Abstract

Ion implantation in which an ion beam (10) comprising nitrogen ions is implanted into a substrate (12) is used to reduce the effects of basal plane dislocations in the substrate (12). The substrate (12) is at least partially formed from SiC in the region (14, 16, 21) to be doped or the regions to be doped. The doping concentration (c) of nitrogen doping atoms that are added to the substrate (12) as a result of irradiation with the ion beam (10) is between 1E14cm-3and 5E17cm-3 in each region (14, 16, 21) to be doped.

IPC Classes  ?

• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

A method of monitoring compliance with filter specification during the implantation of ions into a substrate reading a signature of the filter and comparing the read signature with filter signatures stored in a database to identify properties of the filter including at least one of a maximum allowable temperature of the filter and a maximum allowable accumulated ion dose of the filter. The temperature and/or the accumulated ion dose of the filter is measured while ions are implanted into the substrate by an ion beam passing through the filter. The implantation is terminated when the measured temperature or accumulated ion dose of the filter reaches or exceeds the maximum allowable threshold.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

A method for producing an electronic semiconductor component includes doping a first layer made of SiC in a donor substrate by ion implantation, creating a predetermined breaking site in the donor substrate, and producing a connection between donor substrate and acceptor substrate, wherein the first layer is arranged in an area between the acceptor substrate and a remaining part of the donor substrate. Finally, the donor substrate is split in the area of the predetermined breaking site to create the pretreated composite substrate, wherein the pretreated composite substrate has the acceptor substrate and a doped layer connected thereto, which includes at least one section of the first layer of the donor substrate. In addition, implantation defects are healed by laser irradiation during the process.

IPC Classes  ?

• H01L 21/762 - Dielectric regions

Abstract

A computer-implemented method for the simulation of an energy-filtered ion implantation (EFII), including: Determining at least one part of an energy filter; determining a simulation area in a substrate; Defining an ion tunnel for receiving ions directed from an ion beam source; implementing the determined at least one part of the energy filter, the ion beam source, the determined simulation area in the substrate, and the defined ion tunnel in a simulation environment; determining a minimum distance between the implemented at least one part of the energy filter and the implemented substrate for enabling a desired degree of lateral homogenization of the energy distribution in a doping depth profile of the implemented substrate; and defining a total simulation volume.

IPC Classes  ?

• G06F 30/20 - Design optimisation, verification or simulation
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

A method for producing a pretreated composite substrate, which is used as the basis for further processing into electronic semiconductor components, includes doping a first layer of SiC in a donor substrate by ion implantation using an energy filter; generating a predetermined breaking point in the donor substrate; and producing a bonded connection between donor substrate and acceptor substrate, the first layer being arranged in a region between the acceptor substrate and a remaining part of the donor substrate. Lastly, the donor substrate is split in the region of the predetermined breaking point to generate the pretreated composite substrate. The pretreated composite substrate has the acceptor substrate and a doped layer, which is connected to the acceptor substrate and includes at least a portion of the first layer of the donor substrate.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Abstract

A electronic semiconductor component includes a crystal made of monocrystalline SiC, wherein the orientation of at least some subareas of a first surface of the SiC crystal extends substantially in a direction running perpendicularly to the c direction of the crystal structure of the crystal. Also disclosed is a manufacturing process.

IPC Classes  ?

• H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer

Abstract

A method of monitoring compliance with filter specification during the implantation of ions into a substrate reading a signature of the filter and comparing the read signature with filter signatures stored in a database to identify properties of the filter including at least one of a maximum allowable temperature of the filter and a maximum allowable accumulated ion dose of the filter. The temperature and/or the accumulated ion dose of the filter is measured while ions are implanted into the substrate by an ion beam passing through the filter. The implantation is terminated when the measured temperature or accumulated ion dose of the filter reaches or exceeds the maximum allowable threshold.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An energy filter assembly (1, 100, 200, 300) for ion implantation system is provided comprising an energy filter (25), a first filter frame (40), and at least one coupling element (50). The energy filter (25) has at least one filter element (25a) absorbing the beam energy of an ion beam (10). The at least one coupling element (50) elastically connects the first filter frame (40) with the energy filter (25).

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

An ion implantation device (20) is provided comprising an energy filter (25) with at least one filter layer (32) and at least one support element (30) for supporting the energy filter (25), wherein the at least one support element (30) overlaps at least part of the energy filter (25).

