A silica sol uses a carboxylic acid ester as a dispersion medium and a method for produces the same. The silica sol contains, as dispersoids, silica particles in which an alkoxy group represented by Si—OR1 is present on or near surfaces of silane-treated silica particles, a solvent containing a carboxylic acid ester having an R2—COO—R1 structure as a dispersion medium, and an amine. The dispersoids are silica particles in which at least two types of alkoxy groups represented by Si—OR0 and Si—OR1 are present and which have a molar ratio (Si—OR1)/(Si—OR0) of 0.002 to 50. Si—OR0 is Si—OCH3 or Si—OC2H5. The silica particles have an average particle diameter of 5 to 200 nm determined by a dynamic light scattering method.
B01J 13/00 - Chimie des colloïdes, p. ex. production de substances colloïdales ou de leurs solutions, non prévue ailleursFabrication de microcapsules ou de microbilles
A polymer having a partial structure represented by the following formula (1), a partial structure represented by the following formula (2), and a partial structure represented by the following formula (3):
A polymer having a partial structure represented by the following formula (1), a partial structure represented by the following formula (2), and a partial structure represented by the following formula (3):
A polymer having a partial structure represented by the following formula (1), a partial structure represented by the following formula (2), and a partial structure represented by the following formula (3):
wherein in the formula (2), Q1 represents a divalent organic group having an aromatic hydrocarbon ring or an aliphatic hydrocarbon ring, and in the formula (3), R11 represents an alkylene group having 1 to 10 carbon atoms.
This composition for forming a resist underlayer film contains a solvent and a resin (A) having a ring structure and a polymerizable multiple bond group. The ring structure is at least one selected from the group consisting of aromatic rings having 6-26 carbon atoms and non-aromatic rings having 6-10 carbon atoms. The polymerizable multiple bond group has at least one selected from the group consisting of a carbon-carbon double bond, a carbon-carbon triple bond, a carbon-nitrogen double bond, and a carbon-nitrogen triple bond.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 59/17 - Polycondensats modifiés par post-traitement chimique par des acides monocarboxyliques ou par leurs anhydrides, halogénures ou esters à bas poids moléculaire par l'acide acrylique ou méthacrylique
[Problem] To provide: metal oxide particles that can be highly concentrated in an organic solvent, which is a dispersion medium for a metal oxide sol, and can also be redispersed in the organic solvent; a metal oxide sol containing the metal oxide particles; and a method for producing same. [Solution] Metal oxide particles surface-coated with a hydrolysate of a silane compound (A) having two chemical groups (a1) and two hydrolyzable groups (a2), wherein the metal oxide particles contain a basic compound (I) (excluding ammonia), have a hydrophobicity of 30-80 vol% as measured by a methanol titration method, and can be dispersed at a particle refractive index of 1.4-3.0 and at a metal oxide concentration of at least 40 mass% in an organic solvent, or can be dispersed at a particle refractive index of at least 1.1 and less than 1.4 and at a metal oxide concentration of at least 25 mass% in an organic solvent.
Provided are: a composition for forming a resist underlayer film, the composition being capable of improving sensitivity in an EB exposure method or an EUV exposure method in comparison with the prior art; and a resist underlayer film. The composition for forming a resist underlayer film contains a polymer (A) and a solvent (B). The resist underlayer film forms a contact angle of 80° or greater with pure water. Additionally, in the composition for forming a resist underlayer film, the polymer (A) contains a fluorine atom.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 59/40 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les agents de durcissement utilisés
The present invention provides a liquid crystal alignment film and a liquid crystal alignment agent which are capable of stably generating a tilt angle from the vertical and obtaining high reliability. The present invention provides a liquid crystal alignment agent containing: a solvent; and a polymer obtained by using a monomer represented by formula (1) (in the formula, the definition of each substituent is as described in the description) as component (A).
Provided is a flexible device substrate-forming composition which is transparent even without containing fluorine atoms, has high heat resistance, and can form a resin thin film having good adhesion to an inorganic insulating film when forming an electrode on a polyimide. This flexible device substrate-forming composition contains component (A) and at least one of component (B) and component (C). Component (A): A polyimide precursor that does not include fluorine atoms, that has a structure derived from a diamine having a structure represented by formula (0-d) and from a tetracarboxylic dianhydride having a structure represented by formula (0-t) or (0-d) or a derivative thereof, and that also has one or both of a structure derived from a tetracarboxylic dianhydride satisfying condition (i) or a derivative thereof and a structure derived from a diamine satisfying condition (ii). Component (B): An imidization promoter. Component (C): A silane coupling agent. (Condition (i) and condition (ii) are as described in the description.)
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
B32B 17/10 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
B32B 27/34 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyamides
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
A resist underlayer film-forming composition including: a resin having a repeating structural unit including at least one —C(═O)—O— group in a main chain and a repeating structural unit including at least one hydroxy group in a side chain, or including at least one —C(═O)—O— group in a main chain and at least one hydroxy group in a side chain, wherein none of these units have an organic group containing an epoxy or oxetane ring; an acid catalyst or salt thereof in an amount of 0.1 to 10 parts by mass relative to 100 parts by mass of the resin, when the catalyst is a monovalent acid, an acid dissociation constant pKa is −0.5 or less in 25° C. water, or when a multivalent acid, an acid dissociation constant pKa1 is −0.5 or less in 25° C. water; and a solvent, wherein the composition does not include a monomer crosslinking agent.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 59/42 - Acides polycarboxyliquesLeurs anhydrides, halogénures ou esters à bas poids moléculaire
C08G 59/68 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les catalyseurs utilisés
C09D 163/00 - Compositions de revêtement à base de résines époxyCompositions de revêtement à base de dérivés des résines époxy
A resist underlayer film-forming composition for EB or EUV lithography, the resist underlayer film-forming composition including: a polymer containing a fluorene structure; and a solvent.
minmin) of the respective side chains being different from each other; and (B) a solvent. The phase difference film composition makes it possible to produce a single-layer phase difference material with little turbidity by a simpler process. (In the formulas, the definition of each substituent is as described in the description.)
Provided is a liquid crystal alignment agent from which it is possible to obtain a liquid crystal alignment film that exhibits excellent film strength, has few vibration-induced bright spots, and prevents AC afterimages at a high level. The liquid crystal alignment agent contains a polymer (P) and a polymer (B). Polymer (P): At least one polymer selected from the group consisting of polyimide precursors and polyimides obtained by using a diamine component and a tetracarboxylic acid component containing at least one substance selected from the group consisting of tetracarboxylic dianhydrides represented by formula (1) and derivatives thereof. Polymer (B): At least one polymer selected from the group consisting of polyimide precursors and polyimides obtained by using a diamine component and a tetracarboxylic acid component containing at least one substance selected from the group consisting of tetracarboxylic dianhydrides represented by formula (T2) and derivatives thereof. (In the formula, the meaning of each symbol is as defined in the description.)
Provided are a resin composition and a liquid crystal aligning agent having high rework characteristics of resin coating films and liquid crystal alignment films. Also provided are: a liquid crystal aligning agent that makes it possible to obtain a liquid crystal alignment film in which liquid crystal alignment is highly stable and uneven alignment of liquid crystals does not occur; the liquid crystal alignment film; and a liquid crystal display element using the liquid crystal alignment film. At least one polymer selected from polyimide precursors and polyimides having a structure represented by formula [1]. (R1represents a thermal leaving group. R2 represents a hydrogen atom or a monovalent organic group. * represents a bond.)
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C07C 275/40 - Dérivés d'urée, c.-à-d. composés contenant l'un des groupes les atomes d'azote ne faisant pas partie de groupes nitro ou nitroso ayant des atomes d'azote de groupes urée liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné étant substitué de plus par des atomes d'azote ne faisant pas partie de groupes nitro ou nitroso
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p. ex. par des couches d'alignement
13.
LIQUID CRYSTAL ALIGNING AGENT, LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY ELEMENT
Provided are: a novel liquid crystal aligning agent which can yield a liquid crystal alignment film having excellent film strength and few vibration spots; a liquid crystal alignment film obtained from said liquid crystal aligning agent; a liquid crystal display element obtained using said liquid crystal alignment film; and a novel compound and a novel polymer able to be used in these. This liquid crystal aligning agent contains at least one type of polymer (P) selected from the group consisting of: a polyimide precursor obtained using at least one type of tetracarboxylic acid component selected from the group consisting of tetracarboxylic acid dianhydrides and derivatives thereof and a diamine component including diamine represented by formula (2); and a polyimide that is an imidation product of said polyimide precursor. (In the formula, the meaning of each symbol is as defined in the description.)
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p. ex. par des couches d'alignement
C07C 233/62 - Amides d'acides carboxyliques ayant des atomes de carbone de groupes carboxamide liés à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons ayant l'atome d'azote d'au moins un des groupes carboxamide lié à un atome de carbone d'un radical hydrocarboné substitué par des groupes amino
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C08L 101/00 - Compositions contenant des composés macromoléculaires non spécifiés
14.
METHOD FOR MANUFACTURING LAMINATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
This method for manufacturing a laminate having a surface modified layer and a semiconductor substrate comprises: a first step for applying a surface modifier containing an organic compound (A) having a hydroxy group which may be protected by a deprotectable protecting group and a solvent (B) onto the semiconductor substrate, and thereafter firing the surface modifier to obtain a surface modified layer precursor; and a second step for bringing the surface modified layer precursor into contact with a thinning liquid (X) to thin the surface modified layer precursor to obtain the surface modified layer having a film thickness of 5 nm or less.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 8/00 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols
C08G 59/42 - Acides polycarboxyliquesLeurs anhydrides, halogénures ou esters à bas poids moléculaire
C08G 65/48 - Polymères modifiés par post-traitement chimique
The present invention provides a new germicide, particularly a new agricultural or horticultural germicide. The present invention provides: a pyrazole compound represented by formula (1) (the formula represents a structure in which G represents G-1 or the like, G1166 haloalkyl or the like, RX166 alkyl or the like, RYrepresents a hydrogen atom or the like, W represents -O- or -C(Ra)(R2)-, R1represents a hydrogen atom or the like, R2represents a hydrogen atom or the like, R3represents a hydrogen atom or the like, R4represents a hydrogen atom or the like, Rarepresents a hydrogen atom or the like, Z represents Z-1 or the like, Z1166 alkyl or the like, m5 and n5 each represent an integer of 0, 1, 2, 3, 4, or 5, and p represents an integer of 0 or 1); or a salt thereof.
C07D 231/14 - Composés hétérocycliques contenant des cycles diazole-1, 2 ou diazole-1, 2 hydrogéné non condensés avec d'autres cycles comportant deux ou trois liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques avec des hétéro-atomes ou avec des atomes de carbone comportant trois liaisons à des hétéro-atomes, avec au plus une liaison à un halogène, p. ex. radicaux ester ou nitrile, liés directement aux atomes de carbone du cycle
A01N 43/80 - Biocides, produits repoussant ou attirant les animaux nuisibles, ou régulateurs de croissance des végétaux, contenant des composés hétérocycliques comportant des cycles avec des atomes d'azote et des atomes d'oxygène ou de soufre, comme hétéro-atomes du cycle des cycles à cinq chaînons avec un atome d'azote et soit un atome d'oxygène, soit un atome de soufre, en positions 1,2
A01N 47/02 - Biocides, produits repoussant ou attirant les animaux nuisibles, ou régulateurs de croissance des végétaux, contenant des composés organiques comportant un atome de carbone ne faisant pas partie d'un cycle et ne comportant pas de liaison à un atome de carbone ou d'hydrogène, p. ex. dérivés de l'acide carbonique l'atome de carbone ne comportant pas de liaison à un atome d'azote
C07D 401/06 - Composés hétérocycliques contenant plusieurs hétérocycles comportant des atomes d'azote comme uniques hétéro-atomes du cycle, au moins un cycle étant un cycle à six chaînons avec un unique atome d'azote contenant deux hétérocycles liés par une chaîne carbonée contenant uniquement des atomes de carbone aliphatiques
C07D 401/12 - Composés hétérocycliques contenant plusieurs hétérocycles comportant des atomes d'azote comme uniques hétéro-atomes du cycle, au moins un cycle étant un cycle à six chaînons avec un unique atome d'azote contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07D 401/14 - Composés hétérocycliques contenant plusieurs hétérocycles comportant des atomes d'azote comme uniques hétéro-atomes du cycle, au moins un cycle étant un cycle à six chaînons avec un unique atome d'azote contenant au moins trois hétérocycles
C07D 403/06 - Composés hétérocycliques contenant plusieurs hétérocycles, comportant des atomes d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une chaîne carbonée ne contenant que des atomes de carbone aliphatiques
C07D 403/10 - Composés hétérocycliques contenant plusieurs hétérocycles, comportant des atomes d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une chaîne carbonée contenant des cycles aromatiques
C07D 403/12 - Composés hétérocycliques contenant plusieurs hétérocycles, comportant des atomes d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07D 403/14 - Composés hétérocycliques contenant plusieurs hétérocycles, comportant des atomes d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant au moins trois hétérocycles
C07D 405/12 - Composés hétérocycliques contenant à la fois un ou plusieurs hétérocycles comportant des atomes d'oxygène comme uniques hétéro-atomes du cycle et un ou plusieurs hétérocycles comportant des atomes d'azote comme uniques hétéro-atomes du cycle contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07D 409/06 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes de soufre comme uniques hétéro-atomes du cycle contenant deux hétérocycles liés par une chaîne carbonée contenant uniquement des atomes de carbone aliphatiques
C07D 409/12 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes de soufre comme uniques hétéro-atomes du cycle contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07D 409/14 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes de soufre comme uniques hétéro-atomes du cycle contenant au moins trois hétérocycles
C07D 413/12 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes d'azote et d'oxygène comme uniques hétéro-atomes du cycle contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07D 413/14 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes d'azote et d'oxygène comme uniques hétéro-atomes du cycle contenant au moins trois hétérocycles
C07D 417/06 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes de soufre et d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une chaîne carbonée contenant uniquement des atomes de carbone aliphatiques
C07D 417/12 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes de soufre et d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
A resist underlayer film-forming composition for use in a lithography process for producing a semiconductor device wherein the composition contains a polymer having a unit structure of the following Formula (I) or Formula (I′):
A resist underlayer film-forming composition for use in a lithography process for producing a semiconductor device wherein the composition contains a polymer having a unit structure of the following Formula (I) or Formula (I′):
A resist underlayer film-forming composition for use in a lithography process for producing a semiconductor device wherein the composition contains a polymer having a unit structure of the following Formula (I) or Formula (I′):
(each of n1, n2, and n3 is an integer of 0, rings A and are benzene or naphthalene rings, and D is a divalent organic group containing a structure of the following Formula (II) and/or (III):
A resist underlayer film-forming composition for use in a lithography process for producing a semiconductor device wherein the composition contains a polymer having a unit structure of the following Formula (I) or Formula (I′):
(each of n1, n2, and n3 is an integer of 0, rings A and are benzene or naphthalene rings, and D is a divalent organic group containing a structure of the following Formula (II) and/or (III):
A resist underlayer film-forming composition for use in a lithography process for producing a semiconductor device wherein the composition contains a polymer having a unit structure of the following Formula (I) or Formula (I′):
(each of n1, n2, and n3 is an integer of 0, rings A and are benzene or naphthalene rings, and D is a divalent organic group containing a structure of the following Formula (II) and/or (III):
The semiconductor device is produced by forming an underlayer film on a semiconductor substrate from the resist underlayer film-forming composition; forming a hard mask on the formed film; forming another resist film on the hard mask; forming a resist pattern; etching the hard mask with the formed resist pattern; etching the underlayer film with the patterned hard mask; and processing the semiconductor substrate with the patterned underlayer film.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/16 - Procédés de couchageAppareillages à cet effet
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
H01L 21/308 - Traitement chimique ou électrique, p. ex. gravure électrolytique en utilisant des masques
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08G 59/14 - Polycondensats modifiés par post-traitement chimique
A composition for pretreatment to be applied on a semiconductor substrate before a protective film is formed on the semiconductor substrate using a composition for forming a protective film, the composition for pretreatment including: at least one compound (A) selected from a compound having an aromatic ring and an aromatic hydroxy group, an organic reducing agent, and a chelating agent; and a solvent (B).
This composition for electrode formation contains a compound having a ring structure and an unsaturated bond, a positive electrode active material, a binder, and a solvent. The compound has dissociative protons in the molecules thereof. The proton dissociation energy of the compound is less than 1484.2 (kJ/mol). The highest occupied molecular orbital (HOMO) of the compound is greater than -0.27736 (a.u.).
H01M 4/13 - Électrodes pour accumulateurs à électrolyte non aqueux, p. ex. pour accumulateurs au lithiumLeurs procédés de fabrication
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
H01M 4/131 - Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p. ex. LiCoOx
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/1391 - Procédés de fabrication d'électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p. ex. LiCoOx
20.
COMPOSITION FOR FORMING ELECTRODE, ADDITIVE, AND GELATION INHIBITOR
Disclosed is a composition for forming an electrode, the composition containing: a compound that has a ring structure and an unsaturated bond; a positive electrode active material; a binder; and a solvent. The compound has dissociative protons in each molecule, the proton dissociation energy of the compound is less than 1504.7 (kJ/mol), and the bond dissociation energy of the compound is less than 452.61 (kJ/mol).
H01M 4/13 - Électrodes pour accumulateurs à électrolyte non aqueux, p. ex. pour accumulateurs au lithiumLeurs procédés de fabrication
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
H01M 4/131 - Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p. ex. LiCoOx
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/1391 - Procédés de fabrication d'électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p. ex. LiCoOx
Provided is a new method for producing an aromatic amino compound that is useful as a production intermediate for electronic materials and pharmaceutical and agricultural chemicals, and that has, at a moiety other than an aromatic ring, at least one multiple bond selected from carbon-carbon, carbon-nitrogen, and carbon-oxygen. This method for producing an aromatic amino compound is characterized by catalytically reducing an aromatic nitro compound having, at a moiety other than an aromatic ring, at least one multiple bond selected from carbon-carbon, carbon-nitrogen, and carbon-oxygen, by using a Pt/C catalyst in the presence of at least one phosphorus compound (A) selected from the group consisting of phosphorus compounds represented by formula (1), phosphorus compounds represented by formula (2), and phosphorus compounds represented by formula (3). (1): P(R133 (2): PO(R233 (3): (R322P-R4-P(R322 (The meaning of each symbol in formulae (1)-(3) is as defined in the description.)
C07C 227/04 - Formation de groupes amino dans des composés contenant des groupes carboxyle
B01J 31/28 - Catalyseurs contenant des hydrures, des complexes de coordination ou des composés organiques contenant en outre des composés métalliques inorganiques non prévus dans les groupes du groupe du platine, du cuivre ou du groupe du fer
B01J 31/36 - Catalyseurs contenant des hydrures, des complexes de coordination ou des composés organiques contenant en outre des composés métalliques inorganiques non prévus dans les groupes du vanadium, du niobium ou du tantale
C07C 209/36 - Préparation de composés contenant des groupes amino liés à un squelette carboné par réduction de liaisons azote-oxygène ou azote-azote par réduction de groupes nitro par réduction de groupes nitro liés à des atomes de carbone de cycles aromatiques à six chaînons
C07C 211/49 - Composés contenant des groupes amino liés à un squelette carboné ayant des groupes amino liés à des atomes de carbone de cycles aromatiques à six chaînons du squelette carboné ayant des groupes amino liés à un seul cycle aromatique à six chaînons ayant au moins deux groupes amino liés au squelette carboné
C07C 213/02 - Préparation de composés contenant des groupes amino et hydroxy, amino et hydroxy éthérifiés ou amino et hydroxy estérifiés liés au même squelette carboné par des réactions impliquant la formation de groupes amino à partir de composés contenant des groupes hydroxy ou des groupes hydroxy éthérifiés ou estérifiés
C07C 219/32 - Composés contenant des groupes amino et hydroxy estérifiés liés au même squelette carboné ayant des groupes amino liés à des atomes de carbone de cycles aromatiques à six chaînons et des groupes hydroxy estérifiés liés à des atomes de carbone acycliques ou à des atomes de carbone de cycles autres que des cycles aromatiques à six chaînons du même squelette carboné
C07C 221/00 - Préparation de composés contenant des groupes amino et des atomes d'oxygène, liés par des liaisons doubles, liés au même squelette carboné
C07C 225/22 - Composés contenant des groupes amino et des atomes d'oxygène, liés par des liaisons doubles, liés au même squelette carboné, au moins un des atomes d'oxygène, liés par des liaisons doubles, ne faisant pas partie d'un groupe —CHO, p. ex. aminocétones ayant des groupes amino liés à des atomes de carbone de cycles aromatiques à six chaînons du squelette carboné
C07C 227/06 - Formation de groupes amino dans des composés contenant des groupes carboxyle par des réactions d'addition ou de substitution, sans augmentation du nombre d'atomes de carbone dans le squelette carboné de l'acide
C07C 229/40 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino liés à des atomes de carbone d'au moins un cycle aromatique à six chaînons et des groupes carboxyle liés à des atomes de carbone acycliques du même squelette carboné
C07C 229/42 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino liés à des atomes de carbone d'au moins un cycle aromatique à six chaînons et des groupes carboxyle liés à des atomes de carbone acycliques du même squelette carboné avec des groupes carboxyle reliés au cycle aromatique à six chaînons, ou au système cyclique condensé contenant ce cycle, par l'intermédiaire de chaînes carbonées saturées
C07C 229/44 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino liés à des atomes de carbone d'au moins un cycle aromatique à six chaînons et des groupes carboxyle liés à des atomes de carbone acycliques du même squelette carboné avec des groupes carboxyle reliés au cycle aromatique à six chaînons, ou au système cyclique condensé contenant ce cycle, par l'intermédiaire de chaînes carbonées non saturées
C07C 229/60 - Composés contenant des groupes amino et carboxyle liés au même squelette carboné ayant des groupes amino et carboxyle liés à des atomes de carbone de cycles aromatiques à six chaînons du même squelette carboné avec des groupes amino et carboxyle liés à des atomes de carbone du même cycle aromatique à six chaînons non condensé avec des groupes amino et carboxyle liés en positions méta ou para
C07C 253/30 - Préparation de nitriles d'acides carboxyliques par des réactions n'impliquant pas la formation de groupes cyano
C07C 255/58 - Nitriles d'acides carboxyliques ayant des groupes cyano liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné contenant des groupes cyano et des atomes d'azote, liés par des liaisons simples et n'étant pas liés de plus à d'autres hétéro-atomes, liés au squelette carboné
C07C 271/22 - Esters des acides carbamiques ayant des atomes d'oxygène de groupes carbamate liés à des atomes de carbone acycliques avec les atomes d'azote des groupes carbamate liés à des atomes d'hydrogène ou à des atomes de carbone acycliques à des atomes de carbone de radicaux hydrocarbonés substitués par des groupes carboxyle
C07D 311/74 - Benzo [b] pyrannes, hydrogénés dans le carbocycle
22.
RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR REDUCING ENVIRONMENTAL LOAD
A resist underlayer film-forming composition containing: a first component; a second component; and a solvent, in which the second component is a water-soluble polymer, a mass ratio (first component:second component) between the first component and the second component is 99:1 to 50:50, and the solvent contains water in an amount of 50 mass % or more relative to the solvent.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
23.
COMPOSITION FOR FORMING ELECTRODE, ADDITIVE, AND GELLING INHIBITOR
This composition for forming an electrode contains a compound having a ring structure and an unsaturated bond, a positive electrode active material, a binder, and a solvent, wherein the compound has dissociative protons in each molecule, the bond dissociation energy of the compound is less than 397.27 (kJ/mol), and the highest occupied molecular orbital (HOMO) of the compound is greater than –0.28384 (a.u.).
H01M 4/13 - Électrodes pour accumulateurs à électrolyte non aqueux, p. ex. pour accumulateurs au lithiumLeurs procédés de fabrication
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p. ex. liants, charges
H01M 4/131 - Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p. ex. LiCoOx
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p. ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/1391 - Procédés de fabrication d'électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p. ex. LiCoOx
24.
SILICA SOL DISPERSED IN NITROGEN-CONTAINING ORGANIC SOLVENT CONTAINING ORGANIC ACID, AND INSULATING RESIN COMPOSITION
Provided are: a silica sol dispersed in a nitrogen-containing organic solvent that contains an organic acid; and an insulating resin composition containing the silica sol and a nitrogen-containing polymer. This silica sol is obtained by dispersing silica particles having an average primary particle size of 5-100 nm in a nitrogen-containing organic solvent. In the silica sol, a carboxylic acid having 1-3 carbon atoms is contained at a proportion of 80-1500 ppm. In the silica sol, the nitrogen-containing organic solvent is an amide-based solvent. In the silica sol, the nitrogen-containing organic solvent is dimethylacetamide, dimethylformamide, or dimethylpropionamide. In the silica sol, the carboxylic acid having 1-3 carbon atoms is formic acid, acetic acid, or propionic acid. This insulating resin composition contains the silica sol and a nitrogen-containing polymer.
[Problem] To provide a resin composition comprising zinc cyanurate that exhibits high adhesive strength, is particularly suitable for adhering metal substrates to each other and adhering a metal substrate and a different substrate, and can maintain adhesive strength even under hot and humid conditions. [Solution] Provided are: resin composition comprising zinc cyanurate, a cyanuric acid derivative, and a resin component; and a joined body of a cured product of the resin composition, in which the joining surface is a metal or a metal oxide.
The present invention provides a pyrazole compound represented by formula (1) or a salt thereof, and a novel bactericide, particularly, a bactericide for agricultural and horticultural use, containing the compound as an active ingredient. The formula describes a structure in which: G represents G-1; G1166 alkyl or the like; RX166 alkyl or the like; RYrepresents a hydrogen atom or the like; R1represents a hydrogen atom or the like; R2represents a hydrogen atom or the like; R3represents a hydrogen atom or the like; R4represents a hydrogen atom or the like, R5represents a hydrogen atom or the like, Z1represents E-1 or the like; Za166 alkyl or the like; Z2166 alkyl or the like; m5 represents an integer of 0, 1, 2, 3, 4 or 5; n4 represents an integer of 0, 1, 2, 3 or 4; p represents an integer of 0 or 1; and v2 represents an integer of 0, 1 or 2.
A01N 43/80 - Biocides, produits repoussant ou attirant les animaux nuisibles, ou régulateurs de croissance des végétaux, contenant des composés hétérocycliques comportant des cycles avec des atomes d'azote et des atomes d'oxygène ou de soufre, comme hétéro-atomes du cycle des cycles à cinq chaînons avec un atome d'azote et soit un atome d'oxygène, soit un atome de soufre, en positions 1,2
A01N 43/84 - Biocides, produits repoussant ou attirant les animaux nuisibles, ou régulateurs de croissance des végétaux, contenant des composés hétérocycliques comportant des cycles avec des atomes d'azote et des atomes d'oxygène ou de soufre, comme hétéro-atomes du cycle des cycles à six chaînons avec un atome d'azote et soit un atome d'oxygène, soit un atome de soufre, en positions 1,4
A61K 31/4439 - Pyridines non condenséesLeurs dérivés hydrogénés contenant d'autres systèmes hétérocycliques contenant un cycle à cinq chaînons avec l'azote comme hétéro-atome du cycle, p. ex. oméprazole
C07D 403/12 - Composés hétérocycliques contenant plusieurs hétérocycles, comportant des atomes d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07D 413/12 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes d'azote et d'oxygène comme uniques hétéro-atomes du cycle contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07D 413/14 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes d'azote et d'oxygène comme uniques hétéro-atomes du cycle contenant au moins trois hétérocycles
C07D 417/12 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes de soufre et d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
27.
SURFACTANT-CONTAINING SURFACE-TREATED SILICA SOL AND METHOD FOR PRODUCING SAME
[Problem] To provide a composition having excellent dispersion stability of silica particles under high temperature and/or high salt concentration conditions and having excellent salt resistance. [Solution] This composition comprises surface-modified silica particles, a surfactant, and a solvent, wherein, when the composition is diluted to a silica concentration of 2 mass% with a 5 mM sodium tetraborate aqueous solution to prepare a test solution, and affinity capillary electrophoresis is conducted under conditions of a capillary temperature of 25°C, a capillary applied voltage of 30 kV, a capillary inner diameter of 75 μm, a total capillary length of 112.5 cm, and an effective capillary length of 104 cm, using the surface-modified silica particles as a ligand and a surfactant containing an anionic surfactant, a nonionic surfactant, or a mixture of two or more thereof as an analyte, the composition has an electrophoretic mobility of -0.017 to -0.0010 cm2/V·min.
[Problem] To provide a composition which exhibits high stability under conditions of high temperature and high salinity and which contains silica particles, a polyorganosiloxane and a solvent. [Solution] Provided is a composition which contains silica particles, a polyorganosiloxane and a solvent. An organosiloxane in the composition is such that the molecular weight of the polyorganosiloxane, as calculated from a maximum peak measured using a mass analysis device, falls within the range 400-4000. The retention time of the composition, as measured using FFF-MALS under certain conditions, is 9.5 min to 25.0 min.
A wafer end protective-film forming composition for semiconductor manufacturing including: a polymer or compound having a crosslinkable group, and a solvent, wherein the solvent contains a first solvent and a second solvent, and when an evaporation rate of n-butyl acetate is 1, an evaporation rate of the first solvent is 0.10 or more and an evaporation rate of the second solvent is 0.05 or less.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
C08F 22/20 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle
Provided are: a liquid crystal alignment agent from which a liquid crystal alignment film that suppresses AC afterimages can be obtained; the liquid crystal alignment film; and a liquid crystal display element using the liquid crystal alignment film. This liquid crystal alignment agent contains at least one polymer (P) selected from the group consisting of: polyimide precursors each obtained using a tetracarboxylic acid component including at least one selected from the group consisting of tetracarboxylic acid dianhydrides and derivatives thereof, and a diamine component including a diamine represented by formula (2); and polyimides that are imidization products of said polyimide precursors. (In the formula, the definition of each symbol is as defined in the description.)
Provided are a liquid crystal alignment agent from which it is possible to obtain a liquid crystal alignment film having high adhesion between the liquid crystal alignment film and a sealant and high in-plane uniformity of liquid crystal alignment regulation force, a liquid crystal alignment film, and a liquid crystal display element using the liquid crystal alignment film. This liquid crystal alignment agent contains at least one polymer (P) selected from the group consisting of a polyimide precursor obtained using a diamine component that includes a diamine represented by formula (2) and a tetracarboxylic acid component that includes at least one selected from the group consisting of tetracarboxylic acid dianhydrides and derivatives thereof, and a polyimide that is an imidization product of said polyimide precursor. (In the formula, the meaning of each symbol is as defined in the description.)
A protective film forming composition for forming a protective film that protects an inorganic film formed on a surface of a semiconductor substrate against wet etching, the protective film forming composition including:
a polymer having a partial structure represented by Formula (A) and a solvent.
A protective film forming composition for forming a protective film that protects an inorganic film formed on a surface of a semiconductor substrate against wet etching, the protective film forming composition including:
a polymer having a partial structure represented by Formula (A) and a solvent.
A protective film forming composition for forming a protective film that protects an inorganic film formed on a surface of a semiconductor substrate against wet etching, the protective film forming composition including:
a polymer having a partial structure represented by Formula (A) and a solvent.
In Formula (A), R1 is an (n+2)-valent organic group, R2 is a hydrogen atom or an alkyl group having 1 to 13 carbon atoms which may be substituted with a substituent, n is 1 or 2, and * is a bond.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
ELECTRODE PERIPHERAL EMBEDDING MATERIAL, PRE-BAKED FILM OF ELECTRODE PERIPHERAL EMBEDDING MATERIAL, METHOD FOR PRODUCING PRE-BAKED FILM OF ELECTRODE PERIPHERAL EMBEDDING MATERIAL, AND MICRO-LED DISPLAY ELEMENT
Provided is an electrode peripheral embedding material which maintains photosensitivity, flux properties and adhesive properties while suppressing the surface roughening of a patterned structure by improving resistance to a developing solution, and enables patterning with high transparency to be formed. The electrode peripheral embedding material contains component (A): an alkali-soluble resin which is a polymer having a phenolic hydroxyl group, the polymer having a glass transition temperature (Tg) of 60ºC or lower, component (B): a crosslinking agent, component (C): a photosensitizer containing a quinonediazide, and component (D): a solvent. Component (A) is an acrylic polymer containing, as constituent components, constituent units derived from: a monomer (A1) having a phenolic hydroxyl group and a polymerizable unsaturated group; a monomer (A2) that yields a homopolymer having a Tg value of 0ºC or lower and; a monomer (A3) having an aromatic hydrocarbon group. The constituent unit derived from the monomer (A1) accounts for 35-45 mass% of the total mass of component (A).
C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
C08F 267/06 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères d'acides polycarboxyliques non saturés ou de leurs dérivés tels que définis dans le groupe sur des polymères d'esters
C08L 33/14 - Homopolymères ou copolymères des esters d'esters contenant des atomes d'halogène, d'azote, de soufre ou d'oxygène en plus de l'oxygène du radical carboxyle
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
H10H 20/857 - Interconnexions, p. ex. grilles de connexion, fils de connexion ou billes de soudure
The present invention provides a method for manufacturing an emissive display device utilizing photolithography, the method for manufacturing an emissive display device allowing an unwanted resist layer and an unwanted EL layer stacked thereon to be peeled off from the emissive display device without using a peeling solution or a dry etching device. The method is for manufacturing an emissive display device using photolithography patterning. In this method for manufacturing an emissive display device, an EL layer is stacked by using a resist-patterned resist layer as a mask, and after stacking, an unwanted resist layer with the EL layer stacked on the upper side thereof is peeled off from the emissive display device using a mechanical peeling means.
H10K 71/20 - Modification de la forme de la couche active dans les dispositifs, p. ex. mise en forme
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H10K 50/10 - OLED ou diodes électroluminescentes polymères [PLED]
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
A composition containing a nonlinear optically active copolymer, the composition including a solvent with which the nonlinear optically active copolymer is dissolved with high concentration and the composition obtained demonstrates good storage stability. A composition containing a nonlinear optically active copolymer, comprising a nonlinear optically active copolymer and a benzoate.
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
A semiconductor substrate cleaning method includes removing an adhesive layer provided on a semiconductor substrate by use of a remover composition. The remover composition contains a solvent but no salt; the solvent includes one or more species selected from among an aliphatic hydrocarbon compound, an aromatic hydrocarbon compound, an ether compound, a thioether compound, an ester compound, and an amine compound, each having a molecular weight less than 160; and the remover composition exhibits a contact angle smaller than 31.5° with respect to the adhesive layer.
22 nanoparticles; and a solvent. (In the formulae, R1-R422N- and -OH. R5-R6each independently represent an alkyl group that has 1-6 carbon atoms and is optionally substituted with a hydroxy group, and the alkyl group optionally has an oxygen atom interposed between carbon atoms. At least one alkyl group of R5and R6 is substituted with a hydroxy group or has an oxygen atom interposed between carbon atoms.)
H10K 50/155 - Couches de transport de trous comprenant des dopants
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H05B 33/22 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition des couches auxiliaires diélectriques ou réfléchissantes
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
To provide a liquid crystal aligning agent for providing a liquid crystal alignment film, in which silver migration is suppressed when a material containing silver is used as an electrode or a wiring of a liquid crystal display device, and which has a high voltage holding ratio even after exposed to high temperature for a long time; a liquid crystal alignment film formed from the liquid crystal aligning agent; and a liquid crystal display device using the film.
To provide a liquid crystal aligning agent for providing a liquid crystal alignment film, in which silver migration is suppressed when a material containing silver is used as an electrode or a wiring of a liquid crystal display device, and which has a high voltage holding ratio even after exposed to high temperature for a long time; a liquid crystal alignment film formed from the liquid crystal aligning agent; and a liquid crystal display device using the film.
A liquid crystal aligning agent comprising the following component (A) and a compound (B) represented by the following formula (1):
component (A): a polymer (A) selected from the group consisting of a polyimide precursor obtained by polymerizing a tetracarboxylic acid derivative component containing at least one compound selected from the group consisting of tetracarboxylic acid dianhydride and its derivative, and a diamine component, and a polyimide which is an imidized product of the polyimide precursor, the polymer (A) having a content of a carboxy group bonded to an aromatic ring of 5 parts by mass or less per 100 parts by mass of the polymer;
To provide a liquid crystal aligning agent for providing a liquid crystal alignment film, in which silver migration is suppressed when a material containing silver is used as an electrode or a wiring of a liquid crystal display device, and which has a high voltage holding ratio even after exposed to high temperature for a long time; a liquid crystal alignment film formed from the liquid crystal aligning agent; and a liquid crystal display device using the film.
A liquid crystal aligning agent comprising the following component (A) and a compound (B) represented by the following formula (1):
component (A): a polymer (A) selected from the group consisting of a polyimide precursor obtained by polymerizing a tetracarboxylic acid derivative component containing at least one compound selected from the group consisting of tetracarboxylic acid dianhydride and its derivative, and a diamine component, and a polyimide which is an imidized product of the polyimide precursor, the polymer (A) having a content of a carboxy group bonded to an aromatic ring of 5 parts by mass or less per 100 parts by mass of the polymer;
wherein A1 is a monovalent group having a trialkoxysilyl group or a hydrogen atom, and A2 are each independently a C1-4 alkyl group, a carboxy group or a hydrogen atom.
A laminate debonding method includes producing a laminate by joining a first substrate formed of a semiconductor-forming substrate to a second substrate formed of a support substrate which allows passage of infrared laser light, by the mediation of a first adhesive layer provided on the first substrate and a second adhesive layer provided on the second substrate, wherein the first adhesive layer is obtained by curing an adhesive (A) containing a component which is cured through hydrosilylation, and the second adhesive layer is obtained by use of an adhesive (B) formed of a polymer adhesive having an aromatic ring in at least one of a main chain and a side chain and which allows passage of infrared laser light; and irradiating the laminate with infrared laser light from a second substrate side for debonding the second substrate at the interface between the first and second adhesive layers.
C09J 5/04 - Procédés de collage en généralProcédés de collage non prévus ailleurs, p. ex. relatifs aux amorces comprenant une application séparée de produits adhésifs sur les différentes surfaces à joindre
B32B 7/12 - Liaison entre couches utilisant des adhésifs interposés ou des matériaux interposés ayant des propriétés adhésives
B32B 37/12 - Procédés ou dispositifs pour la stratification, p. ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par l'usage d'adhésifs
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p. ex. réparationAppareils pour ces opérations
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
40.
ADHESIVE COMPOSITION, LAMINATE, AND PRODUCTION METHOD FOR PROCESSED SEMICONDUCTOR SUBSTRATE
Provided is an adhesive composition for forming an adhesive layer to be used in temporarily bonding a semiconductor substrate or an electronic device layer and a support substrate, wherein: after the semiconductor substrate or the electronic device layer and the support substrate are temporarily bonded via the adhesive layer, the force required for inserting a material having a sharp portion between the semiconductor substrate or the electronic device layer and the support substrate when the semiconductor substrate or the electronic device layer is mechanically peeled from the support substrate using the aforementioned material is 10.0 kgf or lower; and the storage elastic modulus of the adhesive layer is 30 MPa or higher.
This adhesive composition for forming an adhesive layer used for temporarily bonding a semiconductor substrate or an electronic device layer and a support substrate, the adhesive composition containing a release agent component, the absolute value of the difference (A - B) between surface free energy (A) of the semiconductor substrate or the electronic device layer and surface free energy (B) of the release agent component being 20 mN/m or less.
As a charge-transporting composition that is suitable for forming a charge-transporting thin film of a photoelectric conversion element, and, in particular, is capable of significantly improving the photoelectric conversion efficiency of an obtained element when used as a hole-trapping layer of a perovskite-type solar cell, provided is a charge-transporting composition for forming a charge-transporting thin film in an organic photoelectric conversion element, the composition comprising a charge-transporting substance, an electron-accepting dopant substance, and an organic solvent, and the charge-transporting substance comprising at least one polyimide-based polymer selected from the group consisting of polyimide precursors obtained from a tetracarboxylic acid component and a diamine component having any structure represented by formulas (1)-(3), esters of the polyimide precursors, and imidized products of the polyimide precursors. (In the formulas, R1 represents a hydrogen atom or a monovalent organic group, and * indicates a site to be bonded to another group. Any hydrogen atom forming a benzene ring may be substituted with a monovalent organic group.)
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
H10K 30/40 - Dispositifs organiques sensibles au rayonnement infrarouge, à la lumière, au rayonnement électromagnétique de plus courte longueur d'onde ou au rayonnement corpusculaire comprenant une structure p-i-n, ayant p. ex. un absorbeur pérovskite entre des couches de transport de charge de type p et de type n
H10K 30/86 - Couches à haute mobilité des trous, p. ex. de transport des trous ou couches de blocage des électrons
Provided is an adhesive composition containing two or more kinds of release agent components, wherein one of the two or more kinds of release agent components is an epoxy group-containing polyorganosiloxane having an epoxy value of greater than 0.02 mol/kg.
This resist underlayer film formation composition contains a resin (A), a solvent (B), and a surfactant (C). The surfactant (C) is a copolymer containing a constituent unit derived from a specific monomer.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
C08L 101/00 - Compositions contenant des composés macromoléculaires non spécifiés
A protective-film forming composition for forming a protective film that protects an inorganic film formed on a surface of a semiconductor substrate against wet etching, the composition containing: a polymer that contains no aromatic ring in a main chain and contains at least one of an oxirane ring and an oxetane ring; and a solvent.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
G03F 7/16 - Procédés de couchageAppareillages à cet effet
G03F 7/40 - Traitement après le dépouillement selon l'image, p. ex. émaillage
47.
COMPOSITION FOR FORMING CURED FILM, CURED FILM, ALIGNMENT MATERIAL, AND RETARDATION MATERIAL
Provided is a composition which is for forming a cured film, and from which a cured film having excellent adhesion to a liquid crystal layer even under high temperature and high humidity conditions and having excellent liquid crystal aligning ability can be formed. The composition for forming a cured film contains the following components (A), (B), (E), (F), and (G). Component (A) is a compound having a photoalignable group, component (B) is a crosslinking agent having a hydroxymethyl group or an alkoxymethyl group, component (E) is a compound having a polymerizable group and a hydroxy group, component (F) is a crosslinking catalyst, and component (G) is a photobase generator.
The present invention addresses the problem of providing a silica sol in which silica particles are dispersed in a nitrogen-containing solvent and which is for mixing with a polyimide-based or polyamide-based polar resin with which the silica particles have good compatibility, and of providing an insulating resin composition in which the silica sol and the resin are combined, and an insulated and covered conductive wire which maintains high insulation life over a long period of time. Said problem is solved by means of a silica sol in which silica particles are dispersed in a nitrogen-containing solvent, wherein the silica particles have an average primary particle size of 5-100 nm, the surfaces of at least a portion of the silica particles are coated with a hydrolysate of a carboxylic acid-based silane coupling agent (a), and the degree of hydrophobization as determined by methanol titration is 0.8 vol% or higher.
C08L 77/00 - Compositions contenant des polyamides obtenus par des réactions créant une liaison amide carboxylique dans la chaîne principaleCompositions contenant des dérivés de tels polymères
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
A polishing composition having silica-based abrasive grains and a polishing method. A polishing composition having silica particles, wherein on the basis of a colloidal silica dispersion of the silica particles, the dispersion has an Rsp of 0.15 to 0.7 as measured using pulse NMR, and the colloidal silica particles have a shape coefficient SF1 of 1.20 to 1.80, wherein Rsp is calculated based on equation (1):
A polishing composition having silica-based abrasive grains and a polishing method. A polishing composition having silica particles, wherein on the basis of a colloidal silica dispersion of the silica particles, the dispersion has an Rsp of 0.15 to 0.7 as measured using pulse NMR, and the colloidal silica particles have a shape coefficient SF1 of 1.20 to 1.80, wherein Rsp is calculated based on equation (1):
Rsp
=
(
Rav
-
Rb
)
/
(
Rb
)
(
1
)
(wherein Rsp is an index that indicates water affinity; Rav is an inverse of a relaxation time of the colloidal silica dispersion; and Rb is an inverse of a relaxation time of a blank aqueous solution obtained by removing the silica particles from the colloidal silica dispersion), and the shape coefficient SF1 is calculated based on equation (2):
A polishing composition having silica-based abrasive grains and a polishing method. A polishing composition having silica particles, wherein on the basis of a colloidal silica dispersion of the silica particles, the dispersion has an Rsp of 0.15 to 0.7 as measured using pulse NMR, and the colloidal silica particles have a shape coefficient SF1 of 1.20 to 1.80, wherein Rsp is calculated based on equation (1):
Rsp
=
(
Rav
-
Rb
)
/
(
Rb
)
(
1
)
(wherein Rsp is an index that indicates water affinity; Rav is an inverse of a relaxation time of the colloidal silica dispersion; and Rb is an inverse of a relaxation time of a blank aqueous solution obtained by removing the silica particles from the colloidal silica dispersion), and the shape coefficient SF1 is calculated based on equation (2):
SF
1
=
(
area
of
a
circle
whose
diameter
is
a
maximum
diameter
of
the
particle
)
/
(
projected
area
)
.
(
2
)
The present invention addresses the problem of providing a silica sol in which silica particles are dispersed in a nitrogen-containing solvent and which is for mixing with a polyimide-based or polyamide-based polar resin with which the silica particles have good compatibility, and of providing an insulating resin composition in which the silica sol and the resin are combined, and an insulated and covered conductive wire which maintains high insulation life over a long period of time. Said problem is solved by means of a silica sol in which silica particles are dispersed in a nitrogen-containing solvent, wherein the silica particles have an average primary particle size of 5-100 nm, and the surfaces of at least a portion of the silica particles are coated with a hydrolysate of a carboxylic acid–based silane coupling agent (a) and a hydrolysate of a non-carboxylic acid–based silane coupling agent (b).
B01J 13/00 - Chimie des colloïdes, p. ex. production de substances colloïdales ou de leurs solutions, non prévue ailleursFabrication de microcapsules ou de microbilles
C08L 77/00 - Compositions contenant des polyamides obtenus par des réactions créant une liaison amide carboxylique dans la chaîne principaleCompositions contenant des dérivés de tels polymères
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
The present invention provides: a liquid crystal alignment film in which generated charge can be reduced in a short time, while reducing the absolute value of accumulated charge; and a liquid crystal alignment agent that enables achievement of a liquid crystal alignment film in which flickering and charge accumulation attributable to the light of backlight are reduced. Disclosed is a liquid crystal alignment agent which is characterized by containing at least one polymer (PO) that is selected from the group consisting of: a polyimide precursor having a partial structure (a0) represented by formula (0); and a polyimide that is an imidized product of the polyimide precursor. (In the formula, the definition of each symbol is as defined in the description.)
An ammonia production method involves producing ammonia from nitrogen molecules, in a production device for performing electrolysis, in the presence of a metal complex and a solid catalyst in a cathode, by providing electrons from a power source, protons from a proton source, and nitrogen molecules from a means for supplying nitrogen gas, and by providing hydrogen molecules by sending hydrogen molecules to an anode including sending hydrogen gas produced at the cathode to the anode. Concerning a metal complex and a solid catalyst, as the metal complex, rac-ethylenebis(4,5,6,7-tetrahydro-1-indenyl) zirconium dichloride or the like is used, and as the solid catalyst, a metal catalyst or the like is used.
A method for improving hardness of a baked product, including baking a composition including a compound containing one or more structures of the following Formula (1) at 400° C. to 600° C. under an inert gas atmosphere to increase hardness of an obtained baked product by 10% or more compare to hardness of a baked product at 350° C. under an air atmosphere; a resist underlayer film for use in a lithography process composed of the baked product; a method of the resist underlayer film; and a method of producing a semiconductor device:
A method for improving hardness of a baked product, including baking a composition including a compound containing one or more structures of the following Formula (1) at 400° C. to 600° C. under an inert gas atmosphere to increase hardness of an obtained baked product by 10% or more compare to hardness of a baked product at 350° C. under an air atmosphere; a resist underlayer film for use in a lithography process composed of the baked product; a method of the resist underlayer film; and a method of producing a semiconductor device:
G03F 7/039 - Composés macromoléculaires photodégradables, p. ex. réserves positives sensibles aux électrons
C08L 101/02 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par la présence de groupes déterminés
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
H01L 21/308 - Traitement chimique ou électrique, p. ex. gravure électrolytique en utilisant des masques
54.
CHARGE-TRANSPORTING INK COMPOSITION AND INK COMPOSITION FOR UPPER LAYER FILM OF QUANTUM DOT LAYER
Provided is a charge-transporting ink composition capable of suppressing PL quenching of an element obtained therefrom while having practical charge-transporting properties. The charge-transporting ink composition comprises a solvent, a compound having a thiol group or a thio-ureido group, and nanoparticles of at least one metal oxide selected from the group consisting of: oxides of metals selected from the group consisting of Ti, Fe, Zr, Sn, Ta, Nb, Y, Mo, W, Pb, In, Bi, and Sr; and complexes of at least two of the same.
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H05B 33/22 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition des couches auxiliaires diélectriques ou réfléchissantes
H10K 50/17 - Couches d'injection des porteurs de charge
H10K 50/18 - Couches de blocage des porteurs de charge
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
H10K 71/12 - Dépôt d'une matière active organique en utilisant un dépôt liquide, p. ex. revêtement par centrifugation
H10K 85/40 - Composés organosiliciés, p. ex. pentacène TIPS
H10K 85/60 - Composés organiques à faible poids moléculaire
[Problem] To provide a curable composition for forming a hard coat layer having excellent wear resistance, excellent slipperiness, and excellent elastic modulus. [Solution] The curable composition for forming a hard coat layer comprises (a) a polyfunctional (meth)acrylate monomer, (b) a surface modifier, (c) a polymerization initiator, and (d) an electroconductive polymer material. The content of the electroconductive polymer material (d) is 5.5-15 parts by mass with respect to 100 parts by mass of the polyfunctional (meth)acrylate monomer (a). With respect to a hard coat layer that is a cured product of the curable composition for forming a hard coat layer, the water contact angle after a wear resistance test is 90 degrees or more, the surface of the hard coat layer has a coefficient of kinetic friction of 0.30 or less, and the surface energy of the hard coat layer is 35 dyne/cm or less. With respect to the surface of the hard coat layer, the indentation hardness measured by the nanoindentation method is 0.25 GPa or more and less than 0.45 GPa, and the indentation elastic modulus measured by the nanoindentation method is 3 GPa or more.
C09D 181/00 - Compositions de revêtement à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du soufre, avec ou sans azote, oxygène ou carboneCompositions de revêtement à base de polysulfonesCompositions de revêtement à base de dérivés de tels polymères
G02B 1/14 - Revêtements protecteurs, p. ex. revêtements durs
G02B 1/16 - Revêtements optiques obtenus par application sur les éléments optiques ou par traitement de la surface de ceux-ci ayant un effet antistatique, p. ex. revêtements conducteurs électriques
56.
SILICA PARTICLES FOR COATING COMPOSITION AND LAMINATED SUBSTRATE
2322233. In the silica particles, the ratio of the [specific surface area (C) obtained through the BET method (nitrogen gas adsorption method)] to the [specific surface area (D) converted using a transmission electron microscope] is 1.00-5.00.
A novel method for producing a 2′-modified guanosine compound of the following formula.
A novel method for producing a 2′-modified guanosine compound of the following formula.
A novel method for producing a 2′-modified guanosine compound of the following formula.
In the formula, R1 and R2 are the same as or different from each other and are hydrogen atoms, substitutable C1-6 alkyl groups, substitutable C7-16 aralkyl groups, substitutable C2-6 alkenyl groups, substitutable C2-6 alkynyl groups or substitutable C6-14 aryl groups, n is 0 or 1, when n is 1, P1 is a protecting group bonded to a nitrogen atom through a single bond, and when n is 0, P1 is a protecting group bonded to a nitrogen atom through a double bond.
Provided is a liquid crystal alignment film which is used in low-temperature baking processes and which suppresses AC afterimage even when only a small amount of light irradiation is used in an alignment process using a photoalignment method. Also provided is a liquid crystal alignment film that exhibits good in-plane contrast uniformity. This liquid crystal aligning agent contains at least one polymer (P) selected from the group consisting of: polyimide precursors obtained using a tetracarboxylic acid component that contains at least one selected from the group consisting of tetracarboxylic acid dianhydrides represented by formula (1) and derivatives thereof, and a diamine component that contains a diamine represented by formula (2-1), a diamine represented by formula (2-2), and a diamine represented by formula (2-3); and polyimides that are the imidation products of said polyimide precursors. (The meaning of each symbol in the formulas is as defined in the Description.)
The present invention provides: a liquid crystal alignment film which has good liquid crystal alignment properties while also having excellent pretilt angle expression potency; a liquid crystal display element comprising the liquid crystal alignment film; and a liquid crystal alignment agent that realizes the liquid crystal alignment film. The present invention provides a liquid crystal alignment agent containing: as a component (A), a compound having a photo-alignment group represented by formula (pa-1) and a thermally crosslinkable group, the thermally crosslinkable group being capable of reacting with a carboxy group to form a covalent bond and having a 5% weight loss temperature (Td5) of 250°C or higher; as a component (B), a compound represented by formula (b-1) and having a 5% weight loss temperature (Td5) of less than 250°C; as a component (C), a polyamic acid; and a solvent.
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p. ex. par des couches d'alignement
C07D 303/16 - Composés contenant des cycles oxirane avec des radicaux hydrocarbonés, substitués par des atomes d'oxygène liés par des liaisons simples ou doubles par des radicaux hydroxyle estérifiés
C08G 65/04 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir d'éthers cycliques par ouverture d'un hétérocycle uniquement à partir d'éthers cycliques
C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide-acides ou précurseurs similaires de polyimides
This resin composition contains a solvent and a soluble polyimide which has a structural unit represented by formula (1) and a structural unit represented by formula (2) and which, if the structural unit represented by formula (1) is a structural unit represented by formula (1B), also has a structural unit represented by formula (3) excluding the structural unit represented by formula (1) and/or a structural unit represented by formula (4) excluding the structural unit represented by formula (2). (m in formula (1) represents 0 or 1, R1and R2in formula (2) each independently represent a hydrogen atom, a methyl group, or an ethyl group, A1in formula (3) represents a tetravalent organic group, and A2 in formula (4) represents a divalent organic group.)
1234dd-; a represents an integer of 0-3; and * represents a bonding position) and having a photo-aligning group, an oxetanyl group and a polar group; and, as component (B) a polyamic acid and a solvent.
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p. ex. par des couches d'alignement
C07D 305/06 - Composés hétérocycliques contenant des cycles à quatre chaînons comportant un atome d'oxygène comme unique hétéro-atome du cycle non condensés avec d'autres cycles ne comportant pas de liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques avec uniquement des atomes d'hydrogène, des radicaux hydrocarbonés ou des radicaux hydrocarbonés substitués, liés directement aux atomes du cycle
A photocurable composition including: a self-crosslinking polymer including a first monomer unit including an aryl ketone residue in a side chain, and a second monomer unit including in a side chain an aliphatic hydrocarbon residue including a carbon atom susceptible to a hydrogen abstraction reaction and/or an aromatic ring residue; and a solvent. Also, a method for manufacturing a semiconductor device including the steps of forming a resist film on a semiconductor substrate, forming a resist pattern by irradiating the resist film with light or an electron beam and then developing the resist film, and processing the semiconductor substrate by etching, the method further including a step of forming a protective film from the photocurable composition on the front edge and optionally the bevel and/or the back edge of a wafer for manufacturing a semiconductor.
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
C09D 125/14 - Copolymères du styrène avec des esters non saturés
C09D 133/14 - Homopolymères ou copolymères d'esters d'esters contenant des atomes d'halogène, d'azote, de soufre ou d'oxygène en plus de l'oxygène du radical carboxyle
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/42 - Élimination des réserves ou agents à cet effet
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
66.
PRODUCTION METHOD FOR LIGHT-EMITTING DISPLAY DEVICE
The present invention provides a production method for a light-emitting display device that uses photolithography with a wet process using a non-fluorine-based solvent. Provided is a production method for a light-emitting display device that uses photolithography patterning to produce a light-emitting display device, wherein: a resist layer which is used for resist pattern formation is formed using a positive photosensitive resin composition containing a positive photosensitive component and a solvent; and the solvent, a developing solution which is used for the resist pattern formation, and a removal solution which is used for removal of a resist pattern obtained by the resist pattern formation are each a non-fluorine-based organic solvent.
H10K 71/20 - Modification de la forme de la couche active dans les dispositifs, p. ex. mise en forme
H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H10K 50/10 - OLED ou diodes électroluminescentes polymères [PLED]
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
C09J 183/08 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène
C09J 5/06 - Procédés de collage en généralProcédés de collage non prévus ailleurs, p. ex. relatifs aux amorces comprenant un chauffage de l'adhésif appliqué
C09J 7/40 - Adhésifs sous forme de films ou de pellicules caractérisés par des couches antiadhésives
68.
CONDUCTIVE STANNIC OXIDE PARTICLE-CONTAINING ORGANIC SOLVENT-DISPERSED SOL AND METHOD OF PRODUCTION THEREOF
A modified metal oxide particle sol, when applied as a coating onto a substrate, is capable of having transparency, a high particle refractive index and good coat resistivity. The modified metal oxide particle sol is composed of modified metal oxide particles (iii) in which stannic oxide particles (i) having an average primary particle size of 4 to 50 nm serve as cores and are coated with metal oxide particles (ii) of at least one metal oxide selected from the group consisting of antimony oxide, stannic oxide and silicon oxide and having an average primary particle size of 1 to 10 nm, which modified metal oxide particles (iii) are dispersed in an organic solvent. The average primary particle size of the core particles (i) and the average primary particle size of the coating particles (ii) satisfy the relationship
A modified metal oxide particle sol, when applied as a coating onto a substrate, is capable of having transparency, a high particle refractive index and good coat resistivity. The modified metal oxide particle sol is composed of modified metal oxide particles (iii) in which stannic oxide particles (i) having an average primary particle size of 4 to 50 nm serve as cores and are coated with metal oxide particles (ii) of at least one metal oxide selected from the group consisting of antimony oxide, stannic oxide and silicon oxide and having an average primary particle size of 1 to 10 nm, which modified metal oxide particles (iii) are dispersed in an organic solvent. The average primary particle size of the core particles (i) and the average primary particle size of the coating particles (ii) satisfy the relationship
size of core particles (i)≥size of coating particles (ii),
A modified metal oxide particle sol, when applied as a coating onto a substrate, is capable of having transparency, a high particle refractive index and good coat resistivity. The modified metal oxide particle sol is composed of modified metal oxide particles (iii) in which stannic oxide particles (i) having an average primary particle size of 4 to 50 nm serve as cores and are coated with metal oxide particles (ii) of at least one metal oxide selected from the group consisting of antimony oxide, stannic oxide and silicon oxide and having an average primary particle size of 1 to 10 nm, which modified metal oxide particles (iii) are dispersed in an organic solvent. The average primary particle size of the core particles (i) and the average primary particle size of the coating particles (ii) satisfy the relationship
size of core particles (i)≥size of coating particles (ii),
the ratio (total weight of metal oxides other than stannic oxide)/(weight of stannic oxide) is from 0.005 to 1.0, and the sol includes an amine (a) having a water solubility of 0.1 g/L or more and an amine (b) having a water solubility of less than 0.1 g/L.
[Problem] To provide a polishing composition for use in the polishing of silicon wafers and with which it is possible to achieve a high polishing rate and improve storage stability. [Solution] This polishing composition contains an aqueous silica particle dispersion, wherein the following Rsp value derived from the relaxation times obtained by pulsed NMR measurement of the aqueous silica particle dispersion and pure water is at least 0.01 but less than 0.15: Rsp=(Rav-Rb)/(Rb). Rsp is an indicator that indicates the affinity of the silica particles with water, Rav is the reciprocal of the relaxation time of an aqueous silica particle dispersion having a silica concentration of 5 mass%, and Rb is the reciprocal of the relaxation time of the pure water.
[Problem] To provide a polishing composition which is used for polishing a silicon wafer and can improve polishing speed and storage stability. [Solution] Provided is a polishing composition that contains an aqueous dispersion of silica particles, wherein the Rsp value, which is derived from relaxation times determined from pulse NMR measurements of the aqueous dispersion of silica particles and pure water, is not less than 0.01 and less than 0.15. Rsp=(Rav-Rb)/(Rb) Rsp is an indicator that indicates the affinity of silica particles for water. Rav is the inverse of the relaxation time for an aqueous dispersion of silica particles in which the silica concentration is 5 mass%. Rb is the inverse of the relaxation time for pure water.
A resist underlayer film exhibits excellent removability in a wet etching chemical liquid while mainly exhibiting excellent resistance to a resist solvent or a resist developer. A composition for forming a resist underlayer film for i-line contains a reaction product of a bifunctional or higher glycidyl ester type epoxy resin and a compound A represented by the following Formula (A), and a solvent.
A resist underlayer film exhibits excellent removability in a wet etching chemical liquid while mainly exhibiting excellent resistance to a resist solvent or a resist developer. A composition for forming a resist underlayer film for i-line contains a reaction product of a bifunctional or higher glycidyl ester type epoxy resin and a compound A represented by the following Formula (A), and a solvent.
A resist underlayer film exhibits excellent removability in a wet etching chemical liquid while mainly exhibiting excellent resistance to a resist solvent or a resist developer. A composition for forming a resist underlayer film for i-line contains a reaction product of a bifunctional or higher glycidyl ester type epoxy resin and a compound A represented by the following Formula (A), and a solvent.
(In Formula (A), R1 represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 40 carbon atoms, X represents an alkyl group having 1 to 10 carbon atoms, a hydroxy group, an alkoxy group having 1 to 10 carbon atoms, an alkoxycarbonyl group having 1 to 10 carbon atoms, a halogen atom, a cyano group, a nitro group, or a combination thereof, and n represents an integer from 0 to 4.)
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
72.
SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING UNSATURATED BOND AND CYCLIC STRUCTURE
A silicon-containing resist underlayer film-forming composition for forming a silicon-containing resist underlayer film between a metal-containing resist film and a substrate, the silicon-containing resist underlayer film-forming composition including: a component [A]: a polysiloxane; and a component [C]: a solvent, in which the polysiloxane contains a structural unit derived from a hydrolyzable silane (A) represented by the following Formula (A-1):
A silicon-containing resist underlayer film-forming composition for forming a silicon-containing resist underlayer film between a metal-containing resist film and a substrate, the silicon-containing resist underlayer film-forming composition including: a component [A]: a polysiloxane; and a component [C]: a solvent, in which the polysiloxane contains a structural unit derived from a hydrolyzable silane (A) represented by the following Formula (A-1):
where in Formula (A-1), a represents an integer of 1 to 3, b represents an integer of 0 to 2, a+b represents an integer of 1 to 3, and R1 represents an organic group having an unsaturated bond and a ring structure.
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
C09D 183/06 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/40 - Traitement après le dépouillement selon l'image, p. ex. émaillage
G03F 7/42 - Élimination des réserves ou agents à cet effet
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
73.
POLISHING COMPOSITION HAVING EXCELLENT STORAGE STABILITY AND METHOD FOR PRODUCING SAME
[Problem] To provide a polishing composition for use in the polishing of silicon wafers and with which it is possible to achieve a high polishing rate and improve storage stability. [Solution] This polishing composition contains an aqueous silica particle dispersion, wherein the following Rsp value derived from the relaxation times obtained by pulsed NMR measurement of the aqueous silica particle dispersion and pure water is at least 0.01 but less than 0.15: Rsp=(Rav-Rb)/(Rb). Rsp is an indicator that indicates the affinity of the silica particles with water, Rav is the reciprocal of the relaxation time of an aqueous silica particle dispersion having a silica concentration of 5 mass%, and Rb is the reciprocal of the relaxation time of the pure water.
Provided are: a metal oxide particle (C) with a high coverage in which the surface of a metal oxide particle (A) containing titanium oxide serving as a nucleus is coated with a coating (B), wherein the coverage of the particle (C) in which the particle (A) is coated with the coating (B) is 50%-100%; and a method for measuring the coverage using an electrochemical method. The metal oxide particle (A) serving as a nucleus is a titanium oxide single oxide particle (A1) or a metal oxide particle (A2) which includes titanium oxide and is further combined with at least one metal oxide selected from the group consisting of tin oxide, zirconium oxide, silicon dioxide, zinc oxide, antimony oxide, niobium oxide, iron oxide, and tungsten oxide. The coating (B) is at least one coating (B) selected from the group consisting of electrochemically inert metal oxide particles (B1), an amine (B2), a silane coupling agent (B3), and an organic acid and an organic acid ester (B4).
The present invention provides a method for treating oil-containing wastewater, the method comprising causing dead cells of microorganisms that degrade oil or a component derived from the dead cells to act on oil-containing wastewater.
The present invention provides a pyrazole compound represented by a formula or a salt thereof, and a novel fungicide, in particular, agricultural-horticultural fungicide that contains it as an active ingredient. The formula indicates a structure in which G represents G-1, G1 represents C1-C6 haloalkyl, etc., T represents an oxygen atom, etc., RX represents C1-C6 alkyl, etc., RY represents a hydrogen atom, etc., R1 represents a hydrogen atom, etc., R2 represents a hydrogen atom, etc., R3 represents a hydrogen atom, etc., Ra represents a hydrogen atom, etc., Z represents Z-1, etc., Z1 represents C1-C6 alkyl, etc., m5 and n5 each represent an integer of 0, 1, 2, 3, 4, or 5, and p represents an integer of 0 or 1.
A01N 47/02 - Biocides, produits repoussant ou attirant les animaux nuisibles, ou régulateurs de croissance des végétaux, contenant des composés organiques comportant un atome de carbone ne faisant pas partie d'un cycle et ne comportant pas de liaison à un atome de carbone ou d'hydrogène, p. ex. dérivés de l'acide carbonique l'atome de carbone ne comportant pas de liaison à un atome d'azote
A01N 55/10 - Biocides, produits repoussant ou attirant les animaux nuisibles ou régulateurs de croissance des végétaux, contenant des composés organiques comportant des éléments autres que le carbone, l'hydrogène, les halogènes, l'oxygène, l'azote et le soufre contenant du silicium
A61K 31/4155 - 1,2-Diazoles non condensés et contenant d'autres hétérocycles
A61K 31/4439 - Pyridines non condenséesLeurs dérivés hydrogénés contenant d'autres systèmes hétérocycliques contenant un cycle à cinq chaînons avec l'azote comme hétéro-atome du cycle, p. ex. oméprazole
C07D 401/04 - Composés hétérocycliques contenant plusieurs hétérocycles comportant des atomes d'azote comme uniques hétéro-atomes du cycle, au moins un cycle étant un cycle à six chaînons avec un unique atome d'azote contenant deux hétérocycles liés par une liaison directe de chaînon cyclique à chaînon cyclique
C07D 403/12 - Composés hétérocycliques contenant plusieurs hétérocycles, comportant des atomes d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07D 405/12 - Composés hétérocycliques contenant à la fois un ou plusieurs hétérocycles comportant des atomes d'oxygène comme uniques hétéro-atomes du cycle et un ou plusieurs hétérocycles comportant des atomes d'azote comme uniques hétéro-atomes du cycle contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07D 409/12 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes de soufre comme uniques hétéro-atomes du cycle contenant deux hétérocycles liés par une chaîne contenant des hétéro-atomes comme chaînons
C07F 7/10 - Composés comportant une ou plusieurs liaisons C—Si azotés
77.
ADHESIVE COMPOSITION, LAMINATE, METHOD FOR PRODUCING LAMINATE, AND METHOD FOR PRODUCING PROCESSED SUBSTRATE
Provided is an adhesive composition including: a reaction product (X) of a solid polymer (x1) having a first functional group and a liquid chain compound (x2) having, at a chain terminal, a second functional group capable of reacting with the first functional group, the reaction product (X) having the first functional group or the second functional group; and a liquid crosslinking agent (Y) having the first functional group or the second functional group, provided that when the reaction product (X) has the first functional group, the liquid crosslinking agent (Y) has the second functional group, and when the reaction product (X) has the second functional group, the liquid crosslinking agent (Y) has the first functional group.
C09J 183/14 - Adhésifs à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carboneAdhésifs à base de dérivés de tels polymères dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène
C09J 7/35 - Adhésifs sous forme de films ou de pellicules caractérisés par la composition de l’adhésif activés par chauffage
78.
METHOD FOR PRODUCING AN ADHESIVE COMPOSITION FOR OPTICAL IRRADIATION PEELING
A method for producing an adhesive composition for use in debonding with light irradiation, which composition can achieve debonding through irradiation with light, wherein the adhesive composition contains an adhesive component and carbon black, and the adhesive component contains a component (A) which is cured through hydrosilylation.
C09J 183/14 - Adhésifs à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carboneAdhésifs à base de dérivés de tels polymères dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène
B32B 37/12 - Procédés ou dispositifs pour la stratification, p. ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par l'usage d'adhésifs
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p. ex. réparationAppareils pour ces opérations
C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
C08G 77/50 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène par des liaisons au carbone
C09J 5/00 - Procédés de collage en généralProcédés de collage non prévus ailleurs, p. ex. relatifs aux amorces
C09J 11/04 - Additifs non macromoléculaires inorganiques
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
79.
METAL OXIDE SOL CONTAINING POLYMERIZABLE SILANE COMPOUND AND METHOD FOR PRODUCING SAME
To provide a highly dispersible sol containing metal oxide particles and a plurality of polymerizable functional group-containing silanes, and a varnish containing a thermosetting or photocurable resin using the same. Provided is a metal oxide sol containing a silane compound and metal oxide particles, wherein the silane compound is represented by formula (1): (in formula (1), R1each independently represent an alkoxy group, an acyloxy group, or a halogen group; R2each independently are an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 30 carbon atoms; R3is a hydrogen atom or a methyl group; A1is an alkylene group; A2, A3, and A4each independently are a methylene group or an oxygen atom; one of A2, A3, and A4 is an oxygen atom; and n is an integer of 1 to 3.). The varnish contains the metal oxide sol and a thermosetting or photocurable resin. The varnish is used for nanoimprinting.
A laminate including: a semiconductor substrate; a support substrate; and an adhesive layer provided between the semiconductor substrate and the support substrate, wherein
the adhesive layer is formed from a cured product of an adhesive composition,
the adhesive composition contains a polyorganosiloxane that has an alkenyl group having 2 to 40 carbon atoms and bonded to a silicon atom, a polyorganosiloxane having a Si—H group, a platinum group metal-based catalyst, and a crosslinking inhibitor, and
the crosslinking inhibitor contains at least one of a pyridine ring-containing compound and a phosphorus-containing organic compound.
C09J 183/06 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène
B32B 7/12 - Liaison entre couches utilisant des adhésifs interposés ou des matériaux interposés ayant des propriétés adhésives
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p. ex. réparationAppareils pour ces opérations
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A novel composition for forming a resist underlayer film contains: a polymer (X) which includes structural units the same as or different from each other and having a hydroxymethyl group and a ROCH2— group (R being a monovalent organic group, or a mixture of these), and a linking group linking the aforementioned structural units; and a solvent.
G03F 7/09 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires
C08G 65/38 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule à partir de composés hydroxylés ou de leurs dérivés métalliques dérivés des phénols
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 7/40 - Traitement après le dépouillement selon l'image, p. ex. émaillage
This composition for forming a protective film against a wet etching solution for semiconductors includes: component (A): a film-forming component; component (B): a compound selected from the group consisting of condensed tannin (b1) obtained by polymerizing a compound having a flavanol skeleton, a hydrolyzable tannin (b2) obtained by ester-bonding a sugar to an aromatic compound of gallic acid or ellagic acid, and a flavonoid (b3) derived from a compound having a flavanone skeleton structure; and component (C): a solvent.
[Problem] To provide an optical waveguide having high reliability without changing a refractive index of a core/clad with the lapse of time in addition to transparency and lithography characteristics in an optical communication wavelength band. [Solution] Provided are an optical waveguide and a method for manufacturing the optical waveguide, wherein the optical waveguide includes: a core; a clad which surrounds the entire outer periphery of the core and has a refractive index smaller than that of the core; and a protective layer on at least a portion of the outer peripheral surface of the clad. In a high temperature durability test in which the optical waveguide is stored at 150°C for 1000 hours under the atmosphere, a change ratio of the value of a propagation loss of light having a wavelength of 1.31 μm after the test is 10% or less as compared with the value before the test.
G02B 6/12 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
C08G 59/68 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les catalyseurs utilisés
C08G 77/20 - Polysiloxanes contenant du silicium lié à des groupes aliphatiques non saturés
G02B 6/132 - Circuits optiques intégrés caractérisés par le procédé de fabrication par le dépôt de couches minces
Provided is a composition for patterning which enables use of an alkaline solution in development process carried out after exposure to light in the atmosphere and which has curing properties such that a sufficient thickness can be maintained in an exposed portion even after the development process. A composition for patterning according to the present invention comprises a compound represented by general formula (1) and a resin. [In general formula (1), R1and R2each independently represent any one selected from the group consisting of a hydrogen atom, C1-6 alkyl groups, C2-6 alkenyl groups, aryl groups, and aralkyl groups, R3represents any one group selected from the group consisting of C1-6 alkyl groups, C2-6 alkenyl groups, aryl groups, and aralkyl groups, R4 represents any one group selected from the group consisting of (meth)acryloyl groups, styryl groups, and C2-6 alkenyl groups, and X represents NH or O. n represents an arbitrary integer of 1-5.]
G03F 7/033 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p. ex. composés éthyléniques avec des liants les liants étant des polymères obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone, p. ex. polymères vinyliques
86.
UNDERLAYER FILM MATERIAL FOR SELF-ASSEMBLED MATERIALS
Disclosed is a composition for forming an underlayer film for the formation of an underlayer film of a self-assembled film, the composition containing a polymer which has a unit structure (A) that has an alicyclic hydrocarbon group having a reactive group.
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
The present invention provides a compound which is, as an antisense oligonucleotide that controls the gene expression of RasGRP4 and is capable of treating myositis and rheumatoid arthritis, an antisense oligonucleotide having a nucleobase sequence that contains 8-80 consecutive nucleosides and has at least eight continuous nucleobases which are complementary to a transcript of RasGRP4, or a pharmaceutically acceptable salt thereof.
