A wafer cleaning apparatus provided by the present invention comprises a rotary shaft, a chuck arranged on the top of the rotary shaft for retaining the wafer, a fixed shaft coaxially passed through the rotary shaft, and an upper end cover and a lower end cover that block the top and bottom of the fixed shaft respectively. Wherein, the fixed shaft is a hollow shaft with at least one circle of exhaust holes provided on the wall of the fixed shaft. The lower end cover is arranged with a gas inlet port, through which a protective gas is provided to the interior of the fixed shaft. The protective gas forms a positive pressure in the annular space between the fixed shaft and the rotary shaft through the at least one circle of exhaust holes. The present invention provides positive pressure protective gas to the spacing between the fixed shaft and the rotary shaft by opening exhaust holes on the wall of the fixed shaft. A gas seal is formed to prevent contaminants, such as particles and metals, generated in the bottom area of the rotary shaft from diffusing to the back side of the wafer through the annular space between the fixed shaft and the rotary shaft, thereby improving the cleanliness of the back side of the wafer after cleaning.
Disclosed in the present invention is a drying device, comprising an upper cavity, a lower cavity, a base plate tray and a rotating mechanism, wherein the upper cavity is provided with a first locking portion; the lower cavity is arranged below the upper cavity, and the lower cavity is provided with a second locking portion adapted to the first locking portion; the base plate tray is arranged on the lower cavity and is used for bearing a base plate; and the rotating mechanism is used for driving at least one of the upper cavity and the lower cavity to rotate, such that the upper cavity and the lower cavity are tightened by means of the first locking portion and the second locking portion to form a pressure-resistant closed cavity. In the present invention, the upper cavity and the lower cavity are tightened to form a closed cavity, such that supercritical fluid is used in the closed cavity to dry the base plate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F26B 5/04 - Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
3.
AGITATING MECHANISM OF ELECTROPLATING APPARATUS, ELECTROPLATING APPARATUS, AND ELECTROPLATING METHOD
An agitating mechanism of an electroplating apparatus, an electroplating apparatus, and an electroplating method, relating to the technical field of semiconductor manufacturing. The agitating mechanism comprises a blocking area (201) and an agitating area (202); the blocking area (201) is used for weakening a flow field of said area; the agitating area (202) comprises a plurality of first blades (203) arranged in parallel; during the electroplating of a wafer, when a wafer notch (301) is located in the blocking area (201), the rotating speed of the wafer is a first rotating speed, and when the wafer notch (301) is located in the agitating area (202), the rotating speed of the wafer is a second rotating speed, wherein the first rotating speed is less than the second rotating speed; the blocking area (201) is used for reducing the total amount of metal ions received in the blocking area (201) by the wafer notch (301). The blocking area (201) is provided on the agitating mechanism, and the rotating speed of the wafer is controlled to reduce in due time, so that the total amount of metal ions received in the blocking area (201) by the wafer notch (301) is reduced, avoiding the occurrence of excessive electroplating height in the peripheral area of the wafer notch in an electroplating technological process.
The present application relates to a wafer cleaning apparatus. The wafer cleaning apparatus comprises a first cleaning tank, a second cleaning tank, a storage tank, a first heater and a controller, wherein an SPM solution which is discharged from the second cleaning tank is stored by means of the storage tank, and when SPM solution displacement is performed on the first cleaning tank, the storage tank is controlled by means of the controller to convey an SPM solution, which is heated to a preset temperature interval by the first heater, into the first cleaning tank. The problem of a tank-type SPM cleaning device or a combined tank-type and single-wafer SPM cleaning device being unable to further save on an SPM solution is solved, and reuse of the SPM solution is realized, thereby further saving on the SPM solution.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
G05D 23/20 - Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
5.
ELECTROSTATIC ELIMINATING DEVICE AND METHOD FOR ELECTROPLATING APPARATUS
The present invention provides an electrostatic eliminating device and method for an electroplating apparatus. The electrostatic eliminating device for the electroplating apparatus comprises: a blade mounting member, provided with a part located inside an electroplating chamber of the electroplating apparatus and used for mounting a blade; a conductive member, one end thereof being connected to the blade mounting member, and the other end thereof being grounded; and a control member, configured to determine a target state of the electroplating apparatus according to internal state parameters of the electroplating chamber, and control the conductive member to be connected to the ground within the target state. The electrostatic eliminating device and the electrostatic eliminating method for the electroplating apparatus of the present invention can eliminate static electricity gathered inside electroplating chambers.
The present application relates to a wafer cleaning method, used for cleaning a polished wafer surface. The wafer cleaning method comprises: spraying hydrofluoric acid of a first preset concentration on a wafer surface for a first preset time period; brushing in a brushing cavity the wafer surface after spraying; and cleaning in a cleaning cavity the wafer surface having undergone brushing. The present application solves the problem in the prior art of poor cleaning effect for residual grinding liquid on wafers, thereby improving the cleaning effect for residual grinding liquid on wafers.
Disclosed in the present invention is a wafer transfer device with a liquid discharging function, the wafer transfer device comprising a robot arm, a liquid receiving device, a liquid discharging device, a controller and a collecting bin, wherein the liquid receiving device is arranged below the robot arm and moves along with the robot arm so as to receive liquid dripping from the robot arm; the liquid discharging device comprises a liquid discharging pipeline and a control valve, the liquid discharging pipeline being connected to the liquid receiving device, and the control valve being arranged on the liquid discharging pipeline and configured to control the connection and disconnection of the liquid discharging pipeline; the controller is in communication with both the robot arm and the control valve, and is configured to control the movement of the robot arm and the opening and closing of the control valve; and the collecting bin is located at a predetermined liquid discharging position. When the liquid level of liquid in the liquid receiving device reaches a preset liquid level, the controller firstly controls the robot arm to move to the predetermined liquid discharging position, and then controls the control valve to open, and thus the liquid in the liquid receiving device is discharged into the collecting bin through the liquid discharging pipeline. The present invention can control the storage and discharge of liquid in the liquid receiving device, and does not limit the motion of the robot arm and thus does not influence the normal process time of the robot arm.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present application relates to a substrate treatment method and device. The substrate treatment method comprises: a first liquid treatment step: in a cavity that is in a first gas atmosphere, carrying out liquid treatment on a substrate by means of a first liquid, wherein the first gas atmosphere indicates that only a first gas is present in the cavity; a gas atmosphere replacement step: replacing the atmosphere of the cavity from the first gas atmosphere to a second gas atmosphere, wherein the second gas atmosphere indicates that only a second gas is present in the cavity, and the second gas is different from the first gas; and a second liquid treatment step: in the cavity that is in the second gas atmosphere, carrying out liquid treatment on the substrate by means of a second liquid, wherein the second liquid is different from the first liquid. By means of the present application, the problem in the related art of the waste of specialty gases is solved, thereby avoiding the waste of specialty gases, and saving the costs.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An electroplating device and an electroplating method. The electroplating device comprises: an electroplating cavity (100), a wafer holding apparatus (200), a stirring mechanism (300), and a drive mechanism (400), wherein the stirring mechanism (300) is arranged in the electroplating cavity (100), and when the wafer holding apparatus (200) holds a wafer, the stirring mechanism (300) is parallel to the wafer; the drive mechanism (400) is configured to drive the stirring mechanism (300) to perform continuous main-period reciprocating motions parallel to the wafer, such that the stirring mechanism (300) stirs an electroplating solution; each main-period reciprocating motion comprises N continuous sub-period reciprocating motions, N being an integer greater than or equal to 2; and within the same main period, the end-point position of the previous sub-period is the start-point position of the following adjacent sub-period, and the sub-stroke within the same sub-period is a real number greater than 0, the sub-stroke being the distance between the end-point position and the start-point position within the same sub-period. By means of regulating and controlling the motion mode of a stirring mechanism, the present invention achieves the effect of uniform electroplating while improving the electroplating efficiency.
The present application relates to a supercritical drying medium recovery system and a semiconductor wafer drying apparatus. The supercritical drying medium recovery system comprises a separation device; the separation device comprises a condensation pipeline and a first cavity; a liquid discharge port is formed in the lower side wall of the condensation pipeline and is communicated with the first cavity; the inlet of the condensation pipeline is used for receiving an organic solvent-containing drying medium, and the outlet of the condensation pipeline is used for discharging the separated drying medium for recovery, wherein the condensation pipeline is used for condensing the organic solvent in the organic solvent-containing drying medium, so that the organic solvent is condensed into a liquid to flow into the first cavity from the liquid discharge port. The present application solves the problem in the related art of how to recover carbon dioxide in the wafer drying process, realizing carbon dioxide recovery in the wafer drying process.
Disclosed in the present invention are a solution supply device and a semiconductor apparatus. The solution supply device is used for providing a mixed solution for a treatment device, and comprises: a first solution input end; a second solution input end; a first conveying pipeline; a second conveying pipeline; a mixing tank, which is arranged at the junction of the first conveying pipeline and the second conveying pipeline; a main conveying pipeline, which is connected to the mixing tank; a main discharge pipeline, which is connected to the main conveying pipeline between the mixing tank and the treatment device; and a control component, which is in communication connection with the main discharge pipeline and the main conveying pipeline, wherein the control component is used for making the solution, which has unstable flow, be discharged through the main discharge pipeline before the main conveying pipeline provides the mixed solution for the treatment device. By means of the present invention, the effect of improving the precision of volume proportions of chemical components in the mixed solution is achieved.
The present application relates to a sealing method, an electronic apparatus, a storage medium, and semiconductor device. The semiconductor device comprises a splash-proof cover, a splash-proof cover base, a lifting module, a detection module, and a control module. The control module is coupled between the lifting module and the detection module. The lifting module is used for driving the splash-proof cover to lift and lower. The detection module is used for detecting airflow information parameters between the splash-proof cover and the splash-proof cover base. The control module is used for, according to the airflow information parameters, controlling the lifting module to drive the splash-proof cover to lift and lower so as to achieve sealing between the splash-proof cover and the splash-proof cover base. By virtue of the present application, the problem in the existing technology of wafer yield being reduced due to low sealing performance between a splash-proof cover and a splash-proof cover base is solved, the sealing performance between the splash-proof cover and the splash-proof cover base is improved, and the wafer yield is also increased.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed in an embodiment of the present invention is a substrate processing apparatus, comprising a processing chamber, a liquid supply tank and a recovery tank. A first pipeline connects a first liquid inlet and a liquid outlet of the liquid supply tank, so as to circulate the chemical liquid inside the liquid supply tank. A second pipeline connects the first pipeline and a liquid inlet of the processing chamber, so as to transfer the chemical liquid in the liquid supply tank to the processing chamber. A third pipeline connects the first pipeline and a first liquid inlet of the recovery tank, so as to transfer the chemical liquid in the liquid supply tank to the recovery tank. A fourth pipeline connects a liquid outlet of the processing chamber and a second liquid inlet of the recovery tank, so as to return the used chemical liquid in the processing chamber to the recovery tank. A fifth pipeline connects a liquid outlet of the recovery tank and a second liquid inlet of the liquid supply tank, so as to transfer the chemical liquid in the recovery tank back to the liquid supply tank. Wherein, the temperature of the chemical liquid transferred to the recovery tank through the third pipeline is higher than that of the chemical liquid transferred to the recovery tank through the fourth pipeline.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed in the present invention is a substrate carrying structure. The substrate carrying structure comprises: a base, wherein the surface of the base is provided with a carrying area used for carrying a substrate; a plurality of supporting pieces, arranged on a first circumference of the carrying area, wherein a supporting surface is provided at the top end of each supporting piece and used for supporting the substrate; a plurality of guide pieces, arranged on a second circumference on the periphery of the carrying area, wherein the first circumference and the second circumference are concentric circles taking the center of the carrying area as the center of a circle, and the guide pieces are higher than the supporting pieces and used for horizontally limiting the substrate; and a plurality of slide guiding pieces, arranged in the carrying area, wherein the whole or part of each slide guiding piece is located between the first circumference and the second circumference, the slide guiding pieces are not higher than the supporting pieces, a slide guiding surface is provided at the top end of each slide guiding piece, and the friction coefficient of each slide guiding surface is smaller than the friction coefficient of each supporting surface. In the present invention, the effect of improving the substrate guiding capacity of a substrate supporting structure is achieved by means of the structure.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
The present invention relates to the field of semiconductor device manufacturing, and particularly to a liquid treatment device. The liquid treatment device comprises a liquid spraying unit, two side cover plates and two processing plates, wherein the two processing plates are symmetrically arranged on side faces of the liquid spraying unit, and the side cover plates are arranged on the sides of the processing plates away from the liquid spraying unit; a liquid inlet is provided in the top of each processing plate, and a liquid outlet is provided in the bottom of the liquid spraying unit; first grooves are provided on the side surfaces of the processing plates that are opposite the side cover plates, and the side cover plates cover the first grooves to form first cavities; each processing plate is provided with a plurality of first liquid-discharging holes, which are in communication with the lower side of the first cavity; groove-shaped structures are provided on the sides of the liquid spraying unit that are opposite the processing plates, the processing plates cover the groove-shaped structures to form second cavities, and the second cavities are in communication with the first liquid-discharging holes; and the liquid spraying unit is provided with second liquid-discharging holes, which are in communication with the tops of the second cavities, and the second liquid-discharging holes are in communication with the liquid outlet. By means of a single-side U-shaped flow path, the flow speed of liquid flowing around through the liquid outlet is more uniform.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An electroplating apparatus, comprising a membrane frame, wherein the membrane frame comprises a center passage and a center blocking wall defining the center passage, and there is no circle with the center of a substrate as a center in an orthographic projection region of the center blocking wall on a plane where the substrate is located. When the substrate is electroplated in the electroplating apparatus, the trajectory formed by any point in a blocked region of the substrate corresponding to the center blocking wall is a circle with the center of the substrate as a center. Since the center blocking wall is designed such that there is no circle with the center of the substrate as a center in the orthographic projection region of the center blocking wall on the plane where the substrate is located, the rotation trajectory of any point in the blocked region of the substrate corresponding to the center blocking wall would not be completely contained in the range of the orthographic projection region. Therefore, the electric field between any point on the substrate and an anode would not be always blocked by the center blocking wall, and the flow field of an electroplating solution in the blocked region of the substrate would not be significantly reduced. Finally, the sudden change of the electroplated thickness of the blocked region of the substrate is greatly weakened, and the change of the electroplated thickness is basically smooth.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C25D 5/08 - Electroplating with moving electrolyte, e.g. jet electroplating
17.
PROCESS TANK TEMPERATURE-MEASURING DEVICE AND SUBSTRATE PROCESSING APPARATUS
Disclosed in the present invention are a process tank temperature-measuring device and a substrate processing apparatus. The process tank temperature-measuring device is configured to detect the temperature of a chemical liquid in a process tank, and a process tank opening is provided at the upper end of the process tank. The process tank temperature-measuring device comprises: a protective tube, comprising a temperature-measuring part and an extending part, which are connected in sequence and are in conduction with each other, wherein one end of the temperature-measuring part away from the extending part is sealed to form the bottom of the protective tube, one end of the extending part away from the temperature-measuring part is open to form an inlet of the protective tube, and a preset included angle is formed between the temperature-measuring part and the extending part in an axial direction; and a temperature-measuring probe, which is installed inside the temperature-measuring part and located at the bottom of the protective tube. The bottom of the protective tube is configured to be immersed in the chemical liquid of the process tank, such that the temperature-measuring probe detects the temperature of the chemical liquid in the process tank. Moreover, the inlet of the protective tube is formed directly above the opening of the process tank, thereby achieving the effects of a simple structure and high corrosion resistance of the process tank temperature-measuring device.
The present invention relates to the technical field of manufacturing of integrated circuit chips, and specifically to a gas control device. The gas control device comprises an air intake unit, a filter plate, a diffusion plate and an air guide unit, wherein the air intake unit is provided with an opening through which a gas flows to the filter plate, the filter plate is arranged corresponding to the opening, the diffusion plate is arranged below the filter plate, and the gas sequentially passes through the air intake unit, the filter plate and the diffusion plate and is then vertically blown to the surface of a wafer to be processed; and the air guide unit comprises at least one air guide plate, which is arranged at an air guide opening of the air intake unit. The air guide plate is additionally provided in an air intake path, the air guide plate guides the flow of gas to make sectioned gas blow into the air intake unit, and thus maintain the uniform speed of the air blown throughout the surface of the wafer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F24F 13/15 - Air-flow control members, e.g. louvres, grilles, flaps or guide plates movable, e.g. dampers built-up of tilting members, e.g. louvre with parallel simultaneously tiltable lamellae
19.
ELECTROPLATING APPARATUS AND ELECTROPLATING SYSTEM
An electroplating apparatus and an electroplating system. The electroplating apparatus (21) comprises: an electroplating bath (210) used for accommodating an electroplating solution and a substrate (100); a non-soluble anode (213) provided inside the electroplating bath (210) and located below the substrate (100); an anode solution inlet (216) used for supplying the electroplating solution into the electroplating bath; and an anode solution outlet (217) used for discharging the electroplating solution from the electroplating bath. The anode solution inlet (216) is higher than the non-soluble anode (213) and the anode solution outlet (217), such that the electroplating solution flows in a first direction away from the substrate between the anode solution inlet and the anode solution outlet during electroplating; the flow velocity of the electroplating solution in the electroplating bath is set such that the electroplating solution applies an acting force toward the first direction to bubbles generated on the surface of the non-soluble anode; and the acting force is greater than the buoyancy of the bubbles, such that the bubbles are away from the substrate, thereby overcoming the problem of the quality of the substrate being affected due to the non-soluble anode generating more bubbles during electroplating of the substrate.
Disclosed in the present invention is a thin-film deposition apparatus, which is characterized by comprising a processing chamber, which is used for performing thin-film deposition; a gas supply assembly, which is arranged on the top wall of the processing chamber and is used for supplying a process gas into the processing chamber; a heating tray, which is disposed below the gas supply assembly and is used for carrying and heating a substrate; an upper electrode and a lower electrode, which are used for forming a uniform electric field in the processing chamber; and a radio frequency source, which is connected to the upper electrode and the lower electrode for providing a radio frequency power, so as to excite the process gas inside the processing chamber to dissociate into a plasma gas, wherein the plasma gas performs thin-film deposition on the substrate. The sizes of the upper electrode and the lower electrode are the same or differ by +/-10 mm from each other, the diameter of the lower electrode is less than that of the substrate, and the uniform electric field is generated between the upper electrode and the lower electrode. The present invention may ensure the uniform distribution of an electric field in a process cavity, a deposited thin film has good uniformity, and the uniformity of the thin film may also be ensured especially when continuously stacking more than 300 layers or even 1000 layers.
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges
21.
SPLASH-PROOFING DEVICE FOR PHOTORESIST STRIPPING PROCESS, PHOTORESIST STRIPPING APPARATUS, AND CHEMICAL SOLUTION DELIVERY APPARATUS
The present invention relates to the field of semiconductor device manufacturing, and specifically to a splash-proofing device for a photoresist stripping process, a photoresist stripping apparatus, and a chemical solution delivery apparatus. The splash-proofing device is arranged in a chamber, and specifically comprises a blocking assembly, an exhaust assembly, a bearing platform, and a nozzle. The bearing platform is configured to bear a substrate, and the nozzle is arranged above the bearing platform at a preset height. The blocking assembly comprises a protective cover, which surrounds the periphery of the substrate and is used for preventing chemical solution sprayed onto the substrate from splashing into the chamber. The exhaust assembly comprises an exhaust duct and an exhaust hood which are in communication with each other, the exhaust hood being arranged on the periphery of the nozzle, and an air suction port of the exhaust hood being disposed above the substrate; the exhaust assembly is configured to draw splashed chemical solution out of the chamber. The protective cover forms a protective barrier, which can effectively block the chemical solution splashing. The exhaust assembly, by means of air suction, carries the atomized chemical solution away from the exhaust hood and out of the chamber through the exhaust duct, thus further blocking the chemical solution splashing.
B05C 9/02 - Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by groups , or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups , whether or not also using other means
An electroplating device includes a process chamber, a paddle plate and a driving mechanism. The driving mechanism is used for driving the paddle plate to move back and forth to make the paddle plate stir the electroplating solution in the process chamber when a substrate is electroplated. The electroplating device further includes a cleaning assembly and a connecting bracket. The cleaning assembly is used for spraying a cleaning solution onto the electroplated substrate. One end of the connecting bracket is connected to the paddle plate, and the other end of the connecting bracket is connected to the driving mechanism, and the driving mechanism drives the paddle plate to move back and forth via the connecting bracket. The connecting bracket is opened with a hollowed-out area, and the cleaning solution sprayed onto the substrate is collected after passing through the hollowed-out area.
Disclosed is a substrate processing method, which comprises the following steps: S1: transferring a substrate plated with a first metal layer from a first plating chamber to a second plating chamber; S2: after transferring the substrate to the second plating chamber, forming a water film layer on the front side of the substrate; S3: electroplating a second metal layer on the first metal layer. By means of a step of forming a water film layer before electroplating in a plating chamber, the present invention has advantages of preventing delamination between two metal layers and solving product recess abnormality.
Disclosed in the invention is a thin film deposition a device, comprising: a processing chamber; a gas supply assembly, which is arranged on the top wall of the processing chamber; a heating tray, which is arranged below the gas supply assembly for bearing and heating the substrate; a radio frequency source; and a rotating mechanism configured to control the rotation of the substrate, or the rotation of the heating tray, or control the synchronous rotation of the substrate and the heating tray, wherein the rotation shaft for rotation is perpendicular to and passing through the substrate. The radio frequency source is kept in an on state during rotation. According to the method, non-uniformity of the thickness of the thin film deposited on the substrate is compensated, and the uniformity and stability of deposition of the thin film of the PECVD layer stack structure are achieved, and the phenomenon that etching through holes of the thin film deposited on the substrate deviate from the vertical direction in the subsequent etching process is avoided. Therefore, the stability of the performance of a semiconductor device is further guaranteed.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
25.
DRYING APPARATUS AND METHOD BASED ON SUPERCRITICAL FLUID
A drying apparatus is based on supercritical fluid. The drying apparatus includes: an upper cover; a base, arranged below the upper cover and the base and the upper cover; a substrate tray, arranged on the base; a first fluid supply tube, arranged on the top wall of the upper cover; a fluid disturbance plate, arranged below the first fluid supply tube; a second fluid supply tube, arranged on a first side wall of the upper cover; and a fluid discharge tube, arranged on a second side wall of the upper cover. The inner space of the closed chamber can be minimized by using the drying apparatus, thereby saving the usage amount of the supercritical fluid, and reducing the usage costs.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass
The present invention provides a substrate treatment method, comprising: measuring characteristic parameters of a liquid film on the surface of a pre-wetted substrate to generate second characteristic data; obtaining first characteristic data as control data, and comparing the second characteristic data with the contrast data to determine whether a pre-wetting result of the substrate meets the standard; if an error between the first characteristic data and the second characteristic data is greater than a preset value, determining that the pre-wetting result of the substrate does not meet the standard; if the error between the first characteristic data and the second characteristic data is less than or equal to the preset value, determining that the pre-wetting result of the substrate meets the standard; and controlling the next treatment process of the substrate according to the pre-wetting result. The present invention can determine a pre-wetting result of a substrate more efficiently and accurately, and avoid the problem that voids are formed in a TSV of the electroplated substrate when a liquid film on the substrate is uneven after the substrate is pre-wetted. In addition, when the pre-wetting result of one substrate is not ideal repeatedly, a worker can be alerted to perform fault inspection of a machine table, thereby guaranteeing safe production.
G01B 7/06 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width, or thickness for measuring thickness
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
Disclosed in the present invention are a substrate etching method and device. The substrate etching method comprises: immersing a substrate into a treatment tank containing an etching solution, performing wet etching on the substrate by means of the etching solution, and forming a deep structure on the surface of the substrate; and providing gas in the etching solution on the basis of a pulse signal to generate bubbles in the etching solution, wherein a pulse time of the pulse signal comprises a gas supply time period and an intermittent time period, and the intermittent time period depends on diffusion time required for diffusion balance of key components in the deep structure after the end of the gas supply time period.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
28.
APPARATUS AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS
An apparatus for cleaning semiconductor wafers includes a plurality of load ports; at least one first tank, containing cleaning chemical, configured to implement batch cleaning process; one or more second tanks, containing cleaning liquid, configured to implement batch cleaning process; and one or more single wafer cleaning modules. The apparatus further includes: a first turnover device, configured to rotate the one or more wafers from horizontal plane to vertical plane so that the one or more wafers can be vertically transferred to the at least one first tank; and a second turnover device, configured to rotate the one or more wafers from vertical plane to horizontal plane so that the one or more wafers can be horizontally transferred to the one or more single wafer cleaning modules.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
The present invention relates to the field of devices in semiconductor production, and in particular relates to a substrate treatment device. The device comprises a vacuum chamber, a process chamber and a controller, a vacuum manipulator mechanism being provided in the vacuum chamber, and the process chamber being arranged on the periphery of the vacuum chamber. The vacuum manipulator mechanism comprises at least two layers of first bearing parts which are stacked one above the other, the at least two layers of first bearing parts being used for retrieving and placing at least two substrates. At least two process treatment apparatuses are provided in the process chamber, each process treatment apparatus comprising an ejector pin, the ejector pins being used for bearing the substrates, and the controller being used for controlling the vacuum manipulator mechanism to successively retrieve and place the at least two substrates according to different distance values between the top end of the ejector pin in each process treatment apparatus and the bottom of the process chamber. Therefore, the substrate transportation efficiency is improved.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
30.
METHOD AND APPARATUS FOR MONITORING WARPING OF WAFER IN REAL TIME
The present invention relates to the technical field of manufacturing of semiconductor chips, and particularly relates to a method and apparatus for monitoring the warping of a wafer in real time. The method comprises: during the process of depositing a thin film on a wafer, monitoring a heating-power change rate of each heating area on a heating tray in real time, wherein the heating tray comprises at least two heating areas, each heating area is in a set constant-temperature control state, the wafer is arranged on the at least two heating areas, and the wafer is provided with wafer areas corresponding to the respective heating areas; and according to the heating-power change rate, determining whether the wafer area corresponding to the heating-power change rate is separated from the heating tray. During the process of depositing a thin film, a wafer warpage variation is monitored in real time by means of monitoring a change condition of a heating power, without needing an additional metrology tool.
C23C 16/52 - Controlling or regulating the coating process
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
31.
CLEANING METHOD AND DEVICE FOR PACKAGING STRUCTURE
A cleaning method and device for a packaging structure. The cleaning method comprises a negative pressure cleaning process, the negative pressure cleaning process comprising: adjusting the pressure of a chamber where a packaging structure (10) is located to a preset vacuum pressure; rotating the packaging structure; and spraying a cleaning fluid having a preset temperature to the rotating packaging structure so as to carry out negative pressure cleaning on the packaging structure, wherein the preset vacuum pressure is higher than the vaporization pressure of the cleaning fluid at the preset temperature. By using the principle that the surface tension of a cleaning fluid is reduced under a negative pressure condition, the cleaning fluid is promoted to flow in tiny gaps of a packaging structure, and the cleaning fluid is prevented from being vaporized before reaching a part to be cleaned of the packaging structure.
Provided in the present invention is a flipping apparatus, comprising a bracket body, a rotary driver, and a clamping apparatus, a plurality of partition plates being formed on inner side surfaces of two side walls of the bracket body, a carrier slot for the placement of a wafer being formed between each two adjacent partition plates, and rotating shafts being formed on outer side surfaces of the two side walls of the bracket body. The rotary driver is connected to at least one rotating shaft to drive the bracket body to rotate, and the clamping apparatus is disposed on the side wall of the bracket body and is used for pressing or releasing the wafers placed in the carrier slots. In the present invention, by means of the arrangement of the clamping apparatus on the bracket body holding the wafers, the wafers are fixed by the clamping apparatus when the bracket body rotates, effectively avoiding fragments or surface scratches caused by the wafers shaking in the bracket body when the wafers changes posture with the bracket body.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Disclosed in an embodiment of the present invention is an electroplating device, comprising an electroplating tank, a clamp, a positioning cylinder and an anode, wherein the positioning cylinder is located in the electroplating tank; the positioning cylinder is open at one end; the anode is located inside the positioning cylinder, and the positioning cylinder comes in contact with the anode in a sealing manner; and in the entire surface region of the anode, only a first surface comes in contact with an electroplating solution, and the first surface is parallel and opposite to a substrate, with the center of the first surface being aligned with the center of the substrate, and the size of the first surface being similar to that of an effective electroplating region of the substrate. By means of the electroplating device, an electric field generated by the anode is uniformly distributed on the surface of the substrate, thereby improving the uniformity of the electroplating height on the surface of the substrate. Further disclosed in an embodiment of the present invention is an electroplating method using the electroplating device.
Disclosed in the present invention is a furnace tube for plasma enhanced thin film deposition, the furnace tube comprising: a process tube, wherein a reaction chamber and at least one ionization chamber are constructed inside the process tube; a gas supply tube, which is used for conveying to the ionization chamber a process gas to be ionized, said process gas entering inside the reaction chamber after being ionized in the ionization chamber, so as to allow for deposition of a corresponding thin film on the surface of a substrate, or undergo an adsorption reaction to realize layer-by-layer growth of the thin film on the surface of the substrate; and a first electrode and a second electrode, which are located inside the process tube, and are located in the middle of the ionization chamber, wherein the first electrode and/or the second electrode are supported by a baffle, one end of the baffle being connected to a corresponding electrode, and the other end of the baffle being connected to an inner wall of the ionization chamber, thus causing said process gas to pass through the space between the first electrode and the second electrode. The present invention improves the process gas ionization efficiency.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Provided in the present invention is an electroplating device. A solid anode, a meshed anode or a perforated anode is arranged in an anode area to serve as an inert anode, and a constant distance is maintained between the inert anode and a substrate, so as to form a stable electric field on the surface of the substrate, thereby improving the electroplating uniformity; an active anode is arranged below the inert anode in the anode area for continuously supplementing metal ions during an electroplating process, such that the metal ions are more sufficiently transmitted to the substrate, thereby achieving the effect of improving the electroplating uniformity; and parts, such as a rectifying plate, a fluid dispersion pipe or a stirring portion, are arranged in the anode area, such that an anode liquid is uniformly dispersed, thereby further improving the electroplating uniformity.
A thin film deposition device, comprising a controller (100), and a first-stage lifting/lowering mechanism (1), a second-stage lifting/lowering mechanism (2), a rotating mechanism (5), a bearing mechanism (3), and a heating mechanism (4) which are connected to the controller (100). The heating mechanism (4) comprises a heating tray (41); the heating tray (41) is used for heating a wafer (10); the first-stage lifting/lowering mechanism (1) is used for driving the second-stage lifting/lowering mechanism (2), the rotating mechanism (5), the bearing mechanism (3), and the heating mechanism (4) to synchronously ascend and descend so as to finish primary thin film deposition of the wafer (10); the bearing mechanism (3) comprises a guide ring (31) and a guide support shaft (34); the guide support shaft (34) is connected to the guide ring (31); the second-stage lifting/lowering mechanism (2) is used for driving the guide ring (31) to ascend and descend, and enabling the guide ring (31) to be higher than the heating tray (41) when the guide ring (31) bears the wafer (10) to ascend; the rotating mechanism (5) is used for controlling the guide ring (31) to rotate; the guide ring (31) is used for bearing the wafer (10) and driving the wafer (10) to rotate by a preset angle; the wafer (10) continues to undergo secondary thin film deposition. The device can repeat steps of the secondary thin film deposition, thereby compensating for the uneven thickness of a thin film deposited on the wafer (10).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
A deviation measurement device, which is used for measuring the deviation between the center (O) of a substrate (W) and a standard center (O′), and comprises a reference arm (101), a moving arm (103) and a first linear module (102), wherein the moving arm (103) is provided with a first positioning claw (104), and the first positioning claw (104) is used for abutting against two points on an edge of the substrate (W); the reference arm (101) is provided with a second positioning claw (105), and the second positioning claw (105) is used for abutting against two points on the edge of the substrate (W); and the moving arm (103) is arranged opposite the reference arm (101). A connecting line between the center (x1) of the first positioning claw (104) and the center (x2) of the second positioning claw (105) is a straight line L, and the straight line L passes through the standard center (O′); the moving arm (103) can translate along the straight line L under the driving of the first linear module (102); and the first positioning claw (104) pushes the substrate (W) until the first positioning claw (104) and the second positioning claw (105) are simultaneously brought into contact with the edge of the substrate, and at this time, the center (O) of the substrate is located on the straight line L. The deviation between the center (O) of the substrate and the standard center (O′) can be calculated according to the coordinates of the reference arm (101) and the coordinates of the moving arm (103). The substrate (W) may be an oval substrate or a circular substrate having a notch or a flat edge.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
38.
SUBSTRATE PROCESSING APPARATUS AND METHOD, AND COMPUTER READABLE MEDIUM
Disclosed in the present invention are a substrate processing apparatus and method, and a computer readable medium. The substrate processing apparatus comprises a cleaning tank, a first substrate support, and a controller; the cleaning tank is provided with a chemical solution; the first substrate support is used for bearing a substrate; and the controller is used for at least controlling the first substrate support to place a substrate into the cleaning tank or take the substrate out of the cleaning tank, and for dividing a cleaning duration of the substrate in the chemical solution of the cleaning tank into a plurality of preset durations and setting a time interval between any two adjacent preset durations, wherein the controller is used for controlling the first substrate support to take the substrate out of the chemical solution of the cleaning tank within the set time interval so as to release gas generated by etching on the surface of the substrate. According to the present invention, a deposited layer on the substrate can fully react with the chemical solution in an etching removal process, thereby effectively preventing residues of the deposited layer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
Disclosed in an embodiment of the present invention is a substrate heating apparatus, comprising a holding unit, a rotating unit, a heating unit, and a control unit. The heating unit comprises multiple fluid supply pipes and multiple groups of fluid cartridges, a substrate region heated by the fluid cartridges in the same group is a circular ring or a circle, and substrate regions heated by the fluid cartridges in different groups are not overlapped with each other and are concentric. The control unit can measure and adjust the temperatures of the substrate regions in real time. Because the structure of the heating unit is optimally designed and the control unit is added, the substrate heating apparatus of the present invention can adjust the temperatures of the regions on the substrate in real time, so that the temperatures of the regions on the substrate tend to be consistent, and high substrate heating efficiency and high temperature adjustment response speed are achieved. Further disclosed in another embodiment of the present invention is a substrate drying apparatus.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
40.
ANTI-BACKFLOW APPARATUS AND SUBSTRATE TREATMENT DEVICE
An anti-backflow apparatus, comprising a containing cup (141), a protective cover (142), and an exhaust unit. An opening (1411) is formed on the upper portion of the containing cup (141); the protective cover (142) covers the opening (1411) of the containing cup (141) and is provided with a liquid receiving port (1421) and an exhaust port (1422); the liquid receiving port (1421) is used for a nozzle (130) to drip chemical liquid into the containing cup (141); and the exhaust unit is connected to the interior of the containing cup (141) by means of the exhaust port (1422) of the protective cover (142), so as to suction volatile gas inside the containing cup (141), so that the volatile gas inside the containing cup (141) can be effectively prevented from flowing back into a process chamber (10) of a substrate treatment device (1), and corrosion of the surface of a substrate (W) inside the process chamber (10) by the volatile gas is avoided. Also disclosed is the substrate treatment device (1) comprising the anti-backflow apparatus.
B08B 15/02 - Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area using chambers or hoods covering the area
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
41.
ELECTROPLATING APPARATUS AND ELECTROPLATING METHOD FOR NON-CIRCULAR SUBSTRATE
The present invention disclosed an electroplating apparatus for non-circular substrate, comprising a central electrode area, a peripheral electrode area, a power supply unit and a control device. The size of the central electrode area is the inscribed circle of the non-circular substrate, and the central electrode is arranged in the central electrode area. The peripheral electrode area surrounds the central electrode area. The peripheral size of the peripheral electrode area is the circumscribed circle of the non-circular substrate. The peripheral electrode area is provided with closely arranged point electrodes, and the point electrodes fill the peripheral electrode area. The power supply unit supply power to the central electrode and the point electrodes. The control device is connected between the power supply unit, the central electrode and the point electrodes and controls the on-off of the central electrode and the point electrodes. The control device tracks the rotating position of the substrate, so that the electrodes in the central electrode area and the peripheral electrode area covered by the substrate will be turned on and the electrodes not covered by the substrate will be turned off. The present invention also disclosed an electroplating method for the non-circular substrate.
The present application relates to a photoresist stripping method and system for a chip-on-wafer process. The photoresist stripping method for a chip-on-wafer process comprises: wetting a wafer to be subjected to photoresist removal; and controlling the rotating speed of said wafer to be within the range of 30 to 200 RPM, and applying megasonic waves to said wetted wafer for a first preset time, so as to perform photoresist removal. The present application solves the problem in the prior art of the production yield being low as a final result of the next process being affected by splashed liquid, which is generated due to an excessively high rotating speed, being attached to an inner wall of a cavity and dripping onto the surface of a wafer, thereby improving the production yield.
B08B 3/12 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
The present invention provides a substrate handling device, comprising: a handling tank used for accommodating a plurality of substrates and storing a handling solution for immersing the plurality of substrates; and a bubbler which is disposed in the handling tank and located below the plurality of substrates and is used for providing bubbles for the handling solution, wherein the bubbler comprises a bubbling plate facing the plurality of substrates and a bubbling cavity, the bubbling plate being provided with a plurality of open holes, and the bubbling cavity being used for providing gas for the plurality of open holes. In the present invention, the interior of the bubbling cavity is divided into at least two gas channels with independently controlled gas supply flow rates and/or the bubbling plate is divided into at least two open hole regions with independently set open hole densities. In the present invention, the bubbling behavior in different regions of substrates is controlled by adjusting the gas supply flow rate of each gas channel and/or the open hole density of each open hole region, such that the etching rate within the surface of a substrate is uniform, and the plurality of substrates share the same etching rate, thus achieving the aim of improving the uniformity within the surface of the substrate and the uniformity between the substrates.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
44.
Method and apparatus for cleaning substrates using high temperature chemicals and ultrasonic device
A method for cleaning substrates includes rotating a substrate; delivering deionized water on a surface of the substrate for pre wetting the surface of the substrate; delivering chemical solution with high temperature on the surface of the substrate for cleaning the surface of the substrate; changing the rotation speed of the substrate to a low rotation speed, and moving a ultra/mega sonic device. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a first cleaning cycle; turning off the ultra/mega sonic device, and delivering a high temperature chemical solution or deionized water. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a second cleaning cycle; turning off the ultra/mega sonic device, and delivering rinse chemical solution or deionized water on the surface of the substrate; and drying the substrate.
B08B 3/04 - Cleaning involving contact with liquid
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
B08B 3/10 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
B08B 3/12 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
B08B 7/04 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
F04B 15/04 - Pumps adapted to handle specific fluids, e.g. by selection of specific materials for pumps or pump parts the fluids being hot or corrosive
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Embodiments of the present invention provide a substrate processing apparatus comprising a chemical liquid processing apparatus. The chemical liquid processing apparatus includes a first chemical liquid processing part, a second chemical liquid processing part configured to be stacked with the first chemical liquid processing part, a heating processing part located opposite the first chemical liquid processing part and the second chemical liquid processing part and a substrate transferring part located between the first and second chemical liquid processing parts and the heating processing part. The substrate transferring part is configured to have at least two first robots, at least one second robot and at least one third robot, all of which are arranged in parallel layers, and at least one pair of first buffer units located between two adjacent first robots and configured for loading and unloading the substrates therein and therefrom via the at least one second robot. The at least two first robots are configured to transfer the substrates between the first chemical liquid processing part and the heating processing part and the at least one third robot is configured to transfer the substrates between the second chemical liquid processing part and the heating processing part.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
Provided in the present application are a vibration attenuation control method and apparatus for an electroplating device, and an electronic device. The method comprises: acquiring a resonance frequency of an electroplating device; and selecting an operating frequency for blades on the basis of the resonance frequency, wherein the operating frequency is equal to m times the resonance frequency, m is a real number within a numerical range of (0, 0.5), the operating cycle of the blades is less than an electroplating process time, and the operating frequency is a frequency at which the blades perform stepwise reciprocating stepping vibration in an electroplating cavity of the electroplating device. In the vibration attenuation control method and apparatus for an electroplating device, and the electronic device of the present application, according to different resonance frequencies of different electroplating devices, an operating frequency of blades in an electroplating cavity of the electroplating device and vibration modes of blades in different electroplating cavities are controlled in a targeted manner, such that the impact brought by vibration of the blades is mitigated to a great extent, the stability of a substrate in an actual process environment is ensured, and the processing quality of the substrate is guaranteed, thereby increasing the yield of the substrate.
A purging process for a chemical vapor deposition furnace tube, and a furnace tube having a purging function. The purging process comprises the following steps: sealing a cavity the inside of which has a layer to be purged, and setting the environmental conditions inside of said cavity; introducing a purge gas from the bottom of the cavity to purge said layer; wherein setting the environmental conditions inside of the cavity comprises: implementing high-to-low gradient control of the temperature inside of the cavity in the bottom-to-top direction. In the purging process, by raising the temperature at the bottom of the furnace tube cavity, the thermal decomposition speed of the purge gas at the bottom of the cavity is increased, causing the purge rate to be more consistent throughout the entire cavity, and thereby increasing overall cavity purging efficiency and shortening cavity purging time. This ameliorates the problem of the top of the cavity being damaged by excessive purging thereof, which results from the extra time required to purge the bottom of the cavity. The cavity thus has a longer service life.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating
B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass
48.
ELECTROPLATING APPARATUS AND ELECTROPLATING METHOD
An electroplating apparatus for electroplating on a front surface of a wafer, the electroplating apparatus includes a plurality of anodes, the plurality of anodes forming electric fields on the front surface of the wafer. An independent electric field is formed in a designated area. The intensity of the independent electric field is independently controlled. A total amount of power received within the designated area is adjusted so as to control a plating thickness at a specified location on the front surface of the wafer.
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
The present application discloses a wafer cleaning method and device for cleaning the surfaces of a polished wafer. The wafer cleaning method comprises: S101, wetting the surfaces of a wafer by means of DIW; S102, spraying SC1 having a first preset temperature to the surfaces of the wafer; S103, continuously spraying the SC1 having the first preset temperature to the surfaces of the wafer, and simultaneously controlling a brush to brush the surfaces of the wafer; S104, spraying DIW having a second preset temperature to the brushed surfaces of the wafer for cleaning for a first preset time; S105, repeating steps S103 and S104 until a first preset number of times is reached; and S106, alternately using DHF and DIO3 to clean the surfaces of the wafer on which step S105 is performed. In this way, a transition step of spraying DIW having the second preset temperature for cleaning is added in multiple consecutive brushings, so that residual substances on the surfaces of a wafer after a single brushing are fully removed, thereby effectively improving the cleaning effect of polished wafers.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Provided in the present invention is a substrate treatment apparatus. A plurality of vertically moving process manipulators are connected in series by means of a horizontally moving transfer manipulator, such that substrates are transmitted to a rear end from a front end of the apparatus, or the substrates are transmitted to the front end from the rear end of the apparatus; the transfer manipulator transmits a plurality of substrates at once, so as to ensure that substrates which are to be processed or have been processed by the plurality of process manipulators can be transferred in a timely manner; the process manipulators move in a vertical direction and are responsible for substrate transmission tasks of a plurality of treatment chambers, such that the process manipulators have shortened movement strokes and uniform loads, which is conducive to shortening a time interval for substrate transmission, improving the efficiency of substrate transmission, shortening idle times of the treatment chambers, and thereby improving the overall production capacity of the apparatus.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
The present invention relates to the field of integrated circuit chip manufacturing, and in particular to a flow rectification device, comprising a cover body, a gas inlet distribution plate, a diffusion plate, a gas inlet pipe, and a gas discharging pipe. The gas inlet distribution plate is provided above the diffusion plate; the gas inlet pipe and the gas discharging pipe are provided on the cover body; a first chamber is formed between the upper surface of the gas inlet distribution plate and the inner wall of the cover body; a second chamber is formed between the lower surface of the diffusion plate and a substrate; a third chamber is formed between the lower surface of the gas inlet distribution plate and the upper surface of the diffusion plate; two ends of the gas inlet pipe are connected to an external gas source and the first chamber, respectively, and one end of the gas discharging pipe is communicated with the third chamber; a plurality of through holes are formed in the diffusion plate; an external gas sequentially flows through the first chamber, the second chamber, the through holes, and the third chamber through the gas inlet pipe, and then is discharged to the outside through the gas discharging pipe; and the depth of each though hole is set according to the rate of flow passing through the through hole, and a through hole where the flow rate is high is deeper than a through hole where the flow rate is low. By means of the design, the gas above the substrate is uniformly distributed.
The invention discloses a drying apparatus and method for drying a substrate using a supercritical fluid. The drying apparatus comprises: an upper cavity, a lower cavity, a substrate tray, a jacking mechanism, a connecting assembly, and a locking mechanism; the lower cavity is disposed below the upper cavity; the substrate tray is disposed in the lower cavity and is used for bearing the substrate; the jacking mechanism is disposed below the lower cavity and is used for driving the lower cavity to move in the vertical direction, causing the lower cavity to be completely in contact with the upper cavity; the connecting assembly is connected to the upper cavity and the lower cavity, and the locking mechanism is used for locking or releasing the connecting assembly when the lower cavity is completely in contact with the upper cavity; when the locking mechanism locks the connecting assembly, after the jacking mechanism has moved away from the lower cavity, the locking mechanism and the connecting assembly automatically come into contact one above the other as a result of the gravitational effect on the cavities, and the upper cavity and the lower cavity close, forming a sealed chamber. The present invention has the advantage of enhancing the pressure resistance of the sealed chamber.
F26B 5/04 - Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
Disclosed is an apparatus for use in semiconductor production, specifically a heat treatment device. The device comprises a cooling unit (200), a heating unit (300) and a transfer unit (400). The cooling unit (200) comprises a cooling plate (210) for cooling a substrate (w); the heating unit (300) comprises a heating plate (310) for heating the substrate (w); and the transfer unit (400) comprises a transfer arm (410), a lifting module and a linear module, wherein the transfer arm (410) carries the substrate (w) and transfers the substrate (w) between the cooling unit (200) and the heating unit (300), the transfer arm (410) is arranged on the lifting module, the lifting module drives the transfer arm (410) to ascend and descend, and the linear module drives the transfer arm (410) to transfer the substrate (w) between the cooling plate (210) and the heating plate (310). In this way, the internal space of the device is optimized.
A substrate processing apparatus, comprising a processing chamber; a gas supply portion arranged at the upper part of the processing chamber and used for supplying a processing gas into the processing chamber; a plurality of substrate holding portions arranged in the processing chamber, located below the gas supply portion, and used for holding substrates; and an exhaust portion arranged at the lower part of the processing chamber and used for discharging the gas from the processing chamber, wherein the exhaust portion comprises a plurality of exhaust grooves, a plurality of exhaust flow channels, and a shared main exhaust port, and each exhaust groove is provided with one substrate holding portion; each exhaust groove is provided with two exhaust flow channels which are used for enabling the exhaust groove to be communicated with the main exhaust port; the main exhaust port is located at the geometric center of the plurality of substrate holding portions, and the exhaust amounts of the plurality of exhaust flow channels are the same.
The present invention provides a substrate supporting apparatus having a spin chuck and a plurality of locating pins. The spin chuck configured to support and rotate a substrate has a supporting surface. The locating pins are disposed at the periphery of the supporting surface for limiting the substrate horizontal displacement. The supporting surface defines a first annular region. The first annular region is divided into a plurality of pin regions and a plurality of non-pin regions. The pin regions and the non-pin regions are arranged alternatively in a circumferential direction of the first annular region. Each of the pin regions is corresponding to one locating pin. A plurality of Bernoulli holes are set in the first annular region and is configured as an uneven structure in the first annular region so as to supply stronger gas flow in the pin regions than in the non-pin regions.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
56.
WAFER CENTERING ADJUSTMENT APPARATUS AND ADJUSTMENT METHOD
A wafer centering adjustment method, comprising: before a wafer (4) is etched, a wafer centering system (1) confirms whether the circle center of the wafer (4) coincides with the center of a first adsorption platform (3), and if not, the wafer centering system (1) corrects the position of the wafer (4); after the wafer (4) is etched, a wafer edge washing effect detection system (2) confirms whether the circle center of the wafer (4) coincides with the center of the first adsorption platform (3) in the wafer etching process, and acquires second offset data; the wafer edge washing effect detection system (2) feeds back the second offset data to the wafer centering system (1); before a next wafer is etched, the wafer centering system (1) first acquires first offset data and performs correction, and then performs secondary correction on the position of the wafer according to the second offset data acquired after the previous wafer is etched, thereby realizing closed-loop control of a centering adjustment apparatus. In addition, the degree of coincidence between the circle center of the wafer and the center of the first adsorption platform is greatly improved by means of secondary correction, thereby effectively guaranteeing the uniformity of the wafer edge etching width.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
57.
GAS SUPPLY APPARATUS AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME
A gas supply apparatus and a substrate processing apparatus including the same are provided. The gas supply apparatus supplies a plurality groups of process gas to a substrate processing apparatus of which a plurality of wafers are placed in the inside. The gas supply apparatus includes a plurality of process gas supply units configured to supply the plurality groups of process gas; a process gas temporary reservoir including an inner space partitioned into a plurality of gas storage spaces isolated from each other, each of which configured to store one group of process gas supplied from one process gas supply unit and simultaneously supply the one group of process gas to the plurality of wafers.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
58.
SUBSTRATE HEAT TREATMENT APPARATUS AND SEMICONDUCTOR DEVICE
A substrate heat treatment apparatus, comprising a fixing frame; a movable base for loading a heat treatment module; a limited plate-like motion guide rail, the movable base being movably mounted in the fixing frame by means of the limited plate-like motion guide rail; a first positioning pin assembly for positioning and fixing the movable base in the motion direction of the movable base; at least two sets of sliding assemblies distributed on two sides of the movable base in a horizontal direction perpendicular to the motion direction, each set of sliding assembly comprising a guide wheel and a sliding rail which cooperate with each other, and a positioning wheel and a positioning sliding rail being used as the guide wheel and the sliding rail of at least one set of sliding assembly for positioning the movable base in the horizontal direction perpendicular to the motion direction of the movable base. The present invention further provides a semiconductor device, comprising at least one standby substrate heat treatment apparatus.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
59.
LIQUID SUPPLY DEVICE AND SUBSTRATE CLEANING METHOD
The present invention proposes a liquid supply device and a substrate cleaning method. The liquid supply device comprises a nozzle, wherein a liquid inlet of the nozzle may use a tangential liquid intake method to promote gas-liquid separation by means of a centrifugal force; a plate-shaped separation portion or a cylindrical separation portion may be provided above a liquid outlet of the nozzle, which may inhibit air bubbles from being discharged from the liquid outlet; and the interior of the nozzle can use the structure of an upper chamber and a lower chamber, and the upper and lower chambers are configured with exhaust ports to realize secondary exhaust, and the upper and lower chambers can also be configured with liquid inlets, so that a treatment liquid is mixed in two times, and compared to mixing the treatment liquid at one time, the amount of gas generated and the speed of gas generation can be reduced. The liquid supply device further comprises a control portion and a liquid level sensor, wherein the control portion regulates the opening degree of a regulating valve in an exhaust line of the nozzle according to a liquid level detection signal in the nozzle that is obtained from the liquid level sensor, so as to maintain a stable liquid level in the nozzle, thereby facilitating reducing flow fluctuations when the nozzle supplies the liquid to a substrate and improving the uniformity and reliability of liquid treatment.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B05B 9/03 - Spraying apparatus for discharge of liquid or other fluent material without essentially mixing with gas or vapour characterised by means for supplying liquid or other fluent material
60.
ELECTROPLATING APPARATUS AND ELECTROPLATING METHOD
Disclosed in one embodiment of the present invention is an electroplating apparatus and an electroplating method. The electroplating apparatus comprises a plurality of paddles arranged in parallel. The paddles move in a direction parallel to a substrate, and are used to stir electroplating solution. Within one cycle, the paddles perform reciprocating motion at a set stroke, and the turning points of the reciprocating motion are related to the width of the paddles and the narrowest width of a gap between adjacent paddles. According to the present invention, by designing the size and movement mode of the paddles, the accumulated time in which each corresponding point on the substrate is blocked by the paddles is equal, so that the received quantity of electricity is equal, and thus the consistency of an electroplating height is further improved.
A cup-shaped chuck of a substrate holding device includes an inner pressing ring, a middle frame, a sealing element, an outer pressing ring and a contact ring. The inner pressing ring is locked on the inner peripheral surface of the middle frame. The sealing element has an outer end part, a bottom part and an inner end part. The outer end part of the sealing element wraps the outer peripheral surface of at least part of the middle frame. The bottom part of the sealing element wraps the bottom of the middle frame, and is exposed to the outside of the cup-shaped chuck. The inner end part of the sealing element wraps the inner peripheral surface of at least part of the middle frame and is pressed between the inner pressing ring and the middle frame by the inner pressing ring.
The present invention discloses a plating apparatus. The plating apparatus comprises a multiple electrodes. The multiple electrodes include a main electrode and at least two second electrodes. The main electrode and the at least two second electrodes respectively generate an electric field in a corresponding area on the surface of a wafer. The main electrode and the at least two second electrodes respectively have a control interface. By selecting the combination of the control relationship between each second electrode and the main electrode, the wafers with different sizes or different notch shapes are plated, and the control relationship is independent control or joint control. The plating apparatus of the present invention can plate wafers with different sizes or different notch shapes without replacing the whole plating chamber.
The present invention discloses a plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode; step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P11 and continue with a period T11; step 3: when the period T11 ends, adjusting the first plating power supply applied on the first anode to output a power value P12 and continue with a period T12, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P21 and continue with a period T21; and step 4: when the period T21 ends, adjusting the second plating power supply applied on the second anode to output a power value P22 and continue with a period T22; wherein step 2 to step 4 are performed periodically.
A substrate processing apparatus, comprising a process chamber (1000), a substrate tray (400), a megasonic emission device (30) and a cleaning device (10). The substrate tray (400) is arranged inside the process chamber (1000), the substrate tray (400) being used for bearing a substrate (500). The megasonic emission device (30) is used for transmitting megasonic energy to a chemical liquid between the megasonic emission device (30) and the substrate (500). The cleaning device (10) is used for cleaning the megasonic emission device (30). The cleaning device (10) comprises an electrostatic guiding assembly (200), the electrostatic guiding assembly (200) being arranged on the cleaning device (10), and the electrostatic guiding assembly (200) being electrically connected to the megasonic emission device (30) so as to guide the charges away from the megasonic emission device (30), thereby preventing damaging defects on the surface of the substrate (500) caused by discharging of the charges accumulated on the megasonic emission device (30).
B08B 3/12 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention discloses plating apparatuses and plating methods for metal deposition on a substrate with pattern structures. In an embodiment, a plating apparatus comprises a plating bath configured to accommodate electrolyte, a substrate holding module configured to hold a substrate, and at least one driving device configured to drive the substrate holding module together with the substrate to horizontally vibrate and/or vertically vibrate during the substrate being immersed into the electrolyte to be plated. The present invention can enhance mass transfer during the substrate being plated by vibrating the substrate holding module so as to raise plating rate and uniformly plating on the pattern structures.
The present invention provides a method for mitigating the first wafer effect in a high-temperature etching process. Before a high-temperature etching process is performed on a wafer, a process cavity and a wafer stage are first preheated so that an environment in the process cavity and the wafer stage are rapidly heated to a preset process temperature; the wafer is then fed into the process cavity and the etching process is executed, and the temperature in the process cavity and the temperature of the wafer stage are maintained at the preset process temperature, so that the influences on the etching rate of an etchant are basically the same, the etching thicknesses of a same batch of wafers are basically the same, and the first wafer effect and the process error generated in heating stages of conventional high-temperature etching processes are eliminated.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed in the present invention is an electroplating apparatus, comprising: a film frame, the center of which is provided with a through hole; a conveying branch pipe extending from a side wall of the film frame through hole to the edge of the film frame; an electroplating solution buffer structure, comprising a central cap and a flow stabilizing sleeve, the central cap being fixed on the film frame through hole and covering same, a plurality of first holes being formed in the top of the central cap, the flow stabilizing sleeve being fixed below the central cap and inserted into the film frame through hole, and at least one second hole being formed in a side wall of the flow stabilizing sleeve; and a diffusion plate being fixed to the top of the film frame and provided with a plurality of third holes. A cathode electroplating solution flows into a space between the flow stabilizing sleeve and the side wall of the film frame through hole via the conveying branch pipe, then enters the interior of the flow stabilizing sleeve through the second hole formed in the side wall of the flow stabilizing sleeve, and then is supplied to the diffusion plate through the first holes in the central cap and arrives at a substrate through the third holes. The present invention can buffer the flow velocity of a fluid, thus effectively solving the problem of differentiation between the center and the edge of a substrate to be electroplated, and improving the quality of an electroplated product.
C25D 21/14 - Controlled addition of electrolyte components
C25D 5/08 - Electroplating with moving electrolyte, e.g. jet electroplating
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed is a film deposition device, having a substrate supporting assembly and comprising: a central shaft and a supporting seat arranged on the top of the central shaft; a rotary shaft and a supporting ring arranged on the top of the rotary shaft, wherein the supporting ring is arranged around the supporting seat, and the supporting seat and the supporting ring are used for supporting a middle area and an edge area of a substrate, respectively; a first actuator connected to the rotary shaft for driving the supporting ring to rotate; a second actuator for driving the supporting ring and the supporting seat to move relatively in a vertical direction; and a buffer portion for performing buffering when the substrate comes into contact with the supporting ring. The buffer portion can generate a buffer force at the moment when the substrate comes into contact with the supporting ring, so as to absorb an impact force formed between part of the supporting ring and the substrate when the part of the supporting ring comes into contact with the substrate, so that the problems of warping and fragmenting of the substrate caused by the impact force and the poor contact between the substrate and the supporting seat are avoided, the contact between the substrate and the supporting ring is more stable and more reliable, and the substrate and the substrate supporting assembly are tightly attached when coming into contact with each other.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
69.
SUBSTRATE CLEANING APPARATUS AND TURN-OVER DEVICE THEREOF
The present invention provides a substrate cleaning apparatus and a turn-over device thereof. The substrate turn-over device comprises a tank, a lifting mechanism and a turn-over mechanism. The lifting mechanism is arranged on one side of the tank and is configured to receive a substrate and drive the substrate to ascend and descend. The turn-over mechanism is arranged on the tank, is used for turning over the substrate, and is configured to move between a substrate-receiving position and a substrate-taking position relative to the lifting mechanism, wherein the substrate-receiving position is a position where the turn-over mechanism receives the substrate from the lifting mechanism, and the substrate-taking position is a position where the substrate is taken from the turn-over mechanism. In the present invention, a plurality of substrates that have been subjected to tank cleaning can be transferred to the lifting mechanism in one step, and are quickly transferred to a process manipulator in multiple steps by the turn-over mechanism, which can not only shorten the time that the substrates that have been subjected to tank cleaning stay in the substrate cleaning tank, and thus improve the efficiency of the substrate cleaning apparatus, but can also increase the conveying speed of the substrate turn-over device.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.
B08B 3/12 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
B08B 1/00 - Cleaning by methods involving the use of tools, brushes, or analogous members
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B06B 3/02 - Processes or apparatus specially adapted for transmitting mechanical vibrations of infrasonic, sonic or ultrasonic frequency involving a change of amplitude
B06B 1/02 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
G08B 25/08 - Alarm systems in which the location of the alarm condition is signalled to a central station, e.g. fire or police telegraphic systems characterised by the transmission medium using communication transmission lines
B06B 1/06 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
B06B 3/00 - Processes or apparatus specially adapted for transmitting mechanical vibrations of infrasonic, sonic or ultrasonic frequency
Disclosed in the present invention is a furnace tube for thin film deposition. The furnace tube comprises: a process tube; a wafer boat, which is arranged inside the process tube and is provided with a plurality of layers of supporting members in a lengthwise direction of the process tube; and a gas supply tube which is arranged inside the process tube, a plurality of layers of gas supply holes being formed in the gas supply tube in the lengthwise direction of the process tube, and a plurality of layers of exhaust holes being formed in side walls of the process tube in the lengthwise direction of the process tube, wherein the distribution area of the gas supply holes is gradually reduced from top to bottom in the lengthwise direction of the side wall of the process tube, and the distribution area of the exhaust holes is gradually reduced from top to bottom in the lengthwise direction of the side wall of the process tube. According to the present invention, by arranging the multiple layers of gas supply holes and the multiple layers of exhaust holes, the distribution area of the gas supply holes is gradually reduced from top to bottom in the lengthwise direction of the side wall of the process tube, and the distribution area of the exhaust holes is gradually reduced from top to bottom in the lengthwise direction of the side wall of the process tube, so that the gas supply amount of each layer of gas supply holes is the same, and the gas exhaust amount of each layer of exhaust holes is the same, thereby keeping the uniformity of the deposited thin film on each layer of substrate consistent.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Embodiments of the present invention provide a method for removing a barrier layer of a metal interconnection on a wafer, which remove a single-layer metal ruthenium barrier layer. A method comprises: oxidizing step, is to oxidize the single-layer metal ruthenium barrier layer into a ruthenium oxide layer by electrochemical anodic oxidation process; oxide layer etching step, is to etch the ruthenium oxide layer with etching liquid to remove the ruthenium oxide layer. The present invention also provides a method for removing a barrier layer of a metal interconnection on a wafer, using in a structure of a process node of 10 nm and below, wherein the structure comprises a substrate, a dielectric layer, a barrier layer and a metal layer, the dielectric layer is deposited on the substrate and recessed areas are formed on the dielectric layer, the barrier layer is deposited on the dielectric layer, the metal layer is deposited on the barrier layer, wherein the metal layer is a copper layer, the barrier layer is a single-layer metal ruthenium layer, and the method comprises: thinning step, is to thin the metal layer; removing step, is to remove the metal layer; oxidizing step, is to oxidize the barrier layer, and the oxidizing step uses an electrochemical anodic oxidation process; oxide layer etching step, is to etch the oxidized barrier layer.
The present invention provides a thin wafer transfer method. For thin wafers having different thicknesses, in different transfer stages, a Bernoulli manipulator uses different gas flow rates, so that the problem of chipping of wafers during transfer is solved. Specifically, in a process of moving a wafer out of a wafer cassette, a Bernoulli manipulator uses a small gas flow rate, so as to reduce the suction force on the wafer and weaken warping deformation of the wafer, thereby reducing the risk of cracking or chipping in the process of moving the wafer out of the wafer cassette; after the wafer is moved out of the wafer cassette and in a process of transferring same to a processing chamber, the Bernoulli manipulator uses a large gas flow rate, so as to increase the suction force on the wafer, thereby ensuring that the wafer can be stably suctioned on the Bernoulli manipulator during transfer, and avoiding wafer slipping.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
74.
LIQUID STORAGE DEVICE AND ELECTROPLATING APPARATUS
Disclosed in the present invention are a liquid storage device and an electroplating apparatus. The liquid storage device comprises a liquid storage tank body; the liquid storage tank body comprises a plurality of working circulation liquid discharge ports for supplying a liquid to a plurality of working chambers, and a heat circulation liquid injection port for introducing a heated solution into the liquid storage tank body; the two opposite sidewalls of the liquid storage tank body are both provided with the working circulation liquid discharge ports; and the heat circulation liquid injection port is formed in a sidewall connecting said two sidewalls, and is close to the middle position of the length of the sidewall. The liquid storage device further comprises a flow guide member; and the flow guide member is provided in the liquid storage tank body, and is communicated with the heat circulation liquid injection port. The solution entering from the heat circulation liquid injection port is introduced into the liquid storage tank body through the flow guide member and flows to each working circulation liquid discharge port. The present invention has the advantage that solutions introduced from a single liquid storage device to different working chambers tend to have an equal temperature and flow speed.
Disclosed in the present invention is an electroplating device, comprising a process chamber, a substrate holding device, a first cover body, a second cover body, a gas supply part, and an air discharge part. An electroplating solution is contained in an inner cavity of the process chamber and the process chamber has an opening; the substrate holding device is used for holding a substrate, and the substrate holding device is moved into or out of the inner cavity through the opening; the first cover body is connected to the substrate holding device so as to close the opening after the substrate holding device is moved into the inner cavity, so that the inner cavity is in a closed state; the second cover body is used for closing the opening after the substrate holding device is moved out of the inner cavity, so that the inner cavity is in the closed state again; the gas supply part introduces an inert gas into the inner cavity, and the air discharge part discharges air in the inner cavity. Therefore, the electroplating device can prevent the electroplating solution from being oxidized, maintain the stability of the electroplating solution, and prolong the service life of the electroplating solution, and can save the cost of the electroplating solution.
The present invention relates to the technical field of semiconductor devices. Provided is a semiconductor processing device. The semiconductor processing device comprises: a visual unit, which is arranged on a shell of the semiconductor processing device and is used for observing the internal conditions of the semiconductor processing device; a clearing unit, which is arranged in the semiconductor processing device and is used for clearing away a target object of the visual unit that is located on the inner side of the device; and a driving unit, which is connected to the clearing unit and is used for driving the clearing unit, so as to clear away the target object of the visual unit that is located on the inner side of the device. In the semiconductor processing device of the present invention, a clearing unit is provided for a visual unit in a matching manner, so as to collaborate with the visual unit in monitoring a semiconductor processing process, thereby facilitating precise control over the technological processing process and ensuring that a processing result of a semiconductor reaches the yield.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed is a wafer backside cleaning method, comprising: using a wafer clamping part to hold a wafer, a gap being formed between the wafer clamping part and the wafer; introducing a protective gas into the gap according to a first flow rate; adjusting the flow rate of the protective gas from the first flow rate to a second flow rate, and rotating the wafer under the drive of the first rotational speed of the wafer clamping part so as to clean the backside of the wafer; adjusting the rotational speed of the wafer clamping part from the first rotational speed to a second rotational speed, so that the wafer is driven by the wafer clamping part to rotate so as to dry the wafer; stopping the rotating wafer, adjusting the flow rate of the protective gas to the first flow rate again from the second flow rate, and then taking out the wafer; and stopping introducing the protective gas after the wafer is taken out. According to the present invention, adjusting the switching logic and flow rate of the protective gas can ensure that the front side of the wafer is not prone to adsorption of external impurities during a wafer backside cleaning process, thereby improving the wafer backside cleaning stability.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
78.
ELECTROPLATING CAVITY SKIP PLATING WARNING METHOD AND SYSTEM
An electroplating cavity skip plating warning method and system. The method comprises the following steps: positioning an electroplated wafer (100) on a detection position (S100); setting a target detection region (S200) of the wafer (100); operating an image sensor (400) to detect the target detection region (S300) of the wafer (100), and determining whether undesired metal deposits exist in the target detection region of the wafer (100) (S400); if a determination result is that undesired deposits exist in the target detection region of the wafer (100), which indicates that a skip plating phenomenon occurs in an electroplating cavity for processing the wafer (100), issuing an alarm instruction; and if the determination result is that no undesired deposit exists in the target detection region of the wafer (100), which indicates that no skip plating phenomenon occurs in the electroplating cavity for processing the wafer (100), issuing no alarm instruction. Manual inspection of electroplating conditions of the wafer (100) can be replaced by automatic skip plating detection of the wafer (100) by using a detection apparatus, so as to discover the problem of skip plating of the wafer (100) in time and issue an alarm, so that a worker can deal with the electroplating cavity.
Disclosed in the present invention is a method for cleaning an electroplating device. When the electroplating device is cleaned, a partition plate is used for replacing an ionic membrane framework to isolate a cathode cavity from an anode cavity, such that the cathode cavity and the anode cavity are independently cleaned. After an electroplating cavity is cleaned, a pumping and draining pipe is used for emptying a cleaning solution remaining in the anode cavity and in a liquid input channel arranged in a side wall of the anode cavity, such that no cleaning solution remains after the electroplating cavity is cleaned, thereby eliminating the effect of the residual cleaning solution on the ionic concentration ratio of an electroplating solution in electroplating solution preparation procedures.
The rotating shaft provided by the present invention comprises a central rotating shaft, first gas distribution rings coaxially sleeved on the outer side of the central rotating shaft, and dynamic sealing rings coaxially fixed on the outer side of the central rotating shaft; the dynamic sealing rings and the first gas distribution rings are arranged alternately; the end surfaces of the dynamic sealing rings opposite to the first gas distribution rings are provided with plurality of inner grooves; the inner grooves are used for accommodating the gas leaked from the first gas distribution rings; when the central rotating shaft rotates, the gas forms high-pressure sealing areas in the inner grooves to prevent gas leakage of the first gas distribution rings. In the present invention, the dynamic sealing rings are provided at positions adjacent to the first gas distribution rings of the rotating shaft, and when the dynamic sealing rings rotate with the central rotating shaft, by means of centrifugal acceleration and narrowing of the shapes of the inner grooves in the dynamic sealing rings, the pressure of the leaked gas in the inner grooves rise to form high-pressure sealing areas so as to prevent continuous leakage of the gas provided by the first gas distribution rings, thereby ensuring that the gas supply volume of the rotating shaft meets process requirements, thus improving the stability of the process. The present invention also provides a wafer holding device using the rotating shaft.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
F16J 15/16 - Sealings between relatively-moving surfaces
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A high-temperature tube furnace, comprising: a process tube (1) with a top cover (101) arranged on the top end thereof, the top cover (101) being provided with a through hole (1011); a gas supply pipe (2) communicating with the through hole (1011) in the top cover (101) of the process tube (1), process gas being introduced into the process tube (1) through the gas supply pipe (2) and the through hole (1011) in the top cover (101) of the process tube (1); a wafer boat (3) which is arranged in the process tube (1) and comprises a supporting frame (301) and flat supporting plates (302), the flat supporting plates (302) being distributed in multiple layers in the length direction of the supporting frame (301) and used for supporting multiple substrates (w), each substrate (w) being placed on a flat supporting plate (302) layer, and each flat supporting plate (302) layer supporting the entire bottom of a substrate (w). The multiple layers of flat supporting plates (302) are provided, and each flat supporting plate (302) layer supports the entire bottom of a substrate (w), thus avoiding defects of lattices in the substrates (w) caused by downward deformation of the substrates (w) during a high temperature process of 1200 °C or above, and improving the yield of chips.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A wafer cleaning device provided by the present invention comprises a rotating shaft, a chuck which is arranged at the top of the rotating shaft and used for retaining a wafer, a fixing shaft which coaxially passes through the rotating shaft, and an upper end cover and a lower end cover which respectively block the top portion and the bottom portion of the fixing shaft. The fixing shaft is hollow. The wall surface of the fixing shaft is provided with exhaust holes arranged in at least one circle. The lower end cover is provided with an air inlet. A protective gas is provided into the fixing shaft through the air inlet. The protective gas forms positive pressure through an annular gap between the fixing shaft and the rotating shaft through the exhaust holes arranged in at least one circle. According to the present invention, the exhaust holes are formed on the wall surface of the fixing shaft to provide positive-pressure protection gas to the gap between the fixing shaft and the rotating shaft and form an air seal, thereby preventing particles, metals and other pollutants generated in the bottom area of the rotating shaft from being diffused to the back surface of the wafer through the annular gap between the fixing shaft and the rotating shaft and improving the cleanliness of the back surface of the washed wafer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
83.
METHOD AND APPARATUS FOR REMOVING PARTICLES OR PHOTORESIST ON SUBSTRATES
Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIO3 solution accommodated in a DIO3 bath; after the one or more substrates are processed in the DIO3 bath, taking the one or more substrates out from the DIO3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIO3 and SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed is a substrate treatment apparatus, comprising a treatment chamber, a liquid supply tank, and a recovery tank. A first pipe connects a first liquid inlet of the liquid supply tank to a liquid outlet, so that a chemical liquid circulates in the interior of the liquid supply tank; a second pipe connects the first pipe to a liquid inlet of the treatment chamber, so as to deliver the chemical liquid in the liquid supply tank to the treatment chamber; a third pipe connects the first pipe to a first liquid inlet of the recovery tank, so as to deliver the chemical liquid in the liquid supply tank to the recovery tank; a fourth pipe connects a liquid outlet of the treatment chamber to a second liquid inlet of the recovery tank, so as to return the chemical liquid after use in the treatment chamber to the recovery tank; and a fifth pipe connects a liquid outlet of the recovery tank to a second liquid inlet of the liquid supply tank, so as to deliver the chemical liquid in the recovery tank to the liquid supply tank, the temperature of the chemical liquid delivered to the recovery tank by means of the third pipe being higher than that of the chemical liquid delivered to the recovery tank by means of the fourth pipe.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to the technical field of semiconductor devices. Provided are a substrate processing apparatus and method. The apparatus comprises a clamping mechanism, a spray head mechanism, a rotation driving mechanism, a heating mechanism, and a control mechanism. The heating mechanism comprises a heating plate arranged below a substrate, wherein the heating plate is provided with at least two cavities in a radial direction, and the cavities are distributed at different radii. During the movement of a liquid spray head in the radial direction of the substrate from the center of the substrate to an edge of the substrate, when the liquid spray head moves to a certain area above the substrate, the control mechanism controls heat energy of a fluid in the cavity located at the corresponding radius of the area, thereby improving the local temperature of the substrate below the liquid spray head. The apparatus can dynamically and accurately control the heating of a substrate area in a partitioned manner, thereby realizing accurate control of the surface tension and the evaporation speed of a liquid on a surface of the substrate in a drying process, and avoiding damage to a fine pattern structure on the surface of the substrate in the drying process.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention provides a substrate processing apparatus and method, relating to the technical field of semiconductor devices, and comprising: a clamping mechanism, a spray head mechanism, a rotary driving mechanism, a heating mechanism, and a control mechanism. The heating mechanism comprises a heating plate disposed below a substrate, at least two cavities being formed along radial directions of the heating plate, and each cavity being distributed on a different radius. In a process in which a liquid spray head moves from the center of the substrate to the edge of the substrate along a radial direction of the substrate, when the liquid spray head moves to a certain region above the substrate, the control mechanism controls heat energy of fluid in a cavity located on a radius corresponding to the region, thereby increasing the local temperature of the substrate below the liquid spray head. The present apparatus can dynamically and accurately control heating of a substrate region in a partitioned manner, thereby realizing accurate control of surface tension and evaporation speed of liquid on a surface of the substrate in a drying process, and avoiding damage to a fine pattern structure on the surface of the substrate in the drying process.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed is an electroplating apparatus, comprising a process chamber, a paddle board and a driving mechanism. The driving mechanism is used to drive the paddle board to move back and forth, so that the paddle board stirs an electroplating solution in the process chamber when a substrate is electroplated. The electroplating apparatus further comprises a cleaning assembly and a connecting bracket. The cleaning assembly is used to spray a cleaning solution on the electroplated substrate. One end of the connecting bracket is connected to the paddle board, and the other end of the connecting bracket is connected to the driving mechanism. The driving mechanism drives the paddle board by means of the connecting bracket to move back and forth. The connecting bracket is provided with a hollowed-out region, and the cleaning solution sprayed on the substrate is collected after passing through the hollowed-out region. Therefore, the present invention has the advantage of preventing the dilution of the electroplating solution.
C25D 17/00 - Constructional parts, or assemblies thereof, of cells for electrolytic coating
C25D 21/00 - Processes for servicing or operating cells for electrolytic coating
C25D 5/48 - After-treatment of electroplated surfaces
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed is a substrate treatment method, which comprises the following steps: S1: transporting a substrate plated with a first metal layer from a first electroplating chamber to a second electroplating chamber; S2: once the substrate is transported to the second electroplating chamber, forming a water film layer on a front surface of the substrate; and S3: electroplating a second metal layer on the first metal layer. By means of a step of forming a water film layer before electroplating in an electroplating chamber, the present invention has advantages of preventing layer separation between two metal layers and solving a product recess abnormality.
Disclosed in the present invention is a thin film deposition apparatus, the thin film deposition apparatus comprising: a processing chamber; a gas supply assembly, which is provided on the top wall of the processing chamber; a heating tray, which is provided below the gas supply assembly and configured to bear and heat a substrate; a radio frequency source; and a rotating mechanism, which controls the rotation of the substrate, or the rotation of the heating tray, or the synchronous rotation of the substrate and the heating tray, wherein a rotating rotary shaft is perpendicular to and passes through the substrate. During rotation, the radio frequency source is kept in an on state. The present invention compensates for the non-uniform thickness of a thin film deposited on a substrate, realizes uniformity and stability of deposition of a thin film of a PECVD layer stacked structure, and avoids the phenomenon whereby an etched through hole of the thin film deposited on the substrate deviates from a vertical direction during a subsequent etching process, thereby further ensuring the performance stability of a semiconductor device.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating using electric discharges using radio frequency discharges
90.
THIN FILM DEPOSITION DEVICE, THIN FILM DEPOSITION METHOD, AND THIN FILM DEPOSITION APPARATUS
Disclosed in the present invention is a thin film deposition device, comprising: a treatment chamber; a gas supply assembly, which is arranged on the top wall of the treatment chamber; a heating tray, which is arranged below the gas supply assembly and used for carrying and heating a substrate; a radio-frequency source; and a rotating mechanism that controls the rotation of the substrate, or the rotation of the heating tray, or the synchronous rotation of the substrate and the heating tray, wherein the rotation shaft for rotation is perpendicular to and penetrates the substrate; and during rotation, the radio-frequency source is maintained in an on state. According to the present invention, the uneven thickness of a thin film deposited on the substrate is compensated, so as to realize the uniformity and stability of the thin film deposition of a PECVD layer stack structure to prevent of an etch via from deviating from a vertical direction during a subsequent etching process of the thin film deposited on the substrate, thereby further ensuring the stability of the performance of a semiconductor device.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A coating and developing device, comprising a device front end module (100), a process station (200), and an interface station (300) that are sequentially connected, wherein the process station (200) comprises a coating unit (210), a developing unit (220), at least one mobile transmission portion (230) that transversely moves, and at least one side mechanical hand (R0); after a substrate is treated by the coating unit (210), the substrate is carried into the mobile transmission portion (230) by the at least one side mechanical hand (R0), and is transmitted to the interface station (300) by the mobile transmission portion (230); and after the substrate is treated by the developing unit (220), the substrate is carried into the mobile transmission portion (230) by the at least one side mechanical hand (R0), and is transmitted to the device front end module (100) by the mobile transmission portion (230). The mobile transmission portion (230) and the side mechanical hand (R0) are configured to be responsible for transmitting, between the device front end module (100) and the interface station (300), the substrate that is treated by the coating unit (210) or the developing unit (220), and thus, the operating load of a mechanical hand in the coating unit (210) or the developing unit (220) can be reduced, and the yield rate of the coating and developing device is improved.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
A drying apparatus based on a supercritical fluid, the apparatus comprising: an upper cover (1); a base (2) arranged below the upper cover (1) and suitable for moving relative to the upper cover (1) in a vertical direction, so as to close to form a pressure-resistant closed chamber (120); a substrate tray (3) arranged on the base (2) and used for bearing a substrate (w); a first fluid supply tube (4) arranged on the top wall of the upper cover (1) and used to supply a supercritical fluid to the interior of the closed chamber (120), such that the closed chamber (120) reaches a supercritical state from an atmospheric pressure state; a fluid disturbance plate (5) arranged below the first fluid supply tube (4); a second fluid supply tube (6) arranged on a first side wall of the upper cover (1) and used to supply the supercritical fluid to the interior of the closed chamber (120); and a fluid discharge tube (7) arranged on a second side wall of the upper cover (1). The inner space of the closed chamber (120) can be minimized by using the drying apparatus, thereby reducing the usage amount of the supercritical fluid, and reducing the usage costs.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
B08B 3/04 - Cleaning involving contact with liquid
B08B 3/00 - Cleaning by methods involving the use or presence of liquid or steam
Provided in the present invention is a flipping apparatus, comprising a bracket body, a rotary driver, and a clamping apparatus, a plurality of partition plates being formed on the inner side faces of two side walls of the bracket body, a carrier slot for the placement of a wafer being formed between each two adjacent partition plates, and a rotating shaft being formed on the outer side faces of two side walls of the bracket body; the rotary driver is connected to at least one rotating shaft to drive the bracket body to rotate; and the clamping apparatus is arranged on a side wall of the bracket body and is used for pressing or releasing the wafer placed in the carrier slot. In the present invention, by means of the arrangement of the clamping apparatus on the bracket body holding the wafer, the wafer is fixed by the clamping apparatus when the bracket body rotates, effectively avoiding fragments or surface scratches caused by the wafer shaking in the bracket body when the wafer changes posture with the bracket body.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
94.
ELECTROPLATING DEVICE AND ELECTROPLATING METHOD FOR NON-CIRCULAR SUBSTRATE
Disclosed is an electroplating device for a non-circular substrate, comprising a central electrode region, a peripheral electrode region, a power supply device, and a control device. The size of the central electrode region is an inscribed circle of the non-circular substrate, and a central electrode is disposed in the central electrode region. The peripheral electrode region surrounds the central electrode region, the peripheral size of the peripheral electrode region is a circumscribed circle of the non-circular substrate, closely arranged point electrodes are disposed in the peripheral electrode region, and the point electrodes fill the peripheral electrode region. The power supply device supplies power for the central electrode and the point electrodes. The control device is connected between the power supply device and the central electrode as well as the point electrodes to control the on and off of the central electrode and the point electrodes, and the control device tracks the rotation position of the substrate, so that in the central electrode region and the peripheral electrode region, the electrodes in the region covered by the substrate are turned on and the electrodes in the region not covered by the substrate are turned off, and the electrodes are turned on or off as the substrate rotates. Also disclosed is an electroplating method for a non-circular substrate.
122) of the second positioning claw (105) is a straight line L, and the straight line L passes through the standard center (O'); the moving arm (103) can translate along the straight line L under the driving of the first linear module; and the first positioning claw (104) pushes the substrate (W) until the first positioning claw (104) and the second positioning claw (105) are simultaneously brought into contact with the edge of the substrate, and at this time, the center (O) of the substrate is located on the straight line L. The deviation between the center (O) of the substrate and the standard center (O') can be calculated according to the coordinates of the reference arm (101) and the coordinates of the moving arm (103). The substrate (W) may be an oval substrate or a circular substrate having a notch or a flat edge.
G01B 21/04 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
Machines for the electronic industry; battery manufacturing
machinery; machines and apparatus for polishing [electric];
solar battery manufacturing machines; LED displays
manufacturing machines; electromechanical machines for
chemical industry; semiconductor wafer processing equipment,
namely megasonic cleaning machines; semiconductor wafer
cleaning machines; semiconductor wafer processing equipment,
namely wet etching machines; machines for making skim
rubber; semiconductor wafer treatment equipment, namely dry
etching machines; lithography machines for use in the
manufacture of semiconductors; ion implantation machines for
use in the manufacture of semiconductors; film deposition
machines for use in the manufacture of semiconductors; heat
treatment machines for use in the manufacture of
semiconductors; testing machines for use in the manufacture
of semiconductors; LED display screen manufacturing
machines.
Disclosed in an embodiment of the present invention is an electroplating device, comprising an electroplating tank, a clamp, a positioning cylinder and an anode, wherein the positioning cylinder is located in the electroplating tank; the positioning cylinder is open at one end; the anode is located inside the positioning cylinder, and the positioning cylinder comes in contact with the anode in a sealing manner; and in the entire surface region of the anode, only a first surface comes in contact with an electroplating solution, and the first surface is parallel to and opposite a substrate, with the center of the first surface being directly opposite the center of the substrate, and the size of the first surface being similar to that of an effective electroplating region of the substrate. By means of the electroplating device, an electric field generated by the anode is uniformly distributed on the surface of the substrate, thereby improving the uniformity of the electroplating height on the surface of the substrate. Further disclosed in an embodiment of the present invention is an electroplating method using the electroplating device.
Disclosed in an embodiment of the present invention is a substrate heating apparatus, comprising a holding unit, a rotating unit, a heating unit, and a control unit. The heating unit comprises multiple fluid supply pipes and multiple groups of fluid cartridges, a substrate region heated by the fluid cartridges in the same group is a circular ring or circle, and substrate areas heated by the fluid cartridges in different groups are not overlapped with each other and concentric. The control unit can measure and adjust the temperatures of the substrate regions in real time. Because the structure of the heating unit is optimally designed and the control unit is added, the substrate heating apparatus of the present invention can adjust the temperatures of the regions on the substrate in real time, so that the temperatures of the regions on the substrate tend to be consistent, and high substrate heating efficiency and high temperature adjustment response speed are achieved. Further disclosed in another embodiment of the present invention is a substrate drying apparatus.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A method for cleaning a substrate with pattern structures comprises the following steps: using gas-liquid atomization to clean a substrate surface (601); using TEBO megasonic to clean the substrate surface (602); and drying the substrate (603). The TEBO megasonic cleaning is used to remove small size particles on the substrate and the gas-liquid atomization cleaning is used to remove large size particles on the substrate. The method enables achieving an effect of cleaning the substrate without or with less device damage. A substrate cleaning apparatus is also provided.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/02 - Cleaning by the force of jets or sprays
B08B 3/04 - Cleaning involving contact with liquid
B08B 3/12 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Embodiments of the present invention provide a substrate processing apparatus comprising a chemical liquid processing apparatus. The chemical liquid processing apparatus includes a first chemical liquid processing part, a second chemical liquid processing part configured to be stacked with the first chemical liquid processing part, a heating processing part located opposite the first chemical liquid processing part and the second chemical liquid processing part and a substrate transferring part located between the first and second chemical liquid processing parts and the heating processing part. The substrate transferring part is configured to have at least two first robots, at least one second robot and at least one third robot, all of which are arranged in parallel layers, and at least one pair of first buffer units located between two adjacent first robots and configured for loading and unloading the substrates therein and therefrom via the at least one second robot. The at least two first robots are configured to transfer the substrates between the first chemical liquid processing part and the heating processing part and the at least one third robot is configured to transfer the substrates between the second chemical liquid processing part and the heating processing part.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
