A chemical detection mixture includes microsensor elements adapted to detect target chemical and/or target environmental conditions. The microsensor elements can be incorporated within liquid and dry mixtures, including compounds of inks, dyes, print powders, aerosols and other suspensions. The microsensor element state is detected and then processed to identify a detected value for the target chemical. Depending on the result, a readout substance is released to indicate a presence of the target chemical.
G01N 21/77 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
A coated article includes integrated circuit detection elements incorporated on a surface or embedded in a body, which elements are adapted to detect target chemical and/or target environmental conditions. The detection elements include microsensors applied with liquid and dry mixtures, including compounds of inks, dyes, print powders, aerosols and other suspensions. The microsensor state is detected and then processed to identify a detected value for the target chemical. Depending on the result, a readout substance is released to indicate a presence of the target chemical.
G01N 21/77 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
A chemical detection system on an integrated circuit includes microsensor elements adapted to detect target chemical and/or target environmental conditions. The chemical detection system generally includes carbon nanotubes as the microsensor elements, magnetoelectronic processing components for interpreting the CNT state, non-volatile memory for storing the detection state, and a combination of readout options, including transmitting antennas and micromechanical structures for controlling an expression of a readout substance.
G01N 21/77 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
G01N 27/12 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluidInvestigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon reaction with a fluid
A process is disclosed for using microsensors elements embedded in or on articles for detecting target chemical and/or target environmental conditions of interest, including materials hazardous to human health and/or associated with illegal activity. The microsensor elements can be fabricated on a single semiconductor chip, and can be made indetectable to facilitate secure surveillance of potentially illegal activities.
Resistance elements, including Magnetic Tunnel Junction devices are configured as magnetoelectronic (ME) devices. These resistive devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.
G11C 11/18 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using Hall-effect devices
H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
H01L 43/02 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Hybrid Hall Effect Devices implemented with Spin Transfer Torque write capability are configured as magnetoelectronic (ME) devices. These devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.
H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
H03K 17/90 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of galvano-magnetic devices, e.g. Hall-effect devices
Magnetoelectronic circuits include Hybrid Hall Effect devices implemented with Spin Transfer Torque write capability. The circuits include reconfigurable processing systems, logic circuits, non-volatile switches, memory cells, etc.
H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed for use in energy constrained applications in which logic operations are carried out using a minimal number of physical operations. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc. including in clockless applications.
H03K 3/59 - Generators characterised by the type of circuit or by the means used for producing pulses by the use of galvano-magnetic devices, e.g. Hall-effect devices
H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
9.
Nonvolatile logic circuit architecture and method of operation
Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc.
H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
patents