Abstract

Proposed are an attachable microphone and a manufacturing method therefor. The attachable microphone includes a substrate (100) including a back chamber (110) and a first frame member (120), a back plate part (200) being disposed on the substrate (100) and including a plurality of first through holes (210) and a back plate (220), a first electrode part (300) being disposed on the back plate part (200) and having a plurality of second through holes (310) and a first electrode member (320), a support part (400) being disposed on the first electrode part (300) and including a front chamber (410) and a second frame member (420), a second electrode part (500) being disposed on the support part (400) and including a second electrode member (510), and a diaphragm (600) being disposed on the second electrode part (500) and including a thin film (610).

IPC Classes  ?

• B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• H04R 1/46 - Special adaptations for use as contact microphones, e.g. on musical instrument, on stethoscope

Abstract

SPLSPL), and can be attached to various surfaces including skin and curved surfaces.

IPC Classes  ?

• H04R 1/46 - Special adaptations for use as contact microphones, e.g. on musical instrument, on stethoscope
• H04R 9/08 - Microphones
• H04R 7/18 - Mounting or tensioning of diaphragms or cones at the periphery

Abstract

Disclosed are a skin attachment-type fluid collecting patch and a manufacturing method therefor. The skin attachment-type fluid collecting patch according to the present invention has a wedge pattern of hydrophobic/hydrophilic parts and thus enables faster collection of fluids than existing fluid collection devices and is not affected by changes in slope caused by body movements when attached to the skin, and can be used while coupled to various types of sensors.

IPC Classes  ?

• A61B 5/145 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value
• A61B 10/00 - Instruments for taking body samples for diagnostic purposesOther methods or instruments for diagnosis, e.g. for vaccination diagnosis, sex determination or ovulation-period determinationThroat striking implements
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons

Abstract

Proposed is a vibration sensor including: a substrate; a first electrode positioned on the substrate; a support positioned on the first electrode and including a cylindrical hollow hole; and a diaphragm including a thin film positioned on the support and a second electrode positioned on the thin film. According to the present disclosure, it is possible to manufacture a skin-attachable vibration sensor that is attached to a user's neck to detect vibration acceleration in user's neck skin, thus exhibiting a uniform and high sensitivity to a user's voice over the frequency range of the human voice. In addition, the sensor sensitively detects a user's voice through neck skin vibrations rather than through air, thus being free from the influence of external noise or wind, and can recognize the user's voice even in a situation where a user's mouth is covered.

IPC Classes  ?

• H04R 1/08 - MouthpiecesAttachments therefor
• H04R 31/00 - Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
• H04R 1/40 - Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by combining a number of identical transducers
• H04R 3/00 - Circuits for transducers
• H04R 7/04 - Plane diaphragms
• H04R 7/16 - Mounting or tensioning of diaphragms or cones
• G10L 25/78 - Detection of presence or absence of voice signals
• H04R 1/14 - Throat mountings for microphones

Abstract

Provided according to one embodiment of the present disclosure is a process for analyzing muscle fatigue via electromyogram measurement by a wearable device, the process comprising the steps of: (a) measuring electromyogram signals by electric signals on a muscle surface of a user, detected at electrodes; (b) obtaining pure electromyogram signals (m[n]) from the measured electromyogram signals; and (c) analyzing muscle fatigue on the basis of the obtained pure electromyogram signals (m[n]), and providing an analysis result to the user.

IPC Classes  ?

• A61B 5/04 - Measuring bioelectric signals of the body or parts thereof
• A61B 5/0488 - Electromyography
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/024 - Measuring pulse rate or heart rate

Abstract

Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.

IPC Classes  ?

• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/263 - Bombardment with wave or particle radiation with high-energy radiation
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form

Abstract

The present invention provides a vibration sensor comprising: a substrate; a first electrode positioned on the substrate; a support part positioned on the first electrode and comprising a cylindrical hollow space; and a diaphragm comprising a thin film positioned on the support part and a second electrode positioned on the thin film. The present invention can manufacture an ultrathin skin-attachable vocal cord microphone which is attached to the neck of a person so as to sense vibration acceleration of the neck skin when the person speaks and thus has constant and high voice recognition sensitivity in a voice frequency domain of the person. Further, the sensor sensitively senses a vibration, is not influenced by external noise or wind, and can sense a voice even when the mouth is covered. The skin-attachable vibration sensor having an ultrathin structure using an organic material has good skin attachability and thus can minimize a vibration signal distortion phenomenon when used on the curved skin, and provides an aesthetic appearance and an excellent wearing feeling on the skin.

IPC Classes  ?

• G01H 11/06 - Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
• H04R 1/08 - MouthpiecesAttachments therefor

Abstract

Disclosed is a method of manufacturing an organic semiconductor thin film, including preparing semiconductor ink containing a solvent, a low-molecular-weight organic semiconductor and a high-molecular-weight organic semiconductor and forming an organic semiconductor thin film vertically phase-separated by applying the semiconductor ink on a substrate through a bar-coating process using a bar. In the bar-coating process of the invention, the semiconductor ink blend is used, and the gap between the substrate and the bar is adjusted, thus controlling vertical phase separation. Also, the speed of the bar, the gap of which is adjusted, is regulated, thus controlling crystal growth, whereby the uniformity of the thin film is improved and thus a high-quality organic semiconductor crystalline thin film having a large area can be manufactured in a continuous process. Also, a flexible organic semiconductor transistor, having high stability and high charge mobility, can be provided using the organic semiconductor thin film.

IPC Classes  ?

• H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
• H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier

Abstract

Disclosed is a thin-film transistor-based pressure sensor including a gate electrode; a gate dielectric layer provided on the gate electrode; a semiconductor layer provided on the gate dielectric layer; and a source electrode and a drain electrode provided on the semiconductor layer, wherein each of the source and drain electrodes has an elastic body that includes: an elastic part having a protrusion; and a conductive part provided on a surface of the elastic part and having a conductive material. According to the pressure sensor and a method of manufacturing the same of the present invention, the elastic body coated with the conductive material is patterned to serve as the source electrode and the drain electrode of the pressure sensor whereby it is possible to drive an active matrix, drive the pressure sensor with low power, and manufacture the pressure sensor through a simple process.

IPC Classes  ?

• H01L 29/84 - Types of semiconductor device controllable by variation of applied mechanical force, e.g. of pressure
• H01L 29/786 - Thin-film transistors
• H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
• H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier

Abstract

Disclosed is a method of manufacturing a surface-modified polymer film, including forming a hydroxyl group (—OH) on the surface of a polymer film by subjecting the polymer film to light irradiation and surface treatment with a photoacid generator. The polymer film can be introduced with a hydroxyl group (—OH) group using a photoacid generator, thereby modifying the surface of the polymer film without damage to the polymer film. Also, an organic electronic device including the surface-modified polymer film can be improved in electrical characteristics and stability.

IPC Classes  ?

• H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
• H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
• B05D 1/18 - Processes for applying liquids or other fluent materials performed by dipping
• C08J 7/14 - Chemical modification with acids, their salts or anhydrides
• C08J 7/12 - Chemical modification
• H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
• H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)

Abstract

Disclosed is a method of producing graphene, which includes bringing a metal catalyst into contact with hydrogen gas (Step a), bringing the metal catalyst in Step a into contact with at least one selected from among a hydrocarbon gas, nitrogen gas, and an inert gas (Step b), and forming graphene on the metal catalyst by bringing the metal catalyst in Step b into contact with hydrogen gas and a hydrocarbon gas (Step c), whereby the number of layers of graphene can be variously controlled as needed, regardless of the initial surface roughness of a metal catalyst layer, and also, the time required to form graphene can be shortened, thus reducing processing costs.

IPC Classes  ?

• C01B 31/04 - Graphite
• H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
• B82Y 40/00 - Manufacture or treatment of nanostructures
• B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

Abstract

Provided is a 3D static RAM core cell having a vertically stacked structure, the static RAM core cell comprising six thin film transistors, each of which has a gate electrode, a source electrode, and a drain electrode, the static RAM core cell comprising: two thin film transistors for switching, which are each connected to a bit line and a word line and select the recording and reading of data; and four thin film transistors for data storage, which are connected to a power supply voltage (Vdd) or a ground voltage (Vss) and allow the recording and reading of data, the static RAM core cell comprising: a first transistor layer comprising two thin film transistors selected from among the six thin film transistors; a second transistor layer which is positioned on the first transistor layer and comprises two thin film transistors selected from among the other four thin film transistors; and a third transistor layer which is positioned on the second transistor layer and comprises the other two thin film transistors, wherein the one or more kinds of electrodes of the first transistor layer and the one or more kinds of electrodes of the second transistor layer are electrically connected, and the one or more kinds of electrodes of the second transistor layer and the one or more kinds of electrodes of the third transistor layer are electrically connected. As such, the 3D static RAM core cell having a vertically stacked structure according to the present invention allows a complex patterning process for forming different types of organic transistors to be omitted during the manufacture of memory elements by disposing the same type of organic transistors on the same plane and vertically stacking same and can improve the degree of integration of a semiconductor circuit by reducing the area taken up by the memory elements.

IPC Classes  ?

• H01L 27/11 - Static random access memory structures
• H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
• H01L 27/28 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof

Abstract

The present invention relates to a flexible substrate lamination body comprising: a flexible substrate; and a base material which is on one surface of the flexible substrate and reduces strain of the flexible substrate. The flexible substrate lamination body of the present invention comprises a base material for reducing surface strain to reduce shearing stress and surface strain of a surface, thereby being able to minimize performance degradation of a device. Further, such flexible substrate lamination body can be applied to various electronic devices having enhanced flex resistance and thereby performance is not degraded after bending.

IPC Classes  ?

• H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions

Abstract

Disclosed is a flexible electronic device having an adhesive function, including an adhesive tape that includes a flexible film and an adhesive layer formed on one side of the flexible film, and an electronic device formed on a remaining side of the flexible film of the adhesive tape. Accordingly, the flexible electronic device of the present invention is transferred on a surface of various flexible materials or materials having a curved surface so as to freely adhere and minimize breakage of the electronic device and maintain performance over a long period of time, even if the substrate is modified or repeatedly bent.

IPC Classes  ?

• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• H01L 29/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor bodies or of electrodes thereof
• H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
• H01L 29/786 - Thin-film transistors
• H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/66 - Types of semiconductor device
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The present invention relates to a graphene laminate comprising: a first graphene layer comprising an electron donating functional group; and a second graphene layer positioned on the first graphene layer and comprising graphene, wherein the second graphene layer is n-doped by the first graphene layer. Therefore, the degree at which graphene is doped can be controlled without a deterioration in the transparency of graphene and the doping effect can last for a long time without a protective layer by doping graphene with a graphene modified with an amino group.

IPC Classes  ?

• B32B 9/00 - Layered products essentially comprising a particular substance not covered by groups
• B32B 9/04 - Layered products essentially comprising a particular substance not covered by groups comprising such substance as the main or only constituent of a layer, next to another layer of a specific substance
• C01B 31/04 - Graphite

Abstract

Disclosed herein is a laminate comprising: a substrate; an organic surface modifying layer disposed on the substrate; and a porous organic semiconductor layer disposed on the surface modifying layer. Onto the substrate, introduction of the organic surface modifying layer having a low surface energy, and optionally the organic intermediate layer having a low glass transition temperature controls the self assembly of the organic semiconductor layer, allowing the porous organic semiconductor layer to have high crystallinity and large crystal grains. Also, provided is a highly efficient chemical sensor comprising the laminate.

IPC Classes  ?

• H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
• G01N 27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
• B32B 3/26 - Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layerLayered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form characterised by a layer with cavities or internal voids
• H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
• B32B 5/16 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer formed of particles, e.g. chips, chopped fibres, powder
• B32B 27/14 - Layered products essentially comprising synthetic resin next to a particulate layer

Abstract

A method of manufacturing graphene, including forming a metal catalytic layer on a substrate (Step a), providing a cover member on the metal catalytic layer of Step a (Step b), and growing graphene on the metal catalytic layer of Step b by performing chemical vapor deposition (Step c), whereby the size of the micro-scale grain boundary on the surface of the metal catalyst can be reduced by simultaneously promoting the aggregation of metal catalytic molecules in a chemical vapor deposition device and preventing the evaporation of the metal catalyst due to the effect of the cover member, ultimately improving the quality of synthesized graphene, including the transparency thereof. Also, a graphene sheet can be grown under various concentrations of carbon source gas, and efficient mass production thereof is possible in a chemical vapor deposition device having a confined space.

IPC Classes  ?

• C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
• C23C 16/26 - Deposition of carbon only
• C01B 31/04 - Graphite
• C23C 16/02 - Pretreatment of the material to be coated
• C01B 32/186 - Preparation by chemical vapour deposition [CVD]

Abstract

Provided is a method for producing graphene, comprising the steps of: bringing a metal catalyst into contact with hydrogen gas (step a); bringing the metal catalyst in step a into contact with at least one selected from among a hydrocarbon gas, a nitrogen gas and an inert gas (step b); and forming graphene on the metal catalyst by bringing the metal catalyst in step b into contact with the hydrogen gas and the hydrocarbon gas (step c), whereby it is possible to diversely control the number of graphene layers depending on need, regardless of the surface roughness of a first metal catalyst layer, and to shorten the time for forming graphene, thereby saving manufacturing costs.

IPC Classes  ?

• C01B 31/04 - Graphite

Abstract

One embodiment of the present invention provides graphene and a method for manufacturing the same. The method for manufacturing graphene of the present invention comprises the steps of: (a) forming a metal catalytic layer on a substrate; (b) introducing a cover member on the metal catalytic layer of step a; and (c) growing graphene on the metal catalytic layer of step b by carrying out chemical vapor deposition. Accordingly, it is possible to improve the quality of synthesized graphene such as the transparency thereof by simultaneously promoting the aggregation of metal catalytic molecules in a chemical vapor deposition device and preventing evaporation of a metal catalyst due to the effect of the cover member, and thereby reducing the size of the micro-scale grain boundary on the surface of the metal catalyst. Furthermore, a graphene sheet growing at various concentrations of a carbon source gas can be synthesized and efficiently mass-manufactured in a limited space of the chemical vapor deposition device.

IPC Classes  ?

• C01B 31/02 - Preparation of carbon; Purification
• C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
• B01J 23/755 - Nickel