There is provided a copper-ceramic bonded substrate, including: a ceramic substrate; and a copper sheet bonded to at least one surface of the ceramic substrate, wherein the copper sheet has a Vickers hardness of 42.5 HV or less, and the copper sheet has a magnesium content of 1 ppm or less, a nickel content of 2.5 ppm or less, a tin content of 0.05 ppm or less, a selenium content of 0.3 ppm or less, a tellurium content of 0.07 ppm or less, and a bismuth content of 0.2 ppm or less.
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
2.
COMPOSITE MATERIAL, METHOD FOR PRODUCING THE COMPOSITE MATERIAL, AND TERMINAL
There is provided a composite material, that is a composite material in which a composite coating composed of a silver layer containing carbon particles is provided on a base material, wherein a crystallite size of silver of the composite coating is 30 nm or less; a value obtained by dividing an arithmetic average roughness Ra (μm) of the composite coating by a thickness (μm) of the composite coating is less than 0.2; and a proportion of carbon particles on a surface of the composite coating is 5% by area or more and 80% by area or less.
There is provided a cuboid silver powder including silver particles having a BET specific surface area of 0.5 m2/g or less. An average aspect ratio of the cuboid silver powder is 1.2 or greater and less than 2.0 as determined by observing cross-sections of 100 or more silver particles from the silver particles. An average of a ratio represented by (Formula 1) below is 0.84 or greater. The ratio is a ratio of perimeter of one silver particle among the silver particles to perimeter of a rectangle circumscribing the one silver particle.
There is provided a cuboid silver powder including silver particles having a BET specific surface area of 0.5 m2/g or less. An average aspect ratio of the cuboid silver powder is 1.2 or greater and less than 2.0 as determined by observing cross-sections of 100 or more silver particles from the silver particles. An average of a ratio represented by (Formula 1) below is 0.84 or greater. The ratio is a ratio of perimeter of one silver particle among the silver particles to perimeter of a rectangle circumscribing the one silver particle.
L/(2×major axis+2×minor axis) (Formula 1):
There is provided a cuboid silver powder including silver particles having a BET specific surface area of 0.5 m2/g or less. An average aspect ratio of the cuboid silver powder is 1.2 or greater and less than 2.0 as determined by observing cross-sections of 100 or more silver particles from the silver particles. An average of a ratio represented by (Formula 1) below is 0.84 or greater. The ratio is a ratio of perimeter of one silver particle among the silver particles to perimeter of a rectangle circumscribing the one silver particle.
L/(2×major axis+2×minor axis) (Formula 1):
where L is the perimeter (μm) of the one silver particle, and the major axis and minor axis are respectively a long side (μm) and short side (μm) of the rectangle of minimum area circumscribing an outline of cross-section of the one silver particle.
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
A deep ultraviolet light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type electron blocking layer, and a p-type contact layer, in order, on a substrate. The p-type contact layer has a superlattice structure in which a first layer formed of AlxGa1-xN and a second layer formed of AlyGa1-yN are stacked alternately. The Al composition ratio y of the second layer is 0.15 or higher. The deep ultraviolet light-emitting element includes a reflective electrode consisting of Ni and Rh directly on an outermost second layer. A guide layer having an Al composition ratio larger than those of a barrier layer of the light-emitting layer and the p-type electron blocking layer is included between the p-type electron blocking layer and a well layer closest to the p-type electron blocking layer in the light-emitting layer. A volume ratio of Rh in the reflective electrode is 75% or higher.
There is provided a copper-ceramic bonded substrate, including: a ceramic substrate; and a copper sheet bonded to at least one surface of the ceramic substrate, wherein a dislocation density of the copper sheet is 1.5×1013 m−2 or less.
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
B32B 9/04 - Layered products essentially comprising a particular substance not covered by groups comprising such substance as the main or only constituent of a layer, next to another layer of a specific substance
A perovskite-type composite oxide powder according to the present invention includes: La; and at least one type of element selected from the group consisting of Sr, Ca, Co, Ni, Mn and Fe, a BET specific surface area is less than 6.0 m2/g and a formula (1) below is satisfied:
A perovskite-type composite oxide powder according to the present invention includes: La; and at least one type of element selected from the group consisting of Sr, Ca, Co, Ni, Mn and Fe, a BET specific surface area is less than 6.0 m2/g and a formula (1) below is satisfied:
1
≤
{
(
D
9
0
B
-
D
1
0
B
)
/
D
5
0
B
}
/
{
(
D
9
0
A
-
D
1
0
A
)
/
D
5
0
A
}
≤
2
.
1
(
1
)
in the formula, D10 is a cumulative 10% particle size by volume, D50 is a cumulative 50% particle size by volume and D90 is a cumulative 90% particle size by volume when a measurement was performed with a particle size distribution measuring device that uses a laser diffraction/scattering method, and a subscript “A” indicates a particle size after ultrasonic dispersion and a subscript “B” indicates a particle size before ultrasonic dispersion.
There is provided a method for processing a solar cell module, including: removing a frame member from a solar cell module to obtain a frame-removed material; crushing the frame-removed material to obtain a crushed material; and electrostatically separating the crushed material, wherein in the electrostatic separation, the crushed material is charged and separated in accordance with density and conductivity.
H10F 19/00 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules
8.
SPHERICAL SILVER POWDER AND METHOD FOR PRODUCING SPHERICAL SILVER POWDER
The purpose of the present invention is to provide a spherical silver powder that can impart an excellent thin line printability to conductive pastes. The present invention is a spherical silver powder in which a surface treatment agent is present; for which, in measurement of the thermal expansion coefficient, the maximum value of the thermal expansion coefficient with reference to the value at 50°C is 0.3% or less; for which the BET specific surface area is at least 0.1 m2/g and not more than 0.8 m29090 is at least 2.0 μm and not more than 4.0 μm.
B22F 1/102 - Metallic powder coated with organic material
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
9.
HEAT TREATMENT METHOD FOR LITHIUM-ION SECONDARY BATTERY
[Problem] To provide, for a heat treatment that is used in a pretreatment for recovering valuable materials from a lithium-ion secondary battery, a low-cost method for preventing thermal runaway due to ignition of the lithium-ion secondary battery without controlling the heating atmosphere. [Solution] A heat treatment method for a lithium-ion secondary battery, whereby a lithium-ion secondary battery is inserted into a plurality of housing means made of metal, and the plurality of housing means housing the lithium-ion secondary battery are heated by a heating means arranged outside the plurality of metal housing means under atmospheric conditions. Water is stored and heated together with the lithium-ion secondary battery in some or all of the plurality of metal housing means, and thereby the rate of temperature increase of the housing means in which the lithium-ion secondary battery is housed is adjusted, and as a result, during the heat treatment, thermal runaway due to ignition of the lithium-ion secondary battery can be prevented.
gpp･gp･g of the pseudo substrate layer with respect to the initial growth substrate is not less than 0.7%; N is a natural number of not less than three; and there are not fewer than three buffer layers having a misfit dislocation on the initial-growth-substrate side of the buffer layer.
H10H 20/815 - Bodies having stress relaxation structures, e.g. buffer layers
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
H10H 20/841 - Reflective coatings, e.g. dielectric Bragg reflectors
11.
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided is a semiconductor light-emitting element that has a high reverse voltage (Vr) while a dry etching scheme is used as a mesa formation scheme for a support substrate-bonded type semiconductor light-emitting element. The semiconductor light-emitting element is provided with, on a support substrate in the following order: a reflection layer; an intermediate electrode layer; a first conductivity type layer; an active layer; and a second conductivity type layer. The semiconductor light-emitting element is characterized in that: the intermediate electrode layer comprises a dielectric section and a conductor section, the outer peripheral section of the intermediate electrode layer constituting the dielectric section; the dielectric section is present on the outside of side surfaces extending from the first conductivity type layer to the second conductivity type layer; the angle between the dielectric section and the side surface of the first conductivity type layer is 70 to 85°; and no notches are present on the side surface of a semiconductor laminate.