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
• C23C 14/48 - Ion implantation

Abstract

A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• C23C 14/18 - Metallic material, boron or silicon on other inorganic substrates
• C23C 14/48 - Ion implantation
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body

Abstract

An ion implantation device (20) is provided comprising an energy filter (25) with a structured membrane, wherein the energy filter (25) is heated by absorbed energy from the ion beam, and at least one additional heating element (50a-d, 55a-d, 60, 70) for heating the energy filter (25).

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An ion implantation device (20) comprising an energy filter (25), wherein the energy filter (25) has a thermal energy dissipation surface area, wherein the energy filter (25) comprises a membrane with a first surface and a second surface disposed opposite to the first surface, the first surface being a structured surface.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

The invention relates to a method for producing an electronic semiconductor component, comprising the doping of a first layer (21) of SiC in a donor substrate (12) by means of ion implantation, generating a predetermined breaking point (26) in the donor substrate (12), and producing a connection between donor substrate (12) and acceptor substrate (28), the first layer (21) being arranged in a region between the acceptor substrate (28) and a remaining part (22) of the donor substrate (12). Lastly, the donor substrate (12) is split in the region of the predetermined breaking point (26) to generate the pretreated composite substrate (18), wherein the pretreated composite substrate (18) has the acceptor substrate (28) and a doped layer (32), which is connected to said acceptor substrate and comprises at least a portion of the first layer (21) of the donor substrate (12). During the process, implantation defects are in addition repaired by means of laser irradiation (43).

IPC Classes  ?

• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer

Abstract

VV).

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

vv).

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

A method for the production of semiconductor components with a vertical structure includes the step of providing a substrate of semiconductor material with a thickness of 4 μm to 300 μm. Then a doped drift zone of the semiconductor component is produced by ion implantation in the substrate using an energy filter, wherein the energy filter is a microstructured membrane with a predefined structural profile for setting a dopant depth profile and/or a defect depth profile produced in the substrate by the implantation. When the drift zone is being produced, the entire drift zone is doped, and the drift zone is produced completely without any epitactic deposition.

IPC Classes  ?

• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H10D 30/66 - Vertical DMOS [VDMOS] FETs
• H10D 62/17 - Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
• H10D 62/832 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe

Abstract

A device for implanting particles in a substrate comprises a particle source and a particle accelerator for generating an ion beam of positively charged ions. The device also comprises a substrate holder and an energy filter, which is arranged between the particle accelerator and the substrate holder. The energy filter is a microstructured membrane with a predefined structural profile for setting a dopant depth profile and/or a defect depth profile produced in the substrate by the implantation. The device also comprises at least one passive braking element for the ion beam. The at least one passive braking element is arranged between the particle accelerator and the substrate holder and is spaced apart from the energy filter.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/08 - Ion sourcesIon guns
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

An ion implantation device (20) is provided comprising an energy filter (25) with at least one filter layer (32) and at least one support element (30) for supporting the energy filter (25), wherein the at least one support element (30) is overlaps at least part of the energy filter (25).

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

The method for producing a pretreated composite substrate (18), which is used as the basis for further processing into electronic semiconductor components, comprises: doping a first layer (21) of SiC in a donor substrate (12) by means of ion implantation using an energy filter (20); generating a predetermined breaking point (26) in the donor substrate (12); and producing a bonded connection between donor substrate (12) and acceptor substrate (28), the first layer (21) being arranged in a region between the acceptor substrate (28) and a remaining part (22) of the donor substrate (12). Lastly, the donor substrate (12) is split in the region of the predetermined breaking point (26) to generate the pretreated composite substrate (18), wherein the pretreated composite substrate (18) has the acceptor substrate (28) and a doped layer (32), which is connected to said acceptor substrate and comprises at least a portion of the first layer (21) of the donor substrate (12).

IPC Classes  ?

• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/762 - Dielectric regions
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An energy filter assembly (1, 100, 200, 300) for ion implantation system is provided comprising an energy filter (25), a first filter frame (40), and at least one coupling element (50). The energy filter (25) has at least one filter element (25a) absorbing the beam energy of an ion beam (10). The at least one coupling element (50) elastically connects the first filter frame (40) with the energy filter (25).

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

The electronic semiconductor component (50) includes a crystal (53) made of monocrystalline SiC, wherein the orientation of at least some subareas of a first surface (58) of the SiC crystal (53) extends substantially in a direction running perpendicularly to the c direction (c) of the crystal structure of the crystal (53). Also disclosed is a manufacturing process.

IPC Classes  ?

• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Abstract

The energy filter for use in the implantation of ions into a substrate is micropatterned for establishing, in the substrate, a dopant depth profile and/or defect depth profile brought about by the implantation, and has two or more layers or layer sections which are arranged one after another in the height direction of the energy filter. The energy filter also has a plurality of cavities each of which arranged between at least two layers or layer sections, with interior walls bounding the cavities and joining the at least two layers or layer sections to one another.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• G21K 1/10 - Scattering devicesAbsorbing devices

Abstract

A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

An ion implantation device (20) comprising an energy filter (25), wherein the energy filter (25) has a thermal energy dissipation surface area, wherein the energy filter (25) comprises a membrane with a first surface and a second surface disposed opposite to the first surface, the first surface being a structured surface.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• G21K 1/10 - Scattering devicesAbsorbing devices
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

An ion implantation device (20) is provided comprising an energy filter (25) with a structured membrane, wherein the energy filter (25) is heated by absorbed energy from the ion beam, and at least one additional heating element (50a-d, 55a-d, 60, 70) for heating the energy filter (25).

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• G21K 1/10 - Scattering devicesAbsorbing devices
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• C23C 14/18 - Metallic material, boron or silicon on other inorganic substrates
• C23C 14/48 - Ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body

Abstract

The invention relates to an energy filter (20) for use in the implantation of ions into a substrate (12), which energy filter is microstructured in order to set a doping-material depth profile and/or a defect depth profile in the substrate (12), which profiles are brought about by the implantation, and has two or more layers or layer portions (14) which are arranged one behind the other in the height direction of the energy filter (20). The energy filter (20) also has a plurality of cavities (16), each of which is arranged between at least two layers or layer portions (14), wherein intermediate walls (18) delimit the cavities (16) and interconnect the at least two layers or layer portions (14).

IPC Classes  ?

• H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• G21K 1/10 - Scattering devicesAbsorbing devices
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

The invention relates to an implantation device, an implantation system and a method. The implantation device includes a filter frame and a filter held by the filter frame, and a collimator structure. The filter is designed to be irradiated by an ion beam passing through the filter. The collimator structure is arranged on the filter, in the transmitted beam downstream of the filter, or on the target substrate.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• G21K 1/10 - Scattering devicesAbsorbing devices
• G21K 1/04 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

The method for producing semiconductor components (4) having a vertical structure comprises firstly the provision of a substrate (12) consisting of semiconductor material with a thickness of between 4 µm and 300 µm. A doped drift zone (21) of the semiconductor component (4) is subsequently produced by ion implantation into the substrate (12), using an energy filter (20), the energy filter (20) being a micro-structured membrane with a pre-defined structural profile for setting, in the substrate (12), a dopant depth profile and/or defect-depth profile brought about by the implantation process. As the drift zone (21) is produced, the entire drift zone (21) is doped, and the drift zone (21) is produced entirely without epitaxy.

IPC Classes  ?

• H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
• H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 21/336 - Field-effect transistors with an insulated gate

Abstract

The device for implanting particles into a substrate (12) comprises a particle source (2) and a particle accelerator (4) for producing an ion beam (10) consisting of positively-charged ions. The device also comprises a substrate mount (30) and an energy filter (20) positioned between the particle accelerator (4) and the substrate mount (30). The energy filter (20) is a micro-structured membrane with a pre-defined structural profile for setting, in the substrate (12), a dopant depth profile and/or defect-depth profile brought about by the implantation process. The device also has a passive deceleration element (22) for the ion beam (10), said element being positioned between the particle accelerator (4) and the substrate mount (30) and spaced apart from the energy filter (20).

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/302 - Controlling tubes by external information, e.g. programme control

Abstract

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• C23C 14/18 - Metallic material, boron or silicon on other inorganic substrates
• C23C 14/48 - Ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 29/32 - Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

An implantation device, an implantation system and a method. The implantation device comprises a filter frame and a filter held by the filter frame, wherein said filter is designed to be irradiated by an ion beam.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

Disclosed is a method comprising the irradiation of a wafer (8) by means of an ion beam (2) that passes through an implantation filter (6), the ion beam (2) being electrostatically deviated in a first direction and a second direction in order to move the ion beam (2) over the wafer (8), and the implantation filter (6) being moved in the second direction to match the movement of the ion beam (2).

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy

Abstract

The invention relates to an implantation device, an implantation system and a method. The implantation device comprises a filter frame and a filter held by the filter frame, wherein said filter is designed to be irradiated by an ion beam.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation