Abstract

XX252533 -33 -33 -44 +44 +333 conversion means 6.

IPC Classes  ?

• C01B 21/40 - Preparation by absorption of oxides of nitrogen
• B01D 53/56 - Nitrogen oxides
• B01D 53/78 - Liquid phase processes with gas-liquid contact
• C01C 1/04 - Preparation of ammonia by synthesis

Abstract

In the present invention, in a desorption heating mode in which a space to be air conditioned is heated and moisture adsorbed by an adsorption part (18a) of a refrigerant/air heat exchange part (18) is desorbed, refrigerant circuit switching parts (15a-15e) switch to a refrigerant circuit that causes a refrigerant flowing out from heating parts (12, 121, 30b) to circulate in the order of the refrigerant/air heat exchange part (18), outside air-side pressure reduction parts (14a, 14d), refrigerant/outside air heat exchange parts (16, 19a), and a suction port of a compressor (11). In an inside air adsorption heating mode in which the space to be air conditioned is heated and moisture is adsorbed to the adsorption part (18a), the refrigerant circuit switching parts (15a-15e) switch to a refrigerant circuit that causes the refrigerant flowing out from the heating parts (12, 121, 30b) to bypass the refrigerant/air heat exchange part (18) and circulate in the order of the outside air-side pressure reduction parts (14a, 14d), the refrigerant/outside air heat exchange parts (16, 19a), and the suction port of the compressor (11), and an air blowing part (52) blows inside air to the refrigerant/air heat exchange part (18).

IPC Classes  ?

• B60H 1/22 - Heating, cooling or ventilating devices the heat being derived otherwise than from the propulsion plant
• F24F 11/46 - Improving electric energy efficiency or saving

Abstract

A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ΔT in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ΔT≤10° ° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.

IPC Classes  ?

• C30B 25/10 - Heating of the reaction chamber or the substrate
• C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
• C30B 25/16 - Controlling or regulating
• C30B 29/36 - Carbides

Abstract

Provided are a method for manufacturing a silicon carbide single crystal, which can suppress conversion of threading edge dislocations into prismatic plane dislocations and conversion of the prismatic plane dislocations into basal plane dislocations; and a silicon carbide single crystal ingot and a silicon carbide wafer, in which conversion from threading edge dislocations into prismatic plane dislocations and conversion from the prismatic plane dislocations into basal plane dislocations have been suppressed. A silicon carbide single crystal is grown on the surface of a seed substrate by a gas method so that a temperature gradient in the radial direction of the seed substrate takes a predetermined value or lower during the growth. The area of regions T1 to T4, where regions R1 to R3 of a basal plane whose shear stresses exceed critical resolved shear stress, and regions S1 to S4 of a prismatic plane whose shear stresses exceed critical resolved shear stress overlap, is less than a half of the area of a crystal growth surface. Furthermore, the area of the regions T1 to T4 is smaller than the area of regions V1 to V4 where a region R4 of the basal plane whose shear stress does not exceed the critical resolved shear stress overlaps the regions S1 to S4.

IPC Classes  ?

• C30B 25/16 - Controlling or regulating
• C30B 29/36 - Carbides

Abstract

Provided are a method for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot which ensure a high crystal growth rate and increase the ratio of conversion from basal plane dislocations to threading edge dislocations. The method prepares a seed substrate composed of silicon carbide having an off-angle in a [1-100] direction with respect to a {0001} plane; and grows a silicon carbide single crystal layer on the seed substrate by an HTCVD method, thereby converting basal plane dislocations contained in the seed substrate to threading edge dislocations during crystal growth.

IPC Classes  ?

• C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
• C30B 29/06 - Silicon

Abstract

This method for recovering active material from a power storage apparatus comprises a processing step for processing an electrode, which is included in a power storage apparatus and to which active material has adhered, so that at least a portion of the electrode has a wavy shape.

IPC Classes  ?

• H01M 10/54 - Reclaiming serviceable parts of waste accumulators
• C22B 1/00 - Preliminary treatment of ores or scrap
• C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof

Abstract

This image generation device includes: an image acquisition means that acquires a plurality of captured images obtained by imaging an imaging target provided with a pattern of a known shape from different positions a plurality of times; a conversion amount calculation means that calculates, for each of the captured images, an image conversion amount by which the shape of the image having the pattern of the captured images becomes the known shape; an image conversion means that performs, for each of the captured images, image conversion by the calculated image conversion amount; an alignment means that performs alignment of the plurality of captured images after the image conversion; and an image generation means that generates an objective image on the basis of the plurality of aligned captured images.

IPC Classes  ?

• H04N 5/232 - Devices for controlling television cameras, e.g. remote control
• G06T 3/00 - Geometric image transformations in the plane of the image
• G06T 7/30 - Determination of transform parameters for the alignment of images, i.e. image registration

Abstract

In the present invention, power is generated using a difference in potential formed by the difference in composition between solvents in electrolytes of a negative electrode 3 and a positive electrode 4. By managing the solvents in the electrolytes of the negative electrode 3 and the positive electrode 4, power generation is maintained while eliminating emission of carbon dioxide.

IPC Classes  ?

• H01M 8/02 - Fuel cellsManufacture thereof Details
• H01M 8/04746 - PressureFlow
• H01M 8/18 - Regenerative fuel cells, e.g. redox flow batteries or secondary fuel cells

Abstract

A method and an apparatus for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot, obtaining a silicon carbide single crystal reduced in defects such as threading dislocations, are provided. The method manufactures a silicon carbide single crystal by supplying a raw material gas into a reaction vessel with a seed substrate, and heats the interior to grow a silicon carbide single crystal on the surface of the seed substrate. The method includes growing the silicon carbide single crystal on the seed substrate surface, while controlling the temperature, to perform pair annihilation of threading dislocations or synthesis of the threading dislocations; and a second step of maintaining the temperature inside the reaction vessel in the state of the first predetermined temperature after execution of the first step, to bring the leading ends of the threading dislocations close to the surface of the seed substrate.

IPC Classes  ?

• C30B 29/36 - Carbides
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
• C30B 23/02 - Epitaxial-layer growth

Abstract

An image processing device performs projection conversion that makes an image captured of an object to be recognized closer to a normal image captured from front of the object to be recognized based on a correlation between: a pre-specified plurality of feature ranges dispersed within a range of the object to be recognized; and a plurality of feature ranges designated based on the dispersion in the image.

IPC Classes  ?

• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
• G06K 7/14 - Methods or arrangements for sensing record carriers by electromagnetic radiation, e.g. optical sensingMethods or arrangements for sensing record carriers by corpuscular radiation using light without selection of wavelength, e.g. sensing reflected white light
• G06T 5/80 - Geometric correction
• G06V 10/20 - Image preprocessing
• G06V 10/24 - Aligning, centring, orientation detection or correction of the image

Abstract

An ionic element according to an embodiment includes an ion layer. The ion layer includes a polymer, an electrolyte, and a pair of end faces. The polymer is a base material. The electrolyte includes ions having a multiple bonding property. The ions are chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces.

IPC Classes  ?

• H01G 7/02 - Electrets, i.e. having a permanently-polarised dielectric
• H01G 9/028 - Organic semiconducting electrolytes, e.g. TCNQ
• H01G 11/56 - Solid electrolytes, e.g. gelsAdditives therein
• H01L 29/861 - Diodes
• H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

Provided is a method of diagnosing aging degradation of a polymer insulator, the method being capable of improving the accuracy of diagnosis. In the method of diagnosing the aging degradation of a polymer insulator containing a polymer and a filler, a light emission spectrum is obtained by receiving light emitted when the surface of an insulator to be diagnosed is irradiated with laser light, an intensity ratio of a polymer-derived component to a filler-derived component is obtained from the light emission intensity of the polymer-derived component and the light emission intensity of the filler-derived component in the light emission spectrum, and the aging degradation of the insulator to be diagnosed is diagnosed by comparing said intensity ratio with an intensity ratio of a control sample.

IPC Classes  ?

• G01N 21/71 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited

Abstract

−3 or more.

IPC Classes  ?

• C30B 29/36 - Carbides
• C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
• C01B 32/956 - Silicon carbide

Abstract

Provided is a silicon carbide semiconductor device (60) comprising: an active region (51); and a terminal structure (52) arranged outside the active region (51). The silicon carbide semiconductor device (60) comprises: a second conductive-type semiconductor substrate (1); a second conductive-type first semiconductor layer (2); a first conductive-type second semiconductor layer (4); a second conductive-type first semiconductor region (6); a first conductive-type second semiconductor layer (7); a gate insulating film (9); a gate electrode (10); a first electrode (11); and a second electrode (12). The second semiconductor layer (4) in the terminal structure (52) has an end part (T). Out of electron density and hole density of the end part (T) when being energized, the lesser density is 1×1015/cm3 or less.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/74 - Thyristor-type devices, e.g. having four-zone regenerative action
• H01L 29/861 - Diodes
• H01L 29/868 - PIN diodes

Abstract

This image processing device performs projection conversion which makes an image closer to a normal image that is captured from the front of an object to be recognized on the basis of correlation between a plurality of feature ranges which are pre-specified and dispersed within a range of the object to be recognized and a plurality of feature ranges designated on the basis of dispersion in an image captured of the object to be recognized.

IPC Classes  ?

• G06T 7/32 - Determination of transform parameters for the alignment of images, i.e. image registration using correlation-based methods
• G06T 3/00 - Geometric image transformations in the plane of the image

Abstract

A heavy metal element is added to a SiC single crystal (6) during the growing of the SiC single crystal (6) so that the addition density of the heavy metal element can become 1 × 1015cm-3 or more. The SiC single crystal (6) having this constitution hardly undergoes dislocation by the action of a thermal stress generated during the growth thereof. Therefore, when the SiC single crystal (6) is sliced to produce a wafer and a SiC layer is epitaxially grown on the wafer, dislocation rarely occurs. Due to this constitution, a SiC single crystal which is prevented from the occurrence of dislocation or multiplication can be produced.

IPC Classes  ?

• C30B 29/36 - Carbides
• C30B 25/02 - Epitaxial-layer growth

Abstract

ST at a canister side surface upper portion located above the horizontal plane passing through the center of the canister are monitored, and occurrence of leakage of an inert gas inside the canister is detected when there is a change in a temperature difference between the at least two temperatures.

IPC Classes  ?

• G01M 3/02 - Investigating fluid tightness of structures by using fluid or vacuum
• G01M 3/00 - Investigating fluid tightness of structures
• G01N 25/72 - Investigating presence of flaws
• G21F 5/12 - Closures for containersSealing arrangements
• G21F 5/10 - Heat-removal systems, e.g. using circulating fluid or cooling fins

Abstract

The method for producing a SiC epitaxial wafer according to an embodiment of the present invention includes an epitaxial growing step of feeding an Si-based source gas, a C-based source gas, and a gas having a Cl element onto a surface of a SiC single-crystal substrate and growing an epitaxial layer on the SiC single-crystal substrate, wherein growing conditions in the epitaxial growing step are a pressure of deposition of 30 torr or less, a Cl/Si ratio of 8 to 12, a C/Si ratio of 0.8 to 1.2, and a growth rate of 50 μm/h or faster from the beginning of growth.

IPC Classes  ?

• C30B 29/36 - Carbides
• C23C 16/42 - Silicides
• C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Abstract

According to the present invention: the flow direction of a refrigerant due to a channel switching means 15, and operation of an open state and a restricted state of a first expansion valve 13 and a second expansion valve 22, are controlled; inside-air circulation of outside air is controlled together with individual controlling of latent heat of a fluid in a third heat exchanger 23, a second heat exchanger 12, and a first heat exchanger 11; the temperature and the humidity inside a passenger compartment 3 are regulated; the proportion of inside-air circulation is increased to control the motive power of a compression means 14; and the temperature is adjusted in a comfortable state (a state in which fogging is eliminated).

IPC Classes  ?

• B60H 1/22 - Heating, cooling or ventilating devices the heat being derived otherwise than from the propulsion plant
• B60H 3/00 - Other air-treating devices
• F24F 3/153 - Air-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatmentApparatus specially designed for such systems characterised by the treatment of the air otherwise than by heating and cooling by humidificationAir-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatmentApparatus specially designed for such systems characterised by the treatment of the air otherwise than by heating and cooling by dehumidification with subsequent heating, i.e. with the air, given the required humidity in the central station, passing a heating element to achieve the required temperature
• F25B 29/00 - Combined heating and refrigeration systems, e.g. operating alternately or simultaneously
• F25B 39/00 - EvaporatorsCondensers

Abstract

A SiC epitaxial wafer is provided with a SiC single crystal substrate of which the main surface has an off angle of 0.4° to 5° with respect to (0001) plane and an epitaxial layer which is provided on the SiC single crystal substrate, wherein the epitaxial layer has a basal-plane dislocation density of 0.1/cm2 or less in an area lying between the SiC single crystal substrate to the outer surface and an inside 3C triangular defect density of 0.1/cm2 or less.

IPC Classes  ?

• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• C23C 16/42 - Silicides
• C30B 25/16 - Controlling or regulating
• C30B 29/36 - Carbides
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth

Abstract

A vibration energy harvester includes: a pair of electrodes provided so as to face opposite each other, with at least one of the pair of electrodes allowed to move; and an ion gel provided between the pair of electrodes, which is formed by using an ionic liquid, wherein: as an external vibration causes the electrode to move along a direction in which a distance between the pair of electrodes changes, power is generated through a change in an area of an electric double layer formed on two sides of an interface of each electrode and the ion gel.

IPC Classes  ?

• H02N 1/00 - Electrostatic generators or motors using a solid moving electrostatic charge carrier
• F03G 7/08 - Mechanical-power-producing mechanisms, not otherwise provided for or using energy sources not otherwise provided for recovering energy derived from swinging, rolling, pitching, or like movements, e.g. from the vibrations of a machine
• B81B 5/00 - Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
• H01G 7/02 - Electrets, i.e. having a permanently-polarised dielectric
• H01G 11/08 - Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component
• H01G 11/56 - Solid electrolytes, e.g. gelsAdditives therein

Abstract

[Problem] To provide a film deposition device that can inhibit the infiltration of a gas, suppress the generation of particles resulting from the adhesion of deposited matter, and prevent the generation of crystal defects in the film that is formed. [Solution] A feeding unit 4 is provided with: a first partition 32; a second partition 401 that is disposed at a predetermined interval below the first partition; a third partition 402 that is disposed at a predetermined interval below the second partition; a first passage 431 into which a first gas is introduced, said first passage being disposed between the first partition and the second partition; a second passage 432 into which a second gas is introduced, said second passage being disposed between the second partition and the third partition; a first pipe 411 that communicates with the first passage from the second partition to below the third partition; a second pipe 421 that communicates with the second passage from the third partition to below the third partition, said second pipe being disposed so as to enclose the first pipe; and a protruding part that protrudes from an outer peripheral face 411c of the first pipe to an inner peripheral face 421b of the second pipe, or vice versa, said protruding part being disposed on the outer peripheral face of the first pipe or the inner peripheral face of the second pipe.

IPC Classes  ?

• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

A cooling air amount adjustment device of a concrete cask is provided. The device includes at least one of an air outlet port opening level adjustment mechanism and an air inlet port opening level adjustment mechanism which are adapted to automatically perform adjustment to reduce a flow rate of a cooling air when a temperature of the cooling air at an air outlet port is lower than an adjustment reference temperature, and adjustment to increase the flow rate of the cooling air so as to restore the flow rate of the cooling air when the temperature of the cooling air at the air outlet port is higher than the adjustment reference temperature.

IPC Classes  ?

• G21F 5/10 - Heat-removal systems, e.g. using circulating fluid or cooling fins
• G21C 19/04 - Means for controlling flow of coolant over objects being handledMeans for controlling flow of coolant through channel being serviced
• G21C 19/06 - Means for supporting or storing fuel elements or control elements
• G21F 9/34 - Disposal of solid waste
• G21F 9/36 - Disposal of solid waste by packagingDisposal of solid waste by baling

Abstract

A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a bottom portion of a metallic sealed container. A feeding air temperature of external air passing between the metallic sealed container and a concrete-made storage container is also measured. Presence of leakage of inactive gas is determined by comparing the temperatures or by utilizing a physical amount calculated by using the temperatures.

IPC Classes  ?

• G21F 5/10 - Heat-removal systems, e.g. using circulating fluid or cooling fins
• G01M 3/00 - Investigating fluid tightness of structures
• G21F 5/12 - Closures for containersSealing arrangements

Abstract

A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a top portion of a metallic sealed container, a temperature at a bottom portion of a lid portion of a concrete-made storage container facing the top portion of the metallic sealed container, or a temperature of a member existing between the bottom portion of the lid portion and the top portion of the metallic sealed container. An inner temperature of the lid portion of the concrete-made storage container is also measured. Presence of leakage of inactive gas is estimated by comparing the temperatures.

IPC Classes  ?

• G21F 5/00 - Transportable or portable shielded containers
• G21F 5/012 - Fuel element racks in the containers
• G21F 5/06 - Details of, or accessories to, the containers
• G21C 13/00 - Pressure vesselsContainment vesselsContainment in general
• F25D 3/00 - Devices using other cold materialsDevices using cold-storage bodies
• G01M 3/00 - Investigating fluid tightness of structures
• G01N 25/72 - Investigating presence of flaws

Abstract

In this silicon carbide single crystal, a threading dislocation (20) is present, whereof the dislocation line (21) traverses the c-plane while the Burgers vector (bv) has at least a component in the c-axis direction. Among the threading dislocations, the density is 300/cm2 or less for the threading dislocations where the angle (θ1) formed by the Burgers vector and the direction of the dislocation line is greater than 0° and 40° or less, and the density is 30/cm2 or less for the threading dislocations where the angle is greater than 40°.

IPC Classes  ?

• C30B 29/36 - Carbides
• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• C23C 16/42 - Silicides
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Abstract

a of the body 2. A first compressive stress is applied beforehand to a range L of the body 2 where a tensile residual stress is expected to be generated by the welding of the cover 4, the tensile residual stress is canceled by welding the cover 4 with a compressive residual stress generated in the range L, and then a second compressive stress is applied so as to generate a compressive residual stress over the range L.

IPC Classes  ?

• G21F 5/00 - Transportable or portable shielded containers
• G21F 5/12 - Closures for containersSealing arrangements
• G21F 9/36 - Disposal of solid waste by packagingDisposal of solid waste by baling
• G21F 5/008 - Containers for fuel elements
• B65D 53/06 - Sealings formed by liquid or plastic material
• G21F 7/015 - Room atmosphere, temperature or pressure control devices

Abstract

A vibration power generation element, provided with: a pair of electrodes arranged so as to face each other, at least one of the electrodes being capable of moving; and an ion gel provided so as to be interposed between the electrodes, the ion gel being formed by gelling an ionic liquid. An electrode is caused to move by a vibration from the exterior in a direction such that the spacing between the electrodes changes, whereby the area of an electric double layer formed so as to sandwich the interface between the electrode and the ion gel changes, generating power.

IPC Classes  ?

• H02N 1/00 - Electrostatic generators or motors using a solid moving electrostatic charge carrier
• B81B 5/00 - Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
• H01G 7/02 - Electrets, i.e. having a permanently-polarised dielectric
• H01G 11/08 - Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component
• H01G 11/56 - Solid electrolytes, e.g. gelsAdditives therein

Abstract

A method for manufacturing a SiC epitaxial wafer according to an embodiment of the present invention comprises: separately introducing, into a reaction space for SiC epitaxial growth,a basic N-based gas that includes N atoms in the molecules and is composed of molecules which have neither double bonds nor triple bonds between the N atoms and a Cl-based gas composed of molecules that include Cl atoms in the molecules; and mixing the N-based gas and Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and Cl-based gas.

IPC Classes  ?

• C30B 29/36 - Carbides
• C23C 16/42 - Silicides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Abstract

In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.

IPC Classes  ?

• C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
• C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
• C30B 29/36 - Carbides
• C30B 25/16 - Controlling or regulating
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/32 - Carbides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

3 Pa.

IPC Classes  ?

• H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/66 - Types of semiconductor device
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
• C30B 29/36 - Carbides
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
• H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer

Abstract

A SiC single crystal is grown from a first seed crystal (50a) formed from silicon carbide, and the SiC single crystal is cut to form a base section (51c), a tip section (51a) and a middle section (51b); the middle section (51b) is removed, the base section (51c) and tip section (51a) are joined as a second seed crystal (50b), and from the growth face (52) thereof, a SiC single crystal is grown.

IPC Classes  ?

• C30B 29/36 - Carbides

Abstract

In this SiC diode (20), the impurity concentration of a second semiconductor layer portion (25A) having a thickness of less than 100 nm (for example, 50 nm) changes from a third impurity concentration (for example, 1 × 1020 cm-3) to an acceptor density of 1 × 1019 cm-3, said third impurity concentration being different by one or more orders of magnitude from an acceptor density of 1 × 1019 cm-3 that is a second impurity concentration. A discontinuous growth surface, where the impurity concentration changes abruptly, is formed in the second semiconductor layer portion (25A). This discontinuous growth surface serves as a recombination promoting surface for promoting the recombination of carriers, enabling a switching loss to be reduced. In addition, the carrier injection efficiency into a drift layer (23) is maintained high as compared with the case in which a pn-junction interface is used as the discontinuous growth surface, thereby enabling a steady loss to be prevented from increasing. This provides a bipolar semiconductor device, the switching loss of which can be reduced and the steady loss of which can be prevented from increasing.

IPC Classes  ?

• H01L 29/861 - Diodes
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• H01L 21/331 - Transistors
• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
• H01L 29/73 - Bipolar junction transistors
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/744 - Gate-turn-off devices
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/868 - PIN diodes

Abstract

　A substance identification device (122) provided with: a storage unit (130) that pre-stores the index spectrum of plasma at a plurality of temperatures, the peak ratio of H2 and O2 in a plurality of mixture ratios of air to plasma, and substance identification information in which a substance is associated with the light emission intensity peak ratio or the composition ratio relative to a plurality of decomposition products, or the spectrum shape; a spectrum derivation unit (144) that uses laser-induced breakdown spectroscopy to make a sample (102) into a plasma and derives the substance spectrum thereof; a temperature identification unit (146) that compares the substance spectrum and the index spectrum and identifies the temperature of the plasma of the substance; a mixture ratio identification unit (148) that identifies the mixture ratio on the basis of the peak ratio of H2 and O2 in the substance spectrum; and a substance identification unit (150) that derives the light emission intensity peak ratio or the composition ratio relative to a defined plurality of decomposition products in the substance spectrum, or the spectrum shape of the substance spectrum, refers to the substance identification information, and identifies the substance.

IPC Classes  ?

• G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited

Abstract

In this silicon carbide semiconductor film-forming apparatus, first to third gases are introduced into first to third separated chambers (41-43), respectively, through first to third introduction ports (31-33). The first and second gases are a Si material-containing gas and a C material-containing gas, and the third gas does not contain Si and C. The first and second gases are independently supplied to a growing space through first and second supply paths (41b, 42b) that extend from the first and second separated chambers, respectively. Furthermore, the third gas is introduced between the first and second gases through a third supply path (43b) from the third separated chamber.

IPC Classes  ?

• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• C23C 16/42 - Silicides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C30B 29/36 - Carbides

Abstract

In this production method for a SiC single crystal, a pedestal (9) is disposed inside a heating container (8) configuring a reaction chamber in which a SiC single crystal (20) is grown, a seed crystal (5) is adhered to the pedestal (9), the SiC single crystal is grown on the seed crystal by subjecting a starting-material gas to thermal decomposition in the heating container, the growth rate of the SiC single crystal is compared with a threshold range centred on a target value, if the growth rate is within the threshold range, the rotation speed of the seed crystal is maintained, in cases when the growth rate is greater than an upper-limit value of the threshold range, the rotation speed is maintained or reduced, and in cases when the growth rate is less than a lower-limit value of the threshold range, the rotation speed is increased.

IPC Classes  ?

• C30B 29/36 - Carbides
• C30B 25/16 - Controlling or regulating

Abstract

[Problem] To provide a method to prevent stress corrosion cracking of storage canister and a storage canister capable of generating compressive residual stress on the entire outer surface while in a state where radiation from nuclear fuel is shielded. [Solution] A method to prevent stress corrosion cracking of a storage canister (1) prevents stress corrosion cracking by applying compressive stress in a range where tensile residual stress occurs in a metal body (2) by welding a cover (4) to the top (2a) of the body (2). A first compressive stress is applied, beforehand, to a range (L) of the body (2) where tensile residual stress is expected to be generated by welding the cover (4), the tensile residual stress is canceled by welding the cover (4) while a compressive residual stress is generated in the range (L), and then a second compressive stress is applied to generate a compressive residual stress over the entire range (L).

IPC Classes  ?

• G21C 19/32 - Apparatus for removing radioactive objects or materials from the reactor discharge area, e.g. to a storage placeApparatus for handling radioactive objects or materials within a storage place or removing them therefrom
• G21D 1/00 - Details of nuclear power plant
• G21F 5/00 - Transportable or portable shielded containers
• G21F 9/36 - Disposal of solid waste by packagingDisposal of solid waste by baling

Abstract

In a process for growing a hexagonal single crystal, an off angle is imparted to a hexagonal single crystal, which serves as a base for the growth of the crystal, in a first direction [11-20] relative to a basal plane [0001] that serves as the main crystal growth plane, so that such a cross-sectional shape that the thickness of the crystal is gradually decreased in a step-like manner from a reference line AA' that is parallel to the first direction [11-20] toward second directions [-1100] and [1-100] that respectively extend toward the both sides of the reference line AA' and are perpendicular to the first direction [11-20] is formed in the hexagonal single crystal. In this manner, the dislocation that penetrates in the c-axis direction contained in the hexagonal single crystal can be converted into a defect that is inclined at 40˚ or more in the basal plane direction against the c-axis direction during the growth of the crystal, and the direction of the propagation of the defect can be adjusted to a direction that is included between the opposite direction [-1-120] of the first direction [11-20] and the second directions [-1100] and [1-100], whereby the defect can be eliminated out of the crystal.

IPC Classes  ?

• C30B 29/36 - Carbides

Abstract

[Problem] To provide a semiconductor structure, a semiconductor device, and method for producing the semiconductor structure with which mechanical strength is excellent and it is possible to reduce resistance during conduction of electricity. [Solution] The semiconductor structure of the present invention is at least characterized in having an α-type crystal structure, containing aluminum at an impurity concentration of 1 x 1019 cm-3 or higher, and having a p-type silicon carbide single crystal layer having a thickness of 50 µm or higher. Moreover, the method for producing a semiconductor structure of the present invention is at least characterized in comprising an epitaxial growth step for the introduction of a silicon carbide source and an aluminum source and promoting epitaxial growth of a p-type silicon carbide single crystal layer on top of the bottom layer of silicon carbide single crystals having an α-type crystal structure, wherein the epitaxial growth step is performed under temperature conditions of 1,500 to 1,700ºC and under pressure conditions of 5 x 103 to 25 x 103 Pa.

IPC Classes  ?

• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• C23C 16/42 - Silicides
• C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
• C30B 29/36 - Carbides

Abstract

A molten carbonate fuel cell, which makes a separator unnecessary, cuts down the number of components, and markedly reduces the costs, is provided. In the cell, a cathode, an electrolyte plate holding an electrolyte, and an anode are provided concentrically with a tube body, the electrolyte plate is held by the anode, and the electrolyte plate is sandwiched between the anode and the cathode, so that the cell is constructed without the use of a separator.

IPC Classes  ?

• H01M 8/14 - Fuel cells with fused electrolytes

Abstract

When installing or removing various measurement apparatuses upon infrastructure which is subject to monitoring, support, and/or maintenance, a dynamic infrastructure administration system according to the present invention has related software automatically set within an infrastructure administration system and is capable of rapidly and easily commencing status monitoring. When a sensor (2A) as a measurement apparatus is connected, a measurement apparatus read-in device (5A) transmits as a low-level device the type of measurement apparatus and the objective for connecting the measurement apparatus to a directory server (3). The directory server (3) queries class information and generates an instance, queries inter-class relationships and generates and records a relationship instance, transmits the generated instances to a related device based on an inter-instance relationship, and exchanges infrastructure administration data with the instances based on the inter-instance relationship.

IPC Classes  ?

• G06Q 50/10 - Services
• G06Q 50/06 - Energy or water supply

Abstract

A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

IPC Classes  ?

• C30B 25/10 - Heating of the reaction chamber or the substrate

Abstract

A roadway network generation unit (121) generates a roadway network model which is a model of map data relating to a roadway network. A charging station positioning unit (122) positions a model of a charging station which carries out a charging of an electric vehicle at an arbitrary location upon the generated roadway network model. A charging station re-positioning unit (124) executes an algorithm, treating the roadway network model as a static electric field and the model of the charging station as a charged particle which moves within the static electric field by repulsion, wherein a charged particle moves within the static electric field, which has a boundary condition, and after executing the algorithm, repositions the model of the charging station in the roadway model.

IPC Classes  ?

• G06Q 50/10 - Services
• G06F 19/00 - Digital computing or data processing equipment or methods, specially adapted for specific applications (specially adapted for specific functions G06F 17/00;data processing systems or methods specially adapted for administrative, commercial, financial, managerial, supervisory or forecasting purposes G06Q;healthcare informatics G16H)

Abstract

A system for treating a selenium-containing liquid comprises a concentration measurement means (15) for measuring the peroxodisulfuric acid concentration and tetravalent selenium concentration in a selenium-containing liquid; a setting means (21) for setting the feed amount of divalent manganese on the basis of the concentrations of peroxodisulfuric acid and tetravalent selenium and the reaction rate constant ratio, which is the ratio of the reaction rate constant in the reaction between the divalent manganese and the peroxodisulfuric acid with respect to the reaction rate constant in the reaction between the tetravalent selenium and the peroxodisulfuric acid; and an adding means (14) for adding divalent manganese to the selenium-containing liquid such that the divalent manganese in the selenium-containing liquid is maintained at the abovementioned feed amount of divalent manganese. Oxidation from tetravalent selenium to hexavalent selenium is suppressed by using the addition means to add the divalent manganese to the selenium-containing liquid.

IPC Classes  ?

• C02F 1/58 - Treatment of water, waste water, or sewage by removing specified dissolved compounds
• B01D 53/50 - Sulfur oxides
• B01D 53/77 - Liquid phase processes
• C02F 1/70 - Treatment of water, waste water, or sewage by reduction

Abstract

A deposition apparatus 50 includes a chamber 1 having at its top section a gas inlet 4 for supplying deposition gas 25. Inside chamber 1 is a susceptor 7 on which to place a substrate 6; a heater 8 located below the substrate 6; and a liner 2 for covering the inner walls of the chamber 1. Apparatus 50 deposits a film on the substrate 6 by supplying deposition gas 25 from gas inlet 4 into chamber 1 while heating substrate 6. An upper electric resistance heater cluster 35 is located between the inner walls of the chamber 1 and liner 2 such that the upper heater 35 surrounds the liner 2. The upper heater 35 is divided vertically into electric resistance heaters 36, 37, and 38 which are independently temperature-controlled. The substrate 6 is heated with the use of both heater 8 and the upper heater cluster 35.

IPC Classes  ?

• C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

Disclosed is a slag monitoring device (100) for a coal gasifier, that is equipped with a slag hole camera (11) that observes a slag hole (3) out of which molten slag flows, a water surface camera (12) that observes the condition of the slag flowing out of the slag hole (3) as the slag falls upon the surface (5H) of cooling water (5), a falling sound sensor (13) that observes the sound of the slag falling upon the water surface (5H), and a processing device (20) that assesses the deposit locations of solidified slag on the basis of the area of the opening of the slag hole (3) observed by the slag hole camera (11) and the slag drop lines and drop locations observed by the water surface camera.

IPC Classes  ?

• F27D 3/14 - Charging or discharging liquid or molten material
• C10J 3/46 - Gasification of granular or pulverulent fuels in suspension
• F23J 1/00 - Removing ash, clinker, or slag from combustion chambers
• F23J 1/08 - Liquid slag removal
• F27D 21/00 - Arrangement of monitoring devicesArrangement of safety devices
• F27D 21/02 - Observation or illuminating devices

Abstract

In order to enable the measurement of the salinity and water temperature of a marine surface layer using data obtained by a marine radar, the deviation ( ΔS') between the effect of waves in a standard time period on received power (RSI0') and the effect of waves in a measured time period on received power (RSI m') is estimated; the deviation (Δs') between the effect of waves in the standard time period on received power (RSI0') and the effect of waves in a fluctuating electrical conductivity time period on received power is estimated; the regression function (f(σ)) of the relationship between the received power, wherein the deviation (Δs') has been subtracted from the received power in the fluctuating electrical conductivity time period, and the electrical conductivity (σ) in the fluctuating electrical conductivity time period is estimated; the value of the electrical conductivity (σc) in the measured time period is estimated using RSI0'-RSIm'＝ΔS'+{f(σ0)-f(σc)} (σ0: the electrical conductivity in the standard time period); and practical salinity is calculated.

IPC Classes  ?

• G01N 22/00 - Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
• G01K 1/02 - Means for indicating or recording specially adapted for thermometers
• G01N 33/18 - Water

Abstract

Disclosed is a power conversion device which achieves reductions in switching loss due to a reverse recovery current and heat generation loss. Specifically disclosed is a power conversion device provided with a cascode element (21) configured by electrically connecting a normally-on switching element (4) and a normally-off switching element (5) in series and connecting a gate terminal of the normally-on switching element (4) and a source terminal of the normally-off switching element (5) via a cascode connection diode (7), and a high-speed diode (6) electrically connected in parallel with the cascode element (21) and having a cathode region connected to a positive electrode terminal and an anode region connected to a negative electrode terminal.

IPC Classes  ?

• H02M 7/5387 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
• H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

Abstract

Disclosed are a scanning device for nondestructive inspection and nondestructive inspection equipment which can be adapted easily to the size and shape of a structure to be inspected, and can be attached easily to the structure while attaining compaction and low price. Specifically disclosed is a scanning device (2) for nondestructive inspection wherein a probe (3) used for detection of a defect in an object (P) to be inspected is moved relatively to the test surface of the object (P) to be inspected. The scanning device for nondestructive inspection comprises a rodlike guide element (27) arranged on the object (P) to be inspected and extending along the surface thereof, a pair of wheels (23) which is provided, in the circumferential surface touching the object (P) to be inspected, with an annular groove (23F) that holds the guide element (27) internally, a suction unit (23) which generates a suction force for pressing the wheels (23) to the object (P) to be inspected, and a housing (21) which holds the probe (3) and to which the pair of wheels (23) is attached rotatably about the axis of rotation that extends in the direction intersecting the contact surface of the object (P) to be inspected with the pair of wheels (23).

IPC Classes  ?

• G01N 29/26 - Arrangements for orientation or scanning
• G01N 27/90 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws using eddy currents
• G01N 29/24 - Probes

Abstract

Provided is an antifouling agent which comprises a secondary isocyanocyclohexane compound represented by general formula (1) [wherein R represents an alkyl group]. This antifouling agent is useful for preventing contaminations and damages caused by the adhesion of aquatic pests, such as barnacles, mussels, hydrozoans and bryozoans, to ship bottoms, fishing nets, power plant cooling systems and so on. The aforesaid antifouling agent is comparable or superior to the conventionally employed compounds in antifouling effect and safety, and can be more easily and economically produced.

IPC Classes  ?

• A01N 37/34 - Nitriles
• A01P 17/00 - Pest repellants
• C07C 265/10 - Derivatives of isocyanic acid having isocyanate groups bound to carbon atoms of rings other than six-membered aromatic rings
• C09D 5/16 - Anti-fouling paintsUnderwater paints
• C09D 7/12 - Other additives
• C09D 201/00 - Coating compositions based on unspecified macromolecular compounds

Abstract

Disclosed is a gasification system which is provided with: a coal crushing device (2) for obtaining a coal powder by crushing coals (31); a coal gasification furnace (3) for producing a combustible gas by reacting the coal powder with a gasification agent (36); and a coal powder supply device (4) for supplying the coal powder obtained by the coal crushing device (2) to the coal gasification furnace (3). The gasification system is also provided with: a carbonization device (5) for carbonizing a biomass raw material (32) that is derived from a plant; a crude vinegar collecting device (6) for collecting a crude vinegar that is derived from the biomass raw material by cooling the volatile portions generated by the carbonization device (5); a biomass carbide supply device (7) for supplying a biomass carbide obtained by the carbonization device (5) to the coal crushing device (2); and a crude vinegar supply device (8) for supplying the crude vinegar collected by the crude vinegar collecting device (6) to the coal crushing device (2).

IPC Classes  ?

• C10J 3/58 - Production of gases containing carbon monoxide and hydrogen, e.g. synthesis gas or town gas, from solid carbonaceous materials by partial oxidation processes involving oxygen or steam combined with pre-distillation of the fuel
• C10J 3/00 - Production of gases containing carbon monoxide and hydrogen, e.g. synthesis gas or town gas, from solid carbonaceous materials by partial oxidation processes involving oxygen or steam
• C10J 3/46 - Gasification of granular or pulverulent fuels in suspension

Abstract

A packaged thermoelectric conversion module wherein a pressurizing mechanism or coating with a heat-conductive grease for reducing thermal contact resistance is not required between a thermoelectric conversion module sealed in an airtight container and a heat source. In a packaged thermoelectric conversion module (1) wherein the interior of the airtight container (13) accommodating the thermoelectric conversion module (5) is decompressed or evacuated, the interior of the airtight container (13) is partitioned with a partition plate (7) into two chambers (14, 17). One of the chambers (17) is provided with the thermoelectric conversion module (5) and electrodes (9a, 9b) led out to the outside of the airtight container (13), while a flow path (16) for introducing a heating medium (26 or 25) from an external heating medium supply source and circulating the heating medium between the chamber (14) and the external heating medium supply source is formed in the other chamber (14). While transferring heat to one surfaces of thermoelectric semiconductors (2) by the heating medium (26 or 25) via the partition plate (7), heat is transferred between the other surfaces of thermoelectric semiconductors (2) and an external heat source via the airtight container (13).

IPC Classes  ?

• H01L 35/30 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
• H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means

Abstract

A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.

IPC Classes  ?

• H01L 21/26 - Bombardment with wave or particle radiation
• C30B 31/22 - Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• C30B 29/36 - Carbides
• H01L 29/732 - Vertical transistors
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer

Abstract

Provided is a ground flare (10) capable of reducing low frequency vibration of a chimney (20) or ground flare tower below a threshold level thereby preventing resonance of surrounding structures. In a ground flare where flammable waste gas is burned by burners (11) disposed under the chimney (20) and the lower portion of the chimney (20) and the burners (11) are surrounded by a wind shield (40), low frequency noise level of the ground flare tower comprising the chimney (20) and the windshield (40) has been reduced by at least one of changing the natural frequency of the tower or increasing the number of the towers or implementing a device for absorbing low frequency vibration into the tower.

IPC Classes  ?

• F23G 7/08 - Methods or apparatus, e.g. incinerators, specially adapted for combustion of specific waste or low grade fuels, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases using flares, e.g. in stacks

Abstract

By covering the inner circumferential surface of an outer cylinder with a vapor film, thermal conductivity is reduced and the phenomenon of sudden temperature increases in the cylinder wall of the outer cylinder can be prevented, thereby preventing heat damage to the outer cylinder. Additionally, burner burnout, caused by insufficient cooling resulting from irregularities in cooling efficiency at the burner tip, is also prevented. A tip, which is positioned inside a two-stage entrained-flow bed coal gasification furnace, has a double-walled cylindrical structure with an outer cylinder and an inner cylinder, and is configured so that cooling water to cool the tip is supplied via the inside of the inner cylinder and, after cooling the tip, is returned to the base end via the space formed between the outer cylinder and the inner cylinder, and is additionally configured so that the flow path surface area of the space formed between the outer cylinder and the inner cylinder is less than the flow path surface area formed inside the inner cylinder, thus configured so that a swirling flow along guides formed on the outer circumferential surface of the inner cylinder, and a roughly linear flow in the lengthwise direction of the outer cylinder and the inner cylinder, are imparted to the cooling water that is returning to the base end via the space formed between the outer cylinder and the inner cylinder.

IPC Classes  ?

• F23D 14/78 - Cooling burner parts
• F23D 1/00 - Burners for combustion of pulverulent fuel
• F23D 99/00 - Subject matter not provided for in other groups of this subclass
• F23J 1/00 - Removing ash, clinker, or slag from combustion chambers
• F27D 7/02 - Supplying steam, vapour, gases or liquids
• F27D 9/00 - Cooling of furnaces or of charges therein
• F27D 25/00 - Devices for removing incrustations

Abstract

A discharge flow quantity of a conductive fluid from an electromagnetic pump is simply and accurately measured with a small space limitation.  Specifically, each flow quantity of each electromagnetic pump is suitably measured by an electromagnetic pump unit wherein a plurality of electromagnetic pumps are arranged in parallel in one pump container.  A magnetic sensor, for instance, a magnetic flux density measuring coil (6), is arranged at the vicinity of a discharge port (2) of an electromagnetic pump (1), the magnetic flux density of a magnetic field (4), which is generated in the electromagnetic pump (1) and is pushed out from the discharge port (2) of the electromagnetic pump (1) with a flow of the conductive fluid (5), is measured, and a flow quantity of the electromagnetic pump (1) is measured, based on the relationship between a previously obtained magnetic flux density of the magnetic field (4) pushed out from the discharge port (2) of the electromagnetic pump (1) and the flow quantity of the conductive fluid (5).

IPC Classes  ?

• H02K 44/06 - Induction pumps
• G01F 1/00 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
• G01F 1/56 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using electric or magnetic effects

Abstract

Provided are means which enable both efficient treatment of sludge and reutilization of treated sludge as a resource.  Namely, a sludge treatment process characterized by comprising the step (A) of molding sludge into products having surface-surface distances of 2 to 10mm and the step (B) of bringing the products into contact with liquefied dimethyl ether to extract water from the products; and a sludge treatment system characterized by being provided with a molding machine for molding sludge into products having surface-surface distances of 2 to 10mm and an extraction tank for bringing the products into contact with liquefied dimethyl ether to extract water from the products.

IPC Classes  ?

• C02F 11/12 - Treatment of sludgeDevices therefor by de-watering, drying or thickening

Abstract

It is intended to provide an antifouling coating film wherein an antifouling agent, which is in the form of a monomer, is introduced into a high-molecule hydrogel matrix. Namely, an antifouling coating film that is made of a high-molecule hydrogel and free from the attachment of aquatic organisms, which is an antifouling coating film free from the attachment of aquatic organisms characterized in that the high-molecule hydrogel comprises an antifouling monomer as one of the constituents of the same.

IPC Classes  ?

• C09D 5/16 - Anti-fouling paintsUnderwater paints
• A01N 25/04 - Dispersions or gels
• A01N 47/40 - Biocides, pest repellants or attractants, or plant growth regulators containing organic compounds containing a carbon atom not being member of a ring and having no bond to a carbon or hydrogen atom, e.g. derivatives of carbonic acid the carbon atom having a double or triple bond to nitrogen, e.g. cyanates, cyanamides
• A01P 17/00 - Pest repellants
• B05D 5/00 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
• B63B 59/04 - Preventing hull fouling
• C09D 5/00 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects producedFilling pastes
• C09D 5/14 - Paints containing biocides, e.g. fungicides, insecticides or pesticides
• C09D 7/12 - Other additives
• C09D 133/04 - Homopolymers or copolymers of esters
• C09D 133/26 - Homopolymers or copolymers of acrylamide or methacrylamide

Abstract

An apparatus which comprises: a carbonizer (1) which pyrolyzes a biomass to yield a pyrolysis gas and a carbonization product; a furnace (2) in which the carbonization product supplied from the carbonizer (1) is burned; a closed vessel (3) which is disposed in the furnace (2) and holds therein a carbonate (4) which has been melted by the heat generated by the carbonization product burned in the furnace (2); an introduction pipe (5) disposed so that the pyrolysis gas is introduced into the molten carbonate (4) in the closed vessel (3); and a fuel gas supply pipe (6) disposed so that a fuel gas, which is the pyrolysis gas sent through the introduction pipe (5), passed through the molten carbonate (4), and purified by reaction with the molten carbonate (4), is sent from the closed vessel (3) to the outside of the furnace (2).

IPC Classes  ?

• C10K 1/00 - Purifying combustible gases containing carbon monoxide
• B09B 3/00 - Destroying solid waste or transforming solid waste into something useful or harmless
• C10J 3/00 - Production of gases containing carbon monoxide and hydrogen, e.g. synthesis gas or town gas, from solid carbonaceous materials by partial oxidation processes involving oxygen or steam
• C10K 1/02 - Dust removal
• C10K 1/08 - Purifying combustible gases containing carbon monoxide by washing with liquidsReviving the used wash liquors
• F02C 3/28 - Gas-turbine plants characterised by the use of combustion products as the working fluid using a special fuel, oxidant, or dilution fluid to generate the combustion products the fuel or oxidant being solid or pulverulent, e.g. in slurry or suspension using a separate gas producer for gasifying the fuel before combustion
• F02D 19/02 - Controlling engines characterised by their use of non-liquid fuels, pluralities of fuels, or non-fuel substances added to the combustible mixtures peculiar to engines working with gaseous fuels
• H01M 8/06 - Combination of fuel cells with means for production of reactants or for treatment of residues

Abstract

An organic field-effect transistor generally comprises a source electrode, a drain electrode, an organic semiconductor layer in contact with these electrodes, a gate insulating layer adjacent to the organic semiconductor layer, and a gate electrode in contact with the gate insulating layer. For the gate insulating layer, 旜a substance which is in a liquid form having no content of pastes or thickening agents, and the main constituent thereof is an ionic liquid” is used, thereby 旜a frequency where the capacitance decreases to one-tenth of a capacitance at a modulation frequency of 10Hz in the gate voltage” becomes 10kHz or higher. As a result, an organic field-effect transistor with a low driving voltage, sufficiently high current amplification factor, and a high responsiveness (旜a frequency where the capacitance decreases to one-tenth of the capacitance at the modulation frequency of 10Hz in the gate voltage” is 10kHz or higher) can be provided.

IPC Classes  ?

• H01L 29/786 - Thin-film transistors
• H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
• H01L 51/30 - Selection of materials
• H01L 51/40 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof

Abstract

A working fluid containing CO2 comprised of a molecule with a small ratio of specific heat as a main component is expanded in a gas turbine (4). An exhaust gas having a high temperature can be obtained, even if a pressure changes between the inlet side and the outlet side of the gas turbine (4), by suppressing the lowering of the temperature change. The heat efficiency can be improved without lowering the output by increasing the difference between the temperature of the working fluid at the outlet side of a compressor (2) and the temperature of the exhaust gas at the outlet side of the gas turbine (4), thereby enhancing the regeneration effect.

IPC Classes  ?

• F02C 3/34 - Gas-turbine plants characterised by the use of combustion products as the working fluid with recycling of part of the working fluid, i.e. semi-closed cycles with combustion products in the closed part of the cycle
• F01K 23/10 - Plants characterised by more than one engine delivering power external to the plant, the engines being driven by different fluids the engine cycles being thermally coupled combustion heat from one cycle heating the fluid in another cycle with exhaust fluid of one cycle heating the fluid in another cycle
• F02C 3/28 - Gas-turbine plants characterised by the use of combustion products as the working fluid using a special fuel, oxidant, or dilution fluid to generate the combustion products the fuel or oxidant being solid or pulverulent, e.g. in slurry or suspension using a separate gas producer for gasifying the fuel before combustion
• F02C 3/30 - Adding water, steam or other fluids to the combustible ingredients or to the working fluid before discharge from the turbine
• F02C 6/18 - Plural gas-turbine plantsCombinations of gas-turbine plants with other apparatusAdaptations of gas-turbine plants for special use using the waste heat of gas-turbine plants outside the plants themselves, e.g. gas-turbine power heat plants
• F02C 7/08 - Heating air supply before combustion, e.g. by exhaust gases

Abstract

Provided is an epitaxial SiC single crystal substrate, which includes a SiC single crystal wafer whose main plane is a c-plane or a plane obtained by inclining the c-plane at an inclination angle of more than 0 degree but not more than 10 degrees, and a SiC epitaxial film formed on the main plane of the SiC single crystal wafer. The dislocation row density of penetrating blade-like dislocation rows formed on the SiC epitaxial film is 10 rows/cm2 or less.

IPC Classes  ?

• C30B 29/36 - Carbides
• C23C 16/42 - Silicides
• C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Abstract

The object is to provide: an extract of a red alga belonging to Laurencia sp. with an organic solvent; a compound isolated and identified from the extract; and an agent for preventing the settlement of barnacle, which comprises the extract or the compound. Thus, disclosed is an agent for preventing the settlement of barnacle, which comprises at least one component selected from the group consisting of an extract of a red alga belonging to Laurencia sp. with an organic solvent, laurencin, thyrsiferol, magireol A, omaezallene and hachijojimallene A.

IPC Classes  ?

• A01N 65/00 - Biocides, pest repellants or attractants, or plant growth regulators containing material from algae, lichens, bryophyta, multi-cellular fungi or plants, or extracts thereof
• A01N 25/04 - Dispersions or gels
• A01N 37/02 - Saturated carboxylic acids or thio-analogues thereofDerivatives thereof
• A01N 43/08 - Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having rings with one or more oxygen or sulfur atoms as the only ring hetero atom with one hetero atom five-membered rings with oxygen as the ring hetero atom
• A01N 43/90 - Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having two or more relevant hetero rings, condensed among themselves or with a common carbocyclic ring system
• A01P 17/00 - Pest repellants
• C07D 307/20 - Oxygen atoms
• C07D 493/04 - Ortho-condensed systems

Abstract

A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.

IPC Classes  ?

• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

A dehydration system for water-containing substances which comprises a well for dehydration system having a contact zone for bringing a water-containing substance into contact with dimethyl ether, an injection pipe for dimethyl ether and an injection pipe for a water-containing substance, both of which are each connected to the well and open in the contact zone, an exhaust port for discharging dimethyl ether/water-containing substance after contact which opens approximately at the upper end of the contact zone of the well, and a separator for the separation of dimethyl ether from the resulting water-containing substance which is connected tothe well by the exhaust port.

IPC Classes  ?

• B01D 11/02 - Solvent extraction of solids
• B09B 5/00 - Operations not covered by a single other subclass or by a single other group in this subclass
• B09C 1/00 - Reclamation of contaminated soil
• C02F 11/12 - Treatment of sludgeDevices therefor by de-watering, drying or thickening
• C10L 9/00 - Treating solid fuels to improve their combustion
• F23K 1/00 - Preparation of lump or pulverulent fuel in readiness for delivery to combustion apparatus
• F26B 5/16 - Drying solid materials or objects by processes not involving the application of heat by contact with sorbent bodies, e.g. absorbent mouldDrying solid materials or objects by processes not involving the application of heat by admixture with sorbent materials

Abstract

A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and a SiC semiconductor device fabricated by the method. The method for improving the quality of a SiC layer by eliminating or reducing some carrier trapping centers includes the steps of: (a) carrying out ion implantation of carbon atom interstitials (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. The SiC semiconductor device is fabricated by the method.

IPC Classes  ?

• H01L 31/0312 - Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC

Abstract

A gasification equipment with gasification furnace that realizes maintaining of high cool gas efficiency and suppression of temperature rise of gasification gas and suppression of ash sticking. A portion of CO2 gas separated from an exhaust from power generation plant is recovered and compressed by means of a CO2 compressor (25). The compressed CO2 gas is used for delivery of coal (dust coal). The CO2 gas together with dust coal is fed into a gasification furnace to thereby attain acceleration of the formation of CO by an endothermic reaction between C and CO2 and suppression of any temperature rise within a coal gasification furnace (15). Thus, a gasification gas is obtained.

IPC Classes  ?

• C10J 3/46 - Gasification of granular or pulverulent fuels in suspension
• H01M 8/00 - Fuel cellsManufacture thereof
• H01M 8/06 - Combination of fuel cells with means for production of reactants or for treatment of residues

Abstract

Provided is a mesa-type silicon carbide zener diode which has a large current capacity without concentrating electric field to a mesa end section on a pn junction interface. The silicon carbide zener diode is a bipolar semiconductor device having a mesa structure, and in the bipolar semiconductor device, a first conductivity type silicon carbide conductive layer is formed on a first conductivity type silicon carbide single crystal substrate, and a second conductivity type silicon carbide conductive layer is formed on the first conductivity type silicon carbide conductive layer. When a reverse direction voltage is applied, a depletion layer formed on the junction interface of the first conductivity type silicon carbide conductive layer and the second conductivity type silicon carbide conductive layer does not reach a mesa corner section formed on the first conductivity type silicon carbide conductive layer.

IPC Classes  ?

• H01L 29/866 - Zener diodes
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/861 - Diodes

Abstract

A method of sulfide corrosion prevention by which a base is protected from sulfide corrosion; and a high-temperature member which has excellent resistance to sulfide corrosion. Also provided is a method of repairing a cracked heat-transfer tube which comprises: forming a silicon oxide layer on the surface of the base; applying a titanium-containing coating fluid containing titanium metal or a titanium compound to the silicon oxide layer and thermally oxidizing the coating to form a first titanium oxide layer; forming a carbon layer on the first titanium oxide layer; and applying a titanium-containing coating fluid to the carbon layer and thermally oxidizing the coating to form a second titanium oxide layer, whereby the base is protected or repaired with the silicon oxide layer, first titanium oxide layer, carbon layer, and second titanium oxide layer.

IPC Classes  ?

• C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
• B05D 5/00 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
• C23C 20/08 - Coating with inorganic material, other than metallic material with compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• C23C 28/04 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of inorganic non-metallic material

Abstract

Means for energy saving is provided in the disposal of sewage sludge. That is, there is provided a hydrous matter treating system characterized by including a dehydration vessel designed so as to bring a substance being gaseous in ordinary temperature/ordinary pressure conditions and having been liquefied into contact with a hydrous matter to thereby realize separation into the resultant substance and a liquid phase containing water derived from the hydrous matter; an evaporator for vaporization of the substance being gaseous in ordinary temperature/ordinary pressure conditions from the liquid phase; a separator for separation of the gas of vaporized substance from drainage; a condenser for condensation of the gas into a liquefied matter; two or more external heat sources selected from among atmosphere, sewage, hot drainage and groundwater; an external heat temperature detector capable of detecting the temperature of external heat of each of the external heat sources; and external heat supply destination control means capable of identifying external heat source (A) and external heat source (B) on the basis of the temperature of external heat detected by the external heat temperature detector and controlling the supply destination of external heat of the external heat source (A) to the evaporator while controlling the supply destination of external heat of the external heat source (B) to the condenser.

IPC Classes  ?

• C02F 11/12 - Treatment of sludgeDevices therefor by de-watering, drying or thickening
• C02F 11/00 - Treatment of sludgeDevices therefor

Abstract

Reaction of coal is performed in coal gasification furnace (22) to thereby produce coal gasification gas. The coal gasification gas is cooled by gas cooler (23), and the cooled gas is passed through porous filter (24) into desulfurizer (25) for desulfurization treatment to thereby produce a CO-gas-containing gas as an anode gas. The CO-gas-containing gas is subjected to exothermic reaction into H2 and CO2 by means of shift reactor (26), and the anode gas containing H2 is fed to anode (7) of MCFC2. Accordingly, in the condition of absence of extra heat source and heat exchange source, desired anode gas is obtained from the coal gasification gas, and in the condition of inhibition of heat buildup of MCFC2 and maintaining of performance thereof, consideration is given to reduction of CO2. Thus, there is provided a power generating installation equipped with MCFC2 capable of using a coal gasification gas substantially containing CO gas.

IPC Classes  ?

• H01M 8/06 - Combination of fuel cells with means for production of reactants or for treatment of residues
• H01M 8/04 - Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids

Abstract

The invention aims at providing a means which enables efficient treatment of water-containing substance and by which water-containing substance can be converted into a material reusable as resources. A process for the treatment of water-containing substance, characterized by comprising the contact step (A) of bringing a matter which is gaseous under standard temperature and pressure conditions in the form of a liquid into contact with a water-containing substance, the solid/liquid separation step (B) of subjecting the substance treated in the step (A) to solid/liquid separation to recover a liquid layer, the vaporization/extraction step (C) of extracting at least part of the matter which is gaseous under standard temperature and pressure conditions in the form of a gas from the liquid layer obtained in the step (B), and the liquid/liquid separation step (D) of subjecting the resulting liquid layer obtained the step (C) to liquid/liquid separation to take out a lower layer; and equipment for the treatment of water-containing substance.

IPC Classes  ?

• B01D 12/00 - Displacing liquid, e.g. from wet solids or from dispersions of liquids or from solids in liquids, by means of another liquid
• B01D 5/00 - Condensation of vapoursRecovering volatile solvents by condensation
• B09B 3/00 - Destroying solid waste or transforming solid waste into something useful or harmless
• B09C 1/02 - Extraction using liquids, e.g. washing, leaching
• B09C 1/08 - Reclamation of contaminated soil chemically
• C02F 11/00 - Treatment of sludgeDevices therefor
• C02F 11/12 - Treatment of sludgeDevices therefor by de-watering, drying or thickening

Abstract

Disclosed is a technique for deodorizing a sewage sludge satisfactorily. Specifically disclosed is a method for deodorizing a sewage sludge, which comprises the steps of contacting the sewage sludge with a liquefied product of a substance which is in a gaseous state under ambient temperature/ambient pressure conditions and vaporizing the substance. In the method, the substance which is in a gaseous state under ambient temperature/ambient pressure conditions may be a substance showing a gaseous state at 25˚C and 1 atm. In the method, the substance which is in a gaseous state under ambient temperature/ambient pressure conditions may be a substance selected from dimethyl ether, ethyl methyl ether, formaldehyde, ketene, acetaldehyde, butane and propane or a mixture of two or more of them. Also specifically disclosed is a deodorizing apparatus for achieving the deodorizing method.

IPC Classes  ?

• C02F 11/00 - Treatment of sludgeDevices therefor

Abstract

[PROBLEMS] To provide a bipolar semiconductor device having high zener voltage accuracy within a wide zener voltage range (for instance 10-500V). [MEANS FOR SOLVING PROBLEMS] Provided is a bipolar semiconductor device having a mesa structure. In the bipolar semiconductor device, a first conductivity type silicon carbide single crystal substrate, a first conductivity type silicon carbide conductive layer, a second conductivity type heavily doped layer and a second conductivity type silicon carbide conductive layer are laminated in this order.

IPC Classes  ?

• H01L 29/866 - Zener diodes
• H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/861 - Diodes

Abstract

A bipolar semiconductor device having a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate, in which electrons and holes are recombined during conduction in the silicon carbide epitaxial film and expansion of lamination defect area caused by continuous conduction is suppressed. In an operating method of a bipolar semiconductor device, a current is passed through the SiC bipolar semiconductor device while maintaining the temperature environment at 350°C or above.

IPC Classes  ?

• H01L 29/66 - Types of semiconductor device
• H01L 29/74 - Thyristor-type devices, e.g. having four-zone regenerative action
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/861 - Diodes

Abstract

In a silicon carbide bipolar semiconductor device, it is intended to inhibit generation of stacking fault, and extension of stacking fault area, attributed to continuation of power distribution. At least surface layer (4) of high seed defect density is removed from first-conductivity-type silicon carbide epitaxial film (2) having been grown from the surface of first-conductivity-type silicon carbide single crystal substrate (1) according to chemical vapor phase deposition technique. Thereafter, second-conductivity-type silicon carbide epitaxial film (3) is grown from the surface of silicon carbide epitaxial film (2) devoid of the surface layer (4). Further, after growing of the second-conductivity-type silicon carbide epitaxial film (3), at least surface layer (6) of high seed defect density is removed from the second-conductivity-type silicon carbide epitaxial film (3).

IPC Classes  ?

• H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/74 - Thyristor-type devices, e.g. having four-zone regenerative action
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/861 - Diodes

Abstract

A bipolar semiconductor device having a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate in which electrons and holes are recombined during conduction in the silicon carbide epitaxial film, lamination defect area expanded through current conduction is contracted, and increased forward voltage of the bipolar semiconductor device is recovered. The silicon carbide bipolar semiconductor device, in which lamination defect area is expanded through current conduction and forward voltage is increased, is heated at a temperature of 350°C or above.

IPC Classes  ?

• H01L 29/66 - Types of semiconductor device
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• H01L 29/861 - Diodes

Abstract

It is an object to provide a method for improving the quality of an SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and an SiC semiconductor device fabricated by the method. (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. A semiconductor device according to the invention is fabricated by the method.

IPC Classes  ?

• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

An organic electrolyte battery (10) including positive electrode material (2) and negative electrode material (4) and, interposed therebetween, organic electrolyte (6), wherein positive electrode active material particles (8) as a constituent of the positive electrode have surfaces at least partially coated with attachment (12) with electronic conductance and ionic conductance not easily oxidized even when supplied with oxygen from the positive electrode active material. The above attachment (12) is composed of microparticles of inorganic solid electrolyte with ionic conductance (14) and microparticles of conductive material with electronic conductance (16).

IPC Classes  ?

• H01M 4/04 - Processes of manufacture in general
• H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulatorsProcesses of manufacture thereof
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
• H01M 6/18 - Cells with non-aqueous electrolyte with solid electrolyte

Abstract

[PROBLEMS] To easily and accurately detect a position, a depth, or a height of a damaged portion such as a cracked surface and an corroded portion and a micro cracking near the surface layer of a thick object. [MEANS FOR SOLVING PROBLEMS] An ultrasonic wave (16) is introduced from an oblique direction to an object (6) to be inspected so as to detect diffractive waves (17) generated at the end of a damaged portion (20) in the object (6), above the damaged portion. The position of the end of the damaged portion (20) from a surface (13) of the object (6) is obtained by using the trigonometric measurement based on an all-beam path (Wt) of a component (18) propagating directly above the damaged portion (20) among the diffractive waves, from the incident position via the damaged portion, and an interval (S) between the incident position and the detection position of the ultrasonic wave, or a propagation time difference (tt – ts) between the reception of a surface wave (15) reflecting these relationships and a diffractive wave (18) propagating directly above the damaged portion.

IPC Classes  ?

• G01N 29/44 - Processing the detected response signal

Abstract

One of a plurality of ultrasonic flaw detection methods is selected with a simple operation and executed. A switching circuit (3) is used for arbitrarily switching over an angle probe (1) and a normal probe (2) with respect to a transmitting section (T) and a receiving section (R) of a flaw detector. The switching circuit (3) enables selection of one of an angle flaw detection mode where only the angle probe performs transmission/reception of an ultrasonic beam, a SPOD mode where the angle probe transmits an ultrasonic beam and the normal probe receives the diffracted waves, a flaw detection mode where an angle flaw detection method in which the angle probe transmits an ultrasonic beam and receives the reflected waves and the normal probe receives the diffracted waves and a SPOD method are combined, and a normal flaw detection mode where the normal probe transmits/receives an ultrasonic beam.

IPC Classes  ?

• G01N 29/04 - Analysing solids

Abstract

A method of removing ice, and ice removing system, which irrespective of the form of ice contained or the content thereof, are applicable to various ice-containing materials and attain efficient ice removal in high recovery ratio within a short period of time. There is provided a method of removing ice from an ice-containing material with the use of a liquefied substance, characterized by including the step (1) of bringing into contact with an ice-containing material a substance resulting from liquefaction of a substance being a gas under ordinary temperature ordinary pressure conditions so as to cause the liquefied substance to dissolve theice of the ice-containing material, thereby obtaining a liquefied substance of high water content, and the step (2) of vaporizing the substance being a gas under ordinary temperature ordinary pressure conditions contained in the liquefied substance of high water content to thereby separate the substance in the form of a gas from the water. Further, there is provided a system for removing ice from ice-containing material with the use of the above substance, characterized by including, connected in series, a compressor, condenser, dehydrator, evaporator and separator.

IPC Classes  ?

• B01D 11/02 - Solvent extraction of solids
• F26B 5/00 - Drying solid materials or objects by processes not involving the application of heat

Abstract

Provided is a silicon carbide Schottky junction type semiconductor element, which can control a Schottky barrier height to be at a desired value within a range where a power loss is minimum without increasing an n factor, and uses a Ta electrode as a Schottky electrode. A method for manufacturing such semiconductor element is also provided. In the method for manufacturing the silicon carbide Schottky junction type semiconductor element, Ta is deposited on the crystal plane of an n-type silicon carbide epitaxial layer, which is inclined from a (000-1)C plane within a range of 0°-10°, and then, heat treatment is performed within a temperature range of 300°C-1,200°C, and the Schottky electrode is formed.

IPC Classes  ?

• H01L 29/47 - Schottky barrier electrodes
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
• H01L 29/872 - Schottky diodes

Abstract

A fluid damper which is capable of operating while automatically changing the damping force according to the movement of a piston without installing a sensor detecting the displacement of the piston and a controller controlling the supply of electric power. The fluid damper, in which the damping force is automatically changed according to the movement of the piston, comprises a fluid (8) having magnetism, a piston (2) of magnetic material, a cylinder (3) sealing the fluid (8) with magnetism and storing the piston (2), a piston rod (4) passed through the cylinder (3) and supporting the piston (2), magnetic field generating device (6) installed on the outside of the cylinder (3), first yoke member (5) disposed around the cylinder (3), and second yoke member (7) disposed around the piston rod (4) and on the outside of the cylinder (3). Thereby, a magnetic circuit can be partially formed.

IPC Classes  ?

• F16F 9/53 - Means for adjusting damping characteristics by varying fluid viscosity, e.g. electromagnetically
• F16F 9/20 - Devices with one or more members, e.g. pistons, vanes, moving to and fro in chambers and using throttling effect involving only straight-line movement of the effective parts with a closed cylinder and a piston separating two or more working spaces therein with the piston-rod extending through both ends of the cylinder

Abstract

A SiC bipolar semiconductor device having a mesa shape wherein a first conductivity type SiC drift layer and a second conductivity type SiC charge injection layer are epitaxially grown on the surface of a SiC single crystal substrate. In the SiC bipolar semiconductor device, generation and area increase of lamination defects are suppressed, and increase of a forward voltage is suppressed. Furthermore, withstand voltage characteristics are improved in the status where a reverse voltage is applied. On a mesa wall section or on the mesa wall section and a mesa peripheral section, a conduction deterioration preventing layer is formed for spatially separating the surface from a pn junction interface. In one embodiment, the conduction deterioration preventing layer is composed of a second conductivity type silicon carbide low resistance layer which becomes equipotential when a reverse voltage is applied. In another embodiment, the conduction deterioration preventing layer is composed of a second conductivity type silicon carbide conductive layer, and a metal film which becomes equipotential when a reverse voltage is applied is formed on the surface of the conduction deterioration preventing layer. Furthermore, in another embodiment, the conduction deterioration preventing layer is composed of a high resistance amorphous layer.

IPC Classes  ?

• H01L 29/861 - Diodes
• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Abstract

A method of forming a thick film of oxide superconductor, in which with respect to a Bi2223 thick film formed on a treatment object, without lowering of Jc, the adherence to the treatment object is increased so as to attain an enlargement of the sectional area of the Bi2223 thick film. A mixture of Pb and composite oxide with Bi2212 formulation is applied to a surface of treatment object, and fired to thereby form a first thick film. On this first thick film, there is formed a thick film of oxide superconductor represented by the general formula: (Bi,Pb)2+aSr2Ca2Cu3O2 (provided that -0.1≤a≤0.5).

IPC Classes  ?

• C01G 29/00 - Compounds of bismuth
• C01G 1/00 - Methods of preparing compounds of metals not covered by subclasses , , , , in general
• H01B 12/06 - Films or wires on bases or cores
• H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables

Abstract

An intermediate metal film is provided between a Schottky electrode and a pad electrode. The Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is higher than or equal to the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. The current conducted through a pinhole is thereby suppressed even when the Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is lower than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film.

IPC Classes  ?

• H01L 29/47 - Schottky barrier electrodes
• H01L 29/872 - Schottky diodes

Abstract

Plasma is generated by irradiating fine particles such as nano particles or micro particles with an ultrashort pulse laser beam (15) condensed after being emitted from a laser unit (16), or more preferably, plasma is generated by filaments (14) created in the ultrashort pulse laser beam (15), and the components of fine particles are measured based on the emission spectrum from that plasma.

IPC Classes  ?

• G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited

Abstract

A single coil (1) is formed by a superconducting line wound in a lace track shape. Three (A, B, C) of the coils are coaxially arranged around a center O of a region (2) where a rotary magnetic field is to be generated and another three (X, Y, Z) of the coils are arranged outside the coils (A, B, C). That is, the six coils are arranged in two layers and the coils of the internal layer are shifted from the coils of the external layer by 120 degrees so that the coils of the internal layer and the coils of the external layer stand poles apart from each other and 3-phase AC is applied so that the directions of the magnetic fluxes formed by the external layer coils and the internal layer coils opposing to each other are identical. Thus, it is possible to realize the same magnetic field distribution as the tortoise-shaped magnets of 180-degree arrangement by the lace track shape or cylindrical shape of superconducting magnets.

IPC Classes  ?

• H02K 55/02 - Dynamo-electric machines having windings operating at cryogenic temperatures of the synchronous type
• B22D 11/04 - Continuous casting of metals, i.e. casting in indefinite lengths into open-ended moulds
• B22D 11/115 - Treating the molten metal by using agitating or vibrating means by using magnetic fields
• H01F 6/00 - Superconducting magnetsSuperconducting coils

Abstract

With respect to a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other at current passage within a silicon carbide epitaxial film grown from a surface of silicon carbide single-crystal substrate, defects becoming nuclei of stacking fault that are enlarged by current passage are reduced, thereby suppressing any increase of forward-direction voltage of the bipolar silicon carbide semiconductor device. There is provided a process for producing a bipolar silicon carbide semiconductor device, comprising performing a heat treatment of the device at 300°C or above in the final stage of the process. Preferably, the heat treatment is performed after electrode formation, and thereafter, the obtained bipolar silicon carbide semiconductor device is mounted on a package.

IPC Classes  ?

