Disclosed herein are quantum dots, films and wafers containing quantum dots, methods of making the quantum dots and methods of using quantum dots. Particularly, nanoporous anodic aluminum oxide membranes containing quantum dots, methods of making and using them are disclosed. A Nanoporous Anodic Aluminum Oxide membrane coated with quantum dots, wherein the quantum dots are substantially evenly dispersed in transparent silica or a polymer, and methods of making and using such membranes are disclosed.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
2.
CADMIUM-FREE QUANTUM DOTS, TUNABLE QUANTUM DOTS, QUANTUM DOT CONTAINING POLYMER, ARTICLES, FILMS, AND 3D STRUCTURE CONTAINING THEM AND METHODS OF MAKING AND USING THEM
Quantum dots that are cadmium-free and/or stoichiometncally tuned are disclosed, as are methods of making them. Inclusion of the quantum dots and others in a stabilizing polymer matrix is also disclosed. The polymers are chosen for their strong binding affinity to the outer layers of the quantum dots such that the bond dissociation energy between the polymer material and the quantum dot is greater than the energy required to reach the melt temperature of the cross-linked polymer.
C09K 11/00 - Luminescent, e.g. electroluminescent, chemiluminescent, materials
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Disclosed herein are methods and compositions of nanoparticles having one or more layers of organic coating. In some embodiments, a nanoparticle comprises a core/shell nanocrystal comprising a first coating layer comprising a plurality of organic molecules, and a second organic coating layer surrounding the first organic coating layer, wherein the second coating layer comprises a plurality of organic molecules. Further, the organic molecules of the second coating layer are intercalated between the organic molecules of the first coating layer.
Metal printed circuit boards, particularly aluminum based printed circuit boards are provided. Methods of making the metal printed circuit boards are also provided. Lighting systems, such as LED lighting systems, employing the disclosed metal printed circuit boards are also provided. Some embodiments include a method comprising screen printing on a mask; anodizing the aluminum with a rather thick layer (70um to 80um) of anodization to form a dielectric layer; patterning the anodized layer exposing the areas where traces and pads will later be located; zincating in preparation for electroless nickel (EN) deposition. The zincation step requires that the nitric acid etch is either eliminated or made less aggressive so that it does not remove significant amounts of the anodized dielectric layer. The zincate treatment itself removes some anodization (about 40um), which was the motivation for the excessively thick initial anodized layer; and EN plate deposition to desired thickness.
Light modules for converting the wavelength of light are described herein along with methods for using and making such modules and devices incorporating such modules.
Fluorescent semiconductor nanocrystals and quantum dots having an inorganic coating on the outermost surface of the nanocrystal are described herein as well as methods for preparing and using such nanocrystals and quantum dots. Devices in which such nanocrystals and quantum dots are used are also described.
H10D 62/862 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe
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