C12N 15/113 - Acides nucléiques non codants modulant l'expression des gènes, p. ex. oligonucléotides anti-sens
A61K 31/711 - Acides désoxyribonucléiques naturels, c.-à-d. contenant uniquement des 2'-désoxyriboses liés à l'adénine, la guanine, la cytosine ou la thymine et ayant des liaisons 3'-5' phosphodiester
A61K 31/712 - Acides nucléiques ou oligonucléotides ayant des sucres modifiés, c.-à-d. autres que le ribose ou le 2'-désoxyribose
A61K 31/7125 - Acides nucléiques ou oligonucléotides ayant des liaisons internucléosides modifiées, c.-à-d. autres que des liaisons 3'-5' phosphodiester
A61K 47/54 - Préparations médicinales caractérisées par les ingrédients non actifs utilisés, p. ex. les supports ou les additifs inertesAgents de ciblage ou de modification chimiquement liés à l’ingrédient actif l’ingrédient non actif étant chimiquement lié à l’ingrédient actif, p. ex. conjugués polymère-médicament l’ingrédient non actif étant un agent de modification l’agent de modification étant un composé organique
A61P 29/00 - Agents analgésiques, antipyrétiques ou anti-inflammatoires non centraux, p. ex. agents antirhumatismauxMédicaments anti-inflammatoires non stéroïdiens [AINS]
A61P 43/00 - Médicaments pour des utilisations spécifiques, non prévus dans les groupes
88.
COMPOSITION FOR FORMING WAVELENGTH CONVERSION FILM AND USE THEREOF
Provided is a composition that, even when developed after being exposed in air, can form a wavelength conversion film having a high residual film rate and a high conversion efficiency. This composition for forming a wavelength conversion film contains (A) a fluorophore and (B) a binder. The binder (B) contains a compound represented by general formula (1). [In general formula (1), R1and R2each independently represent any one selected from the group consisting of a hydrogen atom, alkyl groups having 1-6 carbon atoms, alkenyl groups having 2-6 carbon atoms, aryl groups, and aralkyl groups, R3represents any one selected from the group consisting of alkyl groups having 1-6 carbon atoms, alkenyl groups having 2-6 carbon atoms, aryl groups, and aralkyl groups, R4 represents any one selected from the group consisting of (meth)acryloyl groups, styryl groups, and alkenyl groups having 2-6 carbon atoms, and X represents NH or O. n represents an arbitrarily defined integer of 1-5.]
G03F 7/027 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p. ex. composés éthyléniques
G03F 7/032 - Composés photopolymérisables non macromoléculaires contenant des doubles liaisons carbone-carbone, p. ex. composés éthyléniques avec des liants
89.
COMPOSITION FOR FORMING CURED FILM, ALIGNMENT MATERIAL, AND PHASE DIFFERENCE MATERIAL
[PROBLEM] To provide a composition for forming a cured film capable of suppressing an increase in formaldehyde concentration over time. [SOLUTION] Provided is a composition for forming a cured film, said composition including a compound having a photo-aligning group as a component (A), a polymer having a structural unit having an N-hydroxymethyl group or an N-alkoxymethyl group as a component (B), a basic compound that is not derived from a thermal acid generator (D), described below, or a weak acid salt thereof, as a component (C), and the thermal acid generator as component (D). Further provided are an alignment material and a phase difference material.
A laminate that includes a semiconductor substrate; a support substrate that is light-transmissive; an adhesive layer; and a release layer provided between the semiconductor substrate and the support substrate, the laminate being used when the release layer absorbs light irradiated from a side of the support substrate and then the semiconductor substrate and the support substrate are separated from each other, wherein the release layer is formed from a release agent composition, the release agent composition contains a light-absorbing compound having a molecular weight of 2,000 or less, and when the light-absorbing compound is measured for an absorption spectrum in a range of 250 to 800 nm, the absorption spectrum has a local maximum value, which is a maximum absorbance in a range of 250 to 800 nm, between 250 nm and 350 nm.
B32B 7/06 - Liaison entre couches permettant une séparation sans difficultés
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p. ex. réparationAppareils pour ces opérations
C09J 7/30 - Adhésifs sous forme de films ou de pellicules caractérisés par la composition de l’adhésif
C09J 7/40 - Adhésifs sous forme de films ou de pellicules caractérisés par des couches antiadhésives
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
91.
METHOD FOR MANUFACTURING SUBSTRATE WITH ANTIREFLECTION FILM, AND SUBSTRATE WITH ANTIREFLECTION FILM
According to the present invention, it is possible to obtain an antireflection film which has excellent glass cleaner resistance that inhibits the antireflection film from being removed when being wiped with a glass cleaner. An antireflection film formation material (P) contains component (A). Component (A): A polysiloxane (A) which has a styryl group and a ureido group and/or a urea bond, and in which the molar amount of the styryl group included in the polysiloxane is 0.1-70 mol% with respect to 100 mol% of Si atoms.
G02B 1/111 - Revêtements antiréfléchissants utilisant des couches comportant des matériaux organiques
C08G 77/26 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant de l'azote
92.
MEMBRANE FORMATION COMPOSITION, AND GAS PERMEATION MEMBRANE
A membrane-forming composition which comprises a silicone, a solvent for dissolving the silicone, and microparticles and which is used for forming a membrane through application onto a porous substrate, wherein the membrane-forming composition exhibits a permeation speed through the porous substrate of more than 0 μm/s0.5 and 100 μm/s0.5 or less, the permeation speed being determined by the Lucas-Washburn equation.
Provided are: a method for manufacturing an antireflection film-bearing substrate, wherein the method can provide an antireflection film-bearing substrate that can suppress liquid accumulation at an outer peripheral edge of the substrate; and an antireflection film-bearing substrate provided by this manufacturing method. The method for manufacturing an antireflection film-bearing substrate comprises: a step (1) for forming a coating film by applying the following coating liquid (P) to the following substrate (A); and a step (2) for curing the coating film by firing. Coating liquid (P): a coating liquid containing a polysiloxane (P) as a polymer component, wherein the coating liquid has a viscosity of 0.3 to 100 mPa·s and a surface tension of 20 to 40 mN/m. Substrate (A): the substrate has a chamfering treatment R executed at a first corner angle that is formed between a substrate end surface and a substrate main surface on which the coating film is formed, wherein the radius of the chamfering treatment R is 0.2 to 3.0 mm, the distance from the outermost peripheral portion of the substrate, where the chamfering treatment R has been performed, is 0.1 to 2.0 mm, and the contact point between the chamfered surface R and the substrate main surface on which the coating film is formed does not have an angle due to a level difference.
B05D 5/06 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir des effets multicolores ou d'autres effets optiques
B05D 3/02 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliquésTraitement ultérieur des revêtements appliqués, p. ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par cuisson
B05D 7/00 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers
B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
C03C 17/30 - Traitement de surface du verre, p. ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement par des matières organiques avec des composés contenant du silicium
As a charge-transporting ink composition which has improved dispersibility of metal oxide nanoparticles in an organic solvent and which enables the achievement of a film that has charge transport properties and excellent flatness, the present invention provides a charge-transporting ink composition that contains: an organic solvent; and surface-treated metal oxide nanoparticles which each have a core that is composed of a nanoparticle of one or more metal oxides selected from the group consisting of oxides of a metal selected from the group consisting of Ti, Fe, Zr, Sn, Ta, Nb, Y, Mo, W, Pb, In, Bi, and Sr, and composites of at least two of these oxides, wherein the surface of the core is coated with a metal oxide, and the surface of the metal oxide is coated with at least one surface treatment agent.
C09K 11/06 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances organiques luminescentes
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
H10K 85/60 - Composés organiques à faible poids moléculaire
95.
COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ASSEMBLY
Disclosed is a composition for forming a silicon-containing underlayer film for the formation of a self-assembled pattern, the composition containing [A] a polysiloxane, [B] not less than 0 part by mass but less than 2 parts by mass of a strongly acidic additive with respect to 100 parts by mass of the polysiloxane, and [C] a solvent, wherein the polysiloxane contains a structural unit that is derived from a hydrolyzable silane (A) represented by formula (A-1). (In formula (A-1), a represents an integer of 1 to 3; b represents an integer of 0 to 2; (a + b) represents an integer of 1 to 3; R1represents an organic group having a ring structure other than an aromatic hydrocarbon ring; and R2 represents a specific group.)
C08L 83/06 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène
G03F 7/11 - Matériaux photosensibles caractérisés par des détails de structure, p. ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p. ex. couches d'ancrage
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
96.
INORGANIC OXIDE PARTICLE, INORGANIC OXIDE PARTICLE DISPERSION AND PREPARATION METHOD THEREOF, AND METHOD FOR PRODUCING SURFACE MODIFIER
A composition for forming a resist underlayer film, containing a solvent and a polymer including a structure represented by formula (A) below.
A composition for forming a resist underlayer film, containing a solvent and a polymer including a structure represented by formula (A) below.
A composition for forming a resist underlayer film, containing a solvent and a polymer including a structure represented by formula (A) below.
In formula (A), * represents a bond.
22 nanoparticles surface-treated with a silane coupling agent represented by formula (S1), a charge-transporting substance, and an organic solvent, wherein the residual silane coupling agent has been removed from the charge-transporting varnish. (Rv1to Rv3each independently represents a hydrogen atom, a chlorine atom, a hydroxy group, or an alkoxy group or the like which may have a substituent; at least one of Rv1to Rv3represents a hydrogen atom, a chlorine atom, a hydroxy group, or an alkoxy group which may have a substituent; L represents a single bond or a C1-10 alkylene group; and Rv4represents a C1-10 alkyl group which may have at least one kind of substituent selected from halogen atoms or the like. When Rv4 is a C1-10 alkyl group which may have a substituent, L is a single bond.)
C09D 7/62 - Adjuvants non macromoléculaires inorganiques modifiés par traitement avec d’autres composés
C09D 181/00 - Compositions de revêtement à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du soufre, avec ou sans azote, oxygène ou carboneCompositions de revêtement à base de polysulfonesCompositions de revêtement à base de dérivés de tels polymères
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H10K 50/10 - OLED ou diodes électroluminescentes polymères [PLED]
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
H10K 50/155 - Couches de transport de trous comprenant des dopants
H10K 50/17 - Couches d'injection des porteurs de charge
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
The aggregation of solids in a catalyst ink used for the fabrication of catalyst layers for a fuel cell is eliminated or reduced to allow the ink to attain improved applicability and by that to offer improved power generation characteristics when used in a catalyst layer for a fuel cell. For example, the present invention resides in a fired body from a mixture including graphene oxide and a nitrogen-containing compound component.
To provide a photoalignment material which uses ultraviolet light having a wavelength of 254 nm most widely used in manufacturing sites for liquid crystal display elements and can obtain good photo-alignment even in low-temperature baking at 200°C or lower, and to provide a process for the same. More specifically, the present invention provides a method for producing a liquid crystal alignment film, the method comprising: a step for exposing, with polarized ultraviolet light having a wavelength of 254 nm (the ratio of light having a wavelength of 254 nm with respect to the total amount of light having wavelengths of 254 nm, 313 nm, and 365 nm, included in the polarized ultraviolet light being 90% or more), an organic film having a polymer (P) obtained by polymerization of polymerizable unsaturated hydrocarbon groups in a monomer component containing a polymerizable compound represented by formula (1); and a step for heating the polymer at a liquid crystallinity development temperature. (In the formula, each parameter is as described in the specification.)
