Abrégé

The invention concerns a device (200) for drawing thermoplastic materials such as glass, comprising: a centrifuge (101) comprising a peripheral annular band (103) perforated with a plurality of orifices (105); and a cooled annular inductor assembly (201) coaxial to said band (103), designed to develop induced currents in said band (103), said assembly incorporating a blowing ring (205) coaxial to said band (103), designed to generate a gas stream (207) around the outer periphery of said band (103), in which the entire surface of said assembly (201) turned towards said band (103) is made from an electrically conductive material and contributes to the development of induced currents in said band (103) when the inductor assembly is powered. This device (200; 300; 500; 600) does not comprise an annular burner above the peripheral annular band (103) and does not comprise an annular inductor below the peripheral annular band (103).

Classes IPC  ?

• C03B 37/04 - Fabrication de fibres ou de filaments de verre par emploi de la force centrifuge

Abrégé

The invention concerns a facility (10) for purifying a material comprising an assembly (30) of crucibles (32, 36, 38; 132). Each crucible comprises a chamber intended to contain the material in the molten state and a discharge conduit for discharging the material in the molten state from the chamber. The assembly comprises at least first, second and third crucibles, the first crucible being at least partly directly above the second crucible, the discharge conduit of the first crucible opening into the second crucible and the second crucible being at least partly directly above the third crucible, the discharge conduit of the second crucible opening into the third crucible. The facility further comprises a heating system (40) which surrounds at least part of each crucible and a system (58) for recovering the material in the molten state supplied by the discharge conduit of one of the crucibles of said assembly.

Classes IPC  ?

• F27B 14/06 - Fours à creusetsFours à bassin chauffés électriquement, p. ex. creusets à induction, avec ou sans une autre source de chaleur
• F27B 19/00 - Combinaisons de différents genres de fours qui ne sont pas tous couverts par un seul des groupes principaux
• C22B 9/00 - Procédés généraux d'affinage ou de refusion des métauxAppareils pour la refusion des métaux sous laitier électroconducteur ou à l'arc
• C22B 9/16 - Refusion des métaux
• C01B 33/037 - Purification

Abrégé

The invention relates to an inductive plasma torch comprising: a cylindrical metal containment cage (1); a metal element solidly connected to the containment cage (1), extending radially from the periphery of one end thereof; and an inductor (5) surrounding the containment cage (1). The aforementioned containment cage (1) and element are divided along axial planes into regularly distributed sectors, and the sectors are rigidly connected to one another alternately by: a portion of the containment cage (1) on the side opposite the element, or by a portion of the element on the side opposite the containment cage (1).

Classes IPC  ?

• H05H 1/30 - Torches à plasma utilisant des champs électromagnétiques appliqués, p. ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
• H05H 1/28 - Dispositions pour le refroidissement

Abrégé

The invention relates to an induction furnace for melting and sturring a material, surrounded by a single field winding (2) powered by a single variable-frequency generator (20) associated with a regulation control means according to a predetermined graph, setting frequency and power values of said furnace and the environment thereof in order to maintain a selected temperature while maintaining a selected stirring speed in the material.

Classes IPC  ?

• H05B 6/06 - Commande, p. ex. de la température, de la puissance

Abrégé

The invention relates to an apparatus (10) for purifying a semiconductor material (44), which includes at least a chamber containing an atmosphere of at least one inert gas. The apparatus comprises: in the chamber, a crucible (30) intended to contain the semiconductor material in the molten state; a plasma torch (40) intended to remove impurities from the molten semiconductor material in the crucible; and a confinement system (50) intended to define a confinement volume (69) between the crucible and the plasma torch, the confinement system comprising a device (54) for evacuating gaseous compounds and/or particles resulting from the purification of the molten silicon. The evacuation device comprises at least one suction aperture (70) having a cylindrical portion (72) extended by a flared portion (76) opening into the confinement volume.

Classes IPC  ?

• C01B 33/037 - Purification
• C01B 33/02 - Silicium
• C30B 29/06 - Silicium
• C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger

Abrégé

The invention relates to equipment for refining a load of silicon(s) that comprises a crucible (5) including at least one sole (20) made of a first refractory material having good heat conductivity, means (26, 28) for cooling the sole, a protection member (30) made of at least a second refractory material having low heat conductivity and to be provided between the crucible and the load, and induction heating means (23, 24) of the load including a winding (23) provided in or under the sole.

Classes IPC  ?

• C01B 33/037 - Purification
• F27B 14/10 - Creusets
• F27B 14/06 - Fours à creusetsFours à bassin chauffés électriquement, p. ex. creusets à induction, avec ou sans une autre source de chaleur
• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives

Abrégé

The invention relates to an equipment (10) for producing blocks of a semiconducting material, comprising at least one housing (12) containing a neutral gas atmosphere, said housing including a fusion system (27, 32, 40) adapted for melting the semiconducting material in a crucible (24); a purification system (50) for removing the impurity of the molten semiconducting material in the crucible; a thermal transfer system (32) for cooling the base of the crucible and a heating system (40) for heating the free surface (63) of the molten semi-conducting material purified in the crucible in order to enhance the solidification of the semiconducting material; and a displacement system (18) for displacing the crucible (24) containing the molten and purified semiconducting material up to a heating system and/or a system for displacing the heating system up to the crucible containing the molten and purified semiconducting material.

Classes IPC  ?

• B01J 6/00 - CalcinationCuisson
• C01B 33/037 - Purification
• C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
• C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée

Abrégé

A thermal gradient is established in a crystallization crucible (1) by means of a heat source (3) and a cooling system. The cooling system includes an exchanger (17) and an adjustable additional heat source (18). Preferably, the cooling system consists of an induction turn (10), cooled by a coolant circulating within the induction turn (10), and of an electrically conducting induction susceptor (11) placed between the crucible (1) and the induction turn (10). The production process includes heating the crucible (1) via the top and controlling the extraction of heat from the crucible (1) downwards via the exchanger (17) and by adjusting the adjustable additional heat source (18).

Classes IPC  ?

• C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger