Abstract

An optical coupler for a photonic integrated circuit, comprising: a grating between a first surface and a second surface; and a first region of a semiconductor layer. A component of the photonic integrated circuit different from the optical coupler comprises a second region of the semiconductor layer. The grating and a distance between the grating and the first surface are each configured such that light diffracted by the grating is reflected at the first surface towards the second surface, to interfere constructively with light diffracted by the grating towards the second surface.

IPC Classes  ?

• G02B 6/124 - Geodesic lenses or integrated gratings
• G02B 6/13 - Integrated optical circuits characterised by the manufacturing method

Abstract

An interferometer for a photonic integrated circuit, the interferometer comprising: a first waveguide, a second waveguide, and a layer on at least one of the first waveguide or the second waveguide. The first waveguide having a first effective refractive index and a first path length along an optical propagation axis of the first waveguide. The second waveguide having a second effective refractive index and a second path length along an optical propagation axis of the second waveguide. The interferometer is configured to reduce change in a difference between: the first path length multiplied by the first effective refractive index; and the second path length multiplied by the second effective refractive index. The change in the difference is caused by at least one of an expansion force or a contraction force from the layer.

IPC Classes  ?

• G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
• G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure

Abstract

A structure comprising a substrate, a waveguide, a layer, and a heating element. The waveguide has a first thermal conductivity, and a light propagation axis. The layer has a second thermal conductivity lower than the first thermal conductivity. The heating element is operable to heat the waveguide and modify a refractive index of the waveguide. A portion of the heating element, in a cross-sectional plane perpendicular to the light propagation axis, is located between the waveguide and the substrate, and is separated from the substrate by the layer.

IPC Classes  ?

• G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour

Abstract

A light polarisation converter for a photonic integrated circuit, comprising a first layer. The first layer comprises a first surface and a second surface. The second surface is offset from the first surface along a first axis and a second axis. The first axis is perpendicular to the first surface. The second axis is parallel to the first surface. The light polarisation converter comprises a second layer and a waveguide. The waveguide is between, and in contact with, the first layer and the second layer. The waveguide comprises a first waveguide portion in contact with the first surface, and a second waveguide portion in contact with the second surface. The second waveguide portion is offset from the first waveguide portion. The first waveguide portion has a first thickness different to a second thickness of the first waveguide portion. The first thickness and the second thickness are perpendicular the first surface.

IPC Classes  ?

• G02B 6/126 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching

Abstract

A linear tunable laser comprising: a first tunable resonator, a second tunable resonator, an interferometer, an optical amplifier, and a power splitter. The first tunable resonator comprises a waveguide. The interferometer comprises a plurality of waveguides. At least one of the waveguides of the interferometer is optically connected to the first tunable resonator. The optical amplifier is optically connected to the interferometer. The second tunable resonator comprises a waveguide optically that is connected to the optical amplifier. The power splitter is for outputting light from the linear tunable laser.

IPC Classes  ?

• H01S 3/107 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
• H01S 3/063 - Waveguide lasers, e.g. laser amplifiers

Abstract

A polarisation converter for a photonic integrated circuit. The polarisation converter comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer comprises, when viewed in a cross-sectional plane perpendicular a light propagation axis, a first portion thicker than a second portion. The second semiconductor layer is between, and in contact with, the first semiconductor layer and the third semiconductor layer.

IPC Classes  ?

• G02B 6/126 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching

Abstract

An electro-optical modulator for a photonic integrated circuit. The electro-optical modulator comprising: a substrate; a first waveguide on a first portion of the substrate; a first electrode; a second waveguide on a second portion of the substrate; and a second electrode. A first electrical impedance value between the first electrode and the second electrode is different from a second electrical impedance value between the first electrode and the second electrode. The first electrical impedance value along a first axis perpendicular a light propagation axis of the first waveguide. The second electrical impedance value along a second axis perpendicular the light propagation axis of the first waveguide. The first axis spaced from the second axis along the light propagation axis of the first waveguide.

IPC Classes  ?

• G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure

Abstract

A spot-size converter for a photonic integrated circuit, comprising a substrate, and a waveguide. The waveguide comprises a first waveguide portion and a second waveguide portion. The first waveguide portion is on a first portion of the substrate. The second waveguide portion is on a second portion of the substrate. A size of the first waveguide portion in a first direction perpendicular to a light propagation direction of the waveguide is less than a size of the second waveguide portion in the first direction.

IPC Classes  ?

• G02B 6/122 - Basic optical elements, e.g. light-guiding paths
• G02B 6/132 - Integrated optical circuits characterised by the manufacturing method by deposition of thin films
• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching

Abstract

A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the waveguide layer, and a contact layer for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact. Corresponding methods of operation of such a photonic integrated circuit are also presented herein.

IPC Classes  ?

• G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
• A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
• A61B 6/03 - Computerised tomographs
• A61B 6/50 - specially adapted for specific body parts; specially adapted for specific clinical applications
• A61K 45/06 - Mixtures of active ingredients without chemical characterisation, e.g. antiphlogistics and cardiaca
• A61N 2/00 - Magnetotherapy
• A61N 2/02 - Magnetotherapy using magnetic fields produced by coils, including single turn loops or electromagnets
• G02B 6/122 - Basic optical elements, e.g. light-guiding paths
• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers

Abstract

An electro-optical modulator for a photonic integrated circuit, comprising: a substrate; a first waveguide on a first portion of the substrate; a second waveguide on a second portion of the substrate; a first electrode in contact with the first waveguide, the first waveguide between the first electrode and the first portion of the substrate; and a second electrode in contact with the second waveguide, the second waveguide between the second electrode and the second portion of the substrate.

IPC Classes  ?

• G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
• G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour

Abstract

A semiconductor structure for a photonic integrated circuit, comprising a substrate, and a waveguide. The substrate comprises a planar surface. The waveguide comprises a first waveguide portion and a second waveguide portion. The first waveguide portion tapered for a first spot size conversion of light, and in contact with a first portion of the planar surface. The second waveguide portion in contact with a second portion of the planar surface next to the first portion of the planar surface. A size of the first waveguide portion in a first direction perpendicular to a light propagation direction is less than a size of the second waveguide portion in the first direction for a second spot size conversion of the light.

IPC Classes  ?

• G02B 6/122 - Basic optical elements, e.g. light-guiding paths
• G02B 6/132 - Integrated optical circuits characterised by the manufacturing method by deposition of thin films
• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching

Abstract

A light polarisation converter for a photonic integrated circuit, comprising: a substrate and a waveguide. The substrate comprises a first surface and a second surface. The waveguide comprises a first waveguide portion in contact with the first surface, and a second waveguide portion in contact with the second surface. The second surface is offset from the first surface along a first axis and a second axis. Each axis is perpendicular to a light propagation direction for converting polarisation of the light. The second waveguide portion is offset from the first waveguide portion.

IPC Classes  ?

• G02B 6/126 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching

Abstract

A polarisation control device for a photonic integrated circuit, comprising a first polarisation converter and a second polarisation converter. The first polarisation converter has a first cross-sectional structure and supports a first mode and a second mode having different effective refractive indices to each other and having different orientations of polarisation to each other. The second polarisation converter has a second cross-sectional structure and supports a third mode and a fourth mode having different effective refractive indices to each other and having different orientations of polarisation to each other. A control element modifies the effective refractive indices in response to a signal.

IPC Classes  ?

• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• G02B 6/126 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
• G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour

Abstract

A method comprising: providing an electrically-insulative wafer comprising a first surface, and a second surface for processing; and providing a layer on the first surface. The layer is non-metallic, electrically-conductive, and for electrostatically clamping to an electrostatic chuck.

IPC Classes  ?

• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

Abstract

A tunable laser comprising a first wafer, a second wafer, and an optical cavity. The first wafer is of a first semiconductor material. The first wafer supports an optical amplifier and an electro-optically tunable optical filter. The second wafer is of a second material different from the first semiconductor material. The second wafer supports a thermally tunable optical filter. The optical cavity comprises the optical amplifier, the electro-optically tunable optical filter, and the thermally tunable optical filter.

IPC Classes  ?

• H01S 5/0239 - Combinations of electrical or optical elements
• H01S 5/14 - External cavity lasers
• H01S 3/106 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
• G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
• H01S 3/08022 - Longitudinal modes
• H01S 3/107 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
• H01S 5/06 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium

Abstract

A semiconductor structure for a photonic integrated circuit, comprising: a substrate; a waveguide on the substrate; a passive region comprising a first cladding layer in contact with a first portion of the waveguide; and an active region comprising a second cladding layer different to the first cladding layer, the second cladding layer in contact with a second portion of the waveguide and the first cladding layer. There is a photonic integrated circuit comprising the semiconductor structure. There is a method of manufacturing a semiconductor structure for a photonic integrated circuit.

IPC Classes  ?

• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
• H01S 5/323 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser

Abstract

A waveguide structure comprising: a substrate; a waveguide layer on the substrate; a cladding layer in contact with a first side of the waveguide layer, the waveguide layer between the cladding layer and the substrate; and a first waveguide modifier layer comprising a first material for modifying a waveguide function of the waveguide layer, the first waveguide modifier layer in contact with the cladding layer and having a width along a first axis less than a width, parallel to the first axis, of the cladding layer, the first axis perpendicular to a second axis corresponding with a light propagation direction within the waveguide layer. There is a method of manufacturing a waveguide structure.

IPC Classes  ?

• G02B 6/126 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
• G02B 6/122 - Basic optical elements, e.g. light-guiding paths

Abstract

An optical coupler for a photonic integrated circuit, comprising: a grating between a first surface and a second surface; and a first region of a semiconductor layer. A component of the photonic integrated circuit different from the optical coupler comprises a second region of the semiconductor layer. The grating and a distance between the grating and the first surface are each configured such that light diffracted by the grating is reflected at the first surface towards the second surface, to interfere constructively with light diffracted by the grating towards the second surface.

IPC Classes  ?

• G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
• G02B 6/34 - Optical coupling means utilising prism or grating
• G02B 6/42 - Coupling light guides with opto-electronic elements
• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind

Abstract

A semiconductor structure for a photonic integrated circuit. The semiconductor structure comprises a waveguide and an active component of the photonic integrated circuit. An electrically resistive material is between the waveguide and the active component along a light propagation axis between the waveguide and the active component. The electrically resistive material has an electrical resistivity higher than the waveguide.

IPC Classes  ?

• G02B 6/122 - Basic optical elements, e.g. light-guiding paths
• G02B 6/26 - Optical coupling means
• G02B 6/42 - Coupling light guides with opto-electronic elements

Abstract

An interferometer (100) for a photonic integrated circuit, the interferometer comprising: a first waveguide (104), a second waveguide (108), and a layer (106) on at least one of the first waveguide (104) or the second waveguide (108). The first waveguide (104) having a first effective refractive index and a first path length along an optical propagation axis of the first waveguide (104). The second waveguide (108) having a second effective refractive index and a second path length along an optical propagation axis of the second waveguide (108). The interferometer (100) is configured to reduce change in a difference between: the first path length multiplied by the first effective refractive index; and the second path length multiplied by the second effective refractive index. The change in the difference is caused by at least one of an expansion force or a contraction force from the layer (106).

IPC Classes  ?

• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means

Abstract

A polarisation converter for a photonic integrated circuit. The polarisation converter comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer comprises, when viewed in a cross-sectional plane perpendicular a light propagation axis, a first portion thicker than a second portion. The second semiconductor layer is between, and in contact with, the first semiconductor layer and the third semiconductor layer.

IPC Classes  ?

• G02B 6/10 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• G02B 6/122 - Basic optical elements, e.g. light-guiding paths
• G02B 6/126 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
• G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
• G02B 6/27 - Optical coupling means with polarisation selective and adjusting means
• G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
• G02F 1/017 - Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells

Abstract

A linear tunable laser comprising: a first tunable resonator, a second tunable resonator, an interferometer, an optical amplifier, and a power splitter. The first tunable resonator comprises a waveguide. The interferometer comprises a plurality of waveguides. At least one of the waveguides of the interferometer is optically connected to the first tunable resonator. The optical amplifier is optically connected to the interferometer. The second tunable resonator comprises a waveguide optically that is connected to the optical amplifier. The power splitter is for outputting light from the linear tunable laser.

IPC Classes  ?

• H01S 5/14 - External cavity lasers
• H01S 5/50 - Amplifier structures not provided for in groups
• H01S 3/067 - Fibre lasers
• H01S 3/106 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
• H01S 3/107 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
• H01S 5/10 - Construction or shape of the optical resonator
• G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
• G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
• H01S 3/08 - Construction or shape of optical resonators or components thereof
• H01S 3/105 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity
• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind

Abstract

An electro-optical modulator for a photonic integrated circuit. The electro-optical modulator comprising: a substrate; a first waveguide on a first portion of the substrate; a first electrode; a second waveguide on a second portion of the substrate; and a second electrode. A first electrical impedance value between the first electrode and the second electrode is different from a second electrical impedance value between the first electrode and the second electrode. The first electrical impedance value along a first axis perpendicular a light propagation axis of the first waveguide. The second electrical impedance value along a second axis perpendicular the light propagation axis of the first waveguide. The first axis spaced from the second axis along the light propagation axis of the first waveguide.

IPC Classes  ?

• G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
• G02F 1/03 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect
• G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
• G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure

Abstract

An electro-optical modulator for a photonic integrated circuit, comprising: a substrate; a first waveguide on a first portion of the substrate; a second waveguide on a second portion of the substrate; a first electrode in contact with the first waveguide, the first waveguide between the first electrode and the first portion of the substrate; and a second electrode in contact with the second waveguide, the second waveguide between the second electrode and the second portion of the substrate.

IPC Classes  ?

• G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
• F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
• G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
• G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure

Abstract

A semiconductor structure for a photonic integrated circuit, the semiconductor structure comprising a substrate and a waveguide. The substrate comprises a planar surface. The waveguide comprises a first waveguide portion and a second waveguide portion. The first waveguide portion is tapered for a first spot size conversion of light. The first waveguide portion is in contact with a first portion of the planar surface. The second waveguide portion is in contact with a second portion of the planar surface. The second portion of the planar surface is next to the first portion of the planar surface. A size of the first waveguide portion in a first direction perpendicular to a light propagation direction is less than a size of the second waveguide portion in the first direction for a second spot size conversion of the light.

IPC Classes  ?

• G02B 6/30 - Optical coupling means for use between fibre and thin-film device

Abstract

A light polarisation converter for a photonic integrated circuit, comprising a first layer. The first layer comprises a first surface and a second surface. The second surface is offset from the first surface along a first axis and a second axis. The first axis is perpendicular to the first surface. The second axis is parallel to the first surface. The light polarisation converter comprises a second layer and a waveguide. The waveguide is between, and in contact with, the first layer and the second layer. The waveguide comprises a first waveguide portion in contact with the first surface, and a second waveguide portion in contact with the second surface. The second waveguide portion is offset from the first waveguide portion. The first waveguide portion has a first thickness different to a second thickness of the first waveguide portion. The first thickness and the second thickness are perpendicular the first surface.

IPC Classes  ?

• G02B 6/10 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• G02B 6/122 - Basic optical elements, e.g. light-guiding paths
• G02B 6/126 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
• G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
• G02B 6/27 - Optical coupling means with polarisation selective and adjusting means
• G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour

Abstract

A light polarisation converter for a photonic integrated circuit, comprising: a substrate and a waveguide. The substrate comprises a first surface and a second surface. The waveguide comprises a first waveguide portion in contact with the first surface, and a second waveguide portion in contact with the second surface. The second surface is offset from the first surface along a first axis and a second axis. Each axis is perpendicular to a light propagation direction for converting polarisation of the light. The second waveguide portion is offset from the first waveguide portion.

IPC Classes  ?

• G02B 6/10 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• G02B 6/122 - Basic optical elements, e.g. light-guiding paths
• G02B 6/126 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
• G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
• G02B 6/27 - Optical coupling means with polarisation selective and adjusting means
• G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour

Abstract

A photonic integrated circuit, PIC, for use in generating a random number. The PIC comprising: light source on a substrate; a light detector on the substrate configured to, in response to receipt of light from the light source, output an electrical signal for use in generating the random number; and a light guidance system on the substrate configured to direct light from the light source to the light detector.

IPC Classes  ?

• G06F 7/58 - Random or pseudo-random number generators
• G02B 6/42 - Coupling light guides with opto-electronic elements

Abstract

A structure for a photonic integrated circuit, comprising: a substrate; a first portion of n-type semiconductor material on a first surface area of the substrate, a second portion of n-type semiconductor material on a second surface area of the substrate; a waveguide; and an element between the first portion and the second portion. The waveguide is on and in contact with the element. The element is configured to reduce electric current flow from the first portion to the second portion during propagation of light via the waveguide.

IPC Classes  ?

• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections

Abstract

A waveguide structure (IOO) for a photonic integrated circuit, comprising: a substrate; an active region (102) comprising a diode junction, the active region comprising: a light emission portion (102a) to emit light in a first direction and a second direction perpendicular the first direction; and a light absorption portion (102b) to absorb light emitted from the light emission portion (102a) in the second direction; a first contact corresponding to the light emission portion (102a); and a second contact corresponding to the light absorption portion (102b).

IPC Classes  ?

• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
• H01S 5/06 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
• H01S 5/042 - Electrical excitation
• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers

Abstract

A method of manufacturing a semiconductor structure comprising: depositing a first layer in contact with a first surface area of a substrate; depositing a second layer in contact with a second surface area of the substrate, the second surface area substantially co-planar with and outwards of the first surface area; depositing a third layer in contact with the first layer and the second layer; removing a portion of the third layer to expose a portion of the first layer; and removing at least a portion of the first layer to create a cavity between the substrate, the second layer and the third layer.

IPC Classes  ?

• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind

Abstract

A method of fabricating a semiconductor structure with multiple quantum wells, comprising: providing a substrate comprising a binary semiconductor compound having a first lattice constant; depositing: a first layer on the substrate, the first layer of a first semiconductor alloy, and a second layer in contact with the first layer, the second layer of a second semiconductor alloy, to form a first stack of substantially planar semiconductor layers on the substrate; depositing in contact with the first stack a third layer of a binary semiconductor compound having the first lattice constant; depositing at least: a fourth layer on the third layer, the fourth layer comprising a third semiconductor alloy comprising InP, and a fifth layer in contact with the fourth layer, the fifth layer comprising a fourth semiconductor alloy comprising InP, to form a second stack of substantially planar semiconductor layers on the third layer.

IPC Classes  ?

• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser

Abstract

A tuneable ring laser having a ring cavity, wherein the ring cavity comprises at least one ring resonator having a waveguide for guiding waves, a phase modulator having a waveguide for guiding waves, one or more power couplers for coupling the waves in, and out of, the at least one ring resonator, wherein a cross section of the waveguides of the at least one ring resonator and the phase modulator is configured as PIN diodes and act as an electro-refractive modulator such that the tuneable ring laser is tuneable by applying a reverse bias voltage.

IPC Classes  ?

• H01S 5/10 - Construction or shape of the optical resonator
• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
• H01S 5/50 - Amplifier structures not provided for in groups
• H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser

Abstract

A semiconductor structure (100) for a photonic integrated circuit, comprising: a substrate (102); a waveguide (104) on the substrate (102); a passive region comprising a first cladding layer (108) in contact with a first portion (112) of the waveguide layer (105); and an active region (114) comprising a second cladding layer (116) different to the first cladding layer, the second cladding layer (116) in contact with a second portion (120) of the waveguide layer (105) and the first cladding layer (108). There is a photonic integrated circuit comprising the semiconductor structure. There is a method of manufacturing a semiconductor structure for a photonic integrated circuit.

IPC Classes  ?

• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• G02B 6/136 - Integrated optical circuits characterised by the manufacturing method by etching
• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers

Abstract

A waveguide structure (100) comprising: a substrate (102); a waveguide layer (104) on the substrate (102); a cladding layer (106) in contact with a first side of the waveguide layer (104), the waveguide layer (104) between the cladding layer (106) and the substrate (102); and a first waveguide modifier layer (110) comprising a first material for modifying a waveguide function of the waveguide layer (104), the first waveguide modifier layer (110) in contact with the cladding layer (106) and having a width (W1) along a first axis less than a width (W2) of the cladding layer (106) parallel to the first axis (114), the first axis perpendicular to a second axis (202) corresponding with a light propagation direction within the waveguide layer (104). There is a method of manufacturing a waveguide structure (100).

IPC Classes  ?

• G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind

Abstract

A photonic integrated circuit, PIC, comprising a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming a PIN or PN doping structure, the PIC comprising a waveguide arranged for conducting light waves; an optical element connected to the waveguide, wherein the optical element, in operation, is in reverse-bias mode, and wherein the optical element comprises a contact layer arranged for connecting to a voltage source; wherein the waveguide comprises conducting contacts proximal to the optical element, and wherein the PIC further comprises at least one isolation section arranged in between the optical element and the conducting contacts. Corresponding methods of operation of such a PIC are also presented herein.

IPC Classes  ?

• A61N 2/00 - Magnetotherapy
• A61K 45/06 - Mixtures of active ingredients without chemical characterisation, e.g. antiphlogistics and cardiaca
• A61N 2/02 - Magnetotherapy using magnetic fields produced by coils, including single turn loops or electromagnets
• G02B 6/122 - Basic optical elements, e.g. light-guiding paths
• G02F 1/025 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
• A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
• A61B 6/00 - Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment
• A61B 6/03 - Computerised tomographs
• A61B 6/50 - specially adapted for specific body parts; specially adapted for specific clinical applications

Abstract

A method of processing a wafer of a semiconductor material for at least one of: an optoelectronic device, an electronic device or a photonic device. The method comprises: determining a first region of the wafer between a second region of the wafer for a structure for a photonic integrated circuit and a sacrificial third region of the wafer; and modifying the wafer in the first region to restrict transfer of energy from the sacrificial third region to the second region.

IPC Classes  ?

• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A photonic integrated circuit, PIC, for use in generating a random number. The PIC comprising: light source on a substrate; a light detector on the substrate configured to, in response to receipt of light from the light source, output an electrical signal for use in generating the random number; and a light guidance system on the substrate configured to direct light from the light source to the light detector.

IPC Classes  ?

• G06F 7/58 - Random or pseudo-random number generators

Abstract

A structure for a photonic integrated circuit, comprising: a substrate; a first portion of n-type semiconductor material on a first surface area of the substrate, a second portion of n-type semiconductor material on a second surface area of the substrate; a waveguide; and an element between the first portion and the second portion. The waveguide is on and in contact with the element. The element is configured to reduce electric current flow from the first portion to the second portion during propagation of light via the waveguide.

IPC Classes  ?

• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind

Abstract

A waveguide structure (100) for a photonic integrated circuit, comprising: a substrate; an active region (102) comprising a diode junction, the active region comprising: a light emission portion (102a) to emit light in a first direction and a second direction perpendicular the first direction; and a light absorption portion (102b) to absorb light emitted from the light emission portion (102a) in the second direction; a first contact corresponding to the light emission portion (102a); and a second contact corresponding to the light absorption portion (102b).

IPC Classes  ?

• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
• H01S 5/50 - Amplifier structures not provided for in groups

Abstract

Examples relate to a method of fabricating a semiconductor structure with multiple quantum wells. The method comprises: providing a substrate comprising a binary semiconductor compound having a first lattice constant; depositing at least: a first layer on the substrate, the first layer of a first semiconductor alloy comprising InP, and a second layer in contact with the first layer, the second layer of a second semiconductor alloy comprising InP, to form a first stack of substantially planar semiconductor layers on the substrate; depositing in contact with the first stack a third layer of a binary semiconductor compound having the first lattice constant; depositing at least: a fourth layer on the third layer, the fourth layer comprising a third semiconductor alloy comprising InP, and a fifth layer in contact with the fourth layer, the fifth layer comprising a fourth semiconductor alloy comprising InP, to form a second stack of substantially planar semiconductor layers on the third layer.

IPC Classes  ?

• G02F 1/017 - Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
• H01S 5/34 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
• B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
• H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
• H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers

Abstract

Examples relate to a method of manufacturing a semiconductor structure. The method comprises: depositing a first layer in contact with a first surface area of a substrate, the substrate being of a first semiconductor material and the first layer being of a second semiconductor material; depositing a second layer in contact with a second surface area of the substrate, the second surface area substantially co-planar with and outwards of the first surface area, and the second layer being of the first semiconductor material or a third semiconductor material; depositing a third layer in contact with the first layer and the second layer, the third layer being of the first semiconductor material or the third semiconductor material or a fourth semiconductor material; removing a portion of the third layer to expose a portion of the first layer; removing at least a portion of the first layer to create a cavity between the substrate, the second layer and the third layer.

IPC Classes  ?

• G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
• H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
• B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)

Goods & Services

Indium phosphide (processed in products) (terms considered too vague by the International Bureau - rule 13(2)(b) of the Common Regulations). Semiconductor chips; photonic chips; indium phosphide chips and - semiconductors (terms considered too vague by the International Bureau - rule 13(2)(b) of the Common Regulations); III-V semiconductors; data processing equipment and computers; electronic, electro-technical and electromagnetic modules, parts and components thereof, including (photonic) integrated circuits (ICs), chips, diodes, lasers; transistors, (photonic) semiconductors and semiconductor elements; PICs (photonic integrated circuits); integrated circuits (ICs); interfaces; computer software; electronic chips for the manufacture of integrated circuits; chips in products in the telecom market (eg fiber optics and data centers), medical devices, aviation, aerospace and automotive sectors (terms considered too vague by the International Bureau - rule 13(2)(b) of the Common Regulations). Photonic technology (development); product development; research and development of photonic products; technical advice regarding the production of semiconductors and photonic chips (terms considered too vague by the International Bureau - rule 13(2)(b) of the Common Regulations); research and development in the field of semiconductor processing technology; producing integrated photonic chips, indium phosphide chips / - semiconductors and III-V semiconductors (terms considered too vague by the International Bureau - rule 13(2)(b) of the Common Regulations); consultancy, design, research, development, production and consultancy in the field of (photonic) semiconductors (terms considered too vague by the International Bureau - rule 13(2)(b) of the Common Regulations); design of (photonic) integrated circuits (ICs), chips, diodes, lasers, transistors, (photonic) semiconductors and semiconductor devices, PICs (photonic integrated circuits), integrated circuits (ICs); development of software for (photonic) semiconductors; development of applications in the field of FTTH (terms considered too vague by the International Bureau - rule 13(2)(b) of the Common Regulations), data communication, quantum coding, safety sensor reading, gas detection, medical applications; provision of information to designers and architects in the semiconductor industry (terms considered too vague by the International Bureau - rule 13(2)(b) of the Common Regulations); provision of services and consultancy with regard to evaluation, testing, verification, recognition and standardization, production and application of (photonic) semiconductors (terms considered too vague by the International Bureau - rule 13(2)(b) of the Common Regulations); engineering of (integration) processes.

Goods & Services

Semiconductor chips; computer chips, namely, photonic chips; semiconductor chips, namely, indium phosphide chips; semiconductor chips, namely, III-V semiconductors; data processing equipment and computers; semiconductor chips, diodes, laser diodes; transistors, photonic semiconductors, and semiconductor elements, namely, laser diodes, transmitters, receptors, transistors, integrated circuits, semiconductor power elements; integrated circuit modules, namely, photonic integrated circuits; integrated circuit modules; downloadable graphical user interface software; downloadable computer operating software; electronic chips for the manufacture of integrated circuits; encoded electronic chip cards for use in the telecom market, namely, fiber optics and data centers Development of new technology for others in the field of photonic technology; product development; research and development of photonic products; technical advice regarding the production of semiconductors and photonic chips; research and development in the field of semiconductor processing technology; development of integrated photonic chips, indium phosphide chips, semiconductors, and III-V semiconductors; technical consultancy in relation to the design, research, development, and production of photonic semiconductors; design of photonic integrated circuits, chips, diodes, lasers, transistors, photonic semiconductors, semiconductor devices, photonic integrated circuits, and integrated circuits; development of software for photonic semiconductors; development of software applications in the fields of fiber-to-the-home, data communication, quantum coding, safety sensor reading, gas detection, and medical applications; provision of scientific and technological information to designers and architects in the semiconductor industry; consulting services in the fields of evaluation, testing, verification, recognition, standardization, production, and application of photonic semiconductors; and engineering services in the field of integration processes

Abstract

Improved passive optical coupling to photonic integrated circuit (PIC) chips is provided. An interposer unit (108) having one or more flexible optical waveguide members (112, 114, 116) is employed. The flexible optical waveguide members are coupled to the PIC chip (118) via their tips. The PIC chip includes alignment features to facilitate lateral, vertical and longitudinal passive alignment of the flexible optical waveguide members to on-chip optical waveguides of the PIC.

IPC Classes  ?

• G02B 6/30 - Optical coupling means for use between fibre and thin-film device
• G02B 6/14 - Mode converters
• G02B 6/26 - Optical coupling means
• G02B 6/36 - Mechanical coupling means
• G02B 6/42 - Coupling light guides with opto-electronic elements

Abstract

π/2.

IPC Classes  ?

• G02B 6/28 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
• H01S 5/10 - Construction or shape of the optical resonator
• H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups

Abstract

An optical polarization converter device includes a first polarization converter section [1100] and a second polarization converter section [1102], which have mirror image cross-sections of each other and which are made of a common material and have orientation (i.e., tilt) errors equal in magnitude and opposite in sign. Preferably, one section has half, the other one and a half times the length of an original (single section, non-tolerant) polarization converter, i.e., the lengths of the two sections have a ratio of 1:3. Other embodiments include length ratios of 3:5 and 5:7. In addition to correcting fabrication errors, the polarization converter also corrects errors due to temperature and wavelength, improving the tolerance with respect to operational conditions.

IPC Classes  ?

• G02B 6/00 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
• G02B 6/27 - Optical coupling means with polarisation selective and adjusting means
• G02B 6/126 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects