Abrégé

A method and an apparatus for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot, obtaining a silicon carbide single crystal reduced in defects such as threading dislocations, are provided. The method manufactures a silicon carbide single crystal by supplying a raw material gas into a reaction vessel with a seed substrate, and heats the interior to grow a silicon carbide single crystal on the surface of the seed substrate. The method includes growing the silicon carbide single crystal on the seed substrate surface, while controlling the temperature, to perform pair annihilation of threading dislocations or synthesis of the threading dislocations; and a second step of maintaining the temperature inside the reaction vessel in the state of the first predetermined temperature after execution of the first step, to bring the leading ends of the threading dislocations close to the surface of the seed substrate.

Classes IPC  ?

• C30B 29/36 - Carbures
• C01B 32/956 - Carbure de silicium
• C30B 23/02 - Croissance d'une couche épitaxiale
• C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
• H10D 62/50 - Défectuosités physiques

Abrégé

A method for recovering an active material from a power storage device includes a processing step of processing at least a part of an electrode of a power source device including the electrode to which an active material adheres, such that the part becomes a corrugated shape.

Classes IPC  ?

• H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
• C22B 1/00 - Traitement préliminaire de minerais ou de débris ou déchets métalliques
• C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p. ex. des rognures, pour produire des métaux non ferreux ou leurs composés

Abrégé

Provided is a compound which is synthesized using an amino acid that can be easily procured in the marketplace and used industrially, has activity for inhibiting adhesion of fouling present in sea water, and has low toxicity. The present invention relates to: a dipeptide containing a proline residue which is represented by formula (1), or a tripeptide containing a proline residue and a phenylalanine residue [in the formula, R13-103-10 hydrocarbon group, R2and R31-81-8 hydrocarbon group or the like, and R41-61-6 hydrocarbon group or the like]; and a composition for inhibiting adhesion of marine fouling, which contains this compound.

Classes IPC  ?

• C07K 5/097 - Tripeptides le premier amino-acide étant hétérocyclique, p. ex. Pro, His, Trp, p. ex. thyrolibérine, mélanostatine
• A01N 43/36 - Biocides, produits repoussant ou attirant les animaux nuisibles, ou régulateurs de croissance des végétaux, contenant des composés hétérocycliques comportant des cycles avec un atome d'azote comme unique hétéro-atome du cycle des cycles à cinq chaînons
• A01P 7/00 - Arthropodicides
• A01P 9/00 - Molluscicides
• C07K 5/078 - Dipeptides le premier amino-acide étant hétérocyclique, p. ex. Pro, His, Trp

Abrégé

XX252533 -33 -33 -44 +44 +333 conversion means 6.

Classes IPC  ?

• C01B 21/40 - Préparation par absorption d'oxydes d'azote
• B01D 53/56 - Oxydes d'azote
• B01D 53/78 - Procédés en phase liquide avec un contact gaz-liquide
• C01C 1/04 - Préparation d'ammoniac par synthèse

Abrégé

In the present invention, in a desorption heating mode in which a space to be air conditioned is heated and moisture adsorbed by an adsorption part (18a) of a refrigerant/air heat exchange part (18) is desorbed, refrigerant circuit switching parts (15a-15e) switch to a refrigerant circuit that causes a refrigerant flowing out from heating parts (12, 121, 30b) to circulate in the order of the refrigerant/air heat exchange part (18), outside air-side pressure reduction parts (14a, 14d), refrigerant/outside air heat exchange parts (16, 19a), and a suction port of a compressor (11). In an inside air adsorption heating mode in which the space to be air conditioned is heated and moisture is adsorbed to the adsorption part (18a), the refrigerant circuit switching parts (15a-15e) switch to a refrigerant circuit that causes the refrigerant flowing out from the heating parts (12, 121, 30b) to bypass the refrigerant/air heat exchange part (18) and circulate in the order of the outside air-side pressure reduction parts (14a, 14d), the refrigerant/outside air heat exchange parts (16, 19a), and the suction port of the compressor (11), and an air blowing part (52) blows inside air to the refrigerant/air heat exchange part (18).

Classes IPC  ?

• B60H 1/22 - Dispositifs de chauffage, de refroidissement ou de ventilation la chaleur étant prélevée autrement que de l'installation de propulsion
• F24F 11/46 - Amélioration de l’efficacité électrique ou économie d’énergie électrique

Abrégé

A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ΔT in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ΔT≤10° ° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.

Classes IPC  ?

• C30B 25/10 - Chauffage de l'enceinte de réaction ou du substrat
• C30B 25/14 - Moyens d'introduction et d'évacuation des gazModification du courant des gaz réactifs
• C30B 25/16 - Commande ou régulation
• C30B 29/36 - Carbures

Abrégé

Provided are a method for manufacturing a silicon carbide single crystal, which can suppress conversion of threading edge dislocations into prismatic plane dislocations and conversion of the prismatic plane dislocations into basal plane dislocations; and a silicon carbide single crystal ingot and a silicon carbide wafer, in which conversion from threading edge dislocations into prismatic plane dislocations and conversion from the prismatic plane dislocations into basal plane dislocations have been suppressed. A silicon carbide single crystal is grown on the surface of a seed substrate by a gas method so that a temperature gradient in the radial direction of the seed substrate takes a predetermined value or lower during the growth. The area of regions T1 to T4, where regions R1 to R3 of a basal plane whose shear stresses exceed critical resolved shear stress, and regions S1 to S4 of a prismatic plane whose shear stresses exceed critical resolved shear stress overlap, is less than a half of the area of a crystal growth surface. Furthermore, the area of the regions T1 to T4 is smaller than the area of regions V1 to V4 where a region R4 of the basal plane whose shear stress does not exceed the critical resolved shear stress overlaps the regions S1 to S4.

Classes IPC  ?

• C30B 25/16 - Commande ou régulation
• C30B 29/36 - Carbures

Abrégé

Provided are a method for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot which ensure a high crystal growth rate and increase the ratio of conversion from basal plane dislocations to threading edge dislocations. The method prepares a seed substrate composed of silicon carbide having an off-angle in a [1-100] direction with respect to a {0001} plane; and grows a silicon carbide single crystal layer on the seed substrate by an HTCVD method, thereby converting basal plane dislocations contained in the seed substrate to threading edge dislocations during crystal growth.

Classes IPC  ?

• C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
• C30B 29/06 - Silicium

Abrégé

This method for recovering active material from a power storage apparatus comprises a processing step for processing an electrode, which is included in a power storage apparatus and to which active material has adhered, so that at least a portion of the electrode has a wavy shape.

Classes IPC  ?

• H01M 10/54 - Récupération des parties utiles des accumulateurs usagés
• C22B 1/00 - Traitement préliminaire de minerais ou de débris ou déchets métalliques
• C22B 7/00 - Mise en œuvre de matériaux autres que des minerais, p. ex. des rognures, pour produire des métaux non ferreux ou leurs composés

Abrégé

This image generation device includes: an image acquisition means that acquires a plurality of captured images obtained by imaging an imaging target provided with a pattern of a known shape from different positions a plurality of times; a conversion amount calculation means that calculates, for each of the captured images, an image conversion amount by which the shape of the image having the pattern of the captured images becomes the known shape; an image conversion means that performs, for each of the captured images, image conversion by the calculated image conversion amount; an alignment means that performs alignment of the plurality of captured images after the image conversion; and an image generation means that generates an objective image on the basis of the plurality of aligned captured images.

Classes IPC  ?

• H04N 5/232 - Dispositifs pour la commande des caméras de télévision, p.ex. commande à distance
• G06T 3/00 - Transformations géométriques de l'image dans le plan de l'image
• G06T 7/30 - Détermination des paramètres de transformation pour l'alignement des images, c.-à-d. recalage des images

Abrégé

In the present invention, power is generated using a difference in potential formed by the difference in composition between solvents in electrolytes of a negative electrode 3 and a positive electrode 4. By managing the solvents in the electrolytes of the negative electrode 3 and the positive electrode 4, power generation is maintained while eliminating emission of carbon dioxide.

Classes IPC  ?

• H01M 8/02 - Éléments à combustibleLeur fabrication Détails
• H01M 8/04746 - PressionDébit
• H01M 8/18 - Éléments à combustible à régénération, p. ex. batteries à flux REDOX ou éléments à combustible secondaires

Abrégé

A method and an apparatus for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot, obtaining a silicon carbide single crystal reduced in defects such as threading dislocations, are provided. The method manufactures a silicon carbide single crystal by supplying a raw material gas into a reaction vessel with a seed substrate, and heats the interior to grow a silicon carbide single crystal on the surface of the seed substrate. The method includes growing the silicon carbide single crystal on the seed substrate surface, while controlling the temperature, to perform pair annihilation of threading dislocations or synthesis of the threading dislocations; and a second step of maintaining the temperature inside the reaction vessel in the state of the first predetermined temperature after execution of the first step, to bring the leading ends of the threading dislocations close to the surface of the seed substrate.

Classes IPC  ?

• C30B 29/36 - Carbures
• C01B 32/956 - Carbure de silicium
• C30B 23/02 - Croissance d'une couche épitaxiale
• C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
• H01L 29/30 - Corps semi-conducteurs ayant des surfaces polies ou rugueuses

Abrégé

An image processing device performs projection conversion that makes an image captured of an object to be recognized closer to a normal image captured from front of the object to be recognized based on a correlation between: a pre-specified plurality of feature ranges dispersed within a range of the object to be recognized; and a plurality of feature ranges designated based on the dispersion in the image.

Classes IPC  ?

• G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
• G06K 7/14 - Méthodes ou dispositions pour la lecture de supports d'enregistrement par radiation électromagnétique, p. ex. lecture optiqueMéthodes ou dispositions pour la lecture de supports d'enregistrement par radiation corpusculaire utilisant la lumière sans sélection des longueurs d'onde, p. ex. lecture de la lumière blanche réfléchie
• G06T 5/80 - Correction géométrique
• G06V 10/20 - Prétraitement de l’image
• G06V 10/24 - Alignement, centrage, détection de l’orientation ou correction de l’image

Abrégé

An ionic element according to an embodiment includes an ion layer. The ion layer includes a polymer, an electrolyte, and a pair of end faces. The polymer is a base material. The electrolyte includes ions having a multiple bonding property. The ions are chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces.

Classes IPC  ?

• H01G 7/02 - Électrets, c.-à-d. ayant un diélectrique polarisé en permanence
• H01G 9/028 - Électrolytes organiques semi-conducteurs, p. ex. TCNQ
• H01G 11/56 - Électrolytes solides, p. ex. gelsAdditifs pour ceux-ci
• H01L 29/861 - Diodes
• H01L 23/29 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par le matériau
• H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition

Abrégé

Provided is a method of diagnosing aging degradation of a polymer insulator, the method being capable of improving the accuracy of diagnosis. In the method of diagnosing the aging degradation of a polymer insulator containing a polymer and a filler, a light emission spectrum is obtained by receiving light emitted when the surface of an insulator to be diagnosed is irradiated with laser light, an intensity ratio of a polymer-derived component to a filler-derived component is obtained from the light emission intensity of the polymer-derived component and the light emission intensity of the filler-derived component in the light emission spectrum, and the aging degradation of the insulator to be diagnosed is diagnosed by comparing said intensity ratio with an intensity ratio of a control sample.

Classes IPC  ?

• G01N 21/71 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité thermiquement

Abrégé

−3 or more.

Classes IPC  ?

• C30B 29/36 - Carbures
• C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
• C01B 32/956 - Carbure de silicium

Abrégé

Provided is a silicon carbide semiconductor device (60) comprising: an active region (51); and a terminal structure (52) arranged outside the active region (51). The silicon carbide semiconductor device (60) comprises: a second conductive-type semiconductor substrate (1); a second conductive-type first semiconductor layer (2); a first conductive-type second semiconductor layer (4); a second conductive-type first semiconductor region (6); a first conductive-type second semiconductor layer (7); a gate insulating film (9); a gate electrode (10); a first electrode (11); and a second electrode (12). The second semiconductor layer (4) in the terminal structure (52) has an end part (T). Out of electron density and hole density of the end part (T) when being energized, the lesser density is 1×1015/cm3 or less.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
• H01L 21/336 - Transistors à effet de champ à grille isolée
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/12 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués
• H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
• H01L 29/74 - Dispositifs du type thyristor, p.ex. avec un fonctionnement par régénération à quatre zones
• H01L 29/861 - Diodes
• H01L 29/868 - Diodes PIN

Abrégé

This image processing device performs projection conversion which makes an image closer to a normal image that is captured from the front of an object to be recognized on the basis of correlation between a plurality of feature ranges which are pre-specified and dispersed within a range of the object to be recognized and a plurality of feature ranges designated on the basis of dispersion in an image captured of the object to be recognized.

Classes IPC  ?

• G06T 7/32 - Détermination des paramètres de transformation pour l'alignement des images, c.-à-d. recalage des images utilisant des procédés basés sur la corrélation
• G06T 3/00 - Transformations géométriques de l'image dans le plan de l'image

Abrégé

A heavy metal element is added to a SiC single crystal (6) during the growing of the SiC single crystal (6) so that the addition density of the heavy metal element can become 1 × 1015cm-3 or more. The SiC single crystal (6) having this constitution hardly undergoes dislocation by the action of a thermal stress generated during the growth thereof. Therefore, when the SiC single crystal (6) is sliced to produce a wafer and a SiC layer is epitaxially grown on the wafer, dislocation rarely occurs. Due to this constitution, a SiC single crystal which is prevented from the occurrence of dislocation or multiplication can be produced.

Classes IPC  ?

• C30B 29/36 - Carbures
• C30B 25/02 - Croissance d'une couche épitaxiale

Abrégé

ST at a canister side surface upper portion located above the horizontal plane passing through the center of the canister are monitored, and occurrence of leakage of an inert gas inside the canister is detected when there is a change in a temperature difference between the at least two temperatures.

Classes IPC  ?

• G01M 3/02 - Examen de l'étanchéité des structures ou ouvrages vis-à-vis d'un fluide par utilisation d'un fluide ou en faisant le vide
• G01M 3/00 - Examen de l'étanchéité des structures ou ouvrages vis-à-vis d'un fluide
• G01N 25/72 - Recherche de la présence de criques
• G21F 5/12 - Dispositifs obturateurs pour récipientsDispositions pour leur étanchéité
• G21F 5/10 - Dispositifs d'évacuation de chaleur spécialement adaptés à ces récipients, p. ex. utilisant une circulation de fluide ou des ailettes de refroidissement

Abrégé

The method for producing a SiC epitaxial wafer according to an embodiment of the present invention includes an epitaxial growing step of feeding an Si-based source gas, a C-based source gas, and a gas having a Cl element onto a surface of a SiC single-crystal substrate and growing an epitaxial layer on the SiC single-crystal substrate, wherein growing conditions in the epitaxial growing step are a pressure of deposition of 30 torr or less, a Cl/Si ratio of 8 to 12, a C/Si ratio of 0.8 to 1.2, and a growth rate of 50 μm/h or faster from the beginning of growth.

Classes IPC  ?

• C30B 29/36 - Carbures
• C23C 16/42 - Siliciures
• C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
• H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique

Abrégé

According to the present invention: the flow direction of a refrigerant due to a channel switching means 15, and operation of an open state and a restricted state of a first expansion valve 13 and a second expansion valve 22, are controlled; inside-air circulation of outside air is controlled together with individual controlling of latent heat of a fluid in a third heat exchanger 23, a second heat exchanger 12, and a first heat exchanger 11; the temperature and the humidity inside a passenger compartment 3 are regulated; the proportion of inside-air circulation is increased to control the motive power of a compression means 14; and the temperature is adjusted in a comfortable state (a state in which fogging is eliminated).

Classes IPC  ?

• B60H 1/22 - Dispositifs de chauffage, de refroidissement ou de ventilation la chaleur étant prélevée autrement que de l'installation de propulsion
• B60H 3/00 - Autres dispositifs de traitement de l'air
• F24F 3/153 - Systèmes de conditionnement d'air dans lesquels l'air conditionné primaire est fourni par une ou plusieurs stations centrales aux blocs de distribution situés dans les pièces ou enceintes, blocs dans lesquels il peut subir un traitement secondaireAppareillage spécialement conçu pour de tels systèmes caractérisés par le traitement de l'air autrement que par chauffage et refroidissement par humidificationSystèmes de conditionnement d'air dans lesquels l'air conditionné primaire est fourni par une ou plusieurs stations centrales aux blocs de distribution situés dans les pièces ou enceintes, blocs dans lesquels il peut subir un traitement secondaireAppareillage spécialement conçu pour de tels systèmes caractérisés par le traitement de l'air autrement que par chauffage et refroidissement par déshumidification avec chauffage subséquent, c.-à-d. dans lesquels l'air, porté au degré d'humidité voulu dans la centrale, traverse un élément de chauffage pour atteindre la température désirée
• F25B 29/00 - Systèmes de chauffage et de refroidissement combinés, p. ex. fonctionnant alternativement ou simultanément
• F25B 39/00 - ÉvaporateursCondenseurs

Abrégé

A SiC epitaxial wafer is provided with a SiC single crystal substrate of which the main surface has an off angle of 0.4° to 5° with respect to (0001) plane and an epitaxial layer which is provided on the SiC single crystal substrate, wherein the epitaxial layer has a basal-plane dislocation density of 0.1/cm2 or less in an area lying between the SiC single crystal substrate to the outer surface and an inside 3C triangular defect density of 0.1/cm2 or less.

Classes IPC  ?

• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
• C23C 16/42 - Siliciures
• C30B 25/16 - Commande ou régulation
• C30B 29/36 - Carbures
• H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale

Abrégé

A vibration energy harvester includes: a pair of electrodes provided so as to face opposite each other, with at least one of the pair of electrodes allowed to move; and an ion gel provided between the pair of electrodes, which is formed by using an ionic liquid, wherein: as an external vibration causes the electrode to move along a direction in which a distance between the pair of electrodes changes, power is generated through a change in an area of an electric double layer formed on two sides of an interface of each electrode and the ion gel.

Classes IPC  ?

• H02N 1/00 - Générateurs ou moteurs électrostatiques utilisant un porteur mobile de charge électrostatique qui est solide
• F03G 7/08 - Mécanismes produisant une puissance mécanique, non prévus ailleurs ou utilisant une source d'énergie non prévue ailleurs récupérant l'énergie produite par le balancement, le roulement, le tangage ou des mouvements semblabes, p. ex. par les vibrations d'une machine
• B81B 5/00 - Dispositifs comportant des éléments mobiles les uns par rapport aux autres, p. ex. comportant des éléments coulissants ou rotatifs
• H01G 7/02 - Électrets, c.-à-d. ayant un diélectrique polarisé en permanence
• H01G 11/08 - Combinaisons structurelles, p. ex. assemblage ou connexion de condensateurs hybrides ou EDL avec d’autres composants électriques, au moins un condensateur hybride ou EDL étant le composant principal
• H01G 11/56 - Électrolytes solides, p. ex. gelsAdditifs pour ceux-ci

Abrégé

[Problem] To provide a film deposition device that can inhibit the infiltration of a gas, suppress the generation of particles resulting from the adhesion of deposited matter, and prevent the generation of crystal defects in the film that is formed. [Solution] A feeding unit 4 is provided with: a first partition 32; a second partition 401 that is disposed at a predetermined interval below the first partition; a third partition 402 that is disposed at a predetermined interval below the second partition; a first passage 431 into which a first gas is introduced, said first passage being disposed between the first partition and the second partition; a second passage 432 into which a second gas is introduced, said second passage being disposed between the second partition and the third partition; a first pipe 411 that communicates with the first passage from the second partition to below the third partition; a second pipe 421 that communicates with the second passage from the third partition to below the third partition, said second pipe being disposed so as to enclose the first pipe; and a protruding part that protrudes from an outer peripheral face 411c of the first pipe to an inner peripheral face 421b of the second pipe, or vice versa, said protruding part being disposed on the outer peripheral face of the first pipe or the inner peripheral face of the second pipe.

Classes IPC  ?

• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
• C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction

Abrégé

A cooling air amount adjustment device of a concrete cask is provided. The device includes at least one of an air outlet port opening level adjustment mechanism and an air inlet port opening level adjustment mechanism which are adapted to automatically perform adjustment to reduce a flow rate of a cooling air when a temperature of the cooling air at an air outlet port is lower than an adjustment reference temperature, and adjustment to increase the flow rate of the cooling air so as to restore the flow rate of the cooling air when the temperature of the cooling air at the air outlet port is higher than the adjustment reference temperature.

Classes IPC  ?

• G21F 5/10 - Dispositifs d'évacuation de chaleur spécialement adaptés à ces récipients, p. ex. utilisant une circulation de fluide ou des ailettes de refroidissement
• G21C 19/04 - Moyens pour commander le flux du réfrigérant sur les objets manipulésMoyens pour commander le flux de réfrigérant à travers le canal à alimenter
• G21C 19/06 - Moyens pour supporter ou emmagasiner des éléments combustibles ou des éléments de commande
• G21F 9/34 - Moyens de se débarrasser des résidus solides
• G21F 9/36 - Moyens de se débarrasser des résidus solides par empaquetageMoyens de se débarrasser des résidus solides par mise en balles

Abrégé

A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a bottom portion of a metallic sealed container. A feeding air temperature of external air passing between the metallic sealed container and a concrete-made storage container is also measured. Presence of leakage of inactive gas is determined by comparing the temperatures or by utilizing a physical amount calculated by using the temperatures.

Classes IPC  ?

• G21F 5/10 - Dispositifs d'évacuation de chaleur spécialement adaptés à ces récipients, p. ex. utilisant une circulation de fluide ou des ailettes de refroidissement
• G01M 3/00 - Examen de l'étanchéité des structures ou ouvrages vis-à-vis d'un fluide
• G21F 5/12 - Dispositifs obturateurs pour récipientsDispositions pour leur étanchéité

Abrégé

A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a top portion of a metallic sealed container, a temperature at a bottom portion of a lid portion of a concrete-made storage container facing the top portion of the metallic sealed container, or a temperature of a member existing between the bottom portion of the lid portion and the top portion of the metallic sealed container. An inner temperature of the lid portion of the concrete-made storage container is also measured. Presence of leakage of inactive gas is estimated by comparing the temperatures.

Classes IPC  ?

• G21F 5/00 - Récipients blindés portatifs ou transportables
• G21F 5/012 - Râteliers pour éléments combustibles dans le récipient
• G21F 5/06 - Détails ou accessoires des récipients
• G21C 13/00 - Enceintes sous pressionEnceintes d'enveloppeEnveloppes en général
• F25D 3/00 - Dispositifs utilisant d'autres agents froidsDispositifs utilisant des récipients conservant le froid
• G01M 3/00 - Examen de l'étanchéité des structures ou ouvrages vis-à-vis d'un fluide
• G01N 25/72 - Recherche de la présence de criques

Abrégé

In this silicon carbide single crystal, a threading dislocation (20) is present, whereof the dislocation line (21) traverses the c-plane while the Burgers vector (bv) has at least a component in the c-axis direction. Among the threading dislocations, the density is 300/cm2 or less for the threading dislocations where the angle (θ1) formed by the Burgers vector and the direction of the dislocation line is greater than 0° and 40° or less, and the density is 30/cm2 or less for the threading dislocations where the angle is greater than 40°.

Classes IPC  ?

• C30B 29/36 - Carbures
• C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
• C23C 16/42 - Siliciures
• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique

Abrégé

a of the body 2. A first compressive stress is applied beforehand to a range L of the body 2 where a tensile residual stress is expected to be generated by the welding of the cover 4, the tensile residual stress is canceled by welding the cover 4 with a compressive residual stress generated in the range L, and then a second compressive stress is applied so as to generate a compressive residual stress over the range L.

Classes IPC  ?

• G21F 5/00 - Récipients blindés portatifs ou transportables
• G21F 5/12 - Dispositifs obturateurs pour récipientsDispositions pour leur étanchéité
• G21F 9/36 - Moyens de se débarrasser des résidus solides par empaquetageMoyens de se débarrasser des résidus solides par mise en balles
• G21F 5/008 - Récipients pour éléments combustibles
• B65D 53/06 - Étanchéité réalisée par matériaux liquides ou plastiques
• G21F 7/015 - Dispositifs de commande de l'atmosphère dans la chambre, de la température ou de la pression

Abrégé

A vibration power generation element, provided with: a pair of electrodes arranged so as to face each other, at least one of the electrodes being capable of moving; and an ion gel provided so as to be interposed between the electrodes, the ion gel being formed by gelling an ionic liquid. An electrode is caused to move by a vibration from the exterior in a direction such that the spacing between the electrodes changes, whereby the area of an electric double layer formed so as to sandwich the interface between the electrode and the ion gel changes, generating power.

Classes IPC  ?

• H02N 1/00 - Générateurs ou moteurs électrostatiques utilisant un porteur mobile de charge électrostatique qui est solide
• B81B 5/00 - Dispositifs comportant des éléments mobiles les uns par rapport aux autres, p. ex. comportant des éléments coulissants ou rotatifs
• H01G 7/02 - Électrets, c.-à-d. ayant un diélectrique polarisé en permanence
• H01G 11/08 - Combinaisons structurelles, p. ex. assemblage ou connexion de condensateurs hybrides ou EDL avec d’autres composants électriques, au moins un condensateur hybride ou EDL étant le composant principal
• H01G 11/56 - Électrolytes solides, p. ex. gelsAdditifs pour ceux-ci

Abrégé

A method for manufacturing a SiC epitaxial wafer according to an embodiment of the present invention comprises: separately introducing, into a reaction space for SiC epitaxial growth,a basic N-based gas that includes N atoms in the molecules and is composed of molecules which have neither double bonds nor triple bonds between the N atoms and a Cl-based gas composed of molecules that include Cl atoms in the molecules; and mixing the N-based gas and Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and Cl-based gas.

Classes IPC  ?

• C30B 29/36 - Carbures
• C23C 16/42 - Siliciures
• C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
• C30B 25/14 - Moyens d'introduction et d'évacuation des gazModification du courant des gaz réactifs
• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique

Abrégé

In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.

Classes IPC  ?

• C30B 23/06 - Chauffage de l'enceinte de dépôt, du substrat ou du matériau à évaporer
• C30B 25/14 - Moyens d'introduction et d'évacuation des gazModification du courant des gaz réactifs
• C30B 29/36 - Carbures
• C30B 25/16 - Commande ou régulation
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• C23C 16/32 - Carbures
• C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
• C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction

Abrégé

3 Pa.

Classes IPC  ?

• H01L 29/15 - Structures avec une variation de potentiel périodique ou quasi périodique, p.ex. puits quantiques multiples, superréseaux
• H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
• H01L 29/66 - Types de dispositifs semi-conducteurs
• H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
• C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
• C30B 29/36 - Carbures
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
• H01L 29/167 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée caractérisés en outre par le matériau de dopage
• H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
• H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges

Abrégé

A SiC single crystal is grown from a first seed crystal (50a) formed from silicon carbide, and the SiC single crystal is cut to form a base section (51c), a tip section (51a) and a middle section (51b); the middle section (51b) is removed, the base section (51c) and tip section (51a) are joined as a second seed crystal (50b), and from the growth face (52) thereof, a SiC single crystal is grown.

Classes IPC  ?

• C30B 29/36 - Carbures

Abrégé

In this SiC diode (20), the impurity concentration of a second semiconductor layer portion (25A) having a thickness of less than 100 nm (for example, 50 nm) changes from a third impurity concentration (for example, 1 × 1020 cm-3) to an acceptor density of 1 × 1019 cm-3, said third impurity concentration being different by one or more orders of magnitude from an acceptor density of 1 × 1019 cm-3 that is a second impurity concentration. A discontinuous growth surface, where the impurity concentration changes abruptly, is formed in the second semiconductor layer portion (25A). This discontinuous growth surface serves as a recombination promoting surface for promoting the recombination of carriers, enabling a switching loss to be reduced. In addition, the carrier injection efficiency into a drift layer (23) is maintained high as compared with the case in which a pn-junction interface is used as the discontinuous growth surface, thereby enabling a steady loss to be prevented from increasing. This provides a bipolar semiconductor device, the switching loss of which can be reduced and the steady loss of which can be prevented from increasing.

Classes IPC  ?

• H01L 29/861 - Diodes
• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
• H01L 21/331 - Transistors
• H01L 21/336 - Transistors à effet de champ à grille isolée
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/12 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués
• H01L 29/161 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée comprenant plusieurs des éléments prévus en
• H01L 29/73 - Transistors bipolaires à jonction
• H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
• H01L 29/744 - Dispositifs désamorçables par la gâchette
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/868 - Diodes PIN

Abrégé

　A substance identification device (122) provided with: a storage unit (130) that pre-stores the index spectrum of plasma at a plurality of temperatures, the peak ratio of H2 and O2 in a plurality of mixture ratios of air to plasma, and substance identification information in which a substance is associated with the light emission intensity peak ratio or the composition ratio relative to a plurality of decomposition products, or the spectrum shape; a spectrum derivation unit (144) that uses laser-induced breakdown spectroscopy to make a sample (102) into a plasma and derives the substance spectrum thereof; a temperature identification unit (146) that compares the substance spectrum and the index spectrum and identifies the temperature of the plasma of the substance; a mixture ratio identification unit (148) that identifies the mixture ratio on the basis of the peak ratio of H2 and O2 in the substance spectrum; and a substance identification unit (150) that derives the light emission intensity peak ratio or the composition ratio relative to a defined plurality of decomposition products in the substance spectrum, or the spectrum shape of the substance spectrum, refers to the substance identification information, and identifies the substance.

Classes IPC  ?

• G01N 21/63 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité optiquement

Abrégé

In this silicon carbide semiconductor film-forming apparatus, first to third gases are introduced into first to third separated chambers (41-43), respectively, through first to third introduction ports (31-33). The first and second gases are a Si material-containing gas and a C material-containing gas, and the third gas does not contain Si and C. The first and second gases are independently supplied to a growing space through first and second supply paths (41b, 42b) that extend from the first and second separated chambers, respectively. Furthermore, the third gas is introduced between the first and second gases through a third supply path (43b) from the third separated chamber.

Classes IPC  ?

• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
• C23C 16/42 - Siliciures
• C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
• C30B 29/36 - Carbures

Abrégé

In this production method for a SiC single crystal, a pedestal (9) is disposed inside a heating container (8) configuring a reaction chamber in which a SiC single crystal (20) is grown, a seed crystal (5) is adhered to the pedestal (9), the SiC single crystal is grown on the seed crystal by subjecting a starting-material gas to thermal decomposition in the heating container, the growth rate of the SiC single crystal is compared with a threshold range centred on a target value, if the growth rate is within the threshold range, the rotation speed of the seed crystal is maintained, in cases when the growth rate is greater than an upper-limit value of the threshold range, the rotation speed is maintained or reduced, and in cases when the growth rate is less than a lower-limit value of the threshold range, the rotation speed is increased.

Classes IPC  ?

• C30B 29/36 - Carbures
• C30B 25/16 - Commande ou régulation

Abrégé

[Problem] To provide a method to prevent stress corrosion cracking of storage canister and a storage canister capable of generating compressive residual stress on the entire outer surface while in a state where radiation from nuclear fuel is shielded. [Solution] A method to prevent stress corrosion cracking of a storage canister (1) prevents stress corrosion cracking by applying compressive stress in a range where tensile residual stress occurs in a metal body (2) by welding a cover (4) to the top (2a) of the body (2). A first compressive stress is applied, beforehand, to a range (L) of the body (2) where tensile residual stress is expected to be generated by welding the cover (4), the tensile residual stress is canceled by welding the cover (4) while a compressive residual stress is generated in the range (L), and then a second compressive stress is applied to generate a compressive residual stress over the entire range (L).

Classes IPC  ?

• G21C 19/32 - Appareils pour enlever des objets ou matériaux radioactifs de l'aire de décharge du réacteur, p. ex. pour les porter à un emplacement de stockageAppareils pour manipuler des objets ou matériaux radioactifs à l'intérieur d'un emplacement de stockage ou les extraire de celui-ci
• G21D 1/00 - Détails des installations à énergie nucléaire
• G21F 5/00 - Récipients blindés portatifs ou transportables
• G21F 9/36 - Moyens de se débarrasser des résidus solides par empaquetageMoyens de se débarrasser des résidus solides par mise en balles

Abrégé

In a process for growing a hexagonal single crystal, an off angle is imparted to a hexagonal single crystal, which serves as a base for the growth of the crystal, in a first direction [11-20] relative to a basal plane [0001] that serves as the main crystal growth plane, so that such a cross-sectional shape that the thickness of the crystal is gradually decreased in a step-like manner from a reference line AA' that is parallel to the first direction [11-20] toward second directions [-1100] and [1-100] that respectively extend toward the both sides of the reference line AA' and are perpendicular to the first direction [11-20] is formed in the hexagonal single crystal. In this manner, the dislocation that penetrates in the c-axis direction contained in the hexagonal single crystal can be converted into a defect that is inclined at 40˚ or more in the basal plane direction against the c-axis direction during the growth of the crystal, and the direction of the propagation of the defect can be adjusted to a direction that is included between the opposite direction [-1-120] of the first direction [11-20] and the second directions [-1100] and [1-100], whereby the defect can be eliminated out of the crystal.

Classes IPC  ?

• C30B 29/36 - Carbures

Abrégé

[Problem] To provide a semiconductor structure, a semiconductor device, and method for producing the semiconductor structure with which mechanical strength is excellent and it is possible to reduce resistance during conduction of electricity. [Solution] The semiconductor structure of the present invention is at least characterized in having an α-type crystal structure, containing aluminum at an impurity concentration of 1 x 1019 cm-3 or higher, and having a p-type silicon carbide single crystal layer having a thickness of 50 µm or higher. Moreover, the method for producing a semiconductor structure of the present invention is at least characterized in comprising an epitaxial growth step for the introduction of a silicon carbide source and an aluminum source and promoting epitaxial growth of a p-type silicon carbide single crystal layer on top of the bottom layer of silicon carbide single crystals having an α-type crystal structure, wherein the epitaxial growth step is performed under temperature conditions of 1,500 to 1,700ºC and under pressure conditions of 5 x 103 to 25 x 103 Pa.

Classes IPC  ?

• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
• C23C 16/42 - Siliciures
• C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
• C30B 29/36 - Carbures

Abrégé

A molten carbonate fuel cell, which makes a separator unnecessary, cuts down the number of components, and markedly reduces the costs, is provided. In the cell, a cathode, an electrolyte plate holding an electrolyte, and an anode are provided concentrically with a tube body, the electrolyte plate is held by the anode, and the electrolyte plate is sandwiched between the anode and the cathode, so that the cell is constructed without the use of a separator.

Classes IPC  ?

• H01M 8/14 - Éléments à combustible avec électrolytes fondus

Abrégé

When installing or removing various measurement apparatuses upon infrastructure which is subject to monitoring, support, and/or maintenance, a dynamic infrastructure administration system according to the present invention has related software automatically set within an infrastructure administration system and is capable of rapidly and easily commencing status monitoring. When a sensor (2A) as a measurement apparatus is connected, a measurement apparatus read-in device (5A) transmits as a low-level device the type of measurement apparatus and the objective for connecting the measurement apparatus to a directory server (3). The directory server (3) queries class information and generates an instance, queries inter-class relationships and generates and records a relationship instance, transmits the generated instances to a related device based on an inter-instance relationship, and exchanges infrastructure administration data with the instances based on the inter-instance relationship.

Classes IPC  ?

• G06Q 50/10 - Services
• G06Q 50/06 - Fourniture d’énergie ou d’eau

Abrégé

A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

Classes IPC  ?

• C30B 25/10 - Chauffage de l'enceinte de réaction ou du substrat

Abrégé

A roadway network generation unit (121) generates a roadway network model which is a model of map data relating to a roadway network. A charging station positioning unit (122) positions a model of a charging station which carries out a charging of an electric vehicle at an arbitrary location upon the generated roadway network model. A charging station re-positioning unit (124) executes an algorithm, treating the roadway network model as a static electric field and the model of the charging station as a charged particle which moves within the static electric field by repulsion, wherein a charged particle moves within the static electric field, which has a boundary condition, and after executing the algorithm, repositions the model of the charging station in the roadway model.

Classes IPC  ?

• G06Q 50/10 - Services
• G06F 19/00 - Équipement ou méthodes de traitement de données ou de calcul numérique, spécialement adaptés à des applications spécifiques (spécialement adaptés à des fonctions spécifiques G06F 17/00;systèmes ou méthodes de traitement de données spécialement adaptés à des fins administratives, commerciales, financières, de gestion, de surveillance ou de prévision G06Q;informatique médicale G16H)

Abrégé

A system for treating a selenium-containing liquid comprises a concentration measurement means (15) for measuring the peroxodisulfuric acid concentration and tetravalent selenium concentration in a selenium-containing liquid; a setting means (21) for setting the feed amount of divalent manganese on the basis of the concentrations of peroxodisulfuric acid and tetravalent selenium and the reaction rate constant ratio, which is the ratio of the reaction rate constant in the reaction between the divalent manganese and the peroxodisulfuric acid with respect to the reaction rate constant in the reaction between the tetravalent selenium and the peroxodisulfuric acid; and an adding means (14) for adding divalent manganese to the selenium-containing liquid such that the divalent manganese in the selenium-containing liquid is maintained at the abovementioned feed amount of divalent manganese. Oxidation from tetravalent selenium to hexavalent selenium is suppressed by using the addition means to add the divalent manganese to the selenium-containing liquid.

Classes IPC  ?

• C02F 1/58 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par élimination de composés spécifiés dissous
• B01D 53/50 - Oxydes de soufre
• B01D 53/77 - Procédés en phase liquide
• C02F 1/70 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par réduction

Abrégé

A deposition apparatus 50 includes a chamber 1 having at its top section a gas inlet 4 for supplying deposition gas 25. Inside chamber 1 is a susceptor 7 on which to place a substrate 6; a heater 8 located below the substrate 6; and a liner 2 for covering the inner walls of the chamber 1. Apparatus 50 deposits a film on the substrate 6 by supplying deposition gas 25 from gas inlet 4 into chamber 1 while heating substrate 6. An upper electric resistance heater cluster 35 is located between the inner walls of the chamber 1 and liner 2 such that the upper heater 35 surrounds the liner 2. The upper heater 35 is divided vertically into electric resistance heaters 36, 37, and 38 which are independently temperature-controlled. The substrate 6 is heated with the use of both heater 8 and the upper heater cluster 35.

Classes IPC  ?

• C23C 16/00 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD]
• C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction

Abrégé

Disclosed is a slag monitoring device (100) for a coal gasifier, that is equipped with a slag hole camera (11) that observes a slag hole (3) out of which molten slag flows, a water surface camera (12) that observes the condition of the slag flowing out of the slag hole (3) as the slag falls upon the surface (5H) of cooling water (5), a falling sound sensor (13) that observes the sound of the slag falling upon the water surface (5H), and a processing device (20) that assesses the deposit locations of solidified slag on the basis of the area of the opening of the slag hole (3) observed by the slag hole camera (11) and the slag drop lines and drop locations observed by the water surface camera.

Classes IPC  ?

• F27D 3/14 - Chargement ou déchargement d'un matériau liquide ou fondu
• C10J 3/46 - Gazéification des combustibles granuleux ou pulvérulents en suspension
• F23J 1/00 - Enlèvement des cendres, mâchefers ou scories des chambres de combustion
• F23J 1/08 - Enlèvement des scories liquides
• F27D 21/00 - Aménagement des dispositifs de surveillanceAménagement des dispositifs de sécurité
• F27D 21/02 - Dispositifs d'observation ou d'éclairage

Abrégé

In order to enable the measurement of the salinity and water temperature of a marine surface layer using data obtained by a marine radar, the deviation ( ΔS') between the effect of waves in a standard time period on received power (RSI0') and the effect of waves in a measured time period on received power (RSI m') is estimated; the deviation (Δs') between the effect of waves in the standard time period on received power (RSI0') and the effect of waves in a fluctuating electrical conductivity time period on received power is estimated; the regression function (f(σ)) of the relationship between the received power, wherein the deviation (Δs') has been subtracted from the received power in the fluctuating electrical conductivity time period, and the electrical conductivity (σ) in the fluctuating electrical conductivity time period is estimated; the value of the electrical conductivity (σc) in the measured time period is estimated using RSI0'-RSIm'＝ΔS'+{f(σ0)-f(σc)} (σ0: the electrical conductivity in the standard time period); and practical salinity is calculated.

Classes IPC  ?

• G01N 22/00 - Recherche ou analyse des matériaux par l'utilisation de micro-ondes ou d'ondes radio, c.-à-d. d'ondes électromagnétiques d'une longueur d'onde d'un millimètre ou plus
• G01K 1/02 - Moyens d’indication ou d’enregistrement spécialement adaptés aux thermomètres
• G01N 33/18 - Eau

Abrégé

Disclosed is a power conversion device which achieves reductions in switching loss due to a reverse recovery current and heat generation loss. Specifically disclosed is a power conversion device provided with a cascode element (21) configured by electrically connecting a normally-on switching element (4) and a normally-off switching element (5) in series and connecting a gate terminal of the normally-on switching element (4) and a source terminal of the normally-off switching element (5) via a cascode connection diode (7), and a high-speed diode (6) electrically connected in parallel with the cascode element (21) and having a cathode region connected to a positive electrode terminal and an anode region connected to a negative electrode terminal.

Classes IPC  ?

• H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
• H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques

Abrégé

Disclosed are a scanning device for nondestructive inspection and nondestructive inspection equipment which can be adapted easily to the size and shape of a structure to be inspected, and can be attached easily to the structure while attaining compaction and low price. Specifically disclosed is a scanning device (2) for nondestructive inspection wherein a probe (3) used for detection of a defect in an object (P) to be inspected is moved relatively to the test surface of the object (P) to be inspected. The scanning device for nondestructive inspection comprises a rodlike guide element (27) arranged on the object (P) to be inspected and extending along the surface thereof, a pair of wheels (23) which is provided, in the circumferential surface touching the object (P) to be inspected, with an annular groove (23F) that holds the guide element (27) internally, a suction unit (23) which generates a suction force for pressing the wheels (23) to the object (P) to be inspected, and a housing (21) which holds the probe (3) and to which the pair of wheels (23) is attached rotatably about the axis of rotation that extends in the direction intersecting the contact surface of the object (P) to be inspected with the pair of wheels (23).

Classes IPC  ?

• G01N 29/26 - Dispositions pour l'orientation ou le balayage
• G01N 27/90 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant des variables magnétiques pour rechercher la présence des criques en utilisant les courants de Foucault
• G01N 29/24 - Sondes

Abrégé

Provided is an antifouling agent which comprises a secondary isocyanocyclohexane compound represented by general formula (1) [wherein R represents an alkyl group]. This antifouling agent is useful for preventing contaminations and damages caused by the adhesion of aquatic pests, such as barnacles, mussels, hydrozoans and bryozoans, to ship bottoms, fishing nets, power plant cooling systems and so on. The aforesaid antifouling agent is comparable or superior to the conventionally employed compounds in antifouling effect and safety, and can be more easily and economically produced.

Classes IPC  ?

• A01N 37/34 - Nitriles
• A01P 17/00 - Répulsifs des animaux nuisibles
• C07C 265/10 - Dérivés d'acide isocyanique ayant des groupes isocyanate liés à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons
• C09D 5/16 - Peintures antisalissuresPeintures subaquatiques
• C09D 7/12 - Autres adjuvants
• C09D 201/00 - Compositions de revêtement à base de composés macromoléculaires non spécifiés

Abrégé

Disclosed is a gasification system which is provided with: a coal crushing device (2) for obtaining a coal powder by crushing coals (31); a coal gasification furnace (3) for producing a combustible gas by reacting the coal powder with a gasification agent (36); and a coal powder supply device (4) for supplying the coal powder obtained by the coal crushing device (2) to the coal gasification furnace (3). The gasification system is also provided with: a carbonization device (5) for carbonizing a biomass raw material (32) that is derived from a plant; a crude vinegar collecting device (6) for collecting a crude vinegar that is derived from the biomass raw material by cooling the volatile portions generated by the carbonization device (5); a biomass carbide supply device (7) for supplying a biomass carbide obtained by the carbonization device (5) to the coal crushing device (2); and a crude vinegar supply device (8) for supplying the crude vinegar collected by the crude vinegar collecting device (6) to the coal crushing device (2).

Classes IPC  ?

• C10J 3/58 - Production de gaz contenant de l'oxyde de carbone et de l'hydrogène, p. ex. du gaz de synthèse ou du gaz de ville, à partir de matières carbonées solides par des procédés d'oxydation partielle faisant intervenir de l'oxygène ou de la vapeur combiné avec une distillation préalable du combustible
• C10J 3/00 - Production de gaz contenant de l'oxyde de carbone et de l'hydrogène, p. ex. du gaz de synthèse ou du gaz de ville, à partir de matières carbonées solides par des procédés d'oxydation partielle faisant intervenir de l'oxygène ou de la vapeur
• C10J 3/46 - Gazéification des combustibles granuleux ou pulvérulents en suspension

Abrégé

A packaged thermoelectric conversion module wherein a pressurizing mechanism or coating with a heat-conductive grease for reducing thermal contact resistance is not required between a thermoelectric conversion module sealed in an airtight container and a heat source. In a packaged thermoelectric conversion module (1) wherein the interior of the airtight container (13) accommodating the thermoelectric conversion module (5) is decompressed or evacuated, the interior of the airtight container (13) is partitioned with a partition plate (7) into two chambers (14, 17). One of the chambers (17) is provided with the thermoelectric conversion module (5) and electrodes (9a, 9b) led out to the outside of the airtight container (13), while a flow path (16) for introducing a heating medium (26 or 25) from an external heating medium supply source and circulating the heating medium between the chamber (14) and the external heating medium supply source is formed in the other chamber (14). While transferring heat to one surfaces of thermoelectric semiconductors (2) by the heating medium (26 or 25) via the partition plate (7), heat is transferred between the other surfaces of thermoelectric semiconductors (2) and an external heat source via the airtight container (13).

Classes IPC  ?

• H01L 35/30 - DISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS - Détails fonctionnant exclusivement par effet Peltier ou effet Seebeck caractérisés par les moyens d'échange de chaleur à la jonction
• H02N 11/00 - Générateurs ou moteurs non prévus ailleursMouvements dits perpétuels obtenus par des moyens électriques ou magnétiques

Abrégé

A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.

Classes IPC  ?

• H01L 21/26 - Bombardement par des radiations ondulatoires ou corpusculaires
• C30B 31/22 - Dopage par irradiation au moyen de radiations électromagnétiques ou par rayonnement corpusculaire par implantation d'ions
• H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
• H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
• C30B 29/36 - Carbures
• H01L 29/732 - Transistors verticaux
• H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges

Abrégé

Provided is a ground flare (10) capable of reducing low frequency vibration of a chimney (20) or ground flare tower below a threshold level thereby preventing resonance of surrounding structures. In a ground flare where flammable waste gas is burned by burners (11) disposed under the chimney (20) and the lower portion of the chimney (20) and the burners (11) are surrounded by a wind shield (40), low frequency noise level of the ground flare tower comprising the chimney (20) and the windshield (40) has been reduced by at least one of changing the natural frequency of the tower or increasing the number of the towers or implementing a device for absorbing low frequency vibration into the tower.

Classes IPC  ?

• F23G 7/08 - Procédés ou appareils, p. ex. incinérateurs, spécialement adaptés à la combustion de déchets particuliers ou de combustibles pauvres, p. ex. des produits chimiques de gaz d'évacuation ou de gaz nocifs, p. ex. de gaz d'échappement utilisant des torchères, p. ex. dans des cheminées

Abrégé

By covering the inner circumferential surface of an outer cylinder with a vapor film, thermal conductivity is reduced and the phenomenon of sudden temperature increases in the cylinder wall of the outer cylinder can be prevented, thereby preventing heat damage to the outer cylinder. Additionally, burner burnout, caused by insufficient cooling resulting from irregularities in cooling efficiency at the burner tip, is also prevented. A tip, which is positioned inside a two-stage entrained-flow bed coal gasification furnace, has a double-walled cylindrical structure with an outer cylinder and an inner cylinder, and is configured so that cooling water to cool the tip is supplied via the inside of the inner cylinder and, after cooling the tip, is returned to the base end via the space formed between the outer cylinder and the inner cylinder, and is additionally configured so that the flow path surface area of the space formed between the outer cylinder and the inner cylinder is less than the flow path surface area formed inside the inner cylinder, thus configured so that a swirling flow along guides formed on the outer circumferential surface of the inner cylinder, and a roughly linear flow in the lengthwise direction of the outer cylinder and the inner cylinder, are imparted to the cooling water that is returning to the base end via the space formed between the outer cylinder and the inner cylinder.

Classes IPC  ?

• F23D 14/78 - Refroidissement des éléments du brûleur
• F23D 1/00 - Brûleurs à combustibles pulvérulents
• F23D 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe
• F23J 1/00 - Enlèvement des cendres, mâchefers ou scories des chambres de combustion
• F27D 7/02 - Alimentation en vapeur d'eau, en gaz ou en liquides
• F27D 9/00 - Refroidissement des fours ou des charges s'y trouvant
• F27D 25/00 - Dispositifs pour enlever les incrustations

Abrégé

A discharge flow quantity of a conductive fluid from an electromagnetic pump is simply and accurately measured with a small space limitation.  Specifically, each flow quantity of each electromagnetic pump is suitably measured by an electromagnetic pump unit wherein a plurality of electromagnetic pumps are arranged in parallel in one pump container.  A magnetic sensor, for instance, a magnetic flux density measuring coil (6), is arranged at the vicinity of a discharge port (2) of an electromagnetic pump (1), the magnetic flux density of a magnetic field (4), which is generated in the electromagnetic pump (1) and is pushed out from the discharge port (2) of the electromagnetic pump (1) with a flow of the conductive fluid (5), is measured, and a flow quantity of the electromagnetic pump (1) is measured, based on the relationship between a previously obtained magnetic flux density of the magnetic field (4) pushed out from the discharge port (2) of the electromagnetic pump (1) and the flow quantity of the conductive fluid (5).

Classes IPC  ?

• H02K 44/06 - Pompes à induction
• G01F 1/00 - Mesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu
• G01F 1/56 - Mesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu en utilisant des effets électriques ou magnétiques

Abrégé

Provided are means which enable both efficient treatment of sludge and reutilization of treated sludge as a resource.  Namely, a sludge treatment process characterized by comprising the step (A) of molding sludge into products having surface-surface distances of 2 to 10mm and the step (B) of bringing the products into contact with liquefied dimethyl ether to extract water from the products; and a sludge treatment system characterized by being provided with a molding machine for molding sludge into products having surface-surface distances of 2 to 10mm and an extraction tank for bringing the products into contact with liquefied dimethyl ether to extract water from the products.

Classes IPC  ?

• C02F 11/12 - Traitement des boues d'égoutDispositifs à cet effet par déshydratation, séchage ou épaississement

Abrégé

It is intended to provide an antifouling coating film wherein an antifouling agent, which is in the form of a monomer, is introduced into a high-molecule hydrogel matrix. Namely, an antifouling coating film that is made of a high-molecule hydrogel and free from the attachment of aquatic organisms, which is an antifouling coating film free from the attachment of aquatic organisms characterized in that the high-molecule hydrogel comprises an antifouling monomer as one of the constituents of the same.

Classes IPC  ?

• C09D 5/16 - Peintures antisalissuresPeintures subaquatiques
• A01N 25/04 - Dispersions ou gels
• A01N 47/40 - Biocides, produits repoussant ou attirant les animaux nuisibles, ou régulateurs de croissance des végétaux, contenant des composés organiques comportant un atome de carbone ne faisant pas partie d'un cycle et ne comportant pas de liaison à un atome de carbone ou d'hydrogène, p. ex. dérivés de l'acide carbonique l'atome de carbone comportant une double ou une triple liaison à l'azote, p. ex. cyanates, cyanamides
• A01P 17/00 - Répulsifs des animaux nuisibles
• B05D 5/00 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers
• B63B 59/04 - Moyens pour éviter la salissure de la coque
• C09D 5/00 - Compositions de revêtement, p. ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produitsApprêts en pâte
• C09D 5/14 - Peintures contenant des biocides, p. ex. fongicides, insecticides ou pesticides
• C09D 7/12 - Autres adjuvants
• C09D 133/04 - Homopolymères ou copolymères d'esters
• C09D 133/26 - Homopolymères ou copolymères de l'acrylamide ou du méthacrylamide

Abrégé

An apparatus which comprises: a carbonizer (1) which pyrolyzes a biomass to yield a pyrolysis gas and a carbonization product; a furnace (2) in which the carbonization product supplied from the carbonizer (1) is burned; a closed vessel (3) which is disposed in the furnace (2) and holds therein a carbonate (4) which has been melted by the heat generated by the carbonization product burned in the furnace (2); an introduction pipe (5) disposed so that the pyrolysis gas is introduced into the molten carbonate (4) in the closed vessel (3); and a fuel gas supply pipe (6) disposed so that a fuel gas, which is the pyrolysis gas sent through the introduction pipe (5), passed through the molten carbonate (4), and purified by reaction with the molten carbonate (4), is sent from the closed vessel (3) to the outside of the furnace (2).

