A method of producing a laminate, wherein a wood body is provided, a curable composition in the liquid state is applied thereto, and the composition cures, wherein the composition contains at least one organic binder and at least 80% by weight of mineral fillers, based on the overall composition. The method enables permanent bonding of wood bodies and compositions that are based on organic binder and have a high content of mineral fillers. The laminates obtained from the method are comparatively lightweight, stable and durable, and are particularly suitable as sustainable components in building construction, especially as a roof element.
B27N 7/00 - After-treatment, e.g. reducing swelling or shrinkage, surfacingProtecting the edges of boards against access of humidity
B05D 7/06 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to wood
E04F 13/10 - Coverings or linings, e.g. for walls or ceilings composed of covering or lining elementsSub-structures thereforFastening means therefor composed of a plurality of similar covering or lining elements of wood
2.
METHOD FOR PRODUCING A LAMINATE FROM WOOD AND A CURABLE COMPOSITION
The invention relates to a method for producing a laminate, characterized in, characterized in that - a wooden body is provided, - a curable composition in the liquid state is applied to the latter, and - the composition cures, the composition containing at least one organic binder and at least 80 % by weight of mineral fillers based on the entire composition. The method enables the permanent joining of wooden bodies and compositions based on an organic binder and having a high content of mineral fillers. The laminates obtained from the method are comparatively light, stable and robust and are especially suitable as sustainable components for building construction, particularly as a ceiling element.
B05D 7/06 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to wood
B27N 7/00 - After-treatment, e.g. reducing swelling or shrinkage, surfacingProtecting the edges of boards against access of humidity
B28B 1/00 - Producing shaped articles from the material
B28B 1/16 - Producing shaped articles from the material by simple casting, the material being neither forcibly fed nor positively compacted for producing layered articles
B28B 11/04 - Apparatus or processes for treating or working the shaped articles for coating
B28B 11/24 - Apparatus or processes for treating or working the shaped articles for curing, setting or hardening
B28B 19/00 - Machines or methods for applying the material to surfaces to form a permanent layer thereon
B32B 13/10 - Layered products essentially comprising a water-setting substance, e.g. concrete, plaster, asbestos cement, or like builders' material comprising such substances as the main or only constituent of a layer, next to another layer of a specific substance of woodLayered products essentially comprising a water-setting substance, e.g. concrete, plaster, asbestos cement, or like builders' material comprising such substances as the main or only constituent of a layer, next to another layer of a specific substance of wood particle board
C04B 40/00 - Processes, in general, for influencing or modifying the properties of mortars, concrete or artificial stone compositions, e.g. their setting or hardening ability
E04B 1/26 - Structures comprising elongated load-supporting parts, e.g. columns, girders, skeletons the supporting parts consisting of wood
3.
METHOD FOR PRODUCING A LAMINATE OF WOOD AND CEMENTITIOUS COMPOSITIONS
The invention relates to a method for producing a laminate, characterized in that (i) a wooden element is provided, (ii) the wooden element is coated on the top side with a an adhesive that is applied in liquid form and comprises at least one polymer that is liquid at room temperature and contains silane groups, at least one liquid epoxy resin and at least one amine hardener, (iii) the applied adhesive is covered with a layer of a liquid cementitious composition while still wet, and (iv) the liquid cementitious composition and the adhesive each cure. The method enables the durable joining of wooden elements and cementitious elements in an easy-to-implement, wet-on-wet method. The laminates obtained from the method are comparatively light, stable and robust and are especially suitable as sustainable components in above-ground construction, particularly as a ceiling element.
B05D 7/00 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
B05D 7/06 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to wood
B28B 19/00 - Machines or methods for applying the material to surfaces to form a permanent layer thereon
E04B 5/02 - Load-carrying floor structures formed substantially of prefabricated units
E04C 3/12 - JoistsGirders, trusses, or truss-like structures, e.g. prefabricatedLintelsTransoms of wood, e.g. with reinforcements, with tensioning members
E04C 3/29 - JoistsGirders, trusses, or truss-like structures, e.g. prefabricatedLintelsTransoms built-up from parts of different materials
4.
Surface treatment of a solid electrolyte to lower the interfacial resistance between the solid electrolyte and an electrode
Disclosed are electrochemical devices, such as sodium ion conducting solid state electrolytes, sodium battery electrodes, and solid-state sodium metal batteries including these electrodes and solid state electrolytes. One example method for preparing a sodium/sodium-β″-alumina interface with low interfacial resistance and capable of achieving high current density in an electrochemical cell includes the steps of: (a) providing a precursor electrolyte having a resistive surface region, wherein the precursor electrolyte comprises sodium-β″-alumina; (b) removing at least a portion of the resistive surface region; (c) heating the precursor electrolyte thereby forming a solid state electrolyte, and (d) placing a side of the solid state electrolyte in contact with a sodium anode.
A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
H01L 31/0445 - PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
6.
Fabricating thin-film optoelectronic devices with added potassium
A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium. The method (200) and apparatus (300) are advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0445 - PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C23C 28/04 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of inorganic non-metallic material
B23B 27/14 - Cutting tools of which the bits or tips are of special material
9.
Method for building prestressed concrete structures by means of profiles consisting of a shape-memory alloy, and structure produced using said method
The invention relates to a method according to which a profile consisting of a shape-memory alloy is placed into concrete, or a concrete to be reinforced is roughened on the outside, then profiles (2) consisting of a shape-memory alloy are fastened to the roughened outside (9) of the structure (6) and a cementitious matrix is applied to the roughened outside (9) to cover the profiles (2). After the cementitious matrix has set, said profiles (2) produce a contraction force and thus a tension as a result of the input of heat. The mortar covering layer (16) thereby acts as a reinforcement layer owing to the interlocking of the mortar covering layer (16) with the roughened outside (9) of the structure (6). The profiles (2) run in an outer mortar as a reinforcement layer (16) of the outside of a structure along the outside of the structure inside the mortar or reinforcement layer (16). A structure can also be prepared for a prestress in the equipped mortar or reinforcement layer by the input of heat, in that electrical cables (3) are routed from the end regions thereof to the outside of the mortar or reinforcement layer (16) or the end regions of the electrical cables (3) are accessible by removing inserts (5).
E04G 23/02 - Repairing, e.g. filling cracksRestoringAlteringEnlarging
E04B 1/16 - Structures made from masses, e.g. concrete, cast or similarly formed in situ with or without making use of additional elements, such as permanent forms, sub-structures to be coated with load-bearing material
E04C 5/07 - Reinforcing elements of material other than metal, e.g. of glass, of plastics, or not exclusively made of metal
10.
Fabricating thin-film optoelectronic devices with added potassium
A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium. The method (200) and apparatus (300) are advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
11.
A METHOD TO CREATE PRESTRESSED CONCRETE STRUCTURES BY MEANS OF PROFILES MADE FROM A SHAPE-MEMORY ALLOY AS WELL AS STRUCTURE BUILT ACCORDING TO THE METHOD
The invention relates to a method according to which a profile consisting of a shape-memory alloy is placed into concrete, or a concrete to be reinforced is roughened on the outside, then profiles (2) consisting of a shape-memory alloy are fastened to the roughened outside (9) of the structure (6) and a cementitious matrix is applied to the roughened outside (9) to cover the profiles (2). After the cementitious matrix has set, said profiles (2) produce a contraction force and thus a tension as a result of the input of heat. The mortar covering layer (16) thereby acts as a reinforcement layer owing to the interlocking of the mortar covering layer (16) with the roughened outside (9) of the structure (6). The profiles (2) run in an outer mortar as a reinforcement layer (16) of the outside of a structure along the outside of the structure inside the mortar or reinforcement layer (16). A structure can also be prepared for a prestress in the equipped mortar or reinforcement layer by the input of heat, in that electrical cables (3) are routed from the end regions thereof to the outside of the mortar or reinforcement layer (16) or the end regions of the electrical cables (3) are accessible by removing inserts (5).
B28B 23/04 - Arrangements specially adapted for the production of shaped articles with elements wholly or partly embedded in the moulding material wherein the elements are reinforcing members the elements being stressed
E04C 5/01 - Reinforcing elements of metal, e.g. with non-structural coatings
E04G 21/12 - Mounting of reinforcing insertsPrestressing
12.
HARD MATERIAL LAYERS WITH SELECTED THERMAL CONDUCTIVITY
The present invention relates to a hard material layer system with a multiple-layer structure, comprising alternating layers A and B, with A layers having the composition in atomic percentage MeApAOnANmA and B layers having the composition in atomic percentage MeBpBOnBNmB, wherein the thermal conductivity of the A layers is greater than the thermal conductivity of the B layers. b. MeA and MeB each comprise at least one metal of the group Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and AI, pA identifies the atomic percentages of MeA and pB the atomic percentages of MeB and the following is true: PA = PB, nA identifies the oxygen concentration in the A layers in atomic percentage, and nB identifies the oxygen concentration in the B layers in atomic percentage and the following is true: nA < nB, and mA identifies the nitrogen concentration in the A layers in atomic percentage and mB identifies the nitrogen concentration in the B layers in atomic percentage and the following is true: pA/(nA+mA) = pB/(nB+mB).
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
13.
Thin-film photovoltaic device and fabrication method
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/0256 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by the material
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
patents
