyléniques avec des liants les liants étant des polymères obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone, p.ex. polymères vinyliques

84.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Numéro d'application JP2023041890
Numéro de publication 2024/142681
Statut Délivré - en vigueur
Date de dépôt 2023-11-21
Date de publication 2024-07-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nishikori Katsuaki
  • Omiya Takuya
  • Shiratani Motohiro
  • Hachiya Asuka

Abrégé

This radiation-sensitive composition contains: a polymer which has a first structural unit containing a partial structure in which a hydrogen atom of a carboxy group or a phenolic hydroxyl group is substituted with an acid dissociation group represented by formula (1); and a compound which has an anion section including one anion group and an aromatic ring in which one or more hydrogen atoms are substituted with an iodine atom, and also has a radiation-sensitive onium cation section.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

85.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD, COMPOSITION, AND POLYMER

      
Numéro d'application JP2023044550
Numéro de publication 2024/142925
Statut Délivré - en vigueur
Date de dépôt 2023-12-13
Date de publication 2024-07-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Yamada,shuhei
  • Tsuji,takashi
  • Nakatsu,hiroki
  • Katagiri,takashi
  • Abe,shinya

Abrégé

Provided are: a semiconductor substrate production method using a composition which is capable of forming a film that has excellent heat resistance and bending resistance; the composition; and a polymer. This semiconductor substrate production method comprises: a step for applying a resist underlayer film-forming composition directly or indirectly to a substrate; a step for forming a resist pattern directly or indirectly on a resist underlayer film formed in the application step; and a step for performing etching using the resist pattern as a mask, the resist underlayer film-forming composition containing a solvent and a polymer having a repeating unit represented by formula (1). [Formula 1] (In formula (1), Ar1is a divalent group having a 5- to 40-membered aromatic ring structure. Z is a divalent group having an alicyclic structure with 3 to 20 carbons. Either Ar1and/or Z includes at least one group having at least one group selected from the group consisting of a group represented by formula (2-1) and a group represented by formula (2-2).) [Formula 2] (In formulae (2-1) and (2-2), R7 is, independently, a single bond or a divalent organic group with 1 to 20 carbons, and * is a bond with another structure in the polymer.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage

86.

POLYPROPYLENE-BASED RESIN FOAM PARTICLE, AND POLYPROPYLENE-BASED RESIN FOAM PARTICLE MOLDED ARTICLE

      
Numéro d'application JP2023046466
Numéro de publication 2024/143286
Statut Délivré - en vigueur
Date de dépôt 2023-12-25
Date de publication 2024-07-04
Propriétaire JSP CORPORATION (Japon)
Inventeur(s) Masumoto Hisashi

Abrégé

Provided are: a polypropylene-based resin foam particle which contains a biomass-derived polypropylene-based resin and can provide a superior polypropylene-based resin foam particle molded article; and a polypropylene-based resin foam particle molded article which is produced using the polypropylene-based resin foam particle. In the polypropylene-based resin foam particle, a base resin for the foam particle comprises a biomass-derived polypropylene-based resin A having a biomass-derived monomer component in a molecule chain thereof and a fossil fuel-derived polypropylene-based resin B, in which the base resin comprises 3% by weight to 60% by weight inclusive of the biomass-derived polypropylene-based resin A and 40% by weight to 97% by weight inclusive of the fossil fuel-derived polypropylene-based resin B (in which the total of the amounts of both of the components is 100% by weight). The foam particle molded article is formed by molding the polypropylene-based resin foam particle in a mold.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles
  • C08L 23/10 - Homopolymères ou copolymères du propylène

87.

RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

      
Numéro d'application JP2023037498
Numéro de publication 2024/142556
Statut Délivré - en vigueur
Date de dépôt 2023-10-17
Date de publication 2024-07-04
Propriétaire JSR CORPORATION (Japon)
Inventeur(s) Maruyama,ken

Abrégé

Provided are: a radiation-sensitive resin composition which can be formed into a resist film capable of providing satisfactory levels of sensitivity and CDU performance when a next-generation technology is applied; and a pattern formation method. This radiation-sensitive resin composition comprises: a radiation-sensitive acid-generating resin including a structural unit (I) and a structural unit (II), wherein the structural unit (I) has an acid dissociable group, the structural unit (II) has an organic acid anionic moiety and an onium cationic moiety, and each of the acid dissociable group and the organic acid anionic moiety has an iodine-substituted aromatic ring structure; and a solvent.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/30 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle contenant des cycles aromatiques dans la partie alcool
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

88.

EXPANDED PARTICLES OF POLYPROPYLENE-BASED RESIN, METHOD FOR PRODUCING SAME, AND MOLDED OBJECT FORMED FROM EXPANDED PARTICLES OF POLYPROPYLENE-BASED RESIN

      
Numéro d'application JP2023043154
Numéro de publication 2024/142761
Statut Délivré - en vigueur
Date de dépôt 2023-12-01
Date de publication 2024-07-04
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Ito Yosuke
  • Chiba Takuya

Abrégé

Expanded particles of a polypropylene-based resin, which contain an inorganic phosphinic acid salt and a melamine-compound flame retardant. In the expanded particles, the amount of the inorganic phosphinic acid salt incorporated therein is 0.5 mass% or more, the amount of the melamine-compound flame retardant incorporated therein is 0.05 mass% or more, and the sum of the amount of the inorganic phosphinic acid salt incorporated therein and the amount of the melamine-compound flame retardant incorporated therein is 5 mass% or less. The expanded particles further contain a first antioxidant which comprises a phenolic antioxidant and a second antioxidant which comprises a phosphorus-compound antioxidant and/or a sulfur-compound antioxidant. In the expanded particles, the sum of the amount of the first antioxidant incorporated therein and the amount of the second antioxidant incorporated therein is 0.05-0.6 mass%, and the ratio of the amount of the second antioxidant incorporated therein to the amount of the first antioxidant incorporated therein is 0.5-10.

Classes IPC  ?

  • C08J 9/16 - Fabrication de particules expansibles

89.

METHOD FOR PRODUCING CELLULAR POLYOLEFIN-BASED PLASTIC PARTICLES

      
Numéro d'application 18558025
Statut En instance
Date de dépôt 2022-04-27
Date de la première publication 2024-06-27
Propriétaire JSP Corporation (Japon)
Inventeur(s)
  • Dzikowski, Pascal
  • Janoušek, Jan

Abrégé

The invention relates to a method for producing cellular plastic particles, including the steps of: —providing a plastic material in the form of pre-expanded plastic material particles, —loading the pre-expanded plastic material particles with a blowing agent under the influence of pressure, —expanding the pre-expanded plastic material particles loaded with blowing agent in order to produce cellular plastic particles, more particularly, cellular plastic particles having lower density, under the influence of temperature, in which the expanding of the plastic material particles loaded with blowing agent is carried out under the influence of temperature by irradiation of the plastic material particles loaded with blowing agent with high-energy thermal radiation, more particularly, infrared radiation.

Classes IPC  ?

  • C08J 9/18 - Fabrication de particules expansibles par imprégnation des particules du polymère avec l'agent de gonflage
  • C08J 9/228 - Façonnage d'articles en mousse

90.

FIREPROOF HEAT INSULATING BOARD AND FIREPROOF HEAT INSULATING STRUCTURE

      
Numéro d'application 17909098
Statut En instance
Date de dépôt 2021-03-03
Date de la première publication 2024-06-27
Propriétaire
  • JSP CORPORATION (Japon)
  • DENKA COMPANY LIMITED (Japon)
Inventeur(s)
  • Tabara, Kazuto
  • Nagasaki, Hironori
  • Mizuta, Kohei
  • Mitsumoto, Masanori
  • Shimojo, Yoshinori
  • Kikkawa, Hironobu

Abrégé

A fireproof heat insulating board including a foamed resin molded body filled with a slurry, the foamed resin molded body having continuous voids, wherein the filled slurry forms a hydrate containing water of crystallization in an amount of 50 kg/m3 or more through hydration reaction after the filling, and at least a part of the surface of the board is reinforced with one or more inorganic fibers selected from the group consisting of a basalt fiber and a ceramic fiber.