Classes IPC  ?

• C10K 1/00 - Purification des gaz combustibles contenant de l'oxyde de carbone
• B09B 3/00 - Destruction de déchets solides ou transformation de déchets solides en quelque chose d'utile ou d'inoffensif
• C10J 3/00 - Production de gaz contenant de l'oxyde de carbone et de l'hydrogène, p. ex. du gaz de synthèse ou du gaz de ville, à partir de matières carbonées solides par des procédés d'oxydation partielle faisant intervenir de l'oxygène ou de la vapeur
• C10K 1/02 - Dépoussiérage
• C10K 1/08 - Purification des gaz combustibles contenant de l'oxyde de carbone par lavage avec des liquidesRégénération des liqueurs de lavage
• F02C 3/28 - Ensembles fonctionnels de turbines à gaz caractérisés par l'utilisation de produits de combustion comme fluide de travail utilisant un combustible, un oxydant ou un fluide de dilution particulier pour produire les produits de combustion le combustible ou l'oxydant étant solide ou pulvérulent, p. ex. mélangé avec un liquide ou en suspension utilisant un générateur de gaz séparé pour gazéifier le combustible avant la combustion
• F02D 19/02 - Commande des moteurs caractérisés par l'emploi de combustible non liquide, de combustibles multiples ou de substances non combustibles ajoutées au mélange carburant particulière aux moteurs fonctionnant avec des combustibles gazeux
• H01M 8/06 - Combinaison d’éléments à combustible avec des moyens de production de réactifs ou pour le traitement de résidus

Abrégé

An organic field-effect transistor generally comprises a source electrode, a drain electrode, an organic semiconductor layer in contact with these electrodes, a gate insulating layer adjacent to the organic semiconductor layer, and a gate electrode in contact with the gate insulating layer. For the gate insulating layer, 旜a substance which is in a liquid form having no content of pastes or thickening agents, and the main constituent thereof is an ionic liquid” is used, thereby 旜a frequency where the capacitance decreases to one-tenth of a capacitance at a modulation frequency of 10Hz in the gate voltage” becomes 10kHz or higher. As a result, an organic field-effect transistor with a low driving voltage, sufficiently high current amplification factor, and a high responsiveness (旜a frequency where the capacitance decreases to one-tenth of the capacitance at the modulation frequency of 10Hz in the gate voltage” is 10kHz or higher) can be provided.

Classes IPC  ?

• H01L 29/786 - Transistors à couche mince
• H01L 51/05 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés au redressement, à l'amplification, à la génération d'oscillations ou à la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; Condensateurs ou résistances à l'état solide, ayant au moins une barrière de potentiel ou une barrière de surface
• H01L 51/30 - Emploi de matériaux spécifiés
• H01L 51/40 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives

Abrégé

A working fluid containing CO2 comprised of a molecule with a small ratio of specific heat as a main component is expanded in a gas turbine (4). An exhaust gas having a high temperature can be obtained, even if a pressure changes between the inlet side and the outlet side of the gas turbine (4), by suppressing the lowering of the temperature change. The heat efficiency can be improved without lowering the output by increasing the difference between the temperature of the working fluid at the outlet side of a compressor (2) and the temperature of the exhaust gas at the outlet side of the gas turbine (4), thereby enhancing the regeneration effect.

Classes IPC  ?

• F02C 3/34 - Ensembles fonctionnels de turbines à gaz caractérisés par l'utilisation de produits de combustion comme fluide de travail avec recyclage d'une partie du fluide de travail, c.-à-d. cycles semi-fermés comportant des produits de combustion dans la partie fermée du cycle
• F01K 23/10 - Ensembles fonctionnels caractérisés par plus d'une machine motrice fournissant de l'énergie à l'extérieur de l'ensemble, ces machines motrices étant entraînées par des fluides différents les cycles de ces machines motrices étant couplés thermiquement la chaleur de combustion provenant de l'un des cycles chauffant le fluide dans un autre cycle le fluide à la sortie de l'un des cycles chauffant le fluide dans un autre cycle
• F02C 3/28 - Ensembles fonctionnels de turbines à gaz caractérisés par l'utilisation de produits de combustion comme fluide de travail utilisant un combustible, un oxydant ou un fluide de dilution particulier pour produire les produits de combustion le combustible ou l'oxydant étant solide ou pulvérulent, p. ex. mélangé avec un liquide ou en suspension utilisant un générateur de gaz séparé pour gazéifier le combustible avant la combustion
• F02C 3/30 - Addition d'eau, de vapeur ou d'autres fluides aux composants combustibles ou au fluide de travail avant l'échappement de la turbine
• F02C 6/18 - Utilisation de la chaleur perdue dans les ensembles fonctionnels de turbines à gaz à l'extérieur des ensembles eux-mêmes, p. ex. ensembles fonctionnels de chauffage à turbine à gaz
• F02C 7/08 - Chauffage de l'air d'alimentation avant la combustion, p. ex. par les gaz d'échappement

Abrégé

Provided is an epitaxial SiC single crystal substrate, which includes a SiC single crystal wafer whose main plane is a c-plane or a plane obtained by inclining the c-plane at an inclination angle of more than 0 degree but not more than 10 degrees, and a SiC epitaxial film formed on the main plane of the SiC single crystal wafer. The dislocation row density of penetrating blade-like dislocation rows formed on the SiC epitaxial film is 10 rows/cm2 or less.

Classes IPC  ?

• C30B 29/36 - Carbures
• C23C 16/42 - Siliciures
• C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique

Abrégé

The object is to provide: an extract of a red alga belonging to Laurencia sp. with an organic solvent; a compound isolated and identified from the extract; and an agent for preventing the settlement of barnacle, which comprises the extract or the compound. Thus, disclosed is an agent for preventing the settlement of barnacle, which comprises at least one component selected from the group consisting of an extract of a red alga belonging to Laurencia sp. with an organic solvent, laurencin, thyrsiferol, magireol A, omaezallene and hachijojimallene A.

Classes IPC  ?

• A01N 65/00 - Biocides, produits repoussant ou attirant les animaux nuisibles, ou régulateurs de croissance des végétaux contenant du matériel provenant d'algues, de lichens, de bryophytes, de champignons multicellulaires ou de plantes, ou leurs extraits
• A01N 25/04 - Dispersions ou gels
• A01N 37/02 - Acides carboxyliques saturés ou leurs thio-analoguesLeurs dérivés
• A01N 43/08 - Biocides, produits repoussant ou attirant les animaux nuisibles, ou régulateurs de croissance des végétaux, contenant des composés hétérocycliques comportant des cycles avec un ou plusieurs atomes d'oxygène ou de soufre comme uniques hétéro-atomes du cycle avec un hétéro-atome des cycles à cinq chaînons avec l'oxygène comme hétéro-atome du cycle
• A01N 43/90 - Biocides, produits repoussant ou attirant les animaux nuisibles, ou régulateurs de croissance des végétaux, contenant des composés hétérocycliques comportant plusieurs hétérocycles déterminants condensés entre eux ou avec un système carbocyclique commun
• A01P 17/00 - Répulsifs des animaux nuisibles
• C07D 307/20 - Atomes d'oxygène
• C07D 493/04 - Systèmes condensés en ortho

Abrégé

A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive.

Classes IPC  ?

• H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions

Abrégé

A dehydration system for water-containing substances which comprises a well for dehydration system having a contact zone for bringing a water-containing substance into contact with dimethyl ether, an injection pipe for dimethyl ether and an injection pipe for a water-containing substance, both of which are each connected to the well and open in the contact zone, an exhaust port for discharging dimethyl ether/water-containing substance after contact which opens approximately at the upper end of the contact zone of the well, and a separator for the separation of dimethyl ether from the resulting water-containing substance which is connected tothe well by the exhaust port.

Classes IPC  ?

• B01D 11/02 - Extraction par solvants de solides
• B09B 5/00 - Opérations non couvertes par une seule autre sous-classe ou par un seul autre groupe de la présente sous-classe
• B09C 1/00 - Régénération de sols pollués
• C02F 11/12 - Traitement des boues d'égoutDispositifs à cet effet par déshydratation, séchage ou épaississement
• C10L 9/00 - Traitement des combustibles solides en vue d'améliorer leur combustion
• F23K 1/00 - Préparation du combustible en morceau ou pulvérulent en l'état où il est introduit dans l'appareil à combustion
• F26B 5/16 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par contact avec des corps absorbants ou adsorbants, p. ex. avec un moule absorbantProcédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par mélange avec des matériaux absorbants ou adsorbants

Abrégé

A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and a SiC semiconductor device fabricated by the method. The method for improving the quality of a SiC layer by eliminating or reducing some carrier trapping centers includes the steps of: (a) carrying out ion implantation of carbon atom interstitials (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. The SiC semiconductor device is fabricated by the method.

Classes IPC  ?

• H01L 31/0312 - Matériaux inorganiques comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIVBIV, p.ex. SiC

Abrégé

A gasification equipment with gasification furnace that realizes maintaining of high cool gas efficiency and suppression of temperature rise of gasification gas and suppression of ash sticking. A portion of CO2 gas separated from an exhaust from power generation plant is recovered and compressed by means of a CO2 compressor (25). The compressed CO2 gas is used for delivery of coal (dust coal). The CO2 gas together with dust coal is fed into a gasification furnace to thereby attain acceleration of the formation of CO by an endothermic reaction between C and CO2 and suppression of any temperature rise within a coal gasification furnace (15). Thus, a gasification gas is obtained.

Classes IPC  ?

• C10J 3/46 - Gazéification des combustibles granuleux ou pulvérulents en suspension
• H01M 8/00 - Éléments à combustibleLeur fabrication
• H01M 8/06 - Combinaison d’éléments à combustible avec des moyens de production de réactifs ou pour le traitement de résidus

Abrégé

Provided is a mesa-type silicon carbide zener diode which has a large current capacity without concentrating electric field to a mesa end section on a pn junction interface. The silicon carbide zener diode is a bipolar semiconductor device having a mesa structure, and in the bipolar semiconductor device, a first conductivity type silicon carbide conductive layer is formed on a first conductivity type silicon carbide single crystal substrate, and a second conductivity type silicon carbide conductive layer is formed on the first conductivity type silicon carbide conductive layer. When a reverse direction voltage is applied, a depletion layer formed on the junction interface of the first conductivity type silicon carbide conductive layer and the second conductivity type silicon carbide conductive layer does not reach a mesa corner section formed on the first conductivity type silicon carbide conductive layer.

Classes IPC  ?

• H01L 29/866 - Diodes Zener
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/861 - Diodes

Abrégé

A method of sulfide corrosion prevention by which a base is protected from sulfide corrosion; and a high-temperature member which has excellent resistance to sulfide corrosion. Also provided is a method of repairing a cracked heat-transfer tube which comprises: forming a silicon oxide layer on the surface of the base; applying a titanium-containing coating fluid containing titanium metal or a titanium compound to the silicon oxide layer and thermally oxidizing the coating to form a first titanium oxide layer; forming a carbon layer on the first titanium oxide layer; and applying a titanium-containing coating fluid to the carbon layer and thermally oxidizing the coating to form a second titanium oxide layer, whereby the base is protected or repaired with the silicon oxide layer, first titanium oxide layer, carbon layer, and second titanium oxide layer.

Classes IPC  ?

• C23C 18/12 - Revêtement chimique par décomposition soit de composés liquides, soit de solutions des composés constituant le revêtement, ne laissant pas de produits de réaction du matériau de la surface dans le revêtementDépôt par contact par décomposition thermique caractérisée par le dépôt sur des matériaux inorganiques, autres que des matériaux métalliques
• B05D 5/00 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers
• C23C 20/08 - Revêtement avec des matériaux inorganiques autres que des matériaux métalliques avec des composés, des mélanges ou des solutions solides, p. ex. borures, carbures, nitrures
• C23C 28/04 - Revêtements uniquement de matériaux inorganiques non métalliques

Abrégé

Means for energy saving is provided in the disposal of sewage sludge. That is, there is provided a hydrous matter treating system characterized by including a dehydration vessel designed so as to bring a substance being gaseous in ordinary temperature/ordinary pressure conditions and having been liquefied into contact with a hydrous matter to thereby realize separation into the resultant substance and a liquid phase containing water derived from the hydrous matter; an evaporator for vaporization of the substance being gaseous in ordinary temperature/ordinary pressure conditions from the liquid phase; a separator for separation of the gas of vaporized substance from drainage; a condenser for condensation of the gas into a liquefied matter; two or more external heat sources selected from among atmosphere, sewage, hot drainage and groundwater; an external heat temperature detector capable of detecting the temperature of external heat of each of the external heat sources; and external heat supply destination control means capable of identifying external heat source (A) and external heat source (B) on the basis of the temperature of external heat detected by the external heat temperature detector and controlling the supply destination of external heat of the external heat source (A) to the evaporator while controlling the supply destination of external heat of the external heat source (B) to the condenser.

Classes IPC  ?

• C02F 11/12 - Traitement des boues d'égoutDispositifs à cet effet par déshydratation, séchage ou épaississement
• C02F 11/00 - Traitement des boues d'égoutDispositifs à cet effet

Abrégé

Reaction of coal is performed in coal gasification furnace (22) to thereby produce coal gasification gas. The coal gasification gas is cooled by gas cooler (23), and the cooled gas is passed through porous filter (24) into desulfurizer (25) for desulfurization treatment to thereby produce a CO-gas-containing gas as an anode gas. The CO-gas-containing gas is subjected to exothermic reaction into H2 and CO2 by means of shift reactor (26), and the anode gas containing H2 is fed to anode (7) of MCFC2. Accordingly, in the condition of absence of extra heat source and heat exchange source, desired anode gas is obtained from the coal gasification gas, and in the condition of inhibition of heat buildup of MCFC2 and maintaining of performance thereof, consideration is given to reduction of CO2. Thus, there is provided a power generating installation equipped with MCFC2 capable of using a coal gasification gas substantially containing CO gas.

Classes IPC  ?

• H01M 8/06 - Combinaison d’éléments à combustible avec des moyens de production de réactifs ou pour le traitement de résidus
• H01M 8/04 - Dispositions auxiliaires, p. ex. pour la commande de la pression ou pour la circulation des fluides

Abrégé

The invention aims at providing a means which enables efficient treatment of water-containing substance and by which water-containing substance can be converted into a material reusable as resources. A process for the treatment of water-containing substance, characterized by comprising the contact step (A) of bringing a matter which is gaseous under standard temperature and pressure conditions in the form of a liquid into contact with a water-containing substance, the solid/liquid separation step (B) of subjecting the substance treated in the step (A) to solid/liquid separation to recover a liquid layer, the vaporization/extraction step (C) of extracting at least part of the matter which is gaseous under standard temperature and pressure conditions in the form of a gas from the liquid layer obtained in the step (B), and the liquid/liquid separation step (D) of subjecting the resulting liquid layer obtained the step (C) to liquid/liquid separation to take out a lower layer; and equipment for the treatment of water-containing substance.

Classes IPC  ?

• B01D 12/00 - Déplacement d'un liquide au moyen d'un autre liquide, p. ex. en retirant le liquide de solides humides, ou de dispersions de liquides, ou de solides se trouvant dans des liquides
• B01D 5/00 - Condensation de vapeursRécupération de solvants volatils par condensation
• B09B 3/00 - Destruction de déchets solides ou transformation de déchets solides en quelque chose d'utile ou d'inoffensif
• B09C 1/02 - Extraction au moyen de liquides, p. ex. lavage, lixiviation
• B09C 1/08 - Régénération de sols pollués par des procédés chimiques
• C02F 11/00 - Traitement des boues d'égoutDispositifs à cet effet
• C02F 11/12 - Traitement des boues d'égoutDispositifs à cet effet par déshydratation, séchage ou épaississement

Abrégé

[PROBLEMS] To provide a bipolar semiconductor device having high zener voltage accuracy within a wide zener voltage range (for instance 10-500V). [MEANS FOR SOLVING PROBLEMS] Provided is a bipolar semiconductor device having a mesa structure. In the bipolar semiconductor device, a first conductivity type silicon carbide single crystal substrate, a first conductivity type silicon carbide conductive layer, a second conductivity type heavily doped layer and a second conductivity type silicon carbide conductive layer are laminated in this order.

Classes IPC  ?

• H01L 29/866 - Diodes Zener
• H01L 21/329 - Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type bipolaire, p.ex. diodes, transistors, thyristors les dispositifs comportant une ou deux électrodes, p.ex. diodes
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/861 - Diodes

Abrégé

Disclosed is a technique for deodorizing a sewage sludge satisfactorily. Specifically disclosed is a method for deodorizing a sewage sludge, which comprises the steps of contacting the sewage sludge with a liquefied product of a substance which is in a gaseous state under ambient temperature/ambient pressure conditions and vaporizing the substance. In the method, the substance which is in a gaseous state under ambient temperature/ambient pressure conditions may be a substance showing a gaseous state at 25˚C and 1 atm. In the method, the substance which is in a gaseous state under ambient temperature/ambient pressure conditions may be a substance selected from dimethyl ether, ethyl methyl ether, formaldehyde, ketene, acetaldehyde, butane and propane or a mixture of two or more of them. Also specifically disclosed is a deodorizing apparatus for achieving the deodorizing method.

Classes IPC  ?

• C02F 11/00 - Traitement des boues d'égoutDispositifs à cet effet

Abrégé

A bipolar semiconductor device having a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate, in which electrons and holes are recombined during conduction in the silicon carbide epitaxial film and expansion of lamination defect area caused by continuous conduction is suppressed. In an operating method of a bipolar semiconductor device, a current is passed through the SiC bipolar semiconductor device while maintaining the temperature environment at 350°C or above.

Classes IPC  ?

• H01L 29/66 - Types de dispositifs semi-conducteurs
• H01L 29/74 - Dispositifs du type thyristor, p.ex. avec un fonctionnement par régénération à quatre zones
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/861 - Diodes

Abrégé

In a silicon carbide bipolar semiconductor device, it is intended to inhibit generation of stacking fault, and extension of stacking fault area, attributed to continuation of power distribution. At least surface layer (4) of high seed defect density is removed from first-conductivity-type silicon carbide epitaxial film (2) having been grown from the surface of first-conductivity-type silicon carbide single crystal substrate (1) according to chemical vapor phase deposition technique. Thereafter, second-conductivity-type silicon carbide epitaxial film (3) is grown from the surface of silicon carbide epitaxial film (2) devoid of the surface layer (4). Further, after growing of the second-conductivity-type silicon carbide epitaxial film (3), at least surface layer (6) of high seed defect density is removed from the second-conductivity-type silicon carbide epitaxial film (3).

Classes IPC  ?

• H01L 29/161 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée comprenant plusieurs des éléments prévus en
• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
• H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
• H01L 29/74 - Dispositifs du type thyristor, p.ex. avec un fonctionnement par régénération à quatre zones
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/861 - Diodes

Abrégé

A bipolar semiconductor device having a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate in which electrons and holes are recombined during conduction in the silicon carbide epitaxial film, lamination defect area expanded through current conduction is contracted, and increased forward voltage of the bipolar semiconductor device is recovered. The silicon carbide bipolar semiconductor device, in which lamination defect area is expanded through current conduction and forward voltage is increased, is heated at a temperature of 350°C or above.

Classes IPC  ?

• H01L 29/66 - Types de dispositifs semi-conducteurs
• H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
• H01L 29/861 - Diodes

Abrégé

It is an object to provide a method for improving the quality of an SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and an SiC semiconductor device fabricated by the method. (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. A semiconductor device according to the invention is fabricated by the method.

Classes IPC  ?

• H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions

Abrégé

An organic electrolyte battery (10) including positive electrode material (2) and negative electrode material (4) and, interposed therebetween, organic electrolyte (6), wherein positive electrode active material particles (8) as a constituent of the positive electrode have surfaces at least partially coated with attachment (12) with electronic conductance and ionic conductance not easily oxidized even when supplied with oxygen from the positive electrode active material. The above attachment (12) is composed of microparticles of inorganic solid electrolyte with ionic conductance (14) and microparticles of conductive material with electronic conductance (16).

Classes IPC  ?

• H01M 4/04 - Procédés de fabrication en général
• H01M 4/13 - Électrodes pour accumulateurs à électrolyte non aqueux, p. ex. pour accumulateurs au lithiumLeurs procédés de fabrication
• H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
• H01M 6/18 - Éléments avec électrolytes non aqueux avec électrolyte solide

Abrégé

[PROBLEMS] To easily and accurately detect a position, a depth, or a height of a damaged portion such as a cracked surface and an corroded portion and a micro cracking near the surface layer of a thick object. [MEANS FOR SOLVING PROBLEMS] An ultrasonic wave (16) is introduced from an oblique direction to an object (6) to be inspected so as to detect diffractive waves (17) generated at the end of a damaged portion (20) in the object (6), above the damaged portion. The position of the end of the damaged portion (20) from a surface (13) of the object (6) is obtained by using the trigonometric measurement based on an all-beam path (Wt) of a component (18) propagating directly above the damaged portion (20) among the diffractive waves, from the incident position via the damaged portion, and an interval (S) between the incident position and the detection position of the ultrasonic wave, or a propagation time difference (tt – ts) between the reception of a surface wave (15) reflecting these relationships and a diffractive wave (18) propagating directly above the damaged portion.

