Abstract

The invention concerns a device (200) for drawing thermoplastic materials such as glass, comprising: a centrifuge (101) comprising a peripheral annular band (103) perforated with a plurality of orifices (105); and a cooled annular inductor assembly (201) coaxial to said band (103), designed to develop induced currents in said band (103), said assembly incorporating a blowing ring (205) coaxial to said band (103), designed to generate a gas stream (207) around the outer periphery of said band (103), in which the entire surface of said assembly (201) turned towards said band (103) is made from an electrically conductive material and contributes to the development of induced currents in said band (103) when the inductor assembly is powered. This device (200; 300; 500; 600) does not comprise an annular burner above the peripheral annular band (103) and does not comprise an annular inductor below the peripheral annular band (103).

IPC Classes  ?

• C03B 37/04 - Manufacture of glass fibres or filaments by using centrifugal force

Abstract

The invention concerns a facility (10) for purifying a material comprising an assembly (30) of crucibles (32, 36, 38; 132). Each crucible comprises a chamber intended to contain the material in the molten state and a discharge conduit for discharging the material in the molten state from the chamber. The assembly comprises at least first, second and third crucibles, the first crucible being at least partly directly above the second crucible, the discharge conduit of the first crucible opening into the second crucible and the second crucible being at least partly directly above the third crucible, the discharge conduit of the second crucible opening into the third crucible. The facility further comprises a heating system (40) which surrounds at least part of each crucible and a system (58) for recovering the material in the molten state supplied by the discharge conduit of one of the crucibles of said assembly.

IPC Classes  ?

• F27B 14/06 - Crucible or pot furnacesTank furnaces heated electrically, e.g. induction crucible furnaces, with or without any other source of heat
• F27B 19/00 - Combinations of different kinds of furnaces that are not all covered by any single one of main groups
• C22B 9/00 - General processes of refining or remelting of metalsApparatus for electroslag or arc remelting of metals
• C22B 9/16 - Remelting metals
• C01B 33/037 - Purification

Abstract

The invention relates to an inductive plasma torch comprising: a cylindrical metal containment cage (1); a metal element solidly connected to the containment cage (1), extending radially from the periphery of one end thereof; and an inductor (5) surrounding the containment cage (1). The aforementioned containment cage (1) and element are divided along axial planes into regularly distributed sectors, and the sectors are rigidly connected to one another alternately by: a portion of the containment cage (1) on the side opposite the element, or by a portion of the element on the side opposite the containment cage (1).

IPC Classes  ?

• H05H 1/30 - Plasma torches using applied electromagnetic fields, e.g. high-frequency or microwave energy
• H05H 1/28 - Cooling arrangements

Abstract

The invention relates to an induction furnace for melting and sturring a material, surrounded by a single field winding (2) powered by a single variable-frequency generator (20) associated with a regulation control means according to a predetermined graph, setting frequency and power values of said furnace and the environment thereof in order to maintain a selected temperature while maintaining a selected stirring speed in the material.

IPC Classes  ?

• H05B 6/06 - Control, e.g. of temperature, of power

Abstract

The invention relates to an apparatus (10) for purifying a semiconductor material (44), which includes at least a chamber containing an atmosphere of at least one inert gas. The apparatus comprises: in the chamber, a crucible (30) intended to contain the semiconductor material in the molten state; a plasma torch (40) intended to remove impurities from the molten semiconductor material in the crucible; and a confinement system (50) intended to define a confinement volume (69) between the crucible and the plasma torch, the confinement system comprising a device (54) for evacuating gaseous compounds and/or particles resulting from the purification of the molten silicon. The evacuation device comprises at least one suction aperture (70) having a cylindrical portion (72) extended by a flared portion (76) opening into the confinement volume.

IPC Classes  ?

• C01B 33/037 - Purification
• C01B 33/02 - Silicon
• C30B 29/06 - Silicon
• C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method

Abstract

The invention relates to equipment for refining a load of silicon(s) that comprises a crucible (5) including at least one sole (20) made of a first refractory material having good heat conductivity, means (26, 28) for cooling the sole, a protection member (30) made of at least a second refractory material having low heat conductivity and to be provided between the crucible and the load, and induction heating means (23, 24) of the load including a winding (23) provided in or under the sole.

IPC Classes  ?

• C01B 33/037 - Purification
• F27B 14/10 - Crucibles
• F27B 14/06 - Crucible or pot furnacesTank furnaces heated electrically, e.g. induction crucible furnaces, with or without any other source of heat
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The invention relates to an equipment (10) for producing blocks of a semiconducting material, comprising at least one housing (12) containing a neutral gas atmosphere, said housing including a fusion system (27, 32, 40) adapted for melting the semiconducting material in a crucible (24); a purification system (50) for removing the impurity of the molten semiconducting material in the crucible; a thermal transfer system (32) for cooling the base of the crucible and a heating system (40) for heating the free surface (63) of the molten semi-conducting material purified in the crucible in order to enhance the solidification of the semiconducting material; and a displacement system (18) for displacing the crucible (24) containing the molten and purified semiconducting material up to a heating system and/or a system for displacing the heating system up to the crucible containing the molten and purified semiconducting material.

IPC Classes  ?

• B01J 6/00 - CalciningFusing
• C01B 33/037 - Purification
• C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure