NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japan)
EMD CORPORATION (Japan)
Inventor
Hori, Masaru
Oda, Osamu
Ebe, Akinori
Abstract
A surface treatment device (1) comprises: a vacuum container (11); a treated object retaining unit (122) for retaining an object to be treated and a treated object movement mechanism (12) that are provided in the vacuum container (11), the treated object movement mechanism (12) causing the treated object retaining unit (122) to circle along a circling path; a plurality of surface treatment units (13, 14) that are provided to face the circling path to carry out surface treatment with respect to the surface of the object to be treated by using predetermined treatment gas; and an exhaust port (16) that is provided inside the circling path to discharge the treatment gas and/or reaction gas generated by reaction of the treatment gas to the outside of the vacuum container (11).
C23C 14/54 - Controlling or regulating the coating process
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
OSAKA RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
Inventor
Ebe, Akinori
Kondo, Yusuke
Kakehi, Yoshiharu
Satoh, Kazuo
Ikuhara, Shiro
Iwasaki, Shinichi
Ogawa, Soichi
Abstract
A sputtering apparatus includes: target holders holding targets facing each other; a substrate holder on a side of a plasma generation region between the targets; main magnetic field generation units on the back surface sides of the target holders to generate main magnetic fields on surfaces of the targets in which magnets are disposed such that opposite poles face each other; a power supply to generate an electric field in a plasma generation region; a radio-frequency electromagnetic field generation unit to generate a radio-frequency electromagnetic field on a side of the plasma generation region facing the substrate holder with the plasma generation region between them; and a plasma source gas introduction unit to introduce a plasma source gas into the plasma generation region, wherein a device for generating a magnetic field does not exist at the ends of the target holders on a side of radio-frequency electromagnetic field generation unit.
A plasma generator includes an AC power supply, a power supply electrode and a ground electrode, one of which is disposed in a gas flow path and the other of which is a conductive wall constituting the gas flow path, an inflexible connection member configured to electrically connect the AC power supply and the power supply electrode, and an insulating material (power supply side insulating material, ground side insulating material) covering a side of one of the power supply electrode and the ground electrode, the side facing the other electrode.
OSAKA RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)
Inventor
Ebe, Akinori
Kondo, Yusuke
Kakehi, Yoshiharu
Satoh, Kazuo
Ikuhara, Shiro
Iwasaki, Shinichi
Abstract
A sputtering device (10) is provided with: a first target holder (111) and a second target holder (112) respectively holding a first target (T1) and a second target (T2) with surfaces thereof opposing each other; a substrate holder (16) provided laterally of a plasma generating region (R) between the first target (T1) and the second target (T2) respectively being held by the first target holder (111) and the second target holder (112); a first main magnetic field generating portion (121) and a second main magnetic field generating portion (122) which are respectively provided on the back side of the first target holder (111) and the second target holder (112), in which magnets are arranged with mutually opposite poles thereof opposing each other, and which respectively generate a first main magnetic field and a second main magnetic field on the surfaces of the first target (T1) and the second target (T2) being held by the respective holders; a power supply for applying predetermined potentials to the first target holder (111) and the second target holder (112) to generate an electric field in the plasma generating region (R); a high frequency electromagnetic field generating portion (17) provided in the plasma generating region (R) on the side opposing the substrate holder (16) across the plasma generating region (R) to generate a high frequency electromagnetic field in the plasma generating region (R); and a plasma raw material gas introducing portion (15) for introducing a plasma raw material gas into the plasma generating region (R). There is no means for generating a magnetic field at the ends of the first target holder (111) and the second target holder (112) on the side of the high frequency electromagnetic field generating portion (17).
An LED light irradiation device (10) comprises: an LED module (11) in which a plurality of LED elements (111) are connected in series; a current setting unit (13) that sets a value for the current flowing to the LED module (11) on the basis of information inputted by a user; a constant current power supply (12) that supplies the current having the value set by the current setting unit (13) to the LED module (11); a voltage value acquisition unit (141) that acquires voltage values at both ends of the LED module (11); a temperature measurement unit (142) that measures the temperature at a point (1421) at which the temperature changes depending on the temperature of the LED module (11); a database (143) that stores the temperature at the point (1421), the set value of the current, and the relationship between the voltages at both ends, in a case where the LED module (11) operates normally; and a short-circuit abnormality determination unit (144) that, on the basis of the measured value of the temperature at the point (1421) measured by the temperature measurement unit (142), the set value of the current, and the voltage values at both ends detected by the voltage value acquisition unit (141), determines with reference to the database (143) whether a short-circuit abnormality has occurred in any of the plurality of LED elements (111).
H05B 45/54 - Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDsCircuit arrangements for operating light-emitting diodes [LED] responsive to LED lifeProtective circuits in a series array of LEDs
Provided is a dielectric barrier discharge-type plasma generating device that is provided in a gas processing device for generating plasma by ionizing gas flowing in a gas flow path, and that is capable of preventing a short circuit and unwanted discharge. A plasma generating device (10) comprises: an alternating current power source (14); a power source electrode (111) and ground electrode (121), one of which is disposed in a gas flow path and the other of which is a wall made of a conductor constituting the gas flow path; an inflexible connection material (13) which electrically connects the alternating current power source (14) and the power source electrode (111); and insulation material (power source side insulation material (121), ground side insulation material (122)) which, on each of the power source electrode (111) and the ground electrode (121), covers the side that faces the other electrode. Use of the inflexible connection material (13) prevents the connection material (13) from unwantedly coming into contact or proximity with members in the plasma generating device (10) other than the power source electrode, even if vibration from the gas flowing in the gas flow path is transmitted to the connection material (13) via the power source electrode (111), and thus it is possible to prevent a short circuit and unwanted discharge.
F01N 3/028 - Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of filters using means for regenerating the filters, e.g. by burning trapped particles using electric or magnetic heating using microwaves
7.
Radio-frequency antenna and plasma processing device
A radio-frequency antenna through which a high amount of current can be efficiently passed even at a radio-frequency level for plasma generation, as well as a plasma processing device utilizing the radio-frequency antenna. A radio-frequency antenna includes a metal fiber sheet. A plasma processing device includes: a vacuum container including a wall having an opening; a radio-frequency antenna including a metal fiber sheet and located at the opening; and a dielectric protection plate located closer to the interior of the vacuum container than the radio-frequency antenna and configured to close the opening in a gas-tight manner. The radio-frequency antenna including a metal fiber sheet has a larger surface area and a lower impedance to a radio-frequency current than a radio-frequency antenna including a metal plate having the same outer shape. Therefore, it allows a radio-frequency current commonly used for plasma generation to be more efficiently passed through in large amounts.
An inductively coupled plasma source with a simple configuration, has an antenna cooling mechanism capable of reducing costs required for such devices. The plasma source is configured to generate plasma in a vacuum vessel, and includes a frame (antenna fixing frame) provided in a wall of the vacuum vessel and a surface antenna fixed in the frame. Periphery of the antenna is surrounded by the frame, so that heat generated in the antenna flows from the periphery to the frame and further flows from the frame to the vacuum vessel. Thus, the antenna is efficiently cooled. Therefore, a liquid or gas refrigerant is unnecessary, and thus the configuration can be simplified. Furthermore, a temperature control device and a circulation device are unnecessary, so that the cost required for the devices is reduced.
The present invention addresses the problem of providing a plasma source capable of supplying plasma to a plasma processing space in a state in which a gas is sufficiently ionized. This plasma source 10 is a device for supplying plasma to a plasma processing space wherein processing using plasma is to be carried out. This plasma source 10 comprises: a plasma generation chamber 11; an opening 12 wherethrough the plasma generation chamber 11 and the plasma processing space communicate; a high-frequency antenna 13, which is a coil having a number of turns of less than one and provided at a position allowing a high-frequency electromagnetic field of a predetermined intensity required for generating the plasma to be generated inside the plasma generation chamber 11; voltage application electrodes 14 provided inside the plasma generation chamber 11 at a location near the opening 12; and a gas supply unit (gas supply tube) 15 supplying a plasma source gas, and located inside the plasma generation chamber 11 that is nearer to a side opposite to the opening 12 than to the voltage application electrode 14.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
Provided is a sputtering thin film forming apparatus, which has high film-forming speed, and can form a thin film having high qualities. A sputtering apparatus (10) is provided with: a target holder (14) that is provided in a vacuum container (11); a substrate holder (15) that is provided to face the target holder (14); a means (19) that introduces a plasma generating gas into the vacuum container (11); a means (161) that generates an electrical field for sputtering, said electrical field being in a region that includes a surface of a target (T); a high-frequency antenna disposing chamber (182), which is provided between an inner surface and outer surface of a wall of the vacuum container (11), and is partitioned from the inside of the vacuum container by means of a dielectric material window (183); and a high-frequency antenna (13), which is disposed inside of the high-frequency antenna disposing chamber (182), and generates a high-frequency induction field in the region that includes the surface of the target held by means of the target holding means.
Provided is a high-frequency antenna wherein shielding or attenuation in the intensity of a high-frequency induction field can be inhibited even when materials for a thin film adhere to the surface of the antenna. The high-frequency antenna (10) is provided with: a linear antenna conductor (13); a dielectric protection tube (14) formed around the antenna conductor (13); and deposition shields (15) that are shields formed around the dielectric protection tube (14), that cover the dielectric protection tube (14) at least at one portion thereof along an arbitrary line in the longitudinal direction of the antenna conductor (13), and that has at least one opening (153). Although materials for a thin film adhere to the surfaces of the protection tube and the deposition shields, the adhering materials will be broken off at least at one portion in the longitudinal direction of the antenna conductor. Therefore, a high-frequency induction field can be prevented from being shielded when the materials for a thin film are conductive, and the intensity of the high-frequency induction field can be inhibited from attenuating when the materials for a thin film are not conductive.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
The purpose of the present invention is to provide, at low cost, an internal antenna-type plasma processing apparatus, which can be easily maintained and checked, and can stably supply plasma. This plasma processing apparatus is provided with a plurality of antenna units (20) on the upper wall (111) of a vacuum container (11). Each of the antenna units (20) is provided with: a dielectric housing (21), which is provided such that the housing protrudes into the vacuum container (11) from the upper wall (111) of the vacuum container (11); a cover (22) having a second gas release port (25), from which the atmosphere in the housing is released to the outside of the vacuum container; and a high frequency antenna (23), which is fixed to the cover (22) via a feed-through (24), and which is composed of a conductor tube having gas passing holes (232) in the tube wall. An inert gas is supplied to the inside of the high frequency antenna (23), the inside of the housing (21) is filled with the inert gas through the gas passing holes (232), and the inert gas is released to the outside of the vacuum container (11) through the second gas release port (25).
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Provided is a plasma processing apparatus, which can generate plasma at a higher density than the densities at which plasma is generated by plasma processing apparatuses employing external antenna systems, and which can suppress mixing of impurities in a subject to be processed, and generation of particles, said mixing of impurities and generation of particles being problems of plasma processing apparatuses employing internal antenna systems. This plasma processing apparatus has: a vacuum container (11) composed of a metal; an antenna disposed section (14) having a high frequency antenna (18) disposed inside of a through hole (cavity), which is provided in the upper wall (112) of the vacuum container (11); and a partitioning plate (15), which is composed of a dielectric material, and which covers the whole inner surface (1121) of the upper wall (112). In this plasma processing apparatus, since a step is prevented from being generated between the inner surface (1121) and the partitioning plate (15) by covering the whole inner surface (1121) side of the upper wall (112) with the partitioning plate (15), particles are prevented from being generated due to generation of adhered material on a step portion.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
The problem addressed by the present invention is the provision of a plasma treatment device with which it is possible to easily control the electron energy distribution of plasma in accordance with the type of gas molecules to be dissociated and the dissociation energy thereof. A plasma treatment device (10) according to the present invention comprises: a plasma treatment chamber (11); a plasma production chamber (12) that communicates with the plasma treatment chamber (11); a high-frequency antenna (16) for producing plasma; a plasma control plate (17) for controlling the electron energy of the plasma; and an operation rod (171) and a movement mechanism (172) for adjusting the position of the plasma control plate (17). By means of this plasma treatment device (10), it is possible to control the electron energy distribution of the plasma produced inside the plasma production chamber (12) simply by using the movement mechanism (172) to move the operation rod (171) longitudinally in order to adjust the distance between the high-frequency antenna (16) and the plasma control plate (17). It is therefore possible to easily treat plasma in accordance with the type of gas molecules to be dissociated and the dissociation energy thereof.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
Provided is a thin-film solar cell using a semiconductor thin film having a columnar structure, the thin-film solar cell capable of suppressing a leak current. This thin-film solar cell (10) has a structure in which an n-type a-Si region (131) and a p-type a-Si region (151) are disposed with a predetermined distance spaced therebetween on a plane parallel to respective layers so as not to overlap each other with a μc-Si layer (14) sandwiched therebetween. Consequently, a layer (a first insulating layer (132) and a second insulating layer (152)) produced from SiOx that is an insulating member is disposed at one or both ends of a crystal grain boundary (30) formed between columnar crystallites in the μc-Si layer (14), thereby making it possible to prevent an electric current from being short-circuited via the crystal grain boundary (30) between the n-type a-Si layer (131) and the p-type a-Si layer (151).
H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices
H01L 33/16 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/34 - Materials of the light emitting region containing only elements of group IV of the periodic system
Provided is a sputtering device which can efficiently generate high density plasma on the surface of a sputtering target and form a film at high speed. Also provided are a plasma processing device and a large-area sputtering device which has a simple structure, allows for the simple attachment and detachment of the sputtering target, and is readily maintained. The sputtering device has an inductive coupling-type antenna conductor plate mounted in a section of a vacuum vessel, wherein a sputtering target plate is attached at the plasma forming space side of the inductive coupling-type antenna conductor, one end of the antenna conductor is connected to a high-frequency power supply, and the other opposing end is grounded by way of a capacitor. In addition, a plurality of antenna conductors are provided together to construct a large-area sputtering device.
A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.
A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.
The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.
The present invention aims at providing a plasma processing apparatus for performing a plasma processing on a planar substrate body to be processed, the apparatus being capable of generating the plasma with good uniformity and efficiently using the plasma, and having a high productivity. That is, the plasma processing apparatus according to the present invention includes: a vacuum chamber; one or plural antenna supporters (plasma generator supporters) projecting into the internal space of the vacuum chamber; radio-frequency antennas (plasma generators) attached to each antenna supporter; and a pair of substrate body holders provided across the antenna supporter in the vacuum chamber, for holding a planar substrate body to be processed.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/503 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
C03C 17/22 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with other inorganic material
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
Provided is a plasma processing apparatus in which a strong induction field can be formed in a vacuum vessel, said apparatus being capable of preventing sputtering and the temperature rise of an antenna conductor and the formation of particles. A plasma processing apparatus (10) comprises a vacuum vessel (11), a high frequency antenna (21) provided between the inner surface (111A) and the outer surface (111B) of the wall of the vacuum vessel (11), and a dielectric partition member (16) for separating the high frequency antenna (21) from the inside portion of the vacuum vessel (11). This makes it possible to form stronger induction field in the vacuum vessel (11) than in an external antenna type apparatus. The partition member (16) can suppress the sputtering of the high frequency antenna (21), the temperature rise of the high frequency antenna (21), and the formation of particles, all of which are caused by the plasma generated in the vacuum vessel (11).
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Provided is a plasma processing apparatus in which a strong high frequency induced electric field can be formed in a vacuum vessel, which is capable of making the density distribution of plasma more uniform and preventing contamination of a substrate due to emergence of particles and sputtering of the conductor of a high frequency antenna. A plasma processing apparatus (10) is an apparatus of inductive coupling type using high frequency discharge and comprises a vacuum vessel (11); an antenna arrangement portion (12) provided between the inner surface (111B) and the outer surface (111A) of the wall of the vacuum vessel (11); one high frequency antenna which is disposed in the antenna arrangement portion (12) and terminated without circling; and a dielectric partition member (15) for separating the antenna arrangement portion (12) from the inside portion (112) of the vacuum vessel. The plasma processing apparatus (10) is characterized by that the length of the high frequency antenna (13) is shorter than the length of quarter wavelength of the high frequency.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Disclosed is a thin film-forming sputtering device capable of performing the sputtering process at a high speed. The thin film-forming sputtering device (10) is equipped with: a vacuum chamber (11); a target holder (13) provided within the vacuum chamber (11); a substrate holder (14) provided facing the target holder (13); a power source (15) that applies a voltage between the target holder (13) and the substrate holder (14); a magnet (12) for magnetron sputtering that is provided on the back side of the target holder (13) and that generates a magnetic field having a component that is parallel to a target (T), and a high-frequency antenna (16) that generates a high-frequency inductively-coupled plasma in a region in the vicinity of target (T), wherein a magnetic field that is generated by the magnet (12) for magnetron sputtering and is at or above a prescribed strength exists. By means of the high-frequency inductively-coupled plasma generated by the high-frequency antenna (16), the supply of electrons to within the magnetic field can be accelerated, and the sputtering process can be performed at a high speed.
A flat-board-like high frequency antenna conductor (13) is arranged on a flange, which also serves as a part of a vacuum container and has a rectangular opening section, so as to cover the opening section by sandwiching an insulating glass frame body surrounding the opening section. A high frequency power supply is connected to the high frequency antenna conductor at one end thereof along the long side, with a matching box therebetween, and the other end is grounded, then, power is supplied so that a high frequency current flows from the one end to the other end of the high frequency antenna conductor. Thus, impedance of the high frequency antenna conductor is reduced and high density plasma at a low electron temperature can be efficiently generated.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/507 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
Provided is a high frequency antenna unit which can generate high-density discharge plasma in a vacuum container. The high frequency antenna unit is provided with a high-frequency antenna (11) which makes a high-frequency current to flow; a protection tube (12), which is arranged on the circumference of a part that exists on the high frequency antenna portion in the vacuum container; and a buffer region (13) arranged between the high-frequency antenna (11) and the protection tube (12). The 'buffer region' is a region that suppresses acceleration of electrons, and is formed of, for instance, vacuum or an insulator. Thus, since generation of electrical discharge between the antenna (11) and the protection tube (12) can be suppressed, high-density discharge plasma can be generated in the vacuum container.
Disclosed is an apparatus for performing a plasma process on a planar object base. This plasma processing apparatus is good in utilization efficiency and uniformity of plasma, while exhibiting high productivity. Specifically disclosed is a plasma processing apparatus comprising a vacuum chamber (11), one or more of antenna-supporting members (plasma generating means-supporting members) (12) so formed as to project into an internal space (111) of the vacuum chamber (11), a high-frequency antenna (plasma generating means) (13) attached to each of the antenna-supporting members (12), and a pair of base holding members (16) arranged in the vacuum chamber (11), with the antenna-supporting members (12) lying between them, for holding a planar object base (21).
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
Disclosed is a plasma treatment device that can efficiently use the plasma generated. Plasma treatment device (10) comprises vacuum chamber (11), antenna (plasma-generating means) support part (12) furnished to project into internal space (111) of vacuum chamber (11), and high-frequency antenna (plasma-generating means) (13) attached to antenna support part (12). The area to which the high-frequency antenna is attached is thereby smaller and the plasma usage efficiency improved.
H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
patents