Classes IPC  ?

• G01N 29/44 - Traitement du signal de réponse détecté

Abrégé

One of a plurality of ultrasonic flaw detection methods is selected with a simple operation and executed. A switching circuit (3) is used for arbitrarily switching over an angle probe (1) and a normal probe (2) with respect to a transmitting section (T) and a receiving section (R) of a flaw detector. The switching circuit (3) enables selection of one of an angle flaw detection mode where only the angle probe performs transmission/reception of an ultrasonic beam, a SPOD mode where the angle probe transmits an ultrasonic beam and the normal probe receives the diffracted waves, a flaw detection mode where an angle flaw detection method in which the angle probe transmits an ultrasonic beam and receives the reflected waves and the normal probe receives the diffracted waves and a SPOD method are combined, and a normal flaw detection mode where the normal probe transmits/receives an ultrasonic beam.

Classes IPC  ?

• G01N 29/04 - Analyse de solides

Abrégé

A method of removing ice, and ice removing system, which irrespective of the form of ice contained or the content thereof, are applicable to various ice-containing materials and attain efficient ice removal in high recovery ratio within a short period of time. There is provided a method of removing ice from an ice-containing material with the use of a liquefied substance, characterized by including the step (1) of bringing into contact with an ice-containing material a substance resulting from liquefaction of a substance being a gas under ordinary temperature ordinary pressure conditions so as to cause the liquefied substance to dissolve theice of the ice-containing material, thereby obtaining a liquefied substance of high water content, and the step (2) of vaporizing the substance being a gas under ordinary temperature ordinary pressure conditions contained in the liquefied substance of high water content to thereby separate the substance in the form of a gas from the water. Further, there is provided a system for removing ice from ice-containing material with the use of the above substance, characterized by including, connected in series, a compressor, condenser, dehydrator, evaporator and separator.

Classes IPC  ?

• B01D 11/02 - Extraction par solvants de solides
• F26B 5/00 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur

Abrégé

Provided is a silicon carbide Schottky junction type semiconductor element, which can control a Schottky barrier height to be at a desired value within a range where a power loss is minimum without increasing an n factor, and uses a Ta electrode as a Schottky electrode. A method for manufacturing such semiconductor element is also provided. In the method for manufacturing the silicon carbide Schottky junction type semiconductor element, Ta is deposited on the crystal plane of an n-type silicon carbide epitaxial layer, which is inclined from a (000-1)C plane within a range of 0°-10°, and then, heat treatment is performed within a temperature range of 300°C-1,200°C, and the Schottky electrode is formed.

Classes IPC  ?

• H01L 29/47 - Electrodes à barrière de Schottky
• H01L 21/338 - Transistors à effet de champ à grille Schottky
• H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky
• H01L 29/872 - Diodes Schottky

Abrégé

A fluid damper which is capable of operating while automatically changing the damping force according to the movement of a piston without installing a sensor detecting the displacement of the piston and a controller controlling the supply of electric power. The fluid damper, in which the damping force is automatically changed according to the movement of the piston, comprises a fluid (8) having magnetism, a piston (2) of magnetic material, a cylinder (3) sealing the fluid (8) with magnetism and storing the piston (2), a piston rod (4) passed through the cylinder (3) and supporting the piston (2), magnetic field generating device (6) installed on the outside of the cylinder (3), first yoke member (5) disposed around the cylinder (3), and second yoke member (7) disposed around the piston rod (4) and on the outside of the cylinder (3). Thereby, a magnetic circuit can be partially formed.

Classes IPC  ?

• F16F 9/53 - Moyens pour le réglage des caractéristiques des amortisseurs en faisant varier la viscosité du fluide, p. ex. électromagnétiques
• F16F 9/20 - Dispositifs à un ou plusieurs organes, p. ex. des pistons, des aubes, se déplaçant en va-et-vient dans des chambres et utilisant un effet d'étranglement comportant uniquement un déplacement rectiligne des parties travaillant avec un cylindre fermé et un piston déterminant, à l’intérieur de ce cylindre, plusieurs espaces de travail avec tige du piston traversant les deux extrémités du cylindre

Abrégé

A SiC bipolar semiconductor device having a mesa shape wherein a first conductivity type SiC drift layer and a second conductivity type SiC charge injection layer are epitaxially grown on the surface of a SiC single crystal substrate. In the SiC bipolar semiconductor device, generation and area increase of lamination defects are suppressed, and increase of a forward voltage is suppressed. Furthermore, withstand voltage characteristics are improved in the status where a reverse voltage is applied. On a mesa wall section or on the mesa wall section and a mesa peripheral section, a conduction deterioration preventing layer is formed for spatially separating the surface from a pn junction interface. In one embodiment, the conduction deterioration preventing layer is composed of a second conductivity type silicon carbide low resistance layer which becomes equipotential when a reverse voltage is applied. In another embodiment, the conduction deterioration preventing layer is composed of a second conductivity type silicon carbide conductive layer, and a metal film which becomes equipotential when a reverse voltage is applied is formed on the surface of the conduction deterioration preventing layer. Furthermore, in another embodiment, the conduction deterioration preventing layer is composed of a high resistance amorphous layer.

Classes IPC  ?

• H01L 29/861 - Diodes
• H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter

Abrégé

A method of forming a thick film of oxide superconductor, in which with respect to a Bi2223 thick film formed on a treatment object, without lowering of Jc, the adherence to the treatment object is increased so as to attain an enlargement of the sectional area of the Bi2223 thick film. A mixture of Pb and composite oxide with Bi2212 formulation is applied to a surface of treatment object, and fired to thereby form a first thick film. On this first thick film, there is formed a thick film of oxide superconductor represented by the general formula: (Bi,Pb)2+aSr2Ca2Cu3O2 (provided that -0.1≤a≤0.5).

Classes IPC  ?

• C01G 29/00 - Composés du bismuth
• C01G 1/00 - Méthodes de préparation des composés des métaux non couverts en , , , , en général
• H01B 12/06 - Conducteurs, câbles ou lignes de transmission supraconducteurs ou hyperconducteurs caractérisés par leurs formes à couches ou fils déposés sur des supports ou des noyaux
• H01B 13/00 - Appareils ou procédés spécialement adaptés à la fabrication de conducteurs ou câbles

Abrégé

An intermediate metal film is provided between a Schottky electrode and a pad electrode. The Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is higher than or equal to the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. The current conducted through a pinhole is thereby suppressed even when the Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is lower than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film.

Classes IPC  ?

• H01L 29/47 - Electrodes à barrière de Schottky
• H01L 29/872 - Diodes Schottky

Abrégé

A multifunctional material having a carbon-doped titanium oxide layer, which has carbon doped in the state of Ti—C bonds, is excellent in durability (high hardness, scratch resistance, wear resistance, chemical resistance, heat resistance) and functions as a visible light responding photocatalyst, is provided. The multifunctional material of the present invention is obtained, for example, by heat-treating the surface of a substrate, which has at least a surface layer comprising titanium, a titanium alloy, a titanium alloy oxide, or titanium oxide, in a combustion gas atmosphere of a gas consisting essentially of a hydrocarbon such that the surface temperature of the substrate is 900 to 1,500° C.; or by directly striking a combustion flame of a gas consisting essentially of a hydrocarbon, against the surface of the substrate for heat treatment such that the surface temperature of the substrate is 900 to 1,500° C.

Classes IPC  ?

• B32B 9/00 - Produits stratifiés composés essentiellement d'une substance particulière non couverte par les groupes

Abrégé

An organic electrolyte battery that through inhibition of any oxidative
decomposition of organic electrolyte under high voltage, attains an
enhancement of
cycle characteristics and is further capable of attaining a realization of
high energy
density. There is provided organic electrolyte battery (10) comprising
positive
electrode material (2) and negative electrode material (4) and, interposed
therebetween, organic electrolyte (6), wherein positive electrode active
material
particles (8) as a constituent of the positive electrode have surfaces at
least partially
coated with attachment (12) with electronic conductance and ionic conductance
not
easily oxidized even when supplied with oxygen from the positive electrode
active
material. The above attachment (12) is composed of microparticles of inorganic
solid
electrolyte with ionic conductance (14) and microparticles of conductive
material with
electronic conductance (16). In a polymer lithium secondary battery, the
microparticles of inorganic solid electrolyte consist of any one of lithium-
containing
phosphates, silicates, borates, sulfates, aluminates, etc., or a mixture
thereof.

Classes IPC  ?

• H01M 4/02 - Électrodes composées d'un ou comprenant un matériau actif
• H01M 4/04 - Procédés de fabrication en général
• H01M 4/139 - Procédés de fabrication
• H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
• H01M 10/052 - Accumulateurs au lithium
• H01M 10/0562 - Matériaux solides
• H01M 10/0565 - Matériaux polymères, p. ex. du type gel ou du type solide
• H01M 10/36 - Accumulateurs non prévus dans les groupes

Abrégé

A multi-functional material having a carbon doped titanium oxide layer which
contains the carbon being doped in the state of a Ti-C bond, and is excellent
in durability (high hardness, scratch resistance, abrasion resistance,
chemical resistance, heat resistance) and also functions as a photocatalyst
being responsive to a visible light; and a method for producing the multi-
functional material, which comprises subjecting the surface of a substrate at
least the surface layer of which comprises titanium, a titanium alloy, a
titanium alloy oxide or a titanium oxide to a heat treatment in an atmosphere
of a combustion gas from a gas containing a hydrocarbon as a primary component
or an atmosphere of a gas containing a hydrocarbon as a primary component, so
as for the surface to have a temperature of 900 to 1500~C, or exposing said
surface of the substrate directly to a combustion flame from a gas containing
a hydrocarbon as a primary component to treat the surface with heat so as for
the surface to have a temperature of 900 to 1500~C.

Classes IPC  ?

• C22C 14/00 - Alliages à base de titane
• C23C 8/28 - Traitement par plusieurs éléments en une seule étape

Abrégé

Methods and systems for intraoperatively determining alignment parameters of a spine during a spinal surgical procedure are disclosed herein. In some embodiments, a method of intraoperatively determining an alignment parameter of a spine during a surgical procedure includes receiving initial image data of the spine including multiple vertebrae and identifying a geometric feature associated with each vertebra in the initial image data. The geometric features each have a pose in the initial image data and characterize a three-dimensional (3D) shape of the associated vertebra. The method further comprises receiving intraoperative image data of the spine and registering the initial image data to the intraoperative image data. The method can then update the pose of each geometric feature based on the registration and the intraoperative image data, and determine the alignment parameter based on the updated poses of the geometric features associated with two or more of the vertebrae.

Classes IPC  ?

• H01M 10/54 - Récupération des parties utiles des accumulateurs usagés