Classes IPC  ?

  • E04B 1/94 - Protection contre d'autres agents indésirables ou dangers contre le feu
  • B32B 5/02 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par les caractéristiques de structure d'une couche comprenant des fibres ou des filaments
  • B32B 5/18 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches contient un matériau sous forme de mousse ou essentiellement poreux
  • B32B 5/24 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par la présence de plusieurs couches qui comportent des fibres, filaments, grains ou poudre, ou qui sont sous forme de mousse ou essentiellement poreuses une des couches étant fibreuse ou filamenteuse
  • C04B 14/42 - Verre
  • C04B 14/46 - Laine minérale
  • C04B 16/06 - Composés macromoléculaires fibreux
  • C04B 16/08 - Composés macromoléculaires poreux, p.ex. perles de polystyrène expansé
  • C04B 28/06 - Ciments alumineux
  • C04B 28/14 - Compositions pour mortiers, béton ou pierre artificielle, contenant des liants inorganiques ou contenant le produit de réaction d'un liant inorganique et d'un liant organique, p.ex. contenant des ciments de polycarboxylates contenant des ciments de sulfate de calcium
  • C04B 28/16 - Compositions pour mortiers, béton ou pierre artificielle, contenant des liants inorganiques ou contenant le produit de réaction d'un liant inorganique et d'un liant organique, p.ex. contenant des ciments de polycarboxylates contenant des ciments de sulfate de calcium contenant de l'anhydrite
  • C04B 111/00 - Fonction, propriétés ou utilisation des mortiers, du béton ou de la pierre artificielle
  • C04B 111/28 - Résistance au feu

91.

COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

      
Numéro d'application JP2023043257
Numéro de publication 2024/135316
Statut Délivré - en vigueur
Date de dépôt 2023-12-04
Date de publication 2024-06-27
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Suzuki,ayaka
  • Nii,akitaka
  • Kasai,tatsuya

Abrégé

The purpose of the present invention is to provide: a composition which can form a silicon-containing film with which it is possible to suppress resist pattern collapsing and improve film removability; and a method for producing a semiconductor substrate. Provided is a composition which comprises: a compound having at least one structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2) (in which, when the compound has a structural unit represented by formula (1-1), the compound has at least one structural unit selected from the group consisting of a structural unit represented by formula (1-2) and a structural unit represented by formula (2-1)); and a solvent. (In formula (1-1), X represents a monovalent organic group having 2 to 20 carbon atoms and having a heteroaromatic ring; a represents an integer of 1 to 3; when a is 2 or more, a plurality of X's are the same as or different from each other; Y represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group or a halogen atom; b represents an integer of 0 to 2; when b is 2, the two Y's are the same as or different from each other; and a+b is 3 or less. In formula (1-2), X represents a monovalent organic group having 2 to 20 carbon atoms and having a heteroaromatc ring; c represents an integer of 1 to 3; when c is 2 or more, a plurality of X's are the same as or different from each other; Y represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group or a halogen atom; d represents an integer of 0 to 2; when d is 2, the two Y's are the same as or different from each other; R0represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 20 carbon atoms and bound to two silicon atoms; p represents an integer of 1 to 3; when p is 2 or more, a plurality of R0's are the same as or different from each other; and c+d+p is 4 or less.) (In formula (2-1), R1represents a monovalent organic group having 1 to 20 carbon atoms (excluding a heteroaromatic ring), a hydroxy group, a hydrogen atom or a halogen atom; h represents 1 or 2; when h is 2, the two R1's are the same as or different from each other; R2represents a substituted or unsubstituted bivalent hydrocarbon group having 1 to 20 carbon atoms and bound to two silicon atoms; q represents an integer of 1 to 3; when q is 2 or more, a plurality of R2's are the same as or different from each other; and h+q is 4 or less.)