• H01L 29/861 - Diodes
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• H01L 21/329 - Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes

Abstract

When supplying electric power to a superconducting cable including a superconducting shield covering a superconductive conductor, a phase A of a current generated by a magnetic field leaking from the superconducting shield and a phase B of a current passing through the superconductive conductor are detected, and a phase difference between the phase A and the phase B is obtained so as to determine that a quench has occurred in the case where a difference between a reference phase difference and the obtained current phase difference exceeds a threshold.

IPC Classes  ?

• G01N 27/00 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means

Abstract

A large human activity such as waking up and a weak activity such as breathing and pulsing can be detected by a single device with high accuracy, whereby an organic activity monitoring system can be reduced in costs and improved in detection accuracy. Specifically, a method of monitoring the presence/absence of a human action and an organic activity in a living environment involving sleeping using a bed, bedding, a pad, and a tatami mat, wherein an optical fiber type flat-body sensor comprising an optical fiber fixed to or mixed in a flat body such as sheets of fabric is laid or place over, a light is introduced into the optical fiber from a light source, a change in the polarization condition of light propagating through the optical fiber, produced by a change in the shape of the optical fiber type flat-body sensor that is caused by a human action or organic activity, is detected by a polarization variation measuring device, and human activity or movement is judged by the detected value of the polarization variation.

IPC Classes  ?

• A61B 5/11 - Measuring movement of the entire body or parts thereof, e.g. head or hand tremor or mobility of a limb
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61G 7/05 - Parts, details or accessories of beds
• G01L 1/24 - Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis
• G01M 11/00 - Testing of optical apparatusTesting structures by optical methods not otherwise provided for
• A61G 12/00 - Accommodation for nursing, e.g. in hospitals, not covered by groups , e.g. trolleys for transport of medicaments or foodPrescription lists

Abstract

A gas hydrate is produced by microparticulating a liquid guest molecule into a microparticle smaller than a narrow space in the strata, dispersing the microparticle in water to give an emulsion, and injecting the emulsion into the narrow space under such temperature/pressure conditions that the guest molecule can be converted into a hydrate, thereby dispersing the guest molecule uniformly in the narrow space in the strata and forming a gas hydrate.

IPC Classes  ?

• C10L 3/06 - Natural gasSynthetic natural gas obtained by processes not covered by , or
• B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
• C07B 63/02 - PurificationSeparation specially adapted for the purpose of recovering organic compoundsStabilisationUse of additives by treatment giving rise to a chemical modification
• C07C 5/00 - Preparation of hydrocarbons from hydrocarbons containing the same number of carbon atoms
• C07C 7/20 - Use of additives, e.g. for stabilisation
• C07C 9/04 - Methane

Abstract

A multifunctional material having a carbon-doped titanium oxide layer, which has carbon doped in the state of Ti—C bonds, is excellent in durability (high hardness, scratch resistance, wear resistance, chemical resistance, heat resistance) and functions as a visible light responding photocatalyst, is provided. The multifunctional material of the present invention is obtained, for example, by heat-treating the surface of a substrate, which has at least a surface layer comprising titanium, a titanium alloy, a titanium alloy oxide, or titanium oxide, in a combustion gas atmosphere of a gas consisting essentially of a hydrocarbon such that the surface temperature of the substrate is 900 to 1,500° C.; or by directly striking a combustion flame of a gas consisting essentially of a hydrocarbon, against the surface of the substrate for heat treatment such that the surface temperature of the substrate is 900 to 1,500° C.

IPC Classes  ?

• B32B 9/00 - Layered products essentially comprising a particular substance not covered by groups

Abstract

An electromagnetic agitator includes a vessel (2) for containing a conductive material in a molten state such as a molten metal (1), an axial direction shift magnetic field generation coil (3) for generating magnetic lines of force (15) in the vessel axial direction outside the vessel (2) for the molten metal (1) contained in the vessel, and a stripe-shaped magnetic plate (4) arranged between the coil (3) and the vessel (2). In region (10), electromagnetic force in the axial direction is formed for the molten metal in the vessel by the coil (3). In a portion (11), no magnetic field comes into the vessel (2) locally by the magnetic plate (4). Thus, pressure gradient in the circumferential direction is created. The axial direction shift magnetic field generation coil (3) alone generates an axial direction movement and a rotation movement superimposed in the molten metal (1) by the axial direction electromagnetic force and the pressure gradient in the circumferential direction, thereby performing agitation.

IPC Classes  ?

• B22D 27/02 - Use of electric or magnetic effects
• C21C 7/00 - Treating molten ferrous alloys, e.g. steel, not covered by groups
• C22B 9/02 - Refining by liquating, filtering, centrifuging, distilling or supersonic wave action
• F27D 27/00 - Stirring devices for molten material
• B01F 13/08 - Magnetic mixers
• B22D 11/115 - Treating the molten metal by using agitating or vibrating means by using magnetic fields

Abstract

An apparatus comprising at least vessel (2) for stocking conductive liquid (1) containing impurities; electromagnetic force generator (3) for generating electromagnetic force (F) capable of circulating the conductive liquid (1) in the conductive liquid (1); and discharging unit (4) for discharging nonmetallic impurities and deemed nonmetallic impurities (21a,21b) accumulated in low-pressure region (1a) by a pressure difference in conductive liquid (1) induced by the electromagnetic force (F), so that by the electromagnetic force (F), any nonmetallic impurities (21a) and deemed nonmetallic impurities (21b) are driven to the low-pressure region (1a), for example, liquid surface and separated.

IPC Classes  ?

• B01D 43/00 - Separating particles from liquids, or liquids from solids, otherwise than by sedimentation or filtration
• B03C 1/00 - Magnetic separation
• B03C 1/02 - Magnetic separation acting directly on the substance being separated
• C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
• C22B 21/06 - Refining

Abstract

Measurement of the flaw height of a thick stainless steel welded portion difficult to apply the TOFD method is performed conveniently and precisely in a short time by a tip-echo technique while suppressing variations with inspectors. An ultrasonic wave (21) is emitted from a transmission probe (1) to a flaw (24) in an object under inspection (20) from an oblique direction and a diffracted wave is generated at the end (25) of the flaw (24). A diffracted wave (22) propagating directly above the flaw (24) and a diffracted wave (23) propagating above the flaw after reflecting from the rear surface (27) are received by a receiving probe (2) above the flaw (24). The height position from the rear surface (27) at the end of the flaw (24) is measured from the difference between the propagation times.

IPC Classes  ?

• G01N 29/04 - Analysing solids

Abstract

Without the use of pump and control unit, etc., a substance needed for microbial action is fed to thereby realize controlling of the activity thereof. Microbial activity controlling substance (3) is charged into container (4) of hermetically sealed structure having nonporous membrane (2) provided at at least part thereof, and the microbial activity controlling substance (3) is fed around the container (4) through the region of nonporous membrane (2) of the container (4) at a rate governed by the molecular permeation performance of the nonporous membrane (2) to thereby control the microbial activity around the container. The microbial activity controlling substance (3) consists of at least one member selected from among microbial energy source providing substance functioning as an electron donor, acidic substance, basic substance, inorganic salts, oxygen releasing substance and oxygen absorbing substance, with the proviso that acidic substance/basic substance and oxygen releasing substance/oxygen absorbing substance combinations are excluded.

IPC Classes  ?

• C02F 3/34 - Biological treatment of water, waste water, or sewage characterised by the microorganisms used
• C02F 3/00 - Biological treatment of water, waste water, or sewage
• C02F 3/10 - PackingsFillingsGrids

Abstract

A system and a process for removing effectively mercury components contained in a gas in a slight amount which are employed in wet gas refining of a gas produced by gasification of coal or heavy oil or in petroleum refining. Specifically, a mercury removal system for wet gas refining comprising a water washing column for transferring mercury components contained in a subject gas introduced thereto to an absorbent fluid and a flash drum (10) for flashing the absorbent fluid discharged from the water washing column to separate the fluid into a gas component and an effluent, which system is provided with an oxidation means (1) of adding an oxidizing agent to the absorbent fluid in the stage before the flash drum (10) and an effluent treatment means (13) of subjecting the effluent to coagulating sedimentation to discharge the mercury components contained in the effluent as a part of sludge in the stage after the flash drum (10); and a process for the removal of mercury with the system.

IPC Classes  ?

• C10K 1/10 - Purifying combustible gases containing carbon monoxide by washing with liquidsReviving the used wash liquors with aqueous liquids
• B01D 53/64 - Heavy metals or compounds thereof, e.g. mercury
• C10K 1/14 - Purifying combustible gases containing carbon monoxide by washing with liquidsReviving the used wash liquors with aqueous liquids alkaline-reacting organic
• B01D 19/00 - Degasification of liquids
• C02F 1/20 - Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
• C02F 1/52 - Treatment of water, waste water, or sewage by flocculation or precipitation of suspended impurities
• C02F 1/72 - Treatment of water, waste water, or sewage by oxidation
• C02F 1/76 - Treatment of water, waste water, or sewage by oxidation with halogens or compounds of halogens

Abstract

A process for producing a multifunctional material which has high photocatalytic activity and can easily adsorb even VOCs. The process further produces a multifunctional material having a high film hardness and excellent in heat resistance, corrosion resistance, unsusceptibility to peeling, and wearing resistance. The process comprises: heating a surface of a base having a surface layer made of titanium, titanium oxide, a titanium alloy, or a titanium alloy oxide by applying a combustion flame to the surface so as to result in a surface layer temperature of 600°C or higher or heating the base surface in an oxygenous gas atmosphere so as to result in a surface layer temperature of 600°C or higher to thereby form in an inner part of the surface layer a layer bristling with fine columns made of titanium oxide or a titanium alloy oxide; and then cleaving the layer bristling with the fine columns in a direction parallel to the surface layer. Thus, the following are obtained: a member comprising a base having, in at least part of the surfaces thereof, an exposed layer bristling with fine columns made of titanium oxide or a titanium alloy oxide; and a member comprising a thin film, a projection part formed on the thin film and comprising many continuous narrow-width projections made of titanium oxide or a titanium alloy oxide, and exposed fine columns with which an area over the projection part bristles.

IPC Classes  ?

• C22F 1/18 - High-melting or refractory metals or alloys based thereon
• B01J 21/06 - Silicon, titanium, zirconium or hafniumOxides or hydroxides thereof
• B01J 35/02 - Solids
• B01J 37/02 - Impregnation, coating or precipitation
• C22C 14/00 - Alloys based on titanium