A resist underlayer film-forming composition for EB or EUV lithography, the resist underlayer film-forming composition including: a hydroxy group-containing polymer; a photoacid generator containing a hydroxy group in a cationic part; a crosslinking agent that can react with a hydroxy group; and a solvent.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C09D 163/00 - Coating compositions based on epoxy resinsCoating compositions based on derivatives of epoxy resins
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A composition for forming a resist underlayer film for use in EB or EUV lithography, the composition containing a film-forming component and a solvent, wherein the film-forming component contains 20 mass % or more of a specific structure-containing component containing at least either of a first structure containing an aromatic ring and a second structure containing a nitrogen atom, the first structure contains a group represented by formula (1) below directly bonded to the aromatic ring, and the second structure contains a group represented by formula (1) below directly bonded to the nitrogen atom.
A composition for forming a resist underlayer film for use in EB or EUV lithography, the composition containing a film-forming component and a solvent, wherein the film-forming component contains 20 mass % or more of a specific structure-containing component containing at least either of a first structure containing an aromatic ring and a second structure containing a nitrogen atom, the first structure contains a group represented by formula (1) below directly bonded to the aromatic ring, and the second structure contains a group represented by formula (1) below directly bonded to the nitrogen atom.
A composition for forming a resist underlayer film for use in EB or EUV lithography, the composition containing a film-forming component and a solvent, wherein the film-forming component contains 20 mass % or more of a specific structure-containing component containing at least either of a first structure containing an aromatic ring and a second structure containing a nitrogen atom, the first structure contains a group represented by formula (1) below directly bonded to the aromatic ring, and the second structure contains a group represented by formula (1) below directly bonded to the nitrogen atom.
In formula (1), R1 represents an alkylene group having 1 to 6 carbon atoms, R2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an alkoxyalkyl group having 2 to 10 carbon atoms in total, and * represents a bond.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C09D 139/04 - Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 7/095 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
G03F 7/36 - Imagewise removal not covered by groups , e.g. using gas streams, using plasma
A method for producing a laminate having a surface-modified layer and a semiconductor substrate includes: a first step of applying a surface modifier containing a polymer and a solvent to the semiconductor substrate, and then baking the semiconductor substrate to cross-link the polymer and to form a surface-modified layer precursor; and a second step of bringing the surface-modified layer precursor into contact with a thinning liquid to thin the surface-modified layer precursor and to form a surface-modified layer having a film thickness of 5 nm or less.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
A release agent composition for light irradiation release for forming a release agent layer of a laminate which includes a semiconductor substrate or an electronic device layer, a light-transmissive support substrate, and a release agent layer provided between the semiconductor substrate or the electronic device layer and the support substrate, in which the electronic device layer includes a plurality of semiconductor chip substrates and a sealing resin disposed between the semiconductor chip substrates, and which is used for releasing the semiconductor substrate or the electronic device layer from the support substrate after the release agent layer absorbs light irradiated from the support substrate side, in which the release agent composition contains a light-absorbing compound that contributes to making the semiconductor substrate or the electronic device layer and the support substrate easily released by absorbing the light, and a solvent, and the solvent contains water.
C09J 7/40 - Adhesives in the form of films or foils characterised by release liners
B32B 7/06 - Interconnection of layers permitting easy separation
B32B 9/00 - Layered products essentially comprising a particular substance not covered by groups
B32B 9/04 - Layered products essentially comprising a particular substance not covered by groups comprising such substance as the main or only constituent of a layer, next to another layer of a specific substance
B32B 17/06 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
The present invention addresses the problem of providing a composition for pattern formation that makes it possible to form a film which has a large thickness and which has a low refractive index. Said problem is solved by a composition for pattern formation comprising at least a triazine-ring-containing polymer and hollow silica particles, the outer shell of which has therein a space, wherein the triazine-ring-containing polymer is characterized by including a repeating unit structure represented by formula (1) and by having at least one triazine ring terminal, at least part of which is capped by an amino group having a crosslinking group, and the hollow silica particles are coated with at least one silane compound selected from the group consisting of formula (26): R103aaSi(R1044-a4-a, formula (27): [R105bbSi(R1063-b2cc, and formula (28): R107ddSi(R1084-d4-d.
C08G 73/06 - Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromoleculePolyhydrazidesPolyamide acids or similar polyimide precursors
G03F 7/032 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
The present invention addresses the problem of providing a solventless composition that makes it possible to increase film thickness and form a cured film having a low refractive index. Said problem is solved by a solvent-free composition that contains a triazine ring-containing polymer, a crosslinking agent, and hollow silica particles having a space inside the outer shell, and does not contain an organic solvent. The triazine ring-containing polymer contains a repeating unit structure represented by formula (1), has at least one triazine ring terminal, and at least a part of the triazine ring terminal is sealed with an amino group having a crosslinking group. The hollow silica particles are coated with at least one selected from the group consisting of silane compounds represented by formula (44), formula (45), and formula (46). Formula (44): R106aaSi(R1074-a4-a; Formula (45): [R108bbSi(R1093-b2cc; Formula (46): R110ddSi(R1114-d4-d
2233 relative to the mass of the hollow silica particles, and the average particle diameter as determined by dynamic light scattering is 20-150 nm. Component (B): A dispersion medium which contains one or more substances selected from among an organic solvent, a reactive monomer, and a polymer.
[Problem] To provide hollow silica particles that have high dispersion stability in a medium and are free from concerns such as outflow of alkali metals. [Solution] Provided are an aluminum atom-containing hollow silica sol, in which the amount of sulfuric acid contained in the hollow silica sol is 1 ppm to 150 ppm, and a method for producing the same.
2233, and the methanol content with respect to the mass of the silica particles is less than 800 ppm; and an organosol containing said silica particles.
The present invention provides, in order to form a good colored resist pattern: a composition for forming a resist underlayer film for the formation of a resist underlayer film that is disposed between a substrate and a colored resist film; a resist underlayer film which is formed using the composition for forming a resist underlayer film; and a laminated body using the resist underlayer film, a method for forming a pattern of a colored resist, and provides a self-luminous display element and a liquid crystal element. The present invention specifically provides a composition for forming a resist underlayer film for the formation of a resist underlayer film that is disposed between a substrate and a colored resist film, the composition for forming a resist underlayer film containing an alkali-soluble resin and a solvent. The resist underlayer film, which is formed by baking the composition for forming a resist underlayer film, exhibits solvent resistance to a solvent that is contained in a resist material for forming the colored resist film, and exhibits solubility in an alkali developer solution for the colored resist film.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
A composition for forming a protective film against a wet etching solution for a semiconductor, the composition containing: (A) a compound or polymer having a reactive group capable of undergoing a crosslinking reaction in the presence of a curing agent; (B) a curing agent; (C) a β-dicarbonyl compound; and (D) a solvent.
C08F 20/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
C08F 283/00 - Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass
An adhesive composition that includes a light-absorbing compound that contributes to facilitating release of a semiconductor substrate or an electronic device layer and a support substrate by absorbing the light; an organic resin; and an organic solvent, wherein the light-absorbing compound is a compound having a structure selected from a benzophenone structure, a diphenylamine structure, a diphenyl sulfoxide structure, a diphenyl sulfone structure, an azobenzene structure, a dibenzofuran structure, a fluorenone structure, a carbazole structure, an anthraquinone structure, a 9,9-diphenyl-9H-fluorene structure, a naphthalene structure, an anthracene structure, a phenanthrene structure, an acridine structure, a pyrene structure, a phenylbenzotriazole structure, and a structure derived from cinnamic acid, or a polyphenol-based compound.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C09J 9/00 - Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
As a charge transport composition which is suitable for the formation of a charge transport thin film of a photoelectric conversion element, and in particular, which is capable of significantly improving the photoelectric conversion efficiency of an obtained element when used as a hole collecting layer of an inverse lamination type perovskite solar cell, the present invention provides a charge transport composition for forming a charge transport thin film of an organic photoelectric conversion element, the composition comprising a charge transport substance, a crosslinking agent, and an organic solvent. The charge transport substance comprises at least one polyimide-based polymer which is selected from the group consisting of polyimide precursors that are each obtained from a tetracarboxylic acid component and a diamine component having any one of the structures represented by formulae (1)-(3), esters of the polyimide precursors, and imidized products of the polyimide precursors. (In the formulae, R1 represents a hydrogen atom or a monovalent organic group. * represents a site bonded to another group. Any hydrogen atom forming the benzene ring may be substituted with a monovalent organic group.)
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/86 - Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
H10K 85/60 - Organic compounds having low molecular weight
15.
COMPOSITION CONTAINING LIPID PEPTIDE AND SUCROSE ESTER
[Problem] To provide a novel composition which contains a lipid peptide and a sucrose ester that comprises a contamination suppressing effect and a penetration enhancing effect. [Solution] This composition contains: a lipid peptide-type compound in which a peptide moiety formed by the repetition of at least two or more identical or different amino acids is bonded to a lipid moiety that is composed of an aliphatic group having 10-24 carbon atoms; a sucrose ester; a 1,2-alkanediol; a fatty acid; and water.
Provided is a liquid crystal light control element using a liquid crystal composition including a liquid crystal and a chiral compound, in which display defects due to alignment defects of the liquid crystal and burn-in defects do not occur even in an environment of prolonged exposure to light irradiation. Provided is a liquid crystal light control element having a variable transmittance in response to voltage application, the liquid crystal light control element being characterized by comprising a pair of substrates provided with electrodes, a liquid crystal layer provided between the substrates and including liquid crystal molecules twist-aligned when a voltage is not applied, and a liquid crystal alignment film that substantially horizontally aligns the liquid crystal molecules in at least one direction between the substrate and the liquid crystal layer, the liquid crystal layer having a liquid crystal composition including liquid crystal molecules having positive dielectric anisotropy and a chiral compound, the liquid crystal alignment film including a polymer having a structure indicated by formula [1]of the following formula [1], and d/p being 1 to 10, where d is the thickness of the liquid crystal layer and p is the chiral pitch of the liquid crystals of the liquid crystal layer. (Each symbol in formula [1] is as defined in the specification.)
G02F 1/1337 - Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
G02F 1/137 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
Provided is a liquid crystal light control element using a liquid crystal composition containing a liquid crystal and a chiral compound, wherein a display defect and a burn-in defect due to an alignment defect of the liquid crystal do not occur even in an environment exposed to light irradiation for a long time. This liquid crystal light control element has a transmittance that is variable in response to voltage application. The liquid crystal light control element is characterized by comprising: a pair of substrates provided with electrodes; a liquid crystal layer provided between the substrates and containing liquid crystal molecules that are twist-aligned when no voltage is applied; and a liquid crystal alignment film for approximately vertically aligning liquid crystal molecules in at least one space between the substrates and the liquid crystal layer, wherein the liquid crystal layer has a liquid crystal composition containing liquid crystal molecules having positive dielectric anisotropy and a chiral compound, the liquid crystal alignment film includes a polymer having a structure of formula [1], and when the thickness of the liquid crystal layer is denoted by d, and the chiral pitch of a liquid crystal of the liquid crystal layer is denoted by p, d/p is 1-10. (Each symbol in formula [1] is as defined in the specification.)
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
G02F 1/1337 - Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
G02F 1/137 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
Provided is a liquid crystal light control element using a liquid crystal composition including a liquid crystal and a chiral compound, in which display defects due to alignment defects of the liquid crystal and burn-in defects do not occur even when the liquid crystal light control element is subjected to prolonged light irradiation. Provided is a liquid crystal light control element having a variable transmittance in response to voltage application, the liquid crystal light control element being characterized by comprising a pair of substrates provided with electrodes, a liquid crystal layer provided between the substrates and including liquid crystal molecules twist-aligned when a voltage is not applied, a liquid crystal alignment film (A) that substantially vertically aligns the liquid crystal between one substrate and the liquid crystal layer, and a liquid crystal alignment film (B) that substantially horizontally aligns the liquid crystal between the liquid crystal layer and the other substrate, the liquid crystal layer including a chiral compound and liquid crystal having positive dielectric anisotropy, the liquid crystal alignment film (A) including a polymer having a structure indicated by formula [1], the liquid crystal alignment film (B) including a polymer having a structure indicated by formula [2], and d/p being 1 to 10, where d is the thickness of the liquid crystal layer and p is the chiral pitch of the liquid crystal of the liquid crystal layer.
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
G02F 1/1337 - Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
G02F 1/137 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
Provided is a charge-transporting composition for forming a charge-transporting thin film for an organic photoelectric conversion element, the charge-transporting composition being ideal for the formation of a charge-transporting thin film for a photoelectric conversion element. In particular, when used as the hole transport layer of an inverted perovskite solar cell, this composition enables large improvement in hole transport layer formability and film stability when the film is left to stand in atmosphere, while maintaining the photoelectric conversion efficiency (PCE) of the resulting element at a high level. The charge-transporting composition comprises a nickel oxide precursor, a polymer compound, and a solvent.
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
C08L 101/00 - Compositions of unspecified macromolecular compounds
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/86 - Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
H10K 71/12 - Deposition of organic active material using liquid deposition, e.g. spin coating
A laminate including an adhesive layer that has both a bonding function and a releasing function in a single layer and can be released through light irradiation, an adhesive composition for forming the releasable adhesive layer, and a method for producing a processed semiconductor substrate using the laminate. The adhesive composition includes an adhesive component and a release agent component, wherein the adhesive component contains a polysiloxane resin, and the release agent component contains a (meth)acrylic polymer including a silicone-based first unit and a light-absorbing structured second unit.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a charge-transporting ink composition for an upper layer of a quantum dot layer, the composition being configured such that: when used to form an upper layer of a quantum dot (QD) layer (light emission layer), the changes in the flatness of the film formed by inkjet deposition can be suppressed, such changes occurring due to the post-deposition time delay; practical charge-transporting properties can be maintained; and photoluminescence (PL) quenching of the quantum dot (QD) layer in the element obtained is not triggered. The composition contains a charge-transporting material and a solvent, where the solvent is a specific solvent having a Balaban index of 3.3 or lower and a molar refractive index of 65 or lower, and also having a boiling point of 180°C or higher.
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 71/12 - Deposition of organic active material using liquid deposition, e.g. spin coating
Provided is a composition for forming an artificial solid electrolyte interphase layer which can be suitably used for forming an artificial solid electrolyte interphase layer constituting a negative electrode of a secondary battery such as an anode-free lithium metal secondary battery. The composition for forming an artificial solid electrolyte interphase layer contains a solvent containing graphene oxide or a salt thereof, an olefin-unsaturated carboxylic acid copolymer or a salt thereof, and water.
A stabilized aqueous active silica solution including at least one stabilizing agent selected from an acid, potassium hydroxide, ammonia and an organic base, whose content is 0.167 to 10% by mass/SiO2 relative to solution. The acid is an inorganic or organic acid. The inorganic acid is sulfuric or nitric acid. The organic acid is citric acid. The base is an amine or quaternary ammonium hydroxide. The viscosity of the solution that has a SiO2 concentration of 2.8 to 3.3% by mass, measured by the Ostwald method at 23° C. within 3 hours after production, is 0.5 to 20 mPa·s. The viscosity of the solution measured after storage at 23° C. for 3 days is higher by 5.0 times or less than that of the solution measured within 3 hours. Also, a silica sol including silica particles having an average primary particle diameter of 5 to 300 nm.
aaaaa) are as defined in the description.) Component (B) is a compound (B) represented by formula (1) (meanings of symbols in formula (1) are as defined in the description).
Provided is an adhesive composition for forming an adhesive layer in a laminate having a first base body that is a semiconductor substrate or an electronic device layer, a second base body that is a support substrate that transmits infrared laser light, and the adhesive layer provided between the first base body and the second base body, the adhesive layer being used in the process in which, after the first base body is processed, the adhesive layer is irradiated with the infrared laser light from the second base body side, and the first base body and the second base body are subsequently separated from each other. The adhesive composition contains an adhesive component having a siloxane bond and a release agent component.
This laminate comprises a first base body that is a semiconductor substrate or an electronic device layer, a second base body that is a support substrate for transmitting an infrared laser, and an adhesive layer and an infrared absorption layer that are provided between the first base body and the second base body.
This composition for forming a coating film for foreign substance removal can form a coating film that can be removed using a remover liquid. The composition contains a film structural component and a solvent, and the film structural component contains a coordination compound.
C09D 201/00 - Coating compositions based on unspecified macromolecular compounds
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
C09D 5/20 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects producedFilling pastes for coatings strippable as coherent films, e.g. temporary coatings strippable as coherent films
C09D 201/02 - Coating compositions based on unspecified macromolecular compounds characterised by the presence of specified groups
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
30.
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This composition for forming a resist underlayer film contains a resin (G) having a composite unit structure, and a solvent, the composite unit structure having a unit structure (A) that has an aromatic ring and a unit structure (B) that has one or more carbon atoms, the resin (G) being obtained by a reaction for generating a covalent bond between a carbon atom constituting the aromatic ring in the unit structure (A) and a carbon atom in the unit structure (B), the unit structure (A) including a unit structure (A-I) that includes a bisphenol skeleton having three or more aromatic hydrocarbon rings, and the unit structure (B) including a unit structure (B-I) that has a quaternary carbon atom to be bonded to the carbon atom constituting the aromatic ring in the unit structure (A).
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
An underlayer film, which is a backed product of a coating film of an underlayer film-forming composition, wherein the underlayer film-forming composition contains a polysiloxane that is a hydrolytic condensate of a hydrolyzable silane, the hydrolyzable silane contains a compound represented by formula (1) and may contain a compound represented by formula (2), the mole fraction of the compound represented by formula (1) in the hydrolyzable silane is 45 mol% or more, and the total mole fraction of the compound represented by formula (1) and the compound represented by formula (2) in the hydrolyzable silane is 65 mol% or more (including the case in which the mole fraction of the compound represented by formula (2) in the hydrolyzable silane is 0 mol%). (In formula (1), Ar represents an aromatic hydrocarbon group which may have a substituent. n represents an integer of 1-3. When n is 1, Rarepresents a single bond or C1-C6 alkylene group. When n is 2 or 3, Rarepresents an (n +1)-valent saturated C1-C6 hydrocarbon group. Each X independently represents a hydrolyzable group. When n is 2 or 3, a plurality of Ar's may be the same or different.) (In formula (2), Rb represents a non-aromatic C1-C6 hydrocarbon group. Each X independently represents a hydrolyzable group.)
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
G03F 7/40 - Treatment after imagewise removal, e.g. baking
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
34.
ADHESIVE COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE
With respect to a laminate having a first substrate that is a semiconductor substrate or an electronic device layer, a second substrate that is an infrared laser-transmissive support substrate, and an adhesive layer provided between the first substrate and the second substrate, this adhesive composition serves to form the adhesive layer used to separate the first substrate and the second substrate after processing of the first substrate and then irradiation of the adhesive layer with the infrared laser from the second substrate side. The adhesive composition contains a siloxane bond-bearing adhesive component, a release agent component, and an infrared absorber.
The present invention provides a laminate comprising: a first base body, which is a semiconductor substrate or an electronic device layer; a second base body, which is a support substrate that allows infrared laser light to be transmitted therethrough; and an infrared-transmissive adhesive layer and an infrared-absorbing layer provided between the first and second base bodies.
Provided is method for manufacturing a laminate, the method including: a first step for coating, onto a semiconductor substrate, a surface modifier containing polysiloxane and a solvent, and then firing the coated semiconductor substrate to crosslink the polysiloxane and thereby obtain a surface-modified layer precursor; and a second step for bringing the surface-modified layer precursor into contact with a thinning solution to thin the surface-modified layer precursor and thereby obtain a surface-modified layer having a film thickness of 5 nm or less. The polysiloxane comprises an aromatic hydrocarbon ring and an RO- group (R representing an alkyl group having 1-6 carbon atoms or an alkoxyalkyl group having a total of 2-6 carbon atoms) bonded to the aromatic hydrocarbon ring. The laminate comprises the surface-modified layer and the semiconductor substrate, and is used in lithography in which a resist that contains an organic resin is used and an unexposed portion of a resist film is subjected to organic solvent development.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
A microorganism according to the present disclosure is a microorganism (accession number: NITE BP-03832) belonging to Bacillus velezensis, a microorganism (accession number: NITE BP-04073) belonging to Bacillus velezensis, a microorganism (accession number: NITE BP-04126) belonging to Bacillus velezensis, or a variant of these having a plant disease prevention effect.
The purpose of the present invention is to provide: a linker agent which contains a specific solvent and a linker compound that enables surface modification of a two-dimensional material, and which has excellent storage stability; a novel linker compound; and a GFET biosensor which is provided with the linker compound. The present invention provides: a linker agent which is characterized by containing a compound of formula (1) (wherein Z, X, A, Y, and B are as described in the claims and the description) and at least one solvent that is selected from the group consisting of ethylene glycol monomethyl ether, propylene glycol monomethyl ether, propylene glycol methyl ether acetate, and ethylene glycol monobutyl ether, and which is also characterized by being a solution; a novel linker compound; and a GFET biosensor which is provided with the linker compound.
C07D 207/46 - Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with hetero atoms directly attached to the ring nitrogen atom
C07D 253/08 - Heterocyclic compounds containing six-membered rings having three nitrogen atoms as the only ring hetero atoms, not provided for by group condensed with carbocyclic rings or ring systems
G01N 27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
G01N 33/551 - ImmunoassayBiospecific binding assayMaterials therefor with an insoluble carrier for immobilising immunochemicals the carrier being inorganic
H10K 10/46 - Field-effect transistors, e.g. organic thin-film transistors [OTFT]
H10K 19/10 - Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group comprising field-effect transistors
Provided is a charge-transporting composition suitable for forming a charge-transporting thin film of a photoelectric conversion element, and capable of significantly improving the photoelectric conversion efficiency and durability of the obtained element, in particular, when used as a hole collection layer of a perovskite-type solar cell. For example, provided is a charge-transporting composition for forming a charge-transporting thin film in an organic photoelectric conversion element, the charge-transporting composition comprising: a charge-transporting substance represented by formula H-1; an electron-accepting dopant substance; and an organic solvent.
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/86 - Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
H10K 85/60 - Organic compounds having low molecular weight
40.
COMPOSITION FOR FORMING PRIMER FILM, LAMINATE, METHOD FOR PRODUCING LAMINATE, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE OR ELECTRONIC DEVICE SUBSTRATE
The present invention provides, for example, a laminate which comprises a support substrate, a semiconductor substrate or an electronic device substrate, and an adhesive layer that is provided between the semiconductor substrate or the electronic device substrate and the support substrate, and with which it is possible to control the separation interface when a semiconductor wafer is separated from the support substrate. This laminate comprises a support substrate, a semiconductor substrate or an electronic device substrate, and an adhesive layer that is provided between the semiconductor substrate or the electronic device substrate and the support substrate, wherein: a primer film is formed on a substrate surface of one of the semiconductor substrate, the electronic device substrate, and the support substrate; and the primer film is formed of a composition for forming a primer film for enhancing the adhesion between a substrate and an adhesive layer that is formed of an adhesive composition which contains an adhesive component that is cured by a hydrosilylation reaction, the composition for forming a primer film containing a component that contributes to the hydrosilylation reaction.
This resist underlayer film-forming composition contains a solvent and a resin (G) having multiple composite unit structures. The composite unit structures include: a unit structure (A) that has a naphthalene ring having one or two phenolic hydroxyl groups; and a unit structure (B) that has one or more carbon atoms. The resin (G) is obtained through a reaction for generating a covalent bond between a carbon atom forming the aromatic ring in the unit structure (A) and a carbon atom in the unit structure (B). A first composite unit structure includes, as the unit structure (B), a unit structure (B-I) having a naphthalene ring, and a second composite unit structure includes, as the unit structure (B), a unit structure (B-II) having an aliphatic hydrocarbon group.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08G 8/20 - Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
A method for manufacturing a machined semiconductor substrate (1) comprises: a step for preparing a laminate having a semiconductor substrate (1), a support substrate (4), an adhesive agent layer (2) provided between the semiconductor substrate (1) and the support substrate (4), and a release agent layer (3) provided between the semiconductor substrate (1) and the support substrate (4); a machining step for machining the semiconductor substrate (1) in the laminate; an irradiation step for, after the machining step, irradiating the release agent layer (3) with an ultraviolet laser; and a separation step for, after the irradiation step, separating the machined semiconductor substrate (1) and the support substrate (4). The adhesive agent layer (2) is formed from an adhesive composition which contains an adhesive component, and the area of irradiation in the irradiation step is smaller than the area of the adhesive agent layer (2).
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/57 - Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
43.
ADHESIVE COMPOSITION, LAMINATE, METHOD FOR PRODUCING LAMINATE, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE OR ELECTRONIC DEVICE SUBSTRATE
The present invention provides, for example, a laminate which has a support substrate, a semiconductor substrate or an electronic device substrate, and an adhesive layer that is disposed between the semiconductor substrate or the electronic device substrate and the support substrate, wherein when a semiconductor wafer is separated from the support substrate, the interface between the semiconductor wafer and the adhesive layer serves as the separation interface, thereby enabling the achievement of device separation.
Provided is a nitrogen atom-containing substrate coating agent composition that contains: a resin (G) having a conjugated unit structure; and a solvent. The conjugated unit structure has a unit structure (A) having an aromatic ring and a unit structure (B) having one or more carbon atoms. The resin (G) is obtained through a reaction that generates a covalent bond between a carbon atom that constitutes the aromatic ring in the unit structure (A) and a carbon atom in the unit structure (B). The unit structure (A) includes at least a unit structure (A-I) that contains a nitrogen atom. The nitrogen atom-containing substrate is a substrate comprising a compound having a bond between a nitrogen atom and a metal atom or a metalloid atom or a substrate having a nitrogen atom-containing film comprising a compound having a bond between a nitrogen atom and a metal atom or a metalloid atom. The resin (G) is not a resin synthesized only from indole and 1-naphthoaldehyde.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This composition for forming a resist underlayer film contains a solvent and a resin (G) that has a plurality of composite unit structures. The composite unit structures each have a unit structure (A) that has a naphthalene ring having one or two phenolic hydroxyl groups, and a unit structure (B) that has one or more carbon atoms. The resin (G) is obtained by a reaction for forming a covalent bond between a carbon atom that constitutes the naphthalene ring of the unit structure (A) and a carbon atom in the unit structure (B). The first composite unit structure includes, as the unit structure (B), a unit structure (B-I) that has a naphthalene ring, and the second composite unit structure includes, as the unit structure (B), a unit structure (B-II) that has a benzene ring.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08G 8/20 - Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
This resist underlayer film-forming composition contains a solvent and a resin (G) having a plurality of composite unit structures. The composite unit structures each have a unit structure (A) having an aromatic ring and a unit structure (B) having one or more carbon atoms. The resin (G) is obtained through a reaction for generating a covalent bond between a carbon atom constituting the aromatic ring in the unit structure (A) and a carbon atom in the unit structure (B). A first composite unit structure includes a unit structure (A-I) including a naphthol as the unit structure (A), and a second composite unit structure includes a unit structure (A-II) including a nitrogen atom as the unit structure (A).
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08G 14/00 - Condensation polymers of aldehydes or ketones with two or more other monomers covered by at least two of the groups
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a composition for forming a resist underlayer film, which contains a solvent and a resin (G) that has a plurality of composite unit structures, wherein: the composite unit structures each have a unit structure (A) that has an aromatic ring and a unit structure (B) that has one or more carbon atoms; the resin (G) is obtained by a reaction for forming a covalent bond between a carbon atom that constitutes the aromatic ring of the unit structure (A) and a carbon atom in the unit structure (B); a first composite unit structure includes, as the unit structure (B), a unit structure (B-I) that has an aromatic ring; and a second composite unit structure includes, as the unit structure (B), a unit structure (B-II) that has an aliphatic hydrocarbon group.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08G 8/00 - Condensation polymers of aldehydes or ketones with phenols only
C08G 12/00 - Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
A composition for forming a coating film for foreign substance removal, said composition containing a water-soluble compound and a solvent, and being capable of forming a coating film that can be removed by water.
A composition for forming a resist underlayer film, the composition containing: a resin (A) having a polymerizable multiple bond and a carboxy group; and a solvent (B).
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08F 20/32 - Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
The present invention comprises a composition for forming a resist underlayer film containing a resin (G) having a composite unit structure and a solvent, wherein: the composite unit structure has a unit structure (A) having an aromatic ring and a unit structure (B) having at least one carbon atom; the resin (G) is obtained via a reaction for generating a covalent bond between a carbon atom constituting the aromatic ring of the unit structure (A) and a carbon atom in the unit structure (B); and the unit structure (B) includes a unit structure (B-I) having at least a dioxin skeleton.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08G 8/04 - Condensation polymers of aldehydes or ketones with phenols only of aldehydes
C08G 10/02 - Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
Provided are a semiconductor substrate cleaning method and the like that make it possible to use a cleaning composition to remove (clean) an adhesive residue from the surface of a semiconductor substrate that includes an electrode without damaging the electrode. A semiconductor substrate cleaning method according to the present invention includes a step for using a cleaning composition to clean a semiconductor substrate that includes an electrode. The value of the polarity parameter (δp) of the Hansen solubility parameters (HSP) of the cleaning composition is less than 9.9 MPa0.5.
This composition for forming a resist underlayer film comprises a resin (A) and a solvent (B). The resin (A) is a polymer containing a structural unit represented by formula (1) or a structural unit represented by formula (2). In formula (1), R1represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 represents a hydrogen atom, a methyl group or an ethyl group, and p is an average addition mole number and is 2 to 20. In formula (2), Q represents a divalent group having no sulfur atom, and q represents an average addition mole number and is 1-20.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08F 20/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
A laminate comprising a compound-semiconductor substrate, a support substrate, and an adhesive layer provided between the compound-semiconductor substrate and the support substrate.
Provided is a composition for forming a glass surface protective film that contains a coloring agent having a maximum absorption wavelength in a range of 600-800 nm, and a solvent, and that is used for protecting a glass substrate.
C03C 17/32 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
55.
METAL ELEMENT-DOPED METAL OXIDE DISPERSION LIQUID, METHOD FOR PRODUCING SAME, CHARGE-TRANSPORTING INK COMPOSITION, CHARGE-TRANSPORTING THIN FILM, AND ELECTRONIC ELEMENT
Provided are a metal element-doped metal oxide dispersion liquid and a method for producing the same, the metal element-doped metal oxide dispersion liquid being excellent in dispersibility of the metal element-doped metal oxide particles, and it being possible to satisfy characteristics (flatness, defect amount, PL intensity of quantum dots when laminated as an ETL on a quantum dot layer, charge transport properties, etc.) The metal element-doped metal oxide dispersion liquid includes metal element-doped metal oxide particles and a solvent as a dispersion medium, and has a metal cation content calculated from Li, Na, K, and Ca included in the solvent of 1 to 2700 ppm, the metal oxide particles being particles having zinc oxide as a main component, the metal element doped into the particles having zinc oxide as a main component including one or more elements selected from Al, Mg, Li, Ca, Ga, and In, and the doped metal element being included in a ratio of 2-20 mol% with respect to elemental zinc.
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 71/13 - Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
H10K 71/15 - Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
56.
METHOD FOR MANUFACTURING LIGHT-EMITTING DISPLAY DEVICE
Provided is a method for manufacturing a light-emitting display device that is an electroluminescence (EL) device using quantum dot light-emitting diode technology or organic light-emitting diode technology, and with which it is possible to manufacture the light-emitting display device by a simple and more practical method. This is a method for manufacturing a light-emitting display device using photolithography patterning, wherein a resist layer used for forming a resist pattern is formed using a positive photosensitive resin composition containing a positive photosensitive component and a solvent. The method for manufacturing the light-emitting display device includes: (i) depositing a light-emitting-layer-forming material layer, and then laminating a resist layer on the light-emitting-layer-forming material layer; (ii) patterning the resist layer to form a resist pattern; (iii) etching the light-emitting-layer-forming material layer using the resist pattern as a mask to form a pattern of a light-emitting layer; and (iv) peeling the resist pattern from the light-emitting layer after exposing the resist pattern laminated on the upper side of the light-emitting layer.
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 59/122 - Pixel-defining structures or layers, e.g. banks
H10K 71/20 - Changing the shape of the active layer in the devices, e.g. patterning
H10K 71/40 - Thermal treatment, e.g. annealing in the presence of a solvent vapour
57.
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
This composition for forming a resist underlayer film comprises a resin (G) having a composite unit structure and a solvent, wherein: the composite unit structure has a unit structure (A) having an aromatic ring and a unit structure (B) having at least one carbon atom; the resin (G) is a resin obtained by a reaction for generating a covalent bond between a carbon atom constituting the aromatic ring of the unit structure (A) and a carbon atom in the unit structure (B); and the unit structure (A) includes a unit structure (A-I) including at least a nitrogen atom and an aliphatic hydrocarbon ring.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Provided is a semiconductor element-forming composition that is for use in forming circuits or the like for a semiconductor device and that satisfactorily has all of good applicability, curability of film in a short period of time, and good storage stability. This semiconductor element-forming composition comprises: (A) a compound or a polymer having a reactive group indicated by a cyclic ether structure represented by formula (I); (B) a compound or a polymer having a reactive group that has reactivity to the reactive group in (A); (C) a basic curing agent; (D) an acidic additive; and (E) a solvent. (In formula (I), * represents a binding site. n represents 1 or 2. When n equals 1, X represents an ether bond, an ester bond, or an amide bond, and, when n equals 2, X represents a nitrogen atom or an amide bond.)
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
A composition for forming a resist underlayer film containing a polymer having a first repeating unit represented by Formula (1) and a second repeating unit other than the first repeating unit, and a solvent, in which an average particle size of the polymer in a polymer solution containing the polymer is 50 nm or less. In Formula (1), R1 represents a hydrogen atom, a methyl group, or a halogen atom, and R2 represents a trivalent hydrocarbon group having 3 to 6 carbon atoms. Here, the lactone structure containing R2 is a 5-membered ring or a 6-membered ring.
A composition for forming a resist underlayer film containing a polymer having a first repeating unit represented by Formula (1) and a second repeating unit other than the first repeating unit, and a solvent, in which an average particle size of the polymer in a polymer solution containing the polymer is 50 nm or less. In Formula (1), R1 represents a hydrogen atom, a methyl group, or a halogen atom, and R2 represents a trivalent hydrocarbon group having 3 to 6 carbon atoms. Here, the lactone structure containing R2 is a 5-membered ring or a 6-membered ring.
Provided is a liquid crystal alignment film which is applied to a low-temperature baking step and maintains a high voltage retention rate in a severe environment even when the amount of irradiated light in an alignment process performed by an optical alignment method is small. In addition, provided is a liquid crystal alignment film that exhibits good in-plane contrast uniformity. This liquid crystal aligning agent contains at least one polymer (P) selected from the group consisting of: polyimide precursors each obtained by using a tetracarboxylic acid component including at least one selected from the group consisting of tetracarboxylic dianhydrides represented by formula (1) and derivatives thereof, and a diamine component including a diamine represented by formula (2-1) and a diamine represented by formula (2-2); and polyimides that are imides of the polyimide precursors. (In the formulae, the meaning of each symbol is as defined in the description.)
aabbb), with at least some of the terminals including a non-amino group, and the non-amino group being a functional group represented by formula (E). [Formula 1] (The definitions of the symbols are as described in the specification.) [Formula 2] (The definitions of the symbols are as described in the specification.) [Formula 3] (The definitions of the symbols are as described in the specification.) [Formula 4] [Formula 5] (The definitions of the symbols are as described in the specification.)
The present invention relates to an aryltetrahydropyridine compound or a salt thereof, the aryltetrahydropyridine compound being represented by formula (1). In formula (1), Q is Q-3 or the like, J is J-1 or the like, G is G-3 or the like, R2is a hydrogen atom or the like, R3 is a hydrogen atom or the like, X is an oxygen atom or the like, and Y is an oxygen atom or the like.
C07D 413/14 - Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms containing three or more hetero rings
A01N 43/40 - Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having rings with one nitrogen atom as the only ring hetero atom six-membered rings
A01N 43/72 - Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having rings with nitrogen atoms and oxygen or sulfur atoms, as ring hetero atoms
A01N 43/80 - Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having rings with nitrogen atoms and oxygen or sulfur atoms, as ring hetero atoms five-membered rings with one nitrogen atom and either one oxygen atom or one sulfur atom in positions 1,2
A01N 43/82 - Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having rings with nitrogen atoms and oxygen or sulfur atoms, as ring hetero atoms five-membered rings with three hetero atoms
A01N 43/84 - Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having rings with nitrogen atoms and oxygen or sulfur atoms, as ring hetero atoms six-membered rings with one nitrogen atom and either one oxygen atom or one sulfur atom in positions 1,4
A01N 43/90 - Biocides, pest repellants or attractants, or plant growth regulators containing heterocyclic compounds having two or more relevant hetero rings, condensed among themselves or with a common carbocyclic ring system
A61K 31/55 - Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having seven-membered rings, e.g. azelastine, pentylenetetrazole
A61K 31/439 - Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having six-membered rings with one nitrogen as the only ring hetero atom the ring forming part of a bridged ring system, e.g. quinuclidine
A61K 31/444 - Non-condensed pyridinesHydrogenated derivatives thereof containing further heterocyclic ring systems containing a six-membered ring with nitrogen as a ring hetero atom, e.g. amrinone
A61K 31/454 - Non-condensed piperidines, e.g. piperocaine containing further heterocyclic ring systems containing a five-membered ring with nitrogen as a ring hetero atom, e.g. pimozide, domperidone
A61K 31/497 - Non-condensed pyrazines containing further heterocyclic rings
A61K 31/501 - PyridazinesHydrogenated pyridazines not condensed and containing further heterocyclic rings
A61K 31/506 - PyrimidinesHydrogenated pyrimidines, e.g. trimethoprim not condensed and containing further heterocyclic rings
A61K 31/541 - Non-condensed thiazines containing further heterocyclic rings
A61K 31/553 - Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having seven-membered rings, e.g. azelastine, pentylenetetrazole having at least one nitrogen and at least one oxygen as ring hetero atoms, e.g. loxapine, staurosporine
A61K 31/4439 - Non-condensed pyridinesHydrogenated derivatives thereof containing further heterocyclic ring systems containing a five-membered ring with nitrogen as a ring hetero atom, e.g. omeprazole
A61K 31/4525 - Non-condensed piperidines, e.g. piperocaine containing further heterocyclic ring systems containing a five-membered ring with oxygen as a ring hetero atom
A61K 31/4535 - Non-condensed piperidines, e.g. piperocaine containing further heterocyclic ring systems containing a heterocyclic ring having sulfur as a ring hetero atom, e.g. pizotifen
A61K 31/4545 - Non-condensed piperidines, e.g. piperocaine containing further heterocyclic ring systems containing a six-membered ring with nitrogen as a ring hetero atom, e.g. pipamperone, anabasine
A61K 31/5377 - 1,4-Oxazines, e.g. morpholine not condensed and containing further heterocyclic rings, e.g. timolol
A61K 31/5386 - 1,4-Oxazines, e.g. morpholine spiro-condensed or forming part of bridged ring systems
C07D 401/04 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings directly linked by a ring-member-to-ring- member bond
C07D 401/14 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing three or more hetero rings
C07D 405/04 - Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings directly linked by a ring-member-to-ring- member bond
C07D 405/14 - Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing three or more hetero rings
C07D 409/04 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings directly linked by a ring-member-to-ring- member bond
C07D 409/14 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
C07D 413/04 - Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms containing two hetero rings directly linked by a ring-member-to-ring- member bond
C07D 417/14 - Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group containing three or more hetero rings
C07D 453/02 - Heterocyclic compounds containing quinuclidine or iso-quinuclidine ring systems, e.g. quinine alkaloids containing not further condensed quinuclidine ring systems
Provided are: a resist underlayer film-forming composition capable of improving sensitivity further than before, in an EB exposure method or an EUV exposure method; and a resist underlayer film. The present invention pertains to a resist underlayer film-forming composition for forming a resist underlayer film, the composition comprising a polysaccharide (A) having a hydroxy group and a solvent (B). Moreover, the present invention pertains to a resist underlayer film-forming composition, wherein the polysaccharide (A) is cyclodextrin.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08F 220/26 - Esters containing oxygen in addition to the carboxy oxygen
This resist underlayer film-forming composition is for use in electron beam lithography or EUV lithography, and contains a solvent and a polymer having a structural unit represented by formula (1). (In formula (1), each A independently represents a hydrogen atom, a methyl group, or an ethyl group. Q represents a divalent group. X represents a hydrogen atom or a nitro group.)
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
[Problem] To provide a composition capable of obtaining an alignment material having excellent alignment properties and heat resistance through firing at a low temperature in a short time without using a crosslinking agent containing an N-methylol group, an N-alkoxymethyl group, or the like. [Solution] This cured film-forming composition comprises (A) a compound represented by formula (a), (B) a polymer having an epoxy group, and (C) a thermal acid generator.
[Problem] To provide a composition capable of obtaining, through a brief low-temperature firing, an alignment material having excellent alignment properties and adhesiveness without using a crosslinking agent including an N-methylol group, an N-alkoxymethyl group, or the like. [Solution] A cured film-forming composition of the present invention contains (A) a compound represented by formula (a), (B) a polymer having an epoxy group, (C) a thermal acid generator, and (D) a compound having a nucleophilic group and a radically polymerizable group including a C=C double bond.
A method for producing a cleaning agent composition for use in removal of, for example, a polysiloxane adhesive. The composition contains a quaternary ammonium salt, an etching rate enhancer formed of an amphoteric surfactant, and an organic solvent.
Provided is, inter alia, a composition for forming a resist underlayer film, which is resistant to solvents and has excellent sensitivity in resist patterning. This composition for forming a resist underlayer film contains a polymer (A) and a solvent (B), the polymer (A) having a sulfonic acid group.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08G 59/02 - Polycondensates containing more than one epoxy group per molecule
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
69.
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This composition for forming a resist underlayer film contains: a resin (G) having a composite unit structure; and a solvent. The composite unit structure has a unit structure (A) having an aromatic ring and a unit structure (B) having one or more carbon atoms. The resin (G) is a resin obtained by a reaction for generating a covalent bond between a carbon atom constituting the aromatic ring of the unit structure (A) and a carbon atom in the unit structure (B). The unit structure (A) includes a unit structure (A-I) containing at least a nitrogen atom and a carbon-carbon triple bond. The unit structure (B) includes a unit structure (B-I) having a non-aromatic hydrocarbon ring. The number of carbon atoms constituting the non-aromatic hydrocarbon ring of the unit structure (B-I) is 5-30.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
70.
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A composition for forming a resist underlayer film, the composition comprising a solvent and a resin (G) having a complex unit structure, wherein: the complex unit structure includes a unit structure (A) having an aromatic ring and a unit structure (B) having one or more carbon atoms; the resin (G) is obtained by means of a reaction that generates a covalent bond between a carbon atom constituting the aromatic ring of the unit structure (A) and a carbon atom in the unit structure (B); the unit structure (A) includes a unit structure (A-I) comprising at least a nitrogen atom; the unit structure (B) includes a unit structure (B-I) having a non-aromatic hydrocarbon ring; the number of carbon atoms constituting the non-aromatic hydrocarbon ring of the unit structure (B-I) is 5 to 30; and the resin (G) is not a resin that is synthesized from only carbazole and dicyclopentadiene.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
A resist underlayer film-forming composition comprising a solvent and a resin (G) having a complex unit structure, wherein the complex unit structure has a unit structure (A) having an aromatic ring and a unit structure (B) having at least one carbon atom, the resin (G) is obtained through a reaction for generating a covalent bond between a carbon atom forming the aromatic ring of the unit structure (A) and a carbon atom in the unit structure (B), the unit structure (A) includes a unit structure (A-I) including a carbon-carbon triple bond and an oxygen atom directly bound to the aromatic ring, the unit structure (B) includes a unit structure (B-I) having a nonaromatic hydrocarbon ring, and the number of carbon atoms forming the nonaromatic hydrocarbon ring of the unit structure (B-I) is 5-30.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
[Problem] To provide a cured film-forming composition that uses a film such as an acrylic film as the base material, has excellent solvent resistance, is capable of aligning a polymerizable liquid crystal with high sensitivity, and forms a cured film used for forming an alignment material with little cissing by low-temperature firing at less than 100° C. [Solution] A cured film-forming composition containing (A) a low-molecular compound having a photo-aligning group and a thermally crosslinkable group, (B) a polymer containing a monomer selected from N-hydroxymethyl(meth)acrylamide and N-alkoxymethyl(meth)acrylamide compounds as a monomer component, (C) a polymer having a hydroxy group (excluding those included in the definition of component (B)), (D) inorganic fine particles, and (E) a crosslinking catalyst.
The present invention provides: a liquid crystal alignment film which has good liquid crystal alignment properties, while having excellent pretilt angle developability; a liquid crystal display element which is provided with this liquid crystal alignment film; and a liquid crystal aligning agent which enables the achievement of this liquid crystal alignment film. The present invention provides a liquid crystal aligning agent which contains: as a component (A), a compound that has a thermally crosslinkable group and a photo-alignment group represented by formula (pa-1), wherein the thermally crosslinkable group is capable of forming a covalent bond by being reacted with a carboxy group; and as a component (B), a polyamic acid and a solvent. (In formula (pa-1), A represents a phenylene group or the like; R1 represents —COO— or —OCO—; R2 represents a cyclohexane-1,4-diyl group; R3 represents a cyclohexane-1,4-diyl group; R4 represents a linear or branched alkyl group having 1 to 40 carbon atoms, and some or all of the hydrogen atoms in this alkyl group may be substituted by fluorine atoms; D represents an oxygen atom, a sulfur atom or —NRd-; a represents an integer of 0 to 3; and * denotes a bonding position.)
C09K 19/30 - Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing saturated or unsaturated non-aromatic rings, e.g. cyclohexane rings
Core-shell type metal oxide particles each include: a core containing metal oxide particles that have an average primary particle diameter of 3-100 nm; and a shell containing metal oxide particles that have an average primary particle diameter of 1-7 nm and that cover the core surfaces. The average primary particle diameters have a relationship of (metal oxide particles of the cores)>(metal oxide particles of the shells). When component (a) is titanium oxide and component (b) is a metal oxide other than titanium oxide, the cores are formed of particles including component (a) or a combination of component (a) and component (b), and the shells are formed of particles including component (b). The mass ratio of (metal oxide other than titanium oxide)/(titanium oxide) is in the range of 0.05-1.0.
B01J 13/00 - Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided forMaking microcapsules or microballoons
C09D 7/62 - Additives non-macromolecular inorganic modified by treatment with other compounds
76.
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
A composition for a forming resist underlayer film, said composition comprising a resin (G) that has a complex unit structure and a solvent, wherein: the complex unit structure has a unit structure (A) that has an aromatic ring and a unit structure (B) that has one or more carbon atoms; the resin (G) is obtained by a reaction that produces a covalent bond between a carbon atom of the aromatic ring of the unit structure (A) and a carbon atom of the unit structure (B); the unit structure (A) includes a unit structure (A-I) that includes a phenolic hydroxy group; the unit structure (B) includes a unit structure (B-I) that has a non-aromatic hydrocarbon ring; the number of carbon atoms constituting the non-aromatic hydrocarbon ring of the unit structure (B-I) is 5-30; and the resin (G) is not a resin that is synthesized from only 1-naphthol and dicyclopentadiene, a resin that is synthesized from only 1,5-naphthalenediol and dicyclopentadiene, or a resin that is synthesized from only phenol and dicyclopentadiene.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
The purpose of the present invention is to provide a liquid crystal display element in which AC image retention is not likely to occur even if firing is carried out at a low temperature when the liquid crystal alignment film is manufactured. The purpose of the present invention is further to provide: a liquid crystal alignment film used in the liquid crystal display element; and a liquid crystal aligning agent for manufacturing the liquid crystal alignment film. The liquid crystal aligning agent contains at least one polymer (P) selected from among polyimide precursors and polyimides obtained using a tetracarboxylic acid component that contains at least one selected from among tetracarboxylic acid dianhydrides represented by formula (1) and derivatives thereof, and a diamine component that contains a diamine represented by formula (2). (In the formula, the meaning of each symbol is as defined in the description.) (In the formula, the meaning of each symbol is as defined in the description.)
[Problem] The present invention is to provide a photosensitive resin composition that makes it possible to form a cured film that can be used in a liquid crystal display element, an organic EL display element, an inorganic EL display element, or the like. The water and oil repellency of the surface of the cured film are to be maintained without loss through a development step, and a substrate is to be given high water and oil repellency such that an EL element formation ink achieves favorable spread without overflowing a bank to an adjacent pixel or causing cissing or unevenness. In other words, the present invention is to provide a photosensitive resin composition that makes it possible to form a cured film that has developer resistance, liquid repellency, and ink wettability. [Solution] A photosensitive resin composition according to the present invention contains components (A)–(D). (A) An alkali-soluble polymer. (B) A liquid-repellent polymer that includes a copolymer that comprises at least (B1) a monomer that includes a liquid-repellent group, (B2) a monomer that includes a trialkoxysilyl group, and (B3) a monomer of a cyclic compound. (C) A photosensitizer. (D) A solvent.
G03F 7/023 - Macromolecular quinonediazidesMacromolecular additives, e.g. binders
G03F 7/033 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
G09F 9/30 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
H10K 59/122 - Pixel-defining structures or layers, e.g. banks
[Problem] To provide a cured film-forming composition that involves the use of a film such as an acrylic film as a base material, has excellent solvent resistance, is capable of aligning a polymerizable liquid crystal with high sensitivity, and is for forming a cured film used to form an alignment material with little cissing by low-temperature firing at less than 100°C. [Solution] A cured film-forming composition containing (A) a low molecular compound having a photo-alignable group and a thermally crosslinkable group, (B) a crosslinking agent having an N-hydroxymethyl group or an N-alkoxymethyl group, (C) a polymer in which 60 mol% or more of the total repeating units include a hydroxyl group, (D) a polymer that has a repeating unit having a hydroxyl group and in which a repeating unit represented by formula (X) accounts for 45 mol% or more of the total repeating units, (E) inorganic fine particles surface-modified with a group having no (meth)acrylic groups, (F) a low molecular compound having both a (meth)acrylic group and a hydroxy group, and (G) a crosslinking catalyst. (In the formula, R1represents a hydrogen atom or a methyl group, and R2 represents a linear or branched alkyl group having 1-5 carbon atoms.)
The present invention relates to an organic film forming composition for use in forming an organic film which is to be formed between resist patterns formed from a metal-containing resist film and is to be removed subsequently. The organic film forming composition contains: an organic polymer having a glass transition temperature of 150°C or higher; and a solvent.
Provided are: a resist underlayer film-forming composition that can form a resist underlayer film capable of forming, with high sensitivity, a fine resist pattern; and a resist underlayer film, a laminate, a method for producing a semiconductor element, and a pattern formation method, in all of which the resist underlayer film-forming composition is used. This resist underlayer film-forming composition contains a solvent and a polymer (A) having, in a sidechain, an aromatic hydrocarbon ring and one or more polymerizable multiple bonds selected from the group consisting of a carbon-carbon double bond, a carbon-carbon triple bond, a carbon-nitrogen double bond, and a carbon-nitrogen triple bond.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C08F 8/00 - Chemical modification by after-treatment
C08G 59/16 - Polycondensates modified by chemical after-treatment by monocarboxylic acids or by anhydrides, halides or low-molecular-weight esters thereof
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a composition for forming a resist underlayer film, the composition containing a solvent and a resin (G) having a composite unit structure, the composite unit structure having a unit structure (A) that has an aromatic ring and a unit structure (B) that has one or more carbon atoms, the resin (G) being obtained through a reaction for generating a covalent bond between a carbon atom constituting the aromatic ring of the unit structure (A) and a carbon atom in the unit structure (B), the unit structure (A) including a unit structure (A-I) that includes at least a biphenyl skeleton, and the unit structure (B) including a unit structure (B-I) that has a quaternary carbon atom bonded to a carbon atom constituting the aromatic ring of the unit structure (A).
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
The purpose of the present invention is to provide a liquid crystal display element in which an AC afterimage does not readily occur. A further purpose of the present invention is to provide a liquid crystal alignment film used in the liquid crystal display element, and a liquid crystal alignment agent for manufacturing the liquid crystal alignment film. Provided is a liquid crystal alignment agent containing at least one type of polymer selected from a polyimide and a polyimide precursor having a structure represented by formula (1). (In the formula, Xaand Xceach independently represent a divalent organic group, Xbrepresents an organic group having 4-30 carbon atoms, Xd represents a monovalent organic group, and aX represents an integer of 2.)
Provided are: oxide colloidal particles which contain rutile-type titanium oxide as a main component and in which the formation of anatase-type titanium oxide is effectively suppressed; a sol containing the oxide colloidal particles; and a method for producing the oxide colloidal particles. The problem is solved by oxide colloid particles (A) comprising Ti and Sn and having an average primary particle diameter of 5-300 nm and/or a primary particle diameter of 5-300 nm in terms of both D10 and D90 in the number-based cumulative particle size distribution, wherein the numerical value of (rutile-type tin dioxide content)/(rutile-type titanium oxide content) (mass ratio) calculated by the method below is 0.3-3.5% when expressed as a percentage: (rutile-type tin dioxide content)/(rutile-type titanium oxide content) (mass ratio) = ((intensity of rutile-type tin dioxide diffraction lines in a diffraction pattern obtained by powder X-ray diffraction in a 2θ range of 20.0°-80.0°)/9.63)/((intensity of rutile-type titanium oxide diffraction lines in the diffraction pattern obtained by powder X-ray diffraction in the 2θ range of 20.0°-80.0°)/ 3.27).
01 - Chemical and biological materials for industrial, scientific and agricultural use
Goods & Services
Chemicals; chemicals used in the manufacture of display
screens and display monitors; chemicals for use in the
manufacture of semi-conductors; plastics, unprocessed;
unprocessed plastic materials in the form of powder, liquid,
or paste; acrylic resins for electronic components; acrylic
resin solutions for electronic components; acrylic resins
for components of display screens and display monitors;
acrylic resin solutions components of display screens and
display monitors; acrylic resins for semi-conductor
components; acrylic resin solutions for semi-conductor
components; photosensitive resins; filtering materials of
unprocessed plastics; unprocessed organic silicone resin;
silicon; silicon for industrial use; silicon being a metal
element; silicates; silica gel; water glass [soluble glass];
silicones; glue and adhesives for industrial purposes;
adhesives for electronic components; chemical preparations
for sealing semi-conductors; chemical preparations for
sealing semi-conductors in liquid form; chemical coatings
for ophthalmic lenses; scratch-resistant chemical coatings;
chemical coatings for optical lenses; silicone resin coating
agent; chemicals for the manufacture of paints; chemical
preparations for scientific purposes, other than for medical
or veterinary use; chemical reagents, other than for medical
or veterinary purposes; solvents for varnishes; chemical
preparations for use in photography.
88.
COMPOSITION FOR FORMING COATING FILM FOR FOREIGN SUBSTANCE REMOVAL, AND SEMICONDUCTOR SUBSTRATE
Provided is a composition for forming a coating film for foreign substance removal, the composition containing a polymer and a solvent, and making it possible to form a coating film that can be removed by a remover liquid, wherein the polymer contains a structural unit expressed by formula (1). [In formula (1), R1represents a hydrogen atom or a C1-3 alkyl group, R2represents a hydrogen atom or a C1-4 alkyl group, and R3represents an optionally substituted C1-10 alkyl group or an optionally substituted aromatic hydrocarbon group. R2and R3may form a ring together with a carbon atom and an oxygen atom between R2and R3, and the ring may contain a heteroatom other than the oxygen atom.]
Provided is a coating film formation composition for foreign substance removal, said composition being able to form a coating film which contains a polymer and a solvent and can be removed by a removal liquid. [In formula (A), R11represents a single bond or a divalent group having 1 to 4 carbon atoms, R12 represents a hydrogen atom, a hydroxy group or a methyl group, and * represents a bonding site.]
The purpose of the present invention is to provide a liquid crystal light control element which has good liquid crystal alignment properties, specifically exhibits a pretilt angle of 2 to 20°, and is excellent in electrical characteristics (high voltage holding ratio). Provided is a liquid crystal light control element in which liquid crystal alignment properties or electrical characteristics do not deteriorate even in a harsh environment. Further provided are a liquid crystal alignment film used for the liquid crystal light control element and a liquid crystal alignment agent for manufacturing the liquid crystal alignment film. The liquid crystal alignment agent contains at least one polymer selected from a polyimide and a polyamide precursor obtained by reacting a diamine component including a diamine of formula [1a], a diamine of formula [2a] and a diamine of formula [3a] with a tetracarboxylic acid component.
The present invention provides a method for uniformly seeding cells or tissue onto a cell attachment surface on the inner side of a container. The method comprises: (step 1) a step for uniformly dispersing cells or tissue in a plastic fluid; and (step 2) a step for causing cells or tissue to attach to the cell attachment surface on the inner side of the container.
This composition for forming a silicon-containing underlayer film is used for forming a silicon-containing underlayer film on which a surface-modified layer having a film thickness of 5 nm or less is formed. Said composition contains an [A] component that is a polysiloxane including a Q unit in the amount of 30 mol% or more relative to all units, and a [B] component that is water, but said composition does not contain a [C] component that is a curing catalyst.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
[Problem] The purpose of the present invention is to provide a resist underlayer film-forming composition that can further improve properties of a resist underlayer film, such as curing properties, heat resistance, etching resistance, planarization properties and embedding properties. [Solution] Provided is a resist underlayer film-forming composition characterized by containing a solvent and a novolac resin containing a side chain having a structure represented by formula (D). In formula (D), Ar2 is an aromatic ring. Formula (D): —O—Ar2. The novolac resin contains a conjugated unit structure A-B represented by formula (AB). A unit structure A contains a phenol unit structure and/or an amine unit structure.
[Problem] The purpose of the present invention is to provide a resist underlayer film-forming composition that can further improve properties of a resist underlayer film, such as curing properties, heat resistance, etching resistance, planarization properties and embedding properties. [Solution] Provided is a resist underlayer film-forming composition characterized by containing a solvent and a novolac resin containing a side chain having a structure represented by formula (D). In formula (D), Ar2 is an aromatic ring. Formula (D): —O—Ar2. The novolac resin contains a conjugated unit structure A-B represented by formula (AB). A unit structure A contains a phenol unit structure and/or an amine unit structure.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
The present invention provides: a protective film-forming composition capable of forming, using a simple coating method during the manufacture of a semiconductor device, a protective film having a satisfactory film state, good film curability, and high dry etching resistance on the edge of a substrate (wafer) for semiconductor manufacturing; a protective film formed from the protective film-forming composition; a wafer for semiconductor manufacturing, said wafer manufactured using the protective film; and methods for manufacturing the wafer for semiconductor manufacturing and a semiconductor device. This composition for forming a protective film on the edge of a wafer for semiconductor manufacturing contains: a polymer or a compound containing a polymerizable group and having a carbon content of 70% or more; and a solvent.
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
C08G 59/08 - Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof of polyhydric phenols from phenol-aldehyde condensates
C08G 59/17 - Polycondensates modified by chemical after-treatment by monocarboxylic acids or by anhydrides, halides or low-molecular-weight esters thereof by acrylic or methacrylic acid
G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
The present invention provides: a protective film-forming composition capable of forming, using a simple coating method during the manufacture of a semiconductor device, an alkali-developable protective film having a satisfactory film state and good film curability on the edge of a substrate (wafer) for semiconductor manufacturing; a protective film formed from the protective film-forming composition; a wafer for semiconductor manufacturing, said wafer manufactured using the protective film; and methods for manufacturing the wafer for semiconductor manufacturing and a semiconductor device. This composition for forming a protective film on the edge of a wafer for semiconductor manufacturing contains: a polymer or a compound having a polymerizable group and an alkali-soluble group; and a solvent.
G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
C08G 59/08 - Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof of polyhydric phenols from phenol-aldehyde condensates
C08G 59/17 - Polycondensates modified by chemical after-treatment by monocarboxylic acids or by anhydrides, halides or low-molecular-weight esters thereof by acrylic or methacrylic acid
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
The invention provides a method of inducing a DNA-encoded library (DEL) comprising cleavable site(s) in the DNA strand to a cross linker-modified double-stranded DEL and evaluating the DEL. Both the merits of the hairpin-stranded DEL and the double-stranded DEL are achieved in the invention by introducing the cleavable site(s) such as deoxyuridine into the DNA strand. The invention further provides a technique for screening a compound in which both “simple DEL synthesis method” and “expansion and improvement of the DEL evaluation method” are achieved by easily inducing the compound into a cross linker-modified DEL.
C40B 30/04 - Methods of screening libraries by measuring the ability to specifically bind a target molecule, e.g. antibody-antigen binding, receptor-ligand binding
C12Q 1/6876 - Nucleic acid products used in the analysis of nucleic acids, e.g. primers or probes
98.
POLYMER FILM-FORMING COMPOSITION AND SELECTIVE POLYMER FILM-FORMING METHOD
A substance which makes it possible to selectively mask according to the substrate surface material. A polymer film-forming composition for selectively forming a polymer film on a region (R-I) of a substrate which has the region (R-I), the surface of which includes a metal (I), and a region (R-II), the surface of which includes a material (II) which differs from the metal (I), the polymer film-forming composition including a radical generator (A) and a radical-equipped reactive compound (B); and a selective polymer film formation method for forming a film of the polymer film-forming composition on the surface of the substrate.
C09D 151/08 - Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
C08F 283/04 - Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass on to polycarbonamides, polyesteramides or polyimides
[Problem] To provide a cationically curable composition in which light-irradiation portions cure and even non-light-irradiation portions cure in molds of complicated shapes and which is usable in optical-member applications and adhesive applications. [Solution] Provided is a cationically curable composition which comprises an epoxy compound (A) including a fluorene skeleton containing an optionally substituted naphthalenediyl group, a mono- or higher-functional epoxy compound (B), a photoacid generator (C), a thermoacid generator (D), and an acid amplifier (E). Even non-light-irradiated portions of the cationically curable composition cure in molds of complicated shapes.
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
100.
METHOD FOR PRODUCING LAYERED BODY AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
Provided is a method for producing a layered body having a surface modification layer and a semiconductor substrate, the method comprising: a first step for obtaining a surface modification layer precursor by coating a semiconductor substrate with a surface modifier containing a polysiloxane (A) having organic groups having nitrogen atoms and a solvent (B), and then baking the semiconductor substrate with the surface modifier thereon; and a second step for obtaining a surface modification layer having a film thickness no greater than 5 nm by inducing contact between the surface modification layer precursor and a thinning solution (X) in order to thin the surface modification layer precursor.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