This carburizing method uses a carburizing gas, and involves repeatedly supplying and halting the supplying of the carburizing gas. The start of the supplying and the halting of the supplying are each performed at a timing based on the carbon infiltration rate at which carbon enters a treatment target object by the carburizing gas.
The purpose of the present invention is to provide a silver powder and a production method for the silver powder that make it possible to prepare a conductive paste that makes it possible to obtain a wiring pattern that has a comparatively large ratio (aspect ratio) of height to line width. This silver powder includes pores enclosed in silver particles. The value of Sa/BET diameter, which is found by dividing the arithmetic average roughness Sa (nm) of the surface of the silver particles by the BET diameter found by using the values of the specific surface area (m2/g) and the true density as measured by the single-point BET method to calculate 6/(specific surface area×true density), is at least 0.0070. This production method for a silver powder includes a crushing step for crushing an agglomerated silver powder with an airflow-type pulverizer and a classification step for classifying the silver powder that has undergone the crushing step with a pneumatic classifier. The agglomerated silver powder has a water content of 5.0–30.0 wt%. At the crushing step, compressed air that is at a temperature of 80°C–180°C is supplied to the airflow-type pulverizer as supplied air. At the classification step, exhaust air from the airflow-type pulverizer and the silver powder that has undergone the crushing step are supplied to the pneumatic classifier, the exhaust air being at a temperature of at least 30°C and having a volume absolute humidity of at least 20 g/m3.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
14.
SILVER POWDER, METHOD FOR PRODUCING SILVER POWDER, DEVICE FOR PRODUCING SILVER POWDER, AND RESIN-CURABLE CONDUCTIVE PASTE
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
15.
SILVER POWDER AND RESIN-CURABLE ELECTROCONDUCTIVE PASTE
The purpose of the present invention is to provide a silver powder that, when formed into an electroconductive paste, is capable of demonstrating low volume resistivity even if calcinated at a low temperature. The present invention is a silver powder which contains a surface treatment agent, and in which the ratio of the amount of oxygen to the BET surface area is at least 0.11 and the crystal grain size is 30 nm to 38 nm.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
B22F 1/102 - Metallic powder coated with organic material
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00 - Manufacture or treatment of nanostructures
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
16.
METHOD FOR PRODUCING REGENERATED POSITIVE ELECTRODE MATERIAL PRECURSOR AND REGENERATED POSITIVE ELECTRODE MATERIAL, AND METHOD FOR USING REGENERATED POSITIVE ELECTRODE MATERIAL
Provided is a method for producing a regenerated positive electrode material precursor from a lithium-ion secondary cell that is an object to be processed, the method comprising performing a heat treatment step, a crushing step, a classification and sorting step, a magnetic separation step, an acid leaching step, an iron removal step, an ion exchange step, an alkali treatment step, and a washing step on the lithium-ion secondary cell that is the object to be processed.
C22B 3/06 - Extraction of metal compounds from ores or concentrates by wet processes by leaching in inorganic acid solutions
C22B 3/24 - Treatment or purification of solutions, e.g. obtained by leaching by physical processes, e.g. by filtration, by magnetic means by adsorption on solid substances, e.g. by extraction with solid resins
C22B 3/44 - Treatment or purification of solutions, e.g. obtained by leaching by chemical processes
H01M 10/54 - Reclaiming serviceable parts of waste accumulators
Provided is a method of recovering valuable materials that is a method of recovering lithium carbonate from a lithium-ion secondary battery, where the lithium carbonate has a boron content of less than 1 ppm and a calcium content of 100 ppm or less. The method includes a heat treatment step, a crushing and classification step, a slurry formation step, a wet magnetic separation step, an acid leaching step, a neutralization step, a neutralized cake solid-liquid separation step, a calcium carbonate crystallization step, a calcium carbonate solid-liquid separation step, and a calcium adsorption and removal step.
A vacuum carburizing furnace includes: a heating chamber in which a vacuum carburizing treatment is performed on a workpiece to be charged from outside the furnace; and a charging port for the workpiece, the charging port provided at a bottom portion of the heating chamber.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
Inventor
Yamada Tomoya
Michiaki Yoshiyuki
Kumon Shoichi
Sato Kimitaka
Yamaguchi Wataru
Hosokawa Akihide
Takagi Kenta
Abstract
5050 in the volume-based particle size distribution by the laser diffraction scattering method of, for example, 0.5-5.0 μm (inclusive). As the alkaline earth metal element Ae, for example, one or more elements selected from Mg and Ca can be employed. The coating layer can be formed by performing co-sputtering of Al and Ae using, for example, a sputtering film forming device.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 9/08 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
C22C 21/06 - Alloys based on aluminium with magnesium as the next major constituent
C22C 23/02 - Alloys based on magnesium with aluminium as the next major constituent
H01F 1/06 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
21.
SELECTIVE PLATING MASK MEMBER AND SELECTIVE PLATING METHOD
There are provided a selective plating mask member including: a drum-shaped jig having a jig opening arrangement region which is a region having a jig opening portion that communicates an outer side surface with an inner side surface of the drum-shaped jig, that is a strip shaped recess provided along a circumferential direction on the outer side surface; and a mask that embeds the jig opening arrangement region and has a mask opening at a location corresponding to the jig opening, wherein the mask is placed in the jig opening arrangement region, a through hole composed of the jig opening and the mask opening is provided, and an edge of the mask opening is raised toward outside of the drum-shaped jig, and there is provided a related technique thereof.
Provided is a device for collecting carbon nanotubes which comprises: a collection chamber having an opening communicating with a device for yielding carbon nanotubes; and a removal mechanism for removing carbon-nanotube deposits attached to wall surfaces surrounding the opening. The removal mechanism comprises a removal member to be inserted into the deposits and a driving part for moving the removal member between a removal position and a retreat position. The driving part further has a configuration for rotating the removal member on the moving direction of the removal member as a rotation axis.
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
Goods & Services
Battery material, namely silver oxide, silver powder, silver oxide powder, zinc powder, nickel powder, metal powder, ferrite powder,and compositions thereof. Laboratory apparatus and instruments; photographic machines and apparatus; cinematographic machines and apparatus; optical machines and apparatus; measuring or testing machines and instruments; power distribution or control machines and apparatus; rotary converters; phase modifiers; solar batteries; batteries and cells; electric or magnetic meters and testers; electric wires and cables; telecommunication machines and apparatus; personal digital assistants; electronic machines, apparatus and their parts; semi-conductor elements; electronic circuits, not including those recorded with computer programs; magnetic cores; resistance wires; electrodes, other than welding electrodes or medical electrodes; circuit board for power modules.
25.
SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT RECEIVING ELEMENT
The present invention provides: a semiconductor light receiving element which has a high breakdown voltage, while achieving adequate capacitance and dark current values at the same time; and a method for manufacturing a semiconductor light receiving element. A semiconductor light receiving element according to the present invention has an n-type InP substrate, a buffer layer on the n-type InP substrate, an n-type InGaAs light absorption layer on the buffer layer, and an InP window layer on the n-type InGaAs light absorption layer, and a p-type impurity diffusion region that reaches the upper part of the n-type InGaAs light absorption layer is formed in the InP window layer. This semiconductor light receiving element is characterized in that the n-type InGaAs light absorption layer has an average n-type impurity concentration of 2.5 × 1014/cm3to 1.0 × 1015/cm3 inclusive.
H10F 30/20 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
26.
LIGHT-EMITTING ELEMENT AND METHOD OF PRODUCING LIGHT-EMITTING ELEMENT
Provided is a light-emitting element having excellent close adherence between a protective film and a semiconductor layer. The light-emitting element is a flip chip-type light-emitting element including a buffer layer formed on a main surface of a substrate, an n-type AlGaN layer formed on the buffer layer, and a light-emitting layer and a p-type AlGaN layer formed in order on at least part of the n-type AlGaN layer. An exposed surface of the substrate is present at an end section on the main surface of the substrate. In a cross-section of the light-emitting element, the exposed surface is inclined at an acute angle θs of 45° or less relative to a horizontal line of an interface between the substrate and the buffer layer.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
27.
SILVER POWDER, MIXED SILVER POWDER, AND CONDUCTIVE PASTE, AND METHOD FOR MANUFACTURING SILVER POWDER AND MIXED SILVER POWDER
Obtained are a silver powder and a mixed powder that can achieve low-resistance electrode wiring when printing wires, and a conductive paste using these powders. The silver powder includes, as 20% or more and less than 95% of all particles, silver particles whose main region of the silver particle upper surface is the (111) plane or a plane close to the (111) plane. The KAM value of the silver particles is 0.4 or more and 1.0 or less.
B22F 9/18 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
28.
OPTICAL SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME
This invention improves the characteristics of an optical semiconductor element. An optical semiconductor element according to the present invention comprises: a first active layer having a light-reception/emission wavelength of a first wavelength; a tunnel junction layer on the first active layer; and a second active layer on the tunnel junction layer, the second active layer having a light-reception/emission wavelength of a second wavelength. The first active layer and the second active layer include Sb. The tunnel junction layer has a p-type InAs layer and an n-type InAs layer.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
29.
SILVER-PLATED MATERIAL, TERMINAL FOR ELECTRIC CONTACT, AND METHOD FOR PRODUCING SILVER-PLATED MATERIAL
This silver-plated material comprises a silver-plated layer on a base material. The surface of the base material is copper or a copper alloy. The silver-plated layer contains selenium. The Vickers hardness of the silver-plated material in the initial state and the Vickers hardness of the silver-plated material after being heated at 100°C for 168 hours are both 120 HV or more. The glossiness of the silver plated layer is 1.0 or more.
[Problem] To efficiently obtain, from a lithium-ion-containing aqueous solution containing anions, a lithium-ion-containing aqueous solution which has a reduced content of anions other than hydroxide ions. [Solution] This method for treating lithium-ion-containing aqueous solution uses an electrodialyzer equipped with a raw-solution tank separated from adjacent tanks on both sides by a cation-exchange membrane and an anion-exchange membrane respectively, a first adjoining tank which adjoins the raw-solution tank with the cation-exchange membrane interposed therebetween, and a second adjoining tank which adjoins the raw-solution tank with the anion-exchange membrane interposed therebetween, wherein: a lithium-ion-containing aqueous solution which contains lithium ions, cations other than lithium ions, and anions is put in the raw-solution tank; water or an aqueous solution is put in the first adjoining tank and the second adjoining tank; a voltage is applied between a cathode inside the first adjoining tank and an anode inside the second adjoining tank; and, while the pH of the liquid inside the raw-solution tank is kept at 10.5 or higher, lithium ions inside the raw-solution tank are caused to move into the first adjoining tank through the cation-exchange membrane.
C02F 1/469 - Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis
The purpose of the present invention is to provide a copper-containing silver powder capable of reducing line resistance of a conductive film. The present invention pertains to a copper-containing silver powder. In a differential curve of a TMA curve from 100°C to 600°C obtained by thermomechanical analysis in which the temperature of the copper-containing silver powder is raised at a temperature increase rate of 10°C/min, the copper-containing silver powder has an expansion peak and has, on the lower temperature side from the expansion peak, a first shrinkage peak at which the dTMA is -0.10%/min or less.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
The present invention improves the characteristics of an AlN template substrate. An AlN template substrate according to the present invention is characterized in that: the AlN template substrate has an AlN layer formed on a main surface of a sapphire substrate; the main surface of the sapphire substrate has a C-plane inclined at an off angle of 0.02°-0.35°; and a step linear rate is at least 90%, the step linear rate being obtained by dividing the linear distance connecting a first contact point which is between a ridge line of a step in an AFM image of a surface of the AlN layer and an edge of the AFM image, and a second contact point by the length of the ridge line of the step extending from the first contact point to the second contact point.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
33.
SILVER POWDER, METHOD OF PRODUCING SILVER POWDER, AND CONDUCTIVE PASTE
Provided are a silver powder that can reduce line resistance and a method of producing the same. The silver powder has a diameter at a cumulative value of 50% of 3 μm or more and a ratio of particles of 10 μm or larger of 10% or less. The silver powder includes flake-like particles having a major axis of 6 μm or more and irregularly shaped particles having a major axis of less than 6 μm, an average aspect ratio that is a ratio of average major axis relative to average thickness of the flake-like particles is 8 or more, and a shape factor that is a ratio of area of a circle having average maximum length of the irregularly shaped particles as a diameter relative to average particle area of the irregularly shaped particles is 1.7 to 1.9. Ignition loss is 0.1 wt % to 0.4 wt %.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
34.
SILVER-PLATED MATERIAL PRODUCTION METHOD AND SILVER-PLATED MATERIAL
A silver-plated material has excellent abrasion resistance and has such performance that the resistance to peeling of a silver coating layer is maintained high even when the silver-plated material is exposed to a high temperature and high humidity environment. The silver-plated material is obtained by a production method, in which when a silver plating layer is formed on a material by an electroplating method using a cyanide-containing silver plating solution, as the silver plating solution, an aqueous solution, in which a benzothiazole or a derivative thereof, and a selenium-containing substance are dissolved, a selenium concentration is 0.9 to 120 mg/L, and a molar ratio of selenium to the benzothiazole or the derivative thereof is 0.08×10−3 or more, is used. As a substance corresponding to the benzothiazole or the derivative thereof, for example, mercaptobenzothiazole or a derivative thereof can be used.
The purpose of the present invention is to provide a copper-containing silver powder capable of reducing line resistance of an electroconductive film. The present invention is a copper-containing silver powder having a true density of less than 10 g/cm3 and a copper content of 10 to 10,000 ppm.
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
Provided are an ultraviolet light-emitting element that enables high light emission output and a method of producing the same. The light-emitting element (100) includes, in stated order: an n-type semiconductor layer (3) formed of AlxGa1-xN having an Al composition ratio x; a quantum well-type light-emitting layer (4); a p-type electron blocking layer (6) formed of AlyGa1-yN having an Al composition ratio y; a p-type cladding layer (7) formed of AlzGa1-zN having an Al composition ratio z; and a p-type GaN contact layer (8). The p-type electron blocking layer (6) has an Al composition ratio y of 0.35 to 0.45 and a thickness of 11 nm to 70 nm. The total thickness of the p-type electron blocking layer (6) and p-type cladding layer (7) is 73 nm to 100 nm. The thickness of the p-type GaN contact layer (8) is 5 nm to 15 nm.
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
37.
Gd-Co-BASED METALLIC POWDER, METHOD FOR PRODUCING SAME, ELECTROCONDUCTIVE MOLDED BODY, AND THERMOELECTRIC CONVERSION ELEMENT
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
Provided are a method of producing single crystal AlN, single crystal AlN, and a single crystal AlN production apparatus with which single crystal AlN can be cheaply and continuously produced. The method of producing single crystal AlN includes a melt formation step of heating and melting an alloy to form a melt of the alloy and a deposition step of cooling a portion of the melt and providing a temperature gradient in the melt while causing deposition of single crystal AlN. In the deposition step, a nitrogen-containing gas is brought into contact with a high-temperature portion of the melt and a single crystal AlN seed crystal or a substrate for crystal growth is held in a low-temperature portion of the melt so as to continue to take nitrogen into the melt in the high-temperature portion while causing deposition of single crystal AlN.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
39.
COMPOSITE MATERIAL, METHOD FOR PRODUCING THE COMPOSITE MATERIAL, AND TERMINAL
There is provided a composite material having a composite film on a substrate, the composite film including a silver layer that contains carbon particles, wherein a crystallite size of silver of the composite film is 30 to 100 nm and Vickers hardness Hv of the composite film is 75 or more.
Provided are: a solid electrolyte powder which contains 0.7% by mass to 5% by mass of Li, 8% by mass to 60% by mass of Nb, and 1.0% by mass to 30% by mass of P with respect to the solid electrolyte powder, with the content of the non-oxygen remainder, which is the remainder excluding oxygen (O), being 10% by mass or less with respect to the solid electrolyte powder, and which has a crystallite diameter of 100 nm or less; and related art thereof.
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
C01B 25/45 - Phosphates containing plural metal, or metal and ammonium
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/10 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances sulfides
H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulatorsProcesses of manufacture thereof
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
[Problem] To provide a silicon oxide-coated soft magnetic powder having a silicon oxide coating with few defects so as to have an excellent insulation property, and having good dispersibility in an aqueous solution, and capable of obtaining a high filling factor when molding a green compact.
[Problem] To provide a silicon oxide-coated soft magnetic powder having a silicon oxide coating with few defects so as to have an excellent insulation property, and having good dispersibility in an aqueous solution, and capable of obtaining a high filling factor when molding a green compact.
[Means for Solution] A highly insulating silicon oxide-coated soft magnetic powder, in which the ratio of a volume-based cumulative 50% particle diameter D50 (HE) according to a dry laser diffraction particle size distribution analysis to the same particle diameter D50 (MT) according to a wet laser diffraction particle size distribution analysis is 0.7 or more, and a coverage ratio R defined by R=Si×100/(Si+M) (wherein Si and M are molar fractions of Si and elements constituting the soft magnetic powder) is 70% or more is obtained by subjecting a slurry containing a soft magnetic powder containing 20 mass % or more of iron and a hydrolysate of a silicon alkoxide to a dispersion treatment when the surface of the soft magnetic powder is coated with the hydrolysate in a mixed solvent of water and an organic substance.
Provided are a silver powder that when used as a conductive paste, has low tendency to experience disconnection even with reduced line width and has lower volume resistivity than is conventionally the case, a conductive paste containing such a silver powder as a conductive filler, and a method of producing such a silver powder. The silver powder is a collection of silver particles that has an apparent density of not less than 8.2 g/cm3 and not more than 9.2 g/cm3 and a value of not less than 1.1 and not more than 1.4 for a ratio of length of a perimeter in a particle cross-section for the silver particles and length of a line circumscribing a periphery of the particle cross-section.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
Provided is a mixed silver powder capable of reducing the specific resistance of a conductive film. This mixed silver powder comprises first silver particles, second silver particles, and third silver particles that are graded by the long-side length, wherein: the average value of the aspect ratio of the first silver particles is at least 2; the average value of the aspect ratio of the second silver particles is at least 1.5 and less than 2; the average value of the aspect ratio of the third silver particles is less than 1.5; within the mixed silver powder, the proportion by the particle count of the first silver particles is at least 0.5% and no more than 5%, the proportion by the particle count of the second silver particles is at least 10%, and the proportion by the particle count of the third silver particles is at least 15%; the average value of the ratio α, calculated using the formula (1) ratio α = perimeter length of second silver particle / (long-side length of second silver particle × 2 + short-side length of second silver particle × 2), is at least 0.84; and a polyvalent carboxylic acid adheres to the surface of at least one type of silver particles chosen from the group consisting of the first silver particles, the second silver particles, and the third silver particles.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/102 - Metallic powder coated with organic material
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
44.
AQUEOUS SOLUTION CONTAINING LITHIUM AND SILICON, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY
44SiO (lithium orthosilicate) having good Li ion conductivity and a method for producing the aqueous solution, and a method for producing a positive electrode active material for a lithium secondary battery having a coating layer containing lithium orthosilicate using the aqueous solution. [Solution] An aqueous solution containing lithium and silicon that contains 0.1-3.0 mass% of lithium and 0.1-3.0 mass% of silicon and has a molar ratio Li/Si of lithium and silicon of 3.70-5.20 and an absorbance at a wavelength of 660 nm of 0.10 or less.
Provided is a GaAs wafer having suppressed carrier concentration and low dislocation density, as well as a large proportion of the area of a region with zero dislocation density to the GaAs wafer surface. The GaAs wafer has a silicon concentration of 1.0×1017 cm−3 or more and less than 1.1×1018 cm−3; an indium concentration of 3.0×1018 cm−3 or more and less than 3.0×1019 cm−3; a boron concentration of 2.5×1018 cm−3 or more; a carrier concentration of 1.0×1016 cm−3 or more and 4.0×1017 cm−3 or less; and a proportion of the area of a region with zero dislocation density to the wafer surface of 91.0% or more.
C30B 11/04 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
46.
METAL-CERAMIC BONDED SUBSTRATE AND MANUFACTURING METHOD THEREOF
In a metal-ceramic bonded substrate in which a metal circuit board is bonded to one surface of a ceramic substrate through a brazing material layer, an overhang portion of the brazing material layer overhanging outward by 80 μm or more from a lower edge portion of a side surface of the metal circuit board is formed, the side surface of the metal circuit board has an inclination angle θ of 75° or more with respect to a surface of the ceramic substrate, and the side surface of the metal circuit board and the overhang portion of the brazing material layer are covered with an insulating layer. The metal-ceramic bonded substrate has good partial discharge characteristics and excellent heat cycle resistance and heat resistance.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/373 - Cooling facilitated by selection of materials for the device
47.
RECYCLED CATHODE MATERIAL PRECURSOR, RECYCLED CATHODE MATERIAL, METHOD FOR MANUFACTURING THEM, AND RECYCLED LITHIUM ION SECONDARY BATTERY
There is provided a recycled cathode material precursor, including: a metal element α consisting of at least one of nickel, cobalt and manganese; and a metal element β consisting of at least one of iron, copper and aluminum, wherein a content of the metal element β is 0.5 to 20% by mass in the recycled cathode material precursor.
C22C 29/12 - Alloys based on carbides, oxides, borides, nitrides or silicides, e.g. cermets, or other metal compounds, e. g. oxynitrides, sulfides based on oxides
H01M 4/02 - Electrodes composed of, or comprising, active material
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
48.
SILVER POWDER, MIXED SILVER POWDER AND CONDUCTIVE PASTE, AND METHOD FOR PRODUCING SILVER POWDER AND MIXED SILVER POWDER
The present invention provides: a silver powder and a mixed powder, which are each capable of reducing the resistance of an electrode wiring line when the wiring line is printed; and a conductive paste which uses the same. This silver powder contains, with respect to all particles, not less than 20% but less than 95% of silver particles, in each of which the main region of the upper surface of the silver particle is the (111) plane or a plane close to the (111) plane, the silver particles having a KAM value of 0.4 to 1.0 inclusive.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
49.
SILVER POWDER AND METHOD OF PRODUCING SILVER POWDER
Provided are a silver powder that is suitable as a conductive filler for a conductive paste that enables low-temperature firing and a method of producing this silver powder. The method of producing a silver powder includes an azole addition step of adding an azole to a silver ammine complex aqueous solution to obtain a first liquid, a reductant addition step of adding a reductant to the first liquid to obtain a second liquid, and a fatty acid addition step of adding a fatty acid to the second liquid to obtain a third liquid. The fatty acid is an unsaturated fatty acid including two or more double bonds.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/102 - Metallic powder coated with organic material
50.
SM-FE-N-BASED MAGNETIC POWDER AND METHOD FOR MANUFACTURING SAME
An Sm—Fe—N-based magnetic powder includes particles containing Sm, Fe, and N as main components. The powder has a composition wherein a molar ratio of Sm to Fe (Sm/Fe) is 0.09 or more and 0.25 or less, a molar ratio of N to Fe (N/Fe) is 0.06 or more and 0.30 or less, and a Ca content in the powder is 0.002 mass % or less. When a cumulative 10% particle diameter is represented by D10, a cumulative 50% particle diameter is represented by D50, and a cumulative 90% particle diameter is represented by D90 in a volume-based particle size distribution according to a laser diffraction/scattering method, D50 is 2.0 to 11.0 μm, and D10, D50, and D90 satisfy a relationship of the following formula: (D90−D10)/D50<1.10. The Sm—Fe—N-based magnetic powder is advantageous in improving coercive force, containing few impurities, and improving the performance and manufacturability of a bonded magnet.
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
B22F 9/08 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
A perovskite-type composite oxide powder according to the present invention contains La, further contains at least one element selected from the group consisting of Sr, Ca, Co, Ni, Mn, and Fe, has a BET specific surface area less than 6.0 m290B10B50B90A10A50A10509090 respectively represent the volume-based cumulative 10% particle size, cumulative 50% particle size, and cumulative 90% particle size as measured by a particle size distribution measuring device by using a laser diffraction scattering method, and having the suffix "A" indicates a particle size obtained after ultrasonic dispersion and having the suffix "B" indicates particle size before ultrasonic dispersion.
The present invention detects an etch pit with high accuracy. A wafer inspection device (10) is provided with: a data input interface (11) for acquiring parameters used for detecting an etch pit; an image input interface (13) for acquiring a captured image of the surface of a wafer; and a control unit (14) for analyzing the captured image on the basis of the parameters and detecting an etch pit appearing on the surface of the wafer. The captured image is taken by means of an illumination device for supplying light to the wafer and an imaging device for capturing an image of the wafer. The captured image is an image captured such that the long axis of the etch pit is inclined by 30° or more from a line perpendicular to a line connecting the illumination device and the imaging device. The parameters include a luminance threshold value and a range of the inclination angle of the etch pit. The control unit (14) detects, as an etch pit, an isolated point at which the angle with respect to an image reference axis is within the range of the inclination angle.
AQUEOUS SOLUTION CONTAINING NIOBIUM POLYACID IONS, LITHIUM IONS, AND PHOSPHATE IONS, PRODUCTION METHOD THEREFOR, AND METHOD FOR PRODUCING ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY
[Problem] To provide an aqueous solution and a production method therefor, the aqueous solution containing niobium polyacid ions, lithium ions, and phosphate ions, suppressing an increase in the specific surface area of a coated positive electrode active material when the surfaces of positive electrode active material particles of a lithium-ion secondary battery are coated with a coating layer containing niobium, lithium, and phosphorus, which are solid electrolytes, and having excellent storage stability. [Solution] This aqueous solution contains niobium polyacid ions, lithium ions, and phosphate ions, wherein: the ratio P/(Nb+Li+P) of the molar number of the phosphorus to the sum of the molar numbers of the niobium, lithium, and phosphorus contained in the aqueous solution is at least 0.04 and less than 0.5; the molar ratio Li/Nb of the lithium and the niobium is greater than 0.6 and at most 2.0; and 0.01-10 mass% of hydrogen peroxide is preferably further contained.
H01M 4/36 - Selection of substances as active materials, active masses, active liquids
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
[Problem] To provide a Cu-Ti-based copper alloy sheet material having all of good strength, bendability, conductivity, fatigue characteristics and spring bending elastic limit and reduced density (specific gravity). [Solution] A copper alloy sheet material comprising, in % by mass, Ti: 1.00-5.00%, Al: 0.50-3.00%, Ag: 0-0.30%, B: 0-0.30%, Co: 0-1.00%, Cr: 0-1.00%, Fe: 0-1.00%, Mg: 0-1.00%, Mn: 0-2.00%, Nb: 0-1.00%, Ni: 0-1.00%, P: 0-0.50%, S: 0-0.20%, Si: 0-0.50%, Sn: 0-2.00%, V: 0-1.00%, Zn: 0-3.00%, Zr: 0-1.00% and a rare earth element: 0-3.00%, the total of elements excluding the above elements and Cu: 0.50% or less, Ti/Al being 1.50 or more with the balance substantially being Cu, and having an average crystal grain size, a number density of coarse deposit particles, a tensile strength of LD and a spring bending elastic limit of TD within predetermined ranges.
C22C 9/01 - Alloys based on copper with aluminium as the next major constituent
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
55.
COPPER ALLOY SHEET MATERIAL, METHOD FOR PRODUCING SAME, AND CURRENT-CARRYING COMPONENT
[Problem] To provide a Cu-Fe-P-based copper alloy sheet material which exhibits excellent strength and electrical conductivity and also has a higher level of bending workability. [Solution] Provided is a copper alloy sheet material which has a chemical composition containing, in terms of mass%, 0.05-1.10% of Fe, 0.02-0.50% of P, 0-0.50% of Mg, 0-0.80% of Ni, 0-0.80% of Sn, 0-0.80% of Zn, and a total of 0-0.10% of elements other than Fe, P, Mg, Ni, Sn, Zn and Cu, with the remainder comprising Cu. The crystallite size, as determined using the Halder-Wagner method on the basis of integrated widths of peaks in an X-Ray diffraction pattern using Cu-Kα rays on a surface of the sheet, is 30 nm or less. The 0.2% proof stress in a direction perpendicular to the direction of rolling is 450 N/mm2 or more.
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
56.
COPPER/CERAMIC CIRCUIT BOARD AND PRODUCTION METHOD THEREFOR
Provided are: an inexpensive copper/ceramic circuit board capable of responding to dimensional accuracy (lower dimensional variation) higher than before; and a manufacturing method therefor. This copper/ceramic circuit board is manufactured by: preparing a copper plate for a circuit pattern and a copper plate for a heat sink pattern, the copper plates each one surface having an arithmetic average roughness Ra of at most 0.1 μm; bonding the other surfaces of the copper plate for the circuit pattern and of the copper plate for the heat sink pattern to one surface and the other surface of a ceramic substrate via a brazing material; then forming etching resists having a circuit pattern shape and a heat sink pattern shape, respectively, on the one surfaces of the copper plate for the circuit pattern and of the copper plate for the heat sink pattern; and etching portions of the copper plate for the circuit pattern and of the copper plate for the heat sink pattern, whereby a circuit pattern copper plate 114 having the circuit pattern shape and a heat sink pattern copper plate 116 having the heat sink pattern shape are bonded to the ceramic substrate 12 via the brazing material 118.
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
57.
COMPOSITE MATERIAL, COMPOSITE MATERIAL PRODUCTION METHOD, TERMINAL, AND TERMINAL PRODUCTION METHOD
Provided is a composite material in which a composite film that is composed of a silver layer containing metal sulfide particles is formed on a base material, wherein the value X obtained by dividing the arithmetic average roughness Ra of the composite film by the thickness (μm) of the composite film is 0.14 or less.
C25D 7/00 - Electroplating characterised by the article coated
C25D 3/46 - ElectroplatingBaths therefor from solutions of silver
C25D 5/16 - Electroplating with layers of varying thickness
C25D 15/02 - Combined electrolytic and electrophoretic processes
H01R 13/03 - Contact members characterised by the material, e.g. plating or coating materials
H01R 43/16 - Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for manufacturing contact members, e.g. by punching and by bending
58.
ARRANGEMENT STRUCTURE OF SOLID ELECTROLYTE IN ALL-SOLID-STATE CELL, AND BATTERY
36x3+x3+x, where x is 2.0-5.0, and the second solid electrolyte includes sulfide or oxide as a main component. The first solid electrolyte is interposed between the electroconductive material on the high potential side and the second solid electrolyte, and a contact part is provided between the electroconductive material on the high potential side and the first solid electrolyte, and a contact part is provided between the first solid electrolyte and the second solid electrolyte.
C01F 7/54 - Double compounds containing both aluminium and alkali metals or alkaline earth metals
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
59.
GALLIUM-CONTAINING SILVER POWDER, METHOD FOR PRODUCING GALLIUM-CONTAINING SILVER POWDER, AND ELECTROCONDUCTIVE PASTE
Provided are a gallium-containing silver powder, and a production method thereof. The gallium-containing silver powder can supply gallium as a p-type impurity in a suitable form, can exhibit low resistance through low-temperature sintering and can exhibit lower electrical resistance compared to a case in which aluminum is added, through high-temperature sintering. The gallium-containing silver powder according to the present invention has a median diameter D50 of 0.2 μm to 5.0 μm in terms of the volume of gallium-containing silver powder as measured by laser diffraction.
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
60.
GALLIUM POWDER, MIXED POWDER, METHOD FOR PRODUCING GALLIUM POWDER DISPERSION, METHOD FOR PRODUCING GALLIUM POWDER, GALLIUM POWDER DISPERSION, AND CONDUCTIVE PASTE
Gallium powder of a small particle size is obtained, and a mixed powder containing said gallium powder that enables making a conductive paste that yields a low-resistance electrode is provided. The gallium powder according to the present invention has an SEM average diameter of from 0.2 μm to 2 μm and a surfactant selected from fatty acids, azole compounds, alkenylsuccinic acids, aliphatic amines, or salts thereof or anhydrides thereof is adhered to the surface of the powder.
There is provided a silver-plated product having a more excellent wear resistance than that of conventional silver-plated products while maintaining the high hardness thereof, and a method for producing the same. In a method for producing a silver-plated product by forming a surface layer of silver on a base material by electroplating in a silver-plating solution which is an aqueous solution containing silver potassium cyanide, potassium cyanide and a mercaptothiazole, the concentration of the mercaptothiazole in the silver-plating solution is not lower than 5 g/L, and the electroplating is carried out at a liquid temperature of not lower than 30° C. and at a current density of 1 to 15 A/cm2.
There is provided a composite material in which an oxygen-containing silver-based coating layer is formed on a base material. the oxygen-containing silver-based coating layer containing silver and having oxygen present in the vicinity of its surface. and the base material comprising copper or copper alloy.
50 obtained by a laser diffraction particle size distribution analysis of 1.5 μm or less to a slurry of a silver powder. The surface of the silver powder is coated with the surface treatment agent. The surface of the silver powder is further coated with a polyvalent carboxylic acid in a step of producing the silver powder.
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
C09C 3/08 - Treatment with low-molecular-weight organic compounds
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
64.
PEROVSKITE-TYPE COMPOSITE OXIDE POWDER AND AIR ELECTRODE FOR SOLID OXIDE FUEL CELL AND SOLID OXIDE FUEL CELL USING THE SAME
In a perovskite-type composite oxide powder according to the present invention, the geometric standard deviation value of the maximum Feret diameter of the perovskite-type composite oxide powder calculated by performing image analysis on an SEM image acquired with a scanning electron microscope is equal to or greater than 1.01 and less than 1.60, and when it is assumed that the perovskite-type composite oxide powder is spherical, the ratio (B/A) of an area value B directly calculated by the image analysis to an area value A calculated from the maximum Feret diameter is equal to or greater than 0.7 and less than 1.0. In this way, the perovskite-type composite oxide powder is used as the air electrode material of an SOFC, and thus high conductivity as compared with a conventional air electrode material is obtained.
H01M 12/06 - Hybrid cellsManufacture thereof composed of a half-cell of the fuel-cell type and of a half-cell of the primary-cell type with one metallic and one gaseous electrode
09 - Scientific and electric apparatus and instruments
11 - Environmental control apparatus
Goods & Services
(1) Semi-conductors; semiconductor wafers; semiconductor chips; semiconductor power elements; LED (light emitting diode) chips; Sensors
(2) Furnaces; Industrial furnaces; incinerator, furnaces, other than for laboratory use; Heat treatment furnaces; fittings, shaped, for furnaces; heat treatment equipment for treating metal parts, namely, furnaces and gas generators; Gas burner, heating furnace, non-experimental furnace, incinerator, sintering furnace, blunting furnace, hot air furnace, mobile metal heating furnace, electric furnace.
xyzzAs (where 0.49 ≤ x ≤ 0.55, 0.10 ≤ z < 0.35 and x + y + z = 1), and the developed interfacial area ratio (Sdr) of a light extraction surface of the cladding layer having the second conductivity type is 4.0 or more.
This composite material is used to produce a terminal that has a soldering portion and terminal-engaged portion, wherein a metal coating and a composite coating are formed above a base material to provide the composite material, the metal coating includes at least one of silver and tin, the composite coating is formed from a silver layer containing carbon particles, and a portion in which the metal coating is exposed and a portion in which the composite coating is exposed are present.
C25D 7/00 - Electroplating characterised by the article coated
C25D 5/02 - Electroplating of selected surface areas
C25D 5/10 - Electroplating with more than one layer of the same or of different metals
C25D 5/16 - Electroplating with layers of varying thickness
C25D 15/02 - Combined electrolytic and electrophoretic processes
H01H 1/023 - Composite material having a noble metal as the basic material
H01H 1/04 - Co-operating contacts of different material
H01H 1/18 - Contacts characterised by the manner in which co-operating contacts engage by abutting with subsequent sliding
H01R 13/03 - Contact members characterised by the material, e.g. plating or coating materials
H01R 43/16 - Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for manufacturing contact members, e.g. by punching and by bending
A carbon nanotube collection apparatus includes: a collection room having an opening part communicating with a carbon nanotube production apparatus; a winding member arranged inside the collection room and configured to wind a carbon nanotube passed through the opening part from the carbon nanotube production apparatus to form a carbon nanotube wound body; and a separation mechanism configured to move the carbon nanotube wound body from a base end side toward a tip end side of the winding member to separate the carbon nanotube wound body from the winding member.
B65H 67/04 - Arrangements for removing completed take-up packages and replacing by cores, formers, or empty receptacles at winding or depositing stationsTransferring material between adjacent full and empty take-up elements
A method of separating valuable materials. The method includes a heat treatment step of performing a heat treatment on a lithium-ion secondary battery including valuable materials, a crushing step of crushing a heat-treated product obtained in the heat treatment step, and a classification step including a first classification step of classifying a crushed product obtained in the crushing step into a coarse-particle product and an intermediate product at a classification cut-point of 0.6 mm or greater and 2.4 mm or less, and a second classification step of classifying the intermediate product into a medium-particle product and a fine-particle product at a classification cut-point of 40 μm or greater and 300 μm or less.
Provided are a silver powder having powder physical properties enabling reduction of volume resistivity after firing and a method of producing this silver powder. The silver powder has a tap density of 4.8 g/mL or more, a TAP/D50 value (value determined by dividing the tap density (g/mL) by the volume-based median diameter (μm)) of not less than 7 and not more than 15, and a specific surface area of not less than 0.75 m2/g and not more than 1.3 m2/g.
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/105 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
73.
POWDER INCLUDING NIOBIUM COMPLEX AND LITHIUM AND PRODUCTION METHOD THEREOF, AND PRODUCTION METHOD OF LITHIUM SECONDARY BATTERY POSITIVE ELECTRODE ACTIVE MATERIAL HAVING COATED LAYER CONTAINING LITHIUM NIOBATE
A powder contains a niobium complex and lithium, an amount of niobium being 25 mass % or more and 75 mass % or less, a proportion of niobium in metal elements of the powder is 0.775 or more and 0.950 or less in terms of mass ratio. When the powder is dissolved in 8 times its mass of water at 25° C., a niobium content contained in a filtrate thereof is 80 mass % or more of an amount of niobium contained in the powder before dissolution. The powder is obtained by mixing a niobium compound, a lithium compound, an alkali, hydrogen peroxide, and water to obtain an aqueous solution containing a niobium complex and lithium and then drying the solution at a temperature equal to or lower than a decomposition temperature of the niobium complex. The powder is suitable for preparing a lithium niobate precursor solution for coating positive electrode active material particles.
A light-emitting element having high emission output power and light emission efficiency and a method of manufacturing of the same are provided. A light-emitting element according to the present disclosure includes an n-type semiconductor layer; an InAsSbP active layer containing at least In and As on the n-type semiconductor layer; a p-type semiconductor layer that is lattice-matched with the InAsSbP active layer, on the InAsSbP active layer; and a p-type InGaAs window layer that is lattice-mismatched with the p-type semiconductor layer, on the p-type semiconductor layer, wherein the p-type semiconductor layer has a thickness of 20 nm or more and 520 nm or less.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
75.
ALUMINUM-CERAMIC BONDED SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
There is provided an aluminum-ceramic bonded substrate in which an aluminum plate comprising aluminum alloy is directly bonded to one surface of a ceramic substrate and an aluminum base plate comprising aluminum alloy is directly bonded to the other surface of the ceramic substrate, wherein the aluminum alloy is the aluminum alloy containing 0.05% by mass or more and 3.0% by mass or less of at least one element selected from nickel and iron in total amount, containing 0.01% by mass or more and 0.1% by mass or less of at least one element selected from titanium and zirconium in total amount, and containing 0% by mass or more and 0.05% by mass or less of at least one element selected from boron or carbon in total amount, with a balance being aluminum.
H01L 23/373 - Cooling facilitated by selection of materials for the device
B22D 19/02 - Casting in, on, or around, objects which form part of the product for making reinforced articles
B22D 19/04 - Casting in, on, or around, objects which form part of the product for joining parts
B22D 21/00 - Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedureSelection of compositions therefor
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
76.
CARRIER CORE MATERIAL AND ELECTROPHOTOGRAPHIC DEVELOPMENT CARRIER USING SAME AND ELECTROPHOTOGRAPHIC DEVELOPER
A carrier core material includes ferrite particles, contains CaSiO3, and has a true density at least equal to 3.5 g/cm3 and at most equal to 4.5 g/cm3. A particle strength index calculated from formula (1) is preferably at most equal to 1.5% by volume. (1): Particle strength index=V2−V1 (In the formula, V1: cumulative value (% by volume) of particle size 22 μm or less in cumulative particle size distribution of carrier core material before crushing test, and V2: cumulative value (% by volume) of particle size 22 μm or less in cumulative particle size distribution of carrier core material after crushing test) Crushing test conditions: 30 g of carrier core material crushed using a sample mill for 60 seconds at a rotational speed of 14000 rpm.
There is provided a copper alloy sheet material, containing: 0.0005% by mass or more and 0.1% by mass or less of Ni, 0.0005% by mass or more and 0.1% by mass or less of Sn, 100 ppm or less of C, 800 ppm or less of O, 10 ppm or less of H, and 50 ppm or less of Ag, with a balance being Cu and impurities, wherein a total content of Ni and Sn is 0.001% by mass or more and 0.11% by mass or less, and when a content of the impurities is expressed as A to B (ppm) in consideration of a quantitative lower limit of each element (here, A is a total impurity content when a content of elements less than the quantitative lower limit is deemed 0 ppm, and B is a total impurity content when a content of the element less than the quantitative lower limit is deemed the quantitative lower limit of each element), A is 100 or less and B is 250 or less.
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
C22C 9/02 - Alloys based on copper with tin as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
78.
PRODUCTION METHOD FOR SILVER COATING MATERIAL, SILVER COATING MATERIAL, AND ENERGIZING COMPONENT
[Problem] To provide a silver coating material which has favorable peeling resistance of a silver coating layer in a severely bent part and also has favorable durability against fine sliding wear. [Solution] This production method for a silver coating material comprises: a lower silver plating step for forming a lower silver-plated layer on a material using a silver plating solution not containing benzothiazoles and derivatives thereof; an upper silver plating step for forming an upper silver-plated layer on the lower silver-plated layer by means of an electroplating method using a silver plating solution containing at least one substance selected from among benzothiazoles and derivatives thereof; and a heat treatment step for holding the lower silver-plated layer and the upper silver-plated layer in the temperature range of 250-400ºC for 3-60 seconds.
A method of producing a GaAs wafer having excellent OF orientation stability even in a GaAs wafer having an off angle, and a GaAs wafer group are provided. A method of producing a GaAs wafer includes: a grinding step of grinding a peripheral surface of a GaAs ingot including formation of a provisional orientation flat; a slicing step of slicing the GaAs ingot after the grinding step to cut out a material wafer having an off angle; and a cleaving step of applying marking to the material wafer according to an orientation of an orientation flat determined based on the provisional orientation flat and cleaving the material wafer toward a peripheral surface of the material wafer from the marking to form the orientation flat.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
80.
SILVER FLAKE POWDER AND PRODUCTION METHOD THEREOF, AND ELECTRICALLY CONDUCTIVE PASTE
To provide a flaky silver powder having a tapped density of from 0.8 g/mL to 1.9 g/mL, and a cumulative 50th percentile particle diameter (D50) of from 2 μm to 7 μm, where the cumulative 50th percentile particle diameter (D50) is measured by laser diffraction or laser scattering particle size analysis.
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
Provided are a silver powder and a method of producing the same. The method of producing the silver powder includes a first surface smoothing step of causing fine silver particles having internal voids to mechanically collide with one another; a fine powder removal step of dispersing fine silver particles present after the first surface smoothing step using high-pressure airflow while removing fine powder; and a second surface smoothing step of causing fine silver particles present after the fine powder removal step to mechanically collide with one another.
B22F 9/04 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from solid material, e.g. by crushing, grinding or milling
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/145 - Chemical treatment, e.g. passivation or decarburisation
H01B 1/20 - Conductive material dispersed in non-conductive organic material
82.
METHOD FOR RECOVERING VALUABLE MATERIALS FROM LITHIUM ION SECONDARY BATTERIES
The present invention provides a method for recovering valuable materials from lithium ion secondary batteries, the method comprising: a heat treatment step in which a heat treated material is obtained by subjecting lithium ion secondary batteries to a heat treatment; a first classification step in which a coarse grain product 1 and a fine grain product are obtained by classifying a crushed material that is obtained by crushing the heat treated material; a second classification step in which a coarse grain product 2 and a microfine grain product are obtained by classifying a ground material, which is obtained by grinding the fine grain product, at a classification point that is smaller than the classification point of the first classification step; a first magnetic separation step in which a magnetically attracted material 1 and a magnetically non-attracted material 1 are obtained by magnetically separating the microfine grain product obtained in the second classification step; a second magnetic separation step in which a magnetically attracted material 2 and a magnetically non-attracted material 2 are obtained by magnetically separating the magnetically non-attracted material 1 obtained in the first magnetic separation step; and a recovery step in which valuable materials are recovered from the magnetically attracted material 1 and the magnetically attracted material 2.
The present invention provides: an ultraviolet light emitting element which achieves a high light emission output; and a method for producing this ultraviolet light emitting element. This ultraviolet light emitting element is provided with: a transparent substrate which has a main surface that serves as a light extraction surface; an AlN layer which is positioned on the transparent substrate; an n-type semiconductor layer which is positioned on the AlN layer; a quantum well light emitting layer which is positioned on the n-type semiconductor layer; a p-type semiconductor layer which is positioned directly on the quantum well light emitting layer; and a reflective electrode which is positioned directly on the p-type semiconductor layer. The lateral surface of the transparent substrate is roughened; the thickness L (nm) of the p-type semiconductor layer, the luminescence center wavelength λ (nm) by the quantum well light emitting layer, the refractive index n of the p-type semiconductor layer, a natural number k, and the emission angle θ of light heading toward the inside of the p-type semiconductor layer from the quantum well light emitting layer satisfy 2L/cosθ = λ(2k + 1)/2n; and in cases where the main surface and the lateral surface of the transparent substrate are flat, the emission angle θ is within the range where light is not extracted from the transparent substrate to the air.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
[Problem] To directly bond a metal layer in the shape of a thin line to a surface of a ceramic substrate. [Solution] A method for producing a ceramic/metal bonded object which comprises: causing laser beams to strike on a surface of a ceramic substrate while sweeping the laser beams; simultaneously therewith, feeding a solid metallic material toward a region (hereinafter, referred to as "irradiated area") in the ceramic-substrate surface, the region being irradiated with the laser beams, so that the metallic material being supplied is also in the state of being irradiated with the laser beams, thereby melting the metallic material while heating the ceramic-substrate surface located in the irradiated area; and causing the molten metallic material to adhere to the ceramic-substrate surface and then solidifying the metallic material.
C23C 24/10 - Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
This carbon nanotube recovering device is for recovering carbon nanotubes, and comprises: a winding chamber; a recovery chamber; a first gas discharge line for discharging a gas supplied to the recovery chamber; and a second gas discharge line for discharging a gas supplied to the winding chamber. The recovery chamber has: a first opening connected to the winding chamber; and an open/close mechanism that opens and closes the first opening. It is possible to change among discharging of gas from the first gas discharge line, discharging of gas from the second gas discharge line, and discharging of gas from both of the first and second gas discharge lines.
A composite material obtained by forming, on a material, a composite film comprising a silver layer containing carbon particles, wherein the crystallite size of the silver in the composite film is greater than 40nm and no greater than 70nm, and the arithmetic mean roughness RA (μm) of the composite film is no more than 2μm.
An apparatus for recovering carbon nanotubes which is equipped with a recovery chamber for recovering carbon nanotubes, wherein: the recovery chamber has a housing and a storage container provided below the housing; the housing has a first opening which is connected to an apparatus for producing carbon nanotubes, an opening/closing mechanism for opening and closing the first opening, and a second opening which is connected to the storage container; and the storage container is removably attached to the housing.
Provided is a production method for an optical semiconductor element having a good yield rate due to damage to a wafer by grinding being inhibited. Specifically provided is a production method for an optical semiconductor element, the production method having a step for forming a compound semiconductor layer laminate on one main surface of a compound semiconductor substrate having cleavability and a grinding step for grinding the other main surface of the substrate, wherein the skewness (Ssk) of the ground surface of the substrate in a surface roughness measurement is set to be positive immediately after the grinding step.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
90.
III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING III-V COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided is a III-V compound semiconductor light-emitting element that has better light emission output with respect to injected power, as compared to conventional light-emitting elements. A III-V compound semiconductor light-emitting element according to the present invention has an n-type cladding layer, a light-emitting layer, and a p-type cladding layer in this order and has an undoped electron blocking layer between the light-emitting layer and the p-type cladding layer. The light-emitting layer has a laminated structure formed by repeatedly stacking barrier layers and well layers. In a conduction band, a band gap of the electron blocking layer is larger than a band gap of the barrier layer and a band gap of the p-type cladding layer, and a band gap of the p-type cladding layer is larger than a band gap of the barrier layer. In a valence band, the band gap of the electron blocking layer lies between the band gap of the barrier layer and the band gap of the cladding layer.
There is provided an Ag-plated material and a related technique, including: an Ag-plated layer on a substrate that comprises a conductive metal; and a plurality of two-layer plating structures on the substrate, the two-layer plating structures having a porous Ni-plated layer and an Ag-plated layer in this order from a substrate side.
C25D 3/46 - ElectroplatingBaths therefor from solutions of silver
H01R 13/03 - Contact members characterised by the material, e.g. plating or coating materials
H01R 43/16 - Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for manufacturing contact members, e.g. by punching and by bending
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
92.
SEMICONDUCTOR LIGHT-EMITTING DEVICE, SEMICONDUCTOR LIGHT-EMITTING DEVICE CONNECTING STRUCTURE, AND METHOD OF PRODUCING SEMICONDUCTOR LIGHT-EMITTING DEVICE
Provided is a semiconductor light-emitting device for which detrimental effects such as discoloration of an electrode or emission failure due to migration are suppressed even when a joint material containing Ag is used, and a method of producing the same. The semiconductor light-emitting device includes a p-type semiconductor layer, a p-type electrode provided on the p-type semiconductor layer, and a pad provided on the p-type electrode. The p-type electrode at least has an ohmic metal layer placed on the p-type semiconductor layer side and a barrier layer that is placed closer to the pad than the ohmic metal layer and includes a TiN layer. In a top view, when a region of the barrier layer that does not overlap an electrical connection region between the pad and the barrier layer is defined as a surface diffusion inhibiting surface, the surface diffusion inhibiting surface is formed in a circular pattern.
Provided is a semiconductor light-emitting element having better light-emitting characteristics than conventional light-emitting elements. A semiconductor light-emitting element according to the present invention comprises a light-emitting layer having a laminate obtained by repeatedly laminating a first group III-V compound semiconductor layer and a second group III-V compound semiconductor layer, wherein: the group III element in the first and second group III-V compound semiconductor layers is one or more selected from the group consisting of Al, Ga, and In; the group V element in the first and second group III-V compound semiconductor layers is one or more selected from the group consisting of As, Sb, and P; the composition wavelength difference between the composition wavelength of the first group III-V compound semiconductor layer and the composition wavelength of the second group III-V compound semiconductor layer is at least 70 nm; and, in a band structure of the laminate, the well depth (Dc) on a conduction band side is greater than the well depth (Dv) on a valence band side, and Dc/(Dc+Dv) is at least 65%.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
94.
AG-COATED MATERIAL, METHOD FOR PRODUCING AG-COATED MATERIAL, AND TERMINAL COMPONENT
There is provided an Ag-coated material and its related technique, including a base material and an Ag film on the base material, the Ag film including alternately laminated at least three Ag layers with average crystal grain sizes different by three times or more.
Provided is a method for recovering valuable materials from lithium ion secondary batteries, said method comprising: a heat treatment step for obtaining a heat-treated material by subjecting a lithium ion secondary battery to a heat treatment; a first classification step for obtaining a coarse-grain product 1 and a fine-grain product, by crushing the heat-treated material and classifying the resulting crushed material using a classification point from 600 µm to 2,400 µm; a pulverization step for pulverizing the fine-grain product to obtain a pulverized material; a second classification step for obtaining a coarse-grain product 2 and a very fine-grain product 1, by classifying the pulverized material using at least one classification point that is smaller than the classification point in the first classification step and is from 75 µm to 1,200 µm; and a magnetic sorting step for sorting, using magnetic force, the very fine-grain product 1 yielded by the second classification step.
Provided is a semiconductor light receiving element having high light receiving sensitivity and a high ESD withstand voltage. The semiconductor light receiving element 100 comprises an n-type InP substrate 110, an n-type InGaAs light absorbing layer 130, and an InP window layer 140, and has a p-type impurity diffusion region 150 formed within the InP window layer 140 to reach the upper part of the n-type InGaAs light absorbing layer 130, wherein the n-type InGaAs light absorbing layer 130 has a thickness of 2.2 µm or more and a carrier density due to n-type impurities of 2.5×1015/cm3 or more.
H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
97.
METHOD FOR RECOVERING VALUABLE MATERIALS FROM LITHIUM ION SECONDARY BATTERY
A method for recovering a valuable substance from a lithium ion secondary battery is provided. The method includes a thermal treatment step of thermally treating a lithium ion secondary battery containing aluminum, carbon, and a copper foil as constituting materials, and a wet sorting step of applying an external force to a thermally treated product obtained in the thermal treatment step in the presence of a liquid, to sort the thermally treated product into a heavy product and a light product containing copper.
RECYCLED POSITIVE ELECTRODE MATERIAL, METHOD FOR PRODUCING SAME, METHOD FOR USING RECYCLED POSITIVE ELECTRODE MATERIAL, RECYCLED POSITIVE ELECTRODE, AND LITHIUM ION SECONDARY BATTERY
Provided is a recycled positive electrode material comprising: lithium, nickel, cobalt, and manganese; 0.3 mass% to 3 mass% of aluminium; and less than 1 mass% of at least one of copper and iron.
H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
H01M 4/131 - Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
H01M 10/54 - Reclaiming serviceable parts of waste accumulators
99.
Silver powder, production method thereof, and conductive paste
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/07 - Metallic powder characterised by particles having a nanoscale microstructure
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×1017 cm−3 or more and less than 3.5×1018 cm−3, an indium concentration of 3.0×1017 cm−3 or more and less than 3.0×1019 cm−3, and a boron concentration of 1.0×1018 cm−3 or more. The average dislocation density of the GaAs wafer is 1500/cm2 or less.
H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