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C08G 77/28 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant du soufre
  • C08L 83/14 - Compositions contenant des composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carbone; Compositions contenant des dérivés de tels polymères dans lesquels au moins deux atomes de silicium, mais pas la totalité sont liés autrement que par des atomes d'oxygène
  • G03F 7/20 - Exposition; Appareillages à cet effet

92.

POLYETHYLENE RESIN FOAM PARTICLE MOLDED BODY AND METHOD FOR PRODUCING SAME

      
Numéro d'application JP2023044061
Numéro de publication 2024/135414
Statut Délivré - en vigueur
Date de dépôt 2023-12-08
Date de publication 2024-06-27
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Tsuda Yuji
  • Ohta Hajime

Abrégé

The present invention provides a method for producing a foam particle molded body, wherein a mold is filled with cylindrical foam particles (1) having through holes, and a heating medium is supplied to fusion bond the foam particles (1) to each other, thereby producing a foam particle molded body. The foam particles (1) each have a foam layer that is configured from a polyethylene resin. The closed cell ratio of the foam particles (1) is 80% or more. The average diameter (d) of the through holes (11) in the foam particles (1) is less than 1 mm. The ratio (d/D) of the average diameter (d) to the average outer diameter (D) of the foam particles is 0.4 or less. The open cell ratio of the foam particle molded body is 8% to 20%.

Classes IPC  ?

  • C08J 9/228 - Façonnage d'articles en mousse
  • C08J 9/16 - Fabrication de particules expansibles

93.

CHROMATOGRAPHY APPARATUS, SLURRY FILLING METHOD, AND CHROMATOGRAPHY SYSTEM

      
Numéro d'application JP2023037676
Numéro de publication 2024/127801
Statut Délivré - en vigueur
Date de dépôt 2023-10-18
Date de publication 2024-06-20
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Mizuguchi Yusaku
  • Stroehlein, Guido
  • Pearl, Steven R.

Abrégé

[Problem] To provide: a chromatography apparatus and chromatography system that present a uniform chromatography medium and have a robust bed; and a slurry filling method that fills a slurry into said chromatography apparatus. [Solution] The chromatography apparatus has: a housing that contains a fluid inlet and a fluid outlet and has a plurality of side walls that face each other; an inflow frit plate that is disposed within the housing and is configured so as to distribute the flow of a fluid; a chromatography medium that is supported by the housing and is configured to receive, from the inflow frit plate, a fluid to be partitioned; and an outflow frit plate that is disposed within the housing and is configured to receive a fluid that has passed through the chromatography medium. The inlet frit plate, the outflow frit plate, and the plurality of side walls surround the chromatography medium so as to retain the chromatography medium in a prescribed position, and the individual side walls have slurry introduction holes having an opening area that is 0.1% to 10.0% of the area of the single side wall.

Classes IPC  ?

  • B01J 20/281 - Absorbants ou adsorbants spécialement adaptés pour la chromatographie préparative, analytique ou de recherche
  • G01N 30/60 - Préparation de la colonne

94.

COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING RESIST UNDERLAYER FILM AND METHOD FOR PRODUCING METAL COMPOUND

      
Numéro d'application JP2023042920
Numéro de publication 2024/128013
Statut Délivré - en vigueur
Date de dépôt 2023-11-30
Date de publication 2024-06-20
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Hirasawa,kengo
  • Serizawa,ryuichi
  • Ozaki,yuki

Abrégé

The present invention provides: a composition for forming a resist underlayer film, the composition having excellent embeddability, while enabling the peripheral edge of a substrate to have good cleansing properties after the formation of a film; a method for producing a semiconductor substrate; a method for forming a resist underlayer film; and a method for producing a metal compound. This composition for forming a resist underlayer film contains a metal compound and a solvent, the metal compound contains a reaction product of a metal amide compound and a carboxylic acid, and a metal atom contained in the metal compound is at least one that is selected from the group consisting of titanium, zirconium, hafnium, niobium, tantalum, aluminum, gallium, indium, germanium, tin and antimony.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

95.

POROUS BODY AND SOUND-ABSORBING MATERIAL

      
Numéro d'application 18553641
Statut En instance
Date de dépôt 2022-03-15
Date de la première publication 2024-06-20
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Kaneko, Yohei
  • Nakamura, Hayato

Abrégé

A porous body including, as a base resin, a crosslinked polymer obtained by crosslinking a polymer of an acrylic monomer and/or a styrene-based monomer. A storage modulus of the porous body is 5 kPa or more and 2000 kPa or less at 23° C., an apparent density of the porous body is 10 kg/m3 or more and 250 kg/m3 or less, and a molecular weight between crosslinking points of the crosslinked polymer is 1.0×104 or more.

Classes IPC  ?

  • C08J 9/228 - Façonnage d'articles en mousse
  • C08F 232/06 - Copolymères de composés cycliques ne contenant pas de radicaux aliphatiques non saturés dans une chaîne latérale et contenant une ou plusieurs liaisons doubles carbone-carbone dans un système carbocyclique ne contenant pas de cycles condensés contenant plusieurs doubles liaisons carbone-carbone
  • C08J 9/00 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement
  • G10K 11/162 - Sélection de matériaux

96.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Numéro d'application JP2023037922
Numéro de publication 2024/127808
Statut Délivré - en vigueur
Date de dépôt 2023-10-19
Date de publication 2024-06-20
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Omiya, Takuya
  • Ito, Ryo
  • Nakagawa, Atsushi
  • Matsumura, Yuushi
  • Nishikori, Katsuaki

Abrégé

This radiation-sensitive composition contains: (A) a polymer having a structural unit represented by formula (1); and (B) an onium salt compound which is formed of an organic anion and a cation, in which the organic anion, the cation, or both thereof have an iodo group, and which generates an acid when being irradiated with radiation. In the formula, B1represents a single bond or a divalent organic group that has at least one carbon atom and that binds to E+at the carbon atom. E+represents a divalent group having an ammonium cation structure or a phosphonium cation structure. B2represents a divalent organic group that has at least one carbon atom and that binds to both E+and D-by the same carbon atom or by different carbon atoms. D- represents a monovalent group having an anion structure.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

97.

METHOD FOR PRODUCING POLYETHYLENE RESIN FOAM SHEET, AND POLYETHYLENE RESIN FOAM SHEET

      
Numéro d'application JP2023044709
Numéro de publication 2024/128267
Statut Délivré - en vigueur
Date de dépôt 2023-12-13
Date de publication 2024-06-20
Propriétaire JSP CORPORATION (Japon)
Inventeur(s)
  • Kayanoki Yusuke
  • Katsuyama Naoya
  • Kakuta Hirotoshi

Abrégé

The present invention provides: a method for producing a polyethylene resin foam sheet, the method being capable of producing a good polyethylene resin foam sheet without using an inorganic material or a chemical foaming agent; and a polyethylene resin foam sheet. The present invention relates to a method for producing a polyethylene resin foam sheet by subjecting an expandable resin melt that contains a polyethylene resin and a physical foaming agent to extrusion foaming, wherein: a first means uses, as the physical foaming agent, nitrogen and at least one organic physical foaming agent that is selected from among hydrocarbons having 3 to 5 carbon atoms and dialkyl ethers having an alkyl group with 1 to 3 carbon atoms; the sum (A + B) of the addition amount A of the organic physical foaming agent and the addition amount B of the nitrogen is 0.5 mol to 5 mol per 1 kg of the resin component: the addition amount B of the nitrogen is 0.1 mol to 0.4 mol per 1 kg of the resin component; and the addition amounts are adjusted so that the ratio (A/B) of the addition amount A of the organic physical foaming agent to the addition amount B of the nitrogen is 2 to 18. In addition, a polyethylene resin foam sheet according to the present invention has a density of 20 kg/m3to 100 kg/m3 and an average number of cells in the thickness direction of 0.5 per mm to 5 per mm, the ash content of this foam sheet is less than 0.1% by mass (including 0), and the ratio of sodium in the ash content is 10% by mass or less (including 0).

Classes IPC  ?

  • C08J 9/12 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolaires; Leur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage

98.

PHOTOSENSITIVE RESIN COMPOSITION, RESIN FILM HAVING PATTERN, PRODUCTION METHOD FOR SAME, AND SEMICONDUCTOR CIRCUIT BOARD

      
Numéro d'application JP2023043471
Numéro de publication 2024/122542
Statut Délivré - en vigueur
Date de dépôt 2023-12-05
Date de publication 2024-06-13
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Tatara Ryoji
  • Nakafuji Shin-Ya
  • Sakuma Tetsuya
  • Okuda Ryuichi
  • Doi Takashi
  • Ooto Junichi
  • Kato Takahiro

Abrégé

One aspect of the present invention relates to a photosensitive resin composition, said photosensitive resin composition comprising: (A) an alkali-soluble polymer, (B) a photosensitizer; (C) a crosslinkable compound having a crosslinkable group that, with heat, reacts with the following component (D); (D) a compound represented by general formula (1); and (E) a solvent. [In general formula (1), X11represents a nitrogen atom or the like, R11represents a hydrogen atom or a group represented by general formula (2) (in general formula (2), L21represents a single bond or the like, R21represents a hydrogen atom or the like, R22represents a monovalent organic group, and n21to n23represent integers of 0 or greater), at least one of the three R11is a group represented by general formula (2), and in at least one group represented by general formula (2), n21is an integer of 1 or greater, and at least one R21 is a hydrogen atom.]

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C08F 12/22 - Oxygène
  • C08G 73/10 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
  • C08G 73/22 - Polybenzoxazoles
  • G03F 7/023 - Quinonediazides macromoléculaires; Additifs macromoléculaires, p.ex. liants

99.

RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Numéro d'application JP2023034686
Numéro de publication 2024/116575
Statut Délivré - en vigueur
Date de dépôt 2023-09-25
Date de publication 2024-06-06
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Inami,hajime
  • Otsuka,noboru

Abrégé

Provided are: a radiation-sensitive resin composition from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed even when a resist pattern having a high aspect ratio is formed; a pattern formation method; and a radiation-sensitive acid generator. The radiation-sensitive resin composition contains an onium salt compound represented by formula (1), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1, R2and R3are each independently a monovalent chain organic group having 1-10 carbon atoms. R4, R5, and R6are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group. When there are a plurality of R4, R5, and R6, the plurality of R4, R5, and R6are the same as or different from each other. Rf1is a fluorine atom or a monovalent fluorinated hydrocarbon group. When there are a plurality of Rf1, the plurality of Rf1122 is an integer of 1-4. Z+ is a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

100.

RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID-GENERATING AGENT

      
Numéro d'application JP2023034692
Numéro de publication 2024/116576
Statut Délivré - en vigueur
Date de dépôt 2023-09-25
Date de publication 2024-06-06
Propriétaire JSR CORPORATION (Japon)
Inventeur(s)
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Inami,hajime
  • Otsuka,noboru

Abrégé

Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance, and pattern circularity can be formed in formation of a resist pattern having a high aspect ratio; a pattern formation method; and a radiation-sensitive acid-generating agent. This radiation-sensitive resin composition contains: an onium salt compound (1) expressed by formula (1); an onium salt compound (2) that is different from the aforementioned onium salt compound (1); a resin that includes structural units having acid-dissociable groups; and a solvent. (In formula (1), W represents a C1-40 monovalent chain-form organic group, a C5 or lower monovalent cyclic organic group, or a monovalent group obtained by combining a C1-40 monovalent chain-form organic group and a C5 or lower monovalent cyclic organic group. R1and R2each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group. In cases in which a plurality of R1and R2are present, the plurality of Rf1and Rf2may be the same as, or different from, each other. R3, R4, and R511 is an integer of 1 to 8. Z+ is a monovalent radiation-sensitive onium cation.)

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C09K 3/00 - Substances non couvertes ailleurs
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
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